TWI652223B - Apparatus and method for producing a nanostructure composed of carbon - Google Patents

Apparatus and method for producing a nanostructure composed of carbon Download PDF

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TWI652223B
TWI652223B TW103140305A TW103140305A TWI652223B TW I652223 B TWI652223 B TW I652223B TW 103140305 A TW103140305 A TW 103140305A TW 103140305 A TW103140305 A TW 103140305A TW I652223 B TWI652223 B TW I652223B
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plasma
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艾恩 布萊克柏恩
肯尼斯 泰歐
布萊恩 魯
海那林 路比辛
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艾思強公司
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    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract

本發明係關於一種裝置,用於製造由碳構成之奈米結構,諸如單層、多層薄片結構、小管或纖維,該裝置具有一進氣元件(2),該進氣元件(2)具有被殼體壁板(3、3'、3")封圍之一殼體空腔(5),一供氣管(6)通入該殼體空腔(5)內,一氣態之、尤其含碳之起始材料經由供氣管(6)可被饋入至該殼體空腔(5)內,該裝置具有具備至少部分配置在該殼體空腔(5)內之組件(8、9、10)的一電漿產生器,該電漿產生器具有至少一個可經施加電壓之電漿電極(9),以藉由點燃一電漿向該氣態之起始材料施加能量並且因此將其轉換成一氣態之中間產物,且該裝置具有具備複數個排氣口(7)之一排氣面(4),該氣態之中間產物可經由該排氣口(7)自該殼體空腔(5)中排出。提供用於輔助該轉換之一氣體加熱單元(11),其配置在該等組件(8、9、10)之下游。 The present invention relates to a device for manufacturing a nanostructure made of carbon, such as a single layer, a multilayer sheet structure, a small tube, or a fiber. The device has an air inlet element (2), which is A shell wall (3, 3 ', 3 ") encloses a shell cavity (5), and an air supply pipe (6) leads into the shell cavity (5), a gaseous, especially carbon The starting material can be fed into the housing cavity (5) through the air supply pipe (6), and the device has a component (8, 9, 10) at least partially disposed in the housing cavity (5). ) A plasma generator having at least one plasma electrode (9) to which a voltage can be applied to apply energy to the gaseous starting material by igniting a plasma and thereby convert it into a Gaseous intermediate product, and the device has an exhaust surface (4) having a plurality of exhaust ports (7), and the gaseous intermediate product can pass from the cavity (5) through the exhaust port (7) A gas heating unit (11) for assisting the conversion is provided downstream of the components (8, 9, 10).

Description

製造由碳構成之奈米結構之裝置及方法 Device and method for manufacturing carbon nanostructure

本發明首先係關於一種裝置,用於製造由碳構成之奈米結構,諸如單層、多層結構或小管或纖維,該裝置具有一進氣元件,該進氣元件具有被殼體壁板封圍之一殼體空腔,一供氣管通入該殼體空腔內,例如含有氣態之、含碳之起始材料的氣體混合物經由該供氣管可被輸送至該殼體空腔內,該裝置具有配置在該殼體空腔內之一電漿產生器,該電漿產生器具有至少一個可經施加電壓之電漿電極,用於藉由施加能量而使氣態之起始材料轉換成氣態之中間產物,且該裝置具有具備大量排氣口(7)之排氣面,氣態之中間產物能夠經由排氣口(7)自該殼體空腔中排出。 The invention first relates to a device for manufacturing a nanostructure made of carbon, such as a single layer, a multilayer structure or a small tube or fiber. The device has an air inlet element which is enclosed by a shell wall A casing cavity, and a gas supply pipe leading into the casing cavity, for example, a gas mixture containing gaseous and carbon-containing starting materials can be transported into the casing cavity through the gas supply pipe, the device There is a plasma generator disposed in the cavity of the casing, the plasma generator has at least one plasma electrode capable of applying a voltage for converting a gaseous starting material into a gaseous state by applying energy. Intermediate products, and the device has an exhaust surface with a large number of exhaust ports (7), and the gaseous intermediate products can be discharged from the cavity of the housing through the exhaust ports (7).

此外本發明另外係關於一種在使用此裝置之情況下製造由碳構成之奈米結構之方法。 In addition, the present invention relates to a method for manufacturing a nanostructure made of carbon using the device.

碳可以不同之晶體結構沈積。舉例而言,以金剛石結構之形式,作為單層、多層結構(多層薄片)(諸如,石墨烯),作為小管(諸如,「碳奈米管」)或作為富勒烯或作為纖維。使用CVD(化學氣相沈積)裝置,用於沈積出這種碳結構、尤其奈米結構,其在至少一個維度具有自不足一奈米到幾百奈米之結構尺寸。在此,含碳之起始材料(例如,甲烷或乙炔)連同運載氣體(例如,氬氣或氫氣)被導入CVD反 應器之處理室內。已知,熱力地或借助電漿活化或解離所導入之含碳之起始材料。舉例而言,US 8,398,927 B2描述了一種電漿增強之CVD(PE-CVD),並且US 2006/0185595 A1描述了一種熱絲CVD(HF-CVD)。在PE-CVD之情況下,在進氣元件之內部點燃電漿。為此,該裝置具有電漿電極,電漿電極可被施加電壓。由此產生自由基,該自由基可經由進氣元件之排氣口進入處理室,其在那裏在形成奈米結構之情況下沈積在配置在加熱元件上的基板上。在HF-CVD之情況下,使用熱絲在進氣元件之內部亦或外部加熱含碳之起始材料。在HF-CVD之情況下,亦可直接在基板之上方點燃電漿,使用電漿產生自由基。然而,直接在基板上方點燃電漿係有缺點的,因為在電漿中形成高能離子,該等高能離子對基板具有蝕刻效應。 Carbon can be deposited in different crystal structures. For example, in the form of a diamond structure, as a single layer, a multilayer structure (multilayer sheet) (such as graphene), as a small tube (such as "carbon nanotube") or as fullerene or as a fiber. A CVD (Chemical Vapor Deposition) device is used to deposit such a carbon structure, especially a nanostructure, which has a structure size from less than one nanometer to several hundred nanometers in at least one dimension. Here, a carbon-containing starting material (e.g., methane or acetylene) is introduced into a CVD reaction with a carrier gas (e.g., argon or hydrogen). Processing chamber. It is known to activate or dissociate the introduced carbon-containing starting material thermally or by means of a plasma. For example, US 8,398,927 B2 describes a plasma enhanced CVD (PE-CVD), and US 2006/0185595 A1 describes a hot-wire CVD (HF-CVD). In the case of PE-CVD, the plasma is ignited inside the gas inlet element. For this purpose, the device has a plasma electrode which can be applied with a voltage. As a result, free radicals are generated, which can enter the processing chamber via the exhaust port of the air-intake element, where they are deposited on a substrate arranged on the heating element with the formation of a nanostructure. In the case of HF-CVD, a hot wire is used to heat the carbon-containing starting material inside or outside the air intake element. In the case of HF-CVD, it is also possible to ignite the plasma directly above the substrate and use the plasma to generate free radicals. However, igniting the plasma directly above the substrate has disadvantages because high-energy ions are formed in the plasma, and these high-energy ions have an etching effect on the substrate.

自US 6,499,425或US 6,161,499亦已知使用電漿沈積含碳結構之裝置。 Also known from US 6,499,425 or US 6,161,499 are devices using plasma to deposit carbon-containing structures.

