TWI675125B - Etching liquid, replenishing liquid, and method of forming copper wiring - Google Patents

Etching liquid, replenishing liquid, and method of forming copper wiring Download PDF

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TWI675125B
TWI675125B TW107116147A TW107116147A TWI675125B TW I675125 B TWI675125 B TW I675125B TW 107116147 A TW107116147 A TW 107116147A TW 107116147 A TW107116147 A TW 107116147A TW I675125 B TWI675125 B TW I675125B
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membered ring
compound
group
heteroaromatic
etching solution
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TW107116147A
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TW201900929A (en
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浜口仁美
高垣愛
菱川翔太
金美花
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日商Mec股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067Etchants
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/18Acidic compositions for etching copper or alloys thereof
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H05K2203/0789Aqueous acid solution, e.g. for cleaning or etching

Abstract

本發明的蝕刻液為銅的蝕刻液;並且前述蝕刻液為含有酸、氧化性金屬離子、具有五元環的雜芳香族化合物(A)、以及選自由具有五元環至六元環的雜芳香族化合物(B1)及烷醇胺(B2)所組成的群組中的一種以上的化合物的水溶液;前述(A)為不具有羥烷基,且具有一個以上的氮原子作為構成環的雜原子的雜芳香族化合物;前述(B1)為具有一個以上的氮原子作為構成環的雜原子,且經含有碳數1以上5以下的羥烷基的取代基所取代的雜芳香族化合物;前述(B2)為具有通式(1):R1-N(R2)-R3的化合物(通式(1)中,R1及R2獨立地表示烷基或碳數1以上8以下的羥烷基,R3表示氫原子、烷基或碳數1以上8以下的羥烷基,且R1至R3中至少一個為前述羥烷基)。 The etchant of the present invention is an etchant of copper; and the aforementioned etchant is an acid, an oxidizing metal ion, a heteroaromatic compound (A) having a five-membered ring, and a member selected from the group consisting of a heterocyclic compound having a five- to six-membered ring. An aqueous solution of one or more compounds in the group consisting of an aromatic compound (B1) and an alkanolamine (B2); the aforementioned (A) is a heterocyclic ring having no hydroxyalkyl group and having one or more nitrogen atoms as a ring; Atom heteroaromatic compound; the aforementioned (B1) is a heteroaromatic compound having one or more nitrogen atoms as a heteroatom constituting a ring and substituted with a substituent containing a hydroxyalkyl group having 1 to 5 carbon atoms; (B2) is a compound having the general formula (1): R 1 -N (R 2 ) -R 3 (In the general formula (1), R 1 and R 2 independently represent an alkyl group or a carbon number of 1 to 8 A hydroxyalkyl group, R 3 represents a hydrogen atom, an alkyl group, or a hydroxyalkyl group having 1 to 8 carbon atoms, and at least one of R 1 to R 3 is the aforementioned hydroxyalkyl group).

Description

蝕刻液、補給液以及銅配線的形成方法    Etching liquid, replenishing liquid, and method for forming copper wiring   

本發明關於一種銅的蝕刻液及其補給液、以及銅配線的形成方法。 The present invention relates to a copper etching solution, a replenishing solution thereof, and a method for forming a copper wiring.

在印刷配線板的生產中,在利用光刻法(photo ecthing method)形成銅配線圖案的情況下,一直使用氯化鐵系蝕刻液、氯化銅系蝕刻液、鹼性蝕刻液等作為蝕刻液。使用這些蝕刻液時,存在被稱為側向蝕刻(side etching)的抗蝕劑下的銅從配線圖案側面溶解的情況。即,本來期望通過被抗蝕劑覆蓋而不被蝕刻除去的部分(即,銅配線部分)被蝕刻液除去,而產生寬度從該銅配線的底部到頂部逐漸變細的現象。特別在銅配線圖案微細的情況下,必須盡可能減少這樣的側向蝕刻。為了抑制該側向蝕刻,提出了調配有作為雜芳香五元環化合物的唑化合物的蝕刻液。 In the production of printed wiring boards, when a copper wiring pattern is formed by a photo ecthing method, iron chloride-based etching solutions, copper chloride-based etching solutions, and alkaline etching solutions have been used as etching solutions. . When these etching solutions are used, copper under a resist called side etching may be dissolved from the side of the wiring pattern. That is, it is expected that a portion covered with a resist and not removed by etching (that is, a copper wiring portion) is removed by an etchant, and a phenomenon that the width gradually decreases from the bottom to the top of the copper wiring is generated. Especially when the copper wiring pattern is fine, it is necessary to reduce such lateral etching as much as possible. In order to suppress this lateral etching, an etching solution prepared with an azole compound as a heteroaromatic five-membered ring compound has been proposed.

[先前技術文獻]     [Prior technical literature]     [專利文獻]     [Patent Literature]    

專利文獻1:日本特開2007-332430號公報。 Patent Document 1: Japanese Patent Application Laid-Open No. 2007-332430.

專利文獻2:日本特開2005-330572號公報。 Patent Document 2: Japanese Patent Application Laid-Open No. 2005-330572.

專利文獻3:日本特開2009-79284號公報。 Patent Document 3: Japanese Patent Application Laid-Open No. 2009-79284.

專利文獻4:日本特開2009-221596號公報。 Patent Document 4: Japanese Patent Application Laid-Open No. 2009-221596.

關於上述的專利文獻中公開的蝕刻液,可期待一定的側向蝕刻抑制功效。但是,隨著市場上精細化要求的增強,需求一種具有側向蝕刻的抑制功效並且銅配線的精細圖案形成優異的蝕刻液。 Regarding the etchant disclosed in the above-mentioned patent document, a certain lateral etching suppression effect can be expected. However, with the increase in the demand for refinement on the market, there is a need for an etchant that has the effect of suppressing lateral etching and that forms fine patterns of copper wiring.

本發明是鑒於上述實際情況而成,提供一種側向蝕刻的抑制功效高且銅配線的精細圖案形成優異的蝕刻液及其補給液、以及銅配線的形成方法。 The present invention has been made in view of the above-mentioned circumstances, and provides an etching solution with high suppression effect of lateral etching, excellent fine pattern formation of copper wiring, a replenishing solution thereof, and a method for forming a copper wiring.

本發明關於一種蝕刻液,該蝕刻液為銅的蝕刻液。並且上述蝕刻液為含有酸、氧化性金屬離子、具有五元環的雜芳香族化合物(A)、以及選自由具有五元環至六元環的雜芳香族化合物(B1)及烷醇胺(B2)所組成的群組中的一種以上的化合物的水溶液。上述具有五元環的雜芳香族化合物(A)為不具有羥烷基,且具有一個以上的氮原子作為構成環的雜原子的雜芳香族化合物。上述具有五元環至六元環的雜芳香族化合物(B1)為具有一個以上的氮原子作為構成環的雜原子,且經含有碳數1以上5以下的羥烷基的取代基所 取代的雜芳香族化合物。上述烷醇胺(B2)為具有通式:R1-N(R2)-R3的化合物(通式中,R1及R2獨立地表示烷基或碳數1以上8以下的羥烷基,R3表示氫原子、烷基或碳數1以上8以下的羥烷基,且R1至R3中至少一個為上述羥烷基)。 The invention relates to an etching solution, which is an etching solution for copper. The etching solution contains an acid, an oxidizing metal ion, a heteroaromatic compound (A) having a five-membered ring, and a compound selected from a heteroaromatic compound (B1) having a five- to six-membered ring and an alkanolamine ( B2) An aqueous solution of one or more compounds in the group. The above-mentioned five-membered heteroaromatic compound (A) is a heteroaromatic compound which does not have a hydroxyalkyl group and has one or more nitrogen atoms as heteroatoms constituting the ring. The above-mentioned heteroaromatic compound (B1) having a five-membered ring to a six-membered ring is a heteroatom having one or more nitrogen atoms and is substituted with a substituent containing a hydroxyalkyl group having 1 to 5 carbon atoms. Heteroaromatic compounds. The alkanolamine (B2) is a compound having the general formula: R 1 -N (R 2 ) -R 3 (in the general formula, R 1 and R 2 independently represent an alkyl group or a hydroxyalkane having 1 to 8 carbon atoms) R 3 represents a hydrogen atom, an alkyl group, or a hydroxyalkyl group having 1 to 8 carbon atoms, and at least one of R 1 to R 3 is the above-mentioned hydroxyalkyl group).

