TWI695907B - Substrate processing apparatus - Google Patents

Abstract

A substrate processing apparatus includes a mounting stand installed to rotate about a rotation shaft extending along a rotary shaft of a rotary table and configured to hold a substrate, and a magnetic gear mechanism including a driven gear configured to rotate the mounting stand about the rotation shaft and a driving gear configured to drive the driven gear. The driven gear is connected to the mounting stand via the rotation shaft and installed to rotate in such a direction as to rotate the mounting stand. The driving gear is disposed in a state in which the driving surface faces the driven surface passing through a predetermined position on a movement orbit of the driven gear moving along with the rotation of the rotary table.

Description

Substrate processing device

The present invention relates to a technology for supplying processing gas to a substrate while orbiting the substrate to perform processing of the substrate.

In the manufacturing process of a semiconductor device, in order to form various films for forming an etching mask on a substrate (semiconductor wafer, hereinafter referred to as a wafer), for example, ALD (Atomic Layer Deposition) is performed. In order to improve the productivity of the semiconductor device, the above ALD will rotate the rotary table on which a plurality of wafers are mounted to revolve the wafer, and repeatedly pass the processing gas arranged along the circumferential direction of the rotary table The supply area (processing area) of the equipment. In addition, in order to perform the film formation of the above-mentioned films, although CVD (Chemical Vapor Deposition) may be performed, the film formation by CVD can also be performed by revolving the wafer in the same manner as the ALD described above.

However, in the film-forming process for revolving the wafer as described above, it is required to perform film-forming with high uniformity in the circumferential direction of the wafer. Therefore, it is required to form a concentric film thickness distribution on the wafer W, and the film is formed with high uniformity in the radial direction of the wafer, so that the entire surface of the wafer W is formed with high uniformity. More specifically, the above-mentioned concentric film thickness distribution means that the film thickness is the same or substantially the same at each position along the circumferential direction of the wafer at an equal distance from the center of the wafer, and the Each position of the wafer in the radial direction becomes a film thickness distribution with a different film thickness.

However, in the above film forming apparatus for orbiting the wafer, since it is along the radial direction of the turntable The process gas is supplied, so the film thickness distribution formed on the wafer tends to become a film thickness distribution that changes in film thickness from the center side to the peripheral side of the turntable, and the above-mentioned high uniformity is formed in the circumferential direction of the wafer Sexual film thickness distribution is really a difficult problem. For example, although there is known a film forming apparatus that forms a specific temperature distribution in the surface of a wafer and performs CVD to form the above-mentioned concentric circular film thickness distribution, in this film forming apparatus, the wafer is subjected to a film forming process There was no revolution in China. Therefore, the film forming apparatus configured as described above is not a solution to the above-mentioned problems.

In addition, it is also required to have a method of high reproducibility of the film-forming conditions of the wafer or the ability to control and adjust the film-forming conditions when the wafer is formed with concentric films.

The present invention provides a substrate processing apparatus that can perform uniform processing along the circumferential direction of a substrate when the substrate is placed on one side of a turntable while revolving and processing gas is supplied to the substrate for processing.

The substrate processing apparatus of the present invention is installed in a processing container, and the substrate is placed on one side of a rotary table that rotates around a rotation axis, and by rotating the rotary table, the substrate is supplied with processing gas while orbiting A substrate processing apparatus for processing; it is provided with: a mounting table which is rotatably arranged around a rotation axis extending in the direction along the rotation axis of the rotary table for mounting the substrate; and a magnetic gear The mechanism has a passive gear portion for rotating the mounting table around the rotation shaft, and a driving gear portion for driving the passive gear portion; the passive gear portion is connected to the mounting table through the rotation shaft, and It is rotatably provided in the direction of rotation of the mounting table, and is provided with a passive surface where magnetic lines of force are formed between the drive surface provided on the drive gear portion side; the drive gear portion makes the drive surface relative to the accompanying The passive gear moving in accordance with the rotation of the rotary table is arranged in a state where the passive surface of the preset position on the moving track is in the opposite direction, and in order to move the magnetic force line to rotate the passive gear, it is connected to the The driving part that the driving surface moves.

W‧‧‧ Wafer

2‧‧‧rotating table

11‧‧‧Vacuum container

12‧‧‧Top board

13‧‧‧Container body

18‧‧‧stream

21‧‧‧rotation axis

22‧‧‧Revolving drive unit for revolution

24‧‧‧wafer holder

26‧‧‧spindle

27‧‧‧Crank seal

32‧‧‧Slot

33‧‧‧ Heater

34‧‧‧Cover

42‧‧‧Support plate

43‧‧‧Bearing unit

44‧‧‧Side wall part

45‧‧‧Passive Gear Department

46‧‧‧Crank seal

47‧‧‧Cylinder wall

51‧‧‧Drive Gear

52‧‧‧Drive shaft

53‧‧‧rotation drive

191‧‧‧ Peripheral side horizontal wall

192‧‧‧Central side horizontal wall

193‧‧‧Drop column

194‧‧‧ protrusion

201, 202‧‧‧ opening

311, 312‧‧‧recess

441‧‧‧Stop

The attached drawings are included as part of this specification to show the implementation form of the present disclosure, and together with the above general description and details of the implementation form described below, illustrate the concept of the present invention.

FIG. 1 is a longitudinal cross-sectional side view of a film forming apparatus according to an embodiment of the present invention.

FIG. 2 is a cross-sectional plan view of the film forming apparatus.

Fig. 3 is a perspective view of a turntable provided in the film forming apparatus.

FIG. 4 is an enlarged longitudinal sectional side view of the film forming apparatus.

FIG. 5 is an enlarged perspective view of a magnetic gear mechanism that rotates the mounting table provided on the rotating table.

FIG. 6 is a first action diagram of the magnetic gear mechanism.

FIG. 7 is a second action diagram of the magnetic gear mechanism.

FIG. 8 is a third action diagram of the magnetic gear mechanism.

9 is an enlarged perspective view of a magnetic gear mechanism related to other types.

FIG. 10 is an enlarged perspective view of another related type of magnetic gear mechanism.

11 is an enlarged perspective view of a magnetic gear mechanism according to a second embodiment.

FIG. 12 is an explanatory diagram for explaining the rotation direction of the driven gear portion caused by the rotation speed of the driving gear portion.

13 is an explanatory diagram for explaining the rotation direction of the driven gear portion caused by the rotation speed of the driving gear portion.

FIG. 14 is an explanatory diagram for explaining the rotation direction of the driven gear portion caused by the rotation speed of the driving gear portion.

15 is a characteristic diagram showing the rotation speed of the drive gear portion and the average rotation angle of the wafer holder 24 in Example 1. FIG.

16 is a characteristic diagram showing the rotation speed of the driving gear portion and the average rotation angle of the wafer holder 24 in Example 2. FIG.

17 is a characteristic diagram showing the rotation speed of the driving gear portion and the average rotation angle of the wafer holder 24 in Example 3. FIG.

18 is a characteristic diagram showing the rotation angle of each wafer holder in Example 1-1.

19 is a characteristic diagram showing the rotation angle of each wafer holder in Example 1-2.

20 is a characteristic diagram showing the rotation angle of each wafer holder in Examples 1-3.

21 is a characteristic diagram showing the rotation angle of each wafer holder in Examples 1-4.

22 is a characteristic diagram showing the rotation angle of each wafer holder in Example 2-1.

23 is a characteristic diagram showing the rotation angle of each wafer holder in Example 2-2.

24 is a characteristic diagram showing the rotation angle of each wafer holder in Example 2-3.

25 is a characteristic diagram showing the rotation angle of each wafer holder in Examples 2-4.

26 is a characteristic diagram showing the rotation angle of each wafer holder in Example 3-1.

FIG. 27 is a characteristic diagram showing the rotation angle of each wafer holder in Example 3-2.

FIG. 28 is a characteristic diagram showing the rotation angle of each wafer holder in Example 3-3.

FIG. 29 is a characteristic diagram showing the rotation angle of each wafer holder in Example 3-4.

FIG. 30 is a characteristic diagram showing the range of the rotation angle and the range of the rotation angle in Examples 1-1 to 3-4 with little variation.

Hereinafter, the embodiment of the present invention will be described with reference to the drawings. In the following detailed description, many specific details are included in order to fully understand the present invention. However, even without the above detailed description, those with ordinary knowledge in the technical field to which the present invention belongs should still be able to implement the present invention to obtain the present invention. In other examples, in order to avoid making various implementations difficult to understand, well-known methods, sequence of steps, systems, or components have not been shown in detail.

As an embodiment of the substrate processing apparatus of the present invention, a film forming apparatus 1 that performs a film forming process (ie, ALD) on a substrate (wafer W) will be described. In the film forming apparatus 1 of this example, after the BTBAS (di(tert-butylamino) silane) gas is adsorbed on the wafer W as a raw material gas containing Si (silicon), an oxidizing gas (ozone) that oxidizes the BTBAS gas is supplied. (O ₃ ) gas) to form a molecular layer of SiO ₂ (silicon oxide), and in order to modify the molecular layer, it is treated by being exposed to the plasma generated by the plasma generating gas. The series of processes is repeated a plurality of times to form the SiO ₂ film. The above-mentioned raw material gas, oxidizing gas, and plasma generating gas system correspond to the processing gas of the present embodiment.