本發明係基於以下目標:改良已知之裝置或方法,以便改良由碳構成之奈米結構之製造。 The present invention is based on the objective of improving a known device or method in order to improve the manufacture of a nanostructure made of carbon.

該目標係藉由在技術方案中指定之發明來達成。根據本發明,在進氣元件之內部點燃電漿。此外,使用氣體加熱裝置,用於結合或解離氣態之起始材料。一定程度上利用了HF-CVD及PE-CVD之優點,以便將氣態起始材料之電漿解離及熱活化/反應或氣體之熱處理相結合,在氣相階段中形成反應產物。較佳使用含碳之起始材料導致形成聚合之及/或芳香族之組分。尤其形成聚合之及/或芳香族之自由基。較佳電漿產生器具有接地之保護電極,使用該等保護電極可中和或捕捉在解離過程中形成之離子。使用保護電極亦會導致離子之能量降低。根據本發明之進氣元件或根據本發明使用之氣體分配器較佳實施為「蓮蓬頭」。歸因於使用電漿及熱輸送兩者產生自由基。其可使 用複數個柵格形狀之板件產生,其中可施加電壓之電漿電極及在電漿電極上游及/或下游配置之保護電極形成為具有複數個孔之板件。板件之孔可彼此錯位地配置,由此產生改良之氣體混合。氣體加熱裝置亦藉由柵格形狀之結構形成,但其具有兩個電極,用於引導由板件加熱之電流通過板件。但氣體加熱裝置亦可按迴形形成,然而,其可形成為線圈並且具有兩個或兩個以上電極,以便能夠使用電流加熱該加熱元件。全部之板件橫向於氣體之流動方向設置並且較佳在進氣元件之整個橫截面上延伸。氣體加熱裝置尤其為橫向於流動方向配置之扁平物件。氣體加熱裝置可配置在進氣元件之內部、在排氣面區域內或直接配置在排氣面之下游。氣體加熱裝置之延伸方向橫向於氣流之流動方向。板件具有均勻配置之孔。該等孔可具有矩形、圓形或長形之橫截面。氣體加熱裝置能夠對穿過之氣體加熱,使得提高氣體溫度。 This goal is achieved by the invention specified in the technical solution. According to the invention, the plasma is ignited inside the air intake element. In addition, a gas heating device is used for binding or dissociating a gaseous starting material. To a certain extent, the advantages of HF-CVD and PE-CVD are used in order to combine plasma dissociation of gaseous starting materials and thermal activation / reaction or heat treatment of gases to form reaction products in the gas phase. The use of carbon-containing starting materials preferably results in the formation of polymeric and / or aromatic components. In particular, polymerized and / or aromatic free radicals are formed. It is preferred that the plasma generator has a grounded protective electrode, which can be used to neutralize or capture ions formed during the dissociation process. The use of a guard electrode also causes a reduction in the energy of the ions. The air intake element according to the invention or the gas distributor used according to the invention is preferably implemented as a "shower head". Attributed to the use of both plasma and heat transfer to generate free radicals. Which enables It is produced by a plurality of grid-shaped plates, in which a plasma electrode to which a voltage can be applied and a protective electrode arranged upstream and / or downstream of the plasma electrode are formed into a plate having a plurality of holes. The holes of the plates can be arranged offset from one another, resulting in an improved gas mixture. The gas heating device is also formed by a grid-shaped structure, but it has two electrodes for guiding a current heated by the plate through the plate. However, the gas heating device may also be formed in a round shape, however, it may be formed as a coil and have two or more electrodes so that the heating element can be heated using an electric current. All the plates are arranged transversely to the flow direction of the gas and preferably extend over the entire cross section of the air intake element. The gas heating device is especially a flat object arranged transversely to the flow direction. The gas heating device can be arranged inside the intake element, in the area of the exhaust surface or directly downstream of the exhaust surface. The extending direction of the gas heating device is transverse to the flow direction of the air flow. The plate has uniformly arranged holes. The holes may have a rectangular, circular or elongated cross section. The gas heating device can heat the gas passing therethrough, so that the temperature of the gas is increased.

在第一變型方案中,電漿電極可同時形成加熱元件。在此情況下,不僅可向電漿電極施加高電壓,用以產生電漿。亦可引導電流經過板件,該電流將板件加熱,使得使用此被加熱之板件不僅製造電漿,且亦加熱氣體。因此在相同之位置發生電漿活化及熱活化。 In a first variant, the plasma electrode can form a heating element at the same time. In this case, it is not only possible to apply a high voltage to the plasma electrode to generate a plasma. It is also possible to direct an electric current through the board, which heats the board so that using the heated board not only makes the plasma, but also heats the gas. Therefore, plasma activation and thermal activation occur at the same location.

在本發明之第二變型方案中,電漿電極與加熱單元在空間上被隔開。加熱單元可配置在電漿產生器之下游。形成電極之板件可由金屬、尤其高反射性之金屬製成。排氣面之面向殼體空腔之壁板亦可形成為熱反射的。預先施加電之電漿電極可配置在兩個接地之保護電極之間。以此方式,可保護殼體空腔之位於外部之區域免受離子轟擊。 In a second variation of the present invention, the plasma electrode and the heating unit are spatially separated. The heating unit may be arranged downstream of the plasma generator. The plates forming the electrodes can be made of metal, especially highly reflective metal. The wall plate of the exhaust surface facing the cavity of the housing may also be formed as heat reflecting. A pre-applied plasma electrode can be placed between two grounded protective electrodes. In this way, the outer region of the housing cavity can be protected from ion bombardment.

在第三變型方案中,氣體加熱裝置直接位於排氣面之下游。具有孔之板件位於氣體加熱裝置之下游,該板件由絕緣材料構成。排氣面及進氣元件之側壁由導電材料構成並且如兩個在進氣元件之內部配置在電漿電極下游之屏蔽板般被接地。由絕緣材料製成之孔板可位於在電漿電極上游配置的接地之保護電極之間。 In a third variant, the gas heating device is located directly downstream of the exhaust surface. A plate with a hole is located downstream of the gas heating device and is made of an insulating material. The exhaust surface and the side wall of the air intake element are made of a conductive material and are grounded like two shield plates arranged downstream of the plasma electrode inside the air intake element. An orifice plate made of an insulating material may be located between the grounded protective electrodes disposed upstream of the plasma electrode.

