TWI701585B - Ultrasonic pixel circuit and related display device - Google Patents
Ultrasonic pixel circuit and related display device Download PDFInfo
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Abstract
Description
本揭示文件有關一種顯示裝置,尤指顯示裝置中的一種超音波畫素電路。 This disclosure relates to a display device, especially an ultrasonic pixel circuit in the display device.
指紋辨識能加強行動裝置的安全性,與指紋辨識相關的解決方案包含了電容式感測技術、超音波式感測技術、以及光學式感測技術,其中電容式感測技術在以往的消費市場中受到廣泛應用。然而,當行動裝置位於水面下或配備有保護貼時,電容式感測技術的靈敏度會受到影響,並且電容式感測技術較難以設置在螢幕下方,因而不利於應用在全面屏的行動裝置。相較之下,超音波式感測技術能克服上述的多種問題,因而有望成為未來應用於行動裝置中的主流技術。 Fingerprint recognition can enhance the security of mobile devices. Solutions related to fingerprint recognition include capacitive sensing technology, ultrasonic sensing technology, and optical sensing technology. Among them, capacitive sensing technology is used in the consumer market in the past. It is widely used. However, when the mobile device is under water or equipped with a protective sticker, the sensitivity of the capacitive sensing technology will be affected, and the capacitive sensing technology is more difficult to install under the screen, which is not conducive to the application of mobile devices with full screens. In contrast, ultrasonic sensing technology can overcome the above-mentioned various problems, and is therefore expected to become the mainstream technology used in mobile devices in the future.
本揭示文件提供一種顯示裝置,其包含顯示模組、控制系統、以及超音波感測陣列。超音波感測陣列耦接於控制系統,並設置於顯示模組之一側,且包含多個超 音波傳感器和多個超音波畫素電路。多個超音波畫素電路的每一者包含峰值檢測元件、輸出電路、以及重置電路。峰值檢測元件耦接於第一節點和第二節點之間,並透過第二節點耦接於多個超音波傳感器中一對應的超音波傳感器。輸出電路耦接於第一節點,用於依據第一節點的電壓提供感測電流,且用於選擇性地將感測電流輸出至控制系統。重置電路耦接於第一節點和第二節點。當重置電路設置第一節點的電壓時,重置電路也設置第二節點的電壓。 The present disclosure provides a display device, which includes a display module, a control system, and an ultrasonic sensing array. The ultrasonic sensor array is coupled to the control system and is arranged on one side of the display module, and includes a plurality of ultrasonic sensors. Sonic sensor and multiple ultrasonic pixel circuits. Each of the plurality of ultrasonic pixel circuits includes a peak detection element, an output circuit, and a reset circuit. The peak detection element is coupled between the first node and the second node, and is coupled to a corresponding ultrasonic sensor among the plurality of ultrasonic sensors through the second node. The output circuit is coupled to the first node for providing a sensing current according to the voltage of the first node, and for selectively outputting the sensing current to the control system. The reset circuit is coupled to the first node and the second node. When the reset circuit sets the voltage of the first node, the reset circuit also sets the voltage of the second node.
本揭示文件提供一種超音波畫素電路,其包含峰值檢測元件、輸出電路、以及重置電路。峰值檢測元件耦接於第一節點和第二節點之間,並透過第二節點耦接於超音波傳感器。輸出電路耦接於第一節點,用於依據第一節點的電壓提供感測電流,且用於選擇性地將感測電流輸出至控制系統。重置電路耦接於第一節點和第二節點。當重置電路設置第一節點的電壓時,重置電路也設置第二節點的電壓。 This disclosure provides an ultrasonic pixel circuit, which includes a peak detection element, an output circuit, and a reset circuit. The peak detection element is coupled between the first node and the second node, and is coupled to the ultrasonic sensor through the second node. The output circuit is coupled to the first node for providing a sensing current according to the voltage of the first node, and for selectively outputting the sensing current to the control system. The reset circuit is coupled to the first node and the second node. When the reset circuit sets the voltage of the first node, the reset circuit also sets the voltage of the second node.
