TWI688646B - Polishing composition and polishing composition set - Google Patents

Abstract

The present invention provides a polishing composition that effectively reduces surface defects. The polishing composition provided by the present invention includes abrasive particles, water-soluble polymers, and basic compounds. The water-soluble polymer includes polymer A satisfying both of the following conditions (1) and (2).　　 (1) One molecule contains vinyl alcohol units and non-vinyl alcohol units.　　 (2) The adsorption parameter calculated by [(C1-C2)/C1]×100 is 5 or more. Here, C1 is the total amount of organic carbon contained in the test liquid L1 containing 0.017% by weight of the polymer A and 0.009% by weight of ammonia. The above-mentioned C2 is the total amount of organic carbon contained in the upper liquid by centrifuging the test liquid L2 to precipitate the abrasive particles. The test liquid L2 contains colloidal silicon dioxide with a BET diameter of 35 nm of 0.46% by weight. Polymer A is 0.017% by weight and ammonia is 0.009% by weight.

Description

Polishing composition and polishing composition set

[0001] The present invention relates to a polishing composition and a polishing composition set. This application claims priority based on Japanese Patent Application No. 2016-170184 filed on August 31, 2016, and the entire contents of the application are incorporated into this specification as reference content.

[0002] The surface of materials such as metals, semi-metals, non-metals, and oxides thereof is polished using a polishing composition containing abrasive particles. For example, the surface of the silicon substrate used in the manufacture of semiconductor products and the like is generally completed by a lapping step and a polishing step to complete a high-grade mirror surface. The above polishing step typically includes a preliminary polishing step and a finishing polishing step. Examples of technical documents concerning polishing compositions mainly used for polishing semiconductor substrates such as silicon wafers include Patent Documents 1 to 3. [Prior Art Literature] [Patent Literature] 　　[0003] 　　[Patent Literature 1] International Publication No. 2014/148399 [Patent Literature 2] Japanese Patent Application Publication 2015-109423 [Patent Literature 3] Japanese Patent Application Gazette 2016-56220

[Problems to be Solved by the Invention] 　　 [0004] The polishing composition used in the finish polishing step is required to achieve the performance of a surface with a low haze and few surface defects after polishing. The above-mentioned finishing polishing step may be, for example, a silicon wafer or other semiconductor substrate finishing polishing step. Many polishing compositions used for this purpose include abrasive grains and water, and further include water-soluble polymers for the purpose of protecting the surface of the object to be polished or improving wettability. Among them, hydroxyethyl cellulose (HEC) can be mentioned as a water-soluble polymer that is widely used.　　 [0005] However, since HEC is a cellulose derived from natural products, it has limitations in chemical structure or purity control compared to synthetic polymers. For example, the range of weight average molecular weight (Mw) or molecular weight distribution of HEC that is easily available on the market is limited. Here, the molecular weight distribution refers to the ratio of Mw log average molecular weight (Mn). In addition, since HEC uses natural materials as raw materials, it is difficult to highly reduce foreign substances that can cause surface defects, or micro-aggregation caused by local disturbances in the polymer structure, and the amount or degree of such foreign substances is also easy Uneven. In the future, it is extremely beneficial to provide a polishing composition that can effectively reduce surface defects in a composition that does not use HEC as an essential component under the condition that the requirements for surface quality after polishing will gradually become stricter. [0006] In view of this situation, an object of the present invention is to provide a polishing composition that effectively reduces surface defects. Another related invention is to provide a polishing composition set including the polishing composition. [Means to solve the problem] 　　[0007] As one of the defects observed on the polishing surface after polishing with the polishing composition, there are known light point defects (LPD, Light Point Defects) and the light spot cannot be removed Defect (LPD-N, Light Point Defect Non-cleanable). LPD refers to foreign objects generally called particles. On the other hand, LPD-N refers to defects that cannot be eliminated even by treatments such as polishing, washing, and drying, and mainly refers to surface defects from the structure of the object to be polished itself. As a result of careful review, the inventors discovered a polishing composition that effectively reduces the number of LPD-N, and completed the present invention.　　 [0008] The polishing composition provided in this specification includes abrasive particles, water-soluble polymers, and basic compounds. The water-soluble polymer contains the polymer A satisfying both of the following conditions (1) and (2).　　 (1) One molecule contains vinyl alcohol units and non-vinyl alcohol units.　　 (2) The adsorption parameter calculated by the following formula is 5 or more. Adsorption parameter=[(C1-C2)/C1]×100; 　　Here, C1 in the above formula is the test solution L1 consisting of the above polymer A 0.017% by weight, ammonia 0.009% by weight, and the remainder made of water The total amount of organic carbon contained in. C2 in the above formula is the total amount of organic carbon contained in the upper liquid by centrifuging the test solution L2 to precipitate the silica particles. The test solution L2 contains colloidal silica 0.46 with a BET diameter of 35 nm % By weight, 0.009% by weight of ammonia, 0.017% by weight of the above-mentioned polymer A, and the rest is composed of water.　　The polishing composition can effectively reduce surface defects on the polished surface. The above-mentioned polishing composition effectively reduces the number of defects detected as LPD-N on the surface after polishing, for example. [0009] This specification further provides a polishing composition set, which includes: a polishing composition containing any of the polishing compositions disclosed herein, and the polishing composition formed by the above polishing composition The polishing composition used in the previous stage is used in the previous stage. The aforementioned front-stage polishing composition includes abrasive grains, water-soluble polymer, and basic compound. By using such a polishing composition set to sequentially perform the previous polishing step and the finishing polishing step, the surface quality after finishing polishing can be effectively improved.

[0159] 如表1所示，在與使用不包含滿足該等之水溶性高分子之研磨用組成物實施完工研磨之比較例1～3相比，使用包含滿足條件(1)、(2)雙方之水溶性高分子之研磨用組成物實施完工研磨之實施例1～4及實施例5在完工研磨後之表面上之LPD-N數及霾度明顯減低。從上述表所示之結果，得知藉由使用BET徑較小之磨粒或配合界面活性劑，能更加改善LPD-N數及霾度(實施例2、3)。又，得知在前段研磨步驟中藉由使用包含水溶性高分子之前段研磨用組成物，可更加改善完工研磨後之LPD-N(實施例4)。 　　[0160] 以上，已詳細地說明本發明之具體例，但該等僅為例示，而並非係限制申請專利範圍者。申請專利範圍記載之技術係包含將以上例示之具體例予以各種變形、變更者。[0010] Hereinafter, suitable embodiments of the present invention will be described. Moreover, things other than those not specifically mentioned in this specification and necessary for the implementation of the present invention can be understood as design matters that can be achieved by those with ordinary knowledge in the technical field to which the invention belongs based on the prior art in the field of the present invention . The present invention can be implemented according to the contents disclosed in this specification and the technical knowledge in the field of the present invention.　　[0011] <Abrasive grains> 　　The abrasive grain materials and physical properties included in the polishing composition disclosed herein are not particularly limited, and can be appropriately selected according to the purpose of use or use state of the polishing composition. Examples of the abrasive particles include inorganic particles, organic particles, and organic-inorganic composite particles. Specific examples of the inorganic particles include silicon dioxide particles, aluminum oxide particles, cerium oxide particles, chromium oxide particles, titanium dioxide particles, zirconium oxide particles, magnesium oxide particles, manganese dioxide particles, zinc oxide particles, and red shells. (Bengala) oxide particles such as particles; nitride particles such as silicon nitride particles and boron nitride particles; carbide particles such as silicon carbide particles and boron carbide particles; diamond particles; carbonates such as calcium carbonate or barium carbonate Wait. Specific examples of the organic particles include polymethacrylic acid methyl (PMMA) particles, poly(meth)acrylic acid particles, polyacrylonitrile particles, and the like. One type of such abrasive system may be used alone, or two or more types may be used in combination. In addition, (meth)acryloyl group in this specification is meant to include acryloyl group and methacryloyl group. Similarly, in this specification, (meth)acryloyl group is meant to include acryloyl group and methacryloyl group. [0012] As the above-mentioned abrasive particles, inorganic particles are preferred, and particles composed of metal or semi-metal oxides are also preferred, and silica particles are particularly preferred. In the polishing of an object to be polished having a surface made of silicon, such as a silicon wafer, which will be described later, for example, in a polishing composition that can be used for finishing polishing, it is particularly meaningful to use silicon dioxide particles as abrasive particles. The technique disclosed herein can be ideally implemented in a state where, for example, the above-mentioned abrasive system is substantially composed of silicon dioxide particles. Here, "substantially" means 95% by weight or more of the particles constituting the abrasive particles, preferably 98% by weight or more, more preferably 99% by weight or more of silica particles, and including 100% by weight of silica The matter of particles.　　 [0013] Specific examples of the silica particles include colloidal silica, fumed silica, precipitated silica, and the like. The silicon dioxide particle system may be used alone or in combination of two or more. From the viewpoint that a polished surface with excellent surface quality can be easily obtained after polishing, it is particularly preferable to use colloidal silica. As the colloidal silica, for example, colloidal silica prepared by ion exchange method using sodium silicate (Na silicate) as a raw material, or colloidal silica prepared by an alkoxide method. The alkoxide colloidal silica refers to the colloidal silica produced by the hydrolysis condensation reaction of alkoxysilane. The colloidal silica system can be used alone or in combination of two or more.　　 [0014] The true specific gravity of the abrasive constituent material is preferably 1.5 or more, preferably 1.6 or more. Here, the true specific gravity of the material constituting the abrasive particles refers to the true specific gravity of silicon dioxide constituting the silica particles when, for example, abrasive particles composed of silica particles. Hereinafter, it is also called the true specific gravity of abrasive grains. By increasing the true specific gravity of the abrasive particles, the physical grinding ability of the abrasive particles tends to become higher. When the physical polishing ability of the abrasive grains becomes higher, in general, the local pressure given by the abrasive grains to the surface of the object to be polished tends to increase. Therefore, by increasing the true specific gravity (true density) of the abrasive grains, the effect obtained by including the polymer A disclosed herein in the polishing composition can be more effectively exerted. From this viewpoint, the true specific gravity is particularly preferably 1.7 or more abrasive grains. The upper limit of the true specific gravity of the abrasive particles is not particularly limited, but is typically 2.3 or less, for example 2.2 or less. As the true specific gravity of the abrasive particles, the measurement value obtained by the liquid substitution method using ethanol as the substitution fluid can be used. The above-mentioned abrasive particle system may be, for example, silicon dioxide particles.　　 [0015] The BET diameter of the abrasive particles is not particularly limited, from the viewpoint of polishing efficiency, etc., preferably 5 nm or more, preferably 10 nm or more. From the viewpoint of obtaining a higher polishing effect, for example, from the viewpoint of more effectively exerting the effect of reducing haze or removing defects, the above-mentioned BET diameter is preferably 15 nm or more, preferably 20 nm or more, and more than 20 nm. Better. In addition, from the viewpoint of suppressing the localized pressure exerted by the abrasive particles on the surface of the object to be polished, the BET diameter of the abrasive particles is preferably 100 nm or less, preferably 50 nm or less, and more preferably 40 nm or less. The technology disclosed here can be used from the viewpoint of making it easier to obtain a higher-grade surface, such as a surface with a small number of LPD-N and a low degree of haze, etc., with a BET diameter of 35 nm or less, preferably less than 35 nm, and more Preferably, it is 32 nm or less, for example, under 30 nm of abrasive grains. The above-mentioned abrasive particle system may be, for example, silicon dioxide particles.　　 [0016] In addition, in this specification, the BET diameter refers to the specific surface area (BET value) measured by the BET method, using the BET diameter [nm]=6000/(true density [g/cm³ ]×BET value [m² /g]) The particle diameter calculated by the formula. For example, in the case of silica particles, the BET diameter [nm] = 2727/BET value [m² /g] Calculate the BET diameter. The measurement of the specific surface area can be performed using, for example, a surface area measuring device manufactured by Micromelitex Corporation under the trade name "Flow Sorb II 2300".　　 [0017] The shape (outer shape) of the abrasive particles may be spherical or non-spherical. Specific examples of non-spherical particles include peanut shape, cocoon shape, golden sugar shape, rugby shape, and the like. The above peanut shape refers to the shape of the peanut shell. For example, it is desirable to use abrasive particles having a peanut shape, for example.　　 [0018] The average aspect ratio of the abrasive particles, that is, the average value of the long diameter/short diameter ratio of the abrasive particles is not particularly limited, but is theoretically 1.0 or more, preferably 1.05 or more, and more preferably 1.1 or more. By increasing the average aspect ratio, higher grinding efficiency can be achieved. In addition, the average aspect ratio of the abrasive grains is preferably 3.0 or less, preferably 2.0 or less, and more preferably 1.5 or less from the viewpoint of reducing scratches and the like.　　 [0019] The shape (outer shape) or average aspect ratio of the abrasive grains can be grasped by, for example, observation by an electron microscope. As a specific operation sequence for judging the average aspect ratio, for example, a scanning electron microscope (SEM) can be used. For a predetermined number of silicon dioxide particles that can identify the shape of individual particles, the smallest rectangle circumscribed to the individual particle portrait is drawn . The aforementioned predetermined number refers to, for example, 200. Furthermore, regarding the rectangle drawn for each particle portrait, the length of the long side is set to the value of the major axis, the length of the short side is set to the value of the minor axis, and the value of the major axis is divided by the value of the minor axis. The obtained value is calculated as the ratio of the major axis to the minor axis of each abrasive grain, that is, the aspect ratio. The average aspect ratio can be obtained by arithmetically averaging the aspect ratio of the specified number of particles.　　 [0020] <Water-soluble polymer> 　　 The polishing composition disclosed herein contains a water-soluble polymer. As the water-soluble polymer, a polymer having at least one functional group selected from a cationic group, an anionic group and a nonionic group in the molecule may be used alone, or two or more kinds may be used in combination. More specifically, for example, a polymer selected from a molecule having a hydroxyl group, a carboxyl group, an oxy group, a sulfonic acid group, a first-stage amide structure, a heterocyclic structure, a vinyl structure, a polyoxyalkylene structure, etc. can be used One or two or more polymers are used as water-soluble polymers. From the standpoint of reducing aggregates or improving detergency, etc., in one aspect, a nonionic polymer can be preferably used as a water-soluble polymer.　　 [0021] (Polymer A) 　　 The polishing composition in the technique disclosed herein contains polymer A as a water-soluble polymer satisfying both of the above conditions (1) and (2).　　 [0022] [Condition (1)] 　　 The condition (1) that polymer A should satisfy is that it has vinyl alcohol units and non-vinyl alcohol units in one molecule. That is, a part of one molecule of the polymer A is composed of vinyl alcohol units, and the other part is composed of non-vinyl alcohol units. Here, the vinyl alcohol unit (hereinafter also referred to as "VA unit") refers to the following chemical formula: -CH₂ -CH(OH)-; the structural part indicated. The VA unit is produced by, for example, hydrolyzing (also referred to as saponification) a repeating unit of a structure obtained by vinyl polymerizing a vinyl ester monomer such as vinyl acetate. In addition, the above-mentioned non-vinyl alcohol unit (hereinafter also referred to as "non-VA unit") refers to a repetitive structure part constituted by a structure different from the VA unit. Polymer A may contain only a single type of non-VA units, or it may contain more than two types of non-VA units. [0023] In one aspect of the technology disclosed herein, a non-VA unit system can be included in the polymer A as a part of the repeating unit constituting the polymer A. The polymer A having such a structure can be understood as a copolymer containing VA units and non-VA units as repeating units constituting the polymer A. In this form, by including non-VA units, the adsorption parameters of the polymer A including VA units can be adjusted to the ideal range disclosed here. The non-VA unit included as a repeating unit constituting the polymer A may be selected from, for example, an oxyalkylene group, a carboxyl group, a sulfonic acid group, an amine group, a hydroxyl group, an amide group, an amide group, a nitrile group, an ether group, The repeating unit of at least one structure of an ester group and these salts. The proportion of VA unit moles in the mole number of the fully repeating units constituting polymer A is not particularly limited as long as it satisfies the condition (2). The above ratio may be, for example, 5% or more, or 10% or more. The abrasive grains and the object to be polished, for example, from the viewpoint of the affinity for the silicon wafer, in one aspect, the polymer A having the above-mentioned ratio of 20% or more, such as 30% or more, can be preferably used. In some aspects, the above ratio may be above 50%, above 75%, or above 85%. In addition, from the viewpoint of being suitable for easily exerting the effect of combining VA units and non-VA units, the ratio of moles of VA units to the moles of the fully repeating units constituting the polymer A may be, for example, 99% or less, It can be 98% or less or 97% or less. In some aspects, the above ratio may be, for example, 95% or less, 90% or less, 80% or less, or 70% or less. [0024] In another aspect of the technology disclosed herein, the non-VA unit can be included in the polymer A in a form located at at least one end of the polymer A including the VA unit. Here, the terminus of polymer A refers to the terminus of the main chain of polymer A. When polymer A has a side chain, the terminus of the side chain can also be the terminus of polymer A. In addition, the non-VA unit located at the end of the polymer A means that the prescribed range including the end is composed of non-VA units. The polymer A having such a structure can be understood as a polymer in which the end of a polymer chain containing VA units is modified or modified by non-VA units. The polymer chain system including the above VA unit may be a polymer chain consisting essentially of only VA unit. In this form, by including non-VA units, the adsorption parameters of the polymer A including VA units can be adjusted to the ideal range disclosed herein. Non-VA units can also be located at both ends of the main chain of polymer A, or can be located at only one end. When the polymer A has a side chain, the non-VA unit may be located at only one side or at both ends of the main chain, or at all or part of the side chain. For example, the polymer A having a structure in which non-VA units are located only at the end of one side of the main chain can be preferably used. The non-VA unit system at the end of the polymer A may include, for example, a hydrocarbon group selected from the group consisting of alkyl, aryl, arylalkyl, etc.; alkoxy, aryloxy, arylalkoxy, oxyalkylene, etc. Hydrocarbyl groups; carboxyl groups, sulfonic acid groups, amine groups, hydroxyl groups, amido groups, imidate groups, imino groups, formamidine groups, imidazoline groups, nitrile groups, ether groups, ester groups, and salts of these; At least one structure of the group. The weight ratio of non-VA units in the weight of the polymer A is not particularly limited as long as it satisfies the condition (2). The above ratio may be, for example, 25% or less, 10% or less, 5% or less, or 1% or less. In addition, the method of introducing a non-VA unit to the end of the polymer is not particularly limited, and a known method can be suitably used. As an example of a method of introducing non-VA units, a method of radical polymerization using a polymerization initiator containing a structure of non-VA units can be mentioned. For example, by using 2,2'-azobis(2-carboxamidopropane) as a polymerization initiator to perform free-radical polymerization, a carboxamido group can be introduced at the polymer terminal. As another example of the method of introducing non-VA units, a method of using a chain transfer agent containing a structure of non-VA units can be mentioned. For example, it is possible to introduce an alkyl group at the end of the polymer by performing polymerization in the presence of an alkyl group-containing mercaptan such as lauryl mercaptan. As another example of the method of introducing non-VA units, a method of using a polymerization stopper including a structure containing non-VA units can be mentioned.　　[0025] [Condition (2)] 　　 The condition (2) that polymer A should satisfy is by the following formula: Adsorption parameter=[(C1-C2)/C1]×100; the calculated adsorption parameter is 5 or more. Here, C1 in the above formula is the total amount of organic carbon contained in the test liquid L1 containing 0.017% by weight of the above-mentioned polymer A and 0.009% by weight of ammonia, and the remaining portion is made of water. C2 in the above formula is a test solution L2 consisting of 0.46% by weight of colloidal silica with a BET diameter of 35 nm, 0.017% by weight of the above-mentioned polymer A, and 0.009% by weight of ammonia, and the remainder is made of water. The total amount of organic carbon contained in the supernatant after the silica particles are precipitated.　　 [0026] The above test liquid L2 contains silicon dioxide particles in addition to the test liquid L1. When a centrifugal separation treatment is applied to this test solution L2, the water-soluble polymer adsorbed on the silica particles will precipitate together with the silica particles, and will be removed from the total amount of organic carbon contained in the above clarified solution. Therefore, the larger the value of the above adsorption parameter, the greater the proportion of the water-soluble polymer adsorbed on the silica abrasive particles among the total amount of the water-soluble polymer contained in the test solution L2.　　 [0027] In addition, the centrifugal separation system for the test liquid L2 can be, for example, a centrifugal separator manufactured by Beckman Coulter Company, type "Avanti HP-30I", at a rotation number of 20,000 rpm for 30 minutes. In addition, the total amount of organic carbon contained in the test solution L1 and the total amount of organic carbon contained in the clarified liquid after the centrifugal separation process is applied to the test solution L2 can be measured by measuring the test solution L1 and the above Obtained from the total organic carbon content (TOC) of clear juice. The measurement of TOC can be performed using, for example, an all-organic carbon meter manufactured by Shimadzu Corporation (combustion catalyst oxidation method, type "TOC-5000A") or its equivalent. [0028] According to the polishing composition including the polymer A satisfying the above conditions (1) and (2), surface defects on the surface after polishing (for example, the number of defects detected as LPD-N) can be effectively reduced. It is not intended to be bound by theory, but the reason for obtaining this effect is considered as follows, for example. That is, since the polymer A satisfying the above condition (1) and condition (2) contains VA units, it exhibits good affinity to the object to be polished, such as a silicon wafer. On the other hand, in general, the VA unit is difficult to have adsorption for abrasive particles such as silica particles, but the above-mentioned polymer A has adsorption for silica particles to a degree that satisfies a predetermined adsorption parameter. Therefore, according to the polymer A containing VA units and having improved adsorption, and in the polishing using the polishing composition containing the polymer A, the above-mentioned polymer A can be reduced by operating as a buffer material around the abrasive grains The local pressure that the abrasive particles may exert on the surface of the object to be polished. Based on this, it is believed that the occurrence of surface defects caused by the above pressure is suppressed, and the LPD-N number is effectively reduced.　　 [0029] In one aspect of the technology disclosed herein, as the polymer A, the above-mentioned adsorption parameter can be used, for example, 10 or more. The adsorption parameter of the polymer A may be 15 or more, 25 or more, 40 or more, 50 or more, or 60 or more. By increasing the adsorption parameters, the polymer A included in the polishing composition tends to be used more efficiently. Moreover, in one aspect, the adsorption parameter of the polymer A may be, for example, 99 or less, 95 or less, 85 or less, or 75 from the viewpoint of ease of acquisition or synthesis of the polymer A. The following may also be 70 or less. The technique disclosed here can be suitably implemented even when the polymer A having an adsorption parameter of 50 or less, 30 or less, or 20 or less is used. The adsorption parameters can be determined by, for example, the type of non-VA units contained in the repeating units constituting polymer A, the molecular structure of polymer A, the molar ratio of VA units contained in polymer A to non-VA units, and the polymer The configuration of non-VA units in A is adjusted. [0030] In one aspect of the technology disclosed herein, as the polymer A satisfying the above conditions (1) and (2), it is desirable to use a vinyl alcohol-based segment and a non-vinyl alcohol-based chain in one molecule Copolymer of segments. Here, in this specification, the vinyl alcohol-based segment refers to a segment having a VA unit as the main repeating unit. Hereinafter also referred to as "Segment S_A ". In this specification, the non-vinyl alcohol-based segment refers to a segment having a non-VA unit as the main repeating unit. Hereinafter also referred to as "Segment S_B ". In addition, in this specification, unless otherwise noted, the main repeating unit means that the repeating unit contains more than 50 weight% or more.　　[0031] has segment S in the same molecule_A With segment S_B The polymer A has a segment S_A And it shows a moderate affinity to the surface of the object to be polished, so it is suitable to reduce the degree of haze or improve the wettability. Also, use and segment S_A Segment S existing in the same molecule_B , That is, with the segment S_A Chemically Bonded Segment S_B In addition, the affinity of the entire polymer A to the abrasive particles can be adjusted, and the polymer A satisfying the above (2) can be suitably realized. Below, there is a segment S in a molecule_A With segment S_B Polymer A is labeled "Polymer A_SAB "Situation.　　[0032] Polymer A_SAB The structure is to contain at least one segment S in the same molecule_A With at least one segment S_B , And can be selected in a manner that satisfies the condition (2), and is not particularly limited. Polymer A_SAB The system may include, for example, the segment S_A With segment S_B Block copolymer, graft copolymer or random copolymer. The structure of the above graft copolymer is not particularly limited, and may be, for example, segment S_A (Main chain) there is a segment S grafted on it_B (Side chain) structure of the graft copolymer can also be segment S_B (Main chain) there is a segment S grafted on it_A (Side chain) structure of the graft copolymer. From the segment S_B Of the choice to easily adjust the adsorption of the polymer A, in one aspect, the graft copolymer can be ideally used as the polymer A_SAB . Can use, for example, the segment S_A There is a segment S on the graft_B Polymer A_SAB .　　[0033] [Chain S_A ] 　　Segment S_A The repeating unit may include only VA units, and may also include VA units and non-VA units. In the segment S_A In the aspect of including a non-VA unit, the non-VA unit may be, for example, selected from an oxyalkylene group, a carboxyl group, a sulfonic acid group, an amine group, a hydroxyl group, an amide group, an amide group, a nitrile group, an ether group, and an ester A repeating unit of at least one structure of the base and the salt. Segment S_A The system may include only one type of non-VA units, or two or more types of non-VA units.　　[0034] As a segment S_A Suitable examples of non-VA units that can be included include, for example, alkyl vinyl ether units (ie, repeating units derived from alkyl vinyl ethers), or monocarboxylic acid vinyl ester units (ie, derived from mono Repeating unit of vinyl carboxylate) etc. Non-limiting examples of the alkyl vinyl ethers include propyl vinyl ether, butyl vinyl ether, 2-ethylhexyl vinyl ether, and the like. Preferred specific examples of the above-mentioned alkyl vinyl ether unit include propyl vinyl ether unit, butyl vinyl ether unit, 2-ethylhexyl vinyl ether unit and the like. In addition, as non-limiting examples of the above-mentioned vinyl monocarboxylates, there may be mentioned vinyl acetate, vinyl propionate, vinyl butyrate, vinyl isobutyrate, vinyl caproate, caprylic acid. Vinyl ester, vinyl laurate, vinyl myristate, vinyl palmitate, vinyl stearate, vinyl t-valerate, etc. Preferred specific examples of the above-mentioned monocarboxylic acid vinyl ester units include vinyl acetate units, vinyl propionate units, and caproic acid vinyl ester units.　　