在本發明之第四變型方案中,進氣元件由導電之空心體形成。該空心體具有圓柱體形狀及圓形平面輪廓。圓柱體之上端面在其內側上面襯有絕緣板。絕緣板亦可或多或少形成進氣元件之蓋板。絕緣板在其內側上面承載可施加交流電壓或直流電壓(尤其,高壓)之電漿電極,在此例示性實施例中,氣體不會流過該電漿電極。兩個彼此平行並且與進氣元件之端壁平行延伸的、由導電材料製造且具有排氣口之板件位於進氣元件之殼體空腔之內部。使用固持桿將板件緊固在進氣元件之蓋板上並且經由固持桿接地。在此情況下,固持桿穿過電漿電極及與電漿電極貼靠之絕緣體中之孔嚙合。氣體加熱單元位於進氣元件之外部的此處。加熱單元由扁平之金屬板條形成,該金屬板條結構化於平行於氣體出口平面延伸之平面內。金屬板條可呈迴形延伸。然而,其亦可呈螺旋形地圍繞圓盤狀之加熱板之中心延伸。在此例示性實施例中,處理室之蓋板由具有通氣口之絕緣板形成。此板件亦具有圓盤形狀。板件直接位於氣體加熱面之下游。該板件由絕緣材料製成。基座位於該板件之下面,該基座可由加熱單元加熱或藉由冷卻單元冷卻。基板位於可調溫之基座上。 In a fourth variant of the invention, the air inlet element is formed by a conductive hollow body. The hollow body has a cylindrical shape and a circular planar outline. The upper end surface of the cylinder is lined with an insulating plate on its inner side. The insulating plate can also form the cover of the air intake element more or less. The insulating plate carries a plasma electrode on its inner side, to which an AC voltage or a DC voltage (especially, a high voltage) can be applied. In this exemplary embodiment, gas does not flow through the plasma electrode. Two plates, which are parallel to each other and extend parallel to the end wall of the air intake element, are made of a conductive material and have an exhaust port, and are located inside the cavity of the housing of the air intake element. The plate is fastened to the cover plate of the air intake element using a holding rod and grounded via the holding rod. In this case, the holding rod passes through the plasma electrode and engages with a hole in the insulator abutting the plasma electrode. The gas heating unit is located here outside the air intake element. The heating unit is formed by a flat metal slat structured in a plane extending parallel to the plane of the gas outlet. The metal slats can extend in a round shape. However, it can also spirally extend around the center of the disc-shaped heating plate. In this exemplary embodiment, the cover plate of the processing chamber is formed of an insulating plate having a vent. This plate also has a disc shape. The plate is located directly downstream of the gas heating surface. The plate is made of insulating material. The base is located under the plate, and the base can be heated by a heating unit or cooled by a cooling unit. The substrate is located on a temperature-adjustable base.

根據本發明之進氣元件為CVD反應器之部分,該CVD反應器具有氣密之反應器殼體,進氣元件位於該反應器殼體內。進氣元件在其下側具有排氣面,該排氣面具有複數個排氣口,使得進氣元件形成蓮蓬頭形狀。使用進氣元件進行氣體分配。處理室位於進氣元件之下面,處理室之底部由可加熱之基座實施。至少一個基板位於基座上,該基板可由玻璃構成。在基板上沈積碳奈米結構,例如,石墨烯或「碳奈米管」。基板亦可為晶圓或薄膜。其亦可由玻璃、石英、金屬、陶瓷或聚合物及矽製成。 The gas inlet element according to the present invention is part of a CVD reactor, which has a gas-tight reactor housing, and the gas inlet element is located in the reactor housing. The air intake element has an exhaust surface on its lower side, and the exhaust surface has a plurality of exhaust ports so that the air intake element has a shower head shape. Gas distribution using air intake elements. The processing chamber is located below the air intake element, and the bottom of the processing chamber is implemented by a heatable base. At least one substrate is located on the base, and the substrate may be composed of glass. Carbon nanostructures, such as graphene or "carbon nanotubes", are deposited on a substrate. The substrate may also be a wafer or a thin film. It can also be made of glass, quartz, metal, ceramic or polymer and silicon.

為了執行方法,氣體混合物經由供氣管被饋入到進氣元件內。氣體混合物可為運載氣體,例如,氫氣或氬氣。此外,可經由進氣元 件饋入碳載體,例如,甲烷或乙炔。氣態起始材料在進氣元件之反應室內經化學轉換。詳言之,含碳起始材料之轉換發生。此(例如)藉由向甲烷施加熱量或藉由電漿來執行。在此情況下,產生中間產物,諸如,原子之或離子化之自由基。在此情況下,此等可為芳香族之或聚合之中間產物。此等含有碳原子之中間產物使用運載氣體被引入穿過排氣口進入處理室,其在處理室處沈積於基板上。為此,將基板加熱至300℃與1200℃之間的溫度。含碳之起始材料之氣體饋入可脈衝式地發生。然而,亦可規定,連續地將含碳之起始材料饋入至進氣元件內。可連續地藉由交流電壓或藉由直流電壓產生電漿。然而,亦可僅脈衝式地點燃電漿。為了產生電漿,將電漿電極置於300V至1500V之電壓。若電漿電極同時為加熱元件,則加熱電壓具有對應高之電位,此係由於電漿電源與加熱電源相互連接。亦可使用電漿產生器及氣體加熱單元來產生清潔氣體。在塗佈步驟之前或之後進行清潔步驟,在此期間,將中性之氣體轉換成清潔之自由基,例如,在進氣元件內部。使用此等清潔之自由基,可移除在處理室中或在進氣元件之殼體空腔中累積之粒子。典型之方法可具有以下處理步驟中之一者:a)氧化步驟,其中使用根據本發明之進氣元件形成氧原子或離子,用來氧化基板或在基板上沈積之層;b)還原步驟,其中將諸如氫或氨之還原劑轉換成原子、離子或自由基,用來還原基板或在基板上沈積之層;c)生長步驟,其中氣體混合物(其包含含碳之成分,例如,甲烷、乙烯或乙炔)被轉換成原子、離子、芳香族之自由基或聚合之自由基,用來沈積碳奈米材料;d)後處理步驟,其中使用還原之或摻雜之氣體。 To perform the method, a gas mixture is fed into the air intake element via a gas supply pipe. The gas mixture may be a carrier gas, such as hydrogen or argon. In addition, The element is fed into a carbon support, such as methane or acetylene. The gaseous starting material is chemically converted in the reaction chamber of the intake element. In particular, conversion of the carbon-containing starting material occurs. This is performed, for example, by applying heat to methane or by plasma. In this case, intermediate products such as atomic or ionized free radicals are produced. In this case, these may be aromatic or polymeric intermediates. These carbon atom-containing intermediate products are introduced through the exhaust port into the processing chamber using a carrier gas, which is deposited on the substrate at the processing chamber. To this end, the substrate is heated to a temperature between 300 ° C and 1200 ° C. The gas feed of the carbon-containing starting material can occur in pulses. However, it can also be provided that a carbon-containing starting material is continuously fed into the air intake element. Plasma can be generated continuously by AC voltage or by DC voltage. However, it is also possible to ignite the plasma only in pulses. To generate a plasma, the plasma electrode is placed at a voltage between 300V and 1500V. If the plasma electrode is a heating element at the same time, the heating voltage has a correspondingly high potential, because the plasma power source and the heating power source are connected to each other. It is also possible to use a plasma generator and a gas heating unit to generate clean gas. A cleaning step is performed before or after the coating step, during which a neutral gas is converted into a clean free radical, for example, inside the air intake element. Using these clean free radicals, particles accumulated in the processing chamber or in the housing cavity of the air intake element can be removed. A typical method may have one of the following processing steps: a) an oxidation step in which oxygen atoms or ions are formed using the air-intake element according to the present invention to oxidize a substrate or a layer deposited on the substrate; b) a reduction step, Wherein a reducing agent such as hydrogen or ammonia is converted into atoms, ions or radicals for reducing a substrate or a layer deposited on the substrate; c) a growth step in which a gas mixture (which contains a carbon-containing component such as methane, Ethylene or acetylene) is converted into atomic, ionic, aromatic free radicals or polymerized free radicals to deposit carbon nanomaterials; d) a post-treatment step in which a reduced or doped gas is used.

