TWI703375B - Sensing control module and sensing method - Google Patents

Abstract

A sensing control module including circuit groups and first sensing lines is provided. Each circuit group include sensing control circuits, and every sensing control circuit includes sensing capacitor and first transistor. Every sensing capacitor has a detection space, where fluid can flow therein. The sensing capacitor is connected to the gate of the first transistor. Every sensing line is connected to the first transistors of one of the circuit groups, and connected to first power through the first transistor, so as to transmit first sensing signal. A sensing method is also provided.

Description

Induction control module and induction method

The present invention relates to an induction control circuit and an induction method; in particular, it relates to an induction control circuit and an induction method that can be applied to microfluidic control or electrowetting control.

Microfluidic biochips can detect samples without additional labels (Label-free). With the electro-wetting effect, the fluid sample in the microchannel can be controlled by voltage, such as moving the position or the contact area between the fluid sample and the substrate, so as to provide more precise and automated biological sample detection.

The present invention provides a sensing control module and sensing method, which can maintain good signal contrast, thereby providing effective sensing functions.

The sensing control module of an embodiment of the present invention includes a plurality of circuit groups and a plurality of first sensing lines. Each circuit group includes a plurality of induction control circuits, and each induction control circuit includes an induction capacitor and a first transistor. Each sensing capacitor has a detection space for fluid to pass through. The sensing capacitor is connected to the gate of the first transistor. Each sensing line is connected to the first transistors in one of the circuit groups, and is connected to a first power source through the first transistors to transmit the first sensing signal.

The induction control module of an embodiment of the present invention includes a plurality of induction control circuits, a plurality of first induction lines, and a plurality of reference voltage lines. These sensing control circuits are arranged in multiple element rows. Each induction control circuit includes an induction capacitor and a first transistor. Each sensing capacitor has a detection space for fluid to pass through, and the sensing capacitor is connected to the gate of the first transistor. The first transistor of each induction control circuit is connected between one of the first induction lines and a first power source to transmit a first induction signal. The gate of the first transistor of each induction control circuit is connected to one of the reference voltage lines. In each sensing control circuit, the reference voltage line provides a reference voltage signal before the first transistor transmits the first sensing signal. When the first transistor transmits the first sensing signal, the reference voltage signal is raised from a first potential to A second potential.

The sensing method of an embodiment of the present invention includes: providing a reference voltage signal to the gate of a first transistor in an inductive control circuit, the first reference voltage signal having a first potential; and inducing a first voltage signal from the first transistor The sensing signal simultaneously raises the first potential of the second reference voltage signal to the second potential; wherein the first transistor is connected between a first power source and a first sensing line, and the gate of the first transistor is connected to An induction capacitor includes a detection space, and the detection space is suitable for the passage of fluid.

It can be seen from the above that the induction control circuit proposed by the present invention can reduce the signal influence caused by leakage current; the induction method proposed by the present invention can prevent the first induction signal from being affected by the leakage current.

The induction control module proposed by the present invention is suitable for application in detection devices such as microfluidic chips, preferably in detection devices that use changes in electric field and electro-wetting to move and control fluid samples. Please refer to FIG. 1A for a schematic diagram of the sensing control module 50 in the first embodiment of the present invention.

In the drawings, the size and thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout the specification, the same or similar reference numerals denote the same elements. It should be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements. As used herein, "connection" can refer to physical and/or electrical connection. Furthermore, "electrical connection" or "coupling" can mean that there are other elements between two elements.

1A, the sensing control module 50 of the first embodiment of the present invention is suitable for sensing or controlling a fluid in the sensing area 50S, preferably sensing or controlling a liquid drop. The droplet can contain any liquid with polarity, which can be a liquid with ions or an aqueous solution. For example, the droplet is arranged in the space between the two substrates of the sensing control module 50, and the space around the droplet can be filled with non-polar liquid, such as silicone oil, dodecane, etc. In other words, in the space formed between the two substrates, the liquid droplets can move, deform or adhere due to the electrowetting effect generated by the voltage applied between the substrates, and the remaining space can be changed by the non-polar Liquid filling. The above is only an example to illustrate the applicable fields of the induction control module 50 proposed by the present invention, and is not intended to limit the present invention.

1A, the sensing control module 50 of this embodiment includes a plurality of circuit groups 100G, each of the circuit groups 100G includes a plurality of sensing control circuits 100, and the sensing control circuits 100 of the circuit groups 100G are distributed in the sensing area 50S in. The sensing control module 50 may also include a data control circuit 51 and a scan control circuit 52. The data control circuit 51 is used to transmit data signals and the scan control circuit 52 sequentially turns on the transistors in the sensing control circuit 100 to make The data signal can be transmitted to the data control circuit 51 and change the electric field in a part of the sensing area 50S.

