TWI699613B - Anti-static photomask - Google Patents
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Description
本揭露係關於一種光罩,且特別關於一種防靜電光罩。This disclosure relates to a photomask, and particularly relates to an antistatic photomask.
在現今的微影製程中需要使用光罩。然而,在使用光罩的過程中會造成靜電累積在光罩上。若在光罩上累積過多的靜電,則可能會在光罩圖案上造成靜電放電(Electrostatic discharge,ESD),進而破壞曝光後的圖形。舉例來說,在現今的光罩中,在光罩圖案的端部且鄰近金屬導線處因為靜電荷的累積,而會具有較強的電場。這些電場較強的區域(如第2C圖靜電荷e對應的虛線區域)具有較高的機率發生光罩崩角、圖形炸裂、鉻遷移(Cr migriation)、霧化(haze)等問題,使得不想要的圖案被曝光顯影在晶圓上,從而造成元件的短路或斷路。In today's lithography process, a photomask is required. However, static electricity will accumulate on the photomask during the use of the photomask. If too much static electricity accumulates on the photomask, electrostatic discharge (ESD) may be caused on the photomask pattern, thereby destroying the exposed pattern. For example, in the current photomask, the end of the photomask pattern and adjacent to the metal wire will have a strong electric field due to the accumulation of static charge. These areas with a strong electric field (such as the dotted area corresponding to the static charge e in Figure 2C) have a higher probability of mask chipping, pattern bursting, chromium migration (Cr migriation), haze, etc., making it undesirable The desired pattern is exposed and developed on the wafer, resulting in short circuit or open circuit of the device.
本揭露係關於一種防靜電光罩,包括基板與形成在基板上的圖案化罩幕層。圖案化罩幕層包括導電帶及導電條,導電帶包括一端部,導電條包括獨立端部,其中導電帶之端部與導電條連接。The disclosure relates to an anti-static photomask, which includes a substrate and a patterned mask layer formed on the substrate. The patterned mask layer includes a conductive tape and a conductive strip, the conductive tape includes one end, the conductive strip includes an independent end, and the end of the conductive tape is connected to the conductive strip.
在本揭露一些實施例所述的防靜電光罩中,其中導電條更包括連接端部,且導電條係以連接端部與導電帶之端部連接。獨立端部的寬度大於連接端部的寬度。在另一些實施例中,導電條更包括另一獨立端部。圖案化罩幕層更包括另一條導電帶,包括端部,並與導電條連接。導電條更包括另一獨立端部。In the antistatic photomask according to some embodiments of the present disclosure, the conductive strip further includes a connecting end, and the conductive strip is connected to the end of the conductive tape by the connecting end. The width of the independent end is greater than the width of the connected end. In other embodiments, the conductive strip further includes another independent end. The patterned mask layer further includes another conductive strip, including an end, and is connected to the conductive strip. The conductive strip further includes another independent end.
在一些實施例中,圖案化罩幕層更包括另一導電條,包括獨立端部及連接端部,另一導電條之連接端部與第一導電帶之端部連接。導電帶之寬度大於導電條之寬度。導電帶之寬度大於導電條寬度的2倍。圖案化罩幕層更包括另一導電條,與前述導電條大致平行並間隔一間距。In some embodiments, the patterned mask layer further includes another conductive strip including an independent end and a connecting end, and the connecting end of the other conductive strip is connected to the end of the first conductive strip. The width of the conductive strip is greater than the width of the conductive strip. The width of the conductive strip is greater than twice the width of the conductive strip. The patterned mask layer further includes another conductive strip, which is substantially parallel to the aforementioned conductive strip and separated by a distance.
以下公開許多不同的實施方法或是例子來實行所提供之標的之不同特徵。當然這些實施例僅用以例示,且不該以此限定本揭露的範圍。此外,在不同實施例中可能使用重複的標號或標示,這些重複僅為了簡單清楚地敘述本揭露,不代表所討論的不同實施例及/或結構之間有特定的關係。Many different implementation methods or examples are disclosed below to implement different features of the provided target. Of course, these embodiments are only for illustration, and should not be used to limit the scope of the disclosure. In addition, repeated reference signs or labels may be used in different embodiments, and these repetitions are only used to describe the disclosure simply and clearly, and do not represent a specific relationship between the different embodiments and/or structures discussed.
