TWI663586B - Display device substrate, manufacturing method of display device substrate, and display device using the same - Google Patents

Display device substrate, manufacturing method of display device substrate, and display device using the same Download PDF

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TWI663586B
TWI663586B TW104140259A TW104140259A TWI663586B TW I663586 B TWI663586 B TW I663586B TW 104140259 A TW104140259 A TW 104140259A TW 104140259 A TW104140259 A TW 104140259A TW I663586 B TWI663586 B TW I663586B
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layer
black
display device
wiring
metal oxide
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TW201631564A (en
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木村幸弘
福吉健藏
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日商凸版印刷股份有限公司
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
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Abstract

實施形態的顯示裝置基板具備:透明基板;及黑色配線,其係在透明基板上,配置於複數個像素間,且包含第1導電性金屬氧化物層、配置於第1導電性金屬氧化物層上的金屬層、配置於金屬層上的第2導電性金屬氧化物層、和配置於第2導電性金屬氧化物層上的黑色層。黑色配線係延伸於第1方向,在與第1方向大致正交的第2方向隔著既定間隔配置有複數條黑色配線;黑色配線包含引繞配線,該引繞配線係延伸至包含複數個像素的顯示區域之外部,且在端部具備第2導電性金屬氧化物層露出的端子部。金屬層係由銅或銅合金形成。黑色層係以碳作為主要的色材。第1及第2導電性金屬氧化物層係由氧化銦和氧化鋅和氧化錫的混合氧化物形成。第1導電性金屬氧化物層、金屬層、第2導電性金屬氧化物層及黑色層係為等線寬。 A display device substrate according to an embodiment includes: a transparent substrate; and a black wiring, which is arranged on a transparent substrate and is disposed between a plurality of pixels, and includes a first conductive metal oxide layer and a first conductive metal oxide layer. An upper metal layer, a second conductive metal oxide layer disposed on the metal layer, and a black layer disposed on the second conductive metal oxide layer. The black wiring system extends in the first direction, and a plurality of black wirings are arranged at predetermined intervals in a second direction that is substantially orthogonal to the first direction. The black wiring includes routing wiring, and the routing wiring system extends to include a plurality of pixels. The display region is provided outside the display region, and a terminal portion having a second conductive metal oxide layer exposed is provided at an end portion. The metal layer is formed of copper or a copper alloy. The black layer uses carbon as the main color material. The first and second conductive metal oxide layers are formed of a mixed oxide of indium oxide, zinc oxide, and tin oxide. The first conductive metal oxide layer, the metal layer, the second conductive metal oxide layer, and the black layer have equal line widths.

Description

顯示裝置基板、顯示裝置基板的製造方法及使用其之顯示裝置 Display device substrate, manufacturing method of display device substrate, and display device using the same

本發明係關於顯示裝置基板、顯示裝置基板的製造方法及使用其之顯示裝置。 The present invention relates to a display device substrate, a method for manufacturing the display device substrate, and a display device using the same.

在智慧型手機或平板電腦等可攜式機器中,一般是將觸控面板貼附於顯示裝置的顯示面側之構成。觸控面板係使用作為手指等指示器的接觸等的輸入手段。觸控面板的指示器的檢測之主流方式,是以其接觸部分的靜電電容變化來進行之方式。 In a portable device such as a smart phone or a tablet computer, a touch panel is generally attached to a display surface side of a display device. The touch panel uses an input means such as contact with a pointer such as a finger. The mainstream detection method of the touch panel pointer is to perform the change in the electrostatic capacitance of the contact portion.

然而,在厚度、重量增加的觀點上,觸控面板是顯示裝置之多餘構件。最近,觸控面板雖被搭載於智慧型手機或平板電腦等可攜式機器,但仍難以避免機器的厚度增加。又,當提高顯示裝置的解析度而設成高畫質像素時,會難以進行觸控面板的輸入。 However, from the viewpoint of increasing the thickness and weight, the touch panel is an unnecessary member of the display device. Recently, although a touch panel is mounted on a portable device such as a smart phone or a tablet computer, it is still difficult to prevent the thickness of the device from increasing. In addition, when the resolution of the display device is increased to provide high-quality pixels, it is difficult to perform input on the touch panel.

例如,當顯示裝置的解析度設成300ppi(pixel per inch)、進一步設成500ppi以上之高畫質像素時,像素間距為8μm以上30μm以下左右而需要微細的輸入(例如筆輸入)。因此,期望實現能夠因應輸入筆的筆壓或筆前端所需要的解析度、又能因應快速的輸入、以及能充分地因應高畫質化之觸控面板。例如,300ppi、進一步 為500ppi以上的高畫質像素之觸控面板的黑色矩陣的線寬,在1μm以上6μm以下左右的細線是理想的。 For example, when the resolution of the display device is set to 300 ppi (pixel per inch) and further to 500 ppi or higher image quality pixels, the pixel pitch is about 8 μm or more and 30 μm or less, which requires fine input (such as pen input). Therefore, it is desired to realize a touch panel that can respond to the pressure required by the input pen or the resolution of the pen front end, can respond to rapid input, and can sufficiently respond to high image quality. For example, 300ppi, further The line width of the black matrix of a touch panel with high-resolution pixels of 500 ppi or higher is preferably a thin line of about 1 μm to 6 μm.

另一方面,近年來,正在開發不使用觸控面板,而使液晶胞內或顯示裝置具有觸控感測功能之稱為「內嵌式(in cell)」的觸控感測技術。 On the other hand, in recent years, a touch sensing technology called “in-cell” that makes a liquid crystal cell or a display device have a touch sensing function without using a touch panel is being developed.

如上所述,嘗試在具備彩色濾光片的顯示裝置基板、內設薄膜電晶體(TFT)等主動元件之陣列基板的任一者或者兩者設置觸控電極群,且利用產生在觸控電極群間之靜電電容的變化來進行觸控感測之內嵌式化。然而,在有機薄膜基底(base)的觸控面板中,基材的伸縮(例如,熱膨脹係數)大,包含紅像素、綠像素、藍像素或黑色矩陣的圖案之8μm以上30μm以下左右之微細像素難以進行對位(對準;alignment),難以採用作為顯示裝置基板。 As described above, it is attempted to provide a touch electrode group on any one or both of a display device substrate provided with a color filter and an array substrate having an active element such as a thin film transistor (TFT), and use the The change in the electrostatic capacitance between the groups is used to embed touch sensing. However, in an organic thin film base touch panel, the substrate has a large expansion and contraction (for example, a thermal expansion coefficient), and includes fine pixels of about 8 μm to 30 μm in a pattern including red pixels, green pixels, blue pixels, or black matrix It is difficult to perform alignment, and it is difficult to adopt it as a display device substrate.

專利文獻1揭示了在塑膠薄膜上積層有透明導電膜和遮光性金屬膜之構成。然而,在此構成中難以使用作為「內嵌式」,由於是屬於薄膜的基材,所以無法採用作為高畫質的彩色濾光片。專利文獻1未暗示內嵌式技術及與彩色濾光片的一體化。例如,專利文獻1例示了鋁作為遮光性金屬膜層。在紅像素、綠像素、藍像素或黑色矩陣的製造步驟中,雖然利用使用鹼性顯影液的光微影(photo lithography)的方法,但鋁的金屬配線會被鹼性顯影液腐蝕,難以形成彩色濾光片。 Patent Document 1 discloses a configuration in which a transparent conductive film and a light-shielding metal film are laminated on a plastic film. However, it is difficult to use this structure as an "embedded type". Since it is a base material of a thin film, it cannot be used as a high-quality color filter. Patent Document 1 does not suggest an in-line technology and integration with a color filter. For example, Patent Document 1 exemplifies aluminum as a light-shielding metal film layer. In the manufacturing steps of red pixels, green pixels, blue pixels, or black matrices, although a photo lithography method using an alkaline developer is used, the metal wiring of aluminum is corroded by the alkaline developer and is difficult to form. Color filters.

再者,專利文獻1未揭示考量了遮光性金屬膜的表面的光反射會射入顯示裝置的陣列基板所具備之 電晶體的通道層,而造成電晶體的錯誤作動之可能性的技術。 In addition, Patent Document 1 does not disclose what is included in the array substrate in which the light reflection on the surface of the light-shielding metal film is incident on the array substrate of the display device. A technology that uses the channel layer of a transistor and the possibility of erroneous operation of the transistor.

專利文獻2揭示了全反射率低的吸光層和導電層的積層構成及具備此積層構成的觸控面板。然而,專利文獻2並未暗示關於內嵌式技術及彩色濾光片的一體化。例如,專利文獻2例示了鋁作為導電性圖案(或導電層)的材料。在紅像素、綠像素、藍像素或黑色矩陣的製造步驟中,雖然利用使用鹼性顯影液的光微影的方法,但鋁的金屬配線易會鹼性顯影液腐蝕,難以形成彩色濾光片。 Patent Document 2 discloses a laminated structure of a light absorbing layer and a conductive layer having a low total reflectance, and a touch panel including the laminated structure. However, Patent Document 2 does not suggest the integration of the in-cell technology and the color filter. For example, Patent Literature 2 exemplifies aluminum as a material of a conductive pattern (or a conductive layer). In the manufacturing steps of red pixels, green pixels, blue pixels, or black matrices, although the light lithography method using an alkaline developer is used, the metal wiring of aluminum is easily corroded by the alkaline developer and it is difficult to form a color filter. .

此外,專利文獻2也揭示了導電層的金屬為銅(Cu)。然而,例如,當基材設為無鹼玻璃等的玻璃基板時,銅或銅氧化物、銅氮氧化物對於基板不會有充分的密接性,以黏貼玻璃紙膠帶(cellophane tape)等並剝離之程度的黏著力即會簡單地被剝離,所以並不實用。專利文獻2並未揭示導電層設為銅時之密接性改善的具體技術。又,銅容易隨時間經過而在其表面形成銅的氧化物,在電性安裝中可靠性低。專利文獻2並未揭示關於考量了安裝之接觸電阻的改善方式、觸控感測用配線的圖案形成手段之技術。 In addition, Patent Document 2 discloses that the metal of the conductive layer is copper (Cu). However, for example, when the base material is a glass substrate such as alkali-free glass, copper, copper oxide, and copper oxynitride do not have sufficient adhesion to the substrate, and a cellophane tape or the like is adhered and peeled off. A degree of adhesion is simply peeled off, so it is not practical. Patent Literature 2 does not disclose a specific technique for improving the adhesion when the conductive layer is made of copper. In addition, copper easily forms copper oxides on the surface with time, and has low reliability in electrical installation. Patent Document 2 does not disclose a technique that takes into consideration an improvement method of mounting contact resistance and a pattern forming method for touch sensing wiring.

專利文獻3揭示了包含銦(In)和錫(Sn)和鋅(Zn)的氧化物之透明導電膜。然而,專利文獻3並未揭示穩定且具高可靠性之電性連接用的觸控感測用配線構造,例如將第1導電性金屬氧化物層、由銅層或銅合金層所構成的金屬層、和第2導電性金屬氧化物層、和以 碳作為主要色材的黑色層依序以分別相等的線寬積層在透明基板上而成之構成的黑色配線,形成作為觸控感測用配線之技術。亦即,專利文獻3所揭示的技術並未考量作為觸控感測用配線所需要之電性安裝的穩定性、和作為顯示裝置的可視性。 Patent Document 3 discloses a transparent conductive film containing an oxide of indium (In), tin (Sn), and zinc (Zn). However, Patent Document 3 does not disclose a touch sensing wiring structure for stable and highly reliable electrical connection, for example, a first conductive metal oxide layer, a metal composed of a copper layer or a copper alloy layer Layer, and a second conductive metal oxide layer, and The black layers made of carbon as the main color material are sequentially laminated with black wires of equal line width on a transparent substrate, forming a technology for touch sensing wiring. That is, the technology disclosed in Patent Document 3 does not consider the stability of electrical installation required for the touch sensing wiring and the visibility as a display device.

專利文獻4揭示了進行液晶驅動的線依序掃描時抑制畫質降低之手段。專利文獻4係在驅動液晶的主動元件(TFT:Thin Film Transistor)使用了多晶矽半導體。此技術係藉由具備包含閂鎖(latch)部之轉移電路以進行電位保持的工夫,來防止漏電流(off-leak current)多之多晶矽的TFT固有之掃描訊號線的電位降低,並且防止液晶顯示的畫質降低之技術。 Patent Document 4 discloses a method of suppressing a decrease in image quality when performing sequential scanning of liquid crystal driven lines. Patent Document 4 uses a polycrystalline silicon semiconductor as an active element (TFT: Thin Film Transistor) for driving a liquid crystal. This technology uses a transfer circuit including a latch to maintain the potential to prevent the potential of the scanning signal line inherent to a polycrystalline silicon TFT with many off-leak currents from decreasing, and prevents liquid crystals. Display quality degradation technology.

先前技術文獻 Prior art literature 專利文獻 Patent literature

專利文獻1 日本國特開2011-65393號公報 Patent Document 1 Japanese Patent Application Publication No. 2011-65393

專利文獻2 日本國特表2013-540331號公報 Patent Document 2 Japanese National Publication No. 2013-540331

專利文獻3 日本國特開2012-26039號公報 Patent Document 3 JP 2012-26039

專利文獻4 日本國特開2014-182203號公報 Patent Document 4 Japanese Patent Application Publication No. 2014-182203

本發明係有鑑於上述問題而研發者,本發明的第1目的在提供一種具備在與屬於無鹼玻璃之基板的密接性高的狀態且可視性良好的觸控感測用配線之顯示裝置基板。 The present invention was developed in view of the above-mentioned problems, and a first object of the present invention is to provide a display device substrate including touch sensing wiring in a state of high adhesion to a substrate belonging to an alkali-free glass and having good visibility .

本發明的第2的目的在提供一種高解析度且可因應高速的觸控輸入之顯示裝置、及使用於其之顯示裝置基板、具備彩色濾光片的顯示裝置基板。 A second object of the present invention is to provide a display device capable of responding to high-speed touch input with high resolution, a display device substrate used therefor, and a display device substrate provided with a color filter.

本發明的第3目的在提供一種可進行穩定的電性安裝之顯示裝置基板。 A third object of the present invention is to provide a display device substrate capable of stable electrical mounting.

為了達成上述目的,本發明的第1觀點係具備有以下的構成要素。亦即,提供一種顯示裝置基板,其係具備:透明基板,該透明基板為無鹼玻璃;及黑色配線,其係在前述透明基板上,配置於複數個像素間,包含第1導電性金屬氧化物層、配置於前述第1導電性金屬氧化物層上的金屬層、配置於前述金屬層上的第2導電性金屬氧化物層、和配置於前述第2導電性金屬氧化物層上的黑色層;前述黑色配線係延伸於第1方向,在與前述第1方向大致正交的第2方向隔著既定間隔配置有複數條前述黑色配線;前述黑色配線包含引繞配線,該引繞配線係延伸至包含前述複數個像素的顯示區域之外部,且在端部具備前述第2導電性金屬氧化物層已露出的端子部;前述金屬層係由銅或銅合金形成;前述黑色層係以碳作為主要的色材;前述第1及第2導電性金屬氧化物層係由氧化銦和氧化鋅和氧化錫的混合氧化物形成; 前述第1導電性金屬氧化物層、前述金屬層、前述第2導電性金屬氧化物層及前述黑色層係為等線寬。 To achieve the above object, a first aspect of the present invention includes the following constituent elements. That is, a display device substrate is provided which includes: a transparent substrate, which is an alkali-free glass; and black wiring, which is arranged on the transparent substrate and is disposed between a plurality of pixels, and includes a first conductive metal oxide. An object layer, a metal layer disposed on the first conductive metal oxide layer, a second conductive metal oxide layer disposed on the metal layer, and a black color disposed on the second conductive metal oxide layer The black wiring system extends in the first direction, and a plurality of the black wirings are arranged at predetermined intervals in a second direction that is substantially orthogonal to the first direction; the black wiring includes a routing wiring, and the routing system Extending to the outside of the display area including the plurality of pixels, the terminal portion is provided with an exposed end portion of the second conductive metal oxide layer; the metal layer is formed of copper or a copper alloy; and the black layer is formed of carbon. As the main color material; the first and second conductive metal oxide layers are formed of a mixed oxide of indium oxide and zinc oxide and tin oxide; The first conductive metal oxide layer, the metal layer, the second conductive metal oxide layer, and the black layer have equal line widths.

又,本發明的第2觀點的特徵為具備以下的實施態樣。亦即,提供一種顯示裝置基板的製造方法,該顯示裝置基板具備黑色配線,該黑色配線係在屬於無鹼玻璃的透明基板上具備複數個像素之顯示區域,區分前述複數個像素,且在延伸至前述顯示區域外的端部具有端子部,該顯示裝置基板的製造方法具備:成膜步驟,係在屬於無鹼玻璃的透明基板上形成第1導電性金屬氧化物層、由銅層或銅合金層所構成的金屬層、和第2導電性金屬氧化物層;塗布步驟,係至少將包含碳和鹼可溶性丙烯酸樹脂的黑色感光液塗布於前述第2導電性金屬氧化物層上,並使其乾燥而作成黑色膜;黑色膜的圖案形成步驟,係透過具備前述黑色配線的第1圖案和透光率與前述第1圖案不同之前述端子部的第2圖案之半色調光罩進行曝光,且使用鹼性顯影液將透明基板上的前述黑色膜選擇性地去除,並且殘留厚的黑色膜作為前述黑色配線的圖案,形成薄的黑色膜作為前述端子部的圖案;溼蝕刻步驟,係藉由溼蝕刻法,將未被前述第1導電性金屬氧化物層、由前述銅層或銅合金層所構成的金屬層、和前述第2導電性金屬氧化物層之3層黑色膜覆蓋的部分加以去除;及 乾蝕刻步驟,係藉由乾蝕刻法將厚的黑色膜的表面的一部分於膜厚方向去除而作為前述黑色配線的圖案,並且將薄的黑色膜去除而作為前述端子部的圖案,以使前述端子部之第2導電氧化物層的表面露出;在前述透明基板上形成黑色配線,該黑色配線係將第1導電性金屬氧化物層、由銅層或銅合金層所構成的金屬層、第2導電性金屬氧化物層和以碳為主要色材的黑色層依序分別以等線寬積層而成。 The second aspect of the present invention is characterized by the following aspects. That is, a method for manufacturing a display device substrate is provided. The display device substrate is provided with black wiring. The black wiring is a display area having a plurality of pixels on a transparent substrate belonging to an alkali-free glass. The plurality of pixels are distinguished from each other and extended. A terminal portion beyond the display area has a terminal portion. The method for manufacturing a display device substrate includes a film forming step of forming a first conductive metal oxide layer, a copper layer, or copper on a transparent substrate that is an alkali-free glass. A metal layer composed of an alloy layer and a second conductive metal oxide layer; the coating step includes applying a black photosensitive liquid containing at least carbon and an alkali-soluble acrylic resin to the second conductive metal oxide layer, and The black film is dried to form a black film. The patterning step of the black film is performed through a half-tone mask provided with the first pattern of the black wiring and the second pattern of the terminal portion having a light transmittance different from the first pattern. In addition, the black film on the transparent substrate is selectively removed using an alkaline developing solution, and a thick black film remains as the black wiring. Pattern to form a thin black film as the pattern of the terminal portion; the wet etching step is to use a wet etching method to remove the metal not formed by the first conductive metal oxide layer, the copper layer, or the copper alloy layer And the portions covered by the three black films of the aforementioned second conductive metal oxide layer are removed; and In the dry etching step, a part of the surface of the thick black film is removed in the film thickness direction by a dry etching method as a pattern of the black wiring, and the thin black film is removed as a pattern of the terminal portion so that the foregoing The surface of the second conductive oxide layer of the terminal portion is exposed; black wiring is formed on the transparent substrate, and the black wiring is a first conductive metal oxide layer, a metal layer composed of a copper layer or a copper alloy layer, and the first 2 The conductive metal oxide layer and the black layer with carbon as the main color material are sequentially laminated with equal line widths, respectively.

又,本發明的第3觀點的特徵為具備以下的實施態樣。亦即,提供一種顯示裝置,其係具備:顯示裝置基板、與前述顯示裝置基板相對向而固定的陣列基板、和配置在前述顯示裝置基板和前述陣列基板之間的液晶層;該顯示裝置係為,前述陣列基板係在平面視圖中,具備:配置在複數個像素的鄰接位置及與前述黑色配線重疊的位置之主動元件;與前述主動元件電性連接的金屬配線;以及在與前述黑色配線交叉的方向延伸的觸控金屬配線,其中該顯示裝置基板具備:透明基板,該透明基板為無鹼玻璃;及黑色配線,其係在前述透明基板上,配置於複數個像素間,且包含第1導電性金屬氧化物層、配置於前述第1導電性金屬氧化物層上的金屬層、配置於前述金屬層上的第2導電性金屬氧化物層、和配置於前述第2導電性金屬氧化物層上的黑色層; 前述黑色配線係延伸於第1方向,在與前述第1方向大致正交的第2方向隔著既定間隔配置有複數條前述黑色配線;前述黑色配線包含引繞配線,該引繞配線係延伸至包含前述複數個像素的顯示區域之外部,且在端部具備露出了前述第2導電性金屬氧化物層的端子部;前述金屬層係由銅或銅合金形成;前述黑色層係以碳作為主要的色材;前述第1及第2導電性金屬氧化物層係由氧化銦和氧化鋅和氧化錫的混合氧化物形成;前述第1導電性金屬氧化物層、前述金屬層、前述第2導電性金屬氧化物層及前述黑色層係為等線寬。 A third aspect of the present invention is characterized by the following aspects. That is, a display device is provided, comprising: a display device substrate; an array substrate fixed opposite to the display device substrate; and a liquid crystal layer disposed between the display device substrate and the array substrate; The array substrate is, in a plan view, provided with: an active element disposed at a position adjacent to a plurality of pixels and at a position overlapping the black wiring; a metal wiring electrically connected to the active element; and a black wiring Touch display metal wiring extending in a cross direction, wherein the display device substrate includes: a transparent substrate, the transparent substrate is an alkali-free glass; and black wiring, which is arranged on the transparent substrate and is arranged between a plurality of pixels, and includes a first 1 a conductive metal oxide layer, a metal layer disposed on the first conductive metal oxide layer, a second conductive metal oxide layer disposed on the metal layer, and a second conductive metal oxide Black layer on the physical layer; The black wiring system extends in a first direction, and a plurality of the black wiring systems are arranged at predetermined intervals in a second direction that is substantially orthogonal to the first direction. The black wiring system includes a routing wiring that extends to The outside of the display area including the plurality of pixels, and a terminal portion exposing the second conductive metal oxide layer is provided at an end portion; the metal layer is formed of copper or a copper alloy; and the black layer is mainly composed of carbon. Color material; the first and second conductive metal oxide layers are formed of a mixed oxide of indium oxide and zinc oxide and tin oxide; the first conductive metal oxide layer, the metal layer, and the second conductive material The linear metal oxide layer and the black layer have a uniform line width.

又,本發明的第4觀點的特徵為具備以下的實施態樣。亦即,提供一種顯示裝置,其係將顯示裝置基板與陣列基板以相面對的方式隔著液晶層貼合;該顯示裝置係為,前述顯示裝置基板係在前述透明樹脂層上,於平面視圖中進一步具備與前述黑色配線交叉的複數個透明導電膜配線;前述陣列基板係在平面視圖中,於複數個像素的鄰接位置及與前述黑色配線重疊的位置具有主動元件,其中該顯示裝置基板具備:透明基板,該透明基板為無鹼玻璃;及黑色配線,其係在前述透明基板上,配置於複數個像素間,包含第1導電性金屬氧化物層、配置於前述第 1導電性金屬氧化物層上的金屬層、配置於前述金屬層上的第2導電性金屬氧化物層、和配置於前述第2導電性金屬氧化物層上的黑色層;前述黑色配線係延伸於第1方向,在與前述第1方向大致正交的第2方向隔著既定間隔配置有複數條前述黑色配線;前述黑色配線包含引繞配線,該引繞配線係在延伸至包含前述複數個像素的顯示區域之外部,且在端部具備露出了前述第2導電性金屬氧化物層的端子部;前述金屬層係由銅或銅合金形成;前述黑色層係以碳作為主要的色材;前述第1及第2導電性金屬氧化物層係由氧化銦和氧化鋅和氧化錫的混合氧化物形成;前述第1導電性金屬氧化物層、前述金屬層、前述第2導電性金屬氧化物層及前述黑色層係為等線寬。 A fourth aspect of the present invention is characterized by the following aspects. That is, a display device is provided, in which a display device substrate and an array substrate are bonded to face each other across a liquid crystal layer; the display device is such that the display device substrate is on the transparent resin layer on a plane The view further includes a plurality of transparent conductive film wirings crossing the black wirings; the array substrate has an active element in a plan view at adjacent positions of the plurality of pixels and at positions overlapping with the black wirings, wherein the display device substrate It includes: a transparent substrate, which is an alkali-free glass; and black wiring, which is arranged on the transparent substrate and is arranged between a plurality of pixels, and includes a first conductive metal oxide layer and is arranged on the first 1 a metal layer on the conductive metal oxide layer, a second conductive metal oxide layer disposed on the metal layer, and a black layer disposed on the second conductive metal oxide layer; the black wiring system extends In the first direction, a plurality of the black wirings are arranged at a predetermined interval in a second direction that is substantially orthogonal to the first direction. The black wirings include routing wiring, and the routing wiring is extended to include the plurality of The pixel is provided outside the display area of the pixel, and a terminal portion is provided at the end portion thereof to expose the second conductive metal oxide layer; the metal layer is formed of copper or a copper alloy; and the black layer is made of carbon as a main color material; The first and second conductive metal oxide layers are formed of a mixed oxide of indium oxide, zinc oxide, and tin oxide; the first conductive metal oxide layer, the metal layer, and the second conductive metal oxide The layer and the black layer are of equal line width.

