TWI699923B - Method for forming light-emitting diode structure - Google Patents

Abstract

A method for forming a light-emitting diode structure is disclosed herein. The method includes forming a patterned reflection layer over a donor substrate. A near-infrared absorbing functional group modified organic thin film is formed over the patterned reflection layer. The near-infrared absorbing functional group modified organic thin film is exposed to light to transfer a portion of the near-infrared absorbing functional group modified organic thin film to a semiconductor substrate. Thus, a patterned organic thin film is formed under the semiconductor substrate. The near-infrared absorbing functional group modified organic thin film has an absorption intensity larger than 10^0.2 to light having a wavelength larger than 600nm.

Description

Method for forming organic light emitting diode structure

The present invention relates to a method for forming an organic light-emitting diode structure, in particular to a method for forming an organic light-emitting diode structure containing a thin film of organic material modified by near-infrared light-absorbing functional groups.

Organic Light-Emitting Diode (OLED) has the advantages of wide viewing angle, high contrast, low power consumption, fast response speed, low operating voltage, simple manufacturing process and self-luminous without backlight module. Therefore, It can greatly reduce production costs and is considered a highly competitive display technology.

The organic light-emitting diode is basically a multilayer film structure, including an anode, a cathode, and an organic material film between the anode and the cathode. A traditional method for forming an organic light-emitting diode structure is to use thermal vapor deposition to fabricate each layer of organic material film in the organic light-emitting diode on a substrate, and then perform bonding and packaging to complete the organic light-emitting diode device. Another traditional method for forming an organic light-emitting diode structure is Flash mask transfer lithography. First, an absorbing layer with heat absorption capability is formed on a prebody containing a patterned reflective layer On the substrate, then the single layer A thin film of organic material is formed on the absorbing layer. Then, light is provided from below the prebody substrate. Part of the light is blocked by the reflective layer and cannot be absorbed by the absorbing layer. The light not blocked by the reflective layer can heat the absorbing layer. The absorption layer can heat the organic material thin film above it to volatilize and transfer to another substrate, and form a patterned organic light-emitting diode structure on the other substrate.

However, due to the poor heat absorption of the organic material film, it generally affects the transfer effect. For example, the organic material film after the transfer may have chipped corners or unclear edges. In addition, incomplete heat conduction between the organic material film and the absorption layer will result in uneven film thickness after transfer. The above-mentioned problems will lead to poor yield of the resulting organic light-emitting diode structure. In view of this, it is necessary to provide a new method of forming an organic light emitting diode structure.

In order to solve the above-mentioned shortcomings of the prior art, the present invention provides a method of forming an organic light-emitting diode structure containing a thin film of organic material modified with near-infrared light-absorbing functional groups. In order to increase the heat absorption characteristics of the organic material film, the Near-Infrared absorbing functional group is introduced into the molecular structure of the organic material film, so that the organic material film formed by the modified material can be directly The light energy is converted into heat energy, and smoothly volatilized to form a patterned organic light-emitting diode structure.

One aspect of the present invention is a method for forming an organic light-emitting diode structure, including forming a patterned reflective layer on a pre-body substrate; forming a near-infrared light-absorbing functional group-modified organic material film on the patterned reflective layer And irradiate the organic material film modified by the near-infrared light-absorbing functional group with a light from the side opposite to the side where the patterned reflective layer is formed on the prebody substrate, so as to close the area not covered by the patterned reflective layer The organic material film modified by infrared light absorbing functional group is transferred to the surface of a semiconductor substrate to form a patterned organic material film. The organic material film modified by the near-infrared light absorbing functional group has an absorption intensity greater than 10 for light with a wavelength greater than 600 nm. ^0.2 .

According to one or more embodiments of the present invention, the organic material thin film is a hole injection layer, a hole transport layer, a light emitting layer, or an electron transport layer.

According to one or more embodiments of the present invention, the near-infrared light-absorbing functional group includes a nitro group (-NO ₂ ), a hydroxyl group (-OH), an aldehyde group (-CHO), a carbonyl group (C=O), a carboxyl group (-COOH) , Chloro (-Cl), bromo (-Br) or groups containing the above functional groups.

