TWI665767B - A heatsink device to increase pulling force - Google Patents

A heatsink device to increase pulling force Download PDF

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Publication number
TWI665767B
TWI665767B TW104104448A TW104104448A TWI665767B TW I665767 B TWI665767 B TW I665767B TW 104104448 A TW104104448 A TW 104104448A TW 104104448 A TW104104448 A TW 104104448A TW I665767 B TWI665767 B TW I665767B
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Taiwan
Prior art keywords
opening
heat sink
hole
sink device
substrate
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TW104104448A
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Chinese (zh)
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TW201630129A (en
Inventor
黃琮琳
楊肇煌
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旭宏科技有限公司
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Priority to TW104104448A priority Critical patent/TWI665767B/en
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Publication of TWI665767B publication Critical patent/TWI665767B/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19105Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

一種具有增加拉拔力之散熱片裝置,適用於使用一黏著劑黏貼於一基板上,並包含一第一主體單元,及複數第一拉拔單元。該第一主體單元包括一第一主體。每一第一拉拔單元包括一貫穿該第一主體的第一通孔、一設置於該第一通孔上方之第一上開口、一設置於該第一通孔下方之第一下開口,及一連接該第一上開口與該第一下開口之第一環繞壁,該第一上開口的開口面積大於該第一下開口,當該第一主體之第一下表面黏貼於該基板時,該黏著劑可由該第一下開口進入該第一通孔後凝固,並與該第一環繞壁形成一拉拔力,以使該第一主體單元不易自該基板脫落。 A heat sink device with increased drawing force is suitable for being adhered to a substrate using an adhesive, and includes a first body unit and a plurality of first drawing units. The first body unit includes a first body. Each first drawing unit includes a first through hole penetrating the first body, a first upper opening provided above the first through hole, and a first lower opening provided below the first through hole. And a first surrounding wall connecting the first upper opening and the first lower opening, the opening area of the first upper opening is larger than the first lower opening, and when the first lower surface of the first body is adhered to the substrate The adhesive can solidify after entering the first through hole from the first lower opening, and form a pulling force with the first surrounding wall, so that the first main body unit cannot easily fall off the substrate.

Description

具有增加拉拔力之散熱片裝置 Radiator device with increased pulling force

本發明是有關於一種散熱片裝置,特別是指一種具有增加拉拔力之散熱片裝置。 The present invention relates to a heat sink device, in particular to a heat sink device having an increased pulling force.

隨著半導體製程的日新月異,現有的半導體元件整體之體積逐漸縮小且效能逐漸提升,其半導體元件運作時所產生的熱量會因效能提升而增加,為了避免半導體元件因熱量無法排除而導致半導體元件燒壞,半導體元件的上方會黏貼金屬材質散熱片來提升半導體元件的散熱效果。 With the rapid progress of the semiconductor manufacturing process, the overall volume of existing semiconductor devices has gradually decreased and their performance has gradually improved. The heat generated during the operation of their semiconductor devices will increase due to the efficiency improvement. In order to avoid the semiconductor devices being burned due to the heat that cannot be ruled out. Bad, metal heat sinks will be pasted on the top of the semiconductor element to improve the heat dissipation effect of the semiconductor element.

參閱圖1,為一傳統散熱片10使用一黏著劑11與一基板12連接在一起,且使用一導熱材質13與一半導體晶片14連貼在一起,用以將該半導體晶片14運作時所產生的熱量經由該散熱片10傳導至外界散熱,以維持半導體晶片14工作時的溫度不會太高,避免高溫造成該半導體晶片14因此燒壞。 Referring to FIG. 1, a conventional heat sink 10 is connected with an adhesive 11 and a substrate 12, and a thermally conductive material 13 is attached to a semiconductor wafer 14 to generate the semiconductor wafer 14 during operation. The heat is conducted to the outside through the heat sink 10 to maintain the temperature of the semiconductor wafer 14 during operation, so as to prevent the semiconductor wafer 14 from being burned due to the high temperature.

此外,國際汽車推動小組(IATF)和有關國家汽車工業協會(ANFIA、AIAG、CCFA、FIEV、SMMT和VDA-QMC)為將來汽車業的品質管理系統驗證建立全球統一的標準,於1999年3月制定了ISO/TS16949的技術規範,其目的在於為全球的汽車工業尋求一種統一的供應商品質管理系統。ISO/TS16949的技術規範適用於整個汽車供應鏈製造商,其該技術規範包括了使用於車輛中電子產品的規範範疇。 In addition, the International Automobile Promotion Group (IATF) and relevant national automobile industry associations (ANFIA, AIAG, CCFA, FIEV, SMMT, and VDA-QMC) established a global unified standard for future quality management system verification in the automotive industry. Established the technical specifications of ISO / TS16949, the purpose of which is to seek a unified supplier quality management system for the global automotive industry. The technical specifications of ISO / TS16949 apply to manufacturers of the entire automotive supply chain. The technical specifications include the scope of specifications for electronic products used in vehicles.

續上所述,由於汽車會使用於許多環境中,包含極熱、極凍、極乾燥與極潮濕等極端氣候,以及極端的氣候變化,因此ISO/TS16949之技術規範了汽車上使用 的所有零件,其必須比一般產品中所使用的零件標準更高以抵抗嚴苛的環境變化,包含著電子零件中與散熱片的黏著技術規範,導致一般半導體散熱片黏貼製程技術所製造的電子產品無法通過高標準ISO/TS16949的技術範疇。 Continuing from the above, ISO / TS16949 technology regulates the use of automobiles because they are used in many environments, including extreme climates such as extreme heat, freezing, dryness and humidity, and extreme climate change. All parts must be of a higher standard than those used in general products to withstand harsh environmental changes, including the technical specifications for the adhesion of heat sinks in electronic parts, resulting in electronics manufactured by general semiconductor heat sink adhesion process technology. The product cannot pass the technical scope of high standard ISO / TS16949.