根據本發明,可提供一種具備在與屬於無鹼玻璃的基板密接性高的狀態且可視性良好的觸控感測用配線之顯示裝置基板。 According to the present invention, it is possible to provide a display device substrate including a touch-sensing wiring in a state of high adhesion to a substrate belonging to an alkali-free glass and having good visibility.

又,根據本發明,可提供一種高解析度且可因應高速的觸控輸入之顯示裝置、及使用於其之顯示裝置基板、具備彩色濾光片的顯示裝置基板。 Furthermore, according to the present invention, it is possible to provide a display device with high resolution and capable of responding to high-speed touch input, a display device substrate used therefor, and a display device substrate provided with a color filter.

又,根據本發明,可提供一種能進行穩定的電性安裝之顯示裝置基板。 Furthermore, according to the present invention, a display device substrate capable of stable electrical mounting can be provided.

1‧‧‧第1導電性金屬氧化物層 1‧‧‧ the first conductive metal oxide layer

2‧‧‧金屬層 2‧‧‧ metal layer

3‧‧‧第2導電性金屬氧化物層 3‧‧‧ 2nd conductive metal oxide layer

4‧‧‧黑色層 4‧‧‧ black layer

4a‧‧‧黑色配線圖案 4a‧‧‧Black wiring pattern

4b‧‧‧端子部圖案 4b‧‧‧Terminal part pattern

5‧‧‧端子部 5‧‧‧Terminal

6‧‧‧黑色配線 6‧‧‧ Black Wiring

6a‧‧‧引繞配線(第1配線) 6a‧‧‧Leading wiring (first wiring)

6b‧‧‧虛擬配線(第2配線) 6b‧‧‧Virtual wiring (second wiring)

7‧‧‧透明導電膜配線 7‧‧‧ transparent conductive film wiring

8‧‧‧黑色氧化物層 8‧‧‧ black oxide layer

9‧‧‧透明樹脂層 9‧‧‧ transparent resin layer

15、25‧‧‧透明基板 15, 25‧‧‧ transparent substrate

18‧‧‧黑色層 18‧‧‧ black layer

19‧‧‧矩形顯示區域 19‧‧‧ Rectangle display area

21~23‧‧‧絕緣層 21 ~ 23‧‧‧ Insulation

25、35、45‧‧‧陣列基板 25, 35, 45‧‧‧ array substrates

30‧‧‧液晶層 30‧‧‧LCD layer

32‧‧‧共同電極 32‧‧‧Common electrode

36‧‧‧像素電極 36‧‧‧pixel electrode

37、42‧‧‧觸控金屬配線 37, 42‧‧‧touch metal wiring

40‧‧‧源極線 40‧‧‧source line

41‧‧‧閘極線 41‧‧‧Gate line

43‧‧‧遮光圖案 43‧‧‧Shading pattern

SE‧‧‧源極電極 SE‧‧‧Source electrode

DE‧‧‧汲極電極 DE‧‧‧Drain electrode

GE‧‧‧閘極電極 GE‧‧‧Gate electrode

49‧‧‧通道層 49‧‧‧channel floor

46‧‧‧電晶體(主動元件) 46‧‧‧Transistor (active element)

47‧‧‧接觸孔 47‧‧‧ contact hole

100、200‧‧‧顯示裝置基板 100, 200‧‧‧ display device substrate

C1~C5‧‧‧靜電電容 C1 ~ C5‧‧‧ electrostatic capacitor

圖1係本發明的一實施形態之顯示裝置基板的部分剖面圖。 FIG. 1 is a partial cross-sectional view of a display device substrate according to an embodiment of the present invention.

圖2係說明本實施形態的顯示裝置基板的其他例之部分剖面圖。 FIG. 2 is a partial cross-sectional view illustrating another example of a display device substrate according to this embodiment.

圖3係本發明的一實施形態之顯示裝置基板的示意俯視圖,顯示紅像素、綠像素、藍像素等的像素、與區分此等像素且配設在長邊方向之黑色配線的一例之圖。 FIG. 3 is a schematic plan view of a display device substrate according to an embodiment of the present invention, showing an example of pixels such as red pixels, green pixels, and blue pixels, and black wiring that distinguishes these pixels and is arranged in the long-side direction.

圖4係說明一實施形態的顯示裝置基板中之黑色配線的端子部的一例之示意俯視圖。 4 is a schematic plan view illustrating an example of a terminal portion of a black wiring in a display device substrate according to an embodiment.

圖5係一實施形態的顯示裝置基板中之黑色配線的端子部的部分剖面圖。 5 is a partial cross-sectional view of a terminal portion of a black wiring in a display device substrate according to an embodiment.

圖6係本發明的一實施形態之顯示裝置的部分剖面圖。 FIG. 6 is a partial cross-sectional view of a display device according to an embodiment of the present invention.

圖7係圖6所示之陣列基板的俯視圖,顯示觸控金屬配線和遮光圖案位置之圖。 FIG. 7 is a plan view of the array substrate shown in FIG. 6, showing a position of a touch metal wiring and a light shielding pattern.

圖8係顯示圖7所示之陣列基板的線C-C’之剖面的一例之圖。 Fig. 8 is a diagram showing an example of a cross section taken along a line C-C 'of the array substrate shown in Fig. 7.

圖9係針對保持於圖7所示之陣列基板的觸控金屬配線、和顯示裝置基板的黑色配線之間的靜電電容進行說明之剖面圖。 FIG. 9 is a cross-sectional view illustrating the electrostatic capacitance between the touch metal wirings held on the array substrate shown in FIG. 7 and the black wirings on the display device substrate.

圖10係顯示在本發明的一實施形態之顯示裝置基板中,在黑色配線上積層有彩色濾光片層和透明樹脂層之構成的一例之圖。 FIG. 10 is a diagram showing an example of a configuration in which a color filter layer and a transparent resin layer are laminated on a black wiring in a display device substrate according to an embodiment of the present invention.

圖11係具備圖10所示之顯示裝置基板的顯示裝置的部分剖面圖。 11 is a partial cross-sectional view of a display device including the display device substrate shown in FIG. 10.

圖12係本發明的一實施形態之顯示裝置基板的部分剖面圖。 FIG. 12 is a partial cross-sectional view of a display device substrate according to an embodiment of the present invention.

圖13係具備圖12所示之顯示裝置基板100的顯示裝置的部分剖面圖。 FIG. 13 is a partial cross-sectional view of a display device including the display device substrate 100 shown in FIG. 12.

圖14係從觀察者方向V觀看圖13所示之顯示裝置基板的俯視圖。 FIG. 14 is a plan view of the display device substrate shown in FIG. 13 as viewed from the viewer's direction V. FIG.

圖15係顯示本發明的一實施形態之顯示裝置基板之各個製造步驟之部分剖面圖。 15 is a partial cross-sectional view showing each manufacturing step of a display device substrate according to an embodiment of the present invention.

圖16係本發明的一實施形態之顯示裝置基板的部分剖面圖。 16 is a partial cross-sectional view of a display device substrate according to an embodiment of the present invention.

圖17係本發明的一實施形態之顯示裝置基板的部分剖面圖。 FIG. 17 is a partial cross-sectional view of a display device substrate according to an embodiment of the present invention.

圖18係顯示本發明的一實施形態之顯示裝置基板之各個製造步驟之部分剖面圖。 18 is a partial cross-sectional view showing each manufacturing step of a display device substrate according to an embodiment of the present invention.

圖19係用以說明本發明的一實施形態之顯示裝置基板的其他例之圖。 FIG. 19 is a diagram for explaining another example of a display device substrate according to an embodiment of the present invention.

圖20係具備圖19所示之顯示裝置基板的一實施形態之顯示裝置的部分剖面圖。 20 is a partial cross-sectional view of a display device including an embodiment of the display device substrate shown in FIG. 19.

圖21係用以說明本發明的一實施形態之顯示裝置基板的其他例之圖。 21 is a diagram for explaining another example of a display device substrate according to an embodiment of the present invention.

圖22係具備圖21所示之顯示裝置基板之一實施形態的顯示裝置的部分剖面圖。 22 is a partial cross-sectional view of a display device including an embodiment of the display device substrate shown in FIG. 21.

[用以實施發明的形態] [Form for Implementing Invention]

以下,參照圖式,說明關於本發明的實施形態。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

在以下說明的各實施形態中,係針對特徵的部分進行說明,例如,與通常的顯示裝置的構成要素沒有差異的部分便省略其說明。此外,各實施形態雖以本發明的顯示裝置基板、或者具備其之液晶顯示裝置為例說明,但本發明的顯示裝置基板亦可適用在如有機EL(Electro-Luminescence;電致發光)顯示裝置之類的其它顯示裝置。 In each embodiment described below, the features are described. For example, the description of the parts that are not different from the constituent elements of a normal display device is omitted. In addition, although the embodiments are described using the display device substrate of the present invention or a liquid crystal display device provided with the display device as an example, the display device substrate of the present invention can also be applied to an organic EL (Electro-Luminescence) display device And other display devices.

以下,參照圖式,說明關於本發明的一實施形態之顯示裝置基板100。此外,以下的所有圖式,係以理解的容易度為優先而適當地調整各構成要素的厚度或尺寸的比例。 Hereinafter, a display device substrate 100 according to an embodiment of the present invention will be described with reference to the drawings. In addition, in all the drawings below, the ratio of the thickness or the size of each component is appropriately adjusted with priority given to ease of understanding.

圖1為本發明的一實施形態之顯示裝置基板的部分剖面圖。 FIG. 1 is a partial cross-sectional view of a display device substrate according to an embodiment of the present invention.

本實施形態的顯示裝置基板具有透明基板15和黑色配線6。黑色配線6具有第1導電性金屬氧化物層1、金屬層2、第2導電性金屬氧化物層3和黑色層4。 The display device substrate of this embodiment includes a transparent substrate 15 and a black wiring 6. The black wiring 6 includes a first conductive metal oxide layer 1, a metal layer 2, a second conductive metal oxide layer 3, and a black layer 4.

如圖1所示,在透明基板15上具備有由第1導電性金屬氧化物層1、金屬層2、第2導電性金屬氧化物層3和黑色層4所構成的黑色配線6。黑色配線6係以例如相對於紙面呈垂直方向的條狀(stripe)圖案配 設有複數個。第1導電性氧化物層1、金屬層2、第2導電性金屬氧化物層3和黑色層4係使用周知的光微影方法形成圖案。關於形成黑色配線6的方法,將於後詳細說明。此外,上述導電性金屬氧化物有時記載為混合氧化物或者複合氧化物。 As shown in FIG. 1, a black wiring 6 including a first conductive metal oxide layer 1, a metal layer 2, a second conductive metal oxide layer 3, and a black layer 4 is provided on a transparent substrate 15. The black wiring 6 is arranged in a stripe pattern perpendicular to the paper surface, for example. There are multiple. The first conductive oxide layer 1, the metal layer 2, the second conductive metal oxide layer 3, and the black layer 4 are patterned using a well-known photolithography method. A method of forming the black wiring 6 will be described in detail later. The conductive metal oxide may be described as a mixed oxide or a composite oxide.

圖2係說明本實施形態的顯示裝置基板的其他例子之部分剖面圖,係在圖1所示的顯示裝置基板進一步積層有透明樹脂層9而成之顯示裝置基板的部分剖面圖。 FIG. 2 is a partial cross-sectional view illustrating another example of a display device substrate according to this embodiment, and is a partial cross-sectional view of a display device substrate in which the transparent resin layer 9 is further laminated on the display device substrate shown in FIG. 1.

圖2所示的顯示裝置基板100係在黑色配線6上積層有透明樹脂層9。透明樹脂層9可藉由具有熱硬化性的丙烯酸樹脂等形成。透明樹脂層9的膜厚係可任意地設定。黑色層4、透明樹脂層9亦可為例如積層折射率等光學特性彼此不同的複數個層之構成。此外,在此,由於後述之顯示裝置(例如圖6、圖16所示)的說明之關係,將形成有黑色配線6之膜面的位置設成與圖1上下顛倒。 The display device substrate 100 shown in FIG. 2 has a transparent resin layer 9 laminated on the black wiring 6. The transparent resin layer 9 can be formed of an acrylic resin or the like having thermosetting properties. The film thickness of the transparent resin layer 9 can be arbitrarily set. The black layer 4 and the transparent resin layer 9 may be constituted by a plurality of layers having different optical characteristics such as a refractive index. Here, the position of the film surface on which the black wiring 6 is formed is set upside down from FIG. 1 due to the relationship of the description of a display device described later (for example, shown in FIGS. 6 and 16).

透明基板15的基材為熱膨脹率小的無鹼玻璃。與使用於後述的陣列基板之透明基板25同樣,期望是使用玻璃材質的基板。可適用例如形成被稱為薄膜電晶體(TFT)之電晶體等的主動元件,且使用於有機EL顯示裝置或液晶顯示裝置的玻璃基板。在本實施形態中採用作為透明基板15、25的基材的無鹼玻璃是顯示裝置用基板材料,以實質上不含鹼成分的鋁矽酸鹽玻璃為代表。無鹼玻璃是指,將鈉(Na)、鉀(K)之類的鹼金屬或者 此等的氧化物以鹼元素計含有率在1000ppm以下者規定為實質上不含鹼成分。鹼元素的含有率以低者為佳。此外,以下的說明中,將形成有液晶驅動用電晶體的基板稱為陣列基板。又,有時將電晶體稱為薄膜電晶體或主動元件。 The base material of the transparent substrate 15 is an alkali-free glass having a small thermal expansion coefficient. As with the transparent substrate 25 used in the array substrate described later, a substrate made of a glass material is desirably used. For example, it is suitable for forming an active element such as a thin film transistor (TFT) and is used for a glass substrate of an organic EL display device or a liquid crystal display device. The alkali-free glass used as the base material of the transparent substrates 15 and 25 in this embodiment is a substrate material for a display device, and is typified by aluminosilicate glass that does not substantially contain an alkali component. Alkali-free glass refers to an alkali metal such as sodium (Na), potassium (K) or Those oxides having a content of 1,000 ppm or less in terms of an alkali element are defined as being substantially free of an alkali component. The lower the content of the alkali element, the better. In the following description, a substrate on which a liquid crystal driving transistor is formed is referred to as an array substrate. The transistor is sometimes called a thin film transistor or an active device.

黑色配線6較佳為第1導電性金屬氧化物層1的線寬和金屬層2的線寬、第2導電性金屬氧化物層3的線寬、以及以碳為主要色材的黑色層4的線寬是分別大致相等的線寬。 The black wiring 6 is preferably the line width of the first conductive metal oxide layer 1 and the line width of the metal layer 2, the line width of the second conductive metal oxide layer 3, and the black layer 4 mainly composed of carbon. The line widths are approximately equal line widths, respectively.

由含銦的第1導電性金屬氧化物層(接著層)1、由銅層或銅合金層所構成的金屬層2、以及黑色層4所構成的黑色配線6的厚度係可設成總共1μm以下。當黑色配線6的厚度超過2μm時其凹凸會對液晶配向產生不良影響,所以期望設成1.5μm以下。 The thickness of the black wiring 6 made of the first conductive metal oxide layer (adhesive layer) containing indium 1, the metal layer 2 made of a copper layer or a copper alloy layer, and the black layer 4 can be set to a total of 1 μm. the following. When the thickness of the black wiring 6 exceeds 2 μm, the unevenness of the black wiring 6 adversely affects the liquid crystal alignment, so it is desirable to set it to 1.5 μm or less.

本實施形態的技術係以例如300ppi(pixel per inch)、進一步為500ppi以上的高畫質像素的顯示裝置作為對象。將本實施形態的顯示裝置基板採用於高畫質像素的顯示裝置時,相當於黑色配線6之黑色矩陣的線寬必須以1μm以上6μm以下的範圍內的細線形成圖案。例如,在顯示裝置基板中,若對於黑色配線之4μm的線寬有±1μm以上的偏差,則在顯示品質面會發生不均,且像素開口率會降低,所以無法當作顯示裝置的基板使用。 The technology of this embodiment is directed to a display device with high-quality pixels of, for example, 300 ppi (pixel per inch) and further 500 ppi or more. When the display device substrate of this embodiment is used for a high-resolution pixel display device, the line width of the black matrix corresponding to the black wiring 6 must be patterned with thin lines in a range of 1 μm to 6 μm. For example, in a display device substrate, if there is a deviation of ± 1 μm or more of the 4 μm line width of the black wiring, the display quality surface will be uneven, and the pixel aperture ratio will be reduced, so it cannot be used as a substrate for a display device .

此外,將構成黑色配線6的第1導電性金屬氧化物層1、金屬層2、第2導電性金屬氧化物層3和黑色層4在各自的製造步驟中相互對位,也不是實際的情 況。在製造步驟中將各層彼此相互對位時,有可能會產生約±1.5μm以上的偏差。因此,由細線形成的觀點來看,以不會對顯示裝置的像素的開口率產生影響之方式且在複數層(複數步驟)形成同一圖案之方式進行對位是相當困難的。 In addition, it is not practical to align the first conductive metal oxide layer 1, the metal layer 2, the second conductive metal oxide layer 3, and the black layer 4 that constitute the black wiring 6 in the respective manufacturing steps. condition. When the layers are aligned with each other in the manufacturing process, a deviation of about ± 1.5 μm or more may occur. Therefore, from the viewpoint of fine line formation, it is quite difficult to perform alignment so as not to affect the aperture ratio of the pixels of the display device and form the same pattern in a plurality of layers (a plurality of steps).

本實施形態中所謂「相等線寬」意味:形成黑色配線6之各層的線寬的中心位置(與配線延伸的方向大致正交的方向之中心位置)及線寬之各自的偏差落在±0.4μm的範圍內。此外,「相等線寬」意指,如圖1、圖17所示,黑色層4、第2導電性氧化物層3、金屬層2、第1導電性氧化物層1和黑色層18的剖面形狀係在垂直方向2(或厚度方向)大致對齊。例如在500ppi的高畫質像素中,紅(R)綠(G)藍(B)三色的像素間距為17μm左右,而在例如4μm線寬的黑色矩陣(遮光層),考量兩層金屬的各自對位容許誤差時,其線寬為大約10μm。於此情況,像素開口率成為35%左右,無法作為顯示裝置使用。例如,當黑色矩陣的線寬為4±0.4μm時,像素開口率成為約60%。 The so-called "equal line width" in this embodiment means that the center position of the line width of each layer forming the black wiring 6 (the center position in a direction substantially orthogonal to the direction in which the wiring extends) and the deviation of the line width fall within ± 0.4 μm. In addition, "equal line width" means a cross section of the black layer 4, the second conductive oxide layer 3, the metal layer 2, the first conductive oxide layer 1, and the black layer 18 as shown in Figs. 1 and 17. The shapes are approximately aligned in the vertical direction 2 (or thickness direction). For example, in a 500ppi high-quality pixel, the pixel pitch of the three colors of red (R), green (G), and blue (B) is about 17 μm, and in a black matrix (light shielding layer) with a line width of 4 μm, for example, consider When the respective registration tolerances are acceptable, the line width is about 10 μm. In this case, the pixel aperture ratio is about 35%, and it cannot be used as a display device. For example, when the line width of the black matrix is 4 ± 0.4 μm, the pixel aperture ratio becomes approximately 60%.

圖1及圖2中,黑色配線6係在相對於紙面呈垂直的方向Y上以長形的條狀(stripe shape)配設。不過,在形成黑色矩陣的情況,黑色配線6可以不會與黑色矩陣產生波紋(moire)的形狀而以各種圖案形成。 In FIGS. 1 and 2, the black wirings 6 are arranged in a stripe shape in a direction Y perpendicular to the paper surface. However, when forming a black matrix, the black wirings 6 may be formed in various patterns without forming a moire shape with the black matrix.

在顯示裝置基板的矩形顯示區域19內(如圖3所示),形成複數個像素開口部。像素開口部亦可為條狀,惟可作成至少2邊平行的多角形。以2邊平行的多 角形而言,可作成例如:長方形、六角形、V字形狀(doglegged shape)等。也可將黑色配線6的圖案,作為包圍此等多角形像素的周圍的至少一部分的邊框形狀,而設成電性關閉的形狀。此等圖案形狀在平面視圖中為電性關閉的圖案、或開放一部分(外觀上設置未連結的部分)的圖案,藉此,顯示裝置周邊的電性雜訊的接收方式會改變。或者,藉由黑色配線6的圖案形狀或面積,會使顯示裝置周邊的電性雜訊的接收方式改變。 A plurality of pixel openings are formed in the rectangular display area 19 of the display device substrate (as shown in FIG. 3). The pixel openings may be strip-shaped, but they may be formed as polygons with at least two sides parallel. With 2 sides parallel As for the angle, it can be made into, for example, a rectangle, a hexagon, a doglegged shape, or the like. The pattern of the black wirings 6 may be electrically closed as a frame shape surrounding at least a part of the periphery of the polygonal pixels. These pattern shapes are electrically closed patterns or patterns that are partially open (parts that are not connected in appearance) in a plan view, whereby the manner of receiving electrical noise around the display device is changed. Or, the pattern shape or area of the black wiring 6 may change the way of receiving electrical noise around the display device.

此外,在矩形顯示區域19中,像素的開口部係以黑色配線6、與陣列基板側的金屬配線或觸控金屬配線進行區分,在平面視圖中可獲得多角形的像素形狀。或者,如之後的實施形態所示,也可另外設置黑色矩陣(BM)。本實施形態中,像素的開口部為至少兩邊平行的多角形,黑色配線6係延伸成在此兩邊的長邊方向區分像素的大致直線狀。藉由以此方式形成,可抑制黑色配線6所接收的電性雜訊。 In addition, in the rectangular display area 19, the openings of the pixels are distinguished by the black wiring 6 and the metal wiring or touch metal wiring on the array substrate side, and a polygonal pixel shape can be obtained in a plan view. Alternatively, as shown in the following embodiments, a black matrix (BM) may be separately provided. In this embodiment, the pixel opening is a polygon with at least two sides parallel to each other, and the black wiring 6 extends into a substantially linear shape that distinguishes the pixels in the longitudinal direction of the two sides. By forming in this manner, the electrical noise received by the black wiring 6 can be suppressed.

以下,說明關於黑色配線6的各層1~4及透明樹脂層9的構成例。 Hereinafter, a configuration example of each of the layers 1 to 4 of the black wiring 6 and the transparent resin layer 9 will be described.

(黑色層) (Black layer)

黑色層4係由例如分散有黑色的色材之著色樹脂所構成。若為銅的氧化物或銅合金的氧化物時,無法得到充分的黑色或低反射率,但是在本實施形態之黑色配線6表面的可視光的反射率可抑制到7%以下,且是夾持後述的金屬層2的構成,所以可同時獲得高遮光性。 The black layer 4 is made of, for example, a coloring resin in which a black color material is dispersed. When it is a copper oxide or a copper alloy oxide, sufficient black or low reflectance cannot be obtained, but the reflectance of visible light on the surface of the black wiring 6 in this embodiment can be suppressed to 7% or less, and With the structure of the metal layer 2 described later, high light-shielding properties can be obtained at the same time.

將黑色配線6作成由大約折射率1.5的透明樹脂層9覆蓋的構成,藉此與透明樹脂的界面之反射率係可在可視光的波長範圍內設成3%以下的低反射。例如,將與透明樹脂的界面之反射率設成包含光的波長430nm、540nm、620nm的反射率,可視區域400nm以上700nm以下且為0.1%以上3%以下的範圍內的低反射率。 The black wiring 6 is made of a structure covered with a transparent resin layer 9 having a refractive index of about 1.5, whereby the reflectance at the interface with the transparent resin can be set to a low reflection of 3% or less in the wavelength range of visible light. For example, the reflectance at the interface with the transparent resin is set to include low reflectance in the range of light wavelengths of 430 nm, 540 nm, and 620 nm, and a visible range of 400 nm to 700 nm and 0.1% to 3%.

黑色的色材可適用碳、奈米碳管或複數個有機顏料的混合物。使用碳作為例如相對於色材全體的量為51質量%以上的主要色材,為了調整反射色整,可添加藍或紅等的有機顏料來使用。例如,藉由調整作為起始材料之感光性黑色塗布液中之碳的濃度(降低碳濃度),可使黑色層4的再現性提升。 The black color material is suitable for carbon, nano carbon tube or a mixture of a plurality of organic pigments. Carbon is used as a main color material whose amount is, for example, 51% by mass or more with respect to the entire color material. To adjust the reflection color, an organic pigment such as blue or red can be added and used. For example, the reproducibility of the black layer 4 can be improved by adjusting the carbon concentration (reducing the carbon concentration) in the photosensitive black coating liquid as a starting material.