As shown in FIGS. 1 and 2, the film forming apparatus 1 includes a substantially circular flat vacuum container (processing container) 11 and a disk-shaped rotating table 2 arranged horizontally in the vacuum container 11. The vacuum container 11 is composed of a top plate 12 and a container body 13 constituting the side wall and bottom of the vacuum container 11.

The turntable 2 is connected to a rotary shaft 21 extending vertically downward from a position below the center of the turntable 2 through a support plate 42 described later. In order to maintain the inside of the vacuum container 11 in an airtight manner, the rotating shaft 21 penetrates a bearing portion (not shown) provided at the bottom of the container body 13 and is connected to the revolution rotation disposed below the container body 13 Drive section 22. When the rotation shaft 21 is rotated by the rotation drive unit 22 for revolution, the turntable 2 can rotate clockwise, for example, when viewed from the upper side.

The lower surface of the top plate 12 constituting the vacuum vessel 11 is formed with a center area forming portion C that is circular in plan view and protrudes downward as opposed to the center portion of the turntable 2, and from the center area forming portion C toward the turntable 2 The projections 17 and 17 having a fan shape in plan view are formed so that the outer side of the is widened. The central area forming portion C and the protruding portions 17 and 17 form a lower surface in the inner space of the vacuum container 11 than the outer area. The gap between the central region forming portion C and the central portion of the turntable 2 constitutes the N ₂ gas flow channel 18. In the process the wafer W, the inner region toward the central region of the line portion is formed of C N ₂ gas supplied from the gas supply pipe (not shown) to the outside of the turntable 2 from the flow channel 18 toward the entire circumference of the discharge N ₂ gas. The N ₂ gas has a function of preventing the raw material gas and the oxidizing gas from contacting the center of the turntable 2.

Next, the lower structure of the turntable 2 will be described.

As shown in FIGS. 1 and 3, in the film forming apparatus 1 of this example, the turntable 2 is supported from below by the disk-shaped support plate 42. In addition, the support plate 42 is to support the wafer holder 24 to be described later, on which the wafer W is placed, independently of the turntable 2 without loading the related equipment of the wafer holder 24 Applied to the structure of the turntable 2.

On the other hand, as shown in FIG. 1, the internal space of the vacuum container 11 is stored for each The turntable 2 and the support plate 42 which are arranged at intervals from above and below are divided up and down by the peripheral side lateral wall portion 191 and the central side lateral wall portion 192.

In this example, the peripheral-side lateral wall portion 191 is constituted by a generally circular-shaped assembly provided so as to protrude laterally from the inner wall surface of the container body 13 toward the center portion side of the container body 13. A center side lateral wall portion 192 constituted by a roughly disc-shaped component is arranged at an opening inner side of the annular component constituting the peripheral side lateral wall portion 191 at a substantially same height position as the peripheral side lateral wall portion 191.

As shown in FIG. 1, the central lateral wall portion 192 is suspended and supported by a hanging pillar portion 193 provided through the central portion of the top plate 12 in the vertical direction. At this time, the central portion of the turntable 2 disposed above the central lateral wall portion 192 is provided with an opening 202 through which the hanging pillar portion 193 penetrates, so that the central lateral wall portion 192 is not suspended The hanging support column portion 193 of the hanging support hinders the rotation operation of the turntable 2 (FIG. 3 ).

In addition, the diameter of the central lateral wall portion 192 is smaller than the diameter of the opening of the peripheral lateral wall portion 191. Between the outer peripheral surface of the central lateral wall portion 192 and the inner peripheral surface of the peripheral lateral wall portion 191, An annular slot 32 in which the spaces above and below the two lateral wall portions 191 and 192 communicate with each other.

With the above configuration, the internal space of the vacuum container 11 is divided up and down, the upper side space of the peripheral side lateral wall portion 191 and the central side side wall portion 192 accommodates the turntable 2, and the lower side space accommodates The support plate 42 (FIG. 1) which supports this turntable 2 etc.

Further, as shown in FIG. 1, the upper surface of the peripheral lateral wall portion 191 is formed with a circular recessed portion 311 as viewed from the upper surface side, and the upper surface of the central lateral wall portion 192 is formed with a circular shape as viewed from the upper surface side形的沉部312。 Shaped recess 312. A heater 33 for heating the wafer W placed on the upper side of the turntable 2 is provided in the recesses 311 and 312. Although the heater 33 is configured by arranging a plurality of heater elements composed of, for example, an elongated tubular carbon wire heater into a circular ring shape, it is shown only briefly in FIG. 1 and the like.

The heater 33 for the central lateral wall portion 192 is supplied with power through, for example, a power supply line 331 provided in the hanging pillar portion 193. On the other hand, the heater 33 for the peripheral lateral wall portion 191 is supplied with power through the side wall etc. which penetrates the container body 13 Line (not shown) to supply power.

The space in the recesses 311 and 312 provided with the heater 33 is supplied with N ₂ gas through a gas nozzle (not shown) to suppress the entry of processing gas and the like. In addition, the opening on the upper surface side of each concave portion 311 and 312 is closed by the cover plate 34.

In addition, the bottom side of the peripheral side lateral wall portion 191 or the central side lateral wall portion 192 in which the heater 33 which becomes high temperature is formed is provided for cooling to constitute the peripheral side lateral wall portion 191 or the central side lateral wall The refrigerant flow path 313 in which the refrigerant of the component of the unit 192 flows. The N ₂ gas or refrigerant is also supplied through the N ₂ gas flow path and the refrigerant supply path (not shown) formed in the side wall of the hanging pillar portion 193 or the container body 13.

Furthermore, as shown in the enlarged longitudinal cross-sectional view of FIG. 1 or FIG. 4, a lower surface of the turntable 2 is formed between a peripheral side region of the lower surface of the turntable 2 and a peripheral side region of the upper surface of the peripheral side lateral wall portion 191. A plurality of circular ring-shaped protrusions and grooves are combined with a circular ring-shaped plurality of protrusions and grooves formed on the upper surface of the peripheral side wall 191 to form a labyrinth seal 27. The labyrinth seal portion 27 prevents various processing gases supplied to the upper side of the turntable 2 from entering the space on the lower side of the turntable 2, and even if particles are generated due to the bearing unit 43 and the like described below, the particles The space above the turntable 2 enters.

Furthermore, as shown in FIG. 2, the exhaust ports 35 and 36 for exhausting inside the vacuum container 11 are formed on the outer side of the turntable 2 in the space above the peripheral side lateral wall portion 191 and the central side lateral wall portion 192 Opening. The exhaust ports 35 and 36 are connected to a vacuum exhaust mechanism (not shown) composed of a vacuum pump or the like.

Next, the related structure of the turntable 2 will be described in detail while referring to FIG. 3.

The upper surface side (one surface side) of the turntable 2 is provided with a wafer holder 24 having a circular planar shape along the rotation direction of the turntable 2. A recess 25 is formed on the upper surface of the wafer holder 24, and the wafer W is horizontally accommodated in the recess 25. The wafer holder 24 corresponds to the mounting table of the wafer W.

Below the rotary table 2, a plurality of roots are provided at intervals in the circumferential direction, extending vertically downward from the position corresponding to the slot 32 when viewed from the center of the rotary table 2 Pillar 41. As shown in FIG. 1, each pillar 41 passes through the slot 32 and is connected to a support portion (ie, support plate 42) housed in the space below the peripheral side lateral wall portion 191 and the central side lateral wall portion 192.

As shown in FIGS. 1 and 3, the center portion of the lower surface side of the support plate 42 is connected to the upper end portion of the rotating shaft 21. Therefore, when the rotary shaft 21 is rotated, the rotary table 2 will rotate around the vertical axis through the support plate 42 and the support 41.

Next, the related structure of the wafer holder 24 will be described.

The central portion of the lower surface of each wafer holder 24 is provided with a rotation shaft 26 extending vertically downward to support the wafer holder 24. The rotation shaft 26 is inserted into the opening 201 provided in the turntable 2 and further penetrates the slot 32, and is supported by the bearing unit 43 fixed to the support plate 42. As a result, the wafer holder 24 is independent from the turntable 2 and is supported by the support plate 42 through the rotation shaft 26.

The bearing unit 43 is provided with a bearing that rotatably holds the rotating shaft 26, and a magnetic seal (both not shown) for preventing scattering of particles from the bearing. The lower side of the rotation shaft 26 penetrates through the bearing unit 43 and extends to the lower surface side of the support plate 42, and the lower end portion thereof is provided with a passive gear portion 45 described later.

Here, as shown in FIGS. 1 and 4, the peripheral side area of the lower surface of the support plate 42 is arranged so as to protrude laterally from the inner wall surface of the container body 13 toward the central portion side of the container body 13. The upper part of the protrusion 194 is opposed. Between the support plate 42 and the protrusion 194, a plurality of circular protrusions and grooves formed on the lower surface of the support plate 42 and a plurality of circular rings formed on the upper surface of the protrusion 194 are provided The labyrinth seal portion 46 constituted by combining the protruding portion and the groove portion.

