TWI671577B - Pixel stucture and light-emitting panel using the same - Google Patents

Abstract

A pixel structure includes a thin film transistor, an insulating layer, an auxiliary electrode, a first electrode, a pixel definition layer, an electro-excitation light structure, and a second electrode. The thin film transistor is located on a substrate. The insulating layer is located on the thin film transistor and has a first contact hole. The auxiliary electrode and the first electrode are formed on the first insulating layer, and the first electrode is electrically connected to the thin film transistor through the first contact hole. The pixel definition layer is located on the auxiliary electrode and the first electrode, and has a first opening and a second opening. The electrically excited light structure is located in the first opening. The second electrode is located on the pixel definition layer, and is electrically connected to the auxiliary electrode through the second opening.

Description

Pixel structure and light-emitting panel using same

The invention relates to a pixel structure and a light-emitting panel using the pixel structure.

With the advancement of technology, light-emitting diodes have become common and widely used components in commercial applications. As a light source, light-emitting diodes have many advantages, including low energy consumption, long service life, and fast switching. Therefore, traditional light sources have been gradually replaced by light-emitting diode light sources.

On the other hand, in addition to being a light source, light-emitting diode technology has begun to be introduced into display technology due to its advantages such as self-emissive, high brightness, and simple process. For example, light emitting diodes of different colors can be used as pixels of the display panel, thereby replacing the liquid crystal material. In this regard, display panels using light-emitting diodes as pixels are also suitable for thinning product thicknesses, for making large-sized products, and for making flexible products, which are in the market of electronic products. Has a certain degree of development potential. Therefore, the application of light-emitting diodes to display technologies has become an important development goal in related fields.

An embodiment of the present invention provides a pixel structure, wherein the pixel structure includes a thin film transistor, a first electrode, an auxiliary electrode, an electrically excited light structure, and a second electrode. The electro-excitation light structure is disposed between the first electrode and the second electrode, and a positive bias can be applied to the light through the first electrode and the second electrode to cause light emission. The first electrode is electrically connected to the thin film transistor. The auxiliary electrode is electrically connected to the second electrode, wherein the first electrode and the auxiliary electrode can be formed by patterning the same metal layer, thereby reducing the need for the number of photomasks in the manufacturing process. The auxiliary electrode and the second electrode may be connected to their power supply terminals separately or together. With this configuration, the current density distribution of the second electrode can be enhanced, thereby preventing the phenomenon of uneven brightness due to the voltage decay of the pixel structure.

An embodiment of the present invention provides a pixel structure including a thin film transistor, an insulating layer, an auxiliary electrode, a first electrode, a pixel definition layer, an electro-optical light structure, and a second electrode. The thin film transistor is located on a substrate. The insulating layer is located on the thin film transistor and has a contact hole. The auxiliary electrode and the first electrode are formed on the insulating layer, and the first electrode is electrically connected to the thin film transistor through a contact hole. The pixel definition layer is located on the auxiliary electrode and the first electrode, and has a first opening and a second opening. The electrically excited light structure is located in the first opening. The second electrode is located on the pixel definition layer, and is electrically connected to the auxiliary electrode through the second opening.

In some embodiments, the second electrode is electrically connected to the first voltage source, the first voltage source is adapted to provide the first voltage, the auxiliary electrode is electrically connected to the second voltage source, and the second voltage source is adapted to provide the second voltage .

In some embodiments, the second voltage is less than the first voltage.

In some embodiments, the material of the auxiliary electrode and the first electrode is The material includes indium tin oxide, indium zinc oxide, a metal or an alloy thereof, and the auxiliary electrode and the first electrode have the same material.

In some embodiments, the pixel structure further includes an auxiliary structure. The auxiliary structure is located in the second opening and is located between the second electrode and the auxiliary electrode.

In some embodiments, the electrically excited light structure includes a light emitting layer, and the auxiliary structure includes an electron transport layer and an electron injection layer and does not have any light emitting layer.

In some embodiments, the auxiliary structure further includes a hole transport layer and a hole injection layer.

In some embodiments, the vertical distance between the first electrode and the second electrode is d1 in the first opening, and the vertical distance between the auxiliary electrode and the second electrode is d2 in the second opening, and d1> d2.