即便使用顯示裝置用大型曝光裝置,作為黑色配線6的畫線寬度,可以例如1μm以上6μm以下的細線進行圖案加工。此外,本實施形態中,相對於包含樹脂、硬化劑和顏料之全體的固體成分,碳濃度係設在4以上50以下的質量%的範圍內。在此,碳濃度亦可設為超過50質量%的碳量,但是當碳濃度相對於全體的固體成分超過50質量%時,會有塗膜適應性降低的傾向。又,當碳濃度設為4質量%以下時,無法獲得充分的黑色,會有基底的金屬層2的反射大而造成可視性降低的情況。在以下的實施形態中,當未表記黑色層4的碳濃度時,此碳濃度相對於全部固體成分為大約40質量%。 Even if a large exposure device for a display device is used, the line width of the black wiring 6 can be patterned with, for example, thin lines of 1 μm to 6 μm. In addition, in the present embodiment, the carbon concentration is set to a range of 4 to 50% by mass with respect to the entire solid content including the resin, the hardener, and the pigment. Here, the carbon concentration may be set to a carbon amount exceeding 50% by mass, but when the carbon concentration exceeds 50% by mass with respect to the total solid content, the coating film adaptability tends to decrease. In addition, when the carbon concentration is 4% by mass or less, sufficient black cannot be obtained, and the reflection of the underlying metal layer 2 may be large, which may reduce visibility. In the following embodiments, when the carbon concentration of the black layer 4 is not indicated, the carbon concentration is about 40% by mass based on the total solid content.

黑色層4,係可以後續步驟之光微影中的曝光或圖案的對位(alignment:對準)為優先,例如、將在 穿透測定下的光學濃度設為2以下。黑色層4除了使用碳形成以外,亦可使用複數個有機顏料的混合物作為黑色的顏色調整來形成。黑色層4的反射率,考量玻璃或透明樹脂等基材的折射率(約1.5),較理想是調整黑色色材的含量或種類、使用的樹脂、膜厚,以使黑色層4與彼等基材之界面的反射率成為3%以下。在此等條件的最佳化下,將與折射率為約1.5之玻璃等基材的界面之反射率,在可視光的波長區域內設成3%以下的低反射率。黑色層4的反射率,若考量防止光從背光單元再反射或提升觀察者的可視性,較佳是設在3%以下。此外,通常,使用於彩色濾光片的丙烯酸樹脂以及液晶材料的折射率大約落在1.5以上1.7以下的範圍。例如,也可將黏貼顯示裝置的覆蓋玻璃(保護玻璃)與顯示裝置之大約1.5以上1.7以下之範圍內的折射率的接著層作為上述樹脂使用。 The black layer 4 can be prioritized by the exposure or pattern alignment in the light lithography in the subsequent steps. For example, the The optical density in the transmission measurement is set to 2 or less. The black layer 4 may be formed using carbon, or a mixture of a plurality of organic pigments may be used as a black color adjustment. The reflectance of the black layer 4 is determined by considering the refractive index (approximately 1.5) of the substrate such as glass or transparent resin. It is desirable to adjust the content or type of the black color material, the resin used, and the film thickness so that the black layer 4 and others The reflectance at the interface of the substrate is 3% or less. Under these conditions, the reflectance at the interface with a substrate such as glass having a refractive index of about 1.5 is set to a low reflectance of 3% or less in the wavelength region of visible light. The reflectance of the black layer 4 is preferably set at 3% or less in consideration of preventing light from being reflected from the backlight unit or improving the visibility of the observer. In addition, the refractive index of acrylic resins and liquid crystal materials used for color filters generally falls within the range of 1.5 to 1.7. For example, the cover glass (protective glass) of the display device and the adhesive layer having a refractive index in the range of about 1.5 to 1.7 of the display device may be used as the resin.

(金屬層) (Metal layer)

形成金屬層2的金屬為銅或銅合金。在使用銅的薄膜、銅合金的薄膜之情況,若將金屬層2的膜厚設為100nm以上或150nm以上時,則金屬層2幾乎不會透過可視光。因此,在本實施形態的顯示裝置基板中,黑色配線6只要金屬層2的膜厚為例如100nm以上300nm以下左右,就無法獲得充分的遮光性。 The metal forming the metal layer 2 is copper or a copper alloy. When a copper thin film or a copper alloy thin film is used, when the film thickness of the metal layer 2 is 100 nm or more or 150 nm or more, the metal layer 2 hardly transmits visible light. Therefore, in the display device substrate of this embodiment, as long as the film thickness of the metal layer 2 is about 100 nm to 300 nm, the black wiring 6 cannot obtain sufficient light shielding properties.

金屬層2係可適用具抗鹼性的銅、銅合金等金屬層。需要抗鹼性時,係為例如在後續步驟中使用鹼性顯影液的顯影步驟之情況。具體而言,係為例如在形 成黑色配線6後,形成彩色濾光片、黑色矩陣等的情況等。在後述的黑色配線6形成端子部時,也需要抗鹼性。 Metal layer 2 is suitable for metal layers such as copper and copper alloys having alkali resistance. When alkali resistance is required, it is the case of the developing process using an alkaline developing solution in a subsequent process, for example. Specifically, it is In the case where the black wiring 6 is formed, a color filter, a black matrix, and the like are formed. When forming the terminal portion of the black wiring 6 described later, alkali resistance is also required.

此外,鉻具有抗鹼性,可適用作為黑色配線6的金屬層2。但鉻的電阻值大,在製造步驟中所產生的鉻離子是有害的,所以難以適用於實際的生產。在低電阻值的觀點上,較理想是以銅、銅合金作為金屬層2。由於銅、銅合金的導電性良好,所以作為金屬層2是理想的。 In addition, chromium has alkali resistance, and can be suitably used as the metal layer 2 of the black wiring 6. However, the resistance value of chromium is large, and the chromium ions generated in the manufacturing steps are harmful, so it is difficult to apply it to actual production. From the viewpoint of a low resistance value, it is preferable to use copper or a copper alloy as the metal layer 2. Since copper and a copper alloy have good electrical conductivity, they are preferable as the metal layer 2.

金屬層2可以銅合金的形式含有3at%以下的合金元素。合金元素,係可由例如鎂、鈣、鈦、鉬、銦、錫、鋅、鋁、鈹、鎳選擇一個以上的元素。藉由銅的合金化,可抑制銅的擴散,以銅合金的形式可改善耐熱性等。若將超過3at%的合金元素添加於金屬層2,黑色配線6的電阻值會變大。當黑色配線6的電阻值變高時,會有產生關於觸控檢測之驅動電壓的波形鈍化或訊號延遲的可能性,所以並不理想。銅容易引起遷移(migration),在可靠性方面並不充分,然而,藉由添加0.1at%以上的上述合金元素作成銅合金,可提升可靠性。含合金元素的比例係可相對於銅設為0.1at%以上3at%以下。 The metal layer 2 may contain an alloy element of 3 at% or less in the form of a copper alloy. The alloy element may be one or more elements selected from magnesium, calcium, titanium, molybdenum, indium, tin, zinc, aluminum, beryllium, and nickel. By alloying copper, copper diffusion can be suppressed, and heat resistance can be improved in the form of a copper alloy. If an alloying element of more than 3 at% is added to the metal layer 2, the resistance value of the black wiring 6 will increase. When the resistance value of the black wiring 6 becomes high, there is a possibility that the waveform of the driving voltage for touch detection may be dulled or the signal may be delayed, which is not desirable. Copper is liable to cause migration and is not sufficient in terms of reliability. However, by adding the above-mentioned alloying elements of at least 0.1 at% to make a copper alloy, reliability can be improved. The alloying element-containing ratio can be set to 0.1 at% or more and 3 at% or less with respect to copper.

(導電性金屬氧化物層) (Conductive metal oxide layer)

第1導電性金屬氧化物層1係以例如含銦的導電性金屬氧化物形成。第2導電性金屬氧化物層3係為例如氧化銦和氧化鋅和氧化錫的混合氧化物(複合氧化物)。 The first conductive metal oxide layer 1 is formed of a conductive metal oxide containing indium, for example. The second conductive metal oxide layer 3 is, for example, a mixed oxide (composite oxide) of indium oxide, zinc oxide, and tin oxide.

第1導電性金屬氧化物層1及第2導電性金屬氧化物層3主要係具有提升透明基板15和黑色配線6的密接性、提升金屬層2和黑色層4的密接性、以及金屬層2產生擦傷時防止斷線之功能。 The first conductive metal oxide layer 1 and the second conductive metal oxide layer 3 mainly include improving the adhesion between the transparent substrate 15 and the black wiring 6, improving the adhesion between the metal layer 2 and the black layer 4, and the metal layer 2 Function to prevent disconnection when abrasion occurs.

銅、銅合金或此等的氧化物、氮化物,與屬於玻璃等透明基板或黑色色材的分散體之黑色層4的密接性,一般來說是不佳的。因此,在未設置導電性金屬氧化物層的情況,會有在金屬層2和透明基板15的界面、及金屬層2和黑色層4的界面產生剝離的可能性。將銅或銅合金作為觸控感測用途的金屬配線(將金屬層形成圖案作為細配線者)使用時,沒有將第1的導電氧化物層1形成作為基底層的顯示裝置基板,除了因剝離所致之不良外,也會有在金屬配線產生因靜電破壞所致之不良之情況,並不實用。此靜電破壞,是因為在彩色濾光片積層等的後續步驟或者與陣列基板的貼合、洗淨步驟等中,於配線圖案儲存靜電,因靜電破壞產生圖案欠缺、斷線等的現象。 The adhesion of copper, copper alloys, or these oxides and nitrides to the black layer 4 belonging to a transparent substrate such as glass or a dispersion of a black color material is generally poor. Therefore, when the conductive metal oxide layer is not provided, there is a possibility that peeling may occur at the interface between the metal layer 2 and the transparent substrate 15 and the interface between the metal layer 2 and the black layer 4. When copper or a copper alloy is used as a metal wiring for touch sensing (when a metal layer is patterned as a thin wiring), the first conductive oxide layer 1 is not formed as a base layer of a display device substrate, except for peeling In addition to the defects caused, there are also cases where defects caused by electrostatic damage occur in metal wiring, which is not practical. This electrostatic damage is because static electricity is stored in the wiring pattern in the subsequent steps such as color filter lamination, or bonding and cleaning steps with the array substrate, and the phenomenon of pattern shortage, disconnection, etc. occurs due to the electrostatic damage.

此外,銅、銅合金或此等的氧化物、氮化物,通常電性連接不穩定且欠缺可靠性。例如,隨時間經過形成於銅表面的氧化銅或硫化銅接近絕緣體,在電性安裝上會產生問題。在設置於黑色配線6端部的端子部5(圖3所示)中,容易因重新進行電性安裝或處理時的不良情況而在金屬層2產生擦傷。由於含銦的導電性金屬氧化物也有硬的陶瓷,所以即便在金屬層產生擦傷,導電性金屬氧化物層斷線的情況很少。 In addition, copper, copper alloys, or oxides and nitrides thereof are generally unstable in electrical connection and lack reliability. For example, copper oxide or copper sulfide formed on a copper surface approaches an insulator over time, which causes problems in electrical installation. In the terminal portion 5 (shown in FIG. 3) provided at the end portion of the black wiring 6, scratches are likely to occur on the metal layer 2 due to a defect in the electrical installation or processing. Since indium-containing conductive metal oxides also have hard ceramics, even if abrasion occurs in the metal layer, the conductive metal oxide layer is rarely disconnected.

又,第2導電性金屬氧化物層3係具有因上述之銅或銅合金的表面之隨時間變化(銅氧化物的形成)所致之電性接觸不良的改善功能。就端子部5的表面而言,由於例如以氧化銦和氧化鋅和氧化錫的混合氧化物形成的第2導電性金屬氧化物層3會露出,所以端子部5的接觸電阻變低,適合於電性安裝。 In addition, the second conductive metal oxide layer 3 has a function of improving the electrical contact failure caused by the time-dependent change of the surface of the copper or copper alloy (formation of copper oxide). On the surface of the terminal portion 5, since the second conductive metal oxide layer 3 formed of, for example, a mixed oxide of indium oxide and zinc oxide and tin oxide is exposed, the contact resistance of the terminal portion 5 is low, which is suitable for Electrical installation.

又,藉由將形成第2導電性金屬氧化物層3之混合氧化物中的氧化銦,以銦和錫和鋅的原子比設成0.8以上,可降低作為配線的電阻值。此外,銦的原子比係以設成0.9以上更佳。 Further, by setting the indium oxide in the mixed oxide forming the second conductive metal oxide layer 3 to an atomic ratio of indium, tin, and zinc to 0.8 or more, the resistance value as a wiring can be reduced. The atomic ratio of indium is more preferably set to 0.9 or more.

第1導電性金屬氧化物層1和第2導電性金屬氧化物層3的每一者,作為氧化物,係可成膜作為氧稍微不足之具有光吸收特性的膜。 Each of the first conductive metal oxide layer 1 and the second conductive metal oxide layer 3 can be used as an oxide to form a film having a light absorption characteristic that is slightly deficient in oxygen.

再者,形成第1導電性金屬氧化物層1和第2導電性金屬氧化物層3之混合氧化物中的氧化鋅和氧化錫的量,較佳為以銦的原子比為0.01以上且小於0.08的範圍內。 The amount of zinc oxide and tin oxide in the mixed oxide forming the first conductive metal oxide layer 1 and the second conductive metal oxide layer 3 is preferably such that the atomic ratio of indium is 0.01 or more and less than In the range of 0.08.

錫的混合氧化物中的量,若沒有添加以原子比超過0.01的量,將無法獲得導電性金屬氧化物層的低電阻。錫的混合氧化物中的量,若以原子比超過0.08時,則蝕刻難以進入導電性金屬氧化物層,結果,會有在後述的製造方法中金屬層2的圖案形成變困難之可能性。 If the amount of tin in the mixed oxide is not added in an amount exceeding 0.01, the low resistance of the conductive metal oxide layer cannot be obtained. When the amount of the mixed oxide of tin exceeds 0.08 in an atomic ratio, it becomes difficult to etch into the conductive metal oxide layer, and as a result, pattern formation of the metal layer 2 may be difficult in a manufacturing method described later.

再者,鋅的混合氧化物中的量較佳為,以銦的原子比為0.02以上且小於0.2的範圍內。若鋅的原子比超過0.2且錫的原子比小於0.01時,將難以形成作為 黑色配線之「等線寬」的圖案。當氧化鋅的量增加時,在溼蝕刻步驟中,以此混合氧化物形成的層會選擇性地被蝕刻,使得金屬層的線寬相對地變大。反之,當氧化錫的量增加時,在溼蝕刻步驟中,金屬層會選擇性地被蝕刻,使得導電性金屬氧化物層的線寬相對地便大。當氧化錫的量過多時,蝕刻不會進入導電性金屬氧化物層。鋅的混合氧化物中的量較佳為,以銦的原子比為0.02以上0.13以下的範圍內。 The amount of zinc in the mixed oxide is preferably in a range of an atomic ratio of indium of 0.02 or more and less than 0.2. If the atomic ratio of zinc exceeds 0.2 and the atomic ratio of tin is less than 0.01, it will be difficult to form as "Equivalent line width" pattern for black wiring. When the amount of zinc oxide is increased, in the wet etching step, the layer formed by the mixed oxide is selectively etched, so that the line width of the metal layer becomes relatively large. Conversely, when the amount of tin oxide is increased, the metal layer is selectively etched during the wet etching step, so that the line width of the conductive metal oxide layer is relatively large. When the amount of tin oxide is excessive, etching does not enter the conductive metal oxide layer. The amount of zinc in the mixed oxide is preferably within a range of 0.02 or more and 0.13 or less.

亦即,以包含於混合氧化物的銦(In)和鋅(Zn)和(Sn)的In/(In+Zn+Sn)所示之原子比大於0.8,且Zn/Sn的原子比大於1者,是可再現「等線寬」的黑色配線之條件。 That is, the atomic ratio shown by In / (In + Zn + Sn) of indium (In) and zinc (Zn) and (Sn) contained in the mixed oxide is greater than 0.8, and the atomic ratio of Zn / Sn is greater than 1 This is a condition that can reproduce "equal line width" black wiring.

接著,參照圖式,說明關於包含本實施形態之顯示裝置基板的顯示裝置。 Next, a display device including a display device substrate of this embodiment will be described with reference to the drawings.

圖3係關於本實施形態之顯示裝置基板的示意俯視圖,表示將此等像素區分成紅像素R、綠像素G、藍像素B等的像素,且配設於長邊方向之黑色配線6的一例之圖。 FIG. 3 is a schematic plan view of a display device substrate according to this embodiment, and shows an example of the black wirings 6 which are divided into pixels such as red pixels R, green pixels G, and blue pixels B, and are arranged in the longitudinal direction. Figure.

圖3係從觀察者方向V觀看後續說明之圖6的顯示裝置之矩形顯示區域19的俯視圖。此外,本實施態樣的顯示裝置基板係不含彩色濾光片層之構成。圖3所示的R、G、B記號,係為了顯示像素位置而表記者,亦可為省略了彩色濾光片之構成。 FIG. 3 is a plan view of the rectangular display area 19 of the display device of FIG. 6 as viewed from the viewer's direction V. In addition, the display device substrate according to this embodiment has a configuration that does not include a color filter layer. The R, G, and B symbols shown in FIG. 3 are used to indicate the position of a pixel, and may be a structure in which a color filter is omitted.

使用本實施形態的顯示裝置基板之顯示裝置或液晶顯示裝置,係具備進行影像顯示和觸控感測之每 一者的控制之控制部(未圖示)。在以下的記載中,觸控感測係以下述為前提:例如以延伸於第1方向之複數條配線的排列、與和此等配線保持既定或一定的間隔(絕緣)而配置且延伸於與第1方向正交的第2方向之複數條配線的排列之各配線的交叉部所產生之靜電電容的變化,來判斷手指等指示器有無觸控之靜電電容方式。圖3中,顯示矩形顯示區域19及其周圍的區域之黑色配線6及金屬配線42(以下,將此金屬配線以進行觸控感測時所使用之其中一電極的意思,稱為觸控金屬配線42)的配置位置。由黑色配線6和觸控金屬配線42所包圍的區域成為像素開口區域。圖3中,例如將黑色配線6設為延伸於第1方向(Y方向)的配線,且將其正交的觸控金屬配線42設為第2方向(X方向)的配線。如圖3所示,在平面視圖中,黑色配線6係將複數條配線的排列以一定的間隔設置於第2方向(X方向)。觸控金屬配線42係在平面視圖中將複數條配線的排列設置於第1方向(Y方向)。 A display device or a liquid crystal display device using the display device substrate of this embodiment is provided with each of image display and touch sensing. A control unit (not shown) for one of the controls. In the following description, the touch sensing system is based on the premise that, for example, an arrangement of a plurality of wirings extending in the first direction and a predetermined or constant interval (insulation) with these wirings are arranged and extended between and The capacitance change at the intersection of the wirings of the array of the plurality of wirings in the second direction orthogonal to the first direction is to determine whether there is an electrostatic capacitance method in which a pointer such as a finger touches. In FIG. 3, the black wiring 6 and the metal wiring 42 (hereinafter referred to as one of the electrodes used for touch sensing when the metal wiring is used to display the rectangular display area 19 and the surrounding area are referred to as a touch metal. The arrangement position of the wiring 42). The area surrounded by the black wiring 6 and the touch metal wiring 42 becomes a pixel opening area. In FIG. 3, for example, the black wiring 6 is a wiring extending in the first direction (Y direction), and the orthogonal touch metal wiring 42 is a wiring in the second direction (X direction). As shown in FIG. 3, in a plan view, the black wiring 6 is arranged in a second direction (X direction) with a plurality of wirings arranged at regular intervals. The touch metal wiring 42 is an arrangement in which a plurality of wirings are arranged in a first direction (Y direction) in a plan view.

黑色配線6係在Y方向彼此大致平行地延伸而配設。黑色配線6具有:引繞配線(第1配線)6a,係從矩形顯示區域19的一端延伸至另一端之外;和虛擬配線(第2配線)6b,係從矩形顯示區域19的一端延伸至另一端。本實施形態中,在引繞配線6a之間設有2條虛擬配線6b。虛擬配線6b係作成電性浮動的形狀(浮動圖案(floating pattern))。引繞配線6a的疏化數(引繞配線6a間的虛擬配線6b的條數)、或引繞配線6a的條數和虛擬配線6b的條數之比,應配合顯示裝置的使用目的等而適當設定。 The black wirings 6 are arranged so as to extend substantially parallel to each other in the Y direction. The black wiring 6 includes a lead wiring (first wiring) 6a extending from one end of the rectangular display area 19 to the other end, and a dummy wiring (second wiring) 6b extending from one end of the rectangular display area 19 to another side. In this embodiment, two dummy wirings 6b are provided between the lead wirings 6a. The dummy wiring 6b is formed in an electrically floating shape (floating pattern). The thinning number of the lead wires 6a (the number of the virtual wires 6b between the lead wires 6a), or the ratio of the number of the lead wires 6a to the number of the virtual wires 6b, should be matched with the purpose of the display device, etc. Set appropriately.

此外,施加觸控感測的驅動電壓之驅動電極的角色,亦可為黑色配線6和觸控金屬配線42的任一者,其角色可替換。 In addition, the role of the driving electrode to which the driving voltage of the touch sensing is applied may be any of the black wiring 6 and the touch metal wiring 42, and the role may be replaced.

觸控金屬配線42係在平面視圖中與黑色配線6正交而配置。觸控金屬配線42係設置於後述的陣列基板,從矩形顯示區域19的一端延伸至另一端的外面。 The touch metal wiring 42 is arranged orthogonal to the black wiring 6 in a plan view. The touch metal wiring 42 is provided on an array substrate described later, and extends from one end of the rectangular display region 19 to the outside of the other end.

此外,在顯示裝置基板設置彩色濾光片層時,係以例如在Y方向顯示相同顏色的像素排列,且在X方向顯示彼此不同顏色的像素相鄰之方式,形成彩色濾光片層。 In addition, when the color filter layer is provided on the display device substrate, the color filter layer is formed in such a manner that pixels of the same color are displayed in the Y direction and pixels of different colors are displayed in the X direction.

又,即便沒有在顯示裝置基板設置彩色濾光片層時,也可例如使背光單元具備紅色發光、綠色發光、藍色發光的LED,且藉由各自的分時發光和與其同步的液晶層的驅動來進行彩色顯示。使用分時發光的背光單元時,係如圖3所示構成為例如在Y方向顯示相同顏色的像素排列,且在X方向顯示彼此不同顏色的像素相鄰。 In addition, even when a color filter layer is not provided on the display device substrate, the backlight unit can be provided with red, green, and blue LEDs, for example, and each time-division light emission and the synchronization of the liquid crystal layer Driven for color display. When a time-division backlight unit is used, for example, as shown in FIG. 3, a pixel arrangement is displayed in which the same color is displayed in the Y direction, and pixels of different colors are displayed adjacent to each other in the X direction.

圖4為說明一實施形態的顯示裝置基板中之黑色配線的端子部的一例之示意俯視圖。 4 is a schematic plan view illustrating an example of a terminal portion of a black wiring in a display device substrate according to an embodiment.

圖5為一實施形態的顯示裝置基板中之黑色配線的端子部的線A-A’之部分剖面圖。 Fig. 5 is a partial cross-sectional view of a line A-A 'of a terminal portion of a black wiring in a display device substrate according to an embodiment.

矩形顯示區域19和其周邊的一部分,係由透明樹脂層9所覆蓋。在黑色配線6延伸到矩形顯示區域19之外的一端,形成有端子部5。 The rectangular display area 19 and a part of its periphery are covered by the transparent resin layer 9. A terminal portion 5 is formed at one end of the black wiring 6 extending beyond the rectangular display area 19.

如圖5所示,端子部5係構成為在其表面露出第2導電性金屬氧化物層3,且能進行電性接觸或安 裝之態樣。第2導電性金屬氧化物層3的表面,係與銅或銅合金表面不同,形成新的氧化物而不會帶來電性的接觸不良。銅或銅合金的表面容易隨著時間經過而形成氧化物或硫化物。以混合氧化物形成的第2導電性金屬氧化層即便隨時間經過也穩定,可進行以電性安裝的歐姆接觸。 As shown in FIG. 5, the terminal portion 5 is configured such that the second conductive metal oxide layer 3 is exposed on the surface, and can be electrically contacted or mounted. Appearance. The surface of the second conductive metal oxide layer 3 is different from the surface of copper or a copper alloy, and a new oxide is formed without causing electrical contact failure. The surface of copper or copper alloys tends to form oxides or sulfides over time. The second conductive metal oxide layer formed of a mixed oxide is stable even with the passage of time, and can be subjected to ohmic contact for electrical mounting.

此外,端子部5的平面視圖的形狀並不限定於圖4。例如,亦可為以透明樹脂層9覆蓋端子部5上之後,利用乾蝕刻等手段將端子部5上部去除成圓形、矩形,以使端子部5表面的第2導電性金屬氧化物層3露出。於此情況,在將顯示裝置的基板彼此黏貼的密封部中,也可於密封部的厚度方向進行從顯示裝置基板至陣列基板之導通的轉移(transfer)。此導通的轉移,係可藉由將選自各向異性導電膜、微小的金屬球、或以金屬膜覆蓋的樹脂球等的導體配置於密封部。 The shape of the terminal portion 5 in a plan view is not limited to FIG. 4. For example, after the terminal portion 5 is covered with the transparent resin layer 9, the upper portion of the terminal portion 5 is removed into a circle or a rectangle by means such as dry etching, so as to make the second conductive metal oxide layer 3 on the surface of the terminal portion 5. Exposed. In this case, in the sealing portion where the substrates of the display device are adhered to each other, the transfer from the display device substrate to the array substrate may be performed in the thickness direction of the sealing portion. This conduction transfer can be performed by disposing a conductor selected from an anisotropic conductive film, a fine metal ball, or a resin ball covered with a metal film in the sealing portion.