本發明關於一種補給液,該補給液是在連續或反復使用上述蝕刻液時添加到上述蝕刻液中;並且上述補給液為含有上述具有五元環的雜芳香族化合物(A)、以及上述選自由具有五元環至六元環的雜芳香族化合物(B1)及上述烷醇胺(B2)所組成的群組中的一種以上的化合物的水溶液。 The present invention relates to a replenisher which is added to the etchant when the etchant is used continuously or repeatedly; and the replenisher is a heteroaromatic compound (A) containing the five-membered ring and the optional An aqueous solution of one or more compounds from the group consisting of a heteroaromatic compound (B1) having a five-membered ring to a six-membered ring and the alkanolamine (B2) is free.

本發明關於一種銅配線的形成方法,該銅配線的形成方法對銅層中的未被抗蝕劑覆蓋的部分進行蝕刻;並且上述銅配線的形成方法使用上述蝕刻液進行蝕刻。 The present invention relates to a method for forming a copper wiring. The method for forming a copper wiring etches a portion of a copper layer that is not covered by a resist; and the method for forming a copper wiring uses the above-mentioned etching solution to etch.

此外,上述本發明中的「銅」可僅由銅構成,也可由銅合金構成。另外,本說明書中,「銅」表示銅或銅合金。 In addition, the "copper" in the said invention may consist only of copper, and may consist of a copper alloy. In addition, in this specification, "copper" means copper or a copper alloy.

本發明的蝕刻液含有酸、氧化性金屬離子、具有五元環的雜芳香族化合物(A)、以及選自由具有五元環至六元環的雜芳香族化合物(B1)及烷醇胺(B2)所組成的群組中的一種以上的化合物。可認為,上述選自由具有五元環至六元環的雜芳香族化合物(B1)及烷醇胺(B2)所組成的群組中的 一種以上的化合物能夠捕捉隨著蝕刻進行而產生的亞銅離子,垂直方向的蝕刻快速進行,因此能提供一種側向蝕刻的抑制功效高且銅配線的精細圖案形成優異的蝕刻液及其補給液、以及銅配線的形成方法。 The etching solution of the present invention contains an acid, an oxidizing metal ion, a heteroaromatic compound (A) having a five-membered ring, and a member selected from a heteroaromatic compound (B1) having a five- to six-membered ring and an alkanolamine ( B2) one or more compounds in the group. It is considered that one or more compounds selected from the group consisting of a heteroaromatic compound (B1) having a five-membered ring to a six-membered ring and an alkanolamine (B2) can capture sub-atoms generated as the etching progresses. Copper ions are etched quickly in the vertical direction. Therefore, it is possible to provide an etching solution with high suppression effect of side etching, excellent pattern formation of copper wirings, a replenishing solution thereof, and a method for forming copper wirings.

1‧‧‧基板 1‧‧‧ substrate

2‧‧‧銅配線 2‧‧‧ Copper wiring

3‧‧‧光阻樹脂 3‧‧‧Photoresist

T‧‧‧銅配線的底部的寬度 T‧‧‧ the width of the bottom of the copper wiring

B‧‧‧銅配線的頂部的寬度 B‧‧‧ Width of the top of the copper wiring

圖1表示利用本發明的蝕刻液進行蝕刻後的銅配線的一例的剖面圖。 FIG. 1 is a cross-sectional view showing an example of a copper wiring after being etched by the etching solution of the present invention.

<銅的蝕刻液>     <Copper Etching Solution>    

本發明的銅的蝕刻液為含有酸、氧化性金屬離子、具有五元環的雜芳香族化合物(A)、以及選自由具有五元環至六元環的雜芳香族化合物(B1)及烷醇胺(B2)所組成的群組中的一種以上的化合物的水溶液。上述具有五元環的雜芳香族化合物(A)為不具有羥烷基,且具有一個以上的氮原子作為構成環的雜原子的雜芳香族化合物。上述具有五元環至六元環的雜芳香族化合物(B1)為具有一個以上的氮原子作為構成環的雜原子,且經含有碳數1以上5以下的羥烷基的取代基所取代的雜芳香族化合物。上述烷醇胺(B2)為具有通式(1):R1-N(R2)-R3的化合物(通式(1)中,R1及R2獨立地表示烷基或碳數1以上8以下的羥烷基,R3表示氫原子、烷基或碳數1以上8以下的羥烷基,且R1至R3中至少一個為上述羥烷基)。 The copper etching solution of the present invention contains an acid, an oxidizing metal ion, a heteroaromatic compound (A) having a five-membered ring, and a heteroaromatic compound (B1) selected from a five-membered ring to a six-membered ring, and an alkane. An aqueous solution of one or more compounds in the group consisting of an alcohol amine (B2). The above-mentioned five-membered heteroaromatic compound (A) is a heteroaromatic compound which does not have a hydroxyalkyl group and has one or more nitrogen atoms as heteroatoms constituting the ring. The above-mentioned heteroaromatic compound (B1) having a five-membered ring to a six-membered ring is a heteroatom having one or more nitrogen atoms and is substituted with a substituent containing a hydroxyalkyl group having 1 to 5 carbon atoms. Heteroaromatic compounds. The alkanolamine (B2) is a compound having the general formula (1): R 1 -N (R 2 ) -R 3 (in the general formula (1), R 1 and R 2 independently represent an alkyl group or a carbon number 1 A hydroxyalkyl group of 8 or less, R 3 represents a hydrogen atom, an alkyl group, or a hydroxyalkyl group of 1 to 8 carbons, and at least one of R 1 to R 3 is the hydroxyalkyl group described above).

<酸>     <Acid>    

本發明的酸能夠從無機酸及有機酸中適宜選擇。作為上述無機酸,例如可為:硫酸、鹽酸、硝酸、磷酸、氫溴酸等。作為上述有機酸,例如可為:甲酸、乙酸、草酸、馬來酸、苯甲酸、乙醇酸等。上述酸中,從蝕刻速度的穩定性及銅的溶解穩定性的觀點來看,較佳為鹽酸。上述酸只要使用至少一種即可,能夠組合使用兩種以上。 The acid of the present invention can be appropriately selected from inorganic acids and organic acids. Examples of the inorganic acid include sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, and hydrobromic acid. Examples of the organic acid include formic acid, acetic acid, oxalic acid, maleic acid, benzoic acid, and glycolic acid. Among the above acids, hydrochloric acid is preferred from the viewpoints of stability of the etching rate and stability of the dissolution of copper. As long as at least one kind of the acid is used, two or more kinds can be used in combination.

上述酸的濃度較佳為7g/L至180g/L,更佳為18g/L至110g/L。在酸的濃度為7g/L以上的情況下,蝕刻速度變快,因此能夠快速蝕刻銅。另外,在酸的濃度為180g/L以下的情況下,維持銅的溶解穩定性,並且能夠抑制作業環境的劣化。 The concentration of the aforementioned acid is preferably 7 g / L to 180 g / L, and more preferably 18 g / L to 110 g / L. When the acid concentration is 7 g / L or more, the etching rate becomes faster, and thus copper can be quickly etched. In addition, when the acid concentration is 180 g / L or less, the dissolution stability of copper is maintained, and deterioration of the working environment can be suppressed.

<氧化性金屬離子>     <Oxidizing metal ion>    

本發明的氧化性金屬離子只要為能夠將金屬銅氧化的金屬離子即可,例如可為銅離子、鐵離子等。從抑制側向蝕刻的觀點及蝕刻速度的穩定性的觀點來看,較佳為使用銅離子作為氧化性金屬離子。上述氧化性金屬離子只要使用至少一種即可,能夠組合使用兩種以上。 The oxidizing metal ion of the present invention may be a metal ion capable of oxidizing metallic copper, and may be, for example, copper ion, iron ion, or the like. From the viewpoint of suppressing lateral etching and the stability of the etching rate, it is preferable to use copper ions as the oxidizing metal ions. As long as at least one kind of the oxidizing metal ion is used, two or more kinds can be used in combination.

