TWI691709B - Thermal radiation temperature measurement system - Google Patents
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本發明係關於一種量測系統,尤指一種利用熱電元件進行物體及環境溫度偵測之熱輻射溫度量測系統。The invention relates to a measurement system, in particular to a thermal radiation temperature measurement system using thermoelectric elements to detect the temperature of objects and the environment.
按,熱電堆感測器可用以測量目標物的溫度,而熱電堆感測器之感測晶片主要係由熱電堆及熱敏電阻構成,其中,由熱電堆吸收目標物因溫度所產生之紅外線能量所產生的相對溫度信號,以及由熱敏電阻量測出熱電堆周遭之環境溫度。Press, the thermopile sensor can be used to measure the temperature of the target, and the sensing chip of the thermopile sensor is mainly composed of a thermopile and a thermistor, in which the thermopile absorbs the infrared generated by the target due to the temperature The relative temperature signal generated by the energy and the ambient temperature around the thermopile are measured by the thermistor.
然而,熱敏電阻係設置於熱電堆之周圍,其所偵測到的環境溫度,畢竟還不是熱電堆本身的環境溫度,而是熱電堆周圍的環境溫度,因此,其所量測到的溫度精準度仍有疑慮。However, the thermistor is set around the thermopile. The detected ambient temperature is not the ambient temperature of the thermopile itself, but the ambient temperature around the thermopile. Therefore, the measured temperature There are still doubts about accuracy.
再者,熱電堆感測器之感測晶片除了需要同時設置熱電堆及熱敏電阻之面積,亦要另外設置熱敏電阻以及連接導線以取得熱敏電阻之訊號,如此一來,便會增加感測晶片之整體面積與製造成本。In addition, in addition to the area of the thermopile and thermistor, the sensing chip of the thermopile sensor needs to be additionally equipped with a thermistor and a connecting wire to obtain the signal of the thermistor, which will increase Sensing the overall area and manufacturing cost of the wafer.
為解決上述課題,本發明提供一種熱輻射溫度量測系統,透過偵測切換模組控制熱電元件進行兩種模態之溫度量測,藉以有效提升量測精度,以及降低設置熱敏電阻之成本與縮小晶片面積。In order to solve the above-mentioned problems, the present invention provides a thermal radiation temperature measurement system that controls thermoelectric elements to perform temperature measurement in two modes through a detection switching module, so as to effectively improve the measurement accuracy and reduce the cost of installing the thermistor And shrink the wafer area.
本發明之一項實施例提供一種熱輻射溫度量測系統,其包含:一熱電元件、一偵測切換模組及一中央處理模組,熱電元件具有一第一端點及一第二端點;偵測切換模組與熱電元件之第一端點耦接;中央處理模組耦接於熱電元件之第一端點與第二端點及偵測切換模組,中央處理模組輸出一操控訊號至偵測切換模組,偵測切換模組根據操控訊號控制熱電元件為一第一量測模態或一第二量測模態,其中,於第一量測模態時,藉由熱電元件之第一端點與第二端點間之電壓差,以產生一第一溫度訊號,中央處理模組接收第一溫度訊號;於第二量測模態時,藉由熱電元件之電阻值變化進行環境溫度量測,以產生一第二溫度訊號,中央處理模組接收第二溫度訊號;中央處理模組依據第一溫度訊號與第二溫度訊號計算出目標物之實際溫度。An embodiment of the present invention provides a thermal radiation temperature measurement system, which includes: a thermoelectric element, a detection switching module, and a central processing module. The thermoelectric element has a first end point and a second end point ; The detection switching module is coupled to the first end of the thermoelectric element; the central processing module is coupled to the first end and the second end of the thermoelectric element and the detection switching module, the central processing module outputs a control The signal to the detection switching module, the detection switching module controls the thermoelectric element to a first measurement mode or a second measurement mode according to the control signal, wherein, during the first measurement mode, the thermoelectric The voltage difference between the first terminal and the second terminal of the device to generate a first temperature signal, the central processing module receives the first temperature signal; in the second measurement mode, by the resistance value of the thermoelectric element The ambient temperature is measured by changes to generate a second temperature signal. The central processing module receives the second temperature signal; the central processing module calculates the actual temperature of the target object based on the first temperature signal and the second temperature signal.
