TWI681529B - Resin-encapsulated semiconductor device and method of manufacturing the same - Google Patents

Abstract

A resin-sealed semiconductor device composed of a first resin sealing body (25) and a second resin sealing body (26), the first resin sealing body (25) is composed of: a first semiconductor element (2); an external terminal (5) ; The inner wiring (4); and the first resin (6) covering them; at least the back surface of the external terminal (5) and the back surface of the semiconductor element (2) and the surface of the inner wiring (4) are made of the first resin (6) ) Exposed, the second resin sealing body (26) is composed of: a second semiconductor element (7) with electrode pads formed on the surface; a second resin (8) covering them; and connected to the electrode pads, and by the A metal body exposed by the two resins; the first resin sealing body (25) and the second resin sealing body (26) are overlapped to electrically connect the internal wiring and the metal body.

Description

Resin-sealed semiconductor device and method of manufacturing the same

The invention relates to a structure of a multi-wafer type resin-sealed semiconductor device and a method for manufacturing the same.

With the demand for miniaturization and weight reduction of electronic devices and high functionality, semiconductor devices mounted on electronic devices are also required to be mounted at high density. In recent years, smaller and thinner semiconductor devices that can be highly integrated have been required.

Against this trend background, semiconductor devices correspond to proposals for various applications in various forms such as gull-wing, footless, BGA, and wafer-level packaging. In addition, in today's environment in which the price of commodities is required to be reduced, their semiconductor devices are also required to be provided at a low price in accordance with the function of small size and high integration. For example, to obtain a higher integration function, as shown in FIG. 7(1), the conventional semiconductor device is composed of the following: a semiconductor element 1; the semiconductor element 1 is mounted on a die pad provided on a substrate 10 Adhesive on 23; metal wire 9 connecting a plurality of wires 20 provided on the substrate 10; and semiconductor element 1, adhesive, metal wire 9 and plural A sealing resin 11 that seals the wiring 20; a solder ball 22 is formed on the external connection portion 21 as an external terminal on the surface of the other substrate 10, and has a structure called BGA (BALL GRID ARRAY).

As the substrate 10, a heat-resistant substrate represented by BT resin (bismaleimide resin) is used, and a die pad 23 on which the semiconductor element 1 is mounted and a plurality of wirings 20 are formed on one side, and an external connection portion 21 is formed on the other side, through The through hole 24 provided in the substrate 10 and covered with the conductive layer is connected to each surface to constitute. Solder balls 22 that electrically and physically connect the semiconductor sealing body and the mounting substrate are mounted on the external connection portion 21 in a lattice or staggered arrangement. (For example, refer to Patent Document 1).

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Unexamined Patent Publication No. 7-193162

However, this conventional BGA type resin-sealed semiconductor device is different from a semiconductor package using a metal lead frame, because a double-sided substrate or a multilayer wiring substrate using a heat-resistant resin base material makes the substrate manufacturing process complicated. For example, when manufacturing a substrate, it is necessary to manufacture wiring for mounting a semiconductor element on the mounting surface side and manufacturing a mask for forming a circuit as an external connection terminal on the other side. In addition, the manufacture of substrates requires resist coating, exposure, development, patterning of resists, formation of through holes and plating for common use between wiring and external connection terminals, resist stripping, and substrate fit. Therefore, the average unit price of a substrate is much higher than the metal lead frame, and the overall packaging cost becomes higher.

In addition, as shown in FIGS. 7(2) and 7(3), when performing multi-chip mounting or module mounting in which a plurality of semiconductor elements and electronic components are mounted in one semiconductor device, a plurality of semiconductor elements are mounted adjacent to each other On the substrate, or the form of overlapping semiconductor devices, so as the number of mounted semiconductor devices or electronic components increases, the size of the semiconductor device becomes larger, and it is difficult to make the electronic device using the semiconductor device smaller, thinner, and more High integration.

In order to solve the above problems, the present invention aims to provide a semiconductor device that can reduce the size of a semiconductor device more inexpensively and more even when the number of mounted semiconductor elements or electronic elements is increased compared to conventional multi-wafer type semiconductor devices.

To solve the above problems, the following means are used.

First, a resin-sealed semiconductor device is composed of a first resin-sealed body and a second resin-sealed body; characterized in that the first resin-sealed body is composed of the following: a first semiconductor element; and an external terminal on the first semiconductor Separately arranged around the element; internal wiring connecting the first semiconductor element to the surface of the external terminal; and The first resin covers the first semiconductor element and the external terminal and the inner wiring; the back surface of the external terminal and the back surface of the first semiconductor element and the surface of the inner wiring are exposed by the first resin and the second resin The sealing body is composed of: a second semiconductor element; a second resin covering the second semiconductor element; and a metal body connected to the second semiconductor element and partially exposed by the second resin; the inner wiring exposes the first The surface of the resin sealing body and the surface of the metal body where the second resin sealing body is exposed are closely formed, and the inner wiring is electrically connected to the metal system.