[0035] constitutes the segment S_A The ratio of the number of moles of VA units in the number of moles of fully repeating units is typically 50% or more, usually 65% or more is appropriate, preferably 75% or more, such as 80% or more. In a preferred aspect, the segment S is formed_A The ratio of the number of moles of VA units in the number of moles of fully repeating units may be, for example, 90% or more, 95% or more, or 98% or more. Make up the segment S_A Substantially 100% of the repeating units can be VA units. Here "substantially 100%" means that at least the segment S is not deliberately_A Contains non-VA units.　　[0036] [Chain S_B ] 　　Segment segment S_B The non-VA unit system may be, for example, a salt selected from an oxyalkylene group, a carboxyl group, a sulfonic acid group, an amine group, a hydroxyl group, an amide group, an imidate group, a nitrile group, an ether group, an ester group, and the like A repeating unit of at least one structure. Make up the segment S_B The non-VA units can be a single type, or more than two types.　　 [0037] In one aspect, the segment S_B It may be a segment containing an oxyalkylene unit as the main repeating unit, that is, an oxyalkylene-based segment. The ratio of the number of moles of oxyalkylene units to the number of moles of fully repeating units contained in the oxyalkylene chain segment is not particularly limited, and a polymer that satisfies the above condition (2) can be formed A way to set. The above ratio may be, for example, more than 50%, may be 70% or more, may be 85% or more, or may be 95% or more. The repeating units contained in the oxyalkylene-based segment may be substantially all oxyalkylene units. [0038] Examples of oxyalkylene units include oxyethylene units, oxypropylene units, and oxybutylene units. Such an oxyalkylene unit may be a repeating unit derived from the corresponding alkylene oxide. The oxyalkylene units contained in the oxyalkylene chain segment may be a single type, or two or more types. For example, it may be an oxyalkylene segment comprising a combination of oxyethylidene units and oxypropylene units. [0039] In an oxyalkylene-based segment containing two or more types of oxyalkylene units, the oxyalkylene units may be random copolymers of the corresponding alkylene oxides or block copolymers Thing. The molar ratio of each oxyalkylene unit is not particularly limited, and can be set in such a manner that the polymer A satisfying the above condition (2) is formed. In one aspect, the proportion of oxyalkylene-based segments in the number of moles of oxyethyl units in the total number of moles of fully repeating units contained in the segment may be more than 50%, which may be 70% or more, 85% or more, 95% or more, or 100%.　　[0040] In another aspect, the segment S_B It may be a segment containing an N-vinyl monomer unit as a main repeating unit, that is, an N-vinyl segment. The ratio of the number of moles of N-vinyl type monomer units to the number of moles of all repeating units contained in the N-vinyl-based segment is not particularly limited, and can be formed to satisfy the above conditions (2) Polymer A. The above ratio may be, for example, more than 50%, 70% or more, 85% or more, or 95% or more. Substantially all of the repeating units contained in the N-vinyl-based segment may be N-vinyl monomer units. [0041] The N-vinyl monomer unit contained in the N-vinyl-based segment may be a repeating unit derived from an N-vinyl lactam-type monomer or an N-vinyl chain amide as described later. . Segment S_B For example, N-vinylpyrrolidone (VP) or N-vinylcaprolactam (VC) derived from a repeating unit of N-vinyllactamylamine type monomer as the main repeating unit may be N- Vinyl-based segments, that is, N-vinyllactam-based segments. In one aspect, the ratio of the number of moles of VP units in the number of moles of fully repeating units contained in the segment of the N-vinyllactam series segment may be, for example, more than 50%. 70% or more, 85% or more, 95% or more, or 100%. Here VP unit refers to a repeating unit derived from VP. [0042] [Random Copolymers Containing VA Units and VP Units] 　　 In some aspects, the polymer A satisfying the above conditions (1) and (2) may be a random copolymer containing the VA units and VP units described above Thing. The random copolymer can be formed by denaturing a random copolymer that can be converted into VA units and N-vinylpyrrolidone. For example, a random copolymer containing VA units and VP units can be obtained by partially saponifying or completely saponifying a random copolymer of vinyl acetate and N-vinylpyrrolidone. The molar ratio of VA units: VP units in the random copolymer can be, for example, 50:50 or more, 65:35 or more, 70:30 or more, 75:25 or more, or 80: 20 or more. In some aspects, the molar ratio of VA units: VP units may be 85:15 or more, 90:10 or more, or 90:10. In addition, the molar ratio of VA unit: VP unit may be, for example, 99:1 or less, 98:2 or less, or 97:3 or less. In some aspects, the molar ratio of VA units: VP units can be 95:5 or less, or 93:7 or less.　　 [0043] [Mw and Mn of polymer A] The weight average molecular weight (Mw) of polymer A is not particularly limited. The Mw of polymer A is usually 1.0×10⁴ The above is appropriate, it can be 1.2×10⁴ Above, it can also be 1.5×10⁴ the above. As the Mw of polymer A increases, the surface wettability after polishing tends to increase. M of polymer A is usually 100×10⁴ The following is appropriate, with 50×10⁴ The following is better, it can be 30×10⁴ Below, for example, 20×10⁴ the following. By reducing the Mw of the polymer A, there is a tendency for the polymer A to absorb the abrasive particles more uniformly and reduce the localized pressure exerted on the surface of the object to be polished. In one aspect, the Mw of polymer A may be 15×10⁴ The following can be 10×10⁴ The following can be 7×10⁴ The following can be 5×10⁴ The following can be 4×10⁴ The following, for example, can be 3 × 10⁴ the following.　　 [0044] Polymer A contains a segment S in a molecule_A With segment S_B In the case of a block copolymer, the Mw of each segment constituting the block copolymer is the segment S_A And segment S_B The individual Mw is not particularly limited. In one aspect, the Mw of each segment described above may be, for example, 500 or more, usually 1000 or more, suitably 3000 or more, and more preferably 5000 or more. The Mw of each segment is usually less than the Mw of polymer A, and can be 30×10⁴ Below, or 10×10⁴ Below, or 5×10⁴ Below, or 2×10⁴ The following can also be 1×10⁴ the following. [0045] In the polymer A contained in the polishing composition disclosed herein, the relationship between the weight average molecular weight (Mw) and the number average molecular weight (Mn) is not particularly limited. From the viewpoint of preventing the generation of aggregates, etc., the molecular weight distribution (Mw/Mn) of the polymer A is usually preferably 10.0 or less, preferably 7.0 or less, and for example, 5.0 or less. In one aspect, the Mw/Mn of the polymer A may be 3.0 or less, or 2.0 or less. (Polymer B) The water-soluble polymer in the polishing composition disclosed herein may include, in addition to polymer A, a polymer that should not be treated as polymer A, that is, it may also contain polymers that do not satisfy the above conditions ( 1) One or both of the polymers in condition (2). Hereinafter, a polymer that should not be used for polymer A is also referred to as "polymer B". By using polymer B, one or more of the effects of reducing the number of LPD-N, reducing the degree of haze, improving the wettability, and improving the dispersibility of the abrasive particles can be achieved. The polymer B system may be used alone or in combination of two or more. [0047] As the polymer B, for example, a polymer containing an oxyalkylene unit, a polymer containing a nitrogen atom, a cellulose derivative, a starch derivative, a polymer containing a vinyl alcohol unit, etc. can be suitably selected and used. It is one or both parties that do not satisfy the condition (1) and condition (2). [0048] As a polymer containing an oxyalkylene unit, for example, polyethylene oxide (PEO), or ethylene oxide (EO) and propylene oxide (PO) or butylene oxide (BO) Block copolymers, random copolymers of EO and PO or BO, etc. Among them, block copolymers of EO and PO or random copolymers of EO and PO are also preferred. The block copolymer of EO and PO may be a diblock copolymer, a triblock copolymer, etc., including a PEO block and a polypropylene oxide (PPO) block. Examples of the above-mentioned triblock copolymers include PEO-PPO-PEO para-block copolymers and PPO-PEO-PPO triblock copolymers. Usually PEO-PPO-PEO triblock copolymer is preferred.　　 [0049] In addition, the copolymer in this specification, unless otherwise noted, is intended to include various copolymers such as random copolymer, alternating copolymer, block copolymer, graft copolymer and the like. Non-limiting examples of polymers containing nitrogen atoms include polymers containing N-vinyl monomer units such as N-vinyllactam or N-vinyl chain amide; imine derivatives ; Polymers containing N-(meth)acryloyl monomer units;　　 [0051] An example of a polymer containing an N-vinyl type monomer unit includes a polymer including a repeating unit derived from a monomer having a nitrogen-containing heterocyclic ring. As an example of a nitrogen-containing heterocyclic ring, a lactam ring may be mentioned. Examples of the polymer containing the repeating unit include homopolymers and copolymers of N-vinyllactam monomers, homopolymers and copolymers of N-vinyl chain amides, and the like. The above-mentioned N-vinyllactam-type monomer copolymer may be, for example, a copolymer in which the copolymerization ratio of N-vinyllactam-type monomer exceeds 50% by weight. The copolymer of N-vinyl chain amide may be, for example, a copolymer having a copolymerization ratio of N-vinyl chain amide of more than 50% by weight. [0052] Specific examples of the N-vinyllactam type monomer include N-vinylpyrrolidone (VP), N-vinylpiperidone, N-vinylmorpholine, N- Vinylcaprolactam (VC), N-vinyl-1,3-oxazin-2-one, N-vinyl-3,5-morpholinedione, etc. Specific examples of polymers containing monomer units of N-vinyllactam type include polyvinylpyrrolidone, polyvinylcaprolactam, random copolymers of VP and VC, VP And random copolymers of one or both of VC and other vinyl monomers, block copolymers or graft copolymers containing polymer chains including one or both of VP and VC. The other vinyl monomers may be, for example, acrylic monomers, vinyl ester monomers, and the like. Here, the acrylic single system refers to a monomer having a (meth)acryloyl group. As specific examples of the N-vinyl chain amide, there may be mentioned N-vinyl acetamide, N-vinyl propionate amide, N-vinyl butyrate amide, and the like.　　 [0053] Examples of polymers containing N-(meth)acryloyl monomer units are homopolymers and copolymers including N-(meth)acryloyl monomers. Examples of the N-(meth)acryl amide type monomer include a chain amide having an N-(meth) acryl amide group and a cyclic amide having an N-(meth) acryl amide group. The copolymer of the above-mentioned N-(meth)acryl-based monomer may be, for example, a copolymer in which the copolymerization ratio of N-(meth)acryl-based monomer exceeds 50% by weight. [0054] As an example of a chain amide having an N-(meth)acryloyl group, for example, (meth)acrylamide; N-methyl (meth)acrylamide, N-ethyl N-alkyl groups such as (meth)acrylamide, N-propyl(meth)acrylamide, N-isopropyl(meth)acrylamide, Nn-butyl(meth)acrylamide (Meth) acrylamide; N, N-dimethyl (meth) acrylamide, N, N-diethyl (meth) acrylamide, N, N-dipropyl (meth) acryl N,N-dialkyl (methyl) such as amide, N,N-diisopropyl(meth)acrylamide, N,N-di(n-butyl)(meth)acrylamide, etc. Acrylic amide and so on. As an example of a polymer containing monomeric units of a chain amide having an N-(meth)acryloyl group, a homopolymer of N-isopropylacrylamide and N-isopropyl group may be mentioned. Copolymer of acrylic amide. The copolymer of N-isopropylacrylamide may be, for example, a copolymer in which the copolymerization ratio of N-isopropylacrylamide exceeds 50% by weight. [0055] Examples of cyclic amides having N-(meth)acryloyl acetyl groups include N-(meth)acryloyl morpholine, N-(meth)acryloyl pyridine and the like . As an example of a polymer containing a cyclic amide having an N-(meth)acryloyl group as a monomer unit, can a homopolymer of N-acryloyl morpholine and an N-acryloyl group be mentioned? Copolymer of phenoline. The above-mentioned copolymer of N-acryloyl morpholine may be, for example, a copolymer having a copolymerization ratio of N-acryloyl morpholine exceeding 50% by weight. [0056] The cellulose derivative is a polymer containing β-glucose units as a main repeating unit. Specific examples of cellulose derivatives include hydroxyethyl cellulose, hydroxypropyl cellulose, hydroxyethyl methyl cellulose, hydroxypropyl methyl cellulose, methyl cellulose, ethyl cellulose , Ethyl hydroxyethyl cellulose, carboxymethyl cellulose, etc. Among them, hydroxyethyl cellulose (HEC) is also preferred.　　 [0057] The starch derivative is a polymer containing α-glucose units as the main repeating unit. Specific examples of starch derivatives include α-starch, pullulan, carboxymethyl starch, and cyclodextrin. Amylopectin is also preferred.　　 [0058] Examples of the polymer containing vinyl alcohol units as the polymer B include those containing only VA units, and those containing VA units and non-VA units that do not satisfy the condition (2). As the polymer B, a polymer containing vinyl alcohol units is used, and typically a polymer that contains VA units as the main repeating unit and does not satisfy the condition (2). In this polymer, the ratio of the number of moles of VA units in the number of moles of all repeating units is, for example, more than 50%, may be 65% or more, 70% or more, or 75% or more. In the use of a polymer containing a vinyl alcohol unit as polymer B, the type of non-VA unit is not particularly limited, and may be selected from propyl vinyl ether units, butyl vinyl ether units, 2-ethyl One or more than two types of hexyl vinyl ether units, vinyl acetate units, vinyl propionate units, and hexanoic acid vinyl ester units.　　 [0059] The polymer containing vinyl alcohol units used as the polymer B may be a polymer containing substantially only VA units. Here "substantially" means that typically 95% or more of the repeating units are vinyl alcohol units. Moreover, the polymer containing vinyl alcohol units that substantially only include VA units usually has an adsorption parameter of less than 5, for example, 3 or less, and typically is almost zero, so the condition (2) is not satisfied.　　 [0060] [Mw and Mn of polymer B] 　　 In the aspect where the water-soluble polymer contains polymer B, the Mw of polymer B is not particularly limited. From the viewpoint of filterability, cleanability, etc., for example, Mw is 200×10⁴ Below or 150×10⁴ The following. Also, the Mw of polymer B is typically 1×10⁴ the above.　　 [0061] The preferred range of Mw may vary according to the type of polymer B.　　 For example, the cellulose derivatives and starch derivatives of polymer B are typically less than 200×10⁴ , Preferably 170×10⁴ The following is more preferably 150×10⁴ The following can be 100×10⁴ The following may also be, for example, 50×10⁴ the following. The Mw of this polymer B is typically 1×10⁴ Above, preferably 2×10⁴ Above, can be 3×10⁴ Above, can be 5×10⁴ Above, it can be 7×10⁴ Above, it can be 15×10⁴ Above, it can also be 30×10⁴ the above.　　 