TWI691709B - Thermal radiation temperature measurement system - Google Patents

Thermal radiation temperature measurement system Download PDF

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TWI691709B
TWI691709B TW108103488A TW108103488A TWI691709B TW I691709 B TWI691709 B TW I691709B TW 108103488 A TW108103488 A TW 108103488A TW 108103488 A TW108103488 A TW 108103488A TW I691709 B TWI691709 B TW I691709B
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thermoelectric element
detection
time
thermal radiation
temperature
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TW108103488A
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TW202028706A (en
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沈志雄
郭宜庭
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國立彰化師範大學
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Abstract

A thermal radiation temperature measurement system includes a thermoelectric element, a detection switch module coupled with the first endpoint of the thermoelectric element, and a central processing module coupled with the first and second endpoints of the thermoelectric element and the detection switch module. The detection switch module, according to the operation signal from the central processing module, controls the thermoelectric element to be in a first or second measurement mode. In the first measurement model, a first temperature signal is generated based on the voltage difference between the first and second endpoints. In the second measurement mode, the thermoelectric element measures the environmental temperature to generate a second temperature signal. By switching the thermoelectric element between the two temperature measurement modes, the cost for thermistor installation and the chip area are reduced.

Description

熱輻射溫度量測系統Thermal radiation temperature measurement system

本發明係關於一種量測系統,尤指一種利用熱電元件進行物體及環境溫度偵測之熱輻射溫度量測系統。The invention relates to a measurement system, in particular to a thermal radiation temperature measurement system using thermoelectric elements to detect the temperature of objects and the environment.

按,熱電堆感測器可用以測量目標物的溫度,而熱電堆感測器之感測晶片主要係由熱電堆及熱敏電阻構成,其中,由熱電堆吸收目標物因溫度所產生之紅外線能量所產生的相對溫度信號,以及由熱敏電阻量測出熱電堆周遭之環境溫度。Press, the thermopile sensor can be used to measure the temperature of the target, and the sensing chip of the thermopile sensor is mainly composed of a thermopile and a thermistor, in which the thermopile absorbs the infrared generated by the target due to the temperature The relative temperature signal generated by the energy and the ambient temperature around the thermopile are measured by the thermistor.

然而,熱敏電阻係設置於熱電堆之周圍,其所偵測到的環境溫度,畢竟還不是熱電堆本身的環境溫度,而是熱電堆周圍的環境溫度,因此,其所量測到的溫度精準度仍有疑慮。However, the thermistor is set around the thermopile. The detected ambient temperature is not the ambient temperature of the thermopile itself, but the ambient temperature around the thermopile. Therefore, the measured temperature There are still doubts about accuracy.

再者,熱電堆感測器之感測晶片除了需要同時設置熱電堆及熱敏電阻之面積,亦要另外設置熱敏電阻以及連接導線以取得熱敏電阻之訊號,如此一來,便會增加感測晶片之整體面積與製造成本。In addition, in addition to the area of the thermopile and thermistor, the sensing chip of the thermopile sensor needs to be additionally equipped with a thermistor and a connecting wire to obtain the signal of the thermistor, which will increase Sensing the overall area and manufacturing cost of the wafer.

為解決上述課題,本發明提供一種熱輻射溫度量測系統,透過偵測切換模組控制熱電元件進行兩種模態之溫度量測,藉以有效提升量測精度,以及降低設置熱敏電阻之成本與縮小晶片面積。In order to solve the above-mentioned problems, the present invention provides a thermal radiation temperature measurement system that controls thermoelectric elements to perform temperature measurement in two modes through a detection switching module, so as to effectively improve the measurement accuracy and reduce the cost of installing the thermistor And shrink the wafer area.

