TWI656363B - Ultra-violet composite grating and plasma device - Google Patents

Ultra-violet composite grating and plasma device Download PDF

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TWI656363B
TWI656363B TW106128161A TW106128161A TWI656363B TW I656363 B TWI656363 B TW I656363B TW 106128161 A TW106128161 A TW 106128161A TW 106128161 A TW106128161 A TW 106128161A TW I656363 B TWI656363 B TW I656363B
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grid
perforations
composite grating
perforation
grille
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TW201913148A (en
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薛仁傑
蘇慶忠
盧玠甫
盧竹佑
于隆基
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台灣積體電路製造股份有限公司
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Abstract

本揭露有關於一種紫外光複合光柵及電漿裝置。此紫外光複合光柵包含第一格柵及第二格柵。第一格柵設有複數個第一穿孔,及第二格柵設有複數個第二穿孔,且第一穿孔及第二穿孔係交錯設置。第一格柵係由不透光材料所製成,且第二格柵係由濾光材料所製成。紫外光複合光柵可濾除波長小於180nm之紫外光。 This disclosure relates to an ultraviolet light composite grating and a plasma device. The ultraviolet light composite grating includes a first grid and a second grid. The first grille is provided with a plurality of first perforations, and the second grille is provided with a plurality of second perforations, and the first perforations and the second perforations are arranged alternately. The first grid is made of an opaque material, and the second grid is made of a filter material. Ultraviolet composite grating can filter out ultraviolet light with a wavelength less than 180nm.

Description

紫外光複合光柵及電漿裝置 Ultraviolet composite grating and plasma device

本揭露係有關一種紫外光複合光柵,且特別是提供一種適用於電漿裝置之紫外光複合光柵。 This disclosure relates to an ultraviolet composite grating, and in particular, to an ultraviolet composite grating suitable for a plasma device.

半導體材料之發展驅使半導體裝置之大幅成長。為了提升半導體裝置之裝置密度與效能,並降低其成本,半導體裝置中各層薄膜之堆疊、表面性質與結構設計均係被積極地研究發展。為了形成不同之設計結構,蝕刻製程係常用之製程技術,其中蝕刻製程包含覆蓋光阻層至半導體裝置上,以避免蝕刻劑侵蝕被覆蓋之區域。於蝕刻製程後,為了沉積及/或形成接續之薄膜,光阻層係進一步藉由電漿處理移除。 The development of semiconductor materials has driven the growth of semiconductor devices. In order to improve the device density and efficiency of semiconductor devices and reduce their costs, the stacking, surface properties, and structural design of each layer of thin film in semiconductor devices are actively researched and developed. In order to form different design structures, the etching process is a commonly used process technology. The etching process includes covering the photoresist layer on the semiconductor device to prevent the etchant from eroding the covered area. After the etching process, in order to deposit and / or form a continuous film, the photoresist layer is further removed by plasma treatment.

根據本揭露之一態樣,提出一種紫外光複合光柵。此紫外光複合光柵包含第一格柵及第二格柵,其中第二格柵對準並平行於第一格柵。第一格柵設有複數個第一穿孔,且第二格柵設有複數個第二穿孔。此些第一穿孔錯開第 二穿孔。第一格柵係由不透光材料所製成。第二格柵係由濾光材料所製成,且此濾光材料可濾除波長小於180nm之紫外光。 According to one aspect of this disclosure, an ultraviolet light composite grating is proposed. The ultraviolet light composite grating includes a first grid and a second grid, wherein the second grid is aligned and parallel to the first grid. The first grille is provided with a plurality of first perforations, and the second grille is provided with a plurality of second perforations. These first perforations are staggered Two perforations. The first grid is made of an opaque material. The second grid is made of a filter material, and the filter material can filter out ultraviolet light with a wavelength less than 180 nm.

根據本揭露之另一態樣,提出一種電漿裝置。此電漿裝置包含真空腔體、加熱裝置、紫外光複合光柵、及射頻線圈。真空腔體之頂端設有氣體入口。加熱裝置係配置以加熱半導體晶圓,且加熱裝置設置於真空腔體之底端。紫外光複合光柵設置於氣體入口及加熱裝置之間,且紫外光複合光柵平行於加熱裝置之加熱面。紫外光複合光柵之垂直投影面積實質大於或等於半導體晶圓之垂直投影面積。此紫外光複合光柵包含上格柵及下格柵。下格柵對準並平行於上格柵。上格柵設有複數個第一穿孔,且下格柵設有複數個第二穿孔,其中第一穿孔錯開第二穿孔。上格柵及下格柵之一者係由不透光材料所製成,且另一者係由濾光材料所製成,其中濾光材料可濾除波長小於180nm之紫外光。射頻線圈設置於氣體入口及紫外光複合光柵之間。 According to another aspect of the present disclosure, a plasma device is proposed. The plasma device includes a vacuum cavity, a heating device, an ultraviolet light grating, and a radio frequency coil. A gas inlet is provided at the top of the vacuum cavity. The heating device is configured to heat the semiconductor wafer, and the heating device is disposed at the bottom end of the vacuum cavity. The ultraviolet composite grating is disposed between the gas inlet and the heating device, and the ultraviolet composite grating is parallel to the heating surface of the heating device. The vertical projection area of the ultraviolet composite grating is substantially larger than or equal to the vertical projection area of the semiconductor wafer. The ultraviolet light composite grating includes an upper grid and a lower grid. The lower grid is aligned and parallel to the upper grid. The upper grille is provided with a plurality of first perforations, and the lower grille is provided with a plurality of second perforations, wherein the first perforations are staggered from the second perforations. One of the upper grid and the lower grid is made of an opaque material, and the other is made of a filter material, wherein the filter material can filter out ultraviolet light with a wavelength less than 180 nm. The RF coil is arranged between the gas inlet and the ultraviolet light grating.

100/200/300/400‧‧‧紫外光複合光柵 100/200/300 / 400‧‧‧UV light composite grating

110/120/210/220/230/310/320/330/410/420/430‧‧‧格柵 110/120/210/220/230/310/320/330/410/420 / 430‧‧‧Grill

111/121/211/221/231/311/321/331/411/421/431‧‧‧穿孔 111/121/211/221/231/311/321/331/411/421 / 431‧‧‧perforated

500‧‧‧電漿裝置 500‧‧‧ Plasma device

510‧‧‧真空腔體 510‧‧‧vacuum cavity

510a/520a‧‧‧頂端 510a / 520a‧‧‧Top

510b/520b‧‧‧底端 510b / 520b‧‧‧ bottom

511‧‧‧氣體入口 511‧‧‧Gas inlet

513‧‧‧氣體輸入管 513‧‧‧Gas inlet tube

513a‧‧‧方向 513a‧‧‧direction

520‧‧‧電漿槽 520‧‧‧ Plasma tank

520c‧‧‧電漿區域 520c‧‧‧ Plasma area

530‧‧‧加熱裝置 530‧‧‧Heating device

530a‧‧‧加熱面 530a‧‧‧heating surface

540‧‧‧半導體晶圓 540‧‧‧semiconductor wafer

550‧‧‧紫外光複合光柵 550‧‧‧UV composite grating

551/552‧‧‧格柵 551 / 552‧‧‧ Grille

551a/552a‧‧‧穿孔 551a / 552a‧‧‧perforation

560‧‧‧射頻線圈 560‧‧‧RF coil

571‧‧‧光子 571‧‧‧photon

571a/571b/571c/573a‧‧‧路徑 571a / 571b / 571c / 573a‧‧‧

573‧‧‧自由基 573‧‧‧ free radical

A-A’‧‧‧剖切線 A-A’‧‧‧cut line

D12/D13/D23‧‧‧距離 D 12 / D 13 / D 23 ‧‧‧Distance

W1/W2/W3‧‧‧孔徑 W 1 / W 2 / W 3 ‧‧‧ Aperture

從以下結合所附圖式所做的詳細描述,可對本揭露之態樣有更佳的了解。需注意的是,根據業界的標準實務,各特徵並未依比例繪示。事實上,為了使討論更為清楚,各特徵的尺寸可任意地增加或減少。 A better understanding of the aspects of the present disclosure can be obtained from the following detailed description in conjunction with the accompanying drawings. It should be noted that, according to industry standard practice, features are not drawn to scale. In fact, to make the discussion clearer, the dimensions of the features can be arbitrarily increased or decreased.

〔圖1A〕係繪示根據本揭露之一些實施例之紫外光複合光柵之立體示意圖。 [FIG. 1A] A three-dimensional schematic diagram of an ultraviolet composite grating according to some embodiments of the present disclosure.

〔圖1B〕係繪示根據本揭露之一些實施例沿著圖1A之剖切線A-A’剖切之紫外光複合光柵的剖面示意圖。 [FIG. 1B] FIG. 1B is a schematic cross-sectional view of an ultraviolet light composite grating cut along a cutting line A-A 'of FIG. 1A according to some embodiments of the present disclosure.

〔圖2A〕係繪示根據本揭露之一些實施例之紫外光複合光柵之立體示意圖。 [Fig. 2A] is a schematic three-dimensional view illustrating an ultraviolet composite grating according to some embodiments of the present disclosure.

〔圖2B〕係繪示根據本揭露之一些實施例沿著圖2A之剖切線A-A’剖切之紫外光複合光柵的剖面示意圖。 [Fig. 2B] It is a schematic cross-sectional view illustrating an ultraviolet light composite grating cut along a cutting line A-A 'of Fig. 2A according to some embodiments of the present disclosure.

〔圖3A〕係繪示根據本揭露之一些實施例之紫外光複合光柵之立體示意圖。 [FIG. 3A] It is a three-dimensional schematic view showing an ultraviolet composite grating according to some embodiments of the present disclosure.

〔圖3B〕係繪示根據本揭露之一些實施例沿著圖3A之剖切線A-A’剖切之紫外光複合光柵的剖面示意圖。 [FIG. 3B] A schematic cross-sectional view of an ultraviolet light composite grating cut along a cutting line A-A 'of FIG. 3A according to some embodiments of the present disclosure.

〔圖4A〕係繪示根據本揭露之一些實施例之紫外光複合光柵之立體示意圖。 [FIG. 4A] It is a three-dimensional schematic view showing an ultraviolet composite grating according to some embodiments of the present disclosure.

〔圖4B〕係繪示根據本揭露之一些實施例沿著圖4A之剖切線A-A’剖切之紫外光複合光柵的剖面示意圖。 [Fig. 4B] It is a schematic cross-sectional view of an ultraviolet light composite grating cut along the cutting line A-A 'of Fig. 4A according to some embodiments of the present disclosure.

〔圖5A〕係繪示根據本揭露之一些實施例之電漿裝置之剖面示意圖。 [FIG. 5A] A schematic cross-sectional view of a plasma device according to some embodiments of the present disclosure.

〔圖5B〕係繪示根據本揭露之一些實施例之圖5A之電漿裝置產生電漿時,紫外光複合光柵的剖面示意圖。 [FIG. 5B] FIG. 5B is a schematic cross-sectional view of the ultraviolet composite grating when the plasma device of FIG. 5A generates a plasma according to some embodiments of the present disclosure.