According to one or more embodiments of the present invention, the organic material film modified with near-infrared light-absorbing functional groups has a molecular energy level, the highest occupied orbital of the molecular energy level is less than or equal to -4.5 eV, and the lowest unoccupied orbital of the molecular energy level Less than or equal to -1.8eV or the energy level difference between the highest occupied orbital of the molecular energy level and the lowest unoccupied orbital of the molecular energy level is between 2~4.5eV.

According to one or more embodiments of the present invention, the organic material film modified with near-infrared light-absorbing functional groups has a thermal conductivity greater than 0.1 W/mK.

According to one or more embodiments of the present invention, the organic material film modified with near-infrared light-absorbing functional groups has a heat capacity greater than 0.8 cal/g°C.

According to one or more embodiments of the present invention, the light system is emitted by a light source, and the light source is selected from the group consisting of flash lamps, laser lamps, light-emitting diodes, halogen lamps, cold cathode ray tube lamps, fluorescent lamps, incandescent lamps and combinations thereof The group.

Another aspect of the present invention is a method for forming an organic light-emitting diode structure, including forming a first patterned reflective layer on a first pre-body substrate; forming a first organic light-absorbing functional group modified with near-infrared light The material film is on the first patterned reflective layer; the first organic material film modified by the near-infrared light-absorbing functional group is irradiated with a light from the side opposite to the side on which the first patterned reflective layer is formed on the first substrate substrate, The first organic material film modified by the near-infrared light-absorbing functional group in the area not covered by the first patterned reflective layer is transferred to the surface of a semiconductor substrate to form a first patterned organic material film; to form a second A patterned reflective layer is formed on a second pre-body substrate; a second organic material film modified by a near-infrared light-absorbing functional group is formed on the second patterned reflective layer; a second pattern is formed from the second pre-body substrate with light The opposite side of the reflective layer is irradiated with the second organic material film modified by the near-infrared light-absorbing functional group to remove the second organic material film modified by the near-infrared light-absorbing functional group in the area not covered by the second patterned reflective layer The organic material film is transferred to the surface of the semiconductor substrate to form a second patterned organic material film, wherein the first organic material film is modified with near-infrared light-absorbing functional groups and the second organic material film is modified with near-infrared light-absorbing functional groups For light with a wavelength greater than 600nm, the absorption intensity is greater than 10 ^0.2 .

According to one or more embodiments of the present invention, the first organic material film and the second organic material film are independently a red light-emitting layer, a green light-emitting layer or a blue light-emitting layer.

According to one or more embodiments of the present invention, the first organic material film and the second organic material film are independently a hole injection layer, a hole transport layer, a light emitting layer, or an electron transport layer.

In summary, the present invention introduces the near-infrared light-absorbing functional group into the molecular structure of the material of the organic material film, so that the modified material can directly convert light energy into heat energy, so that the near-infrared light-absorbing functional group The modified organic material film evaporates smoothly, which improves the resolution of the transfer and the yield of the formed organic light-emitting diode structure. In addition, since there is no need to make an absorption layer, the production cost can also be reduced.

Hereinafter, the above description will be described in detail by way of implementation, and a further explanation will be provided for the technical solution of the content of the present invention.

110: Semiconductor substrate

111: The first prebody substrate

112: first patterned reflective layer

113: second prebody substrate

114: second patterned reflective layer

115: Prebody substrate

116: patterned reflective layer

120: The first carrier injection layer modified by near-infrared light-absorbing functional groups

122: Patterned first carrier injection layer

130: The first carrier transfer layer modified by near-infrared light-absorbing functional groups

132: Patterned first carrier transfer layer

142: patterned light-emitting layer

152: Patterned second carrier transfer layer

154: Light-emitting stack structure

160: light

211: The first prebody substrate

212: first patterned reflective layer

213: The second prebody substrate

214: second patterned reflective layer

215: The third prebody substrate

216: third patterned reflective layer

217: Prebody substrate

218: Patterned reflective layer

222: Patterned first carrier injection layer

232: Patterned first carrier transfer layer

242: The first light-emitting layer modified with near-infrared light-absorbing functional groups

