TWI652799B - Magnetic memory device and method of manufacturing same - Google Patents

Abstract

The invention provides a magnetic memory device capable of improving memory density and a manufacturing method thereof. According to an embodiment, the magnetic memory device includes a metal-containing layer, first to fourth magnetic layers, first and second intermediate layers, and a control unit. The metal-containing layer includes the first to fifth parts. The first magnetic layer is separated from the third portion in a first direction crossing the second direction from the first portion to the second portion. The second magnetic layer is provided between one of the third portions and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion in the first direction. The fourth magnetic layer is provided between a portion of the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The control unit is connected to the first and second parts. The length of the third direction intersecting the first direction and the second direction of the third portion is longer than the length of the third direction of the second magnetic layer. The length of the third part is longer than the length of the third direction of the fifth part.

Description

Magnetic memory device and manufacturing method thereof

Embodiments of the present invention generally relate to a magnetic memory device and a method of manufacturing the same.

In a magnetic memory device, it is desired to increase the memory density.

An embodiment of the present invention provides a magnetic memory device capable of improving the memory density and a manufacturing method thereof. According to an embodiment of the present invention, the magnetic memory device includes a metal-containing layer, first to fourth magnetic layers, first and second intermediate layers, and a control unit. The metal-containing layer includes a first part, a second part, a third part between the first part and the second part, a fourth part between the third part and the second part, and the third part Part 5 between part 4 above. The first magnetic layer is separated from the third portion in a first direction that intersects a second direction from the first portion toward the second portion. The second magnetic layer is provided between a portion of the third portion and the first magnetic layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer, and is non-magnetic. The third magnetic layer is separated from the fourth portion in the first direction. The fourth magnetic layer is provided between a portion of the fourth portion and the third magnetic layer. The second intermediate includes a portion provided between the third magnetic layer and the fourth magnetic layer, and is non-magnetic. The control unit is electrically connected to the first part and the second part. The length of the third portion along the third direction crossing the first direction and the second direction is longer than the length of the second magnetic layer along the third direction. The length of the third section is longer than the length of the fifth section along the third direction. The control unit performs a first write operation that supplies a first write current from the first part to the second part, and a second write that supplies a second write current from the second part to the first part Into action. The first resistance between the first magnetic layer and the first portion after the first writing operation, and the second resistance between the first magnetic layer and the first portion after the second writing operation different. According to the magnetic memory device configured as described above, a magnetic memory device capable of improving the memory density can be provided.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. Where the drawings are schematic or conceptual, the relationship between the thickness and width of each part and the size ratio between parts may not necessarily be the same as the actual ones. In the case of the same part, there may be cases where the dimensions or ratios are different due to different drawings. In this specification and the drawings, the same elements as the above-mentioned drawings are marked with the same symbols, and detailed descriptions are appropriately omitted. (First Embodiment) Figs. 1 (a) to 1 (d) are schematic diagrams illustrating a magnetic memory device according to a first embodiment. Fig. 1 (a) is a perspective view. Fig. 1 (b) is a sectional view taken along the line A1-A2 of Fig. 1 (a). Fig. 1 (c) is a sectional view taken along the line B1-B2 in Fig. 1 (a). Fig. 1 (d) is a sectional view taken along the line C1-C2 of Fig. 1 (a). As shown in FIGS. 1 (a) to 1 (d), the magnetic memory device 110 of this embodiment includes a metal-containing layer 21, a first magnetic layer 11, a second magnetic layer 12, a first intermediate layer 11i, and a control unit 70. . In this example, a base member 20s, a third magnetic layer 13, a fourth magnetic layer 14, and a second intermediate layer 12i are further provided. The first magnetic layer 11, the second magnetic layer 12, and the first intermediate layer 11i are included in the first laminated body SB1. The third magnetic layer 13, the fourth magnetic layer 14, and the second intermediate layer 12i are included in the second laminated body SB2. Each of these layers corresponds to one memory part (memory cell). In this way, a plurality of laminated bodies are provided in the magnetic memory device 110. The number of laminated bodies is arbitrary. A metal-containing layer 21 is provided on the base member 20s. The laminated body is provided on the metal-containing layer 21. The base member 20s may be at least a part of the substrate, and the base member 20s is, for example, insulating. The base member 20s may include a substrate or the like containing at least one of silicon oxide and aluminum oxide. The silicon oxide is, for example, thermal silicon oxide. The metal-containing layer 21 contains, for example, tantalum (Ta). Examples of the material of the metal-containing layer 21 will be described later. The metal-containing layer 21 includes a first portion 21a to a fifth portion 21e. The third portion 21c is located between the first portion 21a and the second portion 21b. The fourth portion 21d is located between the third portion 21c and the second portion 21b. The fifth portion 21e is located between the third portion 21c and the fourth portion 21d. A first laminated body SB1 is provided on the third portion 21c. A second laminated body SB2 is provided on the fourth portion 21d. No laminated body is provided on the fifth portion 21e. The fifth portion 21e is provided with an insulating portion described later. The first magnetic layer 11 is spaced from the third portion 21c along the first direction. Let the first direction be the Z-axis direction. Let one of the axes perpendicular to the Z-axis direction be the X-axis direction. Let the direction perpendicular to the Z-axis direction and the X-axis direction be the Y-axis direction. In the metal-containing layer 21, a direction from the first portion 21a toward the second portion 21b is set to a second direction. The second direction is, for example, the X-axis direction. The first direction intersects the second direction. The metal-containing layer 21 extends in the X-axis direction. The second magnetic layer 12 is provided between a portion of the third portion 21 c and the first magnetic layer 11. The first intermediate layer 11 i includes a portion provided between the first magnetic layer 11 and the second magnetic layer 12. The first intermediate layer 11i is non-magnetic. In the second multilayer body SB2, the third magnetic layer 13 is spaced from the fourth portion 21d in the first direction (Z-axis direction). The fourth magnetic layer 14 is provided between a portion of the fourth portion 21 d and the third magnetic layer 13. The second intermediate layer 12 i includes a portion provided between the third magnetic layer 13 and the fourth magnetic layer 14. The second intermediate layer 12i is non-magnetic. The first magnetic layer 11 and the third magnetic layer 13 are, for example, a fixed magnetization layer. The second magnetic layer 12 and the fourth magnetic layer 14 are, for example, magnetization free layers. The first magnetization 11M of the first magnetic layer 11 is less likely to change than the second magnetization 12M of the second magnetic layer 12. The third magnetization 13M of the third magnetic layer 13 is less likely to change than the fourth magnetization 14M of the fourth magnetic layer 14. The first intermediate layer 11i and the second intermediate layer 12i function as, for example, channel layers. The multilayer body (the first multilayer body SB1, the second multilayer body SB2, and the like) functions as, for example, a magnetoresistance change element. In the multilayer body, for example, TMR (Tunnel Magneto Resistance Effect) is generated. For example, the resistance on the path including the first magnetic layer 11, the first intermediate layer 11 i, and the second magnetic layer 12 changes according to the difference between the orientation of the first magnetization 11M and the orientation of the second magnetization 12M. For example, the resistance on the path including the third magnetic layer 13, the second intermediate layer 12i, and the fourth magnetic layer 14 changes in accordance with the difference between the orientation of the third magnetization 13M and the orientation of the fourth magnetization 14M. The laminated body has, for example, a magnetic tunnel junction (MTJ). In this example, the first magnetization 11M and the third magnetization 13M are along the Y-axis direction. The second magnetization 12M and the fourth magnetization 14M are along the Y-axis direction. The first magnetic layer 11 and the third magnetic layer 13 function as a reference layer, for example. The second magnetic layer 12 and the fourth magnetic layer 14 function as a memory layer, for example. The second magnetic layer 12 and the fourth magnetic layer 14 function as layers for storing information, for example. For example, the first state in which the second magnetization 12M faces in one direction corresponds to the first information memorized. The second state in which the second magnetization 12M faces in the other direction corresponds to the stored second information. The first information corresponds to, for example, one of "0" and "1". The second information corresponds to the other of "0" and "1". Similarly, the orientation of the fourth magnetization 14M corresponds to such information. The second magnetization 12M and the fourth magnetization 14M can be controlled by, for example, a current (writing current) flowing through the metal-containing layer 21. For example, the orientation of the second magnetization 12M and the fourth magnetization 14M can be controlled according to the orientation of the current (writing current) of the metal-containing layer 21. For example, the metal-containing layer 21 functions as a spin orbit layer (SOL). For example, the orientation of the second magnetization 12M can be changed by a spin orbit moment generated between the metal-containing layer 21 and the second magnetic layer 12. For example, the orientation of the fourth magnetization 14M can be changed by the spin orbit moment generated between the metal-containing layer 21 and the fourth magnetic layer 14. The spin orbit moment is derived from a current (writing current) flowing through the metal-containing layer 21. This current (writing current) is supplied by the control unit 70. The control unit includes, for example, a drive circuit 75. The control unit 70 is electrically connected to the first portion 21a, the second portion 21b, and the first magnetic layer 11. In this example, the control unit 70 is further electrically connected to the third magnetic layer 13. In this example, a first switching element Sw1 (for example, a transistor) is provided on a current path between the driving circuit 75 and the first magnetic layer 11. A second switching element Sw2 (for example, a transistor) is provided on a current path between the driving circuit 75 and the third magnetic layer 13. These switching elements are included in the control section 70. The control unit 70 supplies the first write current Iw1 to the metal-containing layer 21 in the first write operation. Thereby, a first state is formed. The first write current Iw1 is a current from the first portion 21a to the second portion 21b. The control unit 70 supplies the second write current Iw2 to the metal-containing layer 21 in the second write operation. Thereby, a second state is formed. The second write current Iw2 is a current from the second portion 21b toward the first portion 21a. The first resistance between the first magnetic layer 11 and the first portion 21a after the first writing operation (first state), and the first magnetic layer 11 and the first resistance after the second writing operation (second state) The second resistance is different between the portions 21a. This difference in resistance is, for example, the difference between the states of the second magnetization 12M between the first state and the second state. Similarly, the control unit 70 performs a third writing operation of supplying the first writing current Iw1 to the metal-containing layer 21. Thereby, a third state is formed. The control unit 70 performs a fourth writing operation of supplying the second writing current Iw2 to the metal-containing layer 21. Thereby, a fourth state is formed. The third resistance between the third magnetic layer 13 and the first portion 21a after the third writing operation (third state), and the third magnetic layer 13 and the first resistance after the fourth writing operation (fourth state). The fourth resistance is different between the portions 21a. This difference in resistance is based on the difference in the state of the fourth magnetization 14M between the third state and the fourth state, for example. The control unit 70 may also detect a characteristic (which may also be a voltage, a current, or the like) of a telecommunication resistance between the first magnetic layer 11 and the first portion 21a during the reading operation. The control unit 70 may also detect a characteristic (which may also be a voltage, a current, or the like) corresponding to the resistance between the third magnetic layer 13 and the first portion 21a during the reading operation. Based on the operation of the first switching element Sw1 and the second switching element Sw2 described above, any one of the first multilayer body SB1 (first memory cell) and the second multilayer body SB2 (second memory cell) is selected. Write and read operations are performed on the required memory cells. As described above, the control unit 70 is electrically connected to the first multilayer body (first magnetic layer 11) and the second multilayer body SB2 (third magnetic layer 13). When information is written in the first multilayer body SB1, a specific selection voltage is applied to the first magnetic layer 11. At this time, a non-selective voltage is applied to the second multilayer body SB2. On the other hand, when information is written in the second multilayer body SB2, a specific selection voltage is applied to the third magnetic layer 13. At this time, a non-selective voltage is applied to the first multilayer body SB1. "Applied voltage" also includes the application of a voltage of 0 volts. The potential of the selection voltage is different from the potential of the non-selection voltage. For example, in the first write operation, the control unit 70 sets the first magnetic layer 11 to a potential (for example, a selected potential) different from the potential (for example, a non-selected potential) of the third magnetic layer 13. In the second write operation, the control unit 70 sets the first magnetic layer 11 to a potential (for example, a selected potential) different from the potential (for example, a non-selected potential) of the third magnetic layer 13. For example, in the third write operation, the control unit 70 sets the third magnetic layer 13 to a potential (for example, a selected potential) different from the potential (for example, a non-selected potential) of the first magnetic layer 11. In the fourth write operation, the control unit 70 sets the third magnetic layer 13 to a potential (for example, a selected potential) different from the potential (for example, a non-selected potential) of the first magnetic layer 11. Such potential selection is performed by, for example, the operation of the first switching element Sw1 and the second switching element Sw2. The plurality of layers correspond to the plurality of memory cells, respectively. Different information can be stored in a plurality of memory cells. When information is stored in a plurality of memory cells, for example, one of "1" and "0" may be stored in a plurality of memory cells, and "1" and "a" may be stored in required ones of the plurality of memory cells 0 "the other. For example, one of "1" and "0" may be memorized in one of the plurality of memory cells, and one of "1" and "0" may be memorized in the other of the plurality of memory cells. In the above, the first portion 21a and the second portion 21b may be replaced with each other. For example, the resistance may be a resistance between the first magnetic layer 11 and the second portion 21b. The resistance may be a resistance between the third magnetic layer 13 and the second portion 21b. In the embodiment, a part of the metal-containing layer 21 protrudes in the Y-axis direction based on the position of the laminated body. The thickness of the protruding portion becomes locally thin. This configuration will be described below. As shown in FIG. 1 (c), the third portion 21c includes a first overlapping area 21cc, a first non-overlapping area 21ca, and a second non-overlapping area 21cb. The first overlapping region 21cc overlaps the second magnetic layer 12 in the first direction (Z-axis direction). The first non-overlapping region 21ca does not overlap the second magnetic layer 12 in the first direction. The second non-overlapping region 21cb does not overlap the second magnetic layer 12 in the first direction. The direction from the first non-overlapping area 21ca to the second non-overlapping area 21cb is along the third direction. The third direction intersects the first direction and the second direction. The third direction is, for example, the Y-axis direction. The first overlapping area 21cc is located between the first non-overlapping area 21ca and the second non-overlapping area 21cb in the third direction. The thickness of at least a part of the first non-overlapping region 21ca along the first direction (Z-axis direction) is thinner than the thickness of the first overlapping region 21cc along the first direction of the first overlapping region 21cc is 21cct. The thickness of at least a part of the second non-overlapping region 21cb along the first direction is thinner than the thickness of the first overlapping region 21cct. As described above, in the embodiment, a protruding portion (the first non-overlapping area 21ca and the second non-overlapping area 21cb) is provided, and the thickness of the protruding portion is thinner than the thickness of the other portion (the first overlapping area 21cc) (the thickness of the first overlapping area) 21cct). This reduces the write current. Hereinafter, examples of the characteristics of the magnetic memory device will be described. 