In addition, a method of manufacturing a resin-sealed semiconductor device comprising a first resin-sealed body and a second resin-sealed body is characterized by the following process: forming a plurality of strips on one main surface of a substrate The process of wiring; the process of forming external terminals on a part of the surface of at least one or more internal wires of the plurality of internal wires, the surface being the surface of the internal wire opposite to the substrate; the first semiconductor element and the plural The process of electrically connecting the internal wiring; the process of resin sealing the main surface of one side of the substrate on which the internal wiring, the external terminal, and the first semiconductor element are arranged with the first resin; The process of polishing the surface on the opposite side of the surface where the first resin is in contact with the substrate to expose the back surface of the external terminal and the surface of the first semiconductor element on the side opposite to the element side; the other side of the substrate The process of opening the main surface outside the outer peripheral portion to expose the plurality of internal wirings and the first resin; the process of electrically connecting the second semiconductor element and the plurality of internal wirings with a metal body; A process of resin-sealing the second semiconductor element, the metal body, and the plurality of internal wirings to form a resin sealing body by integrally molding the first resin and the second resin; and slicing the resin sealing body It becomes the slicing process of each resin-sealed semiconductor device.

By the means described above, compared with the conventional multi-chip semiconductor device mounted with a plurality of semiconductor elements, even if the number of mounted semiconductor elements or electronic elements increases, it is possible to reduce the cost of the semiconductor device even more cheaply size. Therefore, electronic devices using semiconductor devices contribute to cheaper, smaller, thinner, and higher integration.

1‧‧‧Semiconductor components

2‧‧‧The first semiconductor element

3A, 3B‧‧‧protruding electrodes

4‧‧‧ Internal wiring

5‧‧‧External terminal

6‧‧‧ First resin

7‧‧‧Second semiconductor element

8‧‧‧Second resin

9‧‧‧Metal wire

10‧‧‧ substrate

11‧‧‧Sealing resin

12‧‧‧Coated layer

20‧‧‧Wiring

21‧‧‧External connection

22‧‧‧Solder ball

23‧‧‧ Die holder

24‧‧‧Through hole

25‧‧‧The first resin sealing body

26‧‧‧Second resin sealing body

[FIG. 1] An explanatory diagram of the structure of a resin-sealed semiconductor device according to a first embodiment of the present invention, (1) is a view through the semiconductor device from the external terminal side, and (2) is broken along the cutting line AA of (1) Face map.

[FIG. 2] A cross-sectional view illustrating the structure of a resin-sealed semiconductor device according to a second embodiment of the present invention.

[FIG. 3] A cross-sectional view illustrating the structure of a resin-sealed semiconductor device according to a third embodiment of the present invention.

[FIG. 4] A cross-sectional view illustrating the structure of a resin-sealed semiconductor device according to a fourth embodiment of the present invention.

[FIG. 5] A cross-sectional view of a process flow for explaining the method of manufacturing the resin-sealed semiconductor device according to the first embodiment of the present invention.

[FIG. 6] Continuing with FIG. 5, a cross-sectional view of a process flow for explaining the manufacturing method of the resin-sealed semiconductor device according to the first embodiment of the present invention.

[FIG. 7] A cross-sectional view of a description of a conventional resin-sealed semiconductor device, (1) is a cross-sectional view of a single-chip mounted configuration, (2) and (3) is a cross-sectional view of a multi-chip mounted configuration .

[FIG. 8] An explanatory view of the structure of a resin-sealed semiconductor device according to a fifth embodiment of the present invention, (1) is a diagram through which the semiconductor device is seen from the external terminal side, and (2) is broken along the cutting line AA of (1) Face map.

[FIG. 9] A cross-sectional view illustrating the structure of a resin-sealed semiconductor device according to a sixth embodiment of the present invention.

[FIG. 10] A cross-sectional view illustrating the structure of a resin-sealed semiconductor device according to a seventh embodiment of the present invention.

[FIG. 11] A cross-sectional view of a process flow illustrating a method of manufacturing a resin-sealed semiconductor device according to a fifth embodiment of the present invention.

[FIG. 12] Continuing with FIG. 11, a cross-sectional view of a process flow illustrating a method of manufacturing a resin-sealed semiconductor device according to a fifth embodiment of the present invention.

Hereinafter, the resin-sealed semiconductor device of the first embodiment of the present invention will be described.

FIG. 1 is a diagram showing a resin-sealed semiconductor device according to a first embodiment of the present invention, (1) is a diagram through which the semiconductor device is seen through the back of an external terminal, and FIG. 1(2) is along the cutting line of FIG. 1(1) AA cross-sectional view.

As shown in FIG. 1, the resin-sealed semiconductor device of the first embodiment is a 6-pin type multi-chip package having six external terminals 5. Its composition is as follows.

It includes: a first semiconductor element 2; a plurality of internal wirings 4; flip-chip connection of protruding electrodes 3A formed on a plurality of electrode pads (not shown) provided on the first semiconductor element 2; and The external terminal 5 is formed in such a manner that one of the main surfaces (back surface) of the plurality of inner wires 4 is integrally connected; it has: a first resin sealing body 25 to expose only the other main surface (front surface) of the inner wires 4 and The back surface of the external terminal 5, that is, the mounting surface is resin-sealed by the first resin 6; the second semiconductor element 7 shown by a dotted line in FIG. 1(1); and the metal body, that is, the bump electrode 3B, formed on On a plurality of electrode pads (not shown) of the second semiconductor element 7, a flip-chip connection is made to the other main surface (surface) of the internal wiring 4; the second semiconductor element 7 and the protruding electrode 3B are connected by the second The second resin sealing body 26 resin-sealed by the resin 8 is composed of a surface of the protruding electrode 3B that is a metal body exposed by the second resin sealing body 26 and a surface of the inner wiring 4 exposed by the first resin sealing body 25 Closely formed structure.