本發明之一項實施例提供一種熱輻射溫度量測系統,其包含:一熱電元件、一偵測切換模組及一中央處理模組,熱電元件具有一第一端點及一第二端點;偵測切換模組與熱電元件之第一端點耦接;中央處理模組耦接於熱電元件之第一端點與第二端點及偵測切換模組,中央處理模組輸出一操控訊號至偵測切換模組,偵測切換模組根據操控訊號控制熱電元件為一第一量測模態或一第二量測模態,其中,於第一量測模態時,藉由熱電元件之第一端點與第二端點間之電壓差,以產生一第一溫度訊號,中央處理模組接收第一溫度訊號;於第二量測模態時,藉由熱電元件之電阻值變化進行環境溫度量測,以產生一第二溫度訊號,中央處理模組接收第二溫度訊號;中央處理模組依據第一溫度訊號與第二溫度訊號計算出目標物之實際溫度。An embodiment of the present invention provides a thermal radiation temperature measurement system, which includes: a thermoelectric element, a detection switching module, and a central processing module. The thermoelectric element has a first end point and a second end point ; The detection switching module is coupled to the first end of the thermoelectric element; the central processing module is coupled to the first end and the second end of the thermoelectric element and the detection switching module, the central processing module outputs a control The signal to the detection switching module, the detection switching module controls the thermoelectric element to a first measurement mode or a second measurement mode according to the control signal, wherein, during the first measurement mode, the thermoelectric The voltage difference between the first terminal and the second terminal of the device to generate a first temperature signal, the central processing module receives the first temperature signal; in the second measurement mode, by the resistance value of the thermoelectric element The ambient temperature is measured by changes to generate a second temperature signal. The central processing module receives the second temperature signal; the central processing module calculates the actual temperature of the target object based on the first temperature signal and the second temperature signal.

藉由上述,本發明透過偵測切換模組控制熱電元件進行兩種模態之溫度量測;藉此,避免偵測到非熱電元件本身周遭的環境溫度,造成所測得目標物之溫度誤差,進而確保偵測溫度之精準度。Through the above, the present invention controls the thermoelectric element through the detection switching module to perform temperature measurement in two modes; thereby, avoiding the detection of the ambient temperature around the non-thermoelectric element itself, causing the temperature error of the measured target To ensure the accuracy of temperature detection.

再者,本發明無須額外設置熱敏電阻,僅需透過偵測切換模控制熱電元件進行兩種模態之溫度量測;藉此,能夠有效降低系統成本,而且能夠縮小晶片面積及提高製造良率。Furthermore, the present invention does not require additional thermistors, and only needs to control the thermoelectric elements to detect the temperature of the two modes by detecting the switching mode; thereby, the system cost can be effectively reduced, and the chip area can be reduced and the manufacturing quality can be improved. rate.

於其中一項實施例中,中央處理模組具有一控制器及一訊號轉換器,控制器輸出操控訊號;訊號轉換器接收轉換第一溫度訊號及第二溫度訊號並傳送至控制器;其中,控制器具有一時間單元,時間單元設定操控訊號之輸出時間;控制器依據時間單元所設定操控訊號之輸出時間,將第一量測模態區分為一第一延遲狀態及一第一偵測狀態,以及將第二量測模態區分為一第二延遲狀態及一第二偵測狀態。藉此,本發明控制熱電元件先進行延遲狀態再進入偵測狀態,用以避免熱電元件在不穩定狀態下進行溫度量測,令熱電元件產生不穩定之溫度變化訊號;藉此,能夠避免熱電元件輸出雜訊,影響接續之偵測精準度,進而提升本發明量測精準度。In one embodiment, the central processing module has a controller and a signal converter, the controller outputs a control signal; the signal converter receives and converts the first temperature signal and the second temperature signal and sends it to the controller; wherein, The controller has a time unit, and the time unit sets the output time of the control signal; the controller divides the first measurement mode into a first delay state and a first detection state according to the output time of the control signal set by the time unit. And the second measurement mode is divided into a second delay state and a second detection state. In this way, the present invention controls the thermoelectric element to perform a delayed state before entering the detection state, so as to prevent the thermoelectric element from performing temperature measurement in an unstable state, so that the thermoelectric element generates an unstable temperature change signal; thereby, the thermoelectric element can be avoided The noise output by the component affects the accuracy of the subsequent detection, thereby improving the measurement accuracy of the present invention.

於其中一項實施例中,本發明更具有一放大器,其與熱電元件、中央處理模組及偵測切換模組耦接;藉此,本發明之放大器能夠作為訊號放大處理,以及控制熱電元件狀態之雙重功效。In one of the embodiments, the present invention further has an amplifier, which is coupled to the thermoelectric element, the central processing module and the detection switching module; thereby, the amplifier of the present invention can be used as a signal amplification process and control the thermoelectric element The dual effect of status.

為便於說明本發明於上述發明內容一欄中所表示的中心思想,茲以具體實施例表達。實施例中各種不同物件係按適於說明之比例、尺寸、變形量或位移量而描繪,而非按實際元件的比例予以繪製,合先敘明。In order to facilitate the description of the central idea of the present invention in the column of the above summary of the invention, it is expressed in a specific embodiment. In the embodiments, various objects are drawn according to the proportion, size, deformation or displacement suitable for description, rather than drawn according to the proportion of actual elements, which will be described first.

