TWI692538B - Thin-film manufacturing apparatus with vhf reactive plasma and thin-film deposition method - Google Patents

Abstract

A thin-film manufacturing apparatus with very high frequency (VHF) reactive plasma including a chamber, at least one plasma source module, at least one pulse adjustment controller, a target module, a substrate stage, and VHF AC power generator is provided. The plasma source module is connected to the chamber. The pulse adjustment controller is coupled with the plasma source module. The pulse adjustment controller controls the plasma source module, so as to generate a pulse plasma. The target placement module is disposed in the chamber. The substrate stage is disposed in the chamber, and located above the target module. The VHF AC power generator is electrically connected to the target placement module to generate a high-frequency alternating electric field between the target placement module and the substrate carrier. A thin-film deposition method using the thin-film manufacturing apparatus with VHF reactive plasma is also provided.

Description

Ultra-high frequency reaction type plasma film manufacturing equipment and film deposition method

The invention relates to a thin film manufacturing equipment and a thin film deposition method, and particularly relates to an ultra-high frequency reactive plasma film manufacturing equipment and a thin film deposition method using the same.

Plasma deposition technology uses the ions generated by the ionization of the gas to strike the target, so that the material of the target is knocked out and deposited on the substrate, thereby forming a thin film. Plasma deposition technology is widely used in the field of optoelectronics to form metal films and transparent conductive films.

However, when the plasma deposition process is performed for a long time, the plasma current value will decrease due to the increase in plasma temperature. As a result, as the time of the plasma deposition process increases, there will be a problem of reduced film deposition rate and reduced film uniformity. In addition, the increase in plasma temperature will also cause the crystallinity of other films on the substrate to change.

The invention provides an ultra-high frequency reactive plasma film manufacturing equipment, which can avoid the problem of excessive plasma temperature.

The invention provides a thin film deposition method, which can maintain the formation rate and uniformity of the thin film for a long time.

The ultra-high frequency reactive plasma film manufacturing equipment of the embodiment of the present invention includes a cavity, at least one plasma source module, at least one pulse modulation controller, target placement module, substrate carrier, and ultra-high frequency AC power Generator. The plasma source module is connected to the cavity. The pulse modulation controller is coupled to the plasma source module. The pulse modulation controller controls the plasma source module to generate pulse plasma. The target placement module is set in the cavity. The substrate carrier is arranged in the cavity and above the target placement module. The UHF AC power generator is electrically connected to the target placement module to generate a high frequency AC electric field between the target placement module and the substrate carrier.

In an embodiment of the invention, the plasma source module includes a gas supply device, a cathode discharge tube, and a first electromagnetic coil. The cathode discharge tube is connected to the gas supply device. The first electromagnetic coil is disposed on the side of the cathode discharge tube close to the cavity, and is coupled to the pulse modulation controller.

In an embodiment of the invention, the ultra-high frequency reactive plasma film manufacturing equipment further includes a first magnet, a second electromagnetic coil, and a second magnet. The first magnet is arranged around the plasma source module. The second electromagnetic coil is arranged around the target placement module. The second magnet is disposed around the second electromagnetic coil.

In an embodiment of the invention, the ultra-high frequency reactive plasma film manufacturing equipment further includes a third electromagnetic coil. The third electromagnetic coil is disposed inside the cavity, and is located around the opening of the cavity communicating with the plasma source module.

In an embodiment of the present invention, at least one plasma source module includes multiple plasma source modules, at least one pulse modulation controller includes multiple pulse modulation controllers, and the multiple plasma source modules are respectively coupled Connected to multiple pulse modulation controllers.

In an embodiment of the invention, the pulse frequency generated by the UHF AC power generator is 40.68MHz to 81.36MHz.

The thin film deposition method of the embodiment of the present invention includes the following steps. Provide the aforementioned ultra-high frequency reactive plasma film manufacturing equipment. Place the target on the target placement module. Place the substrate on the substrate carrier. The ultra-high frequency AC power generator generates a high-frequency AC electric field between the target placement module on which the target is placed and the substrate carrier on which the substrate is placed. At least one pulse modulation controller controls at least one plasma source module to generate pulse plasma. Make the pulsed plasma hit the target on the target placement module. The target material on the target placement module travels to the surface of the substrate to form a thin film.

