TWI697406B - Release sheet for compression molding of a semiconductor, and semiconductor package molded using the same - Google Patents

Release sheet for compression molding of a semiconductor, and semiconductor package molded using the same Download PDF

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TWI697406B
TWI697406B TW105115782A TW105115782A TWI697406B TW I697406 B TWI697406 B TW I697406B TW 105115782 A TW105115782 A TW 105115782A TW 105115782 A TW105115782 A TW 105115782A TW I697406 B TWI697406 B TW I697406B
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particles
release layer
release sheet
layer
semiconductor
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TW105115782A
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TW201741142A (en
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鈴木雅彦
田村遼
池谷卓二
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日商日立化成股份有限公司
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Abstract

A release sheet for compression molding of a semiconductor includes a release layer containing a particle and a base material layer, wherein a content ratio of the particle in the release layer is from 5 to 65% by volume.

Description

半導體壓縮成型用脫模片和使用其成型的半導體封裝Release sheet for semiconductor compression molding and semiconductor package molded using the mold release sheet

本發明是有關於一種半導體壓縮成型用脫模片和使用其成型的半導體封裝。The present invention relates to a release sheet for semiconductor compression molding and a semiconductor package molded using the mold release sheet.

半導體晶片通常藉由用以遮斷外部氣體及進行保護的樹脂進行密封,製成被稱為「封裝(package)」的成形品而安裝於基板上。於先前,成形品是成形為經由作為密封樹脂的流路的流道(runner)而連結的每一個晶片的封裝成形品。在這種情況下,藉由模具的結構、於密封樹脂中添加脫模劑等,獲得成形品自模具的脫模性。 另一方面,根據封裝的小型化、多接腳化等的要求,球柵陣列(Ball Grid Array,BGA)方式、四方形扁平無引腳(Quad Flat Non-leaded,QFN)方式、晶圓級晶片尺寸封裝(Wafer Level Chip Size Package,WL-CSP)方式等封裝不斷增加。在QFN方式中,為了確保支座(standoff)及防止在端子部產生密封材料毛邊,而且在BGA方式及WL-CSP方式中,為了提高封裝自模具脫模的脫模性,使用樹脂製脫模膜(例如參照日本專利特開2002-158242號公報)。將如上所述地使用脫模膜的成型方法稱為「膜輔助成型」。The semiconductor chip is usually sealed with a resin to block external air and protect it to form a molded product called a "package" and mounted on a substrate. Previously, the molded product was a package molded product molded into each wafer connected via a runner as a flow path of the sealing resin. In this case, by the structure of the mold, the mold release agent is added to the sealing resin, etc., the mold release property of the molded product from the mold is obtained. On the other hand, according to the requirements of miniaturization and multi-pin packaging, the Ball Grid Array (BGA) method, the Quad Flat Non-leaded (QFN) method, and the wafer level Packages such as the Wafer Level Chip Size Package (WL-CSP) method are increasing. In the QFN method, in order to ensure the standoff and prevent the generation of burrs of the sealing material in the terminal part, and in the BGA method and WL-CSP method, in order to improve the releasability of the package from the mold, resin release is used Film (for example, refer to Japanese Patent Laid-Open No. 2002-158242). The molding method using the release film as described above is referred to as "film assisted molding".

[發明所欲解決之課題] 若使用所述脫模膜,則於樹脂成型半導體封裝時,可使半導體封裝的密封材料與模具容易地脫模。然而,所成型的封裝表面外觀不均一且發現密封材料的流動痕跡,存在於由脫模膜所成型的半導體封裝表面產生污染的可能性。 而且,在BGA方式及WL-CSP方式中,隨著成形方法自先前的轉移模具(transfer mold)方式變更為壓縮模具方式,一次噴射(shot)的大尺寸化不斷發展,所成形的封裝表面外觀的均一性、密封材料的流動痕跡等的要求水準變高。[Problem to be Solved by the Invention] If the mold release film is used, when the semiconductor package is resin molded, the sealing material and the mold of the semiconductor package can be easily released. However, the appearance of the molded package surface is uneven and traces of flow of the sealing material are found, which may cause contamination on the surface of the semiconductor package molded by the release film. Moreover, in the BGA method and the WL-CSP method, as the molding method is changed from the previous transfer mold method to the compression mold method, the size of one shot is continuously increasing, and the appearance of the molded package surface The requirements for uniformity, flow marks of sealing materials, etc. have become higher.

藉由本發明的一實施方式而提供具有如下性質的半導體壓縮成型用脫模片:在藉由壓縮模具方式而樹脂成型半導體封裝時,可並不對半導體封裝造成損傷地使密封材料與模具容易地脫模,所成型的半導體封裝表面外觀的均一性優異,且可減低自脫模片向所成型的半導體封裝表面的污染。而且,藉由本發明的其他實施方式而提供使用該半導體壓縮成型用脫模片而成型的半導體封裝。 [解決課題之手段]According to one embodiment of the present invention, there is provided a release sheet for semiconductor compression molding having the following properties: when a semiconductor package is resin molded by a compression mold method, the sealing material and the mold can be easily removed without causing damage to the semiconductor package With the mold, the surface appearance of the molded semiconductor package is excellent, and the contamination from the mold release sheet to the surface of the molded semiconductor package can be reduced. Moreover, according to another embodiment of the present invention, a semiconductor package molded using the release sheet for semiconductor compression molding is provided. [Means to solve the problem]

本發明包含下述實施方式。 <1> 一種半導體壓縮成型用脫模片,其包括含有粒子的脫模層、 基材層, 所述脫模層中的所述粒子的含有率為5體積%~65體積%。 <2> 如<1>所述的半導體壓縮成型用脫模片,其中,所述粒子的平均粒徑為1 μm~55 μm。 <3> 如<1>或<2>所述的半導體壓縮成型用脫模片,其中,所述粒子為樹脂粒子。 <4> 如<3>所述的半導體壓縮成型用脫模片,其中,所述樹脂粒子包含選自由丙烯酸樹脂、聚烯烴樹脂、聚苯乙烯樹脂、聚丙烯腈樹脂及矽酮樹脂所組成的群組中的至少一種。 <5> 如<1>~<4>中任一項所述的半導體壓縮成型用脫模片,所述基材層為聚酯膜。 <6> 一種半導體封裝,其是使用如<1>~<5>中任一項所述的半導體壓縮成型用脫模片而成型者。 [發明的效果]The present invention includes the following embodiments. <1> A release sheet for semiconductor compression molding, which includes a release layer containing particles and a substrate layer, and the content of the particles in the release layer is 5 to 65% by volume. <2> The release sheet for semiconductor compression molding according to <1>, wherein the average particle diameter of the particles is 1 μm to 55 μm. <3> The release sheet for semiconductor compression molding according to <1> or <2>, wherein the particles are resin particles. <4> The release sheet for semiconductor compression molding according to <3>, wherein the resin particles include those selected from acrylic resin, polyolefin resin, polystyrene resin, polyacrylonitrile resin, and silicone resin At least one of the group. <5> The release sheet for semiconductor compression molding according to any one of <1> to <4>, wherein the base layer is a polyester film. <6> A semiconductor package molded using the release sheet for semiconductor compression molding according to any one of <1> to <5>. [Effects of the invention]

藉由本發明的一實施方式而提供具有如下性質的半導體壓縮成型用脫模片:在藉由壓縮成型而成型半導體封裝時,可並不對半導體封裝造成損傷地使密封材料與模具容易地脫模,所成型的半導體封裝表面外觀的均一性優異,且可減低自脫模片向所成型的半導體封裝表面的污染。而且,藉由本發明的其他實施方式而提供使用該半導體壓縮成型用脫模片而成型的半導體封裝。According to an embodiment of the present invention, there is provided a release sheet for semiconductor compression molding having the following properties: when a semiconductor package is molded by compression molding, the sealing material and the mold can be easily released without causing damage to the semiconductor package, The surface appearance uniformity of the molded semiconductor package is excellent, and contamination from the mold release sheet to the surface of the molded semiconductor package can be reduced. Moreover, according to another embodiment of the present invention, a semiconductor package molded using the release sheet for semiconductor compression molding is provided.

