TWI648596B - Material for lithography - Google Patents

Abstract

This disclosure relates to materials used in the lithography process, which include materials having one of the following chemical structures: or or or Where R _f represents the first spacer; C represents a carbon-containing group; Ar represents a phenyl-containing group; Re represents a second spacer; P represents a polar group; m represents an integer from 1 to 6; n represents an integer from 1 to 20 .

Description

Materials for lithography

This disclosure relates to a method for manufacturing a semiconductor device and materials used in a lithography process.

The semiconductor integrated circuit (IC) industry has experienced rapid growth over the past few decades. Advances in semiconductor materials and design have resulted in smaller and more precise circuits. These advances have allowed process and manufacturing-related technologies to undergo technical advances. As the minimum device size shrinks, the challenge of reducing pattern collapsing, pattern spalling, and loss of thickness increases.

The present disclosure relates to a method of manufacturing a semiconductor device. This method includes exposing the photoresist layer to a radiation source and applying a hardener to the photoresist layer. Therefore, after the hardener is applied, the first portion of the photoresist layer has a higher glass transition temperature (Tg) or higher mechanical strength than the second portion of the photoresist layer.

Another method for manufacturing a semiconductor device includes exposing a photoresist layer to a radiation source, developing the photoresist layer to form a feature, applying a hardener to the above feature, wherein the hardener increases the glass transition temperature of the above feature, and applying a smoothing agent ( smoothing agent) to the above feature, wherein the smoothing agent reduces the glass transition temperature of the above feature.

Materials used in the lithography process include materials having a molecular weight in the range of about 150 channels to 3,000 channels. This material includes a spacer group R _f , a carbon-containing group and a reactive group, or a spacer group R _f , a carbon-containing group, a polar group and a reactive group, or a spacer group R _f , a phenyl group, a polar group and a reactive group .

100‧‧‧Photoresist exposure process

110‧‧‧ substrate

120‧‧‧Photoresistive layer

120A‧‧‧light-colored area

120B‧‧‧ Dark Area

120L‧‧‧hardened top layer

130‧‧‧light source

135‧‧‧ radiation beam

140‧‧‧Mask

150‧‧‧ reagent

160‧‧‧Photoresist layer removed

200‧‧‧ Method for manufacturing semiconductor device

202, 204, 206A, 206B ‧‧‧ The steps of a method for manufacturing a semiconductor device

300‧‧‧ semiconductor device

310‧‧‧Exposure area

320‧‧‧Unexposed area

410‧‧‧hardener

510‧‧‧Photoresistance

1000‧‧‧ Method of lithography process

1002 ~ 1008‧‧‧lithography process steps

1200‧‧‧Photoresistance characteristics

1200S‧‧‧wave contour

1200T‧‧‧Smooth contour

1300‧‧‧Smoothing agent

The embodiments of the present disclosure will be described in detail below with the accompanying drawings. It should be noted that the following illustrations are not drawn to scale according to industrial standards. In fact, the size of the components may be arbitrarily enlarged or reduced for clarity. Showing the characteristics of this disclosure. In the description and drawings, unless otherwise specified, the same or similar elements will be represented by similar symbols.

FIG. 1 is a schematic diagram of a photoresist exposure process in the embodiment disclosed in this disclosure.

FIG. 2 is a flowchart of a method for manufacturing a semiconductor device in various embodiments according to the present disclosure.

3 and 4A are cross-sectional views of the semiconductor device at various manufacturing stages according to the method of FIG. 2.

Figures 4R, 4C, 4D, 4E, and 4F are schematic views of the hardener in some embodiments.

5, 6A, and 6B are cross-sectional views of a semiconductor device at various manufacturing stages according to the method of FIG. 2.

FIG. 7 is a flowchart of a method for manufacturing a semiconductor device in various embodiments according to the present disclosure.

8A, 8B, 9A, 9B, 9C, and 9D are cross-sectional views of the semiconductor device at various stages of manufacturing according to the method of FIG. 7.

10A, 10B, 10C, and 10D are schematic diagrams of a smoothing agent in some embodiments.

It should be understood that many different implementation methods or examples are provided below to implement different features of various embodiments. Examples of specific elements and their arrangements are described below to illustrate the present disclosure. Of course, these are just examples and should not be used to limit the scope of this disclosure. For example, when it is mentioned in the description that the first element is formed on a second element, it may include an embodiment in which the first element is in direct contact with the second element, or it may include other elements formed on the first and An embodiment between the second elements, wherein the first element is not in direct contact with the second element. In addition, repeated reference numerals or signs may be used in different embodiments. These repetitions are merely for the purpose of simply and clearly describing the present disclosure, and do not represent a specific relationship between the different embodiments and / or structures discussed.

