TWI681445B - Method for producing a technical mask and method for patterned material application and/or removal by means of a reusable mask - Google Patents
Method for producing a technical mask and method for patterned material application and/or removal by means of a reusable mask Download PDFInfo
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Description
本發明係關於一種用於製造由板形基板構成之技術遮罩的方法。 The present invention relates to a method for manufacturing a technical mask composed of a plate-shaped substrate.
具有打開孔徑之技術遮罩係一般用以指示用於圖案化材料施加或材料移除之倍增可用裝置的術語。技術遮罩尤其包括用於模板印刷之模板或用於沈積法及移除方法之遮蔽罩。印刷模板用於模板印刷及網版印刷。在此狀況下,在框架上拉緊例如雷射切割鋼箔。出於印刷目的,藉由刮板在模板中經由孔徑壓迫印刷物質。 A technical mask with an open aperture is a term generally used to indicate a multiplied available device for patterned material application or material removal. Technical masks include, in particular, templates for stencil printing or masks for deposition and removal methods. The printing template is used for template printing and screen printing. In this case, the steel foil is stretched, for example, by laser cutting on the frame. For printing purposes, the printing substance is pressed through the aperture in the template by a squeegee.
遮蔽罩用作用於塗佈製程,例如用於濺鍍或氣相塗佈之遮罩。遮蔽罩常常用於製造顯示器(例如OLED顯示器)。在此狀況下,遮罩具有具有例如每像素50μm之大小的矩形孔徑。 The mask is used as a mask for coating processes, such as sputtering or vapor phase coating. Masks are often used to manufacture displays (eg OLED displays). In this case, the mask has a rectangular aperture having a size of, for example, 50 μm per pixel.
在雷射誘導之深蝕刻(例如WO 2014/161534 A2及WO 2016/041544 A1)期間,例如在玻璃板之狀況下,藉助於在沿著光束軸線之細長區域上方,常常在透明材料之整個厚度上方之雷射脈衝或脈衝串來修改透明 材料,使得在後續濕式化學蝕刻浴中各向異性地蝕刻修改。 During laser-induced deep etching (eg WO 2014/161534 A2 and WO 2016/041544 A1), for example in the case of glass plates, by means of an elongated area along the beam axis, often over the entire thickness of the transparent material The upper laser pulse or pulse train to modify the transparency The material allows the anisotropic etching modification in the subsequent wet chemical etching bath.
工業上,技術遮罩一般自極薄高度鋼或其他金屬薄片製造。藉助於雷射切割或光微影蝕刻方法引入對於圖案化材料施加及/或移除必需之遮罩孔徑。先前技術中已知之另一技術遮罩製造方式係電鑄。技術遮罩大體上具備極高數量個孔徑,在某些情形下,該些孔徑就形狀、位置及數目而言不受制於任何規則性。孔徑常常意欲具有>1:1之縱橫比(材料厚度與結構大小之比),因此排除所有各向同性蝕刻方法。在實際材料施加及/或移除期間,極薄遮罩必須以極平坦方式定位於待處理之材料上方或上。出於此目的,先前技術中使用之薄金屬基板經受拉伸應力以便避免變形及下陷。 Industrially, technical masks are generally manufactured from extremely thin height steel or other metal sheets. The mask aperture necessary for the application and/or removal of patterned materials is introduced by means of laser cutting or photolithographic etching methods. Another technical mask manufacturing method known in the prior art is electroforming. The technical mask generally has an extremely high number of apertures, and in some cases, these apertures are not subject to any regularity in terms of shape, position and number. The pore size is often intended to have an aspect ratio> 1:1 (ratio of material thickness to structure size), thus excluding all isotropic etching methods. During actual material application and/or removal, the very thin mask must be positioned above or on the material to be processed in a very flat manner. For this purpose, the thin metal substrate used in the prior art is subjected to tensile stress in order to avoid deformation and sag.