243: Patterned first light-emitting layer

244: The second light-emitting layer modified by near-infrared light-absorbing functional groups

245: Patterned second light-emitting layer

246: The third light-emitting layer modified by near-infrared light-absorbing functional groups

247: Patterned third light-emitting layer

250: The second carrier transfer layer modified with near-infrared light-absorbing functional groups

252: Patterned second carrier transfer layer

254: The first light-emitting stack structure

256: second light emitting stack structure

258: The third light-emitting stack structure

In order to make the above and other objectives, features, advantages and implementations of the present invention more obvious and understandable, the detailed description of the accompanying drawings is as follows: Figures 1A~1E are based on an embodiment of the present invention. A schematic cross-sectional view of each stage of the method of an organic light-emitting diode structure; Fig. 2 is a schematic cross-sectional view of a stage of a method of forming an organic light-emitting diode structure according to an embodiment of the present invention; and 3A~3H The drawings are schematic cross-sectional diagrams of various stages of a method for forming an organic light-emitting diode structure according to an embodiment of the present invention.

Hereinafter, a plurality of embodiments of the present invention will be disclosed in drawings. For clear description, many practical details will be described in the following description. However, it should be understood that these practical details should not be used to limit the present invention. That is, in various embodiments of the present invention, these practical details are unnecessary. In addition, in order to simplify the drawings, some conventionally used structures and elements are shown in the drawings in a simple and schematic manner.

The terms "include", "include", "have", "include", "involved" and other similar meanings used in this article are all open-ended. For example, it means including but not limited to this.

Unless there are other clear references in the content, the singular words used in this article include plural referents, so for example, unless there are other clear references in the content, one layer includes some implementations with two or more layers. Mode, by referring to the specific designation of "one embodiment", in at least one of the embodiments of the present invention, a specific feature, structure, or characteristic is expressed, so "one embodiment" is used everywhere. When the phrase appears through a special reference, it does not need to refer to the same embodiment. Furthermore, in one or more embodiments, these special features, structures, or characteristics can be combined with each other as appropriate.

In addition, relative terms, such as "below" or "bottom" and "top" or "top", are used to describe the relationship between one element and another element shown in the drawings. It is understandable that the relative vocabulary is used to describe different orientations of the device other than those described in the drawings. For example, if the device in one figure is turned over, the components will be described as being on the "lower" side of other components and will be oriented on the "upper" side of the other components. The illustrative vocabulary "下", according to the attached The specific orientation of the map can include two orientations, "down" and "up".

The invention provides a method for forming an organic light-emitting diode structure containing a thin film of organic material modified by near-infrared light-absorbing functional groups. In order to increase the heat absorption properties of the organic material film, the near-infrared light-absorbing functional group is introduced into the molecular structure of the material of the organic material film, so that the organic material film modified by the near-infrared light-absorbing functional group can directly convert light energy into heat energy. Good heat absorption capacity.

In one embodiment, the near-infrared light-absorbing functional group includes a nitro group (-NO ₂ ), a hydroxyl group (-OH), an aldehyde group (-CHO), a carbonyl group (C=O), a carboxyl group (-COOH), a chlorine group ( -Cl), bromo (-Br) or a group containing the above functional groups.

Specifically, the organic material thin film is a hole injection layer, a hole transport layer, a light emitting layer, or an electron transport layer. The hole injection layer, hole transport layer, light-emitting layer and electron transport layer all contain highly π-conjugated systems in their molecular structures, such as polyaromatic rings, so general synthetic methods for modifying aromatic rings can be used The above-mentioned near-infrared light-absorbing functional group is modified to the molecular structure of the material of the hole injection layer, hole transport layer, light-emitting layer and electron transport layer to form a hole injection layer modified by the near-infrared light-absorbing functional group, A hole transport layer modified with near-infrared light-absorbing functional groups, a light-emitting layer modified with near-infrared light-absorbing functional groups, and an electron transport layer modified with near-infrared light-absorbing functional groups.