以下,關於本發明的實施方式加以詳細說明。其中,本發明並不限定於以下實施方式。 在本說明書中使用「~」所表示的數值範圍表示分別包含「~」之前後所記載的數值而作為最小值及最大值的範圍。 作為在本說明書中組成物中的各成分的量,在組成物中存在多種相當於各成分的物質的情況下,若無特別說明,則是指在組成物中所存在的該多種物質的合計量。 在本說明書中,所謂「步驟」不僅僅是獨立的步驟,即使在無法與其他步驟明確地區別的情況下,若可達成該步驟的所期望的作用,則亦包含於本術語中。 在本說明書中,所謂「層」及「膜」,在以平面圖的形式觀察時,除了形成於整個面的形狀的構成以外,亦包含形成於一部分的形狀的構成。 在本說明書中,所謂「(甲基)丙烯酸」是指「丙烯酸」及「甲基丙烯酸」的至少一者,所謂「(甲基)丙烯酸酯」是指「丙烯酸酯」及「甲基丙烯酸酯」的至少一者。 而且,在本說明書中階段性記載的數值範圍中,在一個數值範圍中所記載的上限值或下限值亦可置換為其他階段性記載的數值範圍的上限值或下限值。而且,在本說明書中所記載的數值範圍中,該數值範圍的上限值或下限值亦可置換為實施例中所示的值。Hereinafter, the embodiments of the present invention will be described in detail. However, the present invention is not limited to the following embodiments. In this specification, the numerical range indicated by "~" means a range that includes the numerical values described before and after "~" as the minimum and maximum values. As the amount of each component in the composition in this specification, when there are multiple substances corresponding to each component in the composition, unless otherwise specified, it means the total of the multiple substances present in the composition the amount. In this specification, the so-called "step" is not only an independent step, and even if it cannot be clearly distinguished from other steps, if the desired effect of the step can be achieved, it is included in this term. In this specification, the term "layer" and "membrane", when viewed in a plan view, includes not only the configuration formed on the entire surface but also the configuration formed on a part of the shape. In this specification, "(meth)acrylic acid" refers to at least one of "acrylic acid" and "methacrylic acid", and "(meth)acrylate" refers to "acrylate" and "methacrylate" At least one of. In addition, in the numerical ranges described stepwise in this specification, the upper limit or lower limit described in one numerical range may be replaced with the upper limit or lower limit of another numerical range described stepwise. In addition, in the numerical range described in this specification, the upper limit or lower limit of the numerical range may be replaced with the value shown in the examples.

在本說明書中,層或膜的平均厚度(亦稱為「厚度的平均值」)是測定成為對象的層或膜的5點的厚度,作為其算術平均值而提供的值。 層或膜的厚度可使用測微計(micrometer)等而測定。在可直接測定層或膜的厚度的情況下,使用測微計而進行測定。另一方面,在測定一個層的厚度或多個層的總厚度的情況下,亦可藉由使用電子顯微鏡,觀察脫模片的剖面而進行測定。In this specification, the average thickness of a layer or film (also referred to as an "average thickness") is a value provided as an arithmetic average value of the thickness of the target layer or film at five points. The thickness of the layer or film can be measured using a micrometer or the like. When the thickness of the layer or the film can be directly measured, it is measured using a micrometer. On the other hand, in the case of measuring the thickness of one layer or the total thickness of a plurality of layers, it can also be measured by observing the cross section of the release sheet using an electron microscope.

在本說明書中,「平均粒徑」是在利用雷射繞射散射式粒度分佈測定法的體積累積的粒度分佈曲線中,作為自小粒徑側起的累積成為50%的粒徑(50%D)而求出。例如可使用利用雷射光散射法的粒徑分佈測定裝置(例如島津製作所股份有限公司、「SALD-3000」)而進行測定。In this specification, the "average particle size" is the particle size distribution curve of the volume accumulation by the laser diffraction scattering particle size distribution measurement method, as the cumulative 50% particle size from the side of the small particle size (50% D) and find out. For example, a particle size distribution measuring device (for example, Shimadzu Corporation, "SALD-3000") using a laser light scattering method can be used for measurement.

<半導體壓縮成型用脫模片> 半導體壓縮成型用脫模片(以下亦稱為「脫模片」)是包含含有粒子的脫模層、基材層,脫模層中的粒子的含有率為5體積%~65體積%的半導體壓縮成型用脫模片。 更詳細而言,脫模片具有2層結構,該2層結構是於與半導體封裝的樹脂成型中所使用的與模具接觸的基材層的單面上、具備與所成型的半導體封裝接觸的脫模層。<Release sheet for semiconductor compression molding> The release sheet for semiconductor compression molding (hereinafter also referred to as "release sheet") contains a release layer containing particles and a substrate layer. The content of particles in the release layer is A release sheet for semiconductor compression molding of 5 vol% to 65 vol%. In more detail, the release sheet has a two-layer structure. The two-layer structure is provided on one side of the substrate layer that is in contact with the mold used in the resin molding of the semiconductor package, and is provided with a mold that contacts the molded semiconductor package. Release layer.

作為脫模片,藉由採用所述構成,在藉由壓縮成型而成型半導體封裝時,可並不對半導體封裝造成損傷地使密封材料與模具容易地脫模,可使所成型的半導體封裝表面外觀的均一性提高,且可減低自脫模片向所成型的半導體封裝表面的污染。 其理由尚不明確,但可如下所述地推測。 在成型半導體封裝時使用先前的脫模片的情況下,自抑制在所成型的半導體封裝中產生皺褶等形狀不良的觀點考慮,要求脫模片具有可充分吻合成型用模具之形狀的追隨性。另外,若在自成型用模具取出半導體封裝時施加過剩的力,則半導體封裝容易破損,因此亦要求脫模片對於半導體封裝具有充分的脫模性。 本說明書的脫模片包含具有不同功能的兩種層,亦即包含對於半導體封裝用的密封樹脂(例如環氧樹脂)的脫模性優異的脫模層及對於成型用模具的追隨性優異的基材層,因此推測可維持對於成型用模具的追隨性,並且使自所成型的半導體封裝的脫模性提高。 另外,在本說明書的脫模片中,由於脫模層以特定的含有率含有粒子,因此脫模層的外表面(與半導體封裝對向的面)變粗糙,所成型的半導體封裝的表面變粗糙,因此推測可減低密封材料的流動痕跡,使封裝表面外觀的均一性提高。而且,可容易地選擇粒子的粒徑、形狀等,調整脫模層的外表面的粗糙度的不均的程度變容易。另外,在粒子為樹脂粒子的情況下,樹脂粒子與脫模層中所含的其他成分的密接性優異,因此推測難以自脫模層脫落,可抑制半導體封裝的污染。As the release sheet, by adopting the above-mentioned structure, when the semiconductor package is molded by compression molding, the sealing material and the mold can be easily released without causing damage to the semiconductor package, and the surface appearance of the molded semiconductor package can be improved The uniformity is improved, and the contamination from the mold release sheet to the surface of the molded semiconductor package can be reduced. The reason is not clear, but it can be estimated as follows. In the case of using the conventional release sheet when molding a semiconductor package, from the viewpoint of suppressing shape defects such as wrinkles in the molded semiconductor package, the release sheet is required to have a followability that can fully conform to the shape of the mold for molding . In addition, if excessive force is applied when taking out the semiconductor package from the mold for molding, the semiconductor package is easily damaged. Therefore, the mold release sheet is also required to have sufficient mold releasability for the semiconductor package. The release sheet in this specification includes two layers with different functions, that is, a release layer that has excellent release properties for sealing resins for semiconductor encapsulation (for example, epoxy resin), and a release layer that has excellent followability to molds for molding. Therefore, it is estimated that the substrate layer can maintain the followability to the molding die and improve the releasability from the molded semiconductor package. In addition, in the release sheet of this specification, since the release layer contains particles at a specific content rate, the outer surface of the release layer (the surface facing the semiconductor package) becomes rough, and the surface of the molded semiconductor package becomes rough. It is rough, so it is estimated that the flow marks of the sealing material can be reduced, and the uniformity of the package surface appearance can be improved. Furthermore, the particle diameter, shape, etc. of the particles can be easily selected, and it is easy to adjust the degree of unevenness in the roughness of the outer surface of the release layer. In addition, when the particles are resin particles, the resin particles have excellent adhesion to other components contained in the release layer, and therefore it is estimated that they are unlikely to fall off from the release layer, and contamination of the semiconductor package can be suppressed.

[含有粒子的脫模層] 脫模片包含含有粒子的脫模層(以下亦稱為「特定脫模層」),特定脫模層中的粒子的含有率為5體積%~65體積%。[Particle-containing mold release layer] The mold release sheet includes a particle-containing mold release layer (hereinafter also referred to as a "specific mold release layer"), and the content of particles in the specific mold release layer is 5 vol% to 65% by volume.