請參閱圖1至圖5所示,本發明提供一種熱輻射溫度量測系統100,其包含:一熱電元件10、一偵測切換模組20、一中央處理模組30、一放大器40及一參考電壓模組50,熱電元件10與偵測切換模組20、中央處理模組30及放大器40耦接,其中,透過偵測切換模組20控制熱電元件10進行兩種模態之溫度量測。Please refer to FIG. 1 to FIG. 5, the present invention provides a thermal radiation temperature measurement system 100, which includes: a thermoelectric element 10, a detection switching module 20, a central processing module 30, an amplifier 40 and a The reference voltage module 50, the thermoelectric element 10 are coupled to the detection switching module 20, the central processing module 30, and the amplifier 40, wherein the thermoelectric element 10 is controlled by the detection switching module 20 to perform temperature measurement in two modes .

熱電元件10,其具有一第一端點11及一第二端點12,於本發明實施例中,熱電元件10係熱電堆(thermopile)。The thermoelectric element 10 has a first terminal 11 and a second terminal 12. In the embodiment of the present invention, the thermoelectric element 10 is a thermopile.

偵測切換模組20,其與熱電元件10之第一端點11耦接;於本發明實施例中,偵測切換模組20為一P型金氧半場效電晶體(PMOS),P型金氧半場效電晶體之源極與熱電元件10之第一端點11耦接,P型金氧半場效電晶體之汲極與電源端點VDD耦接,P型金氧半場效電晶體之閘極與中央處理模組30耦接,其中,電源端點VDD提供之電源電壓大於0伏特,於本實施例中,電源端點VDD提供3.3伏特之電源電壓。The detection switching module 20 is coupled to the first terminal 11 of the thermoelectric element 10; in the embodiment of the present invention, the detection switching module 20 is a P-type metal oxide half field effect transistor (PMOS), P-type The source electrode of the MOSFET is coupled to the first terminal 11 of the thermoelectric element 10, the drain electrode of the P-type MOSFET is coupled to the power supply terminal VDD, and the P-type MOSFET The gate is coupled to the central processing module 30, wherein the power supply voltage provided by the power supply terminal VDD is greater than 0 volts. In this embodiment, the power supply terminal VDD provides a power supply voltage of 3.3 volts.

中央處理模組30,其耦接於熱電元件10之第一端點11與第二端點12以及偵測切換模組20,中央處理模組30具有一控制器31,控制器31與偵測切換模組20耦接,控制器31輸出一操控訊號至偵測切換模組20,偵測切換模組20根據操控訊號控制熱電元件10為一第一量測模態或一第二量測模態;於本發明實施例中,操控訊號為方波訊號,即為連續輸出之高準位電壓(1/HIGH)與低準位電壓(0/LOW),其中,當操控訊號為高準位電壓時,則偵測切換模組20不導通,而熱電元件10為第一量測模態;當操控訊號為低準位電壓時,偵測切換模組20導通,而熱電元件10為第二量測模態。The central processing module 30 is coupled to the first terminal 11 and the second terminal 12 of the thermoelectric element 10 and the detection switching module 20. The central processing module 30 has a controller 31, the controller 31 and the detection The switching module 20 is coupled, and the controller 31 outputs a control signal to the detection switching module 20. The detection switching module 20 controls the thermoelectric element 10 according to the control signal to a first measurement mode or a second measurement mode In the embodiment of the present invention, the control signal is a square wave signal, which is a continuous output of high level voltage (1/HIGH) and low level voltage (0/LOW), wherein, when the control signal is high level When the voltage is high, it detects that the switching module 20 is not conductive, and the thermoelectric element 10 is the first measurement mode; when the control signal is a low level voltage, the detection switching module 20 is conductive, and the thermoelectric element 10 is the second Measuring modalities.