2 (a) and 2 (b) are schematic cross-sectional views illustrating the operation of a magnetic memory device. Fig. 2 (a) corresponds to the magnetic memory device 110 of the embodiment. FIG. 2 (b) corresponds to the magnetic memory device 119 of the first reference example. In this first reference example, a first overlapping region 21cc is provided on the third portion 21c of the metal-containing layer 21, and no protruding portion is provided (the first non-overlapping region 21ca and the second non-overlapping region 21cb). As shown in FIG. 2 (b), if a current flows in the metal-containing layer 21, the orbit of the electrons in the metal-containing layer 21 is bent in accordance with the direction of the spin 21sp. It is considered that, on the upper side portion of the metal-containing layer 21, spins 21sp polarized in an antiparallel direction with respect to the second magnetization 12M of the second magnetic layer 12 are accumulated. On the other hand, it is thought that in the lower portion of the metal-containing layer 21, spins 21sp polarized in a direction parallel to the second magnetization 12M are accumulated. It is considered that, at the end in the Y-axis direction of the metal-containing layer 21, spins 21sp polarized upward or downward are accumulated. In the magnetic memory device 119 of the first reference example, the non-overlapping region as described above is not provided on the metal-containing layer 21. In the first reference example, the polarized spins transmit the spin torque from the metal-containing layer 21 to the multilayer body (MTJ element) through the region (the end in the Y-axis direction) polarized in the vertical direction (Z-axis direction). Therefore, the coherence of the magnetization reversal is liable to deteriorate. In contrast, as shown in FIG. 2 (a), in the magnetic memory device 110 according to the embodiment, the first non-overlapping region 21ca and the second non-overlapping region 21ca are provided in the metal-containing layer 21 in addition to the first overlapping region 21cc. The overlapping area 21cb. In addition, the thickness of the non-overlapping regions is made thinner than the thickness of the first overlapping region 21cc. In this case, it is easy to maintain the coherence of spin polarization. Can improve the transfer efficiency of spin torque. This improves writing efficiency. This reduces the write current. On the other hand, consider a second reference example in which the first non-overlapping area 21ca and the second non-overlapping area 21cb are provided, and the thickness of these non-overlapping areas is the same as the thickness of the first overlapping area 21cc. In this second reference example, the first non-overlapping region 21ca and the second non-overlapping region 21cb do not contribute to the transmission of spin torque. As a result, the write current increases. In contrast, in the magnetic memory device 110 of the embodiment, the thickness of the non-overlapping region is made thinner than the thickness of the first overlapping region 21cc. Thereby, for example, polarized electrons having a homogeneity that reduces the spin polarization can be biased to the edge of the metal-containing layer 21, and the first non-overlapping region 21ca and the second non-overlapping region that flow ineffectively in recording function can be reduced. The shunt current in the overlapping area 21cb. This makes it possible, for example, to reduce the write current and to easily maintain the coherence of the spin polarization. Since the transfer efficiency of the spin torque can be improved, the writing efficiency is improved, and the writing current can be reduced. Since the write current can be reduced, the ability to drive, for example, the memory section can be reduced. Thereby, for example, since the size of the drive can be reduced, the memory density can be increased. The reduction of the write current is advantageous for energy saving. For example, the width (protrusion amount) in the Y-axis direction of the non-overlapping region of the metal-containing layer 21 is greater than the protrusion amount due to processing errors. As shown in FIG. 1 (c), for example, the metal-containing layer 21 has a length 21cay along the third direction (Y-axis direction) of the first non-overlapping region 21ca, and a length along the third direction of the second non-overlapping region 21cb. 21cby in length. At this time, the ratio of the total of the length 21cay and the length 21cby with respect to the thickness 21cct of the first overlapping region is assumed to be the first ratio. The first ratio is a ratio of the protruding amount of the metal-containing layer 21 to the thickness. When the first is higher, the amount of protrusion is larger. On the other hand, as shown in FIG. 1 (b), the second magnetic layer 12 may be tapered. For example, the second magnetic layer 12 has a thickness t12 along the first direction (Z-axis direction). The second magnetic layer 12 has a surface 12L (lower surface) facing the metal-containing layer 21 and a surface 12U (upper surface) facing the first intermediate layer 11i. Let the length of the surface 12L along the second direction (X-axis direction) be 12xL. Let the length of the surface 12U along the second direction (X-axis direction) be 12xU in length. At this time, the first ratio is higher than the ratio of the absolute value of the difference between the length 12xL and the length 12xU to the thickness t12. That is, the first ratio is higher than the above ratio due to the taper provided in the second magnetic layer 12. In this way, by providing larger protrusions (the first non-overlapping region 21ca and the second non-overlapping region 21cb), it is possible to maintain the coherence of the spin polarization and improve the transmission efficiency of the spin torque. Improves write efficiency and reduces write current. This can increase memory density. If the protruding amount of the protruding portion is too large, the width in the Y-axis direction of the metal-containing layer 21 becomes large. When a plurality of metal-containing layers 21 are provided, the distance between the plurality of metal-containing layers 21 becomes large, and the memory density cannot be sufficiently increased. In the embodiment, for example, each of the length 21cay of the first non-overlapping region 21ca along the third direction (Y-axis direction) and the length 21cby of the second non-overlapping region 21cb along the third direction is preferably The width of the second magnetic layer 12 in the third direction (length 21yL described later) is less than 0. 25 times. This can maintain a higher memory density. In an embodiment, the protruding amount of the protruding portion of the metal-containing layer 21 (for example, a length of 21cay or a length of 21cby), such as the spin diffusion length of the metal-containing layer 21 of 0. 5 times to 10 times. As shown in FIG. 1 (c), the length along the third direction (Y-axis direction) of the surface 12L facing the metal-containing layer 21 of the second magnetic layer 12 is set to a length of 12 μL. The length along the third direction (Y-axis direction) of the surface 12U facing the first intermediate layer 11i of the second magnetic layer 12 is set to a length of 12 μU. In the embodiment, the first ratio is higher than the absolute value of the difference between the length 12yL and the length 12yU with respect to the thickness t12 of the second magnetic layer 12 along the first direction. The second laminated body SB2 also has the same configuration as the first laminated body SB1 as follows. As shown in FIG. 1 (d), the fourth portion 21d includes a second overlapping area 21dc, a third non-overlapping area 21da, and a fourth non-overlapping area 21db. The second overlapping region 21dc overlaps the fourth magnetic layer 14 in the first direction (Z-axis direction). The third non-overlapping region 21da does not overlap the fourth magnetic layer 14 in the first direction. The fourth non-overlapping region 21db does not overlap the fourth magnetic layer 14 in the first direction. The direction from the third non-overlapping area 21da to the fourth non-overlapping area 21db is along the third direction (Y-axis direction). The second overlapping area 21dc is located between the third non-overlapping area 21da and the fourth non-overlapping area 21db in the third direction. The thickness of at least a part of the third non-overlapping region 21da along the first direction (Z-axis direction) is thinner than the thickness of the second overlapping region 21dc along the first direction of the second overlapping region 21dc is 21dct. The thickness of at least a part of the fourth non-overlapping region 21db along the first direction is thinner than the thickness of the second overlapping region 21dct. As shown in FIG. 1 (d), the metal-containing layer 21 has a length 21day along the third direction (Y-axis direction) of the third non-overlapping region 21da and a length along the third direction of the fourth non-overlapping region 21db 21dby. At this time, the ratio of the total of the length 21day and the length 21dby to the thickness 21dct of the second overlapping region is set as the second ratio. On the other hand, as shown in FIG. 1 (b), the fourth magnetic layer 14 has a thickness t14 along the first direction (Z-axis direction). The fourth magnetic layer 14 has a surface 14L (lower surface) opposed to the metal-containing layer 21 and a surface 14U (upper surface) opposed to the second intermediate layer 12i. The length of the surface 14L along the second direction (X-axis direction) is set to a length of 14xL. The length of the surface 14U in the second direction (X-axis direction) is set to a length of 14xU. At this time, the second ratio is higher than the ratio of the absolute value of the difference between the length 14xL and the length 14xU to the thickness t14. That is, the second ratio is higher than the ratio due to the taper provided in the fourth magnetic layer 14. As shown in FIG. 1 (d), the length along the third direction (Y-axis direction) of the surface 14L facing the metal containing layer 21 of the fourth magnetic layer 14 is set to a length of 14 μL. The length along the third direction (Y-axis direction) of the surface 14U facing the second intermediate layer 12i of the fourth magnetic layer 14 is set to a length of 14 μU. In the embodiment, the second ratio is higher than the ratio of the absolute value of the difference between the length 14yL and the length 14yU to the thickness t14 of the fourth magnetic layer 14 along the first direction. Information related to the aforementioned length, thickness, and width can be obtained, for example, by a transmission electron microscope. 3 (a) and 3 (b) are schematic diagrams illustrating a magnetic memory device according to the first embodiment. Fig. 3 (a) is a perspective view. Fig. 3 (b) is a plan view. As shown in FIG. 3 (b), the magnetic memory device 110 includes, for example, a plurality of electrodes 22X and a plurality of metal-containing layers 21X. The plurality of electrodes 22X extend in the Y-axis direction, for example. The plurality of electrodes 22X are arranged in the X-axis direction. One of the plurality of electrodes 22X is an electrode 22. The other of the plurality of electrodes 22X is an electrode 22A. The plurality of metal-containing layers 21X extend in the X-axis direction, for example. The plurality of metal-containing layers 21X are aligned in the Y-axis direction. One of the plurality of metal-containing layers 21X is the metal-containing layer 21. The other of the plurality of metal-containing layers 21X is a metal-containing layer 21A. For example, a multilayer body SB0 is provided between the plurality of electrodes 22X and the plurality of metal-containing layers 21X. As shown in FIG. 3 (a), for example, a first multilayer body SB1 is provided between the metal-containing layer 21 and the electrode 22. A second laminated body SB2 is provided between the metal-containing layer 21 and the electrode 22A. As shown in FIG. 3 (b), for example, the distance between the plurality of electrodes 22X is "2F". The distance between the plurality of metal-containing layers 21X is, for example, “3F”. "F" is, for example, the minimum processing size. As shown in FIG. 3 (b), the control unit 70 includes first to third circuits 71 to 73. The first circuit 71 is electrically connected to the first portion 21 a of the metal-containing layer 21. The second circuit 72 is electrically connected to the second portion 21 b of the metal-containing layer 21. The third circuit 73 is electrically connected to the multilayer body SB1 (the first magnetic layer 11) via the electrode 22. The first circuit 71 is electrically connected to each of one ends of the plurality of metal-containing layers 21X. The second circuit 72 is electrically connected to each of the other ends of the plurality of metal-containing layers 21X. The third circuit 73 is electrically connected to each of the plurality of electrodes 22X. In FIG. 3 (b), the switching element is omitted (see FIG. 1 (a)). 4 (a) to 4 (c) are schematic cross-sectional views illustrating another magnetic memory device according to the first embodiment. As shown in FIG. 4 (a), in another magnetic memory device 110A of this embodiment, a metal-containing layer 21, a first laminated body SB1, and a second laminated body SB2 are provided. In this example, in the region between the two laminated bodies, the thickness of the metal-containing layer 21 becomes locally thin. An insulating portion 40 is provided around the plurality of laminated bodies. Otherwise, it is the same as the magnetic memory device 110. In the magnetic memory device 110A, the thickness 21et of the fifth portion 21e of the metal-containing layer 21 along the first direction (Z-axis direction) is thinner than the thickness of the first overlapping region 21cct. The thickness 21et is thinner than the thickness 21dct of the second overlapping region. By setting such a thickness difference, for example, spin homology is improved. For example, in the case where the width (length along the Y-axis direction) of the metal-containing layer 21 is larger than the width (length along the Y-axis direction) of the multilayer body SB0, the spin homology is further improved. For example, since the thickness 21et of the fifth portion 21e of the metal-containing layer 21 is thin, when the electrons pass through the fifth portion 21e, the energy consumption per unit movement distance becomes high. The movement direction of the electrons is along the X-axis direction, and for example, the dispersion (unevenness) of the current flowing direction from the fifth portion 21e to the third portion 21c or the fourth portion 21d becomes smaller. As a result, the dispersion (unevenness) of the direction of the electrons flowing into the multilayer body SB0 is suppressed, and the spin homology is improved. For example, after forming the above-mentioned laminated body on the metal-containing film that becomes the metal-containing layer 21, the surface of the metal-containing film that is not covered by the laminated body is treated (for example, plasma treatment). The treatment is, for example, an oxidation treatment or a nitridation treatment. Thereby, the surface portion of the treated metal-containing film is oxidized or nitrided. The remaining portion becomes the metal-containing layer 21. For example, the thickness difference described above can be formed by such a treatment. The insulating portion 40 includes, for example, at least a part selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride. The insulating portion 40 may include a part of a compound formed by the above-mentioned oxidation or nitridation. A compound layer 41 is provided in this example. The compound layer 41 includes a compound containing a metal contained in the second magnetic layer 12 (or the fourth magnetic layer 14). The compound layer 41 may further include a compound containing a metal contained in the first magnetic layer 11 (or the third magnetic layer 13). The second magnetic layer 12 has a side surface 12s. The side surface 12s intersects the second direction (X-axis direction), for example. The compound layer 41 faces the side surface 12s. The fourth magnetic layer 14 has