The present disclosure provides a lithographic method for manufacturing a semiconductor device. The terms lithography, immersion lithography, light lithography, and optical lithography are used interchangeably in this disclosure. Lithography is used in microfabrication processes such as semiconductor manufacturing to selectively remove portions of a film or substrate. This process utilizes light to transfer a pattern (eg, a geometric pattern) from a photomask to a light-sensitive layer (eg, a photoresist) over a substrate. Light causes chemical changes in the exposed areas of the light-sensitive layer, which can increase or decrease the solubility of the exposed areas. If the solubility of the exposed area becomes high, the light-sensitive layer is called a positive photoresist. If the solubility of the exposed area becomes low, the photosensitive layer is called a negative photoresist. The baking process may be performed before or after exposing the substrate, such as a post-exposure bake (PEB) process. The developing process uses a developing solution to produce an exposed pattern on the substrate, and selectively removes exposed or unexposed areas. Then, a series of chemical treatments can engrave / etch the exposed pattern to the substrate (or material layer), and the patterned photoresist protects the bottom layer of the substrate (or material layer). Alternatively, metal deposition, ion implantation, or other Process. Finally, a suitable reagent removes (or removes) the remaining photoresist, and the substrate is ready for the entire process to repeat the next stage of circuit fabrication. In complex integrated circuits (eg, advanced CMOS), the substrate can go through several lithographic cycles.

FIG. 1 is an explanatory diagram of a photoresist exposure process 100. The process 100 includes covering the photoresist layer 120 above the substrate 110. In some embodiments, the substrate 110 includes silicon. The substrate 110 may replace or additionally include other suitable semiconductor materials, such as: germanium (Ge), silicon germanium (SiGe), silicon carbide (SiC), gallium arsenide (GaAs), diamond, indium arsenide (InAs), Indium phosphide (InP), silicon germanium carbide (SiGeC), gallium indium phosphide (GaInP). The substrate 110 may also include various features, such as various doped regions, shallow trench isolation regions (STIs), source / drain features, gate stacks, dielectric features, and / or multilevel interconnects.

Then, the photoresist layer 120 passes through the photomask (mask or middle mask) 140 and is exposed to the radiation beam 135 from the light source 130. The photomask 140 has a predefined pattern. The exposure process will result in a photoresist pattern, including multiple exposed areas (eg, exposure features) and multiple unexposed areas. FIG. 1 shows the photoresist layer 120 having different shades. The region 120A shows a region in which no acid is generated because the light source 130 is blocked. In contrast, the area 120B indicates an area in which a chemical reaction of acid generation is caused due to exposure to the light source. The light source 130 may be various light sources, including a deep ultraviolet (DUV) light source. In one example, the light source 130 may be an extreme ultraviolet (EUV) light source. In some examples, the other light source 130 may be e-beam writing. Alternatively, the exposure process may utilize other radiation beams such as ion beams, X-rays, and other suitable exposure energies. In addition, in order to harden and dry the photoresist layer 120, pre-bake of the photoresist layer 120 may be performed before the exposure process.

During exposure, when the photoresist layer 120 is a positive photoresist (ie, the acid will decompose a polymer that can be decomposed by the acid, making the polymer more hydrophilic), the solubility of the photoresist layer 120 increases. Alternatively, when the photoresist layer 120 is a negative type photoresist (ie, the acid will catalyze a crosslinked polymer that can be catalyzed by the acid, making the polymer more hydrophobic), the solubility of the photoresist layer 120 decreases. Alternatively, the photoresist layer 120 may be subjected to a post-exposure baking (PEB) process, and then developed through any suitable process to form a pattern on the photoresist layer 120.

Then, a developing solution may be used to remove a part of the photoresist layer 120. The developer can remove the exposed or unexposed portions depending on the photoresist type (eg, positive or negative). If the photoresist layer 120 includes a negative photoresist, the exposed portion will not be dissolved by the developing solution and remain above the substrate. If the photoresist layer 120 is a positive type photoresist, the exposed portion will be dissolved by the positive developing solution, and the unexposed portion will be left. If the photoresist layer 120 is a positive type photoresist and is developed by a negative developing solution, the unexposed portion will be dissolved and the exposed portion will remain. The remaining exposed portions (or unexposed portions) define the pattern.