作為具有打開孔徑之技術遮罩之材料的玻璃相比於金屬具有一些基本優點。就此而言,玻璃具有增大之抗刮擦性、高彈性模數及更低熱膨脹;其不在負載下塑性膨脹且具有顯著地更大之化學抗性。可出於光學方法,例如出於對準而利用玻璃之透明度。不管所提及優點,玻璃並不用作用於圖案化材料施加及/或移除之技術遮罩。此係主要由於玻璃太易於斷裂而無法用作具有打開孔徑之遮罩之材料的偏見。詳言之,施加拉伸應力,正如金屬遮罩之先前技術中的例行實踐,被視為對於由玻璃構成之技術遮罩的可靠性高度關鍵。 Glass as a material for technical masks with open apertures has some basic advantages over metals. In this regard, glass has increased scratch resistance, high modulus of elasticity, and lower thermal expansion; it does not plastically expand under load and has a significantly greater chemical resistance. The transparency of the glass can be used for optical methods, for example for alignment. Regardless of the advantages mentioned, glass is not used as a technical mask for patterned material application and/or removal. This is mainly due to the prejudice that the glass is too easy to break and cannot be used as a material for a mask with an open aperture. In particular, the application of tensile stress, as is routine practice in the prior art of metal masks, is considered to be highly critical to the reliability of technical masks composed of glass.
其中藉由蝕刻在玻璃中製造結構且斷裂強度因此足夠高之一個方法是微影術。在此狀況下,塗層曝露且接著局部地打開。接著蝕刻基板以便製造所要結構。在此狀況下,塗層充當抗蝕塗層。然而,因為在抗蝕塗層打開之位置處各向同性地發生蝕刻侵蝕,所以因此不可能製造具有大的寬高比的結構。為了能夠在技術遮罩中製造高解析度結構,以微影方法圖案化鉻鎳箔片。出於此目的,已遮蔽部分區域,且蝕刻非遮蔽區域。蝕刻製程在此狀況下係各向同性的;因此,遮罩之底切發生,因此所製造結構之直徑以不受控方式增大。此等結構被稱作蝕刻唇緣。 One method in which the structure is made in glass by etching and the fracture strength is therefore sufficiently high is lithography. In this condition, the coating is exposed and then partially opened. The substrate is then etched to manufacture the desired structure. In this situation, the coating acts as a resist coating. However, because etching corrosion occurs isotropically at the position where the resist coating is opened, it is therefore impossible to manufacture a structure having a large aspect ratio. In order to be able to manufacture high-resolution structures in technical masks, the chrome-nickel foil is patterned in a lithographic method. For this purpose, parts of the area have been masked, and non-masked areas are etched. The etching process is isotropic under this condition; therefore, the undercut of the mask occurs, so the diameter of the manufactured structure increases in an uncontrolled manner. These structures are called etched lips.
本發明係基於以下目標:提供了一種供用於製造由玻璃構成之技術遮罩之顯著改良之方法之可能性。 The invention is based on the object of providing a possibility for a significantly improved method for manufacturing technical masks composed of glass.
藉助於一種根據如請求項1所述之特徵之一方法而達成此目標。可自附屬申請專利範圍收集本發明之其他組態。
This goal is achieved by means of a method according to one of the features described in
根據本發明,藉助於雷射誘導之深蝕刻製造一技術遮罩。出於此目的,至少對在該雷射誘導之深蝕刻期間所使用的雷射波長透明的一板形基板具備至少一個孔徑。藉由雷射誘導之深蝕刻製造該至少一個孔徑,其方式為使得首先使用沿著該孔徑之輪廓的一雷射光束來修改該基板,且接著在一蝕刻浴中在經修改位置處各向異性地經蝕刻該基板。 According to the invention, a technical mask is manufactured by means of laser-induced deep etching. For this purpose, at least one plate-shaped substrate transparent to the laser wavelength used during the laser-induced deep etching is provided with at least one aperture. The at least one aperture is manufactured by laser-induced deep etching in such a way that the substrate is first modified using a laser beam along the outline of the aperture, and then directional at the modified position in an etching bath The substrate is anisotropically etched.
根據本發明,技術遮罩應理解為係例如用於圖案化材料施加或材料移除之倍增可用裝置。 According to the invention, a technical mask is understood to be a multiply-available device for patterned material application or material removal, for example.