Preferably, the sensing control module 50 of this embodiment further includes a sensing circuit 53 and an address detection circuit 54, wherein the sensing circuit 53 can sense the first sensing line connected to one of the sensing control circuits 100. The address detection circuit 54 sequentially provides a second sensing signal to perturb the sensing capacitors in each sensing control circuit 100 one by one, so that the sensing circuit 53 can be transmitted by the first sensing line The sensing signal measures the electrical information with the sensing capacitor. The features of the induction control circuit 100 in the embodiment of the present invention will be further described below.

It should be understood that although the terms "first", "second", etc. may be used herein to describe various elements, components or parts, these elements, components or parts should not be limited by these terms. These terms are only used to distinguish one element, component or part. Therefore, the “first component”, “first component”, “first transistor”, “first capacitor” or “first signal” discussed below can also be referred to as “second component” or “second component” ", "Second Transistor", "Second Capacitor" or "Second Signal" without departing from the teaching of this article.

Please refer to the schematic diagram of the sensing control circuit 100 depicted in FIG. 1B. The sensing circuit control circuit 100 includes a sensing capacitor 102 and a first transistor 103. The sensing capacitor 102 has a detection space for fluid to pass through, and the other end is connected to a reference electrode 101. One end of the first transistor 103 is connected to a first power source v1, and the other end is connected to the first sensing line Sense1. Therefore, when the first transistor 103 is enabled, a current can be generated from the first power source v1 to form a first sensing signal .

Specifically, the gate of the first transistor 103 is connected to the sensing capacitor 102 through the circuit 110, wherein the circuit 110, the first sensing line Sense1, and the first transistor 103 are, for example, formed on the lower substrate (not shown) of the sensing control module 50 (Shown), the reference electrode 101 connected to the sensing capacitor 102 is formed on the upper substrate (not shown) of the sensing control module 50, the detection space of the sensing capacitor 102 is located between the upper substrate and the lower substrate, and the capacitance value of the sensing capacitor 102 When the fluid in the detection space changes, the signal received by the gate of the first transistor 103 will change, thereby changing the size of the channel of the first transistor 103 and the size of the first inductive signal from the first power source v1. The present invention is not limited to the above-mentioned circuit element layout positions of the substrates, and in other embodiments, electrodes formed on one side of the substrate may be used to form capacitors.

1B, the sensing control module 50 of the first embodiment of the present invention further includes a second sensing line Sense2, used to provide a second sensing signal to the circuit 110 to disturb the sensing capacitor 102, and the sensing capacitor 102 The capacitance value corresponding to the voltage level changed by the disturbance further affects the channel size of the first transistor 103, so that the first sensing signal carries information that can obtain the capacitance value of the sensing capacitor 102.

In the first embodiment of the present invention, the sensing control module 50 further includes a gate line Gate1 and a scan line Gate2. The gate line Gate1 is used to control the transmission of the gate reference voltage signal of the first transistor 103; the scan line Gate2 is used to control the transmission of the data signal from the data line Data.

The above-mentioned data line Data and scan line Gate2 are used to control the function of controlling liquid droplets in the sensing control circuit 100. They are only for example. Those skilled in the art can further provide signals to control liquid droplets by using other circuit layouts. In the following, the induction control circuit proposed by the present invention will be further described in detail.

The sensing control module 50 of the first embodiment of the present invention includes a plurality of sensing control circuits, and these sensing control circuits form a plurality of circuit groups, and the sensing control module 50 also includes a plurality of first sensing lines, each connected to one of the circuits group. Please refer to FIG. 2A for the schematic diagram of the element row column1 of the first embodiment of the present invention. In the first embodiment of the present invention, the element row column1 includes sensing control circuits 100a1, 100b1, 100a2, and 100b2, wherein the sensing control circuits 100a1 and 100a2 are from one circuit group; the sensing control circuits 100b1 and 100b2 are from another circuit group. The first transistors 103a1 and 103a2 of the sensing control circuits 100a1 and 100a2 from the same circuit group are connected to the first sensing line sense1a; the first transistors 103b1 and 103b2 of the sensing control circuits 100b1 and 100b2 from the other circuit group are connected to the first An induction line sense1b. In other words, in the element row Column1, the first transistors 103a1, 103a2, 103b1, and 103b2 of the sensing control circuits 100a1, 100a2, 100b1, and 100b2 are respectively connected to the first sensing line sense1a or the first sensing line sense1b, so that The number of sensing control circuits connected to the first sensing wires sense1a and sense1b is reduced.

