TWI655698B - Magnetic coupling package structure for inductive coupling isolator based on duo leadframes and method for manufacturing the same - Google Patents

Magnetic coupling package structure for inductive coupling isolator based on duo leadframes and method for manufacturing the same Download PDF

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TWI655698B
TWI655698B TW107100527A TW107100527A TWI655698B TW I655698 B TWI655698 B TW I655698B TW 107100527 A TW107100527 A TW 107100527A TW 107100527 A TW107100527 A TW 107100527A TW I655698 B TWI655698 B TW I655698B
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lead
lead frames
wafer
coil
magnetic coupling
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TW201931479A (en
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又法 王
賴巍文
林普瀚
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新加坡商光寶科技新加坡私人有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Manufacturing Cores, Coils, And Magnets (AREA)

Abstract

本發明公開一種用於磁耦合隔離器的雙引線架磁耦合封裝結構及其製造方法。製造方法包括引線架提供步驟、晶片連接步驟及線圈對位步驟。引線架提供步驟包括提供第一及第二組引線架,第一及第二組引線架都包括晶片承載部、線圈部、引腳部及浮動引腳。晶片連接步驟包括將第一及第二晶片設置在晶片承載部上且分別電性連接於引腳部。線圈對位步驟包括將第一組引線架設置在第二組引線架的上方或下方,並分別施加第一及第二磁場至第一與第二組引線架,以使兩組線圈部相互對位。藉此,得以控制兩組線圈部相互匹配後所產生的磁耦合效果。 The invention discloses a double lead frame magnetic coupling package structure for a magnetic coupling isolator and a manufacturing method thereof. The manufacturing method includes a lead frame providing step, a wafer connecting step, and a coil alignment step. The lead frame providing step includes providing the first and second sets of lead frames, and the first and second sets of lead frames each include a wafer carrying portion, a coil portion, a lead portion, and a floating pin. The wafer bonding step includes disposing the first and second wafers on the wafer carrier and electrically connecting to the lead portions, respectively. The coil alignment step includes disposing the first set of lead frames above or below the second set of lead frames, and applying the first and second magnetic fields to the first and second sets of lead frames, respectively, so that the two sets of coil portions are opposite each other Bit. Thereby, it is possible to control the magnetic coupling effect produced by the two sets of coil portions being matched with each other.

Description

用於磁耦合隔離器的雙引線架磁耦合封裝結構及其製造方法 Double lead frame magnetic coupling package structure for magnetic coupling isolator and manufacturing method thereof

本發明涉及一種磁耦合封裝結構及其製造方法,特別是涉及用於磁耦合隔離器的雙引線架磁耦合封裝結構及其製造方法。 The present invention relates to a magnetically coupled package structure and a method of fabricating the same, and more particularly to a dual leadframe magnetically coupled package structure for a magnetically coupled isolator and a method of fabricating the same.

在一些工業應用領域中,為了在使用者介面維持安全的電壓並預防暫態(transient)自信號來源傳輸至低壓電路諸如電腦、微處理器等處,在低電壓電路與高電壓電路之前,需要採用電性絕緣(galvanic isolation)技術。當兩個電路之間有多於一個導電路徑時,接地迴路通常會存在,而多個接地路徑的存在會產生會影響系統效能的電流途徑。通常,電性絕緣是被應用以斷開接地迴路。在現有技術中,有三種主要的隔離技術:LED和光感測器構成的光電耦合隔離器(Optocouplers)、電容耦合隔離器(Capacitive coupled isolators)以及磁耦合隔離器(Magnetic coupled isolators)。 In some industrial applications, in order to maintain a safe voltage in the user interface and prevent transient transmission from the signal source to low voltage circuits such as computers, microprocessors, etc., before low voltage circuits and high voltage circuits, Adopt galvanic isolation technology. When there is more than one conductive path between two circuits, the ground loop usually exists, and the presence of multiple ground paths creates a current path that affects system performance. Typically, electrical insulation is applied to disconnect the ground loop. In the prior art, there are three main isolation technologies: Optocouplers composed of LEDs and photo sensors, Capacitive coupled isolators, and Magnetically coupled isolators.

在光電耦合器中,電子輸入信號驅動LED發光產生光學信號,光學信號通過電性絕緣材料並照射於光感測器上,而光感測器則再將光學信號轉換為電子信號。電容耦合絕緣器是利用具有小電容值的高壓電容以阻隔DC電子信號,但允許高頻信號通過,從而達到電性絕緣(galvanic isolation)的目的。 In the optocoupler, the electronic input signal drives the LED to emit an optical signal, the optical signal passes through the electrically insulating material and illuminates the photosensor, and the photo sensor converts the optical signal into an electrical signal. Capacitively coupled insulators use high-voltage capacitors with small capacitance values to block DC electronic signals, but allow high-frequency signals to pass, thereby achieving galvanic isolation.

磁耦合隔離器包括傳輸器(transmitter)、接收器(receiver)以及 在其等之間傳遞信號的通訊單元。採用誘導耦合(inductive coupling)或是磁耦合(magnetic coupling)來達到在傳輸器以及接收器之間傳遞信號的效果。 Magnetically coupled isolators include transmitters, receivers, and receivers A communication unit that passes signals between them. Inductive coupling or magnetic coupling is used to achieve the effect of transmitting signals between the transmitter and the receiver.

磁耦合隔離器通常包括在高頻下運作的驅動電路、一對尺寸在微米(μm)及毫米(mm)之間的線圈,以及高頻接收器。其中一組線圈(第一線圈)連接於驅動電路的輸出端,另一組線圈(第二線圈)則連接於接收器的輸入端。兩組線圈彼此電性絕緣(galvanic isolated),因此其等之間不具有電連接。在運作時,來自驅動電路的高頻信號通過第一線圈被轉換為高頻磁場,並通過磁耦合傳輸至第二線圈。第二線圈將所接收到的磁信號轉換為高頻電壓並輸入接收電路。 Magnetically coupled isolators typically include a driver circuit that operates at high frequencies, a pair of coils between microns (μm) and millimeters (mm), and a high frequency receiver. One set of coils (first coil) is connected to the output of the drive circuit, and the other set of coils (second coil) is connected to the input of the receiver. The two sets of coils are galvanic isolated from each other so that there is no electrical connection between them. In operation, the high frequency signal from the drive circuit is converted to a high frequency magnetic field by the first coil and transmitted to the second coil by magnetic coupling. The second coil converts the received magnetic signal into a high frequency voltage and inputs it to the receiving circuit.

在現有技術中,在線圈之間具有耦合效果的磁耦合封裝結構有兩種主要的結構設計:(1)直接在晶片上形成耦合線圈(例如ADI公司所採用的技術),或是(2)在同一個引線架的平面上形成兩個尺寸相對較小的線圈來達到耦合效果(例如PI(Power integration)公司所採用的技術)。然而,上述設計都各自具有其缺點。具體來說,直接在晶片上形成線圈有一定的技術困難度,比較難以達到工業界對超高電壓絕緣的要求。換句話說,在此技術領域中,對半導體製造技術有很高的要求而具有較高的價格。而在單一個引線架平面上形成兩個相互匹配的線圈不但線圈的尺寸受到限制,耦合效率也會被限制,基於其結構設計,其僅能用以生產單通道器件,而無法製造多於二個通道的多通道器件。 In the prior art, there are two main structural designs for the magnetic coupling package structure having coupling effects between the coils: (1) forming a coupling coil directly on the wafer (for example, the technology used by Analog Devices), or (2) Two relatively small coils are formed on the plane of the same lead frame to achieve coupling effects (for example, the technology used by PI (Power integration)). However, each of the above designs has its drawbacks. Specifically, forming a coil directly on a wafer has a certain degree of technical difficulty, and it is relatively difficult to meet the industrial requirements for ultra-high voltage insulation. In other words, in this technical field, there is a high demand for semiconductor manufacturing technology and a high price. The formation of two matching coils on a single lead frame plane not only limits the size of the coil, but also limits the coupling efficiency. Based on its structural design, it can only be used to produce single-channel devices, and cannot be manufactured more than two. Multichannel devices with channels.

除此之外,為了達到兩組線圈之間有效的耦合效果,需要精確設計兩組線圈在橫向的設置相對位置以及在垂直方向的間距,以使兩組線圈在橫向相互對準。同時,還必須將兩組線圈的間距被控制在設計範圍裡。如此一來,可以調節分別設置有兩組線圈的兩個引線架組件的隔離距離,進而調節兩組線圈彼此電性絕緣(galvanic islolated)的效果。在現有技術中,仍然缺乏製作程序簡 單且可以輕易調整兩組線圈之間耦合量的製造方法與引線架組件。再者,如前所述,有需要提供一種磁耦合封裝結構以及其製造方法,以通過簡易的方式來製造多通道器件。換句話說,現有技術的磁耦合封裝結構及其製造方法仍具有改善的空間。 In addition, in order to achieve an effective coupling effect between the two sets of coils, it is necessary to accurately design the relative positions of the two sets of coils in the lateral direction and the spacing in the vertical direction so that the two sets of coils are aligned with each other in the lateral direction. At the same time, the spacing between the two sets of coils must also be controlled within the design range. In this way, the isolation distance of the two lead frame assemblies respectively provided with two sets of coils can be adjusted, thereby adjusting the effect of galvanic islolated between the two sets of coils. In the prior art, there is still a lack of production process A manufacturing method and a lead frame assembly that can easily adjust the coupling amount between two sets of coils. Furthermore, as previously stated, there is a need to provide a magnetically coupled package structure and a method of fabricating the same to fabricate a multi-channel device in a simple manner. In other words, the prior art magnetically coupled package structure and its method of manufacture still have room for improvement.