根據本發明,由於各向異性蝕刻侵蝕,有可能達成一所要邊緣角,詳言之以一預定孔徑角達成,此證明為詳言之在例如出於濺鍍製程而將玻璃模板用作遮蔽罩期間尤其有利。 According to the present invention, due to anisotropic etching, it is possible to achieve a desired edge angle, in particular at a predetermined aperture angle, which proves to be detailed in using a glass template as a mask for, for example, a sputtering process The period is particularly favorable.
本發明係基於以下驚人洞察:已藉助於雷射誘導之深蝕刻將孔徑引入至其中的玻璃基板可實際上用作用於圖案化材料施加及/或移除之材料。在此處尤其驚人的是以下洞察:以此方式製造之一玻璃基板甚至以在先前技術中例行實踐之方式承受一拉伸應力。 The invention is based on the surprising insight that glass substrates into which apertures have been introduced by means of laser-induced deep etching can actually be used as materials for patterned material application and/or removal. What is particularly striking here is the insight that a glass substrate manufactured in this way even withstands a tensile stress in a manner routinely practiced in the prior art.
藉由根據本發明之方法,可藉助於雷射輻射極準確地控制各向異性地蝕刻之分離表面或切口的形狀,且可避免蝕刻唇緣之形成。 By the method according to the invention, the shape of the anisotropically etched separation surface or cut can be controlled very accurately by means of laser radiation, and the formation of etched lips can be avoided.
在一第二製程步驟中,執行至少一個蝕刻步驟,其中進展,詳言之例如藉由氫氟酸之蝕刻侵蝕的速率,取決於修改之具體屬性。亦可首先例 如藉由在一側上以抗蝕塗層塗佈該基板來將蝕刻侵蝕限於一側。 In a second process step, at least one etching step is performed, wherein the progress, in particular the rate of etching erosion by hydrofluoric acid, for example, depends on the specific properties of the modification. First case The etching erosion is limited to one side by coating the substrate with a resist coating on one side.
在另一蝕刻步驟中,有可能例如在切割邊緣處製造半徑。 In another etching step, it is possible to make a radius, for example, at the cutting edge.
作為實例,以下濕式化學溶液可被實現為蝕刻介質: As an example, the following wet chemical solution can be implemented as an etching medium:
氫氟酸: Hydrofluoric acid:
- 濃度:1至20% -Concentration: 1 to 20%
- 溫度:5至40℃ -Temperature: 5 to 40°C
- 第二酸:H2SO4、HCl、H3PO4 -Second acid: H 2 SO 4 , HCl, H 3 PO 4
氫氧化鉀溶液: Potassium hydroxide solution:
- 濃度:10至60% -Concentration: 10 to 60%
- 溫度:85至160℃ -Temperature: 85 to 160°C
相比於根據先前技術之方法,其迄今尚未能夠達成由玻璃構成的一技術遮罩,玻璃因為處理始終產生不可避免之微裂縫而具有一充足斷裂強度且用作一模板,該模板出於使用目的而夾持至一框架中且在塗刷期間經受高機械負載,且因此被排除在外,根據本發明而避免了此類微裂縫。 Compared with the method according to the prior art, it has hitherto not been able to achieve a technical mask composed of glass, which has sufficient fracture strength and is used as a template due to the inevitable micro-cracks caused by the processing. For the purpose of being clamped into a frame and subjected to high mechanical loads during painting, and therefore excluded, such micro-cracks are avoided according to the invention.