(粒子) 脫模層中所含的粒子的種類並無特別限定,可為無機粒子及有機粒子的任意者。作為無機粒子的材質,可列舉:氧化鋁、氫氧化鋁、氮化硼、氧化矽、石墨等。作為有機粒子,可列舉樹脂粒子。 自使與脫模層中所含的其他成分的密接性提高的觀點考慮,粒子較佳為樹脂粒子。在粒子為樹脂粒子的情況下,粒子與脫模層中所含的其他成分的密接性提高,粒子變得難以自脫模層脫落,從而抑制半導體封裝的污染。 樹脂粒子較佳為含有選自由丙烯酸樹脂、聚烯烴樹脂、聚苯乙烯樹脂、聚丙烯腈樹脂及矽酮樹脂所組成的群組中的至少一種。自對於半導體封裝的脫模性的觀點考慮,樹脂粒子更佳為含有選自丙烯酸樹脂、聚苯乙烯樹脂及聚丙烯腈樹脂中的至少一種。 自封裝表面外觀的均一性的觀點考慮,樹脂粒子較佳為在可於脫模層形成用組成物的製備中使用的有機溶劑(例如甲苯、甲基乙基酮、或乙酸乙酯)中為不溶性或難溶性。此處,所謂「在有機溶劑中為不溶性或難溶性」是指在依據JIS K6769(2013)或ISO 15875-2(2003)的凝膠分率試驗中,將樹脂粒子分散於甲苯等有機溶劑中,在50℃下保持24小時後的凝膠分率為97%以上。(Particles) The type of particles contained in the release layer is not particularly limited, and may be any of inorganic particles and organic particles. Examples of materials for inorganic particles include alumina, aluminum hydroxide, boron nitride, silicon oxide, graphite, and the like. Examples of the organic particles include resin particles. From the viewpoint of improving the adhesion with other components contained in the release layer, the particles are preferably resin particles. When the particles are resin particles, the adhesion between the particles and other components contained in the release layer is improved, and the particles become less likely to fall off from the release layer, thereby suppressing contamination of the semiconductor package. The resin particles preferably contain at least one selected from the group consisting of acrylic resin, polyolefin resin, polystyrene resin, polyacrylonitrile resin, and silicone resin. From the viewpoint of the releasability of the semiconductor package, the resin particles more preferably contain at least one selected from acrylic resin, polystyrene resin, and polyacrylonitrile resin. From the viewpoint of the uniformity of the appearance of the package surface, the resin particles are preferably in an organic solvent (for example, toluene, methyl ethyl ketone, or ethyl acetate) that can be used in the preparation of the release layer forming composition Insoluble or poorly soluble. Here, "insoluble or poorly soluble in organic solvents" means that in a gel fraction test based on JIS K6769 (2013) or ISO 15875-2 (2003), resin particles are dispersed in an organic solvent such as toluene , The gel fraction after keeping at 50℃ for 24 hours is over 97%.

作為丙烯酸樹脂的例子,可列舉(甲基)丙烯酸系單量體的(共)聚合物,具體而言可列舉:(甲基)丙烯酸樹脂、(甲基)丙烯酸酯樹脂(例如(甲基)丙烯酸烷基酯樹脂及(甲基)丙烯酸二甲基胺基乙酯樹脂)等。 (甲基)丙烯酸系單量體可列舉:丙烯酸甲酯、甲基丙烯酸甲酯、丙烯酸乙酯、甲基丙烯酸乙酯、丙烯酸正丙酯、甲基丙烯酸正丙酯、丙烯酸異丙酯、甲基丙烯酸異丙酯、丙烯酸正丁酯、甲基丙烯酸正丁酯、丙烯酸異丁酯、甲基丙烯酸異丁酯、丙烯酸第二丁酯、甲基丙烯酸第二丁酯、丙烯酸第三丁酯、甲基丙烯酸第三丁酯、丙烯酸戊酯、甲基丙烯酸戊酯、丙烯酸己酯、甲基丙烯酸己酯、丙烯酸庚酯、甲基丙烯酸庚酯、丙烯酸-2-乙基己酯、甲基丙烯酸-2-乙基己酯、丙烯酸辛酯、甲基丙烯酸辛酯、丙烯酸壬酯、甲基丙烯酸壬酯、丙烯酸癸酯、甲基丙烯酸癸酯、丙烯酸十二烷基酯、甲基丙烯酸十二烷基酯、丙烯酸十四烷基酯、甲基丙烯酸十四烷基酯、丙烯酸十六烷基酯、甲基丙烯酸十六烷基酯、丙烯酸十八烷基酯、甲基丙烯酸十八烷基酯、丙烯酸二十烷基酯、甲基丙烯酸二十烷基酯、丙烯酸二十二烷基酯、甲基丙烯酸二十二烷基酯、丙烯酸環戊酯、甲基丙烯酸環戊酯、丙烯酸環己酯、甲基丙烯酸環己酯、丙烯酸環庚酯、甲基丙烯酸環庚酯、丙烯酸苄酯、甲基丙烯酸苄酯、丙烯酸苯酯、甲基丙烯酸苯酯、丙烯酸甲氧基乙酯、甲基丙烯酸甲氧基乙酯、丙烯酸二甲基胺基乙酯、甲基丙烯酸二甲基胺基乙酯、丙烯酸二乙基胺基乙酯、甲基丙烯酸二乙基胺基乙酯、丙烯酸二甲基胺基丙酯、甲基丙烯酸二甲基胺基丙酯、丙烯酸-2-氯乙酯、甲基丙烯酸-2-氯乙酯、丙烯酸-2-氟乙酯、甲基丙烯酸-2-氟乙酯、苯乙烯、α-甲基苯乙烯、環己基馬來醯亞胺、丙烯酸二環戊酯、甲基丙烯酸二環戊酯、乙烯基甲苯、氯乙烯、乙酸乙烯酯、N-乙烯基吡咯啶酮、丁二烯、異戊二烯、氯丁二烯等。該等可單獨使用或組合使用兩種以上。 作為聚烯烴樹脂,若為烯烴單量體或烯單量體的(共)聚合物,則並無特別限定。具體而言可列舉:聚乙烯、聚丙烯、聚甲基戊烯等。 作為聚苯乙烯樹脂的例子,可列舉苯乙烯或苯乙烯衍生物的(共)聚合物。作為苯乙烯衍生物,可列舉:α-甲基苯乙烯、4-甲基苯乙烯、2-甲基苯乙烯、3-甲基苯乙烯、2-乙基苯乙烯、3-乙基苯乙烯、4-乙基苯乙烯等具有烷基鏈的經烷基取代的苯乙烯,2-氯苯乙烯、3-氯苯乙烯、4-氯苯乙烯等經鹵素取代的苯乙烯,4-氟苯乙烯、2,5-二氟苯乙烯等經氟取代的苯乙烯,乙烯基萘等。 作為聚丙烯腈樹脂的例子,可列舉丙烯腈單量體的(共)聚合物。 自抑制樹脂粒子對於有機溶劑的溶解性的觀點考慮,樹脂粒子中所含的樹脂較佳為交聯樹脂。Examples of acrylic resins include (meth)acrylic monomer (co)polymers, specifically, (meth)acrylic resins, (meth)acrylate resins (for example (meth)) Alkyl acrylate resin and (meth)acrylate dimethylamino ethyl resin) etc. (Meth) acrylic monomers include: methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, n-propyl acrylate, n-propyl methacrylate, isopropyl acrylate, methyl acrylate Isopropyl acrylate, n-butyl acrylate, n-butyl methacrylate, isobutyl acrylate, isobutyl methacrylate, second butyl acrylate, second butyl methacrylate, third butyl acrylate, T-butyl methacrylate, pentyl acrylate, pentyl methacrylate, hexyl acrylate, hexyl methacrylate, heptyl acrylate, heptyl methacrylate, 2-ethylhexyl acrylate, methacrylic acid -2-ethylhexyl, octyl acrylate, octyl methacrylate, nonyl acrylate, nonyl methacrylate, decyl acrylate, decyl methacrylate, dodecyl acrylate, dodecyl methacrylate Alkyl ester, tetradecyl acrylate, tetradecyl methacrylate, cetyl acrylate, cetyl methacrylate, stearyl acrylate, stearyl methacrylate Ester, eicosyl acrylate, eicosyl methacrylate, behenyl acrylate, behenyl methacrylate, cyclopentyl acrylate, cyclopentyl methacrylate, acrylic ring Hexyl ester, cyclohexyl methacrylate, cycloheptyl acrylate, cycloheptyl methacrylate, benzyl acrylate, benzyl methacrylate, phenyl acrylate, phenyl methacrylate, methoxyethyl acrylate, methyl methacrylate Methoxyethyl acrylate, dimethylaminoethyl acrylate, dimethylaminoethyl methacrylate, diethylaminoethyl acrylate, diethylaminoethyl methacrylate, diethylaminoethyl acrylate Methylaminopropyl, dimethylaminopropyl methacrylate, 2-chloroethyl acrylate, 2-chloroethyl methacrylate, 2-fluoroethyl acrylate, 2- methacrylic acid Fluoroethyl, styrene, α-methylstyrene, cyclohexyl maleimide, dicyclopentyl acrylate, dicyclopentyl methacrylate, vinyl toluene, vinyl chloride, vinyl acetate, N-ethylene Pyrrolidone, butadiene, isoprene, chloroprene, etc. These can be used alone or in combination of two or more. The polyolefin resin is not particularly limited as long as it is an olefin monomer or a (co)polymer of an olefin monomer. Specifically, polyethylene, polypropylene, polymethylpentene, etc. can be mentioned. Examples of polystyrene resins include (co)polymers of styrene or styrene derivatives. Examples of styrene derivatives include α-methylstyrene, 4-methylstyrene, 2-methylstyrene, 3-methylstyrene, 2-ethylstyrene, and 3-ethylstyrene , 4-ethylstyrene and other alkyl-substituted styrenes with alkyl chains, 2-chlorostyrene, 3-chlorostyrene, 4-chlorostyrene and other halogen-substituted styrenes, 4-fluorobenzene Fluorine-substituted styrene such as ethylene, 2,5-difluorostyrene, vinyl naphthalene, etc. As an example of the polyacrylonitrile resin, a (co)polymer of acrylonitrile monomer can be cited. From the viewpoint of suppressing the solubility of the resin particles in an organic solvent, the resin contained in the resin particles is preferably a crosslinked resin.