請參考第1圖,其係根據本揭露一些實施例繪示之光罩1(防靜電光罩)的示意圖。光罩1包括基板10、形成在基板10上的圖案化罩幕層20、框架30、薄膜40、及連接基板10與框架30的連接材料50。基板10可為任何合適的的光罩基板。圖案化罩幕層20、框架30可由金屬材料(例如MoSi、Cr等)所形成,並且可以藉由合適的製程而形成在基板10之上。薄膜40係用以防止外界之灰塵等進入光罩1中,從而可保護其他元件(例如基板10、圖案化罩幕層20、及框架30)。連接材料50係用以連接基板10與框架30,並且可包括各種適當的膠材。Please refer to FIG. 1, which is a schematic diagram of the photomask 1 (anti-static photomask) according to some embodiments of the disclosure. The
接著,請參考第2A圖,其為本揭露一些實施例之圖案化罩幕層20A一部分的俯視圖。在第2A圖中,圖案化罩幕層20A主要包括以相同或相似的材料所形成的導電帶22及導電條24A。導電帶22係為光罩1的主要圖案(main pattern)的一部分,且導電帶22包括端部221,端部221與導電條24A的連接端部242A電性且物理性連接。導電條24A的另外一端稱作獨立端部241A。Next, please refer to FIG. 2A, which is a top view of a portion of the patterned
應注意的是,本文所指之「獨立端部」係代表不與其他導電結構(例如導電帶22、框架30或其他導電結構)物理性連接的端部。此外,雖然導電帶22與導電條24A係分開繪示,然而其可藉由相同的製程同時形成。It should be noted that the "independent end" referred to herein refers to an end that is not physically connected to other conductive structures (such as the
在本實施例中,導電帶22以及導電條24A的尺寸與圖案化時所使用的光源波長(λ)以及數值孔徑(Numerical aperture,NA)有關。舉例來說,可將導電條24A的寬度D2設計為小於λ/NA(D2<λ/NA),而將導電帶22的寬度D1設計為大於兩倍的導電條24A的寬度D2(D1>2*D2)。因此,藉由這種方式,可允許在使用光罩1進行曝光時,在光阻上對應於寬度較小的導電條24A處不會產生對應的圖案,僅有對應於寬度較大的導電帶22處會形成對應的圖案。換句話說,導電條24A為不成像的輔助線(assist feature)。此外,可將導電條24A的長度L設計為大於等於兩倍的寬度D2(L≧2*D2),以達成更佳的成像效果。In this embodiment, the size of the
此外,藉由將導電帶22的端部221與導電條24A電性連接,可將圖案化罩幕層20A的靜電荷e引導至不成像的導電條24A的獨立端部241A上,以避免圖案化罩幕層的主要圖案的端點(即導電帶22的端部221處)發生光罩崩角、圖形炸裂、鉻遷移、霧化等問題,進而降低靜電荷e對曝光後光阻上圖案的影響。亦即,就算靜電荷e累積在導電條24A的獨立端部241A上並造成靜電放電,由於導電條24A之寬度並不足以成像,因此在光阻上對應於導電條24A處不會形成對應的圖案,所以此靜電放電並不會損壞光阻上的對應圖案。In addition, by electrically connecting the
舉例來說,請參考第2B圖及第2C圖,其分別是一部份前述圖案化罩幕層20A以及另一實施例中之圖案化罩幕層20B及其對應圖案的示意圖,其中可使用圖案化罩幕層20A以及圖案化罩幕層20B分別形成對應的圖案26A以及圖案26B。應注意的是,在第2B圖及第2C圖中,靜電荷e係分別累積於獨立端部241A及端部221處。換句話說,藉由在導電帶22上的端部上設置導電條24A,可將累積於端部221上的靜電荷e(第2C圖)引導至不成像的獨立端部241A(第2B圖)。因此即使在獨立端部241A處因為靜電荷e累積而造成靜電放電,由於導電條24並不成像,所以即便在獨立端部241A處發生光罩崩角、圖形炸裂、鉻遷移、霧化等問題,亦不會於曝光時形成對應的圖案,因此可避免因靜電放電而在光阻上對應主要圖形的端點處產生不想要的圖案(例如防止在第2C圖的圖案化罩幕層20B的端點221處在曝光時於光阻上靜電荷e放電處產生圖形炸裂的情形),以增加使用光罩1所進行之微影製程的良率,並且還可延長光罩1的使用壽命,從而降低成本。此外,由於導電條24A係與導電帶22的端部221連接,而非連接到端部221以外的其他處,因此不會干擾使用光罩1後所形成圖案的線寬。此外,由於導電條24A亦具有解析輔助的特性,因此圖案26A的形狀會比圖案26B的形狀更接近導電帶22的形狀(原始圖形)。For example, please refer to Figure 2B and Figure 2C, which are a part of the patterned