將玻璃用作技術遮罩之材料使得能夠更可靠地執行材料施加及/或移除之製程。因此可達成根據本發明之以下其他優點: The use of glass as a material for technical masks enables more reliable material application and/or removal processes. Therefore, the following other advantages according to the present invention can be achieved:
- 更高準確性(無塑性變形) -Higher accuracy (no plastic deformation)
- 更大硬度,亦即,更抗研磨 -Greater hardness, that is, more resistant to grinding
- 熱膨脹類矽、陶瓷 -Thermal expansion silicon, ceramic
- 更大化學及機械抗性 -Greater chemical and mechanical resistance
- 由於透明屬性而藉由光學方法簡化對準 -Simplified alignment by optical method due to transparency
1‧‧‧遮罩 1‧‧‧Mask
2‧‧‧基板 2‧‧‧ substrate
3‧‧‧輪廓 3‧‧‧Outline
4‧‧‧作業線 4‧‧‧Operation line
5‧‧‧抗蝕塗層 5‧‧‧Anti-corrosion coating
6‧‧‧負荷釋放孔徑 6‧‧‧Load release aperture
7‧‧‧蝕刻唇緣 7‧‧‧Etched lips
8‧‧‧切口 8‧‧‧cut
s‧‧‧厚度 s‧‧‧thickness
本發明提供各種具體實例。為了進一步澄清其基本原理,在圖 式中說明且在下文描述該些具體實例中之一者。在圖式中:圖1展示藉由根據本發明之方法製造之技術遮罩的平面視圖;圖2展示蝕刻處理之後穿過根據本發明所製造之孔徑的橫截面;圖3展示蝕刻處理之後穿過藉由根據先前技術之方法所製造之孔徑的橫截面。 The present invention provides various specific examples. In order to further clarify its basic principles, in the figure One of these specific examples is illustrated in the formula and described below. In the drawings: FIG. 1 shows a plan view of a technical mask manufactured by the method according to the invention; FIG. 2 shows a cross-section through an aperture made according to the invention after etching treatment; FIG. 3 shows it through after etching treatment Cross-section through an aperture made by a method according to the prior art.
在下文參考圖1及圖2更詳細地解釋根據本發明之用於製造由板形基板2構成之技術遮罩1的方法。板形基板2對用於雷射誘導之深蝕刻的雷射波長至少透明。板形基板可由例如玻璃、藍寶石或矽組成。
The method for manufacturing the
藉助於藉由沿著預定義作業線4的雷射之脈衝的雷射輻射(圖中未示),修改具有幾百微米之厚度s的板形基板2,以用於分離詳言之閉合輪廓3。出於切割輪廓3的目的,注意確保雷射之脈衝沿著預定義作業線4定位且所得修改中心之間的距離係僅數微米。作業線中的呈連接幅材之形式的局部中斷、所謂的斷裂突片確保待分離之輪廓3甚至在以蝕刻溶液處理之後仍連接至板形基板2。
By means of laser radiation (not shown) by pulses of laser light along a
在後續步驟中,以蝕刻溶液處理以此方式預處理之板形基板2,該蝕刻溶液諸如氫氟酸(HF)或氫氧化鉀(KOH),因此均質且各向同性地蝕刻玻璃基板2之未經修改區域。經修改區域相對於基板2之未經處理區域各向異性地起反應,使得首先,定向凹陷在經處理位置處形成,直至最後,基板2之材料在此位置處完全溶解為止。蝕刻步驟通常耗費數分鐘至數小時,此取決於待使用之基板2、其厚度s及蝕刻溶液之濃度。
In the subsequent steps, the plate-shaped
在此時間點,由切口8分離之輪廓切割佈局由斷裂突片排他地固持於板形基板2之其餘部分中,使得在浸沒於稀釋或中和溶液中及後續乾燥之
後,所要佈局可與殘餘基板2分離,且結果產生已加工技術遮罩1。
At this point in time, the outline cutting layout separated by the
孔徑可相對於該些表面中之一者在橫截面中具有從>5°到>35°之孔徑角。此可簡化以印刷物質塗佈、自待印刷表面剝離或塗佈製程,或可在材料施加或移除期間提高解析度。 The aperture may have an aperture angle from >5° to >35° in cross section relative to one of the surfaces. This can simplify the process of coating with a printing substance, peeling off from the surface to be printed or coating, or can increase the resolution during material application or removal.