本發明所要解決的技術問題在於,針對現有技術的不足提供一種簡單且低成本的磁耦合封裝結構及其製造方法。本發明所提供的製造方法是通過兩個獨立的引線架結構來分別形成第一組引線架以及第二組引線架,且可以通過對兩組引線架分別施加磁場來將上下設置的引線架的線圈部分相互對齊。另外,本發明還可以通過調整兩組引線架之間的間距來調整磁耦合封裝結構的耦合效果。 The technical problem to be solved by the present invention is to provide a simple and low-cost magnetic coupling package structure and a manufacturing method thereof for the deficiencies of the prior art. The manufacturing method provided by the present invention is to form a first group of lead frames and a second group of lead frames respectively by two independent lead frame structures, and the lead frames of the upper and lower rows can be arranged by applying magnetic fields to the two sets of lead frames respectively. The coil portions are aligned with each other. In addition, the present invention can also adjust the coupling effect of the magnetic coupling package structure by adjusting the spacing between the two sets of lead frames.

為了解決上述的技術問題,本發明所採用的其中一技術方案是提供一種用於磁耦合隔離器的雙引線架磁耦合封裝結構的製造方法,其包括一引線架提供步驟、一晶片連接步驟以及一線圈對位步驟。引線架提供步驟包括提供一第一組引線架以及一第二組引線架,其中,所述第一組引線架包括一第一晶片承載部、至少一第一線圈部、多個第一引腳部以及多個第一浮動引腳,且所述第二組引線架包括一第二晶片承載部、至少一第二線圈部、多個第二引腳部以及多個第二浮動引腳。晶片連接步驟包括將至少一第一晶片以及至少一第二晶片分別設置在所述第一晶片承載部與所述第二晶片承載部上且分別電性連接於所述第一引腳部與所述第二引腳部。線圈對位步驟包括將所述第一組引線架設置在所述第二組引線架的上方或下方,並分別施加一第一磁場以及一第二磁場至所述第一組引線架與所述第二組引線架,以使得所述第一線圈部與所述第二線圈部相互對位。 In order to solve the above technical problem, one of the technical solutions adopted by the present invention is to provide a method for manufacturing a dual lead frame magnetic coupling package structure for a magnetic coupling isolator, comprising a lead frame providing step, a wafer connecting step, and A coil alignment step. The lead frame providing step includes providing a first set of lead frames and a second set of lead frames, wherein the first set of lead frames includes a first wafer carrier, at least one first coil portion, and a plurality of first pins And a plurality of first floating pins, and the second group of lead frames includes a second wafer carrier, at least one second coil portion, a plurality of second pin portions, and a plurality of second floating pins. The wafer connecting step includes disposing at least one first wafer and at least one second wafer on the first wafer carrying portion and the second wafer carrying portion, respectively, and electrically connecting to the first lead portion and the respectively The second pin portion is described. The coil alignment step includes disposing the first set of lead frames above or below the second set of lead frames, and applying a first magnetic field and a second magnetic field to the first set of lead frames and the The second set of lead frames are such that the first coil portion and the second coil portion are aligned with each other.

為了解決上述的技術問題,本發明所採用的另外一技術方案 是,提供一種用於磁耦合隔離器的雙引線架磁耦合封裝結構,其包括一第一組引線架、一第二組引線架、一第一晶片、一第二晶片以及一絕緣封裝體。所述第一組引線架包括一第一晶片承載部、至少一第一線圈部、多個第一引腳部以及多個第一浮動引腳,且所述第二組引線架且包括一第二晶片承載部、至少一第二線圈部、多個第二引腳部以及多個第二浮動引腳。所述第一晶片設置在所述第一晶片承載部,且所述第二晶片設置在所述第二晶片承載部。所述絕緣封裝體封裝所述第一晶片與所述第二晶片並連接所述第一組引線架與所述第二組引線架,其中,每一個所述第一引腳部的一部分裸露在所述絕緣封裝體外,且每一個所述第二引腳部的一部分裸露在所述絕緣封裝體外,所述第一引腳部的所述部分以及所述第二引腳部的所述部分用以分別提供一隔離電壓至所述第一組引線架以及所述第二組引線架。所述第一組引線架設置於所述第二組引線架的上方或者下方,所述第一組引線架與所述第二組引線架之間具有一高度差,且所述第一組引線架與所述第二組引線架彼此電性隔離,所述第一線圈部與所述第二線圈部相互匹配而產生磁耦合。 In order to solve the above technical problem, another technical solution adopted by the present invention A dual lead frame magnetically coupled package structure for a magnetically coupled isolator is provided that includes a first set of lead frames, a second set of lead frames, a first wafer, a second wafer, and an insulative package. The first set of lead frames includes a first wafer carrying portion, at least one first coil portion, a plurality of first lead portions, and a plurality of first floating pins, and the second set of lead frames includes a first a second wafer carrying portion, at least one second coil portion, a plurality of second lead portions, and a plurality of second floating pins. The first wafer is disposed on the first wafer carrier and the second wafer is disposed on the second wafer carrier. The insulating package encapsulates the first wafer and the second wafer and connects the first set of lead frames and the second set of lead frames, wherein a portion of each of the first lead portions is exposed The insulating package is external to the body, and a portion of each of the second lead portions is exposed outside the insulating package, and the portion of the first lead portion and the portion of the second lead portion are used To provide an isolation voltage to the first set of lead frames and the second set of lead frames, respectively. The first set of lead frames are disposed above or below the second set of lead frames, and the first set of lead frames and the second set of lead frames have a height difference, and the first set of leads The frame and the second set of lead frames are electrically isolated from each other, and the first coil portion and the second coil portion are matched to each other to generate magnetic coupling.

本發明的其中一有益效果在於,本發明所提供的用於磁耦合隔離器的雙引線架磁耦合封裝結構及其製造方法,其能通過“將所述第一組引線架設置在所述第二組引線架的上方或下方,並分別施加一第一磁場以及一第二磁場至所述第一組引線架與所述第二組引線架,以使得所述第一線圈部與所述第二線圈部相互對位”或者“所述第一組引線架設置於所述第二組引線架的上方或者下方,所述第一組引線架與所述第二組引線架之間具有一高度差,且所述第一組引線架與所述第二組引線架彼此電性隔離,所述第一線圈部與所述第二線圈部相互匹配而產生磁耦合”的技術方案,以提升第一線圈部與第二線圈部彼此對齊的精準度,並控制第一線圈部與第二線圈部相互匹配後所產生的磁耦合效果。 One of the advantageous effects of the present invention is a dual lead frame magnetic coupling package structure for a magnetic coupling isolator provided by the present invention and a method of fabricating the same, which can be provided by "setting the first set of lead frames in the Upper or lower of the two sets of lead frames, and applying a first magnetic field and a second magnetic field to the first set of lead frames and the second set of lead frames, respectively, such that the first coil portion and the first The two coil portions are aligned with each other or the first group of lead frames are disposed above or below the second group of lead frames, and a height between the first group of lead frames and the second group of lead frames Poor, and the first set of lead frames and the second set of lead frames are electrically isolated from each other, and the first coil portion and the second coil portion are matched to each other to generate magnetic coupling" The accuracy with which the coil portion and the second coil portion are aligned with each other, and controls the magnetic coupling effect generated when the first coil portion and the second coil portion are matched with each other.

為使能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與附圖,然而所提供的附圖僅用於提供參考與說明,並非用來對本發明加以限制。 For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings.