Furthermore, for example, the Mw of a polymer containing an oxyalkylene unit, a polymer containing a nitrogen atom, and a polymer containing a vinyl alcohol unit are each 100×10⁴ The following is better, preferably 60×10⁴ The following can be 30×10⁴ The following can be 20×10⁴ The following may also be, for example, 10×10⁴ the following. The Mw of this polymer B is typically 1×10⁴ Above, it can be 1.2×10⁴ Above, it can be 1.5×10⁴ The above can also be, for example, 3×10⁴ the above.　　 [0062] The Mw/Mn of the polymer B is not particularly limited. From the viewpoint of preventing the generation of aggregates, etc., generally, Mw/Mn is preferably 10.0 or less, preferably 7.0 or less, and more preferably 5.0 or less.　　 [0063] In addition, in this specification, the Mw and Mn of the water-soluble polymer or surfactant can be based on the value of gel permeation chromatography (GPC) of the water system (water system, converted to polyethylene oxide).　　[0064] (Content of water-soluble polymer, etc.) 　　 is not particularly limited, but the content of the water-soluble polymer in the polishing composition is 100 parts by weight of abrasive grains, and can be, for example, 0.01 parts by weight or more. The content of the water-soluble polymer relative to 100 parts by weight of the abrasive particles is usually appropriate from 0.1 parts by weight or more from the viewpoint of improving the surface smoothness after grinding, and may be 0.5 parts by weight or more, and may be 1 part by weight or more. It may be, for example, 1.5 parts by weight or more. In addition, the content of the water-soluble polymer relative to 100 parts by weight of the abrasive particles may be, for example, 50 parts by weight or less, 30 parts by weight or less, or 20 parts by weight or less. From the viewpoint of polishing speed, detergency, etc., in one aspect, the content of the water-soluble polymer relative to 100 parts by weight of the abrasive particles may be, for example, 10 parts by weight or less, 7 parts by weight or less, or 5 parts by weight or less, 2.5 parts by weight or less, or 2.0 parts by weight or less. [0065] In addition, the content of the polymer A can be made 0.01 parts by weight or more with respect to 100 parts by weight of abrasive particles contained in the polishing composition. The effect obtained by using the polymer A is preferably from 0.05 or more parts by weight to the content of the polymer A relative to 100 parts by weight of the abrasive particles from the viewpoint of more effectively exerting a defect reduction effect such as reducing the number of LPD-N. It may be 0.1 parts by weight or more, 0.5 parts by weight or more, 1 part by weight or more, or 1.5 parts by weight or more. In addition, the content of the polymer A relative to 100 parts by weight of the abrasive particles may be, for example, 40 parts by weight or less, 20 parts by weight or less, or 15 parts by weight or less. From the viewpoint of polishing speed, detergency, etc., in one aspect, the content of the polymer A relative to 100 parts by weight of the abrasive grains may be 10 parts by weight or less, 7 parts by weight or less, or 5 parts by weight the following. The polishing composition disclosed here can be ideally implemented even if the content of the polymer A relative to 100 parts by weight of the abrasive particles is 2.5 parts by weight or less, for example, 2.0 parts by weight or less. Reduce the effect of surface defects. [0066] In the polishing composition containing polymer A and polymer B as water-soluble polymers, the proportion of polymer A in the entire water-soluble polymer, that is, the sum of polymer A and polymer B The proportion of polymer A in the weight, based on weight, can be made, for example, 5% or more, or 10% or more. From the viewpoint of achieving higher effects, it is usually appropriate to make the above ratio 30% or more, preferably 50% or more, 70% or more, 85% or more, 95% or more, for example 99% or more. [0067] When a cellulose derivative such as HEC is used as the polymer B, the usage amount thereof is preferably 40% by weight or less of the entire water-soluble polymer, preferably 25% by weight or less, and 10 It is more preferable that it is 5% by weight or less, and it is better to make 5% by weight or less. By limiting the amount of cellulose derivatives used, it is possible to suppress the mixing or aggregation of foreign substances caused by cellulose derivatives derived from natural products. The polishing composition disclosed herein can be ideally implemented without substantially containing cellulose derivatives.　　 [0068] The polishing composition disclosed here can be¹⁷ Ideally, the content of each polymer A is 10 mg or more. In addition, the polishing composition disclosed here can be¹⁷ Ideally, the content of each polymer A is 1000 mg or less. Here, the calculation of the number of abrasive particles can be performed based on the weight of the abrasive particles contained in the polishing composition, the BET diameter of the abrasive particles, and the specific gravity of the abrasive particles. Abrasive particles every 10¹⁷ The content of each polymer A can be calculated from the number of abrasive particles and the weight of the polymer A contained in the polishing composition. By including the polymer A exhibiting the degree of adsorption that satisfies the specified adsorption parameters for the abrasive particles so that each number of the abrasive particles becomes greater than the specified weight, the possibility of the abrasive particles on the surface of the object to be polished can be effectively reduced The local pressure is given, and the effect of reducing defects caused by the polymer A can be efficiently achieved. In addition, by selecting the composition of the polishing composition so that the content of the polymer A per number of abrasive particles becomes a predetermined value or less, the excessive adsorption of the abrasive particles to the polymer A can be suppressed, and the efficiency of the The polishing effect of the object to be polished. In one aspect of the polishing composition disclosed here,¹⁷ The content of each polymer A may be, for example, 600 mg or less, 400 mg or less, 300 mg or less, or 200 mg or less. From the viewpoint of taking a higher grinding effect, in one aspect,¹⁷ The content of each polymer A may be 175 mg or less, for example, 150 mg or less, 125 mg or less, or 100 mg or less. In addition, from the viewpoint of appropriately exerting the effect of reducing defects caused by the polymer A, in one aspect, the abrasive particles¹⁷ The content of each polymer A can be made more than 10 mg, for example, 15 mg or more, 20 mg or more, or 30 mg or more.　　 [0069] The polishing composition disclosed here can be expressed by the following formula: abrasive particle buffer index = (W_A ×Q)/S; the calculated abrasive particle buffer index becomes 1 mg/m² ～40mg/m² Ideally implemented. Here, S in the above formula is the total surface area of the abrasive grains included in the polishing composition [m² ]. W in the above formula_A The total amount [mg] of the polymer A contained in the polishing composition. Q in the above formula is the above adsorption parameter. A polishing composition with a high abrasive particle buffer index tends to increase the adsorption amount of the polymer A per surface area of the abrasive particles. Therefore, by selecting the composition of the polishing composition so that the above-mentioned abrasive particle buffer index becomes a predetermined value or more, the effect of reducing defects caused by the polymer A can be efficiently achieved. In addition, by selecting the composition of the polishing composition so that the above-mentioned abrasive particle buffer index is called a predetermined value or less, it is possible to suppress an excessive decrease in polishing efficiency and to reduce defects. Not specifically limited, but in one aspect, the above-mentioned abrasive particle buffer index system may be, for example, 3 mg/m² Above, can be 5mg/m² The above can also be, for example, 10mg/m² the above. Furthermore, in one aspect, the above-mentioned abrasive particle buffer index may be 30 mg/m² The following, for example, can be 25mg/m² The following can be 20mg/m² The following can also be 15mg/m² the following.　　 [0070] <Water> As water contained in the polishing composition disclosed herein, ion-exchanged water (deionized water), pure water, ultrapure water, distilled water, etc. can be preferably used. The water used must avoid the effects of other components contained in the polishing composition as much as possible. Therefore, for example, the total content of transition metal ions is preferably 100 ppb or less. For example, the purity of water can be improved by operations such as the removal of impurity ions made of ion exchange resins, the removal of foreign bodies made of filters, and distillation.　　[0071] <Basic compound> 　　The polishing composition disclosed here contains a basic compound. In this specification, a basic compound refers to a compound dissolved in water and having a function of increasing the pH of an aqueous solution. As the basic compound, for example, nitrogen-containing organic or inorganic basic compounds, hydroxides of alkali metals, hydroxides of alkaline earth metals, various carbonates or bicarbonates can be used. Examples of nitrogen-containing basic compounds include fourth-order ammonium compounds, fourth-order phosphonium compounds, ammonia, and amines. As the above amine, a water-soluble amine is preferred. These basic compound systems may be used alone or in combination of two or more. [0072] Specific examples of the hydroxides of alkali metals include potassium hydroxide and sodium hydroxide. Specific examples of the carbonate or bicarbonate include ammonium bicarbonate, ammonium carbonate, potassium bicarbonate, potassium carbonate, sodium bicarbonate, and sodium carbonate. Specific examples of amines include methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, monoethanolamine, and N-(β- (Aminoethyl) ethanolamine, hexamethylenediamine, diethylenetriamine, triethylenetetramine, anhydrous piperazine, piperazine hexahydrate, 1-(2-aminoethyl)piperazine, N -Methylpiperazine, guanidine, imidazole, triazole and other azoles, etc. Examples of the fourth-order phosphonium compound include fourth-order phosphonium hydroxide such as tetramethylphosphonium hydroxide and tetraethylphosphonium hydroxide. [0073] As the fourth-level ammonium compound, a fourth-level ammonium salt such as a tetraalkylammonium salt, a hydroxyalkyltrialkylammonium salt, or the like can be preferably used. The anion component in the fourth-level ammonium salt may be, for example, OH^- , F^- , Cl^- , Br^- , I^- , ClO₄ ^- , BH₄ ^- Wait. As the fourth-level ammonium salt, a strong base is preferred. As a preferable example, the anion is OH^- The fourth-level ammonium salt is the fourth-level ammonium hydroxide. Specific examples of the fourth-grade ammonium hydroxide include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, tetrapentylammonium hydroxide and Tetraalkylammonium hydroxide such as tetrahexylammonium hydroxide; hydroxyalkyltrialkylammonium hydroxide such as 2-hydroxyethyltrimethylammonium hydroxide (also known as choline).　　 [0074] Among these basic compounds, for example, at least one basic compound selected from an alkali metal hydroxide, a fourth-grade ammonium hydroxide, and ammonia can be preferably used. Among them, tetraalkylammonium hydroxide such as tetramethylammonium hydroxide and ammonia are preferred, and ammonia is particularly preferred.　　[0075] <Water-soluble organic compound> 　　The polishing composition disclosed here may contain a weight average molecular weight (Mw) of less than 1×10⁴ The water-soluble organic compound is used as an arbitrary component. By using this water-soluble organic compound, the number of LPD-N can be further reduced. One type of water-soluble organic compound may be used alone, or two or more types may be used in combination.　　 [0076] (Surfactant) 　　 Examples of the polishing composition disclosed herein that can use water-soluble organic compounds as optional components include surfactants described below. In addition to reducing the number of LPD-N, surfactants can also help reduce the degree of haze.　　 [0077] As the surfactant, any of anionic, cationic, nonionic, and amphoteric can be used. Usually anionic or nonionic surfactants can be ideally used. From the viewpoint of low foamability or ease of pH adjustment, a nonionic surfactant is preferred. Examples include oxyalkylene polymers such as polyethylene glycol, polypropylene glycol, and polybutylene glycol; polyoxyethylene alkyl ethers, polyoxyethylene alkyl phenyl ethers, polyoxyethylene alkyl amines, polyoxyethylene Polyoxyalkylene derivatives such as oxyethylene fatty acid esters, polyoxyethylene glyceryl ether fatty acid esters, polyoxyethylene rowan fatty acid esters, etc., for example, polyoxyalkylene adducts; plural oxygen species Alkyl-copolymers, such as diblock copolymers, triblock copolymers, random copolymers, alternating copolymers; and other nonionic surfactants. The surfactant system may be used alone or in combination of two or more. [0078] Specific examples of nonionic surfactants include block copolymers of ethylene oxide (EO) and propylene oxide (PO), random copolymers of EO and PO, polyoxyethylene Glycol, polyoxyethylene propyl ether, polyoxyethylene butyl ether, polyoxyethylene pentyl ether, polyoxyethylene hexyl ether, polyoxyethylene octyl ether, polyoxyethylene-2-ethylhexyl ether, polyoxyethylene Ethylene nonyl ether, polyoxyethylene decyl ether, polyoxyethylene isodecyl ether, polyoxyethylene tridecyl ether, polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene stearyl acetyl group Ether, polyoxyethylene isostearyl acetyl ether, polyoxyethylene oleyl ether, polyoxyethylene phenyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene nonyl phenyl ether, polyoxyethylene twelve Phenyl ether, polyoxyethylene styrenated phenyl ether, polyoxyethylene lauryl amine, polyoxyethylene stearamide, polyoxyethylene oleyl amine, polyoxyethylene monolaurate, polyoxyethylene Monostearate, polyoxyethylene distearate, polyoxyethylene monooleate, polyoxyethylene dioleate, polyoxyethylene rowan monolaurate, polyoxyethylene rowan monopalmitate , Polyoxyethylene rowan monostearate, Polyoxyethylene rowan monooleate, Polyoxyethylene rowan trioleate, Polyoxyethylene sorbitol tetraoleate, Polyoxyethylene castor oil, Polyoxyethylene Hardened castor oil, etc. Examples of the above block copolymers of EO and PO include diblock copolymers, PEO (polyethylene oxide)-PPO (polypropylene oxide)-PEO triblocks, PPO-PEO-PPO Type three-block copolymer, etc. Examples of the preferred surfactants include block copolymers of EO and PO, random copolymers of EO and PO, and polyoxyethylene alkyl ethers. As one suitable example of a block copolymer of EO and PO, a triblock copolymer of PEO-PPO-PEO type is particularly preferred. In addition, as one suitable example of the polyoxyethylene alkyl ether, polyoxyethylene decyl ether may be mentioned.　　 [0079] Anionic surfactant refers to a compound that has a functional group and a hydrophobic group that dissociate in water to become an anion and has an interface activity. Anionic surfactant systems can be classified into, for example, sulfuric acid systems, sulfonic acid systems, phosphoric acid systems, phosphonic acid systems, and carboxylic acid systems. Specific examples of anionic surfactants include alkyl sulfates, polyoxyethylene alkyl sulfates, polyoxyethylene alkyl sulfates, alkyl sulfates, alkyl ether sulfates, higher alcohol sulfates, alkyl phosphates, and alkyl Benzene sulfonic acid, α-olefin sulfonic acid, alkyl sulfonic acid, styrene sulfonic acid, alkyl naphthalene sulfonic acid, alkyl diphenyl ether disulfonic acid, polyoxyethylene alkyl ether acetic acid, polyoxyethylene alkyl Ether phosphoric acid, polyoxyethylene alkyl phosphate, polyoxyethylene sulfosuccinic acid, alkyl sulfosuccinic acid, salts of any of the above compounds, etc. As a specific example of the alkylsulfonic acid, dodecylsulfonic acid may be mentioned. Other examples of anionic surfactants include taurine-based surfactants, sarcosinate-based surfactants, isethionate-based surfactants, and N-acid-based acidic agents. Amino acid surfactants, higher fatty acid salts, acylated peptides, etc.　　 [0080] In some aspects, it may be desirable to use an anionic surfactant containing a polyoxyalkylene structure. The above-mentioned polyoxyalkylene structure refers to a repeating structure in which 2 or more oxyalkylene units are continuous, preferably 3 or more continuous. The oxyalkylene unit may be a repeating unit derived from the corresponding alkylene oxide. Therefore, the repeat number of oxyalkylene units can also be understood as the addition mole number of alkylene oxide. [0081] The oxyalkylene unit is preferably an oxyalkylene group having 2 to 18 carbon atoms. Here, the alkylene group may be substituted with an aryl group. Such an oxyalkylene system can be derived from, for example, ethylene oxide, propylene oxide, 1,2-butylene oxide, 2,3-butylene oxide, styrene oxide, and the like. From the viewpoint of ease of acquisition, or the fact that the surfactant in the polishing composition becomes easy to disperse and it is easier to reduce the haze of the polished surface, the oxyalkylene unit is an oxyalkylene group having 2 to 10 carbon atoms Preferably, an oxyalkylene group having 2 to 4 carbon atoms is more preferred. Among the preferred oxyalkylene units, there are oxyethyl and oxypropyl. Oxyethene is particularly preferred.　　 [0082] The anionic surfactant containing a polyoxyalkylene structure is selected from the group consisting of sulfate (R-O-SO₃ ^- H⁺ ) And its salts (R-O-SO₃ ^- M⁺ ), sulfonic acid (R-SO₃ ^- H⁺ ) And its salts (R-SO₃ ^- M⁺ ), carboxylic acid (R-COO^- H⁺ ) And its salts (R-COO^- M⁺ ), and phosphate esters (R-O-PO(O^- H⁺ )₂ ) And its salts (R-O-PO(O^- H⁺ )(O^- M⁺ ) Or R-O-PO (O^- M⁺ )₂ ) The group is better, but not limited to these. In addition, in the above, "R" represents the organic group containing the polyoxyalkylene structure. Also, in the above, "M⁺ "Indicates various cations such as metal cations or ammonium cations. From the viewpoint of easy reduction of haze, the anionic surfactant is preferably selected from the group consisting of sulfates and their salts, carboxylic acids and their salts, and phosphates and their salts, and preferably selected from the group consisting of sulfates and their salts Groups of salts, carboxylic acids and their salts are preferred. Here, from the viewpoint that haze can be more effectively reduced, the carboxylic acid and its salt are selected from acetic acid (R’-CH) having an organic group containing a polyoxyalkylene structure₂ COO^- H⁺ ) And its salts (R’-CH₂ COO^- M⁺ ) The group is better. Here, "R'" means an organic group containing a polyoxyalkylene structure. Therefore, from the viewpoint of further improving the haze reduction effect, the anionic surfactant is preferably selected from the group consisting of sulfates and their salts, and the above-mentioned acetic acid and its salts.　　[0083] According to the above "M⁺ In the case of classification, examples of the above-mentioned salts include alkali metal salts such as sodium and potassium, salts of group 2 elements such as calcium and magnesium, ammonium salts, and alkanolamine salts such as triethanolamine.　　 [0084] Furthermore, one molecule of the anionic surfactant may also contain two or more anionic moieties selected from the above (ie, "-O-SO₃ ^- '' section, ``SO<sub>3</sub> <sup>-</sup> '' section, ``COO^- '' part, ``-O-PO(OH)O<sup>-</sup> '' part and ``-O-PO(O^- )₂ "). [0085] In an anionic surfactant containing a polyoxyalkylene structure, the average addition mole number of the oxyalkylene units constituting the polyoxyalkylene structure is preferably more than 3 and 25 or less. When an anionic surfactant having an average addition mole number of oxyalkylene units exceeding 3 is used, since the anionic surfactant protects the surface of the object to be polished, such as a silicon substrate, it becomes easy to exert high haze Reduce the effect. In addition, when the average addition mole number of the oxyalkylene units contained in the anionic surfactant exceeds 25, the surface protection of the object to be polished, such as a silicon substrate, by the anionic surfactant becomes excessive, There is a possibility that the grinding speed will decrease. From the viewpoint of suppressing the reduction of the polishing rate and reducing the haze, the average addition mole number of the oxyalkylene unit is preferably 4 or more, and preferably 4.5 or more. In addition, from the same viewpoint, the average addition mole number of oxyalkylene units is preferably 20 or less, preferably 18 or less. Based on the above, from the viewpoint of coexistence of reduction in haze and improvement in polishing rate, the average addition mole number of oxyalkylene units is preferably 4 or more and 20 or less, and preferably 4.5 or more and 18 or less. In some aspects, the average addition mole number of oxyalkylene units may be, for example, 6 or more, 10 or more, or 14 or more. In addition, the "average addition mole number" refers to the average number of moles of alkylene oxide added to surfactant 1 mole (ie, the number of moles of oxyalkylene units). When the surfactant contains more than two different oxyalkylene units, the average of these should be used. In addition, the average addition mole number of the alkylene oxide can be determined by¹ H-NMR, gas chromatography (GC), GPC, gel permeation chromatography (GFC), titration, etc. are suitable for measurement.　　[0086] Depending on the situation, there may be more than two different oxyalkylene units in the anionic surfactant. From the viewpoint of the ease of production of the polyoxyalkylene chain or the ease of control of the structure, it is preferable that the oxyalkylene unit repeats the same. [0087] The sulfate ester and its salt used as an anionic surfactant containing a polyoxyalkylene structure are not particularly limited, and examples thereof include polyoxyethylene lauryl ether sulfuric acid and polyoxyethylene myristyl ether. Sulfuric acid, polyoxyethylene palmityl ether sulfuric acid; polyoxyethylene lauryl ether sodium sulfate, polyoxyethylene lauryl ether ammonium sulfate, polyoxyethylene lauryl ether triethanolamine sulfate, polyoxyethylene myristyl ether sodium sulfate, polyoxyethylene Ethylene myristyl ether ammonium sulfate, polyoxyethylene myristyl ether triethanolamine sulfate, polyoxyethylene palmyl ether sodium sulfate, polyoxyethylene palmyl ether sulfate, polyoxyethylene palmyl ether sulfate triethanolamine and the like. Among these, polyoxyethylene lauryl ether sulfate and polyoxyethylene lauryl ether ammonium sulfate are also preferred. [0088] The sulfonic acid and its salt used as an anionic surfactant containing a polyoxyalkylene structure are not particularly limited, and examples thereof include polyoxyethylene octyl sulfonic acid and polyoxyethylene lauryl sulfonic acid. , Polyoxyethylene palmyl sulfonic acid, polyoxyethylene octylbenzene sulfonic acid, polyoxyethylene lauryl benzene sulfonic acid; sodium polyoxyethylene octyl sulfonate, sodium polyoxyethylene lauryl sulfonate, polyoxyethylene palmyl Sodium sulfonate, etc. Among these, polyoxyethylene octyl sulfonic acid and sodium polyoxyethylene octyl sulfonate are also preferred. [0089] The carboxylic acid and its salt used as an anionic surfactant containing a polyoxyalkylene structure are not particularly limited, and examples thereof include polyoxyethylene lauryl ether acetic acid and polyoxyethylene tridecyl ether Acetic acid, polyoxyethylene octyl ether acetic acid; polyoxyethylene lauryl ether acetate, polyoxyethylene lauryl ether ammonium acetate, polyoxyethylene tridecyl ether acetate, polyoxyethylene tridecyl ether ammonium acetate, polyoxyethylene Vinyl octyl ether acetate, polyoxyethylene octyl ether ammonium acetate and the like include polyoxyalkylene-structured acetic acid and its salts. Among these, sodium polyoxyethylene lauryl ether acetate and polyoxyethylene lauryl ether ammonium acetate are also preferred. [0090] The phosphate ester and its salt used as the anionic surfactant containing a polyoxyalkylene structure are not particularly limited, and examples thereof include polyoxyethylene lauryl ether phosphoric acid and polyoxyethylene alkyl (12 -15) Ether phosphoric acid; sodium polyoxyethylene lauryl ether phosphate, sodium polyoxyethylene oleyl ether phosphate, sodium polyoxyethylene palmyl ether phosphate, potassium polyoxyethylene alkyl (12-15) ether phosphate, etc. Among these, polyoxyethylene alkyl (12-15) ether phosphoric acid and sodium polyoxyethylene lauryl ether phosphate are also preferred. [0091] In addition, as an example of an anionic surfactant containing two or more of the above anionic moieties in one molecule, polyoxyethylene lauryl sulfosuccinate disodium salt, sulfosuccinic acid polyoxyethylene lauryl Acetylethanolamide disodium salt, etc. [0092] In this anionic surfactant, the structure of the terminal hydrophobic group at the ω position is not particularly limited, for example, a substituted or unsubstituted C2 or more C30 or less alkyl group, a substituted or unsubstituted C3 or more C20 The following cycloalkyl groups, substituted or unsubstituted C1 or more C30 or less alkyl ester groups, substituted or unsubstituted C6 or more C20 or less aryl groups, C1 or more C30 or less monoalkyl or dialkylamides with alkyl groups It is substituted by a mono- or dialkylamine group having an alkyl group, C1 or more and C30 or less, and may also have a Huadan structure. Here, "CX or more and CY or less" means that the number of carbon atoms is X or more and Y or less. Examples of the alkyl group include ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, and iso Amyl, neopentyl, 1,2-dimethylpropyl, n-hexyl, n-heptyl, n-octyl, 2-ethylhexyl, n-decyl, n-dodecyl and the like.　　 [0094] Examples of the cycloalkyl group include cyclopentyl and cyclohexyl. Examples of the alkyl ester group include methyl ester group, ethyl ester group, n-propyl ester group, i-propyl ester group, n-butyl ester group, and 2-methyl group. Propyl ester group.　　 [0096] Examples of the aryl group include phenyl, o-, m-, or p-tolyl. In this specification, a "substituted or unsubstituted" group refers to a halogen atom in which the hydrogen atom in the group is replaced by a fluorine atom, a chlorine atom, a bromine atom, etc.; a cyano group; a nitro group; a hydroxyl group; C1 or more and C10 or less Straight chain or branched alkyl group; C1 or more C10 or less linear or branched alkoxy group; C6 or more C30 or less aryl group; C2 or more C30 or less heteroaryl group; C5 or more C20 or less Cycloalkyl; substituted by other substituents, or unsubstituted.　　 [0098] Such anionic surfactants may be used alone or in combination of two or more. [0099] In some aspects, as an anionic surfactant containing a polyoxyalkylene structure, the polyoxyalkylene structure described above can be preferably used as a polyoxyethylene structure, and the ring in the polyoxyethylene structure The average addition mole number of oxyethane is more than 3 and less than 25. From the viewpoint of suppressing the reduction of the polishing rate and reducing the haze, the average addition mole number of ethylene oxide is preferably 4 or more, and preferably 4.5 or more. From the same viewpoint, the average addition mole number of ethylene oxide is preferably 20 or less, and preferably 18 or less. Based on the above, the average addition mole number of ethylene oxide in the anionic surfactant is preferably 4 or more and 20 or less, and preferably 4.5 or more and 18 or less.　　[0100] The weight average molecular weight (Mw) of the surfactant is typically less than 1×10⁴ From the viewpoint of filterability, cleanability, etc., it is preferably 9500 or less, and may be less than 9000, for example. In addition, the Mw of the surfactant is preferably 200 or more from the viewpoint of interface activity ability, etc., from the viewpoint of the effect of reducing the degree of haze, etc., preferably 250 or more, and for example, 300 or more. The preferable range of the Mw of the surfactant may be different according to the type of the surfactant. For example, when polyoxyethylene alkyl ether is used as a surfactant, its Mw is preferably 2000 or less, and may be 1000 or less, or may be 500 or less, for example. In addition, for example, when a PEO-PPO-PEO-type triblock copolymer is used as a surfactant, its Mw is, for example, 1,000 or more, 3,000 or more, and 5,000 or more. As the Mw of the surfactant, a value obtained by GPC (aqueous system, polyethylene glycol conversion) can be used. [0101] When the polishing composition disclosed herein contains a surfactant, its content is not particularly limited as long as it does not significantly hinder the effect of the present invention. Generally, from the viewpoint of detergency, the content of the surfactant relative to 100 parts by weight of the abrasive particles is preferably 20 parts by weight or less, preferably 15 parts by weight or less, preferably 10 parts by weight or less, for example 6 Below parts by weight. From the viewpoint of more effectively exerting the use effect of the surfactant, the content of the surfactant with respect to 100 parts by weight of the abrasive particles is preferably 0.001 parts by weight or more, preferably 0.005 parts by weight or more, and more preferably 0.01 parts by weight or more Preferably, it may be, for example, 0.05 parts by weight or more. In some aspects, the content of the surfactant may be, for example, 0.1 parts by weight or more. In addition, when the polishing composition disclosed herein includes a surfactant, the weight ratio (w1/w2) of the content w1 of the water-soluble polymer to the content w2 of the surfactant is not particularly limited, and can be made, for example, 0.01 to 100 The range is preferably 0.05 to 50, or 0.1 to 30. Also, from the viewpoint of simplification of the composition, etc., the polishing composition disclosed herein can be ideally implemented without substantially containing a surfactant. [Other components] 　　Others, as long as they do not significantly hinder the effect of the present invention, the polishing composition disclosed herein may further contain a chelating agent, organic acid, organic acid salt, inorganic acid, inorganic acid salt if necessary , Preservatives, mildew inhibitors and other well-known additives that can be used in grinding slurries. The above additives may be, for example, well-known additives that can be used in the slurry used in the polishing step of the silicon wafer.　　 [0103] It is preferable that the polishing composition disclosed here does not substantially contain an oxidizing agent. If the polishing composition contains an oxidizing agent, the polishing composition is supplied to an object to be polished, such as a silicon wafer, etc., and the surface of the object to be polished is oxidized to form an oxide film, resulting in a decrease in polishing efficiency Possibility. As specific examples of the oxidizing agent referred to herein, hydrogen peroxide (H₂ O₂ ), sodium persulfate, ammonium persulfate, sodium dichloroisocyanurate, etc. Furthermore, the fact that the polishing composition does not substantially contain an oxidizing agent means that it at least intentionally does not contain an oxidizing agent.　　