TWI687500B - Adhesive sheet - Google Patents

Adhesive sheet Download PDF

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TWI687500B
TWI687500B TW104108645A TW104108645A TWI687500B TW I687500 B TWI687500 B TW I687500B TW 104108645 A TW104108645 A TW 104108645A TW 104108645 A TW104108645 A TW 104108645A TW I687500 B TWI687500 B TW I687500B
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buffer layer
adhesive sheet
adhesive
meth
layer
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TW104108645A
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TW201542753A (en
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富永知親
斎藤陽介
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日商琳得科股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C09J4/06Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09J159/00 - C09J187/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

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  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本發明係提供一種黏著薄片,其係具有楊氏模量為1000MPa以上之剛性基材、與設置於該剛性基材之一面側的緩衝層、與設置於該剛性基材之另一面側的黏著劑層之黏著薄片,其特徵為前述緩衝層係從包含能量線聚合性化合物之緩衝層形成用組成物形成而成之層,且先端曲率半徑100nm及稜間角115°之三角錘形狀壓頭的先端以10μm/分鐘之速度,擠入於該緩衝層時之壓縮荷重到達2mN所必須之擠入深度(X)為2.5μm以上,係一種黏著薄片,異物吸附性優異,作為半導體晶圓之研削加工的BG薄片使用時,可防止半導體晶圓的破裂。 The present invention provides an adhesive sheet having a rigid substrate with a Young's modulus of 1000 MPa or more, a buffer layer provided on one side of the rigid substrate, and an adhesive provided on the other side of the rigid substrate The adhesive sheet of the adhesive layer is characterized in that the buffer layer is a layer formed from a composition for forming a buffer layer containing an energy ray polymerizable compound, and has a triangular hammer-shaped indenter with a radius of curvature of 100 nm and an angle of 115° between edges At the tip of 10μm/min, the squeezing depth (X) necessary to reach 2mN when the compression load when squeezed into the buffer layer is 2.5μm or more, is an adhesive sheet, excellent in foreign body adsorption, as a semiconductor wafer Grinding of processed BG sheets can prevent cracking of semiconductor wafers.

Description

黏著薄片 Adhesive sheet

本發明係關於黏著薄片,更詳細而言,例如 係關於作為半導體晶圓之研削加工的背面研磨薄片使用時,可防止半導體晶圓的破裂之黏著薄片。 The present invention relates to an adhesive sheet. More specifically, for example This is an adhesive sheet that prevents the semiconductor wafer from cracking when used as a back-grinding sheet for semiconductor wafer grinding.

信息終端裝置之薄型化、小型化、多機能化急速進展中,搭載該等之半導體晶片亦相同,正尋求薄型化、高密度化。以往,必須產生將厚度為350μm左右之半導體晶片,薄至厚度50~100μm或者其以下。為了對應如此之半導體晶片薄型化的要求,正進行研削半導體晶圓之內面以進行薄型化。 The thinning, miniaturization, and multi-functionalization of information terminal devices are progressing rapidly, and the semiconductor wafers equipped with these are also the same, and are seeking thinning and high density. In the past, it was necessary to produce semiconductor wafers with a thickness of about 350 μm to a thickness of 50 to 100 μm or less. In order to meet the requirements for thinning of such semiconductor wafers, the inner surface of the semiconductor wafer is being ground for thinning.

近年來,有時於表面形成由高度30μm~100μm左右之焊接等所構成之凸塊(電極),研削具有凹凸部分之半導體晶圓的內面。內面研削附如此凸塊之半導體晶圓時,為了保護凸塊部分的表面,於形成凸塊部分的表面,貼附專用之黏著薄片(背面研磨薄片(BG薄片))。 In recent years, bumps (electrodes) composed of solders with a height of about 30 μm to 100 μm are sometimes formed on the surface, and the inner surface of a semiconductor wafer having irregularities is ground. When grinding the semiconductor wafer with such bumps on the inner surface, in order to protect the surface of the bump portion, a dedicated adhesive sheet (back ground grinding sheet (BG sheet)) is attached to the surface where the bump portion is formed.

例如於專利文獻1,揭示有從晶圓的表面側形成特定深度的溝後,從此晶圓的內面側進行研削之「先切 割法」中,為了保護晶圓的表面側所使用之黏著薄片。專利文獻1所揭示之黏著薄片,係具有於剛性基材一側的面設置振動緩和層,於另一側的面設置黏著劑層的構成。 For example, in Patent Document 1, it is disclosed that after forming a groove of a specific depth from the surface side of the wafer, the first cutting is performed from the inner side of the wafer. In the dicing method, the adhesive sheet used to protect the surface side of the wafer. The adhesive sheet disclosed in Patent Document 1 has a configuration in which a vibration relaxation layer is provided on the surface on one side of the rigid substrate and an adhesive layer is provided on the surface on the other side.

此專利文獻1所揭示之黏著薄片,由於將剛性基材之厚度與楊氏模量、及振動緩和層之厚度與動態黏彈性之tanδ的最大值調整至特定的範圍,以先切割法作為BG薄片使用時,可製造極薄且無裂紋或變色之半導體晶片。 The adhesive sheet disclosed in this Patent Document 1 adjusts the thickness of the rigid substrate and Young's modulus, and the thickness of the vibration alleviation layer and the maximum value of the dynamic viscoelastic tan δ to a specific range, and the first cutting method is used as BG When the sheet is used, it can manufacture extremely thin semiconductor wafers without cracks or discoloration.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2005-343997號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2005-343997

然而,半導體晶圓之內面的切削加工中,將貼附BG薄片之半導體晶圓的該BG薄片,設置在晶圓內面切削機之夾頭座上時,附著於該夾頭座上之異物為原因,由於半導體晶圓之切削加工,有半導體晶圓產生破裂的情況。 However, when cutting the inner surface of the semiconductor wafer, when the BG sheet of the semiconductor wafer to which the BG sheet is attached is placed on the chuck base of the wafer inner surface cutting machine, the BG sheet is attached to the chuck base The foreign matter is the cause. Due to the cutting process of the semiconductor wafer, the semiconductor wafer may be cracked.

亦即,附著異物之夾頭座上,設置附BG薄片之半導體晶圓的BG薄片時,BG薄片僅為該異物的厚度,與該異物相反側溶脹,於半導體晶圓的內面形成凸部。於此狀態,切削半導體晶圓的內面時,半導體晶圓的內面所形成之凸部附近,由於較其他部分厚度更薄,易產生破裂。 That is, when a BG sheet of a semiconductor wafer with a BG sheet is provided on a chuck base to which a foreign substance is attached, the BG sheet is only the thickness of the foreign substance, and the opposite side of the foreign substance swells to form a convex portion on the inner surface of the semiconductor wafer . In this state, when the inner surface of the semiconductor wafer is cut, the vicinity of the protruding portion formed on the inner surface of the semiconductor wafer is thinner than other parts, and is prone to cracking.

尚,於專利文獻1,並未有對於由於如此之夾頭座上之異物造成晶圓破裂的研究。 Still, in Patent Document 1, there is no research on wafer cracking caused by such foreign objects on the chuck base.

因此,用在如此之半導體晶圓的切削加工之黏著薄片,尋求即使設置該黏著薄片於附著異物之座上,可抑制與該異物相反側的溶脹程度的異物吸附性。 Therefore, the adhesive sheet used in such a semiconductor wafer cutting process seeks to suppress the degree of swelling of the foreign substance on the opposite side of the foreign substance even if the adhesive sheet is provided on the seat where the foreign substance is attached.

本發明係提供一種異物吸附性優異,例如作為半導體晶圓之研削加工的BG薄片使用時,可防止半導體晶圓的破裂之黏著薄片作為目的。 The present invention is intended to provide an adhesive sheet that is excellent in adsorption of foreign substances and, for example, is used as a BG sheet for grinding and processing semiconductor wafers to prevent cracking of the semiconductor wafer.

本發明者們,發現於楊氏模量為特定值以上之剛性基材的一面側具有緩衝層、於另一面側具有黏著劑層,該緩衝層係將特定形狀的壓頭擠入該緩衝層時之壓縮荷重到達2mN所必須之擠入深度為特定值以上之黏著薄片,可解決上述課題,而完成本發明。 The inventors found that a rigid substrate with a Young's modulus above a certain value has a buffer layer on one side and an adhesive layer on the other side. The buffer layer squeezes a specific shape of indenter into the buffer layer When the compressive load at the time reaches 2mN, the adhesive sheet with a squeezing depth of more than a certain value can solve the above-mentioned problems and complete the present invention.

亦即,本發明係提供下述〔1〕~〔9〕者。 That is, the present invention provides the following [1] to [9].

〔1〕一種黏著薄片,其係具有楊氏模量為1000MPa以上之剛性基材、與設置於該剛性基材之一面側的緩衝層、與設置於該剛性基材之另一面側的黏著劑層之黏著薄片,其特徵為前述緩衝層係由包含能量線聚合性化合物之緩衝層形成用組成物形成而成之層,且將先端曲率半徑100nm及稜間角115°之三角錘形狀壓頭的先端以10μm/分鐘之速度,擠入於該緩衝層時之壓縮荷重到達2mN所必須之擠入深度(X)為2.5μm以上。 [1] An adhesive sheet comprising a rigid substrate having a Young's modulus of 1000 MPa or more, a buffer layer provided on one side of the rigid substrate, and an adhesive provided on the other side of the rigid substrate The adhesive sheet of the layer is characterized in that the aforementioned buffer layer is a layer formed of a composition for forming a buffer layer containing an energy ray polymerizable compound, and a triangular hammer-shaped indenter having a apex curvature radius of 100 nm and an inter-angle of 115° At the speed of 10μm/min, the squeezing depth (X) necessary for the compression load to reach 2mN when squeezed into the buffer layer is 2.5μm or more.

〔2〕如上述〔1〕之黏著薄片,其中,前述緩衝層形成用組成物作為前述能量線聚合性化合物,係包含胺基甲酸乙酯(甲基)丙烯酸酯(a1)、具有環形成原子數6~20之脂環基或雜環基之聚合性化合物(a2)、及具有官能基之聚合性化合物(a3)。 [2] The adhesive sheet according to [1] above, wherein the composition for forming a buffer layer as the energy ray polymerizable compound contains ethyl urethane (meth)acrylate (a1) and has a ring-forming atom Number 6 to 20 of the alicyclic group or heterocyclic group polymerizable compound (a2), and the functional group of the polymerizable compound (a3).

〔3〕如上述〔2〕之黏著薄片,其中,前述緩衝層形成用組成物中之成分(a2)與成分(a3)的含量比〔(a2)/(a3)〕為0.5~3.0。 [3] The adhesive sheet according to [2] above, wherein the content ratio of the component (a2) to the component (a3) in the buffer layer forming composition [(a2)/(a3)] is 0.5 to 3.0.

〔4〕如上述〔2〕或〔3〕之黏著薄片,其中,成分(a2)為含脂環基之(甲基)丙烯酸酯。 [4] The adhesive sheet as described in [2] or [3] above, wherein the component (a2) is an alicyclic group-containing (meth)acrylate.

〔5〕如上述〔2〕~〔4〕中任一項之黏著薄片,其中,成分(a3)為含羥基之(甲基)丙烯酸酯。 [5] The adhesive sheet according to any one of [2] to [4] above, wherein the component (a3) is a hydroxyl group-containing (meth)acrylate.

〔6〕如上述〔1〕~〔5〕中任一項之黏著薄片,其中,前述緩衝層的厚度為5~100μm。 [6] The adhesive sheet according to any one of [1] to [5] above, wherein the thickness of the buffer layer is 5 to 100 μm.

〔7〕如上述〔1〕~〔6〕中任一項之黏著薄片,其中,在前述緩衝層之-5~120℃之動態黏彈性之tanδ的最大值為0.5以上。 [7] The adhesive sheet according to any one of [1] to [6] above, wherein the maximum value of the tan δ of the dynamic viscoelasticity at -5 to 120° C. of the buffer layer is 0.5 or more.

〔8〕如上述〔1〕~〔7〕中任一項之黏著薄片,其中,於前述剛性基材與前述緩衝層之間、及前述剛性基材與前述黏著劑層之間之至少一者具有易接著層。 [8] The adhesive sheet according to any one of [1] to [7] above, wherein at least one of the rigid substrate and the buffer layer and the rigid substrate and the adhesive layer With easy adhesion layer.