a side surface 14s. The side surface 14s intersects the second direction (X-axis direction), for example. The compound layer faces the side 14s. The compound layer 41 can suppress, for example, a leakage current on the side surface of the laminated body. As shown in FIG. 4 (b), in another magnetic memory device 110B of this embodiment, a first compound region 42a (compound layer) is provided. The first compound region 42a contains a compound containing a metal contained in the second magnetic layer 12 (or the fourth magnetic layer 14). The first compound region 42 a faces the side surface 12 s of the second magnetic layer 12 and the side surface 14 s of the fourth magnetic layer 14. The first compound region 42 a is located between the second magnetic layer 12 and the fourth magnetic layer 14 in a direction (X-axis direction) connecting the second magnetic layer 12 and the fourth magnetic layer 14. For example, the first compound region 42 a is continuously provided between the second magnetic layer 12 and the fourth magnetic layer 14. The first compound region 42 a is formed by, for example, processing a part of the magnetic film that becomes the second magnetic layer 12 and the fourth magnetic layer 14. The unprocessed portions become the second magnetic layer 12 and the fourth magnetic layer 14. This treatment is oxidation or nitridation. The processed portion (the first compound region 42a) functions as an insulating film. Processing may also include amorphization. The first compound region 42a is provided between the insulating portion 40 and the fifth portion 21e. A second compound region 42b may be provided between the first compound region 42a and the fifth portion 21e. The second compound region 42 b may be formed by, for example, changing a part of the metal-containing film serving as the metal-containing layer 21. The second compound region 42 b includes, for example, an oxide, a nitride, or an oxynitride of a metal contained in the metal-containing layer 21. The second compound region 42b may be formed by the above-mentioned treatment of the first compound region 42a. The boundary between the second compound region 42a and the second compound region 42b may be clear or unclear. The metal contained in the second compound region 42b may also diffuse into the first compound region 42a. The metal contained in the first compound region 42a may also diffuse into the second compound region 42b. The first compound region 42 a may not be connected between the second magnetic layer 12 and the fourth magnetic layer 14. The first compound region 42a may further include a metal contained in the first magnetic layer 11 (or the third magnetic layer 13). As shown in FIG. 4 (c), in another magnetic memory device 110C of this embodiment, the crystal structure of the third portion 21c of the metal-containing layer 21 and other portions of the metal-containing layer 21 (for example, the first portion 21a, the first portion The crystal structures of the second part 21b and the fifth part 21e, etc.) are different. For example, surface treatment is performed on a part of the metal-containing film that becomes the metal-containing layer 21. On the other hand, this processing is not performed on the portions (the third portion 21c and the fourth portion 21d, etc.) located below the laminated body. This process is, for example, irradiation of a gas cluster ion beam. Irradiate, for example, an Ar cluster. By this treatment, the crystal structure of at least a part of the treated part is changed. For example, the crystal structure of the third portion 21c of the metal-containing layer 21 is a β phase. The crystal structure of at least a part (for example, the surface part) of other parts (for example, the first part 21a, the second part 21b, and the fifth part 21e) of the metal-containing layer 21 is an α phase. Information related to these crystal structures is obtained, for example, by observation with a transmission electron microscope. For example, in a unit volume (unit area), the proportion of the β-phase region of the third portion 21c in the entire portion of the third portion 21c is higher than that of other regions (such as the first portion 21a, the second portion 21b, or the fifth portion 21e) The ratio of the β-phase region to the other regions. For example, at least a part of the third portion 21c includes β-phase Ta. For example, at least a part of the first portion 21a (or the fifth portion 21e) includes Ta of the α phase. In the β-phase Ta, the absolute value of the spin Hall angle is large. On the other hand, the conductivity of Ta in the α phase is higher than that of Ta in the β phase. As described above, by making the crystal structure different, for example, a reduction in resistance due to a high electrical conductivity can be achieved, so that the writing power can be reduced. In addition, the resistance of the metal-containing layer 21 can be reduced. By reducing the writing power, for example, the ability to drive a memory unit can be reduced, and the size of the drive can be reduced, for example. Can increase memory density. 5 (a) to 5 (h) are schematic cross-sectional views illustrating another magnetic memory device according to the first embodiment. As shown in FIG. 5 (a), in the magnetic memory device 110a, the thickness of each of the first non-overlapping region 21ca and the second non-overlapping region 21cb changes stepwise. As shown in FIG. 5 (b), in the magnetic memory device 110b, the width of the third direction (Y-axis direction) of the third portion 21c of the metal-containing layer 21 is the largest at the center portion of the first direction (Z-axis direction). . The thickness of each of the first non-overlapping region 21ca and the second non-overlapping region 21cb continuously changes. As shown in FIG. 5 (c), in the magnetic memory device 110c, the width in the third direction (Y-axis direction) of the third portion 21c of the metal-containing layer 21 is the center portion in the first direction (Z-axis direction) is maximum. The thickness of each of the first non-overlapping region 21ca and the second non-overlapping region 21cb changes stepwise. As shown in FIG. 5 (d), in the magnetic memory device 110 d, the third portion 21 c of the metal-containing layer 21 has a surface 21 cU facing the second magnetic layer 12. The width of the surface 21cU in the third direction (the Y-axis direction) is substantially the same as the width of the second magnetic layer 12 in the third direction. For example, the aforementioned width of the surface 21cU is 0 of the aforementioned width of the second magnetic layer 12. 9 times or more 1. Less than 1 time. As shown in FIG. 5 (e), in the magnetic memory device 110e, the third portion 21c of the metal-containing layer 21 has a surface 21cU facing the second magnetic layer 12. The width of the surface 21cU in the third direction (the Y-axis direction) is larger than the width of the second magnetic layer 12 in the third direction. As shown in FIG. 5 (f), in the magnetic memory device 110f, the metal-containing layer 21 has a surface 21cL. The surface 21cL is a surface opposite to the surface 21cU. The width of the surface 21cU along the third direction (Y-axis direction) is larger than the width of the surface 21cL along the third direction (Y-axis direction). In this example, the width of the surface 21cL along the third direction (the Y-axis direction) is substantially the same as the width of the second magnetic layer 12 along the third direction. For example, the width of the surface 21cL is 0 of the width of the second magnetic layer 12. 9 times or more 1. Less than 1 time. As shown in FIG. 5 (g), in the magnetic memory device 110g, the width of the surface 21cU along the third direction (Y-axis direction) is larger than the width of the surface 21cL along the third direction (Y-axis direction). In this example, the width of the surface 21cL in the third direction (the Y-axis direction) is larger than the width of the second magnetic layer 12 in the third direction. As shown in FIG. 5 (h), in the magnetic memory device 110h, the width of the surface 21cU along the third direction (Y-axis direction) is also larger than the width of the surface 21cL along the third direction (Y-axis direction). In this example, the width of the surface 21cL along the third direction (the Y-axis direction) is smaller than the width of the second magnetic layer 12 along the third direction. Thus, in this embodiment, the width of the metal-containing layer 21 can be variously changed. In the embodiment, the center in the Y-axis direction of the multilayer body SB0 and the center in the Y-axis direction of the metal-containing layer 21 may be the same or may be offset. In the embodiment, at least one of the difference in the taper shape and the difference in the taper angle may be provided at the two end portions in the Y-axis direction of the metal-containing layer 21. In the embodiment, the length in the Y-axis direction of the second magnetic layer 12 may be shorter than the length in the Y-axis direction of the metal-containing layer 21. For example, an end portion in the Y-axis direction of the magnetic film serving as the second magnetic layer 12 may be not magnetized by oxidation or the like. The non-oxidized magnetic film becomes the second magnetic film 12. The second magnetic layer may be formed by using a magnetic regional shape formed by oxidation or the like. The metal-containing layer 21 may be formed in accordance with the conductive regional shape of the metal-containing film serving as the metal-containing layer 21. Hereinafter, examples of the metal-containing layer 21, the first magnetic layer 11, the second magnetic layer 12, and the first intermediate layer 11i will be described. The description related to the following metal-containing layer 21 is applicable to other metal-containing layers 21X (metal-containing layer 21A, etc.). The description related to the first magnetic layer 11 below can be applied to the third magnetic layer 13. The description related to the second magnetic layer 12 below can be applied to the fourth magnetic layer. The description related to the first intermediate layer 11i below can be applied to the second intermediate layer 12i. The metal-containing layer 21 may also include, for example, a material having a high spin Hall effect. For example, the metal-containing layer 21 is in contact with the second magnetic layer 12. For example, the metal-containing layer 21 imparts a spin orbit moment to the second magnetic layer 12. The metal-containing layer 21 can also function as, for example, a spin orbit layer (SOL). For example, the orientation of the second magnetization 12M of the second magnetic layer 12 can be changed by the spin orbit moment generated between the metal-containing layer 21 and the second magnetic layer 12. For example, the direction of the second magnetization 12M can be controlled according to the direction of the current flowing in the metal-containing layer 21 (the direction of the first write current Iw1 or the direction of the second write current Iw2). The metal-containing layer 21 includes, for example, at least one selected from the group consisting of tantalum and tungsten. The metal-containing layer 21 includes, for example, at least one selected from the group consisting of β-tantalum and β-tungsten. The spin torque angle of these materials is negative. The absolute value of the spin torque angle of these materials is large. Thereby, the second magnetization 12M can be efficiently controlled by the write current. The metal-containing layer 21 may include at least one selected from the group consisting of platinum or gold. The spin Hall angle of these materials is positive. The absolute value of the spin Hall angle of these materials is large. Thereby, the second magnetization 12M can be efficiently controlled by the write current. The direction (orientation) of the spin orbit moment applied to the second magnetic layer 12 varies depending on the polarity of the spin Hall angle. For example, the metal-containing layer 21 imparts a spin-orbit interaction torque to the second magnetic layer 12. The second magnetic layer 12 is, for example, a magnetization free layer. The second magnetic layer 12 includes, for example, at least one of a ferromagnetic material and a soft magnetic material. The second magnetic layer 12 may include, for example, an artificial grating. The second magnetic layer 12 includes, for example, at least one selected from the group consisting of FePd (iron-palladium), FePt (iron-platinum), CoPd (cobalt-palladium), and CoPt (cobalt-platinum). The soft magnetic material includes, for example, CoFeB (cobalt-iron-boron). The artificial grating includes a laminated film including, for example, a first film and a second film. The first film includes, for example, at least any one of NiFe (nickel-iron), Fe (iron), and Co (cobalt). The second film includes, for example, at least any one of Cu (copper), Pd (palladium), and Pt (platinum). The first film is, for example, a magnetic material, and the second film is, for example, a non-magnetic material. The second magnetic layer may include, for example, a ferrimagnetic material. In the embodiment, for example, the second magnetic layer 12 has in-plane magnetic anisotropy. Thereby, for example, a polarization spin antiparallel to the magnetization direction can be obtained from the metal-containing layer 21. For example, the second magnetic layer 12 may have at least any one of in-plane shape magnetic anisotropy, in-plane crystalline magnetic anisotropy, and in-plane inductive magnetic anisotropy due to stress and the like. The first intermediate layer 11i contains, for example, a material selected from the group consisting of MgO (magnesium oxide), CaO (calcium oxide), SrO (strontium oxide), TiO (titanium oxide), VO (vanadium oxide), NbO (niobium oxide), and Al. ₂ O ₃ (Alumina) at least one of the group. The first intermediate layer 11i is, for example, a tunnel barrier layer. When the first intermediate layer 11i includes MgO, the thickness of the first intermediate layer 11i is, for example, about 1 nm. The first magnetic layer 11 is, for example, a reference layer. The first magnetic layer 11 is, for example, a magnetic fixed layer. The first magnetic layer 11 includes, for example, Co (cobalt) and CoFeB (cobalt-iron-boron). The first magnetization 11M of the first magnetic layer 11 is fixed in a substantially single direction (a direction crossing the Z-axis direction) in a plane. The first magnetic layer 11 is, for example, an in-plane magnetized film. For example, the thickness of the first magnetic layer 11 (reference layer) is thicker than the thickness of the second magnetic layer 12 (free layer). Thereby, the first magnetization 11M of the first magnetic layer 11 is stably fixed in a specific direction. In the embodiment, for example, the base member 20s is alumina. The metal-containing layer 21 is a Ta layer (thickness is, for example, 3 nm or more and 10 nm or less). The second magnetic layer 12 includes, for example, a CoFeB layer (having a thickness of, for example, 1. Above 5 nm 2. 5 nm or less). The first intermediate layer 11i includes, for example, a MgO layer (the thickness is, for example, 0. Above 8 nm 1. 2 nm or less) The first magnetic layer 11 includes first to third films. The first film is provided between the third film and the first intermediate layer 11i. The second film is provided between the first film and the third film. The first film includes, for example, a CoFeB film (with a thickness of, for example, 1. Above 5 nm 2. 5 nm or less). The second film includes, for example, a Ru film (with a thickness of, for example, 0. Above 7 nm 0. 9 nm or less). The third film includes, for example, a CoFeB film (having a thickness of, for example, 1. Above 5 nm 2. 