P‧‧‧雙引線架磁耦合封裝結構 P‧‧‧Double lead frame magnetic coupling package structure

1‧‧‧第一組引線架 1‧‧‧First set of lead frames

10‧‧‧第一架體 10‧‧‧First body

11‧‧‧第一晶片承載部 11‧‧‧First wafer carrier

12,12’‧‧‧第一線圈部 12,12’‧‧‧First coil

13‧‧‧第一引腳部 13‧‧‧First pin section

14‧‧‧第一浮動引腳 14‧‧‧First floating pin

2‧‧‧第二組引線架 2‧‧‧Second set of lead frames

20‧‧‧第二架體 20‧‧‧Second body

21‧‧‧第二晶片承載部 21‧‧‧Second wafer carrier

22‧‧‧第二線圈部 22‧‧‧second coil

23‧‧‧第二引腳部 23‧‧‧Second pin section

24‧‧‧第二浮動引腳 24‧‧‧Second floating pin

3‧‧‧第一晶片 3‧‧‧First chip

31‧‧‧第一連接線 31‧‧‧First cable

4‧‧‧第二晶片 4‧‧‧second chip

41‧‧‧第二連接線 41‧‧‧second cable

5‧‧‧封裝體 5‧‧‧Package

B,B’‧‧‧彎折部 B, B’‧‧‧Bend

d‧‧‧高度差 D‧‧‧ height difference

圖1為本發明其中一實施例所使用的第一組引線架的俯視示意圖;圖2為圖1中沿II-II剖面線所得的剖面示意視圖;圖3為本發明其中一實施例所使用的第二組引線架的俯視示意圖;圖4為圖3中沿IV-IV剖面線所得的剖面示意視圖;圖5為本發明其中一實施例的用於磁耦合隔離器的雙引線架磁耦合封裝結構的製造方法的流程圖;圖6為圖2所示的第一組引線架在彎折引腳部後的剖面示意視圖;圖7為圖4所示的第二組引線架在彎折引腳部後的剖面示意視圖;圖8為本發明其中一實施例的用於磁耦合隔離器的雙引線架磁耦合封裝結構的製造方法在線圈對位步驟後的示意圖;圖9為本發明其中一實施例所提供的用於磁耦合隔離器的雙引線架磁耦合封裝結構的示意圖;圖10為本發明另一實施例所提供的用於磁耦合隔離器的雙引線架磁耦合封裝結構的示意圖;圖11為本發明另一實施例所使用的第一組引線架的俯視示意圖;圖12為本發明再一實施例所使用的第一組引線架的俯視示意圖;圖13為本發明再另一實施例所使用的第一組引線架在設置晶片前的俯視示意圖;以及 圖14為圖13所示的結構在設置晶片後的俯視示意圖。 1 is a schematic plan view of a first set of lead frames used in one embodiment of the present invention; FIG. 2 is a schematic cross-sectional view taken along line II-II of FIG. 1; FIG. 3 is used in one embodiment of the present invention. FIG. 4 is a schematic cross-sectional view taken along line IV-IV of FIG. 3; FIG. 5 is a double lead frame magnetic coupling for a magnetic coupling isolator according to an embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of the first set of lead frames shown in FIG. 2 after bending the lead portions; FIG. 7 is a view of the second set of lead frames shown in FIG. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 8 is a schematic view showing a manufacturing method of a double lead frame magnetic coupling package structure for a magnetic coupling isolator according to an embodiment of the present invention after a coil alignment step; FIG. A schematic diagram of a dual lead frame magnetic coupling package structure for a magnetic coupling isolator provided by an embodiment; FIG. 10 is a double lead frame magnetic coupling package structure for a magnetic coupling isolator according to another embodiment of the present invention; Schematic diagram; Figure 11 is another FIG. 12 is a top plan view of a first set of lead frames used in another embodiment of the present invention; FIG. 13 is a first view of another embodiment of the present invention; a top view of the set of lead frames before the wafer is placed; Figure 14 is a top plan view of the structure of Figure 13 after the wafer is placed.

以下是通過特定的具體實施例來說明本發明所公開有關“用於磁耦合隔離器的雙引線架磁耦合封裝結構及其製造方法”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本發明的精神下進行各種修飾與變更。另外,本發明的附圖僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。 The following is a description of an embodiment of the present invention relating to a "two-lead frame magnetic coupling package structure for a magnetic coupling isolator and a method of manufacturing the same", which can be disclosed by those skilled in the art by a specific embodiment. The advantages and effects of the present invention are understood. The present invention may be carried out or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention. In addition, the drawings of the present invention are merely illustrative and are not intended to be stated in the actual size. The following embodiments will further explain the related technical content of the present invention, but the disclosure is not intended to limit the scope of the present invention.

請參閱圖1至圖4。圖1及圖3分別為本發明實施例所使用的第一組引線架以及第二組引線架的俯視示意圖,而圖2及圖4分別為圖1及圖3所示的第一組引線架沿著剖面線所得的剖面示意視圖。本發明所提供的用於磁耦合隔離器的雙引線架磁耦合封裝結構的製造方法可以利用兩個獨立的引線架結構,即,由第一組引線架1以及第二組引線架2相互組合所形成的雙引線架組件。接下來,將以圖1以及圖2所示的兩個獨立的引線架結構作為組成元件為例,針對本發明實施例所提供的用於磁耦合隔離器的雙引線架磁耦合封裝結構的製造方法進行詳細說明。 Please refer to Figure 1 to Figure 4. 1 and 3 are top plan views of a first set of lead frames and a second set of lead frames used in an embodiment of the present invention, and FIGS. 2 and 4 are first sets of lead frames shown in FIGS. 1 and 3, respectively. A schematic view of the section taken along the section line. The manufacturing method of the double lead frame magnetic coupling package structure for magnetic coupling isolator provided by the present invention can utilize two independent lead frame structures, that is, the first group of lead frames 1 and the second group of lead frames 2 are combined with each other. The resulting double lead frame assembly. Next, taking the two independent lead frame structures shown in FIG. 1 and FIG. 2 as constituent elements as an example, the manufacturing of the double lead frame magnetic coupling package structure for the magnetic coupling isolator provided by the embodiment of the present invention is provided. The method is described in detail.

請一併參閱圖5,圖5為本發明其中一實施例的用於磁耦合隔離器的雙引線架磁耦合封裝結構的製造方法的流程圖。如圖5所示,本發明所提供的用於磁耦合隔離器的雙引線架磁耦合封裝結構的製造方法包括引線架提供步驟(步驟S100)、晶片連接步驟(步驟S102)以及線圈對位步驟(步驟S104)。具體來說,在引線架提供步驟中,是提供相互分離的第一組引線架1以及第二組引線架2。 Please refer to FIG. 5. FIG. 5 is a flow chart of a method for manufacturing a dual lead frame magnetic coupling package structure for a magnetic coupling isolator according to an embodiment of the present invention. As shown in FIG. 5, the manufacturing method of the double lead frame magnetic coupling package structure for a magnetic coupling isolator provided by the present invention includes a lead frame providing step (step S100), a wafer connecting step (step S102), and a coil alignment step. (Step S104). Specifically, in the lead frame providing step, the first group of lead frames 1 and the second group of lead frames 2 which are separated from each other are provided.

如圖1所示,第一組引線架1包括第一晶片承載部11、第一 線圈部12、多個第一引腳部13以及多個第一浮動引腳14。如圖3所示,第二組引線架2包括第二晶片承載部21、第二線圈部22、多個第二引腳部23以及多個第二浮動引腳24。由圖1與圖3的比較可知,第一組引線架1與第二組引線架2具有相似的結構,即,都包括晶片承載部、線圈部、引腳部以及浮動引腳,只是二者的結構配置互為鏡像。 As shown in FIG. 1, the first set of lead frames 1 includes a first wafer carrying portion 11, first The coil portion 12, the plurality of first lead portions 13, and the plurality of first floating pins 14. As shown in FIG. 3, the second set of lead frames 2 includes a second wafer carrying portion 21, a second coil portion 22, a plurality of second lead portions 23, and a plurality of second floating pins 24. It can be seen from comparison between FIG. 1 and FIG. 3 that the first set of lead frames 1 and the second set of lead frames 2 have a similar structure, that is, all include a wafer carrying portion, a coil portion, a lead portion, and a floating pin, but only The structural configurations are mirror images of each other.

除此之外,第一組引線架1以及第二組引線架2還可以進一步包括作為支撐架的第一架體10以及第二架體20。如圖1以及圖2所示,在本發明的其中一實施例中,第一組引線架1中的第一晶片承載部11是被第一線圈部12包圍,且第一晶片承載部11以及第一線圈部12都通過第一引腳部13與第一架體10連接。相似地,如圖3以及圖4所示,第二組引線架2中的第二晶片承載部21是被第二線圈部22包圍,且第二晶片承載部21以及第二線圈部22都通過第二引腳部23與第二架體20連接。另外,第一浮動引腳14與第二浮動引腳24是分別用以支撐第一線圈部12與第二線圈部22。 In addition, the first set of lead frames 1 and the second set of lead frames 2 may further include a first frame body 10 as a support frame and a second frame body 20. As shown in FIG. 1 and FIG. 2, in one embodiment of the present invention, the first wafer carrier 11 in the first set of lead frames 1 is surrounded by the first coil portion 12, and the first wafer carrier portion 11 and The first coil portion 12 is connected to the first frame body 10 through the first lead portion 13. Similarly, as shown in FIGS. 3 and 4, the second wafer carrier portion 21 of the second group of lead frames 2 is surrounded by the second coil portion 22, and the second wafer carrier portion 21 and the second coil portion 22 are both passed. The second lead portion 23 is connected to the second frame body 20. In addition, the first floating pin 14 and the second floating pin 24 are respectively used to support the first coil portion 12 and the second coil portion 22.

須注意的是,圖1至圖4所示的第一組引線架1以及第二組引線架2的結構設計,如,晶片承載部與線圈部的相對關係,僅是本發明的其中一種實施例。針對第一組引線架1以及第二組引線架2的不同結構設計,將於說明書中稍後敘述。 It should be noted that the structural design of the first set of lead frames 1 and the second set of lead frames 2 shown in FIGS. 1 to 4, such as the relative relationship between the wafer carrying portion and the coil portion, is only one of the implementations of the present invention. example. Different structural designs for the first set of lead frames 1 and the second set of lead frames 2 will be described later in the specification.

換句話說,只要能使得磁耦合封裝結構中的第一線圈部12以及第二線圈部22相互匹配以通過電磁耦合傳遞信號,第一晶片承載部11與第一線圈部12之間以及第二晶片設置部21與第二線圈22之間的相對位置關係在本發明中並不加以限制。 In other words, as long as the first coil portion 12 and the second coil portion 22 in the magnetic coupling package structure can be matched to each other to transmit signals by electromagnetic coupling, between the first wafer carrying portion 11 and the first coil portion 12 and second The relative positional relationship between the wafer setting portion 21 and the second coil 22 is not limited in the present invention.

然而,如圖1至圖4所示的第一組引線架1以及第二組引線架2的結構設計可以有效節省所形成的雙引線架磁耦合封裝結構的整體體積並提升耦合效果。因此,較佳地,在本發明中,第一線圈部12圍繞第一晶片承載部11,且第二線圈部22圍繞第二晶 片承載部21,這樣的設置方式可以在使用最大線圈面積之下有效節省所形成的引線架組件或是雙引線架磁耦合封裝結構的整體體積並提升電隔離以及磁耦合效果。 However, the structural design of the first set of lead frames 1 and the second set of lead frames 2 as shown in FIGS. 1 to 4 can effectively save the overall volume of the formed double lead frame magnetically coupled package structure and enhance the coupling effect. Therefore, preferably, in the present invention, the first coil portion 12 surrounds the first wafer carrying portion 11, and the second coil portion 22 surrounds the second crystal The sheet carrier portion 21 can be arranged to effectively reduce the overall volume of the formed lead frame assembly or the double lead frame magnetically coupled package structure and enhance electrical isolation and magnetic coupling effects under the use of the maximum coil area.