In an embodiment of the invention, the ultra-high frequency reactive plasma film manufacturing equipment further includes a first magnet and a second magnet, and the film deposition method further includes the following steps. The first electromagnet and the second electromagnet are used to control the traveling path of the pulsed plasma, so that the pulsed plasma can travel to the target on the target placement module after being turned.

In an embodiment of the present invention, at least one plasma source module includes multiple plasma source modules, at least one pulse modulation controller includes multiple pulse modulation controllers, and the multiple plasma source modules are respectively coupled Connected to multiple pulse modulation controllers.

In an embodiment of the invention, the pulse width of the pulsed plasma ranges from 10 μs to 3000 μs.

In an embodiment of the invention, the percentage of the pulse width of the pulsed plasma in the switching period of the pulsed plasma ranges from 1% to 99%.

In an embodiment of the invention, the absolute value of the peak value of the pulse voltage of the pulse plasma is 400V to 1000V.

Based on the above, the ultra-high frequency reactive plasma film manufacturing equipment and the film deposition method of the embodiments of the present invention control the plasma source module by the pulse modulation controller to generate pulse plasma. Compared to continuous plasma, pulsed plasma is intermittent plasma. In addition, the UHF AC power generator can generate a high-frequency AC electric field between the target placement module and the substrate carrier. Therefore, the plasma ion energy density of the pulsed plasma can be maintained and the DC power applied to the power generator can be reduced, and the temperature of the pulsed plasma can be reduced accordingly. In this way, the plasma temperature can be prevented from being too high. Therefore, it is possible to avoid the problem that the plasma current value drops due to excessive plasma temperature. In other words, the film formation rate and film uniformity can be maintained for a long time. In addition, when other film layers have been formed on the substrate, the heat accumulation effect caused by the plasma temperature being too high can be avoided, so that the crystallinity of the film layers formed on the substrate can be avoided. Furthermore, since the plasma temperature can be prevented from being too high, the high energy particles can be prevented from damaging the film layer formed on the substrate.

In order to make the above-mentioned features and advantages of the present invention more obvious and understandable, the embodiments are specifically described below in conjunction with the accompanying drawings for detailed description as follows.

10.30: UHF reactive plasma film manufacturing equipment

100: cavity

102, 104: opening

110: Plasma source module

112: Gas supply device

114: Cathode discharge tube

116: First solenoid

120: pulse modulation controller

130: power generator

140: the first magnet

142: Second electromagnetic coil

144: Second magnet

146: Third electromagnetic coil

150: Target placement module

152: target seat

154: target material

160: substrate carrier

162: Substrate

170: Reactive gas supply device

180: UHF AC power generator

P: peak pulse voltage

PL, PL1: pulse plasma

S410, S421, S422, S430, S440, S450, S460: steps

T: switching cycle

W: pulse width

FIG. 1 is a schematic diagram of an ultra-high frequency reactive plasma film manufacturing equipment according to an embodiment of the present invention.

2 is a graph of voltage versus time for a DC pulsed plasma according to an embodiment of the invention.

3 is a schematic diagram of an ultra-high frequency reactive plasma film manufacturing equipment according to another embodiment of the present invention.

FIG. 4 is a flowchart of a thin film deposition method according to an embodiment of the invention.

FIG. 5 is a graph of temperature versus coating time for the comparative example and the example.

The present invention will be explained more fully below with reference to the drawings of this embodiment. However, the present invention can also be embodied in various forms, and should not be limited to the embodiments described herein. The thickness of layers and regions in the drawings will be exaggerated for clarity. The same or similar reference numbers indicate the same or similar elements, and the following paragraphs will not repeat them one by one. In addition, the directional terms mentioned in the embodiments, for example: up, down, left, right, front or back, etc., are only the directions referring to the attached drawings. Therefore, the directional terminology is used to illustrate rather than limit the invention.

FIG. 1 is a schematic diagram of an ultra-high frequency reactive plasma film manufacturing equipment according to an embodiment of the present invention.