應注意的是,雖然上述導電帶22及導電條24A係繪示為大致上朝向相同的方向延伸,然而本揭露並不以此為限。舉例來說,在一些實施例中,導電帶22及導電條間的夾角可為小於180度的角度θ。在另一些實施例中,導電帶22可位在XY平面上(即平行基板10的平面),而導電條可朝向位在XY平面上以外的其他任何方向(例如垂直基板10的Z方向)延伸。這種配置方式亦允許靜電荷e被引導至導電條的獨立端部上,因此亦可防止靜電放電對光罩1及其對應圖案的損害,並且還可增加設計上的彈性。It should be noted that although the above-mentioned
請參考第3A圖及第3B圖,其係本揭露一些實施例之圖案化罩幕層20C的示意圖。在本實施例中,單一條導電帶22的端部221與兩條導電條24B的連接端部242互相連接。亦即,一條導電帶22可對應於兩條導電條24B,然而本揭露並不以此為限,只要設計允許,亦可使一條導電帶22對應於兩條以上的導電條24B。在本實施例中,靜電荷e亦會被引導至導電條24B的獨立端部241B處,而可避免靜電放電對光罩1及其對應圖案的產生損害。Please refer to FIG. 3A and FIG. 3B, which are schematic diagrams of the patterned
值得一提的是,在本實施例中,通過將單一條導電帶22的端部221上與多個導電條的連接端部互相連接,可使所形成的對應圖案26C更接近導電帶的形狀,相較於第2B圖或第2C圖的實施例而言,可進一步避免形成的對應圖案失真(例如減緩對應圖案產生圓角的情形)。在一些實施例中,如第3A圖所示,連接於單一條導電帶22的兩條導電條24B的側邊25皆分別切齊導電帶22的側邊23。It is worth mentioning that in this embodiment, by connecting the
請參考第4A圖至第4C圖,其係本揭露一些實施例之圖案化罩幕層20D以及20E的示意圖。首先,在第4A圖至第4B圖中,導電條24C係以側邊243A與導電帶22的端部221互相連接,並非以前述實施例之連接端部與導電帶22連接,且導電條24C亦具有獨立端部241C。在本實施例中,靜電荷e亦會被引導至兩個獨立端部241C上,而可避免靜電放電對光罩1及其對應圖案的產生損害。另外,本實施例中,通過將導電帶22的端點與導電條24C的側邊243A連接,可使所形成的對應圖案26D的形狀更接近導電帶22的形狀,相較於第2B圖或第2C圖的實施例而言,可進一步避免形成的對應圖案失真(例如減緩對應圖案產生圓角的情形)。Please refer to FIGS. 4A to 4C, which are schematic diagrams of the patterned
由於在本實施例中的導電條並非以端部與導電帶22連接,因此允許將多條導電帶22接在一條導電條上。舉例來說,請參考第4C圖,其中圖案化罩幕層20E的導電條24D可由側邊243B與一條以上之導電帶22的端部221連接(第4C圖繪示連接三條導電帶22,然而本揭露並不以此為限),且導電條24D亦具有獨立端部241D。本實施例中,多個導電帶22的靜電荷e亦會被引導至導電條24D的兩個獨立端部241D上,而可避免靜電放電對光罩1及其對應圖案的產生損害。另外,藉由這種設計方式,導電條24D可將多條導電帶22互相串聯,以降低各條導電帶22間的電位差以及靜電荷的累積,達到類似接地的效果。Since the conductive strips in this embodiment are not connected with the
接著,請參考第5-7圖,其係以各種不同的圖案化罩幕層進行成像時的電荷分布圖,其中導電條22旁不同的顏色代表不同的靜電荷密度。在第5圖中,並未設置不成像之導電條,而各導電帶22間彼此間隔一距離。在這種狀況中,電荷密度較高的部分會集中在導電帶22的端部,並且在由於各導電帶22並未電性連接,故其電位亦會有差異,使得各導電帶22上的電荷密度不均勻,從而將導致靜電放電以及所得圖案失真的問題。Next, please refer to Figs. 5-7, which are charge distribution diagrams when imaging with various patterned mask layers. The different colors beside the
在第6圖中,各個導電帶22係以導電條24E互相連接。藉由這種方式,可使各個導電帶22電性導通,從而使各個導電帶22具有相同的電位,並分散靜電荷。然而,由於在這種狀況下之導電條24E並非連接到導電帶22的端部,因此仍無法改善在主要圖案(如導電帶22)端部處靜電荷累積的現象,因此該處仍可能會有靜電放電以及所得圖案失真的問題。In Figure 6, the