粒子的平均粒徑較佳為1 μm~55 μm。若粒子的平均粒徑為1 μm以上,則存在如下傾向:可於特定脫模層的表面充分地形成凹凸,所成型的半導體封裝表面外觀的均一性得到提高且抑制密封材料的流動痕跡。而且,若粒子的平均粒徑為55 μm以下,則將粒子固定於特定脫模層中,因此無需使特定脫模層的厚度過度增大,於成本的觀點而言較佳。 自半導體封裝表面外觀的觀點考慮,粒子的平均粒徑的上限較佳為55 μm,更佳為50 μm。自成本的觀點考慮,粒子的平均粒徑的下限更佳為3 μm,進而更佳為10 μm。The average particle diameter of the particles is preferably 1 μm to 55 μm. If the average particle size of the particles is 1 μm or more, there is a tendency that the unevenness can be sufficiently formed on the surface of the specific release layer, the uniformity of the surface appearance of the molded semiconductor package is improved, and the flow mark of the sealing material is suppressed. In addition, if the average particle diameter of the particles is 55 μm or less, the particles are fixed in the specific release layer, so there is no need to excessively increase the thickness of the specific release layer, which is preferable from the viewpoint of cost. From the viewpoint of the surface appearance of the semiconductor package, the upper limit of the average particle diameter of the particles is preferably 55 μm, more preferably 50 μm. From the viewpoint of cost, the lower limit of the average particle diameter of the particles is more preferably 3 μm, and still more preferably 10 μm.

特定脫模層中所含的粒子的形狀並無特別限定,可為球形、橢圓形、不定形等的任意者。The shape of the particles contained in the specific release layer is not particularly limited, and may be any of spherical, elliptical, and amorphous shapes.

作為粒子的具體例,可列舉作為丙烯酸樹脂粒子的塔夫奇酷(TAFTIC)FH-S010(東洋紡股份有限公司)等塔夫奇酷系列。As a specific example of the particle, a TAFTIC series such as TAFTIC FH-S010 (Toyobo Co., Ltd.), which is an acrylic resin particle, can be cited.

特定脫模層中所含的粒子的含有率為5體積%~65體積%。 若粒子的含有率為5體積%以上,則存在如下傾向:可於特定脫模層表面充分地形成凹凸,所成型的半導體封裝表面外觀的均一性得到提高而充分獲得抑制密封材料的流動痕跡的效果。自該觀點考慮,粒子的含有率的下限較佳為10體積%,更佳為20體積%。 而且,若粒子的含有率為65體積%以下,則存在如下傾向:藉由特定脫模層中的後述的樹脂成分而容易將粒子固定,粒子脫落的可能性降低,可抑制對所成型的半導體封裝表面的污染,且經濟性亦較佳。自該觀點考慮,粒子的含有率的上限較佳為60體積%,更佳為50體積%。 The content rate of the particles contained in the specific release layer is 5 to 65% by volume. If the particle content is 5 vol% or more, there is a tendency that the surface of the specific release layer can be sufficiently uneven, the uniformity of the appearance of the molded semiconductor package surface is improved, and the flow mark of the sealing material is sufficiently suppressed. effect. From this viewpoint, the lower limit of the particle content is preferably 10% by volume, and more preferably 20% by volume. In addition, if the content of particles is 65% by volume or less, there is a tendency that the particles are easily fixed by the resin component described later in the specific release layer, the possibility of particles falling off is reduced, and the impact on the molded semiconductor can be suppressed. Pollution of the package surface, and the economy is also better. From this viewpoint, the upper limit of the content of particles is preferably 60% by volume, and more preferably 50% by volume.

粒子的含有率例如可藉由掃描式電子顯微鏡(Scanning Electron Microscope,SEM)對脫模片的特定脫模層的剖面進行觀察,藉此以每單位體積的粒子的比例的形式而算出。詳細而言,可藉由以下的方法而算出。 The content of particles can be calculated as the ratio of particles per unit volume by observing the cross section of the specific release layer of the release sheet with a scanning electron microscope (Scanning Electron Microscope, SEM), for example. Specifically, it can be calculated by the following method.

首先,藉由SEM觀察特定脫模層的剖面,並測定該剖面中的任意面積(以下亦稱為「特定面積」)中所含的粒子數及粒徑。另外,基於所述特定面積設定任意體積(以下亦稱為「特定體積」),算出該特定體積中所含的粒子數。另外,基於粒子的粒徑,算出每一個粒子的體積。而且,根據所算出的粒子數及每一個粒子的體積,算出特定體積中所含的粒子的總體積,該粒子的總體積除以特定體積,藉此可算出特定脫模層中所含的粒子的體積含有率。 First, the cross-section of a specific release layer is observed by SEM, and the number of particles and the particle size contained in an arbitrary area (hereinafter also referred to as "specific area") in the cross-section are measured. In addition, an arbitrary volume (hereinafter also referred to as "specific volume") is set based on the specific area, and the number of particles contained in the specific volume is calculated. In addition, the volume of each particle is calculated based on the particle diameter of the particle. Furthermore, based on the calculated number of particles and the volume of each particle, the total volume of the particles contained in the specific volume is calculated, and the total volume of the particles is divided by the specific volume to calculate the particles contained in the specific release layer The volume content rate.

作為其他方法,測定25℃下的特定脫模層的質量(Wc),藉由甲苯等有機溶劑溶解該特定脫模層,測定所殘存的粒子的25℃下的質量(Wf)。其次,使用電子比重計或比重瓶,求出25℃下的粒子的比重(df)。其次,藉由同樣的方法測定25℃下的特定脫模層的比重(dc)。其次,求出特定脫模層的體積(Vc)及所殘存的粒子的體積(Vf),如(式1)所示般,所殘存的粒子的體積除以特定脫模層的體積,藉此以粒子的體積比率(Vr)的形式而求出。As another method, the mass (Wc) of the specific release layer at 25°C is measured, and the specific release layer is dissolved in an organic solvent such as toluene to measure the mass (Wf) of the remaining particles at 25°C. Next, use an electronic hydrometer or a pycnometer to obtain the specific gravity (df) of the particles at 25°C. Next, the specific gravity (dc) of the specific release layer at 25°C was measured by the same method. Next, the volume (Vc) of the specific release layer and the volume (Vf) of the remaining particles are calculated. As shown in (Equation 1), the volume of the remaining particles is divided by the volume of the specific release layer, thereby It is calculated as the volume ratio (Vr) of particles.