In addition, a cylindrical wall portion 47 extending from the lower surface of the support plate 42 toward the lower side is formed inside the labyrinth seal portion 46. The cylindrical wall portion 47 is inserted into the inside of the protrusion 194, and a narrow gap is formed between the outer circumferential surface of the cylindrical wall portion 47 and the inner circumferential surface of the protrusion 194.

The labyrinth seal portion 46 or the cylindrical wall portion 47 prevents various processing gases from entering the space below the support plate 42 from the upper surface side of the support plate 42, and even if particles are generated by the bearing unit 43 or the rotation driving portion 53 described later Situation, the particles can still be suppressed toward the support The space above the plate 42 enters.

Further, other related structures of the vacuum container 11 will be described. As shown in FIG. 2, the side wall of the container body 13 is provided with a transfer port 37 for wafer W, and a gate valve 38 that opens and closes the transfer port 37. The external transport mechanism is introduced into the vacuum container 11 through the transport port 37 to transfer the wafer W between the transport mechanism and the wafer holder 24. Specifically, when the wafer holder 24 is moved to a position opposed to the loading/unloading inlet 37, the bottom surface of the concave portion 25 and the peripheral side lateral wall portion 191 that penetrate each wafer holder 24 in the vertical direction , The through hole of the support plate 42 and the bottom of the container body 13. Then, it is configured that the upper end of the lifting pin is raised and lowered between the upper surface side of the recess 25 and the lower side of the support plate 42 by using the lifting pins that move up and down in each through hole. The wafer W is transferred through the lift pins. In addition, illustration of the pin and each through hole is omitted.

In addition, as shown in FIGS. 1 and 2, on the upper side of the turntable 2, a source gas nozzle 61, a separation gas nozzle 62, an oxidation gas nozzle 63, an electric The gas nozzle 64 and the separation gas nozzle 65 for slurry generation. Each of the gas nozzles 61 to 65 is formed in a rod shape extending horizontally along the radial direction of the turntable 2 from the side wall of the vacuum vessel 11 toward the center, and is provided from a plurality of spaced apart along the radial direction The ejection port 66 ejects various gases toward the lower side.

The raw material gas nozzle 61 emits the BTBAS (bis(tert-butylamino) silane) gas. In FIG. 2, reference numeral 67 is a nozzle cover that covers the raw material gas nozzle 61, and is formed in a fan shape that widens from the raw material gas nozzle 61 toward the upstream side and the downstream side in the rotation direction of the turntable 2. The nozzle cover 67 has a function of increasing the concentration of the BTBAS gas below it to increase the adsorption of the BTBAS gas to the wafer W. In addition, the oxidizing gas nozzle 63 ejects the ozone gas. The separation gas nozzles 62 and 65 emit N ₂ gas, and are arranged at positions where the fan-shaped protrusions 17 and 17 of the top plate 12 are divided in the circumferential direction when viewed from the upper side.

A plasma generating gas nozzle 64 will discharge plasma of argon (Ar) gas and oxygen (O ₂₎ gas of a mixed gas consisting of, for example generating gas.

Furthermore, the top plate 12 is provided with a fan-shaped opening along the rotation direction of the turntable 2 The mouth is provided with a plasma forming portion 71 that closes the opening. The plasma forming portion 71 has a cup-shaped body portion 710 composed of a dielectric material such as quartz, and the opening portion on the top plate 12 side is closed by the body portion 710. Viewed from the rotation direction of the turntable 2, the plasma forming portion 71 is provided between the oxidizing gas nozzle 63 and the protruding portion 17. In FIG. 2, the position where the plasma forming portion 71 is provided is shown by a dotted line.

The lower surface side of the body portion 710 is provided with a protruding portion 72 (see FIG. 1) protruding downwardly along the fan-shaped opening. The front end of the plasma generating gas nozzle 64 is inserted into the area surrounded by the protruding portion 72 from the outer peripheral side of the turntable 2 in such a manner that gas can be ejected into the area surrounded by the protruding portion 72 Inside. The protruding portion 72 has a function capable of suppressing the entry of N ₂ gas, ozone gas, and BTBAS gas toward the lower side of the plasma forming portion 71, and suppressing the decrease in the concentration of the plasma generating gas.

A concave portion is formed on the upper surface side of the body portion 710 of the plasma forming portion 71, and a box-shaped Faraday shield plate 73 that is open toward the upper surface side is disposed in the concave portion. The bottom of the Faraday shielding plate 73 is provided with an insulating plate assembly 74 interposed therebetween, and an antenna 75 is provided in which a metal wire is wound into a coil around a vertical axis. The antenna 75 is connected to a high-frequency power source 76.

Furthermore, the bottom surface of the Faraday shielding plate 73 is formed with a slot 77 for preventing the electric field component of the electromagnetic field generated at the antenna 75 from facing downward when the high frequency is applied to the antenna 75, and directing the magnetic field component to the downward direction. As shown in FIG. 2, the slots 77 extend in a direction orthogonal (cross) to the winding direction of the antenna 75, and are formed in plural along the winding direction of the antenna 75.

Using the plasma forming section 71 having the above-mentioned configuration, and turning on the high-frequency power supply 76 to apply high frequency to the antenna 75, the plasma generating gas supplied below the plasma forming section 71 can be made into a plasma.

In addition, for convenience of illustration, in the enlarged longitudinal sectional view of FIG. 4, the description of the plasma forming portion 71 and the plasma generating gas nozzle 64 and the refrigerant flow path 313 below it is omitted.

On the turntable 2, the area below the nozzle cover 67 of the source gas nozzle 61 is an adsorption area R1 for adsorbing a source gas (BTBAS gas), and the area below the oxidizing gas nozzle 63 is BTBAS using ozone gas Oxidation area R2 of gas oxidation. In addition, the area below the plasma forming portion 71 is a plasma forming area R3 in which the SiO ₂ film is modified by the plasma. The areas below the protrusions 17 and 17 constitute a separation area D that separates the adsorption area R1 and the oxidation area R2 from each other by the N ₂ gas ejected from the separation gas nozzles 62 and 65 to prevent mixing of the raw material gas and the oxidation gas. D.

Here, the exhaust port 35 provided in the container body 13 is opened outside between the adsorption region R1 and the separation region D adjacent to the downstream side in the rotation direction with respect to the adsorption region R1 to remove the remaining BTBAS Gas exhaust. In addition, the exhaust port 36 is opened outside the boundary between the plasma forming region R3 and the separation region D adjacent to the downstream side in the rotation direction with respect to the plasma forming region R3, and the remaining O ₃ gas and Plasma gas exhaust. The N ₂ gas supplied from each separation area D and the central area forming portion C of the turntable 2 is also exhausted from each exhaust port 35 and 36.

In the film forming apparatus 1 having the above-described configuration, when the rotary table 2 is rotated to revolve the wafer W placed on the wafer holder 24 around the rotation axis 21 extending in the vertical direction, each wafer holder 24 can rotate around the rotation axis 26 that supports the central portion of the lower side of the wafer holder 24 and extends in the vertical direction.

Hereinafter, the details of the mechanism for rotating the wafer holder 24 will be described while referring to FIGS. 4 and 5.

As shown in FIGS. 4 and 5, the lower end portions of the respective rotating shafts 26 penetrating the bearing unit 43 are connected to the upper surface of the flat cylinder (passive gear portion 45) in a state where the central axes of the shafts coincide with each other. Therefore, the passive gear portion 45 is connected to the wafer holder 24 through the rotation shaft 26. In addition, since the bearing unit 43 rotatably holds the rotation shaft 26, when the driven gear portion 45 is rotated in the circumferential direction, each wafer holder 24 can rotate around the rotation shaft 26.

As shown in FIG. 5, a plurality of permanent magnets 450 are arranged at intervals on the side peripheral surface of the driven gear portion 45. The permanent magnets 450 are alternately arranged in such a way that the polarities (N pole surface 451 and S pole surface 452) exposed between the adjacent permanent magnets 450 and 450 and exposed on the side peripheral surface of the passive gear portion 45 are different . Also, it is exposed on the side peripheral surface of the driven gear portion 45 The N pole surface 451 and the S pole surface 452 are formed, for example, in a short shape in which the side peripheral surface extends in the up-down direction from the upper end edge toward the lower end edge. The side peripheral surface of the passive gear portion 45 on which the plural permanent magnets 450 are arranged corresponds to the passive surface of the passive gear portion 45.

Since the self-rotating shaft 26 connected to the driven gear portion 45 is supported on the supporting plate 42 common to the rotary table 2, when the rotary table 2 is rotated, the respective rotary shafts 26 will also follow the slot 32 around the rotary shaft 21 revolutions. As a result, the passive gear portion 45 provided at the lower end of the rotation shaft 26 also moves along the moving rail O corresponding to the slot 32 (refer to the moving rail O shown in broken lines in FIGS. 6 to 8 ).

As shown in FIG. 4, the bottom of the container body 13 located below the support plate 42 is provided with a drive gear portion 51 which is a circular plate to rotate the driven gear portion 45 in the circumferential direction. The driving gear portion 51 is arranged at a position where the surface of the circular plate is opposite to the side peripheral surface (passive surface) of the passive gear portion 45 when the passive gear portion 45 passes the preset position on the moving rail O Office.