In some embodiments, the auxiliary electrode and the second electrode are electrically connected to a common voltage source.

An embodiment of the present invention provides a pixel structure including a thin film transistor, an insulating layer, a first electrode, an auxiliary electrode, a light emitting layer, and a second electrode. The thin film transistor is located on a substrate and has a source. The insulating layer is located on the thin film transistor and has a contact hole. The first electrode is located on the insulation layer and is electrically connected to the source electrode through the contact hole. The auxiliary electrode is located on the insulating layer. The light emitting layer is disposed on the first electrode. The second electrode is disposed on the auxiliary electrode and the light-emitting layer, wherein the first electrode is separated from the second electrode by a first distance d1, and the auxiliary electrode is separated from the second electrode by a second distance d2, and d1> d2.

An embodiment of the present invention provides a light-emitting panel including a pixel structure and an auxiliary line, wherein the auxiliary line is electrically connected to the auxiliary electrode.

100A, 100B, 100C, 100D‧‧‧light-emitting panel

101‧‧‧ substrate

102‧‧‧metal pattern layer

103‧‧‧ buffer layer

104‧‧‧ thin film transistor

105‧‧‧First gate insulation

106‧‧‧Second gate insulation layer

108‧‧‧ Interlayer dielectric layer

109A‧‧‧First through hole

109B‧‧‧Second through hole

110A‧‧‧Drain electrode

110B‧‧‧Source electrode

112‧‧‧ Insulation

114‧‧‧contact hole

120‧‧‧first electrode

122‧‧‧Auxiliary electrode

124‧‧‧Pixel Definition Layer

126‧‧‧electrically excited light structure

128‧‧‧Light-emitting layer

130‧‧‧ the first opening

132‧‧‧Second opening

134‧‧‧Second electrode

135‧‧‧Auxiliary line

136‧‧‧first electron transport layer

138‧‧‧first electron injection layer

140‧‧‧ auxiliary structure

142‧‧‧Second electron transport layer

144‧‧‧Second electron injection layer

146‧‧‧third electron transport layer

148‧‧‧third electron injection layer

150‧‧‧first hole injection layer

152‧‧‧The first hole transmission layer

154‧‧‧Second hole injection layer

156‧‧‧Second hole transmission layer

158‧‧‧Third hole injection layer

160‧‧‧The third hole transmission layer

202‧‧‧first voltage source

204‧‧‧Second voltage source

206‧‧‧Common voltage source

1B-1B‧‧‧line segment

P‧‧‧ pixel structure

G1‧‧‧first gate

G2‧‧‧Second gate

S‧‧‧Source area

D‧‧‧ Drain

SC‧‧‧Channel area

S1, S2, S3, S4‧‧‧ lower surface

d1, d2‧‧‧ distance

FIG. 1A is a schematic top view of a light emitting panel according to a first embodiment of the present invention.

FIG. 1B is a schematic cross-sectional view taken along line 1B-1B in FIG. 1A.

FIG. 1C is a schematic diagram when the pixel structure of FIG. 1B is driven.

FIG. 2 is a schematic cross-sectional view illustrating a light-emitting panel according to a second embodiment of the present invention, and its cross-sectional position is the same as that of FIG. 1B.

FIG. 3 is a schematic cross-sectional view illustrating a light-emitting panel according to a third embodiment of the present invention, and its cross-sectional position is the same as that of FIG. 1B.

FIG. 4 is a schematic top view of a light emitting panel according to a fourth embodiment of the present invention.

In the following, a plurality of embodiments of the present invention will be disclosed graphically. For the sake of clarity, many practical details will be described in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, in order to simplify the drawings, some conventional structures and components will be shown in the drawings in a simple and schematic manner. In addition, for the convenience of the reader, the dimensions of the elements in the drawings are not drawn according to actual proportions.

Please refer to FIG. 1A and FIG. 1B together. FIG. 1A is a schematic top view illustrating a light-emitting panel 100A according to a first embodiment of the present invention, and FIG. 1B is a schematic cross-sectional view taken along line 1B-1B in FIG. 1A. The light-emitting panel 100A can achieve the function of displaying an image by the color light emitted by the light-emitting diode. The light-emitting panel includes a substrate 101, a pixel structure P, a first voltage source 202, and a second voltage source 204. The pixel structure P is located on the substrate 101, that is, the substrate 101 can be regarded as the base of the pixel structure P.

