TWI672398B - Amphiphobic structure and method for manufacturing the same - Google Patents

Amphiphobic structure and method for manufacturing the same Download PDF

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TWI672398B
TWI672398B TW106141851A TW106141851A TWI672398B TW I672398 B TWI672398 B TW I672398B TW 106141851 A TW106141851 A TW 106141851A TW 106141851 A TW106141851 A TW 106141851A TW I672398 B TWI672398 B TW I672398B
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oil
water double
micro
anodization
etching
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TW201925543A (en
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郭峻男
李承軒
顏紹儀
賴宇倫
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財團法人工業技術研究院
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Abstract

本揭露提供之油水雙疏結構的形成方法,包括:(i)在鹵素鹽類的溶液中對基材進行第一陽極氧化蝕刻,以形成微米凹凸結構;以及(ii)在醋酸、草酸、檸檬酸、或上述之組合的溶液中對微米凹凸結構進行第二陽極氧化蝕刻,以形成多個奈米孔洞於微米凹凸結構的表面,其中微米凹凸結構的平均粗糙度(Ra)介於500nm至1500nm之間。 The method for forming an oil-water double-drain structure provided by the present disclosure comprises: (i) performing a first anodization etching on a substrate in a solution of a halogen salt to form a micro-concave structure; and (ii) in acetic acid, oxalic acid, lemon a second anodization etching of the micro-concave structure in an acid or a combination of the above to form a plurality of nanopores on the surface of the micro-concave structure, wherein the micro-concave structure has an average roughness (Ra) of 500 nm to 1500 nm between.

Description

油水雙疏結構與其形成方法 Oil-water double-sparse structure and its forming method

本揭露關於油水雙疏結構。 The disclosure relates to oil-water double-sparing structure.

油水雙疏結構(對水與油的接觸角均大於90°)在工業與民生的應用相當廣泛。依照Young's Equation,液滴在固體的表面上會形成接觸角。當接觸角>90°時,則液體不易附著在固體表面而易於分開。當液體表面能愈小,則固體的表面能亦需愈小才能達到大接觸角。水的表面能為72.3mN/m。油相中以十六烷為代表,其表面能為27.5mN/m。一般食用油的表面能介於25~35mN/m之間。因此,在油水雙疏結構中,疏油表面的技術門檻比疏水表面的技術門檻高。 The oil-water double-sparing structure (the contact angle between water and oil is greater than 90°) is widely used in industry and people's livelihood. According to Young's Equation, the droplets form a contact angle on the surface of the solid. When the contact angle is >90°, the liquid is less likely to adhere to the solid surface and is easily separated. When the surface energy of the liquid is smaller, the surface energy of the solid needs to be smaller to reach a large contact angle. The surface energy of water is 72.3 mN/m. The oil phase is represented by hexadecane and its surface energy is 27.5 mN/m. The surface energy of common edible oils is between 25 and 35 mN/m. Therefore, in the oil-water double-drain structure, the technical threshold of the oleophobic surface is higher than the technical threshold of the hydrophobic surface.

此外,油水雙疏結構亦需考慮油滴在結構表面的滑動角,否則油滴將凝結於結構表面上而難以清除。目前大部份的油水雙疏結構,其油滴的滑動角都大於5度,甚至大於10度。綜上所述,目前亟需新的油水雙疏結構,以同時兼顧與水之間的大接觸角、與油之間的大接觸角、以及油滴在結構表面的小滑動角。 In addition, the oil-water double-drain structure also needs to consider the sliding angle of the oil droplets on the surface of the structure, otherwise the oil droplets will condense on the surface of the structure and it is difficult to remove. At present, most of the oil-water double-drain structure has a sliding angle of more than 5 degrees, or even more than 10 degrees. In summary, there is a need for a new oil-water double-drain structure to simultaneously take into account the large contact angle with water, the large contact angle with oil, and the small sliding angle of oil droplets on the surface of the structure.

本揭露一實施例提供之油水雙疏結構,包括:微 米凹凸結構;以及多個奈米孔洞,位於微米凹凸結構的表面,其中微米凹凸結構的平均粗糙度(Ra)介於500nm至1500nm之間。 The oil-water double-sparing structure provided by an embodiment includes: micro a moire structure; and a plurality of nanopores located on the surface of the micro-concave structure, wherein the micro-concave structure has an average roughness (Ra) of between 500 nm and 1500 nm.

本揭露一實施例提供之油水雙疏結構的形成方法,包括:(i)在鹵素鹽類的溶液中對基材進行第一陽極氧化蝕刻,以形成微米凹凸結構;以及(ii)在醋酸、草酸、檸檬酸、或上述之組合的溶液中對微米凹凸結構進行第二陽極氧化蝕刻,以形成多個奈米孔洞於微米凹凸結構的表面,其中微米凹凸結構的平均粗糙度(Ra)介於500nm至1500nm之間。 The method for forming an oil-water double-drain structure provided by an embodiment includes: (i) performing a first anodization etching on a substrate in a solution of a halogen salt to form a micro-concave structure; and (ii) in acetic acid, A second anodization etching of the micro-concave structure is performed in a solution of oxalic acid, citric acid, or a combination thereof to form a plurality of nanopores on the surface of the micro-concave structure, wherein the average roughness (Ra) of the micro-concave structure is between Between 500 nm and 1500 nm.

第1圖係一實施例中,微米凹凸結構的SEM照片。 Fig. 1 is a SEM photograph of a micron uneven structure in an embodiment.

第2圖係一實施例中,位於微米凹凸結構之側壁表面的奈米孔洞其SEM照片。 Fig. 2 is a SEM photograph of a nanopore on the side wall surface of the micro-concave structure in an embodiment.