藉由上述,本發明透過偵測切換模組控制熱電元件進行兩種模態之溫度量測;藉此,避免偵測到非熱電元件本身周遭的環境溫度,造成所測得目標物之溫度誤差,進而確保偵測溫度之精準度。Through the above, the present invention controls the thermoelectric element through the detection switching module to perform temperature measurement in two modes; thereby, avoiding the detection of the ambient temperature around the non-thermoelectric element itself, causing the temperature error of the measured target To ensure the accuracy of temperature detection.
再者,本發明無須額外設置熱敏電阻,僅需透過偵測切換模控制熱電元件進行兩種模態之溫度量測;藉此,能夠有效降低系統成本,而且能夠縮小晶片面積及提高製造良率。Furthermore, the present invention does not require additional thermistors, and only needs to control the thermoelectric elements to detect the temperature of the two modes by detecting the switching mode; thereby, the system cost can be effectively reduced, and the chip area can be reduced and the manufacturing quality can be improved. rate.
於其中一項實施例中,中央處理模組具有一控制器及一訊號轉換器,控制器輸出操控訊號;訊號轉換器接收轉換第一溫度訊號及第二溫度訊號並傳送至控制器;其中,控制器具有一時間單元,時間單元設定操控訊號之輸出時間;控制器依據時間單元所設定操控訊號之輸出時間,將第一量測模態區分為一第一延遲狀態及一第一偵測狀態,以及將第二量測模態區分為一第二延遲狀態及一第二偵測狀態。藉此,本發明控制熱電元件先進行延遲狀態再進入偵測狀態,用以避免熱電元件在不穩定狀態下進行溫度量測,令熱電元件產生不穩定之溫度變化訊號;藉此,能夠避免熱電元件輸出雜訊,影響接續之偵測精準度,進而提升本發明量測精準度。In one embodiment, the central processing module has a controller and a signal converter, the controller outputs a control signal; the signal converter receives and converts the first temperature signal and the second temperature signal and sends it to the controller; wherein, The controller has a time unit, and the time unit sets the output time of the control signal; the controller divides the first measurement mode into a first delay state and a first detection state according to the output time of the control signal set by the time unit. And the second measurement mode is divided into a second delay state and a second detection state. In this way, the present invention controls the thermoelectric element to perform a delayed state before entering the detection state, so as to prevent the thermoelectric element from performing temperature measurement in an unstable state, so that the thermoelectric element generates an unstable temperature change signal; thereby, the thermoelectric element can be avoided The noise output by the component affects the accuracy of the subsequent detection, thereby improving the measurement accuracy of the present invention.
於其中一項實施例中,本發明更具有一放大器,其與熱電元件、中央處理模組及偵測切換模組耦接;藉此,本發明之放大器能夠作為訊號放大處理,以及控制熱電元件狀態之雙重功效。In one of the embodiments, the present invention further has an amplifier, which is coupled to the thermoelectric element, the central processing module and the detection switching module; thereby, the amplifier of the present invention can be used as a signal amplification process and control the thermoelectric element The dual effect of status.
為便於說明本發明於上述發明內容一欄中所表示的中心思想,茲以具體實施例表達。實施例中各種不同物件係按適於說明之比例、尺寸、變形量或位移量而描繪,而非按實際元件的比例予以繪製,合先敘明。In order to facilitate the description of the central idea of the present invention in the column of the above summary of the invention, it is expressed in a specific embodiment. In the embodiments, various objects are drawn according to the proportion, size, deformation or displacement suitable for description, rather than drawn according to the proportion of actual elements, which will be described first.