As shown in FIG. 5, a plurality of permanent magnets 510 are arranged at intervals on the one side of the drive gear portion 51. The permanent magnets 510 are alternately arranged in such a way that the polarities (N pole surface 511 and S pole surface 512) exposed on one side of the driving gear portion 51 between the adjacent permanent magnets 510 and 510 are different.

In addition, the N pole surface 511 and the S pole surface 512 exposed on one surface of the drive gear portion 51 are N pole surfaces 451 and S formed by the side peripheral surfaces of the passive gear portion 45 passing through the area facing the one surface The shapes of the pole faces 452 overlap so as to form a fan shape that widens in the radial direction from the central portion of one surface of the circular drive gear portion 51 toward the peripheral portion. The surface on which the driving gear portion 51 of the plural permanent magnets 510 is arranged corresponds to the driving surface of the driving gear portion 51.

In addition, in the driving gear portion 51, one end of the driving shaft 52 is connected to the central portion of the opposite side surface on which one surface of the permanent magnet 510 is disposed. The other end of the drive shaft 52 is provided with a rotation drive unit 53. By using the rotation drive unit 53 to rotate the drive shaft 52, the drive gear unit 51 can be rotated around the center of rotation. Here, as shown in FIG. 5, the drive shaft 52 of the drive gear portion 51 is arranged to extend in a direction crossing the rotation shaft 26 connected to the driven gear portion 45.

In addition, the rotation driving portion 53 can move the front end position of the driving shaft 52 connected to the driving gear portion 51 forward and backward. As a result, as indicated by the broken line in FIG. 4, the distance between one surface (driving surface) of the driving gear portion 51 and the side peripheral surface (passive surface) of the driven gear portion 45 can be adjusted. The rotation drive unit 53 capable of moving the front end position of the drive shaft 52 also has the function of the position adjustment unit of the present embodiment.

The driving gear portion 51 is arranged when the driven gear portion 45 passes through the position opposite to the driving gear portion 51, the side peripheral surface of the driven gear portion 45 passes through a height higher than the central portion of one surface of the driving gear portion 51 Location. As a result, as shown in FIG. 5, the permanent magnet 450 formed in the driven gear portion 45 and the permanent magnet 510 formed in the drive gear portion 51 will approach, and between the N pole surface 511 and the S pole surface 452, or S A strong magnetic field line M is formed between the pole surface 512 and the N pole surface 451.

Then, for example, by rotating the driving gear portion 51 (moving the driving surface) in such a manner that the permanent magnet 510 of the driving gear portion 51 will move in the opposite direction to the moving direction of the permanent magnet 450 of the passive gear portion 45, the magnetic field lines M moves to rotate the driven gear portion 45. As a result, the rotation of the driven gear portion 45 can be transmitted to the wafer holder 24 through the rotation shaft 26 to rotate the wafer holder 24.

The passive gear portion 45 and the driving gear portion 51, the rotation shaft 26 connecting the passive gear portion 45 and the wafer holder 24, the driving shaft 52 driving the driving gear portion 51, the rotation driving portion 53, and the like constitute the present embodiment. Magnetic gear mechanism.

Furthermore, as shown in FIGS. 3 and 4, the bottom surface of the support plate 42 is provided with a part of the side peripheral surface surrounding the bearing unit 43 protruding from the lower surface of the support plate 42, the rotation shaft 26, and the driven gear portion 45. The side wall portion 44 of the semi-cylindrical shape. The side wall portion 44 is provided so as to surround the side peripheral surface of the driven gear portion 45 opposite to the direction in which the drive gear portion 51 is arranged.

The lower portion of the inner peripheral surface of the side wall portion 44 is provided with a semi-circular stopper portion 441 made of, for example, a ferromagnetic material. Then, the magnetic force line formed between the permanent magnet 450 and the stop portion 441 of the passive gear part 45 is weaker than the magnetic force line formed between the passive gear part 45 and the driving gear part 51 to adjust, for example, the passive gear part The distance between the side peripheral surface of 45 and the stopper 441 and the like.

As a result, when the driven gear portion 45 passes through the position opposed to the driving gear portion 51, the urging force between the driven gear portion 45 and the driving gear portion 51 acts, so that the driven gear portion 45 can rotate. On the other hand, after passing through this position, the force between the driven gear portion 45 and the braking portion 441 can suppress the free rotation of the driven gear portion 45 due to inertial force or the like. The inner peripheral surface of the stopper portion 441 surrounding the side peripheral surface of the driven gear portion 45 corresponds to a stopper surface for stopping the rotation of the driven gear portion 45.

As shown in FIG. 1, the film forming apparatus 1 having the configuration described above is provided with a control unit 100 configured with a computer for controlling the overall operation of the apparatus. The control unit 100 stores a program for performing a film-forming process described later. This program will send the control signal to each part of the film forming apparatus 1 to control the operation of each part. Specifically, the supply flow rate of each process gas and the like from each gas nozzle 61 to 65, the heating temperature of the wafer W by the heater 33, the supply flow rate of N ₂ gas from the central region forming portion C, and revolution for revolution The number of rotations per unit time of the turntable 2 caused by the driving unit 22, the rotation angle of the wafer holder 24 caused by the magnetic gear mechanism, etc. are controlled according to the control signal. The above-mentioned program includes a group of steps that perform these controls to implement each process described later. The program is installed in the control unit 100 from memory media such as hard disks, optical disks, magneto-optical disks, memory cards, and floppy disks.

Hereinafter, the operation of the film forming apparatus 1 having the above-mentioned configuration will be described.

First, while rotating the turntable 2 intermittently, each wafer holder 24 is moved to a position opposite to the entrance/exit 37, and the wafer W is transferred into vacuum from the outside by a transfer mechanism (not shown) The container 11 is transferred to the wafer holder 24.

After all wafer holders 24 are loaded with wafers W, the transport mechanism is withdrawn from the vacuum container 11 and the gate valve 38 is closed, and vacuum exhaust is performed through the exhaust ports 35 and 36 to make the inside of the vacuum container 11 specific pressure. In addition, N ₂ gas is supplied to the turntable 2 from the separation gas nozzles 62 and 65 and the central region forming portion C, and the heating of the wafer W is started by the heater 33.

Next, by rotating the rotation shaft 21 by the rotation drive unit 22 for revolution, the rotation of the turntable 2 starts the revolution of the wafer W placed on each wafer holder 24. As the rotating table 2 rotates, the driving gear portion disposed at the bottom of the container body 13 The rotation of 51 will also start.

The above operations are started in the vacuum vessel 11, and the supply of each processing gas from the raw material gas nozzle 61, the oxidizing gas nozzle 63, and the plasma generating gas nozzle 64 and the high frequency from the high-frequency power supply 76 to the antenna 75 are started. The formation of plasma caused by the application of.

As shown in FIG. 2, in the vacuum vessel 11, a separation region D to be supplied with N ₂ gas is provided between the adsorption region R1 and the oxidation region R2, so the raw material gas supplied to the adsorption region R1 and supplied The oxidizing gas to the oxidation area R2 will not be mixed with each other on the turntable 2 but will be exhausted from the exhaust ports 35 and 36. In addition, since the separation region D that is supplied with N ₂ gas is also provided between the adsorption region R1 and the plasma formation region R3, the raw material gas, the plasma generation gas supplied to the plasma formation region R3, and The oxidizing gases upstream of the rotation direction of the slurry forming region R3 toward the separation region D are not mixed with each other on the rotary table 2 but are exhausted from the exhaust ports 35 and 36. In addition, the N ₂ gas supplied from the central region forming portion C is also exhausted through the exhaust ports 35 and 36.

In the state where each gas is supplied and exhausted as described above, each wafer W sequentially passes through the adsorption region R1, the oxidation region R2, and the plasma formation region R3. At the adsorption region R1, the BTBAS gas ejected from the raw material gas nozzle 61 is adsorbed on the wafer W, and at the oxidation region R2, the adsorbed BTBAS gas is oxidized by the O ₃ gas supplied from the oxidation gas nozzle 63 to One or more molecular layers of SiO ₂ are formed. At the plasma formation region R3, the molecular layer of SiO ₂ is exposed to the plasma and is modified.

Then, by rotating the rotary table 2, the above-mentioned cycle is repeated a plurality of times, whereby a molecular layer of SiO ₂ is stacked, and an SiO ₂ film is formed on the surface of the wafer W.

During the above-described film formation process, when the turntable 2 is rotated, the passive gear portion 45 connected to the specific wafer holder 24 moves along, for example, the moving rail O shown in the schematic diagram of FIG. 6. At this time, when the passive gear portion 45 passing through the area facing the driving gear portion 51 is viewed from the upper side, the solid-line arrow attached to the upper surface of the passive gear portion 45 faces a specific direction.

Furthermore, when the driven gear portion 45 moves to reach the area facing the drive gear portion 51 as shown in FIG. 7, the permanent magnet 510 of the rotary drive portion 53 and the driven gear portion The effect of the magnetic field lines M formed between the permanent magnets 45 of 45 will become greater. At this time, since the driving gear portion 51 rotates in such a manner that the permanent magnet 510 moves in the direction opposite to the moving direction of the permanent magnet 450 (passive gear portion 45), the passive gear portion 45 follows the movement of the magnetic force line M Rotation (in the example of FIG. 7, it is rotated counterclockwise when viewed from the upper side).