本揭露一實施例提供油水雙疏結構的形成方法,包括:(i)在鹵素鹽類的溶液中對基材進行第一陽極氧化蝕刻,以形成微米凹凸結構。在一實施例中,基材為鋁片。在一實施例中,鹵素鹽類包括NaCl、NaF、NaBr、KCl、KBr、或上述之組合,且鹵素鹽類的濃度介於0.04M至0.08M。若鹵素鹽類的濃度過高,則無法調大電壓至蝕刻所需的電壓值。若鹵素鹽類的濃度過低,則無法提供足夠的導電度而使得電流密度過小致無法達到粗糙度的要求。在一實施例中,第一陽極氧化蝕刻的電壓介於4V至8V之間。若第一陽極氧化蝕刻的電壓過高,則會 蝕刻太多底材至電解液中致使底材變得過薄而影響到結構強度。若第一陽極氧化蝕刻的電壓過低,則無法驅動蝕刻反應的產生或反應會過慢致使製程過於冗長。在一實施例中,第一陽極氧化蝕刻的電流密度介於0.02A/cm2至0.03A/cm2之間。若第一陽極氧化蝕刻的電流密度過高,則表示電壓過高會蝕刻太多底材至電解液中致使底材變得過薄。若第一陽極氧化蝕刻的電流密度過低,則表示電壓過低,則無法驅動蝕刻反應的產生或反應會過慢致使製程過於冗長。因為同一個氧化蝕刻的系統中,在電解質濃度與溫度不變情況下,電壓與電流密度成正相關。在一實施例中,第一陽極氧化蝕刻的溫度介於10℃至30℃之間。若第一陽極氧化蝕刻的溫度過高,則會導致危險。若第一陽極氧化蝕刻的溫度過低,則反應會過慢致使製程過於冗長。在一實施例中,第一陽極氧化蝕刻歷時1小時至3小時之間。若第一陽極氧化蝕刻的時間過長,則蝕刻太多底材至電解液中致使底材變得過薄。若第一陽極氧化蝕刻的時間過短,則蝕刻不足無法形成粗糙度足夠的表面微米凹凸結構。 An embodiment of the present invention provides a method for forming an oil-water double-drain structure, comprising: (i) performing a first anodization etching on a substrate in a solution of a halogen salt to form a micro-concave structure. In one embodiment, the substrate is an aluminum sheet. In one embodiment, the halogen salt comprises NaCl, NaF, NaBr, KCl, KBr, or a combination thereof, and the concentration of the halogen salt is between 0.04 M and 0.08 M. If the concentration of the halogen salt is too high, the voltage cannot be increased to the voltage required for etching. If the concentration of the halogen salt is too low, sufficient conductivity cannot be provided and the current density is too small to meet the roughness requirement. In an embodiment, the voltage of the first anodization etch is between 4V and 8V. If the voltage of the first anodization etch is too high, too much substrate is etched into the electrolyte causing the substrate to become too thin to affect the structural strength. If the voltage of the first anodization etch is too low, the generation of the etching reaction or the reaction may be too slow to cause the process to be too long. In one embodiment, the first anodization etch has a current density between 0.02 A/cm 2 and 0.03 A/cm 2 . If the current density of the first anodization etch is too high, it means that too high a voltage will etch too much substrate into the electrolyte causing the substrate to become too thin. If the current density of the first anodization etching is too low, it means that the voltage is too low, and the generation of the etching reaction or the reaction may be too slow to make the process too long. Because in the same oxidized etching system, the voltage is positively correlated with the current density at the same electrolyte concentration and temperature. In an embodiment, the temperature of the first anodization etch is between 10 ° C and 30 ° C. If the temperature of the first anodization etch is too high, it is dangerous. If the temperature of the first anodization etch is too low, the reaction will be too slow and the process will be too long. In one embodiment, the first anodization etch is between 1 hour and 3 hours. If the first anodization etch is too long, etching too much of the substrate into the electrolyte causes the substrate to become too thin. If the time of the first anodization etching is too short, insufficient etching may not form a surface micro-concave structure having a sufficient roughness.