以下的揭露提供了許多不同的實施例或例子,以實施發明之不同特徵。以下所描述之構件與安排的特定例子係用以簡化本揭露。當然這些僅為例子,並非用以做為限制。舉例而言,在描述中,第一特徵形成於第二特徵上方或 上,可能包含第一特徵與第二特徵以直接接觸的方式形成的實施例,而也可能包含額外特徵可能形成在第一特徵與第二特徵之間的實施例,如此第一特徵與第二特徵可能不會直接接觸。此外,本揭露可能會在各例子中重複參考數字及/或文字。這樣的重複係基於簡單與清楚之目的,以其本身而言並非用以指定所討論之各實施例及/或配置之間的關係。 The following disclosure provides many different embodiments or examples to implement different features of the invention. Specific examples of the components and arrangements described below are used to simplify this disclosure. These are, of course, examples only and are not intended as a limitation. For example, in the description, a first feature is formed above a second feature or Above, it may include embodiments where the first feature and the second feature are formed in direct contact, and may also include embodiments where additional features may be formed between the first feature and the second feature, such that the first feature and the second feature Features may not be in direct contact. In addition, this disclosure may repeat reference numbers and / or text in each example. Such repetitions are for simplicity and clarity and are not in themselves intended to specify the relationship between the embodiments and / or configurations discussed.

另外,在此可能會使用空間相對用語,以方便描述來說明如圖式所繪示之一元件或一特徵與另一(另一些)元件或特徵之關係。除了在圖中所繪示之方向外,這些空間相對用詞意欲含括元件在使用或操作中的不同方位。設備可能以不同方式定位(旋轉90度或在其他方位上),因此可利用同樣的方式來解釋在此所使用之空間相對描述符號。此外,「所製成(made of)」之用語可指為「包含(comprising)」或「所組成(consisting of)」等用語。 In addition, spatial relative terms may be used here to facilitate the description to illustrate the relationship between one element or feature and another (other) element or feature as shown in the figure. In addition to the directions shown in the figures, these relative terms are intended to encompass different orientations of the element in use or operation. The device may be positioned differently (rotated 90 degrees or at other orientations), so the same way can be used to interpret the spatially relative descriptors used here. In addition, the term "made of" may refer to terms such as "comprising" or "consisting of."

於半導體製程中,蝕刻製程常用以在各薄膜中形成所要求之半導體結構以及各層之特定結構,例如:溝渠(trench)、通道(channel)、墊(pad)及/或窗(via)等。其中,光阻層係覆蓋於不須被蝕刻之區域上,以避免被蝕刻介質侵蝕。當進行蝕刻製程後,光阻層須進一步移除,以沉積及/或形成接續之薄膜。一般光阻層可藉由電漿處理移除。於電漿處理中,氣體解離所形成之電漿係同時具有自由基與低波長之紫外光光子(亦即高能量之紫外光光子),其中自由基可用以移除光阻層,惟若此些低波長之紫外光光子直接照射待處理之半導體晶圓時,此些高能量之紫外光光子會破壞半導 體晶圓,而使半導體晶圓形成更嚴重之矽缺陷。據此,電漿中之此些紫外光光子須藉由光柵濾除。然而,隨著半導體製程越趨複雜,其中之蝕刻處理、電漿處理及/或沉積製程等製程步驟亦使得半導體晶圓更容易產生空位(vacancy)及/或雙空位(divacancy)等矽缺陷。當矽缺陷之數量過多或範圍過大時,半導體晶圓容易破損毀壞。 In the semiconductor process, the etching process is often used to form the required semiconductor structure and the specific structure of each layer in each thin film, such as: trenches, channels, pads, and / or vias. Wherein, the photoresist layer is covered on the area that does not need to be etched to avoid being eroded by the etching medium. After the etching process is performed, the photoresist layer must be further removed to deposit and / or form a continuous film. Generally, the photoresist layer can be removed by plasma treatment. In the plasma treatment, the plasma formed by gas dissociation has both free radicals and low-wavelength ultraviolet photons (that is, high-energy ultraviolet photons). The free radicals can be used to remove the photoresist layer. When these low-wavelength UV photons directly irradiate the semiconductor wafer to be processed, these high-energy UV photons will destroy the semiconductor Bulk wafers, and more severe silicon defects in semiconductor wafers. Accordingly, these ultraviolet photons in the plasma must be filtered by a grating. However, as semiconductor processes become more complex, process steps such as etching, plasma processing, and / or deposition processes also make semiconductor wafers more prone to silicon defects such as vacancy and / or double vacancy. When the number of silicon defects is too large or the range is too large, the semiconductor wafer is easily damaged.

本揭露揭示一種紫外光複合光柵及其應用。藉由本揭露之紫外光複合光柵,真空紫外光(Vacuum Ultra-Violet;VUV)可被濾除,以避免高能量之紫外光光子直接照射半導體晶圓,來避免產生更多之矽缺陷。此外,當濾除後之其他紫外光光子照射至半導體晶圓時,半導體晶圓中之矽缺陷亦可被有效地回復,而提升半導體晶圓之品質。 This disclosure discloses an ultraviolet composite grating and its application. With the disclosed ultraviolet composite grating, vacuum ultra-violet (VUV) can be filtered to prevent high-energy ultraviolet photons from directly irradiating the semiconductor wafer, thereby avoiding more silicon defects. In addition, when other filtered ultraviolet photons are irradiated to the semiconductor wafer, silicon defects in the semiconductor wafer can also be effectively recovered, thereby improving the quality of the semiconductor wafer.

請同時參照圖1A及圖1B,其中圖1A係繪示根據本揭露之一些實施例之紫外光複合光柵之立體示意圖,且圖1B係繪示根據本揭露之一些實施例沿著圖1A之剖切線A-A’剖切之紫外光複合光柵的剖面示意圖。紫外光複合光柵100包含第一格柵110及第二格柵120,且第二格柵120係對準並平行於第一格柵110。第一格柵110設有複數個第一穿孔111,且第二格柵120設有複數個第二穿孔121。第一穿孔111係錯開第二穿孔121,以使光線無法由紫外光複合光柵100之一側直接穿過第一穿孔111與第二穿孔121,而無法照射至紫外光複合光柵100之另一側。須理解的是, 此處所言之「直接穿過穿孔」係指光線不經反射或折射等傳遞機制,而可以直線傳遞之路徑直接穿過穿孔。 Please refer to FIG. 1A and FIG. 1B at the same time, wherein FIG. 1A is a three-dimensional schematic view of an ultraviolet composite grating according to some embodiments of the present disclosure, and FIG. 1B is a cross-section of FIG. 1A according to some embodiments of the present disclosure. A schematic cross-sectional view of a UV composite grating cut by tangent line AA '. The ultraviolet composite grating 100 includes a first grid 110 and a second grid 120, and the second grid 120 is aligned and parallel to the first grid 110. The first grille 110 is provided with a plurality of first perforations 111, and the second grille 120 is provided with a plurality of second perforations 121. The first perforation 111 is staggered with the second perforation 121 so that light cannot directly pass through the first perforation 111 and the second perforation 121 from one side of the ultraviolet composite grating 100 and cannot be irradiated to the other side of the ultraviolet composite grating 100 . It is important to understand that The "directly through the perforation" mentioned here means that the light can pass straight through the perforation without a transmission mechanism such as reflection or refraction.

第一格柵110係由不透光材料所製成。在一些實施例中,不透光材料可包含但不限於鋁、其他適當之不透光材料或上述材料之任意混合。第二格柵120係由濾光材料所製成,且此濾光材料可濾除波長小於180nm之紫外光。在一些實施例中,此濾光材料可濾除真空紫外光。在一些實施例中,此濾光材料可包含但不限於石英材料、藍寶石材料(sapphire)、其他適當之濾光材料或上述材料之任意混合。在一些具體例中,石英材料可包含但不限於商品名為GE Type 214之熔融石英(fused quartz)、商品名為GE Type 219之熔融石英、其他可濾除波長小於180nm之紫外光的石英材料或上述材料之任意組合。據此,由於第一格柵110係由不透光材料所製成,第二格柵120係由濾光材料所製成,且第一穿孔111與第二穿孔121係交錯設置,故紫外光複合光柵100可遮蔽波長小於180nm之紫外光。 The first grid 110 is made of an opaque material. In some embodiments, the opaque material may include, but is not limited to, aluminum, other suitable opaque materials, or any combination of the foregoing. The second grid 120 is made of a filter material, and the filter material can filter out ultraviolet light with a wavelength less than 180 nm. In some embodiments, the filter material can filter out vacuum ultraviolet light. In some embodiments, the filter material may include, but is not limited to, a quartz material, a sapphire material, other suitable filter materials, or any combination thereof. In some specific examples, the quartz material may include, but is not limited to, fused quartz with a trade name of GE Type 214, fused quartz with a trade name of GE Type 219, and other quartz materials that can filter out ultraviolet light with a wavelength less than 180 nm Or any combination of the above materials. According to this, since the first grille 110 is made of an opaque material, the second grille 120 is made of a filter material, and the first and second perforations 111 and 121 are staggered, the ultraviolet light The composite grating 100 can shield ultraviolet light with a wavelength less than 180 nm.

在一些實施例中,第一格柵110與第二格柵120間之距離D12實質係大於0公釐且小於或等於4公釐。若第一格柵110與第二格柵120間之距離D12大於4公釐時,第一格柵110與第二格柵120間之距離D12過大,而易使波長小於180nm之紫外光經由第一穿孔111與第二穿孔121穿過紫外光複合光柵100,進而使紫外光複合光柵100失去濾除波長小於180nm之光線的功效。若第一格柵110與第二格柵120間之距離D12等於0公釐,且紫外光複合光柵100應用於 電漿裝置時,雖然紫外光複合光柵100仍可濾除波長小於180nm之紫外光,惟電漿中之自由基無法藉由漫射擴散作用(diffuse),經第一穿孔111與第二穿孔121漫射通過紫外光複合光柵100,而無法藉由此些自由基移除光阻層。在一些實施例中,第一格柵110與第二格柵120間之距離D12實質係大於1公釐且小於或等於3公釐。在一些實施例中,第一格柵110與第二格柵120間之距離D12實質係2公釐。 In some embodiments, the distance D 12 between the first grid 110 and the second grid 120 is substantially greater than 0 mm and less than or equal to 4 mm. If the first grid 110 and second grid 120 a distance D of 4 mm is greater than 12, a first grid 110 and the distance D 12 of the second grid 120 is too large, the apparent wavelength of less than 180nm UV Through the first perforation 111 and the second perforation 121, the ultraviolet composite grating 100 is passed, so that the ultraviolet composite grating 100 loses the effect of filtering out light having a wavelength less than 180 nm. If the distance D 12 between the first grid 110 and the second grid 120 is equal to 0 mm, and the ultraviolet composite grating 100 is applied to a plasma device, although the ultraviolet composite grating 100 can still filter out ultraviolet light with a wavelength less than 180 nm Light, but the free radicals in the plasma cannot diffuse through the ultraviolet composite grating 100 through the first perforation 111 and the second perforation 121, and the light cannot be removed by these free radicals. Barrier layer. In some embodiments, the distance D 12 between the first grid 110 and the second grid 120 is substantially greater than 1 mm and less than or equal to 3 mm. In some embodiments, the distance D 12 between the first grid 110 and the second grid 120 is substantially 2 mm.