Please refer to FIG. 1, manufacturing of ultra-high frequency reactive plasma film according to an embodiment of the present invention The apparatus 10 includes a cavity 100, at least one plasma source module 110, at least one pulse modulation controller 120, a target placement module 150, a substrate carrier 160, and ultra high frequency (Very High Frequency (VHF) AC power generation器180. 180. In an embodiment, the cavity 10 may be connected to a vacuum device (not shown) through the opening 102. In this way, when the UHF reactive plasma film manufacturing apparatus 10 is in operation, the air pressure inside the cavity 100 may be less than the air pressure outside the cavity 100 (ie, the negative pressure is maintained in the cavity 100).

The plasma source module 110 is connected to the cavity 100, and the pulse modulation controller 120 is coupled to the plasma source module 110. The pulse modulation controller 120 controls the plasma source module 110 to generate the pulse plasma PL. The UHF AC power generator 180 is electrically connected to the target placement module 150 to generate a high frequency AC electric field between the target placement module 150 and the substrate carrier 160.

In an embodiment, the ultra-high frequency reactive plasma film manufacturing apparatus 10 may further include a power generator 130. The pulse modulation controller 120 is coupled between the plasma source module 110 and the power generator 130. For example, the power generator 130 may be a DC power generator. In this way, the pulse plasma PL generated by the plasma source module 110 controlled by the pulse modulation controller 120 may be a DC pulse plasma.

2 is a graph of voltage versus time for a DC pulsed plasma according to an embodiment of the invention.

1 and 2, in one embodiment, the pulse width PL of the pulse plasma PL generated by the plasma source module 110 controlled by the pulse modulation controller 120 may range from 10 μs to 3000 μs. The percentage of the pulse width W of the pulse plasma PL in the switching period T of the pulse plasma PL may range from 1% to 99%. this In addition, the absolute value of the pulse voltage peak value P of the pulse plasma PL may range from 400V to 1000V.

Please refer to FIG. 1. In an embodiment, the plasma source module 110 may include a gas supply device 112, a cathode discharge tube 114 and a first electromagnetic coil 116. The cathode discharge tube 114 is connected to the gas supply device 112. The first electromagnetic coil 116 is disposed on the side of the cathode discharge tube 114 close to the cavity 100 and is coupled to the pulse modulation controller 120.

In an embodiment, the gas supply device 112 may be a mass flow controller. The gas supply device 112 may provide gas to the cathode discharge tube 114. In an embodiment, the gas provided by the gas supply device 112 may include argon, helium, oxygen, nitrogen, or a combination thereof, but the present invention is not limited thereto.

The cathode discharge tube 114 may serve as a cathode, and the first electromagnetic coil 116 may serve as an anode. The pulse modulation controller 120 can regulate the voltage between the cathode discharge tube 114 and the first electromagnetic coil 116 to make it into a pulse voltage as shown in FIG. 2. This pulse voltage can ionize the above gas to form a pulsed plasma PL. The pulsed plasma PL can travel to the inside of the cavity 100 under the action of the electromagnetic field. In an embodiment, the first electromagnetic coil 116 may be ring-shaped (a cross-sectional shape of the ring-shaped first electromagnetic coil 116 is schematically depicted in FIG. 1 ), so that the pulsed plasma PL can pass through the ring-shaped first electromagnetic coil 116而入腔体100。 116 and enter the cavity 100.

The target placement module 150 is disposed in the cavity 100. For example, the plasma source module 110 may be connected to the side wall of the cavity 100, and the target placement module 150 may be disposed at the bottom of the cavity 100. In an embodiment, the target placement module 150 may include a target seat 152 and a target 154. The target 154 is mounted on the target base 152. In addition, A negative bias may be applied to the target seat 152. The traveling path of the pulsed plasma PL may be controlled so that the pulsed plasma PL travels to the target placement module 150. As a result, the pulsed plasma PL can hit the target 154. In an embodiment, the material of the target 154 may include indium, gallium, tin, or a combination thereof, but the invention is not limited thereto.