圖6為本發明的一實施形態之顯示裝置的部分剖面圖。 FIG. 6 is a partial cross-sectional view of a display device according to an embodiment of the present invention.

圖6亦為將圖7的陣列基板35和顯示裝置基板100於經由液晶層30相對向的狀態下黏貼時之D-D’方向的剖面圖。此外,在D-D’剖面中,並未細緻地顯示出觸控金屬配線42的圖,在圖6中,以在紙面裏側有觸控金屬配線42的構成而言,係以虛線顯示出其位置。又,圖6中,省略了與偏光板、相位差板、配向膜、背光單元、電晶體之主動元件相關之閘極線或源極線等的圖示。 FIG. 6 is also a cross-sectional view in the D-D 'direction when the array substrate 35 and the display device substrate 100 of FIG. 7 are adhered to each other through the liquid crystal layer 30 facing each other. In addition, in the DD ′ cross section, the figure of the touch metal wiring 42 is not shown in detail. In FIG. 6, for the configuration in which the touch metal wiring 42 is provided on the back side of the paper, it is shown in dotted lines. position. In FIG. 6, illustrations of gate lines, source lines, and the like related to the active elements of the polarizing plate, the retardation plate, the alignment film, the backlight unit, and the transistor are omitted.

本實施形態的顯示裝置具備有顯示裝置基板100、陣列基板35和液晶層30。本實施形態的顯示裝置為例如FFS模式的液晶顯示裝置。 The display device of this embodiment includes a display device substrate 100, an array substrate 35, and a liquid crystal layer 30. The display device according to this embodiment is, for example, a liquid crystal display device in the FFS mode.

陣列基板35具有:透明基板25;絕緣層21、22、23;共同電極32;像素電極36;和觸控金屬配線42。 The array substrate 35 includes: a transparent substrate 25; insulating layers 21, 22, and 23; a common electrode 32; a pixel electrode 36; and a touch metal wiring 42.

透明基板25係以使用例如熱膨脹率小的無鹼玻璃較理想。 The transparent substrate 25 is preferably made of, for example, an alkali-free glass having a small thermal expansion coefficient.

透明基板25的基材為例如熱膨脹率小的無鹼玻璃,以使用玻璃材質的基板較理想。本實施形態中,採用作為透明基板15、25的基材之無鹼玻璃為顯示裝置用的基板材料,以實質上不含鹼成分的鋁矽酸鹽玻璃為代表。 The base material of the transparent substrate 25 is, for example, an alkali-free glass having a small thermal expansion coefficient, and a glass substrate is preferably used. In this embodiment, an alkali-free glass used as a base material of the transparent substrates 15 and 25 is used as a substrate material for a display device, and an aluminosilicate glass which does not substantially contain an alkali component is representative.

在透明基板25上,隔著絕緣層21、22配置有共同電極32。共同電極32係配置成例如在Y方向延伸的條狀,且相互電性連接。共同電極32係藉由例如ITO、IZO等透明導電材料所形成。 A common electrode 32 is disposed on the transparent substrate 25 via the insulating layers 21 and 22. The common electrode 32 is arranged in a strip shape extending in the Y direction, for example, and is electrically connected to each other. The common electrode 32 is formed of a transparent conductive material such as ITO or IZO.

在共同電極32上,經由絕緣層23配置有像素電極36及觸控金屬配線42。像素電極36係藉由例如ITO、IZO等透明導電材料所形成。 A pixel electrode 36 and a touch metal wiring 42 are arranged on the common electrode 32 via the insulating layer 23. The pixel electrode 36 is formed of a transparent conductive material such as ITO or IZO.

液晶層30的液晶包含與陣列基板35的基板面呈大致水平配向的液晶分子。液晶的驅動係以產生於像素電極36和共同電極32之間的邊緣電場驅動。此液晶驅動方式稱為FFS(fringe field switching)或IPS(in plane switching)。用以驅動液晶層30的驅動電壓,係形 成與陣列基板35的基板面大致平行之方向的電場、即所謂的橫電場。 The liquid crystal of the liquid crystal layer 30 includes liquid crystal molecules aligned substantially horizontally with the substrate surface of the array substrate 35. The driving system of the liquid crystal is driven by a fringe electric field generated between the pixel electrode 36 and the common electrode 32. This liquid crystal driving method is called FFS (fringe field switching) or IPS (in plane switching). Driving voltage for driving the liquid crystal layer 30 An electric field in a direction substantially parallel to the substrate surface of the array substrate 35 is a so-called transverse electric field.

圖7為圖6所示之陣列基板35的俯視圖,顯示觸控金屬配線42和遮光圖案位置之圖。圖7為從觀察者方向V觀看圖6所示的陣列基板35的平面視圖。 FIG. 7 is a plan view of the array substrate 35 shown in FIG. 6, showing a position of the touch metal wiring 42 and a light shielding pattern. FIG. 7 is a plan view of the array substrate 35 shown in FIG. 6 as viewed from the viewer's direction V. FIG.

圖7中顯示了觸控金屬配線42和遮光圖案43的位置。陣列基板35進一步具備:配置在與像素電極36及觸控金屬配線42同層的遮光圖案43;源極線40;閘極線41;和電晶體(主動元件)46。 The positions of the touch metal wiring 42 and the light shielding pattern 43 are shown in FIG. 7. The array substrate 35 further includes a light shielding pattern 43 disposed on the same layer as the pixel electrode 36 and the touch metal wiring 42, a source line 40, a gate line 41, and a transistor (active element) 46.

於各像素配置有像素電極36。像素電極36具備有例如延伸於Y方向之複數個帶狀圖案。換言之,像素電極36具有設置在與共同電極32相對向之位置的縫隙(slit)。複數個帶狀圖案係藉由遮光圖案43相互電性連接。 A pixel electrode 36 is arranged on each pixel. The pixel electrode 36 includes, for example, a plurality of stripe patterns extending in the Y direction. In other words, the pixel electrode 36 has a slit provided at a position facing the common electrode 32. The plurality of stripe patterns are electrically connected to each other through the light shielding pattern 43.

源極線40係配置成在像素電極36間延伸於Y方向。源極線40係與未圖示的驅動電路電性連接。對源極線40,施加影像訊號。驅動電路包含於未圖示的前述控制部,此控制部係控制與影像顯示相關的影像訊號和閘極訊號、以及與後述的觸控感測相關的驅動訊號和觸控檢測訊號。 The source line 40 is arranged so as to extend in the Y direction between the pixel electrodes 36. The source line 40 is electrically connected to a driving circuit (not shown). An image signal is applied to the source line 40. The driving circuit is included in the aforementioned control section (not shown). This control section controls the image signal and gate signal related to image display, and the driving signal and touch detection signal related to touch sensing described later.

閘極線41係配置成在像素電極36間延伸於X方向。閘極線41係與未圖示的驅動電路電性連接。對閘極線41,施加後述之電晶體的閘極訊號。 The gate lines 41 are arranged so as to extend in the X direction between the pixel electrodes 36. The gate line 41 is electrically connected to a driving circuit (not shown). A gate signal of a transistor described later is applied to the gate line 41.

觸控金屬配線42係隔著絕緣層21、22、23配置於閘極線41的上層。觸控金屬配線42係與閘極線 41及源極線40在電性上獨立。亦即,觸控金屬配線42係在像素電極36間延伸於X方向而配置。觸控金屬配線係與未圖示的驅動電路電性連接。進行觸控感測時,係對觸控金屬配線42施加例如一定電壓、或施加既定的脈衝(pulse)電壓。 The touch metal wiring 42 is disposed on the gate line 41 via the insulating layers 21, 22, and 23. Touch metal wiring 42 series and gate line 41 and the source line 40 are electrically independent. That is, the touch metal wiring 42 is arranged between the pixel electrodes 36 in the X direction. The touch metal wiring is electrically connected to a driving circuit (not shown). When touch sensing is performed, for example, a predetermined voltage or a predetermined pulse voltage is applied to the touch metal wiring 42.

此外,陣列基板35的閘極線41或源極線40等的金屬配線、和觸控金屬配線42亦可以相同的金屬材料、構成,且相同的步驟形成。於此情況,以相同步驟形成的金屬配線和觸控金屬配線42係在電性上獨立。 In addition, the metal wiring such as the gate line 41 or the source line 40 of the array substrate 35 and the touch metal wiring 42 may also be formed with the same metal material and structure and in the same steps. In this case, the metal wiring and the touch metal wiring 42 formed by the same steps are electrically independent.

黑色配線6和觸控金屬配線42(或閘極線41),係可作為為了提升顯示的對比(contrast)而多用於顯示裝置之黑色矩陣的替代使用。由於任一者皆可用金屬配線形成,所以來自未圖示之背光單元之光的遮光性高。 The black wiring 6 and the touch metal wiring 42 (or the gate line 41) can be used as an alternative to the black matrix of the display device in order to improve the contrast of the display. Since any of them can be formed of metal wiring, light from a backlight unit (not shown) has high light shielding properties.

遮光圖案43係配置於各像素。遮光圖案43係配置在與觸控金屬配線42同層,且在同一步驟形成。遮光圖案43可為積層有複數層的金屬層,也可在遮光圖案43上進一步積層反射防止膜或光吸收層。 The light-shielding pattern 43 is arranged in each pixel. The light shielding pattern 43 is disposed on the same layer as the touch metal wiring 42 and is formed in the same step. The light-shielding pattern 43 may be a metal layer in which a plurality of layers are laminated, or a reflection preventing film or a light-absorbing layer may be further laminated on the light-shielding pattern 43.

遮光圖案43係形成於後述之主動元件的通道層49上,用以防止光朝通道層49射入。藉此構成,可防止電晶體46的錯誤作動。 The light-shielding pattern 43 is formed on the channel layer 49 of an active device described later to prevent light from entering the channel layer 49. With this configuration, erroneous operation of the transistor 46 can be prevented.

圖8為顯示圖7所示陣列基板的線C-C’之剖面的一例之圖。 Fig. 8 is a diagram showing an example of a cross section of a line C-C 'of the array substrate shown in Fig. 7.

圖8係表示具有以氧化物半導體(In-Ga-Zn-O系的混合氧化物)形成之通道層49的電晶體46的構成, 作為本實施形態的顯示裝置的主動元件。電晶體46為薄膜電晶體。顯示了與此電晶體46電性連接的金屬配線(閘極線41及源極線40),以及在閘極線41上隔著複數層的絕緣層21、22、23而與閘極線平行配置之觸控金屬配線42等。 FIG. 8 shows the structure of a transistor 46 having a channel layer 49 formed of an oxide semiconductor (In-Ga-Zn-O-based mixed oxide). As an active element of the display device of this embodiment. The transistor 46 is a thin film transistor. The metal wiring (gate line 41 and source line 40) electrically connected to this transistor 46 is shown, and the gate line 41 is parallel to the gate line via a plurality of insulating layers 21, 22, and 23 Disposed touch metal wiring 42 and the like.

此外,圖8並未限定包含於陣列基板35之絕緣層的層數。又,圖示的電晶體46為底閘極(bottom gate)構造,惟採用於本實施形態的顯示裝置的主動元件並沒有限定為底閘極構造的電晶體。 In addition, FIG. 8 does not limit the number of layers of the insulating layer included in the array substrate 35. The transistor 46 shown in the figure has a bottom gate structure, but the active element used in the display device of this embodiment is not limited to a transistor with a bottom gate structure.

電晶體46具備有閘極電極GE、源極電極SE、汲極電極DE和通道層49。 The transistor 46 includes a gate electrode GE, a source electrode SE, a drain electrode DE, and a channel layer 49.

閘極電極GE係形成於透明基板25上。閘極電極GE係配置在與閘極線41同層,且與對應的閘極線41電性連接(或形成一體)。閘極電極GE被絕緣層21所覆蓋。 The gate electrode GE is formed on the transparent substrate 25. The gate electrode GE is disposed on the same layer as the gate line 41 and is electrically connected (or integrated) with the corresponding gate line 41. The gate electrode GE is covered with an insulating layer 21.

源極電極SE係配置於絕緣層21上的通道層49上。源極電極SE係配置在與源極線40同層,且與對應的源極線40電性連接(或形成一體)。源極電極SE係被絕緣層22所覆蓋。 The source electrode SE is disposed on the channel layer 49 on the insulating layer 21. The source electrode SE is disposed on the same layer as the source line 40 and is electrically connected (or integrated) with the corresponding source line 40. The source electrode SE is covered with an insulating layer 22.

汲極電極DE係配置在絕緣層21上的通道層49上。汲極電極DE係配置在與源極線40及源極電極SE同層,且經由貫通絕緣層22、23的接觸孔47,而與像素電極36電性連接。 The drain electrode DE is disposed on the channel layer 49 on the insulating layer 21. The drain electrode DE is disposed on the same layer as the source line 40 and the source electrode SE, and is electrically connected to the pixel electrode 36 through a contact hole 47 penetrating the insulating layers 22 and 23.

通道層49係在絕緣層21上,配置在與閘極電極GE相對向的位置。通道層49係可以多晶矽等矽系半導體、或氧化物半導體形成。 The channel layer 49 is located on the insulating layer 21 and is disposed at a position facing the gate electrode GE. The channel layer 49 can be formed of a silicon-based semiconductor such as polycrystalline silicon or an oxide semiconductor.

電晶體46較佳為通道層49是包含被稱為IGZO等之鎵,銦、鋅、錫、鍺、鎂、鋁中的2種以上的金屬氧化物之氧化物半導體。此種電晶體46由於記憶性高(漏電流少),所以容易保持液晶驅動電壓施加後的像素電容。因此,可作成省略顯示裝置的保持電容線(或各像素所具備的保持電容)之構成。 The transistor 46 is preferably an oxide semiconductor containing two or more metal oxides such as gallium called IGZO, indium, zinc, tin, germanium, magnesium, and aluminum. Since such a transistor 46 has high memory (less leakage current), it is easy to maintain the pixel capacitance after the liquid crystal driving voltage is applied. Therefore, a configuration in which the storage capacitor line (or the storage capacitor provided in each pixel) of the display device is omitted can be made.

例如,在後述之點反轉驅動的情況,若採用通道層49使用記憶性良好的IGZO而成的電晶體(主動元件)時,則亦可省略將透明電極圖案設成一定的電壓(恆電位)時之定電壓驅動所需要的保持電容(儲存電容器:storage capacitor)。以IGZO作為通道層的電晶體,係與使用了矽半導體的電晶體不同,漏電流極小,所以可省略例如包含記載於先前技術文獻的專利文獻4之閂鎖(latch)部的轉移電路,可設成單純的配線構造。又,使用具備了以下構成的電晶體之陣列基板的液晶顯示裝置,由於電晶體的漏電流小,所以可保持液晶驅動電壓施加後的電壓,且可維持其透過率,該電晶體係使用了IGZO等氧化物半導體作為通道層。 For example, in the case of the point-reversal driving described later, if a transistor (active device) made of IGZO with good memory is used for the channel layer 49, the transparent electrode pattern may be omitted to set a constant voltage (constant potential). The storage capacitor (storage capacitor) required for constant voltage driving at). The transistor using IGZO as a channel layer is different from a transistor using a silicon semiconductor in that the leakage current is extremely small. Therefore, for example, a transfer circuit including a latch portion described in Patent Document 4 of the prior art document can be omitted. It has a simple wiring structure. In addition, a liquid crystal display device using an array substrate including a transistor having the following configuration has a small leakage current of the transistor, so that the voltage after the liquid crystal driving voltage is applied and the transmittance can be maintained. This transistor system is used An oxide semiconductor such as IGZO is used as a channel layer.

通道層49使用IGZO等氧化物半導體之情況,電晶體46的電子移動度高,例如可以2msec(毫秒)以下的短時間將與所需要的影像訊號對應的驅動電壓施加於像素電極36。例如,倍速驅動(1秒間的顯示場景數為120幀的情況)的1幀為約8.3msec,例如可將6msec分配到觸控感測。 When an oxide semiconductor such as IGZO is used for the channel layer 49, the electron mobility of the transistor 46 is high. For example, a driving voltage corresponding to a required image signal can be applied to the pixel electrode 36 in a short time of 2 msec (msec) or less. For example, one frame of the double-speed drive (when the number of display scenes in one second is 120 frames) is about 8.3 msec. For example, 6 msec can be allocated to touch sensing.

當屬於透明電極圖案的驅動電極為恆電位時,亦可不將液晶驅動和觸控電極驅動分時驅動。液晶的驅動頻率和觸控金屬配線的驅動頻率係可相異。例如在通道層49是使用IGZO等氧化物半導體的電晶體46中,於液晶驅動電壓施加後,為了保持透過率(或保持電壓),與多晶矽半導體的電晶體不同,不需要透過率保持用之影像的再生(refresh)(再次的影像訊號的寫入)。因此,採用了IGZO等氧化物半導體的顯示裝置,係可進行低電力消耗驅動。 When the driving electrodes belonging to the transparent electrode pattern are constant potential, the liquid crystal driving and the touch electrode driving may not be driven in a time-sharing manner. The driving frequency of the liquid crystal and the driving frequency of the touch metal wiring may be different. For example, in the case where the channel layer 49 is a transistor 46 using an oxide semiconductor such as IGZO, after the liquid crystal driving voltage is applied, in order to maintain the transmittance (or the holding voltage), it is different from the transistor of a polycrystalline silicon semiconductor. Refresh (rewrite of video signal) of video. Therefore, a display device using an oxide semiconductor such as IGZO can be driven with low power consumption.

IGZO等氧化物半導體由於電性的耐壓高,所以可以較高的電壓將液晶高速驅動,有利於可進行3D顯示之3維影像顯示。通道層49使用IGZO等氧化物半導體的薄膜電晶體46,係如上所述記憶性高,故有例如即使將液晶驅動頻率設為0.1Hz以上30Hz以下左右的低頻率,仍不易產生閃爍(flicker)(顯示的閃爍)之優點。使用以IGZO作為通道層的電晶體46,併用低頻率的點反轉驅動及不同於該低頻率之頻率的觸控驅動,藉此,便能夠同時獲得低電力消耗且高畫質的影像顯示以及高精度的觸控感測。 Since oxide semiconductors such as IGZO have high electrical withstand voltage, they can drive liquid crystals at high voltages at high speeds, which is conducive to 3D image display capable of 3D display. As the channel layer 49, a thin film transistor 46 such as an IGZO oxide semiconductor is used, which has a high memory as described above. For example, even if the liquid crystal driving frequency is set to a low frequency of about 0.1 Hz to 30 Hz, flicker is not easy to occur (Display flicker). Using the transistor 46 with IGZO as the channel layer, and using low-frequency dot inversion driving and touch driving with a frequency different from the low-frequency, by this, it is possible to simultaneously obtain low-power consumption and high-quality image display and High-precision touch sensing.

又,通道層49使用氧化物半導體而成的電晶體46,係如上所述由於漏電流少,所以可長時間保持施加於像素電極36的驅動電壓。將主動元件的源極線40、閘極線41(及輔助電容線)等以配線電阻比鋁配線小的銅配線形成,再者,使用可在短時間驅動的IGZO等作為主動元件,藉此,可充分地設置用以進行觸控感測 的掃描用的期間。亦即,藉由將IGZO等氧化物半導體適用於主動元件,可縮短液晶等的驅動時間,在顯示畫面整體的影像信號處理中,適用於觸控感應的時間可具有充分的余裕。藉此構成,可以高精度檢測出所發生之靜電電容的變化。 In addition, the transistor 46 made of an oxide semiconductor is used for the channel layer 49. As described above, since the leakage current is small, the driving voltage applied to the pixel electrode 36 can be maintained for a long time. The source line 40, gate line 41 (and auxiliary capacitor line) of the active device are formed of copper wiring having a wiring resistance smaller than that of aluminum, and IGZO or the like which can be driven in a short time is used as the active device to thereby Can be fully set up for touch sensing Scanning period. That is, by applying an oxide semiconductor such as IGZO to an active device, the driving time of liquid crystals and the like can be shortened, and the time suitable for touch sensing can have sufficient margin in the image signal processing of the entire display screen. With this configuration, it is possible to detect a change in electrostatic capacitance that occurs with high accuracy.

再者,藉由將通道層49設為IGZO等氧化物半導體,便能夠將點反轉驅動或行反轉驅動中之耦合雜訊(coupling noise)的影響大致消除。這是因為使用氧化物半導體的主動元件係能夠以極短的時間(例如2msec)將對應於影像訊號的電壓施加於像素電極36,又,保持該影像訊號施加後的像素電壓的記憶性高,在該保持期間不會有新的雜訊產生,可降低對觸控感測之影響。 Furthermore, by setting the channel layer 49 to an oxide semiconductor such as IGZO, the influence of coupling noise in dot inversion driving or row inversion driving can be substantially eliminated. This is because an active element system using an oxide semiconductor can apply a voltage corresponding to an image signal to the pixel electrode 36 in an extremely short time (for example, 2 msec), and maintains high memory of the pixel voltage after the image signal is applied. No new noise is generated during this hold period, which can reduce the impact on touch sensing.

像素電極36係經由接觸孔47而與汲極電極DE電性連接。像素電極36係配置在與觸控金屬配線42及遮光圖案43同一層。本實施形態中,像素電極36和遮光圖案43係形成一體。換言之,位於像素電極36的通道層49的上層的一部分為遮光圖案43。 The pixel electrode 36 is electrically connected to the drain electrode DE through the contact hole 47. The pixel electrode 36 is disposed on the same layer as the touch metal wiring 42 and the light shielding pattern 43. In this embodiment, the pixel electrode 36 and the light shielding pattern 43 are integrated. In other words, a part of the upper layer of the channel layer 49 located in the pixel electrode 36 is the light shielding pattern 43.

圖9係針對保持在陣列基板35的觸控金屬配線42、和顯示裝置基板100的黑色配線6之間的靜電電容C1進行說明的剖面圖。 FIG. 9 is a cross-sectional view illustrating an electrostatic capacitance C1 held between the touch metal wiring 42 of the array substrate 35 and the black wiring 6 of the display device substrate 100.

在平面視圖中,位在重疊位置的觸控金屬配線42和閘極線41,在圖9中係延伸於相對於紙面垂直的方向(X方向),且相互平行地設置。此外,黑色配線6實際上位於紙面裏側,剖面圖並未顯示,惟為了說明而以虛線表示,示意地顯示形成靜電電容C1之構成。 In a plan view, the touch metal wirings 42 and the gate lines 41 located at overlapping positions extend in a direction (X direction) perpendicular to the paper surface in FIG. 9 and are arranged in parallel with each other. In addition, the black wiring 6 is actually located on the back side of the paper surface, and the cross-sectional view is not shown. However, it is shown by a dotted line for the sake of explanation, and schematically shows the structure for forming the capacitance C1.

在圖6或圖7所示之顯示裝置的構成中,共同電極32的液晶驅動、和觸控感測之觸控金屬配線42的驅動亦可進行分時驅動,或者,亦可不進行分時驅動而是將觸控金屬配線42的驅動以與液晶驅動不同的頻率來驅動。觸控金屬配線42可作為驅動電極或檢測電極使用。 In the configuration of the display device shown in FIG. 6 or FIG. 7, the liquid crystal driving of the common electrode 32 and the driving of the touch-sensitive metal wiring 42 for touch sensing may be performed in time-sharing driving or may not be time-sharing driving. Instead, the touch metal wiring 42 is driven at a different frequency from the liquid crystal drive. The touch metal wiring 42 can be used as a driving electrode or a detection electrode.

與觸控檢測相關的靜電電容C1,係在黑色配線6、和與此黑色配線6在平面視圖中正交的觸控金屬配線42之間形成。藉由此靜電電容C1的變化,可檢測手指等指示器接近或接觸顯示畫面之位置。 The capacitance C1 related to touch detection is formed between the black wiring 6 and the touch metal wiring 42 orthogonal to the black wiring 6 in a plan view. By this change in the electrostatic capacitance C1, it is possible to detect a position where an indicator such as a finger approaches or touches the display screen.

黑色配線6與觸控金屬配線42係如圖3所示大致正交,且分別配設有複數條數。然而,所有的黑色配線6及觸控金屬配線42,為了驅動或檢測亦可不與觸控感測控制器(未圖示)連結。觸控感測控制器係包含於未圖示的前述控制部。 The black wirings 6 and the touch metal wirings 42 are substantially orthogonal as shown in FIG. 3, and a plurality of black wirings 6 are arranged respectively. However, all of the black wiring 6 and the touch metal wiring 42 may not be connected to a touch sensing controller (not shown) for driving or detection. The touch sensing controller is included in the aforementioned control unit (not shown).

例如,如圖3中所說明,黑色配線6亦可具備虛擬配線6b,黑色配線6及觸控金屬配線42的驅動或檢測,也可以每隔3條、每隔9條、每隔18條等既定條數疏化的方式進行。疏化條數比較多者,較可縮短觸控感測掃描時間,較容易進行高速的觸控檢測。 For example, as illustrated in FIG. 3, the black wiring 6 may also be provided with virtual wiring 6b, and the driving or detection of the black wiring 6 and the touch metal wiring 42 may be performed every 3, 9 or 18, etc. The method of thinning the given number of pieces. The larger the number of thinning, the shorter the touch sensing scanning time, and the easier the high-speed touch detection.