上述氧化性金屬離子能夠通過調配氧化性金屬離子源而含有在蝕刻液中。例如在使用銅離子源作為氧化性金屬 離子源的情況下,作為該銅離子源的具體例,可為:氯化銅、硫酸銅、溴化銅、有機酸的銅鹽、氫氧化銅等。例如在使用鐵離子源作為氧化性金屬離子源的情況,作為該鐵離子源的具體例,可為:氯化鐵、溴化鐵、碘化鐵、硫酸鐵、硝酸鐵、有機酸的鐵鹽等。 The oxidizing metal ion can be contained in an etching solution by blending an oxidizing metal ion source. For example, when a copper ion source is used as the oxidizing metal ion source, specific examples of the copper ion source include copper chloride, copper sulfate, copper bromide, copper salts of organic acids, and copper hydroxide. For example, when an iron ion source is used as the oxidizing metal ion source, specific examples of the iron ion source include iron chloride, iron bromide, iron iodide, iron sulfate, iron nitrate, and iron salts of organic acids. Wait.

上述氧化性金屬離子的濃度較佳為10g/L至300g/L,更佳為10g/L至250g/L,進而較佳為15g/L至220g/L,進而更佳為30g/L至200g/L。在氧化性金屬離子的濃度為10g/L以上的情況下,蝕刻速度變快,因此能夠快速蝕刻銅。另外,在氧化性金屬離子的濃度為300g/L以下的情況下,維持銅的溶解穩定性。 The concentration of the oxidizing metal ion is preferably 10 g / L to 300 g / L, more preferably 10 g / L to 250 g / L, still more preferably 15 g / L to 220 g / L, and even more preferably 30 g / L to 200 g. / L. When the concentration of the oxidizing metal ion is 10 g / L or more, since the etching rate is increased, copper can be etched quickly. In addition, when the concentration of the oxidizing metal ion is 300 g / L or less, the dissolution stability of copper is maintained.

<具有五元環的雜芳香族化合物(A)>     <Heteroaromatic compound (A) having a five-membered ring>    

本發明的具有五元環的雜芳香族化合物(A)為不具有羥烷基,且具有一個以上的氮原子作為構成環的雜原子的雜芳香族化合物。上述具有五元環的雜芳香族化合物(A)只要使用至少一種即可,能夠組合使用兩種以上。 The heteroaromatic compound (A) having a five-membered ring of the present invention is a heteroaromatic compound having no hydroxyalkyl group and having one or more nitrogen atoms as a heteroatom constituting the ring. As long as the heteroaromatic compound (A) having a five-membered ring described above is used at least one kind, two or more kinds can be used in combination.

從結構穩定性及對酸性液的溶解性的觀點來看,上述具有五元環的雜芳香族化合物(A)較佳為僅具有氮作為構成環的雜原子。作為此種具有五元環的雜芳香族化合物(A),例如可為:具有咪唑骨架的咪唑化合物、具有吡唑骨架的吡唑化合物、具有三唑骨架的三唑化合物、具有四唑 骨架的四唑化合物等唑化合物。 From the viewpoints of structural stability and solubility in an acidic liquid, the above-mentioned heteroaromatic compound (A) having a five-membered ring is preferably a heteroatom having only nitrogen as a ring. Examples of such a five-membered heteroaromatic compound (A) include an imidazole compound having an imidazole skeleton, a pyrazole compound having a pyrazole skeleton, a triazole compound having a triazole skeleton, and a Tetrazole compounds such as azole compounds.

作為上述咪唑化合物,例如可為:咪唑、2-甲基咪唑、2-十一烷基-4-甲基咪唑、2-苯基咪唑等咪唑類,苯並咪唑、2-甲基苯並咪唑、2-十一烷基苯並咪唑、2-苯基苯並咪唑、2-巰基苯並咪唑等苯並咪唑類等。這些化合物中,較佳為苯並咪唑。 Examples of the imidazole compound include imidazoles such as imidazole, 2-methylimidazole, 2-undecyl-4-methylimidazole, and 2-phenylimidazole, and benzimidazole and 2-methylbenzimidazole. , Benzimidazoles such as 2-undecyl benzimidazole, 2-phenyl benzimidazole, 2-mercaptobenzimidazole, and the like. Among these compounds, benzimidazole is preferable.

作為上述吡唑化合物,例如可為:吡唑、3-甲基吡唑、1-乙基吡唑、3-氨基吡唑、3,5-二甲基吡唑、3-氨基-1-甲基吡唑、4-氯吡唑、1,3,5-三甲基吡唑等。 Examples of the pyrazole compound include pyrazole, 3-methylpyrazole, 1-ethylpyrazole, 3-aminopyrazole, 3,5-dimethylpyrazole, and 3-amino-1-methyl Pyridazole, 4-chloropyrazole, 1,3,5-trimethylpyrazole and the like.

作為上述三唑化合物,例如可為:1,2,3-三唑、1,2,4-三唑、5-苯基-1,2,4-三唑、5-氨基-1,2,4-三唑、苯並三唑、1-甲基-苯並三唑、甲苯基三唑等。這些化合物中,較佳為苯並三唑。 Examples of the triazole compound include 1,2,3-triazole, 1,2,4-triazole, 5-phenyl-1,2,4-triazole, and 5-amino-1,2, 4-triazole, benzotriazole, 1-methyl-benzotriazole, tolyltriazole and the like. Among these compounds, benzotriazole is preferable.

作為上述四唑化合物,例如可為:1H-四唑、5-氨基-1H-四唑、5-甲基-1H-四唑、5-苯基-1H-四唑、5-巰基-1H-四唑、1-苯基-5-巰基-1H-四唑、1-環己基-5-巰基-1H-四唑、5,5'-聯-1H-四唑,及這些化合物的銨鹽或鈉鹽、鋅鹽、鈣鹽、鉀鹽等金屬鹽等。 Examples of the tetrazole compound include 1H-tetrazole, 5-amino-1H-tetrazole, 5-methyl-1H-tetrazole, 5-phenyl-1H-tetrazole, and 5-mercapto-1H- Tetrazole, 1-phenyl-5-mercapto-1H-tetrazole, 1-cyclohexyl-5-mercapto-1H-tetrazole, 5,5'-bi-1H-tetrazole, and ammonium salts of these compounds or Metal salts such as sodium salt, zinc salt, calcium salt, potassium salt, etc.

上述唑化合物中,從底切(under cut)的抑制功效高的 觀點來看,較佳為四唑化合物,更佳為1H-四唑、5-苯基-1H-四唑、5-氨基-1H-四唑、5,5'-聯-1H-四唑及這些化合物的銨鹽或金屬鹽等,進而較佳為1H-四唑、5-氨基-1H-四唑及這些化合物的銨鹽或金屬鹽。推測這些四唑化合物能夠從導體圖案的頂部到側面薄且均勻地形成保護皮膜。 Among the above-mentioned azole compounds, from the viewpoint of high undercut inhibitory effects, tetrazole compounds are preferred, and 1H-tetrazole, 5-phenyl-1H-tetrazole, and 5-amino- 1H-tetrazole, 5,5'-bi-1H-tetrazole, and ammonium salts or metal salts of these compounds, and more preferably 1H-tetrazole, 5-amino-1H-tetrazole, and ammonium salts of these compounds Or metal salt. It is estimated that these tetrazole compounds can form a protective film thinly and uniformly from the top to the side of the conductor pattern.

上述具有五元環的雜芳香族化合物(A)的濃度較佳為0.1g/L至50g/L,更佳為0.1g/L至15g/L,進而較佳為0.2g/L至10g/L。若上述具有五元環的雜芳香族化合物(A)的濃度為0.1g/L以上,則能夠可靠地抑制底切。另一方面,在上述具有五元環的雜芳香族化合物(A)的濃度為50g/L以下的情況下,能夠防止蝕刻速度的降低,且能夠將應蝕刻的部分可靠地蝕刻,因此能夠防止產生短路(絕緣不良)。 The concentration of the five-membered heteroaromatic compound (A) is preferably 0.1 g / L to 50 g / L, more preferably 0.1 g / L to 15 g / L, and still more preferably 0.2 g / L to 10 g / L. L. When the concentration of the five-membered heteroaromatic compound (A) is 0.1 g / L or more, undercuts can be reliably suppressed. On the other hand, when the concentration of the five-membered heteroaromatic compound (A) is 50 g / L or less, it is possible to prevent a decrease in the etching rate and reliably etch a portion to be etched, so it is possible to prevent A short circuit (poor insulation) occurs.