The first resin sealing body 25 is composed of a first semiconductor element 2 provided with a protruding electrode 3A, an external terminal 5 arranged separately around the first semiconductor element 2, and an internal wiring connected to the protruding electrode 3A and the external terminal 5 4 The structure is sealed by the first resin 6. The back surface of the first semiconductor element 2 and the external terminal is exposed by the first resin 6, the back surface of the first semiconductor element 2 and the back surface of the external terminal 5 form a plane by the surface of the first resin 6, and become the first one side.

In addition, the second resin sealing body 26 is configured such that the second semiconductor element 7 provided with the bump electrode 3B is covered with the second resin 8, and the surface of the bump electrode 3B is exposed by the second resin 8. The inner wiring 4 exposed by the first resin sealing body 25 and the bump electrode 3B exposed by the second resin sealing body 26 are connected to form the resin-sealed semiconductor device of the present invention. Moreover, the cross-sectional view of the first resin sealing body 25 and the second resin sealing body 26 is rectangular, and the resin-sealed semiconductor device composed of the first resin sealing body 25 and the second resin sealing body 26 also has a rectangular cross-section.

As shown in FIGS. 1(1) and 1(2), in the resin-sealed semiconductor device of the first embodiment, the first semiconductor element 2 and the second semiconductor element 7 pass through the protruding electrodes 3A, 3B and communicate with the internal wiring 4 respectively. Flip-chip connection is made and mounted face-to-face in the semiconductor device. As described above, by being face-to-face mounted, the wiring distance between the semiconductor elements can be shortened compared to the conventional one, and it is possible to realize a design with smaller wiring loss (space, resistance, etc.) and high efficiency.

In the first embodiment, the first semiconductor element 2 and the second semiconductor element 7 consists of control elements and MOSFETs that control the switching of MOSFETs. Protruding electrodes 3A and 3B of copper are formed on the electrode portions of the first semiconductor element 2 and the second semiconductor element 7, respectively, and the connection surfaces of the inner wiring 4 made of copper and the protruding electrodes 3A and 3B are in order Form a layered film of nickel, palladium, and gold. For the first resin 6 and the second resin 8, a thermosetting epoxy resin containing a general light-shielding component used for sealing the semiconductor element is used. Depending on the product specification and form, it is also possible to use a light-transmitting sealing resin as the first resin 6 or the second resin 8.

In addition, the surface of the first semiconductor element 2 opposite to the element formation side is the same main surface as the back surface of the external terminal 5, that is, the mounting surface, and is formed by exposing the first resin 6 to the outside. This exposure process can be performed by polishing Resin. For example, in flip-chip connection, the thickness of the first semiconductor element 2 is set to 250 μm, and the flip-chip connection is carried out in a state where the rigidity of the element is high. By the subsequent resin grinding process, it can be thin until it becomes the same plane as the external terminal 5化first semiconductor element 2

In particular, the larger the size of the semiconductor element, for example, when the thickness is reduced to 50 μm, the rigidity of the semiconductor element is reduced, and the flip chip connection becomes difficult, resulting in a decrease in quality or a reduction in production yield. In the first embodiment, even if a plurality of larger semiconductor elements are mounted on the resin-sealed semiconductor device, the flip-chip connection is performed by the above-described process, so that a thinner semiconductor device can be provided with a stable yield.

Hereinafter, the resin-sealed semiconductor device of the second embodiment of the present invention will be described.

FIG. 2 is a diagram of a resin-sealed semiconductor device according to a second embodiment of the invention Sectional view. Although the second embodiment has the same structure as the first embodiment, the difference is that the second semiconductor element 7 is fixed to the main surface of the first resin 6 in a face-up manner using a bonding material, and is provided on the second semiconductor element 7 The plurality of electrode pads and the plurality of internal wirings 4 are connected by wire bonding using the metal body 9 that is the metal body in this embodiment. The metal wire 9 used in the second embodiment uses copper wire. In addition, instead of the configuration of the semiconductor element exemplified in the first embodiment, the first semiconductor element 2 and the second semiconductor element 7 may be configured as control elements that respectively control MOSFETs and MOSFET switches.

Here, the composition of the first resin 6 and the second resin 8 can be determined individually. It can be the same composition or a different composition. For example, when the second semiconductor element 7 is an optical element and the first semiconductor element 2 is a control element, the second resin 8 may be a transparent resin, and the first resin 6 may be a light-shielding resin.

The resin-sealed semiconductor device of the third embodiment of the present invention will be described below.

3 is a cross-sectional view of a resin-sealed semiconductor device according to a third embodiment of the invention. Although the third embodiment has the same structure as the first embodiment, the difference is that the first semiconductor element 2 and the second semiconductor element 7 are replaced with a plurality of semiconductor elements.

As shown in FIG. 3(1), the plurality of first semiconductor elements 2 and the plurality of second semiconductor elements 7 and the plurality of internal wirings 4 are simultaneously formed by flip-chip connection. Furthermore, as shown in FIG. 3(2), the plurality of first semiconductor elements 2 and the plurality of internal wirings 4 are formed by flip chip connection, and the plurality of The two semiconductor elements 7 and the plurality of internal wires 4 may also be constituted by wire bonding. The connection form of the plurality of first semiconductor elements 2, the plurality of second semiconductor elements 7 and the plurality of internal wirings 4 may be any combination of wire bonding connection or flip chip connection according to the purpose of the target product.