接著,說明關於上述本實施形態的顯示裝置基板及顯示裝置中之黑色配線6可發揮的作用。 Next, the functions that the black wiring 6 in the display device substrate and the display device of the present embodiment can play will be described.

如上述,黑色配線6係積層有第1導電性金屬氧化物層1、金屬層2、第2導電性金屬氧化物層3和黑色層4之4層構成的導電性配線。在本實施形態及以 下說明的實施形態中,黑色配線6,係可作為靜電電容方式的觸控感測的觸控電極使用。觸控電極是指,使用於觸控感測之驅動電極及檢測電極的總稱。此外,本發明的記載中,有時將驅動電極、檢測電極分別記載為驅動配線、檢測配線、或者黑色配線、觸控金屬配線、透明導電膜配線。 As described above, the black wiring 6 is a conductive wiring composed of four layers including a first conductive metal oxide layer 1, a metal layer 2, a second conductive metal oxide layer 3, and a black layer 4. In this embodiment and with In the embodiment described below, the black wiring 6 is used as a touch electrode for touch sensing of an electrostatic capacitance method. The touch electrode refers to a general term of a driving electrode and a detection electrode used for touch sensing. In the description of the present invention, the drive electrode and the detection electrode may be described as a drive wiring, a detection wiring, or a black wiring, a touch metal wiring, or a transparent conductive film wiring, respectively.

觸控電極,係可採用例如在平面視圖中將複數個檢測電極排列於第1方向(例如方向X)而配設,且經由在積層方向(方向Z)的絕緣層將複數個驅動電極排列於第2方向(例如Y方向)而配設之構成。在驅動電極,以例如1KHz以上100KHz以下的頻率施加交流脈衝訊號。通常,藉由此交流脈衝訊號的施加,可在檢測電極維持一定的輸出波形。若有手指等指示器接觸或接近時,該部位的檢測電極的輸出波形會出現變化,可判斷有無觸控。手指等指示器至顯示面的距離,係可藉由指示器的接近至接觸的時間(通常為數百μsec以上數msec以下)、在該時間內所計數的輸出脈衝數等測定。 The touch electrodes can be arranged by, for example, arranging a plurality of detection electrodes in a first direction (for example, direction X) in a plan view, and arranging a plurality of driving electrodes on an insulating layer in a lamination direction (direction Z). A configuration arranged in the second direction (for example, the Y direction). An AC pulse signal is applied to the driving electrode at a frequency of, for example, 1 KHz to 100 KHz. Generally, by applying the AC pulse signal, a certain output waveform can be maintained at the detection electrode. If an indicator such as a finger touches or approaches, the output waveform of the detection electrode at that location will change, and it can be determined whether there is touch. The distance from a pointer such as a finger to the display surface can be measured by the time from when the pointer approaches to the contact (usually several hundred μsec or more and several msec or less), and the number of output pulses counted during that time.

黑色配線6係可作為上述的驅動電極或檢測電極使用。作為與黑色配線6成對的觸控電極,係可隔著透明樹脂層9等的絕緣層,設置與黑色配線6延伸的方向(例如Y方向)大致正交之觸控金屬配線42(或透明導電膜配線)。觸控金屬配線42係與黑色配線6成對的觸控電極,配設於陣列基板側。透明導電膜配線係與黑色配線6成對的觸控電極,配設於顯示基板側。在設置觸控金屬配線42(或透明導電膜配線)的構成中,可將此 等配線作為驅動電極或檢測電極使用。在後述的第3實施形態中,將具體地說明具備透明導電膜配線之構成,該透明導電膜配線係以與黑色配線6延伸的方向大致正交的方式延伸。 The black wiring 6 can be used as the above-mentioned drive electrode or detection electrode. As the touch electrode paired with the black wiring 6, a touch metal wiring 42 (or transparent) that is substantially orthogonal to the direction in which the black wiring 6 extends (for example, the Y direction) can be provided through an insulating layer such as the transparent resin layer 9. Conductive film wiring). The touch metal wiring 42 is a touch electrode paired with the black wiring 6 and is disposed on the array substrate side. The transparent conductive film wiring is a touch electrode paired with the black wiring 6, and is disposed on the display substrate side. In the configuration in which the touch metal wiring 42 (or transparent conductive film wiring) is provided, this can be Such wiring is used as a drive electrode or a detection electrode. In a third embodiment described later, a configuration including a transparent conductive film wiring will be described in detail, and the transparent conductive film wiring extends so as to be substantially orthogonal to the direction in which the black wiring 6 extends.

構成黑色配線6的黑色層4與金屬層2的線寬或圖案形狀為相同的情況,係使用黑色層4作為阻劑圖案,將含銦的第2導電性金屬氧化物層3、金屬層2及第1導電性金屬氧化物層1一起進行溼蝕刻,可得到線寬與黑色層4相同之金屬層2的圖案。如此,可將與黑色層4和金屬層2的線寬或圖案形狀相同之黑色配線6,以簡單的步驟製造彩色濾光片基板。此外,藉由上述步驟,構成黑色配線6之第1導電性金屬氧化物層1和金屬層2和第2導電性金屬氧化物層3和黑色層4的線寬係可相等。 When the line width or pattern shape of the black layer 4 and the metal layer 2 constituting the black wiring 6 are the same, the black layer 4 is used as a resist pattern, and the second conductive metal oxide layer 3 and the metal layer 2 containing indium are used. By performing wet etching with the first conductive metal oxide layer 1, a pattern of the metal layer 2 having the same line width as the black layer 4 can be obtained. In this way, the black wiring 6 having the same line width or pattern shape as the black layer 4 and the metal layer 2 can be used to manufacture a color filter substrate in a simple process. In addition, through the above steps, the line widths of the first conductive metal oxide layer 1 and the metal layer 2 and the second conductive metal oxide layer 3 and the black layer 4 constituting the black wiring 6 can be made equal.

由於黑色配線6係以黑色層4覆蓋金屬層2之可視光反射少的構成,所以作成液晶顯示裝置時,來自顯示裝置的背光單元的光不會在金屬層2反射。因此,可防止從陣列基板35側射入之背光源(backlight)的光再射入電晶體46的通道層49,而可防止電晶體46的錯誤作動。 Since the black wiring 6 has a structure in which the visible light reflection of the metal layer 2 is covered with the black layer 4, the light from the backlight unit of the display device is not reflected on the metal layer 2 when the liquid crystal display device is manufactured. Therefore, it is possible to prevent light of a backlight incident from the array substrate 35 side from being incident on the channel layer 49 of the transistor 46, and to prevent erroneous operation of the transistor 46.

如上所述,根據本實施形態,可提供一種具備與屬於無鹼玻璃的基板密接性高的狀態,且能夠降低由背光源等顯示裝置的光源發出之光的再反射之觸控感測用配線之顯示裝置基板,該觸控感測用配線為低電阻且具抗鹼性的黑色配線6。亦即,可提供具備可視性良 好的觸控感測用配線之顯示裝置基板,該觸控感測用配線是在與屬於無鹼玻璃之基板密接性高的狀態。又,根據本實施形態,可提供高解析度且能夠因應高速的觸控輸入之顯示裝置、以及使用於該顯示裝置之顯示裝置基板。又,根據本實施形態,可提供能進行穩定的電性安裝之顯示裝置基板。 As described above, according to this embodiment, it is possible to provide a touch-sensing wiring that has a state of high adhesion to a substrate belonging to an alkali-free glass and can reduce re-reflection of light emitted from a light source of a display device such as a backlight. For a display device substrate, the touch sensing wiring is a low-resistance and alkali-resistant black wiring 6. That is, it can provide good visibility A good display device substrate for touch sensing wiring, the touch sensing wiring is in a state of high adhesion to a substrate belonging to alkali-free glass. In addition, according to this embodiment, a display device with high resolution and capable of responding to high-speed touch input, and a display device substrate used in the display device can be provided. In addition, according to this embodiment, a display device substrate capable of stable electrical mounting can be provided.

接著,參照圖式,說明關於第2實施形態之顯示裝置基板及顯示裝置。 Next, a display device substrate and a display device according to a second embodiment will be described with reference to the drawings.

此外,在以下的說明中,針對與上述實施形態相同的構成,係標註相同的符號並省略說明。 In addition, in the following description, the same reference numerals are assigned to the same configurations as those of the above-mentioned embodiment, and descriptions thereof are omitted.

圖10係表示在本實施形態的顯示裝置基板中,於黑色配線6上積層有彩色濾光片層和透明樹脂層9之構成的一例之圖。 FIG. 10 is a diagram showing an example of a configuration in which a color filter layer and a transparent resin layer 9 are laminated on the black wiring 6 in the display device substrate of this embodiment.

圖11係顯示具備圖10所示之顯示裝置基板之顯示裝置的部分剖面圖。此外,圖11中,省略了顯示裝置的偏光板、相位差板、配向膜、背光單元、與屬於主動元件之電晶體連接的閘極線或源極線等的圖示。 FIG. 11 is a partial cross-sectional view showing a display device including the display device substrate shown in FIG. 10. In addition, in FIG. 11, illustrations of a polarizing plate, a retardation plate, an alignment film, a backlight unit, a gate line or a source line connected to a transistor belonging to an active device of a display device are omitted.

第2實施形態係有關在上述實施形態的顯示裝置基板中,進一步積層有彩色濾光片層(紅像素R,綠像素G,藍像素B)之構成,關於液晶層30或液晶驅動的技術則與第1實施形態相同。 The second embodiment relates to a structure in which a color filter layer (red pixel R, green pixel G, and blue pixel B) is further laminated on the display device substrate of the above-mentioned embodiment, and the technology regarding the liquid crystal layer 30 or liquid crystal driving is This is the same as the first embodiment.

由觀察者方向V觀看本實施形態的顯示裝置之俯視圖係與圖3同樣。將極細線的黑色配線6和彩色濾光片層(紅像素R、綠像素G、藍像素B)形成無間隙且平坦的手段,係可適用例如併用WO14/115367號公報之熱迴銲的著色層形成技術。 A plan view of the display device according to this embodiment when viewed from the observer direction V is the same as that of FIG. 3. A means for forming a gapless and flat black wiring 6 and a color filter layer (red pixels R, green pixels G, and blue pixels B) with extremely thin wires, and it is a color that can be applied by, for example, the thermal reflow of WO 14/115367. Layer formation technology.

本實施形態中,顯示裝置基板100進一步具備配置於黑色配線6上的彩色濾光片層(紅像素R、綠像素G、藍像素B)。彩色濾光片層具備有:紅色的著色層,係對應於紅像素R且由以透過紅色的主波長的光之方式被著色的樹脂所構成;綠色的著色層,係對應於綠像素G且由以透過綠色的主波長的光之方式被著色的樹脂所構成;及藍色的著色層,係對應於藍像素B且由以透過藍色的主波長的光之方式被著色的樹脂。 In this embodiment, the display device substrate 100 further includes a color filter layer (red pixels R, green pixels G, and blue pixels B) arranged on the black wiring 6. The color filter layer includes: a red coloring layer corresponding to the red pixel R and composed of a resin colored so as to transmit light having a dominant wavelength of red; and a green coloring layer corresponding to the green pixel G and It is composed of a resin colored to transmit light with a main wavelength of green; and a blue colored layer corresponds to the blue pixel B and is a resin colored to transmit light with a main wavelength of blue.

形成紅像素R、綠像素G、藍像素B的每一者之紅色的著色層、綠色的著色層、藍色的著色層等的著色層,係使例如有機顏料分散於感光性透明樹脂,且以光微影的方法形成。彩色濾光片層,除了紅色的著色層、綠色的著色層、藍色的著色層之著色層以外,亦可加上淡色層、補色層、白層(透明層)等其他顏色。 Forming a red colored layer, a green colored layer, a blue colored layer, and the like of each of the red pixel R, the green pixel G, and the blue pixel B, for example, disperses an organic pigment in a photosensitive transparent resin and Formed by photolithography. In addition to the coloring layer of the red coloring layer, the green coloring layer, and the blue coloring layer, the color filter layer may be added with other colors such as a light coloring layer, a complementary coloring layer, and a white layer (transparent layer).

本實施形態的顯示裝置基板100中,由於延伸於Y方向的黑色配線6係以排列於X方向的條狀圖案形狀形成,所以紅像素R、綠像素G、藍像素B的每一者,亦可作成將同色且在Y方向連續的圖案於X方向排列複數個而成的條狀圖案形狀。將紅像素R、綠像素G、藍像素B以條狀圖案形成時,可藉由黑色配線6和觸控金屬配線42(或閘極線41),形成在平面視圖中正交之格子狀的黑色矩陣。 In the display device substrate 100 of this embodiment, since the black wirings 6 extending in the Y direction are formed in a stripe pattern arranged in the X direction, each of the red pixels R, the green pixels G, and the blue pixels B is also It is possible to form a stripe pattern in which a plurality of patterns of the same color and continuous in the Y direction are arranged in the X direction. When the red pixels R, the green pixels G, and the blue pixels B are formed in a stripe pattern, the black wiring 6 and the touch metal wiring 42 (or the gate line 41) can be formed into a rectangular grid pattern in a plan view. Black matrix.

將上述的顯示裝置基板100和陣列基板35貼合時,由於黑色配線6和觸控金屬配線42(或閘極線41)分別為條狀圖案,所以不需要高精度的對位(對準;alignment),可有助於顯示裝置的產率改善。 When the above-mentioned display device substrate 100 and the array substrate 35 are bonded, since the black wiring 6 and the touch metal wiring 42 (or the gate line 41) are stripe patterns, respectively, high-precision alignment (alignment; alignment), which can help improve the yield of the display device.

在彩色濾光片層上積層有透明樹脂層9。 A transparent resin layer 9 is laminated on the color filter layer.

圖10及圖11中,黑色配線6係延伸於對紙面垂直的方向(Y方向),且配置成彼此大致平行。此外,觸控金屬配線42係位在紙面裏側,所以原本就沒有圖示,惟為了說明而以虛線表示,示意地顯示形成靜電電容C2之構成。在本實施形態的顯示裝置中,與上述的實施形態同樣,藉由驅動黑色配線6和觸控金屬配線42,並檢測產生於此等之間之靜電電容C2的變化,便可檢測指尖或筆等與顯示裝置的畫面之距離或接觸。 In FIGS. 10 and 11, the black wirings 6 extend in a direction (Y direction) perpendicular to the paper surface, and are arranged substantially parallel to each other. In addition, the touch metal wiring 42 is located on the back side of the paper surface, so it is not shown in the drawing, but it is indicated by a dotted line for illustration, and the structure for forming the electrostatic capacitance C2 is schematically shown. In the display device of this embodiment, similarly to the above-mentioned embodiment, by driving the black wiring 6 and the touch metal wiring 42 and detecting a change in the electrostatic capacitance C2 generated between these, it is possible to detect a fingertip or The distance or contact between the pen, etc. and the screen of the display device.

在平面視圖中,與Y方向平行地配設的黑色配線6,係與觸控金屬配線42正交。觸控金屬配線42係隔著絕緣層21、22、23形成於閘極線41上,閘極線41及源極線40係在電性上獨立。 In a plan view, the black wirings 6 arranged parallel to the Y direction are orthogonal to the touch metal wirings 42. The touch metal wiring 42 is formed on the gate line 41 via the insulating layers 21, 22, and 23, and the gate line 41 and the source line 40 are electrically independent.

黑色配線6和觸控金屬配線42(或閘極線41),係可作為為了提升顯示的對比(contrast)而多用於顯示裝置之黑色矩陣的替代使用。由於任一者皆可用金屬配線形成,所以來自未圖示之背光單元之光的遮光性高。 The black wiring 6 and the touch metal wiring 42 (or the gate line 41) can be used as an alternative to the black matrix of the display device in order to improve the contrast of the display. Since any of them can be formed of metal wiring, light from a backlight unit (not shown) has high light shielding properties.

如上所述,根據本實施形態的顯示裝置基板及顯示裝置,可獲得與上述的實施形態同樣的效果。亦即,根據本實施形態,可提供一種具備與基板密接性高的狀態,且能夠降低由背光源等顯示裝置的光源發出之光的再反射之觸控感測用配線之顯示裝置基板,該觸控感測用配線為低電阻且具抗鹼性的黑色配線6,該基板為無鹼玻璃。亦即,可提供具備與基板密接性高的狀態,且可視性良好的觸控感測用配線之顯示裝置基板,該基 板為無鹼玻璃。又,根據本實施形態,可提供高解析度且能夠因應高速的觸控輸入之顯示裝置、以及使用於該顯示裝置之顯示裝置基板。又,根據本實施形態,可提供能進行穩定的電性安裝之顯示裝置基板。 As described above, according to the display device substrate and the display device of this embodiment, the same effects as those of the above embodiment can be obtained. That is, according to this embodiment, it is possible to provide a display device substrate having a touch sensing wiring that has a state of high adhesion to the substrate and can reduce re-reflection of light emitted from a light source of a display device such as a backlight. The touch-sensing wiring is a low-resistance and alkali-resistant black wiring 6, and the substrate is an alkali-free glass. That is, it is possible to provide a display device substrate having a touch sensing wiring having a state of high adhesion to the substrate and good visibility. The plate is alkali-free glass. In addition, according to this embodiment, a display device with high resolution and capable of responding to high-speed touch input, and a display device substrate used in the display device can be provided. In addition, according to this embodiment, a display device substrate capable of stable electrical mounting can be provided.

接著,參照圖式,說明關於第3實施形態的顯示裝置基板及顯示裝置。 Next, a display device substrate and a display device according to a third embodiment will be described with reference to the drawings.

圖12為第3實施形態之顯示裝置基板200的部分剖面圖。 FIG. 12 is a partial cross-sectional view of a display device substrate 200 according to a third embodiment.

圖13係顯示具備圖12所示之顯示裝置基板200之液晶顯示裝置的部分剖面圖。此外,圖13中,省略了顯示裝置的偏光板、相位差板、配向膜、背光單元、與屬於主動元件之電晶體連接的閘極線或源極線等的圖示。 FIG. 13 is a partial cross-sectional view showing a liquid crystal display device including the display device substrate 200 shown in FIG. 12. In addition, in FIG. 13, illustrations of a polarizing plate, a retardation plate, an alignment film, a backlight unit, a gate line or a source line connected to a transistor belonging to an active device of a display device are omitted.

本實施形態中,顯示裝置基板200進一步具備有配置於黑色配線6上的彩色濾光片層(紅像素R、綠像素G、藍像素B)、和配置在彩色濾光片層上的透明樹脂層9、和配置在透明樹脂層9上的透明導電膜配線7。 In this embodiment, the display device substrate 200 further includes a color filter layer (red pixels R, green pixels G, and blue pixels B) disposed on the black wiring 6 and a transparent resin disposed on the color filter layer. The layer 9 and the transparent conductive film wiring 7 arranged on the transparent resin layer 9.

本實施形態與第2實施形態的相異點在於:在顯示裝置基板200的透明樹脂層9上形成有透明導電膜配線7之構造,且陣列基板45不具有共同電極。 The difference between this embodiment and the second embodiment is that the transparent conductive film wiring 7 is formed on the transparent resin layer 9 of the display device substrate 200, and the array substrate 45 does not have a common electrode.

黑色配線6的各個係與上述的第1實施形態及第2實施形態同樣延伸於對紙面垂直的方向(Y方向),且複數條黑色配線6形成排列於X方向的條狀圖案。 Each of the black wirings 6 extends in a direction perpendicular to the paper surface (the Y direction) as in the first and second embodiments described above, and a plurality of black wirings 6 form a stripe pattern arranged in the X direction.

彩色濾光片層具備有:紅色的著色層,係對應於紅像素R且以透過紅色的主波長的光之方式由被著 色的樹脂所構成;綠色的著色層,係對應於綠像素G且以透過綠色的主波長的光之方式由被著色的樹脂所構成;及藍色的著色層,係對應於藍像素B且以透過藍色的主波長的光之方式由被著色的樹脂。在彩色濾光片層上積層有透明樹脂層9。 The color filter layer is provided with a red coloring layer corresponding to the red pixel R and transmitted by a light having a dominant wavelength of red. A colored resin layer; a green colored layer corresponding to the green pixel G and composed of a colored resin so as to transmit light having a dominant wavelength of green; and a blue colored layer corresponding to the blue pixel B and The colored resin is used to transmit light of the blue main wavelength. A transparent resin layer 9 is laminated on the color filter layer.

透明樹脂層9係可以具有熱硬化性的丙烯酸樹脂等形成。在此例中,透明樹脂層9的膜厚設為1.5μm。透明樹脂層9的膜厚係可在黑色配線6和透明導電膜配線7呈電性絕緣的範圍內任意地設定。黑色層4或透明樹脂層9亦可為例如積層折射率等光學特性相互相異的複數個層之構成。上述之第1實施形態及第2實施形態也同樣,亦可將黑色層4或透明樹脂層9設成多層構成。 The transparent resin layer 9 may be formed of an acrylic resin or the like having thermosetting properties. In this example, the film thickness of the transparent resin layer 9 is set to 1.5 μm. The film thickness of the transparent resin layer 9 can be arbitrarily set within a range where the black wiring 6 and the transparent conductive film wiring 7 are electrically insulated. The black layer 4 or the transparent resin layer 9 may be constituted by a plurality of layers having mutually different optical characteristics such as a refractive index. The same applies to the first embodiment and the second embodiment described above, and the black layer 4 or the transparent resin layer 9 may be formed in a plurality of layers.

透明導電膜配線7係配置於透明樹脂層9上。透明導電膜配線7係藉由例如ITO或IZO等的透明導電材料形成。此外,亦可構成為在透明導電膜配線7上,以與其電性接觸的形態積層金屬配線等的輔助導體。 The transparent conductive film wiring 7 is arranged on the transparent resin layer 9. The transparent conductive film wiring 7 is formed of a transparent conductive material such as ITO or IZO. In addition, an auxiliary conductor such as a metal wiring may be laminated on the transparent conductive film wiring 7 so as to be in electrical contact therewith.

在本實施形態的顯示裝置基板及顯示裝置中,黑色配線6和透明導電膜配線7係隔著屬於介電體的透明樹脂層9正交。例如,可將方向X的像素間距設定為21μm,將黑色配線寬設定為4μm,將透明導電膜配線7的寬度設定為123μm(透明導電膜配線7的間距為126μm)。 In the display device substrate and the display device of this embodiment, the black wiring 6 and the transparent conductive film wiring 7 are orthogonal to each other with the transparent resin layer 9 belonging to the dielectric body. For example, the pixel pitch in the direction X can be set to 21 μm, the width of the black wiring can be set to 4 μm, and the width of the transparent conductive film wiring 7 can be set to 123 μm (the pitch of the transparent conductive film wiring 7 is 126 μm).

本實施形態中,關於觸控感測的靜電電容C3係形成於黑色配線6和透明導電膜配線7之間。亦 即,在本實施形態中,透明導電膜配線7為共同電極,且發揮觸控電極的檢測電極之用途,黑色配線6係可作為觸控感測的驅動電極使用。在黑色配線6和透明導電膜配線7之間,形成有大致一定的靜電電容C3,而因手指等指示器的接觸或接近的關係,該部位的靜電電容C3會改變,並檢測觸控位置。透明導電膜配線7或黑色配線6係藉由在觸控感測時疏化並進行觸控訊號的檢測,而達成觸控感測的高速化。 In this embodiment, the capacitance C3 for touch sensing is formed between the black wiring 6 and the transparent conductive film wiring 7. also That is, in this embodiment, the transparent conductive film wiring 7 is a common electrode and functions as a detection electrode of the touch electrode, and the black wiring 6 is used as a driving electrode for touch sensing. Between the black wiring 6 and the transparent conductive film wiring 7, a substantially constant electrostatic capacitance C3 is formed. Due to the contact or proximity of an indicator such as a finger, the electrostatic capacitance C3 at the location will change and the touch position will be detected. The transparent conductive film wiring 7 or the black wiring 6 achieves high-speed touch sensing by thinning and detecting touch signals during touch sensing.

又,液晶層30係以像素電極36和透明導電膜配線7之間的電壓被驅動。亦即,透明導電膜配線7係成為液晶驅動的共同電極。因此,在本實施形態的液晶顯示裝置中,液晶驅動電壓係施加於Z方向(液晶層30的厚度方向)。亦即,在本實施形態的液晶顯示裝置中,藉由所謂的縱電場驅動液晶。液晶驅動亦可為利用共同反轉驅動之液晶驅動,或者,亦可將共同電極設為恆電位以對像素電極36進行反轉驅動 The liquid crystal layer 30 is driven by a voltage between the pixel electrode 36 and the transparent conductive film wiring 7. That is, the transparent conductive film wiring 7 becomes a common electrode for liquid crystal driving. Therefore, in the liquid crystal display device of this embodiment, the liquid crystal driving voltage is applied in the Z direction (thickness direction of the liquid crystal layer 30). That is, in the liquid crystal display device of this embodiment, the liquid crystal is driven by a so-called vertical electric field. The liquid crystal driving may also be a liquid crystal driving using a common inversion driving, or the common electrode may be set to a constant potential to invert the pixel electrode 36.