5 nm or less) A ferromagnetic layer may be provided, for example. A first magnetic layer 11 is provided between the ferromagnetic layer and the intermediate layer 11i. The ferromagnetic layer is, for example, an IrMn layer (having a thickness of 7 nm or more and 9 nm or less). The ferromagnetic layer is a first magnetization 11M to which the first magnetic layer 11 is fixed. A Ta layer may be provided on the ferromagnetic layer. (Second Embodiment) Figs. 6 (a) to 6 (d) are schematic diagrams illustrating a magnetic memory device according to a second embodiment. Fig. 6 (a) is a perspective view. Fig. 6 (b) is a sectional view taken along line D1-D2 of Fig. 6 (a). Fig. 6 (c) is a sectional view taken along line E1-E2 of Fig. 6 (a). Fig. 6 (d) is a sectional view taken along line F1-F2 of Fig. 6 (a). As shown in FIGS. 6 (a) to 6 (d), the magnetic memory device 120 of this embodiment also includes a metal-containing layer 21, first to fourth magnetic layers 11 to 14, first intermediate layer 11i, and second intermediate layer. Layer 12i and control section 70. In this example, the metal-containing layer 21 is also provided on the base member 20s. The metal-containing layer 21 includes first to fifth portions 21a to 21e. The third portion 21c is located between the first portion 21a and the second portion 21b. The fourth portion 21d is located between the third portion 21c and the second portion 21b. The fifth portion 21e is located between the third portion 21c and the fourth portion 21d. The first magnetic layer 11 is separated from the third portion 21c in the first direction (for example, the Z-axis direction). The first direction intersects with the second direction (for example, the X-axis direction) from the first portion 21a toward the second portion 21b. The second magnetic layer 12 is provided between a portion of the third portion 21 c and the first magnetic layer 11. The first intermediate layer 11 i includes a portion provided between the first magnetic layer 11 and the second magnetic layer 12. The first intermediate layer 11i is non-magnetic. The first magnetic layer 11, the second magnetic layer 12, and the first intermediate layer 11i are contained in the first laminated body SB1. The third magnetic layer 13 is spaced from the fourth portion 21d in the first direction (Z-axis direction). The fourth magnetic layer 14 is provided between a portion of the fourth portion 21 d and the third magnetic layer 13. The second intermediate layer 12 i includes a portion provided between the third magnetic layer 13 and the fourth magnetic layer 14. The second intermediate layer 12i is non-magnetic. The third magnetic layer 13, the fourth magnetic layer 14, and the second intermediate layer 12i are contained in the second laminated body SB2. The control unit 70 is electrically connected to the first portion 21a, the second portion 21b, the first magnetic layer 11 and the third magnetic layer 13. In this example, a first switching element Sw1 is also provided in a current path between the driving circuit 75 of the control section 70 and the first magnetic layer 11. A second switching element Sw2 is provided in a current path between the driving circuit 75 and the third magnetic layer 13. In this example as well, the control unit 70 supplies the first writing current Iw1 from the first portion 21a to the second portion 21b to the metal-containing layer 21 in the first writing operation to form the first state. In the second writing operation, the control unit 70 supplies the second writing current Iw2 from the second portion 21b to the first portion 21a to the metal-containing layer 21 to form a second state. The first resistance between the first magnetic layer 11 and the first portion 21a in the first state is different from the second resistance between the first magnetic layer 11 and the first portion 21a in the second state. The control unit 70 supplies the first write current Iw1 to the metal-containing layer 21 to form a third state. The control unit 70 supplies the second write current Iw2 to the metal-containing layer 21 to form a fourth state. The third resistance between the third magnetic layer 13 and the first portion 21a in the third state is different from the fourth resistance between the third magnetic layer 13 and the first portion 21a in the fourth state. The control unit 70 may also detect a characteristic (which may also be a voltage, a current, or the like) corresponding to the resistance between the first magnetic layer 11 and the first portion 21a during the reading operation. The control unit 70 can also detect the characteristics (also voltage or current, etc.) corresponding to the resistance between the third magnetic layer 13 and the first portion 21a during the reading operation. As shown, the width in the Y-axis direction of the metal-containing layer 21 is different between the third portion 21c and the fifth portion 21e. The width in the Y-axis direction of the metal-containing layer 21 is different between the fourth portion 21d and the fifth portion 21e. In addition, the configuration described for the magnetic memory device 110 can be applied to the magnetic memory device 120, for example. An example of the width in the Y-axis direction of the metal-containing layer 21 will be described below. As shown in FIG. 6 (a), the third portion 21 c of the metal-containing layer 21 projects in the Y-axis direction based on the second magnetic layer 12. For example, as shown in FIG. 6 (b), the length of the third portion 21c along the third direction (for example, the Y-axis direction) is set to a length 21cy. The third direction intersects the first direction (Z-axis direction) and the second direction (X-axis direction). On the other hand, let the length of the second magnetic layer 12 along the third direction be 12y. The length 12y is, for example, the average of the length 12yL and the length 12yU already described. The length 21cy is longer than the length 12y. On the other hand, as shown in FIG. 6 (d), the length of the fifth portion 21e of the metal containing layer 21 along the third direction is set to a length 21ey. The aforementioned length 12cy of the third portion 21c of the metal-containing layer 21 is longer than the aforementioned length 21ey of the fifth portion 21e along the third direction. On the other hand, as shown in FIG. 6 (c), the length 21dy of the fourth portion 21d of the metal containing layer 21 along the third direction is longer than the length 14y of the fourth magnetic layer 14 along the third direction. The length 21dy of the fourth portion 21d is longer than the length 21ey of the fifth portion 21e (see FIG. 6 (d)). In this way, the width of the metal-containing layer 21 in the portion (the third portion 21c and the fourth portion 21d) in which the laminate is provided is larger than the metal-containing layer 21 in the portion (the fifth portion 21e) where the laminate is not provided The width along the Y axis. For example, a third reference example in which the width in the Y-axis direction of the metal-containing layer 21 is fixed is assumed. For example, in the metal-containing layer 21, the conductance of the area overlapping the build-up layer is higher than the conductance of the area not overlapping the build-up layer. Therefore, in the third reference example, the current is more easily concentrated at the end in the Y-axis direction of the metal-containing layer 21 than in the center portion in the Y-axis direction. The dispersion (unevenness) in the direction of the recording current due to the current concentration causes, for example, the dispersion (unevenness) in the direction of the spin current. As a result, the dispersion of spin homogeneity becomes large, and the recording current increases. On the other hand, in the embodiment, the width in the Y-axis direction of the region of the metal-containing layer 21 that coincides with the build-up layer is partially widened. For example, a protruding portion (a first non-overlapping region 21ca and a second non-overlapping region 21cb) is provided in the third portion 21c. This protrusion becomes a spin local area. As a result, compared with the third reference example described above, current concentration at the end in the Y-axis direction of the metal-containing layer 21 can be suppressed. For example, the distribution of the write current becomes uniform. This effectively obtains the effect of the spin orbit moment. For example, the control of the second magnetization 12M of the second magnetic layer 12 using the write current is efficiently performed. Thereby, for example, a magnetic memory device capable of reducing a write current can be provided. The memory density can also be increased in this embodiment. For example, since the non-overlapping regions are provided in the third portion 21c and the fourth portion 21d, a difference in width as described above occurs. That is, the third portion 21c includes a first overlapping area 21cc, a first non-overlapping area 21ca, and a second non-overlapping area 21cb. The first overlapping region 21cc overlaps the second magnetic layer 12 in the first direction (Z-axis direction). The first non-overlapping region 21ca does not overlap the second magnetic layer 12 in the first direction. The second non-overlapping region 21cb does not overlap the second magnetic layer 12 in the first direction. The direction from the first non-overlapping area 21ca to the second non-overlapping area 21cb is along the third direction (Y-axis direction). The first overlapping area 21cc is located between the first non-overlapping area 21ca and the second non-overlapping area 21cb in the third direction. Similarly, the fourth portion 21d includes a second overlapping area 21dc, a third non-overlapping area 21da, and a fourth non-overlapping area 21db. The second overlapping region 21dc overlaps the fourth magnetic layer 14 in the first direction (Z-axis direction). The third non-overlapping region 21da does not overlap the fourth magnetic layer 14 in the first direction. The fourth non-overlapping region 21db does not overlap the fourth magnetic layer 14 in the first direction. The direction from the third non-overlapping area 21da to the fourth non-overlapping area 21db is along the third direction (Y-axis direction). The second overlapping area 21dc is located between the third non-overlapping area 21da and the fourth non-overlapping area 21db in the third direction. In this embodiment, the thickness of the non-overlapping region may be the same as the thickness of the overlapping region. In this embodiment, the thickness of the non-overlapping region may be thicker than the thickness of the overlapping region. As described later, the thickness of the non-overlapping region may be thinner than the thickness of the overlapping region. FIG. 7 is a schematic plan view illustrating a magnetic memory device according to a second embodiment. As shown in FIG. 7, in the magnetic memory device 120, a plurality of electrodes 22X and a plurality of metal containing layers 21X may be provided. The plurality of electrodes 22X and the plurality of metal-containing layers 21X are as described with reference to FIG. 3 (b). For example, a multilayer body SB0 is provided between the plurality of electrodes 22X and the plurality of metal-containing layers 21X. For example, a first multilayer body SB1 is provided between the metal-containing layer 21 and the electrode 22. A second multilayer body SB2 is provided between the metal-containing layer 21 and the electrode 22A. In this example, the position of the end of the fifth portion 21e of the metal-containing layer 21 is substantially the position along the end of the second magnetic layer 12 (the position of the end of the first multilayer body SB1). For example, the length 21ey of the fifth part 21e along the third direction (Y-axis direction) is 0, which is the length of the second magnetic layer 12 along the third direction 12y. 9 times or more 1. Less than 1 time. In this embodiment, one laminated body SB1 may be provided. For example, the magnetic memory device 120 shown in FIG. 6 (a) may include a metal-containing layer 21, a first magnetic layer 11, a second magnetic layer 12, a first intermediate layer 11i, and a control unit 70. At this time, the length 21cy (see FIG. 6 (b)) of the third portion 21c along the third direction (Y-axis direction) crossing the first direction and the second direction is longer than the length of the second magnetic layer 12 along the third direction. The length of the direction is 12y longer. In addition, the length 21cy of the third portion 21c is longer than the length along the third direction of the portion between the third portion 21c and the second portion 21b (or, for example, the fifth portion 21e shown in FIG. 6 (a)). (For example, the length 21ey shown in FIG. 6 (d)) is longer. In this case, the control unit 70 also performs the first and second write operations described above. At this time, the first resistance between the first magnetic layer 11 after the first writing operation and any one of the first portion 21a and the second portion 21b, and the first magnetic layer 11 after the second writing operation, The second resistance is different between any of the first portion 21a and the second portion 21b. A magnetic memory device can be provided in such a magnetic memory device, which can also improve the memory density. 8 (a) and 8 (b) are schematic cross-sectional views illustrating a magnetic memory device according to a second embodiment. Fig. 8 (a) is a sectional view corresponding to the line D1-D2 of Fig. 6 (a). Fig. 8 (b) is a sectional view corresponding to the line E1-E2 in Fig. 6 (a). As shown in FIG. 8 (a), in another magnetic memory device 121 of this embodiment, the third portion 21c of the metal-containing layer 21 includes a first overlapping region 21cc, a first non-overlapping region 21ca, and a second non-overlapping region 21cb. . In this example, the thickness of at least a part of the first non-overlapping region 21ca along the first direction (Z-axis direction) is thinner than the thickness of the first overlapping region 21cc along the first direction along the first direction 21cct. The thickness of at least a part of the second non-overlapping region 21cb along the first direction is thinner than the thickness of the first overlapping region 21cct. As shown in FIG. 8 (b), the fourth portion 21d includes a second overlapping area 21dc, a third non-overlapping area 21da, and a fourth non-overlapping area 21db. The thickness of at least a part of the third non-overlapping region 21da along the first direction (Z-axis direction) is thinner than the thickness of the second overlapping region 21dc along the first direction of the second overlapping region 21dc. The thickness of at least a part of the fourth non-overlapping region 21db along the first direction is thinner than the thickness of the second overlapping region 21dct. Otherwise, it is the same as the magnetic memory device 120. In the magnetic memory device 121, by reducing the non-overlapping region, for example, the homology of spin polarization can be maintained. It can improve the transfer efficiency of spin torque and suppress the recording current. This improves writing efficiency. This reduces the write current. This can further increase the memory density. In the magnetic memory device 121, the third portion 21c, the first overlapping region 21cc, and the second magnetic layer 12 are overlapped in the first direction (Z-axis direction). The first non-overlapping region 21ca does not overlap the second magnetic layer 12 in the first direction. The second non-overlapping region 21cb does not overlap the second magnetic layer 12 in the first direction. The direction from the first non-overlapping area 21ca to the second non-overlapping area 21cb is along the third direction (Y-axis direction). The first overlapping area 21cc is located between the first non-overlapping area 21ca and the second non-overlapping area 21cb in the third direction. Similarly, the fourth portion 21d includes a second overlapping area 21dc, a third non-overlapping area 21da, and a fourth non-overlapping area 21db. The second overlapping region 21dc overlaps the fourth magnetic layer 14 in the first direction (Z-axis direction). The third non-overlapping region 21da does not overlap the fourth magnetic layer 14 in the first direction. The fourth non-overlapping region 21db does not overlap the fourth magnetic layer 14 in the first direction. The direction from the third non-overlapping region 21d to the fourth non-overlapping region 21db is along the third direction (Y-axis direction). The second overlapping area 21dc is located between the third non-overlapping area 21da and the fourth non-overlapping area 21db in the third direction. In the magnetic memory device 121, the total length of the first non-overlapping area 21ca along the third direction (Y-axis direction) and the length of the second non-overlapping area 21cb along the third direction 21cby are compared with the first The ratio of the overlapped region thickness 21cct is set to the first ratio. As the magnetic memory device 121, a part of the configuration of the magnetic memory device 110 (see FIG. 1 (b)) can be applied. In the magnetic memory device 121, the thickness of the second magnetic layer 12 (thickness of the second magnetic layer along the first direction) is also set to a thickness t12 (see FIG. 1 (b)). The length along the second direction of the surface 12L of the second magnetic layer 12 facing the metal-containing layer 21 was set to a length of 12 × L. The length along the second direction of the surface 12U of the second magnetic layer 12 facing the first intermediate layer 11i is set to a length of 12xU. For example, the first ratio is higher than the ratio of the absolute value of the difference between the length 12xL and the length 12xU to the thickness t12. By increasing the width in the Y-axis direction of the non-overlapping region, for example, dispersion of spin homology can be suppressed. It can improve the writing efficiency and reduce the writing current. 9 (a) to 9 (c) are schematic cross-sectional views illustrating another magnetic memory device according to the second embodiment. As shown in FIG. 9 (a), in another magnetic memory device 122A of this embodiment, a metal-containing layer 21, a first laminated body SB1, and a second laminated body SB2 are also provided. In the magnetic memory device 122A, the thickness 21et of the fifth portion 21e of the metal-containing layer 21 along the first direction (Z-axis direction) is thinner than the thickness of the first overlapping region 21cct. The thickness 21et is thinner than the thickness 21dct of the second overlapping region. By setting such a thickness difference, for example, spin homology is improved. In this example, a compound layer 41 is provided. The compound layer 41 includes a compound containing a metal contained in the second magnetic layer 12 (or the fourth magnetic layer 14). The compound layer 41 faces the side surface 12s of the second magnetic layer 12. The compound layer 41 faces the side surface 14s of the fourth magnetic layer 14. The compound layer 41 can suppress, for example, a leakage current on the side surface of the laminated body. As shown in FIG. 9 (b), in another magnetic memory device 122B of this embodiment, a first compound region 42a (compound layer) is provided. The first compound region 42a contains a compound containing a metal contained in the second magnetic layer 12 (or the fourth magnetic layer 14). The first compound region 42 a faces the side surface 12 s of the second magnetic layer 12 and the side surface 14 s of the fourth magnetic layer 14. The first compound region 42 a is provided continuously between the second magnetic layer 12 and the fourth magnetic layer 14. A second compound region 42b may be provided between the first compound region 42a and the fifth portion 21e. The second compound region 42 b includes, for example, an oxide, a nitride, or an oxynitride of a metal contained in the metal-containing layer 21. In another magnetic memory device 122C of this embodiment shown in FIG. 9 (c), the crystal structure of the third portion 21c of the metal-containing layer 21 and other portions of the metal-containing layer 21 (for example, the first portion 21a, the second portion The crystal structures of the part 21b and the 5th part 21e, etc.) are different. For example, the crystal structure of the third portion 21c of the metal-containing layer 21 is a β phase. The crystal structure of at least a part (for example, the surface part) of other parts (for example, the first part 21a, the second part 21b, and the fifth part 21e) of the metal-containing layer 21 is an α phase. For example, in the unit volume (unit area), the ratio of the β-phase region of the third part 21c to the entirety of the third part 21c is higher than other regions (such as the first part 21a, the second part 21b, or the fifth part 21e, etc.) The ratio of β-phase region to the total of other regions. For example, at least a part of the third portion 21c includes β-phase Ta. For example, at least a part of the first portion 21a (or the fifth portion 21e) includes Ta of the α phase. For example, higher spin Hall effect can be obtained, and write current can be reduced. In addition, the resistance of the metal-containing layer 21 can be reduced. 