The sensing capacitor 102a1 is connected to the gate of the first transistor 103a1; the sensing capacitor 102a2 is connected to the gate of the first transistor 103a2, so the first sensing signal transmitted by the first sensing line sense1a is substantially equal to the sensing capacitor 102a1 or The capacitance value of 102a2 is related. The sensing capacitor 102b1 is connected to the gate of the first transistor 103b1; the sensing capacitor 102b2 is connected to the gate of the first transistor 103b2, so the first sensing signal transmitted by the first sensing line sense2a is substantially equal to the sensing capacitor 102b1 or The capacitance value of 102b2 is related.

In this embodiment, by reducing the number of sensing control circuits connected to each of the first sensing wires sense1a, sense1b, the influence of the leakage current on the first sensing signal can be reduced. For example, every time one of the first sensing lines (take sense1a as an example) receives the first sensing signal of one of the sensing control circuits 100a1, the first sensing line sense1a will only receive the first transistor 103a2 The leakage current does not receive the leakage current of the first transistors 103b1 and 103b2, and vice versa. Therefore, by connecting the sensing control circuits of different circuit groups to different first sensing lines to transmit the first sensing signal, the sensing control module of the present implementation force will not be affected by the leakage current of the first transistor. A detection capability for sensing signals. In other words, when a blood sample droplet is moving in the silicon oil in the sensing area 50S of the sensing control module 50, the size of the first sensing signal and the sensing space when there is a sample drop in the sensing space of the sensing capacitor 102a1 of the sensing control circuit 100a1 The only difference in the size of the first sensing signal of silicon oil is large enough to show sufficient contrast to determine whether the sample droplet is located in the detection space, thereby improving the detection sensitivity of the first sensing signal.

Specifically, in this embodiment, the number of sensing control circuits 100 connected to each of the first sensing wires sense1a or sense1b can be adjusted according to the characteristics of the transistor, and is designed to minimize the influence caused by leakage current. The number of circuits 100 is optimized, so that the detection sensitivity of the first sensing signal can be effectively maintained.

On the other hand, in this embodiment, the sensing control circuits 100a1, 100a2, 100b1, and 100b2 of these circuit groups are alternately arranged in the element row column1. In other words, the two sides of the sensing control circuit 100b1 are adjacent to the sensing control circuits 100a1 and 100a2 from another circuit group; the two sides of the sensing control circuit 100a2 are adjacent to the sensing control circuits 100b1 and 100b2 from the other circuit group. . The first sensing lines sense1a, sense1b can receive the first sensing signal in turn to sequentially detect the sensing control circuits 100a1, 100a2, 100b1, 100b2 in the element row column1.

However, the present invention is not limited to the alternate arrangement described above. Please refer to FIG. 2B for a schematic diagram of element rows in another embodiment of the present invention. In this embodiment, the sensing area of the sensing control module 60 is formed by a plurality of sub-regions 60a, 60b, and each circuit group is set corresponding to one of the sub-regions. In other words, the sub-region 60a of the sensing area is formed by a circuit group formed by sensing control circuits 100a1, 100a2 (take two as an example, the present invention is not limited to this number); the sub-region 60b of the sensing area is formed by sensing The control circuits 100b1 and 100b2 (two are taken as an example here, and the present invention is not limited to this number). These sub-regions 60a, 60b are arranged in two parts, for example, in the element row column, so as to reduce the number of sensing control circuits connected to a first sensing line. On the other hand, in this embodiment, the first sensing line sense1a and the second sensing line sense1b may both extend in the same direction to connect to a sensing circuit, or each may extend in opposite directions and connect to the center The sensing circuit or multiple sensing circuits located on both sides.

In detail, please refer back to the sensing control module 50 of the first embodiment depicted in FIG. 2A. In the circuit 110 of the sensing control circuits 100a1, 100a2, 100b1, and 100b2 of this embodiment, each further includes first capacitors 111a1, 111a2, 111b1, and 111b2. In the sensing control circuit 100a1, the first capacitor 111a1 is connected between the sensing capacitor 102a1 and the gate of the first transistor 103a1. The first capacitors 111a2, 111b1, and 111b2 are respectively connected between the sensing control circuits 100a2, 100b1, and 100b2 at the same relative position, which will not be repeated here.