〔9〕如上述〔1〕~〔8〕中任一項之黏著薄片,其係於半導體晶圓之切削加工中,作為保護半導體晶圓之表面側之背面研磨薄片使用。 [9] The adhesive sheet according to any one of the above [1] to [8], which is used for cutting a semiconductor wafer and is used as a back grinding sheet for protecting the surface side of the semiconductor wafer.

本發明之黏著薄片係異物吸附性優異。因此,本發明之黏著薄片,例如作為半導體晶圓之研削加工的BG薄片使用時,可防止半導體晶圓的破裂。 The adhesive sheet of the present invention is excellent in foreign substance adsorption. Therefore, when the adhesive sheet of the present invention is used as a BG sheet for grinding a semiconductor wafer, for example, it can prevent cracking of the semiconductor wafer.

1a、1b、1c、1d‧‧‧黏著薄片 1a, 1b, 1c, 1d

11‧‧‧剛性基材 11‧‧‧Rigid substrate

12‧‧‧緩衝層 12‧‧‧buffer layer

13‧‧‧黏著劑層 13‧‧‧Adhesive layer

14a、14b‧‧‧剝離薄片 14a, 14b ‧‧‧ peel sheet

15a、15b‧‧‧易接著層 15a, 15b‧‧‧easy adhesion layer

[圖1]係表示本發明之黏著薄片構成之一例之黏著薄片的截面圖。 1 is a cross-sectional view of an adhesive sheet showing an example of the configuration of the adhesive sheet of the present invention.

本說明書之記載中,所謂「能量線」,例如係指紫外線、電子束等,較佳為紫外線或電子束。 In the description of this specification, the "energy rays" refer to ultraviolet rays, electron beams, etc., and preferably ultraviolet rays or electron beams.

又,本說明書之記載中,「質量平均分子量(Mw)」係指以凝膠滲透層析(GPC)法測定之標準聚苯乙烯換算之值,具體而言,係根據實施例所記載之方法測定之值。 In addition, in the description of this specification, "mass average molecular weight (Mw)" refers to the value converted to standard polystyrene measured by gel permeation chromatography (GPC) method, specifically, according to the method described in the examples The measured value.

除此之外,本說明書之記載中,例如所謂「(甲基)丙烯酸酯」,係意指「丙烯酸酯」與「甲基丙烯酸酯」雙方之語,其他類似用語亦相同。 In addition, in the description of this specification, for example, "(meth)acrylate" means both "acrylate" and "methacrylate", and other similar terms are also the same.

[黏著薄片之構成] [Composition of Adhesive Sheet]

本發明之黏著薄片若為具有剛性基材、與設置於該剛性基材之一面側的緩衝層、與設置於該剛性基材之另一面側的黏著劑層者,則並未特別限制。 The adhesive sheet of the present invention is not particularly limited as long as it has a rigid substrate, a buffer layer provided on one side of the rigid substrate, and an adhesive layer provided on the other side of the rigid substrate.

圖1係表示本發明之黏著薄片構成之一例之黏著薄片的截面圖。 1 is a cross-sectional view of an adhesive sheet showing an example of the configuration of the adhesive sheet of the present invention.

作為本發明之黏著薄片構成之一例,如圖1(a)所示,可列舉於剛性基材11一側的面側具有緩衝層12、於剛性基材11之另一側的面側具有黏著劑層13之黏著薄片1a。 As an example of the configuration of the adhesive sheet of the present invention, as shown in FIG. 1( a ), it can be cited that the rigid substrate 11 has a buffer layer 12 on the surface side, and the rigid substrate 11 has an adhesive layer on the other surface side. The adhesive sheet 1a of the adhesive layer 13.

又,本發明之黏著薄片在圖1(a)所示之黏著 薄片1a中,可作為於緩衝層12及黏著劑層13中之至少一側,進一步具有剝離薄片之黏著薄片。 Moreover, the adhesive sheet of the present invention is adhered as shown in FIG. 1(a) The sheet 1a can serve as an adhesive sheet on which at least one side of the buffer layer 12 and the adhesive layer 13 further has a peeling sheet.

圖1(b)所示之黏著薄片1b雖於緩衝層12及黏著劑層13雙側的面上,具有分別設置剝離薄片14a、14b之構成,但本發明之黏著薄片可為僅於緩衝層12及黏著劑層13之一側設置剝離薄片之構成。 Although the adhesive sheet 1b shown in FIG. 1(b) is provided on both sides of the buffer layer 12 and the adhesive layer 13 with peeling sheets 14a and 14b, respectively, the adhesive sheet of the present invention may be only on the buffer layer 12 and one side of the adhesive layer 13 are provided with a release sheet.

又,本發明之黏著薄片係在圖1(a)及(b)所示 之黏著薄片1a、1b中,可作為於剛性基材11與緩衝層12之間、及剛性基材11與黏著劑層13之間中之至少一側,具有易接著層之黏著薄片。 In addition, the adhesive sheet of the present invention is shown in FIGS. 1(a) and (b) The adhesive sheets 1a and 1b can be used as at least one side between the rigid substrate 11 and the buffer layer 12 and between the rigid substrate 11 and the adhesive layer 13 and have an easy-adhesive layer.

圖1(c)及(d)所示之黏著薄片1c、1d相對於上述黏著薄片1a、1b之構成,進而於剛性基材11與緩衝層12之間、以及剛性基材11與黏著劑層13之間,具有分別設置易接著層15a、15b之構成。尚,本發明之黏著薄片可為僅設置易接著層15a、15b一側之構成。 The configuration of the adhesive sheets 1c, 1d shown in FIGS. 1(c) and (d) with respect to the above-mentioned adhesive sheets 1a, 1b is further between the rigid substrate 11 and the buffer layer 12, and between the rigid substrate 11 and the adhesive layer Between 13, there is a configuration in which easy-adhesion layers 15a and 15b are provided. Still, the adhesive sheet of the present invention may be configured to provide only the side of the easy-adhesion layers 15a and 15b.

尚,圖1(d)所示之黏著薄片1d雖於緩衝層12及黏著劑層13雙方的面上,具有分別設置剝離薄片14a、14b之 構成,但本發明之黏著薄片可為僅於緩衝層12及黏著劑層13之一側,設置剝離薄片之構成。 In addition, although the adhesive sheet 1d shown in FIG. 1(d) has the peeling sheets 14a and 14b provided on both surfaces of the buffer layer 12 and the adhesive layer 13, respectively Structure, but the adhesive sheet of the present invention may be configured to provide a release sheet only on one side of the buffer layer 12 and the adhesive layer 13.

以下,關於構成本發明之黏著薄片之各層進行詳述。 Hereinafter, each layer constituting the adhesive sheet of the present invention will be described in detail.

<剛性基材> <rigid substrate>

本發明之黏著薄片所具有之剛性基材,係楊氏模量為1000MPa以上之剛性基材。使用楊氏模量未達1000MPa之基材時,將所得之黏著薄片貼附在半導體晶圓時,由於該基材的延伸較大,易產生應力,因為易產生貼附該黏著薄片後之半導體晶圓的翹曲故不佳。 The rigid substrate of the adhesive sheet of the present invention is a rigid substrate with a Young's modulus of 1000 MPa or more. When using a substrate with a Young's modulus of less than 1000 MPa, when the resulting adhesive sheet is attached to a semiconductor wafer, due to the greater extension of the substrate, stress is likely to occur because the semiconductor after the adhesive sheet is attached is likely to occur Wafer warpage is therefore poor.

還有,於本發明之黏著薄片,即使於藉由使用楊氏模量為1000MPa以上之剛性基材,貼附半導體晶圓時,由於基材的延伸小,可抑制翹曲的產生。此係例如即使在半導體晶圓的表面,容易產生如設置有機膜之翹曲的構成,由於黏著薄片整體具有剛性,變成可抑制半導體晶圓的翹曲。 In addition, in the adhesive sheet of the present invention, even when a semiconductor substrate is attached by using a rigid substrate having a Young's modulus of 1000 MPa or more, the substrate can be suppressed from being warped due to the small extension of the substrate. For example, even on the surface of a semiconductor wafer, a structure such as warpage provided with an organic film is likely to occur. Since the entire adhesive sheet has rigidity, the warpage of the semiconductor wafer can be suppressed.

作為於本發明所使用之剛性基材的楊氏模 量,從將所得之黏著薄片貼附在半導體晶圓時,抑制該半導體晶圓的翹曲之觀點、以及將該黏著薄片貼附半導體晶圓時之作業性(機械適性)變優良的觀點來看,較佳為1000~30000MPa,更佳為1300~20000MPa,再更佳為1600~15000MPa,又再更佳為1800~10000MPa。 Young's mold as a rigid substrate used in the present invention Amount, from the viewpoint of suppressing warpage of the semiconductor wafer when attaching the obtained adhesive sheet to the semiconductor wafer, and from the viewpoint of improving workability (mechanical suitability) when attaching the adhesive sheet to the semiconductor wafer In view of this, it is preferably 1,000 to 30,000 MPa, more preferably 1,300 to 20,000 MPa, even more preferably 1,600 to 15,000 MPa, and still more preferably 1,800 to 10,000 MPa.

尚,本發明之剛性基材的楊氏模量係意指藉由實施例所記載之方法測定之值。 Still, the Young's modulus of the rigid substrate of the present invention means the value measured by the method described in the examples.

剛性基材的厚度若剛性基材的楊氏模量為上 述範圍,雖並未特別限制,但從將本發明之黏著薄片貼附在半導體晶圓時之作業性(機械適性)變優良的觀點,以及減少黏著薄片從半導體晶圓(晶片)剝離時之應力的觀點來看,較佳為10~1000μm,更佳為20~400μm,再更佳為25~150μm,又再更佳為30~120μm。 The thickness of the rigid substrate if the Young's modulus of the rigid substrate is above Although the scope is not particularly limited, from the viewpoint of improving the workability (mechanical suitability) when attaching the adhesive sheet of the present invention to a semiconductor wafer, and reducing the peeling of the adhesive sheet from the semiconductor wafer (wafer) From the viewpoint of stress, it is preferably 10 to 1000 μm, more preferably 20 to 400 μm, still more preferably 25 to 150 μm, and still more preferably 30 to 120 μm.

作為本發明所使用之剛性基材,若楊氏模量 為上述範圍雖並未特別限制,但從耐水性及耐熱性的觀點來看,較佳為樹脂薄膜。 As the rigid substrate used in the present invention, if the Young's modulus Although the above range is not particularly limited, it is preferably a resin film from the viewpoint of water resistance and heat resistance.

作為構成該樹脂薄膜之樹脂,例如可列舉聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚對苯二甲酸丁二酯、全芳香族聚酯等之聚酯、聚醯胺、聚醯亞胺、聚縮醛、聚碳酸酯、改質聚苯醚、聚硫化苯、聚碸、聚醚酮、二軸拉延聚丙烯等。 Examples of the resin constituting the resin film include polyesters such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, and fully aromatic polyesters, and polyamides. , Polyimide, Polyacetal, Polycarbonate, Modified Polyphenylene Ether, Polysulfide Benzene, Polysulfone, Polyether Ketone, Biaxially Drawn Polypropylene, etc.

此等之樹脂當中,較佳為選自聚酯、聚醯胺、聚醯亞胺、二軸拉延聚丙烯中之1種以上,更佳為聚酯,再更佳為聚對苯二甲酸乙二酯。 Among these resins, one or more selected from the group consisting of polyester, polyamide, polyimide, and biaxially drawn polypropylene are preferred, more preferably polyester, and even more preferably polyterephthalic acid Ethylene glycol.

尚,本發明所使用之剛性基材可為選自由上述之樹脂中之1種或2種以上的樹脂所構成之樹脂薄膜的單層薄膜,亦可為層合2種以上此等之樹脂薄膜之層合薄膜。 Still, the rigid substrate used in the present invention may be a single-layer film selected from a resin film composed of one or more of the above resins, or may be a laminate of two or more of these resin films Laminated film.

又,本發明所使用之剛性基材中,不損及本 發明的效果的範圍中,亦可含有填料、著色劑、抗靜電劑、抗氧化劑、有機潤滑劑、觸媒等。 In addition, the rigid substrate used in the present invention Within the scope of the effects of the invention, fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, etc. may also be included.

又,基材可為透明者、可為不透明者,可依所期望被 著色或蒸鍍。 In addition, the substrate can be transparent or opaque, and can be Coloring or evaporation.