The pixel structure P includes a metal pattern layer 102, a buffer layer 103, a thin film transistor 104, a first gate insulating layer 105, a second gate insulating layer 106, an interlayer dielectric layer 108, a drain electrode 110A, and a source electrode. 110B, an insulating layer 112, a first electrode 120, an auxiliary electrode 122, an electro-excitation light structure 126, a pixel definition layer 124, and a second electrode 134.

The metal pattern layer 102, the buffer layer 103, and the thin film transistor 104 are located on the substrate 101. The buffer layer 103 covers the metal pattern layer 102, and the thin film transistor 104 is located on the buffer layer 103. The metal pattern layer 102 can provide a light shielding effect to the thin film transistor 104. For example, when the substrate 101 is made of a translucent material, such as a glass substrate, the metal pattern layer 102 can shield the light traveling from the substrate 101 to the thin film transistor 104, thereby preventing the thin film transistor 104 from being caused by the light leakage effect. Negative impact.

The thin film transistor 104 of this embodiment is a double-gate transistor, which includes a first gate G1, a second gate G2, a source region S, a drain region D, and a channel region SC. The source region S, the drain region D, and the channel region SC are located on the buffer layer 103 and can be formed from the same layer body. The source region S, the drain region D, and the channel region SC can be defined by adjusting the carrier concentration of the same layer body by a diffusion process. The first gate insulating layer 105 and the first gate G1 are located on the channel region SC. The second gate insulating layer 106 covers the source region S, the drain region D, the first gate insulating layer 105, and the first The gate G1 and the second gate G2 are located on the second gate insulating layer 106.

The structure of the thin-film transistor 104 described above is merely an example. In addition to the above-mentioned structure, the thin-film transistor 104 of the present embodiment can also use other types of transistors, such as a deformation of a double-gate transistor and a bottom-gate transistor. Or its deformation, top-gate transistor or its deformation or other suitable transistor. In addition, the material of the channel region SC may also be a single layer or a multilayer structure, and the material includes amorphous silicon, single crystal silicon, microcrystalline silicon, polycrystalline silicon, organic semiconductor materials, oxide semiconductor materials, nano carbon tubes, or other suitable materials. s material.

The interlayer dielectric layer 108 is located on the buffer layer 103 and the second gate insulating layer 106 and covers the thin film transistor 104, and the drain electrode 110A and the source electrode 110B are located on the interlayer dielectric layer 108, among which the interlayer The dielectric layer 108 and the second gate insulating layer 106 may have first through holes 109A and second through holes 109B, so that the drain electrode 110A and the source electrode 110B can pass through the first through holes 109A and the second The through hole 109B is electrically connected to the drain region D and the source region S of the thin film transistor 104. In addition, the material of the interlayer dielectric layer 108 includes an inorganic material, such as silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or a combination thereof.

The insulating layer 112 is located on the thin film transistor 104, the interlayer dielectric layer 108, the drain electrode 110A and the source electrode 110B, and has a contact hole 114. The material of the insulating layer 112 may include inorganic materials, such as silicon oxide, nitrogen, and the like. Silicon oxide, silicon oxynitride, other suitable materials, or a combination thereof.

The first electrode 120 and the auxiliary electrode 122 are formed on the insulating layer 112. The first electrode 120 can be electrically connected to the source region S of the thin film transistor 104 through the contact hole 114 and the source electrode 110B. First electrode 120 and auxiliary electrode 122 can be formed of the same layer and have the same material, for example, it can be formed by patterning the same metal layer, and the formed first electrode 120 and auxiliary electrode 122 are separated from each other. Since the first electrode 120 and the auxiliary electrode 122 can be formed from the same layer, they can be patterned through the same mask process, thereby reducing the number of masks required for the pixel structure P process. The layer forming the first electrode 120 and the auxiliary electrode 122 may include a transparent conductive material, such as indium tin oxide, indium zinc oxide, zinc oxide, carbon nanotubes, indium gallium zinc oxide, or other suitable materials. However, this disclosure is not limited to this. If the light emitting direction of the light-emitting panel 100A is upward (that is, the light emitting direction is substantially parallel to the direction in which the substrate 101 is directed to the insulating layer 112), a layered body of the first electrode 120 and the auxiliary electrode 122 is formed. Non-transparent conductive materials may also be included, such as metals, alloys, or other suitable materials, so as to improve the conductivity of the first electrode 120 and the auxiliary electrode 122.