於第一量測模態時,用以量測目標物之溫度,其中,藉由熱電元件10之第一端點11與第二端點12間之電壓差,以產生一第一溫度訊號,而第一溫度訊號為目標物之熱輻射溫度,由中央處理模組30接收第一溫度訊號;於第二量測模態時,熱電元件10進行環境溫度量測,以產生一第二溫度訊號,由中央處理模組30接收第二溫度訊號;中央處理模組30經由第一溫度訊號與第二溫度訊號計算出目標物之實際溫度,也就是說,第一溫度訊號所量測出目標物之熱輻射溫度可能會受到環境溫度影響,因此,需要透過中央處理模組30將第一溫度訊號減去第二溫度訊號,以取得目標物之實際溫度。During the first measurement mode, it is used to measure the temperature of the target object, wherein a first temperature signal is generated by the voltage difference between the first terminal 11 and the second terminal 12 of the thermoelectric element 10, The first temperature signal is the thermal radiation temperature of the target, and the central processing module 30 receives the first temperature signal; during the second measurement mode, the thermoelectric element 10 performs ambient temperature measurement to generate a second temperature signal , The central processing module 30 receives the second temperature signal; the central processing module 30 calculates the actual temperature of the target object through the first temperature signal and the second temperature signal, that is, the target object is measured by the first temperature signal The heat radiation temperature may be affected by the ambient temperature. Therefore, the central processing module 30 needs to subtract the second temperature signal from the first temperature signal to obtain the actual temperature of the target.

中央處理模組30具有一訊號轉換器32,訊號轉換器32耦接於熱電元件10之第一端點11與第二端點12間,其中,訊號轉換器32接收轉換第一溫度訊號及第二溫度訊號,並將轉換後之第一溫度訊號及第二溫度訊號傳送至控制器31;於本發明實施例中,訊號轉換器32為類比數位轉換器(Analog-to-Digital Converter, ADC)。The central processing module 30 has a signal converter 32, which is coupled between the first terminal 11 and the second terminal 12 of the thermoelectric element 10, wherein the signal converter 32 receives and converts the first temperature signal and the second Two temperature signals, and send the converted first temperature signal and second temperature signal to the controller 31; in the embodiment of the present invention, the signal converter 32 is an analog-to-digital converter (ADC) .

再者,控制器31具有一時間單元311,時間單元311用以設定操控訊號之輸出時間。控制器31依據時間單元311所設定操控訊號之輸出時間,將第一量測模態區分為一第一延遲狀態D1及一第一偵測狀態R1,以及將第二量測模態區分為一第二延遲狀態D2及一第二偵測狀態R2,其中,在第一偵測狀態R1下,熱電元件10用以量測目標物之熱輻射溫度;在第二偵測狀態R2下,熱電元件10用以量測環境溫度。Furthermore, the controller 31 has a time unit 311 which is used to set the output time of the control signal. The controller 31 divides the first measurement mode into a first delay state D1 and a first detection state R1 according to the output time of the control signal set by the time unit 311, and divides the second measurement mode into a first The second delay state D2 and a second detection state R2, wherein, in the first detection state R1, the thermoelectric element 10 is used to measure the thermal radiation temperature of the target; in the second detection state R2, the thermoelectric element 10 is used to measure the ambient temperature.

請參閱圖1及圖5所示,於第一量測模態時,控制器31先操控熱電元件10進行第一延遲狀態D1,再進行第一偵測狀態R1;於第二量測模態時,控制器31先操控熱電元件10進行第二延遲狀態D2,再進行第二偵測狀態R2;其中,第一延遲狀態D1與第二延遲狀態D2之目的在於,避免熱電元件10直接進入第一偵測狀態R1或第二偵測狀態R2時,訊號震盪不穩定而造成熱電元件10輸出不穩定訊號。Please refer to FIGS. 1 and 5. In the first measurement mode, the controller 31 first controls the thermoelectric element 10 to perform the first delay state D1, and then performs the first detection state R1; in the second measurement mode At this time, the controller 31 first controls the thermoelectric element 10 to perform the second delay state D2, and then performs the second detection state R2; wherein the purpose of the first delay state D1 and the second delay state D2 is to prevent the thermoelectric element 10 from directly entering the second During a detection state R1 or a second detection state R2, the signal oscillation is unstable and the thermoelectric element 10 outputs an unstable signal.