舉例而言,第一穿孔111與第二穿孔121之孔徑W1與W2分別實質為3公釐至4公釐。若第一穿孔111之孔徑W1及/或第二穿孔121之孔徑W2小於3公釐時,過窄小之穿孔孔徑W1與W2會使前述自由基不易藉由漫射作用通過第一穿孔111及第二穿孔121,而降低自由基對光阻層之移除效率。須注意的是,雖然可藉由增加穿孔密集度來提升自由基漫射通過穿孔之數量,以提升並維持其效益,惟過於密集之穿孔將降低格柵之機械強度,而使格柵於抽真空過程中崩壞碎裂。再者,過於密集之穿孔亦大幅增加第一穿孔111與第二穿孔121之重疊機率,而使紫外光易直接經由垂直位置相互重疊之第一穿孔111與第二穿孔121通過紫外光複合光柵100。若第一穿孔111之孔徑W1及/或第二穿孔121之孔徑W2大於4公釐時,過大之孔徑W1與W2易使紫外光直接穿過第一穿孔111與第二穿孔121,而使紫外光複合光柵100無法遮蔽波長小於180nm之紫外光。相同地,雖然可藉由降低穿孔密集度進一步降低第一穿孔111與第二穿孔121之重疊機率,惟過於稀疏之穿孔將降低自由基藉由漫射作用通過 紫外光複合光柵100之數量,而降低其效益。在一些實施例中,第一穿孔111與第二穿孔121之孔徑W1與W2分別實質為3.4公釐至3.5公釐。 For example, the apertures W 1 and W 2 of the first and second perforations 111 and 121 are substantially 3 mm to 4 mm, respectively. If the pore diameter W 1 of the first perforation 111 and / or the pore diameter W 2 of the second perforation 121 is less than 3 mm, the excessively small perforations W 1 and W 2 will make it difficult for the aforementioned radicals to pass through the first through diffusion. A through hole 111 and a second through hole 121 reduce the removal efficiency of the photoresist layer by free radicals. It should be noted that, although the perforation density can be increased to increase the number of free radical diffusion through perforations to enhance and maintain its benefits, excessively dense perforations will reduce the mechanical strength of the grille and make the grille more difficult to extract. Cracked and chipped during vacuum. Furthermore, the excessively dense perforations also greatly increase the overlapping probability of the first perforations 111 and the second perforations 121, so that the ultraviolet light easily passes through the first perforations 111 and the second perforations 121 that overlap each other directly through the ultraviolet composite grating 100. . If the aperture W 1 of the first perforation 111 and / or the aperture W 2 of the second perforation 121 is greater than 4 mm, excessively large apertures W 1 and W 2 may easily allow ultraviolet light to pass directly through the first perforation 111 and the second perforation 121. Therefore, the ultraviolet light composite grating 100 cannot shield ultraviolet light with a wavelength less than 180 nm. Similarly, although the overlap probability of the first perforation 111 and the second perforation 121 can be further reduced by reducing the perforation density, the excessively sparse perforation will reduce the number of free radicals passing through the ultraviolet composite grating 100 through diffusion, and Reduce its effectiveness. In some embodiments, the apertures W 1 and W 2 of the first through-hole 111 and the second through-hole 121 are substantially 3.4 mm to 3.5 mm, respectively.

在一些實施例中,紫外光複合光柵100可包含至少一第三格柵。此至少一第三格柵係對準並平行於第一格柵110及第二格柵120。此第三格柵設有複數個第三穿孔,且此些第三穿孔錯開第一格柵110之第一穿孔111或第二格柵之第二穿孔121。換言之,第三穿孔可對準第一穿孔111,但錯開第二穿孔121,或者第三穿孔可對準第二穿孔121,但錯開第一穿孔111。在此實施例中,第三格柵可設置於第一格柵110與第二格柵120之間,或者第三格柵可設置於紫外光複合光柵100之一側(亦即相鄰於第一格柵110之一側,或者相鄰於第二格柵120之一側)。 In some embodiments, the ultraviolet composite grating 100 may include at least a third grid. The at least one third grid is aligned and parallel to the first grid 110 and the second grid 120. The third grid is provided with a plurality of third perforations, and the third perforations are staggered from the first perforations 111 of the first grid 110 or the second perforations 121 of the second grid. In other words, the third perforation may be aligned with the first perforation 111 but staggered from the second perforation 121, or the third perforation may be aligned with the second perforation 121 but staggered from the first perforation 111. In this embodiment, the third grid may be disposed between the first grid 110 and the second grid 120, or the third grid may be disposed on one side of the ultraviolet composite grating 100 (that is, adjacent to the first grid 110). (One side of one grid 110, or one side adjacent to the second grid 120).

請同時參照圖2A與圖2B,其中圖2A係繪示根據本揭露之一些實施例之紫外光複合光柵之立體示意圖,且圖2B係繪示根據本揭露之一些實施例沿著圖2A之剖切線A-A’剖切之紫外光複合光柵的剖面示意圖。紫外光複合光柵200包含第一格柵210、第二格柵220與第三格柵230。第二格柵220係對準並平行於第一格柵210,且第三格柵230係對準並平行於第一格柵210與第二格柵220。其中,第二格柵220係設置於第一格柵210與第三格柵230之間。第一格柵210設有複數個第一穿孔211,第二格柵220設有複數個第二穿孔221,且第三格柵230設有複數個第三穿孔231。第一穿孔211係錯開第二穿孔221,且第二穿孔221 係錯開第三穿孔231,其中第一穿孔211可對準第三穿孔231。據此,由紫外光複合光柵200之一側,光線無法直接經由第一穿孔211、第二穿孔221與第三穿孔231照射至紫外光複合光柵200之另一側。在一些實施例中,第一穿孔211可錯開第三穿孔231,故第一穿孔211、第二穿孔221與第三穿孔231係彼此交錯設置。 Please refer to FIG. 2A and FIG. 2B at the same time, wherein FIG. 2A is a three-dimensional schematic view of an ultraviolet composite grating according to some embodiments of the present disclosure, and FIG. 2B is a cross-section of FIG. 2A according to some embodiments of the present disclosure. A schematic cross-sectional view of a UV composite grating cut by tangent line AA '. The ultraviolet composite grating 200 includes a first grid 210, a second grid 220, and a third grid 230. The second grid 220 is aligned and parallel to the first grid 210, and the third grid 230 is aligned and parallel to the first grid 210 and the second grid 220. The second grille 220 is disposed between the first grille 210 and the third grille 230. The first grille 210 is provided with a plurality of first perforations 211, the second grille 220 is provided with a plurality of second perforations 221, and the third grille 230 is provided with a plurality of third perforations 231. The first perforation 211 is staggered with the second perforation 221, and the second perforation 221 The third perforation 231 is staggered. The first perforation 211 can be aligned with the third perforation 231. According to this, from one side of the ultraviolet composite grating 200, light cannot be directly irradiated to the other side of the ultraviolet composite grating 200 through the first through hole 211, the second through hole 221, and the third through hole 231. In some embodiments, the first perforation 211 can be staggered from the third perforation 231, so the first perforation 211, the second perforation 221, and the third perforation 231 are staggered with each other.

第一格柵210、第二格柵220與第三格柵230之一者係由不透光材料所製成,且其餘者係由濾光材料所製成,其中此濾光材料可濾除波長小於180nm之紫外光。在一些實施例中,不透光材料可包含但不限於鋁、其他適當之不透光材料或上述材料之任意混合。在一些實施例中,此濾光材料可包含但不限於石英材料、藍寶石材料、其他適當之濾光材料或上述材料之任意混合。在一些具體例中,石英材料可包含但不限於商品名為GE Type 214之熔融石英、商品名為GE Type 219之熔融石英、其他可濾除波長小於180nm之紫外光的石英材料或上述材料之任意組合。因此,由於第一格柵210、第二格柵220與第三格柵230之一者係由不透光材料所製成,且其餘者係由濾光材料所製成,加以光線無法直接經由第一穿孔211、第二穿孔221與第三穿孔231通過紫外光複合光柵200,故紫外光複合光柵200可遮蔽波長小於180nm之紫外光。在一些實施例中,第一格柵210、第二格柵220與第三格柵230之一者可由濾光材料所製成(此格柵簡稱為濾光格柵),且其餘者可由不透光材料所製成(此些格柵簡稱為不透光格柵),其中此些不透光格柵之 穿孔係彼此對準的,或者此些不透光格柵之穿孔的排列可容許光線,經由穿孔直接穿過此些不透光格柵。在此實施例中,從紫外光複合光柵200之一側,光線可直接經由不透光格柵之穿孔,並通過濾光格柵(但不通過濾光格柵之穿孔),照射至紫外光複合光柵200之另一側。舉例而言,如圖2B所示,當第一格柵210與第三格柵230係由不透光材料所製成,且第二格柵220係由濾光材料所製成,光線可由第一穿孔211通過第一格柵210,並通過第二格柵220之本體(亦即不經由第二穿孔221通過第二格柵220),以濾除波長小於180nm之紫外光。然後,經由第三穿孔231通過第三格柵230,以使波長大於或等於180nm之光線可照射至紫外光複合光柵200之另一側。 One of the first grid 210, the second grid 220, and the third grid 230 is made of an opaque material, and the other is made of a filter material, wherein the filter material can be filtered out. Ultraviolet light with a wavelength less than 180nm. In some embodiments, the opaque material may include, but is not limited to, aluminum, other suitable opaque materials, or any combination of the foregoing. In some embodiments, the filter material may include, but is not limited to, a quartz material, a sapphire material, other suitable filter materials, or any combination of the foregoing materials. In some specific examples, the quartz material may include, but is not limited to, fused silica with a trade name of GE Type 214, fused silica with a trade name of GE Type 219, other quartz materials that can filter out ultraviolet light with a wavelength less than 180 nm, or the above materials random combination. Therefore, since one of the first grid 210, the second grid 220, and the third grid 230 is made of an opaque material, and the other is made of a filter material, light cannot pass directly therethrough. The first perforation 211, the second perforation 221, and the third perforation 231 pass through the ultraviolet composite grating 200, so the ultraviolet composite grating 200 can shield ultraviolet light with a wavelength less than 180 nm. In some embodiments, one of the first grid 210, the second grid 220, and the third grid 230 may be made of a filter material (this grid is referred to as a filter grid for short), and the other may be Made of light-transmitting materials (these grills are referred to as opaque grills for short), among which The perforations are aligned with each other, or the perforations of the opaque grids allow light to pass through the opaque grids directly through the perforations. In this embodiment, from one side of the ultraviolet composite grating 200, light can directly pass through the perforation of the opaque grid and pass through the filter grid (but not through the perforation of the filter grid) to the ultraviolet light composite. The other side of the grating 200. For example, as shown in FIG. 2B, when the first grille 210 and the third grille 230 are made of opaque materials, and the second grille 220 is made of a filter material, light can be emitted from the first grille. A perforation 211 passes through the first grille 210 and passes through the body of the second grille 220 (that is, the second grille 220 does not pass through the second perforation 221) to filter out ultraviolet light having a wavelength less than 180 nm. Then, it passes through the third grid 230 through the third perforation 231 so that light with a wavelength greater than or equal to 180 nm can be irradiated to the other side of the ultraviolet composite grating 200.