(式1) Vc=Wc/dc Vf=Wf/df Vr=Vf/Vc(Formula 1) Vc=Wc/dc Vf=Wf/df Vr=Vf/Vc

Vc:脫模層的體積(cm3 ) Wc:脫模層的質量(g) dc:脫模層的比重(g/cm3 ) Vf:粒子的體積(cm3 ) Wf:粒子的質量(g) df:粒子的比重(g/cm3 ) Vr:粒子的體積比率 另外,該測定方法中的特定脫模層可為自脫模片剝離而成者,亦可為為了該測定方法用途而另行製作者。Vc: Volume of the release layer (cm 3 ) Wc: Mass of the release layer (g) dc: Specific gravity of the release layer (g/cm 3 ) Vf: Volume of particles (cm 3 ) Wf: Mass of particles (g ) Df: Specific gravity of particles (g/cm 3 ) Vr: Volume ratio of particles In addition, the specific release layer in the measurement method may be peeled from the release sheet, or it may be used separately for the purpose of the measurement method maker.

(特定脫模層的樹脂成分) 特定脫模層亦可進一步含有樹脂成分。藉由含有樹脂成分,將粒子固定於特定脫模層內。 特定脫模層的樹脂成分並無特別限定。自與半導體封裝的脫模性、耐熱性等觀點考慮,樹脂成分較佳為丙烯酸樹脂或矽酮樹脂,更佳為交聯型丙烯酸樹脂(以下亦稱為「交聯型丙烯酸系共聚物」)。(Resin component of specific release layer) The specific release layer may further contain a resin component. By containing the resin component, the particles are fixed in the specific release layer. The resin component of the specific release layer is not particularly limited. From the viewpoints of mold releasability and heat resistance with semiconductor packages, the resin component is preferably acrylic resin or silicone resin, and more preferably cross-linked acrylic resin (hereinafter also referred to as "cross-linked acrylic copolymer") .

丙烯酸樹脂較佳為以丙烯酸丁酯、丙烯酸乙酯、丙烯酸-2-乙基己酯等低玻璃轉移溫度(Tg)單體為主單體,且與丙烯酸、甲基丙烯酸、甲基丙烯酸羥基乙酯、丙烯酸羥基乙酯、丙烯醯胺、丙烯腈等官能基單體共聚而所得的丙烯酸系共聚物。而且,交聯型丙烯酸系共聚物可藉由如下方式而製造:使用交聯劑對所述單體進行交聯。 The acrylic resin is preferably a monomer with a low glass transition temperature (Tg) such as butyl acrylate, ethyl acrylate, 2-ethylhexyl acrylate, etc., and is combined with acrylic acid, methacrylic acid, and hydroxyethyl methacrylate. An acrylic copolymer obtained by copolymerizing functional monomers such as ester, hydroxyethyl acrylate, acrylamide, and acrylonitrile. Furthermore, the crosslinked acrylic copolymer can be produced by crosslinking the monomer using a crosslinking agent.

作為交聯型丙烯酸系共聚物的製造中所使用的交聯劑,可列舉:異氰酸酯化合物、三聚氰胺化合物、環氧化合物等公知的交聯劑。而且,為了在丙烯酸樹脂中形成緩慢地擴大的網狀結構,交聯劑更佳為3官能、4官能等多官能交聯劑。 Examples of the crosslinking agent used in the production of the crosslinked acrylic copolymer include known crosslinking agents such as isocyanate compounds, melamine compounds, and epoxy compounds. Furthermore, in order to form a gradually expanding network structure in the acrylic resin, the crosslinking agent is more preferably a trifunctional, tetrafunctional, or other multifunctional crosslinking agent.

使用如上所述的交聯劑而製造的交聯型丙烯酸系共聚物具有緩慢地擴大的網狀結構,因此若將該交聯型丙烯酸系共聚物用作特定脫模層的樹脂成分,則特定脫模層的延伸性得到提高,抑制阻礙基材層的延伸性的現象,因此可提高在壓縮成型時的脫模片對模具的追隨性。 The cross-linked acrylic copolymer produced by using the above-mentioned cross-linking agent has a slowly expanding network structure. Therefore, if the cross-linked acrylic copolymer is used as the resin component of the specific release layer, the specific The extensibility of the release layer is improved, and the phenomenon that hinders the extensibility of the base layer is suppressed, and therefore, the followability of the release sheet to the mold during compression molding can be improved.

自該觀點考慮,在交聯型丙烯酸系共聚物的製造中所使用的交聯劑的量較佳為相對於丙烯酸系共聚物100質量份而言為3質量份~100質量份,更佳為5質量份~70質量份。若交聯劑的量為3質量份以上,則確保樹脂成分的強度,因此可防止污染;若交聯劑的量為100質量份以下,則交聯型丙烯酸系共聚物的柔軟性得到提高,脫模層的延伸性得到提高。 From this viewpoint, the amount of the crosslinking agent used in the production of the crosslinked acrylic copolymer is preferably 3 parts by mass to 100 parts by mass relative to 100 parts by mass of the acrylic copolymer, and more preferably 5 parts by mass to 70 parts by mass. If the amount of the crosslinking agent is 3 parts by mass or more, the strength of the resin component is ensured, and therefore contamination can be prevented; if the amount of the crosslinking agent is 100 parts by mass or less, the flexibility of the crosslinked acrylic copolymer is improved. The extensibility of the release layer is improved.

(其他成分) (Other ingredients)

只要不阻礙本發明的效果,特定脫模層亦可視需要進一步含有溶劑、固著(anchoring)提昇劑、交聯促進劑、抗靜電劑、著色劑等。As long as the effect of the present invention is not hindered, the specific release layer may further contain a solvent, anchoring enhancer, crosslinking accelerator, antistatic agent, coloring agent, etc. as necessary.

(特定脫模層的厚度) 特定脫模層的厚度並無特別限定,可考慮與所使用的粒子的平均粒徑的關係而適宜設定。特定脫模層的厚度較佳為0.1 μm~100 μm,更佳為1 μm~50 μm。 在特定脫模層的厚度極端地薄於所使用的粒子的平均粒徑的情況下,存在如下可能性:變得難以將粒子固定於特定脫模層中,粒子脫落的可能性變高,成為對所成型的半導體封裝表面污染的原因。而且,在特定脫模層的厚度極端地厚於所使用的粒子的平均粒徑的情況下,存在如下可能性:變得難以於特定脫模層表面充分地形成凹凸,無法充分獲得使所成型的半導體封裝表面外觀的均一性提高的效果、抑制密封材料的流動痕跡的效果等。而且,於經濟上亦不利。 另外,本說明書中的所謂「特定脫模層的厚度」是指乾燥厚度,可藉由所述層的厚度的測定方法而對脫模片的特定脫模層進行測定。(The thickness of the specific release layer) The thickness of the specific release layer is not particularly limited, and can be appropriately set in consideration of the relationship with the average particle diameter of the particles used. The thickness of the specific release layer is preferably 0.1 μm to 100 μm, more preferably 1 μm to 50 μm. When the thickness of the specific release layer is extremely thinner than the average particle size of the particles used, there is a possibility that it becomes difficult to fix the particles in the specific release layer, and the possibility of particles falling off becomes higher. Causes of contamination on the surface of the molded semiconductor package. In addition, when the thickness of the specific release layer is extremely thicker than the average particle diameter of the particles used, there is a possibility that it becomes difficult to sufficiently form irregularities on the surface of the specific release layer, and the molded The effect of improving the uniformity of the surface appearance of the semiconductor package, and the effect of suppressing the flow mark of the sealing material. Moreover, it is economically disadvantageous. In addition, the "thickness of a specific release layer" in this specification means a dry thickness, and the specific release layer of a release sheet can be measured by the measuring method of the thickness of the said layer.