<具有五元環至六元環的雜芳香族化合物(B1)>     <Heteroaromatic compound (B1) having a five-membered ring to a six-membered ring>    

本發明的具有五元環至六元環的雜芳香族化合物(B1)為具有一個以上的氮原子作為構成環的雜原子,且經含有碳數1以上5以下的羥烷基的取代基所取代的雜芳香族化合物。上述具有五元環至六元環的雜芳香族化合物(B1)能夠組合使用兩種以上。 The heteroaromatic compound (B1) having a five-membered ring to a six-membered ring of the present invention is a heteroatom having one or more nitrogen atoms as a ring, and is substituted by a substituent containing a hydroxyalkyl group having 1 to 5 carbon atoms. Substituted heteroaromatic compounds. The above-mentioned heteroaromatic compound (B1) having a five-membered ring to a six-membered ring can be used in combination of two or more kinds.

上述含有羥烷基的取代基(以下也稱為含羥烷基的取代基)表示由羥烷基構成的取代基、及含有羥烷基的碳數1至10的烴衍生基中的任一個。所謂上述碳數1至10的烴 衍生基,表示烴基中一部分碳或氫可經其他原子(例如硫原子、氧原子、氟原子等)或取代基取代的基團。作為上述烴衍生基,例如可為:烷基、環烷基、烯基、環烯基、炔基、氨基、氨基烷基、乙醯基、苯基等。另外,作為上述含有羥烷基的碳數1至10的烴衍生基,例如可為下述通式(2)所表示的氨基的一個或兩個-H經羥烷基取代而成的基團,通式(2):-X-N(R1)-R2(通式(2)中,X表示碳數1至10的亞烷基,R1至R2獨立地表示氫原子或碳數1至5的羥烷基,R1至R2中至少一個為羥烷基,上述亞烷基可具有醚鍵、酯鍵、醯胺鍵、氨酯鍵等)。以下的烴衍生基及含羥烷基的取代基也相同。 The above-mentioned hydroxyalkyl group-containing substituent (hereinafter also referred to as a hydroxyalkyl group-containing substituent) represents any one of a hydroxyalkyl group-containing substituent and a hydroxyalkyl-containing hydrocarbon derivative group having 1 to 10 carbon atoms. . The above-mentioned hydrocarbon derivative group having 1 to 10 carbons means a group in which a part of carbon or hydrogen in the hydrocarbon group may be substituted with other atoms (for example, sulfur atom, oxygen atom, fluorine atom, etc.) or a substituent. Examples of the hydrocarbon-derived group include alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, amino, aminoalkyl, ethenyl, and phenyl. The hydrocarbon derivative having 1 to 10 carbon atoms containing the hydroxyalkyl group may be, for example, a group in which one or two -H of amino groups represented by the following general formula (2) are substituted with a hydroxyalkyl group. , General formula (2): -XN (R 1 ) -R 2 (In the general formula (2), X represents an alkylene group having 1 to 10 carbon atoms, and R 1 to R 2 independently represent a hydrogen atom or carbon number 1 to 5 hydroxyalkyl group, R 1 to R 2 in at least one hydroxyalkyl group, the above-described alkylene group may have an ether bond, an ester bond, acyl amine bond, a urethane bond, etc.). The same applies to the following hydrocarbon-derived groups and hydroxyalkyl-containing substituents.

另外,從結構穩定性及對酸性液的溶解性的觀點來看,上述具有五元環至六元環的雜芳香族化合物(B1)較佳為僅具有氮作為構成環的雜原子,或僅具有氮及硫作為雜原子的化合物。 In addition, from the viewpoints of structural stability and solubility in an acidic liquid, the above-mentioned heteroaromatic compound (B1) having a five-membered ring to a six-membered ring preferably has only nitrogen as a heteroatom constituting the ring, or only A compound having nitrogen and sulfur as heteroatoms.

上述具有五元環至六元環的雜芳香族化合物(B1)較佳為的是選自由以下化合物所組成的群組中的一種以上:具有含羥烷基的取代基且分子內僅含有雜芳香五元環作為雜環的化合物(b1-0)、分子內僅含有雜芳香六元環的化合物(b1-1)、分子內含有雜芳香六元環與雜五元環的稠環的化合物(b1-2)、及雜芳香六元環與雜五元環經單鍵或二價連結基連結而成的化合物(b1-3)。 The above-mentioned heteroaromatic compound (B1) having a five-membered ring to a six-membered ring is preferably one or more selected from the group consisting of a compound having a hydroxyalkyl group-containing substituent and containing only a heterocyclic molecule in the molecule. Compound (b1-0) having an aromatic five-membered ring as a heterocyclic ring, compound (b1-1) containing only a heteroaromatic six-membered ring in the molecule, and a fused ring containing a heteroaromatic six-membered ring and a hetero five-membered ring in the molecule (b1-2), and a compound (b1-3) in which a heteroaromatic six-membered ring and a hetero five-membered ring are connected through a single bond or a divalent linking group.

上述分子內含有雜芳香五元環的化合物(b1-0)只要為經具有羥烷基的取代基所取代的化合物,則並無特別限定,例如可為:具有咪唑骨架的咪唑化合物、具有吡唑骨架的吡唑化合物、具有三唑骨架的三唑化合物、具有四唑骨架的四唑化合物等唑化合物。具體可為:2-(1-羥基乙基)苯並咪唑、4-羥基甲基-5-甲基咪唑、3,5-二甲基-1-羥基甲基吡唑等。 The compound (b1-0) containing a heteroaromatic five-membered ring in the molecule is not particularly limited as long as it is a compound substituted with a substituent having a hydroxyalkyl group, and may be, for example, an imidazole compound having an imidazole skeleton and a pyridine An azole compound such as a pyrazole compound having an azole skeleton, a triazole compound having a triazole skeleton, or a tetrazole compound having a tetrazole skeleton. Specific examples include 2- (1-hydroxyethyl) benzimidazole, 4-hydroxymethyl-5-methylimidazole, 3,5-dimethyl-1-hydroxymethylpyrazole, and the like.

作為上述分子內僅含有雜芳香六元環的化合物(b1-1),例如可為:具有吡啶骨架的吡啶化合物、具有嘧啶骨架的嘧啶化合物、具有吡嗪骨架的吡嗪化合物、具有噠嗪骨架的噠嗪化合物等。 Examples of the compound (b1-1) containing a heteroaromatic six-membered ring in the molecule include, for example, a pyridine compound having a pyridine skeleton, a pyrimidine compound having a pyrimidine skeleton, a pyrazine compound having a pyrazine skeleton, and a pyridazine skeleton Pyridazine compounds and the like.

上述吡啶化合物只要為具有經含有羥烷基的取代基所取代的吡啶骨架的化合物,則並無特別限定,例如能夠例示下述通式(3)所表示的吡啶化合物。 The pyridine compound is not particularly limited as long as it is a compound having a pyridine skeleton substituted with a hydroxyalkyl group-containing substituent, and examples thereof include a pyridine compound represented by the following general formula (3).

(通式(3)中,R1至R5獨立地表示氫原子、含羥烷基的取代基、或將含羥烷基的取代基除外的碳數1至10的烴衍生基,R1至R5中至少一個表示含羥烷基的取代基) (In the general formula (3), R 1 to R 5 independently represent a hydrogen atom, a hydroxyalkyl group-containing substituent, or a hydrocarbon derivative having 1 to 10 carbon atoms excluding a hydroxyalkyl group-containing substituent, and R 1 To at least one of R 5 represents a hydroxyalkyl-containing substituent)

此外,從能夠有效地抑制側向蝕刻的觀點來看,上述將含羥烷基的取代基除外的碳數1至10的烴衍生基中的碳數1至10的烴衍生基較佳為由碳及氫構成的烴衍生基。以下的將含羥烷基的取代基除外的碳數1至10的烴衍生基也相同。 In addition, from the viewpoint of effectively suppressing the lateral etching, the hydrocarbon derivative having 1 to 10 carbons out of the hydrocarbon derivative having 1 to 10 carbons excluding the hydroxyalkyl-containing substituent is preferably derived from A hydrocarbon-derived group consisting of carbon and hydrogen. The same applies to the hydrocarbon derivative having 1 to 10 carbon atoms excluding the following hydroxyalkyl group-containing substituents.