陣列基板45未具備共同電極。像素電極36係配置於各像素之大致矩形的電極。與上述的第1實施形態同樣,像素電極36係經由接觸孔而與主動元件電性連接。 The array substrate 45 does not include a common electrode. The pixel electrode 36 is a substantially rectangular electrode arranged in each pixel. Similar to the first embodiment described above, the pixel electrode 36 is electrically connected to the active device via a contact hole.

圖14係從觀察者方向V觀看圖13所示顯示裝置基板200之俯視圖。 FIG. 14 is a plan view of the display device substrate 200 shown in FIG. 13 as viewed from the viewer's direction V. FIG.

黑色配線6係與圖3所示之例子同樣,具有引繞配線6a和虛擬配線6b。引繞配線6a係從矩形顯示區域19的一端延伸到另一端之外面。虛擬配線6b係從 矩形顯示區域19的一端延伸至另一端。在引繞配線6a之間,配置有兩條虛擬配線6b。 The black wiring 6 is similar to the example shown in FIG. 3, and includes a lead wiring 6a and a dummy wiring 6b. The lead wiring 6a extends from one end of the rectangular display area 19 to the outer surface of the other end. Virtual wiring 6b is from One end of the rectangular display area 19 extends to the other end. Between the routing wirings 6a, two dummy wirings 6b are arranged.

透明導電膜配線7係在與黑色配線6延伸的方向(Y方向)大致正交的方向(X方向)上延伸而配置,複數個透明導電膜配線7形成排列在Y方向的條狀圖案。圖14中,透明導電膜配線7的線寬(Y方向的寬度)係與排列在X方向之像素的列之3列份的寬度大致相同。透明導電膜配線7係配置成從矩形顯示區域19的一端延伸至另一端的外部。 The transparent conductive film wirings 7 are arranged to extend in a direction (X direction) substantially orthogonal to the direction (Y direction) where the black wirings 6 extend, and the plurality of transparent conductive film wirings 7 form a stripe pattern arranged in the Y direction. In FIG. 14, the line width (the width in the Y direction) of the transparent conductive film wiring 7 is approximately the same as the width of the three columns of the pixels arranged in the X direction. The transparent conductive film wiring 7 is arranged to extend from one end of the rectangular display area 19 to the outside of the other end.

黑色配線6和透明導電膜配線7,係與第1實施形態及第2實施形態同樣,可作為使用於觸控感測控制的電極(以下,有時省略為觸控電極或觸控配線)而進行疏化(thinning)驅動。疏化的配線,係可作成例如在電性上浮動的形狀(浮動圖案)。 The black wiring 6 and the transparent conductive film wiring 7 are similar to the first embodiment and the second embodiment, and can be used as electrodes for touch sensing control (hereinafter, sometimes omitted as touch electrodes or touch wiring). Thinning drive is performed. The thinned wiring can be made into a floating shape (floating pattern), for example, electrically.

浮動圖案亦可藉由開關(switching)元件,切換到檢測電極或驅動電極以進行高畫質的觸控感測。或者,浮動圖案亦可以與地面(接地至框體)電性連接之方式進行切換。為了改善觸控感測的S/N比,在觸控感測的訊號檢測時將TFT等主動元件的訊號配線暫時與地面(框體等)接地。 The floating pattern can also be switched to a detection electrode or a driving electrode by a switching element for high-quality touch sensing. Alternatively, the floating pattern may be switched in a manner of being electrically connected to the ground (ground to frame). In order to improve the S / N ratio of touch sensing, the signal wiring of active components such as TFTs is temporarily grounded to the ground (frame, etc.) during the touch sensing signal detection.

又,在以觸控感測控制檢測之靜電電容C3的重置需要時間之觸控配線中,即,在觸控感測下的時間常數(電容與電阻值的積)大的觸控配線中,亦可例如將奇數列和偶數列交互地利用於感測,並進行已調整時間常數的大小之驅動。或者,將複數條數的觸控配線分 組來進行驅動或檢測。複數條數的觸控配線的分組,亦可不採用線序,而採用以其群組單位亦稱為自己檢測方式之一次檢測的方式。亦可進行以群組單位的並列驅動。或者,為了進行寄生電容等的雜訊消除,可採用取接近、鄰接之觸控配線的檢測訊號的差之差異檢測方式。 In addition, in the touch wiring that takes time to reset the electrostatic capacitance C3 detected by the touch sensing control, that is, in the touch wiring with a large time constant (product of capacitance and resistance value) under touch sensing Alternatively, for example, the odd and even columns can be used interactively for sensing, and driven by the adjusted time constant. Or, divide the plurality of touch wiring Group to drive or test. The grouping of the plurality of touch wirings may not adopt a line sequence, but adopt a one-time detection method in which the group unit is also called a self-detection method. Parallel driving can also be performed in groups. Alternatively, in order to eliminate noise such as parasitic capacitance, a difference detection method of detecting the difference between the detection signals of adjacent and adjacent touch wirings may be adopted.

上述的第1實施形態及第2實施形態亦同樣,黑色配線6或透明導電膜配線7,可作成觸控感測的檢測電極或驅動電極。只要黑色配線6和透明導電膜配線7的其中一者為檢測電極,且另一者為驅動電極即可。 The same applies to the first embodiment and the second embodiment described above. The black wiring 6 or the transparent conductive film wiring 7 can be used as a touch detection sensing electrode or a driving electrode. As long as one of the black wiring 6 and the transparent conductive film wiring 7 is a detection electrode, and the other is a driving electrode.

透明導電膜配線7係可在觸控感測驅動時及液晶驅動時設成恆電位的共同電位(common potential)。或者,可使所有的透明導電膜配線7經由高電阻接地。又,在觸控感測驅動時及液晶驅動時設成恆電位的共同電位之透明導電膜配線7,係用於區分觸控感測驅動和液晶驅動各自的驅動訊號,可以說是發揮屏蔽膜之功用。上述的高電阻的值係可設成例如數giga ohm以上數peta ohm以下的範圍。代表性地,可設成1 tera ohm以上50 tera ohm以下。然而,在顯示裝置的薄膜電晶體的通道層49設為IGZO等氧化物半導體的情況下,為了緩和容易產生顯示裝置的像素的殘影之狀態,亦可使用比1giga ohm低的電阻。又,在觸控感測中,在沒有設置靜電電容C3的重置電路之簡易控制中,為了該靜電電容C3的重置,亦可使用比1 giga ohm低的電阻。在主動元件的通道層49使用IGZO等氧化物半導體的顯示裝置中,可進行觸控感測控制中之上述的各種對策。 The transparent conductive film wiring 7 can be set to a common potential at a constant potential during touch sensing driving and liquid crystal driving. Alternatively, all the transparent conductive film wirings 7 can be grounded via a high resistance. In addition, the transparent conductive film wiring 7 which is set to a common potential during the touch sensing driving and the liquid crystal driving is used to distinguish the driving signals of the touch sensing driving and the liquid crystal driving. Function. The value of the high resistance can be set in a range of, for example, several giga ohms to several peta ohms. Typically, it can be set to 1 tera ohm or more and 50 tera ohm or less. However, when the channel layer 49 of the thin film transistor of the display device is an oxide semiconductor such as IGZO, a resistance lower than 1 giga ohm may be used in order to alleviate the state of the afterimage of the pixels of the display device. In addition, in touch sensing, in a simple control without a reset circuit of the electrostatic capacitance C3, for resetting the electrostatic capacitance C3, a resistance lower than 1 giga ohm can also be used. In a display device in which an oxide semiconductor such as IGZO is used as the channel layer 49 of the active device, various measures described above in touch sensing control can be performed.

又,若增加黑色配線6的疏化以進行低密度的掃描時,可降低驅動頻率且進行高精度的感測、減少耗電。反之,藉由使黑色配線6的疏化減少之高密度的掃描,可活用於例如指紋認證或利用觸控筆的輸入等。 In addition, if the thinning of the black wiring 6 is performed for low-density scanning, the driving frequency can be reduced, high-precision sensing can be performed, and power consumption can be reduced. Conversely, high-density scanning that reduces the thinning of the black wiring 6 can be used for fingerprint authentication or input using a stylus.

觸控感測驅動時及液晶驅動時施加於透明導電膜配線7的恆電位未必意味“0(零)”伏特,亦可設成驅動電壓之高低的中間的恆電位,亦可設成偏置的驅動電壓。在觸控感測驅動時及液晶驅動時,透明導電膜配線7為恆電位,故亦可以驅動液晶之像素電極36的驅動頻率不同的頻率,驅動透明導電膜配線7。 The constant potential applied to the transparent conductive film wiring 7 during touch sensing driving and liquid crystal driving does not necessarily mean "0 (zero)" volts, and can also be set to a constant potential in the middle of the driving voltage level, or it can be set to an offset Driving voltage. During the touch sensing driving and the liquid crystal driving, the transparent conductive film wiring 7 has a constant potential, so the pixel electrode 36 of the liquid crystal can also be driven at a different frequency to drive the transparent conductive film wiring 7.

此外,作為液晶驅動的共同電極的共同電位Vcom一般係包含藉液晶驅動的幀反轉之交流矩形訊號,例如,依各幀施加±2.5V或±5V的交流電壓。本實施形態中,如此的驅動所需要的交流電壓沒有作為恆電位處理。本實施形態的技術中之恆電位的電壓變動,必須是至少比液晶驅動的閾值(Vth)小之一定的電壓變動以內的恆電位。 In addition, the common potential Vcom, which is a common electrode driven by the liquid crystal, generally includes an AC rectangular signal inverted by liquid crystal-driven frames, for example, an AC voltage of ± 2.5V or ± 5V is applied for each frame. In this embodiment, the AC voltage required for such driving is not treated as a constant potential. In the technique of this embodiment, the voltage change of the constant potential must be a constant potential within a certain voltage fluctuation which is at least smaller than the threshold (Vth) of the liquid crystal driving.

本實施形態中,藉由將透明導電膜配線7的電位設成觸控感測驅動及液晶驅動皆為相同的恆電位,可將觸控感測驅動和液晶驅動以不同的頻率驅動。恆電位的透明導電膜配線7,係可發揮用以將液晶驅動訊號和觸控感測驅動訊號電性分離之屏蔽的作用。 In this embodiment, by setting the potential of the transparent conductive film wiring 7 to the same constant potential as the touch sensing driving and the liquid crystal driving, the touch sensing driving and the liquid crystal driving can be driven at different frequencies. The constant-potential transparent conductive film wiring 7 can serve as a shield for electrically separating the liquid crystal driving signal and the touch sensing driving signal.

在本實施形態的顯示裝置基板200中,可獲得大的邊緣電容,且藉由一邊保持高的S/N比,一邊降低觸控感測的驅動電壓,可減少耗電。 In the display device substrate 200 of this embodiment, a large edge capacitance can be obtained, and the driving voltage for touch sensing can be reduced while maintaining a high S / N ratio, thereby reducing power consumption.

又,將黑色配線6設為觸控感測的驅動電極,將透明導電膜配線7設為檢測電極時,可使觸控感測的驅動條件與液晶的驅動條件(頻率或電壓等)不同。藉由使觸控感測的驅動頻率與液晶的驅動頻率不同,各自可不易受到驅動的影響。可將觸控感測的驅動頻率設為1KHz以上100KHz以下,將液晶驅動的頻率設為0.1Hz以上480Hz以下。藉由作成採用以IGZO等氧化物半導體作為通道層之TFT陣列基板的液晶顯示裝置,即便是例如0.1Hz以上30Hz以下的低頻率驅動,也可以低電力消耗進行沒有閃爍(影像的閃爍)的顯示。 In addition, when the black wiring 6 is used as a driving electrode for touch sensing, and the transparent conductive film wiring 7 is used as a detection electrode, driving conditions for touch sensing and driving conditions (frequency, voltage, etc.) of the liquid crystal can be made different. By making the driving frequency of the touch sensing different from the driving frequency of the liquid crystal, each of them may not be easily affected by the driving. The driving frequency of touch sensing can be set to 1KHz or more and 100KHz or less, and the frequency of liquid crystal driving can be set to 0.1Hz to 480Hz. By creating a liquid crystal display device using a TFT array substrate using an oxide semiconductor such as IGZO as a channel layer, even if it is driven at a low frequency of 0.1 Hz to 30 Hz, it can display without flicker (flickering of the image) with low power consumption. .

再者,也能夠以分時方式進行觸控感測驅動與液晶驅動。在黑色配線6設為驅動電極(掃描電極)的情況,可配合所要求之觸控輸入的速度,任意地調整靜電電容檢測的掃描頻率。 Moreover, touch sensing driving and liquid crystal driving can also be performed in a time-sharing manner. When the black wiring 6 is used as a driving electrode (scanning electrode), the scanning frequency of the electrostatic capacitance detection can be arbitrarily adjusted in accordance with the required touch input speed.

再者,為了得到快速的響應性,可將黑色配線6來進行間隔掃描。又,亦可替換觸控感測的驅動電極和檢測電極,以透明導電膜配線7作為施加一定的頻率的電壓之驅動電極(掃描電極)。此外,觸控感測和液晶驅動時施加於驅動電極的電壓(交流訊號),亦可為將正負的電壓反轉的反轉驅動方式。觸控感測驅動與液晶驅動係可以分時方式進行,亦可不為分時方式。 Furthermore, in order to obtain quick response, the black wiring 6 may be scanned at intervals. In addition, the driving electrodes and the detection electrodes for touch sensing may be replaced, and the transparent conductive film wiring 7 may be used as a driving electrode (scanning electrode) for applying a voltage of a certain frequency. In addition, the voltage (AC signal) applied to the driving electrodes during touch sensing and liquid crystal driving can also be a reverse driving method that reverses the positive and negative voltages. The touch sensing driving and the liquid crystal driving system may be performed in a time-sharing manner, or may not be a time-sharing manner.

此外,就施加至驅動電極的電壓(交流訊號)而言,藉由縮小所施加的交流訊號的電壓幅度(振幅),便能夠減輕對液晶顯示的影響。 In addition, as for the voltage (AC signal) applied to the driving electrode, by reducing the voltage amplitude (amplitude) of the applied AC signal, the influence on the liquid crystal display can be reduced.

如上所述,在本實施形態的顯示裝置基板及顯示裝置中,由於透明導電膜配線7的電位為恆電位,所以能夠在不依存於液晶的驅動頻率和時序下,設定作為觸控電極之黑色電極的驅動頻率和訊號檢測的時序。可將觸控電極的驅動頻率設定為與液晶驅動的頻率不同的頻率或更高的驅動頻率。 As described above, in the display device substrate and the display device of this embodiment, since the potential of the transparent conductive film wiring 7 is constant, it is possible to set black as a touch electrode without depending on the driving frequency and timing of the liquid crystal. The driving frequency of the electrodes and the timing of signal detection. The driving frequency of the touch electrodes can be set to a frequency different from the frequency of the liquid crystal driving or a higher driving frequency.

一般而言,液晶驅動的頻率乃係60Hz或此頻率的整數倍之驅動頻率。通常,觸控感測部位係受液晶驅動的頻率所伴隨的雜訊影響。此外,通常的家庭電源為50Hz或60Hz的交流電源,觸控感測部位容易接收到以該種外部電源動作的電氣機器產生的雜訊。因此,藉由將觸控驅動的頻率設定成自50Hz或60Hz的頻率若干位移或自該頻率的整數倍若干位移後的不同頻率,便能夠大幅降低液晶驅動和外部電子機器產生的雜訊的影響。位移量為若干量即可,例如,自雜訊頻率位移±3%以上±17%以下的位移量即可,能夠減少與雜訊頻率間的干涉。例如,觸控驅動的頻率係能夠從1Hz以上100kHz以下的範圍,選擇不會與上述液晶驅動頻率和電源頻率發生干涉的不同頻率。藉由選擇不會與液晶驅動頻率和電源頻率發生干涉的不同頻率,例如便能夠減輕點反轉驅動中產生的耦合雜訊等雜訊的影響。 Generally speaking, the driving frequency of the liquid crystal is a driving frequency of 60 Hz or an integer multiple of this frequency. Generally, the touch sensing portion is affected by noise accompanying the frequency of the liquid crystal driving. In addition, the common household power source is an AC power source of 50 Hz or 60 Hz, and the touch sensing portion is prone to receive noise generated by electrical equipment operating with such an external power source. Therefore, by setting the frequency of the touch drive to a frequency shifted from a frequency of 50 Hz or 60 Hz or a different frequency after an integer multiple of the frequency, the influence of noise generated by the liquid crystal drive and external electronic equipment can be greatly reduced. . The amount of displacement is sufficient, for example, the amount of displacement from the noise frequency by ± 3% or more and ± 17% or less is sufficient, and interference with the noise frequency can be reduced. For example, the frequency of the touch drive can be selected from a range of 1 Hz to 100 kHz, and a different frequency that does not interfere with the above-mentioned liquid crystal driving frequency and power frequency. By selecting different frequencies that do not interfere with the liquid crystal drive frequency and power supply frequency, for example, the influence of noise such as coupling noise generated in dot inversion driving can be reduced.

為進行3D(立體影像)顯示的顯示裝置之情況,除了通常的二維圖像的顯示之外,為了三維顯示位於跟前側的圖像和位於裏側的圖像,故需要複數個影像訊號(例如右眼用的影像訊號與左眼用的影像訊號)。因 此,液晶驅動的頻率需要例如240Hz或480Hz等的高速驅動及大量的影像訊號。此時,能夠令觸控感測驅動的頻率不同於液晶驅動的頻率的本實施形態的優點係更為顯著。例如,在藉由本實施形態進行3D顯示的遊戲機中,能夠進行高速、高精度的觸控感測。本實施形態係在遊戲機和自動提款機等手指等的觸控輸入頻度高的顯示器上特別有用。 In the case of a display device for 3D (stereoscopic image) display, in addition to the normal two-dimensional image display, in order to three-dimensionally display the image located on the front side and the image located on the back side, a plurality of image signals (for example, Video signal for right eye and video signal for left eye). because Therefore, the frequency of liquid crystal driving requires high-speed driving such as 240 Hz or 480 Hz and a large number of image signals. At this time, the advantage of this embodiment that can make the frequency of the touch sensing driving different from the frequency of the liquid crystal driving is more significant. For example, in a game machine that performs 3D display in this embodiment, high-speed and high-accuracy touch sensing can be performed. This embodiment is particularly useful on a display with a high frequency of touch input by a finger such as a game machine or an automatic teller machine.

此外,在觸控感測驅動中,並非將驅動電壓供給至全部的黑色配線(驅動電極)6,而是進行疏化以進行觸控位置的檢測,藉此,能夠降低觸控感測的電力消耗。 In addition, in the touch sensing driving, instead of supplying the driving voltage to all the black wirings (driving electrodes) 6, the thinning is performed to detect the touch position, thereby reducing the power of the touch sensing. Consume.

未圖示之主動元件(TFT)的電晶體的通道層,係可使用氧化物半導體或多晶矽半導體,氧化物半導體係可為被稱為IGZO等的金屬氧化物。 The channel layer of the transistor of the active device (TFT) (not shown) may be an oxide semiconductor or a polycrystalline silicon semiconductor, and the oxide semiconductor may be a metal oxide such as IGZO.

藉由以含有IGZO等鎵、銦、鋅、錫、鍺、鎂、鋁之中兩種以上的金屬氧化物之氧化物半導體來作成通道層,便能夠將點反轉驅動中產生的耦合雜訊(coupling noise)的影響大致予以消除。這是因為使用IGZO等的氧化物半導體形成的主動元件係能夠以極短的時間(例如2msec)處理影像訊號即液晶驅動的矩形訊號,又,具有能夠保持在施加影像訊號後的液晶顯示之像素中的電壓之記憶性,因此,在電壓保持期間之期間不會有新的雜訊產生,能夠進一步降低因液晶驅動產生的雜訊之影響。 By using an oxide semiconductor containing two or more metal oxides such as gallium, indium, zinc, tin, germanium, magnesium, and aluminum, such as IGZO, as the channel layer, the coupling noise generated during dot inversion driving can be reversed. The effect of (coupling noise) is largely eliminated. This is because an active element formed using an oxide semiconductor such as IGZO can process an image signal, ie, a rectangular signal driven by a liquid crystal, in an extremely short time (for example, 2 msec), and it has pixels capable of holding a liquid crystal display after the image signal is applied Therefore, no new noise is generated during the voltage holding period, which can further reduce the influence of noise generated by liquid crystal driving.

此外,IGZO等的氧化物半導體的耐電壓高,故能夠以較高之電壓高速驅動液晶,特別有利於3D等三維影像顯示。通道層使用IGZO等的氧化物半導體之電晶體,其記憶性高,故有例如液晶驅動頻率採用0.1Hz以上30Hz程度的低頻率時仍不易產生閃爍(flicker)(顯示的閃爍)之優點 In addition, oxide semiconductors such as IGZO have high withstand voltages, so they can drive liquid crystals at high voltages at high speeds, which is particularly useful for 3D video displays such as 3D. The channel layer uses an oxide semiconductor transistor such as IGZO, which has high memory, so it has the advantage that flicker (display flicker) is not easy to occur when the liquid crystal driving frequency is at a low frequency of about 0.1 Hz to 30 Hz.

又,藉由使用以IGZO等作為通道層的電晶體,且併用低頻率的點反轉驅動或行反轉驅動、和以與點反轉驅動的頻率不同的頻率驅動的觸控驅動,能以低消耗電力,同時獲得高畫質的影像顯示與高精度的觸控感應。此外,具備通道層使用IGZO等的氧化物半導體之電晶體的陣列基板,係可適用於FFS等的橫電場的液晶顯示裝置、VA等縱電場的液晶顯示裝置、或有機EL顯示裝置。 In addition, by using a transistor having a channel layer such as IGZO, and using a low-frequency dot inversion driving or a row inversion driving, and a touch driving driven at a frequency different from the frequency of the dot inversion driving, Low power consumption, while obtaining high-quality image display and high-precision touch sensing. In addition, an array substrate provided with an oxide semiconductor transistor such as IGZO as a channel layer is a liquid crystal display device applicable to a lateral electric field such as FFS, a liquid crystal display device such as a VA longitudinal field, or an organic EL display device.

又,當液晶驅動採用像素電極中之點反轉驅動或行反轉驅動時,若使用記憶性的良好的IGZO,亦可省去將透明電極圖案設為一定的電壓(恆電位)而進行定電壓驅動所需要的保持電容(儲存電容器)。液晶驅動係除了點反轉驅動之外,亦可為將共同電極即透明導電膜配線7設為恆電位的行反轉驅動(源極反轉驅動)。或者,亦可組合將透明導電膜配線7設為恆電位的行反轉驅動與將透明導電膜配線7設為恆電位的點反轉驅動。 In addition, when the dot-inversion driving or the row-inversion driving in the pixel electrode is used for the liquid crystal driving, if a good memory IGZO is used, the transparent electrode pattern can be omitted by setting a constant voltage (constant potential). Holding capacitor (storage capacitor) required for voltage driving. In addition to the dot inversion driving, the liquid crystal driving system may be a row inversion driving (source inversion driving) in which the transparent conductive film wiring 7 which is a common electrode is set to a constant potential. Alternatively, a line inversion driving in which the transparent conductive film wiring 7 is set to a constant potential and a point inversion driving in which the transparent conductive film wiring 7 is set to a constant potential may be combined.

本實施形態的液晶顯示裝置,對於液晶層30,是將液晶的驅動電壓施加在共同電極即透明導電膜配線7與設置於陣列基板的像素電極36之間,來驅動液 晶層30。本實施形態中,適用在液晶層30和透明基板15、25的厚度方向(縱方向)Z施加電壓,=而被稱為縱電場方式的液晶驅動方式。 In the liquid crystal display device of this embodiment, a driving voltage for liquid crystal is applied to the liquid crystal layer 30 between the transparent conductive film wiring 7 which is a common electrode and the pixel electrode 36 provided on the array substrate to drive the liquid. 晶 层 30. The crystal layer 30. In this embodiment, a liquid crystal driving method called a vertical electric field method is applied when a voltage is applied to the thickness direction (vertical direction) Z of the liquid crystal layer 30 and the transparent substrates 15 and 25.

就能適用縱向電場方式的液晶驅動方式而言,可舉出VA(Vertical Alignment;垂直配向)、HAN(Hybrid-aligned Nematic;混合排列向列)、TN(Twisted Nematic;扭轉向列)、OCB(Optically Compensated Bend;光學補償彎曲)、CPA(Continuous Pinwheel Alignment;連續焰火狀排列)、ECB(Electrically Controlled Birefringence;電控雙折射)、TBA(Transverse Bent Alignment;橫向彎曲取向)等,能夠適當選擇使用。另外,在VA模式中係實現出色的正常顯黑,故為了有效運用黑顯示,較佳為採用VA模式。又,此外,從正面亮度的強度及黑顯示的黑階(level)的強度的觀點來看,垂直配向的液晶(VA)係比水平配向的液晶(FFS)模式優異。 Liquid crystal driving methods that can be applied to the vertical electric field method include VA (Vertical Alignment), HAN (Hybrid-aligned Nematic), TN (Twisted Nematic), OCB ( Optically Compensated Bend (Optical Compensated Bend), CPA (Continuous Pinwheel Alignment), ECB (Electrically Controlled Birefringence), TBA (Transverse Bent Alignment, Transverse Bent Alignment), etc., can be selected as appropriate. In addition, in the VA mode, excellent normal black display is realized. Therefore, in order to effectively use the black display, the VA mode is preferably used. In addition, from the viewpoint of the intensity of the front brightness and the intensity of the black level of the black display, the vertically aligned liquid crystal (VA) is superior to the horizontally aligned liquid crystal (FFS) mode.