請繼續參照圖2B,第一格柵210與第二格柵220間之距離D12實質係大於0公釐且小於或等於4公釐,且第二格柵220與第三格柵230之距離D23實質係大於0公釐且小於或等於4公釐。若距離D12與距離D23大於4公釐時,第一格柵210與第二格柵220間之距離D12及/或第二格柵220與第三格柵230間之距離D23過大,而易使波長小於180nm之紫外光經由第一穿孔211、第二穿孔221與第三穿孔231穿過紫外光複合光柵200,進而使紫外光複合光柵200失去濾除波長小於180nm之光線的功效。若第一格柵210與第二格柵220間之距離D12等於0公釐,或第二格柵220與第三格柵230間之距離D23等於0公釐時,且紫外光複合光柵200應用於電漿裝置時,雖然紫外光複合光柵200仍可濾除 波長小於180nm之紫外光,惟電漿中之自由基無法藉由漫射作用,經第一穿孔211、第二穿孔221與第三穿孔231漫射通過紫外光複合光柵200,而無法藉由此些自由基移除光阻層。在一些實施例中,第一格柵210與第二格柵220間之距離D12實質係大於1公釐且小於或等於3公釐。在一些實施例中,第一格柵210與第二格柵220間之距離D12實質係2公釐。在一些實施例中,第二格柵220與第三格柵230間之距離D23實質係大於1公釐且小於或等於3公釐。在一些實施例中,第二格柵220與第三格柵230間之距離D23實質係2公釐。 Please continue to refer to FIG. 2B, the distance D 12 between the first grid 210 and the second grid 220 is substantially greater than 0 mm and less than or equal to 4 mm, and the distance between the second grid 220 and the third grid 230 D 23 is substantially greater than 0 mm and less than or equal to 4 mm. If the distance D 12 and the distance D 23 are greater than 4 mm, the distance D 12 between the first grid 210 and the second grid 220 and / or the distance D 23 between the second grid 220 and the third grid 230 is too large. The ultraviolet light with a wavelength less than 180 nm easily passes through the ultraviolet composite grating 200 through the first perforation 211, the second perforation 221, and the third perforation 231, thereby causing the ultraviolet composite grating 200 to lose the effect of filtering light with a wavelength less than 180 nm. . If the distance D 12 between the first grid 210 and the second grid 220 is equal to 0 mm, or the distance D 23 between the second grid 220 and the third grid 230 is equal to 0 mm, and the ultraviolet composite grating When 200 is used in a plasma device, although the ultraviolet composite grating 200 can still filter out ultraviolet light with a wavelength less than 180 nm, the free radicals in the plasma cannot be diffused through the first perforation 211, the second perforation 221, and The third perforation 231 diffuses through the ultraviolet composite grating 200, and the photoresist layer cannot be removed by these radicals. In some embodiments, the distance D 12 between the first grid 210 and the second grid 220 is substantially greater than 1 mm and less than or equal to 3 mm. In some embodiments, the distance D 12 between the first grid 210 and the second grid 220 is substantially 2 mm. In some embodiments, the distance D 23 between the second grid 220 and the third grid 230 is substantially greater than 1 mm and less than or equal to 3 mm. In some embodiments, the distance D 23 between the second grid 220 and the third grid 230 is substantially 2 mm.

第一穿孔211、第二穿孔221與第三穿孔231之孔徑W1、W2與W3分別實質為3公釐至4公釐。若孔徑W1、W2及/或W3小於3公釐時,過窄小之穿孔孔徑W1、W2及/或W3會使前述自由基不易藉由漫射作用通過第一穿孔111、第二穿孔121與第三穿孔131,而降低自由基對光阻層之移除效率。相同地,雖然可藉由增加穿孔密集度來提升自由基漫射通過穿孔之數量,以提升並維持其效益,惟過於密集之穿孔將降低格柵之機械強度,而使格柵於抽真空過程中崩壞碎裂。再者,過於密集之穿孔亦大幅增加第一穿孔211、第二穿孔221與第三穿孔231之重疊機率,而使紫外光易直接經由垂直位置相互重疊之第一穿孔211、第二穿孔221與第三穿孔231通過紫外光複合光柵200。若前述之孔徑W1、W2及/或W3大於4公釐時,過大之孔徑W1、W2與W3易使紫外光直接穿過第一穿孔211、第二穿孔221與第三 穿孔231,而使紫外光複合光柵200無法遮蔽波長小於180nm之紫外光。相同地,雖然可藉由降低穿孔密集度進一步降低第一穿孔211、第二穿孔221與第三穿孔231之重疊機率,惟過於稀疏之穿孔將降低自由基藉由漫射作用通過紫外光複合光柵200之數量,而降低其效益。在一些實施例中,孔徑W1、孔徑W2與孔徑W3分別實質為3.4公釐至3.5公釐。 The apertures W 1 , W 2 and W 3 of the first through hole 211, the second through hole 221 and the third through hole 231 are substantially 3 mm to 4 mm, respectively. If the pore diameters W 1 , W 2 and / or W 3 are less than 3 mm, the excessively small perforations W 1 , W 2 and / or W 3 may make it difficult for the aforementioned radicals to pass through the first perforation 111 by diffusion. , The second perforation 121 and the third perforation 131, thereby reducing the removal efficiency of the photoresist layer by free radicals. Similarly, although the density of perforations can be increased by increasing the perforation density to increase and maintain the benefits, the excessively dense perforations will reduce the mechanical strength of the grille and cause the grille to be evacuated. Crash and fragmentation. Furthermore, the excessively dense perforations also greatly increase the overlapping probability of the first perforations 211, the second perforations 221, and the third perforations 231, so that the ultraviolet light easily passes through the first perforations 211, the second perforations 221, and The third perforation 231 passes through the ultraviolet composite grating 200. If the aforementioned apertures W 1 , W 2 and / or W 3 are larger than 4 mm, excessively large apertures W 1 , W 2 and W 3 may easily allow ultraviolet light to pass directly through the first perforation 211, the second perforation 221 and the third The perforation 231 prevents the ultraviolet composite grating 200 from shielding ultraviolet light with a wavelength less than 180 nm. Similarly, although the overlapping probability of the first perforation 211, the second perforation 221, and the third perforation 231 can be further reduced by reducing the perforation density, the excessively sparse perforation will reduce the free radicals through the ultraviolet composite grating through diffusion. 200 quantity while reducing its benefits. In some embodiments, the pore diameter W 1 , the pore diameter W 2 and the pore diameter W 3 are substantially 3.4 mm to 3.5 mm, respectively.

請同時參照圖3A與圖3B,其中圖3A係繪示根據本揭露之一些實施例之紫外光複合光柵之立體示意圖,且圖3B係繪示根據本揭露之一些實施例沿著圖3A之剖切線A-A’剖切之紫外光複合光柵的剖面示意圖。紫外光複合光柵300包含第一格柵310、第二格柵320與第三格柵330。第二格柵320對準並平行於第一格柵310,且第三格柵330對準並平行於第一格柵310與第二格柵320。其中,第一格柵310係設置於第三格柵330與第二格柵320之間。第一格柵310設有複數個第一穿孔311、第二格柵320設有複數個第穿孔321,且第三格柵330設有複數個第三穿孔331。第三穿孔331係對準第一穿孔311,且第一穿孔311與第三穿孔331係錯開第二穿孔321。據此,由紫外光複合光柵300之一側,光線無法直接經由第三穿孔331、第一穿孔311與第二穿孔321照射至紫外光複合光柵300之另一側。 Please refer to FIG. 3A and FIG. 3B at the same time, wherein FIG. 3A is a three-dimensional schematic view of an ultraviolet composite grating according to some embodiments of the present disclosure, and FIG. 3B is a cross-section of FIG. 3A according to some embodiments of the present disclosure. A schematic cross-sectional view of a UV composite grating cut by tangent line AA '. The ultraviolet composite grating 300 includes a first grid 310, a second grid 320, and a third grid 330. The second grid 320 is aligned and parallel to the first grid 310, and the third grid 330 is aligned and parallel to the first grid 310 and the second grid 320. The first grid 310 is disposed between the third grid 330 and the second grid 320. The first grille 310 is provided with a plurality of first perforations 311, the second grille 320 is provided with a plurality of first perforations 321, and the third grille 330 is provided with a plurality of third perforations 331. The third perforation 331 is aligned with the first perforation 311, and the first perforation 311 and the third perforation 331 are staggered from the second perforation 321. According to this, from one side of the ultraviolet composite grating 300, light cannot be directly irradiated to the other side of the ultraviolet composite grating 300 through the third through hole 331, the first through hole 311, and the second through hole 321.

第一格柵310、第二格柵320與第三格柵330之至少一者係由濾光材料所製成,且其餘者係由不透光材料所製成。其中,當第二格柵320係由不透光材料所製成時,第一格柵310與第三格柵330均係由濾光材料所製成。當第二 格柵320係由濾光材料所製成時,第一格柵310與第三格柵330之至少一者係由不透光材料所製成。在一些實施例中,不透光材料可包含但不限於鋁、其他適當之不透光材料或上述材料之任意混合。前述之濾光材料可濾除波長小於180nm之紫外光。在一些實施例中,濾光材料可包含但不限於石英材料、藍寶石材料、其他適當之濾光材料或上述材料之任意混合。在一些具體例中,石英材料可包含但不限於商品名為GE Type 214之熔融石英、商品名為GE Type 219之熔融石英、其他可濾除波長小於180nm之紫外光的石英材料或上述材料之任意組合。據此,由於第一格柵310、第二格柵320與第三格柵330之至少一者係由濾光材料所製成,且其餘者係由不透光材料所製成,故紫外光複合光柵200可遮蔽波長小於180nm之紫外光。應理解的是,於紫外光複合光柵300中,由不透光材料所製成之格柵(亦即不透光格柵)的穿孔彼此須對準,或者容許光線可經由此些不透光格柵之穿孔,直接穿過此些不透光格柵。 At least one of the first grid 310, the second grid 320, and the third grid 330 is made of a filter material, and the other is made of an opaque material. When the second grid 320 is made of an opaque material, the first grid 310 and the third grid 330 are made of a filter material. When the second When the grid 320 is made of a filter material, at least one of the first grid 310 and the third grid 330 is made of an opaque material. In some embodiments, the opaque material may include, but is not limited to, aluminum, other suitable opaque materials, or any combination of the foregoing. The aforementioned filter material can filter out ultraviolet light with a wavelength less than 180 nm. In some embodiments, the filter material may include, but is not limited to, a quartz material, a sapphire material, other suitable filter materials, or any combination of the foregoing materials. In some specific examples, the quartz material may include, but is not limited to, fused silica with a trade name of GE Type 214, fused silica with a trade name of GE Type 219, other quartz materials that can filter out ultraviolet light with a wavelength less than 180 nm, or the above materials random combination. Accordingly, since at least one of the first grid 310, the second grid 320, and the third grid 330 is made of a filter material, and the other is made of an opaque material, ultraviolet light The composite grating 200 can shield ultraviolet light having a wavelength of less than 180 nm. It should be understood that, in the ultraviolet composite grating 300, the perforations of the grids (ie, opaque grids) made of opaque materials must be aligned with each other, or allow light to pass through these opaque The perforations of the grid pass directly through these opaque grids.