In an embodiment, the UHF reactive plasma film manufacturing apparatus 10 may further include a first magnet 140, a second electromagnetic coil 142, and a second magnet 144. The first magnet 140 may be disposed around the plasma source module 110. The second electromagnetic coil 142 is disposed around the target placement module 150, and the second magnet 144 is disposed around the second electromagnetic coil 142. In addition, the ultra-high frequency reactive plasma film manufacturing apparatus 10 may further include a third electromagnetic coil 146. The third electromagnetic coil 146 is disposed inside the cavity 100 and around the opening 104 of the cavity 100 communicating with the plasma source module 110.

In an embodiment, the first magnet 140, the second electromagnetic coil 142, the second magnet 144, and the third electromagnetic coil 146 may all be ring-shaped structures. FIG. 1 schematically illustrates the cross-sectional shapes of the ring-shaped first magnet 140, the ring-shaped second electromagnetic coil 142, the ring-shaped second magnet 144, and the ring-shaped third electromagnetic coil 146. By providing the first magnet 140, the second electromagnetic coil 142, the second magnet 144, and the third electromagnetic coil 146, the travel path of the pulse plasma PL can be controlled. In this way, after the pulsed plasma PL enters the cavity 100 through the opening 104, it can be diverted to travel to the target placement module 150.

The substrate carrier 160 is disposed in the cavity 100 and above the target placement module 150. The substrate 162 may be disposed on a side of the substrate carrier 160 facing the target placement module 150. In an embodiment, the ultra-high frequency reactive plasma film manufacturing equipment 10 A plurality of substrate carriers 160 may be included, and the plurality of substrates 162 are respectively disposed on the plurality of substrate carriers 160. The plurality of substrate carriers 160 can be transferred to the position of the cavity 100 facing the target placement module 150 in sequence. The pulsed plasma PL strikes the target 154 to deposit the material of the target 154 on the surface of the substrate 162 to form a thin film.

In an embodiment, the ultra-high frequency reactive plasma film manufacturing apparatus 10 may further include a reactive gas supply device 170. The reactive gas supply device 170 is connected to the cavity 100. The reactive gas supply device 170 may provide the reactive gas between the target 154 and the substrate 162. In this way, the impacted material of the target 154 can react with the reactive gas to generate a reaction product. Next, the reaction product is deposited on the surface of the substrate 162 to form a thin film. In an embodiment, the reactive gas may include oxygen, nitrogen, hydrogen, or a combination thereof. In addition, in an embodiment, the material of the thin film deposited on the substrate 162 may include indium oxide (In ₂ O ₃ ), indium tin oxide (ITO), tin oxide (SnO ₂ ), and zinc oxide (ZnO ), cadmium oxide (CdO), indium cadmium oxide (CdIn ₂ O ₄ ), cadmium tin oxide (Cd ₂ SnO ₄ ), tin zinc oxide (Zn ₂ SnO ₄ ), indium oxide doped zinc oxide (In ₂ O ₃ -ZnO), tungsten-doped indium oxide (IWO), titanium-doped indium oxide (ITiO), or a combination thereof.

Based on the above embodiment, it can be known that in the ultra-high frequency reactive plasma film manufacturing apparatus 10, the pulse modulation controller 120 controls the plasma source module 110 to generate the pulse plasma PL. Compared with the continuous plasma, the pulsed plasma PL is an intermittent plasma. In this way, the plasma temperature can be prevented from being too high. Therefore, it is possible to avoid the problem that the plasma current value drops due to excessive plasma temperature. In other words, the film formation rate and film uniformity can be maintained for a long time. In addition, other substrates 162 have been formed In the case of the film layer, the heat accumulation effect caused by the plasma temperature being too high can be avoided, so that the crystallinity of the film layer formed on the substrate 162 can be avoided. Furthermore, since the plasma temperature can be prevented from being too high, the film layer formed on the substrate 162 can be prevented from being damaged by high-energy particles. In addition, the UHF AC power generator 160 can generate a high-frequency AC electric field between the target placement module 150 and the substrate carrier 160. Therefore, the plasma ion energy density of the pulsed plasma PL can be maintained and the DC power applied to the power generator 130 can be reduced, and the temperature of the pulsed plasma PL can be correspondingly lowered, and a good coating rate can be achieved.