尚,本發明所使用之剛性基材中之至少一側的表面中,為了提昇與緩衝層及/或黏著劑層的密著性,可實施電暈處理等之接著處理,亦可設置後述之易接著層。 In addition, in order to improve the adhesion to the buffer layer and/or the adhesive layer on the surface of at least one side of the rigid substrate used in the present invention, a subsequent treatment such as corona treatment may be performed, and the following may be provided. Easy to layer.

<緩衝層> <buffer layer>

本發明之黏著薄片所具有之緩衝層,係由包含能量線聚合性化合物之緩衝層形成用組成物形成而成之層,將先端曲率半徑100nm及稜間角115°之三角錘形狀壓頭的先端以10μm/分鐘的速度,擠入該緩衝層時之壓縮荷重到達2mN所必須之擠入深度(X)(以下亦單稱為「擠入深度(X)」)調整成2.5μm以上之層。 The buffer layer of the adhesive sheet of the present invention is a layer formed of a composition for forming a buffer layer containing an energy ray polymerizable compound, and a triangular hammer-shaped indenter with a tip radius of curvature of 100 nm and an inter-angle of 115° Adjust the squeezing depth (X) necessary for the compression load when the compressive load reaches 2mN when squeezing into the buffer layer at a speed of 10μm/minute (hereinafter also referred to as "squeezing depth (X)") to a layer of 2.5μm or more .

緩衝層由於係由包含能量線聚合性化合物之緩衝層形成用組成物形成而成之層,藉由緩衝層形成用組成物組成的選擇,來調整黏彈性是比較容易。因此,例如將黏著薄片作為BG薄片使用時,無法緩和因半導體晶圓的研削導致之振動,可抑制於半導體晶圓產生破裂或裂紋、或黏著薄片背面從真空座漂浮等之問題的發生。 Since the buffer layer is formed of a composition for forming a buffer layer containing an energy ray polymerizable compound, it is relatively easy to adjust the viscoelasticity by selecting the composition of the composition for forming a buffer layer. Therefore, when the adhesive sheet is used as a BG sheet, for example, the vibration caused by grinding of the semiconductor wafer cannot be alleviated, and the occurrence of problems such as cracks or cracks in the semiconductor wafer or floating of the adhesive sheet from the vacuum seat can be suppressed.

又,本發明者們發現在黏著薄片的構成中,藉由設置將上述之擠入深度(X)調整成2.5μm以上之緩衝層,提昇異物吸附性,例如將本發明之黏著薄片作為半導體晶圓之研削加工的BG薄片使用時,可有效果地防止半導體晶圓的破裂。 In addition, the inventors found that in the structure of the adhesive sheet, by providing a buffer layer that adjusts the above-mentioned squeezing depth (X) to 2.5 μm or more, the foreign substance adsorption is improved, for example, the adhesive sheet of the present invention is used as a semiconductor crystal When using the round ground BG sheet, it can effectively prevent the semiconductor wafer from cracking.

另外,具有該擠入深度(X)未達2.5μm之緩衝層的黏 著薄片時,無法充分提昇異物吸附性,將該黏著薄片作為半導體晶圓之研削加工的BG薄片使用時,有易產生半導體晶圓的破裂之傾向。 In addition, the adhesive layer having the buffer layer with a penetration depth (X) of less than 2.5 μm When the wafer is stuck, the foreign substance adsorption cannot be sufficiently improved. When this adhesive sheet is used as a BG sheet for semiconductor wafer grinding, there is a tendency for the semiconductor wafer to crack.

上述之擠入深度(X),從提昇所得之黏著薄片 的異物吸附性的觀點來看,較佳為2.5~20.0μm,更佳為2.8~15.0μm,再更佳為3.0~10.0μm,又再更佳為3.2~7.0μm。 The above-mentioned squeeze into the depth (X), the adhesive sheet obtained from lifting From the viewpoint of foreign substance adsorption, it is preferably 2.5 to 20.0 μm, more preferably 2.8 to 15.0 μm, even more preferably 3.0 to 10.0 μm, and still more preferably 3.2 to 7.0 μm.

尚,本發明中,該擠入深度(X)係意指藉由實施例所記載之方法所測定之值。 In the present invention, the penetration depth (X) means the value measured by the method described in the examples.

又,該擠入深度(X)藉由適當變更形成緩衝層之緩衝層形成用組成物中所包含之成分的種類或含量、緩衝層之硬化程度等,可如屬於在上述範圍內調整。 In addition, the penetration depth (X) can be adjusted within the above-mentioned range by appropriately changing the type or content of the components included in the buffer layer forming composition for forming the buffer layer, the degree of hardening of the buffer layer, and the like.

緩衝層在-5~120℃之動態黏彈性之tanδ的最 大值(以下亦單稱為「tanδ之最大值」),較佳為0.5以上,更佳為0.8以上,再更佳為1.0以上,又再更佳為1.2以上。 The maximum viscoelastic tanδ of the buffer layer at -5~120℃ A large value (hereinafter also referred to simply as "the maximum value of tan δ") is preferably 0.5 or more, more preferably 0.8 or more, even more preferably 1.0 or more, and still more preferably 1.2 or more.

緩衝層之tan δ的最大值若為0.5以上,先切割法中,將所得之黏著薄片貼附在晶片群,進行該晶片群的內面之研削加工時,由於緩衝層吸收研磨粒之振動或衝撃的效果更高,即使將晶片群研削至100μm以下,亦可抑制角裂紋、研削面變色。 If the maximum value of tan δ of the buffer layer is 0.5 or more, in the first dicing method, the obtained adhesive sheet is attached to the wafer group, and when the inner surface of the wafer group is ground, the buffer layer absorbs the vibration of the abrasive particles or The impact effect is higher. Even if the wafer group is ground to 100 μm or less, corner cracking and discoloration of the ground surface can be suppressed.

尚,tanδ被稱為損失正切,被定義為「損失彈性率/儲藏彈性率」,係由動態黏彈性測定裝置,藉由相對於給予對象物之拉伸應力或扭轉應力等之應力的回應所測定之 值,具體而言,係意指由實施例所記載之方法所測定之值。 Still, tan δ is called the loss tangent, and is defined as "loss elastic modulus/storage elastic modulus", which is determined by the dynamic viscoelasticity measuring device by the response to stress such as tensile stress or torsional stress given to the object Measured The value, specifically, means the value measured by the method described in the examples.

又,此緩衝層之tan δ的最大值不依賴上述之擠入深度(X)。 In addition, the maximum value of tan δ of this buffer layer does not depend on the above-mentioned penetration depth (X).

本發明之黏著薄片所具有之緩衝層,係由包 含能量線聚合性化合物之緩衝層形成用組成物形成而成之層。 The buffer layer of the adhesive sheet of the present invention is composed of The buffer layer containing the energy ray polymerizable compound is formed by the composition.

作為該緩衝層形成用組成物中所包含之能量線聚合性化合物,若為可形成將擠入深度(X)成為上述範圍之緩衝層的化合物,則並未特別限制,例如可使用光硬化性樹脂或單體等。 The energy ray polymerizable compound included in the composition for forming a buffer layer is not particularly limited as long as it can form a buffer layer having an extrusion depth (X) within the above range, for example, photocurable Resin or monomer, etc.

惟,從將擠入深度(X)調整成如上述之範圍的觀點來看,作為能量線聚合性化合物,較佳為包含胺基甲酸乙酯(甲基)丙烯酸酯(a1)、具有環形成原子數6~20之脂環基或雜環基之聚合性化合物(a2)、及具有官能基之聚合性化合物(a3)之緩衝層形成用組成物。 However, from the viewpoint of adjusting the squeeze depth (X) to the above range, as the energy ray polymerizable compound, it is preferable to include ethyl urethane (meth)acrylate (a1) and have a ring formation A composition for forming a buffer layer of a polymerizable compound (a2) of an alicyclic group or a heterocyclic group having 6 to 20 atoms, and a polymerizable compound (a3) having a functional group.

又,緩衝層形成用組成物較佳為含有光聚合起始劑,不損及本發明的效果的範圍中,亦可含有其他添加劑或樹脂成分。 In addition, the composition for forming a buffer layer preferably contains a photopolymerization initiator, and may contain other additives or resin components within a range that does not impair the effects of the present invention.

以下,針對緩衝層形成用組成物中所包含之各成分進行說明。 Hereinafter, each component included in the buffer layer forming composition will be described.

(胺基甲酸乙酯(甲基)丙烯酸酯(a1)) (Ethyl urethane (meth)acrylate (a1))

作為本發明所使用之胺基甲酸乙酯(甲基)丙烯酸酯 (a1),係至少具有(甲基)丙烯醯基及胺基甲酸乙酯鍵結之化合物,係具有藉由能量線照射進行聚合硬化之性質者。 Ethyl urethane (meth)acrylate used as the present invention (a1) is a compound having at least a (meth)acryloyl group and an urethane bond, and has a property of being polymerized and hardened by energy ray irradiation.

胺基甲酸乙酯(甲基)丙烯酸酯(a1)雖可為寡聚物、高分子量體、或此等之混合物之任一種,但較佳為胺基甲酸乙酯(甲基)丙烯酸酯寡聚物。 The urethane (meth)acrylate (a1) may be any of an oligomer, a high molecular weight body, or a mixture of these, but it is preferably an urethane (meth)acrylate oligomer Polymer.

成分(a1)之質量平均分子量(Mw)較佳為1,000 ~100,000,更佳為2,000~60,000,再更佳為3,000~20,000。 The mass average molecular weight (Mw) of the component (a1) is preferably 1,000 ~100,000, better 2,000~60,000, even better 3,000~20,000.

又,作為成分(a1)中之(甲基)丙烯醯基數(以下亦稱為「官能基數」),雖可為單官能、2官能、或是3官能以上,但較佳為單官能或2官能。 In addition, as the number of (meth)acryloyl groups (hereinafter also referred to as "number of functional groups") in the component (a1), although it may be monofunctional, bifunctional, or more than 3 functional, it is preferably monofunctional or 2 Functional.

成分(a1)例如可於使多元醇化合物、與多價異 氰酸酯化合物反應所得之末端異氰酸酯胺基甲酸乙酯預聚物,使具羥基之(甲基)丙烯酸酯進行反應而得到。 The component (a1) can be used, for example, to make the polyol compound different from polyvalent The terminal isocyanate urethane prepolymer obtained by the reaction of the cyanate compound is obtained by reacting (meth)acrylate having a hydroxyl group.

尚,成分(a1)可單獨或組合2種以上使用。 Still, the component (a1) can be used alone or in combination of two or more.

成為成分(a1)原料之多元醇化合物,若為具有2個以上羥基之化合物則並未特別限定。 The polyol compound that becomes the raw material of the component (a1) is not particularly limited if it is a compound having two or more hydroxyl groups.

作為具體的多元醇化合物,例如可列舉伸烷基二醇、聚醚型多元醇、聚酯型多元醇、聚碳酸酯型多元醇等。 Examples of specific polyol compounds include alkylene glycols, polyether polyols, polyester polyols, and polycarbonate polyols.

此等當中,較佳為聚酯型多元醇。 Among these, polyester polyols are preferred.

尚,作為多元醇化合物,雖可為2官能之二醇、3官能之三醇、4官能以上之多元醇中之任一種,但較佳為2官能之二醇,更佳為聚酯型二醇。 Still, as the polyol compound, although it may be any of a difunctional diol, a trifunctional triol, and a polyhydric alcohol of more than four functionalities, it is preferably a difunctional diol, and more preferably a polyester type two alcohol.

作為多價異氰酸酯化合物,例如可列舉四亞 甲基二異氰酸酯、六亞甲基二異氰酸酯、三甲基六亞甲基二異氰酸酯等之脂肪族系聚異氰酸酯類;異佛爾酮二異氰酸酯、降莰烷二異氰酸酯、二環己基甲烷-4,4’-二異氰酸酯、二環己基甲烷-2,4’-二異氰酸酯、ω,ω’-二異氰酸酯二甲基環己烷等之脂環族系二異氰酸酯類;4,4’-二苯基甲烷二異氰酸酯、甲伸苯基二異氰酸酯、苯二甲基二異氰酸酯、聯甲苯胺(Tolidine)二異氰酸酯、四亞甲基苯二甲基二異氰酸酯、萘-1,5-二異氰酸酯等之芳香族系二異氰酸酯類等。 Examples of polyvalent isocyanate compounds include Siya Aliphatic polyisocyanates such as methyl diisocyanate, hexamethylene diisocyanate, trimethylhexamethylene diisocyanate; isophorone diisocyanate, norbornane diisocyanate, dicyclohexylmethane-4, 4'-diisocyanate, dicyclohexylmethane-2,4'-diisocyanate, ω,ω'-diisocyanate dimethylcyclohexane and other alicyclic diisocyanates; 4,4'-diphenyl Aromatics such as methane diisocyanate, tolylene diisocyanate, xylylene diisocyanate, tolidine diisocyanate, tetramethylene xylylene diisocyanate, naphthalene-1,5-diisocyanate Department of diisocyanates and so on.