[0104] <pH> 　　The pH of the polishing composition disclosed herein is typically 8.0 or more, preferably 8.5 or more, preferably 9.0 or more, more preferably 9.3 or more, such as 9.5 or more. When the pH of the polishing composition becomes higher, the polishing efficiency tends to increase. On the other hand, from the viewpoint of preventing the dissolution of abrasive particles, such as silica particles, to suppress the reduction in mechanical polishing action, the pH of the polishing composition is suitably 12.0 or less, preferably 11.0 or less, and more preferably 10.8 or less. Preferably, 10.5 or less is better. [0105] In the technique disclosed herein, the pH of the liquid composition is a pH meter, and after a three-point calibration using a standard buffer, the glass electrode is placed in the composition to be measured, and the measurement is performed for more than 2 minutes And get the value after the stability. The above standard buffers are phthalate pH buffer pH: 4.01 (25°C), neutral phosphate pH buffer pH: 6.86 (25°C), carbonate pH buffer pH: 10.01 (25°C). As the pH meter, for example, a glass electrode type hydrogen ion concentration indicator manufactured by HORIBA, model F-23 or its equivalent can be used.　　[0106] <Application> 　　 The polishing composition in the technology disclosed herein can be applied to polishing objects to be polished having various materials and shapes. The material of the object to be polished can be, for example, metal or semi-metal such as silicon, aluminum, nickel, tungsten, copper, tantalum, titanium, stainless steel, etc., or alloys of these; quartz glass, aluminosilicate glass, glassy carbon, etc. Glassy substance; ceramic materials such as aluminum oxide, silicon dioxide, sapphire, silicon nitride, tantalum nitride, titanium carbide, etc.; compound semiconductor substrate materials such as silicon carbide, gallium nitride, gallium arsenide; polyimide Resin materials such as resin. It may also be an object to be polished composed of plural materials.　　 [0107] The polishing composition in the technique disclosed here is particularly ideal for polishing a surface made of silicon, such as a silicon wafer. A typical example of the silicon wafer here is a silicon single crystal wafer, for example, a silicon single crystal wafer obtained by cutting a silicon single crystal ingot.　　 [0108] The polishing composition disclosed herein can be ideally applied to a polishing step of an object to be polished, for example, a silicon wafer polishing step. The object to be polished may be applied to the object to be polished in a step further upstream than the polishing step, such as polishing or etching, before the polishing step made of the polishing composition disclosed herein Of general handling.　　 [0109] The polishing composition disclosed herein can be ideally used for polishing an object to be polished, such as a silicon wafer, prepared by a surface step having a surface roughness of 0.01 nm to 100 nm, for example, by an upstream step. The surface roughness Ra of the object to be polished can be measured using, for example, a laser scanning surface roughness meter "TMS-3000WRC" manufactured by Schmitt Measurement System Inc. It is very effective to use in the final polishing (finished grinding) or the polishing before it, especially for the final polishing. Here, the final polishing refers to the final polishing step in the manufacturing process of the object, that is, the step that no further polishing is performed after this step.　　[0110] <Polishing composition> 　　The polishing composition disclosed here is typically supplied to the object to be polished in the form of a polishing liquid containing the polishing composition and used for polishing the object to be polished. The polishing liquid may be prepared by diluting any polishing composition disclosed herein, for example. The dilution of the polishing composition is typically carried out with water. Alternatively, the polishing composition may be directly used as a polishing liquid. That is, the concept of the polishing composition in the technology disclosed here includes a polishing liquid (also referred to as working slurry) used for polishing the polishing object, which is supplied to the polishing object, is diluted and used As both sides of the concentrate of the polishing liquid. The above-mentioned concentrated liquid can also be understood as the raw liquid of the polishing liquid. As another example of the polishing liquid containing the polishing composition disclosed herein, a polishing liquid obtained by adjusting the pH of the composition may be mentioned. [0111] (Polishing liquid) The content of abrasive particles in the polishing liquid is not particularly limited, but is typically 0.01% by weight or more, preferably 0.05% by weight or more, preferably 0.10% by weight or more, and may be, for example, 0.15% by weight or more . As the content of abrasive particles increases, a higher grinding speed can be achieved. From the viewpoint of the dispersion stability of the particles in the polishing composition, the content is usually 10% by weight or less, preferably 7% by weight or less, preferably 5% by weight or less, and more preferably 2% by weight or less. It is, for example, 1% by weight or less, or 0.7% by weight or less.　　 [0112] The concentration of the water-soluble polymer in the polishing liquid is not particularly limited, and may be made 0.0001% by weight or more, for example. From the viewpoint of reducing haze, etc., the ideal concentration is 0.0005 wt% or more, preferably 0.001 wt% or more, for example, 0.003 wt% or more, or 0.005 wt% or more. In addition, from the viewpoint of polishing speed, etc., the concentration of the water-soluble polymer is usually preferably 0.2% by weight or less, more preferably 0.1% by weight, and may be made 0.05% by weight or less, or may be 0.01% by weight or less, for example. .　　[0113] When the polishing composition disclosed herein contains a basic compound, the concentration of the basic compound in the polishing liquid is not particularly limited. From the standpoint of increasing the polishing speed, etc., it is generally preferable to make the above concentration 0.001% by weight or more of the polishing liquid, preferably 0.003% by weight or more, or, for example, 0.005% by weight or more. In addition, from the viewpoint of reducing the haze, etc., the above concentration is appropriate to be 0.3% by weight of the polishing slurry, preferably 0.1% by weight or less, preferably 0.05% by weight or less. Full 0.03% by weight.　　 [0114] When the polishing composition disclosed herein contains a surfactant, its content is not particularly limited within a range that does not significantly hinder the effect of the present invention. Generally, from the standpoint of detergency and the like, the content of the surfactant relative to 100 parts by weight of the abrasive particles is suitably 10 parts by weight or less, preferably 5 parts by weight or less, and more preferably 1 part by weight or less. It may be made 0.5 parts by weight or less, or 0.3 parts by weight or less. In addition, from the viewpoint of more effectively exerting the use effect of the surfactant, the content of the surfactant with respect to 100 parts by weight of the abrasive particles is preferably 0.001 parts by weight or more, preferably 0.005 parts by weight or more, and can be made 0.01 parts by weight. It can be made 0.03 parts by weight or more, or 0.05 parts by weight or more. The concentration of the surfactant in the polishing liquid may be, for example, 0.000001% by weight or more, 0.000005% by weight or more, 0.00001% by weight or more, 0.00005% by weight or more, 0.0001% by weight or more, or may also be 0.0002% by weight or more. In addition, the concentration of the interface activity is usually suitably 0.2% by weight or less, and may be 0.1% by weight or less, 0.05% by weight or less, 0.01% by weight or less, 0.005% by weight or less, or 0.001% by weight or less.　　[0115] (Concentrated solution) 　　The polishing composition disclosed herein may be in a concentrated form before being supplied to the object to be polished. The above-mentioned concentrated form refers to the form of the concentrated liquid of the polishing liquid, and can also be understood as the raw liquid of the polishing liquid. From the viewpoints of convenience in production, distribution, storage, etc., and cost reduction, such a concentrated composition for polishing is advantageous. The concentration ratio is not particularly limited. For example, it can be converted to about 2 to 100 times in volume conversion, usually about 5 to 50 times, and for example, about 10 to 40 times.　　 [0116] Such a concentrated liquid can be prepared by diluting it at a desired timing to prepare a polishing liquid (working slurry), and supplying the polishing liquid to an object to be polished. The dilution is performed by, for example, adding water to the concentrated liquid and mixing.　　 [0117] The content of the abrasive particles in the concentrated liquid can be, for example, 50% by weight or less. From the viewpoint of the operability of the concentrated liquid, for example, the dispersion stability and filterability of the abrasive particles, the content of the abrasive particles in the concentrated liquid is usually preferably 45% by weight or less, preferably 40% by weight or less. In addition, from the viewpoint of convenience in production, distribution, storage, etc., or cost reduction, the content of the abrasive particles can be, for example, 0.5% by weight or more, preferably 1% by weight or more, preferably 3% by weight or more. For example, 4% by weight or more. In an ideal aspect, the content of the abrasive particles can be made more than 5% by weight, more than 10% by weight, for example, more than 15% by weight, or more than 20% by weight, or more than 30% by weight.　　[0118] (Preparation of polishing composition) 　　The polishing composition used in the technique disclosed herein may be a single dosage form, or may be a multiple dosage form including two dosage forms. It may be, for example, by mixing at least a portion A of the constituents of the polishing composition with abrasive grains and a portion B containing at least a portion of the remaining ingredients, and mixing and diluting them at an appropriate time as necessary Modified into the composition of polishing liquid. [0119] The method for preparing the polishing composition is not particularly limited. For example, a well-known mixing device such as a wing mixer, an ultrasonic disperser, and a homomixer is used, and it is preferable to mix the components constituting the polishing composition. The manner in which these components are mixed is not particularly limited. For example, all the components may be mixed at once, or may be mixed in an order set appropriately.　　 [0120] <Polishing> 　　 The polishing composition disclosed herein is used for polishing an object to be polished, for example, in the following manner. Hereinafter, a suitable aspect of a method of polishing an object to be polished, such as a silicon wafer, using the polishing composition disclosed herein will be described.　　 That is, a polishing liquid containing any of the polishing compositions disclosed herein is prepared. The preparation of the polishing liquid can include operations such as concentration adjustment of dilution or the like to the polishing composition, or pH adjustment, etc. to prepare the polishing liquid. Alternatively, the polishing composition may be directly used as a polishing liquid.　　 [0121] Next, the polishing liquid is supplied to the object to be polished, and the polishing is performed by a conventional method. For example, when the silicon wafer is completely polished, the silicon wafer that has undergone the finishing step is typically mounted on a general polishing device, and the polishing target surface of the silicon wafer is supplied with polishing liquid through the polishing pad of the polishing device . Typically, the above-mentioned polishing liquid is continuously supplied, and at the same time, the polishing pad is pressed against the polishing target surface of the silicon wafer, and the two are relatively moved, for example, rotated. After this polishing step, the polishing of the object to be polished ends.　　 [0122] The polishing pad used in the above polishing step is not particularly limited, and for example, foamed polyurethane type, non-woven type, suede type, etc. polishing pads can be used. Each polishing pad may or may not contain abrasive particles. Generally, it is desirable to use a polishing pad that does not contain abrasive particles.　　 [0123] The object to be polished using the polishing composition disclosed herein is typically a cleaned object. The cleaning system can be carried out using an appropriate cleaning solution. The cleaning solution used is not particularly limited. For example, in the field of semiconductors, general SC-1 cleaning solution, SC-2 cleaning solution, etc. can be used. The above SC-1 cleaning solution is ammonium hydroxide (NH₄ OH) and hydrogen peroxide (H₂ O₂ ) And water (H₂ O) Mixed liquid. The above SC-2 cleaning solution is HCl and H₂ O₂ With H₂ O mixture. The temperature of the cleaning liquid can be set to, for example, a room temperature above about 90°C. The above room temperature system is typically about 15°C to 25°C. From the viewpoint of improving the cleaning effect, a cleaning liquid of about 50°C to 85°C can be used ideally. [0124] <Composition for front-end polishing> The polishing composition disclosed herein can be suitably used for, for example, including: using the polishing composition for a finishing polishing step, and performing the previous-stage polishing before the finishing polishing step In the grinding process of the step. The aforementioned first-stage polishing step is typically performed by using a previous-stage polishing composition that is different from the composition of the above-mentioned finished polishing composition, and supplying the previous-stage polishing composition to the object to be polished. The above-mentioned finishing polishing step is performed by supplying a finishing polishing composition including the above-mentioned polishing composition to the object to be polished after being polished by the above-mentioned polishing composition. As the polishing composition used in the preceding polishing step, a composition for polishing at the previous stage including abrasive particles, a water-soluble polymer, and a basic compound can be preferably used.　　 [0125] In the previous polishing process including the previous polishing step and the finished polishing step, the previous polishing step was regarded as a step for finishing the shape or rough surface state of the object to be polished before the completed polishing step. Therefore, in general, the surface of the object to be polished is removed by using the previous polishing composition that has substantially stronger polishing force than the finished polishing composition, and the surface roughness is reduced efficiently. Therefore, in order to attach importance to the relationship between the polishing power, in the field of the first-stage polishing composition, it is generally not intentionally compounded with a water-soluble polymer to the composition.　　 [0126] According to the technique disclosed herein, by using the composition for the previous stage polishing including the water-soluble polymer in the first stage polishing step, the smoothness of the surface of the object to be polished can be improved at the start time of the finishing polishing. In this way, in the finishing polishing step, even if a finishing polishing composition with a weaker grinding force and a smaller load on the surface of the object to be polished is used, the unevenness existing at the beginning of the finishing polishing can be reduced to the desired To the extent that it becomes possible to suppress the generation of new defects on the surface of the object to be polished during the finishing polishing step. [0127] In one aspect, the front-stage polishing composition is set so that the weight ratio R1 of the water-soluble polymer/abrasive particle of the front-stage polishing composition becomes higher than the water-soluble polymer/ of the finished polishing composition/ The weight of the abrasive particles is preferably smaller than R2. In this way, the polishing efficiency of the previous polishing step is not excessively compromised, and the surface quality after completion of polishing can be effectively improved.　　 [0128] (Abrasive particles for front-end polishing) The abrasive particles included in the composition for the front-end polishing, that is, the abrasive particles for the front-end polishing can be suitably selected from, for example, the abrasive particles exemplified above. The abrasive system for the front stage polishing may be used alone or in combination of two or more. Abrasive grains for the first stage of grinding may be the same abrasive grains as the abrasive grains of the finished abrasive grains, that is, the finished abrasive composition, or may be at least any one of different materials, sizes, shapes, etc. grain. The above-mentioned size difference may be, for example, the difference in BET diameter.　　 [0129] As the abrasive for the first-stage polishing, inorganic particles are preferred, and particles composed of metal or semi-metal oxides are also preferred, and silicon dioxide particles are particularly preferred. The technique disclosed here can be ideally implemented in a state where the abrasive for the first-stage polishing is substantially composed of silicon dioxide particles.　　 In one aspect, as the abrasives for the first-stage polishing, the BET diameter of which is approximately equal to or larger than the BET diameter of the abrasives for finished polishing can be used ideally. For example, the BET diameter of the abrasive grains for the first-stage polishing may be about 0.9 times to 2.0 times the BET diameter of the finished abrasive grains, or about 1 to 1.5 times.　　 [0130] The concentration of the abrasive particles in the polishing composition in the first stage, that is, the weight ratio of the abrasive particles in the weight of the polishing slurry, is not particularly limited. In one aspect, the concentration of the abrasive particles of the polishing composition in the front stage can be made, for example, 0.5 to 20 times the abrasive concentration of the finished polishing composition, can be made 0.5 to 10 times, or can be made 0.5 to 8 Times.　　 [0131] (Water-soluble polymer for front-end polishing) The water-soluble polymer contained in the composition for front-end polishing, that is, the water-soluble polymer for front-end polishing can be appropriately selected from, for example, those exemplified above for the polymer A and the polymer B. The water-soluble polymer system for front stage polishing may be used alone or in combination of two or more. The above polymers containing oxyalkylene units, polymers containing nitrogen atoms, polymers containing vinyl alcohol units, cellulose derivatives, starch derivatives, etc., and the above adsorption parameters are 5 or more and less than 5 Either of these can be included in the options of the water-soluble polymer for the previous stage of polishing in the technique disclosed herein. It is not particularly limited, but in one aspect, a cellulose derivative such as HEC can be preferably used as a water-soluble polymer for front-end polishing.　　 [0132] The concentration of the water-soluble polymer for the first-stage polishing is not particularly limited. In one aspect, the concentration of the water-soluble polymer for the first-stage polishing can be, for example, 0.00001% by weight or more, preferably 0.0001% by weight or more, 0.0005% by weight or more, or 0.001% by weight or more. By increasing the concentration of the water-soluble polymer used in the previous stage of polishing, there is a tendency to obtain a higher-grade surface after finishing the polishing. On the other hand, from the viewpoint of polishing efficiency, the concentration of the water-soluble polymer for the first-stage polishing is usually preferably 0.1% by weight or less, preferably 0.05% by weight or less, 0.01% by weight or less, or 0.005% by weight, for example %the following. [0133] The content of the water-soluble polymer for the first-stage polishing is 0.0001 parts by weight or more per 100 parts by weight of the abrasive particles contained in the previous-stage polishing composition, usually 0.005 parts by weight is appropriate and 0.01 The part by weight or more may be 0.05 parts by weight or more, and may be, for example, 0.1 parts by weight or more. In addition, from the viewpoint of polishing efficiency, the content of the water-soluble polymer for the first-stage polishing is generally 100 parts by weight or less of the abrasive particles contained in the previous-stage polishing composition, usually 10 parts by weight or less, and preferably 7 parts by weight or less. It may be 5 parts by weight or less, or may be 3 parts by weight or less, for example. [0134] In one aspect, the weight ratio R1 of the water-soluble polymer/abrasive particles in the preceding polishing composition may be made to be greater than the weight ratio R2 of the water-soluble polymer/abrasive particles in the finished polishing composition small. In this aspect, the value of R1/R2 may be less than 1.0, and may be, for example, 0.95 or less, or 0.9 or less. The technique disclosed here can be suitably implemented even when R1/R2 is 0.7 or less, or 0.5 or less. In addition, from the viewpoint of making it easier to remarkably achieve the effect achieved by including the water-soluble polymer in the front-stage polishing composition, R1/R2 is usually suitably 0.001 or more, and may be, for example, 0.005 or more and 0.01 or more. , Can also be made more than 0.1.　　[0135] (Basic compound for front stage) 　　The composition for front stage polishing typically contains a basic compound. The basic compound contained in the composition for front-stage polishing, that is, the basic compound for front-stage polishing is not particularly limited, and for example, it can be appropriately selected from the basic compounds exemplified above. The basic compound system for front stage polishing may be used alone or in combination of two or more. The basic compound contained in the first-stage polishing composition and the basic compound contained in the finished polishing composition may be the same compound or different compounds. [0136] From the viewpoint of paying more attention to the polishing efficiency of the first-stage polishing step, in one aspect, as the basic compound for the first-stage, at least one kind of alkali selected from alkali metal hydroxides and fourth-stage ammonium hydroxide can be preferably used Sexual compounds. One suitable example of the fourth-order ammonium hydroxide includes tetraalkylammonium hydroxide. Among them, alkali metal hydroxides are also preferred. Examples of suitable examples of alkali metal hydroxides include potassium hydroxide. In addition, from the viewpoint of paying more attention to the surface grade after finishing grinding, in one aspect, ammonia can be preferably used as the basic compound for the front stage. [0137] The pH of the front-stage polishing composition is typically 8.0 or more, preferably 8.5 or more, preferably 9.0 or more, more preferably 9.5 or more, such as 10.0 or more. When the pH of the polishing composition becomes higher, the polishing efficiency tends to increase. On the other hand, from the viewpoint of preventing the dissolution of abrasive particles such as silicon dioxide particles and suppressing the decrease in mechanical polishing action, the pH of the polishing composition is suitably 12.0 or less, preferably 11.8 or less, and 11.5 or less. Preferably, 11.0 or less is more preferable. In one aspect, the pH of the preceding polishing composition can be set to be equal to or higher than the pH of the finished polishing composition. For example, the pH of the first-stage polishing composition can be set to a pH of 12.0 or lower and higher than the pH of the finished polishing composition. Thereby, the high grinding efficiency in the previous grinding step and the high surface grade in the finished grinding step can be coexisted appropriately. The pH of the first-stage polishing composition is higher than the pH of the finished polishing composition by, for example, 0.1 or more, or 0.2 or more.　　[0138] (Other components) 　　The composition for the front stage polishing may contain a surfactant as necessary. The surfactant can be appropriately selected from the surfactants exemplified above. In one aspect, the front-stage polishing composition may not substantially contain a surfactant. In addition, the front-stage polishing composition is within the scope of the effects significantly hindering the present invention. If necessary, it may further contain a slurry of a chelating agent, organic acid, organic acid salt, inorganic acid, inorganic acid salt, preservative, mildew inhibitor, etc. Well-known additives that can be used. The aforementioned additives may be, for example, known additives that can be used in the slurry used in the polishing step of silicon wafers. The composition for the first-stage polishing is the same as the composition for the finished polishing, and it is preferable not to substantially contain an oxidizing agent. [0139] <Grinding Composition Set> The items provided by the specification can include provision of a finished polishing composition containing any of the above-mentioned polishing compositions, after the polishing of the above-mentioned finished polishing composition The polishing composition set for the previous polishing composition used in the polishing performed in the previous stage. The above-mentioned finished polishing composition is typically a polishing composition containing at least polymer A as a water-soluble polymer. The preceding polishing composition constituting the polishing composition set may be any preceding polishing composition. By using such a polishing composition set, before the polishing by the above-mentioned finished polishing composition, the polishing by the above-mentioned first-stage polishing composition is performed first, so that the use of the polymer can be more appropriately used. A. The effect of reducing defects in the finished polishing composition. The weight ratio of the water-soluble polymer/abrasive particles in the preceding polishing composition can be set to be smaller than the weight ratio of the water-soluble polymer/abrasive particles in the completed polishing composition. In this way, the influence on the polishing efficiency in the previous polishing step can be suppressed, and the surface quality after finishing polishing can be effectively improved.　　[0140] The matters disclosed in this manual include the following. <1> A polishing composition comprising abrasive particles, a water-soluble polymer, and a basic compound, wherein the water-soluble polymer includes a polymer A, and the polymer A satisfies both of the following conditions : 　　(1) One molecule contains vinyl alcohol unit and non-vinyl alcohol unit; and, 　　(2) The adsorption parameter calculated by the following formula is 5 or more; 　　 adsorption parameter=[(C1-C2)/C1]× 100; 　　Here, C1 in the above formula contains 0.017% by weight of the polymer A and 0.009% by weight of ammonia, and the remaining part is the total amount of organic carbon contained in the test solution L1 composed of water, 　　The C2 in is the total amount of organic carbon contained in the upper liquid by centrifuging the test liquid L2 to precipitate the aforementioned abrasive particles. The test liquid L2 contains colloidal silica with a BET diameter of 35 nm of 0.46% by weight 1. The aforementioned polymer A is 0.017% by weight, ammonia is 0.009% by weight, and the remainder is composed of water.　　<2> The polishing composition as described in <1> above, wherein the polymer A is a copolymer having a vinyl alcohol-based segment and a non-vinyl alcohol-based segment in one molecule. The technique disclosed here can be suitably implemented using polymer A having such a configuration.　　<3> The polishing composition according to <1> or <2> above, wherein the polymer A is a copolymer containing vinyl alcohol units and oxyalkylene units in one molecule. The technique disclosed herein can be suitably implemented using polymer A comprising these units in combination.　　<4> The polishing composition according to any one of <1> to <3> above, wherein the polymer A is a copolymer containing a vinyl alcohol-based segment and an oxyalkylene-based segment in one molecule. The technique disclosed here can be suitably implemented using polymer A having such a configuration.　　<5> The polishing composition according to any one of <1> to <4> above, wherein the polymer A is a copolymer containing vinyl alcohol units and N-vinyl monomer units in one molecule. The technique disclosed herein can be suitably implemented using polymer A comprising these units in combination.　　<6> The polishing composition according to any one of <1> to <5> above, wherein the polymer A is a copolymer containing a vinyl alcohol-based segment and an N-vinyl-based segment in one molecule. The technique disclosed here can be suitably implemented using polymer A having such a configuration.　　<7> The polishing composition according to any one of the above <1> to <6>, wherein the weight average molecular weight of the aforementioned polymer A is 15×10⁴ the following. The technique disclosed herein can be suitably implemented using this polymer A.　　<8> The polishing composition according to any one of the above <1> to <7>, wherein the BET diameter of the aforementioned abrasive particles is 30 nm or less. By using abrasive particles of this size, there is a tendency to improve the surface quality after grinding.　　<9> The polishing composition according to any one of the above <1> to <8>, wherein each of the foregoing abrasive grains is 10¹⁷ The content of the aforementioned polymer A is 10 mg to 1000 mg. According to such a polishing composition, the meaning of using the polymer A tends to be more effectively exerted.　　<10> The polishing composition according to any one of <1> to <9> above, further including a weight average molecular weight of less than 1×10⁴ Of water-soluble organic compounds. By containing the water-soluble organic compound, the surface quality after grinding can be further improved.　　<11> The polishing composition according to any one of the above <1> to <10>, wherein the abrasive particles are silicon dioxide particles. In a polishing composition containing silica particles as abrasive particles, the use of the polymer A tends to be particularly effective.　　<12> The polishing composition according to any one of the above <1> to <11>, which is used for polishing silicon wafers. The above-mentioned polishing composition is particularly suitable as a polishing composition used for finishing polishing of silicon wafers. <13> A polishing composition set comprising: 　　a finished polishing composition containing the polishing composition according to any one of <1> to <12> above, and, 　　before using the aforementioned finished polishing composition The previous stage polishing composition is used for the polishing performed in the previous stage of the object polishing, and it includes abrasive particles, a water-soluble polymer, and an alkaline compound. [Embodiments] 　　 [0141] Hereinafter, several embodiments of the present invention will be described, but it is not intended to limit the present invention to those shown in the embodiments. In addition, in the following description, "parts" and "%" are weight standards unless otherwise defined.　　