因此,如何提升散熱片與半導體之間的黏著力與拉拔力,以符合高標準技術規範,使黏貼於電子產品上的散熱片可以對抗嚴苛的環境變化與外力的拉拔而不易自半導體晶片上剝落,便成為相關業者亟需努力之目標。 Therefore, how to improve the adhesion and drawing force between the heat sink and the semiconductor in order to meet the high standard technical specifications, so that the heat sink attached to the electronic product can withstand the harsh environmental changes and the external force and is not easy to pull from the semiconductor. Peeling off the wafer has become an urgent need for related industry players.

有鑑於此,本發明之目的是提供一種具有增加拉拔力之散熱片裝置,適用於使用一黏著劑黏貼於一基板上,並包含一第一主體單元,及一複數第一拉拔單元。該第一主體單元包括一具有一第一上表面及一第一下表面之第一主體。 In view of this, an object of the present invention is to provide a heat sink device with increased drawing force, which is suitable for being adhered to a substrate using an adhesive, and includes a first main body unit and a plurality of first drawing units. The first body unit includes a first body having a first upper surface and a first lower surface.

該複數第一拉拔單元分散的設置於該第一主體中,每一第一拉拔單元包括一貫穿該第一主體的第一通孔、一設置於該第一上表面之第一上開口、一設置於該第一下表面之第一下開口,及一連接該第一上開口與該第一下開口之第一環繞壁,且該第一上開口的開口面積大於該第一下開口,當該第一主體之第一下表面黏貼於該基板時,該黏著劑可由該第一下開口進入該第一通孔後凝固,並與該第一環繞壁形成一拉拔力,以使該第一主體單元不易自該基板脫落。 The plurality of first drawing units are dispersedly disposed in the first body. Each first drawing unit includes a first through hole penetrating the first body, and a first upper opening provided on the first upper surface. A first lower opening provided on the first lower surface, and a first surrounding wall connecting the first upper opening and the first lower opening, and an opening area of the first upper opening is larger than the first lower opening When the first lower surface of the first body is adhered to the substrate, the adhesive can enter the first through hole through the first lower opening to solidify, and form a pulling force with the first surrounding wall, so that The first main body unit is not easily detached from the substrate.

本發明的又一技術手段,是在於上述之第一環繞壁的周緣是由該第一下開口向該第一上開口漸大。 Another technical means of the present invention is that the peripheral edge of the first surrounding wall is gradually enlarged from the first lower opening to the first upper opening.

本發明的另一技術手段,是在於上述之每一第一拉拔單元更包括一設置於該第一環繞壁上之粗糙面。 Another technical means of the present invention is that each of the first drawing units further includes a rough surface disposed on the first surrounding wall.

本發明之再一技術手段,是在於上述之第一通孔具有一連接該第一上開口之大孔徑部、一連接該第一下開口之小孔徑部,及一介於該大孔徑部與該小孔徑部間 的肩部。 Another technical means of the present invention is that the above-mentioned first through hole has a large-aperture portion connected to the first upper opening, a small-aperture portion connected to the first lower opening, and an intervening portion between the large-aperture portion and the Small aperture Shoulders.

本發明的又一技術手段,是在於上述之第一通孔更具有一自該肩部往該第一通孔中心線凸伸之防拉凸垣。 Another technical means of the present invention is that the above-mentioned first through-hole further has a pull-proof protrusion extending from the shoulder to the center line of the first through-hole.

本發明的另一技術手段,是在於上述之第一主體單元更包括一設置於該第一主體中並貫穿該第一上表面與該第一下表面之大開放孔。 Another technical means of the present invention is that the above-mentioned first main body unit further includes a large opening hole disposed in the first main body and penetrating the first upper surface and the first lower surface.

本發明的再一技術手段,是在於上述之第一主體之第一下表面形成一容置槽,而該複數第一拉拔單元是圍繞該容置槽設置。 Another technical means of the present invention is that an accommodating groove is formed on the first lower surface of the first body, and the plurality of first drawing units are disposed around the accommodating groove.

本發明的又一技術手段,是在於上述之具有增加拉拔力之散熱片裝置更包含一第二主體單元,包括間隔一設置於該第一主體上方並具有一第二上表面及一第二下表面的第二主體,以及一連接該第二下表面與該第一上表面之連接層,且該第一主體及該第二主體之外周緣切齊。 Another technical means of the present invention is that the above-mentioned heat sink device with increased pulling force further includes a second body unit, which includes an interval disposed above the first body and having a second upper surface and a second A second body on the lower surface and a connecting layer connecting the second lower surface and the first upper surface, and the outer periphery of the first body and the second body are aligned with each other.

本發明的另一技術手段,是在於上述之具有增加拉拔力之散熱片裝置更包含複數第二拉拔單元,其分散的設置於該第二主體中,每一第二拉拔單元包括一貫穿該第二主體的第二通孔、一設置於該第二上表面之第二上開口、一設置於該第二下表面之第二下開口,及一連接該第二上開口及該第二下開口之第二環繞壁,該第二上開口的開口面積大於該第二下開口。 Another technical means of the present invention is that the above-mentioned heat sink device with increased drawing force further includes a plurality of second drawing units, which are dispersedly disposed in the second body, and each second drawing unit includes a A second through hole penetrating through the second body, a second upper opening provided on the second upper surface, a second lower opening provided on the second lower surface, and a connection between the second upper opening and the first The second surrounding wall of the two lower openings has an opening area larger than that of the second lower opening.

本發明的再一技術手段,是在於上述之具有增加拉拔力之散熱片裝置更包含一第三主體單元,包括一間隔設置於該第一主體上方之第三主體,及一自該第三主體周緣往該基板方向延伸並與該第一主體連接的連接段,該第三主體之外周緣不大於該大開放孔。 Still another technical means of the present invention is that the above-mentioned heat sink device with increased pulling force further includes a third body unit, including a third body spaced above the first body, and a third body from the third body. The peripheral edge of the main body extends toward the substrate and is connected to the first main body. The outer peripheral edge of the third main body is not larger than the large opening.