(特定脫模層的表面粗糙度) 特定脫模層的外表面(與基材層對向的面為相反側的面)較佳為具有凹凸。特定脫模層的表面粗糙度可藉由算術平均粗糙度(Ra)或十點平均粗糙度(Rz)而評價。 算術平均粗糙度(Ra)及十點平均粗糙度(Rz)例如可為使用表面粗糙度測定裝置(例如小坂研究所股份有限公司、型號SE-3500),藉由JIS B0601(2013)或ISO 4287(1997)對在觸針前端直徑為2 μm、送入速率為0.5 mm/s及掃描距離為8 mm的條件下所測定的結果進行分析而所得的值。自封裝表面外觀的均一性的觀點考慮,特定脫模層的算術平均粗糙度(Ra)較佳為0.5 μm~5 μm,十點平均粗糙度(Rz)較佳為5 μm~50 μm。 藉由調整粒子的平均粒徑與特定脫模層的厚度,可將特定脫模層的表面粗糙度調整為所述範圍內。(Surface roughness of the specific release layer) The outer surface of the specific release layer (the surface facing the base material layer is the surface on the opposite side) preferably has unevenness. The surface roughness of a specific release layer can be evaluated by arithmetic average roughness (Ra) or ten-point average roughness (Rz). The arithmetic average roughness (Ra) and ten-point average roughness (Rz) can be, for example, the use of a surface roughness measuring device (such as Kosaka Research Institute Co., Ltd., model SE-3500), by JIS B0601 (2013) or ISO 4287 (1997) The value obtained by analyzing the results measured under the conditions of a stylus tip diameter of 2 μm, a feed rate of 0.5 mm/s, and a scanning distance of 8 mm. From the viewpoint of the uniformity of the package surface appearance, the arithmetic average roughness (Ra) of the specific release layer is preferably 0.5 μm to 5 μm, and the ten-point average roughness (Rz) is preferably 5 μm to 50 μm. By adjusting the average particle diameter of the particles and the thickness of the specific release layer, the surface roughness of the specific release layer can be adjusted within the above range.

[基材層] 脫模片包含基材層。基材層並無特別限定,可自在該技術領域中所使用的含有樹脂的基材層中適宜選擇。自使脫模片對於模具形狀的追隨性提高的觀點考慮,較佳為使用延伸性優異的含有樹脂的基材層。 若考慮在高溫(100℃~200℃左右)下進行密封材料的成形,則基材層理想的是具有該溫度以上的耐熱性。而且,為了抑制在將脫模片安裝於模具中時及成形中的樹脂流動時,產生密封樹脂的皺褶、脫模片的破裂等,重要的是考慮高溫時的彈性模數、伸長率等而選擇基材層。[Substrate layer] The release sheet includes a substrate layer. The substrate layer is not particularly limited, and can be appropriately selected from resin-containing substrate layers used in the technical field. From the viewpoint of improving the followability of the release sheet to the mold shape, it is preferable to use a resin-containing substrate layer having excellent extensibility. Considering that the sealing material is molded at a high temperature (about 100°C to 200°C), the base layer desirably has heat resistance above this temperature. In addition, in order to prevent wrinkles of the sealing resin and breakage of the release sheet when the release sheet is installed in the mold and during molding, it is important to consider the modulus of elasticity, elongation, etc. at high temperatures. Instead, select the substrate layer.

自耐熱性及高溫時的彈性模數的觀點考慮,基材層的材料較佳為聚酯樹脂。聚酯樹脂的例子可列舉:聚對苯二甲酸乙二酯樹脂、聚萘二甲酸乙二酯樹脂及聚對苯二甲酸丁二酯樹脂以及該些的共聚物及改性樹脂。 基材層較佳為將聚酯樹脂成型為片狀者,基材層更佳為聚酯膜,自對模具的追隨性的觀點考慮,較佳為雙軸延伸聚酯膜。 基材層的厚度並無特別限定,較佳為5 μm~100 μm,更佳為10 μm~70 μm。若厚度為5 μm以上,則存在脫模片的操作性優異、難以產生皺褶的傾向。若厚度為100 μm以下,則存在如下傾向:成型時對模具的追隨性優異,因此抑制所成型的半導體封裝的皺褶等的產生。From the viewpoint of heat resistance and elastic modulus at high temperature, the material of the base layer is preferably a polyester resin. Examples of the polyester resin include polyethylene terephthalate resin, polyethylene naphthalate resin, and polybutylene terephthalate resin, and copolymers and modified resins of these. The base material layer is preferably a polyester resin molded into a sheet shape, and the base material layer is more preferably a polyester film. From the viewpoint of conformability to a mold, a biaxially stretched polyester film is preferable. The thickness of the substrate layer is not particularly limited, but is preferably 5 μm to 100 μm, more preferably 10 μm to 70 μm. If the thickness is 5 μm or more, the release sheet has excellent handleability and tends to be less likely to cause wrinkles. If the thickness is 100 μm or less, there is a tendency that the followability to the mold during molding is excellent, and therefore the generation of wrinkles or the like of the molded semiconductor package is suppressed.

[其他構成] 基材層是與模具表面接觸的層,由於所使用的材料而變得需要更大的剝離力以使脫模片自模具剝離。在將此種難以自模具剝離的材料用於基材層中的情況下,較佳為以變得容易自模具剝離脫模片的方式調整脫模片。例如,為了使自模具的脫模性提高,亦可對基材層的與特定脫模層相接的相反面、亦即基材層的模具側的面進行緞面製程(satin process)(例如緞面整飾、或無光澤整飾)等表面加工,或者重新設置其他脫模層(第2脫模層)。作為第2脫模層的材料,若為滿足耐熱性、自模具的剝離性等的材料,則並無特別限定,亦可使用與特定脫模層相同的材料。第2脫模層的厚度並無特別限定,較佳為0.1 μm~100 μm。[Other Configurations] The base material layer is a layer in contact with the surface of the mold, and due to the material used, a larger peeling force is required to peel the release sheet from the mold. When such a material that is difficult to peel from the mold is used for the base material layer, it is preferable to adjust the release sheet so that it becomes easy to peel the release sheet from the mold. For example, in order to improve the releasability from the mold, it is also possible to perform a satin process (satin process) on the opposite surface of the substrate layer that is in contact with the specific release layer, that is, the surface of the substrate layer on the mold side (for example, Surface finishing such as satin finishing or matt finishing), or resetting other release layer (second release layer). The material of the second release layer is not particularly limited as long as it satisfies heat resistance, releasability from the mold, and the like, and the same material as the specific release layer can be used. The thickness of the second release layer is not particularly limited, but is preferably 0.1 μm to 100 μm.

另外,亦可視需要在特定脫模層與基材層之間、基材層與第2脫模層之間等設置特定脫模層或第2脫模層的固著提昇層、抗靜電層、著色層等層。In addition, it is also possible to provide a specific release layer or a fixing promotion layer of the second release layer, an antistatic layer, etc. between the specific release layer and the base material layer, between the base material layer and the second release layer, etc. Colored layers and other layers.

<脫模片的製造方法><Method of manufacturing release sheet>

脫模片可藉由公知的方法而製造。例如可藉由如下方式而製造脫模片:將含有相對於總固體成分而言為5體積%~65體積%的粒子的脫模層形成用組成物賦予至基材層的單面,並進行乾燥。脫模層形成用組成物亦可含有樹脂成分及視需要添加的其他成分。 The release sheet can be manufactured by a known method. For example, a release sheet can be produced by applying a release layer forming composition containing 5 to 65% by volume of particles with respect to the total solid content on one side of the base layer, and performing dry. The composition for forming a release layer may contain a resin component and other components added as necessary.

[脫模層形成用組成物的製備] [Preparation of composition for forming release layer]

脫模層形成用組成物的製備方法並無特別限制,例如可列舉將粒子分散於溶劑中的方法,可使用公知的組成物製備方法。 The method of preparing the composition for forming a release layer is not particularly limited, and for example, a method of dispersing particles in a solvent is mentioned, and a known method of preparing the composition can be used.

脫模層形成用組成物的製備中所使用的溶劑並無特別限定,較佳為可分散粒子、且可溶解樹脂成分的有機溶劑。有機溶劑可列舉甲苯、甲基乙基酮、乙酸乙酯等。 The solvent used in the preparation of the composition for forming a release layer is not particularly limited, but an organic solvent that can disperse particles and dissolve the resin component is preferred. Examples of organic solvents include toluene, methyl ethyl ketone, ethyl acetate and the like.

