[0009] 以下,參照添附之圖面說明本發明之實施例。實施例中,作為具有控制基板及電抗器的機器之一例雖舉出冷凍庫進行說明,但只要是具有控制基板及電抗器,而且具有例如收納彼等之以金屬材料形成的控制基板收納部或控制基板蓋即可,對於機器並未特別限制。 [實施例1] [0010] 圖1係本實施例的冷凍庫1之正面圖,圖2係冷凍庫1之X-X斷面圖,圖3係控制基板7及控制基板7的安裝構造之分解斜視圖。 冷凍庫1具備複數個保管食品之用的貯藏室,本實施例中具備冷藏室2、蔬菜室3及冷凍室4。在冷凍庫1之背面內部,例如由藉由可以施加三相交流電力的電動機進行驅動的壓縮機5、使冷凍庫1內之冷氣循環的風扇用電動機6、對壓縮機5之電動機或風扇用電動機6進行驅動及控制的控制基板7、對各貯藏室之溫度進行檢測的室內溫度感測器、及冷凍循環要件等構成。 [0011] 冷凍循環要件如周知般係由壓縮機5、冷凝器、膨脹閥、蒸發器、及冷媒配管等構成,彼等之構成元件主要配置於冷凍庫1之背面側及側面側。 [0012] [控制基板收納部10] 冷凍庫1於背面側具有以金屬材料形成的背面板11。於背面板11設置有控制基板收納部10。控制基板收納部10具有:可以作為使背面板11之一部分朝向正面側凹陷的區域而形成,且與後述之控制基板7的面方向大致平行的平面部101;及與平面部101大致垂直的側周部102。平面部101例如為四角形狀,側周部102例如可以為尺寸較平面部101小的環狀。形成為在後述的電抗器8所產生的洩漏磁通之頻率附近,側周部102比起平面部101更難產生共振的形狀。該洩漏磁通之頻率係和流入電抗器8的交流電流之頻率區域相同。 [0013] 在設置有控制基板收納部10的區域,自冷凍庫1之正面側起依序安裝有控制基板收納部10之平面部101、框架9、控制基板7及電抗器8、以及控制基板蓋12。如此般,控制基板收納部10位於電抗器8之一側,控制基板蓋12位於電抗器8之另一側。控制基板收納部10與控制基板蓋12係藉由金屬材料、例如藉由板金材料成型,而且與控制基板7呈大致平行地被設置。 [0014] 框架9可以由樹脂材料成型,控制基板7被安裝於控制基板配置部91,電抗器8被安裝於電抗器配置部92。電抗器8,係在電抗器配置部92內,以一部分與控制基板7之面內呈重疊的方式,亦即在控制基板7之旁邊被配置。又,電抗器8被框架9具有的爪卡合。如後述說明,本實施例中係將電抗器8之洩漏磁通較多的方向設定成為側周部102側,因此,較佳為電抗器8至側周部102之距離比電抗器8至平面部101之距離長。 [0015] 電抗器8至控制基板蓋12之距離以及電抗器8至平面部101之距離,可以藉由調整框架9之厚度較佳地進行設定。若將平面部101與控制基板蓋12進行比較,則平面部101係藉由發泡隔熱材或真空隔熱材支撐,另一方面,控制基板蓋12則以較自由的狀態被配設,因此控制基板蓋12較容易引起振動。基於此,本實施例中,將電抗器8至控制基板蓋12之距離設為較電抗器8至平面部101之距離長。如此則,可以比較能夠減低對控制基板蓋12之洩漏磁通量,因此可以抑制振動。 [0016] [電氣系統] 圖4係本實施例的包含設於控制基板7的電氣系統之方塊圖。 [0017] 於控制基板7設置有轉換器電路16、逆變器電路18、控制電源電路19、庫內負載控制電路22、及壓縮機控制電路23。 [0018] (轉換器電路16) 轉換器電路16可以將商用電源13之交流電力轉換為直流電力。轉換器電路16具有2個二極體141、142;及串聯連接於2個二極體141、142之間的2個平滑用電解電容器151、152。 [0019] 二極體141之正極側被電連接於配設在控制基板7外的電抗器8之一端,電抗器8之另一端被電連接於商用電源13之一端。又,二極體141之負極側被電連接於平滑用電解電容器151之一端。 [0020] 平滑用電解電容器151之另一端,係被電連接於商用電源13之另一端及平滑用電解電容器152之一端。 [0021] 二極體142之正極側被電連接於平滑用電解電容器152之另一端,負極側被電連接於二極體141之負極側及電抗器8之一端。 [0022] 二極體141之負極側及正極側分別被電連接於逆變器電路18及控制電源電路19之輸入端子。商用電源13例如係100V/50Hz之交流波形。 [0023] 依據如此構成的轉換器電路16,商用電源13之交流電力被轉換為高壓直流電壓17。 [0024] 為了使商用電源13之交流電力較佳地形成為直流化的高壓直流電壓17而使用平滑用電解電容器15。僅在來自商用電源13的施加電壓大於平滑用電解電容器151、152各自之電壓的期間,以補償平滑用電解電容器15之放電能量的形式對平滑用電解電容器15流入有電流,因此成為包含有高次諧波的電流波形。因此,將供作為抑制高次諧波成分的電抗器8配置於平滑用電解電容器15(轉換器電路16)之前級。電抗器8之安裝構造如後述。 [0025] (逆變器電路18) 逆變器電路18可以發出對壓縮機5進行可變速驅動的控制信號。為了進行壓縮機5之電動機的可變速驅動,需要施加與旋轉數對應的交流電壓波形。 [0026] 經由轉換器電路16形成的高壓直流電壓17,係透過逆變器電路18被轉換為任意之交流波形。形成何種交流波形,係由壓縮機控制電路23之指令進行控制。 [0027] 如此般,高壓直流電壓17係藉由例如使用6個IGBT等之半導體功率元件的逆變器電路18(三相交流生成電路)被轉換為任意之交流波形,並輸出至壓縮機5。 [0028] (控制電源電路19) 高壓直流電壓17不僅被供給至逆變器電路18,亦被供給至控制電源電路19。控制電源電路19對高壓直流電壓17實施降壓並生成例如12V或5V之低壓直流電壓20。低壓直流電壓20供作為風扇用電動機6之驅動、或被輸入有各種溫度感測器21、溫度感測器21之資訊並對各部進行控制的庫內負載控制電路22之電源電壓等使用。 [0029] (電抗器8) 圖5係本實施例的(a)電抗器8之斜視圖,(b)電抗器8內部之鐵心80之斜視圖。 [0030] 電抗器8具有鐵心80、卷繞於鐵心80的繞線84、及收納繞線84的線管83。鐵心80具有E字狀之E鐵心81,及I字狀之I鐵心82。I鐵心82,係隔著間隙24位處於E鐵心81之「E」字狀之右側(「≡」部分),並朝向與「E」字狀之左側部分亦即棒狀部分(「|」部分)之延伸方向大致平行的方向。繞線84之兩端分別從電抗器8外側部分延伸出,透過端子可以安裝於控制基板7之中應連接於繞線84的部分。 [0031] 在E鐵心81與I鐵心82之間形成有間隙24,其用於避免磁飽和引起的電感降低。間隙24可以藉由空氣或薄片來形成。薄片可以採用絕緣物。 [0032] 藉由間隙24容易避開磁飽和,但另一方面,磁通亦容易從間隙24洩漏。 若洩漏磁通對控制基板蓋12或控制基板收納部10造成干擾,則使金屬材料之控制基板蓋12或控制基板收納部10(尤其是平面部101)起振動,成為雜音產生之主要原因。本實施例的電抗器8引起的洩漏磁通存在各向異性,存在洩漏磁通較多的方向(多漏方向)與較少的方向(少漏方向)。亦即,成立(多漏方向中的洩漏磁通)>(少漏方向中的洩漏磁通)之關係。 [0033] (電抗器8與控制基板蓋12及平面部101之位置關係) 本實施例中,使電抗器8獨立於控制基板7而進行配置,進一步藉由繞線84之端子連接於控制基板7,因此可以較自由地調整電抗器8之方向。 [0034] 圖6係比較例,(a)表示以電抗器8之多漏方向大致平行於控制基板蓋12及平面部101之垂線的方式進行配置的狀態的圖,(b)表示將洩漏磁通量相對於該狀態之各方向繪製而成的雷達圖。圖7係本實施例,(a)表示使電抗器8之多漏方向大致平行於控制基板蓋12及平面部101的方式進行配置的狀態的圖,(b)表示將洩漏磁通量相對於該狀態之各方向繪製而成的雷達圖。 [0035] 比較例及本實施例使用的鐵心形狀中,朝向E鐵心81之「E」字狀之左右側的方向(圖6(b)之1方向及5方向,圖7(b)之紙面垂直方向)之洩漏磁通量,係較朝向「E」字狀之上下方向(圖6(b)之3方向及7方向,圖7(b)之3方向及7方向)及紙面垂直方向的方向(圖6之紙面垂直方向,圖7(b)之1方向及5方向)之洩漏磁通量多。 [0036] 因此,如比較例般配置電抗器8之情況下,多漏方向之磁通以與控制基板蓋12或平面部101大致垂直的方式入射。亦即,產生於控制基板蓋12或平面部101之垂線方向的洩漏磁通量較多,可知為對板金構件容易產生干擾的配置。 [0037] 另一方面,如本實施例般配置電抗器8之情況下,少漏方向之磁通以與控制基板蓋12或平面部101大致垂直的方式入射。