本發明之有益功效在於具有散熱功效之第一主體中設置了複數第一拉拔單元,當在進行半導體散熱片黏貼製程時,該黏著劑不僅可將該第一主體與該基板黏 貼在一起,該黏著劑還會經由該第一下開口進入該第一通孔中與該第一環繞壁黏貼在一起,可以增加該第一主體及該基板之間的黏著力,並且,每一第一拉拔單元之第一上開口的面積大於第一下開口,使的凝固於該第一通孔中的黏著劑與該第一環繞壁相互產生拉拔力,能讓設置有該複數第一拉拔單元之第一主體能緊緊的黏貼於該基板上而不易掉落,用以對抗外界嚴苛的環境變化及拉拔的力量。 A beneficial effect of the present invention is that a plurality of first drawing units are provided in a first body having a heat dissipation effect. When the semiconductor heat sink is adhered, the adhesive not only can adhere the first body to the substrate. If they are stuck together, the adhesive will also enter the first through hole through the first lower opening and stick together with the first surrounding wall, which can increase the adhesion between the first body and the substrate. The area of the first upper opening of a first drawing unit is larger than that of the first lower opening, so that the adhesive solidified in the first through hole and the first surrounding wall generate a pulling force with each other, so that the plural number can be provided. The first body of the first drawing unit can be tightly adhered to the substrate without falling easily, and is used to resist the harsh external environment changes and the drawing force.

A‧‧‧黏著劑 A‧‧‧Adhesive

B‧‧‧基板 B‧‧‧ substrate

3‧‧‧第一主體單元 3‧‧‧first main unit

31‧‧‧第一主體 31‧‧‧first subject

311‧‧‧第一上表面 311‧‧‧first upper surface

312‧‧‧第一下表面 312‧‧‧First lower surface

313‧‧‧容置槽 313‧‧‧Receiving slot

32‧‧‧大開放孔 32‧‧‧Large open hole

4‧‧‧第一拉拔單元 4‧‧‧The first drawing unit

41‧‧‧第一通孔 41‧‧‧First through hole

410‧‧‧中心線 410‧‧‧ Centerline

411‧‧‧大孔徑部 411‧‧‧Large aperture section

412‧‧‧小孔徑部 412‧‧‧Small Aperture

413‧‧‧肩部 413‧‧‧Shoulder

414‧‧‧防拉凸垣 414‧‧‧Anti-pulling convex

42‧‧‧第一上開口 42‧‧‧First upper opening

43‧‧‧第一下開口 43‧‧‧First lower opening

44‧‧‧第一環繞壁 44‧‧‧ the first surrounding wall

45‧‧‧粗糙面 45‧‧‧ rough surface

5‧‧‧第二主體單元 5‧‧‧Second main unit

51‧‧‧第二主體 51‧‧‧Second Subject

511‧‧‧第二上表面 511‧‧‧second upper surface

512‧‧‧第二下表面 512‧‧‧Second lower surface

52‧‧‧連接層 52‧‧‧ Connection Layer

6‧‧‧第二拉拔單元 6‧‧‧second drawing unit

61‧‧‧第二通孔 61‧‧‧Second through hole

62‧‧‧第二上開口 62‧‧‧Second upper opening

63‧‧‧第二下開口 63‧‧‧ Second lower opening

64‧‧‧第二環繞壁 64‧‧‧Second Surrounding Wall

7‧‧‧第三主體單元 7‧‧‧ third main unit

71‧‧‧第三主體 71‧‧‧ third subject

72‧‧‧連接段 72‧‧‧ connecting section

圖1是一示意圖,說明現有的散熱片黏貼於一基板之態樣;圖2是一裝置示意圖,說明本發明具有增加拉拔力之散熱片裝置的一第一較佳實施例;圖3是一局部剖視圖,說明該第一較佳實施例之一第一拉拔單元;圖4是一裝置示意圖,說明本發明具有增加拉拔力之散熱片裝置的一第二較佳實施例;圖5是一剖視示意圖,說明該第二較佳實施例之第一拉拔單元;圖6是一裝置示意圖,說明本發明具有增加拉拔力之散熱片裝置的一第三較佳實施例;圖7是一示意圖,說明該第三較佳實施例的實施態樣;圖8是一局部剖視圖,說明本發明具有增加拉拔力之散熱片裝置的一第四較佳實施例;圖9是一示意圖,說明該第四較佳實施例的實施態樣;圖10是一裝置示意圖,說明本發明具有增加拉拔力之散熱片裝置的一第五較佳實施例;圖11是一局部剖視圖,說明該第五較佳實施例之第一拉拔單元;及圖12是一示意圖,說明該第五較佳實施例的實施態 樣。 FIG. 1 is a schematic diagram illustrating a state in which a conventional heat sink is adhered to a substrate; FIG. 2 is a schematic diagram of a device illustrating a first preferred embodiment of the heat sink device having increased drawing force according to the present invention; FIG. 3 is A partial cross-sectional view illustrating a first drawing unit of one of the first preferred embodiments; FIG. 4 is a schematic diagram of a device illustrating a second preferred embodiment of a heat sink device having an increased drawing force according to the present invention; FIG. 5 It is a schematic cross-sectional view illustrating the first drawing unit of the second preferred embodiment; FIG. 6 is a schematic diagram of the device, illustrating a third preferred embodiment of the heat sink device with increased drawing force of the present invention; 7 is a schematic diagram illustrating the implementation of the third preferred embodiment; FIG. 8 is a partial cross-sectional view illustrating a fourth preferred embodiment of the heat sink device having an increased drawing force according to the present invention; FIG. 9 is a A schematic diagram illustrating the implementation of the fourth preferred embodiment; FIG. 10 is a schematic diagram of a device illustrating a fifth preferred embodiment of the heat sink device with increased drawing force according to the present invention; FIG. 11 is a partial cross-sectional view, Describe the fifth preferred implementation Example 1 of the first drawing unit; and FIG. 12 is a schematic diagram illustrating the implementation of the fifth preferred embodiment kind.