第一組引線架1以及第二組引線架2可以都是由導電材料,例如金屬所製成,且其等的材料可為相同或不相同。第一組引線架1的第一架體10、第一晶片承載部11、第一線圈部12以及第一引腳部13可以由同一種材料一體成形而形成。同樣地,第二組引線架2的第二架體20、第二晶片承載部21、第二線圈部22以及第二引腳部23也可以由同一種材料一體成形而形成。 The first set of lead frames 1 and the second set of lead frames 2 may all be made of a conductive material such as metal, and the materials thereof may be the same or different. The first frame body 10 of the first group of lead frames 1, the first wafer carrier portion 11, the first coil portion 12, and the first lead portion 13 may be integrally formed of the same material. Similarly, the second frame body 20, the second wafer carrier portion 21, the second coil portion 22, and the second lead portion 23 of the second group of lead frames 2 may be integrally formed of the same material.

第一線圈部12以及第二線圈部22可以由第一組引線架1以及第二組引線架2的條型金屬所構成的金屬框或是金屬環所形成。第一線圈部12以及第二線圈部22可以是單圈線圈或是多圈線圈。另外,在本發明中,第一線圈部12以及第二線圈部22的數量不在此限制。舉例而言,在第一組引線架1中可以包括對稱地分佈在其中的兩個第一線圈部12,且在第二組引線架2中可以包括對稱地分佈在其中的兩個第二線圈部22。具體來說,兩個第一線圈部12可以分佈在第一晶片承載部11的兩相反側,而兩個第二線圈部22可以分佈在第二晶片承載部21的兩相反側,從而形成兩個電信通道。然而,在以下說明中,第一組引線架1以及第二組引線架2分別包含一個第一線圈部12以及一個第二線圈部22。 The first coil portion 12 and the second coil portion 22 may be formed of a metal frame or a metal ring formed of a strip metal of the first group of lead frames 1 and the second group of lead frames 2. The first coil portion 12 and the second coil portion 22 may be a single coil or a multi-turn coil. Further, in the present invention, the number of the first coil portion 12 and the second coil portion 22 is not limited thereto. For example, two first coil portions 12 symmetrically distributed therein may be included in the first set of lead frames 1, and two second coils symmetrically distributed therein may be included in the second group of lead frames 2 Part 22. Specifically, the two first coil portions 12 may be distributed on opposite sides of the first wafer carrying portion 11, and the two second coil portions 22 may be distributed on opposite sides of the second wafer carrying portion 21, thereby forming two Telecommunications channels. However, in the following description, the first group of lead frames 1 and the second group of lead frames 2 respectively include a first coil portion 12 and a second coil portion 22.

接下來,請再次參閱圖5。步驟S102為一晶片連接步驟,其包括將至少一第一晶片以及至少一第二晶片分別設置在第一晶片承載部11與第二晶片承載部21上且分別電性連接於第一引腳部13與第二引腳部23。 Next, please refer to Figure 5 again. Step S102 is a wafer connection step, which includes disposing at least one first wafer and at least one second wafer on the first wafer carrier 11 and the second wafer carrier 21, respectively, and electrically connected to the first lead portion, respectively. 13 and the second lead portion 23.

如圖1以及圖3所示,除了兩個引線架結構(第一組引線架1以及第二組引線架2)之外,圖1以及圖3同時繪示設置在第一晶片承載部11上的第一晶片3以及設置在第二晶片承載部21上的 第二晶片4,以及用以分別對第一晶片3以及第二晶片4提供電性連接的多條第一連接線31以及多條第二連接線41。圖2及圖4同樣繪示第一晶片3以及第二晶片4,但為了維持圖式的簡潔,僅繪示出其中一條第一連接線31以及其中一條第二連接線41。 As shown in FIG. 1 and FIG. 3, in addition to the two lead frame structures (the first group of lead frames 1 and the second group of lead frames 2), FIGS. 1 and 3 are simultaneously disposed on the first wafer carrying portion 11. a first wafer 3 and a second wafer carrier 21 The second wafer 4 and the plurality of first connecting lines 31 and the plurality of second connecting lines 41 for respectively electrically connecting the first wafer 3 and the second wafer 4 are provided. 2 and 4 also show the first wafer 3 and the second wafer 4, but in order to maintain the simplicity of the drawing, only one of the first connecting lines 31 and one of the second connecting lines 41 are shown.

如圖1以及圖3所示,通過第一連接線31,第一晶片承載部11與第一線圈部12彼此電性連接,且通過第二連接線41,第二晶片承載部21與第二線圈部22彼此電性連接。另外,第一晶片承載部11與第二晶片承載部21也可以分別通過另外的第一連接線31以及第二連接線41分別與第一引腳部13以及第二引腳部23電性連接。其他未標號的第一連接線以及第二連接線所建立的連接可以依據本領域通常知識而加以設計,在此不進行詳細說明。 As shown in FIG. 1 and FIG. 3, the first wafer carrying portion 11 and the first coil portion 12 are electrically connected to each other through the first connecting line 31, and the second wafer carrying portion 21 and the second through the second connecting line 41. The coil portions 22 are electrically connected to each other. In addition, the first wafer carrying portion 11 and the second wafer carrying portion 21 may be electrically connected to the first lead portion 13 and the second lead portion 23 through the other first connecting line 31 and the second connecting line 41, respectively. . Other unnumbered first and second connection lines may be designed in accordance with the general knowledge in the art and will not be described in detail herein.

在本發明中,多個第一引腳部13以及多個第二引腳部23的數量以及形狀可以依據產品需求加以設計以及調整,在本發明中並不加以限制。另外,有關多條第一連接線31以及多條第二連接線41的連接方式以及具體型態,在本發明中同樣不加以限制,且可以由該項發明技術領域中具有通常知識者依據其專業知識加以理解及設計。 In the present invention, the number and shape of the plurality of first lead portions 13 and the plurality of second lead portions 23 can be designed and adjusted according to product requirements, and are not limited in the present invention. In addition, the connection manner and specific types of the plurality of first connecting lines 31 and the plurality of second connecting lines 41 are also not limited in the present invention, and may be based on the general knowledge in the technical field of the invention. Expertise is understood and designed.

舉例而言,第一晶片3與第二晶片4都是積體電路晶片(IC)。在本發明的其中一實施例中,第一晶片3包括線圈驅動電路單元,第二晶片4包括接收電路單元。高頻訊號通過線圈驅動電路單元與第一線圈部12的電性連接以傳輸至第一線圈部12,且第二線圈部22通過接收電路單元與第二線圈部22的電性連接以接收高頻電壓。或是,在另一個實施例中,第一晶片3可以包括接收電路單元,而第二晶片4包括線圈驅動電路單元。 For example, the first wafer 3 and the second wafer 4 are integrated circuit wafers (ICs). In one embodiment of the invention, the first wafer 3 comprises a coil drive circuit unit and the second wafer 4 comprises a receive circuit unit. The high frequency signal is electrically connected to the first coil portion 12 through the coil driving circuit unit to be transmitted to the first coil portion 12, and the second coil portion 22 is electrically connected to the second coil portion 22 through the receiving circuit unit to receive high. Frequency voltage. Alternatively, in another embodiment, the first wafer 3 may include a receiving circuit unit, and the second wafer 4 includes a coil driving circuit unit.

步驟S102中第一晶片3以及第二晶片4的設置方式在本發明中並不加以限制。另外,在步驟S102中,可以在設置第一晶片3以及第二晶片4的同時設置第一連接線31以及第二連接線41。舉例而言,第一連接線31可以以打線方式連接於第一晶片3、第一 晶片承載部11以及第一引腳部13之間,而第二連接線41可以以打線方式連接於第二晶片4、第二晶片承載部21、第二線圈部22、以及第二引腳部23之間。 The arrangement of the first wafer 3 and the second wafer 4 in step S102 is not limited in the present invention. Further, in step S102, the first connection line 31 and the second connection line 41 may be provided while the first wafer 3 and the second wafer 4 are disposed. For example, the first connection line 31 can be connected to the first wafer 3 in a wire bonding manner, first Between the wafer carrying portion 11 and the first lead portion 13, and the second connecting line 41 may be wire-bonded to the second wafer 4, the second wafer carrying portion 21, the second coil portion 22, and the second lead portion Between 23 .

藉此,由線圈驅動電路單元所輸入的輸入訊號可以通過第一線圈部12與第二線圈部22在橫向方向上相互對準所產生的有效磁耦合而傳輸到輸出端(接收電路單元)。具體來說,第一組引線架1的第一線圈部12通過第一連接線31與第一晶片3一起形成一個第一封閉電路。對第一封閉電路通入電流可以產生高頻交流磁場。高頻交流磁場通過第一線圈部12與第二線圈部22的磁耦合,而在第二組引線架2的第二線圈部22、第二連接線41以及第二晶片4形成的第二封閉電路中產生高頻交流電流。據此,可以將電訊號從第一晶片21(例如發射器)傳輸到與第一晶片3電隔離的第二晶片4(例如接收器)。 Thereby, the input signal input by the coil driving circuit unit can be transmitted to the output terminal (receiving circuit unit) by the effective magnetic coupling generated by the first coil portion 12 and the second coil portion 22 being aligned with each other in the lateral direction. Specifically, the first coil portion 12 of the first group of lead frames 1 forms a first closed circuit together with the first wafer 3 through the first connection line 31. A high frequency alternating magnetic field can be generated by applying current to the first closed circuit. The high frequency alternating magnetic field is magnetically coupled to the second coil portion 22 by the first coil portion 12, and the second coil portion 22, the second connecting line 41, and the second wafer 4 of the second group of lead frames 2 are formed in a second closed state. High frequency alternating current is generated in the circuit. Accordingly, the electrical signal can be transmitted from the first wafer 21 (e.g., the transmitter) to the second wafer 4 (e.g., the receiver) that is electrically isolated from the first wafer 3.