時間單元311對應第一延遲狀態D1設有一第一延遲時間,時間單元311對應第一偵測狀態R1設有一第一偵測時間,時間單元311對應第二延遲狀態D2設有一第二延遲時間,時間單元311對應第二偵測狀態R2設有一第二偵測時間,第二延遲時間不同於第一延遲時間,第二偵測時間不同於第一偵測時間,其中,第二延遲時間短於第一延遲時間,第二偵測時間短於第一偵測時間,第一延遲時間短於第一偵測時間,第二延遲時間短於第二偵測時間,於本發明實施例中,第一偵測時間為8.8秒,第二偵測時間為1.8秒,第一延遲時間為0.9秒,第二延遲時間為0.2秒;而第一量測模態之整體時間長於第二量測模態之整體時間,其用意在於,環境溫度相較於目標物之熱輻射溫度較為穩定,所以當熱電元件10於第一量測模態下偵測目標物之熱輻射溫度過程中,能夠短暫切換至第二量測模態,確認目前熱電元件10周遭環境溫度之變化,以確保量測目標物實際溫度之精準度。The time unit 311 has a first delay time corresponding to the first delay state D1, the time unit 311 has a first detection time corresponding to the first detection state R1, and the time unit 311 has a second delay time corresponding to the second delay state D2. The time unit 311 has a second detection time corresponding to the second detection state R2. The second delay time is different from the first delay time, and the second detection time is different from the first detection time. The second delay time is shorter than The first delay time, the second detection time is shorter than the first detection time, the first delay time is shorter than the first detection time, and the second delay time is shorter than the second detection time. In the embodiment of the present invention, the first One detection time is 8.8 seconds, the second detection time is 1.8 seconds, the first delay time is 0.9 seconds, and the second delay time is 0.2 seconds; and the overall time of the first measurement mode is longer than that of the second measurement mode The overall time is intended to mean that the ambient temperature is more stable than the thermal radiation temperature of the target, so when the thermoelectric element 10 detects the thermal radiation temperature of the target in the first measurement mode, it can be switched to The second measurement mode confirms the current ambient temperature change of the thermoelectric element 10 to ensure the accuracy of measuring the actual temperature of the target object.

放大器40,其與熱電元件10、偵測切換模組20及中央處理模組30之訊號轉換器32耦接,其中,放大器40之正端與熱電元件10之第一端點11及偵測切換模組20耦接,放大器40之負端與參考電壓模組50及熱電元件10之第二端點12耦接,放大器40之輸出端耦接中央處理模組30之訊號轉換器32。The amplifier 40 is coupled to the signal converter 32 of the thermoelectric element 10, the detection switching module 20 and the central processing module 30, wherein the positive end of the amplifier 40 and the first end point 11 of the thermoelectric element 10 and the detection switch The module 20 is coupled. The negative terminal of the amplifier 40 is coupled to the reference voltage module 50 and the second terminal 12 of the thermoelectric element 10. The output terminal of the amplifier 40 is coupled to the signal converter 32 of the central processing module 30.

參考電壓模組50,其用以輸出參考電壓給予熱電元件10及放大器40,於本發明實施例中,參考電壓模組50具有一第一電阻51及一第二電阻52,第一電阻51與第二電阻52係串列設於電源端點VDD及接地端間,第一電阻51與第二電阻52將電源端點VDD提供之電源電壓分壓以輸出參考電壓。The reference voltage module 50 is used to output a reference voltage to the thermoelectric element 10 and the amplifier 40. In the embodiment of the present invention, the reference voltage module 50 has a first resistor 51 and a second resistor 52. The first resistor 51 and The second resistor 52 is arranged in series between the power terminal VDD and the ground. The first resistor 51 and the second resistor 52 divide the power voltage provided by the power terminal VDD to output the reference voltage.

請參閱圖2、圖3及圖5所示,當控制器31輸出之操控訊號為高準位電壓時,偵測切換模組20無法導通,因而控制熱電元件10為第一量測模態,此時,控制器31先操控熱電元件10進行第一延遲狀態D1後,再進行第一偵測狀態R1,讓熱電元件10感測到目標物之熱輻射後,熱電元件10會產生溫度之電壓值,因此,熱電元件10之第一端點11與第二端點12間會有微小訊號差(電壓差),此微小訊號差即為第一溫度訊號,而第一溫度訊號透過放大器40之訊號放大且輸出至訊號轉換器32,再由控制器31接收第一溫度訊號。Please refer to FIG. 2, FIG. 3 and FIG. 5, when the control signal output by the controller 31 is a high level voltage, the detection switching module 20 cannot be turned on, so the thermoelectric element 10 is controlled as the first measurement mode, At this time, the controller 31 first controls the thermoelectric element 10 to perform the first delay state D1, and then performs the first detection state R1 to allow the thermoelectric element 10 to sense the thermal radiation of the target, and then the thermoelectric element 10 will generate a temperature voltage Therefore, there will be a small signal difference (voltage difference) between the first terminal 11 and the second terminal 12 of the thermoelectric element 10. This small signal difference is the first temperature signal, and the first temperature signal passes through the amplifier 40. The signal is amplified and output to the signal converter 32, and then the controller 31 receives the first temperature signal.