10 (a) to 10 (d) are schematic plan views illustrating another magnetic memory device according to the second embodiment. As shown in FIG. 10 (a), in the magnetic memory device 123a, the length 21ey of the fifth portion 21e along the third direction (Y-axis direction) and the length 12y of the second magnetic layer 12 along the third direction are substantially the same. the same. For example, length 21ey is 0 of length 12y. 9 times or more 1. Less than 1 time. As shown in FIG. 10 (b), in the magnetic memory device 123b, the length 21ey of the fifth portion 21e along the third direction (Y-axis direction) is longer than the length 12y of the second magnetic layer 12 along the third direction. long. As shown in FIG. 10 (c), in the magnetic memory device 123c, the width in the second direction (X-axis direction) of the first non-overlapping region 21ca is substantially the same as the width in the second direction of the second magnetic layer 12. For example, the width of the second non-overlapping region 21ca in the second direction is 0 from the width of the second magnetic layer 12 along the second direction. 9 times or more 1. Less than 1 time. As shown in FIG. 10 (d), in the magnetic memory device 123d, the width of the second non-overlapping region 21ca in the second direction (X-axis direction) is smaller than the width of the second magnetic layer 12 along the second direction. (Third embodiment) A third embodiment is a method for manufacturing a magnetic memory device according to the second embodiment. FIG. 11 is a flowchart illustrating a method of manufacturing the magnetic memory device according to the third embodiment. Figs. 12 (a) to 12 (d), Figs. 13 (a) to 13 (e), Figs. 14 (a) to 14 (c), Figs. 15 (a), and 15 (b) are illustrative examples. 3 is a schematic diagram of a manufacturing method of a magnetic memory device according to an embodiment. 12 (a), 12 (c), 13 (d), 14 (a) to 14 (c), 15 (a), and 15 (b) are schematic plan views. 12 (b), 12 (d), 13 (a) to 13 (c), and 13 (e) are schematic cross-sectional views. As shown in FIG. 11, a laminated film is formed on the metal-containing film provided on the base member 20s (step S110). For example, as shown in FIG. 12 (b), a metal-containing film 21F (for example, a Ta film) is provided on the base member 20s (for example, an alumina substrate). A direction perpendicular to the surface 21Fa of the metal-containing film 21F is assumed to be a first direction (Z-axis direction). Let one direction perpendicular to the Z-axis direction be the X-axis direction. Let the direction perpendicular to the Z-axis direction and the X-axis direction be the Y-axis direction. The metal-containing film 21F becomes the metal-containing layer 21. A multilayer film SBF is provided on the metal-containing film 21F. The laminated film SBF includes a first magnetic film 11F, a second magnetic film 12F, and an intermediate film 11iF. The second magnetic film 12F is provided between the first magnetic film 11F and the metal-containing film 21F. The intermediate film 11iF is provided between the first magnetic film 11F and the second magnetic film 12F. The intermediate film 11iF is non-magnetic. A first mask M1 is formed on the multilayer film SBF. The first mask M1 includes, for example, a tungsten film Mb1 (having a thickness of, for example, 25 nm to 35 nm) and a ruthenium film Ma1 (having a thickness of, for example, 1 nm or more and 3 nm or less). A ruthenium film Ma1 is provided between the tungsten film Mb1 and the multilayer film SBF. As shown in FIG. 12 (a), the first mask M1 has a plurality of strip-like shapes extending in the Y-axis direction. At the opening of the first mask M1, the laminated film SBF is exposed. The first mask M1 can also be formed by, for example, a double exposure technique. As shown in FIGS. 12 (c) and 12 (d), the laminated film SBF is processed using the first mask M1. For example, the ion beam IB1 is irradiated. A part of the laminated film SBF is removed. The residual metal contains the film 21F. Thereby, a plurality of first grooves T1 are formed. The plurality of first grooves T1 are arranged in a second direction (X-axis direction) crossing the first direction. The plurality of first grooves T1 extend in the third direction (the Y-axis direction in this example). The third direction intersects the first direction and the second direction. The first groove T1 reaches the metal-containing film 21F. The laminated film SBF is cut by the first groove T1. In this way, in this manufacturing method, a plurality of first grooves T1 are formed (step S120, see FIG. 11). As shown in FIG. 13 (a), for example, a plasma treatment is performed. Thereby, the compound film 43 is formed on the side wall of the laminated film SBF. Plasma treatment is oxygen plasma treatment or nitrogen plasma treatment. For example, the compound film 43 includes a compound containing an element contained in the metal-containing film 21F. The compound film 43 becomes, for example, a protective film. As shown in FIG. 13 (b), a first insulating film 44a is formed in the first trench T1. The first insulating film 44a is, for example, a SiN film. As shown in FIG. 13 (c), a second insulating film 44b is formed. The second insulating film 44b is, for example, a laminated film including an aluminum oxide film and a silicon oxide film. Thereafter, a planarization process is performed. Thereby, as shown in FIG.13 (d) and FIG.13 (e), the 1st insulation part In1 is formed in the 1st trench T1. The first insulating portion In1 includes, for example, the compound film 43 described above. The first insulating portion In1 includes the first insulating film 44a. The first insulating portion In1 may include the second insulating film 44b described above. The formation of the first insulating portion In1 corresponds to step S130 in FIG. 11. Thereafter, as shown in FIG. 11, a plurality of second grooves are formed (step S140, see FIG. 11). For example, as shown in FIG. 14 (a), a second mask M2 is formed on the processed body. The second mask M2 has a plurality of strip-like shapes extending along the second direction (X-axis direction). The processed object is processed using the second mask M2. For example, a part of the multilayer film SBF formed after the first insulating portion In1 is exposed from the opening of the second mask M2 and a part of the first insulating film In1 are removed. Thereby, a plurality of second grooves T2 are formed. The plurality of second grooves T2 extend in the second direction (for example, the X-axis direction). As described, the extending direction (third direction) of the plurality of first grooves T1 intersects the first direction and the second direction. The second direction may be inclined with respect to the third direction, and the second direction may be perpendicular to the third direction. For example, the width of the second mask M2 in the Y-axis direction can be changed by processing using the second mask M2 (for example, irradiation with an ion beam). For example, the second mask M2 is refined. In this process, for example, a difference in etching rate may occur between the multilayer film SBF and the first insulating portion In1. Thereby, for example, the width in the Y-axis direction of one laminated film SBF can be made larger than the width in the Y-axis direction of the first insulating portion In1. For example, as shown in FIG. 14 (b), one of the plurality of second grooves T2 includes a first groove region Tp2 and a second groove region Tq2. The first groove region Tp2 overlaps the laminated film SBF in the third direction (Y-axis direction). The second groove region Tq2 overlaps the first insulating portion In1 in the third direction (Y-axis direction). The width wTp2 of the first groove region Tp2 along the third direction is smaller than the width wTq2 of the second groove region Tq2 along the third direction. Thereafter, as shown in FIG. 11, the metal-containing film 21F exposed in the plurality of second grooves T2 is removed (step S150). Furthermore, a second insulating portion is formed in the plurality of second grooves T2 (step S160). For example, as shown in FIG. 14 (c), the metal-containing film 21F exposed in the plurality of second grooves T2 is removed. The base member 20s provided under the removed metal-containing film 21F is exposed. As shown in FIG. 15 (a), a second insulating portion In2 is formed in the plurality of second grooves T2. At this time, the material of the second insulating portion In2 may be different from the material of the first insulating portion In1. For example, the first insulating portion In1 includes silicon nitride, and the second insulating portion In2 includes silicon oxide. For example, the first insulating portion In1 includes silicon nitride, and the second insulating portion In2 includes aluminum oxide. In different materials, for example, the stress generated will be different. By using different materials for the two insulating portions, different stresses can be obtained, for example. For example, in the second magnetic layer 12 and the fourth magnetic layer 14, mutually different stresses are generated in the X-axis direction and the Y-axis direction. Thereby, uniaxial anisotropy can be generated in these magnetic layers. Thereby, the magnetization of these magnetic layers is stabilized, and a stable memory action is obtained. As shown in FIG. 15 (b), an electrode 22, an electrode 22A, and the like are formed to produce a magnetic memory device. (Fourth Embodiment) Fig. 16 is a schematic cross-sectional view illustrating a magnetic memory device according to a fourth embodiment. As shown in FIG. 16, in the magnetic memory device 142 of this embodiment, a conductive portion 24 is provided. In addition, at least a part of the configuration described for the magnetic memory devices 110 and 120 may be applied to the magnetic memory device 142, for example. The conductive portion 24 is electrically connected to the fifth portion 21e, for example. The conductive portion 24 is in contact with, for example, the fifth portion 21e. A metal-containing layer 21 is provided between the position of the conductive portion 24 and the position of the multilayer body SB0 in the Z-axis direction. For example, a plurality of laminated bodies SB0 are provided on the upper surface of the metal-containing layer 21. For example, a conductive portion 24 is provided on the lower surface of the metal-containing layer 21. By providing the conductive portion 24, the resistance between the first portion 21a and the second portion 21b in the metal-containing layer 21 can be reduced. In this example, the conductive portion 24 includes a first conductive layer 24a and a second conductive layer 24b. A first conductive layer 24a is provided between the metal-containing layer 21 and the second conductive layer 24b. The first conductive layer 24a includes at least any one of copper, tungsten, titanium nitride, and carbon. The second conductive layer 24b includes, for example, at least any one of copper, tungsten, titanium nitride, and carbon. FIG. 17 is a schematic diagram illustrating another magnetic memory device according to the fourth embodiment. As shown in FIG. 17, in another magnetic memory device 143 of this embodiment, first to fourth transistors TR1 to TR3 are provided. In addition, at least a part of the configuration described for the magnetic memory devices 110 and 120 may be applied to the magnetic memory device 143, for example. One end of the first transistor TR1 is electrically connected to the first portion 21 a of the metal-containing layer 21. The other end of the first transistor TR1 is electrically connected to the driving circuit 75. One end of the second transistor TR2 is electrically connected to the second portion 21 b of the metal-containing layer 21. The other end of the second transistor TR2 is electrically connected to the driving circuit 75. One end of the third transistor TR3 is electrically connected to the fifth portion 21e of the metal-containing layer 21. The other end of the third transistor TR3 is electrically connected to the driving circuit 75. These transistors are included in the control unit 70, for example. These transistors can also be regarded as being provided separately from the control section 70. Corresponding to the potential of each of the first gate G1 of the first transistor TR1, the second gate G2 of the second transistor TR2, and the third gate of the third transistor TR3, the metal containing layer 21 needs to flow Current (write current). For example, the write current flows from the first portion 21a to the fifth portion 21e. For example, the write current flows from the fifth portion 21e to the first portion 21a. For example, the write current flows from the second portion 21b to the fifth portion 21e. For example, the write current flows from the fifth portion 21e to the second portion 21b. The direction of the current can be obtained in any combination. Since the transistor is provided in the middle of the metal-containing layer 21 (for example, the fifth portion 21e), the number of control transistors can be reduced. For example, to obtain a large-capacity magnetic memory device. For example, the memory capacity can be increased relative to the size of the entire magnetic memory device. Can increase memory density. (Fifth Embodiment) Fig. 18 is a schematic diagram illustrating a magnetic memory device according to a fifth embodiment. As shown in FIG. 18, the magnetic memory device 151 of this embodiment includes a first metal-containing layer 31, a second metal-containing layer 32, a plurality of first laminated bodies SB1, a plurality of second laminated bodies SB2, and a third laminated body SB3. And control section 70. The first metal-containing layer 31 includes a first portion 31a, a second portion 31b, and a first intervening portion 31m. The first interposed portion 31m is provided between the first portion 31a and the second portion 31b. The second metal-containing layer 32 includes a third portion 32c, a fourth portion 32d, and a second intervening portion 32m. The second interposed portion 32m is provided between the third portion 32c and the fourth portion 32d. A second portion 31b is provided between the first portion 31a and the fourth portion 32d. A third portion 32c is provided between the second portion 31b and the fourth portion 32d. In this example, the first metal-containing layer 31 and the second metal-containing layer 32 are provided on the base member 20s. The plurality of first laminated bodies SB1 are arranged along the first metal-containing layer 31. One of the plurality of first laminated bodies SB1 includes a first magnetic layer 11, a second magnetic layer 12, and a first intermediate layer 11 i. The first magnetic layer 11 is spaced from the first intervening portion 31m in the first direction (for example, the Z-axis direction). The second magnetic layer 12 is provided between the first interposed portion 31 m and the first magnetic layer 11. The first intermediate layer 11 i includes a portion provided between the first magnetic layer 11 and the second magnetic layer 12. The first intermediate layer 11i is non-magnetic. In the first metal-containing layer 31, a direction from the first portion 31a to the second portion 31b is set to a second direction (for example, the X-axis direction). The first direction (for example, the Z-axis direction) intersects the second direction. Each of the plurality of first laminated bodies SB1 has a configuration including the first magnetic layer 11, the second magnetic layer 12, and the first intermediate layer 11 i described above. The second magnetic layer 12 is in contact with, for example, the first metal-containing layer 31. The plurality of second laminated bodies SB2 are arranged along the second metal-containing layer 32. One of the plurality of second laminated bodies SB2 includes a third magnetic layer 13, a fourth magnetic layer 14, and a second intermediate layer 12 i. The third magnetic layer 13 is spaced from the second interposed portion 32m in the first direction (Z-axis direction). The fourth magnetic layer 14 is provided between the second interposed portion 32m and the third magnetic layer 14. The second intermediate layer 12 i includes a portion provided between the third magnetic layer 13 and the fourth magnetic layer 14. The second intermediate layer 12i is non-magnetic. Each of the plurality of second laminated bodies SB2 has a configuration including the third magnetic layer 13, the fourth magnetic layer 14, and the second intermediate layer 12 i described above. The fourth magnetic layer 14 is in contact with, for example, the