The sensing control circuits 100a1, 100a2, 100b1, and 100b2 of this embodiment each further include second capacitors 112a1, 112a2, 112b1, 112b2. In the sensing control circuit 100a1, the second capacitor 112a1 is connected between the sensing capacitor 102a1 and the second sensing line sense2a1, and the first capacitor 111a1 and the second capacitor 112a1 are connected in parallel to the sensing capacitor 102a1. The second sensing line sense2a1 is adapted to provide a second sensing signal to the second capacitor 112a1, so as to disturb the voltage level in the sensing capacitor 102a1 by the potential difference. The second capacitors 112a2, 112b1, and 112b2 are respectively connected to the relative positions of the sensing control circuits 100a2, 100b1, and 100b2, and are respectively connected to the second sensing lines sense2b1, sense2a2, sense2b2, which will not be repeated here.

The sensing control circuits 100a1, 100b1, 100a2, and 100b2 of this embodiment each further include second transistors 113a1, 113b1, 113a2, and 113b2. In the sensing control circuit 100a1, the second transistor 113a1 is connected between the reference voltage line v2a1 and the gate of the first transistor 103a1, and the gate line Gate1a1 enables the second transistor 113a1 to transmit a reference voltage signal to Between the first transistor 103a1 and the first capacitor 111a1.

In this embodiment, the reference voltage signal is substantially synchronized with the second sensing signal or provided before the second sensing signal, so as to adjust the voltage level of the gate of the first transistor 103a1. When the second sensing signal is provided from the second sensing line sense2a1, the sensing capacitor 102a1, the first capacitor 111a1, and the second capacitor 112a1 will be disturbed and make the voltage level of the gate of the first transistor 103a1 further from the reference voltage level. The increase affects the channel size of the first transistor 103a1. The corresponding first sensing signal can be obtained from the first sensing line sense1a to obtain the capacitance value of the sensing capacitor 102a1. The second transistors 113b1, 113a2, 113b2 are respectively connected to the relative positions of the sensing control circuits 100b1, 100a2, and 100b2, and are respectively connected to the reference voltage lines v2b1, v2a2, v2b2, and their respective gates are respectively connected to the gate line Gateb1 , Gatea2, Gateb2. The operation mode of these second transistors 113b1, 113a2, 113b2 is substantially similar to the above-mentioned second transistor 113a1, and will not be repeated here.

In the element row column1 of this embodiment, the first sensing signal can be transmitted on the first sensing lines sense1a and sense1b at the same time, and the first sensing lines sense1a and sense1b can also transmit the first sensing signal in turn. Specifically, when the first sensing signal is received from the first sensing line sense1a, in the device row column1, for example, the second sensing signal is sequentially transmitted to the second sensing lines sense2a1, sense2a2, and the gate signal is sequentially transmitted to The gate lines Gate1a1 and Gate1a2 sequentially enable the second transistors 113a1 and 113a2 to scan the sensing capacitors 102a1 and 102a2.

While these gate lines Gate1a1 and Gate1a2 transmit gate signals, this embodiment can also simultaneously transmit second sensing signals via second sensing lines senseb1 and senseb2, and transmit gate signals via gate lines Gateb1 and Gateb2, so that A sensing line sense1a and a first sensing line sense1b can simultaneously receive the first sensing signal.

The present invention is not limited to the above-mentioned first sensing signal receiving method. In other embodiments, the first sensing signal may be received from the first sensing lines sense1a and sense1b in turn. For example, the second sensing signal can be sequentially transmitted by the second sensing lines sense2a1, sense2b1, sense2a2, sense2b2, and the gate signal can be sequentially transmitted by the gate lines Gate1a1, Gate1b1, Gate1a2, Gate1b2, and then each by the first The sensing lines sense1a, sense1b, sense1a, and sense1b receive the first sensing signal in sequence.

On the other hand, in the element row column1 of this embodiment, the first sensing lines sense1a and sense1b can scan these sensing control circuits in different directions. For example, corresponding to the first sensing line sense1a, the second sensing signal can be sequentially transmitted to the second sensing lines sense2a1, sense2a2; the gate signal can be sequentially transmitted to the gate lines Gate1a1, Gate1a2, so that the sensing control circuit 100a1, 100a2 The first sensing signal can be transmitted to the first sensing line sense1a in sequence. In contrast, corresponding to the second sensing line sense2a, the second sensing signal can be sequentially transmitted to the second sensing line sense2b2, sense2b1; the gate signal can be sequentially transmitted to the gate line Gate1b2, Gate1b1, so that the sensing control circuit 100b2, 100b1 can be The first sensing signal is sequentially transmitted to the first sensing line sense1b.