請參閱圖2、圖4及圖5所示,當控制器31輸出之操控訊號為低準位電壓時,偵測切換模組20導通,因而控制熱電元件10為第二量測模態,此時,控制器31先操控熱電元件10進行第二延遲狀態D2後,再進行第二偵測狀態R2,而放大器40會呈現正飽和,無法進行放大訊號作用,因此,能夠將熱電元件10等效視為可變電阻,而熱電元件10會根據周遭環境溫度之不同,會有電阻變化,因而讓參考電壓模組50之參考電壓隨之變化,進而產生第二溫度訊號,此第二溫度訊號輸出至訊號轉換器32,再由控制器31接收第二溫度訊號。Please refer to FIG. 2, FIG. 4 and FIG. 5, when the control signal output by the controller 31 is a low level voltage, the detection switching module 20 is turned on, and thus the thermoelectric element 10 is controlled as the second measurement mode. At this time, the controller 31 first controls the thermoelectric element 10 to perform the second delay state D2, and then performs the second detection state R2, and the amplifier 40 will exhibit positive saturation and cannot perform signal amplification. Therefore, the thermoelectric element 10 can be equivalent It is regarded as a variable resistance, and the thermoelectric element 10 will have a resistance change according to the surrounding ambient temperature, so that the reference voltage of the reference voltage module 50 changes accordingly, thereby generating a second temperature signal, and the second temperature signal is output To the signal converter 32, the controller 31 receives the second temperature signal.

綜合上述,本發明具有以下功效:In summary, the present invention has the following effects:

一、本發明之熱輻射溫度量測系統100,能夠透過偵測切換模組20控制熱電元件10進行兩種模態之溫度量測;藉此,以熱電元件10本身偵測目標物之溫度以及熱電元件10之周遭環境溫度,進而確保目標物實際溫度之精準度。1. The thermal radiation temperature measurement system 100 of the present invention can control the thermoelectric element 10 to perform temperature measurement of two modes through the detection switching module 20; thereby, the temperature of the target object is detected by the thermoelectric element 10 itself and The ambient temperature of the thermoelectric element 10 ensures the accuracy of the actual temperature of the target.

二、本發明之熱輻射溫度量測系統100無須額外設置熱敏電阻,僅需透過偵測切換模組20控制熱電元件10進行兩種模態之溫度量測;藉此,能夠有效降低系統成本,而且能夠縮小晶片面積及提高製造良率。2. The thermal radiation temperature measurement system 100 of the present invention does not require additional thermistors, and only needs to control the thermoelectric element 10 through the detection switching module 20 to perform temperature measurement in two modes; thereby, the system cost can be effectively reduced And, can reduce the wafer area and improve manufacturing yield.

三、本發明之熱輻射溫度量測系統100,能夠控制熱電元件10於第一量測模態或第二量測模態時,先進行延遲狀態再進入偵測狀態;藉此,能夠避免熱電元件10輸出雜訊,影響接續之偵測精準度,進而提升本發明量測精準度。3. The thermal radiation temperature measurement system 100 of the present invention can control the thermoelectric element 10 in the first measurement mode or the second measurement mode to perform the delay state before entering the detection state; thereby, the thermoelectricity can be avoided The element 10 outputs noise, which affects the detection accuracy of the connection, thereby improving the measurement accuracy of the present invention.

四、本發明熱輻射溫度量測系統100之放大器40能夠作為訊號放大處理,以及搭配偵測切換模組20控制熱電元件10作為兩種溫度量測模態之雙重功效。4. The amplifier 40 of the thermal radiation temperature measurement system 100 of the present invention can be used for signal amplification processing, and the dual function of controlling the thermoelectric element 10 with the detection switching module 20 as two temperature measurement modes.

以上所舉實施例僅用以說明本發明而已,非用以限制本發明之範圍。舉凡不違本發明精神所從事的種種修改或變化,俱屬本發明意欲保護之範疇。The above-mentioned embodiments are only used to illustrate the present invention, not to limit the scope of the present invention. Any modifications or changes that do not violate the spirit of the present invention are within the scope of the invention to be protected.