second metal-containing layer 32. The third laminated body SB3 is provided between the plurality of first laminated bodies SB1 and the plurality of second laminated bodies SB2. The third laminated body SB3 includes a fifth magnetic layer 15. For example, the fifth magnetic layer 15 is aligned with the second magnetic layer 12 and the fourth magnetic layer 14 in an XY plane (a plane perpendicular to the first direction). For example, the fifth magnetic layer 15 includes a material included in at least one of the second magnetic layer 12 and the fourth magnetic layer 14. In this example, the third multilayer body SB3 further includes a sixth magnetic layer 16 and a third intermediate layer 13i. The sixth magnetic layer 16 is arranged in parallel with the first magnetic layer 11 and the third magnetic layer 13 in the above-mentioned plane (XY plane). The third intermediate layer 13i is in the above-mentioned plane, and is juxtaposed with the first intermediate layer 11i and the second intermediate layer 12i. In the embodiment, at least one of the sixth magnetic layer 16 and the third intermediate layer 13i may be omitted. The control unit 70 is electrically connected to the first portion 31a, the second portion 31b, the third portion 32c and the fourth portion 32d, the plurality of first multilayer bodies SB1, and the plurality of second multilayer bodies SB2. In this figure, the control unit 70 is divided into two parts for the convenience of viewing the figure. In this example, a first switching element Sw1 is provided between each of the plurality of first laminated bodies SB1 and the driving circuit 75. A second switching element Sw2 is provided between each of the plurality of second laminated bodies SB2 and the driving circuit 75. A first transistor TR1 is provided between the first portion 31a and the driving circuit 75. A second transistor TR2 is provided between the second portion 31b and the driving circuit 75. A third transistor TR3 is provided between the third portion 32c and the driving circuit 75. A fourth transistor TR4 is provided between the fourth portion 32d and the driving circuit 75. In the first writing operation, the control unit 70 supplies the first writing current Iw1 from the first portion 31 a to the second portion 31 b to the first metal-containing layer 31 to form a first state. In the second writing operation, the control unit 70 supplies a second writing current Iw2 from the second portion 31b to the first portion 31a to the first metal-containing layer 31 to form a second state. The first resistance between the first magnetic layer 11 and one of the first portion 31a and the second portion 31b in the first state, and the first magnetic layer 11 and the first portion 31a and the second portion 31a of the second state The second resistance is different between the above. In the third write operation, the control unit 70 supplies a third write current Iw3 from the third portion 32c to the fourth portion 32d to the second metal-containing layer 32 to form a third state. In the fourth writing operation, the control unit 70 supplies a fourth writing current Iw4 from the fourth portion 32d to the third portion 32c to the second metal-containing layer 32 to form a fourth state. The third resistance between the third magnetic layer 13 and one of the third portion 32c and the fourth portion 32d in the third state, and the third magnetic layer 13 and the third portion 32c and the fourth portion 32d of the second state The fourth resistance is different between the above. For example, the selection of the plurality of first multilayer bodies SB1 is controlled by a voltage applied to the first magnetic layers 11 contained in the plurality of first multilayer bodies SB1. For example, the control unit 70 is electrically connected to the first magnetic layer 11 included in each of the plurality of first laminated bodies SB1. In the first and second writing operations, the control unit 70 sets the potential of the first magnetic layer 11 included in one of the plurality of first layered bodies SB1 to be included in the other of the plurality of first layered bodies SB1. The potential (for example, non-selective potential) of the first magnetic layer 11 is different from the potential (for example, selective potential). For example, the control unit 70 is electrically connected to the third magnetic layer 13 included in each of the plurality of second laminated bodies SB2. In the third and fourth writing operations, the control unit 70 sets the potential of the third magnetic layer 13 included in one of the plurality of second layered bodies SB2 to be included in the other of the plurality of second layered bodies SB2. The potential (for example, non-selective potential) of the third magnetic layer 13 is different from each other (for example, selective potential). In the magnetic memory device 151, for the first metal-containing layer 31 and the second metal-containing layer 32, at least a part of the structure described for the metal-containing layer 21 such as the magnetic memory devices 110 and 120 may be applied. In the magnetic memory device 151, at least a part of the structure described for the first laminated body SB1 such as the magnetic memory devices 110 and 120 may be applied to the plurality of first laminated bodies SB1 and the plurality of second laminated bodies SB2. In the magnetic memory device 151, at least a part of the configuration described for the magnetic memory devices 110 and 120 may be applied to the control unit 70, for example. The first metal-containing layer 31 and the plurality of first laminated bodies SB1 form one memory line (memory string). The first metal-containing layer 32 and the plurality of second laminated bodies SB2 form another memory row (memory string). A third layered body SB3 is provided between the memory portions. For example, the control unit 70 is electrically insulated from the fifth magnetic layer 15 of the third multilayer body SB3. The third layered body SB3 is not used as a memory portion. The third multilayer body SB3 functions as, for example, a dummy element. For example, the plurality of first layered bodies SB1 includes a layered body (layered body at the end portion) and a layered body (layered body at the center portion) located at the end portion of the plurality of first layered bodies SB1. There are other laminated bodies on both sides of the laminated body in the central part. One of the laminated bodies in the central part receives the action from other laminated bodies (for example, one laminated body) provided on both sides thereof. On the other hand, in the reference example in which the third laminated body SB3 is not provided, there is no other laminated body in one of the laminated bodies at the end. In the laminated body at the end, an effect from the laminated body provided on one side is generated. Therefore, in this reference example, the characteristics of the laminated body at the end portion of the plurality of first laminated bodies SB1 may be different from the laminated body at the center portion. At this time, in this embodiment, since the third multilayer body SB3 is provided, the characteristics of the multilayer body at the end portion are close to the characteristics of the multilayer body at the center portion. Thereby, for example, a stable memory operation can be performed. For example, the yield can be improved. For example, a stable operation can also be obtained when reducing the size of each of the plurality of laminated bodies SB0. Can increase memory density. In the embodiment, a distance between two (closest two) of the plurality of first laminated bodies SB1 is set to a first distance d1. Let the distance between two (the closest two) of the plurality of second laminated bodies SB2 be the second distance d2. The third distance d3 between one of the plurality of first laminated bodies SB1 and the third laminated body SB3 is, for example, substantially the first distance d1. For example, the third distance d3 is 0 of the first distance d1. 5 times or more and 2 times or less. The fourth distance d4 between one of the plurality of second layered bodies SB2 and the third layered body SB3 is substantially the second distance d2, for example. The fourth distance d4 is 0 of the second distance d2. 5 times or more and 2 times or less. Since the third laminated body SB3 is provided near one of the plurality of first laminated bodies SB1, for example, stable operation can be easily obtained in one of the plurality of first laminated bodies SB1. Since the third laminated body SB3 is provided near one of the plurality of second laminated bodies SB2, for example, stable operation is easily obtained in one of the plurality of second laminated bodies SB2. In this embodiment, the first metal-containing layer 31 and the second metal-containing layer 32 may be insulated from each other. The first metal-containing layer 31 and the second metal-containing layer 32 may be electrically connected to each other. In this example, a third metal-containing layer 33 is provided between the first metal-containing layer 31 and the second metal-containing layer 32. The third metal-containing layer 33 is also provided on the base member 20s. The third metal-containing layer 33 is provided between the second portion 31 b of the first metal-containing layer 31 and the third portion 32 c of the second metal-containing layer 32. For the third metal-containing layer 33, for example, a material of the first metal-containing layer 31 is used. In this example, a first insulating region 35a and a second insulating region 35b are provided. The first insulating region 35 a is provided between the second portion 31 b and the third metal-containing layer 33. The first insulating region 35 a is electrically insulated between the second portion 31 b and the third metal-containing layer 33. The second insulating region 35b is provided between the third portion 32c and the third metal-containing layer 33. The second insulating region 35b electrically insulates the third portion 32c from the third metal-containing layer 33. The first insulating region 35 a may include any one of an oxide of the first metal, a nitride of the first metal, and an oxynitride of the first metal contained in the first metal-containing layer 31. An example of a method of manufacturing the magnetic memory device 151 will be described below. 19 (a) and 19 (b) are schematic cross-sectional views illustrating a method of manufacturing a magnetic memory device according to a fifth embodiment. As shown in FIG. 19 (a), a metal-containing film 31FM is provided on the base member 20s. One part of the metal-containing film 31FM becomes the first metal-containing film, and the other part of the metal-containing film 31FM becomes the second metal-containing film 32. A plurality of first laminated bodies SB1 are provided on a portion of the metal-containing film 31FM. A plurality of second laminated bodies SB2 are provided on the other part of the metal-containing film 31FM. A third laminated body SB3 is provided on the metal-containing film 31FM. A mask MS1 is provided on the plurality of first multilayer bodies SB1 and the plurality of second multilayer bodies SB2. The third laminated body SB3 is not covered by the mask MS1. The metal-containing film 31FM has a portion located between the plurality of first multilayer bodies SB1 and the third multilayer body SB3 in a direction along the XY plane. This part is not covered by the mask MS1. The metal-containing film 31FM has a portion located between the plurality of second layered bodies SB2 and the third layered body SB3 in a direction along the XY plane. This part is not covered by the mask MS1. As shown in FIG. 19 (b), a processed body including a metal-containing film 31FM, a plurality of first laminated bodies SB1, a plurality of second laminated bodies SB2, and a third laminated body SB3 is processed. This process includes at least one of an etching process, an oxidation process, and an ion beam irradiation process. In the etching process, for example, a portion of the metal-containing film 31FM which is not covered by the mask MS1 is removed. In the oxidation treatment, for example, a part of the metal-containing film 31FM which is not covered by the mask MS1 is oxidized. The oxidized portion becomes an insulating portion. In the ion beam irradiation treatment, for example, a portion of the metal-containing film 31FM which is not covered by the mask MS1 is removed. In the ion beam irradiation treatment, for example, a compound may be generated from a portion of the metal-containing film 31FM that is not covered by the mask MS1. The compound includes at least any one of an oxide of a metal contained in the metal-containing film 31FM, a nitride of the metal, and an oxynitride of the metal. For example, when at least one of the oxidation treatment and the ion beam irradiation treatment has been performed, a compound is formed from the metal-containing film 31FM. This compound becomes the first insulating region 35a and the second insulating region 35b. The magnetic memory device 151 is formed by this process. You may change at least one part of the laminated body SB3 before and after the said process. If the sixth magnetic layer 16 exists before the above-mentioned processing, the sixth magnetic layer 16 may be changed by the above-mentioned processing. The sixth magnetic layer 16 may be removed. FIG. 20 is a schematic diagram illustrating another magnetic memory device according to the fifth embodiment. As shown in FIG. 20, the magnetic memory device 152 of this embodiment also includes a first metal-containing layer 31, a second metal-containing layer 32, a plurality of first laminated bodies SB1, a plurality of second laminated bodies SB2, and a third laminated body. SB3 and control section 70. An insulating portion 40 is provided in the magnetic memory device 152. The insulating portion 40 is provided between the plurality of first multilayer bodies SB1, the plurality of second multilayer bodies SB2, and the third multilayer body SB3. The insulating portion 40 is, for example, an interlayer insulating film. In the magnetic memory device 152, a first insulating region 40a and a second insulating region 40b are provided. The first insulating region 40a and the second insulating region 40b are made of the same material as that used for the insulating portion 40, for example. For example, in the process described with reference to FIG. 19 (b), for example, an etching process is performed to remove a part of the metal-containing film 31FM. A recessed portion is formed on the removed portion. A material that becomes the insulating portion 40 is buried in the recessed portion. Thereby, the first insulating region 40a and the second insulating region 40b are formed. In the magnetic memory device 152, for example, a stable memory operation can also be performed. For example, the yield can be improved. For example, it is easy to obtain a stable operation even when the size of each of the plurality of laminated bodies SB0 is reduced. Can increase memory density. According to the embodiment, a magnetic memory device capable of improving the memory density and a manufacturing method thereof can be provided. In the specification of this application, the “electrical connection state” includes a state in which a plurality of electrical conductors are physically connected and a current flows between the plurality of electrical conductors. "Electrically connected state" includes a state in which another conductor is inserted between a plurality of conductors and a current flows between the plurality of conductors. The “electrically connected state” includes a state in which an electric element (a switching element such as a transistor) is inserted between a plurality of electrical conductors and a current can flow between the plurality of electrical conductors. In the specification of this application, "vertical" and "parallel" include not only strict vertical and strict parallel, but also, for example, deviations in manufacturing steps, as long as they are substantially vertical and substantially parallel. The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, regarding the specific configuration of each element of the metal-containing layer, the magnetic layer, the intermediate layer, and the control section contained in the magnetic memory device, those skilled in the art can appropriately implement the present invention by appropriately selecting from well-known ranges, and obtain the same The effects are included in the scope of the present invention. In addition, any combination of any two or more requirements of each specific example within a technically feasible range is included in the scope of the present invention as long as it includes the gist of the present invention. In addition, all magnetic memory devices and methods for manufacturing the magnetic memory devices and methods for manufacturing the magnetic memory devices based on the embodiments of the present invention by appropriately designing and changing the same industry as long as they include the gist of the present invention It belongs to the scope of the present invention. In addition, in the ideological scope of the present invention, if it is a person skilled in the art, various changes and amendments can be conceived, and it should be understood that these changes and amendments also belong to the scope of the present invention. A number of embodiments of the present invention have been described above, but these embodiments are provided as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and variations are included in the scope or gist of the invention, and are included in the invention described in the scope of patent application and its equivalent. This application claims the priority of Japanese Patent Application No. 2016-154039 (filed on August 4, 2016), the entire contents of which are incorporated herein by reference.