The pixel definition layer 124 is located on the first electrode 120 and the auxiliary electrode 122 and has a first opening 130 and a second opening 132. When the pixel structure P is viewed from the top (ie, for example, the viewing angle of FIG. 1A), the first The size of the opening 130 may be larger than the size of the second opening 132. Or, when the pixel structure P is viewed from above, the area of the first electrode 120 located below the first opening 130 is larger than that of the second electrode 132. Area of the auxiliary electrode 122. The material of the pixel definition layer 124 may include an inorganic material, such as silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or a combination thereof.

The electrically excited light structure 126 is located in the first opening 130 and contacts the first electrode 120. The electrically excited light structure 126 can emit light by being applied with a positive bias. For example, the electro-excitation light structure 126 may include a light-emitting layer 128, where the light-emitting layer 128 may include an organic material, and may be combined by a mechanism of electrons and holes. Come glow. The light emitting layer 128 can be formed in the first opening 130 through a deposition method, and the deposition position of the light emitting layer 128 is not located in the second opening 132. However, the disclosure is not limited thereto, and the light-emitting layer 128 may also be formed by other methods, such as by inkjet printing or vapor deposition.

The second electrode 134 is located on the pixel definition layer 124 and electrically connects the electrically excited light structure 126 and the auxiliary electrode 122 through the first opening 130 and the second opening 132, respectively. Specifically, the second electrode 134 extends into the first opening 130 and into the second opening 132. In the first opening 130, the second electrode 134 directly contacts the electro-excitation light structure 126, that is, the second electrode 134 directly contacts the light emitting layer 128, and in the second opening 132, the second electrode 134 directly contacts the auxiliary electrode 122. The material of the second electrode 134 may include a transparent conductive material or a non-transparent conductive material, wherein the transparent conductive material is, for example, indium tin oxide, indium zinc oxide, zinc oxide, nanometer carbon tube, indium gallium zinc oxide, or other suitable materials. Non-transparent conductive materials are, for example, metals, alloys, or other suitable materials.

In addition, since the light-emitting layer 128 is deposited in the first opening 130 but not in the second opening 132, the height of the second electrode 134 in the first opening 130 relative to the first electrode 120 may be different from that of the second opening. The height of the second electrode 134 in the 132 relative to the auxiliary electrode 122. For example, the lower surface S1 of the first electrode 120 contacts the insulating layer 112, and the vertical distance from the lower surface S1 of the first electrode 120 to the lower surface S2 of the second electrode 134 in the first opening 130 (or the first electrode) The distance between the lower surface S1 of 120 and the lower surface S2 of the second electrode 134) is the distance d1, and the lower surface S3 of the auxiliary electrode 122 is in contact with the insulating layer 112, and the lower surface S3 of the auxiliary electrode 122 to the second opening 132 The vertical distance between the lower surface S4 of the second electrode 134 inside (or the lower surface S3 of the auxiliary electrode 122 and the second electrode The distance between the lower surfaces S4 of 134) is a distance d2, where the distance d1 is greater than the distance d2.

With the above configuration, the influence of the pixel structure P due to IR drop can be reduced, thereby preventing the brightness unevenness of the light emitting panel 100A. For example, as shown in FIG. 1A, the light-emitting panel 100A may further include auxiliary lines 135, wherein the auxiliary lines 135 are electrically connected to the auxiliary electrodes 122. The auxiliary line 135 and the auxiliary electrode 122 may be formed from the same layer, for example, they may be formed by patterning the same metal layer.