[賦予及乾燥] [Apply and Dry]

將脫模層形成用組成物賦予至基材層的單面的方法並無特別限定,可使用輥塗法、棒塗、吻合式塗佈等公知的塗佈方法。另外,在賦予脫模層形成用組成物時,以乾燥後的組成物層(脫模層)的厚度成為0.1μm~100μm的方式進行賦予。 The method of applying the composition for forming a release layer to one side of the base material layer is not particularly limited, and a known coating method such as roll coating, bar coating, and kiss coating can be used. In addition, when applying the composition for forming a release layer, it is applied so that the thickness of the composition layer (release layer) after drying becomes 0.1 μm to 100 μm.

對所賦予的脫模層形成用組成物進行乾燥的方法並無特別限定,可使用公知的乾燥方法。例如可為在50℃~150℃下進行0.1分鐘~60分鐘乾燥的方法。 The method of drying the provided composition for mold release layer formation is not specifically limited, A well-known drying method can be used. For example, it may be a method of drying at 50°C to 150°C for 0.1 minute to 60 minutes.

<半導體封裝的成型> <Semiconductor Package Molding>

壓縮成型用脫模片可用於半導體封裝的成型中,特別是可適宜地用於壓縮成型中。The release sheet for compression molding can be used in the molding of semiconductor packages, and can be suitably used in compression molding in particular.

通常情況下,於半導體封裝的壓縮成型中,在壓縮成型裝置的模具上配置脫模片,藉由真空吸附等使脫模片追隨模具的形狀。其後,將半導體封裝的密封材料(例如環氧樹脂等)放入至模具中,於其上配置半導體晶片,一面進行加熱一面對模具進行壓縮,藉此使密封材料硬化,成型半導體封裝。其後,打開模具,將所成型的半導體封裝取出。Generally, in the compression molding of a semiconductor package, a release sheet is placed on a mold of a compression molding device, and the release sheet is made to follow the shape of the mold by vacuum suction or the like. After that, the sealing material of the semiconductor package (such as epoxy resin) is put into the mold, the semiconductor chip is placed on it, and the mold is heated while being heated, thereby hardening the sealing material and forming the semiconductor package. After that, the mold is opened, and the molded semiconductor package is taken out.

如上所述,在壓縮成型中使脫模片吸附於模具上,因此要求脫模片對模具形狀的追隨性優異。在脫模片中,使用延伸性優異的樹脂作為基材層,藉此可使對模具的追隨性進一步提高。As described above, in compression molding, the release sheet is adsorbed to the mold, and therefore, the release sheet is required to have excellent followability to the shape of the mold. In the release sheet, a resin having excellent extensibility is used as the base material layer, thereby making it possible to further improve the followability to the mold.

本說明書的壓縮成型用脫模片在藉由壓縮成型而成型半導體時,以特定脫模層面與半導體封裝(成型品)相接的方式進行安裝,藉此在成型後的剝離過程中,脫模片自半導體封裝剝離變得容易,可不對半導體封裝造成損傷地使密封材料與模具容易地脫模,所成型的封裝表面外觀的均一性優異且亦可抑制密封材料的流動痕跡,亦可抑制自膜向所成型的封裝表面的污染。 [實施例]The release sheet for compression molding in this specification is mounted in such a way that a specific release layer is in contact with the semiconductor package (molded product) when a semiconductor is molded by compression molding, thereby releasing the mold during the peeling process after molding The sheet can be easily peeled from the semiconductor package, the sealing material and the mold can be easily demolded without causing damage to the semiconductor package, and the surface appearance of the molded package is excellent and the flow marks of the sealing material can also be suppressed. Contamination of the film to the molded package surface. [Example]

以下,參照實施例而對本發明進行具體的說明。其中,本發明並不受該些實施例限制。Hereinafter, the present invention will be specifically described with reference to Examples. Among them, the present invention is not limited by these embodiments.

<實施例1> 將相對於100質量份的丙烯酸樹脂(帝國化學產業股份有限公司;WS-023)而言,10質量份的作為交聯劑的克羅奈特(CORONATE)L(日本聚氨酯工業股份有限公司,商品名)、10質量份的作為粒子(C)的塔夫奇酷FH-S010(東洋紡股份有限公司、商品名、丙烯酸粒子、平均粒徑為10 μm)添加於甲苯中而製成固體成分為15質量%的甲苯溶液,從而製備脫模層形成用組成物。 對作為基材層的厚度為25 μm的雙軸延伸聚對苯二甲酸乙二酯膜(尤尼吉可股份有限公司;S-25)進行電暈處理。其後,於所述雙軸延伸聚對苯二甲酸乙二酯膜的單面上,使用輥塗機,以乾燥後的平均厚度成為10 μm的方式塗佈脫模層形成用組成物,進行乾燥而形成脫模層,獲得脫模片。 藉由利用SEM的剖面觀察測定所得的脫模片的脫模層中的粒子(C)的含有率,結果是10體積%。<Example 1> With respect to 100 parts by mass of acrylic resin (Imperial Chemical Industry Co., Ltd.; WS-023), 10 parts by mass of CORONATE L (Nippon Polyurethane Industry Co., Ltd.) as a crosslinking agent Co., Ltd., trade name), and 10 parts by mass of Tafchicool FH-S010 (Toyobo Co., Ltd., trade name, acrylic particles, average particle size of 10 μm) as particles (C) added to toluene A toluene solution having a solid content of 15% by mass was prepared to prepare a composition for forming a release layer. A 25 μm-thick biaxially stretched polyethylene terephthalate film (Universal Co., Ltd.; S-25) as a base layer was subjected to corona treatment. Thereafter, on one side of the biaxially stretched polyethylene terephthalate film, a roll coater was used to coat the release layer forming composition so that the average thickness after drying became 10 μm. It was dried to form a release layer, and a release sheet was obtained. The content rate of the particles (C) in the release layer of the obtained release sheet was measured by cross-sectional observation with SEM, and it was 10% by volume.

[脫模片的特性評價] 將該脫模片安裝於在下模上安放有半導體裸晶片(bare chip)的壓縮成型模具的上模上,藉由真空進行固定後,進行鎖模,對密封材料(日立化成股份有限公司;商品名「CEL-9750ZHF10」)進行成型(壓縮成型)而獲得半導體封裝。模具溫度為180℃、成形壓力為6.86 MPa(70 kgf/cm2 )、成形時間為180秒。 藉由下述方法評價脫模片與成型後的密封材料的脫模性、所成型的半導體封裝表面的外觀的均一性(密封材料的流動痕跡的有無)及粒子(C)向所成型的半導體封裝表面脫落的有無(污染的有無)。將評價結果表示於表1及表2中。[Evaluation of the characteristics of the release sheet] The release sheet was mounted on the upper mold of the compression molding mold in which the semiconductor bare chip was placed on the lower mold, fixed by vacuum, and then the mold was clamped to seal the material (Hitachi Chemical Co., Ltd.; trade name "CEL-9750ZHF10") molding (compression molding) to obtain a semiconductor package. The mold temperature is 180°C, the molding pressure is 6.86 MPa (70 kgf/cm 2 ), and the molding time is 180 seconds. The following methods were used to evaluate the releasability of the mold release sheet and the molded sealing material, the uniformity of the appearance of the molded semiconductor package surface (the presence or absence of flow marks of the sealing material), and the particles (C) to the molded semiconductor Whether the package surface is peeled off (whether it is contaminated). The evaluation results are shown in Table 1 and Table 2.

(與成型後的密封材料的脫模性的評價) 作為成型後的脫模片與密封材料的脫模性的指標,測定以剝離角度為180°、剝離速度為300 mm/min進行剝離試驗時的剝離力,以下述基準進行評價。 A:小於0.5 N/50 mm B:0.5 N/50 mm以上且小於5.0 N/50 mm C:5.0 N/50 mm以上(Evaluation of the releasability from the molded sealing material) As an index of the releasability of the molded release sheet and the sealing material, when the peeling angle is 180° and the peeling speed is 300 mm/min, the peeling test is measured The peeling force of, was evaluated based on the following criteria. A: Less than 0.5 N/50 mm B: 0.5 N/50 mm or more and less than 5.0 N/50 mm C: 5.0 N/50 mm or more

(半導體封裝表面的外觀的評價) 藉由目視及光學顯微鏡(100倍)觀察半導體封裝表面的密封材料的流動痕跡的有無,以下述基準進行評價。 A:於目視及顯微鏡觀察的任意者中均未觀察到流動痕跡。 B:於目視中未觀察到流動痕跡,於顯微鏡觀察中稍微觀察到流動痕跡。 C:於目視及顯微鏡觀察的任意者中均觀察到流動痕跡。(Evaluation of the appearance of the surface of the semiconductor package) The presence or absence of flow marks of the sealing material on the surface of the semiconductor package was observed by visual observation and an optical microscope (100 times), and the evaluation was performed based on the following criteria. A: No trace of flow was observed in any of visual observation and microscope observation. B: No trace of flow was observed visually, and trace of flow was slightly observed in microscope observation. C: Flow traces are observed in any of visual observation and microscope observation.