上述的顯示裝置和超音波畫素電路具有精簡的電路架構。 The above-mentioned display device and ultrasonic pixel circuit have a simplified circuit structure.
100、200‧‧‧顯示裝置 100, 200‧‧‧Display device
101‧‧‧物體 101‧‧‧Object
103‧‧‧超音波 103‧‧‧Ultrasonic
110‧‧‧保護面板 110‧‧‧Protection panel
120‧‧‧OLED顯示模組 120‧‧‧OLED display module
122‧‧‧OLED材料層 122‧‧‧OLED material layer
124‧‧‧TFT電路層 124‧‧‧TFT circuit layer
126‧‧‧基板 126‧‧‧Substrate
130‧‧‧超音波感測模組 130‧‧‧Ultrasonic Sensor Module
132‧‧‧TFT電路層 132‧‧‧TFT circuit layer
134‧‧‧基板 134‧‧‧Substrate
W1‧‧‧寬度 W1‧‧‧Width
W2‧‧‧寬度 W2‧‧‧Width
310‧‧‧超音波感測陣列 310‧‧‧Ultrasonic sensor array
312‧‧‧超音波畫素電路 312‧‧‧Ultrasonic pixel circuit
320‧‧‧控制系統 320‧‧‧Control System
322‧‧‧移位暫存器 322‧‧‧Shift register
324‧‧‧電流檢測電路 324‧‧‧Current detection circuit
326‧‧‧類比數位轉換電路 326‧‧‧Analog-to-digital conversion circuit
Swo‧‧‧輸出開關 Swo‧‧‧Output switch
PM‧‧‧超音波傳感器 PM‧‧‧Ultrasonic sensor
DI‧‧‧峰值檢測元件 DI‧‧‧Peak detection element
400、700、800、900、1000‧‧‧超音波畫素電路 400, 700, 800, 900, 1000‧‧‧Ultrasonic pixel circuit
410‧‧‧重置電路 410‧‧‧Reset circuit
420‧‧‧輸出電路 420‧‧‧Output circuit
T1‧‧‧第一開關 T1‧‧‧First switch
T2‧‧‧第二開關 T2‧‧‧Second switch
Tr‧‧‧驅動電晶體 Tr‧‧‧Drive Transistor
To‧‧‧輸出開關 To‧‧‧Output switch
Cst‧‧‧儲存電容 Cst‧‧‧Storage capacitor
Sint‧‧‧重置控制訊號 Sint‧‧‧Reset control signal
Sread‧‧‧輸出控制訊號 Sread‧‧‧Output control signal
Ise‧‧‧感測電流 Ise‧‧‧Sensing current
Lse‧‧‧感測資料線 Lse‧‧‧Sensing data line
N1‧‧‧第一節點 N1‧‧‧First node
N2‧‧‧第二節點 N2‧‧‧Second node
Vint1‧‧‧第一參考電壓 Vint1‧‧‧First reference voltage
Vbias‧‧‧驅動電壓 Vbias‧‧‧Drive voltage
VDD‧‧‧系統電壓 VDD‧‧‧System voltage
P1‧‧‧重置階段 P1‧‧‧Reset phase
P2‧‧‧感測階段 P2‧‧‧Sensing stage
P3‧‧‧輸出階段 P3‧‧‧Output stage
Vp‧‧‧預設準位 Vp‧‧‧Preset level
第1圖為根據本揭示文件一實施例的顯示裝置簡化後的功能方塊圖。 FIG. 1 is a simplified functional block diagram of a display device according to an embodiment of the present disclosure.
第2圖為依據本揭示文件另一實施例的顯示裝置簡化 後的功能方塊圖。 Figure 2 is a simplified display device according to another embodiment of the present disclosure The following functional block diagram.