接著,說明上述之第1至第3實施形態的顯示裝置基板的製造方法。 Next, a method for manufacturing a display device substrate according to the first to third embodiments will be described.

圖15為顯示本發明的一實施形態之顯示裝置基板的各製造步驟之部分剖面圖。 15 is a partial cross-sectional view showing each manufacturing step of a display device substrate according to an embodiment of the present invention.

如圖15所示,在透明基板15上,連續成膜包含氧化銦和氧化鋅和氧化錫之三元混合氧化物膜(導電性的複合氧化物層)即第1導電性金屬氧化物層1和金屬層2和第2導電氧化物層,以作成a所示的構成(成膜步驟)。 As shown in FIG. 15, on a transparent substrate 15, a ternary mixed oxide film (conductive composite oxide layer) including indium oxide, zinc oxide, and tin oxide (a conductive composite oxide layer) is continuously formed as a first conductive metal oxide layer 1. And the metal layer 2 and the second conductive oxide layer to have a structure shown in a (film formation step).

第1導電性金屬氧化物層1和金屬層2和第2導電性氧化物層3,係以大致覆蓋透明基板15的表面之方式形成有膜。成膜裝置係使用濺鍍裝置,在不破壞真空下連續地成膜。 The first conductive metal oxide layer 1, the metal layer 2, and the second conductive oxide layer 3 are each formed with a film so as to substantially cover the surface of the transparent substrate 15. The film forming apparatus uses a sputtering apparatus to continuously form a film without breaking vacuum.

第1導電性金屬氧化物層1和第2導電性金屬氧化物層3之各自的氧化銦和氧化鋅和氧化錫、及屬於銅合金之金屬層的組成係如下所示。任一者皆為混合氧化物中的金屬元素之原子百分比(沒有計算氧元素之只有金屬元素的計算。以下,以at%表記)。 The composition of each of the indium oxide, zinc oxide, and tin oxide of the first conductive metal oxide layer 1 and the second conductive metal oxide layer 3 and the metal layer of the copper alloy is shown below. Either of them is the atomic percentage of the metal element in the mixed oxide (the calculation of only the metal element without calculating the oxygen element. Hereinafter, it is expressed in at%).

‧第1導電性金屬氧化物層;In:Zn:Sn90:8:2 ‧First conductive metal oxide layer; In: Zn: Sn 90: 8: 2

‧第2導電性金屬氧化物層;In:Zn:Sn91:7:2 ‧Second conductive metal oxide layer; In: Zn: Sn 91: 7: 2

‧金屬層;Cu:Mg99.5:0.5 ‧Metal layer; Cu: Mg 99.5: 0.5

第1導電性金屬氧化物層1和第2導電性金屬氧化物層3所含之銦(In)的量必須含有比80at%還多。銦(In)的量係以多於80at%較佳。銦(In)的量係以多於90at%更佳。銦(In)的量係以多於90at%較佳。當銦(In)的量少於80at%時,所形成之導電性金屬氧化物層的電阻係數會變大,較不理想。當鋅(Zn)的量超過20at%時,導電性金屬氧化物(混合氧化物)的耐鹼性會降低,較不理想。 The amount of indium (In) contained in the first conductive metal oxide layer 1 and the second conductive metal oxide layer 3 must be more than 80 at%. The amount of indium (In) is preferably more than 80 at%. The amount of indium (In) is more preferably more than 90 at%. The amount of indium (In) is preferably more than 90 at%. When the amount of indium (In) is less than 80 at%, the resistivity of the formed conductive metal oxide layer becomes large, which is less desirable. When the amount of zinc (Zn) exceeds 20 at%, the alkali resistance of the conductive metal oxide (mixed oxide) is lowered, which is not preferable.

第1導電性金屬氧化物層1和第2導電性金屬氧化物層3所含之鋅(Zn)的量必須多於錫(Sn)的量。若錫的含量超過鋅含量,則在後續步驟的溼蝕刻中會發生不良。換言之,屬於銅或銅合金之金屬層的蝕刻變得容易從導電性金屬氧化物層進入,第1導電性金屬氧化物 層1和金屬層2和第2導電性金屬氧化物層3的線寬容易產生差異。 The amount of zinc (Zn) contained in the first conductive metal oxide layer 1 and the second conductive metal oxide layer 3 must be greater than the amount of tin (Sn). If the content of tin exceeds the content of zinc, defects may occur in the wet etching in the subsequent steps. In other words, the etching of a metal layer belonging to copper or a copper alloy becomes easier to enter from the conductive metal oxide layer, and the first conductive metal oxide The line widths of the layer 1 and the metal layer 2 and the second conductive metal oxide layer 3 are likely to be different.

第1導電性金屬氧化物層1和第2導電性金屬氧化物層3所含之錫(Sn)的量係以在0.5at%以上6at%以下的範圍內較佳。錫在與銦元素相比較之下,藉由使其含有0.5at%以上6at%以下,可減少上述銦和鋅和錫之三元系混合氧化物膜(導電性的複合氧化物層)的電阻係數。若錫的量超過7at%,伴隨著鋅的添加,三元混合氧化物膜(導電性的複合氧化物層)的電阻係數會變過大。藉由在上述的範圍內調整鋅及錫的量,可將電阻係數收斂在大約5×10-4Ωcm以上3×10-4Ωcm以下的小範圍內以作為混合氧化物膜之單層膜的電阻係數。也可在上述混合氧化物中添加少量的鈦、鋯、鎂、鋁、鍺等其他的元素。 The amount of tin (Sn) contained in the first conductive metal oxide layer 1 and the second conductive metal oxide layer 3 is preferably within a range from 0.5 at% to 6 at%. Compared with indium, tin contains 0.5at% to 6at% to reduce the resistance of the above-mentioned ternary mixed oxide film (conductive composite oxide layer) of indium, zinc and tin. coefficient. When the amount of tin exceeds 7 at%, the resistivity of the ternary mixed oxide film (conductive composite oxide layer) becomes excessively large with the addition of zinc. By adjusting the amount of zinc and tin within the above range, the resistivity can be converged to a small range of approximately 5 × 10 -4 Ωcm or more and 3 × 10 -4 Ωcm or less as a single-layer film of a mixed oxide film. Resistivity. A small amount of other elements such as titanium, zirconium, magnesium, aluminum, and germanium may be added to the mixed oxide.

接著,在透明基板15上,作為主要的色材,係塗布含有碳之具備鹼顯影性和感光性的黑色塗布液,並使之乾燥,而形成黑色層4,而形成b所示之構成(塗布步驟)。黑色層4的乾燥後的塗布膜厚為約1.1μm。 Next, on the transparent substrate 15, as a main color material, a black coating liquid containing alkali-developing property and photosensitivity containing carbon is applied and dried to form a black layer 4 to form a structure shown in b ( Coating step). The dried coating film thickness of the black layer 4 was about 1.1 μm.

接著,使用具備透過率100%的區域、透過率40%的端子部圖案的區域、和透過率0%的黑色配線圖案的區域之半色調光罩,將b所示之構成的基板曝光。此外,該遮罩的基板為人工石英基板,透過率係以該人工石英基板為基準(reference)的透過率。曝光後,進行鹼顯影,而作成c所示之構成(圖案形成步驟)。亦即,作成具有約2μm膜厚的黑色配線圖案4a和約1μm膜厚 的端子部圖案4b之基板。在此狀態下,第2導電性金屬氧化物層3係在黑色配線圖案4a間和基板周邊露出。 Next, using a half-tone mask including a region having a transmittance of 100%, a pattern of a terminal portion having a transmittance of 40%, and a region of a black wiring pattern having a transmittance of 0%, the substrate having the structure shown in b is exposed. In addition, the substrate of the mask is an artificial quartz substrate, and the transmittance is a transmittance based on the artificial quartz substrate as a reference. After exposure, alkali development is performed to produce a structure shown in c (pattern forming step). That is, a black wiring pattern 4a having a film thickness of about 2 μm and a film thickness of about 1 μm are prepared Of the terminal portion pattern 4b. In this state, the second conductive metal oxide layer 3 is exposed between the black wiring patterns 4 a and the periphery of the substrate.

接著,以草酸系蝕刻劑將露出的第2導電性金屬氧化物層3進行溼蝕刻,以磷酸系蝕刻劑將金屬層2進行溼蝕刻,再者,以草酸系蝕刻劑將第1導電性金屬氧化物層1進行溼蝕刻,而形成d所示之構成的基板(溼蝕刻步驟)。在此狀態下,去除黑色配線圖案4a間的第1導電性金屬氧化物層1、金屬層2及第2導電性金屬氧化物層3,在此區域使透明基板15露出。 Next, the exposed second conductive metal oxide layer 3 is wet-etched with an oxalic acid-based etchant, the metal layer 2 is wet-etched with a phosphoric acid-based etchant, and the first conductive metal is further etched with an oxalic acid-based etchant. The oxide layer 1 is subjected to wet etching to form a substrate having a structure shown in d (wet etching step). In this state, the first conductive metal oxide layer 1, the metal layer 2 and the second conductive metal oxide layer 3 between the black wiring patterns 4a are removed, and the transparent substrate 15 is exposed in this region.

接著,使用乾蝕刻裝置,以在黑色層的厚度蝕刻0.6μm的條件下進行乾蝕刻。導入乾蝕刻裝置的氣體,係在氬之基本氣體(base gas)加入8vol%的氧而成者。藉由乾蝕刻,使端子部5上的端子部圖案4b完全被去除,第2導電性金屬氧化物層3在端子部5露出,作成在黑色配線圖案上殘留有約0.5μm厚度的黑色層4之e所示之構成的基板(乾蝕刻步驟)。黑色配線圖案4a的線寬為約4μm,第1導電性金屬氧化物層1和金屬層和第2導電氧化物層的線寬係在±0.2μm以內,分別為等線寬。 Next, using a dry etching apparatus, dry etching was performed under the condition that the thickness of the black layer was etched by 0.6 μm. The gas introduced into the dry etching device is obtained by adding 8 vol% of oxygen to a base gas of argon. The terminal portion pattern 4b on the terminal portion 5 is completely removed by dry etching, the second conductive metal oxide layer 3 is exposed on the terminal portion 5, and a black layer 4 having a thickness of about 0.5 μm remains on the black wiring pattern A substrate having a structure shown by e (dry etching step). The line width of the black wiring pattern 4a is about 4 μm, and the line widths of the first conductive metal oxide layer 1 and the metal layer and the second conductive oxide layer are within ± 0.2 μm, which are equal line widths, respectively.

此外,在本實施形態的技術中,由於不需要黑色層4、第1導電性金屬氧化物層1、金屬層2和第2導電氧化物層3的對準(對位),所以也可不用考量在顯示裝置基板等中通常必要之各±1.5μm的對準邊際(alignment margin)。因此,可獲得高的開口率。 In addition, in the technology of this embodiment, since the alignment (alignment) of the black layer 4, the first conductive metal oxide layer 1, the metal layer 2, and the second conductive oxide layer 3 is not required, it is not necessary to use it. An alignment margin of ± 1.5 μm, which is usually necessary in a display device substrate or the like, is considered. Therefore, a high aperture ratio can be obtained.

此外,在此例中,雖然黑色配線6的第1導電性金屬氧化物層1的膜厚為約0.025μm,金屬層2的膜厚為約0.15μm,第1導電性金屬氧化物層1的膜厚為約0.025μm,惟包含黑色層4的膜厚在內,此等的膜厚可進行各種設定。 In this example, although the film thickness of the first conductive metal oxide layer 1 of the black wiring 6 is approximately 0.025 μm, and the film thickness of the metal layer 2 is approximately 0.15 μm, the thickness of the first conductive metal oxide layer 1 is approximately 0.15 μm. The film thickness is about 0.025 μm, but these film thicknesses can be variously set including the film thickness of the black layer 4.

使用於構成黑色配線6之黑色層4的色材,主要係以碳較理想。為了調整由黑色層4產生的反射色,亦可將有機顏料少量地添加於感光性黑色塗布液。然而,就許多的有機顏料而言,金屬係配位於顏料構造中。若將含有此種有機顏料的膜進行乾蝕刻,有時會發生因該金屬所致之污染(contamination)。考量到這點,而調整感光性黑色塗布液的摻合。或者,較佳為不含有機顏料,而僅為乾蝕刻性良好的碳之色材。含有較多有機顏料的黑色層,在乾蝕刻時會有產生大的表面粗糙之傾向。 The color material used for the black layer 4 constituting the black wiring 6 is mainly preferably carbon. In order to adjust the reflection color generated by the black layer 4, a small amount of an organic pigment may be added to the photosensitive black coating liquid. However, for many organic pigments, metal systems are incorporated in the pigment structure. If a film containing such an organic pigment is dry-etched, contamination by the metal may occur. Taking this into consideration, the blending of the photosensitive black coating liquid is adjusted. Alternatively, it is preferably a color material that does not contain an organic pigment and is only carbon with good dry etching properties. A black layer containing more organic pigments tends to have a large surface roughness during dry etching.

如上所述,在本實施形態之顯示裝置基板的製造方法中,使用光遮罩的步驟進行一次即完成,具有遮罩費用的降低和步驟的減少之優點。 As described above, in the method for manufacturing a display device substrate according to this embodiment, the steps using the light mask are performed once and then completed, which has the advantages of reducing the mask cost and the number of steps.

接著,說明關於第4實施形態之顯示裝置基板、顯示裝置及顯示裝置基板的製造方法。 Next, a display device substrate, a display device, and a method for manufacturing a display device substrate according to the fourth embodiment will be described.

圖16為第4實施形態之顯示裝置基板的部分剖面圖。 16 is a partial cross-sectional view of a display device substrate according to a fourth embodiment.

在本實施形態的顯示裝置基板中,在上述之第1實施形態的顯示裝置基板100的導電性金屬氧化物層1和金屬層2之界面,插入有黑色氧化物層8。此外, 本實施形態的顯示裝置基板係可提供作為上述的複數個實施態樣的變形例。 In the display device substrate of this embodiment, a black oxide layer 8 is inserted at the interface between the conductive metal oxide layer 1 and the metal layer 2 of the display device substrate 100 of the first embodiment described above. In addition, The display device substrate of this embodiment can provide a modification of the plurality of embodiments described above.

本實施形態的顯示裝置基板,係於第1導電性金屬氧化物層1和金屬層2的界面,具備有使金屬氧化之黑色氧化物層8。黑色氧化物層8係藉由能夠以吸收部分可視光之金屬氧化物形成。構成黑色氧化物層8的金屬氧化物,係可由具有各種光吸收性的金屬氧化物選擇,惟使用於金屬層的銅或銅合金的氧化物是較為簡便的。令此金屬氧化的黑色氧化物層8,係可藉由在濺鍍或離子鍍敷(ion plating)等的真空成膜時導入氧氣而容易地成膜。使用為黑色氧化物層8的材料之金屬,除了上述之外,亦可適用藉由將銅鎳合金、鈦合金等氧化而可賦予光吸收的功能之金屬材料。黑色氧化物層8的膜厚亦可設為例如10nm以上200nm以下。 The display device substrate of this embodiment is provided at the interface between the first conductive metal oxide layer 1 and the metal layer 2 and includes a black oxide layer 8 for oxidizing the metal. The black oxide layer 8 is formed of a metal oxide capable of absorbing part of visible light. The metal oxide constituting the black oxide layer 8 can be selected from metal oxides having various light absorption properties. However, an oxide of copper or a copper alloy used for the metal layer is relatively simple. The black oxide layer 8 that oxidizes the metal can be easily formed by introducing oxygen during vacuum film formation such as sputtering or ion plating. In addition to the above, the metal used as the material of the black oxide layer 8 may be a metal material that can provide a function of absorbing light by oxidizing a copper-nickel alloy, a titanium alloy, or the like. The film thickness of the black oxide layer 8 may be, for example, 10 nm to 200 nm.

此外,本實施形態中,以20nm膜厚形成有第1導電性金屬氧化物層,藉由以含鎂(Mg)0.5at%的銅鎂合金且以150nm的膜厚形成有金屬層2,又,以20nm膜厚的薄膜形成有第2導電性金屬氧化物層。第1及第2導電性金屬氧化物層,係藉由在室溫下濺鍍以非晶成膜,藉此可容易地進行溼蝕刻加工。金屬層2也可不是銅合金,而是以純銅形成。 In this embodiment, the first conductive metal oxide layer is formed with a film thickness of 20 nm, and the metal layer 2 is formed with a copper-magnesium alloy containing magnesium (Mg) at 0.5 at% and a film thickness of 150 nm. A second conductive metal oxide layer was formed in a thin film having a thickness of 20 nm. The first and second conductive metal oxide layers are formed into an amorphous film by sputtering at room temperature, whereby wet etching can be easily performed. The metal layer 2 may not be a copper alloy, but may be formed of pure copper.

在以金屬層作為黑色氧化物層8之情況,在藉由銅或銅合金的濺鍍等進行成膜時,導入氧氣而作成金屬氧化膜的手段在製造步驟上是簡便的。使用ITZO(In-Sn-Zn-O)的靶材將第1導電性金屬氧化物層濺 鍍成膜之後,使用銅合金的濺鍍靶材,再者,在氬氣進一步加入氧氣,以例如20nm以上200nm以下的膜厚將黑色氧化物層8成膜。接著,停止僅導入氧氣,僅以氬氣,以銅合金成膜金屬層2。接著,不破壞真空,與第1導電性金屬氧化物層1同樣地使用ITZO(In-Sn-Zn-O)的靶材,將第2導電性金屬氧化物層3濺鍍成膜,藉此可依第1導電性金屬氧化物層1/黑色氧化物層8/金屬層2/第2導電性金屬氧化物層3的順序成膜。 In the case where a metal layer is used as the black oxide layer 8, when forming a film by sputtering or the like of copper or a copper alloy, a method of forming a metal oxide film by introducing oxygen is simple in manufacturing steps. The first conductive metal oxide layer was sputtered using a target of ITZO (In-Sn-Zn-O) After being formed into a film, a sputtering target of a copper alloy is used, and further oxygen is added to argon to form a black oxide layer 8 with a thickness of, for example, 20 nm to 200 nm. Next, the introduction of only oxygen, and the use of only argon to stop forming the metal layer 2 with a copper alloy was stopped. Next, the second conductive metal oxide layer 3 was sputtered into a film using a target of ITZO (In-Sn-Zn-O) in the same manner as the first conductive metal oxide layer 1 without breaking the vacuum. The film can be formed in the order of the first conductive metal oxide layer 1 / the black oxide layer 8 / the metal layer 2 / the second conductive metal oxide layer 3.

以上述方式成膜後,與上述的第1至第3實施形態的製造方法同樣,使用半色調光罩進行曝光,進行鹼顯影、溼蝕刻後,再進行乾蝕刻,而可形成本實施形態的顯示裝置基板。 After the film is formed in the above manner, as in the manufacturing methods of the first to third embodiments described above, exposure is performed using a half-tone mask, alkali development, wet etching, and then dry etching are performed to form a film of this embodiment. Display device substrate.

例如,在圖6所示的顯示裝置中,當從觀察者方向V觀看時,會有來自金屬層2的光反射(室內光或太陽光等外面光線的反射),而有降低可視性的情況。本實施形態中,藉由將黑色氧化物層8插入第1導電性金屬氧化物層1與金屬層2的界面,可抑制上述的光反射。 For example, in the display device shown in FIG. 6, when viewed from the viewer's direction V, light reflection from the metal layer 2 (reflection of outside light such as indoor light or sunlight) may occur, and visibility may be reduced. . In this embodiment, the above-mentioned light reflection can be suppressed by inserting the black oxide layer 8 into the interface between the first conductive metal oxide layer 1 and the metal layer 2.

亦即,根據本實施形態的顯示裝置基板、顯示裝置及顯示裝置基板的製造方法,可得到與上述的實施形態同樣的效果,並且可進一步避免可視性的降低。 That is, according to the display device substrate, the display device, and the method for manufacturing a display device substrate according to this embodiment, the same effects as those of the above embodiment can be obtained, and a decrease in visibility can be further avoided.

接著,說明關於第5實施形態之顯示裝置基板,顯示裝置及顯示裝置基板的製造方法。 Next, a display device substrate according to a fifth embodiment, a display device, and a method for manufacturing a display device substrate will be described.

圖17為第5實施形態之顯示裝置基板的部分剖面圖。 FIG. 17 is a partial cross-sectional view of a display device substrate according to a fifth embodiment.

本實施形態的顯示裝置基板,係例如在圖1所示之顯示裝置基板的透明基板15和第1導電性金屬氧化物層1之間,配置有第2黑色層18。本實施形態的顯示裝置基板,係可提供作為上述的複數個實施態樣的變形例。 The display device substrate of this embodiment is, for example, a second black layer 18 disposed between the transparent substrate 15 and the first conductive metal oxide layer 1 of the display device substrate shown in FIG. 1. The display device substrate of this embodiment can be provided as a modification of the plurality of embodiments described above.

在第2黑色層18的形成方面,係可使用與黑色層4同樣的色材、透明樹脂。透明基板15和第2黑色層18之界面的反射率,係可藉由其色材的量、膜厚的調整,而在光的可視區域抑制為3%以下。 In forming the second black layer 18, the same color material and transparent resin as the black layer 4 can be used. The reflectance at the interface between the transparent substrate 15 and the second black layer 18 can be suppressed to 3% or less in the visible region of light by adjusting the amount of color material and the thickness of the film.

本實施形態的製造方法與上述第4實施形態的差異僅在於係加入第2黑色層18的塗布和其硬膜步驟作為最初的步驟,其餘主要步驟係與第4實施形態相同。 The manufacturing method of this embodiment differs from the fourth embodiment only in that the coating of the second black layer 18 and the hard film step are added as the initial steps, and the remaining main steps are the same as those of the fourth embodiment.

圖18為顯示本發明的一實施形態之顯示裝置基板的各個的製造步驟之部分剖面圖。 18 is a partial cross-sectional view showing each manufacturing step of a display device substrate according to an embodiment of the present invention.

如圖18的o所示,在透明基板15上塗布第2黑色層18並使其硬膜化。硬膜化亦可併用光,惟以例如250℃的熱處理使其硬膜化較為簡便。第2黑色層18的材料亦可為與第1實施形態的黑色層4相同的材料。在本實施形態中,第2黑色層18的膜厚設為約0.5μm。 As shown in o of FIG. 18, the second black layer 18 is coated on the transparent substrate 15 and hardened. The hard coating may be used in combination with light, but it is simpler to harden the coating by, for example, a heat treatment at 250 ° C. The material of the second black layer 18 may be the same as that of the black layer 4 of the first embodiment. In this embodiment, the film thickness of the second black layer 18 is set to about 0.5 μm.

如圖18的a至c所示的步驟,係與上述第1至第3實施形態的顯示裝置的製造方法相同。 The steps shown in a to c of FIG. 18 are the same as the manufacturing method of the display device according to the first to third embodiments.

圖18的d所示之黑色配線圖案4a的膜厚為1.1μm,相當於半色調光罩的40%透過率部分的端子部5之端子部圖案4b的膜厚為0.5μm。在圖18的d所示之黑色配線圖案4a的圖案間露出之第2黑色層18的膜厚 為0.5μm。對於此狀態的顯示裝置基板,將乾蝕刻量設為0.6μm,可將在相當於端子部5的端子部圖案4b和黑色配線圖案4a的圖案間露出之第2黑色層18藉由乾蝕刻步驟完全地去除。圖18的e所示的顯示裝置基板,係為已進行了此乾蝕刻步驟的顯示裝置基板。 The film thickness of the black wiring pattern 4a shown in FIG. 18D is 1.1 μm, and the film thickness of the terminal portion pattern 4b of the terminal portion 5 corresponding to the 40% transmittance portion of the halftone mask is 0.5 μm. The thickness of the second black layer 18 exposed between the patterns of the black wiring patterns 4a shown in d of FIG. 18 It was 0.5 μm. For the display device substrate in this state, by setting the dry etching amount to 0.6 μm, the second black layer 18 exposed between the pattern corresponding to the terminal portion pattern 4b and the black wiring pattern 4a of the terminal portion 5 can be subjected to a dry etching step. Remove completely. The display device substrate shown in e in FIG. 18 is a display device substrate that has been subjected to this dry etching step.

例如在圖6所示的液晶顯示裝置中,從觀察者方向V觀看時,會有來自金屬層2的光反射(室內光、太陽光等外面光線的反射),而造成可視性降低之情況。在本實施形態的實施形態中,在透明基板15和第1導電性金屬氧化物層1之間加入第2黑色層18的構成中,從觀察者方向V觀看時,由於可將透明基板15和第2黑色層18之界面的光的反射率設為3%以下,所以由可視性觀點來看,可以說是優異的構成。 For example, in the liquid crystal display device shown in FIG. 6, when viewed from the direction V of the viewer, light reflection from the metal layer 2 (reflection of external light such as indoor light and sunlight) may result in reduced visibility. In this embodiment, the second black layer 18 is added between the transparent substrate 15 and the first conductive metal oxide layer 1. When viewed from the direction V of the viewer, the transparent substrate 15 and Since the reflectance of light at the interface of the second black layer 18 is 3% or less, it can be said that it has an excellent structure from the viewpoint of visibility.