11‧‧‧ 1st magnetic layer

11F‧‧‧The first magnetic film

11M‧‧‧1st magnetization

11i‧‧‧The first middle layer

11iF‧‧‧Interlayer

12‧‧‧ 2nd magnetic layer

12F‧‧‧Second magnetic film

12L‧‧‧face

12M‧‧‧Second magnetization

12U‧‧‧face

12cy‧‧‧length

12i‧‧‧2nd middle layer

12s‧‧‧side

12xL‧‧‧ length

12xU‧‧‧length

12y‧‧‧ length

12yL‧‧‧length

12yU‧‧‧length

13‧‧‧3rd magnetic layer

13M‧‧‧3rd magnetization

13i‧‧‧3rd middle layer

14‧‧‧ 4th magnetic layer

14L‧‧‧face

14M‧‧‧4th magnetization

14U‧‧‧face

14s‧‧‧side

14xL‧‧‧ length

14xU‧‧‧length

14y‧‧‧ length

14yL‧‧‧length

14yU‧‧‧length

15‧‧‧5th magnetic layer

16‧‧‧ 6th magnetic layer

20s‧‧‧base member

21, 21A‧‧‧ metal containing layer

21F‧‧‧ metal containing layer

21Fa‧‧‧ surface

21X‧‧‧metal containing layer

21a ～ 21e‧‧‧Parts 1 ～ 5

21cL‧‧‧face

21cU‧‧‧face

21ca‧‧‧The first non-overlapping area

21cay‧‧‧length

21cb‧‧‧The second non-overlapping area

21cby‧‧‧length

21cc‧‧‧1st overlapping area

21cct‧‧‧ thickness of 1st overlapping area

21cy‧‧‧length

21da‧‧‧The third non-overlapping area

21day‧‧‧length

21db‧‧‧4th non-overlapping area

21dby‧‧‧length

21dc‧‧‧ 2nd overlapping area

21dct‧‧‧2nd overlapping area thickness

21dy‧‧‧ length

21et‧‧‧thickness

21ey‧‧‧length

21sp‧‧‧spin

21yL‧‧‧length

22, 22A, 22X‧‧‧ electrodes

24‧‧‧ Conductive section

24a, 24b‧‧‧The first and second conductive layers

31‧‧‧ the first metal-containing layer

31FM‧‧‧Metal Containing Film

31a, 31b‧‧‧ Part 1, Part 2

31m‧‧‧The first interposition

32‧‧‧ 2nd metal containing layer

32c, 32d‧‧‧ Part 3, Part 4

32m‧‧‧The second interposition

33‧‧‧ 3rd metal containing layer

35a and 35b

40‧‧‧Insulation Department

40a, 40b ‧‧‧ the first and second insulation area

41‧‧‧compound layer

42a‧‧‧1st compound region

42b‧‧‧2nd compound area

43‧‧‧Compound film

44a‧‧‧The first insulating film

44b‧‧‧Second insulation film

70‧‧‧Control Department

71 ～ 73‧‧‧1st to 3rd circuits

75‧‧‧Drive circuit

110, 110A-110C, 110a-110h, 119, 120, 121, 122A-122C, 123a-123d, 142, 143, 151, 152

G1 ～ G3‧‧‧1st ～ 3rd gate

IB1‧‧‧ ion beam

In1, In2‧‧‧, 1st and 2nd insulation parts

Iw1 ～ Iw4‧‧‧1st to 4th write current

M1, M2‧‧‧1, 2nd mask

MS1‧‧‧Mask

Ma1‧‧‧Ruthenium film

Mb1‧‧‧Tungsten film

SB0‧‧‧Laminated body

SB1 ～ SB3‧‧‧The first to third layers

SBF‧‧‧Laminated Film

Sw1, Sw2‧‧‧ first, second switching elements

T1, T2‧‧‧‧Slots 1, 2

TR1 ～ TR4‧‧‧1st ~ 4th transistors

Tp2, Tq2‧‧‧Slots 1, 2

d1 ～ d4‧‧‧1st ～ 4th distance

t12‧‧‧thickness

t14‧‧‧thickness

wTp2‧‧‧Width

wTq2‧‧‧Width

X‧‧‧ direction

Y‧‧‧ direction

Z‧‧‧ direction

1 (a) to 1 (d) are schematic diagrams illustrating a magnetic memory device according to the first embodiment. 2 (a) and 2 (b) are schematic cross-sectional views illustrating the operation of a magnetic memory device. 3 (a) and 3 (b) are schematic diagrams illustrating a magnetic memory device according to the first embodiment. 4 (a) to 4 (c) are schematic cross-sectional views illustrating another magnetic memory device according to the first embodiment. 5 (a) to 5 (h) are schematic cross-sectional views illustrating another magnetic memory device according to the first embodiment. 6 (a) to 6 (d) are cross-sectional views illustrating a magnetic memory device according to a second embodiment. FIG. 7 is a schematic plan view illustrating a magnetic memory device according to a second embodiment. 8 (a) and 8 (b) are schematic cross-sectional views illustrating a magnetic memory device according to a second embodiment. 9 (a) to 9 (c) are schematic cross-sectional views illustrating another magnetic memory device according to the second embodiment. 10 (a) to 10 (d) are schematic plan views illustrating another magnetic memory device according to the second embodiment. FIG. 11 is a flowchart illustrating a method of manufacturing the magnetic memory device according to the third embodiment. 12 (a) to 12 (d) are schematic views illustrating a method of manufacturing a magnetic memory device according to a third embodiment. 13 (a) to 13 (e) are schematic views illustrating a method of manufacturing a magnetic memory device according to a third embodiment. 14 (a) to 14 (c) are schematic views illustrating a method of manufacturing a magnetic memory device according to a third embodiment. 15 (a) and 15 (b) are schematic diagrams illustrating a method of manufacturing a magnetic memory device according to a third embodiment. FIG. 16 is a schematic cross-sectional view illustrating a magnetic memory device according to a fourth embodiment. FIG. 17 is a schematic diagram illustrating another magnetic memory device according to the fourth embodiment. FIG. 18 is a schematic diagram illustrating a magnetic memory device according to a fifth embodiment. 19 (a) and 19 (b) are schematic cross-sectional views illustrating a method of manufacturing a magnetic memory device according to a fifth embodiment. FIG. 20 is a schematic diagram illustrating another magnetic memory device according to the fifth embodiment.