The second electrode 134 can be electrically connected to the first voltage source 202. The first voltage source 202 is adapted to provide a first voltage to the second electrode 134, that is, the first voltage source 202 can be regarded as a power supply terminal of the second electrode 134. In some embodiments, the position of the power supply terminal and the positions of the plurality of first electrodes 120 and the plurality of auxiliary electrodes 122 are located on the same side of the substrate 101 (see FIG. 1B), thereby facilitating the design of the frame of the light-emitting panel 100A. Or route. The plurality of auxiliary electrodes 122 can be electrically connected to each other through the auxiliary line 135 and are commonly electrically connected to the second voltage source 204. The second voltage source 204 is adapted to provide a second voltage to the auxiliary electrode 122, that is, the second voltage. The source 204 can be regarded as a power supply terminal of the auxiliary electrode 122. The second voltage may be less than the first voltage.

Please see FIG. 1A and FIG. 1C at the same time. FIG. 1C shows a schematic diagram when the pixel structure P of FIG. 1B is driven. The first electrode 120 can be applied with a driving voltage through the driving thin film transistor 104, wherein the driving voltage is greater than the first voltage, that is, the driving voltage is positive relative to the first voltage, thereby applying a positive bias voltage to the electrically excited light structure 126. When the electrically excited light structure 126 is caused to emit light due to the positive bias, the first electrode 120 and the second electrode 134 are electrically excited to the light junction. Structure 126 can be considered as its anode and cathode. In addition, when a positive bias is applied to the electrically excited light structure 126 through the first electrode 120 and the second electrode 134, the flow of electrons flowing from the power-supply terminal of the second electrode 134 into the second electrode 134 can be the same as that in FIG. 1C. The electron flow E1 is shown.

On the other hand, since the second voltage supplied to the auxiliary electrode 122 is smaller than the first voltage supplied to the second electrode 134, a second electron current E2 flowing from the auxiliary electrode 122 to the second electrode 134 can be generated. In this regard, since the first electron flow E1 and the second electron flow E2 are both electron flows flowing into the second electrode 134, the first electron flow E1 and the second electron flow E2 can be collected into a third electron in the second electrode 134. The current E3 increases the current density in the second electrode 134 to reduce the influence of the pixel structure P due to the voltage decay, thereby preventing the brightness unevenness of the light-emitting panel 100A.

That is, by forming the auxiliary electrode 122 and electrically connecting the second electrode 134 to the auxiliary electrode 122, the auxiliary electrode 122 can import electrons to the second electrode 134 through its power supply terminal, thereby increasing the current in the second electrode 134. Density to reduce the negative effects of voltage decay.

Please see FIG. 2 again. FIG. 2 is a schematic cross-sectional view illustrating a light-emitting panel 100B according to a third embodiment of the present invention, and the cross-sectional position is the same as that of FIG. 1B. At least one difference between this embodiment and the first embodiment is that the pixel structure P of the light-emitting panel 100B of this embodiment further includes an auxiliary structure 140. The auxiliary structure 140 is located in the second opening 132 and is located between the auxiliary electrode 122 and the second electrode 134. In addition, the electrically excited light structure 126 of the pixel structure P further includes a layer body that helps to improve the light emitting efficiency.

Specifically, the electrically excited light structure 126 further includes The first electron transport layer 136, the first electron injection layer 138, the first hole injection layer 150, and the first hole transmission layer 152 in the port 130. The first hole injection layer 150, A hole transport layer 152, a light emitting layer 128, a first electron transport layer 136, and a first electron injection layer 138 are sequentially stacked on the first electrode 120, and the first electron injection layer 138 contacts the second electrode 134.

The auxiliary structure 140 includes a second electron transport layer 142 and a second electron injection layer 144 located in the second opening 132, wherein the second electron transport layer 142 and the second electron injection layer 144 of the auxiliary structure 140 are sequentially stacked on the auxiliary electrode 122. And the second electron injection layer 144 is in contact with the second electrode 134. In addition, the auxiliary structure 140 does not have any light emitting layer, hole injection layer, and hole transmission layer. The pixel structure P further includes a third electron transport layer 146 and a third electron injection layer 148, and the third electron transport layer 146 and the third electron injection layer 148 are sequentially stacked on the pixel definition layer 124 and located on the pixel The second electrode 134 above the defining layer 124 covers the third electron injection layer 148.