第3圖為依據本揭示文件一實施例的超音波感測陣列與相關的控制系統簡化後的功能方塊圖。 FIG. 3 is a simplified functional block diagram of the ultrasonic sensor array and related control system according to an embodiment of the present disclosure.
第4圖為依據本揭示文件一實施例的超音波畫素電路的功能方塊圖。 FIG. 4 is a functional block diagram of an ultrasonic pixel circuit according to an embodiment of the present disclosure.
第5圖為第4圖的超音波畫素電路的多個控制訊號與節點電壓的波形示意圖。 FIG. 5 is a schematic diagram of waveforms of multiple control signals and node voltages of the ultrasonic pixel circuit in FIG. 4. FIG.
第6A至6C圖為第4圖的超音波畫素電路在不同運作階段中的等效電路操作示意圖。 FIGS. 6A to 6C are schematic diagrams of equivalent circuit operations of the ultrasonic pixel circuit of FIG. 4 in different operating stages.
第7圖為依據本揭示文件另一實施例的超音波畫素電路的功能方塊圖。 FIG. 7 is a functional block diagram of an ultrasonic pixel circuit according to another embodiment of this disclosure.
第8圖為依據本揭示文件又一實施例的超音波畫素電路的功能方塊圖。 FIG. 8 is a functional block diagram of an ultrasonic pixel circuit according to another embodiment of the present disclosure.
第9圖為依據本揭示文件又一實施例的超音波畫素電路的功能方塊圖。 FIG. 9 is a functional block diagram of an ultrasonic pixel circuit according to another embodiment of the present disclosure.
第10圖為依據本揭示文件又一實施例的超音波畫素電路的功能方塊圖。 FIG. 10 is a functional block diagram of an ultrasonic pixel circuit according to another embodiment of the present disclosure.
第11圖為第4圖的超音波畫素電路在一實施例中的模擬示意圖。 FIG. 11 is a simulation diagram of the ultrasonic pixel circuit of FIG. 4 in an embodiment.
第12圖為第4圖的超音波畫素電路在另一實施例中的模擬示意圖。 Fig. 12 is a schematic diagram of the simulation of the ultrasonic pixel circuit of Fig. 4 in another embodiment.
以下將配合相關圖式來說明本揭示文件的實施例。在圖式中,相同的標號表示相同或類似的元件或方法流程。 The embodiments of the present disclosure will be described below in conjunction with related drawings. In the drawings, the same reference numerals indicate the same or similar elements or method flows.
第1圖為根據本揭示文件一實施例的顯示裝置100簡化後的功能方塊圖。顯示裝置100包含保護面板110、有機發光二極體(Organic Light-Emitting Diode,OLED)顯示模組120、以及超音波感測模組130,其中OLED顯示模組120夾設於保護面板(Cover Lens)110和超音波感測模組130之間。為使圖面簡潔而易於說明,顯示裝置100中的其他元件與連接關係並未繪示於第1圖中。
FIG. 1 is a simplified functional block diagram of the
OLED顯示模組120包含OLED材料層122、薄膜電晶體(Thin Film-Transistor,TFT)電路層124、以及基板126。TFT電路層124包含多個顯示畫素電路(未繪示於第1圖),其中顯示畫素電路用於點亮OLED材料層122中的OLED顆粒。
The