1‧‧‧反應器殼體 1‧‧‧reactor housing

2‧‧‧進氣元件/蓮蓬頭 2‧‧‧Air intake element / shower head

3‧‧‧壁板 3‧‧‧ siding

3'‧‧‧壁板 3'‧‧‧ siding

3"‧‧‧壁板 3 "‧‧‧Siding

4‧‧‧排氣面 4‧‧‧ exhaust surface

5‧‧‧殼體空腔 5‧‧‧shell cavity

6‧‧‧供氣管 6‧‧‧ air supply pipe

7‧‧‧排氣口 7‧‧‧ exhaust port

8‧‧‧板件/保護電極/蓋板/絕緣板 8‧‧‧Board / Protective electrode / Cover plate / Insulation plate

8'‧‧‧孔 8'‧‧‧hole

9‧‧‧電漿電極/板件 9‧‧‧ Plasma electrode / plate

10‧‧‧板件/保護電極/金屬板 10‧‧‧plate / protective electrode / metal plate

10'‧‧‧通孔 10'‧‧‧through hole

11‧‧‧加熱元件/板件/迴形件/線圈/氣體加熱單元 11‧‧‧Heating element / plate / shape / coil / gas heating unit

12‧‧‧接觸件 12‧‧‧Contact

13‧‧‧接觸件 13‧‧‧Contact

14‧‧‧高壓電源/電漿電壓源 14‧‧‧High-voltage power supply / plasma voltage source

15‧‧‧加熱電壓源/加熱電流源 15‧‧‧Heating voltage source / Heating current source

16‧‧‧基板 16‧‧‧ substrate

17‧‧‧基座 17‧‧‧ base

18‧‧‧絕緣板 18‧‧‧ Insulation board

19‧‧‧金屬板/板件 19‧‧‧Metal sheet / plate

19'‧‧‧通孔 19'‧‧‧through hole

20‧‧‧導電桿/固持桿 20‧‧‧Conductive rod / retaining rod

21‧‧‧導電桿/固持桿 21‧‧‧Conductive rod / retaining rod

22‧‧‧固持桿 22‧‧‧ holding rod

23‧‧‧絕緣板/板件 23‧‧‧Insulation board / plate

23'‧‧‧孔 23'‧‧‧hole

24‧‧‧固持桿 24‧‧‧ holding rod

以下基於附圖對本發明之例示性實施例進行解釋。在圖中: 圖1展示根據第一例示性實施例的CVD反應器之圖解說明,圖2展示根據第二例示性實施例的CVD反應器之圖解說明,圖3展示本發明之第三例示性實施例,且圖4展示本發明之第四例示性實施例。 Exemplary embodiments of the present invention are explained below based on the drawings. In the picture: FIG. 1 shows a diagrammatic illustration of a CVD reactor according to a first exemplary embodiment, FIG. 2 shows a diagrammatic illustration of a CVD reactor according to a second exemplary embodiment, and FIG. 3 shows a third exemplary embodiment of the present invention, and FIG. 4 shows a fourth exemplary embodiment of the present invention.

在附圖中說明之CVD反應器各具有氣密性之反應器殼體1。基座17位於該反應器殼體1內部,該基座可加熱至300℃與1200℃之間之處理溫度。基板16位於基座17之面向上面之上側上,在基板之面向上面之上側上將沈積出石墨烯或碳奈米管形式之碳奈米結構,或亦將沈積出石墨烯單層或石墨烯多層薄片或纖維。 The CVD reactors illustrated in the drawings each have an airtight reactor housing 1. A susceptor 17 is located inside the reactor housing 1, and the susceptor can be heated to a processing temperature between 300 ° C and 1200 ° C. The substrate 16 is located on the upper and upper side of the base 17, and a carbon nanostructure in the form of graphene or carbon nanotubes will be deposited on the upper and upper side of the substrate 17, or a single layer of graphene or graphene will also be deposited. Multiple sheets or fibers.

進氣元件2之排氣面4在基座上方並且與基座隔一段距離延伸。排氣面4具有複數個按柵格網路配置之排氣口7。進氣元件2具有類似於蓮蓬頭之設計,使得進氣元件2亦被稱作蓮蓬頭。 The exhaust surface 4 of the air intake element 2 is above the base and extends at a distance from the base. The exhaust surface 4 has a plurality of exhaust ports 7 arranged in a grid network. The air intake element 2 has a design similar to a shower head, so that the air intake element 2 is also called a shower head.

供氣管6通入進氣元件2內。若多種相互不同之處理氣體被饋入進氣元件2內,則亦可存在多個供氣管。在氣體混合系統(未圖示)中提供處理氣體。 The air supply pipe 6 opens into the air intake element 2. If a plurality of mutually different processing gases are fed into the air intake element 2, a plurality of gas supply pipes may also exist. A process gas is provided in a gas mixing system (not shown).

進氣元件2被壁板3、3'、3"全部封圍。殼體空腔5位於進氣元件2之壁板3、3'、3"、4內,該殼體空腔表示反應室,在其內發生氣體之前軀體反應,在此期間,(例如)含碳之氣體被解離並形成芳香族或聚合之中間產物。詳言之,該中間產物為自由基。借助於運載氣體經排氣口7將其輸送至基板16,在那裏其被沈積,同時形成由碳構成之奈米結構,詳言之,石墨烯層或小管。 The air inlet element 2 is completely enclosed by the wall plates 3, 3 ', 3 ". The housing cavity 5 is located in the wall plates 3, 3', 3", 4 of the air inlet element 2, which represents the reaction chamber The body reacts before a gas occurs within it, during which, for example, a carbon-containing gas is dissociated and an aromatic or polymeric intermediate is formed. Specifically, the intermediate product is a free radical. It is transported to the substrate 16 by means of a carrier gas via an exhaust port 7 where it is deposited while forming a nanostructure made of carbon, in particular a graphene layer or a small tube.

多個彼此平行地並且與排氣面4平行延伸之板件8、9、10、11位於進氣元件2之殼體空腔5之內部。此等板件在殼體空腔5之整個橫截面上延伸並且具有複數個均勻配置之孔。為了改良氣體混合,該等孔相互不同且相鄰之板件被彼此錯位地配置。 A plurality of plates 8, 9, 10, 11 extending parallel to each other and parallel to the exhaust surface 4 are located inside the housing cavity 5 of the air intake element 2. These plates extend over the entire cross section of the housing cavity 5 and have a plurality of uniformly arranged holes. In order to improve the gas mixing, the holes are different from each other and adjacent plates are arranged offset from each other.

板件9相對進氣元件2之殼體絕緣並且藉由高壓電源14施加高壓交流電流或直流電流,使得能夠在殼體空腔5內部形成電漿。電漿電極9位於兩個各自接地之保護電極8、10之間。 The plate 9 is insulated from the casing of the air intake element 2 and a high-voltage AC current or a DC current is applied by a high-voltage power source 14 so that a plasma can be formed inside the casing cavity 5. The plasma electrode 9 is located between two protective electrodes 8 and 10 which are respectively grounded.

設有加熱元件11。加熱元件11具有兩個接觸件12、13,該等接觸件連接至加熱電壓源15,使得電流可流過加熱元件11,電流由於其電阻而對加熱元件11加熱。與加熱元件11直接相鄰之板件8或10及排氣面4之內壁可實施為熱反射性。 A heating element 11 is provided. The heating element 11 has two contacts 12, 13 which are connected to a heating voltage source 15 so that a current can flow through the heating element 11 and the current heats the heating element 11 due to its resistance. The inner wall of the plate 8 or 10 and the exhaust surface 4 directly adjacent to the heating element 11 may be implemented as heat-reflective.