As described above, the resin-sealed semiconductor device of the third embodiment, even for the advancement of product specifications or applications achieved by a plurality of semiconductor elements or a plurality of elements, without increasing the size of the semiconductor device, can provide The installation option with maximum utilization of limited space helps to contribute to the development of electronic devices that require smaller, thinner and more integrated.

Hereinafter, the resin-sealed semiconductor device of the fourth embodiment of the present invention will be described.

4 is a cross-sectional view of a resin-sealed semiconductor device according to a fourth embodiment of the invention. The fourth embodiment has the same configuration as the first embodiment. However, the surface of the first semiconductor element 2 opposite to the element formation side is not formed on the same main surface as the back surface of the external terminal 5, that is, the mounting surface, but is formed by exposing the first resin 6 to the outside. In FIG. 4(1), the first semiconductor element 2 is flip-chip connected, and its element forming surface is provided facing the second semiconductor element 7. In addition, in FIG. 4(2), the first semiconductor element 2 is wire-bonded and connected, and the element forming surface thereof and the element forming surface of the second semiconductor element 7 are provided in the same direction. When the first semiconductor element 2 cannot be exposed to the outside in terms of product specifications, as shown in FIGS. 4(1) and 4(2), a configuration in which the first semiconductor element 2 is embedded in the first resin 6 is effective.

Next, the method of manufacturing the resin-sealed semiconductor device according to the first embodiment of the present invention will be described based on the cross-sectional views shown in each process.

As shown in FIG. 5(1), first, the substrate 10 is prepared. The substrate 10 is an iron-based steel plate with a length of 250 mm, a width of 80 mm, and a thickness of 250 μm. Other alloy materials using copper as a base material or alloy materials using nickel as a base material can also be used. In addition, it can also be an organic material board such as an insulator ceramic or fiber reinforced plastic (FRP) board or polyamide. As shown in FIG. 5(2), on one main surface of the substrate 10, a wiring pattern with a thickness of 15 μm is formed as the copper inner wiring 4 by electrolytic plating or printing. After that, as shown in FIG. 5(3), a part of the surface of the internal wiring 4 where the external terminal 5 is to be formed is formed a pattern of the external terminal 5 with a thickness of 80 μm by electrolytic plating, and this surface becomes the internal wiring 4 and the substrate 10 The opposite side. The material of the external terminal may be composed of a single-layer material of solder, gold, silver, copper, aluminum, palladium, or nickel, or a multi-layer metal material formed by laminating these metals.

Next, as shown in FIG. 5(4), the first semiconductor element 2 ground to a thickness of 250 μm by back grinding is flip-chip connected to a part of the surface of the internal wiring 4 through the bump electrode 3A.

Next, as shown in FIG. 5(5), the internal wiring 4 and the external terminals 5 and the first semiconductor element 2 are resin-sealed by transfer molding from the one main surface side of the substrate 10 with the first resin 6 to form a resin A resin sealing body with a thickness of about 200 μm. The first resin 6 is a general thermosetting epoxy resin containing a light-shielding component used for sealing semiconductor devices.

Next, as shown in FIG. 6(1), the entire main surface of the first resin 6 is polished to expose the mounting surface of the external terminal 5 and the surface of the first semiconductor element 2 opposite to the element side. Next, as shown in FIG. 6(2), the inner surface of the other main surface of the substrate 10 is etched outside the outer peripheral portion to make the inner The wiring 4 and the first resin 6 are exposed. Next, as shown in FIG. 6(3), the second semiconductor device 7 and the internal wiring 4 are flip-chip connected through the bump electrode 3B provided in the second semiconductor element 7.

Next, as shown in FIG. 6(4), the second semiconductor element 7 and the inner wiring 4 are resin-sealed by the transfer molding method using the second resin 8, so that the first resin 6 and the second resin 8 are integrally and closely molded A resin sealing body is formed. Like the first resin 6, the second resin 8 uses a thermosetting epoxy resin containing a general shading component. In addition, before the integral molding with the second resin 8, the surfaces of the inner wiring 4 and the first resin 6 that are etched by plasma treatment or the like are washed, the resin adhesion of the interface can be improved, and high reliability can be obtained Resin seal. The formation of the second resin 8 can replace the transfer molding method with a casting method or a pressing method.

Finally, as shown in FIG. 6(5), the resin sealing body is sliced by a cutting edge to complete each resin-sealed semiconductor device. It is also possible to replace the cutting edge with a breaking method or a laser cutting method.

Next, the resin-sealed semiconductor device of the fifth embodiment of the present invention will be described below.

8 is a diagram of a resin-sealed semiconductor device according to a fifth embodiment of the present invention, (1) is a diagram through which the semiconductor device is seen through the back of an external terminal, and FIG. 8(2) is taken along line AA of FIG. 8(1) Sectional view.