According to the following embodiments, the aromatic ring structure in the material of the organic material film is modified to introduce near-infrared light absorbing functional groups into the molecular structure of the material of the organic material film. In one embodiment, the material of the organic material film is mixed with nitric acid, and then concentrated sulfuric acid is used as a catalyst to perform a nitration reaction to modify the nitro group to the aromatic ring. In one embodiment, the material of the organic material film is reacted with methyl iodide, and then aluminum chloride is used as a catalyst to modify the methyl group to the aromatic ring, and the methyl group is further oxidized to an aldehyde group. The aromatic ring. In one embodiment, the aldehyde group of the aromatic ring modified with the aldehyde group is further oxidized to a carboxyl group to obtain the aromatic ring modified with the carboxyl group. In one embodiment, hydrogenation of an aromatic ring modified with an aldehyde group produces an aromatic ring modified with a hydroxyl group. In one embodiment, the material of the organic material film and the halogen molecule undergo a halogenation reaction, and a catalyst, such as iron chloride or iron bromide, is added to obtain an aromatic ring modified with a chlorine group or a bromine group. Therefore, the hole injection layer, hole transport layer, light-emitting layer and electron transport layer containing aromatic ring structure can all be modified by the above-mentioned synthesis method. Each layer modified by the near-infrared light-absorbing functional group has high absorption coefficient and good Thermal stability, and the absorption intensity of light with a wavelength greater than 600nm is greater than 10 ^0.2 . Special attention is paid to the fact that the organic material film modified with near-infrared light-absorbing functional groups can still retain its original characteristics, such as hole injection ability, hole transfer ability, luminescence characteristics and electron transfer ability.

For example, the material of the hole injection layer includes poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT: PSS).

For example, the material of the hole transport layer includes N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (N,N'-Bis(naphthalen-1- yl)-N,N'-bis(phenyl)-benzid ine, NPB), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (2,3,6,7,10, 11-Hexacyano-1,4,5,8,9,12-hexaazatriph enylene, HAT-CN), 4,4',4"-tris(carbazol-9-yl) triphenylamine (4,4',4 "-Tris (carbazol-9-yl) triphenylamine, TCTA), copper phthalocyanine (Copper (II) phthalocyanine, CuPC).

For example, the material of the light-emitting layer includes fluorescent materials, phosphorescent materials, or combinations thereof. Each fluorescent material and phosphorescent material can emit red light (for example: 620~660nm), green light (for example: 520~560nm), and blue light. (For example: 430~480nm) or a mixture of these shades. Specifically, the material of the light-emitting layer includes polyfluorene (PF), tris(8-hydroxy quinoline) aluminum (Ⅲ), Alq ₃ ), or octaethylporphine platinum (platinum-octaethyl-porphyrin, PtOEP).

For example, the material of the electron transport layer includes tris(8-quinolinolato) aluminum, 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline (bathocuproine, BCP) , 4,7-diphenyl-1,10-phenanthroline (4,7-diphenyl-1,10-phenanthroline, BPhen), 2-methyl-9,10-bis(2-naphthalene)anthracene (2-methyl-9,10-di[2-naphthyl]anthracene, MADN), 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)(1,3,5- Tris(1-phenyl-1H-benzimidazol-2-yl)benzene, TPBI), 1,3,5-tris[(3-pyridyl)-3-phenyl]benzene (1,3,5-Tri(m -pyridin-3-ylphenyl)benzene, TmPyPhB).

In one embodiment, the material of the hole injection layer, the hole transport layer, the light emitting layer and the electron transport layer modified by the near-infrared light-absorbing functional group each has a molecular energy level, and the highest occupied orbital of the molecular energy level is less than or equal to -4.5eV, the lowest unoccupied orbital of molecular energy level is less than or equal to -1.8eV or the energy level difference between the highest occupied orbital of molecular energy level and the lowest unoccupied orbital of molecular energy level is between 2~4.5eV.