As a result, as shown in FIG. 8, while passing through the area facing the driving gear portion 51, the driven gear portion 45 will only rotate from the direction of the arrow indicated by the broken line to the direction of the arrow indicated by the solid line Specific angle. Along with the rotation of the passive gear portion 45, the wafer holder 24 connected to the passive gear portion 45 rotates around the rotation shaft 26.

Then, after the passive gear portion 45 passes through the area opposed to the driving gear portion 51, the rotation of the passive gear portion 45 (rotation shaft) is stopped due to the magnetic force line acting between the passive gear portion 45 and the stop portion 441 26's rotation).

The rotation angle of the passive tooth transmission part 45 (the rotation angle of the rotation shaft 26) in the above operation can be determined by the number of rotations per unit time of the driving gear part 51, or the position of the driving gear part 51 opposite to the driving gear part 51 At this time, the distance between the drive gear 51 and the driven gear 45 is adjusted. Here, if the distance between the driving gear portion 51 and the driven gear portion 45 is smaller, the magnetic force lines M formed between the permanent magnets 510 and 450 are stronger.

For example, as the number of rotations per unit time of the rotary table 2 increases, the time for the passive gear portion 45 to pass through the position opposed to the driving gear portion 51 becomes shorter. In this case, by moving the driving gear portion 51 to reduce the distance from the driven gear portion 45, a stronger magnetic force line M can act to maintain the rotation angle of the driven gear portion 45 (the rotation angle of the rotation shaft 26) As expected.

Along with the above-mentioned operation, whenever the passive gear portion 45 connected to each wafer holder 24 passes through a region opposed to the drive gear portion 51, the wafer holder 24 will only rotate by a specific rotation angle. Therefore, the wafer W placed on each wafer holder 24 will be accompanied by the rotation of the wafer holder 24, and while gradually changing the direction viewed from the upper side, the cycle of forming the above-mentioned molecular layer of SiO ₂ is performed . In this way, by forming the film while changing the direction of the wafer W, even if, for example, the concentration distribution of the raw material gas in the adsorption region R1 varies, a plurality of SiO ₂ molecular layer formation cycles are performed When viewed over the entire period, the amount of the raw material gas adsorbed on the wafer W can be made uniform in the circumferential direction of the wafer W. As a result, when viewed in the circumferential direction of the wafer W, variations in the film thickness of the SiO ₂ film formed on the wafer W can be suppressed.

Through the above operations, the molecular layers of SiO ₂ are sequentially deposited, and when the SiO ₂ film having a desired film thickness is formed, the rotation of the turntable 2 or the supply of various processing gases and the formation of plasma are stopped , And the film forming process ends. After that, the pressure in the vacuum container 11 is adjusted, and the gate valve 38 is opened to allow the external transport mechanism to enter, and the wafer W is transported out in the reverse order of the step at the time of transport.

According to the film forming apparatus 1 according to this embodiment, the following effects are achieved. When the wafer W placed on one side of the turntable 2 is revolved while various processing gases are supplied to the wafer W to perform the film forming process, the arrangement of the drive gear portion 51 side is changed by using the magnetic force lines M (The rotation of the drive gear portion 51) is transmitted to the magnetic gear mechanism on the side of the passive gear portion 45 to rotate the wafer holder 24 on which the wafer W is placed, so the uniformity of the film forming process can be improved in the circumferential direction of the wafer W Sex. At this time, by using the non-contact magnetic gear mechanism, the generation of particles due to the above-mentioned rotation action is suppressed.

Here, the configurations of the drive gear portion 51 and the driven gear portion 45 of the magnetic gear mechanism are not limited to the examples shown in FIG. 5 and the like.

For example, in the example shown in FIG. 9, the passive gear portion 45 a with a plurality of permanent magnets 450 (N pole surface 451 and S pole surface 452) disposed on one side of the circular plate is arranged at the lower end of the rotation shaft 26. The one side (passive side) is arranged toward the lower side. On the other hand, a plurality of permanent magnets 510 (N-pole surface 511 and S-pole surface 512) are arranged on the drive gear portion 51a on the side peripheral surface of the cylinder at intervals. The driving gear portion 51a is configured such that when the driven gear portion 45a passes a specific position on the moving rail O, the side peripheral surface (driving surface) of the driving gear portion 51a faces the lower side of the driven gear portion 45a. In this case, for example, the rotation drive unit 53 is raised and lowered to adjust the interval between the drive gear unit 51a and the driven gear unit 45a.

Also, it is not necessary to constitute the driving gear portion 51 by a combination of a cylinder and a circular plate, 51a and the driven gear parts 45, 45.

As shown in FIG. 10, the driving gear portion 51b and the driven gear portion 45b may also be constituted by a cylinder, and when the driven gear portion 45b passes a specific position on the moving rail O, the side circumferences of the gear portions 51b, 45b The drive gear portion 51b is arranged so that the surfaces face each other. In this case, for example, the rotational driving portion 53 is moved laterally to adjust the interval between the driving gear portion 51b and the driven gear portion 45b.

In addition, the movement of the driving surface of the driving gear portion is not limited to the situation caused by the rotation of the circular plate or the cylinder. For example, a straight rod-shaped shelf-type drive gear (not shown) formed by expanding the side peripheral surface of the drive gear portion 51b shown in FIG. 10 into a flat surface may also be used. In this case, the side surface (driving surface) of the shelf type driving gear can be opposed to the side peripheral surface of the driven gear portion 45b, and the driving surface can be moved by moving the driving gear back and forth in the longitudinal direction.

In more detail, after the passive gear portion 45b to be rotated moves to a position opposed to the shelf-type driving gear, the driving gear is moved to the direction in which the passive gear portion 45b rotates. Then, after the driven gear portion 45b is away from the position facing the driving gear, the operation of moving the driving gear to the original position is repeated until the next time the driven gear portion 45b approaches. By the above-mentioned operation, each driven gear portion 45b can also be rotated only by a specific angle at a time.

In addition, the driving gear and the passive gear of the magnetic gear mechanism do not necessarily need to be provided with permanent magnets 510 and 450, and only one of them may be provided with permanent magnets 510 and 450, and the ferromagnetic material constitutes the other. FIG. 11 is provided with a permanent magnet 510 on the driving gear portion 51c side, and the passive gear portion 45c side is composed of, for example, stainless steel having strong magnetism. If the permanent magnet 450 is not provided on the passive gear portion 45c side, it is sufficient if the rotation of the passive gear portion 45c can be stopped by using the braking portion 441 including the braking surface provided with the permanent magnet.

Also, it is not necessary to construct the passive gear by ferromagnetic material. For example, if the passive gear portion 45b shown in FIG. 10 is made of a conductive material not provided with a permanent magnet 450, when the driving gear portion 51b where the N pole surface 511 and the S pole surface 512 are alternately arranged rotates, Then, an eddy current flows on the side peripheral surface of the driven gear portion 45b. borrow The interaction between the magnetic field generated by the eddy current and the magnetic field on the drive gear portion 51b side can also rotate the passive gear portion 45b. In this case, the passive gear portion 45b may be formed of a paramagnetic material such as aluminum.

Here, the shapes of the permanent magnets 510 and 450 exposed on the surfaces of the driving gear and the driven gear which are cylindrical or circular plates are not limited to the examples illustrated in FIGS. 5, 9 to 11. For example, the N pole surface 511 and the S pole surface 512 of the sector permanent magnet 510 on one surface of the driving gear portion 51 shown in FIG. 5 or the N of the short grid permanent magnet 450 on the side peripheral surface of the passive gear portion 45 may also be used. The shapes of the pole face 451 and the S pole face 452 are appropriately changed.

In addition, it is not necessary to alternately arrange the N-pole surfaces 511 and 451 and the S-pole surfaces 512 and 452 having different polarities. For example, the N-pole surface 511 or the S-pole surface 512 may be exposed on the same surface (driving surface) of the driving gear portion 51 in FIG. 5, and the S-pole surface 452 or N having a polarity different from the side of the driving gear portion 51 The pole surface 451 is similarly exposed on the side peripheral surface (passive surface) of the passive gear portion 45. In this case, the driven gear portion 51 can still rotate to move the magnetic force line M to rotate the driven gear portion 45.

Of course, the plane shape of the driving gear 51 shown in FIG. 5 may also be configured as an ellipse or a quadrangle, or the width dimension of the side peripheral surface of the driven gear 45 may be changed in the circumferential direction, etc., to form a deformed driving surface or Passive side.

Then, the arrangement position or the number of arrangement of the drive gear parts when viewed from the upper side is not particularly limited, and can be adjusted freely.

Then, for example, using the example illustrated in FIGS. 6 to 8, it is not necessary to rotate the driving gear portion 51 in such a manner that the permanent magnet 510 moves in the opposite direction of the moving direction of the permanent magnet 450 (passive gear portion 45 ). Essentials. For example, it may be rotated in the opposite direction (clockwise direction) to the direction shown in these figures (counterclockwise as viewed from one side of the drive gear portion 51). When the relative moving speed of the permanent magnet 510 is greater than the moving speed of the permanent magnet 450, the passive gear part 45 rotates clockwise when viewed from the upper side, and when the relative moving speed is small, the passive gear part 45 moves from When viewed from above, it rotates counterclockwise.