As shown in FIG. 8, the resin-sealed semiconductor device of the fifth embodiment is a 6-pin type multi-chip package having six external terminals 5. The structure includes: a first semiconductor element 2; a plurality of internal wirings 4 to be provided on a plurality of electrode pads (not shown) of the first semiconductor element 2 The formed protruding electrode 3A is flip-chip connected; and the external terminal 5 is formed so as to be integrally connected on one main surface (rear surface) of the plurality of inner wirings 4; it has: a first resin sealing body 25 to expose only the inner The other main surface (surface) of the wiring 4 and the back surface of the external terminal 5 that is the mounting surface are resin-sealed by the first resin 6; the second semiconductor element 7; and the metal body, that is, the protruding electrode 3B, formed in A plurality of electrode pads (not shown) provided on the second semiconductor element 7 are flip-chip connected to the other main surface (surface) of the internal wiring 4; the second semiconductor element 7 and the protruding electrode 3B are connected by The second resin sealing body 26 resin-sealed by the two resins 8 is composed of a metal body, that is, a surface of the protruding electrode 3B exposed by the second resin sealing body 26 and a surface of the inner wiring 4 exposed by the first resin sealing body 25 The structure is closely formed.

The first resin sealing body 25 is composed of the first semiconductor element 2 provided with the protruding electrode 3A, the coating layer 12 provided on the surface of the first semiconductor element 2 opposite to the element formation side; around the first semiconductor element 2 The external terminal 5 in a separate arrangement, and the internal wiring 4 connected to the protruding electrode 3A and the external terminal 5 are sealed by the first resin 6. The back surface of the coating layer 12 and the external terminals provided on the surface of the first semiconductor element 2 opposite to the element formation side is exposed by the first resin 6 and is provided on the surface of the first semiconductor element 2 opposite to the element formation side The back surface of the coating layer 12 and the external terminal 5 is formed as a flat surface by the surface of the first resin 6 and becomes the first surface of the semiconductor device.

Further, the second resin sealing body 26 is configured such that the second semiconductor element 7 provided with the protruding electrode 3B is covered with the second resin 8 and the surface of the protruding electrode 3B The surface is exposed by the second resin 8. The inner wiring 4 exposed by the first resin sealing body 25 and the bump electrode 3B exposed by the second resin sealing body 26 are connected to form the resin-sealed semiconductor device of the present invention. Moreover, the cross-sectional view of the first resin sealing body 25 and the second resin sealing body 26 is rectangular, and the resin-sealed semiconductor device composed of the first resin sealing body 25 and the second resin sealing body 26 also has a rectangular cross-section.

As shown in FIG. 8(1) and FIG. 8(2), in the resin-sealed semiconductor device of the fifth embodiment, the first semiconductor element 2 and the second semiconductor element 7 communicate with the internal wiring 4 through the protruding electrodes 3A, 3B, respectively Flip-chip connection is made and mounted face-to-face in the semiconductor device. As described above, by being face-to-face mounted, the wiring distance between the semiconductor elements can be shortened compared to the conventional one, and it is possible to realize a design with smaller wiring loss (space, resistance, etc.) and high efficiency. In addition, the coating layer 12 provided on the surface of the first semiconductor element 2 opposite to the element formation side can protect the first semiconductor element 2 from the external environment.

In the fifth embodiment, the first semiconductor element 2 and the second semiconductor element 7 are respectively composed of a control element and a MOSFET that control the switching of the MOSFET. Protruding electrodes 3A and 3B of copper are formed on the electrode portions of the first semiconductor element 2 and the second semiconductor element 7, respectively, and the connection surfaces of the inner wiring 4 made of copper and the protruding electrodes 3A and 3B are in order Form a layered film of nickel, palladium, and gold. For the first resin 6 and the second resin 8, a thermosetting epoxy resin containing a general light-shielding component used for sealing the semiconductor element is used. Depending on the product specification and form, it is also possible to use a light-transmitting sealing resin as the first resin 6 or the second resin 8. First Semiconductor When the element 2 is sensitive to the influence of external light, by using a light-shielding material as the coating layer 12 provided on the surface of the first semiconductor element 2 opposite to the element formation side, the influence of external light can be reduced.

In addition, the surface of the coating layer 12 provided on the surface of the first semiconductor element 2 opposite to the element formation side is the same main surface as the mounting surface of the back surface of the external terminal 5 and is formed by exposing the first resin 6 to the outside The exposure process can be achieved by grinding the resin. For example, in the case of flip chip connection, the thickness of the first semiconductor element 2 is set to 50 μm, and a resin with a thickness of 80 μm is applied as the coating layer 12 provided on the surface of the first semiconductor element 2 opposite to the element formation side. The flip-chip connection is performed in the state of, and the resin coating layer 12 provided on the surface of the first semiconductor element 2 opposite to the element formation side is formed by the subsequent resin polishing process until it becomes the same plane as the external terminal 5 By grinding, the coating layer 12 can be thinned.

Especially in the resin grinding process, it is difficult to grind the three different materials of the external terminal 5 (such as copper), the first semiconductor element 2 (such as silicon) and the first resin 6 (epoxy resin), which may lead to quality degradation or production Yield reduction. Therefore, in the resin-sealed semiconductor device of the fifth embodiment, by providing the resin coating layer 12 on the surface of the first semiconductor element 2 opposite to the element formation side, only external terminals 5 (such as copper) need to be polished in the polishing process ) And the first resin 6 (eg epoxy resin) and the coating layer 12 (eg epoxy resin) two materials (eg copper and epoxy resin). Even when a plurality of larger semiconductor elements are mounted, the above-mentioned polishing process can be performed more easily, and therefore, a more integrated and thinner multi-chip semiconductor device can be provided with a stable yield. Especially the mother of the first semiconductor element 2 The silicon of the material is difficult to cut, so the provision of the coating layer 12 to improve the rapid cutting performance has an effect on the improvement of quality or the improvement of production yield.