3 is a schematic diagram of an ultra-high frequency reactive plasma film manufacturing equipment according to another embodiment of the present invention.

1 and 3, the UHF reactive plasma film manufacturing equipment 30 is similar to the UHF reactive plasma film manufacturing equipment 10, but the UHF reactive plasma film manufacturing equipment 30 includes two sets of plasma The source module 110 and the two pulse modulation controllers 120. The two sets of pulse modulation controllers 120 are respectively coupled to the two sets of plasma source modules 110. In this way, two sets of pulse modulation controllers 120 can control the two sets of plasma source modules 110 respectively to jointly generate the pulsed plasma PL1. In an embodiment, two groups of plasma source modules 110 are disposed on opposite sides of the cavity 100. In this way, the distribution of the pulsed plasma PL1 can be a symmetrical shape, and the impact area of the pulsed plasma PL1 against the target 154 can be increased. Therefore, it can be applied to a target material having a large area, and a thin film with a larger area can be formed on the surface of the substrate 162. In an embodiment, the ultra-high frequency reactive plasma film manufacturing apparatus 30 may further include two power generators 130. Each pulse modulation controller 120 is coupled between each plasma source module 110 and each power generator 130 between. However, those with ordinary knowledge in the art can adjust the number of the plasma source module 110, the pulse modulation controller 120 and the power generator 130 according to product requirements, and the invention is not limited thereto.

FIG. 4 is a flowchart of a thin film deposition method according to an embodiment of the invention.

Referring to FIG. 4, step S410 is performed to provide ultra-high frequency reactive plasma film manufacturing equipment. In the subsequent continuation, the film deposition method is described using the ultra-high frequency reactive plasma film manufacturing equipment 10 shown in FIG. 1 as an example, so the ultra-high frequency reactive plasma film manufacturing equipment 10 or similar The components to which other ultra-high-frequency reactive plasma film manufacturing equipment of the UHF reactive plasma film manufacturing apparatus 10 belongs or corresponding component symbols will be described, but it should be noted that the film deposition method of the present invention is not limited to Using the UHF reactive plasma film manufacturing equipment 10 shown in FIG. 1, other UHF reactive plasma film manufacturing equipment similar to the UHF reactive plasma film manufacturing equipment 10 can also be used for film deposition.

In step S421, the target 154 is placed on the target placement module 150.

In step S422, the substrate 162 is placed on the substrate carrier 160.

It should be noted that the present embodiment does not limit the sequence of step S421 and step S422. In other words, step S421 can be executed first, and then step S422 can be executed, or step S422 can be executed first, and then step S421 can be executed.

Step S430 is performed to generate a high-frequency AC electric field between the target placement module 150 provided with the target 154 and the substrate carrier 160 provided with the substrate 162 by the UHF AC power generator 180. In addition, the pulse frequency of the high-frequency AC electric field generated by the UHF AC power generator 180 may be 40.68 MHz to 81.36 MHz.

In step S440, the pulse modulation controller 120 controls the plasma source module 110 to generate the pulse plasma PL. Specifically, the pulse modulation controller 120 can be used to modulate the pulse voltage provided to the plasma source module 110. This pulse voltage can ionize the gas in the plasma source module 100 to form a pulsed plasma PL.

Step S450 may be performed to control the travel path of the pulsed plasma PL with the first magnet 140 and the second magnet 144. In this way, the pulsed plasma PL can be diverted to travel to the target 154. In one embodiment, step S420 further includes the second electromagnetic coil 144 and the third electromagnetic coil 146 assisting in controlling the travel path of the pulsed plasma PL.

Step S460 is performed to cause the pulsed plasma PL to strike the target 154. Next, step S440 is performed to advance the material of the target 154 to the surface of the substrate 162 to form a thin film. Specifically, the pulsed plasma PL will impact part of the material of the target 154, and the material impacted from the target 154 may have kinetic energy, and may travel to the surface of the substrate 162 under the action of an electric field to form a thin film. In one embodiment, the pulsed plasma PL can strike the target 154 by applying a bias voltage on the substrate carrier 152. Referring to FIG. 2, the pulse width W of the pulse plasma PL may range from 10 μs to 3000 μs. The percentage of the pulse width W of the pulse plasma PL in the switching period T of the pulse plasma PL may range from 1% to 99%. In addition, the absolute value of the pulse voltage peak value P of the pulse plasma PL may range from 400V to 1000V.