Furthermore, here, it is not necessary to divide the space above and below by the support plate 42 which supports the wafer holder 24, but it is also possible to use spokes from the rotation shaft 21 side, for example Extending to support the wafer holder 24.

In addition, when the wafer holder 24, the rotation shaft 26, the bearing unit 43, etc. are lighter, of course, it is also possible to replace the method of independently supporting the wafer holder 24 from the rotary table 2 such as the support plate 42, and The bearing unit 43 is directly mounted on the turntable 2 and the wafer holder 24 is supported by the turntable 2. In addition, when the wafer holder 24 is supported by the turntable 2, it is preferable to set the process temperature of the film forming process to 200°C or lower. As an example of the above-mentioned configuration, for example, a cylindrical body provided with an opening edge whose upper end is connected to the through hole of the rotation shaft 26 in the turntable 2 and extending to the lower side of the heater 33 can pass through a bearing A structure in which the rotation shaft 26 is installed in the cylindrical body, and the driven gear portion 45 is provided below the rotation shaft 26.

In addition to the above matters, the present invention can be applied to various substrate processing apparatuses that perform gas processing on the wafer W placed on the turntable 2. Therefore, it is not limited to being applied to a film forming apparatus that performs ALD, but can also be applied to a film forming apparatus that performs CVD. Moreover, it is not limited to application to a film forming apparatus. For example, the present invention can also be applied to the above-mentioned film forming apparatus 1 without performing the supply of the raw material gas and the oxidizing gas using the gas nozzles 61 and 63, but only performing the modification process of the surface of the wafer W using the plasma forming portion 71 Modification device.

Hereinafter, the relationship between the rotation speed (revolution number) (rpm) of the rotation of the drive gear portion 51 with respect to the wafer holder 24 and the rotation speed (revolution speed) (rpm) of the revolution of the turntable 2 will be described. In addition, although the film forming apparatus 1 uses an example in which the driving gear part 51a that rotates around the horizontal axis shown in FIG. 9 and the passive gear part 45a that rotates around the vertical axis are used, the driving gear part 51 and the passive gear part 45 It can be applied that the driving surface rotates around the central axis and moves in the direction of rotation. Moreover, the rotating table 2 rotates clockwise when viewed from above, and the central gear direction when viewed from the outer peripheral side of the rotating table 2, the drive gear portion 51a rotates counterclockwise.

For example, when the rotary table 2 and the drive gear portion 51a are rotated, the circumferential speed of the passive surface of the passive gear portion 45a due to the revolution of the rotary table 2 and the circumferential speed of the passive surface of the drive gear portion 51a are consistent .

The peripheral speed of the passive surface of the passive gear portion 45a is the radius of rotation of the passive surface of the passive gear portion 45a when the turntable 2 revolves (from the center of the turntable 2 to the passive gear portion) The distance of the passive surface of 45a) is multiplied by the revolution speed. In addition, the peripheral speed of the driving surface of the driving gear portion 51a is the speed of multiplying the rotational radius of the driving surface (the distance from the central axis of the driving gear portion 51a to the driving surface) by the rotational speed of the driving gear portion 51a.

Then, in the film forming apparatus 1 described above, for example, when the rotational speed of the driving gear portion 51a is 190 rpm and the rotational speed of the turntable 2 is 10 rpm, the peripheral speed of the passive surface of the passive gear portion 45a and the driving surface of the driving gear portion 51a The weekly speed will be consistent.

In this case, as shown in FIG. 12, the passive gear portion 45a is rotated by the revolution of the turntable 2. When the driven gear portion 45a is closest to the driving gear portion 51a, if the driving surface of the driving gear portion 51a becomes permanent If the magnet 510 and the NS (for example, the N pole surface 511 and the S pole surface 452) in the permanent magnet 450 on the passive surface of the passive gear portion 45a face each other, the passive gear portion 45a will not be applied with the rotation axis 26 as the center The force in the direction of rotation without rotating. If the driving gear portion 51a and the NS of the driven gear portion 45a do not face each other, the driven gear portion 45a will rotate to the opposite position due to the attractive force and reaction force caused by the magnetic force, and will not rotate again thereafter. That is, after the passive gear portion 45a is closest to the driving gear portion 51a once, it will not rotate, and the wafer holder 24 will not rotate (the rotation angle is 0°).

On the other hand, when the rotational speed of the driving gear portion 51a is greater than the peripheral speed of the N-pole surface 511 of the driving gear portion 51a relative to the peripheral speed of the passive surface of the passive gear portion 45a, the rotational speed of the driving gear portion 51a ( (Hereinafter referred to as "reference rotation speed") When slightly faster, for example, the rotation speed of the drive gear 51a is 190.1 rpm, and the rotation speed of the turntable 2 is 10 rpm.

When the passive gear portion 45a is rotated by the revolution of the turntable 2, the passive gear portion 45a and the driving gear portion 51a are closest to each other, as shown in FIG. 13, the permanent magnet 510 on the driving surface of the driving gear portion 51a and the passive gear portion 45a In the permanent magnet 450 on the passive side, the NS attracts each other or repels the same pole. In addition, since the rotational speed of the driving gear portion 51a is faster than the reference rotational speed, the peripheral speed of the driven surface of the driving gear portion 51a is faster than the peripheral speed of the driving surface of the passive gear portion 45a.

Then, as shown in FIG. 13, for example, the N-pole surface 511 of the driving gear portion 51a rotates earlier than the S-pole surface 452 of the driven gear portion 45a, so the driving gear portion 51a The N pole surface 511 of the magnetic pole M will pull the S pole surface 452 of the driven gear portion 45a toward the front side in the rotation direction of the driving gear portion 51a due to the attractive force of the magnetic field lines M. Further, following the N-pole surface 511 of the drive gear portion 51a, the S-pole surface 512 pushes the S-pole surface 452 of the driven gear portion 45a to the front side in the rotation direction of the drive gear portion 51a due to the reaction force. Therefore, since the S-pole surface 452 of the passive gear portion 45a is applied with a force toward the rotation direction of the turntable 2, when viewed from above with the rotation shaft 26 as the center, the passive gear portion 45a rotates clockwise , And the wafer holder 24 will also rotate clockwise.

In contrast, when the rotation speed of the drive gear portion 51a is slightly slower than the reference rotation speed, for example, the rotation speed of the drive gear 51a is 189.9 rpm and the rotation speed of the turntable 2 is 10 rpm.

When the passive gear portion 45a is rotated by the revolution of the turntable 2, the passive gear portion 45a and the driving gear portion 51a are closest to each other, as shown in FIG. 14, the permanent magnet 510 on the driving surface of the driving gear portion 51a and the passive gear portion 45a In the permanent magnet 450 on the passive side, the NS attracts each other or repels the same pole. In addition, since the rotational speed of the driving gear 51a is slower than the reference rotational speed, the peripheral speed of the driven surface of the driving gear portion 51a is slower than the peripheral speed of the driving surface of the driven gear portion 45a.

Therefore, as shown in FIG. 14, for example, the N-pole surface 511 of the driving gear portion 51a is slower than the S-pole surface 452 of the passive gear portion 45a. Therefore, the N-pole surface 511 of the driving gear portion 51a is affected by The gravitational force pulls the S-pole surface 452 of the driven gear portion 45a toward the rear side in the rotation direction of the drive gear portion 51a. In addition, the S-pole surface 512 in front of the N-pole surface 511 of the drive gear portion 51a pushes the S-pole surface 452 of the driven gear portion 45a to the rear side in the rotation direction of the drive gear portion 51a due to reaction force. Therefore, since the S-pole surface 452 of the passive gear portion 45a is applied with a force toward the opposite side of the rotation direction of the turntable 2, when viewed from above with the rotation shaft 26 as the center, the passive gear portion 45a becomes counterclockwise It rotates directionally, and the wafer holder 24 also rotates counterclockwise.

In this way, by increasing and decreasing the rotation speed of the drive gear portion 51a relative to the speed of the turntable 2 from the reference rotation speed, the rotation direction of the wafer holder 24 can be switched in the clockwise direction and the counterclockwise direction. Furthermore, as shown in the embodiment described later When the rotation speed of the movable gear portion 51a is set to a rotation speed range from greater than to less than the reference rotation speed, the rotation speed of the drive gear portion 51a and the rotation angle of the wafer holder 24 (rotation angle) of the wafer holder 24 when the turntable 2 makes one rotation Will be roughly proportional. In addition, when the rotation speed of the drive gear portion 51a is set within a range in which the rotation speed of the drive gear portion 51a and the rotation angle of the wafer holder 24 are approximately in a proportional relationship, the wafer holder 24 for each rotation of the turntable 2 The variation of the rotation angle will be less, and will rotate at a certain interval.

As described above, the reference rotation speed of the drive gear portion 51a is set relative to the rotation speed of the revolution of the turntable 2, and increasing and decreasing the rotation speed of the drive gear portion 51a from the reference rotation speed causes the drive gear portion 51a The rotation speed of φ and the rotation angle of the wafer holder 24 when the turntable 2 rotates once are adjusted within a range that is approximately proportional. Therefore, the rotation angle and rotation direction of the wafer holder 24 when the turntable 2 rotates once can be stably adjusted. By setting the rotation speed of the driving gear portion 51a in this way to stabilize the rotation angle of the wafer holder 24, the rotation angle of the wafer W during the film forming process will be stable, so the in-plane uniformity of the wafer W will also change Well. In addition, since the rotation speed of the driving gear portion 51a is approximately proportional to the rotation angle of the wafer holder 24 when the turntable 2 rotates once, the wafer can be adjusted by adjusting the rotation speed of the driving gear portion 51a W rotation angle (rotation speed).