In one embodiment, the material of the hole injection layer, the hole transport layer, the light emitting layer and the electron transport layer modified by the near-infrared light absorbing functional group each has a thermal conductivity greater than 0.1 W/mK. In one embodiment, the material of the hole injection layer, the hole transport layer, the light emitting layer and the electron transport layer modified by the near-infrared light absorbing functional group each has a heat capacity greater than 0.8 cal/g°C.

FIGS. 1A to 1E are schematic cross-sectional diagrams of various stages of a method for forming an organic light emitting diode structure according to an embodiment of the present invention. As shown in Figure 1A, Figure 1A illustrates a semiconductor substrate 110, a first pre-substrate 111, a first patterned reflective layer 112, and a first carrier injection layer 120 modified with a near-infrared light-absorbing functional group . The forming method includes the following steps: forming a first patterned reflective layer 112 on the first pre-substrate 111, forming a first carrier injection layer 120 modified by a near-infrared light absorbing functional group on the first patterned reflective layer 112 and the second On a pre-substrate 111, a light 160 is used to irradiate the first carrier injection layer modified by the near-infrared light-absorbing functional group from the side opposite to the side where the first patterned reflective layer 112 is formed on the first pre-substrate 111 120, to transfer the first carrier injection layer 120 modified by the near-infrared light absorbing functional group in the area not covered by the first patterned reflective layer 112 to the surface of the semiconductor substrate 110 to form the one shown in FIG. 1B Patterned first Sub-injection layer 122. Due to the modification of the near-infrared light-absorbing functional group, the first carrier injection layer 120 modified by the near-infrared light-absorbing functional group can directly convert light energy into heat energy so that the area not covered by the first patterned reflective layer 112 The sublimation can be transferred to the surface of the semiconductor substrate 110 to achieve the purpose of forming the patterned first carrier injection layer 122 on the semiconductor substrate 110.

In one embodiment, the semiconductor substrate 110 includes at least one thin-film transistor (TFT) (not shown) to provide a driving current to the organic light emitting diode structure, such as amorphous silicon (α-Si) Thin film transistors, low temperature polysilicon (LTPS) thin film transistors or metal oxide thin film transistors. For example, a thin film transistor is first fabricated on a glass substrate, and then a protective layer is covered on the thin film transistor to form a semiconductor substrate. In one embodiment, the method of forming the protective layer includes chemical vapor deposition, physical vapor deposition, spin coating, or inkject printing . In one embodiment, the first pre-body substrate 111 includes a glass substrate or other substrates with light-transmitting properties. In one embodiment, the first patterned reflective layer 112 includes a mask or a photomask.

In one embodiment, the method of forming the first carrier injection layer 120 modified by the near-infrared light-absorbing functional group on the first patterned reflective layer 112 and the pre-body substrate 111 is vacuum deposition, vacuum thermal evaporation Plating (vacuum thermal evaporation), spin coating, spray coating (spray coating), printing coating, rubbing or sputtering (sputtering deposition).

In one embodiment, the light 160 is emitted by a light source, and the light source is selected from a flash lamp, a laser lamp, a light emitting diode, a halogen lamp, a cold cathode ray tube lamp, a fluorescent lamp, an incandescent lamp, and combinations thereof. Formed group.