請參閱圖1至圖5所示,本發明提供一種熱輻射溫度量測系統100,其包含:一熱電元件10、一偵測切換模組20、一中央處理模組30、一放大器40及一參考電壓模組50,熱電元件10與偵測切換模組20、中央處理模組30及放大器40耦接,其中,透過偵測切換模組20控制熱電元件10進行兩種模態之溫度量測。Please refer to FIG. 1 to FIG. 5, the present invention provides a thermal radiation
熱電元件10,其具有一第一端點11及一第二端點12,於本發明實施例中,熱電元件10係熱電堆(thermopile)。The
偵測切換模組20,其與熱電元件10之第一端點11耦接;於本發明實施例中,偵測切換模組20為一P型金氧半場效電晶體(PMOS),P型金氧半場效電晶體之源極與熱電元件10之第一端點11耦接,P型金氧半場效電晶體之汲極與電源端點VDD耦接,P型金氧半場效電晶體之閘極與中央處理模組30耦接,其中,電源端點VDD提供之電源電壓大於0伏特,於本實施例中,電源端點VDD提供3.3伏特之電源電壓。The
中央處理模組30,其耦接於熱電元件10之第一端點11與第二端點12以及偵測切換模組20,中央處理模組30具有一控制器31,控制器31與偵測切換模組20耦接,控制器31輸出一操控訊號至偵測切換模組20,偵測切換模組20根據操控訊號控制熱電元件10為一第一量測模態或一第二量測模態;於本發明實施例中,操控訊號為方波訊號,即為連續輸出之高準位電壓(1/HIGH)與低準位電壓(0/LOW),其中,當操控訊號為高準位電壓時,則偵測切換模組20不導通,而熱電元件10為第一量測模態;當操控訊號為低準位電壓時,偵測切換模組20導通,而熱電元件10為第二量測模態。The
於第一量測模態時,用以量測目標物之溫度,其中,藉由熱電元件10之第一端點11與第二端點12間之電壓差,以產生一第一溫度訊號,而第一溫度訊號為目標物之熱輻射溫度,由中央處理模組30接收第一溫度訊號;於第二量測模態時,熱電元件10進行環境溫度量測,以產生一第二溫度訊號,由中央處理模組30接收第二溫度訊號;中央處理模組30經由第一溫度訊號與第二溫度訊號計算出目標物之實際溫度,也就是說,第一溫度訊號所量測出目標物之熱輻射溫度可能會受到環境溫度影響,因此,需要透過中央處理模組30將第一溫度訊號減去第二溫度訊號,以取得目標物之實際溫度。During the first measurement mode, it is used to measure the temperature of the target object, wherein a first temperature signal is generated by the voltage difference between the
中央處理模組30具有一訊號轉換器32,訊號轉換器32耦接於熱電元件10之第一端點11與第二端點12間,其中,訊號轉換器32接收轉換第一溫度訊號及第二溫度訊號,並將轉換後之第一溫度訊號及第二溫度訊號傳送至控制器31;於本發明實施例中,訊號轉換器32為類比數位轉換器(Analog-to-Digital Converter, ADC)。The
再者,控制器31具有一時間單元311,時間單元311用以設定操控訊號之輸出時間。控制器31依據時間單元311所設定操控訊號之輸出時間,將第一量測模態區分為一第一延遲狀態D1及一第一偵測狀態R1,以及將第二量測模態區分為一第二延遲狀態D2及一第二偵測狀態R2,其中,在第一偵測狀態R1下,熱電元件10用以量測目標物之熱輻射溫度;在第二偵測狀態R2下,熱電元件10用以量測環境溫度。Furthermore, the
請參閱圖1及圖5所示,於第一量測模態時,控制器31先操控熱電元件10進行第一延遲狀態D1,再進行第一偵測狀態R1;於第二量測模態時,控制器31先操控熱電元件10進行第二延遲狀態D2,再進行第二偵測狀態R2;其中,第一延遲狀態D1與第二延遲狀態D2之目的在於,避免熱電元件10直接進入第一偵測狀態R1或第二偵測狀態R2時,訊號震盪不穩定而造成熱電元件10輸出不穩定訊號。Please refer to FIGS. 1 and 5. In the first measurement mode, the