亦即,產生於控制基板蓋12或平面部101之垂線方向的洩漏磁通量較少,可知為對板金構件不容易產生干擾的配置。 [0038] 另外,多漏方向及少漏方向不一定限定於互相大致正交,係依存於鐵心如何被形成等,例如少漏方向亦可以考慮成為洩漏磁通量為最大的方向中的洩漏磁通量之0.7倍以下的方向。 [0039] 如上述說明,依據本實施例,如圖7所示般把握電抗器8所產生的洩漏磁通之分布,按照該洩漏磁通對周圍之板金元件不容易產生干擾的方向來配置電抗器,據此則可以減低電抗器之洩漏磁通引起的雜音之產生。[0009] Hereinafter, embodiments of the present invention will be described with reference to the attached drawings. In the embodiment, although a freezer is described as an example of a machine having a control board and a reactor, as long as it has a control board and a reactor, and has a control board housing section or a control formed of a metal material, for example, The substrate cover is sufficient, and the machine is not particularly limited. [Embodiment 1] [0010] FIG. 1 is a front view of the freezer 1 of this embodiment, FIG. 2 is an X-X sectional view of the freezer 1, and FIG. 3 is an exploded perspective view of the control substrate 7 and the mounting structure of the control substrate 7. (2) The freezer 1 includes a plurality of storage rooms for storing food. In this embodiment, a refrigerator compartment 2, a vegetable compartment 3, and a freezer compartment 4 are provided. Inside the back surface of the freezer 1, for example, a compressor 5 driven by a motor capable of applying three-phase AC power, a fan motor 6 for circulating the cooling air in the freezer 1, a motor for the compressor 5 or a fan motor 6 A control board 7 for driving and controlling, an indoor temperature sensor that detects the temperature of each storage room, and a refrigeration cycle element are configured. [0011] The refrigeration cycle elements are composed of a compressor 5, a condenser, an expansion valve, an evaporator, and a refrigerant piping as is well known, and their constituent elements are mainly arranged on the back side and the side of the freezer 1. [0012] [Control Board Storage Unit 10] The freezer 1 includes a back plate 11 made of a metal material on the back side. A control board storage portion 10 is provided on the back plate 11. The control board storage portion 10 includes a flat portion 101 that can be formed as a region in which a part of the back plate 11 is recessed toward the front side, and is substantially parallel to a plane direction of a control substrate 7 described later; and a side that is substantially perpendicular to the flat portion 101.周 部 102。 102. The planar portion 101 is, for example, a quadrangular shape, and the side peripheral portion 102 may be, for example, a ring shape having a smaller size than the planar portion 101. In the vicinity of the frequency of the leakage magnetic flux generated by the reactor 8 to be described later, the side peripheral portion 102 has a shape that is less likely to generate resonance than the flat portion 101. The frequency of this leakage magnetic flux is the same as the frequency range of the AC current flowing into the reactor 8. [0013] In a region where the control substrate storage portion 10 is provided, the flat portion 101, the frame 9, the control substrate 7, the reactor 8, and the control substrate cover of the control substrate storage portion 10 are sequentially installed from the front side of the freezer 1. 