As shown in Figure 1C, Figure 1C illustrates the semiconductor substrate 110, a second pre-substrate 113, a second patterned reflective layer 114, a patterned first carrier injection layer 122, and a near-infrared light-absorbing functional group Modified first carrier transfer layer 130. Please refer to the embodiment described in FIG. 1A, a first carrier transfer layer 130 modified with a near-infrared light-absorbing functional group is formed on the second pre-substrate 113 and the second patterned reflective layer 114, and light 160 passes from the The opposite side of the second substrate 113 on which the second patterned reflective layer 114 is formed is irradiated with the first carrier transfer layer 130 modified by the near-infrared light-absorbing functional group so as not to be covered by the second patterned reflective layer 114 The first carrier transfer layer 130 modified by the near-infrared light-absorbing functional group is transferred to the surface of the semiconductor substrate 110 to form the patterned first carrier transfer layer 132 as shown in FIG. 1D. Due to the modification of the near-infrared light-absorbing functional group, the first carrier transfer layer 130 modified with the near-infrared light-absorbing functional group can directly convert light energy into heat energy so that the area not covered by the second patterned reflective layer 114 It volatilizes and can be transferred to the surface of the semiconductor substrate 110. It is worth noting that the pattern of the first patterned reflective layer 112 is the same as that of the second patterned reflective layer 114, so after the transfer, the patterned first carrier transfer layer 132 will be aligned and stacked on the patterned first carrier The surface of the injection layer 122.

As shown in Fig. 1E, there is a light emitting under the semiconductor substrate 110 Stack structure 154. The light emitting stack structure 154 includes a patterned first carrier injection layer 122, a patterned first carrier transfer layer 132, a patterned light-emitting layer 142, and a patterned second carrier transfer layer 152. Among them, the patterned light-emitting layer 142 and the patterned second carrier transfer layer 152 are respectively volatilized and transferred from the light-emitting layer modified with near-infrared light-absorbing functional groups and the second carrier transfer layer modified with near-infrared light-absorbing functional groups. Therefore, for the method of forming the patterned light-emitting layer 142 and the patterned second carrier transfer layer 152, please refer to the embodiment shown in FIGS. 1A to 1D.

In addition, the organic light emitting diode structure further includes a first electrode (not shown) and a second electrode (not shown) respectively electrically connected to an external electric field, and the first electrode is located in the patterned first carrier injection layer. Above 122, and the first electrode can be disposed in the semiconductor substrate 110 or under the semiconductor substrate 110, and is directly electrically connected to the source or drain of the thin film transistor. The second electrode is located under the patterned second carrier transfer layer 152. Specifically, after the light emitting stack structure 154 is formed, a second electrode is formed under the light emitting stack structure 154 to form an organic light emitting diode structure.

In one embodiment, the first electrode is an anode, the first carrier injection layer is a hole injection layer, the first carrier transport layer is a hole transport layer, and the second carrier The transport layer is an electron transport layer, the second electrode is a cathode, and the anode is directly connected to the source of the thin film transistor. The organic light emitting diode structure is forward-stacked. In another embodiment, the organic light emitting diode structure can omit the first carrier injection layer. In another embodiment, the first electrode is a cathode, and the first carrier transport layer is electron transport The second carrier transport layer is a hole transport layer, the second electrode is an anode, and the cathode is directly connected to the drain of the thin film transistor. The organic light-emitting diode structure is inverted. It is particularly important to note that the number of organic material films contained in the organic light-emitting diode structure can be adjusted according to different material characteristics.

In one embodiment, the material of the cathode includes magnesium silver (Mg: Ag), aluminum, silver, gold, calcium, nickel, platinum, lithium, zinc oxide (Zinc Oxide), aluminum-doped Zinc Oxide (AZO) (Al: ZnO)) and combinations thereof. In one embodiment, the material of the anode includes Indium Zinc Oxide (IZO).

FIG. 2 is a schematic cross-sectional view of a stage of a method for forming an organic light-emitting diode structure according to an embodiment of the present invention. The components included in Figure 2 are similar to those in Figure 1A. The difference is that in Figure 2, the first carrier injection layer 120 modified with near-infrared light-absorbing functional groups is located on a preform substrate 115 and a patterned substrate. Between the reflective layers 116, when the light 160 irradiates the first carrier injection layer 120 modified by the near-infrared light-absorbing functional group, the area not covered by the patterned reflective layer 116 can volatilize and be transferred under the semiconductor substrate 110. The area covered by the patterned reflective layer 116 is blocked by the patterned reflective layer 116 and cannot be transferred under the semiconductor substrate 110. The configuration shown in Figure 2 can also be used in all embodiments of the present invention.