如本揭露一些實施例所述,在第7圖中,此圖案化罩幕層的導電帶22的一端係以導電條24F彼此連接。因此,和第5圖的狀態相比,設置導電條24F將各導電帶22互相電性連接可達成分散靜電荷的功效,以降低各條導電帶22間的電位差以及靜電荷的累積,達到類似接地的效果。和第6圖的狀況相比,由於導電條24F係設置在導電帶22的端部,可進一步將靜電荷引導至不成像的導電條24F的端部,從而可避免在導電帶22的端部產生的靜電放電而對其對應圖案及光罩1所造成的損害。As described in some embodiments of the present disclosure, in Figure 7, one end of the
此外,在第7圖中,藉由設置另一條導電條24G,可改變圖案化罩幕層的電場,從而進一步改善使用光罩1之後所形成的圖案的形狀,進而達成輔助解析的效果。In addition, in Figure 7, by providing another
由於本揭露的導電條的其中一端為不與其他導電結構(例如導電帶22或框架30)連接的獨立端部,因此本揭露的導電條不須與框架30連接。因此在一些實施例中亦允許省略光罩1的框架30,可進一步降低光罩1的成本。Since one end of the conductive strip of the present disclosure is an independent end that is not connected to other conductive structures (such as the
綜上所述,本揭露提供了一種在圖案化罩幕層上額外設置與主要圖案(例如導電帶)電性連接的不成像導電條的光罩,且導電條具有不與其他導電結構電性連接的獨立端部。藉由設置這種導電條,可避免因主要圖形端點上的靜電荷累績所導致對應圖案炸裂的問題。此外根據本揭露方式所設置的導電條,還可使此光罩形成的對應圖案更加接近所欲成像的圖案。In summary, the present disclosure provides a photomask with non-imaging conductive strips electrically connected to the main pattern (such as conductive tape) is additionally provided on the patterned mask layer, and the conductive strips are not electrically connected to other conductive structures. Independent end of the connection. By arranging such conductive strips, the problem of corresponding pattern burst caused by the accumulation of static charges on the end of the main pattern can be avoided. In addition, the conductive strips provided according to the present disclosure can also make the corresponding pattern formed by the photomask closer to the desired pattern.
雖然本揭露的實施例及其優點已揭露如上,但應該瞭解的是,任何所屬技術領域中具有通常知識者,在不脫離本揭露之精神和範圍內,當可作更動、替代與潤飾。另外,每一申請專利範圍構成個別的實施例,且本揭露之保護範圍也包括各個申請專利範圍及實施例的組合。Although the embodiments of the present disclosure and their advantages have been disclosed above, it should be understood that any person with ordinary knowledge in the relevant technical field can make changes, substitutions and modifications without departing from the spirit and scope of the present disclosure. In addition, each patent application scope constitutes an individual embodiment, and the protection scope of the present disclosure also includes each patent application scope and a combination of embodiments.