接著(ii)在醋酸、草酸、檸檬酸、或上述之組合的溶液中該微米凹凸結構進行第二陽極氧化蝕刻,以形成多個奈米孔洞於微米凹凸結構的表面。第二陽極氧化蝕刻會進一步增加微米凹凸結構的粗糙度。舉例來說,微米凹凸結構的中心線平均粗糙度(Ra)介於500nm至1500nm之間。若微米凹凸結構的中心線平均粗糙度過小,則油滴不易在表面滑動致呈現的滑動角較大,甚或會發生油滴黏滯在表面的情形。若微米凹凸結構的中心線平均粗糙度過大,則表示在蝕刻的時間過長致使底材 變薄而影響到結構的穩固性。在步驟(ii)中,醋酸、草酸、檸檬酸、或上述之組合的濃度介於0.1M至0.5M之間。若醋酸、草酸、檸檬酸、或上述之組合的濃度過低,則導電性不足而無法將電流密度調整至所需的範圍。若醋酸、草酸、檸檬酸、或上述之組合的濃度過高,則形成飽合溶液,在蝕刻時會析出溶質而影響製程。值得注意的是,若步驟(ii)採用較強的酸如磷酸,則會會形成柱狀的奈米柱而無法形成奈米孔洞。在一實施例中,第二陽極氧化蝕刻的電壓介於30V至80V之間。若第二陽極氧化蝕刻的電壓過高,則會導致奈米孔洞的孔洞壁瓦解而形成柱狀結構,且製程危險性增加而不適合用於此系統。若第二陽極氧化蝕刻的電壓過低,則奈米孔洞形成的密度將會過低而影響奈米孔洞的總體積。在一實施例中,第二陽極氧化蝕刻的電流密度介於0.005A/cm2至0.015A/cm2之間。若第二陽極氧化蝕刻的電流密度過高,則會導致奈米孔洞的孔洞壁瓦解而形成柱狀結構。若第二陽極氧化蝕刻的電流密度過低,則奈米孔洞形成的密度將會過低而影響奈米孔洞的總體積。在一實施例中,第二陽極氧化蝕刻的溫度介於10℃至30℃之間。若第二陽極氧化蝕刻的溫度過高,則導致電流密度過大而破壞第一陽極氧化蝕刻的微米結構。若第二陽極氧化蝕刻的溫度過低,則奈米孔洞形成的密度將會過低而影響奈米孔洞的總體積。在一實施例中,第二陽極氧化蝕刻歷時1小時至3小時之間。若第二陽極氧化蝕刻的時間過長,則會導致奈米孔洞的孔洞壁瓦解而形成柱狀結構。若第二陽極氧化蝕刻的時間過短,則奈米孔洞形成的密度將會過低而影響奈米孔洞的總體積。 Next, (ii) the micro-concave structure is subjected to a second anodization etching in a solution of acetic acid, oxalic acid, citric acid, or a combination thereof to form a plurality of nanopores on the surface of the micro-concave structure. The second anodization etch further increases the roughness of the micro-concave structure. For example, the center line average roughness (Ra) of the micro-concave structure is between 500 nm and 1500 nm. If the average roughness of the center line of the micro-concave structure is too small, the sliding angle of the oil droplets which are not easily slid on the surface is large, and even the oil droplets may stick to the surface. If the center line average roughness of the micro-concave structure is too large, it means that the etching time is too long to cause the substrate to become thin and affect the structural stability. In step (ii), the concentration of acetic acid, oxalic acid, citric acid, or a combination thereof is between 0.1 M and 0.5 M. If the concentration of acetic acid, oxalic acid, citric acid, or a combination thereof is too low, the conductivity is insufficient and the current density cannot be adjusted to a desired range. If the concentration of acetic acid, oxalic acid, citric acid, or a combination thereof is too high, a saturated solution is formed, and a solute is precipitated during etching to affect the process. It is worth noting that if a strong acid such as phosphoric acid is used in step (ii), a columnar nano column will be formed and a nanopore cannot be formed. In an embodiment, the voltage of the second anodization etch is between 30V and 80V. If the voltage of the second anodization etching is too high, the pore walls of the nanopore will collapse and form a columnar structure, and the process risk is increased, which is not suitable for the system. If the voltage of the second anodization etch is too low, the density of the nanopore formation will be too low to affect the total volume of the nanopore. In one embodiment, the second anodization etch has a current density between 0.005 A/cm 2 and 0.015 A/cm 2 . If the current density of the second anodization etching is too high, the pore walls of the nanopore will collapse and form a columnar structure. If the current density of the second anodization etch is too low, the density of the nanopore formation will be too low to affect the total volume of the nanopore. In an embodiment, the temperature of the second anodization etch is between 10 ° C and 30 ° C. If the temperature of the second anodization etch is too high, the current density is too large to destroy the micro-structure of the first anodization etch. If the temperature of the second anodization etch is too low, the density of the nanopore formation will be too low to affect the total volume of the nanopore. In one embodiment, the second anodization etch is between 1 hour and 3 hours. If the second anodization etching time is too long, the pore walls of the nanopore will collapse and form a columnar structure. If the second anodization etching time is too short, the density of the nanopore formation will be too low to affect the total volume of the nanopore.

步驟(ii)的第二陽極氧化蝕刻可形成奈米孔洞於微米凹凸結構的表面。在一實施例中,奈米孔洞之直徑介於10nm至60nm之間。若奈米孔洞之直徑過小,則下方無法蓄積足夠的空氣氣泡而致使油滴與表面接觸面積較大而影響油滴滑動。若奈米孔洞之直徑過大,則會導致奈米孔洞的孔洞壁瓦解而形成柱狀結構。在一實施例中,奈米孔洞之深度介於2nm至35nm之間若奈米孔洞之深度過小,則奈米孔洞不足無法蓄積足夠的空氣氣泡。若奈米孔洞之深度過大,則表示電流太大致連帶的在形成孔洞時,其直徑也會過大而導致奈米孔洞的孔洞壁瓦解而形成柱狀結構。 The second anodization etching of step (ii) forms a nanopore on the surface of the micro-concave structure. In one embodiment, the nanopore has a diameter between 10 nm and 60 nm. If the diameter of the hole is too small, sufficient air bubbles cannot accumulate underneath, resulting in a large contact area between the oil droplet and the surface, which affects the sliding of the oil droplet. If the diameter of the nanopore is too large, the pore walls of the nanopore will collapse and form a columnar structure. In one embodiment, if the depth of the nanopore is between 2 nm and 35 nm and the depth of the nanopore is too small, the nanopore is insufficient to accumulate sufficient air bubbles. If the depth of the hole is too large, it means that the current is too much associated with the hole, and the diameter of the hole is too large, causing the hole wall of the nano hole to collapse and form a columnar structure.

在一實施例中,上述方法更包括(iii)以氟化矽烷改質奈米孔洞與微米凹凸結構的表面。上述氟化矽烷的碳數為n,氟原子的數目為2n-3至2n+1之間,且n介於8~12之間。若氟化矽烷的碳數過少,因其無足夠的位置可以銜接F原子,無法提供低表面能的官能基致使滑動角表現不佳,造成滑動角變大造成油滴不易滑落。若氟化矽烷的碳數過多,則不易水解形成OH官能基,造成與金屬表面無法形成強力的共價鍵。若氟化矽烷的F原子過少,則無法提供低表面能的官能基。若氟化矽烷的F原子過多,則表示碳數必需增加而具有不易水解的問題。在一實施例中,氟化矽烷可為1H,1H,2H,2H-過氟化十烷基-三氯化矽烷(1H,1H,2H,2H-perfluorodecyltrichlorosilane,FDTS)或1H,1H,2H,2H-過氟化十烷基-三乙氧基矽烷(1H,1H,2H,2H-Perfluorodecyltriethoxysilane,FAS)。 In one embodiment, the above method further comprises (iii) modifying the surface of the nanopore and the micro-convex structure with fluorinated decane. The above fluorinated decane has a carbon number of n, a number of fluorine atoms of between 2n-3 and 2n+1, and n of between 8 and 12. If the carbon number of the fluorinated decane is too small, since there is not enough position to engage the F atom, the functional group having a low surface energy cannot provide a poor sliding angle, and the sliding angle becomes large, so that the oil droplet is not easily slipped. If the carbon number of the fluorinated decane is too large, it is difficult to hydrolyze to form an OH functional group, and a strong covalent bond with the metal surface cannot be formed. If the F atom of fluorinated decane is too small, a functional group having a low surface energy cannot be provided. If the F atom of the fluorinated decane is too large, it means that the carbon number must be increased and there is a problem that hydrolysis is difficult. In one embodiment, the fluorinated decane may be 1H, 1H, 2H, 2H-perfluorodecyltrichlorosilane (FDS) or 1H, 1H, 2H, 1H, 2H, 2H, 2H, 2H-Tetrafluoro-triethoxydecane (1H, 1H, 2H, 2H-Perfluorodecyltriethoxysilane, FAS).