100:熱輻射溫度量測系統 40:放大器 10:熱電元件 50:參考電壓模組 11:第一端點 51:第一電阻 12:第二端點 52:第二電阻 20:偵測切換模組 D1:第一延遲狀態 30:中央處理模組 D2:第二延遲狀態 31:控制器 R1:第一偵測狀態 311:時間單元 R2:第二偵測狀態 32:訊號轉換器 VDD:電源端點100: thermal radiation temperature measurement system 40: amplifier 10: Thermoelectric element 50: Reference voltage module 11: First endpoint 51: First resistance 12: second endpoint 52: Second resistance 20: Detection switching module D1: First delay state 30: central processing module D2: Second delay state 31: Controller R1: first detection status 311: time unit R2: second detection status 32: Signal converter VDD: power supply endpoint

圖1係本發明系統架構圖。 圖2係本發明電路實施例示意圖。 圖3係本發明第一量測模態之等效電路示意圖。 圖4係本發明第二量測模態之等效電路示意圖。 圖5係本發明時間控制單元控制流程示意圖。 FIG. 1 is a system architecture diagram of the present invention. 2 is a schematic diagram of an embodiment of the circuit of the present invention. 3 is a schematic diagram of an equivalent circuit of the first measurement mode of the present invention. 4 is a schematic diagram of an equivalent circuit of a second measurement mode of the present invention. 5 is a schematic diagram of the control flow of the time control unit of the present invention.

100:熱輻射溫度量測系統 100: thermal radiation temperature measurement system

10:熱電元件 10: Thermoelectric element

20:偵測切換模組 20: Detection switching module

30:中央處理模組 30: central processing module

31:控制器 31: Controller

311:時間單元 311: time unit

32:訊號轉換器 32: Signal converter

40:放大器 40: amplifier

50:參考電壓模組 50: Reference voltage module

Claims (10)