Hereinafter, the resin-sealed semiconductor device of the sixth embodiment of the present invention will be described.

9 is a cross-sectional view of a resin-sealed semiconductor device according to a sixth embodiment of the invention. Although the sixth embodiment has the same structure as the fifth embodiment, the difference is that the second semiconductor element 7 is fixed to the main surface of the first resin 6 in a face-up manner using a bonding material, and is provided on the second semiconductor element 7 The plurality of electrode pads and the plurality of internal wirings 4 are connected by wire bonding using the metal body 9 that is the metal body in this embodiment. The metal wire 9 used in the sixth embodiment uses copper wire. In addition, instead of the configuration of the semiconductor element exemplified in the fifth embodiment, the first semiconductor element 2 and the second semiconductor element 7 may be configured as control elements that respectively control MOSFETs and MOSFET switches.

Here, the composition of the first resin 6 and the second resin 8 can be determined individually. It can be the same composition or a different composition. For example, when the second semiconductor element 7 is an optical element and the first semiconductor element 2 is a control element, the second resin 8 may be a transparent resin, and the first resin 6 may be a light-shielding resin.

The resin-sealed semiconductor device of the seventh embodiment of the present invention will be described below.

10 is a cross-sectional view of a resin-sealed semiconductor device according to a seventh embodiment of the invention. Although the seventh embodiment has the same structure as the fifth embodiment, the difference is that the first semiconductor element 2 and the second semiconductor element 7 are replaced by Change to the structure of a plurality of semiconductor elements.

As shown in FIG. 10(1), the plurality of first semiconductor elements 2 and the plurality of second semiconductor elements 7 and the plurality of internal wirings 4 are simultaneously formed by flip-chip connection. Also, as shown in FIG. 10(2), the plurality of first semiconductor elements 2 and the plurality of internal wirings 4 are formed by flip-chip connection, and the plurality of second semiconductor elements 7 and the plurality of internal wirings 4 can also be borrowed Consists of wire bonding connection. The connection form of the plurality of first semiconductor elements 2, the plurality of second semiconductor elements 7 and the plurality of internal wirings 4 may be any combination of wire bonding connection or flip chip connection according to the purpose of the target product.

As described above, in the resin-sealed semiconductor device of the seventh embodiment, even for the advanced product specifications or applications achieved by a plurality of semiconductor elements or a plurality of elements, without increasing the size of the semiconductor device, it is possible to provide Installation options that maximize the use of limited space help contribute to the development of electronic devices that require smaller, thinner, higher integration, and higher quality.

Next, the manufacturing method of the resin-sealed semiconductor device according to the fifth embodiment of the present invention will be described based on the cross-sectional views shown in each process.

As shown in FIG. 11(1), first, the substrate 10 is prepared. The substrate 10 is an iron-based steel plate with a length of 250 mm, a width of 80 mm, and a thickness of 250 μm. Other alloy materials using copper as a base material or alloy materials using nickel as a base material can also be used. In addition, it can also be an organic material board such as an insulator ceramic or fiber reinforced plastic (FRP) board or polyamide. As shown in FIG. 11(2), on one main surface of the substrate 10, a wiring pattern with a thickness of 15 μm is formed as a copper inner wiring 4 by electrolytic plating or printing. After that, as shown in Figure 11(3) As shown, a part of the surface of the internal wiring 4 where the external terminal 5 is to be formed is formed with a pattern of the external terminal 5 having a thickness of 80 μm by electrolytic plating, and this surface becomes the surface of the internal wiring 4 opposite to the substrate 10. The material of the external terminal may be composed of a single-layer material of solder, gold, silver, copper, aluminum, palladium, or nickel, or a multi-layer metal material formed by laminating these metals.

Next, as shown in FIG. 11(4), after back grinding is performed to a thickness of 50 μm, a wafer coated with a coating layer 12 having a thickness of 80 μm on the back grinding surface is sliced by dicing to become the first semiconductor element 2 so that The first semiconductor element 2 is flip-chip connected to the surface of a part of the internal wiring 4 through the bump electrode 3A. Next, as shown in FIG. 11(5), the internal wiring 4 and the external terminals 5 and the first semiconductor element 2 are resin-sealed by transfer molding from the one main surface side of the substrate 10 with the first resin 6 to form a resin A resin sealing body with a thickness of about 200 μm. The first resin 6 is a general thermosetting epoxy resin containing a light-shielding component used for sealing semiconductor devices.

Next, as shown in FIG. 12(1), the entire principal surface of the first resin 6 is polished to expose the mounting surface of the external terminal 5 and the coating layer 12 on the surface of the first semiconductor element 2 opposite to the element formation side. Next, as shown in FIG. 12(2), the other main surface of the substrate 10 is opened by etching other than the outer peripheral portion to expose the inner wiring 4 and the first resin 6. Next, as shown in FIG. 12(3), the second semiconductor device 7 and the internal wiring 4 are flip-chip connected through the bump electrode 3B provided in the second semiconductor element 7.

Next, as shown in FIG. 12(4), the second semiconductor element 7 and the inner wiring 4 are resin-sealed by the transfer molding method using the second resin 8, so that the first The first resin 6 and the second resin 8 are integrally and closely molded to form a resin sealing body. Like the first resin 6, the second resin 8 uses a thermosetting epoxy resin containing a general shading component. In addition, before the integral molding with the second resin 8, the surfaces of the inner wiring 4 and the first resin 6 that are etched by plasma treatment or the like are washed, the resin adhesion of the interface can be improved, and high reliability can be obtained Resin seal. The formation of the second resin 8 can replace the transfer molding method with a casting method or an extrusion method.