在步驟S102完成之後,本發明所提供的用於耦合隔離器的雙引線架磁耦合封裝結構的製造方法還可以進一步包括在第一組引線架1以及第二組引線架2中各自形成彎折部的步驟。請參閱圖2、圖4、圖6以及圖7。圖6為圖2所示的第一組引線架1在彎折引腳部後的剖面示意視圖,而圖7為圖4所示的第二組引線架2在彎折引腳部後的剖面示意視圖。 After the step S102 is completed, the manufacturing method of the double lead frame magnetic coupling package structure for coupling the isolator provided by the present invention may further comprise forming a bend in each of the first set of lead frames 1 and the second set of lead frames 2 Steps of the department. Please refer to FIG. 2, FIG. 4, FIG. 6, and FIG. 6 is a cross-sectional schematic view of the first set of lead frames 1 shown in FIG. 2 after bending the lead portions, and FIG. 7 is a cross-sectional view of the second set of lead frames 2 shown in FIG. Schematic view.

值得一提的是,本發明所提供的用於耦合隔離器的雙引線架磁耦合封裝結構的製造方法中,步驟S102以及形成彎折部的步驟不是必須依照上述順序進行。換句話說,在如圖5所示的步驟S104,即線圈對位步驟之前,可以是先完成第一晶片3以及第二晶片4的設置再形成彎折部,或是先形成彎折部,再將第一晶片3以及第二晶片4分別設置在第一晶片承載部11以及第二晶片承載部21上。在以下說明中,是以先進行步驟S102再形成彎折部的情況進行說明。 It is worth mentioning that in the manufacturing method of the double lead frame magnetic coupling package structure for coupling the isolator provided by the present invention, the step S102 and the step of forming the bent portion are not necessarily performed in accordance with the above sequence. In other words, before step S104 shown in FIG. 5, that is, before the coil alignment step, the first wafer 3 and the second wafer 4 may be first formed to form a bent portion, or a bent portion may be formed first. The first wafer 3 and the second wafer 4 are disposed on the first wafer carrier 11 and the second wafer carrier 21, respectively. In the following description, the case where the bent portion is formed in step S102 will be described.

事實上,在本發明中,彎折部B,B’可以形成於第一組引線架 1中或是形成於第二組引線架2中,或是在第一組引線架1以及第二組引線架2都各自形成彎折部B,B’。換句話說,本發明所提供的製造方法可以包括形成至少一彎折部在第一組引線架1與第二組引線架2兩者之中的至少一個上。 In fact, in the present invention, the bent portions B, B' may be formed in the first set of lead frames 1 is either formed in the second set of lead frames 2, or both the first set of lead frames 1 and the second set of lead frames 2 are formed with bent portions B, B'. In other words, the manufacturing method provided by the present invention may include forming at least one bent portion on at least one of the first set of lead frames 1 and the second set of lead frames 2.

在圖6以及圖7所示的實施例中,第一組引線架1中形成有彎折部B,而第二組引線架2中形成有彎折部B’。彎折部B可以形成於第一引腳部13與第一線圈部12之間以及第一引腳部13與第一晶片承載部11之間。彎折部B’可以形成於第二引腳部23與第二線圈部22之間,以及第二引腳部23與第二晶片承載部12之間。 In the embodiment shown in Figs. 6 and 7, the first group of lead frames 1 is formed with a bent portion B, and the second group of lead frames 2 is formed with a bent portion B'. The bent portion B may be formed between the first lead portion 13 and the first coil portion 12 and between the first lead portion 13 and the first wafer carrying portion 11. The bent portion B' may be formed between the second lead portion 23 and the second coil portion 22, and between the second lead portion 23 and the second wafer carrying portion 12.

具體來說,形成彎折部B,B’可以避免在後續步驟中,第一線圈部12與第二線圈部22彼此接觸,也可以避免設置在第一晶片承載部11上的第一晶片3與設置在第二晶片承載部21上的第二晶片4彼此接觸。因此,只要可以達到上述避免第一組引線架1與第二組引線架2在產品中不相互接觸的目的,即,確保第一組引線架1與第二組引線架2彼此電性絕緣,彎折部B,B’的具體尺寸、彎折數量以及彎折的方向也可以被調整。具體來說,彎折部B,B’的詳細參數可以依據製造方法的流程,以及目標產品的磁耦合及電壓絕緣特性而加以設計。舉例而言,可以依據第一晶片3以及第二晶片4的設置位置(例如是設置在彼此相對的表面上,還是彼此背對的表面上等)來決定彎折部1131的彎折方向。 Specifically, the formation of the bent portions B, B' can prevent the first coil portion 12 and the second coil portion 22 from contacting each other in a subsequent step, and the first wafer 3 disposed on the first wafer carrying portion 11 can also be avoided. The second wafers 4 disposed on the second wafer carrier 21 are in contact with each other. Therefore, as long as the above-mentioned avoidance of the first group of lead frames 1 and the second group of lead frames 2 not in contact with each other in the product can be achieved, that is, to ensure that the first group of lead frames 1 and the second group of lead frames 2 are electrically insulated from each other, The specific size of the bent portions B, B', the number of bends, and the direction of the bend can also be adjusted. Specifically, the detailed parameters of the bent portions B, B' can be designed in accordance with the flow of the manufacturing method and the magnetic coupling and voltage insulating properties of the target product. For example, the bending direction of the bent portion 1131 can be determined depending on the arrangement positions of the first wafer 3 and the second wafer 4 (for example, on surfaces facing each other or on surfaces facing each other, etc.).

通過彎折部B,B’的設置,可以使得後續將線圈對位的步驟更容易進行。另外,藉由控制彎折部B,B’的彎折方向以及彎折量(形成之彎折的幅度或高度),可以使得在後續進行線圈對位步驟之後而形成的磁耦合封裝結構的第一線圈部11與第二線圈部21之間具有一高度差d(標示於圖9中)。高度差d可以依據目標產品的磁耦合及電壓絕緣特性加以設計。換句話說,調整高度差d的大小可以調整兩組引線架之間的隔離電壓,以及兩個線圈部之間的磁 耦合強度。 By the arrangement of the bent portions B, B', the subsequent step of aligning the coils can be made easier. In addition, by controlling the bending direction of the bending portions B, B' and the amount of bending (the amplitude or height of the bending formed), the magnetic coupling package structure formed after the subsequent coil alignment step can be made. A coil portion 11 and the second coil portion 21 have a height difference d (indicated in Fig. 9). The height difference d can be designed according to the magnetic coupling and voltage insulation characteristics of the target product. In other words, adjusting the height difference d can adjust the isolation voltage between the two lead frames and the magnetic between the two coil portions. Coupling strength.

舉例而言,在本發明中,高度差d較佳為介於100至500微米之間。換句話說,在目標產品(磁耦合封裝結構)中,第一線圈部12與第二線圈部22之間的距離較佳為介於100至500微米之間。將高度差d控制於介於100至500微米之間可以在確保第一線圈部12與第二線圈部22之間的隔離電壓和磁耦合效率之外,有效減少目標產品的體積。 For example, in the present invention, the height difference d is preferably between 100 and 500 microns. In other words, in the target product (magnetic coupling package structure), the distance between the first coil portion 12 and the second coil portion 22 is preferably between 100 and 500 μm. Controlling the height difference d between 100 and 500 μm can effectively reduce the volume of the target product in addition to the isolation voltage and magnetic coupling efficiency between the first coil portion 12 and the second coil portion 22.

接下來,請再次參閱圖5。於步驟S104(線圈對位步驟)中,是包括將第一組引線架1設置在第二組引線架2的上方或下方,並分別施加第一磁場以及第二磁場至第一組引線架1與第二組引線架2,以使得第一線圈部12與第二線圈部22相互對位。 Next, please refer to Figure 5 again. In step S104 (coil alignment step), the first group of lead frames 1 are disposed above or below the second group of lead frames 2, and the first magnetic field and the second magnetic field are respectively applied to the first group of lead frames 1 And the second set of lead frames 2 such that the first coil portion 12 and the second coil portion 22 are aligned with each other.

具體來說,步驟S104是要使第一組引線架1的第一線圈部12與第二組引線架2的第二線圈部22彼此上下對齊。如此一來,當第一線圈部12受到第一晶片3的驅動,或是第二線圈部22受到第二晶片4的驅動時,第一線圈部12與第二線圈部22可以相互匹配而產生磁耦合。 Specifically, step S104 is to vertically align the first coil portion 12 of the first group of lead frames 1 and the second coil portion 22 of the second group of lead frames 2 to each other. In this way, when the first coil portion 12 is driven by the first wafer 3 or the second coil portion 22 is driven by the second wafer 4, the first coil portion 12 and the second coil portion 22 can be matched with each other to generate Magnetic coupling.

請配合圖8所示,圖8為本發明其中一實施例的用於耦合隔離器的雙引線架磁耦合封裝結構的製造方法在線圈對位步驟後的示意圖。在步驟S104中,首先將第一組引線架1設置在第二組引線架2的上方或下方。圖8所示的實施例是將第一組引線架1設置在第二組引線架的上方。此時,第一組引線架1的第一線圈部12與第二組引線架2的第二線圈部22是約略地上下相互對應。 Please refer to FIG. 8. FIG. 8 is a schematic diagram of a method for manufacturing a dual lead frame magnetic coupling package structure for a coupling isolator after a coil alignment step according to an embodiment of the present invention. In step S104, the first set of lead frames 1 are first placed above or below the second set of lead frames 2. The embodiment shown in Figure 8 is to position the first set of lead frames 1 above the second set of lead frames. At this time, the first coil portion 12 of the first group of lead frames 1 and the second coil portion 22 of the second group of lead frames 2 are approximately vertically aligned with each other.