在另一實施例中,顯示裝置100的OLED顯示模組120被微發光二極體(Micro LED)顯示模組所取代。在又一實施例中,顯示裝置100的OLED顯示模組120被LCD顯示模組所取代,且LCD顯示模組包含偏光片層、濾光片層、液晶層、TFT電路層、以及背光模組等等。
In another embodiment, the
超音波感測模組130包含TFT電路層132和基板134,TFT電路層132包含由多個超音波畫素電路排列成的超音波感測陣列(未繪示於第1圖)。超音波感測模組用於產生超音波103,且用於感測物體101(例如,使用者的手指)所反射的超音波103。在某一實施例中,當物體101位於保護面板110上方且未接觸於保護面板110時,超音波感測模組130會對物體101進行手勢(gesture)感測。在另一實施例中,當物體101接觸於保護面板110時,超音波感測模組130會對物體101進行指紋感測,或是進行觸控操作感測。在又一實施例中,超音波感測模組130可以同時對物體101進行手勢感測、指紋感測、及/或觸控操作感測。
The
第2圖為依據本揭示文件一實施例的顯示裝置200簡化後的功能方塊圖。顯示裝置200相似於第1圖的顯示裝置100,差異在於顯示裝置200的超音波感測模組130的寬度W1,小於OLED顯示模組120的寬度W2。因此,相較於顯示裝置100,顯示裝置200具有額外的內部空間,得以增加硬體架構設計上的彈性。
FIG. 2 is a simplified functional block diagram of the
第3圖為依據本揭示文件一實施例的超音波感測陣列310與相關的控制系統320簡化後的功能方塊圖。超音波感測陣列310包含多個超音波畫素電路312和多個超音波傳感器PM。超音波畫素電路312包含峰值檢測元件DI和輸出開關SWo。當超音波傳感器PM接收到反射的超音波時,峰值檢測元件DI會將超音波傳感器PM產生的電壓訊號轉換為電荷並累積於輸出開關SWo的一端。輸出開關SWo則會將累積的電荷作為感測結果,並將感測結果以電流的形式選擇性地輸出至控制系統320。
FIG. 3 is a simplified functional block diagram of the
控制系統320包含移位暫存器322、多個電流檢測電路324、以及類比數位轉換電路326。移位暫存器322用於依序驅動(例如,由上至下逐列驅動)超音波畫素電路
312和超音波傳感器PM,以發射超音波、感測超音波、以及輸出感測結果。每個電流檢測電路324耦接於部分的超音波畫素電路312(例如,耦接於一行的超音波畫素電路312),以接收對應的感測結果。如第3圖所示,電流檢測電路324包含放大器,還包含並聯於該放大器的輸出端和其中一輸入端之間的電容與開關。電流檢測電路324會將接收到的電流形式的感測結果轉換為對應的電壓,並將該對應的電壓輸出至類比數位轉換電路326。
The
在某一實施例中,電流檢測電路324是用一電流源來實現。該電流源的一端用於接收前述的感測結果,並用於將電流形式的感測結果轉換為對應的分壓,且用於將該對應的分壓輸出至類比數位轉換電路326。
In an embodiment, the
在某些實施例中,第1圖和第2圖的顯示裝置100和200包含第3圖的超音波感測陣列310與控制系統320,以實現前述的各種超音波感測功能。超音波感測陣列310可以設置於TFT電路層132之中。控制系統320可以全部設置於TFT電路層132之中,或是部分設置於TFT電路層132中而另一部分設置於額外的基板(例如,軟性印刷電路板)上。
In some embodiments, the
第4圖為依據本揭示文件一實施例的超音波畫素電路400的功能方塊圖。超音波畫素電路400包含峰值檢測元件DI、重置電路410、以及輸出電路420。峰值檢測元件DI耦接於第一節點N1和第二節點N2之間,且透過第二節點N2耦接於超音波傳感器PM的一端。超音波傳感器PM的
另一端用於接收驅動電壓Vbias,驅動電壓Vbias用於利用震盪(oscillation)波形來驅動超音波傳感器PM發射超音波。
FIG. 4 is a functional block diagram of an
峰值檢測元件DI用於將超音波傳感器PM於第二節點N2產生的電壓震盪轉換為對應的電荷並儲存於第一節點N1。實作上,峰值檢測元件DI可以用PN二極體元件或是PIN二極體元件來實現,其中二極體元件的陽極端和陰極端分別耦接於第二節點N2和第一節點N1。 The peak detection element DI is used to convert the voltage oscillation generated by the ultrasonic sensor PM at the second node N2 into a corresponding charge and store it in the first node N1. In practice, the peak detection element DI can be implemented by a PN diode element or a PIN diode element, wherein the anode terminal and the cathode terminal of the diode element are respectively coupled to the second node N2 and the first node N1.