12. As such, the control substrate storage portion 10 is located on one side of the reactor 8, and the control substrate cover 12 is located on the other side of the reactor 8. The control board storage section 10 and the control board cover 12 are formed of a metal material, for example, a sheet metal material, and are provided substantially parallel to the control board 7. [0014] The frame 9 may be formed of a resin material, the control substrate 7 is mounted on the control substrate arrangement portion 91, and the reactor 8 is mounted on the reactor arrangement portion 92. The reactor 8 is arranged in the reactor arrangement portion 92 so that a part of the reactor 8 overlaps with the inside of the control substrate 7, that is, it is arranged beside the control substrate 7. The reactor 8 is engaged with the claws provided in the frame 9. As described later, in this embodiment, the direction in which the leakage magnetic flux of the reactor 8 is large is set to the side peripheral portion 102 side. Therefore, it is preferable that the distance from the reactor 8 to the side peripheral portion 102 is longer than that of the reactor 8 to the plane. The distance between the parts 101 is long. [0015] The distance from the reactor 8 to the control substrate cover 12 and the distance from the reactor 8 to the plane portion 101 can be preferably set by adjusting the thickness of the frame 9. If the flat surface portion 101 is compared with the control substrate cover 12, the flat surface portion 101 is supported by a foamed heat insulation material or a vacuum insulation material. On the other hand, the control substrate cover 12 is disposed in a relatively free state. Therefore, the control substrate cover 12 is more likely to cause vibration. Based on this, in this embodiment, the distance from the reactor 8 to the control substrate cover 12 is set to be longer than the distance from the reactor 8 to the flat portion 101. In this way, the leakage magnetic flux to the control substrate cover 12 can be relatively reduced, and thus vibration can be suppressed. [0016] [Electrical System] FIG. 4 is a block diagram of an electrical system including a control board 7 according to this embodiment. [0017] The control board 7 is provided with a converter circuit 16, an inverter circuit 18, a control power circuit 19, a load control circuit 22 in the library, and a compressor control circuit 23. [0018] (Converter Circuit 16) The converter circuit 16 can convert the AC power of the commercial power source 13 into DC power. The converter circuit 16 includes two diodes 141 and 142, and two smoothing electrolytic capacitors 151 and 152 connected in series between the two diodes 141 and 142. [0019] The positive side of the diode 141 is electrically connected to one end of a reactor 8 disposed outside the control substrate 7, and the other end of the reactor 8 is electrically connected to one end of a commercial power source 13. The negative electrode side of the diode 141 is electrically connected to one end of the smoothing electrolytic capacitor 151. [0020] The other end of the smoothing electrolytic capacitor 151 is electrically connected to the other end of the commercial power source 13 and one end of the smoothing electrolytic capacitor 152. [0021] The positive side of the diode 142 is electrically connected to the other end of the smoothing electrolytic capacitor 152, and the negative side is electrically connected to the negative side of the diode 141 and one end of the reactor 8. [0022] The negative and positive sides of the diode 141 are electrically connected to the input terminals of the inverter circuit 18 and the control power circuit 19, respectively. The commercial power source 13 has, for example, an AC waveform of 100 V / 50 Hz. [0023] According to the converter circuit 16 thus configured, the AC power of the commercial power source 13 is converted into a high-voltage DC voltage 17. [0024] In order that the AC power of the commercial power source 13 is preferably formed into a DC high-voltage DC voltage 