經上述方法形成之油水雙疏結構,其奈米孔洞體 積/油水雙疏結構的面積介於800nm3/(300nm×300nm)至250000nm3/(300nm×300nm)之間。上述孔洞體積為單位面積中,奈米孔洞之總體積(可由AFM量測計算而得)。若油水雙疏結構其單位面積的孔洞體積過小,則無法蓄積足夠的空氣氣泡而致使油滴與表面接觸面積較大而影響油滴之滑動。若油水雙疏結構其單位面積的孔洞體積過大,則會導致奈米孔洞的孔洞壁有可能瓦解而形成柱狀結構以致無法以孔洞形式容納氣泡。 The oil-water double-drain structure formed by the above method has an area of a nanopore volume/oil-water double-pore structure of between 800 nm 3 /(300 nm×300 nm) and 250,000 nm 3 /(300 nm×300 nm). The above-mentioned hole volume is the total volume of the nano-holes per unit area (calculated by AFM measurement). If the volume of the pores per unit area of the oil-water double-drain structure is too small, sufficient air bubbles cannot be accumulated, so that the contact area of the oil droplets with the surface is large and the sliding of the oil droplets is affected. If the volume of the pores per unit area of the oil-water double-drain structure is too large, the pore walls of the nano-holes may collapse and form a columnar structure so that bubbles cannot be accommodated in the form of holes.

在一實施例中,上述油水雙疏結構對水與一般食用油的接觸角均大於90°,且對5~27μL的食用油(如大豆沙拉油或橄欖油等)的滑動角可小於5°(比如低至3.1°)。 In one embodiment, the oil-water double-drain structure has a contact angle of more than 90° to water and general edible oil, and the sliding angle of 5 to 27 μL of edible oil (such as soybean salad oil or olive oil) may be less than 5°. (eg as low as 3.1°).

一般雙疏表面的粗糙表面在接觸油膜時,其表面能差傾向分離油與雙疏表面。但在小油霧滴(粒徑nm~μm)要聚集成較大油滴(>μm)時,粗糙表面反而成為油滴聚合的阻力。然而本揭露的奈米孔洞內含空氣,可減少油膜的接觸面積,且表面修飾的低表面能材料可分離油膜與雙疏表面。 Generally, when the rough surface of the double sparse surface contacts the oil film, the surface energy difference tends to separate the oil from the double sparse surface. However, when small oil droplets (particle size nm~μm) are aggregated into larger oil droplets (>μm), the rough surface becomes the resistance of oil droplet polymerization. However, the nanopore of the present disclosure contains air to reduce the contact area of the oil film, and the surface modified low surface energy material can separate the oil film from the double surface.

為了讓本揭露之上述和其他目的、特徵、和優點能更明顯易懂,下文特舉數實施例配合所附圖示,作詳細說明如下: The above and other objects, features and advantages of the present invention will become more apparent and understood.

實施例 Example

實施例1(微米凹凸結構) Example 1 (micron concave-convex structure)

取面積為2cm×6cm且厚度為1mm的鋁片,浸入乙醇並超音波震盪10分鐘。取出鋁片後以去離子水洗滌,再浸入丙酮並超音波震盪10分鐘。取出鋁片後在室溫下自然乾燥待用。 An aluminum piece having an area of 2 cm × 6 cm and a thickness of 1 mm was taken, immersed in ethanol and ultrasonically shaken for 10 minutes. The aluminum piece was taken out, washed with deionized water, immersed in acetone and ultrasonically shaken for 10 minutes. The aluminum sheet was taken out and naturally dried at room temperature for use.

將上述前處理的鋁片連結至直流電源供應器的陽 極,而陰極為白金電極。將陽極與陰極置入0.06M NaCl中,二電極在溶液中相距2cm,且在進行第一陽極氧化蝕刻時以磁石緩慢攪拌NaCl溶液。 Connecting the pre-treated aluminum sheet to the anode of the DC power supply The pole is the platinum electrode. The anode and cathode were placed in 0.06 M NaCl, the two electrodes were 2 cm apart in solution, and the NaCl solution was slowly stirred with magnets during the first anodization etching.

通入4V電壓至電極以進行第一陽極氧化蝕刻,通電時間分別為5、10、15、20、30、40、50、60、120、與180分鐘。上述溫度不高於30℃,同時調控電壓大小(不超過8V)以保持電流密度於0.02~0.03A/cm2之間,反應結束後將鋁片以去離子水超音波震盪10分鐘以去除表面之氧化物,之後將其置於溫度120℃烘乾2小時。 A voltage of 4 V was applied to the electrodes for the first anodization etching, and the energization times were 5, 10, 15, 20, 30, 40, 50, 60, 120, and 180 minutes, respectively. The above temperature not higher than 30 ℃, while magnitude regulated voltage (not more than 8V) to maintain a current density at 0.02 ~ 0.03A / 2, between the end of the reaction cm aluminum foil with deionized water after sonicated for 10 minutes to remove surface The oxide was then dried at a temperature of 120 ° C for 2 hours.