重置電路410耦接於第一節點N1和第二節點N2,用於設置第一節點N1和第二節點N2的電壓,且包含第一開關T1和第二開關T2。第一開關T1的第一端耦接於第一節點N1。第二開關T2的第一端耦接於第二節點N2。第一開關T1的第二端和第二開關T2的第二端用於接收第一參考電壓Vint1。第一開關T1的控制端和第二開關T2的控制端用於接收重置控制訊號Sint,亦即當重置電路410設置第一節點N1的電壓時,重置電路410也會設置第二節點N2的電壓。
The
輸出電路420耦接於第一節點N1,用於依據第一節點N1的電壓提供感測電流Ise,且包含驅動電晶體Tr、輸出開關To、以及儲存電容Cst。驅動電晶體Tr的第一端用於接收系統電壓VDD,驅動電晶體Tr的控制端則耦接於第一節點N1。輸出開關To的第一端耦接於驅動電晶體Tr的第二端,輸出開關To的第二端耦接於感測資料線Lse,輸出開關To的控制端用於接收輸出控制訊號Sread。儲存電容Cst
的第一端耦接於第一節點N1,儲存電容Cst的第二端則用於接收系統電壓VDD。
The
在本實施例中,儲存電容Cst為驅動電晶體Tr的第一端(例如,源極)和控制端(例如,閘極)之間的寄生電容元件,但本揭示文件並不以此為限。在一實施例中,儲存電容Cst和驅動電晶體Tr為不同的元件。例如,儲存電容Cst可以是利用不同金屬層重疊而形成的電容元件。 In this embodiment, the storage capacitor Cst is a parasitic capacitance element between the first terminal (for example, the source) and the control terminal (for example, the gate) of the driving transistor Tr, but the present disclosure is not limited to this . In one embodiment, the storage capacitor Cst and the driving transistor Tr are different components. For example, the storage capacitor Cst may be a capacitive element formed by overlapping different metal layers.
實作上,第4圖的第一開關T1、第二開關T2、驅動電晶體Tr、以及輸出開關To可以用各種合適種類的P型電晶體來實現。例如,P型薄膜電晶體或P型金氧半場效電晶體。 In practice, the first switch T1, the second switch T2, the driving transistor Tr, and the output switch To in FIG. 4 can be implemented by various suitable types of P-type transistors. For example, P-type thin film transistor or P-type metal oxide half field effect transistor.
在一實施例中,第4圖的超音波畫素電路400和超音波傳感器PM,分別可用於實現第3圖的超音波畫素電路312和超音波傳感器PM。在此情況下,感測資料線Lse是耦接於第3圖中的一行超音波畫素電路312和對應的一個電流檢測電路324。超音波畫素電路400(亦即,超音波畫素電路312)可將感測電流Ise作為感測結果,透過感測資料線Lse輸出至電流檢測電路324。
In one embodiment, the
第5圖為第4圖的超音波畫素電路400的多個控制訊號與節點電壓的波形示意圖。第6A至6C圖為第4圖的超音波畫素電路400在不同運作階段中的等效電路操作示意圖。
FIG. 5 is a schematic diagram of waveforms of multiple control signals and node voltages of the
請參照第5圖和第6A圖,在重置階段P1中,重置控制訊號Sint具有邏輯高準位(例如,低電壓準位),輸出 控制訊號Sread具有邏輯低準位(例如,高電壓準位),且驅動電壓Vbias具有震盪波形。因此,第一開關T1和第二開關T2會導通,以將第一節點N1和第二節點N2的電壓維持於第一參考電壓Vint1,進而關斷峰值檢測元件DI。輸出開關To會關斷,且超音波傳感器PM會產生超音波。 Please refer to Figure 5 and Figure 6A. In the reset phase P1, the reset control signal Sint has a logic high level (for example, a low voltage level), and outputs The control signal Sread has a logic low level (for example, a high voltage level), and the driving voltage Vbias has an oscillating waveform. Therefore, the first switch T1 and the second switch T2 are turned on to maintain the voltages of the first node N1 and the second node N2 at the first reference voltage Vint1, thereby turning off the peak detection element DI. The output switch To is turned off, and the ultrasonic sensor PM generates ultrasonic waves.