The present invention is not limited to the above-mentioned signal transmission sequence. In other embodiments, the first sensing lines sense1a and sense1b can also scan their connected sensing control circuits in the same direction.

On the other hand, the induction control circuits 100a1, 100b1, 100a2, and 100b2 of this embodiment also each include electronic components that can control liquid droplets. Taking the sensing control circuit 100a1 as an example, it also includes a third transistor 114a1, which is connected between the sensing capacitor 102a1 and the data line Data, and is enabled by the signal transmitted by the scan line Gate2. Specifically, the signal transmitted by the data line Data is essentially used to change the potential difference in the sensing capacitor 102a1, that is, the potential difference between the data signal and the reference electrode 101, so that the droplets in the inspection space of the sensing capacitor 102a1 can be The electrowetting effect moves or flattens. The first sensing signal transmitted by the first sensing lines sense1a and sense1b in this embodiment is used to confirm the position of the droplet, and can provide a highly sensitive detection effect.

The sensing control circuits 100b1, 100a2, and 100b2 of this embodiment each include third transistors 114b1, 114a2, and 114b2, and they are connected to similar relative positions, which will not be repeated here.

Hereinafter, an experimental example is used to further illustrate the induction control module of the above-mentioned first embodiment. In an experimental example, a first sensing wire is connected to 50 first transistors in the sensing control circuit 100 of the above-mentioned first embodiment; in a comparative example, a sensing wire is connected to 100 transistors, and The gates of these transistors are each connected to a sensing capacitor, and the sensing line scans the 100 transistors in sequence to learn the capacitance value of each sensing capacitor. After simulation, the first induction line in the experimental example measured 0.28 microamperes when there were droplets; when there were no droplets, it measured 1.04 microamperes, and the ratio of the two values was as high as 3.76. In the comparative example, the sensing line measures 0.42 microamperes when there are droplets; when there are no droplets, it measures 1.18 microamperes, and the ratio of the two values is only 2.84. It can be seen from the above that, when the 100 first transistors are divided into a circuit group formed by 50 first transistors by the method of erecting the first sensing wires in the first embodiment, the signal contrast can be greatly improved. value.

FIG. 3A is a schematic diagram of an induction control circuit in the second embodiment of the present invention; FIG. 3B is a schematic diagram of an induction control signal in the second embodiment of the present invention. The induction control circuit proposed by the present invention is not limited to the above-mentioned implementation of reducing the influence of leakage current by using a plurality of first induction lines. The induction method proposed by the present invention will be described together with the induction driving module below.

3A, the sensing control module 70 of the second embodiment of the present invention includes sensing control circuits 200a and 200b, and also includes a data line Data, a first sensing line Sense, a second sensing line Sense pulse (n-1), a first Two sensing lines Sense pulse(n), gate line RST(n-1), gate line RST(n), scan line Gate(n), of which data line Data and scan line Gate(n) can be used in the sensing control circuit 200b provides the function of controlling droplets.

In this embodiment, the sensing control circuit 200a includes a sensing capacitor 210a, a first transistor 220a, and a second transistor 230a. The first transistor 220a is connected to the first sensing line Sense, and the first sensing line Sense is connected to the first power source Vdd through the first transistor 220a. The sensing capacitor 210a is connected to the gate of the first transistor 220a, preferably connected to the gate of the first transistor 220a through a capacitor. One end of the second transistor 230a may be connected to the reference voltage line VRST(n-1), and the other end may be connected to the gate of the first transistor 220a. The signal transmitted by the gate line RST(n-1) can enable the second transistor 230a, so that the reference voltage line VRST(n-1) can provide a reference voltage signal to the gate of the first transistor 220a, Further, when the second sensing line Sense pulse (n-1) transmits the second sensing signal and disturbs the sensing capacitor 210a, the first transistor 220a can correspondingly open the channel to transfer the first sensing signal from the first power supply Vdd to the first sensing Line Sense.

Similarly, the sensing control circuit 200b includes a sensing capacitor 210b, a first transistor 220b, and a second transistor 230b. The first transistor 220b is connected to the first sensing line Sense, and the first sensing line Sense is connected to the first power source Vdd through the first transistor 220b. The sensing capacitor 210b is connected to the gate of the first transistor 220b, preferably connected to the gate of the first transistor 220b through a capacitor. One end of the second transistor 230b may be connected to the reference voltage line VRST(n), and the other end may be connected to the gate of the first transistor 220b. The signal transmitted by the gate line RST(n) can enable the second transistor 230b, so that the reference voltage line VRST(n) can provide a reference voltage signal to the gate of the first transistor 220b, thereby enabling the second transistor When the sensing line Sense pulse(n) transmits the second sensing signal and disturbs the sensing capacitor 210b, the first transistor 220b can correspondingly turn on the channel to transmit the first sensing signal from the first power source Vdd to the first sensing line Sense.