以掃描式電子顯微鏡(SEM)分析第一陽極氧化蝕刻後的鋁片。當第一陽極氧化蝕刻時間為20分鐘時,可得鋁片表面部份被氧化成微米(1~10μm)等級的凹凸結構。第一陽極氧化蝕刻時間增加至40分鐘時,微米(1~10μm)等級的凹凸結構比例比第一陽極氧化蝕刻時間僅20分鐘的結果多。第一陽極氧化蝕刻時間為60分鐘時,大部份的表面已形成微米等級之凹凸結構。第一陽極氧化蝕刻時間為180分鐘時,可得到表面完全被蝕刻成微米等級的凹凸結構,其SEM照片如第1圖所示。以原子力顯微鏡(AFM)分析第一陽極氧化蝕刻180分鐘後的鋁片,可知其粗糙度最小平方和粗糙度(Rq)=799nm,中心線平均粗糙度(Ra)=628nm,且表面最高點與最低點之間的距離為2.8微米。 The first anodized etched aluminum sheet was analyzed by a scanning electron microscope (SEM). When the first anodizing etching time is 20 minutes, the surface portion of the aluminum sheet is oxidized to a micron (1 to 10 μm) grade uneven structure. When the first anodization etching time was increased to 40 minutes, the ratio of the microstructure of the micron (1 to 10 μm) grade was more than that of the first anodization etching time of only 20 minutes. When the first anodizing etching time is 60 minutes, most of the surface has formed a micron-scale uneven structure. When the first anodizing etching time was 180 minutes, the uneven structure in which the surface was completely etched into a micron order was obtained, and the SEM photograph thereof is shown in Fig. 1. The aluminum sheet after 180 minutes of the first anodizing etching was analyzed by atomic force microscopy (AFM), and the roughness minimum square roughness and roughness (Rq)=799 nm, the center line average roughness (Ra)=628 nm, and the highest point of the surface were observed. The distance between the lowest points is 2.8 microns.

實施例2(微米凹凸結構+奈米孔洞) Example 2 (micron concave-convex structure + nano hole)

取實施例1中經過180分鐘第一陽極氧化蝕刻的鋁片連結至直流電源供應器的陽極,而陰極為白金電極。將陽極與陰極 置入0.3M草酸中,且二電極在溶液中相距1cm。 The aluminum sheet subjected to the first anodization etching in Example 1 for 180 minutes was bonded to the anode of the DC power supply, and the cathode was a platinum electrode. Anode and cathode Placed in 0.3 M oxalic acid and the two electrodes are 1 cm apart in solution.

通入60伏特(V)至電極以進行第二陽極氧化蝕刻,通電時間分別為20、40、60、與120分鐘。第二陽極氧化蝕刻時溫度會上升,控制反應槽溫度不高於30℃,第二陽極氧化蝕刻結束後將鋁片以去離子水超音波震盪10分鐘以去除表面之氧化物,之後將其置於溫度120℃下烘乾120分鐘。 60 volts (V) was applied to the electrodes for a second anodization etch with energization times of 20, 40, 60, and 120 minutes, respectively. During the second anodizing etching, the temperature rises, and the temperature of the reaction bath is controlled to be no higher than 30 ° C. After the second anodizing etching, the aluminum sheet is vortexed with deionized water for 10 minutes to remove oxides on the surface, and then placed. Dry at 120 ° C for 120 minutes.

以SEM分析上述第二陽極氧化蝕刻後的鋁片。當第二陽極氧化蝕刻時間為20分鐘時,可得鋁片表面的凹凸結構上被蝕刻出奈米等級(直徑10nm至30nm)的孔洞。第二陽極氧化蝕刻時間增加至40分鐘時,奈米孔洞比第二陽極氧化蝕刻時間僅20分鐘的結果多。第二陽極氧化蝕刻時間為60分鐘時,大部份的表面已形成奈米孔洞。第二陽極氧化蝕刻時間為120分鐘時,可得到凹凸結構之表面完全被蝕刻成奈米孔洞。以AFM分析第二陽極氧化蝕刻120分鐘後的鋁片,可知其粗糙度Rq=1076nm,Ra=867nm,且表面最高點與最低點之間的距離為3.6微米。 The second anodized etched aluminum sheet was analyzed by SEM. When the second anodization etching time is 20 minutes, holes of a nanometer grade (10 nm to 30 nm in diameter) are etched on the uneven structure on the surface of the aluminum sheet. When the second anodization etching time was increased to 40 minutes, the nanopores had more results than the second anodization etching time of only 20 minutes. When the second anodizing etching time is 60 minutes, most of the surface has formed nanopores. When the second anodizing etching time is 120 minutes, the surface of the uneven structure can be completely etched into nanopores. The aluminum flakes after the second anodization etching for 120 minutes were analyzed by AFM, and the roughness Rq=1076 nm, Ra=867 nm, and the distance between the highest point and the lowest point of the surface was 3.6 μm.

將第二陽極氧化蝕刻120分鐘後的鋁片含浸於0.5wt%之1H,1H,2H,2H-過氟化十烷基-三氯化矽烷(FDTS)的正己烷溶液中,並以超音波震盪60分鐘,之後將其置於室溫乾燥10分鐘,接著再於溫度120℃下烘乾60分鐘,使上述氟化矽烷接枝至鋁片上。 The aluminum sheet after the second anodization etching for 120 minutes is immersed in 0.5 wt% of 1H, 1H, 2H, 2H-perfluorodecafluoro-decanedioxane (FDTS) in n-hexane solution, and ultrasonically After shaking for 60 minutes, it was dried at room temperature for 10 minutes, and then dried at a temperature of 120 ° C for 60 minutes to graft the above fluorinated decane onto the aluminum sheet.