請參照第5圖和第6B圖,在感測階段P2中,重置控制訊號Sint和輸出控制訊號Sread都具有邏輯低準位,且驅動電壓Vbias維持於固定準位。因此,第一開關T1、第二開關T2、以及輸出開關To會關斷。當超音波傳感器PM接收到反射的超音波而震動時,第二節點N2的電壓會具有對應的震盪波形。若第二節點N2的電壓高於一預設準位Vp,峰值檢測元件DI會導通而將第二節點N2的電荷傳遞至第一節點N1。 Referring to FIGS. 5 and 6B, in the sensing phase P2, the reset control signal Sint and the output control signal Sread both have a logic low level, and the driving voltage Vbias is maintained at a fixed level. Therefore, the first switch T1, the second switch T2, and the output switch To are turned off. When the ultrasonic sensor PM receives the reflected ultrasonic wave and vibrates, the voltage of the second node N2 will have a corresponding oscillating waveform. If the voltage of the second node N2 is higher than a predetermined level Vp, the peak detection element DI will be turned on to transfer the charge of the second node N2 to the first node N1.
換言之,第一節點N1在感測階段P2中所獲得的電荷量,會對應於超音波傳感器PM的震動強度和頻率等等因素。 In other words, the amount of charge obtained by the first node N1 in the sensing phase P2 will correspond to factors such as the vibration intensity and frequency of the ultrasonic sensor PM.
請參照第5圖和第6C圖,在輸出階段P3中,重置控制訊號Sint具有邏輯低準位,輸出控制訊號Sread具有邏輯高準位,且驅動電壓Vbias維持於固定準位。因此,第一開關T1和第二開關T2會關斷,而輸出開關To會導通。由於驅動電晶體Tr工作於飽和區,驅動電晶體Tr會提供感測電流Ise,且感測電流Ise的大小會對應於第一節點N1的電壓。感測電流Ise會經由輸出開關To輸出至感測資料線Lse。 Referring to FIGS. 5 and 6C, in the output stage P3, the reset control signal Sint has a logic low level, the output control signal Sread has a logic high level, and the driving voltage Vbias is maintained at a fixed level. Therefore, the first switch T1 and the second switch T2 are turned off, and the output switch To is turned on. Since the driving transistor Tr works in the saturation region, the driving transistor Tr will provide the sensing current Ise, and the magnitude of the sensing current Ise will correspond to the voltage of the first node N1. The sensing current Ise is output to the sensing data line Lse through the output switch To.