In addition, the present invention can also be provided with permanent magnets on one side of the passive surface of the passive gear portion 45 and the driving surface of the driving gear portion 51, and on the other side of the passive surface and the driving surface can be provided with The ferromagnetic body that forms this magnetic field line between the magnets. However, the permanent magnets with different polarities are alternately arranged on the passive surface of the passive gear part 45 along the rotation direction of the passive gear portion, and the permanent magnets with different polarities are along the moving direction of the driving surface Since they are alternately arranged on the driving surface of the driving gear portion 51, not only the gravitational force caused by the magnetic field lines M but also the reaction force of the same poles can be used, so the force driving the passive gear portion 45 becomes stable, and the wafer W The rotation angle will be more stable.

In addition, when the passive gear portion 45a is aligned with the position of the driving gear portion 51a, there will be permanent magnets due to the distance between the passive gear portion 45a and the driving gear portion 51a. The strong attraction may not be able to sufficiently attract, and the passive gear part 45a may not fully rotate. Therefore, it is preferable to appropriately set the distance between the driven gear portion 45a and the drive gear portion 51a to stabilize the rotation angle of the wafer holder 24. As shown in the embodiment described later, for example, when the revolution speed of the turntable 2 is 10 rpm, when the distance between the driven surface of the driven gear portion 45 and the driving surface of the driving gear portion 51 is set to 0.5 to 1.0 mm, it is stable It is good to control the rotation angle of the wafer holder 24, especially when it is set to 0.7 to 1.0 mm. In addition, when the revolution speed of the turntable 2 is set to 20 to 30 rpm, by setting the interval between the driven gear portion 45a and the drive gear portion 51a to 1 mm or less, for example, 0.5 mm, the wafer can be stably controlled The rotation angle of the holder 24 is maintained.

[Example]

In order to verify the effect of the above-described embodiment, the following tests were conducted.

In order to investigate the rotation angle of the wafer holder 24 when the orbital rotation speed of the turntable 2 and the rotation speed of the drive gear portion 51a are set separately, the structure provided with the passive gear portion 45a and the drive gear portion 51a shown in FIG. 9 is used The membrane device 1 was set to the revolution speed of the revolving table 2 and the rotation speed of the drive gear portion 51a as shown in Examples 1 to 3, and experiments were conducted. In addition, in Examples 1 to 3, the distance between the driving surface of the driving gear portion 51a and the passive surface of the passive gear portion 45a when the driving gear portion 51a and the passive gear portion 45a are closest is set to 1.0 mm.

(Example 1)

The rotation speed of the turntable 2 is set to 10 rpm, and the rotation speed of the drive gear portion 51a is set to eight rotation speeds of 189.6 to 190.3 rpm at intervals of 0.1 rpm.

(Example 2)

The rotation speed of the turntable 2 is set to 20 rpm, and the rotation speed of the drive gear portion 51a is set to five kinds of rotation speeds of 383.1 to 383.5 rpm at intervals of 0.1 rpm.

(Example 3)

The rotation speed of the turntable 2 is set to 30 rpm, and the rotation speed of the drive gear portion 51 a is set to three kinds of rotation speeds of 574.9 to 575.1 rpm at intervals of 0.1 rpm.

In each of Examples 1 to 3, the rotation rate was measured by high-sensitivity camera photography. Each rotation angle of the five wafer holders 24 when the turntable 2 rotates 10 times is used to measure the rotation angle (°) of the wafer holder 24 when the turntable 2 rotates once. When the "rotation angle" is described below, it refers to the rotation angle of the wafer holder 24 when the turntable 2 rotates once.

15 to 17 show the average value of the rotation speed (rpm) of the drive gear portion 51a when the rotation speed of the turntable 2 is set to 10, 20, and 30 rpm, respectively, and the rotation angle of the five wafer holders 24 (°) A characteristic diagram of the relationship between the average rotation angle after averaging. In addition, the average rotation angle indicates rotation in the clockwise direction with +, and indicates rotation in the counterclockwise direction with -, and the standard deviation indicates the standard deviation of the rotation angle between the five wafer holders 24.

As shown in FIG. 15, when the rotation speed of the turntable 2 is set to 10 rpm, and the rotation speed of the drive gear portion 51 a is set to 190 rpm, the average rotation angle of the wafer holder 24 becomes 0°. In addition, if the rotation speed of the drive gear portion 51a is faster than 190 rpm, the wafer holder 24 will rotate clockwise, and if it is slower than 190 rpm, the wafer holder 24 will rotate counterclockwise. In addition, when the rotational speed of the driving gear portion 51a is in the rotational speed range of 189.6 to 190.3 rpm, the rotational speed of the driving gear portion 51a and the average rotation angle are approximately in a proportional relationship. In addition, when the rotational speed of the drive gear portion 51a is changed from 189.6 to 190.3 rpm, the average rotation angle changes from -10° to +8°, and the standard deviation is also 1 or less, which is very small.

As shown in FIG. 16, when the rotation speed of the turntable 2 is set to 20 rpm, and the rotation speed of the drive gear portion 51 a is set to 383.3 rpm, the average rotation angle of the wafer holder 24 becomes 0°. Moreover, by making the rotation speed of the drive gear part 51a faster than 383.3 rpm, the wafer holder 24 will rotate clockwise, and by slower than 383.3 rpm, the wafer holder 24 will rotate counterclockwise. In addition, when the rotation speed of the drive gear portion 51a is in the rotation speed range of 383.1 to 383.5 rpm, the rotation speed of the drive gear portion 51a and the average rotation angle are approximately in a proportional relationship. In addition, when the rotation speed of the drive gear portion 51a is changed from 383.1 to 383.5 rpm, the average rotation angle changes from -3° to +2°, and the standard deviation is also 1 or less, which is very small.

As shown in FIG. 17, when the rotation speed of the turntable 2 is set to 30 rpm In the case where the rotation speed of the drive gear portion 51a is set to 575.0 rpm, the average value of the average rotation angle of the wafer holder 24 becomes 0°. Moreover, by making the rotation speed of the drive gear part 51a faster than 575.0 rpm, the wafer holder 24 will rotate clockwise, and by slower than 575.0 rpm, the wafer holder 24 will rotate counterclockwise. In addition, when the rotation speed of the drive gear portion 51a is in the rotation speed range of 574.9 to 575.1 rpm, the rotation speed of the drive gear portion 51a and the average rotation angle are approximately in a proportional relationship. In addition, when the rotation speed of the drive gear portion 51a is changed from 574.9 to 575.1 rpm, the average rotation angle changes from -1° to +1°, and the standard deviation is also 1 or less, which is extremely small.

Based on this result, it can be said that by obtaining the rotation speed with respect to the turntable 2, the average rotation angle of the wafer holder 24 becomes the rotation speed of the drive gear portion 51a of 0°, and the drive gear portion 51a is averaged from this When the rotation speed becomes 0° and the rotation speed increases, the wafer holder 24 can be rotated in one direction, and by decreasing the rotation speed, the wafer holder 24 can be rotated in the other direction. In addition, for example, when the rotation speed of the turntable 2 is set to 10 rpm, it can be said that the average rotation angle can be adjusted in the range of -10° to +8° by adjusting the rotation speed of the drive gear portion 51a. Furthermore, it can be said that by setting the rotation speed of the drive gear portion 51a to a range where the average rotation angle of the wafer holder 24 is 0° and the rotation speed of the drive gear portion 51a is approximately proportional, the wafer can be made The variation of the rotation angle of the holder 24 becomes smaller to stabilize the rotation angle.

Moreover, in Embodiment 1, the distance between the passive surface of the passive gear portion 45a and the driving surface of the drive gear portion 51a at the closest position is set to 0.5, 0.7, 0.9, and 1.0 mm, respectively, as Embodiment 1-1 ~1-4. In addition, in Example 2 (3), the distance between the passive surface of the passive gear portion 45a and the driving surface of the drive gear portion 51a at the closest position is set to 0.5, 0.7, 0.9, and 1.0 mm, respectively. Example 2-1~2-4 (3-1~3-4).

In each of Examples 1-1 to 3-4, the rotation speed of the drive gear portion 51a was set, and the rotary table 2 was rotated 10 times to measure the rotation angle of each wafer holder 24, and the average value was taken 10 times , And each rotation angle of the five wafer holders 24. Moreover, in each of Examples 1-1 to 3-4, for each rotation speed of the drive gear portion 51a, To obtain the rotation angle of each wafer holder 24, and calculate the average rotation angle and the standard deviation from the rotation angles of the five wafer holders 24, and obtain the variation of the rotation angle of the five wafer holders 24 (%: (standard deviation/average rotation angle)×100). The rotation angle uses + to indicate the clockwise rotation, and-to indicate the counterclockwise rotation.