在圖1中說明之例示性實施例中,加熱元件由電漿電極9自身形成。加熱電流源15與電漿電壓源14串聯連接,使得加熱電漿電極9之電流可流過具有端電極12、13之電漿電極9。 In the exemplary embodiment illustrated in FIG. 1, the heating element is formed by the plasma electrode 9 itself. The heating current source 15 is connected in series with the plasma voltage source 14 so that the current for heating the plasma electrode 9 can flow through the plasma electrode 9 having the terminal electrodes 12 and 13.

在圖2中說明之例示性實施例中電漿電極9及加熱元件11在空間上彼此分離。在此,加熱元件11位於下保護電極10及與保護電極10平行延伸且由進氣元件2之下壁形成的排氣面4之間。在此,電流源15亦與電壓源14分離。 In the exemplary embodiment illustrated in FIG. 2, the plasma electrode 9 and the heating element 11 are spatially separated from each other. Here, the heating element 11 is located between the lower protective electrode 10 and an exhaust surface 4 extending parallel to the protective electrode 10 and formed by the lower wall of the air intake element 2. Here, the current source 15 is also separated from the voltage source 14.

在圖1中說明之例示性實施例中,保護電極8、10用作用於自加熱元件11發射之熱量之反射器,而在圖2中說明之例示性實施例中,保護電極10及進氣元件2之下壁則用作反射器。 In the exemplary embodiment illustrated in FIG. 1, the guard electrodes 8, 10 are used as reflectors for the heat emitted from the heating element 11, while in the exemplary embodiment illustrated in FIG. 2, the guard electrode 10 and the air intake The lower wall of element 2 is used as a reflector.

加熱元件11可為板件,亦可為迴形形狀之元件或線圈,詳言之,扁平線圈。 The heating element 11 may be a plate, or may be a round-shaped element or a coil, specifically, a flat coil.

在圖3中展示之第三例示性實施例具有反應器殼體1,該反應器殼體可具有具圓形佔據面積之圓柱體形狀。基座17位於反應器殼體1內,該基座可具有加熱裝置或冷卻單元。 The third exemplary embodiment shown in FIG. 3 has a reactor housing 1 which may have a cylindrical shape with a circular footprint. A base 17 is located inside the reactor housing 1, which base may have a heating device or a cooling unit.

待塗佈之基板16位於基座17上。 The substrate 16 to be coated is located on the base 17.

具有排氣口且由絕緣材料製造之板件23在基座17之整個平面上在基座17上方隔一段垂直距離延伸。在板件23上方以較小之距離延伸著金屬之、扁平之、螺旋形或迴形之板條,該板條在其端部形成接觸 件12、13。該板條形成在圓柱面上延伸之加熱元件11,該加熱元件可由加熱電壓源15供電。 The plate 23 having an exhaust port and made of an insulating material extends over the base 17 at a vertical distance over the entire plane of the base 17. A metal, flat, spiral, or meandering slat extends at a small distance above the plate 23, the slat making contact at its ends Pieces 12,13. The slat forms a heating element 11 extending on a cylindrical surface, which heating element can be powered by a heating voltage source 15.

在與板件23平行延伸之加熱元件11上方,進氣元件2之排氣面4在平行層中延伸。排氣面4具有複數個排氣口7。進氣元件2之殼體由金屬構成並且接地。 Above the heating element 11 extending parallel to the plate 23, the exhaust surface 4 of the air intake element 2 extends in a parallel layer. The exhaust surface 4 has a plurality of exhaust ports 7. The housing of the air intake element 2 is made of metal and is grounded.

直接地在排氣口7之上方,亦即,在進氣元件2之殼體空腔5內,兩個接地之金屬板10、19與排氣面4平行地延伸。電漿電極9在此等保護板10、19對之上游延伸,該電漿電極由高壓電源14供電,用於在進氣元件2之殼體空腔5內形成電漿。 Directly above the exhaust opening 7, that is, in the housing cavity 5 of the air intake element 2, two grounded metal plates 10, 19 extend parallel to the exhaust surface 4. A plasma electrode 9 extends upstream of the pair of protective plates 10 and 19, and the plasma electrode is powered by a high-voltage power source 14 for forming a plasma in the cavity 5 of the housing of the air intake element 2.

電漿電極9在殼體空腔5之整個橫截面上延伸,另一個具有氣體通孔之絕緣板18位於該電漿電極之上游。另一個同樣具有通孔之金屬接地板位於緣板18之上游。 The plasma electrode 9 extends over the entire cross-section of the cavity 5 of the casing, and another insulating plate 18 with a gas through hole is located upstream of the plasma electrode. Another metal ground plate also having a through hole is located upstream of the edge plate 18.

經由供氣管6流入的含有上述處理氣體之氣流進入殼體空腔5並穿過配置在殼體空腔5內之板件8、18、9、10、19之孔,並且經由排氣口7自進氣元件2排出。使用在殼體空腔5內設置之電漿電極9,產生電漿。此電漿在空間上被限制在接地板件8與10之間的區域,電漿電極9位於兩個接地電極8、10之間,其中由絕緣材料製造之絕緣板18位於配置在電漿電極9上方之接地保護板8與電漿電極9之間。使用該電漿執行物理分解,或至少離子化處理氣體。以此方式解離或激勵之處理氣體自排氣口7流出排氣面4並且在穿過加熱元件11之被加熱之平面件之間的縫隙時被熱活化。以此方式熱活化之起始材料穿過絕緣板23之排氣口進入處理室,該處理室位於絕緣板23與基座17之間。 The gas stream containing the processing gas introduced through the gas supply pipe 6 enters the housing cavity 5 and passes through the holes of the plates 8, 18, 9, 10, 19 disposed in the housing cavity 5 and passes through the exhaust port 7 It is discharged from the air intake element 2. A plasma electrode 9 provided in the cavity 5 of the housing is used to generate a plasma. This plasma is spatially limited to the area between the ground plates 8 and 10, and the plasma electrode 9 is located between the two ground electrodes 8, 10, of which the insulating plate 18 made of an insulating material is located at the plasma electrode Between the ground protection plate 8 above the plasma electrode 9. Use this plasma to perform physical decomposition, or at least ionize the process gas. The processing gas dissociated or excited in this manner flows out of the exhaust surface 4 from the exhaust port 7 and is thermally activated as it passes through the gap between the heated planar pieces of the heating element 11. The starting material thermally activated in this way passes through the exhaust port of the insulating plate 23 and enters the processing chamber, which is located between the insulating plate 23 and the base 17.

在圖4中所說明之第四例示性實施例中,進氣元件2亦由金屬空心體構成,該空心體在其端側具有排氣口7。彼此間隔且由金屬構成之兩個保護電極10、19在此亦位於殼體空腔5內部。此等保護電極經使用導電桿20、21緊固至導電並接地之蓋板8上。 In the fourth exemplary embodiment illustrated in FIG. 4, the air intake element 2 is also composed of a metal hollow body having an exhaust port 7 on its end side. The two protective electrodes 10, 19 spaced from each other and made of metal are also located inside the housing cavity 5. These protective electrodes are fastened to a conductive and grounded cover plate 8 using conductive rods 20,21.

由絕緣材料製成之板件18在蓋板8下方延伸。板件18在蓋板8上與其觸碰接觸。 A plate 18 made of an insulating material extends below the cover plate 8. The plate 18 is in contact with it on the cover plate 8.

電壓源可將電壓施加至之平面電漿電極9在絕緣板18上與其觸碰接觸。電漿電極9及絕緣板18具有孔,固持桿21穿過該等孔。此等孔在圖4中未展示。 The planar plasma electrode 9 to which the voltage source can apply a voltage is in contact with it on the insulating plate 18. The plasma electrode 9 and the insulating plate 18 have holes, and the holding rod 21 passes through the holes. These holes are not shown in FIG. 4.