Please also refer to FIG. 3A. In the sensing control circuit 200b of this embodiment, the gate of the first transistor 220b (take the contact Vsense(n) as an example) will first raise the voltage level through the reference voltage signal, and then the first transistor 220b A sensing line Sense receives the first sensing signal, and while receiving the first sensing signal, it will further increase the reference voltage of the first transistor 220b. In detail, please refer to FIG. 3B. At time t1, the reference voltage line VRST(n) is ready to raise the voltage level, the gate line RST(n) still maintains the high voltage level, and the reference voltage of Vsense(n) is transmitted through The second transistor 230b is raised to the first voltage v1. At time t2, the voltage level of the gate line RST(n) drops, turning off the second transistor 230b, and making the contact point Vsense(n) floating. At time t3, the second sensing line Sense pulse(n) transmits the second sensing signal, so that the reference voltage of the contact point Vsense(n) is further increased to the second voltage v2 and the first transistor 220b is turned on. At time t4, the voltage level of the second sensing line Sense pulse(n) drops, turning off the first transistor 220b. Between time t3 and t4, the first sensing line Sense receives the first sensing signal. At time t5, the voltage level of the reference voltage line VRST(n) drops, and the voltage level of the gate line RST(n) rises, making the contact Vsense(n) return to the reference store. As described above, by adjusting the reference voltage of the contact point Vsense(n) in stages, the leakage current of the first transistor of the induction control circuit of this embodiment can be reduced.

On the other hand, the scan line Gate(n) is at a low voltage level during the above process, so the above-mentioned elements are mostly floating with each other, and the voltage level can be affected by the potential difference of the capacitor.

On the other hand, the reference voltage signal of the reference voltage line VRST(n) and the reference voltage signal of the reference voltage line VRST(n-1) substantially overlap with each other; the gate signal of the gate line RST(n) and the gate The gate signals of the pole line RST(n-1) substantially overlap with each other. In other words, the reference voltage line VRST(n) can be boosted to the first voltage by the gate line RST(n) and the reference voltage line VRST(n) in advance while other sensing control circuits are still transmitting the first sensing signal. Level v1 to reduce the leakage current of other induction control circuits can be reduced.

The second experimental example and the second comparative example are described below. The second experimental example is similar to the above-mentioned second embodiment. The reference voltage of the gate of the first transistor is raised to a voltage level in advance; the reference voltage of the second comparative example maintains a single voltage level. After simulation, the first sensing signal in the second experimental example measured 0.9 microampere when there was no target droplet; when there was a droplet, it measured 0.14 microampere, and the ratio of the two values was as high as 6.39. In the comparative example, the sensing signal measures 1.18 microamperes when there is no target droplet, and 0.42 microamperes when there is a droplet. The ratio of the two values is only 2.84. From the foregoing, it can be seen that the sensing control module using the sensing method in the second embodiment of the present invention can greatly improve the signal contrast, thereby improving the sensitivity of sensing.

To sum up, the induction control module and the induction method proposed by the present invention can reduce the influence caused by leakage current, thereby maintaining the induction sensitivity.

The terminology used here is only for the purpose of describing specific embodiments and is not limiting. As used herein, unless the content clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include the plural forms, including "at least one." "Or" means "and/or". As used herein, the term "and/or" includes any and all combinations of one or more related listed items. It should also be understood that when used in this specification, the term "including" designates the features, regions, wholes, steps, operations, presence of elements and/or components, but does not exclude one or more other features, whole regions, The existence or addition of steps, operations, elements, components, and/or combinations thereof.

It should be noted that relative terms such as "down" or "bottom" and "up" or "top" can be used herein to describe the relationship between one element and another element, as shown in the figure. It should be understood that relative terms are intended to include different orientations of the device other than those shown in the figures. For example, if the device in one figure is turned over, elements described as being on the "lower" side of other elements will be oriented on the "upper" side of the other elements. Therefore, the exemplary term "lower" may include an orientation of "lower" and "upper", depending on the specific orientation of the drawing. Similarly, if the device in one figure is turned over, elements described as "below" other elements will be oriented "above" the other elements. Thus, the exemplary term "below" can include an orientation of above and below.