第7圖為依據本揭示文件一實施例的超音波畫
素電路700的功能方塊圖。第7圖的超音波畫素電路700相似於第4圖的超音波畫素電路400,差異在於,超音波畫素電路700的峰值檢測元件DI的耦接方向相反於超音波畫素電路400的峰值檢測元件DI。例如,在超音波畫素電路700的峰值檢測元件DI是以二極體來實現的一實施例中,超音波畫素電路700的峰值檢測元件DI是以陽極端耦接於第一節點N1,並以陰極端耦接於第二節點N2。
Figure 7 is an ultrasound picture according to an embodiment of the present disclosure
The functional block diagram of the
於感測階段P2中,若第二節點N2的電壓低於另一預設準位,超音波畫素電路700的峰值檢測元件DI會導通,進而將第一節點N1的電荷傳遞至第二節點N2。
In the sensing phase P2, if the voltage of the second node N2 is lower than another preset level, the peak detection element DI of the
第8圖為依據本揭示文件一實施例的超音波畫素電路800的功能方塊圖。第8圖的超音波畫素電路800相似於第4圖的超音波畫素電路400,差異在於,超音波畫素電路800的第一開關T1的第二端耦接於第二節點N2(亦即,第二開關T2的第一端)。
FIG. 8 is a functional block diagram of an
第9圖為依據本揭示文件一實施例的超音波畫素電路900的功能方塊圖。第9圖的超音波畫素電路900相似於第4圖的超音波畫素電路400,差異在於,超音波畫素電路900的第二開關T2的第二端耦接於第一節點N1(亦即,第一開關T1的第一端)。
FIG. 9 is a functional block diagram of an
第10圖為依據本揭示文件一實施例的超音波畫素電路1000的功能方塊圖。第10圖的超音波畫素電路1000相似於第4圖的超音波畫素電路400,差異在於,超音波畫素電路1000的第一開關T1的第二端用於接收第一參
考電壓Vint1,超音波畫素電路1000的第二開關T2的第二端用於接收第二參考電壓Vint2,且第一參考電壓Vint1不同於第二參考電壓Vint2。在一實施例中,第一參考電壓Vint1低於第二參考電壓Vint2。
FIG. 10 is a functional block diagram of an
由上述可知,上述的多個實施例中的顯示裝置和超音波畫素電路具有精簡的電路架構,因而能達成高解析度的指紋、手勢、或觸控偵測,並降低製造複雜度。 It can be seen from the above that the display device and the ultrasonic pixel circuit in the above-mentioned multiple embodiments have a simplified circuit structure, and thus can achieve high-resolution fingerprint, gesture, or touch detection, and reduce manufacturing complexity.
第11圖為第4圖的超音波畫素電路400在一實施例中的模擬示意圖。第12圖為第4圖的超音波畫素電路400在另一實施例中的模擬示意圖。由第11圖可知,在感測階段P2中,當第二節點N2的電壓具有峰值約為2.5V的震盪波形時,第一節點N1的電壓會由0V上升至約1.7V。由第12圖可知,在感測階段P2中,當第二節點N2的電壓具有峰值約為3.0V的震盪波形時,第一節點N1的電壓會由0V上升至約2.2V。
FIG. 11 is a simulation diagram of the
因此,在系統電壓VDD被設置為約4~6V且感測資料線Lse的電壓被合理地設置為約1.4V的情況下,驅動電晶體Tr便可以工作於飽和區,進而輸出對應於第一節點N1的電壓之驅動電流Ise。 Therefore, when the system voltage VDD is set to about 4~6V and the voltage of the sensing data line Lse is reasonably set to about 1.4V, the driving transistor Tr can work in the saturation region, and the output corresponding to the first The driving current Ise of the voltage of the node N1.
在上述的多個實施例中,系統電壓VDD高於感測資料線Lse的電壓,但本揭示文件不以此為限。在某些實施例中,第4、7~10圖的系統電壓VDD低於感測資料線Lse的電壓,使得驅動電晶體Tr在輸出階段P3中會自感測資料線Lse抽取感測電流Ise。 In the above embodiments, the system voltage VDD is higher than the voltage of the sensing data line Lse, but the present disclosure is not limited to this. In some embodiments, the system voltage VDD in Figures 4 and 7 to 10 is lower than the voltage of the sensing data line Lse, so that the driving transistor Tr will draw the sensing current Ise from the sensing data line Lse in the output stage P3. .
在另外一些實施例中,第4、7~10圖的第一開關T1和第二開關T2可以用N型電晶體來實現,且重置控制訊號Sint會對應地具有與第5圖反相的波形。另外,輸出開關To也可以用N型電晶體來實現,且輸出控制訊號Sread會對應地具有與第5圖反相的波形。 In other embodiments, the first switch T1 and the second switch T2 in Figs. 4 and 7 to 10 can be implemented by N-type transistors, and the reset control signal Sint will have the opposite phase to that of Fig. 5. Waveform. In addition, the output switch To can also be implemented with an N-type transistor, and the output control signal Sread will correspondingly have an inverted waveform from that shown in Figure 5.