[0142] <Measurement of adsorption parameters> 　　 The adsorption parameters of each water-soluble polymer used in the following examples and comparative examples were calculated by the following operations.　　 Prepared a test liquid L1 containing water-soluble polymer 0.017%, ammonia 0.009%, and the remainder made of water. For this test solution L1, the total organic carbon content (TOC) was measured using an all-organic carbon meter (combustion catalyst oxidation method, type "TOC-5000A") manufactured by Shimadzu Corporation, which was converted into a volume to obtain the content of this test solution L1. The total amount of organic carbon C1.　　Furthermore, a test liquid L2 containing 0.46% of silicon dioxide particles, 0.017% of water-soluble polymer, and 0.009% of ammonia was prepared, and the remainder was composed of water. The silica particles use colloidal silica with a BET diameter of 35 nm. For the above test L2, a centrifugal separator manufactured by Beckman Coulter, model "Avanti HP-30I" was used, and centrifugal separation was performed at a rotation speed of 20,000 rpm for 30 minutes. After recovering the above centrifugal separation process, the upper clear liquid is measured, and the TOC of the upper clear liquid is measured by the above-mentioned total organic carbon meter. The total amount C2 of organic carbon contained in the clarified liquid is obtained by converting the measurement result into the volume of the clarified liquid.　　 From the above C1 and the above C2, the adsorption parameters were calculated by the following formula.　　Adsorption parameter=[(C1-C2)/C1]×100.　　[0143] <First-stage polishing step> 　　 The contents applicable to the previous-stage polishing steps of the following examples and comparative examples are as follows. (Preliminary polishing step I) 　　 prepared a composition I for previous stage polishing containing 1.00% of abrasive grains and 0.068% of basic compound, and the remainder being made of water. The abrasive particles used colloidal silica with a BET diameter of 35 nm. As the basic compound, potassium hydroxide (KOH) is used.　　 Directly use the polishing composition as the polishing liquid (working slurry), and polish the silicon wafer as the object to be polished under the following polishing conditions. The silicon wafer is a commercially available silicon single crystal wafer with a diameter of 300 mm (conductivity type: P type, crystal orientation: <100>, resistivity: 1Ω·cm or more and less than 100Ω·cm, no COP). [0144] [Previous polishing conditions] 　　 Grinding device: A blade grinding machine manufactured by Okamoto Work Machinery Co., Ltd., type "PNX-332B" 　　 Grinding load: 20kPa 　　 fixed plate rotation number: 20rpm 　　 carrier rotation number: 20rpm 　　 grinding pad: Fuji Product name "FP55" manufactured by Spin Ehime Co., Ltd. 　　 Slurry supply rate: 1 liter/min. Slurry temperature: 20°C 　　 Platen cooling water temperature: 20°C 　　 Grinding time: 2 minutes [0145] (previous grinding step II) 　　 modulation The previous stage polishing composition II contains 0.23% of abrasive grains, 0.003% of water-soluble polymer, and 0.014% of basic compound, and the remainder is made of water. Water-soluble polymer system uses Mw of 120×10⁴ The hydroxyethyl cellulose (HEC). The abrasive particles used colloidal silica with a BET diameter of 35 nm. The basic compound uses ammonia.　　 Except that the composition II for the previous stage polishing is directly used as the polishing liquid, the silicon wafer as the object to be polished is polished under the aforementioned previous stage polishing conditions in the same manner as in the previous stage polishing step I. [Preparation and Finished Polishing of Polishing Compositions] (Example 1) 　　 was prepared to include abrasive particles, water-soluble polymers and basic compounds at the concentrations shown in Table 1 and the remainder was made of water. Composition. The abrasive particles used colloidal silica with a BET diameter of 35 nm. The water-soluble polymer is a graft copolymer using polyvinyl alcohol (PVA) with a saponification degree of 95% or more as the main chain and polyethylene oxide (PEO) as the side chain (hereinafter referred to as "PVA-g-PEO" "). In this example, PVA-g-PEO with an Mw of 20,000 is used.　　 This polishing composition is directly used as a polishing liquid, and the silicon wafer that has completed the foregoing first-stage polishing step I is polished under the finishing polishing conditions described below. [Complete polishing conditions] 　　 Grinding device: Okamoto Machine Tool Co., Ltd.'s blade grinding machine, type "PNX-332B" 　　 Grinding load: 15kPa 　　 fixed plate rotation number: 30rpm 　　 carrier rotation number: 30rpm 　　 grinding pad: Fuji Abrasive pads made by Spin Ehime Corporation, trade name "POLYPAS27NX" 　　 Slurry supply rate: 2 liters/min Polishing liquid temperature: 20℃ 　　 Platen cooling water temperature: 20℃ 　　 Grinding time: 2 minutes [0148] Take out from the polishing device Silicon wafer after grinding, using NH₄ OH (29%): H₂ O₂ (31%): Deionized water (DIW) = 1: 3: 30 (volume ratio) washing solution (SC-1 washing). More specifically, two washing tanks equipped with ultrasonic oscillators with a frequency of 950 kHz are prepared, and the washing liquids are contained in the individual first and second washing tanks and kept at 60° C. After grinding The silicon wafer is placed in the first cleaning tank for 6 minutes, and then placed in the second cleaning tank for 6 minutes by using a rinsing tank using ultrapure water and ultrasonic waves, respectively, in the state of operating the above ultrasonic oscillator Immerse it, pull it into an isopropyl alcohol (IPA) environment and let it dry. (Example 2) 　　 except that the abrasive particle system uses colloidal silica with a BET diameter of 25 nm, and the amount of the basic compound is changed as shown in Table 1, the other system is prepared in the same manner as in Example 1. The polishing composition of this example is given. Except for using the polishing composition, the other operations were the same as in Example 1, and the completed polishing, washing, and drying of the silicon wafer that had completed the foregoing first polishing step I were performed.　　 [0150] (Example 3) 　　 Except that it further contained a surfactant in the concentration shown in Table 1, the polishing composition of this example was prepared in the same manner as in Example 1. As the surfactant, polyoxyethylene decyl ether with ethylene oxide addition mole number 5 (hereinafter referred to as "C10PEO5") was used. Except for using this polishing composition, the other operations are the same as in Example 1, and the completed polishing, washing, and drying of the silicon wafer that has completed the foregoing first-stage polishing step I are performed.　　 [0151] (Example 4) 　　 The silicon wafer which has completed the above-mentioned first stage polishing step II is subjected to the same finish polishing, washing and drying as in Example 1. (Example 5) In addition to changing the concentration of the basic compound as shown in Table 1, and using PVA-PVP as the water-soluble polymer at the concentration shown in Table 1, it also contains the interface of the concentration shown in Table 1. Except for the active agent, the polishing composition of this example was prepared in the same manner as in Example 2. The PVA-PVP is a random copolymer of vinyl alcohol and N-vinylpyrrolidone. The molar ratio of VA units: VP units included in the above PVA-PVP is 95:5. As the surfactant, polyoxyethylene lauryl ether ammonium sulfate with ethylene oxide addition mole number 18 (hereinafter referred to as "C12EO18SO3NH4") was used. Except for using this polishing composition, the same operations as in Example 1 were carried out, and the completed polishing, washing, and drying of the silicon wafer that had completed the foregoing first polishing step I were performed. (Comparative Examples 1, 2) In the polishing composition of Example 1, PVA-g-PEO used as a water-soluble polymer was changed to Mw and the concentration of polyvinyl alcohol as shown in Table 1. (The saponification degree is more than 95%, and the following is marked as "PVA") or polyethylene oxide (hereinafter as "PEO"). Except for using this polishing composition, the same operations as in Example 1 were carried out, and the completed polishing, washing, and drying of the silicon wafer that had completed the foregoing first polishing step I were performed. (Comparative Example 3) In the polishing composition of Example 1, instead of using PVA-g-PEO as a water-soluble polymer, PVA and PEO were simply mixed with the Mw and concentration shown in Table 1. . Except for using this polishing composition, the same operations as in Example 1 were carried out, and the completed polishing, washing, and drying of the silicon wafer that had completed the foregoing first polishing step I were performed.　　[0155] <Evaluation> 　　 The following evaluation was performed on the silicon wafers obtained by the above examples. [0156] (LPD-N number measurement) 　　 uses KLA-Tencor's wafer inspection device, trade name "SURFSCAN SP2", in the same device DCO mode to measure the LPD- present on the surface of the silicon wafer (polished surface) The number of N. Using the following three-stage benchmark, the measured number of LPD-N (LPD-N number) is shown in Table 1. A: Less than 50 B: More than 50, less than 100 C: More than 100 [0157] (Haze measurement) 　　Using the wafer inspection device made by KLA-Tencor, the brand name "SURFSCAN SP2" in DWO mode The haze (ppm) was measured, and the results are shown in Table 1 using the following three-stage benchmark.　　A: Less than 0.1ppm 　　B: 0.1ppm or more, 0.15ppm or less 　　C: More than 0.15ppm 　　[0158]

[0159] As shown in Table 1, compared with Comparative Examples 1 to 3 in which the polishing composition that does not contain a water-soluble polymer that satisfies the above conditions was used for polishing, the use of the conditions satisfying conditions (1) and (2) was included. In Examples 1 to 4 and Example 5 of the polishing compositions of the water-soluble polymers of both parties, the LPD-N number and haze on the surface after the polishing were significantly reduced. From the results shown in the above table, it can be seen that by using abrasive particles with a small BET diameter or blending a surfactant, the LPD-N number and haze can be further improved (Examples 2 and 3). In addition, it was found that by using the composition for the first-stage polishing including the water-soluble polymer in the first-stage polishing step, the LPD-N after completion of the polishing can be further improved (Example 4).　　 [0160] Above, the specific examples of the present invention have been described in detail, but these are only examples and are not intended to limit the scope of patent application. The technology described in the patent application scope includes various modifications and changes to the specific examples illustrated above.

Claims (15)

A polishing composition comprising abrasive particles, a water-soluble polymer and a basic compound, wherein the water-soluble polymer includes a polymer A, and the polymer A is a vinyl alcohol unit in one molecule The copolymer with the oxyalkylene unit has a content of the polymer A of 0.01 parts by weight or more and 40 parts by weight or less with respect to 100 parts by weight of the abrasive particles contained in the polishing composition, and the polymer A satisfies the following Both conditions: (1) One molecule contains vinyl alcohol units and non-vinyl alcohol units; and, (2) The adsorption parameter calculated by the following formula is 5 or more; adsorption parameter = [(C1-C2)/ C1]×100; Here, C1 in the above formula is the total amount of organic carbon contained in the test solution L1 composed of water containing 0.017% by weight of the aforementioned polymer A and 0.009% by weight of ammonia, and the remainder , C2 in the above formula is the total amount of organic carbon contained in the upper liquid after centrifuging the test liquid L2 to precipitate the abrasive particles, the test liquid L2 contains colloidal dioxide with a BET diameter of 35 nm 0.46% by weight of silicon, 0.017% by weight of the aforementioned polymer A, and 0.009% by weight of ammonia, and the remainder is composed of water. The polishing composition according to claim 1, wherein the aforementioned polymer A is a copolymer having a vinyl alcohol-based segment and a non-vinyl alcohol-based segment in one molecule. The polishing composition according to claim 1 or 2, wherein the aforementioned polymer A is a copolymer containing a vinyl alcohol-based segment and an oxyalkylene-based segment in one molecule. The polishing composition according to claim 1 or 2, further comprising a water-soluble organic compound having a weight average molecular weight of less than 1×10 ⁴ . A polishing composition comprising abrasive particles, water-soluble polymer, basic compound and water-soluble organic compound, wherein the water-soluble polymer includes polymer A, and the polymer A is in one molecule A copolymer containing vinyl alcohol units and N-vinyl monomer units, the water-soluble organic compound is an anionic surfactant having a weight average molecular weight of less than 1×10 ⁴ , and the polymer A satisfies both of the following conditions : (1) One molecule contains vinyl alcohol unit and non-vinyl alcohol unit; and, (2) The adsorption parameter calculated by the following formula is 5 or more; adsorption parameter = [(C1-C2)/C1]× 100; Here, C1 in the aforementioned formula is the total amount of organic carbon contained in the test solution L1 composed of water in which the aforementioned polymer A is 0.017% by weight and ammonia is 0.009% by weight, and the remainder is the aforementioned formula The C2 in is the total amount of organic carbon contained in the upper liquid after centrifugal separation of the test liquid L2 to precipitate the aforementioned abrasive particles. The test liquid L2 contains colloidal silica with a BET diameter of 35 nm and a weight of 0.46 %, the aforementioned polymer A is 0.017% by weight, ammonia is 0.009% by weight, and the remainder is composed of water. The polishing composition according to claim 5, wherein the aforementioned polymer A is a copolymer having a vinyl alcohol-based segment and a non-vinyl alcohol-based segment in one molecule. The polishing composition according to claim 5 or 6, wherein the polymer A is a copolymer containing a vinyl alcohol-based segment and an N-vinyl-based segment in one molecule. The polishing composition according to claim 5 or 6, wherein the aforementioned N-vinyl monomer unit is N-vinylpyrrolidone. The polishing composition according to claim 7, wherein the aforementioned N-vinyl-based segment is a segment having a repeating unit derived from N-vinylpyrrolidone as the main repeating unit. The polishing composition according to claim 1, 2, 5 or 6, wherein the weight average molecular weight of the aforementioned polymer A is 15×10 ⁴ or less. The polishing composition according to claim 1, 2, 5 or 6, wherein the BET diameter of the aforementioned abrasive particles is 30 nm or less. The polishing composition according to claim 1, 2, 5, or 6, wherein the content of the polymer A per 10 ¹⁷ abrasive particles is 10 mg to 1000 mg. The polishing composition according to claim 1, 2, 5, or 6, wherein the aforementioned abrasive particles are silica particles. The polishing composition of claim 1, 2, 5, or 6 is used for polishing silicon wafers. A polishing composition set comprising: a finished polishing composition containing the polishing composition according to any one of claims 1 to 14, and, after being polished using the aforementioned finished polishing composition In the polishing performed in the previous stage, the previous polishing composition is used, and it includes abrasive particles, a water-soluble polymer, and an alkaline compound.