Although existing lithography methods are usually sufficient to meet the desired goals, they are still not completely satisfactory in all respects. For example, the photoresist layer 120 includes a basic water-soluble component such as a hydroxyl group (for example: -OH) or a carboxyl group (for example: -COOH). When developed by a developing solution, the unexposed pattern is partially dissolved. This problem is called swelling, which can cause poor line-width-variation, film damage, and photoresist pattern collision. The present disclosure provides a lithography process with a hardening process to reduce poor line width variations, film damage, and photoresist pattern collisions.

According to some embodiments of the present disclosure, FIG. 2 shows a flowchart of a method 200 for manufacturing a semiconductor device 300. In various embodiments, this disclosure uses Duplicate numbers and / or letters. Unless otherwise stated, this repetition is for simplicity and clarity, so that repeated reference numerals and / or letters indicate similar features in the various embodiments.

Referring to FIG. 2 and FIG. 3, the method 200 starts at step 202, and a photosensitive layer such as a photoresist layer 120 is deposited on the substrate 110, for example, using a spin coating technique. Next, the method 200 proceeds to step 204 to expose the photoresist layer 120 to the radiation source. The photoresist layer 120 passes through a photomask (a mask or a middle mask) 140 having a predefined pattern, and is exposed to a radiation beam (for example, the radiation beam 135) from a light source (for example, the light source 130). The exposure process forms a latent image (or pattern) in the photoresist layer 120 and includes a plurality of exposed areas 310 and a plurality of unexposed areas 320. FIG. 3 shows the photoresist layer 120 having different shades. The dark area 120B represents the exposed area 310, which causes a chemical reaction caused by the acid, while the light colored area 120A shows the unexposed area 320, which blocks the light source 130, and therefore does not generate acid. In the exposed area 310, the radiation beam 135 reaches the photoresist layer 120 to generate an effective solubility conversion between the exposed area 310 and the unexposed area 320.

The method 200 has two paths after step 204, which are indicated by the suffixes "A" and "B", respectively. These two paths are discussed below. Referring to FIG. 2 and FIG. 4A, for path A, the method 200 continues to step 206A, and a hardening treatment with a hardener 410 is applied to the photoresist layer 120. The hardening process may include performing a wet process in a wet process station or chamber using an aqueous solution mixture having a hardener 410. The concentration of the hardener 410 ranges from about 0.1% to 50% of the aqueous solution.

During the hardening process, the hardener 410 reacts with the top of the photoresist layer 120. Specifically, the hardener reacts with the top of the photoresist layer 120 to increase the surface density, glass transition temperature (Tg), or mechanical strength of the top, thereby forming a hardened top layer 120L. Therefore, the hardened top layer 120L is more directly below the second part of the photoresist layer. Have a higher glass transition temperature.

As shown in FIG. 4B, in one example, the hardener 410 has a chemical structure including at least one first spacer R _f1 between parentheses. The first spacer R _f1 may include an aromatic carbocyclic ring having a carbon chain of 1 to 12, a linear or cyclic alkyl group, an alkoxy group, a fluoroalkyl group, a fluoroalkoxy group, an olefin, an alkyne, a hydroxyl group, a ketone, Aldehydes, carbonates, carboxylic acids, esters, ethers, amines, amines, imines, amines, azides, nitrates, nitriles, nitrites or thiol spacers. The first spacer R _{f1 is} connected to a polar group (P) _y , where y is an integer of at least two. The polar group P may include: -Cl, -Br, -I, -NO ₂ , -SO _3- , -H-, -CN, -NCO, -OCN, -CO _2- , -OH, -OR *,- OC (O) CR *, -SR, -SO ₂ N (R *) ₂ , -SO ₂ R *, SOR, -OC (O) R *, -C (O) OR *, -C (O) R *, -Si (OR *) ₃ , -Si (R *) ₃ , epoxy group, here, R * is H, a non-branched or branched chain, cyclic or acyclic saturated or unsaturated Alkyl or alkenyl or alkynyl. Among them, the hardener is preferably NHR1R2, and R1 / R2 includes H, alkyl, alkyne, alkyl, alkoxy, fluoroalkyl, fluoroalkoxy, olefin, alkyne, hydroxyl, ketone, aldehyde, carbonate, carboxy Acids, esters, ethers, amidines, amines, imines, amidines, azides, nitrates, nitriles or nitrites.