17, a smoothing electrolytic capacitor 15 is used. Only when the applied voltage from the commercial power source 13 is greater than the respective voltages of the smoothing electrolytic capacitors 151 and 152, a current flows into the smoothing electrolytic capacitor 15 in a form that compensates the discharge energy of the smoothing electrolytic capacitor 15, and therefore, it contains a high voltage. Sub-harmonic current waveform. Therefore, the reactor 8 provided as a component for suppressing higher harmonics is arranged in front of the smoothing electrolytic capacitor 15 (converter circuit 16). The mounting structure of the reactor 8 will be described later. [0025] (Inverter circuit 18) The inverter circuit 18 can issue a control signal for variable-speed driving of the compressor 5. In order to perform variable-speed driving of the motor of the compressor 5, it is necessary to apply an AC voltage waveform corresponding to the number of rotations. [0026] The high-voltage DC voltage 17 formed by the converter circuit 16 is converted into an arbitrary AC waveform by the inverter circuit 18. Which AC waveform is formed is controlled by a command from the compressor control circuit 23. [0027] As such, the high-voltage DC voltage 17 is converted into an arbitrary AC waveform by an inverter circuit 18 (three-phase AC generating circuit) using six semiconductor power elements such as IGBTs, and is output to the compressor 5 . [0028] (Control Power Circuit 19) The high-voltage DC voltage 17 is supplied not only to the inverter circuit 18, but also to the control power circuit 19. The control power circuit 19 steps down the high-voltage DC voltage 17 and generates a low-voltage DC voltage 20 of, for example, 12V or 5V. The low-voltage DC voltage 20 is used to drive the fan motor 6 or to supply the power supply voltage of the load control circuit 22 in the library to which information of the various temperature sensors 21 and temperature sensors 21 is input and which controls each part. [0029] (Reactor 8) FIG. 5 is a perspective view of (a) a reactor 8 and (b) a perspective view of an iron core 80 inside the reactor 8 in this embodiment. [0030] The reactor 8 includes an iron core 80, a winding wire 84 wound around the iron core 80, and a bobbin 83 that houses the winding wire 84. The iron core 80 includes an E-shaped iron core 81 and an I-shaped I iron core 82. The I iron core 82 is located on the right side of the "E" shape (the "≡" portion) of the E iron core 81 with a gap of 24, and faces the left portion of the "E" shape, that is, the rod portion (the "|" ) Extends in a direction substantially parallel. The two ends of the winding wire 84 respectively extend from the outer part of the reactor 8, and the through terminals can be installed in the control substrate 7, which should be connected to the winding wire 84. [0031] A gap 24 is formed between the E iron core 81 and the I iron core 82 to prevent a reduction in inductance caused by magnetic saturation. The gap 24 may be formed by air or a sheet. The sheet may use an insulator. [0032] It is easy to avoid magnetic saturation by the gap 24, but on the other hand, magnetic flux also easily leaks from the gap 24. If the leakage magnetic flux interferes with the control substrate cover 12 or the control substrate storage portion 10, the control substrate cover 12 or the control substrate storage portion 10 (particularly the flat portion 101) made of metal material will vibrate and become a main cause of noise. The leakage magnetic flux caused by the reactor 8 in this embodiment is anisotropic, and there are a direction in