As used herein, "approximately", "approximately", or "substantially" includes the stated value and the average value within the acceptable deviation range of the specific value determined by a person of ordinary skill in the art, taking into account the measurement and A certain amount of measurement-related error (ie, the limitation of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the "about", "approximate" or "substantially" used herein can select a more acceptable deviation range or standard deviation based on optical properties, etching properties or other properties, and not one standard deviation can be applied to all properties .

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having meanings consistent with their meanings in the context of related technologies and the present invention, and will not be interpreted as idealized or excessive The formal meaning, unless explicitly defined as such in this article.

The exemplary embodiments are described herein with reference to cross-sectional views that are schematic diagrams of idealized embodiments. Therefore, a change in the shape of the diagram as a result of, for example, manufacturing technology and/or tolerance can be expected. Therefore, the embodiments described herein should not be interpreted as being limited to the specific shape of the area as shown herein, but include, for example, shape deviations caused by manufacturing. For example, areas shown or described as flat may generally have rough and/or non-linear characteristics. In addition, the acute angles shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to show the precise shape of the regions, and are not intended to limit the scope of the claims.

column1, column2 element row Data data lines Gate(n), Gate2 scan lines Gate1a1, Gate1b1, Gate1a2, Gate1b2, RST(n-1), RST(n) Gate lines Sense, sense1a, sense1b First sense lines sense2a1, sense2b1 , sense2a2, sense2b2, Sense pulse(n-1), sense pulse(n) Second sense line v1, Vdd First power supply v2a1, v2a2, v2b1, v2b2 Reference voltage line VRST(n-1), VRST(n) Reference Voltage line Vsense(n) Contact 50, 60, 70 Sensing control module 50S Sensing area 51 Data control circuit 52 Scan control circuit 53 Sensing circuit 54 Address detection circuit 100, 100a1, 100a2, 100b1, 100b2, 200a, 200b Inductive control circuit 100G Circuit group 101 Reference electrode 102, 102a1, 102a2, 102b1, 102b2, 210a, 210b Inductive capacitor 103, 103a1, 103a2, 103b1, 103b2, 220a, 220b First transistor 110 Circuit 111a1, 111a2, 111b1, 111b2 First capacitor 112a1, 112a2, 112b1, 112b2 Second capacitor 113a1, 113a2, 113b1, 113b2, 230a, 230b Second transistor 114a1, 114a2, 114b1, 114b2 Third transistor

Figure 1A is a schematic diagram of the induction control module in the first embodiment of the present invention; Figure 1B is a schematic diagram of the induction control circuit in the first embodiment of the present invention; Figure 2A is a schematic diagram of the component row in the first embodiment of the present invention; Figure 2B It is a schematic diagram of a component row in another embodiment of the present invention; FIG. 3A is a schematic diagram of a sensing control module in a second embodiment of the present invention; FIG. 3B is a schematic diagram of sensing signals in a second embodiment of the present invention.

column1 element row Data data line Gate2 scan line Gate1a1, Gate1b1, Gate1a2, Gate1b2 gate line sense1a, sense1b first sense line sense2a1, sense2b1, sense2a2, sense2b2 second sense line v1 first power supply v2a1, v2a2, v2b1, v2b2 reference voltage Line 50 Induction control module 100a1, 100a2, 100b1, 100b2 Induction control circuit 101 Reference electrode 102a1, 102a2, 102b1, 102b2 Sensing capacitor 103a1, 103a2, 103b1, 103b2 First transistor 110 Circuit 111a1, 111a2, 111b1, 111b2 First Capacitor 112a1, 112a2, 112b1, 112b2 Second capacitor 113a1, 113a2, 113b1, 113b2 Second transistor 114a1, 114a2, 114b1, 114b2 Third transistor

Claims (10)