The first electron transport layer 136, the second electron transport layer 142, and the third electron transport layer 146 may be formed from the same layer. For example, the first electron transport layer 136, the second electron transport layer 142, and the third electron transport layer 146 may be formed through the same deposition process, wherein a portion deposited in the first opening 130 is the first electron transport layer 136, and is deposited on A portion inside the second opening 132 is the second electron transport layer 142, and a portion deposited on the surface of the pixel definition layer 124 is the third electron transport layer 146. Similarly, the first electron injection layer 138, the second electron injection layer 144, and the third electron injection layer 148 may be formed from the same layer, for example, they may be formed through the same deposition process.

In this configuration, the electrically excited light structure 126 can pass through the first electron The transmission layer 136, the first electron injection layer 138, the first hole injection layer 150, and the first hole transmission layer 152 improve the light emitting efficiency of the light emitting layer 128. On the other hand, the auxiliary electrode 122 and the second electrode 134 can still be conducted through the auxiliary structure 140, thereby reducing the negative effect of the pixel structure P due to the voltage decay.

On the other hand, in this embodiment, the vertical distance from the lower surface S1 of the first electrode 120 to the lower surface S2 of the second electrode 134 in the first opening 130 (or the lower surface S1 of the first electrode 120 and the second electrode The distance between the lower surface S2 of 134) is the distance d1, and the vertical distance from the lower surface S3 of the auxiliary electrode 122 to the lower surface S4 of the second electrode 134 in the second opening 132 (or the lower surface S3 of the auxiliary electrode 122) The distance from the lower surface S4 of the second electrode 134) is a distance d2, and the distance d1 is still greater than the distance d2.

Please refer to FIG. 3 again. FIG. 3 is a schematic cross-sectional view illustrating a light-emitting panel 100C according to a third embodiment of the present invention, and its cross-sectional position is the same as that of FIG. 1B. At least one difference between this embodiment and the third embodiment is that the auxiliary structure 140 of this embodiment includes more layers.

Specifically, the auxiliary structure 140 further includes a second hole injection layer 154 and a second hole transmission layer 156 located in the second opening 132, wherein the second hole injection layer 154 and the second hole transmission of the auxiliary structure 140 The layer 156, the second electron transport layer 142, and the second electron injection layer 144 are sequentially stacked on the auxiliary electrode 122, and the second electron injection layer 144 contacts the second electrode 134. In addition, the auxiliary structure 140 still does not have any light emitting layer. The pixel structure P further includes a third hole injection layer 158 and a third hole transmission layer 160, and the third hole injection layer 158, the third hole transmission layer 160, the third electron transmission layer 146, and the third electron injection Layer 148 is sequentially stacked on the pixel definition layer 124 and is located above the pixel definition layer 124 The second electrode 134 is covered on the third electron injection layer 148. In this configuration, the auxiliary electrode 122 and the second electrode 134 can still be conducted through the auxiliary structure 140, thereby reducing the negative effect of the pixel structure P due to the voltage decay.

FIG. 4 is a schematic top view of a light emitting panel 100D according to a fourth embodiment of the present invention. At least one difference between this embodiment and the first embodiment is that the auxiliary electrode 122 and the second electrode 134 of this embodiment are connected to a common voltage source 206, so as to be electrically connected to the common voltage source 206 in common, wherein the common voltage source 206 It may be adapted to provide the auxiliary electrode 122 with the same voltage as the second electrode 134. In this configuration, the current density distribution of the second electrode 134 can be improved through the auxiliary electrode 122, thereby reducing the negative effect of the pixel structure P due to the voltage decay.

In summary, the light-emitting panel of at least one embodiment of the present invention includes a pixel structure, wherein the pixel structure includes a thin film transistor, a first electrode, an auxiliary electrode, an electro-excitation light structure, and a second electrode. The electro-excitation light structure is disposed between the first electrode and the second electrode, and a positive bias can be applied to the light through the first electrode and the second electrode to cause light emission. The first electrode is electrically connected to the thin film transistor. The auxiliary electrode is electrically connected to the second electrode, wherein the first electrode and the auxiliary electrode can be formed by patterning the same metal layer, thereby reducing the need for the number of photomasks in the manufacturing process. The auxiliary electrode and the second electrode may be connected to their power supply terminals separately or together. With this configuration, the current density distribution of the second electrode can be enhanced, thereby improving the problem of uneven brightness caused by the voltage decay of the pixel structure.