時間單元311對應第一延遲狀態D1設有一第一延遲時間,時間單元311對應第一偵測狀態R1設有一第一偵測時間,時間單元311對應第二延遲狀態D2設有一第二延遲時間,時間單元311對應第二偵測狀態R2設有一第二偵測時間,第二延遲時間不同於第一延遲時間,第二偵測時間不同於第一偵測時間,其中,第二延遲時間短於第一延遲時間,第二偵測時間短於第一偵測時間,第一延遲時間短於第一偵測時間,第二延遲時間短於第二偵測時間,於本發明實施例中,第一偵測時間為8.8秒,第二偵測時間為1.8秒,第一延遲時間為0.9秒,第二延遲時間為0.2秒;而第一量測模態之整體時間長於第二量測模態之整體時間,其用意在於,環境溫度相較於目標物之熱輻射溫度較為穩定,所以當熱電元件10於第一量測模態下偵測目標物之熱輻射溫度過程中,能夠短暫切換至第二量測模態,確認目前熱電元件10周遭環境溫度之變化,以確保量測目標物實際溫度之精準度。The
放大器40,其與熱電元件10、偵測切換模組20及中央處理模組30之訊號轉換器32耦接,其中,放大器40之正端與熱電元件10之第一端點11及偵測切換模組20耦接,放大器40之負端與參考電壓模組50及熱電元件10之第二端點12耦接,放大器40之輸出端耦接中央處理模組30之訊號轉換器32。The
參考電壓模組50,其用以輸出參考電壓給予熱電元件10及放大器40,於本發明實施例中,參考電壓模組50具有一第一電阻51及一第二電阻52,第一電阻51與第二電阻52係串列設於電源端點VDD及接地端間,第一電阻51與第二電阻52將電源端點VDD提供之電源電壓分壓以輸出參考電壓。The
請參閱圖2、圖3及圖5所示,當控制器31輸出之操控訊號為高準位電壓時,偵測切換模組20無法導通,因而控制熱電元件10為第一量測模態,此時,控制器31先操控熱電元件10進行第一延遲狀態D1後,再進行第一偵測狀態R1,讓熱電元件10感測到目標物之熱輻射後,熱電元件10會產生溫度之電壓值,因此,熱電元件10之第一端點11與第二端點12間會有微小訊號差(電壓差),此微小訊號差即為第一溫度訊號,而第一溫度訊號透過放大器40之訊號放大且輸出至訊號轉換器32,再由控制器31接收第一溫度訊號。Please refer to FIG. 2, FIG. 3 and FIG. 5, when the control signal output by the
請參閱圖2、圖4及圖5所示,當控制器31輸出之操控訊號為低準位電壓時,偵測切換模組20導通,因而控制熱電元件10為第二量測模態,此時,控制器31先操控熱電元件10進行第二延遲狀態D2後,再進行第二偵測狀態R2,而放大器40會呈現正飽和,無法進行放大訊號作用,因此,能夠將熱電元件10等效視為可變電阻,而熱電元件10會根據周遭環境溫度之不同,會有電阻變化,因而讓參考電壓模組50之參考電壓隨之變化,進而產生第二溫度訊號,此第二溫度訊號輸出至訊號轉換器32,再由控制器31接收第二溫度訊號。Please refer to FIG. 2, FIG. 4 and FIG. 5, when the control signal output by the
綜合上述,本發明具有以下功效:In summary, the present invention has the following effects:
一、本發明之熱輻射溫度量測系統100,能夠透過偵測切換模組20控制熱電元件10進行兩種模態之溫度量測;藉此,以熱電元件10本身偵測目標物之溫度以及熱電元件10之周遭環境溫度,進而確保目標物實際溫度之精準度。1. The thermal radiation
二、本發明之熱輻射溫度量測系統100無須額外設置熱敏電阻,僅需透過偵測切換模組20控制熱電元件10進行兩種模態之溫度量測;藉此,能夠有效降低系統成本,而且能夠縮小晶片面積及提高製造良率。2. The thermal radiation
三、本發明之熱輻射溫度量測系統100,能夠控制熱電元件10於第一量測模態或第二量測模態時,先進行延遲狀態再進入偵測狀態;藉此,能夠避免熱電元件10輸出雜訊,影響接續之偵測精準度,進而提升本發明量測精準度。3. The thermal radiation
四、本發明熱輻射溫度量測系統100之放大器40能夠作為訊號放大處理,以及搭配偵測切換模組20控制熱電元件10作為兩種溫度量測模態之雙重功效。4. The
以上所舉實施例僅用以說明本發明而已,非用以限制本發明之範圍。舉凡不違本發明精神所從事的種種修改或變化,俱屬本發明意欲保護之範疇。The above-mentioned embodiments are only used to illustrate the present invention, not to limit the scope of the present invention. Any modifications or changes that do not violate the spirit of the present invention are within the scope of the invention to be protected.