接下來,分別施加方向相反的兩個磁場至第一組引線架1的第一線圈部12以及第二組引線架2的第二線圈部22。如此一來,第一線圈部12與第二線圈部22受到磁力作用而彼此對齊,使得第一組引線架1的第一線圈部12與第二組引線架2的第二線圈部22上下相互對應。換句話說,完成步驟S104後,如圖8所示,第一線圈部12會設置在第二線圈部22的正上方且與第二線圈部22 相互平行。另外,第一線圈部12與第二線圈部22會彼此對齊(aligned),進而確保第一線圈部12與第二線圈部22之間的耦合效果。除此之外,第一線圈部12與第二線圈部22之間具有一個不導電的間隔(間隔距離為高度差d)。 Next, two magnetic fields in opposite directions are applied to the first coil portion 12 of the first group of lead frames 1 and the second coil portion 22 of the second group of lead frames 2, respectively. In this way, the first coil portion 12 and the second coil portion 22 are magnetically aligned with each other such that the first coil portion 12 of the first group of lead frames 1 and the second coil portion 22 of the second group of lead frames 2 are mutually up and down correspond. In other words, after step S104 is completed, as shown in FIG. 8, the first coil portion 12 is disposed directly above the second coil portion 22 and with the second coil portion 22 Parallel to each other. In addition, the first coil portion 12 and the second coil portion 22 are aligned with each other, thereby ensuring the coupling effect between the first coil portion 12 and the second coil portion 22. In addition to this, there is a non-conductive gap between the first coil portion 12 and the second coil portion 22 (the separation distance is the height difference d).

因此,通過上述方式,本發明所提供的磁耦合封裝結構的製造方法可以以相對簡便的技術手段達到使第一線圈部12與第二線圈部22相互對齊的效果。 Therefore, in the above manner, the manufacturing method of the magnetic coupling package structure provided by the present invention can achieve the effect of aligning the first coil portion 12 and the second coil portion 22 with each other with a relatively simple technical means.

本發明所提供的用於耦合隔離器的雙引線架磁耦合封裝結構的製造方法可以進一部包含封裝步驟。請參閱圖9,圖9為本發明其中一實施例所提供的磁耦合封裝結構的示意圖。 The manufacturing method of the dual lead frame magnetic coupling package structure for coupling the isolator provided by the present invention may further include a packaging step. Please refer to FIG. 9. FIG. 9 is a schematic diagram of a magnetic coupling package structure according to an embodiment of the present invention.

封裝步驟包括形成絕緣封裝體5,以封裝第一晶片3與第二晶片4並連接第一組引線架1與第二組引線架2。經過封裝後,每一個第一引腳部13的一部分裸露在絕緣封裝體5外,且每一個第二引腳部23的一部分裸露在絕緣封裝體5外。 The packaging step includes forming an insulating package 5 to package the first wafer 3 and the second wafer 4 and connect the first set of lead frames 1 and the second set of lead frames 2. After being packaged, a portion of each of the first lead portions 13 is exposed outside the insulating package 5, and a portion of each of the second lead portions 23 is exposed outside the insulating package 5.

具體而言,在使第一線圈部12與第二線圈部22相互對齊後,可以形成絕緣封裝體5,封裝體5包覆第一組引線架1的第一晶片承載部11、第一線圈部12、第二組引線架2的第二晶片承載部21、第二線圈部22以及分別設置在第一晶片承載部11以及第二晶片承載部21上的第一晶片3以及第二晶片4。封裝體5的一部分填充於第一組引線架1與第二組引線架2之間,以將第一線圈部12與第二線圈部22彼此絕緣。 Specifically, after the first coil portion 12 and the second coil portion 22 are aligned with each other, the insulating package 5 can be formed, and the package 5 covers the first wafer carrier portion 11 and the first coil of the first group of lead frames 1. a second wafer carrying portion 21, a second coil portion 22 of the second set of lead frames 2, and a first wafer 3 and a second wafer 4 respectively disposed on the first wafer carrying portion 11 and the second wafer carrying portion 21. . A portion of the package 5 is filled between the first set of lead frames 1 and the second set of lead frames 2 to insulate the first coil portion 12 and the second coil portion 22 from each other.

另外,每一個第一引腳部13的一部分裸露在絕緣封裝體5外,且每一個第二引腳部23的一部分裸露在絕緣封裝體5外。由封裝體5裸露的第一引腳部13的一部分以及第二引腳部23的一部分可以與其他電子元件進行電性連接。舉例而言,第一引腳部13的一部分以及第二引腳部23的一部分可以提供磁耦合封裝結構所需的隔離電壓。 In addition, a portion of each of the first lead portions 13 is exposed outside the insulating package 5, and a portion of each of the second lead portions 23 is exposed outside the insulating package 5. A portion of the first lead portion 13 exposed by the package 5 and a portion of the second lead portion 23 may be electrically connected to other electronic components. For example, a portion of the first lead portion 13 and a portion of the second lead portion 23 may provide an isolation voltage required for the magnetically coupled package structure.

最後,本發明實施例所提供的用於耦合隔離器的雙引線架磁 耦合封裝結構的製造方法還可以進一步包括移除架體的步驟。具體來說,第一架體10以及第二架體20在製作過程中可以分別用於支撐第一組引線架1以及第二組引線架2。在通過封裝體5連接第一組引線架1與第二組引線架2後,第一架體10以及第二架體20可以被裁切(trim and form)及移除。將第一架體10以及第二架體20移除的方式在本發明中不加以限制。 Finally, the double lead frame magnetic body for coupling the isolator provided by the embodiment of the present invention The method of manufacturing the coupled package structure may further include the step of removing the frame. Specifically, the first frame body 10 and the second frame body 20 can be used to support the first group of lead frames 1 and the second group of lead frames 2, respectively, during the manufacturing process. After the first set of lead frames 1 and the second set of lead frames 2 are connected through the package 5, the first frame body 10 and the second frame body 20 can be trimmed and removed. The manner in which the first frame body 10 and the second frame body 20 are removed is not limited in the present invention.

值得注意的是,在本發明中,在形成封裝體5之前,還可以包括在第一組引線架1與第二組引線架2之間設置聚醯亞胺材料,例如聚醯亞胺薄膜,以提高隔離電壓。換句話說,聚醯亞胺薄膜可以增強第一組引線架1與第二組引線架2之間的電隔離效果。另外,通過設置聚醯亞胺薄膜,第一線圈部12與第二線圈部22之間的高度差(即間隔的距離)可以被有效減少至介於100至200微米之間。如此一來,可以在確保隔離電壓之下同時增加磁耦合效率。 It should be noted that, in the present invention, before forming the package 5, a poly-imine material, such as a polyimide film, may be disposed between the first set of lead frames 1 and the second set of lead frames 2, To increase the isolation voltage. In other words, the polyimide film enhances the electrical isolation between the first set of lead frames 1 and the second set of lead frames 2. Further, by providing the polyimide film, the difference in height (i.e., the distance of the interval) between the first coil portion 12 and the second coil portion 22 can be effectively reduced to between 100 and 200 μm. In this way, the magnetic coupling efficiency can be increased while ensuring the isolation voltage.

接下來,請參閱圖10。圖10為本發明另一實施例所提供的用於耦合隔離器的雙引線架磁耦合封裝結構的示意圖。相較於圖9所示的實施例,圖10所示的實施例中,第一晶片3以及第二晶片4的設置方式有所不同。具體而言,在圖10中,第一晶片3與第二晶片4是分別設置在彼此背對的兩個晶片承載部上。換句話說,相較於圖9的雙引線架磁耦合封裝結構P中設置有第一晶片3與第二晶片4的兩個表面是朝向相同的方向,圖10中的第一晶片3與第二晶片4是設置在彼此背對的兩個晶片承載部上。事實上,針對第一晶片3與第二晶片4的設置方式,在本發明中並不加以限制。 Next, please refer to Figure 10. FIG. 10 is a schematic diagram of a dual lead frame magnetic coupling package structure for a coupling isolator according to another embodiment of the present invention. Compared with the embodiment shown in FIG. 9, in the embodiment shown in FIG. 10, the arrangement of the first wafer 3 and the second wafer 4 is different. Specifically, in FIG. 10, the first wafer 3 and the second wafer 4 are respectively disposed on the two wafer carriers facing away from each other. In other words, the two wafers provided with the first wafer 3 and the second wafer 4 in the double-lead magnetic coupling package structure P of FIG. 9 are oriented in the same direction, the first wafer 3 and the first in FIG. The two wafers 4 are disposed on two wafer carriers facing away from each other. In fact, the manner in which the first wafer 3 and the second wafer 4 are disposed is not limited in the present invention.

事實上,如前針對第一組引線架1以及第二組引線架2的結構設計所述,第一組引線架1以及第二組引線架2中的各個部份(各個元件)可以以不同方式配置。請參閱圖11以及圖12。圖11以及圖12分別為本發明不同實施例所使用的第一組引線架1的俯 視示意圖。由於在同一個實施方式中,第一組引線架1以及第二組引線架2可以具有類似的結構,在圖11以及圖12中,只顯示第一組引線架1的結構。 In fact, as previously described for the structural design of the first set of lead frames 1 and the second set of lead frames 2, the respective portions (each element) of the first set of lead frames 1 and the second set of lead frames 2 may be different Mode configuration. Please refer to FIG. 11 and FIG. 11 and FIG. 12 are respectively a view of the first set of lead frames 1 used in different embodiments of the present invention. See the schematic. Since the first group of lead frames 1 and the second group of lead frames 2 can have a similar structure in the same embodiment, only the structure of the first group of lead frames 1 is shown in FIGS. 11 and 12.