有關於本發明之相關申請專利特色與技術內容,在以下配合參考圖式之五個較佳實施例的詳細說明中,將可清楚的呈現。 The features and technical contents of the related patent applications of the present invention will be clearly presented in the following detailed description of the five preferred embodiments with reference to the drawings.

在進行詳細說明前應注意的是,類似的元件是以相同的編號來作表示。並且,說明書內容所提及半導體封裝製程可用於覆晶封裝(Flip Chip Package,FC)、銲球陣列封裝(Plastic Ball Grid Array Package,PBGA)、球閘陣列封裝(Ball Grid Array,BGA)、四方扁平封裝(Quad Flat Package,QFP)、四方扁平無引腳封裝(Quad Flat No-lead Package,QFN),及晶片級封裝(Chip Scale Package,CSP)等多種半導體封裝技術。 It should be noted before detailed description that similar elements are represented by the same number. In addition, the semiconductor packaging process mentioned in the description can be used in Flip Chip Package (FC), Plastic Ball Grid Array Package (PBGA), Ball Grid Array (BGA), Sifang Various semiconductor packaging technologies such as Quad Flat Package (QFP), Quad Flat No-lead Package (QFN), and Chip Scale Package (CSP).

參閱圖2、3,為本發明具有增加拉拔力之散熱片裝置的第一較佳實施例,適用於使用一黏著劑A黏貼於一基板B上,並可將該基板B上方的晶片所產生的熱量傳導至外界,其圖中切線a-a為該第一較佳實施例之剖面線。該散熱片裝置包含一第一主體單元3,及複數第一拉拔單元4。該第一主體單元3包括一具有一第一上表面311及一第一下表面312之第一主體31。 Referring to Figs. 2 and 3, a first preferred embodiment of a heat sink device with an increased pullout force according to the present invention is suitable for using an adhesive A to adhere to a substrate B, and the wafer above the substrate B can be used. The generated heat is conducted to the outside, and the tangent line aa in the figure is the section line of the first preferred embodiment. The heat sink device includes a first body unit 3 and a plurality of first drawing units 4. The first main body unit 3 includes a first main body 31 having a first upper surface 311 and a first lower surface 312.

該複數第一拉拔單元4分散的設置於該第一主體31中,每一第一拉拔單元4包括一貫穿該第一主體31的第一通孔41、一設置於該第一上表面311之第一上開口42、一設置於該第一下表面312之第一下開口43,及一連接該第一上開口42及該第一下開口43之第一環繞壁44,且該第一上開口42的開口面積大於該第一下開口43,且該第一環繞壁44的周緣是由該第一下開口43向該第一上開口42漸大。 The plurality of first drawing units 4 are dispersedly disposed in the first body 31. Each first drawing unit 4 includes a first through hole 41 penetrating the first body 31, and one is disposed on the first upper surface. A first upper opening 42 of 311, a first lower opening 43 provided on the first lower surface 312, and a first surrounding wall 44 connecting the first upper opening 42 and the first lower opening 43, and the first An opening area of an upper opening 42 is larger than the first lower opening 43, and a peripheral edge of the first surrounding wall 44 is gradually increased from the first lower opening 43 to the first upper opening 42.

在該第一較佳實施例中,該複數第一拉拔單元4是以兩兩相對之排列方式沿著該第一主體31的周緣內 側框圍成一圈,以使該第一主體31黏貼於該基板B上時,該第一主體31之第一下表面312可與該晶片的上表面黏貼在一起,以使該晶片所產生的熱量傳導至外界,實際實施時,該複數第一拉拔單元4可依照實際狀況來設置,不應以此為限。 In the first preferred embodiment, the plurality of first drawing units 4 are arranged in pairs opposite to each other along the periphery of the first body 31. The side frame is enclosed in a circle, so that when the first body 31 is adhered to the substrate B, the first lower surface 312 of the first body 31 can be adhered to the upper surface of the wafer so that the wafer can generate The heat is conducted to the outside. In actual implementation, the plurality of first drawing units 4 can be set according to actual conditions, and should not be limited to this.

續上所述,當該第一主體31之第一下表面312黏貼於該基板B時,該黏著劑A可經由該第一下開口43進入該第一通孔41後凝固,並與該第一環繞壁44形成一拉拔力,以使該第一主體單元3不易自該基板B上脫落。 Continuing from the above description, when the first lower surface 312 of the first body 31 is adhered to the substrate B, the adhesive A can enter the first through hole 41 through the first lower opening 43 and solidify, and then bond with the first A surrounding wall 44 forms a pulling force, so that the first main body unit 3 cannot be easily separated from the substrate B.

值得一提的是,與該第一環繞壁44黏貼在一起的黏著劑A不僅可以增加與該第一主體31的黏著面積來提升黏著力,再加上該第一通孔41之周緣是由該第一下開口43向該第一上開口42漸大的特點,使凝固於該第一通孔41中之黏著劑A與該第一環繞壁44形成一拉拔力,使凝固的黏著劑A不易自該第一下開口43中脫落,比起傳統的散熱片單使用一平面與該基板B的黏貼方式,本發明確實可達到提升黏著力及增加拉拔力的功效。 It is worth mentioning that the adhesive A adhered to the first surrounding wall 44 can not only increase the adhesion area with the first body 31 to improve adhesion, but also the periphery of the first through hole 41 is caused by The characteristic that the first lower opening 43 gradually increases toward the first upper opening 42 causes the adhesive A solidified in the first through hole 41 and the first surrounding wall 44 to form a pulling force to make the solidified adhesive A is not easy to fall off from the first lower opening 43. Compared with the traditional method of sticking a flat surface to the substrate B with the conventional heat sink, the present invention can indeed achieve the effects of improving the adhesion and increasing the drawing force.