100:熱輻射溫度量測系統 40:放大器 10:熱電元件 50:參考電壓模組 11:第一端點 51:第一電阻 12:第二端點 52:第二電阻 20:偵測切換模組 D1:第一延遲狀態 30:中央處理模組 D2:第二延遲狀態 31:控制器 R1:第一偵測狀態 311:時間單元 R2:第二偵測狀態 32:訊號轉換器 VDD:電源端點100: thermal radiation temperature measurement system 40: amplifier 10: Thermoelectric element 50: Reference voltage module 11: First endpoint 51: First resistance 12: second endpoint 52: Second resistance 20: Detection switching module D1: First delay state 30: central processing module D2: Second delay state 31: Controller R1: first detection status 311: time unit R2: second detection status 32: Signal converter VDD: power supply endpoint
圖1係本發明系統架構圖。 圖2係本發明電路實施例示意圖。 圖3係本發明第一量測模態之等效電路示意圖。 圖4係本發明第二量測模態之等效電路示意圖。 圖5係本發明時間控制單元控制流程示意圖。 FIG. 1 is a system architecture diagram of the present invention. 2 is a schematic diagram of an embodiment of the circuit of the present invention. 3 is a schematic diagram of an equivalent circuit of the first measurement mode of the present invention. 4 is a schematic diagram of an equivalent circuit of a second measurement mode of the present invention. 5 is a schematic diagram of the control flow of the time control unit of the present invention.
100:熱輻射溫度量測系統 100: thermal radiation temperature measurement system
10:熱電元件 10: Thermoelectric element
20:偵測切換模組 20: Detection switching module
30:中央處理模組 30: central processing module
31:控制器 31: Controller
311:時間單元 311: time unit
32:訊號轉換器 32: Signal converter
40:放大器 40: amplifier
50:參考電壓模組 50: Reference voltage module
Claims (10)
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TW108103488A TWI691709B (en) | 2019-01-30 | 2019-01-30 | Thermal radiation temperature measurement system |
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TWI691709B true TWI691709B (en) | 2020-04-21 |
TW202028706A TW202028706A (en) | 2020-08-01 |
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Citations (5)
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US5614716A (en) * | 1996-04-26 | 1997-03-25 | Infratemp, Inc. | Alternating current method and apparatus for ambient temperature compensation for modulated energy sensors |
WO2001050102A1 (en) | 2000-01-07 | 2001-07-12 | Kazuhito Sakano | Thermopile sensor and temperature measuring method by infrared rays |
TW461497U (en) * | 1999-02-02 | 2001-10-21 | Chen Chao Wang | Probe head of infrared thermometer |
CN102203574A (en) * | 2008-10-21 | 2011-09-28 | 生命扫描有限公司 | Infrared temperature measurement of strip |
TWI636251B (en) * | 2017-06-23 | 2018-09-21 | 中原大學 | Thermal characteristics measuring device |
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US5614716A (en) * | 1996-04-26 | 1997-03-25 | Infratemp, Inc. | Alternating current method and apparatus for ambient temperature compensation for modulated energy sensors |
TW461497U (en) * | 1999-02-02 | 2001-10-21 | Chen Chao Wang | Probe head of infrared thermometer |
WO2001050102A1 (en) | 2000-01-07 | 2001-07-12 | Kazuhito Sakano | Thermopile sensor and temperature measuring method by infrared rays |
CN102203574A (en) * | 2008-10-21 | 2011-09-28 | 生命扫描有限公司 | Infrared temperature measurement of strip |
TWI636251B (en) * | 2017-06-23 | 2018-09-21 | 中原大學 | Thermal characteristics measuring device |
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