此等當中,較佳為異佛爾酮二異氰酸酯、六亞甲基二異氰酸酯、苯二甲基二異氰酸酯。 Among these, isophorone diisocyanate, hexamethylene diisocyanate, and xylylene diisocyanate are preferred.

於使上述之多元醇化合物、與多價異氰酸酯 化合物進行反應所得之末端異氰酸酯胺基甲酸乙酯預聚物,使具羥基之(甲基)丙烯酸酯進行反應可得到胺基甲酸乙酯(甲基)丙烯酸酯(a1)。 For the above-mentioned polyol compound, and polyvalent isocyanate The terminal isocyanate urethane prepolymer obtained by the reaction of the compound is reacted with a (meth)acrylate having a hydroxyl group to obtain urethane (meth)acrylate (a1).

作為具羥基之(甲基)丙烯酸酯,若為至少於1分子中具有羥基及(甲基)丙烯醯基之化合物,則並未特別限定。 As the (meth)acrylate having a hydroxyl group, if it is a compound having a hydroxyl group and a (meth)acryloyl group in at least one molecule, it is not particularly limited.

作為具有具體羥基之(甲基)丙烯酸酯,例如可 列舉2-羥乙基(甲基)丙烯酸酯、2-羥丙基(甲基)丙烯酸酯、4-羥丁基(甲基)丙烯酸酯、4-羥環己基(甲基)丙烯酸酯、5-羥環辛基(甲基)丙烯酸酯、2-羥基-3-苯基氧丙基(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、聚乙二醇單(甲基)丙烯酸酯、聚丙二醇單(甲基)丙烯酸酯等之羥烷基(甲基)丙烯酸酯;N-羥甲基(甲基)丙烯醯胺等之含有羥基 之(甲基)丙烯醯胺;於乙烯醇、乙烯基酚、雙酚A之二縮水甘油基酯與(甲基)丙烯酸反應所得之反應物等。 As the (meth)acrylate having a specific hydroxyl group, for example, List 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 4-hydroxycyclohexyl (meth)acrylate, 5 -Hydroxycyclooctyl (meth)acrylate, 2-hydroxy-3-phenyloxypropyl (meth)acrylate, pentaerythritol tri(meth)acrylate, polyethylene glycol mono(meth)acrylate , Hydroxyalkyl (meth)acrylates such as polypropylene glycol mono(meth)acrylate; N-hydroxymethyl (meth)acrylamide and other containing hydroxyl groups (Meth) acrylamide; reactants obtained by reacting diglycidyl ester of vinyl alcohol, vinyl phenol, bisphenol A with (meth) acrylic acid, etc.

此等當中,較佳為羥烷基(甲基)丙烯酸酯,更佳為2-羥乙基(甲基)丙烯酸酯。 Among these, hydroxyalkyl (meth)acrylate is preferable, and 2-hydroxyethyl (meth)acrylate is more preferable.

作為使末端異氰酸酯胺基甲酸乙酯預聚物及 具羥基之(甲基)丙烯酸酯進行反應之條件,以如有必要所添加之溶劑、觸媒的存在下、於60~100℃下反應1~4小時的條件較佳。 As a terminal isocyanate urethane prepolymer and The conditions for the reaction of (meth)acrylic acid esters with hydroxyl groups are preferably such that the reaction is carried out at 60 to 100°C for 1 to 4 hours in the presence of a solvent and a catalyst added if necessary.

緩衝層形成用組成物中之成分(a1)的含量,從 形成擠入深度(X)成為上述之範圍之緩衝層的觀點來看,相對於緩衝層形成用組成物的全量(100質量%),較佳為10~70質量%,更佳為20~60質量%,再更佳為25~55質量%,又再更佳為30~50質量%。 The content of the component (a1) in the composition for buffer layer formation is from From the viewpoint of forming a buffer layer having a penetration depth (X) within the above range, it is preferably 10 to 70% by mass, and more preferably 20 to 60 relative to the total amount (100% by mass) of the buffer layer forming composition The mass% is even better at 25~55 mass%, and still better at 30~50 mass%.

(具有環形成原子數6~20之脂環基或雜環基之聚合性化合物(a2)) (Polymer compound (a2) having an alicyclic group or heterocyclic group having 6 to 20 ring-forming atoms)

本發明所使用之成分(a2),較佳為具有環形成原子數6~20之脂環基或雜環基之聚合性化合物,至少具有1個(甲基)丙烯醯基之化合物。藉由使用此成分(a2),可提昇所得之緩衝層形成用組成物的成膜性。 The component (a2) used in the present invention is preferably a polymerizable compound having an alicyclic group or a heterocyclic group having 6 to 20 ring forming atoms, and a compound having at least one (meth)acryloyl group. By using this component (a2), the film-forming property of the resulting composition for forming a buffer layer can be improved.

成分(a2)所具有之脂環基或雜環基之環形成原子數,較佳雖為6~20,但更佳為6~18,再更佳為6~16,又再更佳為7~12。 The number of ring-forming atoms of the alicyclic group or heterocyclic group possessed by the component (a2) is preferably 6-20, but more preferably 6-18, even more preferably 6-16, and even more preferably 7 ~12.

作為形成該雜環基之環構造的原子,例如可列舉碳原 子、氮原子、氧原子、硫原子等。 Examples of the atoms forming the ring structure of the heterocyclic group include carbon Son, nitrogen atom, oxygen atom, sulfur atom, etc.

尚,本發明中,所謂環形成原子數,係表示原子鍵結成環狀之構造的化合物之構成該環本身之原子的數,不構成環之原子(例如與構成環之原子鍵結之氫原子)、或該環藉由取代基取代時之取代基所包含之原子,未包含在環形成原子數中。 Still, in the present invention, the number of ring-forming atoms refers to the number of atoms constituting the ring itself of the compound in which the atoms are bonded into a ring structure, and atoms that do not constitute a ring (such as hydrogen atoms bonded to atoms constituting the ring) ), or the atoms included in the substituent when the ring is substituted with a substituent, are not included in the number of ring-forming atoms.

作為具體的成分(a2),例如可列舉異莰基(甲 基)丙烯酸酯、二環戊烯基(甲基)丙烯酸酯、二環戊基(甲基)丙烯酸酯、二環戊烯氧基(甲基)丙烯酸酯、環己基(甲基)丙烯酸酯、金剛烷(甲基)丙烯酸酯等之含脂環基之(甲基)丙烯酸酯;四氫糠基(甲基)丙烯酸酯、嗎啉(甲基)丙烯酸酯等之雜環基含有(甲基)丙烯酸酯;等。 As a specific component (a2), for example, isobornyl (method Group) acrylate, dicyclopentenyl (meth)acrylate, dicyclopentyl (meth)acrylate, dicyclopentenyloxy (meth)acrylate, cyclohexyl (meth)acrylate, Aliphatic group-containing (meth)acrylates such as adamantane (meth)acrylate; heterocyclic groups such as tetrahydrofurfuryl (meth)acrylate, morpholine (meth)acrylate, etc. ) Acrylate; etc.

尚,成分(a2)可單獨或組合2種以上使用。 Still, the component (a2) can be used alone or in combination of two or more.

此等當中,較佳為含脂環基之(甲基)丙烯酸酯,更佳為異莰基(甲基)丙烯酸酯。 Among these, (meth)acrylates containing an alicyclic group are preferred, and isobornyl (meth)acrylates are more preferred.

緩衝層形成用組成物中之成分(a2)的含量,從 形成擠入深度(X)成為上述範圍之緩衝層的觀點、及提昇所得之緩衝層形成用組成物的成膜性的觀點來看,相對於緩衝層形成用組成物的全量(100質量%),較佳為10~70質量%,更佳為20~60質量%,再更佳為25~55質量%,又再更佳為30~50質量%。 The content of the component (a2) in the composition for buffer layer formation is from From the viewpoint of forming the buffer layer having the indentation depth (X) within the above range, and from the viewpoint of improving the film-forming properties of the resulting buffer layer forming composition, the total amount (100% by mass) relative to the buffer layer forming composition It is preferably 10 to 70% by mass, more preferably 20 to 60% by mass, even more preferably 25 to 55% by mass, and still more preferably 30 to 50% by mass.

(具有官能基之聚合性化合物(a3)) (Polymeric compound with functional group (a3))

本發明所使用之成分(a3)係含有羥基、環氧基、醯胺 基、胺基等官能基之聚合性化合物,較佳為具有至少1個(甲基)丙烯醯基之化合物。 The component (a3) used in the present invention contains a hydroxyl group, an epoxy group, and an amide The polymerizable compound having a functional group such as a group and an amine group is preferably a compound having at least one (meth)acryloyl group.

成分(a3)係與成分(a1)的相溶性良好,可將緩衝層形成用組成物的黏度調整至適度範圍,亦可將由該組成物形成之緩衝層的彈性率調整至適度範圍。因此,藉由使用此成分(a3),可形成擠入深度(X)成為上述範圍之緩衝層。 The component (a3) has good compatibility with the component (a1), and the viscosity of the composition for forming a buffer layer can be adjusted to an appropriate range, and the elastic modulus of the buffer layer formed of the composition can also be adjusted to an appropriate range. Therefore, by using this component (a3), a buffer layer having a squeezing depth (X) within the above range can be formed.

作為成分(a3),例如可列舉含羥基之(甲基)丙烯酸酯、含環氧基之(甲基)丙烯酸酯、含醯胺基之化合物、含胺基之(甲基)丙烯酸酯等。 Examples of the component (a3) include hydroxyl-containing (meth)acrylates, epoxy-containing (meth)acrylates, amide group-containing compounds, and amine group-containing (meth)acrylates.

作為含羥基之(甲基)丙烯酸酯,例如可列舉 2-羥乙基(甲基)丙烯酸酯、2-羥丙基(甲基)丙烯酸酯、3-羥丙基(甲基)丙烯酸酯、2-羥丁基(甲基)丙烯酸酯、3-羥丁基(甲基)丙烯酸酯、4-羥丁基(甲基)丙烯酸酯、苯基羥丙基(甲基)丙烯酸酯等。 Examples of hydroxyl-containing (meth)acrylates include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3- Hydroxybutyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, phenylhydroxypropyl (meth)acrylate, etc.

作為含環氧基之(甲基)丙烯酸酯,例如可列舉縮水甘油基(甲基)丙烯酸酯、甲基縮水甘油基(甲基)丙烯酸酯、烯丙基縮水甘油基醚等。 Examples of epoxy group-containing (meth)acrylates include glycidyl (meth)acrylate, methylglycidyl (meth)acrylate, and allyl glycidyl ether.

作為含醯胺基之化合物,例如可列舉(甲基)丙烯醯胺、N,N-二甲基(甲基)丙烯醯胺、N-丁基(甲基)丙烯醯胺、N-羥甲基(甲基)丙烯醯胺、N-羥甲基丙烷(甲基)丙烯醯胺、N-甲氧基甲基(甲基)丙烯醯胺、N-丁氧基甲基(甲基)丙烯醯胺等。 Examples of the compound containing an amide group include (meth)acrylamide, N,N-dimethyl(meth)acrylamide, N-butyl(meth)acrylamide, and N-hydroxymethyl (Meth)acrylamide, N-methylolpropane (meth)acrylamide, N-methoxymethyl (meth)acrylamide, N-butoxymethyl (meth)acryl Acylamine, etc.

作為含胺基之(甲基)丙烯酸酯,例如可列舉含第1級胺基之(甲基)丙烯酸酯、含第2級胺基之(甲基)丙烯酸 酯、含第3級胺基之(甲基)丙烯酸酯等。 Examples of the amine group-containing (meth)acrylate include, for example, a (meth)acrylate containing a first-stage amine group, and a (meth)acrylic acid containing a second-stage amine group. Ester, (meth)acrylic acid esters containing third-level amine groups, etc.

尚,成分(a3)可單獨或組合2種以上使用。 Still, the component (a3) can be used alone or in combination of two or more.