Claims (19)

A magnetic memory device comprising: a metal-containing layer including: a first part, a second part, a third part between the first part and the second part, and between the third part and the second part The fourth part, and the fifth part between the third part and the fourth part; the first magnetic layer is in the first direction crossing the second direction from the first part to the second part Is separated from the above-mentioned third part; a second magnetic layer is provided between one part of the above-mentioned third part and the above-mentioned first magnetic layer; a first non-magnetic intermediate layer including the above-mentioned first magnetic layer and A portion between the second magnetic layer; a third magnetic layer separated from the fourth portion in the first direction; a fourth magnetic layer provided between a portion of the fourth portion and the third magnetic layer Between; a non-magnetic second intermediate layer including a portion provided between the third magnetic layer and the fourth magnetic layer; and a control portion electrically connected to the first portion and the second portion; and The length of the third part along the third direction crossing the first direction and the second direction Longer than the length of the second magnetic layer along the third direction, the length of the third portion along the third direction, and longer than the length of the fifth portion along the third direction; The control unit performs a first writing operation that supplies a first writing current from the first portion to the second portion, and a second writing operation that supplies a first writing current from the second portion to the first portion. A second write current; a first resistance between the first magnetic layer and the first portion after the first write operation, and a first resistance between the first magnetic layer and the first portion after the second write operation The second resistance is different between them. For example, the magnetic memory device of claim 1, wherein the length of the fourth part in the third direction is longer than the length of the fourth magnetic layer in the third direction, and the length of the fourth part is longer than the length of the fourth magnetic layer. The length of the above part 5 is long. For example, the magnetic memory device of claim 1 or 2, wherein the third part includes: a first overlapping region that overlaps the second magnetic layer in the first direction; and a first non-overlapping region that is in the first Does not overlap with the second magnetic layer in the direction; the thickness of at least a part of the first non-overlapping region along the first direction is thinner than the thickness of the first overlapping region along the first direction of the first overlapping region . For example, the magnetic memory device of claim 3, wherein the third portion further includes a second non-overlapping area, the second non-overlapping area does not overlap with the second magnetic layer in the first direction, and the first overlapping area is in contact with The third direction intersecting the first direction and the second direction is located between the first non-overlapping area and the second non-overlapping area, and at least a part of the second non-overlapping area is along the first direction. The thickness is thinner than the thickness of the first overlapping region. The magnetic memory device of claim 4, wherein the total length of the first non-overlapping area along the third direction and the length of the second non-overlapping area along the third direction are relative to the first overlapping area. The first ratio of thickness is longer than the length of the second magnetic layer facing the metal-containing layer along the second direction, and the second magnetic layer facing the first intermediate layer. The ratio of the absolute value of the difference in length along the second direction to the thickness of the second magnetic layer along the first direction of the second magnetic layer. For example, the magnetic memory device of claim 1 or 2, wherein the third portion includes a first overlapping area overlapping the second magnetic layer in the first direction, and a thickness of the fifth portion along the first direction, The thickness of the first overlapping region along the first direction is thinner than the thickness of the first overlapping region. A magnetic memory device includes: a metal-containing layer including a first portion, a second portion, and a third portion between the first portion and the second portion; and a first magnetic layer between the first and second portions. One part is separated from the third part in the first direction crossing the second direction of the second part; the second magnetic layer is provided between one part of the third part and the first magnetic layer; The first magnetic intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer; and a control portion electrically connected to the first and second portions; and the third portion The length along the third direction crossing the first direction and the second direction is longer than the length along the third direction of the second magnetic layer; the length of the third part along the third direction The length is longer than the length along the third direction between the part between the third part and the second part. The control unit performs a first writing operation, which is supplied from the first part to the second part. Part of the first write current and the second write operation are supplied from the second part The second write current to the first part; the first resistance between the first magnetic layer and one of the first part and the second part after the first write operation, and the second write The second resistance between the first magnetic layer and the one of the first part and the second part after the operation is different. A magnetic memory device includes: a metal-containing layer including a first portion, a second portion, and a third portion between the first portion and the second portion; and a first magnetic layer between the first and second portions. One part is separated from the third part in the first direction crossing the second direction of the second part; the second magnetic layer is provided between one part of the third part and the first magnetic layer; The first magnetic intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer; and a control portion electrically connected to the first and second portions; and the third portion Including: a first overlapping region that overlaps the second magnetic layer in the first direction; and a first non-overlapping region that does not overlap the second magnetic layer in the first direction; the first non-overlapping region The thickness of at least a part of the area along the first direction is thinner than the thickness of the first overlapping area of the first overlapping area along the first direction; the control unit performs the first writing operation, which is supplied from The first part writes a current to the first part of the second part, and 2 writing operation, which supplies a second writing current from the second portion to the first portion; a first resistance between the first magnetic layer and the first portion after the first writing operation, and The second resistance between the first magnetic layer and the first portion after the second write operation is different. For example, the magnetic memory device of claim 8, wherein the third portion further includes a second non-overlapping area, the second non-overlapping area does not overlap with the second magnetic layer in the first direction, and the first overlapping area is in contact with The third direction intersecting the first direction and the second direction is located between the first non-overlapping area and the second non-overlapping area, and at least a part of the second non-overlapping area is along the first direction. The thickness is thinner than the thickness of the first overlapping region. The magnetic memory device according to claim 9, wherein the sum of the length of the first non-overlapping area along the third direction and the length of the second non-overlapping area along the third direction are relative to the first overlapping area. The first ratio of thickness is higher than the length along the second direction of the surface of the second magnetic layer facing the metal-containing layer, and the surface of the second magnetic layer and the surface of the first intermediate layer object. The ratio of the absolute value of the difference along the second direction to the thickness of the second magnetic layer along the first direction. The magnetic memory device according to claim 10, wherein the first ratio is higher than the length along the third direction of the surface facing the metal-containing layer of the second magnetic layer and the sum of the second magnetic layer. A ratio of an absolute value of a difference between the surfaces of the first intermediate layer object along the third direction to a thickness of the second magnetic layer along the first direction. The magnetic memory device according to any one of claims 8 to 11, further comprising: a third magnetic layer; a fourth magnetic layer; and a nonmagnetic second intermediate layer; and the metal-containing layer further includes: the above-mentioned part 3 The fourth part between the second part and the fifth part between the third part and the fourth part; the third magnetic layer is separated from the fourth part in the first direction, and the first 4 The magnetic layer is provided between a portion of the fourth magnetic layer and the third magnetic layer, the second intermediate layer includes a portion provided between the third magnetic layer and the fourth magnetic layer, and an edge of the fifth portion The thickness in the first direction is smaller than the thickness in the first overlapping region. For example, the magnetic memory device of claim 1 or 2, wherein the control unit is further electrically connected to the first magnetic layer and the third magnetic layer, and the control unit is configured to connect the first magnetic layer in the first writing operation. The potential is set to a potential different from the potential of the third magnetic layer. For example, the magnetic memory device according to claim 1 or 2, further comprising a compound region containing a metal contained in the second magnetic layer, the compound region being between the second magnetic layer and the fourth magnetic layer, A direction in which the second magnetic layer is connected to the fourth magnetic layer. The magnetic memory device according to claim 1 or 2, wherein the crystal structure of the third part is different from the crystal structure of at least a part of the fifth part. A magnetic memory device includes: a first metal-containing layer including a first portion, a second portion, and a first intervening portion provided between the first portion and the second portion; and a second metal-containing layer , Which includes a third part, a fourth part, and a second intervening part provided between the third part and the fourth part, and the second part is provided between the first part and the fourth part The third part is provided between the second part and the fourth part; a plurality of first laminated bodies, the plurality of first laminated systems are arranged along the first metal-containing layer, and the plurality of first laminated layers One of the body includes a first magnetic layer, a second magnetic layer, and a first intermediate layer; the first magnetic layer intersects with the second direction from the first portion to the second direction of the second portion, and The first interposed portion is separated; the second magnetic layer is provided between the first interposed portion and the first magnetic layer; the first intermediate layer includes the first magnetic layer and the second magnetic layer. Between the two, and non-magnetic; a plurality of second laminated bodies, the above-mentioned plurality of second laminated systems Arranged along the second metal-containing layer, one of the plurality of second laminated bodies includes a third magnetic layer, a fourth magnetic layer, and a second intermediate layer; the third magnetic layer is in the first direction and the above The second interposed portion is separated; the fourth magnetic layer is provided between the second interposed portion and the third magnetic layer; the second intermediate layer includes a portion provided between the third magnetic layer and the fourth magnetic layer. And a non-magnetic part; a third laminated body provided between the plurality of first laminated bodies and the plurality of second laminated bodies, and including a fifth magnetic layer; and a control section, which is in communication with the first 1 to the fourth part, the plurality of first laminated bodies, and the plurality of second laminated bodies are electrically connected; and the control unit performs a first writing operation, which is supplied from the first part to the first The first writing current in the second part and the second writing operation supply the second writing current from the second part to the first part; the first magnetic layer and the above after the first writing operation The first resistance between the first part and one of the above second parts is higher than that after the second writing operation. The second resistance between the first magnetic layer and the one of the first part and the second part is different; the control unit is configured to perform a third write operation, which is supplied from the third part to the fourth Part of the third write current and the fourth write operation, which supplies the fourth write current from the fourth part to the third part; the third magnetic layer and the third write current after the third write operation The third resistance between part 3 and one of the fourth part, and the fourth resistance between the third magnetic layer after the second writing operation and the one of the third part and the fourth part. The resistance is different. The magnetic memory device according to claim 16, further comprising: a third metal-containing layer provided between the second portion and the third portion; and a first insulating region provided between the second portion and the third portion. Between the metal-containing layers; and a second insulating region provided between the third portion and the third metal-containing layer. For example, the magnetic memory device of claim 16 or 17, wherein the control unit is further electrically connected to the first magnetic layer of each of the plurality of first laminated bodies, and the control unit performs the first writing operation in the first writing operation. The potential of the first magnetic layer contained in the one of the plurality of first multilayers is set to a potential different from the potential of the first magnetic layer contained in the other of the plurality of first multilayers. A method for manufacturing a magnetic memory device is to form a laminated film on a metal-containing film provided on a base member. The laminated film includes: a first magnetic film; and a second magnetic film provided on the first magnetic film. And the metal-containing film; and a non-magnetic intermediate film provided between the first magnetic film and the second magnetic film; a plurality of first grooves are formed, and the plurality of first grooves are arranged opposite to each other In the second direction crossing the first direction perpendicular to the surface of the metal containing film, and extending in the third direction crossing the first direction and the second direction to reach the metal containing film; in the first groove Forming a first insulating portion; removing a portion of the laminated film and a portion of the first insulating portion after forming the first insulating portion, and forming a plurality of second grooves extending in the second direction; the plurality of first grooves One of the two grooves includes a first groove region overlapping the laminated film in the third direction, and a second groove region overlapping the first insulating portion in the third direction. The edge of the first groove region is included. The width in the third direction above, Said second narrow groove area along the third direction; and the metal exposed by the plurality of first grooves 2 containing film is removed; and to the second plurality of slots forming the second insulating portion.