以SEM分析接枝氟化矽烷後的鋁片,可知鋁片在接枝氟化矽烷前後的表面形態類似。在接枝氟化矽烷後,鋁片表面仍維持微米(1~10μm)等級的凹凸結構與凹凸結構上的奈米 等級(直徑10~30nm)孔洞。同時可由剖面觀察到微米的凹凸結構側壁表面具有奈米孔洞,如第2圖之SEM照片所示。經由能量散射光譜儀(EDS)分析接枝FDTS之前與之後的鋁片表面,可知F原子百分比由接枝前的~0%增加為接枝後的6.28%。 The aluminum sheet after grafting of fluorinated decane was analyzed by SEM, and it was found that the surface morphology of the aluminum sheet before and after grafting of fluorinated decane was similar. After the grafting of fluorinated decane, the surface of the aluminum sheet maintains a micron (1~10μm) grade of concave-convex structure and nano-structure on the concave-convex structure. Grade (10~30nm diameter) holes. At the same time, the surface of the side wall of the uneven structure observed by the cross section has a nanopore, as shown in the SEM photograph of Fig. 2. The surface of the aluminum sheet before and after grafting of the FDTS was analyzed by energy dispersive spectroscopy (EDS), and it was found that the percentage of F atoms increased from ~0% before grafting to 6.28% after grafting.

以AFM分析接枝FDTS後的鋁片,測量奈米等級(直徑10~20nm)孔洞的平均深度為為2.7nm,孔洞的平均直徑為15nm,且孔洞體積/鋁片的面積為3021nm3/(300nm×300nm)。測量接枝FDTS後的鋁片其表面對水及葡萄籽油之接觸角分別為150°及144°,量測方式參考Langmuir 2000,16,5754-5760或Colloids and Surfaces B:Biointerfaces 161(2018)324-330。 The aluminum sheet grafted with FDTS was analyzed by AFM, and the average depth of the hole of the nanometer grade (diameter 10-20 nm) was measured to be 2.7 nm, the average diameter of the pore was 15 nm, and the void volume/area of the aluminum sheet was 3021 nm 3 / ( 300 nm × 300 nm). The contact angle of the surface of the aluminum sheet after grafting FDTS to water and grape seed oil was 150° and 144°, respectively. For the measurement method, refer to Langmuir 2000, 16, 5754-5760 or Colloids and Surfaces B: Biointerfaces 161 (2018). 324-330.

實施例3(大面積(17cm×17cm)基材的微米凹凸結構+奈米孔洞) Example 3 (Micro-concave structure of a large area (17 cm × 17 cm) substrate + nano hole)

取面積為17cm×17cm且厚度為1mm的鋁片,含浸於葡萄糖酸鈉(5g/L)及NaOH(10g/L)為1:1的混合液中10分鐘,取出以水沖洗,再含浸於HNO3(68~70%):H2O=1:1中10分鐘,取出以水沖洗。 Take aluminum sheet with an area of 17cm × 17cm and a thickness of 1mm, immersed in a mixture of sodium gluconate (5g / L) and NaOH (10g / L) 1:1 for 10 minutes, taken out and rinsed with water, then impregnated HNO 3 (68~70%): H 2 O = 1:1 for 10 minutes, taken out and rinsed with water.

將上述前處理的鋁片連結至直流電源供應器的陽極,而陰極為白金電極。將陽極與陰極置入0.06M NaCl中,二電極在溶液中相距2cm,且在進行第一陽極氧化蝕刻時以磁石緩慢攪拌NaCl溶液。 The pre-treated aluminum sheet is attached to the anode of the DC power supply, and the cathode is a platinum electrode. The anode and cathode were placed in 0.06 M NaCl, the two electrodes were 2 cm apart in solution, and the NaCl solution was slowly stirred with magnets during the first anodization etching.

通入4V電壓至電極以進行第一陽極氧化蝕刻,通電時間為120分鐘。上述溫度不高於30℃,同時調控電壓大小(不超過8V)以保持電流密度於0.02~0.03A/cm2之間,反應結束後將鋁片以去離子水超音波震盪10分鐘以去除表面之氧化 物,之後將其置於溫度120℃烘乾2小時。經上述第一陽極氧化蝕刻後,形成微米凹凸結構於鋁片表面。 A voltage of 4 V was applied to the electrodes for the first anodization etching, and the energization time was 120 minutes. The above temperature is not higher than 30 ° C, and the voltage is regulated (not more than 8 V) to maintain the current density between 0.02 and 0.03 A/cm 2 . After the reaction is finished, the aluminum sheet is vortexed with deionized water for 10 minutes to remove the surface. The oxide was then dried at a temperature of 120 ° C for 2 hours. After the first anodization etching, the micro-concave structure is formed on the surface of the aluminum sheet.

將上述經過120分鐘第一陽極氧化的鋁片連結至直流電源供應器的陽極,而陰極為白金電極。將陽極與陰極置入0.3M草酸中,且二電極在溶液中相距1cm。 The first anodized aluminum sheet after 120 minutes was connected to the anode of the direct current power supply, and the cathode was a platinum electrode. The anode and cathode were placed in 0.3 M oxalic acid and the two electrodes were 1 cm apart in solution.

通入60伏特(V)至電極以進行第二陽極氧化蝕刻,通電時間為120分鐘。第二陽極氧化蝕刻時溫度會上升,控制反應槽溫度不高於30°。在第二陽極氧化蝕刻30分鐘後,最高電流密度調控為不可高於0.03A/cm2。第二陽極氧化蝕刻結束後將鋁片以去離子水超音波震盪10分鐘以去除表面之氧化物,之後將其置於溫度120℃下烘乾120分鐘。經上述第二陽極氧化蝕刻後,形成奈米孔洞於微米凹凸結構的表面。 60 volts (V) was applied to the electrode for a second anodization etch with an energization time of 120 minutes. During the second anodizing etching, the temperature rises and the temperature of the reaction bath is controlled to be no higher than 30°. In the second anodic oxide etch after 30 minutes, the regulation of the maximum current density is not greater than 0.03A / cm 2. After the second anodizing etch, the aluminum flakes were vortexed with deionized water for 10 minutes to remove oxides on the surface, which were then dried at a temperature of 120 ° C for 120 minutes. After the second anodization etching, a nanopore hole is formed on the surface of the micro-concave structure.