1:光罩
10:基板
20、20A、20B、20C、20D、20E:圖案化罩幕層
22:導電帶
221:端部
23、25、243A、243B:側邊
24A、24B、24C、24D、24E、24F、24G:導電條
241A、241B、241C、241D:獨立端部
242A、242B:連接端部
26A、26B、26C、26D、26E:圖案
30:框架
40:薄膜
50:連接材料
D1、D2:寬度
e:靜電荷
L:長度
1: Mask
10:
以下將配合所附圖式詳述本揭露之實施例。應注意的是,實施例的各種特徵並未按照比例繪示且僅用以說明例示。事實上,可任意地放大或縮小元件的尺寸,以清楚地表現出本揭露的特徵。 第1圖係根據本揭露一些實施例繪示之光罩的示意圖。 第2A圖至第2B圖係本揭露一些實施例之圖案化罩幕層及其對應圖案的示意圖。 第2C圖係一實施例之圖案化罩幕層及其對應圖案的示意圖。 第3A圖至第3B圖係本揭露一些實施例之圖案化罩幕層及其對應圖案的示意圖。 第4A圖至第4B圖係本揭露一些實施例之圖案化罩幕層及其對應圖案的示意圖。 第4C圖係本揭露一些實施例之圖案化罩幕層及其對應圖案的示意圖。 第5圖至第7圖係一些實施例之以圖案化罩幕層進行成像時的電荷分布圖。 The embodiments of the disclosure will be described in detail below in conjunction with the accompanying drawings. It should be noted that the various features of the embodiments are not drawn to scale and are only used for illustrative purposes. In fact, the size of the element can be arbitrarily enlarged or reduced to clearly show the features of the present disclosure. FIG. 1 is a schematic diagram of a photomask drawn according to some embodiments of the disclosure. 2A to 2B are schematic diagrams of the patterned mask layer and its corresponding patterns of some embodiments of the present disclosure. FIG. 2C is a schematic diagram of the patterned mask layer and its corresponding pattern in an embodiment. 3A to 3B are schematic diagrams of the patterned mask layer and corresponding patterns of some embodiments of the present disclosure. 4A to 4B are schematic diagrams of the patterned mask layer and its corresponding patterns in some embodiments of the present disclosure. FIG. 4C is a schematic diagram of the patterned mask layer and its corresponding patterns in some embodiments of the present disclosure. Figures 5 to 7 are diagrams of charge distribution during imaging with a patterned mask layer in some embodiments.
20A:圖案化罩幕層 20A: Patterned mask layer
22:導電帶 22: Conductive tape
221:端部 221: End
24A:導電條 24A: Conductive strip
241A:獨立端部 241A: Independent end
242A:連接端部 242A: connecting end
D1、D2:寬度 D1, D2: width
e:靜電荷 e: electrostatic charge
L:長度 L: length
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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TW108104551A TWI699613B (en) | 2019-02-12 | 2019-02-12 | Anti-static photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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TW108104551A TWI699613B (en) | 2019-02-12 | 2019-02-12 | Anti-static photomask |
Publications (2)
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TWI699613B true TWI699613B (en) | 2020-07-21 |
TW202030546A TW202030546A (en) | 2020-08-16 |
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TW108104551A TWI699613B (en) | 2019-02-12 | 2019-02-12 | Anti-static photomask |
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Citations (7)
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TW503553B (en) * | 2001-06-27 | 2002-09-21 | Taiwan Semiconductor Mfg | Mask case and mask structure with active anti-ESD function |
CN1372321A (en) * | 2001-02-27 | 2002-10-02 | 矽统科技股份有限公司 | Anti-electrostatic optical cover |
TW509977B (en) * | 2001-10-02 | 2002-11-11 | Taiwan Semiconductor Mfg | Manufacturing method of anti-static-charge |
US6736386B1 (en) * | 2001-04-10 | 2004-05-18 | Dupont Photomasks, Inc. | Covered photomask holder and method of using the same |
CN201607608U (en) * | 2010-01-20 | 2010-10-13 | 深圳市路维电子有限公司 | Anti-static light shield |
CN106842812A (en) * | 2017-02-27 | 2017-06-13 | 深圳市路维光电股份有限公司 | Antistatic mask plate former material, antistatic mask plate and preparation method thereof |
CN108107671A (en) * | 2016-11-25 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of anti-static light shield |
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2019
- 2019-02-12 TW TW108104551A patent/TWI699613B/en active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1372321A (en) * | 2001-02-27 | 2002-10-02 | 矽统科技股份有限公司 | Anti-electrostatic optical cover |
US6736386B1 (en) * | 2001-04-10 | 2004-05-18 | Dupont Photomasks, Inc. | Covered photomask holder and method of using the same |
TW503553B (en) * | 2001-06-27 | 2002-09-21 | Taiwan Semiconductor Mfg | Mask case and mask structure with active anti-ESD function |
TW509977B (en) * | 2001-10-02 | 2002-11-11 | Taiwan Semiconductor Mfg | Manufacturing method of anti-static-charge |
CN201607608U (en) * | 2010-01-20 | 2010-10-13 | 深圳市路维电子有限公司 | Anti-static light shield |
CN108107671A (en) * | 2016-11-25 | 2018-06-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of anti-static light shield |
CN106842812A (en) * | 2017-02-27 | 2017-06-13 | 深圳市路维光电股份有限公司 | Antistatic mask plate former material, antistatic mask plate and preparation method thereof |
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TW202030546A (en) | 2020-08-16 |
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