此等當中,從形成擠入深度(X)成為上述範圍 之緩衝層的觀點來看,較佳為含羥基之(甲基)丙烯酸酯,更佳為苯基羥丙基(甲基)丙烯酸酯等之具有芳香環之含羥基之(甲基)丙烯酸酯。 Among these, the formation depth (X) becomes the above range From the viewpoint of the buffer layer, the hydroxyl group-containing (meth)acrylate is preferable, and the hydroxyl group-containing (meth)acrylate having an aromatic ring such as phenylhydroxypropyl (meth)acrylate is more preferable. .

緩衝層形成用組成物中之成分(a3)的含量,從 形成擠入深度(X)成為上述範圍之緩衝層的觀點、及提昇所得之緩衝層形成用組成物的成膜性的觀點來看,相對於緩衝層形成用組成物的全量(100質量%),較佳為5~40質量%,更佳為7~35質量%,再更佳為10~30質量%,又再更佳為13~25質量%。 The content of the component (a3) in the buffer layer forming composition is from From the viewpoint of forming the buffer layer having the indentation depth (X) within the above range, and from the viewpoint of improving the film-forming properties of the resulting buffer layer forming composition, the total amount (100% by mass) relative to the buffer layer forming composition It is preferably 5 to 40% by mass, more preferably 7 to 35% by mass, even more preferably 10 to 30% by mass, and still more preferably 13 to 25% by mass.

又,緩衝層形成用組成物中之成分(a2)與成分(a3)的含量比〔(a2)/(a3)〕,較佳為0.5~3.0,更佳為1.0~3.0,再更佳為1.3~3.0,又再更佳為1.5~2.8。 Moreover, the content ratio of the component (a2) to the component (a3) in the composition for buffer layer formation [(a2)/(a3)] is preferably 0.5 to 3.0, more preferably 1.0 to 3.0, and even more preferably 1.3~3.0, and even better is 1.5~2.8.

若該含量比為0.5以上,可使所得之緩衝層形成用組成物的成膜性變為良好。另外,若該含量比為3.0以下,可形成擠入深度(X)成為上述範圍之緩衝層。 If the content ratio is 0.5 or more, the resulting buffer layer forming composition can have good film-forming properties. In addition, if the content ratio is 3.0 or less, a buffer layer having a penetration depth (X) within the above range can be formed.

(成分(a1)~(a3)以外之聚合性化合物) (Polymerizable compounds other than components (a1) to (a3))

緩衝層形成用組成物中,不損及本發明的效果的範圍中,可含有上述之成分(a1)~(a3)以外之其他聚合性化合物。 The buffer layer forming composition may contain other polymerizable compounds other than the above-mentioned components (a1) to (a3) in a range that does not impair the effects of the present invention.

作為其他聚合性化合物,例如可列舉具有碳數1~20 之烷基之(甲基)丙烯酸烷酯;苯乙烯、羥乙基乙烯基醚、羥丁基乙烯基醚、N-乙烯基甲醯胺、N-乙烯基吡咯烷酮、N-乙烯基己內醯胺等之乙烯基化合物:等。 Examples of other polymerizable compounds include carbon atoms having 1 to 20 Alkyl (meth)acrylates of alkyl; styrene, hydroxyethyl vinyl ether, hydroxybutyl vinyl ether, N-vinylformamide, N-vinylpyrrolidone, N-vinylcaprolactam Vinyl compounds such as amines: etc.

尚,此等之其他聚合性化合物可單獨或組合2種以上使用。 Still, these other polymerizable compounds can be used alone or in combination of two or more.

緩衝層形成用組成物中之其他聚合性化合物 的含量,較佳為0~20質量%,更佳為0~10質量%,再更佳為0~5質量%,又再更佳為0~2質量%。 Other polymerizable compounds in the composition for forming the buffer layer The content of is preferably 0-20% by mass, more preferably 0-10% by mass, even more preferably 0-5% by mass, and still more preferably 0-2% by mass.

(光聚合起始劑) (Photopolymerization initiator)

緩衝層形成用組成物中,形成緩衝層時,從藉由光照射短縮聚合時間及減低光照射量的觀點來看,以進一步含有光聚合起始劑較佳。 In the composition for forming a buffer layer, when the buffer layer is formed, it is preferable to further contain a photopolymerization initiator from the viewpoint of shortening the polymerization time by light irradiation and reducing the light irradiation amount.

作為光聚合起始劑,例如可列舉安息香化合物、苯乙酮化合物、醯基氧化膦(Acyl phosphinoxide)化合物、茂鈦化合物、硫雜蒽酮化合物、過氧化物化合物等之光聚合起始劑、胺或醌等之光敏劑等,更具體而言,例如可列舉1-羥環己基苯基酮、2-羥基-2-甲基-1-苯基-丙烷-1-酮、安息香、安息香甲基醚、安息香乙基醚、安息香異丙基醚等。 Examples of the photopolymerization initiator include photopolymerization initiators such as benzoin compounds, acetophenone compounds, acyl phosphinoxide compounds, titanocene compounds, thioxanthone compounds, and peroxide compounds. Photosensitizers such as amines and quinones, more specifically, for example, 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, benzoin, benzoin Ether, benzoin ethyl ether, benzoin isopropyl ether, etc.

此等之光聚合起始劑可單獨或組合2種以上使用。 These photopolymerization initiators can be used alone or in combination of two or more.

緩衝層形成用組成物中之光聚合起始劑的含 量,相對於能量線聚合性化合物的合計量100質量份,較佳為0.05~15質量份,更佳為0.1~10質量份,再更佳為0.3~5質量份。 The content of the photopolymerization initiator in the composition for forming the buffer layer The amount is preferably 0.05 to 15 parts by mass, more preferably 0.1 to 10 parts by mass, and even more preferably 0.3 to 5 parts by mass relative to 100 parts by mass of the total energy ray polymerizable compound.

(其他添加劑) (Other additives)

緩衝層形成用組成物中,不損及本發明的效果的範圍中,可含有其他添加劑。 The buffer layer-forming composition may contain other additives within a range that does not impair the effects of the present invention.

作為其他添加劑,例如可列舉抗氧化劑、軟化劑(可塑劑)、填充劑、防銹劑、顏料、染料等。 Examples of other additives include antioxidants, softeners (plasticizers), fillers, rust inhibitors, pigments, and dyes.

摻合此等之添加劑時,緩衝層形成用組成物中之各添加劑的含量,相對於能量線聚合性化合物的合計量100質量份,較佳為0.01~6質量份,更佳為0.1~3質量份。 When these additives are blended, the content of each additive in the buffer layer forming composition is preferably 0.01 to 6 parts by mass, more preferably 0.1 to 3, relative to 100 parts by mass of the total energy ray polymerizable compound. Quality parts.

(樹脂成分) (Resin component)

緩衝層形成用組成物中,不損及本發明的效果的範圍中,可含有樹脂成分。 The buffer layer-forming composition may contain a resin component within a range that does not impair the effects of the present invention.

作為樹脂成分,例如可列舉多烯硫醇系樹脂、或聚丁烯、聚丁二烯、聚甲基戊烯等之聚烯烴系樹脂、及苯乙烯系共聚物等之熱可塑性樹脂等。 Examples of the resin component include polyene thiol resins, polyolefin resins such as polybutene, polybutadiene, and polymethylpentene, and thermoplastic resins such as styrene copolymers.

緩衝層形成用組成物中之此等之樹脂成分的含量較佳為0~20質量%,更佳為0~10質量%,再更佳為0~5質量%,又再更佳為0~2質量%。 The content of these resin components in the buffer layer forming composition is preferably 0 to 20% by mass, more preferably 0 to 10% by mass, even more preferably 0 to 5% by mass, and still more preferably 0 to 2% by mass.

<黏著劑層> <adhesive layer>

作為形成本發明之黏著薄片所具有之黏著劑層的黏著劑,相對於半導體晶圓等之被著體,若為有適度再剝離性之黏著劑,則其黏著劑的種類並未限定。 As the adhesive that forms the adhesive layer of the adhesive sheet of the present invention, the type of the adhesive is not limited if it is a moderately releasable adhesive with respect to an object such as a semiconductor wafer.

作為如此之黏著劑,例如可列舉丙烯酸系黏著劑、胺基甲酸乙酯系黏著劑、矽酮系黏著劑、橡膠系黏著劑、聚酯系黏著劑、能量線硬化型黏著劑、加熱發泡型黏著劑、水膨潤型黏著劑等。 Examples of such adhesives include acrylic adhesives, urethane adhesives, silicone adhesives, rubber adhesives, polyester adhesives, energy ray-curable adhesives, and heating foams. Type adhesive, water swelling type adhesive, etc.

此等之黏著劑可單獨或組合2種以上使用。 These adhesives can be used alone or in combination of two or more.

尚,作為能量線硬化型黏著劑,例如可列舉 日本特開昭60-196956號公報、日本特開昭60-223139號公報等所記載之黏著劑,較佳為紫外線硬化型黏著劑。 Still, as an energy ray-curable adhesive, for example, The adhesive described in Japanese Patent Laid-Open No. 60-196956, Japanese Patent Laid-Open No. 60-223139, etc. is preferably an ultraviolet curing adhesive.

作為此等之黏著劑所包含之樹脂的質量平均分子量(Mw),較佳為2萬~150萬,更佳為5萬~120萬,再更佳為10萬~100萬。 The mass average molecular weight (Mw) of the resin contained in these adhesives is preferably 20,000 to 1.5 million, more preferably 50,000 to 1.2 million, and still more preferably 100,000 to 1 million.

又,此等之黏著劑中如有必要,可含有能量線硬化型樹脂、硬化劑、交聯劑、光聚合起始劑、抗氧化劑、軟化劑(可塑劑)、填充劑、防銹劑、顏料、染料等。 In addition, if necessary, these adhesives may contain energy ray-curable resins, hardeners, crosslinking agents, photopolymerization initiators, antioxidants, softeners (plasticizers), fillers, rust inhibitors, Pigments, dyes, etc.

黏著劑層的厚度雖可因成為被著體之半導體 晶圓之凸塊的形狀、表面狀態及研磨方法等之條件而適當設定,但較佳為5~500μm,更佳為10~300μm,再更佳為15~100μm。 Although the thickness of the adhesive layer can be the semiconductor The conditions of the shape, surface condition and polishing method of the bumps of the wafer are appropriately set, but it is preferably 5 to 500 μm, more preferably 10 to 300 μm, and still more preferably 15 to 100 μm.

<易接著層> <easy adhesion layer>

本發明之黏著薄片,從提昇剛性基材與緩衝層及/或黏著劑層的密著性的觀點來看,可於剛性基材與緩衝層之間、及剛性基材與黏著劑層之間之至少一側設置易接著層。 The adhesive sheet of the present invention can be used between the rigid substrate and the buffer layer, and between the rigid substrate and the adhesive layer from the viewpoint of improving the adhesion between the rigid substrate and the buffer layer and/or the adhesive layer At least one side is provided with an easy adhesion layer.

作為形成易接著層之易接著層形成用組成物,雖並未特別限定,但例如可列舉包含聚酯系樹脂、胺基甲酸乙酯系樹脂、聚酯胺基甲酸乙酯系樹脂、丙烯酸系樹脂等之組成物。 The composition for forming an easy-adhesive layer for forming an easy-adhesive layer is not particularly limited, but examples thereof include polyester resins, urethane resins, polyester urethane resins, and acrylic resins. Resin and other components.

尚,該易接著層形成用組成物中如有必要,可含有交聯劑、光聚合起始劑、抗氧化劑、軟化劑(可塑劑)、填充劑、防銹劑、顏料、染料等。 In addition, if necessary, the composition for forming an easy-adhesive layer may contain a crosslinking agent, a photopolymerization initiator, an antioxidant, a softener (plasticizer), a filler, a rust inhibitor, a pigment, a dye, and the like.

作為易接著層的厚度,較佳為0.01~10μm,更佳為0.03~5μm。 The thickness of the easy-adhesion layer is preferably 0.01 to 10 μm, and more preferably 0.03 to 5 μm.

尚,易接著層的厚度,由於相對於剛性基材的厚度較小,材質亦較柔軟,故設置易接著層之剛性基材的楊氏模量、與未設置易接著層之僅該剛性基材的楊氏模量的差,係極為小。 Still, the thickness of the easy-adhesive layer is smaller than that of the rigid substrate, and the material is also softer. Therefore, the Young's modulus of the rigid substrate with the easy-adhesive layer and the rigid substrate without the easy-adhesive layer The difference in Young's modulus of the material is extremely small.