作為上述吡啶化合物,例如可為:2-吡啶甲醇、3-吡啶甲醇、4-吡啶甲醇、2-吡啶乙醇、3-吡啶乙醇、6-甲基-2-吡啶甲醇、6-甲基-3-吡啶甲醇、2-氨基-3-吡啶甲醇、吡哆醇鹽酸鹽等。 Examples of the pyridine compound include 2-pyridinemethanol, 3-pyridinemethanol, 4-pyridinemethanol, 2-pyridineethanol, 3-pyridineethanol, 6-methyl-2-pyridinemethanol, and 6-methyl-3 -Pyridinemethanol, 2-amino-3-pyridinemethanol, pyridoxine hydrochloride and the like.

上述嘧啶化合物只要為具有經含有羥烷基的取代基所取代的嘧啶骨架的化合物,則並無特別限定,例如能夠例示下述通式(4)所表示的吡啶化合物。 The pyrimidine compound is not particularly limited as long as it is a compound having a pyrimidine skeleton substituted with a hydroxyalkyl-containing substituent, and examples thereof include a pyridine compound represented by the following general formula (4).

(通式(4)中,R6至R9獨立地表示氫原子、含羥烷基的取代基、或將含羥烷基的取代基除外的碳數1至10的烴衍生基,R6至R9中至少一個表示含羥烷基的取代基) (In the general formula (4), R 6 to R 9 independently represent a hydrogen atom, a hydroxyalkyl-containing substituent, or a hydrocarbon derivative having 1 to 10 carbon atoms excluding a hydroxyalkyl-containing substituent, and R 6 To at least one of R 9 represents a hydroxyalkyl-containing substituent)

作為上述嘧啶化合物,可為:4-氨基-2-甲基5-嘧啶甲醇、2-甲基-4-氨基嘧啶-5-甲醇、4-氨基-2-甲硫基-5-嘧啶甲醇、5-苯基嘧啶-2-乙醇、5-(4-甲氧基苯基)嘧啶-2-乙醇等。 Examples of the pyrimidine compound include 4-amino-2-methyl5-pyrimidinemethanol, 2-methyl-4-aminopyrimidine-5-methanol, 4-amino-2-methylthio-5-pyrimidinemethanol, 5-phenylpyrimidine-2-ethanol, 5- (4-methoxyphenyl) pyrimidine-2-ethanol, and the like.

上述吡嗪化合物只要為具有經含有羥烷基的取代基所取代的吡嗪骨架的化合物,則並無特別限定,例如能夠例示下述通式(5)所表示的吡嗪化合物。 The pyrazine compound is not particularly limited as long as it is a compound having a pyrazine skeleton substituted with a hydroxyalkyl group-containing substituent, and examples thereof include the pyrazine compound represented by the following general formula (5).

(通式(5)中,R10至R13獨立地表示氫原子、含羥烷基的取代基、或將含羥烷基的取代基除外的碳數1至10的烴衍生基,R10至R13中至少一個表示含羥烷基的取代基) (In the general formula (5), R 10 to R 13 independently represent a hydrogen atom, a hydroxyalkyl-containing substituent, or a hydrocarbon derivative having 1 to 10 carbon atoms excluding a hydroxyalkyl-containing substituent, and R 10 To at least one of R 13 represents a hydroxyalkyl-containing substituent)

作為上述吡嗪化合物,可為:2-吡嗪甲醇、5-甲基-2-吡嗪甲醇、1-(3-氟吡嗪-2-基)乙醇、α-苯基-2-吡嗪乙醇等。 Examples of the pyrazine compound include 2-pyrazinemethanol, 5-methyl-2-pyrazinemethanol, 1- (3-fluoropyrazin-2-yl) ethanol, and α-phenyl-2-pyrazine Ethanol and so on.

上述噠嗪化合物只要為具有經含有羥烷基的取代基所取代的噠嗪骨架的化合物,則並無特別限定,例如能夠例示下述通式(6)所表示的噠嗪化合物。 The pyridazine compound is not particularly limited as long as it is a compound having a pyridazine skeleton substituted with a hydroxyalkyl group-containing substituent. For example, a pyridazine compound represented by the following general formula (6) can be exemplified.

(通式(6)中,R14至R17獨立地表示氫原子、含羥烷基的取代基、或將含羥烷基的取代基除外的碳數1至10的烴衍生基,R14至R17中至少一個表示含羥烷基的取代基) (In the general formula (6), R 14 to R 17 independently represent a hydrogen atom, a hydroxyalkyl group-containing substituent, or a hydrocarbon derivative having 1 to 10 carbon atoms excluding a hydroxyalkyl group-containing substituent, and R 14 To at least one of R 17 represents a hydroxyalkyl-containing substituent)

作為上述噠嗪化合物,可為α-苯基噠嗪-3-甲醇、α-苯基噠嗪-4-甲醇等。 Examples of the pyridazine compound include α-phenylpyridazine-3-methanol and α-phenylpyridazine-4-methanol.

上述分子內僅含有雜芳香六元環的化合物(b1-1)中,從可獲得側向蝕刻的抑制功效高且銅配線的精細圖案形成優異的蝕刻液的觀點來看,較佳為上述吡啶化合物,更佳為2-吡啶甲醇、3-吡啶甲醇、4-吡啶甲醇、2-吡啶乙醇、3-吡啶乙醇、吡哆醇鹽酸鹽。 Among the compounds (b1-1) containing only a heteroaromatic six-membered ring in the molecule, the above pyridine is preferred from the viewpoint of obtaining an etching solution having high side etching suppression effect and excellent fine pattern formation of copper wiring. The compound is more preferably 2-pyridinemethanol, 3-pyridinemethanol, 4-pyridinemethanol, 2-pyridineethanol, 3-pyridineethanol, pyridoxine hydrochloride.

上述分子內含有雜芳香六元環與雜五元環的稠環的化合物(b1-2)只要為分子內含有如下稠環的化合物,則並無特別限定,上述稠環具有經含有羥烷基的取代基所取代的雜芳香六元環及/或經含羥烷基的取代基所取代的雜五元環,上述化合物(b1-2)例如可為:1-(羥基甲基)-1H-苯並三唑、1-(2-羥基乙基)-1H-苯並三唑、2,2'-(甲基-1H-苯並三唑 -1-基甲基亞氨基)雙乙醇、9-(2-羥基乙基)腺嘌呤等。這些化合物中,較佳為1-(羥基甲基)-1H-苯並三唑。 The compound (b1-2) containing a fused ring having a heteroaromatic six-membered ring and a hetero five-membered ring in the molecule is not particularly limited as long as it is a compound containing the following fused ring in the molecule. The fused ring has a hydroxyalkyl group The heteroaromatic six-membered ring substituted by a substituent and / or the hetero five-membered ring substituted by a hydroxyalkyl-containing substituent, the compound (b1-2) may be, for example, 1- (hydroxymethyl) -1H -Benzotriazole, 1- (2-hydroxyethyl) -1H-benzotriazole, 2,2 '-(methyl-1H-benzotriazol-1-ylmethylimino) diethanol, 9- (2-hydroxyethyl) adenine and the like. Among these compounds, 1- (hydroxymethyl) -1H-benzotriazole is preferable.

<烷醇胺(B2)>     <Alkanolamine (B2)>    

本發明的烷醇胺(B2)為具有通式(1):R1-N(R2)-R3的化合物(通式(1)中,R1及R2獨立地表示烷基或碳數1以上8以下的羥烷基,R3表示氫原子、烷基或碳數1以上8以下的羥烷基,且R1至R3中至少一個為上述羥烷基)。上述烷醇胺(B2)能夠組合使用兩種以上。 The alkanolamine (B2) of the present invention is a compound having the general formula (1): R 1 -N (R 2 ) -R 3 (in the general formula (1), R 1 and R 2 independently represent an alkyl group or a carbon A hydroxyalkyl group having a number of 1 or more and 8 or less, R 3 represents a hydrogen atom, an alkyl group, or a hydroxyalkyl group having a carbon number of 1 or more and 8 or less, and at least one of R 1 to R 3 is the above-mentioned hydroxyalkyl group). The said alkanolamine (B2) can use 2 or more types together.