Figures 18 to 21 show examples 1-1 to 1-4, Figures 22 to 25 show examples 2-1 to 2-4, and Figures 26 to 29 show examples 3-1 to 3-4. In the figure, the characteristic diagram of the rotation angle of each wafer holder 24 with respect to the rotation speed (rpm) (°) of the drive gear portion 51a. The white diamond symbol in each figure represents the variation of the rotation angle between the five wafer holders 24. In each characteristic diagram, the rotation angle of the five wafer holders 24 is distinguished by different symbols .

FIG. 30 shows the range of the average rotation angle measured in each of Examples 1-1 to 3-4. The variation from the rotation angle of the five wafer holders 24 becomes smaller and the rotation angle of the wafer holder 24 is stable The characteristic diagram of the range of the average rotation angle. In the characteristic diagrams of the embodiments, the range from the upper end to the lower end of the characteristic diagram including the wired part shows the values measured from the characteristic diagrams of FIGS. 18 to 29, from the maximum value to the minimum value of the average rotation angle. range. Moreover, in each embodiment, the range from the upper end to the lower end of the square part of the characteristic diagram of each embodiment in FIG. 30 shows the range of the average rotation angle when the variation value of the rotation angle of the five wafer holders 24 becomes 5% or less . In the range where the variation value of the rotation angle becomes 5% or less, the rotation angles of the five wafer holders 24 are consistent, and it can be said that the crystal can be stably controlled by setting the rotation speed of the driving gear portion 51a The range of the rotation angle of the circle holder 24.

As shown in FIGS. 18 to 21, in the embodiment 1-1, the variation of the rotation angle of each wafer holder 24 becomes larger, but in the embodiments 1-2 to 1-4, it is hardly seen Each wafer holder has a variation of the rotation angle of 24. Then, as shown in FIG. 30, in Examples 1-2 to 1-4, the variation value of the rotation angle of the five wafer holders 24 is 5 in the range of the average rotation angle of +4.5° to -6.5° %the following.

As shown in FIGS. 22 to 25 and FIG. 30, compared to Examples 2-3 and 2-4, in Examples 2-1 and 2-2, the variation value of the rotation angle of the five wafer holders 24 becomes Below 5% The range is wide, and it can be said that the rotation angle of the wafer holder 24 can be stably controlled within an average rotation angle range of +1.5° to -1.8°.

Furthermore, as shown in FIGS. 26 to 29 and 30, compared to Example 3-1, in Examples 3-2 to 3-4, the variation value of the rotation angle of the five wafer holders 24 becomes 5% The following range is wider.

From this result, it can be seen that if the rotation speed of the turntable 2 is slow, it is easy to stably control the rotation angle of the wafer holder 24. In addition, it can be said that when the rotation speed of the rotary table 2 is 10 rpm, the range of the rotation angle at which the wafer holder 24 can be stably controlled is wider, especially by bringing the passive surface of the passive gear portion 45a closest to The distance of the driving surface of the driving gear portion 51a is set to 0.7 to 1.0 mm, and the rotation angle of the wafer holder 24 can be stably controlled.

In addition, it can be said that when the rotation speed of the turntable 2 is set to 20 to 30 rpm, the distance between the driven surface of the driven gear portion 45a and the driving surface of the driving gear portion 51a is close to 1 mm or less, and the wafer holder 24 can be controlled more stably Angle of rotation.

In the present invention, when the substrate placed on one side of the rotary table is revolved while processing gas is supplied to the substrate for processing, the magnetic gear is used to transmit the configuration change on the drive gear side to the magnetic gear on the driven gear side. The mechanism rotates the mounting table on which the substrate is mounted, so that the uniformity of processing can be improved in the circumferential direction of the substrate.

Each point of the embodiment disclosed in this specification is only an example, not intended to limit the present invention. In fact, the above-mentioned embodiments can be obtained in various forms. In addition, the above-mentioned embodiments can be omitted, replaced, or changed in various types without departing from the scope of the attached patent application and its gist. The scope of the present invention includes all changes within the scope of the attached patent application and its equivalent meaning and scope.

The present invention claims priority based on Japanese Patent Application No. 2016-018314 filed on February 2, 2016 and Japanese Patent Application No. 2016-231407 filed on November 29, 2016, and All contents of the application are incorporated herein by reference.

W‧‧‧ Wafer

2‧‧‧rotating table

11‧‧‧Vacuum container

12‧‧‧Top board

13‧‧‧Container body

18‧‧‧stream

21‧‧‧rotation axis

22‧‧‧Revolving drive unit for revolution

24‧‧‧wafer holder

26‧‧‧spindle

27‧‧‧Crank seal

32‧‧‧Slot

33‧‧‧ Heater

34‧‧‧Cover

42‧‧‧Support plate

43‧‧‧Bearing unit

44‧‧‧Side wall part

45‧‧‧Passive Gear Department

46‧‧‧Crank seal

47‧‧‧Cylinder wall

51‧‧‧Drive Gear

52‧‧‧Drive shaft

53‧‧‧rotation drive

191‧‧‧ Peripheral side horizontal wall

192‧‧‧Central side horizontal wall

193‧‧‧Drop column

194‧‧‧ protrusion

201, 202‧‧‧ opening

311, 312‧‧‧recess

441‧‧‧Stop

Claims (9)

A substrate processing apparatus includes a rotating table provided in a processing container and rotating around a rotation axis, placing a substrate on one side of the rotating table, and rotating the rotating table to supply the substrate while orbiting the substrate A substrate processing apparatus for processing gas for processing; it includes: a mounting table provided with a rotation axis extending in the direction of the rotation axis of the rotation table, which is rotatably arranged around the rotation axis and used for Mounting the substrate; and a magnetic gear mechanism having a passive gear portion for rotating the mounting table around a rotation axis, a driving gear portion for driving the passive gear portion, and a driving portion connected to the driving gear portion The passive gear portion is connected to the mounting table through the rotation shaft, and is rotatably provided in the direction in which the mounting table rotates, and is provided with a driving surface provided on the drive gear portion side formed between The passive surface with magnetic lines of force; the drive gear portion is in a state where the drive surface moves in opposition to the passive surface passing through the preset position on the moving track when the driven gear portion moves along with the rotation of the rotary table It is configured, and in order to move the magnetic force line to rotate the driven gear part, it is connected to the driving part that moves the driving surface; the rotating shaft of the rotating table is provided with a supporting part for supporting the rotating shaft, the rotating The table is formed with an opening into which the rotation shaft supported by the support portion is inserted, and the mounting table is supported by the rotation shaft inserted into the opening in an independent state from the rotation table. For example, the substrate processing device of claim 1, wherein the passive surface of the passive gear portion and the driving surface of the driving gear portion are provided with permanent magnets with different polarities, and permanent magnets with different polarities are formed between The magnetic field lines. A substrate processing device as claimed in item 2 of the patent scope, wherein the passive surface of the passive gear portion is alternately arranged with the polarity along the rotation direction of the passive gear portion Different permanent magnets; the driving surface of the driving gear part is alternately arranged with the permanent magnets of different polarities along the moving direction of the driving surface. For example, the substrate processing device of claim 1, wherein the passive surface of the passive gear portion and the driving surface of the driving gear portion are provided with permanent magnets on one side, and the passive surface and the driving surface are provided on the other side There is a ferromagnetic body for forming the magnetic field line with the permanent magnet. For example, the substrate processing device of claim 1, wherein the passive gear part is connected to the cylinder of the mounting table in such a manner that the central axis coincides with the rotation axis, and the passive surface is formed on the side peripheral surface of the cylinder The drive unit is provided with a drive shaft that rotates the circular plate around the center of rotation, the drive shaft is configured to extend in a direction intersecting with the rotation axis; the drive gear unit is around the drive shaft For a circular plate rotating at the center of rotation, the driving surface is formed on one side of the circular plate. For example, the substrate processing apparatus of claim 1, wherein the passive gear part is connected to the circular plate of the mounting table in such a manner that the center of rotation coincides with the rotation axis, and the passive surface is formed on one side of the circular plate Side; the drive section is provided with a drive shaft that drives the cylinder to rotate around a central axis, the drive shaft is configured to extend in a direction that intersects the rotation axis; the drive gear section is around the drive shaft For a cylinder rotating with a central axis, the driving surface is formed on the side peripheral surface of the cylinder. For example, the substrate processing apparatus of claim 1, wherein the rotating table is configured to freely increase or decrease the number of rotations per unit time; the drive unit is provided with the number of rotations of the rotating table increasing. A position adjusting portion that adjusts the arrangement position of the driving gear by the distance between the driving surface and the passive surface of the magnetic field line. A substrate processing apparatus as claimed in item 1 of the patent application, wherein the passive gear portion is provided with a braking portion, the braking portion is provided with Magnetic force formed between the driving surfaces of the gear part The line is weak magnetic force line, and after passing through the position opposite to the driving surface, the braking surface used to stop the rotation of the driven gear. A substrate processing apparatus as claimed in item 1 of the patent application, wherein the driving gear portion is configured such that the driving surface rotates around the central axis and moves along the direction of rotation, and its rotational speed is set to include when the turntable rotates once When the rotation angle of the mounting table is 0°, the rotation speed of the drive gear portion, the rotation speed of the drive gear portion and the rotation angle will be approximately proportional.

Images