Finally, as shown in FIG. 12(5), the resin sealing body is sliced by a cutting blade to complete each resin-sealed semiconductor device. It can also replace the cutting edge and use splitting method or laser cutting method.

2‧‧‧The first semiconductor element

3A, 3B‧‧‧protruding electrodes

4‧‧‧ Internal wiring

5‧‧‧External terminal

6‧‧‧ First resin

7‧‧‧Second semiconductor element

8‧‧‧Second resin

25‧‧‧The first resin sealing body

26‧‧‧Second resin sealing body

Claims (32)

A resin-sealed semiconductor device is composed of a first resin-sealed body and a second resin-sealed body; characterized in that the first resin-sealed body is composed of the following: a first semiconductor element; and an external terminal on the first semiconductor element Separated around; internal wiring connecting the first semiconductor element and the surface of the external terminal; and a first resin covering the first semiconductor element and the external terminal and the internal wiring; the back surface of the external terminal and the above The back surface of the first semiconductor element and the surface of the inner wiring are exposed by the first resin, and the second resin sealing body is composed of: a second semiconductor element; a second resin covering the second semiconductor element; and a metal body, It is connected to the second semiconductor element, and a part of it is exposed by the second resin; the surface of the inner wiring exposed to the first resin sealing body and the surface of the metal body exposed to the second resin sealing body are closely molded, and the inner wiring It is electrically connected to the above metal system. The resin-sealed semiconductor device according to claim 1, wherein the metal-based bump electrode and the second semiconductor element are flip-chip connected to the inner wiring. The resin-sealed semiconductor device according to claim 1, wherein the metal-based metal wire and the second semiconductor element are connected to the inner wiring by wire bonding. The resin-sealed semiconductor device according to any one of claims 1 to 3, wherein the first resin and the second resin have different compositions. The resin-sealed semiconductor device according to any one of claims 1 to 3, wherein there are a plurality of the first semiconductor elements forming the first resin-sealed body. The resin-sealed semiconductor device according to any one of claims 1 to 3, wherein there are a plurality of the second semiconductor elements forming the second resin-sealed body. A resin-sealed semiconductor device is composed of a first resin-sealed body and a second resin-sealed body; characterized in that the first resin-sealed body is composed of the following: a first semiconductor element; and an external terminal on the first semiconductor element Separately arranged around; internal wiring connecting the surface of the first semiconductor element and the external terminal; and a first resin covering the first semiconductor element and the external terminal and the internal wiring; The back surface of the external terminal, the coating layer provided on the back surface of the first semiconductor element, and the surface of the inner wiring are exposed by the first resin, and the second resin encapsulant is composed of: second semiconductor element; second A resin covering the second semiconductor element; and a metal body connected to the second semiconductor element and partially exposed by the second resin; a surface of the inner wiring exposing the first resin sealing body and the metal body exposing the second The surface of the resin sealing body is closely molded, and the inner wiring is electrically connected to the metal system. The resin-sealed semiconductor device according to claim 7, wherein the metal-based bump electrode and the second semiconductor element are flip-chip connected to the inner wiring. The resin-sealed semiconductor device according to claim 7, wherein the metal-based metal wire and the second semiconductor element are connected to the inner wiring by wire bonding. The resin-sealed semiconductor device according to any one of claims 7 to 9, wherein the first resin and the second resin have different compositions. The resin-sealed semiconductor device according to any one of claims 7 to 9, wherein there are a plurality of the first semiconductor elements forming the first resin-sealed body. The resin-sealed semiconductor device according to any one of claims 7 to 9, wherein there are a plurality of the second semiconductor elements forming the second resin-sealed body. The resin-sealed semiconductor device according to any one of claims 7 to 9, wherein the material of the coating layer provided on the back surface of the first semiconductor element is composed of the following: an alloy material, that is, solder, gold, silver, copper, Aluminum, palladium, nickel, or organic materials, that is, single-layer materials composed of one of epoxy resins, or multilayer materials in which plural materials are laminated. A method of manufacturing a resin-sealed semiconductor device, the resin-sealed semiconductor device is composed of a first resin sealing body and a second resin sealing body; characterized in that it is composed of the following steps: a plurality of internal wiring is formed on one main surface of the substrate Engineering; the process of forming external terminals on a part of the surface of at least one or more internal wirings of the plurality of internal wirings, the surface being the surface of the internal wiring opposite to the substrate; for the first semiconductor element and the plurality of internal wirings The process of electrically connecting the wiring; the process of resin sealing the main surface side of one side of the substrate on which the plurality of internal wirings, the external terminals, and the first semiconductor element are arranged with the first resin; the first resin The surface on the opposite side of the surface in contact with the substrate is polished so that the back surface of the external terminal and the first semiconductor element The process of exposing the surface on the side opposite to the component side; the process of opening the other main surface of the substrate beyond the outer peripheral portion to expose the plurality of internal wires and the first resin; The process of electrically connecting the semiconductor element with the plurality of internal wirings; resin-sealing the second semiconductor element, the metal body, and the plurality of internal wirings with a second resin to integrate the first resin with the second resin The process of forming a resin sealing body by close molding; and slicing the above resin sealing body into a slicing process of each resin-sealed semiconductor device. The method for manufacturing a resin-sealed semiconductor device according to claim 14, wherein the substrate is an alloy material based on iron, an alloy material based on copper, an alloy material based on