請繼續參照圖3B,第三格柵330與第一格柵310間之距離D13實質係大於0公釐且小於或等於4公釐,且第一格柵310與第二格柵320間之距離D12實質係大於0公釐且小於或等於4公釐。若距離D13與距離D12大於4公釐時,第三格柵330與第一格柵310間之距離D13及/或第一格柵310與第二格柵320間之距離D12過大,而易使波長小於180nm之紫外光直接經由第三穿孔331、第一穿孔311與第二穿孔321穿過紫外光複合光柵300,進而使紫外光複合光 柵300失去濾除波長小於180nm之光線的功效。若第三格柵330與第一格柵310間之距離D13等於0公釐,或第一格柵310與第二格柵320間之距離D12等於0公釐時,且紫外光複合光柵300應用於電漿裝置時,雖然紫外光複合光柵300仍可濾除波長小於180nm之紫外光,惟電漿中之自由基無法藉由漫射作用,經第三穿孔331、第一穿孔311與第二穿孔321漫射通過紫外光複合光柵300,而無法藉由此些自由基移除光阻層。在一些實施例中,第三格柵330與第一格柵310間之距離D13實質係大於1公釐且小於或等於3公釐。在一些實施例中,第三格柵330與第一格柵310間之距離D13實質係2公釐。在一些實施例中,第一格柵310與第二格柵320間之距離D12實質係大於1公釐且小於或等於3公釐。在一些實施例中,第一格柵310與第二格柵320間之距離D12實質係2公釐。 3B, the distance D 13 between the third grid 330 and the first grid 310 is substantially greater than 0 mm and less than or equal to 4 mm, and the distance between the first grid 310 and the second grid 320 The distance D 12 is substantially greater than 0 mm and less than or equal to 4 mm. If the distance D 13 and the distance D 12 are greater than 4 mm, the distance D 13 between the third grid 330 and the first grid 310 and / or the distance D 12 between the first grid 310 and the second grid 320 is too large. And it is easy for the ultraviolet light with a wavelength less than 180 nm to pass through the ultraviolet composite grating 300 directly through the third perforation 331, the first perforation 311, and the second perforation 321, so that the ultraviolet composite grating 300 loses the ability to filter out light with a wavelength less than 180 nm. efficacy. If the distance D 13 between the third grid 330 and the first grid 310 is equal to 0 mm, or the distance D 12 between the first grid 310 and the second grid 320 is equal to 0 mm, and the ultraviolet composite grating When the 300 is used in a plasma device, although the ultraviolet composite grating 300 can still filter out ultraviolet light with a wavelength less than 180 nm, the free radicals in the plasma cannot be diffused through the third perforation 331, the first perforation 311, and The second perforation 321 diffuses through the ultraviolet composite grating 300, and the photoresist layer cannot be removed by these radicals. In some embodiments, the distance D 13 between the third grid 330 and the first grid 310 is substantially greater than 1 mm and less than or equal to 3 mm. In some embodiments, the distance D 13 between the third grid 330 and the first grid 310 is substantially 2 mm. In some embodiments, the distance D 12 between the first grid 310 and the second grid 320 is substantially greater than 1 mm and less than or equal to 3 mm. In some embodiments, the distance D 12 between the first grid 310 and the second grid 320 is substantially 2 mm.

第三穿孔331、第一穿孔311與第二穿孔321之孔徑W3、W1與W2分別實質為3公釐至4公釐。若孔徑W3、W1及/或W2小於3公釐時,過窄小之穿孔孔徑W3、W1及/或W2會使前述自由基不易藉由漫射作用通過第三穿孔331、第一穿孔311與第二穿孔321,而降低對光阻層之移除效率。相同地,雖然可藉由增加穿孔密集度來提升自由基漫射通過穿孔之數量,以提升並維持其效益,惟過於密集之穿孔將降低格柵之機械強度,而使格柵於抽真空過程中崩壞碎裂。再者,過於密集之穿孔亦大幅增加第三穿孔331、第一穿孔311與第二穿孔321之重疊機率,而使紫外光易直接 經由垂直位置相互重疊之第三穿孔331、第一穿孔311與第二穿孔321通過紫外光複合光柵300。若前述之孔徑W3、W1及/或W2大於4公釐時,過大之孔徑W3、W1與W2易使紫外光直接穿過第三穿孔331、第一穿孔311與第二穿孔321,而使紫外光複合光柵300無法遮蔽波長小於180nm之紫外光。相同地,雖然可藉由降低穿孔密集度進一步降低第三穿孔331、第一穿孔311與第二穿孔321之重疊機率,惟過於稀疏之穿孔將降低自由基藉由漫射作用通過紫外光複合光柵300之數量,而降低其效益。在一些實施例中,孔徑W3、孔徑W1與孔徑W2分別實質為3.4公釐至3.5公釐。 The apertures W 3 , W 1, and W 2 of the third perforations 331, the first perforations 311, and the second perforations 321 are substantially 3 mm to 4 mm, respectively. If the pore diameters W 3 , W 1 and / or W 2 are less than 3 mm, an excessively narrow perforation pore diameter W 3 , W 1 and / or W 2 may make it difficult for the aforementioned free radicals to pass through the third perforation 331 by diffusion. The first through hole 311 and the second through hole 321 reduce the removal efficiency of the photoresist layer. Similarly, although the density of perforations can be increased by increasing the perforation density to increase and maintain the benefits, the excessively dense perforations will reduce the mechanical strength of the grille and cause the grille to be evacuated. Crash and fragmentation. Furthermore, the excessively dense perforations also greatly increase the overlapping probability of the third perforations 331, the first perforations 311, and the second perforations 321, so that the ultraviolet light easily passes through the third perforations 331, the first perforations 311, and The second perforation 321 passes through the ultraviolet composite grating 300. If the aforementioned apertures W 3 , W 1 and / or W 2 are larger than 4 mm, excessively large apertures W 3 , W 1 and W 2 may easily allow ultraviolet light to pass directly through the third perforation 331, the first perforation 311 and the second The perforation 321 prevents the ultraviolet composite grating 300 from shielding ultraviolet light with a wavelength less than 180 nm. Similarly, although the overlap probability of the third perforation 331, the first perforation 311, and the second perforation 321 can be further reduced by reducing the perforation density, the overly sparse perforation will reduce the free radicals through the ultraviolet composite grating through diffusion. 300 quantity while reducing its benefits. In some embodiments, the pore diameter W 3 , the pore diameter W 1, and the pore diameter W 2 are substantially 3.4 mm to 3.5 mm, respectively.

請同時參照圖4A與圖4B,其中圖4A係繪示根據本揭露之一些實施例之紫外光複合光柵之立體示意圖,且圖4B係繪示根據本揭露之一些實施例沿著圖4A之剖切線A-A’剖切之紫外光複合光柵的剖面示意圖。紫外光複合光柵400包含第三格柵430、第一格柵410與第二格柵420。第二格柵420係對準並平行於第一格柵410,且第三格柵430係對準第一格柵410與第二格柵420,其中第一格柵410係設置於第二格柵420與第三格柵430之間。第三格柵430設有複數個第三穿孔431,第一格柵410設有複數個第一穿孔411,且第二格柵420設有複數個第二穿孔421。第三穿孔431係錯開第一穿孔411,第一穿孔411錯開第二穿孔421,惟於垂直於紫外光複合光柵400之投影方向上,第三穿孔431與第二穿孔421係部分重疊的。須說明的是,雖然第三穿孔431與第二穿孔421部分重疊,惟光線無法經由第三穿 孔431、第一穿孔411與第二穿孔421,直接穿過紫外光複合光柵400。 Please refer to FIG. 4A and FIG. 4B at the same time, wherein FIG. 4A is a three-dimensional schematic view of an ultraviolet composite grating according to some embodiments of the present disclosure, and FIG. 4B is a cross-sectional view of FIG. 4A according to some embodiments of the present disclosure. A schematic cross-sectional view of a UV composite grating cut by tangent line AA '. The ultraviolet composite grating 400 includes a third grid 430, a first grid 410, and a second grid 420. The second grid 420 is aligned and parallel to the first grid 410, and the third grid 430 is aligned with the first grid 410 and the second grid 420, where the first grid 410 is disposed in the second grid Between the grid 420 and the third grid 430. The third grid 430 is provided with a plurality of third perforations 431, the first grid 410 is provided with a plurality of first perforations 411, and the second grid 420 is provided with a plurality of second perforations 421. The third perforation 431 is staggered from the first perforation 411, and the first perforation 411 is staggered from the second perforation 421. However, the third perforation 431 and the second perforation 421 are partially overlapped in a direction perpendicular to the projection direction of the ultraviolet composite grating 400. It should be noted that although the third perforation 431 and the second perforation 421 partially overlap, the light cannot pass through the third perforation. The hole 431, the first through hole 411 and the second through hole 421 pass directly through the ultraviolet composite grating 400.