作為上述烷醇胺(B2),例如可為:二甲基氨基乙醇、二乙基氨基乙醇、甲基氨基乙醇、乙基氨基乙醇、二甲基氨基丙醇、甲基氨基丙醇、二乙基氨基丙醇、丁基氨基丁醇等一元的羥基醇化合物,二乙醇胺、乙基二乙醇胺、丁基二乙醇胺等二元的羥基醇化合物,三乙醇胺等三元的羥基醇化合物等。這些化合物中,較佳為二甲基氨基乙醇、二乙基氨基乙醇。 Examples of the alkanolamine (B2) include dimethylaminoethanol, diethylaminoethanol, methylaminoethanol, ethylaminoethanol, dimethylaminopropanol, methylaminopropanol, and diethyl alcohol. Monohydric hydroxy alcohol compounds such as aminoaminopropanol and butylaminobutanol; dihydric hydroxy alcohol compounds such as diethanolamine, ethyldiethanolamine, and butyldiethanolamine; trihydric hydroxy alcohol compounds such as triethanolamine; and the like. Among these compounds, dimethylaminoethanol and diethylaminoethanol are preferred.

從能夠形成銅配線的精細圖案的觀點來看,上述選自由具有五元環至六元環的雜芳香族化合物(B1)及烷醇胺(B2)所組成的群組中的一種以上的化合物的濃度較佳為0.15g/L以上,更佳為0.2g/L以上,進而較佳為0.3g/L以上,而且較佳為30g/L以下,更佳為20g/L以下,進而較佳為10g/L以下。 From the viewpoint of forming a fine pattern of copper wiring, one or more compounds selected from the group consisting of a heteroaromatic compound (B1) and an alkanolamine (B2) having a five-membered ring to a six-membered ring. The concentration is preferably 0.15 g / L or more, more preferably 0.2 g / L or more, still more preferably 0.3 g / L or more, and further preferably 30 g / L or less, more preferably 20 g / L or less, and further preferably It is 10 g / L or less.

另外,從能夠形成銅配線的精細圖案的觀點來看,上述具有五元環的雜芳香族化合物(A)、與上述選自由具有五元環至六元環的雜芳香族化合物(B1)及烷醇胺(B2)所組成的群組中的一種以上的化合物的重量比[(A)/((B1)+(B2))]較佳為0.001以上,更佳為0.01以上,進而較佳為0.1以上,而且較佳為30以下,更佳為20以下,進而較佳為15以下。 In addition, from the viewpoint of forming a fine pattern of copper wiring, the above-mentioned heteroaromatic compound (A) having a five-membered ring and the above-mentioned heteroaromatic compound (B1) having a five- to six-membered ring and The weight ratio [(A) / ((B1) + (B2))] of one or more compounds in the group composed of alkanolamine (B2) is preferably 0.001 or more, more preferably 0.01 or more, and even more preferably It is 0.1 or more, more preferably 30 or less, more preferably 20 or less, and still more preferably 15 or less.

本發明的蝕刻液中,除了上述成分以外,也能以不妨礙本發明功效的程度添加其他成分。作為上述其他成分,例如也可添加:二亞乙基三胺、三亞乙基四胺、四亞乙基五胺、五亞乙基六胺等脂肪族非環式化合物;具有吡咯烷骨架的吡咯烷化合物、具有呱啶骨架的呱啶化合物、具有呱嗪骨架的呱嗪化合物、具有高呱嗪骨架的高呱嗪化合物、具有六氫-1,3,5-三嗪骨架的六氫-1,3,5-三嗪化合物等脂肪族雜環式化合物;二氰二胺-二亞乙基三胺縮聚物、二氰二胺-甲醛縮聚物、二氰二胺-三亞乙基四胺縮聚物等含有三級氮或四級氮的縮聚物;陽離子表面活性劑、陰離子表面活性劑、兩性表面活性劑、甘醇等成分穩定劑。此外,在添加上述其他成分的情況下,該其他成分的濃度通常為0.001g/L至5g/L左右。 To the etchant of the present invention, in addition to the above-mentioned components, other components can be added to such an extent that the effects of the present invention are not impaired. As the other components, for example, an aliphatic acyclic compound such as diethylenetriamine, triethylenetetramine, tetraethylenepentamine, and pentaethylenehexamine may be added; and pyrrole having a pyrrolidine skeleton Alkane compounds, pyridine compounds having a pyridine skeleton, pyrazine compounds having a pyrazine skeleton, homopyrazine compounds having a homopyrazine skeleton, hexahydro-1 having a hexahydro-1,3,5-triazine skeleton , 3,5-triazine compounds and other aliphatic heterocyclic compounds; dicyandiamine-diethylenetriamine polycondensate, dicyandiamine-formaldehyde polycondensate, dicyandiamine-triethylenetetramine polycondensation Materials such as polycondensates containing tertiary nitrogen or quaternary nitrogen; cationic surfactants, anionic surfactants, amphoteric surfactants, glycol stabilizers and other component stabilizers. In addition, when the other components are added, the concentration of the other components is usually about 0.001 g / L to 5 g / L.

上述蝕刻液能夠通過使上述各成分溶解在水中而容易 地製備。作為上述水,較佳為除去了離子性物質及雜質的水,例如較佳為離子交換水、純水、超純水等。 The etching solution can be easily prepared by dissolving the above components in water. The water is preferably water from which ionic substances and impurities have been removed, and for example, ion-exchanged water, pure water, ultrapure water, and the like are preferred.

上述蝕刻液可在使用時將各成分以成為預定濃度的方式調配,也可預先製備濃縮液並在即將使用之前稀釋後使用。上述蝕刻液的使用方法並無特別限定,為了有效地抑制側向蝕刻,較佳為如後述使用噴射進行蝕刻。另外,使用時的蝕刻液的溫度並無特別限制,從維持生產性高的方面來看,為了有效地抑制側向蝕刻而較佳為以20℃至55℃使用。 The above-mentioned etching solution may be prepared such that each component has a predetermined concentration during use, or a concentrated solution may be prepared in advance and used immediately after dilution. The method of using the etching solution is not particularly limited. In order to effectively suppress lateral etching, it is preferable to perform etching using spraying as described later. In addition, the temperature of the etching solution during use is not particularly limited, and it is preferably used at 20 ° C to 55 ° C in order to effectively suppress lateral etching from the viewpoint of maintaining high productivity.

本發明的補給液是在連續或反復使用本發明的蝕刻液時添加到上述蝕刻液中,且為含有上述具有五元環的雜芳香族化合物(A)、以及上述選自由具有五元環至六元環的雜芳香族化合物(B1)及上述烷醇胺(B2)所組成的群組中的一種以上的化合物的水溶液。上述補給液中的各成分與能夠調配到上述本發明的蝕刻液中的成分相同。通過添加上述補給液而確保上述蝕刻液的各成分比適當,因此能夠穩定地維持上述本發明的蝕刻液的功效。 The replenishing solution of the present invention is added to the etching solution when the etching solution of the present invention is used continuously or repeatedly, and contains the above-mentioned heteroaromatic compound (A) having a five-membered ring, and the above is selected from the group having a five-membered ring to An aqueous solution of one or more compounds from the group consisting of a six-membered heteroaromatic compound (B1) and the alkanolamine (B2). Each component in the replenishment liquid is the same as a component that can be blended into the etching solution of the present invention. By adding the replenishing liquid to ensure that the respective component ratios of the etchant are appropriate, the efficacy of the etchant of the present invention can be stably maintained.

另外,本發明的補給液中,也能以濃度不超過360g/L的範圍含有鹽酸等酸。另外,上述補給液中,也能以按銅離子濃度計而濃度不超過14g/L的範圍含有氯化銅等氧化性金屬離子。另外,上述補給液中,除了上述成分以外也 可調配添加到蝕刻液中的其他成分。另外,這些可含有在上述補給液中的成分也能不含有在上述補給液中,而在連續或反復使用本發明的蝕刻液時直接添加到本發明的蝕刻液中。 In addition, the replenishment solution of the present invention may contain an acid such as hydrochloric acid in a range of a concentration not exceeding 360 g / L. In addition, the replenishment liquid may contain an oxidizing metal ion such as copper chloride in a range of not more than 14 g / L in terms of copper ion concentration. In addition, in the replenishing liquid, other components may be added to the etching liquid in addition to the above-mentioned components. Moreover, these components which may be contained in the said replenishment liquid may not be contained in the said replenishment liquid, and may be directly added to the etchant of this invention when using the etchant of this invention continuously or repeatedly.