參閱圖4、5,為本發明具有增加拉拔力之散熱片裝置的第二較佳實施例,該第二較佳實施例與該第一較佳實施例大致相同,相同之處於此不再贅述,不同之處在於該第一主體單元3更包括一設置於該第一主體31中並貫穿該第一上表面311與該第一下表面312之大開放孔32,且每一第一拉拔單元4更包括一設置於該第一環繞壁44上之粗糙面45。 Referring to FIGS. 4 and 5, a second preferred embodiment of a heat sink device with increased drawing force according to the present invention is substantially the same as the first preferred embodiment. To repeat, the difference is that the first body unit 3 further includes a large opening 32 provided in the first body 31 and penetrating the first upper surface 311 and the first lower surface 312, and each first pull The drawing unit 4 further includes a rough surface 45 disposed on the first surrounding wall 44.

在該第二較佳實施例中,該複數第一拉拔單元4是以分散的方式設置於該第一主體31中,當該第一主體單元3黏貼於該基板B上時,該大開放孔32可容置該基板B上方的晶片。此外,該第二較佳實施例之第一拉拔單元4不僅可以保留相同於該第一較佳實施例的黏貼效果,設置於該第一環繞壁44上的粗糙面45還可以再增加 該黏著劑A與該第一主體31的黏貼面積,用以將該第一主體31與該基板B中的黏著力及拉拔力更向上進一步的提升。 In the second preferred embodiment, the plurality of first drawing units 4 are disposed in the first main body 31 in a distributed manner. When the first main body unit 3 is adhered to the substrate B, the opening is wide. The hole 32 can receive a wafer above the substrate B. In addition, the first drawing unit 4 of the second preferred embodiment can not only retain the same adhesive effect as that of the first preferred embodiment, but also the rough surface 45 provided on the first surrounding wall 44 can be further increased. The adhesion area between the adhesive A and the first body 31 is used to further improve the adhesion and the pulling force between the first body 31 and the substrate B.

參閱圖6、7,為本發明具有增加拉拔力之散熱片裝置的第三較佳實施例,其圖中切線b-b為該第三較佳實施例之剖面線,該第三較佳實施例與該第一較佳實施例大致相同,相同之處於此不再贅述,不同之處在於該第一主體31之第一下表面312形成一容置槽313,使該第一主體31之剖面形狀形成ㄇ型,而該複數第一拉拔單元4是圍繞該容置槽313所設置,較佳地,該複數第一拉拔單元4是以單一排列的方式框圍於該第一主體31中,實際實施時,該複數第一拉拔單元4可依照實際狀況來設置,不應以此為限。 Referring to FIGS. 6 and 7, a third preferred embodiment of a heat sink device with increased drawing force according to the present invention is shown. A tangent line bb in the figure is a section line of the third preferred embodiment. The third preferred embodiment It is substantially the same as the first preferred embodiment, and the same is not repeated here. The difference is that a receiving groove 313 is formed on the first lower surface 312 of the first body 31, so that the cross-sectional shape of the first body 31 It is formed in a ㄇ shape, and the plurality of first drawing units 4 are arranged around the accommodation groove 313. Preferably, the plurality of first drawing units 4 are framed in the first body 31 in a single arrangement. In practice, the plurality of first drawing units 4 can be set according to actual conditions, and should not be limited to this.

當該第三較佳實施例黏貼於該基板B上時,該黏著劑A將該容置槽313外側之第一下表面312與該基板B之上表面黏貼在一起時,該黏著劑A會經由該第一下開口43進入該第一通孔41後凝固,並與該第一環繞壁44相互產生黏著力及拉拔力,以使該第一主體單元3不易自該基板B上脫落,且該基板B上方的晶片是容置於該容置槽313中,該晶片之上表面與該容置槽313中的第一下表面312黏貼在一起,用以將該晶片所產生的熱量傳導至外界。 When the third preferred embodiment is adhered to the substrate B, when the adhesive A adheres the first lower surface 312 outside the accommodation groove 313 to the upper surface of the substrate B, the adhesive A will It enters the first through hole 41 through the first lower opening 43 and solidifies, and generates an adhesive force and a pulling force with the first surrounding wall 44 to prevent the first body unit 3 from falling off the substrate B easily. And the wafer above the substrate B is accommodated in the accommodation groove 313, and the upper surface of the wafer is adhered to the first lower surface 312 in the accommodation groove 313 to conduct the heat generated by the wafer. To the outside world.

參閱圖8、9,為本發明具有增加拉拔力之散熱片裝置的第四較佳實施例,該第四較佳實施例與該第二較佳實施例大致相同,相同之處於此不再贅述,不同之處在於該散熱片裝置更包含一第二主體單元5,及複數第二拉拔單元6。 Referring to FIGS. 8 and 9, there is shown a fourth preferred embodiment of a heat sink device with increased drawing force according to the present invention. The fourth preferred embodiment is substantially the same as the second preferred embodiment. To repeat, the difference is that the heat sink device further includes a second body unit 5 and a plurality of second drawing units 6.

該第二主體單元5包括一間隔設置於該第一主體31上方並具有一第二上表面511及一第二下表面512的第二主體51,以及一連接該第二下表面512與該第一上 表面311之連接層52,且該第一主體31及該第二主體51之外周緣切齊,較佳地,該連接層52之材質及特性與該黏著劑A相同。 The second main body unit 5 includes a second main body 51 spaced above the first main body 31 and having a second upper surface 511 and a second lower surface 512, and a second lower surface 512 connected to the first lower surface 512. One up The connection layer 52 on the surface 311 is aligned with the outer periphery of the first body 31 and the second body 51. Preferably, the material and characteristics of the connection layer 52 are the same as those of the adhesive A.

複數第二拉拔單元6分散的設置於該第二主體51中,每一第二拉拔單元6包括一貫穿該第二主體51的第二通孔61、一設置於該第二上表面511之第二上開口62、一設置於該第二下表面512之第二下開口63,及一連接該第二上開口62及該第二下開口63之第二環繞壁64,該第二上開口62的開口面積大於該第二下開口63,且該第二環繞壁64的周緣是由該第二下開口63向該第二上開口62漸大。 A plurality of second drawing units 6 are dispersedly disposed in the second body 51. Each second drawing unit 6 includes a second through hole 61 penetrating through the second body 51, and one is disposed on the second upper surface 511. A second upper opening 62, a second lower opening 63 provided on the second lower surface 512, and a second surrounding wall 64 connecting the second upper opening 62 and the second lower opening 63, the second upper opening The opening area of the opening 62 is larger than the second lower opening 63, and the peripheral edge of the second surrounding wall 64 is gradually increased from the second lower opening 63 to the second upper opening 62.