在說明書及申請專利範圍中使用了某些詞彙來指稱特定的元件。然而,所屬技術領域中具有通常知識者應可理解,同樣的元件可能會用不同的名詞來稱呼。說明書及申請專利範圍並不以名稱的差異做為區分元件的方式,而是以元件在功能上的差異來做為區分的基準。在說明書及申請專利範圍所提及的「包含」為開放式的用語,故應解釋成「包含但不限定於」。另外,「耦接」在此包含任何直接及間接的連接手段。因此,若文中描述第一元件耦接於第二元件,則代表第一元件可通過電性連接或無線傳輸、光學傳輸等信號連接方式而直接地連接於第二元件,或者通過其他元件或連接手段間接地電性或信號連接至該第二元件。 Certain words are used in the specification and the scope of the patent application to refer to specific elements. However, those with ordinary knowledge in the technical field should understand that the same element may be called by different terms. The specification and the scope of the patent application do not use the difference in names as a way of distinguishing elements, but the difference in function of the elements as the basis for distinguishing. The "including" mentioned in the specification and the scope of the patent application is an open term, so it should be interpreted as "including but not limited to". In addition, "coupling" here includes any direct and indirect connection means. Therefore, if the text describes that the first element is coupled to the second element, it means that the first element can be directly connected to the second element through electrical connection, wireless transmission, optical transmission, or other signal connection methods, or through other elements or connections. The means is indirectly connected to the second element electrically or signally.
在此所使用的「及/或」的描述方式,包含所列舉的其中之一或多個項目的任意組合。另外,除非說明書中特別指明,否則任何單數格的用語都同時包含複數格的涵義。 The description method of "and/or" used herein includes any combination of one or more of the listed items. In addition, unless otherwise specified in the specification, any term in the singular case also includes the meaning of the plural case.
以上僅為本揭示文件的較佳實施例,凡依本揭示文件請求項所做的均等變化與修飾,皆應屬本揭示文件的涵蓋範圍。 The above are only the preferred embodiments of the present disclosure, and all equal changes and modifications made in accordance with the requirements of the present disclosure should fall within the scope of the disclosure.
400‧‧‧超音波畫素電路 400‧‧‧Ultrasonic pixel circuit
410‧‧‧重置電路 410‧‧‧Reset circuit
420‧‧‧輸出電路 420‧‧‧Output circuit
T1‧‧‧第一開關 T1‧‧‧First switch
T2‧‧‧第二開關 T2‧‧‧Second switch
Tr‧‧‧驅動電晶體 Tr‧‧‧Drive Transistor
To‧‧‧輸出開關 To‧‧‧Output switch
Cst‧‧‧儲存電容 Cst‧‧‧Storage capacitor
Sint‧‧‧重置控制訊號 Sint‧‧‧Reset control signal
Sread‧‧‧輸出控制訊號 Sread‧‧‧Output control signal
Ise‧‧‧感測電流 Ise‧‧‧Sensing current
Lse‧‧‧感測資料線 Lse‧‧‧Sensing data line
DI‧‧‧峰值檢測元件 DI‧‧‧Peak detection element
N1‧‧‧第一節點 N1‧‧‧First node
N2‧‧‧第二節點 N2‧‧‧Second node
Vint1‧‧‧第一參考電壓 Vint1‧‧‧First reference voltage
Vbias‧‧‧驅動電壓 Vbias‧‧‧Drive voltage
VDD‧‧‧系統電壓 VDD‧‧‧System voltage
PM‧‧‧超音波傳感器 PM‧‧‧Ultrasonic sensor
Claims (10)
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