nickel, or an organic material one. The method for manufacturing a resin-sealed semiconductor device according to claim 14, wherein the plurality of internal wirings or external terminals formed on the substrate is one of electrolytic plating, electroless plating, or printing form. The method for manufacturing a resin-sealed semiconductor device according to any one of claims 14 to 16, wherein the material of the external terminal is composed of one of solder, gold, silver, copper, aluminum, palladium, or nickel Consist of a single layer of material, or laminate Multi-layer metal materials of plural metals. The method for manufacturing a resin-sealed semiconductor device according to any one of claims 14 to 16, wherein the other main surface of the substrate is opened beyond the outer peripheral portion to expose the plurality of inner wires and the first resin The engineering is carried out by wet etching or dry etching. The method for manufacturing a resin-sealed semiconductor device according to any one of claims 14 to 16, wherein the first semiconductor element and the second semiconductor element are provided through the first semiconductor element and the second semiconductor element, respectively The bump electrode on the top is electrically connected to the inner wiring by flip chip method. The method for manufacturing a resin-sealed semiconductor device according to any one of claims 14 to 16, wherein the first semiconductor element or the second semiconductor element is provided through the corresponding first semiconductor element or the second semiconductor The electrode pads on the device are electrically connected to the inner wiring by wire bonding. The method for manufacturing a resin-sealed semiconductor device according to any one of claims 14 to 16, wherein the process of resin sealing by the above-mentioned first and second resins is by transfer molding, casting, or extrusion Act. The method for manufacturing a resin-sealed semiconductor device according to any one of claims 14 to 16, wherein the process of slicing the above-mentioned resin sealed body is a dicing method or a cleaving method. A method of manufacturing a resin-sealed semiconductor device, the resin-sealed semiconductor device is composed of a first resin sealing body and a second resin sealing body; characterized in that it is composed of the following steps: a plurality of internal wiring is formed on one main surface of the substrate Engineering; the process of forming external terminals on a part of the surface of at least one or more of the internal wiring of the plurality of internal wirings, the surface becomes the surface of the internal wiring opposite to the substrate; the surface on the opposite side of the component side The project of electrically connecting the first semiconductor element provided with the coating layer and the plurality of internal wirings; the surface on which the plurality of internal wirings, the external terminals, and the opposite side of the element side are arranged by the first resin The process of performing resin sealing on one of the main surfaces of the substrate of the first semiconductor element of the coating layer; grinding the surface of the first resin opposite to the surface contacting the substrate to make the back surface of the external terminal and the above The process of exposing the coating layer provided on the surface of the first semiconductor element opposite to the element side; opening the other main surface of the substrate other than the outer peripheral portion to expose the plurality of inner wirings and the first resin The process of electrically connecting the second semiconductor element and the plurality of internal wirings with a metal body; resin-sealing the second semiconductor element, the metal body and the plurality of internal wirings with a second resin, so that The process of forming the resin sealing body by integrally molding the first resin and the second resin in close contact; and slicing the resin sealing body into individual resin-sealed semiconductor devices. The method for manufacturing a resin-sealed semiconductor device according to claim 23, wherein the substrate is an alloy material using iron as a base material, an alloy material using copper as a base material, an alloy material using nickel as a base material, or an organic material one. The method for manufacturing a resin-sealed semiconductor device according to claim 23, wherein the plurality of internal wirings or external terminals formed on the substrate is one of electrolytic plating, electroless plating, or printing form. The method for manufacturing a resin-sealed semiconductor device according to any one of claims 23 to 25, wherein the material of the external terminal is composed of one of solder, gold, silver, copper, aluminum, palladium, or nickel A single layer of material, or a multilayer metal material in which multiple metals are laminated. The method for manufacturing a resin-sealed semiconductor device according to any one of claims 23 to 25, wherein the other main surface of the substrate is opened beyond the outer peripheral portion to expose the plurality of inner wires and the first resin The engineering is carried out by wet etching or dry etching. The method for manufacturing a resin-sealed semiconductor device according to any one of claims 23 to 25, wherein the material of the coating layer provided on the surface of the first semiconductor element opposite to the element side is composed of the following: Materials are solder, gold, Silver, copper, aluminum, palladium, nickel or organic materials, that is, single-layer materials composed of one of epoxy resins, or multilayer materials in which plural materials are laminated. The method for manufacturing a resin-sealed semiconductor device according to any one of claims 23 to 25, wherein the first semiconductor element and the second semiconductor element are provided through the first semiconductor element and the second semiconductor element, respectively The bump electrode on the top is electrically connected to the inner wiring by flip chip method. The method for manufacturing a resin-sealed semiconductor device according to any one of claims 23 to 25, wherein the first semiconductor element or the second semiconductor element is provided through the corresponding first semiconductor element or the second semiconductor The protruding electrodes on the device are electrically connected to the inner wiring by wire bonding. The method for manufacturing a resin-sealed semiconductor device according to any one of claims 23 to 25, wherein the process of resin sealing by the above-mentioned first and second resins is by transfer molding, casting, or extrusion Act. The method for manufacturing a resin-sealed semiconductor device according to any one of claims 23 to 25, wherein the process of slicing the above-mentioned resin sealed body is a dicing method or a cleaving method.

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