此外,根據本發明,若基板2之一側由抗蝕塗層5保護,如圖2中所說明,則亦有可能在一側上蝕刻板形基板2。作為實例,在此狀況下使用鉻層或黏著膜。在一側上蝕刻使得有可能製造在橫截面中具有不同高度剖面之孔徑。
Furthermore, according to the present invention, if one side of the
黏著膜可另外夾持於框架中,此尤其簡化對具有小於100μm之厚度s之薄玻璃的處置。按小於100μm之板形基板2的厚度s,基板2以類似於塑料膜之方式,且因此無法固定至蝕刻蝕刻槽中之習知固持器中。
The adhesive film can additionally be clamped in the frame, which in particular simplifies the handling of thin glass with a thickness s of less than 100 μm. At a thickness s of the plate-shaped
若鉻層用作抗蝕塗層5,則輪廓3亦可完全切斷。該些輪廓接著貼合鉻層且不會下降至蝕刻槽中。在移除鉻層期間,詳言之在第二蝕刻浴中,同樣地移除切口部分,且不必使切口部分斷裂。
If the chromium layer is used as the resist
在使用技術遮罩1期間,技術遮罩1較佳地夾持至框架中。在此狀況下,框架較佳地具備用於夾持遮罩之裝置。在夾持期間,技術遮罩1經受高機械負載。高機械負載可由適合於減輕由於變形發生之張應力的負荷釋放結構6補償。可藉助於此等結構達成之總變形顯著地大於材料之斷裂伸長率,而甚至不會僅局部地超出斷裂伸長率。可例如以開槽方式在基板2之邊緣區域中製造此類負荷釋放結構6。
During use of the
技術遮罩可至少局部地具備金屬層。金屬層可例如用以以磁性方式緊固遮罩。金屬層另外使得用作光學遮罩成為可能。 The technical mask may be provided with a metal layer at least partially. The metal layer can be used, for example, to fasten the mask magnetically. The metal layer additionally makes it possible to serve as an optical mask.
為了獲得較佳理解,基於穿過以此方式製造之基板2的橫截面,圖3說明藉助於根據先前技術之方法的蝕刻處理。顯而易見,由於具有均勻傳
播之點狀修改及後續各向同性蝕刻移除,在此狀況下產生具有未經界定孔徑寬度之所謂蝕刻唇緣7。因為蝕刻製程各向同性地繼續進行,亦即,蝕刻速率在所有方向上相同,所以發生抗蝕塗層5之底切,因此所製造結構之直徑以不受控方式增大。根據本發明,此可藉助於各向異性蝕刻移除得以避免。
For a better understanding, based on the cross section through the
出於將技術遮罩用於材料施加或材料移除製程之目的,準確定位係必需的。藉由將透明材料用作板形基板,光學定位係可能的,此可例如基於表面結構、切口或局部塗層得以實現。 For the purpose of using technical masks for material application or material removal processes, accurate positioning is necessary. By using a transparent material as a plate-shaped substrate, optical positioning is possible, which can be achieved, for example, based on surface structures, cutouts, or partial coatings.
1‧‧‧遮罩 1‧‧‧Mask
2‧‧‧基板 2‧‧‧ substrate
3‧‧‧輪廓 3‧‧‧Outline
4‧‧‧作業線 4‧‧‧Operation line
6‧‧‧負荷釋放孔徑 6‧‧‧Load release aperture
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US20030101932A1 (en) * | 2001-12-05 | 2003-06-05 | Samsung Nec Mobile Display Co., Ltd. | Tension mask assembly for use in vacuum deposition of thin film of organic electroluminescent device |
JP2005190857A (en) * | 2003-12-26 | 2005-07-14 | Seiko Epson Corp | Mask, manufacturing method of mask, manufacturing method of organic electroluminescent device, manufacturing device of organic electroluminescent device, organic electroluminescent device, and electronic equipment |
US20160059359A1 (en) * | 2013-04-04 | 2016-03-03 | Lpkf Laser & Electronics Ag | Method and device for providing through-openings in a substrate and a substrate produced in said manner |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030101932A1 (en) * | 2001-12-05 | 2003-06-05 | Samsung Nec Mobile Display Co., Ltd. | Tension mask assembly for use in vacuum deposition of thin film of organic electroluminescent device |
JP2005190857A (en) * | 2003-12-26 | 2005-07-14 | Seiko Epson Corp | Mask, manufacturing method of mask, manufacturing method of organic electroluminescent device, manufacturing device of organic electroluminescent device, organic electroluminescent device, and electronic equipment |
US20160059359A1 (en) * | 2013-04-04 | 2016-03-03 | Lpkf Laser & Electronics Ag | Method and device for providing through-openings in a substrate and a substrate produced in said manner |
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