3A to 3H are schematic cross-sectional diagrams at various stages of a method for forming an organic light-emitting diode structure according to an embodiment of the present invention. Referring to the embodiment shown in FIGS. 1A to 1E and FIG. 2, a patterned first carrier injection layer 222 and a patterned first carrier transfer layer 232 are formed under the semiconductor substrate 110 in FIG. 3A Stacked, in addition, shaped A first patterned reflective layer 212 is formed on a first pre-substrate 211, and a first light-emitting layer 242 modified with a near-infrared light-absorbing functional group is formed on the first patterned reflective layer 212 and the first pre-substrate 211 After that, light 160 is used to irradiate the first light-emitting layer 242 modified by the near-infrared light-absorbing functional group from the side opposite to the side on which the first patterned reflective layer 212 is formed on the first prebody substrate 211, so that the The first light-emitting layer 242 modified by the near-infrared light-absorbing functional group in the area covered by the reflective layer 112 is transferred to a part of the surface of the patterned first carrier transfer layer 232 and stacked neatly to form the one shown in FIG. 3B The first light emitting layer 243 is patterned.

Please refer to the embodiment shown in FIGS. 3A to 3B, using a second preform substrate 213, a second patterned reflective layer 214, and a second light-emitting layer modified with a near-infrared light-absorbing functional group as shown in FIG. 3C 244. Form a patterned second light-emitting layer 245 on part of the surface of the patterned first carrier transfer layer 232 as shown in the 3D diagram and stack neatly, which will not be repeated here.

Please refer to the embodiment shown in Figures 3A to 3B, using a third preform substrate 215 shown in Figure 3E, a third patterned reflective layer 216, and a third light-emitting layer modified with a near-infrared light-absorbing functional group 246. A patterned third light-emitting layer 247 is formed on a part of the surface of the patterned first carrier transfer layer 232 as shown in FIG. 3F and stacked neatly, which will not be repeated here.

Please refer to the embodiment shown in FIGS. 3A to 3B, using a prebody substrate 217, a patterned reflective layer 218, and a second carrier transfer layer 250 modified with a near-infrared light-absorbing functional group as shown in FIG. 3G. A patterned second carrier transfer layer 252 is formed on the patterned first light-emitting layer 243, the patterned second light-emitting layer 245, and the patterned third light-emitting layer 247 as shown in FIG. 3H The surface of the semiconductor substrate 110 is neatly stacked, so the first light emitting stack structure 254, the second light emitting stack structure 256, and the third light emitting stack structure 258 are formed under the semiconductor substrate 110. In addition, a second electrode (not shown) is further formed under the first light emitting stack structure 254, the second light emitting stack structure 256, and the third light emitting stack structure 258 to form a plurality of organic light emitting diode structures.

In one embodiment, the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer are independently a red light-emitting layer, a green light-emitting layer, or a blue light-emitting layer. In one embodiment, the first light-emitting layer is a red light-emitting layer, the second light-emitting layer is a green light-emitting layer, and the third light-emitting layer is a blue light-emitting layer. It can be seen that through the formation steps of 3A~3H, you can directly Three organic light-emitting diode structures with different light emission colors are formed, which can be directly used as pixels for colorful or full-color displays. There is no need to add additional color filters like liquid crystal displays, which can simplify the manufacturing process and make the display more The benefits of being thin and light, in addition, there is no need to add a backlight behind the panel, which greatly reduces power consumption and cost, and has great commercial potential.

Although the content of the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone familiar with the art can make various changes and modifications without departing from the spirit and scope of the content of the present invention. Therefore, the present invention The scope of protection shall be determined by the scope of the patent application.