第三格柵430、第一格柵410與第二格柵420之一者係由不透光材料所製成,且其餘者係由濾光材料所製成。在一些實施例中,不透光材料可包含但不限於鋁、其他適當之不透光材料或上述材料之任意混合。此濾光材料可濾除波長小於180nm之紫外光。在一些實施例中,濾光材料可包含但不限於石英材料、藍寶石材料、其他適當之濾光材料或上述材料之任意混合。在一些具體例中,石英材料可包含但不限於商品名為GE Type 214之熔融石英、商品名為GE Type 219之熔融石英、其他可濾除波長小於180nm之紫外光的石英材料或上述材料之任意組合。於紫外光複合光柵400中,由於第三格柵430、第一格柵410與第二格柵420之一者係由不透光材料所製成,且其餘為前述之濾光材料所製成,加以第三穿孔431錯開第一穿孔411,且第一穿孔411錯開第二穿孔421,故紫外光複合光柵400可濾除波長小於180nm之紫外光。在一些實施例中,藉由第一穿孔411、第二穿孔421與第三穿孔431之排列位置,第一格柵410、第二格柵420與第三格柵430之一者可由濾光材料所製成(簡稱為濾光格柵),且其餘係由不透光材料所製成(簡稱為不透光格柵),其中光線可通過不透光格柵之穿孔,並照射至濾光格柵之本體(亦即不穿過濾光格柵之穿孔),以濾除波長小於180nm之紫外光。 One of the third grid 430, the first grid 410, and the second grid 420 is made of an opaque material, and the other is made of a filter material. In some embodiments, the opaque material may include, but is not limited to, aluminum, other suitable opaque materials, or any combination of the foregoing. This filter material can filter out ultraviolet light with a wavelength less than 180nm. In some embodiments, the filter material may include, but is not limited to, a quartz material, a sapphire material, other suitable filter materials, or any combination of the foregoing materials. In some specific examples, the quartz material may include, but is not limited to, fused silica with a trade name of GE Type 214, fused silica with a trade name of GE Type 219, other quartz materials that can filter out ultraviolet light with a wavelength less than 180 nm, or the above materials random combination. In the ultraviolet composite grating 400, one of the third grid 430, the first grid 410, and the second grid 420 is made of an opaque material, and the rest is made of the aforementioned filter material. The third perforation 431 is offset from the first perforation 411, and the first perforation 411 is offset from the second perforation 421, so the ultraviolet light composite grating 400 can filter out ultraviolet light with a wavelength less than 180 nm. In some embodiments, one of the first grille 410, the second grille 420, and the third grille 430 may be made of a filter material by the positions of the first perforations 411, the second perforations 421, and the third perforations 431. Made of (abbreviated as a filter grid), and the rest are made of opaque material (abbreviated as an opaque grid), in which light can pass through the perforations of the opaque grid and shine to the filter The body of the grid (that is, the perforation that does not pass through the filter light grid) to filter out ultraviolet light with a wavelength less than 180 nm.

第三格柵430與第一格柵410間之距離D13實質係大於0公釐且小於或等於4公釐,且第一格柵410與第二格柵420間之距離D12實質係大於0公釐且小於或等於4公釐。若距離D13及/或距離D12大於4公釐時,波長小於180nm之紫外光易經由第三穿孔431、第一穿孔411與第二穿孔421,直接穿過紫外光複合光柵400。若前述之距離D13及/或距離D12等於0公釐,且紫外光複合光柵400應用於電漿裝置時,自由基無法經由第三穿孔431、第一穿孔411與第二穿孔421,間接漫射通過紫外光複合光柵400。在一些實施例中,第三格柵430與第一格柵410間之距離D13實質係大於1公釐且小於或等於3公釐。在一些實施例中,第三格柵430與第一格柵410間之距離D13實質係2公釐。在一些實施例中,第一格柵410與第二格柵420間之距離D12實質係大於1公釐且小於或等於3公釐。在一些實施例中,第一格柵410與第二格柵420間之距離D12實質係2公釐。 The distance D 13 between the third grid 430 and the first grid 410 is substantially greater than 0 mm and less than or equal to 4 mm, and the distance D 12 between the first grid 410 and the second grid 420 is substantially greater than 0 mm and less than or equal to 4 mm. If the distance D 13 and / or the distance D 12 is greater than 4 mm, the ultraviolet light with a wavelength less than 180 nm can easily pass through the ultraviolet composite grating 400 through the third perforation 431, the first perforation 411 and the second perforation 421. If the foregoing distance D 13 and / or distance D 12 is equal to 0 mm, and the ultraviolet composite grating 400 is applied to a plasma device, radicals cannot pass through the third perforation 431, the first perforation 411, and the second perforation 421, indirectly. Diffuse through the ultraviolet light composite grating 400. In some embodiments, the distance D 13 between the third grid 430 and the first grid 410 is substantially greater than 1 mm and less than or equal to 3 mm. In some embodiments, the distance D 13 between the third grid 430 and the first grid 410 is substantially 2 mm. In some embodiments, the distance D 12 between the first grid 410 and the second grid 420 is substantially greater than 1 mm and less than or equal to 3 mm. In some embodiments, the distance D 12 between the first grid 410 and the second grid 420 is substantially 2 mm.

第三穿孔431、第一穿孔411與第二穿孔421之孔徑W3、W1與W2分別實質為3公釐至4公釐。若孔徑W3、W1與/或W2大於4公釐時,過大之穿孔孔徑W3、W1與/或W2易使紫外光經由第三穿孔431、第一穿孔411與第二穿孔421,直接穿過紫外光複合光柵400。雖然可藉由降低穿孔密集度,消除穿孔孔徑過大之缺陷,惟過於稀疏之穿孔將降低自由基漫射通過紫外光複合光柵400之數量,而降低其效益。若孔徑W3、W1與/或W2小於3公釐時,過窄之穿孔孔徑W3、W1與/或W2使得自由基不易漫射通過紫外光複合光 柵400,而降低對光阻層之移除效率。雖然可藉由增加穿孔密集度提升穿孔數量,惟過於密集之穿孔將降低格柵之機械強度,而使格柵於抽真空過程中崩壞碎裂。此外,過於密集之穿孔亦大幅增加第三穿孔431、第一穿孔411與第二穿孔421之重疊機率,而使紫外光經由穿孔重疊之區域,直接通過紫外光複合光柵400。 The apertures W 3 , W 1, and W 2 of the third perforations 431, the first perforations 411, and the second perforations 421 are substantially 3 mm to 4 mm, respectively. If the apertures W 3 , W 1 and / or W 2 are larger than 4 mm, an excessively large perforation aperture W 3 , W 1 and / or W 2 may easily cause ultraviolet light to pass through the third perforation 431, the first perforation 411 and the second perforation. 421, directly pass through the ultraviolet composite grating 400. Although the defect of excessive perforation can be eliminated by reducing the perforation density, the excessively sparse perforation will reduce the amount of free radical diffusion through the ultraviolet composite grating 400 and reduce its efficiency. If the apertures W 3 , W 1 and / or W 2 are less than 3 mm, the excessively narrow perforation apertures W 3 , W 1 and / or W 2 make it difficult for the free radicals to diffuse through the ultraviolet composite grating 400 and reduce light exposure. Removal efficiency of the barrier layer. Although the number of perforations can be increased by increasing the density of perforations, excessively dense perforations will reduce the mechanical strength of the grille and cause the grille to collapse and crack during the vacuuming process. In addition, the excessively dense perforations also greatly increase the overlapping probability of the third perforations 431, the first perforations 411, and the second perforations 421, so that the ultraviolet light passes directly through the ultraviolet composite grating 400 through the overlapping areas of the perforations.

請同時參照圖5A與圖5B,其中圖5A係繪示根據本揭露之一些實施例之電漿裝置之剖面示意圖,且圖5B係繪示係繪示根據本揭露之一些實施例之圖5A之電漿裝置產生電漿時,紫外光複合光柵的剖面示意圖。電漿裝置500包含真空腔體510、電漿槽520、氣體輸入管513、加熱裝置530、紫外光複合光柵550及射頻線圈560。真空腔體510之頂端510a設有氣體入口511,且加熱裝置530設置於真空腔體510之底端510b,其中加熱裝置530係配置以加熱半導體晶圓540,且半導體晶圓540放置於加熱裝置530之加熱面530a上。電漿槽520係設置於真空腔體510中,且電漿槽520係設置於真空腔體510之氣體入口511與加熱裝置530之間,其中電漿槽520之內部空間係連通真空腔體510之內部空間,以使電漿槽520之真空度相等於真空腔體510之真空度。氣體輸入管513係穿過真空腔體510之氣體入口511,並穿過電漿槽520之頂端520a,伸入至其中,以沿著方向513a,將氣體輸入至電漿槽520中。紫外光複合光柵550設置於真空腔體510之氣體入口511及加熱裝置530之間,且紫外光複合光柵550設置於電漿槽520之底端520b, 並完整覆蓋電漿槽520之底端520b。射頻線圈560係設置於真空腔體510之氣體入口511與紫外光複合光柵550之間,其中射頻線圈560設置於電漿槽520之頂端520a與底端520b之間,並纏繞於電漿槽520外。對應於射頻線圈560之纏繞位置,電漿槽520之內部具有電漿區域520c。可理解的是,電漿區域520c係指氣體經由氣體輸入管513輸入至電漿槽520中時,因電磁場作用,氣體解離形成為電漿之區域。在一些實施例中,氣體可包含但不限於NO、CO、CF、CF2、He、Cl2、CCl、BCl、其他可解離形成為包含自由基及紫外光光子(波長小於300nm)之電漿的氣體,或者上述氣體之任意組合。 Please refer to FIGS. 5A and 5B at the same time, wherein FIG. 5A is a schematic cross-sectional view of a plasma device according to some embodiments of the present disclosure, and FIG. 5B is a schematic view of FIG. 5A according to some embodiments of the present disclosure. A schematic cross-sectional view of an ultraviolet composite grating when a plasma device generates a plasma. The plasma device 500 includes a vacuum cavity 510, a plasma tank 520, a gas input pipe 513, a heating device 530, an ultraviolet composite grating 550, and a radio frequency coil 560. A gas inlet 511 is provided at the top 510a of the vacuum cavity 510, and a heating device 530 is provided at the bottom 510b of the vacuum cavity 510. The heating device 530 is configured to heat the semiconductor wafer 540, and the semiconductor wafer 540 is placed in the heating device. The heating surface 530a of 530. The plasma tank 520 is disposed in the vacuum chamber 510, and the plasma tank 520 is disposed between the gas inlet 511 and the heating device 530 of the vacuum chamber 510. The internal space of the plasma tank 520 is connected to the vacuum chamber 510. The internal space is such that the vacuum degree of the plasma tank 520 is equal to the vacuum degree of the vacuum cavity 510. The gas input pipe 513 passes through the gas inlet 511 of the vacuum chamber 510 and passes through the top end 520a of the plasma tank 520 and extends into it to input gas into the plasma tank 520 along the direction 513a. The ultraviolet composite grating 550 is disposed between the gas inlet 511 and the heating device 530 of the vacuum cavity 510, and the ultraviolet composite grating 550 is disposed at the bottom end 520b of the plasma tank 520 and completely covers the bottom end 520b of the plasma tank 520. . The RF coil 560 is disposed between the gas inlet 511 of the vacuum cavity 510 and the ultraviolet composite grating 550. The RF coil 560 is disposed between the top end 520a and the bottom end 520b of the plasma tank 520 and is wound around the plasma tank 520 outer. Corresponding to the winding position of the RF coil 560, a plasma region 520c is provided inside the plasma groove 520. It can be understood that the plasma region 520c refers to a region where the gas is dissociated into a plasma when the gas is input into the plasma tank 520 through the gas input pipe 513. In some embodiments, the gas may include, but is not limited to, NO, CO, CF, CF 2 , He, Cl 2 , CCl, BCl, and other plasmas that can be dissociated to include free radicals and ultraviolet photons (wavelengths less than 300 nm) Gas, or any combination of the above.