將第二陽極氧化蝕刻120分鐘後的鋁片含浸於0.5wt%之FDTS的己烷溶液中,並以超音波震盪60分鐘,之後將其置於室溫乾燥10分鐘,接著再於溫度120℃下烘乾60分鐘,使上述氟化矽烷接枝至鋁片上。 The aluminum piece after the second anodization etching for 120 minutes was immersed in a 0.5 wt% FDTS hexane solution, and oscillated with ultrasonic waves for 60 minutes, and then dried at room temperature for 10 minutes, and then at a temperature of 120 ° C. The above fluorinated decane was grafted onto an aluminum sheet by drying for 60 minutes.

測量接枝FDTS後的鋁片其表面對水及葡萄籽油之接觸角,分別為143°及125°,量測方式參考Langmuir 2000,16,5754-5760或Colloids and Surfaces B:Biointerfaces 161(2018)324-330。 The contact angle of the surface of the aluminum sheet after grafting FDTS to water and grape seed oil was measured at 143° and 125°, respectively. For the measurement method, refer to Langmuir 2000, 16, 5754-5760 or Colloids and Surfaces B: Biointerfaces 161 (2018). ) 324-330.

實施例4(大面積(17cm×42cm)基材的微米凹凸結構+奈米孔洞) Example 4 (micro-concave structure of a large area (17 cm × 42 cm) substrate + nano hole)

與實施例3類似,差別在於實施例4之基材面積增加至17cm×42cm。第一陽極氧化蝕刻(形成微米凹凸結構)、第二陽 極氧化蝕刻(形成奈米孔洞)、與接枝含氟矽烷的條件與實施例3相同,在此不贅述。 Similar to Example 3, the difference was that the substrate area of Example 4 was increased to 17 cm x 42 cm. First anodizing etching (forming micro-concave structure), second yang The conditions of the extreme oxidation etching (formation of nanopores) and the grafting of the fluorine-containing decane are the same as those of the third embodiment, and will not be described herein.

測量接枝FDTS後的鋁片其表面對水及葡萄籽油之接觸角,分別為148°及143°,量測方式參考Langmuir 2000,16,5754-5760或Colloids and Surfaces B:Biointerfaces 161(2018)324-330。 The contact angles of the surface of the aluminum sheet after grafting FDTS to water and grape seed oil were measured at 148° and 143°, respectively. For the measurement method, refer to Langmuir 2000, 16, 5754-5760 or Colloids and Surfaces B: Biointerfaces 161 (2018). ) 324-330.

實施例5 Example 5

取實施例1-4製備的試片進行油相的滑動角測試。取大豆沙拉油為測試用油,試驗時先將試片平放,接著於其表面點一滴大豆沙拉油(5~27μL),再緩慢舉起試片一側直至油滴滑動為止,再計算滑動角(以動態接觸角量測儀量之,型號VCA OPTIMA XE,廠牌AST Products,Inc)。上述滑動角越小,表示試片的疏油效果越好。實施例1的滑動角>45°最大,因其缺乏奈米孔洞且未接枝FDTS。實施例2的滑動角可小至3.1°,而實施例3的滑動角(5°)與實施例4的滑動角(5°)類似,顯示上述製程可應用於大面積的基材上,且製程形的結構具有良好的疏油特性。 The test pieces prepared in Examples 1-4 were subjected to a sliding angle test of the oil phase. Take soy salad oil as test oil. Place the test piece flat on the test, then place a drop of soy salad oil (5~27μL) on the surface, then slowly lift the test piece side until the oil drop slides, then calculate the sliding angle. (Measured by dynamic contact angle meter, model VCA OPTIMA XE, brand AST Products, Inc.). The smaller the above sliding angle, the better the oleophobic effect of the test piece. The sliding angle of Example 1 was >45° maximal due to its lack of nanopores and ungrafting of FDTS. The sliding angle of Embodiment 2 can be as small as 3.1°, and the sliding angle (5°) of Embodiment 3 is similar to the sliding angle (5°) of Embodiment 4, showing that the above process can be applied to a large-area substrate, and The process-shaped structure has good oleophobic properties.

比較例1 Comparative example 1

與實施例2類似,差別在第二陽極氧化蝕刻的電解液改為0.3M的磷酸。接枝FDTS後的微米結構表面呈現奈米柱狀結構而非奈米孔洞,故無法包覆空氣。試驗油滴在表面的接觸角>125°,但試片傾斜的角度>45°時油滴依然無法滑落。 Similar to Example 2, the difference was that the second anodically etched electrolyte was changed to 0.3 M phosphoric acid. The surface of the micro-structure after grafting FDTS exhibits a nano-columnar structure rather than a nano-porous hole, so the air cannot be coated. The contact angle of the test oil droplet on the surface is >125°, but the oil droplet still cannot slide down when the angle of the test piece is inclined to >45°.

比較例2 Comparative example 2

與實施例2類似,差別在於將FDTS置換為聚偏氟乙烯-六氟 丙烯共聚物(poly(vinylidene fluoride-co-hexafluoro-propylene,CAS.No.:9011-17-0,Aldrich),油滴在上述表面的滑動角>30°。 Similar to Example 2, the difference is that FDTS is replaced by polyvinylidene fluoride-hexafluoro A propylene copolymer (poly(vinylidene fluoride-co-hexafluoro-propylene, CAS. No.: 9011-17-0, Aldrich), the oil droplets have a sliding angle of >30° on the above surface.