Although the present invention has been disclosed in various embodiments as above, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Protection range Wei Dang shall be determined by the scope of the attached patent application.

Claims (13)

A pixel structure includes: a thin film transistor on a substrate; a first insulating layer on the thin film transistor having a contact hole; an auxiliary electrode and a first electrode formed on the first On the insulating layer, the first electrode is electrically connected to the thin film transistor through the contact hole; a pixel definition layer is located on the auxiliary electrode and the first electrode, and has a first opening and a second electrode. An opening; an electrically excited light structure located in the first opening; a second electrode located on the pixel definition layer and electrically connected to the auxiliary electrode through the second opening; and an auxiliary structure located in the The second opening is located between the second electrode and the auxiliary electrode. The pixel structure according to item 1 of the scope of patent application, wherein the second electrode is electrically connected to a first voltage source, the first voltage source is adapted to provide a first voltage, and the auxiliary electrode is electrically connected to a A second voltage source, the second voltage source is adapted to provide a second voltage, and the second electrode is electrically connected to the electro-optical structure through the first opening. The pixel structure according to item 2 of the patent application scope, wherein the second voltage is smaller than the first voltage. The pixel structure according to item 1 of the scope of patent application, wherein the material of the auxiliary electrode and the first electrode includes indium tin oxide, indium zinc oxide, a metal or an alloy thereof, and the auxiliary electrode and the first electrode have the same material. The pixel structure according to item 1 of the patent application scope, wherein the electro-excitation light structure includes a light emitting layer, and the auxiliary structure includes an electron transport layer and an electron injection layer and does not have any light emitting layer. The pixel structure according to item 5 of the patent application scope, wherein the auxiliary structure further includes a hole transmission layer and a hole injection layer. The pixel structure according to item 1 of the scope of patent application, wherein in the first opening, the vertical distance from the lower surface of the first electrode to the lower surface of the second electrode is d1, in the second opening, The vertical distance between the lower surface of the auxiliary electrode and the lower surface of the second electrode is d2, and d1> d2. The pixel structure according to item 1 of the scope of the patent application, wherein the auxiliary electrode and the second electrode are electrically connected to a common voltage source. A pixel structure includes: a thin film transistor on a substrate; a first insulating layer on the thin film transistor having a contact hole; an auxiliary electrode and a first electrode formed on the first On the insulating layer, the first electrode is electrically connected to the thin film transistor through the contact hole; a pixel definition layer is located on the auxiliary electrode and the first electrode, and has a first opening and a second electrode. An opening; an electrically excited light structure located in the first opening; and a second electrode located on the pixel definition layer and electrically connected to the auxiliary electrode through the second opening, wherein the second electrode is electrically Is connected to a first voltage source, the first voltage source is adapted to provide a first voltage, the auxiliary electrode is electrically connected to a second voltage source, the second voltage source is adapted to provide a second voltage, the first The two electrodes are electrically connected to the electrically excited light structure through the first opening. The pixel structure according to item 9 of the scope of patent application, wherein in the first opening, the vertical distance from the lower surface of the first electrode to the lower surface of the second electrode is d1, in the second opening, The vertical distance between the lower surface of the auxiliary electrode and the lower surface of the second electrode is d2, and d1> d2. A pixel structure includes: a thin film transistor on a substrate; a first insulating layer on the thin film transistor having a contact hole; an auxiliary electrode and a first electrode formed on the first On the insulating layer, the first electrode is electrically connected to the thin film transistor through the contact hole; a pixel definition layer is located on the auxiliary electrode and the first electrode, and has a first opening and a second electrode. An opening; an electrically excited light structure located in the first opening; and a second electrode located on the pixel definition layer and electrically connected to the auxiliary electrode through the second opening, wherein the auxiliary electrode is connected to the auxiliary electrode The second electrode is electrically connected to a common voltage source. The pixel structure according to item 11 of the scope of patent application, wherein in the first opening, the vertical distance from the lower surface of the first electrode to the lower surface of the second electrode is d1, in the second opening, The vertical distance between the lower surface of the auxiliary electrode and the lower surface of the second electrode is d2, and d1> d2. A light-emitting panel includes: a plurality of pixel structures according to any one of claims 1 to 12; and an auxiliary line electrically connected to the auxiliary electrodes.