因此,本發明中,認為「設置易接著層之剛性基材的楊氏模量」=「剛性基材的楊氏模量」。 Therefore, in the present invention, "Young's modulus of a rigid substrate provided with an easy-adhesion layer" = "Young's modulus of a rigid substrate" is considered.

<剝離薄片> <peel sheet>

作為本發明所使用之剝離薄片,可列舉使用兩面經剝離處理之剝離薄片、或單面經剝離處理之剝離薄片等,塗佈剝離劑於剝離薄片用基材的表面上者等。 Examples of the peeling sheet used in the present invention include a peeling sheet that is peeled on both sides, a peeling sheet that is peeled on one side, and the like, and a peeling agent is applied to the surface of the substrate for peeling sheets.

作為剝離薄片用基材,較佳為樹脂薄膜,作為構成該樹脂薄膜之樹脂,例如可列舉聚對苯二甲酸乙二酯樹脂、聚對苯二甲酸丁二酯樹脂、聚萘二甲酸乙二酯樹脂等之聚酯樹脂薄膜、聚丙烯樹脂、聚乙烯樹脂等之聚烯烴樹脂 等。 The substrate for the release sheet is preferably a resin film. Examples of the resin constituting the resin film include polyethylene terephthalate resin, polybutylene terephthalate resin, and polyethylene naphthalate. Polyester resin film such as polyester resin, polypropylene resin, polyethylene resin, etc. Wait.

作為剝離劑,例如可列舉矽酮系樹脂、烯烴系樹脂、異戊二烯系樹脂、丁二烯系樹脂等之橡膠系彈性體、長鏈烷基系樹脂、醇酸系樹脂、氟系樹脂等。 Examples of the release agent include rubber-based elastomers such as silicone-based resins, olefin-based resins, isoprene-based resins, butadiene-based resins, long-chain alkyl-based resins, alkyd-based resins, and fluorine-based resins Wait.

剝離薄片的厚度雖並未特別限制,但較佳為10~200μm,更佳為20~150μm。 Although the thickness of the peeling sheet is not particularly limited, it is preferably 10 to 200 μm, and more preferably 20 to 150 μm.

〔黏著薄片的製造方法〕 [Manufacturing method of adhesive sheet]

作為本發明之黏著薄片的製造方法,並未特別限制,可由周知之方法製造。 The manufacturing method of the adhesive sheet of the present invention is not particularly limited, and can be manufactured by a well-known method.

例如於剛性基材的表面上,若能貼合設置於剝離薄片上之緩衝層、與設置於剝離薄片上之黏著劑層,可製造圖1(b)所示之黏著薄片1b。 For example, if the buffer layer provided on the release sheet and the adhesive layer provided on the release sheet can be bonded to the surface of the rigid substrate, the adhesive sheet 1b shown in FIG. 1(b) can be manufactured.

又,若能從圖1(b)所示之黏著薄片1b,去除2片剝離薄片,可成為圖1(a)所示之黏著薄片1a。 Moreover, if two peeling sheets can be removed from the adhesive sheet 1b shown in FIG. 1(b), the adhesive sheet 1a shown in FIG. 1(a) can be obtained.

進而,於所用之剛性基材的表面,預先形成易接著層後,若能貼合設置於剝離薄片上之緩衝層、與設置於剝離薄片上之黏著劑層,可製造圖1(a)所示之黏著薄片1c。 Furthermore, after forming an easy-adhesion layer on the surface of the rigid substrate used in advance, if the buffer layer provided on the release sheet and the adhesive layer provided on the release sheet can be bonded together, it can be manufactured as shown in FIG. 1(a)示的粘片1c。 The adhesive sheet 1c.

作為於剝離薄片上形成緩衝層或黏著劑層之 方法,可藉由將緩衝層形成用組成物或黏著劑用周知之塗佈方法,直接塗佈形成塗佈膜,將此塗佈膜乾燥及/或照射能量線,可形成緩衝層或黏著劑層於剝離薄片上。 As a buffer layer or adhesive layer formed on the release sheet It is possible to form a buffer layer or an adhesive by directly applying a composition for forming a buffer layer or an adhesive using a well-known coating method to form a coating film, drying the coating film and/or irradiating energy rays Layer on the peeling sheet.

作為塗佈方法,例如可列舉旋塗法、噴塗法、棒塗法、刀塗法、輥塗法、刮塗法、模塗法、凹版塗佈法等。 Examples of the coating method include a spin coating method, a spray coating method, a bar coating method, a knife coating method, a roll coating method, a blade coating method, a die coating method, and a gravure coating method.

又,為了提昇塗佈性,對於緩衝層形成用組 成物或黏著劑,摻合有機溶劑,作為溶液的形態,可塗佈於剝離薄片上。 In addition, in order to improve the applicability, the buffer layer forming group The finished product or adhesive, blended with organic solvents, can be applied to the release sheet as a solution.

作為所使用之有機溶劑,例如可列舉甲基乙基酮、丙酮、乙酸乙酯、四氫呋喃、二噁烷、環己烷、n-己烷、甲苯、二甲苯、n-丙醇、異丙醇等。 Examples of the organic solvent used include methyl ethyl ketone, acetone, ethyl acetate, tetrahydrofuran, dioxane, cyclohexane, n-hexane, toluene, xylene, n-propanol, and isopropanol. Wait.

尚,此等之有機溶劑可直接使用組成物中所包含之各成分的合成時所使用之有機溶劑,亦可加入其以外之1種以上的有機溶劑。 Still, these organic solvents may directly use the organic solvents used in the synthesis of the components contained in the composition, or may add one or more organic solvents other than these.

形成塗佈膜之緩衝層形成用組成物由於包含 能量線聚合性化合物,相對於該塗佈膜,藉由照射能量線使其硬化,可形成緩衝層。 The composition for forming a buffer layer for forming a coating film contains The energy ray polymerizable compound can form a buffer layer by irradiating the energy film with the energy ray to harden it.

硬化處理可一次使其完全硬化,亦可分成複數次使其硬化。亦即,可使剝離薄片上之塗佈膜完全硬化形成緩衝層後,貼合於剛性基材,該塗佈膜未完全硬化,形成半硬化狀態之緩衝層形成膜,可將該緩衝層形成膜貼合於剛性基材後,再度照射能量線,使其完全硬化形成緩衝層。 The hardening treatment can completely harden it once, or it can be divided into multiple times to harden it. That is, after the coating film on the peeling sheet is completely cured to form a buffer layer, it is attached to a rigid substrate, the coating film is not completely cured, and a semi-hardened buffer layer forming film is formed, and the buffer layer can be formed After the film is attached to the rigid substrate, the energy beam is irradiated again to completely harden it to form a buffer layer.

作為於該硬化處理照射之能量線,較佳為紫 外線。 As the energy ray irradiated by the hardening treatment, purple is preferred Outside.

能量線的照射量,可因能量線的種類適當變更。例如使用紫外線時,所照射之紫外線的照度較佳為50~500mW/cm2,更佳為100~340mW/cm2,紫外線的照射量較佳為80~2500mJ/cm2,更佳為100~2000mJ/cm2The irradiation amount of energy rays can be appropriately changed according to the type of energy rays. For example, when using ultraviolet rays, the illuminance of the irradiated ultraviolet rays is preferably 50 to 500 mW/cm 2 , more preferably 100 to 340 mW/cm 2 , and the irradiation amount of ultraviolet rays is preferably 80 to 2500 mJ/cm 2 , more preferably 100 to 2000mJ/cm 2 .

本發明之黏著薄片係於研削完成晶圓的製造 時,適合作為保護晶圓的表面側之BG薄片。 The adhesive sheet of the present invention is used in grinding to complete the manufacture of wafers In this case, it is suitable as a BG sheet for protecting the surface side of the wafer.

作為使用本發明之黏著薄片之研削完成晶圓的製造方法,例如較佳為具有下述之步驟(1A)~(3A)之研削完成晶圓的製造方法。 As a method of manufacturing a ground-finished wafer using the adhesive sheet of the present invention, for example, a method of manufacturing a ground-finished wafer having the following steps (1A) to (3A) is preferable.

步驟(1A):貼附本發明之黏著薄片之黏著劑層於晶圓的表面側,而得到附緩衝層之晶圓之步驟 Step (1A): the step of attaching the adhesive layer of the adhesive sheet of the present invention to the surface side of the wafer to obtain a wafer with a buffer layer

步驟(2A):載置於步驟(1A)所得之附緩衝層之晶圓的緩衝層於研削機之夾頭座上之步驟 Step (2A): the step of placing the buffer layer of the wafer with buffer layer obtained in step (1A) on the chuck base of the grinder

步驟(3A):研削未設置附緩衝層之晶圓的緩衝層之晶圓的內側,而得到研削完成晶圓之步驟 Step (3A): grinding the inside of the wafer without the buffer layer of the wafer with the buffer layer, and obtaining the step of grinding the completed wafer

本發明之黏著薄片係異物吸附性優異。因此,在上述研削完成晶圓的製造方法之步驟(2A),即使附著異物於夾頭座上,該緩衝層吸收該異物的厚度,可抑制該異物的存在變成原因之晶圓內面的溶脹。 The adhesive sheet of the present invention is excellent in foreign substance adsorption. Therefore, in the step (2A) of the wafer manufacturing method of the above grinding, even if a foreign object is attached to the chuck base, the buffer layer absorbs the thickness of the foreign object, which can suppress the swelling of the inner surface of the wafer that causes the presence of the foreign object .

其結果,根據上述製造方法,可防止因該異物的存在所產生的原因之由於切削加工造成晶圓的破裂,可製造良品率高、薄膜經研削完成之晶圓。 As a result, according to the above-described manufacturing method, it is possible to prevent the cracking of the wafer due to the cutting process due to the presence of the foreign substance, and it is possible to manufacture a wafer with a high yield and a thin film after grinding.

又,本發明之黏著薄片亦適合作為使用在藉 由先切割法之半導體晶片的製造方法之BG薄片。 In addition, the adhesive sheet of the present invention is also suitable for use The BG sheet of the semiconductor wafer manufacturing method by the first dicing method.

作為使用本發明之黏著薄片之半導體晶片的製造方法,例如較佳為具有下述步驟(1B)~(3B)之半導體晶片的製造方法。 As a method of manufacturing a semiconductor wafer using the adhesive sheet of the present invention, for example, a method of manufacturing a semiconductor wafer having the following steps (1B) to (3B) is preferable.

步驟(1B):於表面,貼附本發明之黏著薄片的黏著劑層於特定深度之溝以特定之配置所設置之晶圓的該表面側 而得到附緩衝層之晶圓之步驟 Step (1B): On the surface, the adhesive layer of the adhesive sheet of the present invention is attached to the surface side of the wafer provided with a specific configuration in a groove of a specific depth And the steps to get the wafer with buffer layer

步驟(2B):載置於步驟(1B)所得之附緩衝層之晶圓的緩衝層於研削機之夾頭座上之步驟 Step (2B): the step of placing the buffer layer of the wafer with buffer layer obtained in step (1B) on the chuck base of the grinder

步驟(3B):將未設置附緩衝層之晶圓的緩衝層之晶圓的內側研削至成為特定的厚度為止,分割成各個晶片之步驟 Step (3B): The step of grinding the inside of the wafer without the buffer layer to a specific thickness and dividing it into individual wafers

如上述,本發明之黏著薄片所具有之緩衝層由於異物吸附性優異,可防止附著於夾頭座上之異物成為原因之由於切削加工造成晶圓的破裂。其結果,根據上述製造方法,可製造良品率高、薄膜之半導體晶片。 As described above, the buffer layer included in the adhesive sheet of the present invention is excellent in foreign matter adsorption, and can prevent the foreign matter adhering to the chuck base from being broken due to cutting due to cutting. As a result, according to the above-mentioned manufacturing method, a semiconductor wafer with a high yield and a thin film can be manufactured.

[實施例] [Example]

於以下之實施例及比較例所用之各成分的質量平均分子量(Mw)、及剛性基材的楊氏模量,係使用藉由以下所記載之方法測定之值。 The mass average molecular weight (Mw) of each component used in the following examples and comparative examples, and the Young's modulus of the rigid substrate are the values measured by the methods described below.