An induction control module includes: a plurality of circuit groups, each of the circuit groups includes a plurality of induction control circuits, each of the induction control circuits includes: an induction capacitor, and each of the induction capacitors has a detection space for fluid to pass through And a first transistor, the sensing capacitor is connected to the gate of the first transistor; and a plurality of first sensing lines, each of the sensing lines is connected to one of the first transistors in the circuit group, And connected to a first power source through the first transistors to transmit the first inductive signal; wherein the inductive control circuits of the circuit groups form a plurality of element rows extending along the first direction; in one of the In the element row, both sides of each induction control circuit of one of the circuit groups are adjacent to two of the induction control circuits of the other circuit group. As for the sensing control module described in claim 1, wherein the first sensing wires alternately or simultaneously transmit the first sensing signal to the circuit group connected to each. According to the sensing control module described in claim 1, wherein each of the first sensing wires is connected to two of the circuit groups, and the first sensing wires provide the first sensing in turn in reverse or forward order The signal is given to the two circuit groups. The sensing control module described in item 1 of the scope of patent application is suitable for sensing fluid in a sensing area, and the sensing area includes a plurality of sub-areas connected to each other, and each circuit group is set corresponding to one of the sub-areas , And the detection areas of the circuit group form the sub-area. According to the sensing control module described in item 1 of the scope of patent application, each of the sensing control circuits further includes: a first sensing electrode disposed on one side of the detection space; A second sensing electrode is arranged on one side of the detection space, and the first sensing electrode, the detection space, and the second sensing electrode form the sensing capacitor; a first capacitor through which the gate of the first transistor passes The first capacitor is connected to the second sensing electrode; a second capacitor is connected to the second sensing electrode in parallel with the first capacitor; and a second transistor, one end of which is connected to the gate of the first transistor and the The sensing control module further includes: a plurality of second sensing lines, the second capacitors of the sensing control circuits in the circuit groups are connected to one of the second sensing lines, and The second capacitor is adapted to obtain a second sensing signal from the second sensing line; a plurality of gate lines, the gates of the second transistors of the sensing control circuits in the circuit groups are connected to the gates And a plurality of reference voltage lines, the second transistor of the induction control circuits in the circuit groups is connected to one of the reference voltage lines; in each of the induction control circuits, The gate line provides a signal to enable the second transistor, so that the second transistor transmits a reference voltage signal from the reference voltage line to between the first capacitor and the gate of the first transistor. A transistor and the second capacitor respectively simultaneously receive the first sensing signal and the second sensing signal. According to the inductive control module described in item 1 of the scope of patent application, each of the inductive control circuits further includes: a third transistor connected in parallel with the gate of the first transistor to the inductive capacitor; and the inductive control The module further includes: a plurality of data lines, each of the third transistors in the sensing control circuit is connected to one of the data lines to And the sensing capacitor; and a plurality of scan lines, each of the gate of the third transistor in the sensing control circuit is connected to one of the scan lines; wherein the scan lines are adapted to each transmit a scan signal to the The third transistors are enabled in the circuit groups, so that each of the third transistors can transmit a control signal to the sensing capacitor, and the sensing capacitor is suitable for controlling the fluid in the detection space by the control signal. An induction control module includes: a plurality of induction control circuits arranged in a plurality of element rows, each of the induction control circuits includes: an induction capacitor, each of which has a detection space for fluid to pass through; and a second A transistor, the sensing capacitor is connected to the gate of the first transistor; a plurality of first sensing lines, the first transistor of each sensing control circuit is connected to one of the first sensing line and a first sensing line Between the power supplies to transmit a first sensing signal; and a plurality of reference voltage lines, the gate of the first transistor of each sensing control circuit is connected to one of the reference voltage lines; wherein each sensing control circuit In the circuit, the reference voltage line provides a reference voltage signal before the first transistor transmits the first sensing signal, and when the first transistor transmits the first sensing signal, the reference voltage signal rises from a first potential To a second potential. As described in item 9 of the scope of patent application, the sensing control module further includes: a plurality of second sensing wires; and a plurality of gate wires; each of the sensing control circuits further includes: a first sensing electrode; A second sensing electrode forms the sensing capacitor with the first sensing electrode and the detection space; a second transistor with one end connected between the gate of the first transistor and the sensing capacitor; a first capacitor, Connected between the second sensing electrode and the gate of the first transistor; and a second capacitor, connected to the second sensing electrode in parallel with the first capacitor, and one of the second sensing lines passes through the second The capacitor is connected to the second sensing electrode; wherein the gate of the second transistor is connected to one of the gate lines, and in each of the sensing control circuits, the gate line provides a signal to enable the second transistor, So that the second transistor transmits the reference voltage signal from the reference voltage line to the first capacitor and the gate of the first transistor, and the first transistor and the second capacitor each receive the first transistor simultaneously A sensing signal and the second sensing signal. For the induction control module described in claim 9, wherein the induction control circuits are grouped to form a plurality of circuit groups, and each of the first induction wires is connected to the induction control circuits in one of the circuit groups. An induction method includes: providing a reference voltage signal to the gate of a first transistor in an induction control circuit, the first reference voltage signal having a first potential; and inducing a first induction signal from the first transistor , While raising the first potential of the second reference voltage signal to a second potential; wherein the first transistor is connected between a first power source and a first sensing line, and the first transistor The gate is connected to an inductive capacitor, the inductive capacitor includes a detection space, the detection space is suitable for the passage of fluid.

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