當該四較佳實施例黏貼於該基板B上時,該第一主體單元3之大開放孔32可容置該基板B上方的晶片,而凝固於該第一通孔41中的黏著劑A不僅可以增加與該第一主體31的黏貼面積來增加黏著力,再加上該第一環繞壁44的周緣是由該第一下開口43向該第一上開口42漸大的特點,使凝固於該第一通孔41中之黏著劑A產生拉拔力而不易由該第一下開口43中脫落。 When the four preferred embodiments are adhered to the substrate B, the large opening hole 32 of the first main body unit 3 can receive the wafer above the substrate B, and the adhesive agent A solidified in the first through hole 41 is solidified. Not only the adhesion area with the first body 31 can be increased to increase the adhesive force, but also the peripheral edge of the first surrounding wall 44 is gradually enlarged from the first lower opening 43 to the first upper opening 42 to solidify. The adhesive A in the first through hole 41 generates a pulling force and is not easily detached from the first lower opening 43.

此外,該複數第二拉拔單元6也具有與該第一拉拔單元4相同的功效,當該第二主體51藉由該連接層52與該第一主體31黏貼在一起時,該連接層52之材質可經由該第二下開口63進入該第二通孔61中凝固,並與該第二環繞壁64形成黏著力及拉拔力,在加上該連接層52之材質可與該第一通孔41中之黏著劑A接觸並互相黏貼在一起,以使該第二主體單元5緊緊的與該第一主體單元3黏貼在一起而不易脫落。 In addition, the plurality of second drawing units 6 also have the same effect as the first drawing unit 4. When the second body 51 is adhered to the first body 31 through the connection layer 52, the connection layer The material of 52 can be solidified into the second through-hole 61 through the second lower opening 63, and form an adhesive force and a drawing force with the second surrounding wall 64. The material of the connection layer 52 can be connected with the first Adhesives A in a through hole 41 contact and adhere to each other, so that the second body unit 5 is tightly adhered to the first body unit 3 and is not easy to fall off.

在該第四較佳實施例中,該複數第一、二拉拔單元4、6分別以兩兩相對之排列方式沿著該第一、二主體31、51的周緣內側框圍成一圈,實際實施時,該複數第一、二拉拔單元4、6可依照實際狀況來設置,不應以此為 限。當該第一、二主體31、51黏貼於該基板B上時,該第二主體51之第二下表面512可與該晶片的上表面黏貼在一起,以使該晶片所產生的熱量傳導至外界。 In the fourth preferred embodiment, the plurality of first and second drawing units 4, 6 are arranged in a pair of opposite directions, respectively, and form a circle along the inner frame of the periphery of the first and second bodies 31, 51. In actual implementation, the plurality of first and second drawing units 4, 6 can be set according to actual conditions, and should not be used as such. limit. When the first and second bodies 31 and 51 are adhered to the substrate B, the second lower surface 512 of the second body 51 may be adhered to the upper surface of the wafer so that the heat generated by the wafer is transmitted to external.

參閱圖10、11、12,為本發明具有增加拉拔力之散熱片裝置的第五較佳實施例,其圖中切線c-c為該第三較佳實施例之剖面線,該第五較佳實施例與該第二較佳實施例大致相同,相同之處於此不再贅述,不同之處在於該散熱片裝置更包含一第三主體單元7。 Referring to Figs. 10, 11, and 12, a fifth preferred embodiment of a heat sink device having an increased pullout force according to the present invention is shown. A tangent line cc in the figure is a section line of the third preferred embodiment. The embodiment is substantially the same as the second preferred embodiment, and the same is not repeated here. The difference is that the heat sink device further includes a third body unit 7.

該第三主體單元7包括一間隔設置於該第一主體31上方之第三主體71,及一自該第三主體71周緣往該基板B方向延伸並與該第一主體31連接的連接段72,該第三主體71之外周緣不大於該大開放孔32,較佳地,該第一主體單元3與該第三主體單元7使用金屬材質所製做且兩者一體成型,當該第一主體31黏貼於該基板B時,該第三主體71之下表面與該晶片之上表面黏貼在一起,以使該晶片所產生的熱量可藉由該第三主體71傳導至外界。 The third main body unit 7 includes a third main body 71 spaced above the first main body 31 and a connecting section 72 extending from the periphery of the third main body 71 in the direction of the substrate B and connected to the first main body 31. The outer periphery of the third main body 71 is not larger than the large opening hole 32. Preferably, the first main body unit 3 and the third main body unit 7 are made of metal materials and are integrally formed. When the main body 31 is adhered to the substrate B, the lower surface of the third body 71 and the upper surface of the wafer are adhered together, so that the heat generated by the wafer can be conducted to the outside through the third body 71.

該第一通孔41具有一連接該第一上開口42之大孔徑部411、一連接該第一下開口43之小孔徑部412、一介於該大孔徑部411與該小孔徑部412間的肩部413,及一自該肩部413往該第一通孔41中心線410凸伸之防拉凸垣414。 The first through-hole 41 has a large-aperture portion 411 connected to the first upper opening 42, a small-aperture portion 412 connected to the first lower opening 43, and a portion between the large-aperture portion 411 and the small-aperture portion 412. The shoulder portion 413 and a pull-proof protrusion 414 protruding from the shoulder portion 413 toward the center line 410 of the first through hole 41.