<質量平均分子量(Mw)> <Mass average molecular weight (Mw)>

使用凝膠滲透層析裝置(東曹股份有限公司製、製品名「HLC-8020」),以下述之條件下測定,使用在標準聚苯乙烯換算所測定之值。 Using a gel permeation chromatography apparatus (manufactured by Tosoh Corporation, product name "HLC-8020"), the measurement was performed under the following conditions, and the value measured in standard polystyrene conversion was used.

(測定條件) (Measurement conditions)

.管柱:「TSK guard column HXL-H」「TSK gel GMHXL(×2)」「TSK gel G2000HXL」(皆東曹股份有限公司製) . Column: "TSK guard column HXL-H" "TSK gel GMHXL (×2)" "TSK gel G2000HXL" (all made by Tosoh Corporation)

.管柱溫度:40℃ . Column temperature: 40℃

.展開溶劑:四氫呋喃 . Expand solvent: Tetrahydrofuran

.流速:1.0mL/min . Flow rate: 1.0mL/min

<剛性基材之楊氏模量> <Young's modulus of rigid substrate>

剛性基材之楊氏模量係使用拉力試驗機進行拉伸試驗,從所得之拉伸強度與延伸之圖表算出。具體而言,將於製造例3製作之兩面附易接著層之PET薄膜切成寬15mm×長度150mm的大小,以可拉延部位成為100mm的方式,設置在拉伸.壓縮試驗機(A & D公司製、製品名「Tensilon」)。而且以試驗速度200mm/分鐘進行測定,從在所得之圖表之原點的斜率算出楊氏模量。 The Young's modulus of the rigid substrate is subjected to a tensile test using a tensile tester, and is calculated from the obtained graph of tensile strength and elongation. Specifically, the PET film with an easy-adhesive layer on both sides produced in Manufacturing Example 3 was cut into a size of 15 mm in width × 150 mm in length, and stretched so that the stretchable portion became 100 mm. Compression testing machine (manufactured by A & D, product name "Tensilon"). The measurement was performed at a test speed of 200 mm/min, and the Young's modulus was calculated from the slope at the origin of the obtained graph.

製造例1 Manufacturing Example 1 (胺基甲酸乙酯丙烯酸酯系寡聚物(UA-1)之合成) (Synthesis of urethane acrylate oligomer (UA-1))

於使聚酯二醇、與異佛爾酮二異氰酸酯進行反應所得之末端異氰酸酯胺基甲酸乙酯預聚物,使2-羥乙基丙烯酸酯進行反應,而得到質量平均分子量(Mw)5000之2官能胺基甲酸乙酯丙烯酸酯系寡聚物(UA-1)。 The terminal isocyanate urethane prepolymer obtained by reacting polyester diol and isophorone diisocyanate is reacted with 2-hydroxyethyl acrylate to obtain a mass average molecular weight (Mw) of 5000 2-functional urethane acrylate oligomer (UA-1).

製造例2 Manufacturing Example 2 (附黏著劑層之剝離薄片的製作) (Preparation of peeling sheet with adhesive layer)

摻合100質量份具有源自n-丁基丙烯酸酯(BA)、甲基甲基丙烯酸酯(MMA)及2-羥乙基丙烯酸酯(2HEA)之構成 單元的丙烯酸系共聚物(BA/MMA/2HEA=52/20/28(質量%)、Mw=50萬)、6質量份多官能胺基甲酸乙酯丙烯酸酯系紫外線硬化型樹脂、1質量份二異氰酸酯系硬化劑、及1質量份作為光聚合起始劑之雙(2,4,6-三甲基苯甲醯基)苯基氧化膦,以甲基乙基酮稀釋,調製固體含量濃度32質量%之黏著劑的溶液。 Blending 100 parts by mass has a composition derived from n-butyl acrylate (BA), methyl methacrylate (MMA) and 2-hydroxyethyl acrylate (2HEA) Unit of acrylic copolymer (BA/MMA/2HEA=52/20/28 (mass %), Mw=500,000), 6 parts by mass of multifunctional urethane acrylate ultraviolet curable resin, 1 part by mass Diisocyanate hardener, and 1 part by mass of bis(2,4,6-trimethylbenzyl)phenylphosphine oxide as photopolymerization initiator, diluted with methyl ethyl ketone to adjust the solid content concentration 32% by mass solution of adhesive.

而且剝離薄片(Lintec公司製、商品名「SP-PET381031」,進行矽酮剝離處理之聚對苯二甲酸乙二酯(PET)薄膜、厚度:38μm)經剝離處理的面上,塗佈上述之黏著劑組成物的溶液,並使其乾燥,製作具有厚度20μm之黏著劑層之附黏著劑層之剝離薄片。 And the peeling sheet (made by Lintec, trade name "SP-PET381031", silicone peeling polyethylene terephthalate (PET) film, thickness: 38 μm) on the peeled surface, apply the above The solution of the adhesive composition was dried to prepare a peeling sheet with an adhesive layer and an adhesive layer having a thickness of 20 μm.

製造例3 Manufacturing Example 3 (兩面附易接著層之PET薄膜之製作) (Production of PET film with easy adhesion layer on both sides)

與設置於一側的面設置易接著層(第1易接著層)之厚度50μm之附易接著層之PET薄膜(東洋紡公司製、商品名「PET50 A-4100」)之第1易接著層相反側的面上,塗佈聚酯系錨定塗劑(Anchor coating agent)(荒川化學公司製),並使其乾燥,設置厚度2μm之第2易接著層,而得到厚度52μm之兩面附易接著層之PET薄膜。該兩面附易接著層之PET薄膜的楊氏模量為2500MPa。 Contrary to the first easy bonding layer of a PET film (made by Toyobo Co., Ltd., trade name "PET50 A-4100") with a thickness of 50 μm and an easy bonding layer (the first easy bonding layer) provided on one side On the side surface, polyester anchor coating agent (Arakawa Chemical Co., Ltd.) was applied and dried, and a second easy adhesion layer with a thickness of 2 μm was provided to obtain an easy adhesion on both sides with a thickness of 52 μm. PET film. The Young's modulus of the PET film with an adhesive layer on both sides is 2500 MPa.

實施例1~2、比較例1~4 Examples 1-2, Comparative Examples 1-4 (1)緩衝層形成用組成物的調製 (1) Preparation of the composition for buffer layer formation

作為能量線聚合性化合物,將於製造例1合成之胺基甲酸乙酯丙烯酸酯系寡聚物(UA-1)、異莰基丙烯酸酯(IBXA)、苯基羥丙基丙烯酸酯(HPPA),以表1所記載之摻合量摻合,進而摻合2.0質量份作為光聚合起始劑之1-羥環己基苯基酮(BASF公司製、製品名「Irgacure184」)、0.2質量份酞菁系顏料,調製緩衝層形成用組成物。 As energy ray polymerizable compounds, ethyl urethane acrylate oligomer (UA-1), isobornyl acrylate (IBXA), phenyl hydroxypropyl acrylate (HPPA) synthesized in Production Example 1 , Blended at the blending amount described in Table 1, and further blended 2.0 parts by mass of 1-hydroxycyclohexyl phenyl ketone (manufactured by BASF, product name "Irgacure184") as a photopolymerization initiator, 0.2 parts by mass of phthalide A cyanine pigment is used to prepare a composition for forming a buffer layer.

(2)黏著薄片的製作 (2) Production of adhesive sheet

於剝離薄片(Lintec公司製、商品名「SP-PET381031」、進行矽酮剝離處理之聚對苯二甲酸乙二酯(PET)薄膜、厚度:38μm)經剝離處理的面上,塗佈上述之緩衝層形成用組成物形成塗佈膜。而且對於該塗佈膜,照射紫外線,使該塗佈膜半硬化,形成厚度43μm之緩衝層形成膜。 Apply the above to the peeled sheet (polyethylene terephthalate (PET) film made by Lintec, trade name "SP-PET381031", silicone peeled polyethylene terephthalate (PET) film, thickness: 38 μm) The composition for buffer layer formation forms a coating film. The coating film was irradiated with ultraviolet rays to semi-harden the coating film to form a buffer layer forming film with a thickness of 43 μm.

尚,上述之紫外線照射使用皮帶輸送機式紫外線照射裝置(製品名「ECS-401GX」、Eye graphics公司製)及高壓水銀燈(H04-L41Eye graphics公司製:H04-L41),以燈高度150mm、燈輸出3kW(換算輸出120mW/cm)、光線波長365nm之照度120mW/cm2、照射量100mJ/cm2之照射條件下進行。 Still, the aforementioned ultraviolet irradiation uses a belt conveyor type ultraviolet irradiation device (product name "ECS-401GX", manufactured by Eye Graphics) and a high-pressure mercury lamp (H04-L41 manufactured by Eye Graphics: H04-L41), with a lamp height of 150 mm and a lamp The output was performed under irradiation conditions of 3 kW (converted output 120 mW/cm), illuminance of light wavelength 365 nm, 120 mW/cm 2 , and irradiation amount of 100 mJ/cm 2 .

而且貼合形成之緩衝層形成膜的表面、與於製造例3製作之兩面附易接著層之PET薄膜之第1易接著層,從緩衝層形成膜上之剝離薄片側照射再度紫外線,使該緩衝 層形成膜完全硬化,形成厚度43μm之緩衝層。 Then, the surface of the buffer layer forming film formed by bonding and the first easy bonding layer of the PET film with an easy bonding layer on both sides produced in Manufacturing Example 3 were irradiated with ultraviolet rays again from the peeling sheet side on the buffer layer forming film, so that buffer The layer-forming film was completely cured to form a buffer layer with a thickness of 43 μm.

尚,上述之紫外線照射使用上述之紫外線照射裝置及高壓水銀燈,以燈高度150mm、燈輸出3kW(換算輸出120mW/cm)、光線波長365nm之照度160mW/cm2、照射量500mJ/cm2之照射條件下進行。 Still, the above-mentioned ultraviolet irradiation uses the above-mentioned ultraviolet irradiation device and high-pressure mercury lamp, with a lamp height of 150 mm, a lamp output of 3 kW (converted output of 120 mW/cm), an illumination of 160 mW/cm 2 with a light wavelength of 365 nm, and an irradiation amount of 500 mJ/cm 2 Under conditions.

其次,於上述兩面附易接著層之PET薄膜之第2易接著層上,貼合於製造例2製作之附黏著劑層之剝離薄片的黏著劑層,製作具有與圖1(d)之黏著薄片1d相同構成之黏著薄片。 Next, on the second easy-adhesive layer of the PET film with the easy-adhesive layer on both sides, stick the adhesive layer of the peeling sheet with the adhesive layer prepared in Manufacturing Example 2 to produce an adhesive layer with FIG. 1(d) The sheet 1d is an adhesive sheet of the same composition.

對於如以上所製作之黏著薄片,將各種物性 之測定及特性之評價由以下所記載之方法進行。將該結果示於表1。 For the adhesive sheet made as above, various physical properties The measurement and evaluation of the characteristics were carried out by the method described below. The results are shown in Table 1.

<擠入深度(X)之測定> <Determination of Extrusion Depth (X)>

使用動態顯微硬度計(島津製作所(股)製、製品名「DUH-W201S」)、及作為壓頭之先端曲率半徑100nm、稜間角115°之三角錐形狀壓頭,於23℃、50%RH(相對濕度)之環境下測定。 Use a dynamic microhardness tester (manufactured by Shimadzu Corporation, product name "DUH-W201S") and a triangular cone-shaped indenter with a tip radius of curvature of 100 nm and an inter-angle of 115° as the indenter at 23°C, 50 Measured in %RH (relative humidity) environment.

具體而言,於動態顯微硬度計之玻璃板上,去除所製作之黏著薄片的緩衝層上之剝離薄片,緩衝層如表出的方式設置,對於該緩衝層,將上述三角錐形狀壓頭之先端以10μm/分鐘之速度擠入,進行壓縮荷重到達2mN時之擠入深度(X)的測定。 Specifically, on the glass plate of the dynamic microhardness tester, the peeling sheet on the buffer layer of the prepared adhesive sheet is removed, the buffer layer is arranged as shown, and for the buffer layer, the above-mentioned triangular cone-shaped indenter is pressed The tip is squeezed in at a rate of 10 μm/minute, and the squeeze depth (X) is measured when the compression load reaches 2 mN.