如圖11所示,第一組引線架1中的第一晶片承載部11與第一線圈部12是彼此分離並相鄰設置。除此之外,在本發明中,第一線圈部12以及第二線圈部22的數量不限於此。在圖12所示的實施例中,第一組引線架1是包括兩個第一線圈部12,12’,且兩個第一線圈部12,12’與第一晶片承載部11彼此分離並相鄰設置。具體來說,如圖12所示,兩個第一線圈部12,12’分別設置在第一晶片承載部11的兩側並由第一浮動引腳14所支撐,使得第一線圈部12,12’都可以通過不同的第一連接線31而受到第一晶片承載部11上的第一晶片3的驅動。 As shown in FIG. 11, the first wafer carrying portion 11 and the first coil portion 12 in the first group of lead frames 1 are separated from each other and disposed adjacent to each other. In addition, in the present invention, the number of the first coil portion 12 and the second coil portion 22 is not limited thereto. In the embodiment shown in FIG. 12, the first set of lead frames 1 includes two first coil portions 12, 12', and the two first coil portions 12, 12' are separated from the first wafer carrying portion 11 and Adjacent settings. Specifically, as shown in FIG. 12, the two first coil portions 12, 12' are respectively disposed on both sides of the first wafer carrying portion 11 and supported by the first floating pins 14, so that the first coil portion 12, Both of 12' can be driven by the first wafer 3 on the first wafer carrier 11 by means of different first connecting lines 31.

如此一來,與第一組引線架1相互配合的第二組引線架2也會具有兩個第二線圈部,此兩個第二線圈部在雙引線架磁耦合封裝結構P中與第一線圈部12,12’相互對齊,並配合第一晶片3與第二晶片4的設計,可以使得雙引線架磁耦合封裝結構P為一雙通道器件。 In this way, the second set of lead frames 2 that cooperate with the first set of lead frames 1 also have two second coil portions, which are in the double lead frame magnetically coupled package structure P and the first The coil portions 12, 12' are aligned with each other and matched with the design of the first wafer 3 and the second wafer 4, so that the double lead frame magnetic coupling package structure P can be a two-channel device.

接下來,請參閱圖13以及圖14。圖13及圖14分別為本發明其中一實施例所使用的第一組引線架在設置晶片前後的俯視示意圖。當第一組引線架1包括兩個以上的第一線圈部12時,除了圖12所示的結構設計,也可以依據「第一線圈部12圍繞第一晶片設置部11」的方式來設計第一組引線架1的結構配置。 Next, please refer to FIG. 13 and FIG. 14. 13 and FIG. 14 are respectively top plan views of the first set of lead frames used in the front and rear of the wafer according to an embodiment of the present invention. When the first group of lead frames 1 includes two or more first coil portions 12, in addition to the structural design shown in FIG. 12, the first coil portion 12 may be designed to surround the first wafer mounting portion 11 A structural configuration of a set of lead frames 1.

如圖13所示,第一組引線架1包括兩個第一線圈部12,12’,且兩個第一線圈部12,12’都是圍繞第一晶片承載部11而設置。具體來說,第一線圈部12圍繞於第一晶片承載部11的外圍,而第一線圈部12’再圍繞於第一線圈部12的外圍。如此一來,可以在節省雙引線架磁耦合封裝結構P的整體體積的前提下,達到形成雙通道器件的效果。 As shown in Fig. 13, the first group of lead frames 1 includes two first coil portions 12, 12', and both of the first coil portions 12, 12' are disposed around the first wafer carrying portion 11. Specifically, the first coil portion 12 surrounds the periphery of the first wafer carrying portion 11, and the first coil portion 12' recirculates around the periphery of the first coil portion 12. In this way, the effect of forming a two-channel device can be achieved under the premise of saving the overall volume of the double-lead frame magnetic coupling package structure P.

如圖14所示,在對圖13所示的第一組引線架1進行晶片連接的步驟時,可以將第一晶片3設置在第一晶片承載部11上,使得第一晶片3覆蓋一部分的第一線圈部12。換句話說,在此實施例中,第一線圈部12以及第二線圈部22還可以利用由晶片承載部的至少一部分所支撐,藉此降低產品的整體尺寸。據此,可以不受限於第一晶片3的尺寸大小來設計第一線圈部12,12’的排列方式,進而達到降低雙引線架磁耦合封裝結構P的整體體積,以及確保雙通道器件(雙引線架磁耦合封裝結構P)的磁耦合效果。 As shown in FIG. 14, in the step of performing wafer bonding on the first group of lead frames 1 shown in FIG. 13, the first wafer 3 may be disposed on the first wafer carrier portion 11 such that the first wafer 3 covers a portion of the The first coil portion 12. In other words, in this embodiment, the first coil portion 12 and the second coil portion 22 can also be supported by at least a portion of the wafer carrying portion, thereby reducing the overall size of the product. Accordingly, the arrangement of the first coil portions 12, 12' can be designed without being limited to the size of the first wafer 3, thereby reducing the overall volume of the double lead frame magnetically coupled package structure P, and ensuring a two-channel device ( The magnetic coupling effect of the double lead frame magnetically coupled package structure P).

本發明另外提供一種磁耦合封裝結構。上述如圖9及圖10分別例示了雙引線架磁耦合封裝結構P的詳細結構。本發明所提供的雙引線架磁耦合封裝結構P可以通過上述磁耦合封裝結構的製造方法來形成。因此,有關雙引線架磁耦合封裝結構P的結構以及製造方法在此不再次敘述。 The present invention further provides a magnetically coupled package structure. The detailed structure of the double lead frame magnetic coupling package structure P is illustrated in FIGS. 9 and 10, respectively. The double lead frame magnetic coupling package structure P provided by the present invention can be formed by the above-described manufacturing method of the magnetic coupling package structure. Therefore, the structure and manufacturing method of the double lead frame magnetic coupling package structure P will not be described again.

[實施例的有益效果] [Advantageous Effects of Embodiments]

本發明的有益效果在於,本發明所提供的用於耦合隔離器的雙引線架磁耦合封裝結構P及其製造方法,其能通過“將第一組引線架1設置在第二組引線架2的上方或下方,並分別施加第一磁場以及第二磁場至第一組引線架1與第二組引線架2,以使得第一線圈部12與第二線圈部22相互對位”或者“第一組引線架1設置於第二組引線架2的上方或者下方,第一組引線架1與第二組引線架2之間具有高度差d,且第一組引線架1與第二組引線架2彼此電性隔離,第一線圈部12與第二線圈部22相互匹配而產生磁耦合”的技術方案,以提升第一線圈部12與第二線圈22部彼此對齊的精準度,並控制第一線圈部12與第二線圈部22相互匹配後所產生的磁耦合效果。 The beneficial effects of the present invention are the dual lead frame magnetic coupling package structure P for coupling the isolator provided by the present invention and the manufacturing method thereof, which can be provided by "setting the first group of lead frames 1 in the second group of lead frames 2" Above or below, and applying a first magnetic field and a second magnetic field to the first set of lead frames 1 and the second set of lead frames 2, respectively, such that the first coil portion 12 and the second coil portion 22 are aligned with each other "or" A set of lead frames 1 are disposed above or below the second set of lead frames 2, and a height difference d between the first set of lead frames 1 and the second set of lead frames 2, and the first set of lead frames 1 and the second set of leads The frame 2 is electrically isolated from each other, and the first coil portion 12 and the second coil portion 22 are matched to each other to generate a magnetic coupling" to improve the accuracy of aligning the first coil portion 12 and the second coil portion 22 with each other, and to control The magnetic coupling effect produced by the first coil portion 12 and the second coil portion 22 are matched with each other.

具體來說,本發明所提供的用於耦合隔離器的雙引線架磁耦合封裝結構P可以適用於半導體封裝元件,例如,微型變壓器中, 且可以通過簡單的製造方法配合尺寸設計達到使分別位於兩個獨立地引線架結構(第一組引線架1以及第二組引線架2)中的線圈部自動化對齊的效果。除此之外,通過封裝體5的設置,第一線圈部12以及第二線圈部22彼此相互高度絕緣。本發明所提供的雙引線架磁耦合封裝結構P可以具有5kV以上的絕緣電壓。 In particular, the dual lead frame magnetic coupling package structure P for coupling the isolator provided by the present invention can be applied to a semiconductor package component, for example, a micro transformer. Moreover, the effect of automatically aligning the coil portions respectively located in the two independent lead frame structures (the first group of lead frames 1 and the second group of lead frames 2) can be achieved by a simple manufacturing method in combination with the dimensional design. In addition to this, the first coil portion 12 and the second coil portion 22 are highly insulated from each other by the arrangement of the package 5. The double lead frame magnetic coupling package structure P provided by the present invention may have an insulation voltage of 5 kV or more.

除此之外,在本發明中,第一線圈部12以及第二線圈部22相互橫向對準而產生有效的磁耦合,使得訊號可以由輸入端(例如反射器)通過線圈耦合而傳輸到輸出端(例如接收器)並輸出。除此之外,第一線圈部12以及第二線圈部22的垂直距離可以通過對引線架結構1的設計而控制。舉例而言,調整第一線圈部12所在的第一組引線架11與第二線圈部22所在的第二組引線架12的隔離距離,可以調整兩個線圈彼此電性絕緣的效果。 In addition, in the present invention, the first coil portion 12 and the second coil portion 22 are laterally aligned with each other to generate an effective magnetic coupling, so that the signal can be transmitted to the output through the coil coupling by the input terminal (for example, a reflector). End (such as receiver) and output. In addition to this, the vertical distance of the first coil portion 12 and the second coil portion 22 can be controlled by the design of the lead frame structure 1. For example, adjusting the isolation distance between the first set of lead frames 11 where the first coil portion 12 is located and the second set of lead frames 12 where the second coil portion 22 is located can adjust the effect of electrically insulating the two coils from each other.