在此發明人要敘明的是,當該第一主體31之第一下表面312黏貼於該基板B上時,該黏著劑A可由該第一下開口43進入該第一通孔41中,不僅可與該第一環繞壁44互相黏貼形成黏著力,還能藉由該大孔徑部411、該小孔徑部412及該肩部413的設置,使凝固於該第一通孔41中的黏著劑A能與該肩部413產生拉拔力,再配合該黏著劑A可以環繞住該防拉凸垣414凝固的黏貼起來,能使該黏著劑A與該第一主體單元3產生最大的黏著力及拉拔力,將該散熱片裝置與該基板B可以緊緊的黏貼 在一起,不但能對抗外界嚴苛的環境變化而不會脫落,還能對抗外界拉拔的力量而不會分離。 What the inventors want to state is that when the first lower surface 312 of the first body 31 is adhered to the substrate B, the adhesive A can enter the first through hole 41 through the first lower opening 43. Not only can the first surrounding wall 44 be adhered to each other to form an adhesive force, but also the setting of the large-aperture portion 411, the small-aperture portion 412, and the shoulder portion 413 can solidify the adhesion in the first through-hole 41 The agent A can generate a pulling force with the shoulder 413, and then cooperate with the adhesive A to surround and solidify the anti-pulling convex 414, so that the adhesive A and the first main body unit 3 can produce maximum adhesion. Force and pulling force, the heat sink device and the substrate B can be closely adhered Together, they can not only resist the harsh environmental changes of the outside world without falling off, but also resist the pulling force of the outside world without separation.

由上述說明可知,本發明具有增加拉拔力之散熱片裝置確實包含以下優點: It can be known from the above description that the heat sink device with increased pulling force of the present invention does include the following advantages:

一、提升黏著力 First, improve adhesion

本發明於半導體散熱片黏貼製程中,該黏著劑A不僅可以將該第一下表面312與該基板B之上表面黏貼在一起,還可以經由該複數第一拉拔單元4之第一下開口43進入該第一通孔41中與該第一環繞壁44黏貼在一起,用以增加黏著面積來提升該第一主體31與該基板B彼此間的黏著力。 In the semiconductor heat sink bonding process of the present invention, the adhesive A can not only adhere the first lower surface 312 to the upper surface of the substrate B, but also pass through the first lower openings of the plurality of first drawing units 4. 43 enters the first through hole 41 and is adhered to the first surrounding wall 44 to increase the adhesion area to improve the adhesion between the first body 31 and the substrate B.

二、增加拉拔力 Second, increase the pulling force

本發明藉由每一第一拉拔單元4之第一上開口42的周緣大於該第一下開口43的特點,當該黏著劑A經由該第一下開口43進入該第一通孔41中凝固時,凝固的黏著劑A會與該第一環繞壁44或是該肩部413相互抵固而增加拉拔力,使該第一主體31能對抗外界的拉拔而不會分離。 According to the present invention, the peripheral edge of the first upper opening 42 of each first drawing unit 4 is larger than the first lower opening 43. When the adhesive A enters the first through hole 41 through the first lower opening 43. During solidification, the solidified adhesive A and the first surrounding wall 44 or the shoulder 413 resist each other to increase the pulling force, so that the first body 31 can resist the pulling of the outside without separation.

三、符合高規格的產品規範 Third, meet high product specifications

承上所述,設置有該複數第一拉拔單元4之第一主體單元3確實可提升與該基板B間的黏著力及拉拔力,使本發明可以對抗外界嚴苛的環境變化及拉拔力道,緊緊的黏貼於該基板B上不易脫落,可以符合高規格的產品規範。 As mentioned above, the first main body unit 3 provided with the plurality of first drawing units 4 can indeed improve the adhesion and drawing force with the substrate B, so that the present invention can resist the harsh external environment changes and drawing Pulling force, sticking tightly to the substrate B is not easy to fall off, and can meet high product specifications.

綜上所述,本發明具有增加拉拔力之散熱片裝置的第一主體31中設置該複數第一拉拔單元4,當該第一主體31與該基板B黏貼在一起時,該黏著劑A不僅可 將該第一下表面312與該基板B之上表面黏貼在一起,還會經由該第一下開口43進入該第一通孔41中與該第一環繞壁44黏貼在一起以增加貼黏面積來提升黏著力,再藉由每一第一拉拔單元4之第一下開口43的面積小於第一上開口42的特點,使凝固於該第一通孔41中之黏著劑A能與該第一環繞壁44相互抵固並產生拉拔力,讓該散熱片裝置能與該基板B緊緊的黏貼在一起,不但可抵抗外界嚴苛的環境變化而不會脫落,還能對抗外界拉拔的力量而不會分離,使本發明可以合乎高規格產品的技術範疇,故確實能夠達到本發明之目的。 In summary, the plurality of first drawing units 4 are provided in the first body 31 of the heat sink device with increased drawing force according to the present invention. When the first body 31 and the substrate B are adhered together, the adhesive A not only The first lower surface 312 and the upper surface of the substrate B are adhered together, and the first lower opening 43 is also entered into the first through hole 41 and adhered to the first surrounding wall 44 to increase the adhered area. To improve the adhesive force, and then the area of the first lower opening 43 of each first drawing unit 4 is smaller than the first upper opening 42 so that the adhesive A solidified in the first through-hole 41 can interact with the The first surrounding wall 44 resists each other and generates a pulling force, so that the heat sink device can be tightly adhered to the substrate B, which can not only resist the harsh external environment changes without falling off, but also resist external pulling. The pulling force without separation makes the present invention meet the technical scope of high-standard products, so it can indeed achieve the purpose of the present invention.

惟以上所述者,僅為本發明之五個較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。 However, the above are only the five preferred embodiments of the present invention. When the scope of implementation of the present invention cannot be limited by this, that is, the simple equivalent changes made according to the scope of the patent application and the description of the invention, and Modifications are still within the scope of the invention patent.