紫外光複合光柵550係平行於加熱裝置530之加熱面530a,故紫外光複合光柵550平行於半導體晶圓540。在一些實施例中,紫外光複合光柵550之垂直投影面積實質大於或等於半導體晶圓540之垂直投影面積。如圖5B所,紫外光複合光柵550包含上格柵551及下格柵552,且上格柵551對準並平行於下格柵552。上格柵551設有複數個第一穿孔551a,且下格柵552設有複數個第二穿孔552a,其中第一穿孔551a錯開第二穿孔552a,以使光線無法經由第一穿孔551a與第二穿孔552a,直接穿過紫外光複合光柵550。上格柵551及下格柵552之一者係由不透光材料所製成,且另一者係由濾光材料所製成,其中此濾光材料可濾除波長小於180nm之紫外光。在一些實施例中,不透光材料可包含但不限於鋁、其他適當之不透光材料或上述材 料之任意混合。在一些實施例中,濾光材料可包含但不限於石英材料、藍寶石材料、其他適當之濾光材料或上述材料之任意混合。在一些具體例中,石英材料可包含但不限於商品名為GE Type 214之熔融石英、商品名為GE Type 219之熔融石英、其他可濾除波長小於180nm之紫外光的石英材料或上述材料之任意組合。 The ultraviolet composite grating 550 is parallel to the heating surface 530a of the heating device 530, so the ultraviolet composite grating 550 is parallel to the semiconductor wafer 540. In some embodiments, the vertical projection area of the ultraviolet composite grating 550 is substantially greater than or equal to the vertical projection area of the semiconductor wafer 540. As shown in FIG. 5B, the ultraviolet composite grating 550 includes an upper grid 551 and a lower grid 552, and the upper grid 551 is aligned and parallel to the lower grid 552. The upper grille 551 is provided with a plurality of first perforations 551a, and the lower grille 552 is provided with a plurality of second perforations 552a, wherein the first perforations 551a are staggered from the second perforations 552a so that light cannot pass through the first perforations 551a and the second The perforation 552a passes directly through the ultraviolet composite grating 550. One of the upper grid 551 and the lower grid 552 is made of an opaque material, and the other is made of a filter material, wherein the filter material can filter out ultraviolet light with a wavelength less than 180 nm. In some embodiments, the opaque material may include, but is not limited to, aluminum, other suitable opaque materials, or the foregoing materials. Mix the materials randomly. In some embodiments, the filter material may include, but is not limited to, a quartz material, a sapphire material, other suitable filter materials, or any combination of the foregoing materials. In some specific examples, the quartz material may include, but is not limited to, fused silica with a trade name of GE Type 214, fused silica with a trade name of GE Type 219, other quartz materials that can filter out ultraviolet light with a wavelength less than 180 nm, or the above materials random combination.

在一些實施例中,上格柵551與下格柵552間之距離D12實質係大於0公釐且小於或等於4公釐。在一些實施例中,上格柵551與下格柵552間之距離D12實質係大於1公釐且小於或等於3公釐。在一些實施例中,上格柵551與下格柵552間之距離D12實質係2公釐。在一些實施例中,第一穿孔551a之孔徑W1與第二穿孔552a之孔徑W2分別實質為3公釐至4公釐。在一些實施例中,第一穿孔551a之孔徑W1與第二穿孔552a之孔徑W2分別實質為3.4公釐至3.5公釐。 In some embodiments, the distance D 12 between the upper grille 551 and the lower grille 552 is substantially greater than 0 mm and less than or equal to 4 mm. In some embodiments, the distance D 12 between the upper grille 551 and the lower grille 552 is substantially greater than 1 mm and less than or equal to 3 mm. In some embodiments, the distance D 12 between the upper grill 551 and the lower grill 552 is substantially 2 mm. In some embodiments, the perforations 551a of the first and second perforated aperture W 1 W 2 have an aperture 552a of the substance is 3 mm to 4 mm. In some embodiments, the perforations 551a of the first aperture and the second aperture of the hole W 1 W 2 have substantial 552a of 3.4 mm to 3.5 mm.

在一些實施例中,紫外光複合光柵550可包含至少一輔助格柵,此輔助格柵可對準並平行於上格柵551與下格柵552。其中,至少一輔助格柵分別設有複數個第三穿孔,且此些第三穿孔錯開第一穿孔與第二穿孔。在一些實施例中,輔助格柵可設置於上格柵551與下格柵552之間。在一些實施例中,輔助格柵可設置於上格柵551之上,或者下格柵552之下。在一些實施例中,輔助格柵可由濾光材料所製成,且此濾光材料係相同於前述之濾光材料。 In some embodiments, the ultraviolet composite grating 550 may include at least one auxiliary grid, and the auxiliary grid may be aligned and parallel to the upper grid 551 and the lower grid 552. Wherein, at least one auxiliary grille is respectively provided with a plurality of third perforations, and the third perforations are staggered from the first perforations and the second perforations. In some embodiments, the auxiliary grille may be disposed between the upper grille 551 and the lower grille 552. In some embodiments, the auxiliary grille may be disposed above the upper grille 551 or below the lower grille 552. In some embodiments, the auxiliary grid may be made of a filter material, and the filter material is the same as the aforementioned filter material.

舉例而言,請繼續參照圖5A與圖5B。其中,為了便於說明與理解,圖5B之上格柵551係由不透光材料所 製成,且圖5B之下格柵552係由濾光材料所製成。可理解的是,前述上格柵551與下格柵552之材料僅係便於說明,並非用以限制本案。本案所屬技術領域具有通常知識者對於上格柵551與下格柵552之材料可適度變化。當真空腔體510與電漿槽520之真空度到達設定值時,將氣體經由氣體輸入管513並沿著方向513a輸入至電漿槽520中,並對射頻線圈施加電壓,所輸入之氣體即可於電漿區域520c形成電漿。 For example, please continue to refer to FIGS. 5A and 5B. Among them, for the convenience of explanation and understanding, the grid 551 above FIG. 5B is made of an opaque material. 5B is made of a filter material. It can be understood that the materials of the upper grille 551 and the lower grille 552 are only for convenience of explanation, and are not intended to limit the present case. Those with ordinary knowledge in the technical field to which this case belongs can appropriately change the materials of the upper grille 551 and the lower grille 552. When the vacuum degree between the vacuum cavity 510 and the plasma tank 520 reaches the set value, the gas is input into the plasma tank 520 through the gas input pipe 513 and along the direction 513a, and a voltage is applied to the RF coil, and the input gas is A plasma may be formed in the plasma region 520c.

當氣體解離為電漿時,電漿可包含光子571及自由基573等。光子571係以路徑571a直線前進。其中,當光子571照射至不透光之上格柵551時,由於不透光材料(例如:鋁)之反射特性,光子571係以路徑571b反射。再者,當光子571穿過第一穿孔551a,並照射至下格柵552時,由於濾光材料(例如:石英材料)之濾光特性,波長小於180nm之紫外光係被濾除,且波長大於或等於180nm之紫外光係以路徑571c繼續前進,並照射至半導體晶圓540,以對其表面進行處理。前述之自由基573係以路徑573a漫射通過上格柵551之第一穿孔551a及下格柵552之第二穿孔552a,以穿過紫外光複合光柵550,並對半導體晶圓540之表面進行處理。 When the gas is dissociated into a plasma, the plasma may include photons 571, radicals 573, and the like. The photon 571 travels straight along the path 571a. Among them, when the photon 571 is irradiated onto the opaque upper grid 551, the photon 571 is reflected by the path 571b due to the reflection characteristics of the opaque material (for example, aluminum). Furthermore, when the photon 571 passes through the first perforation 551a and is irradiated to the lower grid 552, due to the filtering characteristics of the filter material (for example, quartz material), ultraviolet light having a wavelength less than 180 nm is filtered out, and the wavelength is Ultraviolet light greater than or equal to 180 nm continues on path 571c and is irradiated onto semiconductor wafer 540 to process the surface thereof. The aforementioned radical 573 is diffused through the first perforation 551a of the upper grid 551 and the second perforation 552a of the lower grid 552 by a path 573a to pass through the ultraviolet composite grating 550, and the surface of the semiconductor wafer 540 deal with.

在一些實施例中,舉例而言,當所通入之氣體為氧氣與氮氣之混合氣體時,解離所形成之電漿包含自由基及波長小於300nm之紫外光光子。其中,自由基可藉由漫射作用,穿過紫外光複合光柵,並移除半導體晶圓表面上之光阻。當紫外光光子通過紫外光複合光柵時,波長小於180 nm之紫外光會被濾除,且波長大於或等於180nm之紫外光可照射半導體晶圓,並復原半導體晶圓中之矽缺陷,例如:空缺(vancacy)及/或雙空缺(divancacy)等,而提升半導體晶圓之品質。在一些實施例中,前述氧氣與氮氣之比值實質為10:1至1:1。在一些實施例中氧氣與氮氣之比值實質為10:1至2:1。若前述氧氣之使用量小於氮氣之使用量時,光阻之移除速率係降低,而降低光阻之移除效率。若前述氧氣與氮氣之比值係大於10:1時,於此混合氣體所解離之氮氧化物電漿中,紫外光光子之光譜強度較弱,而降低電漿處理之效益。 In some embodiments, for example, when the gas is a mixed gas of oxygen and nitrogen, the plasma formed by dissociation includes radicals and ultraviolet photons with a wavelength less than 300 nm. Among them, the free radicals can pass through the ultraviolet composite grating by diffusion and remove the photoresist on the surface of the semiconductor wafer. When UV photons pass through the UV composite grating, the wavelength is less than 180 UV light at nm will be filtered out, and UV light with a wavelength greater than or equal to 180 nm can illuminate the semiconductor wafer and restore silicon defects in the semiconductor wafer, such as: vacancy (vancacy) and / or double vacancy (divancacy), And improve the quality of semiconductor wafers. In some embodiments, the aforementioned ratio of oxygen to nitrogen is substantially 10: 1 to 1: 1. In some embodiments, the ratio of oxygen to nitrogen is substantially 10: 1 to 2: 1. If the amount of oxygen used is less than the amount of nitrogen, the removal rate of the photoresist is reduced, and the removal efficiency of the photoresist is reduced. If the aforementioned ratio of oxygen to nitrogen is greater than 10: 1, in the nitrogen oxide plasma dissociated by the mixed gas, the spectral intensity of the ultraviolet photons is weak, and the benefit of the plasma treatment is reduced.

舉例而言,在一些實施例中,當氧氣與氮氣之混合氣體(其中氧氣與氮氣之比值為1:1)通入電漿槽中時,解離所形成之氮氧化物電漿具有波長為200nm至300nm之紫外光光子。由於波長為254nm之紫外光的光子能量約為4.9eV,且此光子能量與矽原子之鍵結能量相當,故波長為254nm之紫外光可誘使被其所照射之矽晶圓的矽原子重新形成鍵結,進而可回復空缺及/或雙空缺等矽缺陷。 For example, in some embodiments, when a mixed gas of oxygen and nitrogen (wherein the ratio of oxygen to nitrogen is 1: 1) is passed into the plasma tank, the nitrogen oxide plasma formed by dissociation has a wavelength of 200 nm to 300nm UV Photon. Since the photon energy of ultraviolet light with a wavelength of 254nm is about 4.9eV, and this photon energy is equivalent to the bonding energy of silicon atoms, the ultraviolet light with a wavelength of 254nm can induce the silicon atoms of the silicon wafer irradiated by it A bond is formed to recover silicon defects such as vacancies and / or double vacancies.