In one embodiment, step S440 may further include providing a reactive gas between the substrate 162 and the target 154. In an embodiment, the reactive gas supply device 170 may provide the reactive gas between the substrate 162 and the target 154. In this way, the impacted material of the target 154 can react with the reactive gas to generate a reaction product. Next, the reaction product is deposited on the surface of the substrate 162 to form a thin film.

Please refer to FIGS. 3 and 4. In another embodiment, step S420 may further include multiple pulse modulation controllers 120 (for example, two pulse modulation controllers 120) respectively controlling multiple plasma source modules 110 (for example, two sets of plasma source modules 110) to jointly generate pulsed plasma PL1.

[Comparative Examples and Examples]

In order to prove that the ultra-high frequency reactive plasma film manufacturing equipment of the present invention can reduce the temperature of the pulsed plasma accordingly, the following comparative examples and examples are particularly described as an example. However, these examples are not to be construed as limiting the scope of the present invention in any sense.

5 is a graph of temperature versus coating time for Comparative Example 1 and Example 1. FIG. The experimental conditions of Comparative Example 1 and Example 1 are basically the same, the only difference is that the ultra-high frequency AC power generator of the ultra-high frequency reactive plasma film manufacturing equipment in Comparative Example 1 is not activated, while the ultra-high frequency in Example 1 The UHF AC power generator of the high-frequency reactive plasma film manufacturing equipment has been activated.

Specifically, in Comparative Example 1 and Example 1, the ultra-high frequency reactive plasma film manufacturing equipment 10 shown in FIG. 1 is used for the coating test, and the gas pressure in the cavity 10 is 8 to 11 mTorr, and the gas supply device In an atmosphere where the flow rate of the oxygen gas supplied by 112 is 90 sccm, the coating test is performed with oxygen plasma (O ₂ plasma).

In Comparative Example 1, the UHF AC power generator is not activated, and at this time, the output power of the power generator 130 may be set to 20 KW.

In Embodiment 1, the frequency of the UHF AC power generator 180 is set It is set to 40.68 MHz, and the power is set to 1 KW. At this time, the output power of the power generator 130 can be set to 15 KW.

The coating rate of Comparative Example 1 is substantially the same as the coating rate of Example 1. Furthermore, by measuring the temperature of the corresponding substrate carrier 160, a temperature vs. coating time curve as shown in FIG. 5 is obtained.

Comparing Comparative Example 1 with Example 1, the ultra-high frequency AC power generator can generate a high-frequency AC electric field between the target placement module and the substrate carrier. Therefore, the plasma ion energy density of the pulsed plasma can be maintained and the DC power applied to the power generator can be reduced, so that the temperature of the pulsed plasma is correspondingly reduced, and a good coating rate can be achieved.

In summary, the ultra-high frequency reactive plasma film manufacturing equipment and the film deposition method of the embodiments of the present invention control the plasma source module by the pulse modulation controller to generate pulse plasma. Compared to continuous plasma, pulsed plasma is intermittent plasma. In addition, the UHF AC power generator can generate a high-frequency AC electric field between the target placement module and the substrate carrier. Therefore, the plasma ion energy density of the pulsed plasma can be maintained and the DC power applied to the power generator can be reduced, and the temperature of the pulsed plasma can be reduced accordingly. In this way, the plasma temperature can be prevented from being too high. Therefore, it is possible to avoid the problem that the plasma current value drops due to excessive plasma temperature. In other words, the film formation rate and film uniformity can be maintained for a long time. In addition, when other film layers have been formed on the substrate, the heat accumulation effect caused by excessive plasma temperature can be avoided, so that the crystallinity of other film layers formed on the substrate can be avoided. Furthermore, since the plasma temperature can be prevented from being too high, high energy particles can be prevented from hitting the substrate The other film layers that have been formed cause damage.

Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be subject to the scope defined in the appended patent application.

10: UHF reactive plasma film manufacturing equipment

100: cavity

102, 104: opening

110: Plasma source module

112: Gas supply device

114: Cathode discharge tube

116: First solenoid

120: pulse modulation controller

130: power generator

140: the first magnet

142: Second electromagnetic coil

144: Second magnet

146: Third electromagnetic coil

150: Target placement module

152: target seat

154: target material

160: substrate carrier

162: Substrate

170: Reactive gas supply device

180: UHF AC power generator

PL: pulse plasma

Claims (10)

An ultra-high frequency reactive plasma film manufacturing equipment, including: a cavity; at least one plasma source module connected to the cavity; at least one pulse modulation controller coupled to the at least one plasma source A module, wherein the at least one pulse modulation controller controls the at least one plasma source module to generate a pulsed plasma; a target placement module is provided in the cavity; a substrate carrier is provided in In the cavity, and above the target placement module; and an ultra-high frequency AC power generator, electrically connected to the target placement module, to place the module and the target on the target A high-frequency AC electric field is generated between substrate carriers. The ultra-high frequency reactive plasma film manufacturing equipment according to item 1 of the patent application scope, wherein the at least one plasma source module includes: a gas supply device; a cathode discharge tube connected to the gas supply device; and The first electromagnetic coil is disposed on a side of the cathode discharge tube close to the cavity, and is coupled to the at least one pulse modulation controller. The ultra-high-frequency reactive plasma film manufacturing equipment as described in item 1 of the scope of the patent application further includes: a first magnet disposed around the at least one plasma source module; a second electromagnetic coil disposed on the The target is placed around the module; and the second magnet is disposed around the second electromagnetic coil. The ultra-high frequency reactive plasma film manufacturing equipment as described in item 1 of the patent application scope further includes a third electromagnetic coil, which is disposed inside the cavity, and is located in the cavity and communicates with the at least one Around the opening of the plasma source module. The ultra-high frequency reactive plasma film manufacturing equipment according to item 1 of the patent application scope, wherein the at least one plasma source module includes a plurality of plasma source modules, and the at least one pulse modulation controller includes A plurality of pulse modulation controllers, the plurality of plasma source modules are respectively coupled to the plurality of pulse modulation controllers. The ultra-high frequency reactive plasma film manufacturing equipment as described in item 1 of the patent application range, wherein the pulse frequency generated by the ultra-high frequency AC power generator is 40.68MHz to 81.36MHz. A thin film deposition method, comprising: providing an ultra-high frequency reactive plasma film manufacturing equipment as described in item 1 of the patent application scope; placing a target on the target placement module; placing a substrate on the substrate carrier On the UHF AC power generator, a high frequency AC electric field will be generated between the target placement module where the target is placed and the substrate carrier where the substrate is placed; The at least one pulse modulation controller controls the at least one plasma source module to generate pulsed plasma; causes the pulsed plasma to strike the target on the target placement module; and causes the The material of the target on the target placement module travels to the surface of the substrate to form a thin film. The thin film deposition method as described in item 7 of the patent application range, wherein the ultra-high frequency reactive plasma thin film manufacturing apparatus further includes a first magnet and a second magnet, and the thin film deposition method further includes: An electromagnet and the second electromagnet control the traveling path of the pulsed plasma, so that the pulsed plasma travels to the target on the target placement module after being turned. The thin film deposition method according to item 7 of the patent application range, wherein the at least one plasma source module includes a plurality of plasma source modules, and the at least one pulse modulation controller includes a plurality of pulse modulation controllers , The multiple pulse modulation controllers respectively control the multiple plasma source modules. The thin film deposition method as described in item 7 of the patent application range, wherein: the pulse width of the pulsed plasma is in the range of 10 μs to 3000 μs; the pulse width of the pulsed plasma is in the switching period of the pulsed plasma The percentage range is 1% to 99%; or the absolute value of the peak value of the pulse voltage of the pulse plasma is 400 V to 1000 V.

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