Claims (8)

一種具有增加拉拔力之散熱片裝置,適用於使用一黏著劑黏貼於一基板上,並包含:一第一主體單元,包括一具有一第一上表面及一第一下表面之第一主體;及複數第一拉拔單元,其分散的設置於該第一主體中,每一第一拉拔單元包括一貫穿該第一主體的第一通孔、一設置於該第一上表面之第一上開口、一設置於該第一下表面之第一下開口,及一連接該第一上開口與該第一下開口之第一環繞壁,該第一上開口的開口面積大於該第一下開口,當該第一主體之第一下表面黏貼於該基板時,該黏著劑可由該第一下開口進入該第一通孔後凝固,並與該第一環繞壁形成一拉拔力,以使該第一主體單元不易自該基板脫落,該第一通孔具有一連接該第一上開口之大孔徑部、一連接該第一下開口之小孔徑部、一環設於該大孔徑部與該小孔徑部間的肩部,及一自該肩部往該第一通孔中心線環繞凸伸之防拉凸垣。A heat sink device with increased drawing force is suitable for being adhered to a substrate using an adhesive and includes: a first body unit including a first body having a first upper surface and a first lower surface ; And a plurality of first drawing units, which are dispersedly disposed in the first body, each first drawing unit includes a first through hole penetrating through the first body, and a first hole provided on the first upper surface. An upper opening, a first lower opening disposed on the first lower surface, and a first surrounding wall connecting the first upper opening and the first lower opening, the opening area of the first upper opening is larger than the first opening A lower opening, when the first lower surface of the first body is stuck to the substrate, the adhesive can enter the first through hole through the first lower opening to solidify, and form a pulling force with the first surrounding wall, In order to prevent the first body unit from falling off the substrate, the first through hole has a large aperture portion connected to the first upper opening, a small aperture portion connected to the first lower opening, and a ring provided on the large aperture portion. The shoulder between the small aperture and the shoulder To the first through hole surrounding the protruding center line of pull-convex wall. 依據申請專利範圍第1項所述具有增加拉拔力之散熱片裝置,其中,該第一環繞壁的周緣是由該第一下開口向該第一上開口漸大。According to the heat sink device with increased pulling force according to item 1 of the scope of the patent application, wherein the peripheral edge of the first surrounding wall gradually increases from the first lower opening to the first upper opening. 依據申請專利範圍第1項所述具有增加拉拔力之散熱片裝置,其中,每一第一拉拔單元更包括一設置於該第一環繞壁上之粗糙面。According to item 1 of the scope of the patent application, the heat sink device with increased drawing force, wherein each first drawing unit further includes a rough surface disposed on the first surrounding wall. 依據申請專利範圍第1項所述具有增加拉拔力之散熱片裝置,其中,該第一主體單元更包括一設置於該第一主體中並貫穿該第一上表面與該第一下表面之大開放孔。According to item 1 of the scope of the patent application, the heat sink device with increased drawing force, wherein the first body unit further includes a first body unit disposed in the first body and penetrating the first upper surface and the first lower surface. Large open hole. 依據申請專利範圍第1項所述具有增加拉拔力之散熱片裝置,其中,該第一主體之第一下表面形成一容置槽,而該複數第一拉拔單元是圍繞該容置槽設置。According to item 1 of the scope of patent application, the heat sink device with increased drawing force, wherein a receiving groove is formed on the first lower surface of the first body, and the plurality of first drawing units surround the receiving groove. Settings. 依據申請專利範圍第4項所述具有增加拉拔力之散熱片裝置,更包含一第二主體單元,包括間隔一設置於該第一主體上方並具有一第二上表面及一第二下表面的第二主體,以及一連接該第二下表面與該第一上表面之連接層,且該第一主體及該第二主體之外周緣切齊。According to item 4 of the scope of patent application, the heat sink device with increased pulling force further includes a second main body unit, which includes a second upper surface and a second lower surface spaced above the first main body. A second main body and a connecting layer connecting the second lower surface and the first upper surface, and the outer periphery of the first main body and the second main body are aligned. 依據申請專利範圍第6項所述具有增加拉拔力之散熱片裝置,更包含複數第二拉拔單元,其分散的設置於該第二主體中,每一第二拉拔單元包括一貫穿該第二主體的第二通孔、一設置於該第二上表面之第二上開口、一設置於該第二下表面之第二下開口,及一連接該第二上開口及該第二下開口之第二環繞壁,該第二上開口的開口面積大於該第二下開口。According to item 6 of the scope of the patent application, the heat sink device with increased drawing force further includes a plurality of second drawing units, which are dispersedly disposed in the second body, and each second drawing unit includes a through A second through hole of the second body, a second upper opening provided on the second upper surface, a second lower opening provided on the second lower surface, and a second upper opening and the second lower connection The second surrounding wall of the opening has an opening area larger than that of the second lower opening. 依據申請專利範圍第4項所述具有增加拉拔力之散熱片裝置,更包含一第三主體單元,包括一間隔設置於該第一主體上方之第三主體,及一自該第三主體周緣往該基板方向延伸並與該第一主體連接的連接段,該第三主體之外周緣不大於該大開放孔。According to item 4 of the scope of patent application, the heat sink device with increased pulling force further includes a third body unit, including a third body spaced above the first body, and a peripheral edge from the third body. A connecting section extending in the direction of the substrate and connected to the first body, the outer periphery of the third body is not larger than the large opening.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200428623A (en) * 2003-06-11 2004-12-16 Siliconware Precision Industries Co Ltd Semiconductor package with heat sink
TW200509335A (en) * 2003-08-21 2005-03-01 Siliconware Precision Industries Co Ltd Semiconductor package with heat sink
TW200531232A (en) * 2004-03-09 2005-09-16 Siliconware Precision Industries Co Ltd Semiconductor package with heatsink and method for fabricating the same and stiffner

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200428623A (en) * 2003-06-11 2004-12-16 Siliconware Precision Industries Co Ltd Semiconductor package with heat sink
TW200509335A (en) * 2003-08-21 2005-03-01 Siliconware Precision Industries Co Ltd Semiconductor package with heat sink
TW200531232A (en) * 2004-03-09 2005-09-16 Siliconware Precision Industries Co Ltd Semiconductor package with heatsink and method for fabricating the same and stiffner

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