熟習此技藝者應了解到,並非所有優點須已於此討論,對於所有實施例或例子,沒有特定之優點係必須的,且其他實施例或例子可提供不同之優點。 Those skilled in the art should understand that not all advantages must be discussed here. For all embodiments or examples, no specific advantage is necessary, and other embodiments or examples may provide different advantages.

根據本揭露之一態樣,提出一種紫外光複合光柵。此紫外光複合光柵包含第一格柵及第二格柵,其中第二格柵對準並平行於第一格柵。第一格柵設有複數個第一穿孔,且第二格柵設有複數個第二穿孔。此些第一穿孔錯開第 二穿孔。第一格柵係由不透光材料所製成。第二格柵係由濾光材料所製成,且此濾光材料可濾除波長小於180nm之紫外光。 According to one aspect of this disclosure, an ultraviolet light composite grating is proposed. The ultraviolet light composite grating includes a first grid and a second grid, wherein the second grid is aligned and parallel to the first grid. The first grille is provided with a plurality of first perforations, and the second grille is provided with a plurality of second perforations. These first perforations are staggered Two perforations. The first grid is made of an opaque material. The second grid is made of a filter material, and the filter material can filter out ultraviolet light with a wavelength less than 180 nm.

根據本揭露之另一態樣,提出一種電漿裝置。此電漿裝置包含真空腔體、加熱裝置、紫外光複合光柵、及射頻線圈。真空腔體之頂端設有氣體入口。加熱裝置係配置以加熱半導體晶圓,且加熱裝置設置於真空腔體之底端。紫外光複合光柵設置於氣體入口及加熱裝置之間,且紫外光複合光柵平行於加熱裝置之加熱面。紫外光複合光柵之垂直投影面積實質大於或等於半導體晶圓之垂直投影面積。此紫外光複合光柵包含上格柵及下格柵。下格柵對準並平行於上格柵。上格柵設有複數個第一穿孔,且下格柵設有複數個第二穿孔,其中第一穿孔錯開第二穿孔。上格柵及下格柵之一者係由不透光材料所製成,且另一者係由濾光材料所製成,其中濾光材料可濾除波長小於180nm之紫外光。射頻線圈設置於氣體入口及紫外光複合光柵之間。 According to another aspect of the present disclosure, a plasma device is proposed. The plasma device includes a vacuum cavity, a heating device, an ultraviolet light grating, and a radio frequency coil. A gas inlet is provided at the top of the vacuum cavity. The heating device is configured to heat the semiconductor wafer, and the heating device is disposed at the bottom end of the vacuum cavity. The ultraviolet composite grating is disposed between the gas inlet and the heating device, and the ultraviolet composite grating is parallel to the heating surface of the heating device. The vertical projection area of the ultraviolet composite grating is substantially larger than or equal to the vertical projection area of the semiconductor wafer. The ultraviolet light composite grating includes an upper grid and a lower grid. The lower grid is aligned and parallel to the upper grid. The upper grille is provided with a plurality of first perforations, and the lower grille is provided with a plurality of second perforations, wherein the first perforations are staggered from the second perforations. One of the upper grid and the lower grid is made of an opaque material, and the other is made of a filter material, wherein the filter material can filter out ultraviolet light with a wavelength less than 180 nm. The RF coil is arranged between the gas inlet and the ultraviolet light grating.

上述已概述數個實施例的特徵,因此熟習此技藝者可更了解本揭露之態樣。熟習此技藝者應了解到,其可輕易地利用本揭露做為基礎,來設計或潤飾其他製程與結構,以實現與在此所介紹之實施例相同之目的及/或達到相同的優點。熟習此技藝者也應了解到,這類對等架構並未脫離本揭露之精神和範圍,且熟習此技藝者可在不脫離本揭露之精神和範圍下,在此進行各種之更動、取代與修改。 The features of several embodiments have been outlined above, so those skilled in the art can better understand the aspects of this disclosure. Those skilled in the art should understand that they can easily use this disclosure as a basis to design or retouch other processes and structures to achieve the same purpose and / or achieve the same advantages as the embodiments described herein. Those skilled in the art should also understand that such peer-to-peer architecture does not depart from the spirit and scope of this disclosure, and those skilled in this art can make various changes, substitutions and substitutions without departing from the spirit and scope of this disclosure. modify.

Claims (10)

一種紫外光複合光柵,包含:一第一格柵,設有複數個第一穿孔,其中該第一格柵係由一不透光材料所製成;以及一第二格柵,對準並平行於該第一格柵,其中該第二格柵設有複數個第二穿孔,該些第二穿孔錯開該些第一穿孔,以使一光線無法直線地穿過該些第一穿孔與該些第二穿孔,該第二格柵係由一濾光材料所製成,該濾光材料濾除波長小於180nm之紫外光,該第一格柵與該第二格柵間之一距離實質係大於0且小於或等於4公釐。An ultraviolet light composite grating includes: a first grid provided with a plurality of first perforations, wherein the first grid is made of an opaque material; and a second grid aligned and parallel In the first grille, wherein the second grille is provided with a plurality of second perforations, the second perforations are staggered from the first perforations so that a light cannot pass straight through the first perforations and the plurality of A second perforation, the second grid is made of a filter material that filters out ultraviolet light with a wavelength less than 180 nm, and a distance between the first grid and the second grid is substantially greater than 0 and less than or equal to 4 mm. 如申請專利範圍第1項所述之紫外光複合光柵,其中每一該些第一穿孔與每一該些第二穿孔之一孔徑分別實質為3公釐至4公釐。According to the ultraviolet light composite grating described in item 1 of the scope of patent application, an aperture of each of the first perforations and each of the second perforations is substantially 3 mm to 4 mm, respectively. 如申請專利範圍第1項所述之紫外光複合光柵,其中該濾光材料包含石英材料。The ultraviolet composite grating according to item 1 of the patent application scope, wherein the filter material comprises a quartz material. 如申請專利範圍第1項所述之紫外光複合光柵,更包含:至少一第三格柵,對準並平行於該第一格柵及該第二格柵,且該至少一第三格柵分別設有複數個第三穿孔,其中該些第三穿孔錯開該些第一穿孔或該些第二穿孔。The ultraviolet composite grating according to item 1 of the patent application scope, further comprising: at least a third grid, aligned and parallel to the first grid and the second grid, and the at least one third grid A plurality of third perforations are respectively provided, wherein the third perforations are staggered from the first or second perforations. 如申請專利範圍第4項所述之紫外光複合光柵,其中每一該至少一第三格柵係由一濾光材料所製成。The ultraviolet light composite grating according to item 4 of the scope of the patent application, wherein each of the at least one third grid is made of a filter material. 一種電漿裝置,包含:一真空腔體,其中該真空腔體之一頂端設有一氣體入口;一加熱裝置,配置以加熱一半導體晶圓,且該加熱裝置設於該真空腔體之一底端;一紫外光複合光柵,設於該氣體入口及該加熱裝置之間,並平行於該加熱裝置之一加熱面,其中該紫外光複合光柵之一垂直投影面積實質大於或等於該半導體晶圓之一垂直投影面積,且該紫外光複合光柵包含:一上格柵,設有複數個第一穿孔;以及一下格柵,對準並平行於該上格柵,且該下格柵設有複數個第二穿孔,其中該些第二穿孔錯開該些第一穿孔,以使一光線無法直線地穿過該些第一穿孔與該些第二穿孔,該上格柵及該下格柵之一者係由一不透光材料所製成,且該上格柵及該下格柵之另一者係由一濾光材料所製成,且該濾光材料濾除波長小於180nm之紫外光,其中該上格柵與該下格柵間之一距離實質係大於0且小於或等於4公釐;以及一射頻線圈,設於該氣體入口及該紫外光複合光柵之間。A plasma device includes: a vacuum chamber, wherein a gas inlet is provided at a top end of one of the vacuum chambers; a heating device is configured to heat a semiconductor wafer, and the heating device is arranged on a bottom of the vacuum chamber An ultraviolet composite grating is disposed between the gas inlet and the heating device and is parallel to a heating surface of the heating device, wherein a vertical projection area of one of the ultraviolet composite gratings is substantially greater than or equal to the semiconductor wafer A vertical projection area, and the ultraviolet composite grating includes: an upper grille provided with a plurality of first perforations; and a lower grille aligned and parallel to the upper grille, and the lower grille is provided with a plurality of Second perforations, wherein the second perforations are staggered from the first perforations, so that a light cannot pass straight through the first perforations and the second perforations, one of the upper grille and the lower grille One is made of an opaque material, and the other of the upper grille and the lower grille is made of a filter material, and the filter material filters out ultraviolet light with a wavelength less than 180 nm, Wherein the upper grille and the lower grille One line from the spirit of greater than 0 and less than or equal to 4 mm; and a radio frequency coil disposed between the gas inlet and the composite grating the UV light. 如申請專利範圍第6項所述之電漿裝置,其中每一該些第一穿孔與每一該些第二穿孔之一孔徑分別實質為3公釐至4公釐。According to the plasma device described in item 6 of the scope of patent application, a hole diameter of each of the first perforations and each of the second perforations is substantially 3 mm to 4 mm, respectively. 如申請專利範圍第6項所述之電漿裝置,其中該濾光材料包含石英材料。The plasma device according to item 6 of the patent application scope, wherein the filter material comprises a quartz material. 如申請專利範圍第6項所述之電漿裝置,其中該紫外光複合光柵更包含:至少一輔助格柵,對準並平行於該上格柵及該下格柵,且該至少一輔助格柵分別設有複數個第三穿孔,其中該些第三穿孔錯開該些第一穿孔或該些第二穿孔。The plasma device according to item 6 of the patent application scope, wherein the ultraviolet light composite grating further comprises: at least one auxiliary grid, aligned and parallel to the upper grid and the lower grid, and the at least one auxiliary grid The grid is respectively provided with a plurality of third perforations, wherein the third perforations are staggered from the first perforations or the second perforations. 如申請專利範圍第9項所述之電漿裝置,其中每一該至少一輔助格柵係由一濾光材料所製成。The plasma device according to item 9 of the scope of the patent application, wherein each of the at least one auxiliary grid is made of a filter material.
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Citations (1)

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TW201611113A (en) * 2014-09-11 2016-03-16 Hitachi High Tech Corp Plasma processing method

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Publication number Priority date Publication date Assignee Title
TW201611113A (en) * 2014-09-11 2016-03-16 Hitachi High Tech Corp Plasma processing method

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Title
Seiji Samukawa,On-wafer UV Sensor and Prediction of UV Irradiation Damage,Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System,pp 5-18,29 January 2014。
SEIJI SAMUKAWA: "On-wafer UV Sensor and Prediction of UV Irradiation Damage,Feature Profile Evolution in Plasma", PROCESSING USING ON-WAFER MONITORING SYSTEM, 29 January 2014 (2014-01-29), pages 5 - 18 *

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