一種熱輻射溫度量測系統,其包含: 一熱電元件,其具有一第一端點及一第二端點; 一偵測切換模組,其與該熱電元件之第一端點耦接;以及 一中央處理模組,其耦接於該熱電元件之第一端點與第二端點及該偵測切換模組,該中央處理模組輸出一操控訊號至該偵測切換模組,該偵測切換模組根據該操控訊號控制該熱電元件為一第一量測模態或一第二量測模態,其中,於該第一量測模態時,藉由該熱電元件之第一端點與第二端點間之電壓差,以產生一第一溫度訊號,該中央處理模組接收該第一溫度訊號;於該第二量測模態時,藉由該熱電元件之電阻值變化進行環境溫度量測,以產生一第二溫度訊號,該中央處理模組接收該第二溫度訊號;該中央處理模組依據該第一溫度訊號與該第二溫度訊號計算出目標物之實際溫度。 A thermal radiation temperature measurement system, including: A thermoelectric element having a first end point and a second end point; A detection switching module, which is coupled to the first end of the thermoelectric element; and A central processing module, which is coupled to the first and second end points of the thermoelectric element and the detection switching module, the central processing module outputs a control signal to the detection switching module, the detection The measurement switching module controls the thermoelectric element to be a first measurement mode or a second measurement mode according to the control signal, wherein, during the first measurement mode, the first end of the thermoelectric element is used The voltage difference between the point and the second end point to generate a first temperature signal, the central processing module receives the first temperature signal; during the second measurement mode, the resistance value of the thermoelectric element changes Ambient temperature measurement is performed to generate a second temperature signal, and the central processing module receives the second temperature signal; the central processing module calculates the actual temperature of the target object based on the first temperature signal and the second temperature signal . 如請求項1所述之熱輻射溫度量測系統,其中,該中央處理模組具有一控制器及一訊號轉換器,該控制器輸出該操控訊號;該訊號轉換器接收轉換該第一溫度訊號及該第二溫度訊號並傳送至該控制器。The thermal radiation temperature measurement system according to claim 1, wherein the central processing module has a controller and a signal converter, the controller outputs the control signal; the signal converter receives and converts the first temperature signal And send the second temperature signal to the controller. 如請求項2所述之熱輻射溫度量測系統,其中,該控制器具有一時間單元,該時間單元設定該操控訊號之輸出時間。The thermal radiation temperature measurement system according to claim 2, wherein the controller has a time unit, and the time unit sets the output time of the control signal. 如請求項3所述之熱輻射溫度量測系統,其中,該控制器依據該時間單元所設定該操控訊號之輸出時間,將該第一量測模態區分為一第一延遲狀態及一第一偵測狀態,以及將該第二量測模態區分為一第二延遲狀態及一第二偵測狀態。The thermal radiation temperature measurement system according to claim 3, wherein the controller distinguishes the first measurement mode into a first delay state and a first time according to the output time of the control signal set by the time unit A detection state, and distinguish the second measurement mode into a second delay state and a second detection state. 如請求項4所述之熱輻射溫度量測系統,其中,於該第一量測模態時,該控制器先操控該熱電元件進行該第一延遲狀態,再進行該第一偵測狀態;於該第二量測模態時,該控制器先操控該熱電元件進行該第二延遲狀態,再進行該第二偵測狀態。The thermal radiation temperature measurement system according to claim 4, wherein during the first measurement mode, the controller first controls the thermoelectric element to perform the first delay state, and then performs the first detection state; During the second measurement mode, the controller first controls the thermoelectric element to perform the second delay state, and then performs the second detection state. 如請求項5所述之熱輻射溫度量測系統,其中,該時間單元對應該第一延遲狀態設有一第一延遲時間,該時間單元對應該第二延遲狀態設有一第二延遲時間;該時間單元對應該第一偵測狀態設有一第一偵測時間,該時間單元對應該第二偵測狀態設有一第二偵測時間,該第二延遲時間不同於該第一延遲時間,該第二偵測時間不同於該第一偵測時間。The thermal radiation temperature measuring system according to claim 5, wherein the time unit is provided with a first delay time corresponding to the first delay state, and the time unit is provided with a second delay time corresponding to the second delay state; the time The unit has a first detection time corresponding to the first detection state, the time unit has a second detection time corresponding to the second detection state, the second delay time is different from the first delay time, the second The detection time is different from the first detection time. 如請求項6所述之熱輻射溫度量測系統,其中,該第二延遲時間短於該第一延遲時間,該第二偵測時間短於該第一偵測時間,該第一延遲時間短於該第一偵測時間,該第二延遲時間短於該第二偵測時間。The thermal radiation temperature measurement system according to claim 6, wherein the second delay time is shorter than the first delay time, the second detection time is shorter than the first detection time, and the first delay time is shorter At the first detection time, the second delay time is shorter than the second detection time. 如請求項1所述之熱輻射溫度量測系統,其中,該偵測切換模組為一P型金氧半場效電晶體,該P型金氧半場效電晶體之源極與該熱電元件耦接,該P型金氧半場效電晶體之汲極與電源端點耦接,該P型金氧半場效電晶體之閘極與該中央處理模組耦接。The thermal radiation temperature measurement system according to claim 1, wherein the detection switching module is a P-type metal oxide half-field effect transistor, and the source of the P-type metal oxide half-field effect transistor is coupled to the thermoelectric element Then, the drain of the P-type metal-oxide-half field-effect transistor is coupled to the power supply terminal, and the gate of the P-type metal-oxide-half field-effect transistor is coupled to the central processing module. 如請求項8所述之熱輻射溫度量測系統,更具有一放大器,其與該熱電元件、該中央處理模組及該偵測切換模組耦接。The thermal radiation temperature measurement system according to claim 8 further has an amplifier, which is coupled to the thermoelectric element, the central processing module, and the detection switching module. 如請求項9所述之熱輻射溫度量測系統,其中,該放大器之正端與該熱電元件之第一端點及該偵測切換模組耦接,該放大器之負端與一參考電壓模組及該熱電元件之第二端點耦接,該放大器之輸出端耦接該中央處理模組。The thermal radiation temperature measurement system according to claim 9, wherein the positive terminal of the amplifier is coupled to the first terminal of the thermoelectric element and the detection switching module, and the negative terminal of the amplifier is connected to a reference voltage mode And the second end of the thermoelectric element are coupled, and the output end of the amplifier is coupled to the central processing module.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614716A (en) * 1996-04-26 1997-03-25 Infratemp, Inc. Alternating current method and apparatus for ambient temperature compensation for modulated energy sensors
WO2001050102A1 (en) 2000-01-07 2001-07-12 Kazuhito Sakano Thermopile sensor and temperature measuring method by infrared rays
TW461497U (en) * 1999-02-02 2001-10-21 Chen Chao Wang Probe head of infrared thermometer
CN102203574A (en) * 2008-10-21 2011-09-28 生命扫描有限公司 Infrared temperature measurement of strip
TWI636251B (en) * 2017-06-23 2018-09-21 中原大學 Thermal characteristics measuring device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5614716A (en) * 1996-04-26 1997-03-25 Infratemp, Inc. Alternating current method and apparatus for ambient temperature compensation for modulated energy sensors
TW461497U (en) * 1999-02-02 2001-10-21 Chen Chao Wang Probe head of infrared thermometer
WO2001050102A1 (en) 2000-01-07 2001-07-12 Kazuhito Sakano Thermopile sensor and temperature measuring method by infrared rays
CN102203574A (en) * 2008-10-21 2011-09-28 生命扫描有限公司 Infrared temperature measurement of strip
TWI636251B (en) * 2017-06-23 2018-09-21 中原大學 Thermal characteristics measuring device

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