亦即,根據本實施形態的顯示裝置基板、顯示裝置及顯示裝置基板的製造方法,可得到與上述的實施形態同樣的效果,並且可進一步避免可視性的降低。 That is, according to the display device substrate, the display device, and the method for manufacturing a display device substrate according to this embodiment, the same effects as those of the above embodiment can be obtained, and a decrease in visibility can be further avoided.

接著,說明關於第6實施形態的顯示裝置基板、顯示裝置、及顯示裝置基板的製造方法。 Next, a display device substrate, a display device, and a method for manufacturing a display device substrate according to a sixth embodiment will be described.

圖19是用以說明第6實施形態之顯示裝置基板的圖,是黑色配線6、與彩色濾光片層的紅像素R、綠像素G、藍像素B配設於不同的面之顯示裝置基板的部分剖面圖。 FIG. 19 is a diagram for explaining a display device substrate according to a sixth embodiment, and is a display device substrate in which black wirings 6 and red pixels R, green pixels G, and blue pixels B of a color filter layer are disposed on different surfaces; FIG. Partial sectional view.

本實施形態的顯示裝置基板100具有透明基板15、黑色配線6、黑色矩陣BM、彩色濾光片層(紅像素R、綠像素G、藍像素B)和透明樹脂層9。 The display device substrate 100 of this embodiment includes a transparent substrate 15, black wirings 6, a black matrix BM, a color filter layer (red pixels R, green pixels G, and blue pixels B) and a transparent resin layer 9.

在包含本實施形態在內之在此所說明的複數個實施形態的顯示裝置中,可適用在顯示裝置基板表面(在液晶顯示裝置中為偏向板的上方),透過接著劑等黏貼有強度補強用之覆蓋玻璃或偏光板的構成。 In the display device of the plurality of embodiments described herein including this embodiment, it can be applied to the surface of the display device substrate (upward of the deflection plate in the liquid crystal display device), and the strength can be adhered through an adhesive or the like. Structure that covers glass or polarizer.

以本實施形態的顯示裝置基板的變形例而言,黑色配線6與彩色濾光片層係配設在透明基板15之不同面的上層。亦即,透明基板15具有對向的一對主面,在一方的主面上配置有黑色配線6,在另一方的主面上配置有彩色濾光片層。本實施態樣中,彩色濾光片層位於液晶層側,隔著透明基板15,黑色配線6則位於黑色層4可由觀察者方向V辨識的位置。 In a modified example of the display device substrate of the present embodiment, the black wiring 6 and the color filter layer are disposed on upper layers on different surfaces of the transparent substrate 15. That is, the transparent substrate 15 has a pair of main surfaces facing each other, a black wiring 6 is arranged on one main surface, and a color filter layer is arranged on the other main surface. In this embodiment, the color filter layer is located on the liquid crystal layer side, and the black wiring 6 is located at the position where the black layer 4 can be recognized by the observer V through the transparent substrate 15.

黑色層4的表面係例如隔著接著劑而由偏光板(未圖示)等所覆蓋。於此情況,與黑色層4的表面被空氣覆蓋時相比較,黑色層4本身的表面反射成為約一半的反射率。例如接著劑的折射率為約1.5。黑色層4與接著劑之界面的反射率,係在光的波長400nm以上700nm以下的可視區域成為3%以下的低反射率。此外,反射率的測定,係使用顯微分光計,基準(reference)為鋁板。 The surface of the black layer 4 is covered with, for example, a polarizing plate (not shown) via an adhesive. In this case, as compared with when the surface of the black layer 4 is covered with air, the surface reflection of the black layer 4 itself becomes approximately half the reflectance. For example, the refractive index of the adhesive is about 1.5. The reflectance at the interface between the black layer 4 and the adhesive is a low reflectance of 3% or less in a visible region with a wavelength of light of 400 nm to 700 nm. In addition, the reflectance was measured using a micro spectrometer, and the reference was an aluminum plate.

黑色矩陣BM係在透明基板15上配置成格子狀。黑色矩陣BM之延伸於Y方向的部分,係隔著透明基板15與黑色配線6相對向。本實施形態的顯示裝置基板之上述以外的構成,係為與第1實施形態的顯示裝置基板同樣的構成。 The black matrix BM is arranged in a grid pattern on the transparent substrate 15. The portion of the black matrix BM extending in the Y direction is opposed to the black wiring 6 through the transparent substrate 15. The structure of the display device substrate of this embodiment other than the above is the same as that of the display device substrate of the first embodiment.

圖20為具備圖19所示的顯示裝置基板之一實施形態的顯示裝置的部分剖面圖。 20 is a partial cross-sectional view of a display device including an embodiment of the display device substrate shown in FIG. 19.

陣列基板35及液晶層30的構成,除了觸控金屬配線37的構成以外,其餘係與上述的第1實施形態的顯示裝置同樣。觸控金屬配線37,係可與例如未圖示之電晶體(主動元件)的閘極電極或源極電極(或汲極電極)在相同的金屬配線的製造步驟同時形成。 The configurations of the array substrate 35 and the liquid crystal layer 30 are the same as those of the display device according to the first embodiment described above, except for the configuration of the touch metal wiring 37. The touch metal wiring 37 can be formed simultaneously with, for example, a gate electrode or a source electrode (or a drain electrode) of a transistor (active element) (not shown) in the same metal wiring manufacturing step.

液晶層30係可藉由施加於陣列基板35所具備的像素電極36和共同電極32的電壓所產生之電場來進行配向控制。液晶驅動係與第1實施形態相同的FFS方式,液晶層30係進行與陣列基板35的面平行的配向。 The liquid crystal layer 30 can be aligned and controlled by an electric field generated by a voltage applied to the pixel electrode 36 and the common electrode 32 included in the array substrate 35. The liquid crystal driving system is the same FFS method as the first embodiment, and the liquid crystal layer 30 is aligned parallel to the surface of the array substrate 35.

本實施形態的液晶顯示裝置中,觸控感測用的靜電電容C4,係形成於黑色配線6和配置在陣列基板35的觸控金屬配線37之間。在電晶體為頂部閘極(top-gate)構造的情況,亦可以金屬層而與觸控金屬配線37同時形成,該金屬層係形成覆蓋(cover)電晶體的通道層之遮光層。省略了圖示的主動元件的通道層,係可使用氧化物半導體或多晶矽半導體。 In the liquid crystal display device of this embodiment, the capacitance C4 for touch sensing is formed between the black wiring 6 and the touch metal wiring 37 arranged on the array substrate 35. When the transistor is a top-gate structure, a metal layer may be formed at the same time as the touch metal wiring 37, and the metal layer forms a light-shielding layer covering a channel layer of the transistor. The channel layer of the active device is omitted, and an oxide semiconductor or a polycrystalline silicon semiconductor can be used.

黑色配線6和觸控金屬配線37在觸控感測驅動中,檢測電極和驅動電極的角色亦可替換使用。 In the touch sensing driving, the black wiring 6 and the touch metal wiring 37 can also be used as the detection electrodes and the driving electrodes.

此外,在本實施形態中,由於在透明基板15形成黑色配線6的方法係與第1至第3實施形態同樣,故省略說明。 In addition, in this embodiment, since the method of forming the black wiring 6 on the transparent substrate 15 is the same as that of the first to third embodiments, the description is omitted.

根據本實施形態的顯示裝置基板、顯示裝置及顯示裝置基板的製造方法,可獲得與上述的實施形態同樣的效果。 According to the display device substrate, the display device, and the method for manufacturing a display device substrate of this embodiment, it is possible to obtain the same effects as those of the above embodiment.

接著,說明關於第7實施形態之顯示裝置基板、顯示裝置及顯示裝置基板的製造方法。 Next, a display device substrate, a display device, and a method for manufacturing a display device substrate according to a seventh embodiment will be described.

圖21為用以說明第7實施形態之顯示裝置基板的圖,其是黑色配線6與彩色濾光片層的紅像素R、綠像素G、藍像素B配設於不同的面之顯示裝置基板的部分剖面圖。 FIG. 21 is a diagram for explaining a display device substrate according to a seventh embodiment, and is a display device substrate in which the black wiring 6 and the red pixels R, green pixels G, and blue pixels B of the color filter layer are disposed on different surfaces. Partial sectional view.

本實施形態的顯示裝置基板200,除了進一步具有配置於透明樹脂層9上的透明導電膜配線7這點以外,其餘係與圖19所示的顯示裝置基板100同樣的構成。 The display device substrate 200 according to this embodiment has the same configuration as the display device substrate 100 shown in FIG. 19 except that it further includes a transparent conductive film wiring 7 disposed on the transparent resin layer 9.

圖22為具備圖21所示的顯示裝置基板之一實施形態的顯示裝置的部分剖面圖。此外,在圖22中,省略了偏光板、相位差板、配向膜、背光單元、與電晶體即主動元件連接之閘極線和源極線等的表記。 22 is a partial cross-sectional view of a display device including an embodiment of a display device substrate shown in FIG. 21. In addition, in FIG. 22, the designations of a polarizing plate, a retardation plate, an alignment film, a backlight unit, a gate line and a source line connected to a transistor, that is, an active element, are omitted.

本實施形態之顯示裝置的陣列基板45及液晶層30,係為例如與圖13所示之第2實施形態的顯示裝置中的陣列基板45同樣的構成。亦即,液晶層30係藉由施加於像素電極36、和屬於共同電極的透明導電膜配線7之間的電壓被驅動。施加於像素電極36和透明導電膜配線7之間的液晶驅動電壓,係施加於Z方向(液晶層30的厚度方向)之所謂的縱電場。透明導電膜配線7係以被稱為ITO的透明導電膜形成。 The array substrate 45 and the liquid crystal layer 30 of the display device of this embodiment have the same configuration as the array substrate 45 of the display device of the second embodiment shown in FIG. 13, for example. That is, the liquid crystal layer 30 is driven by a voltage applied between the pixel electrode 36 and the transparent conductive film wiring 7 which is a common electrode. The liquid crystal driving voltage applied between the pixel electrode 36 and the transparent conductive film wiring 7 is a so-called vertical electric field applied in the Z direction (thickness direction of the liquid crystal layer 30). The transparent conductive film wiring 7 is formed of a transparent conductive film called ITO.

有關觸控感測的靜電電容C5,係形成於例如黑色配線6和透明導電膜配線7之間。黑色配線6的排列係在相對於紙面垂直的Y方向上以條狀圖案形狀配 列。由觀察者方向V觀看到的顯示裝置基板200的平面視圖係與圖14同樣。省略了圖示之主動元件的通道層,係可使用氧化物半導體或多晶矽半導體。 The capacitance C5 related to touch sensing is formed between, for example, the black wiring 6 and the transparent conductive film wiring 7. The arrangement of the black wirings 6 is arranged in a stripe pattern shape in the Y direction perpendicular to the paper surface. Column. A plan view of the display device substrate 200 viewed from the viewer direction V is the same as that of FIG. 14. The channel layer of the active device is omitted, and an oxide semiconductor or a polycrystalline silicon semiconductor can be used.

根據本實施形態的顯示裝置基板、顯示裝置及顯示裝置基板的製造方法,可得到與上述的實施形態同樣的效果。 According to the display device substrate, the display device, and the method for manufacturing a display device substrate of this embodiment, the same effects as those of the above embodiment can be obtained.

亦即,根據上述的複數個實施形態,可提供一種具備在與屬於無鹼玻璃的基板密接性高的狀態且能夠降低由背光源等顯示裝置的光源發出之光的再反射之觸控感測用配線之顯示裝置基板,該觸控感測用配線為低電阻且具抗鹼性的黑色配線。 That is, according to the plurality of embodiments described above, it is possible to provide a touch sensing that is capable of reducing the re-reflection of light emitted from a light source of a display device such as a backlight in a state of high adhesion to a substrate belonging to alkali-free glass. A display device substrate with wiring, and the touch sensing wiring is a low-resistance and alkali-resistant black wiring.

又,根據上述的複數個實施形態,可提供高解析度且能夠因應高速的觸控輸入之顯示裝置、以及使用於該顯示裝置之顯示裝置基板、具備彩色濾光片的顯示裝置基板。 In addition, according to the plurality of embodiments described above, it is possible to provide a display device with high resolution and capable of responding to high-speed touch input, a display device substrate used for the display device, and a display device substrate provided with a color filter.

又,根據上述的複數個實施形態,可提供能進行穩定的電性安裝之顯示裝置基板。 In addition, according to the plurality of embodiments described above, it is possible to provide a display device substrate capable of stable electrical mounting.

上述的複數個實施形態的顯示裝置基板、顯示裝置及顯示裝置基板的製造方法,係可在不改變發明的宗旨的範圍內進行各式各樣的變更來應用。 The display device substrate, the display device, and the method for manufacturing a display device substrate of the plurality of embodiments described above can be applied in various changes without changing the spirit of the invention.

例如,上述的複數個實施形態的顯示裝置係能夠有各種應用。就上述複數個實施形態的顯示裝置能夠作為對象的電子機器而言,可舉出行動電話、可攜式遊戲機、個人數位助理、個人電腦、電子書、攝影機(video camera)、數位相機(digital still camera)、頭戴式 (head-mounted)顯示器、導航系統(navigation system)、聲音播放裝置(汽車音響(car audio)、數位聲訊播放器(digital audio player)等)、影印機、傳真機、印表機、多功能事務機、自動販賣機、自動櫃員機(ATM)、個人認證裝置、光通訊機器等。上述各實施形態係能夠自由組合使用。 For example, the display device of the plurality of embodiments described above can have various applications. Examples of electronic devices that can be used as the display device of the plurality of embodiments include mobile phones, portable game consoles, personal digital assistants, personal computers, e-books, video cameras, and digital cameras. still camera), headset (head-mounted) displays, navigation systems, sound playback devices (car audio, digital audio player, etc.), photocopiers, fax machines, printers, multi-function business Machine, automatic vending machine, automatic teller machine (ATM), personal authentication device, optical communication device, etc. Each of the above embodiments can be used in any combination.

總之,本發明並不限定於上述實施形態,在實施段階中不脫離其要旨的範圍內可將構成要素變形而具體化。又,藉由將上述實施形態所揭示之複數個構成要素適當地組合,可形成各種發明。例如,亦可從實施形態所示之所有的構成要素刪除幾個構成要素。再者,亦可將不同實施形態的構成要素適當地組合。 In short, the present invention is not limited to the embodiment described above, and the constituent elements can be modified and embodied within a range that does not depart from the gist of the implementation stage. In addition, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above embodiments. For example, several constituent elements may be deleted from all the constituent elements shown in the embodiment. Furthermore, constituent elements of different embodiments may be appropriately combined.

Claims (15)

一種顯示裝置基板,其係具備:透明基板,該透明基板為無鹼玻璃;及黑色配線,其係在前述透明基板上,配置於複數個像素間,且包含第1導電性金屬氧化物層、配置於前述第1導電性金屬氧化物層上的金屬層、配置於前述金屬層上的第2導電性金屬氧化物層、和配置於前述第2導電性金屬氧化物層上的黑色層;前述黑色配線係延伸於第1方向,在與前述第1方向大致正交的第2方向隔著既定間隔配置有複數條前述黑色配線;前述黑色配線包含引繞配線,該引繞配線係在延伸至包含前述複數個像素的顯示區域之外部,且在端部具備露出了前述第2導電性金屬氧化物層的端子部;前述金屬層係由銅或銅合金形成;前述黑色層係以碳作為主要的色材;前述第1及第2導電性金屬氧化物層係由氧化銦和氧化鋅和氧化錫的混合氧化物形成;前述第1導電性金屬氧化物層、前述金屬層、前述第2導電性金屬氧化物層及前述黑色層係為等線寬。A display device substrate includes a transparent substrate, which is an alkali-free glass, and black wiring, which is arranged on the transparent substrate, is disposed between a plurality of pixels, and includes a first conductive metal oxide layer, A metal layer disposed on the first conductive metal oxide layer, a second conductive metal oxide layer disposed on the metal layer, and a black layer disposed on the second conductive metal oxide layer; The black wiring is extended in the first direction, and a plurality of the black wirings are arranged at a predetermined interval in the second direction that is substantially orthogonal to the first direction. The black wiring includes a routing wire, and the routing wire extends to The outside of the display area including the plurality of pixels, and a terminal portion exposing the second conductive metal oxide layer is provided at an end portion; the metal layer is formed of copper or a copper alloy; and the black layer is mainly composed of carbon. Color material; the first and second conductive metal oxide layers are formed of a mixed oxide of indium oxide and zinc oxide and tin oxide; the first conductive metal oxide layer The metal layer, the second conductive metal oxide layer and the black layer system is line width and the like. 如請求項1之顯示裝置基板,其中以包含於前述混合氧化物之銦(In)和鋅(Zn)和錫(Sn)的In/(In+Zn+Sn)表示的原子比係大於0.8,且Zn/Sn的原子比大於1。For example, the display device substrate of claim 1, wherein the atomic ratio represented by In / (In + Zn + Sn) of indium (In) and zinc (Zn) and tin (Sn) contained in the foregoing mixed oxide is greater than 0.8, And the atomic ratio of Zn / Sn is greater than 1. 如請求項1之顯示裝置基板,其中包含於前述黑色層之碳的含量係在4質量%以上50質量%以下的範圍內。For example, the display device substrate of claim 1, wherein the content of carbon contained in the black layer is within a range of 4% by mass to 50% by mass. 如請求項1之顯示裝置基板,其中在前述第1導電性金屬氧化物層和前述金屬層的界面,進一步包含使金屬氧化的黑色氧化物層。The display device substrate according to claim 1, further comprising a black oxide layer for oxidizing a metal at an interface between the first conductive metal oxide layer and the metal layer. 如請求項1之顯示裝置基板,其中在前述透明基板與前述第1導電性金屬氧化物層的界面,進一步具備第2黑色層,前述第2黑色層係與前述黑色配線為等線寬。The display device substrate according to claim 1, further comprising a second black layer at an interface between the transparent substrate and the first conductive metal oxide layer, and the second black layer has an equal line width with the black wiring. 如請求項1之顯示裝置基板,其中以至少覆蓋前述顯示區域的方式,在前述黑色配線上積層有透明樹脂層。The display device substrate according to claim 1, wherein a transparent resin layer is laminated on the black wiring so as to cover at least the display area. 如請求項1之顯示裝置基板,其中,在前述黑色配線的上層,積層有彩色濾光片層及透明樹脂層,該彩色濾光片層包含配置於前述複數個像素的每一者之紅色的著色層、藍色的著色層及綠色的著色層,該透明樹脂層係在前述彩色濾光片層上覆蓋前述顯示區域。For example, the display device substrate of claim 1, wherein a color filter layer and a transparent resin layer are laminated on the upper layer of the black wiring, and the color filter layer includes a red color filter disposed on each of the plurality of pixels. The colored layer, the blue colored layer, and the green colored layer, and the transparent resin layer covers the display area on the color filter layer. 一種顯示裝置基板的製造方法,該顯示裝置基板具備黑色配線,該黑色配線係在屬於無鹼玻璃的透明基板上具備複數個像素之顯示區域,區分前述複數個像素,且在延伸至前述顯示區域外的端部具有端子部,該顯示裝置基板的製造方法具備:成膜步驟,係在屬於無鹼玻璃的透明基板上形成第1導電性金屬氧化物層、由銅層或銅合金層所構成的金屬層、和第2導電性金屬氧化物層;塗布步驟,係至少將包含碳和鹼可溶性丙烯酸樹脂的黑色感光液塗布於前述第2導電性金屬氧化物層上,並使其乾燥而作成黑色膜;黑色膜的圖案形成步驟,係藉由具備前述黑色配線的第1圖案、和透光率與前述第1圖案不同之前述端子部的第2圖案之半色調光罩進行曝光,且使用鹼性顯影液將透明基板上的前述黑色膜選擇性地去除,並且殘留厚的黑色膜作為前述黑色配線的圖案,形成薄的黑色膜作為前述端子部的圖案;溼蝕刻步驟,係藉由溼蝕刻法將未被前述第1導電性金屬氧化物層、由前述銅層或銅合金層所構成的金屬層、和前述第2導電性金屬氧化物層之3層黑色膜覆蓋的部分加以去除;及乾蝕刻步驟,係藉由乾蝕刻法將厚的黑色膜的表面的一部分於膜厚方向加以去除以作為前述黑色配線的圖案,並且將薄的黑色膜去除以作為前述端子部的圖案,以使前述端子部之第2導電氧化物層的表面露出;在前述透明基板上形成黑色配線,該黑色配線係將第1導電性金屬氧化物層、由銅層或銅合金層所構成的金屬層、第2導電性金屬氧化物層和以碳為主要色材的黑色層依序分別以等線寬積層而成。A method for manufacturing a display device substrate. The display device substrate is provided with black wiring. The black wiring is provided with a display area of a plurality of pixels on a transparent substrate belonging to an alkali-free glass. The plurality of pixels are distinguished and extended to the display area. The outer end portion has a terminal portion, and the method for manufacturing a display device substrate includes a film forming step of forming a first conductive metal oxide layer on a transparent substrate belonging to an alkali-free glass and consisting of a copper layer or a copper alloy layer A metal layer and a second conductive metal oxide layer; the coating step includes coating a black photosensitive liquid containing at least carbon and an alkali-soluble acrylic resin on the second conductive metal oxide layer and drying it to produce Black film; the pattern forming step of the black film is performed by using a half-tone mask provided with the first pattern of the black wiring and the second pattern of the terminal portion having a light transmittance different from that of the first pattern, and using The alkaline developing solution selectively removes the black film on the transparent substrate, and a thick black film remains as a pattern of the black wiring. Forming a thin black film as a pattern of the terminal portion; the wet etching step is to wet-etch a metal layer that is not formed of the first conductive metal oxide layer, the copper layer or the copper alloy layer, and The part covered by the three black films of the second conductive metal oxide layer is removed; and in the dry etching step, a part of the surface of the thick black film is removed in the film thickness direction by the dry etching method to be used as the black color. Pattern of the wiring, and the thin black film is removed as the pattern of the terminal portion so that the surface of the second conductive oxide layer of the terminal portion is exposed; black wiring is formed on the transparent substrate, and the black wiring is the first 1 A conductive metal oxide layer, a metal layer composed of a copper layer or a copper alloy layer, a second conductive metal oxide layer, and a black layer mainly composed of carbon are sequentially laminated with a constant line width. 一種顯示裝置,其係具備:如請求項1至7中任一項之顯示裝置基板、與前述顯示裝置基板相對向而固定的陣列基板、和配置在前述顯示裝置基板和前述陣列基板之間的液晶層,前述陣列基板係在平面視圖中,具備:配置在複數個像素的鄰接位置及與前述黑色配線重疊的位置之主動元件;與前述主動元件電性連接的金屬配線;以及在與前述黑色配線交叉的方向延伸的觸控金屬配線。A display device includes the display device substrate according to any one of claims 1 to 7, an array substrate fixed opposite to the display device substrate, and a display device disposed between the display device substrate and the array substrate. In the liquid crystal layer, the array substrate is in a plan view, and includes: an active element disposed adjacent to a plurality of pixels and overlapping the black wiring; a metal wiring electrically connected to the active element; and Touch metal wiring extending in a direction where the wiring crosses. 如請求項9之顯示裝置,其中前述主動元件係具備通道層的電晶體,該通道層係以鎵、銦、鋅、錫、鍺、鎂、鋁之2種以上的混合金屬氧化物形成。The display device according to claim 9, wherein the active element is a transistor having a channel layer, and the channel layer is formed of two or more mixed metal oxides of gallium, indium, zinc, tin, germanium, magnesium, and aluminum. 如請求項10之顯示裝置,其中,前述陣列基板進一步具備覆蓋前述通道層的遮光圖案,前述觸控金屬配線與前述遮光圖案係配置在同一層。The display device according to claim 10, wherein the array substrate further includes a light shielding pattern covering the channel layer, and the touch metal wiring and the light shielding pattern are arranged on a same layer. 如請求項9之顯示裝置,其中前述液晶層的配向係與前述陣列基板的面平行。The display device according to claim 9, wherein the alignment system of the liquid crystal layer is parallel to the surface of the array substrate. 一種顯示裝置,其係將請求項6或7之顯示裝置基板與陣列基板以相面對的方式隔著液晶層貼合,前述顯示裝置基板係在於平面視圖中,於前述透明樹脂層上進一步具備與前述黑色配線交叉的複數個透明導電膜配線,前述陣列基板係在平面視圖中,於複數個像素的鄰接位置及與前述黑色配線重疊的位置具有主動元件。A display device includes a display device substrate of claim 6 or 7 and an array substrate bonded to each other across a liquid crystal layer. The display device substrate is in a plan view and further provided on the transparent resin layer. The plurality of transparent conductive film wirings intersecting the black wirings, and the array substrate has an active element at a position adjacent to the plurality of pixels and a position overlapping the black wirings in a plan view. 如請求項13之顯示裝置,其中前述主動元件係具備通道層的電晶體,該通道層係以鎵、銦、鋅、錫、鍺、鎂、鋁之2種以上的混合金屬氧化物形成。The display device according to claim 13, wherein the active element is a transistor having a channel layer, and the channel layer is formed of two or more mixed metal oxides of gallium, indium, zinc, tin, germanium, magnesium, and aluminum. 如請求項13之顯示裝置,其中前述液晶層的配向係與前述陣列基板的面垂直。The display device according to claim 13, wherein the alignment system of the liquid crystal layer is perpendicular to the surface of the array substrate.
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