雖然本揭露已以數個實施例揭露如上,然其並非用以限定本揭露,任何本技術領域中具有通常知識者,在不脫離本揭露之精神和範圍內,當可作任意之更動與潤飾,因此本揭露之保護範圍當視後附之申請專利範圍所界定者為準。 The present disclosure has been disclosed in the above several embodiments, but it is not intended to limit the disclosure, and any one skilled in the art can make any changes and refinements without departing from the spirit and scope of the disclosure. Therefore, the scope of protection of this disclosure is subject to the definition of the scope of the patent application.

Claims (12)

一種油水雙疏結構,包括:一微米凹凸結構;以及多個奈米孔洞,位於該微米凹凸結構的表面,其中該微米凹凸結構的粗糙度介於500nm至1500nm之間。 An oil-water double-drain structure comprises: a one-micron concave-convex structure; and a plurality of nano-holes located on a surface of the micro-concave structure, wherein the micro-concave structure has a roughness of between 500 nm and 1500 nm. 如申請專利範圍第1項所述之油水雙疏結構,其中該些奈米孔洞之直徑介於10nm至60nm之間,且奈米孔洞之深度介於2nm至35nm之間。 The oil-water double-drain structure according to claim 1, wherein the nano-holes have a diameter of between 10 nm and 60 nm, and the nano-holes have a depth of between 2 nm and 35 nm. 如申請專利範圍第1項所述之油水雙疏結構,其孔洞體積/油水雙疏結構的面積介於800nm3/(300nm×300nm)至250000nm3/(300nm×300nm)之間。 For example, in the oil-water double-sparing structure described in claim 1, the area of the pore volume/oil-water double-sparse structure is between 800 nm 3 / (300 nm × 300 nm) and 250,000 nm 3 / (300 nm × 300 nm). 如申請專利範圍第1項所述之油水雙疏結構,更包括氟化矽烷改質之該些奈米孔洞與該微米凹凸結構的表面。 The oil-water double-sparse structure according to claim 1, further comprising the nano-holes modified by the fluorinated decane and the surface of the micro-convex structure. 如申請專利範圍第4項所述之油水雙疏結構,其中該氟化矽烷的碳數為n,氟原子的數目為2n-3至2n+1之間,且n介於8~12之間。 The oil-water double-sparing structure according to claim 4, wherein the fluorinated decane has a carbon number of n, the number of fluorine atoms is between 2n-3 and 2n+1, and n is between 8 and 12. . 一種油水雙疏結構的形成方法,包括:(i)在鹵素鹽類的溶液中對一基材進行第一陽極氧化蝕刻,以形成一微米凹凸結構;以及(ii)在醋酸、草酸、檸檬酸、或上述之組合的溶液中對該微米凹凸結構進行第二陽極氧化蝕刻,以形成多個奈米孔洞於該微米凹凸結構的表面,其中微米凹凸結構的平均粗糙度(Ra)介於500nm至1500nm之間。 A method for forming an oil-water double-drain structure, comprising: (i) performing a first anodization etching on a substrate in a solution of a halogen salt to form a one-micron concave-convex structure; and (ii) in acetic acid, oxalic acid, citric acid Or a combination of the above combinations, the second anodizing structure is subjected to a second anodization etching to form a plurality of nanopores on the surface of the micro-concave structure, wherein the micro-concave structure has an average roughness (Ra) of 500 nm to Between 1500nm. 如申請專利範圍第6項所述之油水雙疏結構的形成方法,其中步驟(i)的鹵素鹽類包括NaCl、NaF、NaBr、KCl、KBr、或上述之組合,且鹵素鹽類的濃度介於0.04M至0.08M。 The method for forming an oil-water double-drain structure according to claim 6, wherein the halogen salt of the step (i) comprises NaCl, NaF, NaBr, KCl, KBr, or a combination thereof, and the concentration of the halogen salt is From 0.04M to 0.08M. 如申請專利範圍第6項所述之油水雙疏結構的形成方法,其中步驟(i)的第一陽極氧化蝕刻之電壓介於4V至8V之間,電流密度介於0.02A/cm2至0.03A/cm2之間,溫度介於10℃至30℃之間,且歷時1小時至3小時之間。 The method for forming an oil-water double-drain structure according to claim 6, wherein the first anodizing etching voltage of the step (i) is between 4V and 8V, and the current density is between 0.02A/cm 2 and 0.03. A / cm 2, between 10 deg.] C to a temperature between 30 ℃, and over a period of between 1-3 hours. 如申請專利範圍第6項所述之油水雙疏結構的形成方法,其中步驟(ii)的醋酸、草酸、檸檬酸、或上述之組合的濃度介於0.1M至0.5M之間。 The method for forming an oil-water double-sparse structure according to claim 6, wherein the concentration of acetic acid, oxalic acid, citric acid, or a combination thereof in the step (ii) is between 0.1 M and 0.5 M. 如申請專利範圍第6項所述之油水雙疏結構的形成方法,其中步驟(ii)的第二陽極氧化蝕刻之電壓介於30V至80V之間,電流密度介於0.005A/cm2至0.015A/cm2之間,溫度介於10℃至30℃之間,且歷時1小時至3小時之間。 The method for forming an oil-water double-drain structure according to claim 6, wherein the voltage of the second anodization etching in the step (ii) is between 30V and 80V, and the current density is between 0.005A/cm 2 and 0.015. A / cm 2, between 10 deg.] C to a temperature between 30 ℃, and over a period of between 1-3 hours. 如申請專利範圍第6項所述之油水雙疏結構的形成方法,更包括(iii)以氟化矽烷改質該些奈米孔洞與該微米凹凸結構的表面。 The method for forming an oil-water double-drain structure according to claim 6 further includes (iii) modifying the surface of the nano-holes and the micro-convex structure with fluorinated decane. 如申請專利範圍第11項所述之油水雙疏結構的形成方法,其中該氟化矽烷的碳數為n,氟原子的數目為2n-3至2n+1之間,且n介於8~12之間。 The method for forming an oil-water double-drain structure according to claim 11, wherein the fluorinated decane has a carbon number of n, the number of fluorine atoms is between 2n-3 and 2n+1, and n is between 8 and Between 12.
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