以上所公開的內容僅為本發明的優選可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及附圖內容所做的等效技術變化,均包含於本發明的申請專利範圍內。 The above disclosure is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, any equivalent technical changes made by using the present specification and the contents of the drawings are included in the application of the present invention. Within the scope of the patent.

Claims (10)

一種用於磁耦合隔離器的雙引線架磁耦合封裝結構的製造方法,其包括:一引線架提供步驟,其包括提供一第一組引線架以及一第二組引線架,其中,所述第一組引線架包括一第一晶片承載部、至少一第一線圈部、多個第一引腳部以及多個第一浮動引腳,且所述第二組引線架包括一第二晶片承載部、至少一第二線圈部、多個第二引腳部以及多個第二浮動引腳;一晶片連接步驟,其包括將至少一第一晶片以及至少一第二晶片分別設置在所述第一晶片承載部與所述第二晶片承載部上且分別電性連接於所述第一引腳部與所述第二引腳部;以及一線圈對位步驟,其包括將所述第一組引線架設置在所述第二組引線架的上方或下方,並分別施加一第一磁場以及一第二磁場至所述第一組引線架與所述第二組引線架,以使得所述第一線圈部與所述第二線圈部相互對位。 A method of manufacturing a dual lead frame magnetically coupled package structure for a magnetically coupled isolator, comprising: a lead frame providing step, comprising: providing a first set of lead frames and a second set of lead frames, wherein the The set of lead frames includes a first wafer carrier, at least one first coil portion, a plurality of first pin portions, and a plurality of first floating pins, and the second group of lead frames includes a second wafer carrier At least one second coil portion, a plurality of second lead portions, and a plurality of second floating pins; a wafer connecting step including disposing at least one first wafer and at least one second wafer respectively at the first And the second lead portion and the second lead portion are respectively electrically connected to the first lead portion and the second lead portion; and a coil alignment step, including the first set of leads a shelf is disposed above or below the second set of lead frames, and respectively applying a first magnetic field and a second magnetic field to the first set of lead frames and the second set of lead frames, such that the first The coil portion and the second coil portion are opposite each other . 如請求項1所述的用於磁耦合隔離器的雙引線架磁耦合封裝結構的製造方法,其中,在所述線圈對位步驟之後,還進一步包括:形成一絕緣封裝體,以封裝所述第一晶片與所述第二晶片並連接所述第一組引線架與所述第二組引線架,其中,每一個所述第一引腳部的一部分裸露在所述絕緣封裝體外,且每一個所述第二引腳部的一部分裸露在所述絕緣封裝體外。 The method of manufacturing a dual lead frame magnetic coupling package structure for a magnetic coupling isolator according to claim 1, wherein after the coil alignment step, further comprising: forming an insulating package to encapsulate the a first wafer and the second wafer are connected to the first set of lead frames and the second set of lead frames, wherein a portion of each of the first lead portions is exposed outside the insulating package, and each A portion of one of the second lead portions is exposed outside the insulating package. 如請求項1所述的用於磁耦合隔離器的雙引線架磁耦合封裝結構的製造方法,其中,所述第一磁場與所述第二磁場具有相反方向。 A method of manufacturing a dual lead frame magnetic coupling package structure for a magnetic coupling isolator according to claim 1, wherein the first magnetic field and the second magnetic field have opposite directions. 如請求項1所述的用於磁耦合隔離器的雙引線架磁耦合封裝結構的製造方法,其中,所述第一組引線架包括兩個第一線圈 部,所述第二組引線架包括兩個第二線圈部,且所述兩個第一線圈部分別與所述兩個第二線圈部相互對位。 A method of manufacturing a dual lead frame magnetic coupling package structure for a magnetic coupling isolator according to claim 1, wherein the first group of lead frames includes two first coils And the second set of lead frames includes two second coil portions, and the two first coil portions are respectively aligned with the two second coil portions. 如請求項1所述的用於磁耦合隔離器的雙引線架磁耦合封裝結構的製造方法,其中,在所述引線架提供步驟中,所述第一組引線架與所述第二組引線架是彼此分離。 A method of manufacturing a dual lead frame magnetic coupling package structure for a magnetic coupling isolator according to claim 1, wherein in the lead frame providing step, the first group of lead frames and the second group of leads The shelves are separated from each other. 一種用於磁耦合隔離器的雙引線架磁耦合封裝結構,其包括:一第一組引線架,所述第一組引線架包括一第一晶片承載部、至少一第一線圈部、多個第一引腳部以及多個第一浮動引腳;一第二組引線架,所述第二組引線架且包括一第二晶片承載部、至少一第二線圈部、多個第二引腳部以及多個第二浮動引腳;一第一晶片,所述第一晶片設置在所述第一晶片承載部;一第二晶片,所述第二晶片設置在所述第二晶片承載部;以及一絕緣封裝體,所述絕緣封裝體封裝所述第一晶片與所述第二晶片並連接所述第一組引線架與所述第二組引線架,其中,每一個所述第一引腳部的一部分裸露在所述絕緣封裝體外,且每一個所述第二引腳部的一部分裸露在所述絕緣封裝體外,所述第一引腳部的所述部分以及所述第二引腳部的所述部分用以分別提供一隔離電壓至所述第一組引線架以及所述第二組引線架;其中,所述第一組引線架設置於所述第二組引線架的上方或者下方,所述第一組引線架與所述第二組引線架之間具有一高度差,且所述第一組引線架與所述第二組引線架彼此電性隔離,所述第一線圈部與所述第二線圈部相互匹配而產生磁耦合。 A dual lead frame magnetic coupling package structure for a magnetically coupled isolator, comprising: a first set of lead frames, the first set of lead frames comprising a first wafer carrying portion, at least one first coil portion, and a plurality of a first lead portion and a plurality of first floating pins; a second set of lead frames, the second set of lead frames further comprising a second wafer carrying portion, at least one second coil portion, and a plurality of second pins And a plurality of second floating pins; a first wafer, the first wafer is disposed on the first wafer carrier; a second wafer, the second wafer is disposed on the second wafer carrier; And an insulative package encapsulating the first wafer and the second wafer and connecting the first set of lead frames and the second set of lead frames, wherein each of the first leads a portion of the foot is exposed outside the insulating package, and a portion of each of the second lead portions is exposed outside the insulating package, the portion of the first lead portion and the second pin The portion of the portion is used to provide an isolation voltage to the a first set of lead frames and the second set of lead frames; wherein the first set of lead frames are disposed above or below the second set of lead frames, the first set of lead frames and the second set There is a height difference between the lead frames, and the first set of lead frames and the second set of lead frames are electrically isolated from each other, and the first coil portion and the second coil portion are matched to each other to generate magnetic coupling. 如請求項6所述的用於磁耦合隔離器的雙引線架磁耦合封裝結構,其中,所述第一晶片包括一線圈驅動電路單元,所述第二 晶片包括一接收電路單元,所述第一晶片通過一第一連接線而與所述第一線圈部形成一第一封閉電路,所述第二晶片通過一第二連接線而與所述第二線圈部形成一第二封閉電路。 The dual lead frame magnetic coupling package structure for a magnetic coupling isolator according to claim 6, wherein the first wafer includes a coil driving circuit unit, and the second The chip includes a receiving circuit unit, the first wafer forms a first closed circuit with the first coil portion through a first connecting line, and the second chip passes through a second connecting line and the second connecting line The coil portion forms a second closed circuit. 如請求項7所述的用於磁耦合隔離器的雙引線架磁耦合封裝結構,其中,一高頻訊號通過所述線圈驅動電路單元與所述第一線圈部兩者的電性連接以傳輸至所述第一線圈部,且所述第二線圈部通過所述接收電路單元與所述第二線圈部兩者的電性連接以接收一高頻電壓。 The dual lead frame magnetic coupling package structure for a magnetic coupling isolator according to claim 7, wherein a high frequency signal is electrically connected through the coil driving circuit unit and the first coil portion to transmit To the first coil portion, and the second coil portion is electrically connected to both the receiving circuit unit and the second coil portion to receive a high frequency voltage. 如請求項6所述的用於磁耦合隔離器的雙引線架磁耦合封裝結構,其中,所述第一晶片與所述第二晶片彼此背對設置。 A two-lead frame magnetic coupling package structure for a magnetically coupled isolator according to claim 6, wherein the first wafer and the second wafer are disposed opposite to each other. 如請求項6所述的用於磁耦合隔離器的雙引線架磁耦合封裝結構,其中,所述第一線圈部與所述第二線圈部之間的所述高度差介於100至500微米之間,且在所述第一線圈部與所述第二線圈部之間填充有一聚醯亞胺材料。 The dual lead frame magnetic coupling package structure for a magnetic coupling isolator according to claim 6, wherein the height difference between the first coil portion and the second coil portion is between 100 and 500 μm Between the first coil portion and the second coil portion is filled with a polyimide material.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103944360A (en) * 2012-11-14 2014-07-23 电力集成公司 Switch mode power converters using magnetically coupled galvanically isolated lead frame communication
WO2016100211A1 (en) * 2014-12-19 2016-06-23 Elwha Llc Non-contacting inductive interconnects

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103944360A (en) * 2012-11-14 2014-07-23 电力集成公司 Switch mode power converters using magnetically coupled galvanically isolated lead frame communication
WO2016100211A1 (en) * 2014-12-19 2016-06-23 Elwha Llc Non-contacting inductive interconnects

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