在此例示性實施例中,氣體加熱裝置配置在進氣元件2之外部。該氣體加熱裝置由薄金屬板構成,該金屬板具有按迴形或螺旋形狀延伸之縫隙。以此方式,產生薄金屬板條,該金屬板條在其端部緊固至端接觸件12、13。端接觸件12、13可坐落於固持桿24之端部,使用該等固持桿將加熱元件11按較小之距離固持在排氣口7之下方。經由固持桿24執行加熱元件11之電力供應。固持桿24可使用絕緣(未圖示)來圍住並且以絕緣形式穿透板件8,使得可自外面引導電流穿過固持桿24。 In this exemplary embodiment, the gas heating device is disposed outside the air intake element 2. The gas heating device is composed of a thin metal plate having a slit extending in a round shape or a spiral shape. In this way, a thin metal slat is produced, which is fastened to the end contacts 12, 13 at its ends. The end contacts 12 and 13 may be located at the ends of the holding rods 24, and the heating elements 11 are held below the exhaust port 7 by a small distance using these holding rods. The power supply of the heating element 11 is performed via the holding rod 24. The holding rod 24 can be surrounded by insulation (not shown) and penetrates the plate 8 in an insulated form, so that current can be guided through the holding rod 24 from the outside.

由絕緣材料製成且亦使用固持桿固定的呈圓盤之形式之板件23在基座17之表面與加熱元件11之間延伸。絕緣板23具有孔23',解離或熱激勵之處理氣體經由該等孔23'可在朝向位於基座17上之基板16的方向上流動。 A plate 23 in the form of a disk made of an insulating material and also fixed using a holding rod extends between the surface of the base 17 and the heating element 11. The insulating plate 23 has holes 23 ′ through which dissociated or thermally excited processing gas can flow in a direction toward the substrate 16 on the base 17.

在此亦經由供氣管6執行將處理氣體引入至進氣元件2之殼體空腔5內。在接地之板件10、19與與其絕緣之電漿電極9之間形成電漿。離子化之或解離之起始材料自排氣口7排出並進入加熱元件11所位於之熱激勵區。熱激勵區在朝向基座17之方向上由絕緣板23限定邊界,經由該絕緣板之孔23',熱活化之起始材料在朝向基板16之方向上排出。在此例示性實施例中,電漿電極9亦具有至少一個孔,處理氣體可穿過該孔。 The introduction of the processing gas into the housing cavity 5 of the air intake element 2 is also performed here via the gas supply pipe 6. A plasma is formed between the grounded plates 10, 19 and the plasma electrodes 9 insulated therefrom. The ionized or dissociated starting material is discharged from the exhaust port 7 and enters the thermal excitation zone where the heating element 11 is located. The thermally excited region is bounded by the insulating plate 23 in the direction toward the base 17, and the thermally activated starting material is discharged in the direction toward the substrate 16 through the hole 23 ′ of the insulating plate. In this exemplary embodiment, the plasma electrode 9 also has at least one hole through which the processing gas can pass.

以上敍述用於解釋本申請案總體所包含之發明,本發明至少藉由以下之特徵組合各自獨立地改進先前技術,如下: 一種裝置,其特徵在於用於輔助轉換之氣體加熱單元11,該氣體加熱單元配置在組件8、9、10之下游。 The above description is used to explain the invention included in the present application as a whole. The present invention independently improves the prior art by at least the following feature combinations, as follows: A device characterized by a gas heating unit 11 for assisting conversion, which gas heating unit is arranged downstream of the components 8, 9, 10.

一種裝置,其特徵在於,進氣元件2配置在CVD反應器1之處理室中,該CVD反應器具有可加熱之基座17,該基座17為用於容納一或多個基板16之載體,其中該基座17與處理室之底部相關聯,並且該排氣面4與該處理室之蓋板相關聯,該處理室如此形成,使得自該排氣面4排出的氣態之中間產物經輸送至至少一個基板16,在該基板16上沈積奈米結構。 A device, characterized in that an air inlet element 2 is arranged in a processing chamber of a CVD reactor 1, the CVD reactor having a heatable base 17 which is a carrier for accommodating one or more substrates 16 Wherein, the base 17 is associated with the bottom of the processing chamber, and the exhaust surface 4 is associated with the cover plate of the processing chamber, the processing chamber is formed so that the gaseous intermediate products discharged from the exhaust surface 4 pass through Transported to at least one substrate 16 on which nanostructures are deposited.

一種裝置,其特徵在於,電漿電極9具有柵格或板件之形式,其配置在氣態之起始材料的流動路徑內或該進氣元件2之上壁板3上。 A device is characterized in that the plasma electrode 9 has the form of a grid or a plate, which is arranged in the flow path of the gaseous starting material or on the wall plate 3 above the air inlet element 2.

一種裝置,其特徵在於呈配置在氣態之起始材料之流動路徑中的柵格之形式之一或多個保護電極10、19或具有通孔10'、19'之板件10、19,其中至少一個保護電極8配置在電漿電極9之上游及/或其中至少一個保護電極10、19配置在電漿電極9之下游。 A device characterized by one or more guard electrodes 10, 19 or plates 10, 19 having through holes 10 ', 19' in the form of a grid arranged in a flow path of a gaseous starting material, wherein At least one guard electrode 8 is disposed upstream of the plasma electrode 9 and / or at least one guard electrode 10, 19 is disposed downstream of the plasma electrode 9.

一種裝置,其特徵在於,該氣體加熱單元11具有板件、柵格、迴形或線圈之形狀,該加熱單元詳言之配置在氣態之起始材料之流動路徑中的橫向於流動延伸之平面中,其中該氣體加熱單元11具有端電極12、13,用於引導電流經過該氣體加熱單元11。 A device characterized in that the gas heating unit 11 has the shape of a plate, a grid, a meander or a coil, and the heating unit is arranged in detail in a flow path of a gaseous starting material, which is transverse to a plane extending through the flow Wherein, the gas heating unit 11 has terminal electrodes 12 and 13 for guiding a current through the gas heating unit 11.

一種裝置,其特徵在於,保護電極8、10、電漿電極9及/或氣體加熱裝置11由板件形成,該板件各自具有複數個孔,其中為了氣體混合之目的,相鄰之板件之孔彼此錯位地配置。 A device, characterized in that the protective electrodes 8, 10, the plasma electrode 9, and / or the gas heating device 11 are formed of plates, each of which has a plurality of holes, and for the purpose of gas mixing, adjacent plates The holes are arranged offset from each other.

一種裝置,其特徵在於,一或多個形成電極8、9、10之板件及/或進氣元件2的具有排氣口7之壁板之內側具有熱反射性質。 A device, characterized in that the inside of one or more plates forming the electrodes 8, 9, 10 and / or the wall plate of the air intake element 2 having the exhaust port 7 has a heat reflection property.

一種裝置,其特徵在於,配置在平面內之氣體加熱單元11在氣體之流動方向上直接配置在排氣面4之後面,及/或保護電極8直接與該基板16相對,其中該保護電極8具有用於氣體通過之孔8'。 A device, characterized in that the gas heating unit 11 arranged in a plane is directly arranged behind the exhaust surface 4 in the flow direction of the gas, and / or the protective electrode 8 is directly opposite the substrate 16, wherein the protective electrode 8 With holes 8 'for gas passage.