上述補給液中的各成分的濃度是根據蝕刻液中的各成分的濃度而適宜設定,從穩定地維持上述本發明的蝕刻液的功效的觀點來看,較佳為上述具有五元環的雜芳香族化合物(A)、與上述選自由具有五元環至六元環的雜芳香族化合物(B1)及上述烷醇胺(B2)所組成的群組中的一種以上的化合物的合計濃度為0.01g/L至30g/L。 The concentration of each component in the replenishment solution is appropriately set according to the concentration of each component in the etching solution. From the viewpoint of stably maintaining the efficacy of the above-mentioned etching solution of the present invention, it is preferable that the above-mentioned The total concentration of the aromatic compound (A) and one or more compounds selected from the group consisting of the heteroaromatic compound (B1) having a 5- to 6-membered ring and the alkanolamine (B2) is 0.01g / L to 30g / L.

本發明的銅配線的形成方法對銅層中的未被抗蝕劑覆蓋的部分進行蝕刻,且上述銅配線的形成方法的特徵在於,使用上述本發明的蝕刻液進行蝕刻。由此,如上述,側向蝕刻的抑制功效高,能夠形成優異的銅配線的精細圖案。另外,在採用本發明的銅配線的形成方法的銅配線形成步驟中,連續或反復使用本發明的蝕刻液的情況下,較佳為一邊添加上述本發明的補給液一邊進行蝕刻。此操作的原因在於:確保上述蝕刻液的各成分比適當,因此能夠穩定地維持上述本發明的蝕刻液的功效。 The method of forming a copper wiring of the present invention etches a portion of a copper layer that is not covered by a resist, and the method of forming the copper wiring is characterized in that the etching solution of the present invention is used for etching. Therefore, as described above, the side etching has a high suppression effect and can form an excellent fine pattern of copper wiring. In the copper wiring forming step using the copper wiring forming method of the present invention, when the etching solution of the present invention is used continuously or repeatedly, it is preferable to perform the etching while adding the replenishing solution of the present invention. The reason for this operation is to ensure that the respective component ratios of the etching solution are appropriate, so that the efficacy of the etching solution of the present invention can be stably maintained.

本發明的銅配線的形成方法中,較佳為通過噴射對上述銅層中的未被抗蝕劑覆蓋的部分噴霧上述蝕刻液。此操 作的原因在於能夠有效地抑制側向蝕刻。噴射時,噴嘴並無特別限定,能夠使用扇形噴嘴、密實錐形噴嘴、二流體噴嘴等。 In the method for forming a copper wiring of the present invention, it is preferable to spray the etching solution on a portion of the copper layer that is not covered by the resist by spraying. The reason for this operation is that the side etching can be effectively suppressed. In spraying, the nozzle is not particularly limited, and a fan nozzle, a dense conical nozzle, a two-fluid nozzle, or the like can be used.

在通過噴射進行蝕刻的情況下,噴射壓力較佳為0.04MPa以上,更佳為0.08MPa以上。若噴射壓力為0.04MPa以上,則能夠在銅配線的側面以適當的厚度形成保護皮膜。由此,能夠有效地防止側向蝕刻。此外,從防止抗蝕劑的破損的觀點來看,上述噴射壓力較佳為0.30MPa以下。 When etching is performed by spraying, the spraying pressure is preferably 0.04 MPa or more, and more preferably 0.08 MPa or more. When the injection pressure is 0.04 MPa or more, a protective film can be formed on the side surface of the copper wiring with an appropriate thickness. Thereby, the side etching can be effectively prevented. In addition, from the viewpoint of preventing damage to the resist, the above-mentioned ejection pressure is preferably 0.30 MPa or less.

[實施例]     [Example]    

接下來,對本發明的實施例與比較例一起進行說明。此外,本發明並非限定於下述實施例而解釋。 Next, examples of the present invention and comparative examples will be described. The present invention is not limited to the examples described below.

製備表1至表2所示的組成的各蝕刻液,以後述條件進行蝕刻,通過後述評價方法對各項目進行評價。此外,表1至表2所示的組成的各蝕刻液中,剩餘部分為離子交換水。另外,表1至表2所示的鹽酸的濃度為按氯化氫計的濃度。 Each etching solution having the composition shown in Tables 1 to 2 was prepared, and etching was performed under conditions described later, and each item was evaluated by an evaluation method described later. In each of the etching solutions having the compositions shown in Tables 1 to 2, the remainder was ion-exchanged water. The concentrations of hydrochloric acid shown in Tables 1 to 2 are concentrations in terms of hydrogen chloride.

(所使用的試驗基板) (Test substrate used)

準備銅層的厚度為8μm的銅/聚醯亞胺疊層板(東麗膜加工(Toray Advanced Film)生產,商品名 「PI-38N-CCS-08EO」),通過微影法(光阻劑(東京應化生產的「PMER-P-RZ30」))在該銅層上形成抗蝕劑圖案。關於抗蝕劑圖案,製作厚度約4μm、線/間隙=13μm/7μm的20μm間距圖案區域與線/間隙=22μm/18μm的40μm間距圖案區域混合存在的光阻圖案。 A copper / polyimide laminate having a copper layer thickness of 8 μm (produced by Toray Advanced Film, trade name “PI-38N-CCS-08EO”) was prepared, and a photolithography method (photoresist ("PMER-P-RZ30" manufactured by Tokyo Induction)) A resist pattern is formed on the copper layer. Regarding the resist pattern, a photoresist pattern in which a 20 μm pitch pattern region with a thickness of about 4 μm and a line / gap = 13 μm / 7 μm and a 40 μm pitch pattern region with a line / gap = 22 μm / 18 μm was prepared.

(蝕刻條件) (Etching conditions)

蝕刻是使用扇形噴嘴(池內(IKEUCIH)公司生產,商品名「ISVV9020」)以噴射壓力0.18MPa、處理溫度35℃的條件進行。關於處理時間,20μm間距的情況下設定為銅配線的底部寬度成為8μm至15μm的時間。此時的處理時間如表1至表2所示。其中,僅比較例8以噴射壓力0.12MPa進行處理。蝕刻後,進行水洗、乾燥,並進行以下所示的評價。 Etching was performed using a fan nozzle (produced by Ikeuchi (IKEUCIH), trade name "ISVV9020") at a spray pressure of 0.18 MPa and a processing temperature of 35 ° C. Regarding the processing time, in the case of a pitch of 20 μm, it is set such that the bottom width of the copper wiring becomes 8 μm to 15 μm. The processing time at this time is shown in Tables 1 to 2. Among them, only Comparative Example 8 was treated with an injection pressure of 0.12 MPa. After the etching, the substrate was washed with water, dried, and evaluated as shown below.

(精細圖案的評價) (Evaluation of fine patterns)

對經蝕刻處理的各試驗基板使用鹽酸(氯化氫濃度:7重量%),利用扇形噴嘴(池內(IKEUCIH)公司生產,商品名:ISVV9020)以噴射壓力0.15MPa、處理時間40秒除去保護皮膜,在丙酮中浸漬20秒鐘(或在3重量%氫氧化鈉水溶液中浸漬60秒鐘),除去抗蝕劑。然後,將各試驗基板的一部分切斷,將該部分嵌埋到冷嵌埋樹脂中,以能夠觀察配線的剖面的方式進行研磨加工,製作剖面觀察用的樣本。關於配線的剖面觀察,使用光學顯微鏡拍攝圖像, 測量配線的頂部寬度及底部寬度。此時,進行n=2以上的測量,將頂部寬度及底部寬度設為平均值。另外,表中的B-T為銅配線的底部寬度-頂部寬度的值。另外,比較例中,在無法蝕刻到底部而無法測量底部寬度的情況下示作「-」。表中的精細圖案(精細Pt)的欄中,將線/間隙=13μm/7μm的20μm間距圖案區域的B-T的值小於2μm的情況評價為○,將該B-T的值為2μm以上的情況、或無法測定底部寬度的情況評價為×。 For each test substrate subjected to the etching treatment, hydrochloric acid (hydrogen chloride concentration: 7% by weight) was used, and the protective film was removed by using a fan nozzle (produced by Ikeuchi (IKEUCIH) Co., Ltd .: ISVV9020) at a spray pressure of 0.15 MPa and a processing time of 40 seconds. The resist was immersed in acetone for 20 seconds (or 60 seconds in a 3% by weight aqueous sodium hydroxide solution). Then, a part of each test substrate was cut, and this part was embedded in a cold-embedded resin, and the grinding process was performed so that the cross section of a wiring could be observed, and the sample for cross-section observation was produced. For the cross-sectional observation of the wiring, an image was taken using an optical microscope, and the top width and the bottom width of the wiring were measured. At this time, a measurement of n = 2 or more is performed, and the top width and the bottom width are set as an average value. In addition, B-T in the table is a value of the bottom width-top width of the copper wiring. In addition, in the comparative example, "-" is shown when the bottom width cannot be measured and the bottom width cannot be measured. In the column of the fine pattern (fine Pt) in the table, a case where the BT value of the 20 μm pitch pattern region with a line / gap of 13 μm / 7 μm is less than 2 μm is evaluated as ○, and a case where the BT value is 2 μm or more, or The case where the bottom width cannot be measured is evaluated as ×.