which the leakage magnetic flux is more (multiple leakage direction) and a direction in which there is less (the direction of less leakage). That is, the relationship of (leakage magnetic flux in the multiple leakage direction)> (leakage magnetic flux in the small leakage direction) holds. [0033] (Position relationship between the reactor 8 and the control substrate cover 12 and the flat portion 101) 中 In this embodiment, the reactor 8 is arranged independently of the control substrate 7, and further connected to the control substrate through a terminal of a winding 84 7, so the direction of the reactor 8 can be adjusted more freely. [0034] FIG. 6 is a comparative example, (a) shows a state where the multiple leakage directions of the reactor 8 are arranged substantially parallel to the perpendicular lines of the control substrate cover 12 and the flat portion 101, and (b) shows a leakage magnetic flux. A radar chart drawn in various directions relative to this state. FIG. 7 is a diagram of the present embodiment, (a) shows a state where the multiple leakage directions of the reactor 8 are arranged substantially parallel to the control substrate cover 12 and the flat portion 101, and (b) shows a state where the leakage magnetic flux is relative to the state Radar chart drawn in all directions. [0035] Among the core shapes used in the comparative example and this example, the directions toward the left and right sides of the “E” shape of the E core 81 (directions 1 and 5 in FIG. 6 (b), and the paper surface in FIG. 7 (b) The vertical direction of the leakage magnetic flux is in the direction of the "E" shape (3 and 7 directions in Fig. 6 (b), 3 and 7 directions in Fig. 7 (b)) and the vertical direction on the paper surface ( The paper surface in FIG. 6 is perpendicular to the direction, and directions 1 and 5 in FIG. 7 (b) are large. [0036] Therefore, when the reactor 8 is arranged as in the comparative example, the magnetic flux in the multiple leakage direction is incident substantially perpendicularly to the control substrate cover 12 or the flat portion 101. That is, the leakage magnetic flux generated in the perpendicular direction of the control board cover 12 or the flat portion 101 is large, and it can be seen that it is an arrangement that easily interferes with the sheet metal member. [0037] On the other hand, when the reactor 8 is arranged as in this embodiment, the magnetic flux in the direction of less leakage is incident substantially perpendicularly to the control substrate cover 12 or the flat portion 101. That is, the leakage magnetic flux generated in the perpendicular direction of the control substrate cover 12 or the flat surface portion 101 is small, and it can be seen that it is an arrangement that does not easily interfere with the sheet metal member. [0038] In addition, the multi-leakage direction and the little-leakage direction are not necessarily limited to being substantially orthogonal to each other, and depend on how the core is formed. For example, the direction of the small leakage may also be considered to be 0.7 of the leakage magnetic flux in the direction in which the leakage magnetic flux is the largest Times below the direction. [0039] As described above, according to this embodiment, as shown in FIG. 7, the distribution of the leakage magnetic flux generated by the reactor 8 is grasped, and the reactance is arranged in a direction in which the leakage magnetic flux does not easily interfere with the surrounding sheet metal components. According to this, the noise generated by the leakage magnetic flux of the reactor can be reduced.