根據前述技術方案中之一或多者的裝置,其特徵在於,進氣元件2之上壁板3為絕緣板18,電漿電極9沿著該絕緣板18延伸。 The device according to one or more of the foregoing technical solutions, wherein the wall plate 3 above the air inlet element 2 is an insulating plate 18, and the plasma electrode 9 extends along the insulating plate 18.

一種裝置,其特徵在於兩個保護電極10、19,該兩個保護電極相互間隔且配置在該殼體空腔5內部,且使用導電固持桿20、21將保護電極10、19連接至接地之電極8。 A device, characterized in that two protective electrodes 10, 19 are spaced apart from each other and are disposed inside the cavity 5 of the housing, and the conductive electrodes 10, 19 are connected to the ground using conductive holding rods 20, 21 Electrode 8.

一種方法,其特徵在於,視情況,連同運載氣體,包含至少一種氧化或還原或含碳的氣態之起始材料之混合物或清潔氣體經由供氣管6被饋入至殼體空腔5內,其中既由電漿產生器8、9、10且亦由氣體加熱裝置11向氣體混合物施加能量。 A method, characterized in that, together with a carrier gas, a mixture containing at least one oxidized or reduced or carbon-containing gaseous starting material or a cleaning gas is fed into the housing cavity 5 via a gas supply pipe 6, where Energy is applied to the gas mixture by both the plasma generators 8, 9, 10 and also by the gas heating device 11.

一種方法,其特徵在於,該氣態之起始材料在殼體空腔內同時藉由供應由該加熱單元11產生之熱量及藉由由電漿產生器8、9,10產生之電漿而被活化或解離,使得形成原子之或離子化之自由基、氣態之聚合物或芳香族之中間產物,詳言之,呈自由基之形式。 A method, characterized in that the gaseous starting material is simultaneously charged in the cavity of the housing by supplying heat generated by the heating unit 11 and by plasma generated by the plasma generators 8, 9, 10 Activation or dissociation such that atomic or ionized free radicals, gaseous polymers or aromatic intermediates are formed, in particular, in the form of free radicals.

一種方法,其特徵在於,連續地及/或脈衝式地產生電漿,及/或該氣態之起始材料經連續地或脈衝式地饋入至進氣元件2內。 A method, characterized in that the plasma is continuously and / or pulsed and / or the gaseous starting material is fed into the air-intake element 2 continuously or pulsed.

一種方法,其特徵在於,在配置在處理室內之基板16上沈積出由碳構成之奈米結構的方法步驟前或後,進行清潔步驟,在該清潔步驟期間,被饋入至殼體空腔5內之清潔氣體藉由施加電漿及/或藉由加熱而被活化,其中詳言之,在沈積步驟之前或之後週期性地進行清潔步驟。 A method, characterized in that a cleaning step is performed before or after a method step of depositing a nanostructure made of carbon on a substrate 16 disposed in a processing chamber, and during the cleaning step, it is fed into a housing cavity The cleaning gas in 5 is activated by applying a plasma and / or by heating, wherein in detail, the cleaning step is performed periodically before or after the sedimentation step.

一種方法,其特徵在於,使用尤其接地且配置在電漿電極9及/或該加熱單元13下游之元件(諸如,保護電極10及/或接地之排氣面4),捕捉在轉換反應期間形成之粒子。 A method characterized by using elements (such as a guard electrode 10 and / or a grounded exhaust surface 4) that are particularly grounded and disposed downstream of the plasma electrode 9 and / or the heating unit 13 to capture the formation during the conversion reaction Of particles.

所有揭示之特徵皆為本發明所必要(單獨地或亦按相互組合)。在本申請案之揭示中,相關聯之/附屬之優先權文件(先前申請案之複本)的揭示之內容在此亦被全部併入,亦為了將此等文件中之特徵包括於 本申請案之申請專利範圍中之目的。附屬請求項之特徵在於根據先前技術之發明關於其特徵之獨立改進,詳言之,以基於此等申請專利範圍進行分案申請。 All the disclosed features are necessary (either individually or also in combination) with the present invention. In the disclosure of this application, the disclosure of the associated / subsidiary priority document (a copy of the previous application) is also incorporated herein in its entirety, in order to include the features of these documents in Purpose within the scope of patent application for this application. The subsidiary claim is characterized by an independent improvement on the features of the invention according to the prior art, and in particular, a divisional application is made based on the scope of these patent applications.

Claims (15)