<緩衝層之tan δ的最大值的測定> <Measurement of the maximum value of tan δ of the buffer layer>

以與上述相同之方法,將由以個別之實施例及比較例使用之緩衝層形成用組成物所構成之厚度500μm之緩衝層形成膜形成於第1剝離薄片上,進而於該緩衝層形成膜上貼合第2剝離薄片。尚,所使用之第1、2剝離薄片,係與上述之實施例及比較例使用之種類相同者。 In the same manner as above, a buffer layer forming film with a thickness of 500 μm composed of the buffer layer forming compositions used in the individual examples and comparative examples was formed on the first release sheet, and then on the buffer layer forming film Attach the second peeling sheet. It is to be noted that the first and second peeling sheets used are the same as those used in the above examples and comparative examples.

而且從第1剝離薄片側再度照射紫外線,使上述緩衝層形成膜完全硬化,形成厚度500μm之試驗用緩衝層。尚,上述之紫外線照射使用上述之紫外線照射裝置及高壓水銀燈,以燈高度150mm、燈輸出3kW(換算輸出120mW/cm)、光線波長365nm之照度160mW/cm2、照射量500mJ/cm2之照射條件下進行。 Furthermore, ultraviolet rays were irradiated from the side of the first peeling sheet again to completely harden the buffer layer-forming film to form a test buffer layer having a thickness of 500 μm. Still, the above-mentioned ultraviolet irradiation uses the above-mentioned ultraviolet irradiation device and high-pressure mercury lamp, with a lamp height of 150 mm, a lamp output of 3 kW (converted output of 120 mW/cm), an illumination of 160 mW/cm 2 with a light wavelength of 365 nm, and an irradiation amount of 500 mJ/cm 2 Under conditions.

去除所製作之試驗用緩衝層上之兩面剝離薄片後,使用切成特定大小之試驗片,由動態黏彈性裝置(Orientec公司製、製品名「Rheovibron DDV-II-EP1」),測定於頻率數11Hz、在溫度範圍-20~150℃之損失彈性率及儲藏彈性率。 After removing the peeling sheet on both sides of the prepared test buffer layer, using a test piece cut into a specific size, a dynamic viscoelastic device (manufactured by Orientec, product name "Rheovibron DDV-II-EP1"), measured at the frequency 11Hz, loss elasticity and storage elasticity in temperature range -20~150℃.

將各溫度之「損失彈性率/儲藏彈性率」之值作為該溫度之tanδ算出,將在-5~120℃範圍之tanδ的最大值作為「緩衝層之tan δ的最大值」記載於表1。 Calculate the value of "loss elasticity/storage elasticity" at each temperature as the tanδ at that temperature, and record the maximum value of tanδ in the range of -5 to 120°C as the "maximum value of tan δ of the buffer layer" in Table 1. .

<異物吸附性(晶圓破裂之有無)的評價> <Evaluation of Absorbency of Foreign Matter (Whether Wafer Was Cracked)

於厚度700μm之矽酮晶圓的表面,將去除製作之黏著薄片之黏著劑層上的剝離薄片之經表出之黏著劑層,使 用BG膠帶用塑封機(Lintec公司製、製品名「塑封機RAD-3500m/12」)貼合。 On the surface of the silicone wafer with a thickness of 700 μm, remove the adhesive layer from the peeled sheet on the adhesive layer of the manufactured adhesive sheet, so that Use BG tape with a plastic sealing machine (made by Lintec, product name "Plastic Packaging Machine RAD-3500m/12") for bonding.

貼附黏著薄片於矽酮晶圓後,去除緩衝層上之剝離薄片,於表出之緩衝層的表面,作為擬似異物,5處貼附膠帶(於厚度6μm之PET薄膜上,設置由厚度3μm之丙烯酸系黏著劑所構成之黏著劑層者、縱:1cm、橫:2cm、厚度:9μm)。 After attaching the adhesive sheet to the silicone wafer, remove the peeling sheet on the buffer layer, on the surface of the exposed buffer layer, as a pseudo foreign body, attach the tape at 5 places (on a PET film with a thickness of 6 μm, set by a thickness of 3 μm Adhesive layer composed of acrylic adhesive, vertical: 1cm, horizontal: 2cm, thickness: 9μm).

而且使用晶圓內面研削機(DISCO公司製、製品名「DFG-8540」),從未貼附該矽酮晶圓之黏著薄片的內面,研削至厚度成為100μm為止。 Furthermore, using a wafer inner surface grinding machine (manufactured by DISCO, product name "DFG-8540"), the inner surface of the adhesive sheet to which the silicone wafer was never attached was ground until the thickness became 100 μm.

研削後以目視觀察矽酮晶圓破裂的有無,由下述之基準,評價黏著薄片之異物吸附性。 After grinding, visually observe whether the silicone wafer is cracked or not, and evaluate the foreign matter adsorption of the adhesive sheet based on the following criteria.

A:未觀察到晶圓之破裂,黏著薄片之異物吸附性良好。 A: No cracking of the wafer is observed, and the foreign matter of the adhesive sheet is well adsorbed.

F:觀察到晶圓之破裂,黏著薄片之異物吸附性不良。 F: Cracking of the wafer was observed, and the foreign matter of the adhesive sheet was poorly adsorbed.

Figure 104108645-A0202-12-0031-1
Figure 104108645-A0202-12-0031-1

由表1,瞭解到於實施例1~2製作之黏著薄片係異物吸附性優異。 From Table 1, it is understood that the adhesive sheets produced in Examples 1 to 2 are excellent in foreign substance adsorption.

另外,於比較例1~4製作之黏著薄片,由於用在晶圓之研削加工時,異物吸附性不良,變成於切削後產生晶圓之破裂的結果。 In addition, the adhesive sheets produced in Comparative Examples 1 to 4 are used in the grinding process of wafers, and the foreign substance adsorption is poor, which results in the cracking of the wafers after cutting.

[產業上之可利用性] [Industry availability]

本發明之黏著薄片係異物吸附性優異。 The adhesive sheet of the present invention is excellent in foreign substance adsorption.

因此,本發明之黏著薄片,例如在半導體晶圓之研削加工,可適合用在作為保護半導體晶圓的表面側之BG薄片,使用於該用途時,可有效果地防止半導體晶圓之破裂。 Therefore, the adhesive sheet of the present invention can be suitably used as a BG sheet for protecting the surface side of a semiconductor wafer, for example, in the grinding process of a semiconductor wafer. When used in this application, it can effectively prevent the semiconductor wafer from cracking.

1a、1b、1c、1d‧‧‧黏著薄片 1a, 1b, 1c, 1d

11‧‧‧剛性基材 11‧‧‧Rigid substrate

12‧‧‧緩衝層 12‧‧‧buffer layer

13‧‧‧黏著劑層 13‧‧‧Adhesive layer

14a、14b‧‧‧剝離薄片 14a, 14b ‧‧‧ peel sheet

15a、15b‧‧‧易接著層 15a, 15b‧‧‧easy adhesion layer

Claims (8)

一種黏著薄片,其係具有楊氏模量為1000MPa以上之剛性基材、與設置於該剛性基材之一面側的緩衝層、與設置於該剛性基材之另一面側的黏著劑層,且使用在藉由先切割法之半導體晶片的製造之黏著薄片,其特徵為前述緩衝層係由包含能量線聚合性化合物之緩衝層形成用組成物形成而成之層,且將先端曲率半徑100nm及稜間角115°之三角錘形狀壓頭的先端以10μm/分鐘之速度,擠入於該緩衝層時之壓縮荷重到達2mN所必須之擠入深度(X)為2.5μm以上,前述緩衝層形成用組成物作為前述能量線聚合性化合物,係包含胺基甲酸乙酯(甲基)丙烯酸酯(a1)、具有環形成原子數6~20之脂環基或雜環基之聚合性化合物(a2)、及具有官能基之聚合性化合物(a3),前述緩衝層形成用組成物中之成分(a2)與成分(a3)的含量比〔(a2)/(a3)〕,為1.3~3.0,前述緩衝層在-5~120℃之動態黏彈性之tanδ的最大值為1.2以上。 An adhesive sheet having a rigid substrate with a Young's modulus of 1000 MPa or more, a buffer layer provided on one side of the rigid substrate, and an adhesive layer provided on the other side of the rigid substrate, and The adhesive sheet used in the manufacture of semiconductor wafers by the first dicing method is characterized in that the aforementioned buffer layer is a layer formed of a composition for forming a buffer layer containing an energy ray polymerizable compound, and the tip curvature radius is 100 nm and The tip of the triangular hammer-shaped indenter with an inter-angle of 115° is pressed at a speed of 10 μm/minute at the speed of 10 μm/minute, and the compression depth (X) necessary for the compression load to reach 2 mN is 2.5 μm or more. The composition used as the aforementioned energy ray polymerizable compound is a polymerizable compound (a2) containing urethane (meth)acrylate (a1), an alicyclic group or heterocyclic group having 6 to 20 ring forming atoms ), and the polymerizable compound (a3) having a functional group, the content ratio of the component (a2) to the component (a3) in the aforementioned buffer layer forming composition [(a2)/(a3)] is 1.3 to 3.0, The maximum value of the dynamic viscoelastic tan δ of the aforementioned buffer layer at -5 to 120°C is 1.2 or more. 如請求項1之黏著薄片,其中,前述緩衝層形成用組成物中之成分(a2)與成分(a3)的含量比〔(a2)/(a3)〕為1.5~2.8。 The adhesive sheet according to claim 1, wherein the content ratio of the component (a2) to the component (a3) in the aforementioned buffer layer forming composition [(a2)/(a3)] is 1.5 to 2.8. 如請求項1或2之黏著薄片,其中,成分(a2)為含脂環基之(甲基)丙烯酸酯。 The adhesive sheet according to claim 1 or 2, wherein the component (a2) is an alicyclic group-containing (meth)acrylate. 如請求項1或2之黏著薄片,其中,成分(a3)為含羥基之(甲基)丙烯酸酯。 The adhesive sheet according to claim 1 or 2, wherein the component (a3) is a hydroxyl-containing (meth)acrylate. 如請求項1或2之黏著薄片,其中,前述緩衝層的厚度為5~100μm。 The adhesive sheet according to claim 1 or 2, wherein the thickness of the aforementioned buffer layer is 5 to 100 μm. 如請求項1或2之黏著薄片,其中,於前述剛性基材與前述緩衝層之間、及前述剛性基材與前述黏著劑層之間之至少一者具有易接著層。 The adhesive sheet according to claim 1 or 2, wherein at least one of the rigid substrate and the buffer layer and the rigid substrate and the adhesive layer have an easy-adhesion layer. 如請求項1或2之黏著薄片,其係於半導體晶圓之切削加工中,作為保護半導體晶圓之表面側之背面研磨薄片使用。 The adhesive sheet of claim 1 or 2 is used as a back grinding sheet to protect the surface side of the semiconductor wafer during the cutting process of the semiconductor wafer. 一種半導體晶片的製造方法,其係具有下述步驟(1B)~(3B),步驟(1B):於表面,貼附如請求項1~7中任一項之黏著薄片的黏著劑層於將特定深度之溝以特定之配置所設置之晶圓的該表面側,而得到附緩衝層之晶圓之步驟步驟(2B):載置於步驟(1B)所得之附緩衝層之晶圓的緩衝層於研削機之夾頭座上之步驟步驟(3B):將未設置附緩衝層之晶圓的緩衝層之晶圓的內側研削至成為特定的厚度為止,分割成各個晶片之步驟。 A method for manufacturing a semiconductor wafer, comprising the following steps (1B) to (3B), step (1B): attaching the adhesive layer of the adhesive sheet according to any one of claims 1 to 7 to the surface Steps of obtaining a wafer with a buffer layer in a groove of a specific depth with a specific configuration of the surface side of a wafer provided with a specific configuration Step (2B): placing the buffer with a wafer with a buffer layer obtained in step (1B) Step of layering on the chuck base of the grinder (3B): a step of grinding the inside of the wafer of the buffer layer without the wafer with the buffer layer until it becomes a specific thickness and dividing it into individual wafers.
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JPWO2023281860A1 (en) * 2021-07-06 2023-01-12
JP2023094525A (en) 2021-12-23 2023-07-05 リンテック株式会社 Protective sheet for workpiece processing and manufacturing method for singulated workpiece
JP2023118530A (en) 2022-02-15 2023-08-25 リンテック株式会社 Protection sheet for workpiece processing and method for manufacturing singulated workpiece
JP2023132215A (en) 2022-03-10 2023-09-22 リンテック株式会社 Workpiece processing protective sheet, and manufacturing method for workpiece individualized piece
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