表1及表2中,二氰二胺-甲醛縮聚物為Senka公司生產的商品名「Unisense KHF10P」的產品。 In Tables 1 and 2, the dicyandiamine-formaldehyde polycondensate is a product of "Unisense KHF10P" manufactured by Senka Corporation.

如表1所示,根據本發明的實施例,上述B-T的值小於2μm,可知能夠形成優異的精細圖案。另一方面,如表2所示,比較例獲得了比實施例差的結果。由該結果可知,根據本發明,能夠獲得側向蝕刻的抑制功效較高且銅配線的精細圖案形成優異的蝕刻液。 As shown in Table 1, according to the embodiment of the present invention, the value of the B-T is less than 2 μm, and it is understood that an excellent fine pattern can be formed. On the other hand, as shown in Table 2, the comparative example obtained a worse result than the example. From this result, it is understood that according to the present invention, it is possible to obtain an etching solution with high suppression effect of lateral etching and excellent pattern formation of copper wiring.

Claims (10)

一種蝕刻液,為銅的蝕刻液;前述蝕刻液為含有酸、氧化性金屬離子、具有五元環的雜芳香族化合物(A)、以及選自由具有五元環至六元環的雜芳香族化合物(B1)及烷醇胺(B2)所組成的群組中的一種以上的化合物的水溶液;前述具有五元環的雜芳香族化合物(A)為不具有羥烷基,且具有一個以上的氮原子作為構成環的雜原子的雜芳香族化合物;前述具有五元環至六元環的雜芳香族化合物(B1)為具有一個以上的氮原子作為構成環的雜原子,且經含有碳數1以上5以下的羥烷基的取代基所取代的雜芳香族化合物;前述烷醇胺(B2)為具有通式R 1-N(R 2)-R 3的化合物,並且通式中,R 1及R 2獨立地表示烷基或碳數1以上8以下的羥烷基,R 3表示氫原子、烷基或碳數1以上8以下的羥烷基,且R 1至R 3中至少一個為前述羥烷基。 An etching solution is a copper etching solution; the aforementioned etching solution contains an acid, an oxidizing metal ion, a heteroaromatic compound (A) having a five-membered ring, and a heteroaromatic compound selected from the group consisting of a five-membered ring to a six-membered ring An aqueous solution of one or more compounds in the group consisting of a compound (B1) and an alkanolamine (B2); the aforementioned heteroaromatic compound (A) having a five-membered ring has no hydroxyalkyl group and has one or more A heteroaromatic compound having a nitrogen atom as a heteroatom constituting a ring; the aforementioned heteroaromatic compound (B1) having a five-membered ring to a six-membered ring is a heteroatom having one or more nitrogen atoms and has a carbon number Heteroaromatic compounds substituted with 1 to 5 hydroxyalkyl substituents; the aforementioned alkanolamine (B2) is a compound having the general formula R 1 -N (R 2 ) -R 3 , and in the general formula, R 1 and R 2 independently represent an alkyl group or a hydroxyalkyl group having 1 to 8 carbon atoms, R 3 represents a hydrogen atom, an alkyl group or a hydroxyalkyl group having 1 to 8 carbon atoms, and at least one of R 1 to R 3 Is the aforementioned hydroxyalkyl group. 如請求項1所記載之蝕刻液,其中前述酸為鹽酸。     The etching solution according to claim 1, wherein the acid is hydrochloric acid.     如請求項1或2所記載之蝕刻液,其中前述氧化性金屬離子為銅離子。     The etching solution according to claim 1 or 2, wherein the oxidizing metal ion is a copper ion.     如請求項1或2所記載之蝕刻液,其中前述具有五元環的雜芳香族化合物(A)為選自由咪唑化合物、吡唑化合物、三唑化合物及四唑化合物所組成的群組中的一種以上的化合物。     The etching solution according to claim 1 or 2, wherein the heteroaromatic compound (A) having a five-membered ring is selected from the group consisting of an imidazole compound, a pyrazole compound, a triazole compound, and a tetrazole compound. More than one compound.     如請求項1或2所記載之蝕刻液,其中前述具有五元環至六元環的雜芳香族化合物(B1)僅具有一個以上的氮作為構成環的雜原子。     The etching solution according to claim 1 or 2, wherein the heteroaromatic compound (B1) having a five-membered ring to a six-membered ring has only one or more nitrogen atoms as a heteroatom constituting the ring.     如請求項1或2所記載之蝕刻液,其中前述具有五元環至六元環的雜芳香族化合物(B1)為選自由以下化合物所組成的群組中的一種以上:分子內僅含有雜芳香五元環作為雜環的化合物(b1-0)、分子內僅含有雜芳香六元環的化合物(b1-1)、分子內含有雜芳香六元環與雜五元環的稠環的化合物(b1-2)、及雜芳香六元環與雜五元環經單鍵或二價連結基連結而成的化合物(b1-3)。     The etching solution according to claim 1 or 2, wherein the aforementioned heteroaromatic compound (B1) having a five-membered ring to a six-membered ring is one or more members selected from the group consisting of: Compound (b1-0) having an aromatic five-membered ring as a heterocyclic ring, compound (b1-1) containing only a heteroaromatic six-membered ring in the molecule, and a fused ring containing a heteroaromatic six-membered ring and a hetero five-membered ring in the molecule (b1-2), and a compound (b1-3) in which a heteroaromatic six-membered ring and a hetero five-membered ring are connected through a single bond or a divalent linking group.     如請求項1或2所記載之蝕刻液,其中前述選自由具有五元環至六元環的雜芳香族化合物(B1)及烷醇胺(B2)所組成的群組中的一種以上的化合物的濃度為0.15g/L以上30g/L以下。     The etching solution according to claim 1 or 2, wherein the compound is one or more compounds selected from the group consisting of a heteroaromatic compound (B1) having a five-membered ring to a six-membered ring and an alkanolamine (B2). The concentration is 0.15 g / L or more and 30 g / L or less.     如請求項1或2所記載之蝕刻液,其中前述具有五元環的雜芳香族化合物(A)、與前述選自由具有五元環至六元環的雜芳香族化合物(B1)及烷醇胺(B2)所組成的群組中的一種以上的化合物的重量比[(A)/((B1)+(B2))]為0.001以上30以下。     The etching solution according to claim 1 or 2, wherein the heteroaromatic compound (A) having a five-membered ring and the heteroaromatic compound (B1) having a five-membered ring to a six-membered ring are selected from the alkanol The weight ratio [(A) / ((B1) + (B2))] of one or more compounds in the group composed of the amine (B2) is 0.001 or more and 30 or less.     一種補給液,在連續或反復使用如請求項1至8中任一項所記載之蝕刻液時添加到前述蝕刻液中;前述補給液為含有前述具有五元環的雜芳香族化合物(A)、以及前述選自由具有五元環至六元環的雜芳 香族化合物(B1)及前述烷醇胺(B2)所組成的群組中的一種以上的化合物的水溶液。     A replenisher added to the etchant when the etchant according to any one of claims 1 to 8 is used continuously or repeatedly; the replenisher is a heteroaromatic compound (A) containing the five-membered ring And an aqueous solution of one or more compounds selected from the group consisting of a heteroaromatic compound (B1) having a five-membered ring to a six-membered ring and the alkanolamine (B2).     一種銅配線的形成方法,對銅層中的未被抗蝕劑覆蓋的部分進行蝕刻;並且前述銅配線的形成方法,係使用如請求項1至8中任一項所記載之蝕刻液進行蝕刻。     A method for forming a copper wiring, etching a portion of a copper layer that is not covered by a resist; and the method for forming the copper wiring, using an etching solution according to any one of claims 1 to 8 for etching .    
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