110: Semiconductor substrate

217: Prebody substrate

218: Patterned reflective layer

222: Patterned first carrier injection layer

232: Patterned first carrier transfer layer

243: Patterned first light-emitting layer

245: Patterned second light-emitting layer

247: Patterned third light-emitting layer

250: The second carrier transfer layer modified with near-infrared light-absorbing functional groups

252: Patterned second carrier transfer layer

254: The first light-emitting stack structure

256: second light emitting stack structure

258: The third light-emitting stack structure

Claims (10)

A method for forming an organic light-emitting diode structure includes: forming a patterned reflective layer on a pre-body substrate; forming a near-infrared light-absorbing functional group-modified organic material film on the patterned reflective layer; and Light irradiates the organic material film modified by the near-infrared light-absorbing functional group from the side opposite to the side on which the patterned reflective layer of the prebody substrate is formed, so that the near-infrared light-absorbing functional group is not covered by the patterned reflective layer. The infrared light-absorbing functional group modified organic material film is transferred to the surface of a semiconductor substrate to form a patterned organic material film, wherein the near-infrared light-absorbing functional group modified organic material film has an absorption intensity of light with a wavelength greater than 600nm Greater than 10 ^0.2 . The method for forming an organic light emitting diode structure according to claim 1, wherein the organic material thin film is a hole injection layer, a hole transport layer, a light emitting layer or an electron transport layer. The method for forming an organic light-emitting diode structure according to claim 1, wherein the near-infrared light-absorbing functional group includes a nitro group (-NO ₂ ), a hydroxyl group (-OH), an aldehyde group (-CHO), a carbonyl group (C =O), carboxyl (-COOH), chloro (-Cl), bromo (-Br) or groups containing the above functional groups. The method for forming an organic light-emitting diode structure according to claim 1, wherein the organic material modified with a near-infrared light-absorbing functional group The film has a molecular energy level, the highest occupied orbital of the molecular energy level is less than or equal to -4.5eV, the lowest unoccupied orbital of the molecular energy level is less than or equal to -1.8eV or the highest occupied orbital of the molecular energy level and the molecular energy The energy level difference of the lowest unoccupied orbit is between 2~4.5eV. The method for forming an organic light-emitting diode structure according to claim 1, wherein the organic material film modified with a near-infrared light-absorbing functional group has a thermal conductivity greater than 0.1 W/mK. The method for forming an organic light-emitting diode structure according to claim 1, wherein the organic material film modified with a near-infrared light-absorbing functional group has a heat capacity greater than 0.8 cal/g°C. The method for forming an organic light-emitting diode structure according to claim 1, wherein the light is emitted by a light source, and the light source is selected from a flash lamp, a laser lamp, a light-emitting diode, a halogen lamp, and a cold cathode ray tube lamp , Fluorescent lamps, incandescent lamps and their combinations. A method for forming an organic light-emitting diode structure includes: forming a first patterned reflective layer on a first pre-body substrate; forming a first organic material film modified by a near-infrared light-absorbing functional group on the first pattern On the reflective layer; irradiate the first organic material film modified by the near-infrared light-absorbing functional group with a light from the side opposite to the side on which the first patterned reflective layer is formed on the first substrate substrate to remove The first organic material film modified by the near-infrared light-absorbing functional group in the area covered by the first patterned reflective layer is transferred to the surface of a semiconductor substrate to form a first patterned organic material film; and a second pattern is formed Forming a reflective layer on a second pre-body substrate; forming a second organic material film modified by a near-infrared light-absorbing functional group on the second patterned reflective layer; forming the light from the second pre-body substrate The side opposite to the side of the second patterned reflective layer irradiates the second organic material film modified by the near-infrared light-absorbing functional group to absorb the near-infrared light in the area not covered by the second patterned reflective layer The functional group-modified second organic material film is transferred to the surface of the semiconductor substrate to form a second patterned organic material film, wherein the first organic material film modified by the near-infrared light absorption functional group and the near-infrared light absorption The second organic material film modified with functional groups has an absorption intensity greater than 10 ^{0.2 for} the light with a wavelength greater than 600 nm. The method for forming an organic light-emitting diode structure according to claim 8, wherein the first organic material film and the second organic material film are independently a red light-emitting layer, a green light-emitting layer or a blue light-emitting layer. The method for forming an organic light emitting diode structure according to claim 8, wherein the first organic material film and the second organic material film are independently a hole injection layer, a hole transport layer, a light emitting layer or An electron transport layer.

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