一種裝置,用於製造由碳構成之奈米結構,諸如,單層、多層薄片結構、小管或纖維,該裝置具有一進氣元件(2),該進氣元件(2)具有被殼體壁板(3、3'、3")封圍之一殼體空腔(5),一供氣管(6)通入該殼體空腔(5)內,一氣態之含碳之起始材料經由該供氣管(6)可被饋入至該殼體空腔(5)內,該裝置具有具備至少部分配置在該殼體空腔(5)內之組件(8、9、10)的一電漿產生器,該電漿產生器具有至少一個可經施加電壓之電漿電極(9),經藉由點燃一電漿向該氣態之起始材料施加能量並且由此將其轉換成一氣態之中間產物,且該裝置具有具備複數個排氣口(7)之一排氣面(4),該氣態之中間產物可經由排氣口(7)自該殼體空腔(5)中排出,其特徵在於用於輔助該轉換之一氣體加熱單元(11),該氣體加熱單元(11)配置在該等組件(8、9、10)之下游,其中該氣體加熱單元(11)配置在電漿電極(9)和接地電極(10、19)之下游以及配置在一絕緣板(23)之開口(23')之上游,該絕緣板(23)配置在該排氣面(4)與一基座(17)之間。A device for manufacturing a nanostructure made of carbon, such as a single-layer, multi-layer sheet structure, a small tube, or a fiber, the device having an air-intake element (2) having a housing wall The plate (3, 3 ', 3 ") encloses a shell cavity (5), an air supply pipe (6) leads into the shell cavity (5), and a gaseous carbon-containing starting material passes through The air supply pipe (6) can be fed into the housing cavity (5), and the device has a power supply having components (8, 9, 10) at least partially arranged in the housing cavity (5). A plasma generator having at least one plasma electrode (9) capable of applying a voltage, by applying energy to the gaseous starting material by igniting a plasma and thereby converting it into a gaseous intermediate Product, and the device has an exhaust surface (4) having a plurality of exhaust ports (7), the gaseous intermediate product can be discharged from the housing cavity (5) through the exhaust port (7), It is characterized by a gas heating unit (11) for assisting the conversion, the gas heating unit (11) is arranged downstream of the components (8, 9, 10), wherein the gas heating unit (11) is arranged in a plasma Electricity Downstream of the electrode (9) and the ground electrode (10, 19) and upstream of the opening (23 ') of an insulating plate (23), the insulating plate (23) is arranged on the exhaust surface (4) and a base Between seats (17). 如請求項1之裝置,其中該進氣元件(2)配置在一CVD反應器(1)之一處理室中,該CVD反應器具有該可加熱之基座(17),該基座(17)為用於容納一或多個基板(16)之一載體,其中該基座(17)與一處理室之底部相關聯,且該排氣面(4)與該處理室之蓋板相關聯,該處理室經實施,使得自該排氣面(4)排出的該氣態之中間產物經輸送至至少一個基板(16),在該基板(16)上沈積該等奈米結構。The device of claim 1, wherein the gas inlet element (2) is arranged in a processing chamber of a CVD reactor (1), the CVD reactor having the heatable base (17), the base (17) ) Is a carrier for accommodating one or more substrates (16), wherein the base (17) is associated with the bottom of a processing chamber, and the exhaust surface (4) is associated with a cover plate of the processing chamber The processing chamber is implemented so that the gaseous intermediate product discharged from the exhaust surface (4) is transported to at least one substrate (16), and the nanostructures are deposited on the substrate (16). 如請求項2之裝置,其中該電漿電極(9)具有一柵格或一板件之形式,其配置在該氣態之起始材料之流動路徑內或該進氣元件(2)之該上壁板(3)上。The device of claim 2, wherein the plasma electrode (9) has the form of a grid or a plate, which is arranged in the flow path of the gaseous starting material or on the gas inlet element (2). Siding (3). 如請求項3之裝置,其特徵在於呈配置在該氣態之起始材料之該流動路徑中的一柵格之形式之一或多個保護電極(10、19)或具有通孔(10'、19')之一板件(10、19),其中至少一個保護電極(8)配置在該電漿電極(9)之上游,及/或其中至少一個保護電極(10、19)配置在該電漿電極(9)之下游。The device according to claim 3, characterized by one or more protective electrodes (10, 19) in the form of a grid arranged in the flow path of the gaseous starting material or having through holes (10 ', 19 ') one of the plates (10, 19), wherein at least one guard electrode (8) is disposed upstream of the plasma electrode (9), and / or at least one guard electrode (10, 19) is disposed on the electrode Downstream of the paddle electrode (9). 如請求項1之裝置,其中該氣體加熱單元(11)具有一板件、一柵格、一迴形或一線圈之形式,該加熱單元尤其配置在該氣態之起始材料之該流動路徑中的橫向於流動延伸之一平面中,其中該氣體加熱單元(11)具有端電極(12、13),用於引導一電流經過該氣體加熱單元(11)。The device according to claim 1, wherein the gas heating unit (11) has the form of a plate, a grid, a loop or a coil, and the heating unit is particularly arranged in the flow path of the gaseous starting material. In a plane extending transverse to the flow, the gas heating unit (11) has terminal electrodes (12, 13) for guiding an electric current through the gas heating unit (11). 如請求項4之裝置,其中該等保護電極(8、10)、該電漿電極(9)及/或該氣體加熱裝置(11)由板件形成,該板件各具有複數個孔,其中為了氣體混合之目的,相鄰之板件之該等孔彼此錯位地配置。The device according to claim 4, wherein the protective electrodes (8, 10), the plasma electrodes (9) and / or the gas heating device (11) are formed of a plate, each of which has a plurality of holes, of which For the purpose of gas mixing, the holes of adjacent plates are arranged offset from each other. 如請求項6之裝置,其中一或多個形成該等電極(8、9、10)之板件及/或該進氣元件(2)之具有該等排氣口(7)之該等壁板之內側具有熱反射性質。If the device of claim 6, one or more of the plates forming the electrodes (8, 9, 10) and / or the walls of the air inlet element (2) with the exhaust ports (7) The inside of the board has heat reflecting properties. 如請求項2之裝置,其中配置在一平面內之該氣體加熱單元(11)在氣體之流動方向直接配置在該排氣面(4)之後面,及/或一保護電極(8)直接與該基板(16)相對,其中該保護電極(8)具有用於氣體通過之孔(8')。The device according to claim 2, wherein the gas heating unit (11) arranged in a plane is arranged directly behind the exhaust surface (4) in the flow direction of the gas, and / or a protective electrode (8) directly communicates with The substrate (16) is opposite, wherein the protective electrode (8) has a hole (8 ') for gas passage. 如請求項1之裝置,其中該進氣元件(2)之該上壁板(3)為該絕緣板(18),該電漿電極(9)沿著該絕緣板(18)延伸。The device according to claim 1, wherein the upper wall plate (3) of the air inlet element (2) is the insulating plate (18), and the plasma electrode (9) extends along the insulating plate (18). 如請求項1之裝置,其特徵在於兩個保護電極(10、19),該兩個保護電極(10、19)相互間隔且配置在該殼體空腔(5)內部,且使用導電固持桿(20、21)將該兩個保護電極(10、19)連接至一接地之電極(8)。The device according to claim 1, characterized in that two protective electrodes (10, 19) are spaced apart from each other and are arranged inside the cavity (5) of the housing, and a conductive holding rod is used (20, 21) The two protective electrodes (10, 19) are connected to a grounded electrode (8). 一種用於在如請求項1及4之任一項之一裝置中製造由碳構成的諸如單層,多層薄片結構、小管或纖維之奈米結構之方法,其特徵在於,視情況,連同一運載氣體,含有至少一種氧化或還原或含碳之氣態之起始材料的一混合物或一清潔氣體經由供氣管(6)被饋入至殼體空腔(5)內,其中既由電漿產生器(8、9、10)且亦由氣體加熱裝置(11)向該氣體混合物施加能量。A method for manufacturing a carbon, such as a single-layer, multi-layer sheet structure, a small tube, or a nanostructure of a fiber, in a device as claimed in any one of claims 1 and 4, characterized in that, if appropriate, the same Carrier gas, a mixture containing at least one oxidized or reduced or carbon-containing gaseous starting material or a clean gas is fed into the housing cavity (5) via a gas supply pipe (6), which is generated by the plasma The heater (8, 9, 10) and the gas mixture also applies energy to the gas mixture. 如請求項11之方法,其中該氣態之起始材料在該殼體空腔內同時藉由供應由該加熱單元(11)產生之熱量及藉由由該電漿產生器(8、9,10)產生之一電漿而被活化或解離,使得形成原子之或離子化之自由基、氣態之聚合物或芳香族之中間產物。The method as claimed in item 11, wherein the gaseous starting material is simultaneously supplied in the housing cavity by the heat generated by the heating unit (11) and by the plasma generator (8, 9, 10). ) Generates a plasma and is activated or dissociated, so that atomic or ionized free radicals, gaseous polymers or aromatic intermediates are formed. 如請求項12之方法,其中連續地及/或脈衝式地產生該電漿,及/或該氣態之起始材料經連續地或脈衝式地被饋入至進氣元件(2)內。The method of claim 12, wherein the plasma is continuously and / or pulsed, and / or the gaseous starting material is continuously or pulsed into the air inlet element (2). 如請求項11之方法,其中在配置在處理室內之基板(16)上沈積出由碳構成之奈米結構的方法步驟前或後,進行一清潔步驟,在該清潔步驟期間,被饋入至該殼體空腔(5)內之一清潔氣體藉由施加一電漿及/或藉由加熱而被活化,其中詳言之,在一沈積步驟之前或之後週期性地進行該清潔步驟。The method as claimed in claim 11, wherein a cleaning step is performed before or after the method step of depositing a nanostructure made of carbon on the substrate (16) disposed in the processing chamber, and during the cleaning step, it is fed to A cleaning gas in the housing cavity (5) is activated by applying a plasma and / or by heating, wherein in particular, the cleaning step is performed periodically before or after a deposition step. 如請求項11之方法,其中使用諸如保護電極(10)及/或接地之排氣面(4)的尤其接地且配置在電漿電極(9)及/或加熱單元(13)下游之元件,捕捉在轉換反應期間形成之粒子。A method as claimed in item 11 in which a component, such as a protective electrode (10) and / or a grounded exhaust surface (4), is used which is particularly grounded and is arranged downstream of the plasma electrode (9) and / or the heating unit (13), Captures particles formed during the conversion reaction.
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