(粒子(C)向半導體封裝表面脫落的有無) 藉由目視及光學顯微鏡(100倍)觀察粒子(C)向半導體封裝表面脫落的有無,以下述基準進行評價。 A:於目視及顯微鏡觀察的任意者中均未觀察到粒子(C)的脫落。 B:於目視中未觀察到粒子(C)的脫落,於顯微鏡觀察中稍微觀察到粒子(C)的脫落。 C:於目視及顯微鏡觀察的任意者中均觀察到粒子(C)的脫落。(The presence or absence of particles (C) falling off the surface of the semiconductor package) The presence or absence of particles (C) falling off the surface of the semiconductor package was observed by visual inspection and an optical microscope (100 times), and the evaluation was made based on the following criteria. A: No falling off of particles (C) was observed in any of visual observation and microscope observation. B: No falling off of particles (C) was observed visually, and falling off of particles (C) was slightly observed in microscopic observation. C: Falling off of particles (C) was observed in both of visual inspection and microscope observation.

<實施例2~實施例9及比較例1~比較例3> 如下述表1及表2所示般變更A層的乾燥後的厚度、脫模層的有無、粒子(C)的種類或含有率,除此以外與實施例1同樣地進行而製作實施例2~實施例9及比較例1~比較例3的脫模片,且進行評價。將評價結果表示於表1及表2中。<Example 2 to Example 9 and Comparative Example 1 to Comparative Example 3> The thickness of the layer A after drying, the presence or absence of a release layer, and the type or content of the particles (C) were changed as shown in Table 1 and Table 2 below Except for the rate, it carried out similarly to Example 1, and produced the release sheet of Example 2-Example 9 and Comparative Example 1-Comparative Example 3, and evaluated. The evaluation results are shown in Table 1 and Table 2.

表1及表2中所示的粒子(C)如下所示。 ·塔夫奇酷FH-S015(東洋紡股份有限公司,商品名) ·塔夫奇酷FH-S020(東洋紡股份有限公司,商品名) ·塔夫奇酷FH-S050(東洋紡股份有限公司,商品名) ·SX-500H(綜研化學股份有限公司,商品名) ·塔夫奇酷ASF-7(東洋紡股份有限公司,商品名) ·E606(東麗道康寧股份有限公司,商品名) ·BM30X-12(積水化成品工業股份有限公司,商品名) ·HPS-3500(東亞合成股份有限公司,商品名) 另外,表1及表2中的「PMMA」是指聚甲基丙烯酸甲酯,「PMBA」是指聚甲基丙烯酸丁酯。 表2中的「-」表示未使用材料、或無法檢測出特性。The particles (C) shown in Table 1 and Table 2 are as follows. ·Tafkiku FH-S015 (Toyobo Co., Ltd., trade name) ·Tafkiku FH-S020 (Toyobo Co., Ltd., trade name) ·Tafkiku FH-S050 (Toyobo Co., Ltd., trade name) ) ·SX-500H (Zhongken Chemical Co., Ltd., trade name) ·Tafkiku ASF-7 (Toyobo Co., Ltd., trade name) ·E606 (Toray Dow Corning Co., Ltd., trade name) ·BM30X-12 ( Sekisui Chemical Industry Co., Ltd., trade name) ·HPS-3500 (Toa Gosei Co., Ltd., trade name) In addition, "PMMA" in Table 1 and Table 2 refers to polymethyl methacrylate, and "PMBA" refers to Refers to polybutyl methacrylate. The "-" in Table 2 means that no material is used or the characteristics cannot be detected.

[表1]

Figure 105115782-A0304-0001
[Table 1]
Figure 105115782-A0304-0001

[表2]

Figure 105115782-A0304-0002
[Table 2]
Figure 105115782-A0304-0002

如表1及表2所示,實施例1~實施例9的脫模片與成型後的密封材料的脫模性良好,所成型的封裝表面外觀的均一性優異,粒子(C)向所成型的封裝表面脫落亦得到抑制。 另外,雖然在表1及表2中並未表示,但除了將粒子(C)的含有率設為1體積%以外,與實施例1同樣地製造脫模片而進行評價,結果在目視及顯微鏡觀察的任意者中均觀察到流動痕跡,未能充分獲得表面外觀的均一性。As shown in Table 1 and Table 2, the release sheet of Examples 1 to 9 has good releasability from the molded sealing material, and the molded package has excellent surface appearance uniformity, and the particles (C) are molded The peeling of the package surface is also suppressed. In addition, although not shown in Table 1 and Table 2, a release sheet was produced and evaluated in the same manner as in Example 1 except that the content of particles (C) was set to 1% by volume. Flow marks were observed in any of the observations, and the uniformity of the surface appearance was not sufficiently obtained.

另一方面,在並無脫模層的比較例1中,在成型後無法將密封材料與脫模片剝離。在使用不含粒子的脫模層的比較例2中,所成型的封裝表面外觀不均一,觀察到密封材料的流動痕跡。在粒子的含有率超過65體積%的比較例3中,觀察到粒子的脫落。On the other hand, in Comparative Example 1 without a release layer, the sealing material and the release sheet could not be peeled off after molding. In Comparative Example 2 in which a particle-free release layer was used, the molded package surface had uneven appearance, and flow marks of the sealing material were observed. In Comparative Example 3 in which the content of particles exceeded 65% by volume, dropout of particles was observed.

如上述所示,若使用本發明的實施方式的脫模片,則可提供具有如下性質的脫模膜:在樹脂成型半導體封裝時,可並不對半導體封裝造成損傷地使密封材料與模具容易地脫模,所成型的封裝表面外觀的均一性優異,自膜向所成型的封裝表面的污染亦得到抑制。As described above, if the release sheet according to the embodiment of the present invention is used, a release film having the following properties can be provided: when a semiconductor package is resin molded, the sealing material and the mold can be easily made without damaging the semiconductor package. The mold release has excellent uniformity in the appearance of the molded package surface, and contamination from the film to the molded package surface is also suppressed.

no

no

Claims (5)

一種半導體壓縮成型用脫模片,其包括含有粒子的脫模層、及基材層,所述脫模層的厚度為0.1μm~100μm,所述粒子的平均粒徑為1μm~55μm,且所述脫模層中的所述粒子的含有率為5體積%~65體積%。 A release sheet for semiconductor compression molding, comprising a release layer containing particles and a substrate layer. The release layer has a thickness of 0.1 μm to 100 μm, and the average particle size of the particles is 1 μm to 55 μm. The content rate of the particles in the release layer is 5 vol% to 65% by volume. 如申請專利範圍第1項所述的半導體壓縮成型用脫模片,其中,所述粒子為樹脂粒子。 The release sheet for semiconductor compression molding according to the first item of the patent application, wherein the particles are resin particles. 如申請專利範圍第2項所述的半導體壓縮成型用脫模片,其中,所述樹脂粒子包含選自由丙烯酸樹脂、聚烯烴樹脂、聚苯乙烯樹脂、聚丙烯腈樹脂及矽酮樹脂所組成的群組中的至少一種。 The release sheet for semiconductor compression molding according to the second patent application, wherein the resin particles are selected from acrylic resins, polyolefin resins, polystyrene resins, polyacrylonitrile resins, and silicone resins. At least one of the group. 如申請專利範圍第1項或第2項所述的半導體壓縮成型用脫模片,所述基材層為聚酯膜。 According to the release sheet for semiconductor compression molding according to item 1 or item 2 of the scope of patent application, the substrate layer is a polyester film. 一種半導體封裝,其是使用如申請專利範圍第1項至第4項中任一項所述的半導體壓縮成型用脫模片而成型者。 A semiconductor package which is molded using the release sheet for semiconductor compression molding as described in any one of items 1 to 4 of the scope of patent application.
TW105115782A 2016-05-20 2016-05-20 Release sheet for compression molding of a semiconductor, and semiconductor package molded using the same TWI697406B (en)

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JP2004200467A (en) * 2002-12-19 2004-07-15 Hitachi Chem Co Ltd Release sheet for semiconductor mould

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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