As shown in FIG. 4C, in another example, the hardener 410 has another chemical structure, including a first spacer R _f connected to a linker (L) _z between brackets, where z is at least 2 Integer. The linking group L may include: -NH ₂ , -OH, -SH, -COOH, -COH, -COOR, OCOR, COR, anhydride, epoxy group, en group, R'OR, R'OOR, R'OSOOR, RX, where R * is H, a non-branched or branched, cyclic or acyclic, saturated or unsaturated alkyl or alkenyl or alkynyl. X-based halide.

The hardener may also include a surfactant. In some embodiments, The concentration of the surfactant is about 0.1% to 10% of the aqueous solution.

The hardener 410 may also include a solvent or an aqueous solution. In some embodiments, the concentration of hardener 410 is about 0.1% to 50% of the solvent.

As shown in FIGS. 4D-4F respectively, specific examples of the hardener 410 may include, but are not limited to, anthracene-1,8-dicarboxylic acid, diethanolamine, acetone-1,3-dicarboxylic acid, or ethylenediamine. Other forms of hardener 410 may be used in accordance with the principles described herein.

In some embodiments, the polar group (P) _{y of the} hardener 410 is absorbed or reacted to a developable functional group (eg, -OH or -COOH) on top of the photoresist layer 120 to form a hardened outer layer 120L. In some embodiments, the hardened top layer 120L is formed by an internal molecular force between the hardener 410 and the top of the photoresist layer 120, such as van der Waals force, hydrogen bonding, electronic force, and ionic force. For example, when the polar group (P) _y contains a hydroxyl group and the surface of the photoresist layer 120 contains a carboxyl group, the hydroxyl units tend to be absorbed by the carboxyl group due to strong hydrogen bonding between each other.

In some embodiments, the hardened top layer 120L is covalently bonded to form, for example, alkylation, condensation, carboxylation, esterification, and / or amination reactions. For example, when the linking group (L) _z contains a hydroxyl group and the surface of the photoresist layer 120 contains a phenol group, the hydroxyl units tend to react with the phenol group due to strong hydrogen bonding between each other, so that the hardener 410 and light A covalent bond is formed between the outer layers of the resist layer 120.

Referring to FIG. 2 and FIG. 5, continue along the path A of the method 200 to step 208A, and develop the photoresist layer 120 having the hardened top layer 120L to form a photoresist feature 510. A developing solution is used to remove a portion of the photoresist layer 120. An example of a developing solution is tetramethylammonium hydroxide (TMAH). Any concentration gradient of TMAH developer can be utilized, such as about 2.38% TMAH developer. The developer can remove the exposed or unexposed parts according to the photoresist type. For example, if the photoresist layer 120 includes negative light Resistance, the exposed portion will not be dissolved by the developing solution, and the substrate 110 remains. If the photoresist layer 120 includes a positive type photoresist, the exposed portion will be dissolved by the developing solution, and an unexposed portion will remain. Then, the semiconductor device 300 may perform a cleaning process such as deionized (DI) water cleaning. The cleaning process removes the remaining particles. In addition, before the photoresist layer 120 is developed, a post-exposure baking (PEB) process is performed.

During the development process, the hardened top layer 120L slows down the attack of the developing solution (such as TMAH) on the photoresist layer 120. Since the hardened top layer 120L slows down the development of the photoresist layer 120, during the formation of the photoresist feature 510, less film loss and less line width variation occur.

As discussed above, the method 200 has two paths after step 204, which are indicated by the suffixes "A" and "B", respectively. Next, it is the path B. Referring to FIGS. 2 and 6A-6B, the method 200 proceeds to step 206B, and the in-situ hardening process with the hardener 410 is used to develop the photoresist layer 120 to form the photoresist feature 510. The in-situ hardening process may include incorporating the hardener 410 into the developing solution by means such as blending. That is, in the path B, the hardener 410 is not separately applied before the photoresist layer 120 is developed. Instead, the hardener 410 is part of the developing solution applied to the photoresist layer 420.

During the development process, the hardener 410 is absorbed by and / or reacts with the photoresist layer 120, which is similar in many respects to the discussion of FIG. 4 described above. Since the hardener 410 has a multipolar group P, it is absorbed by a functional group (for example, -OH or -COOH) on the top layer of the photoresist layer 120 and / or reacts with the functional group. By promoting a lower affinity between the surface of the photoresist layer 120 and the developing solution, the hardener 410 reduces the attack of the developing solution (eg, TMAH) above the photoresist layer 120. As a result, the mechanical strength of the photoresistive feature 510 is increased, and thus the collapse.

Additional steps may be performed before, during, or after the method 200, and in other embodiments of the method 200, some of the above steps may be replaced or removed. For example, in path A, a hardening process is performed after step 206A and before step 208A. The hardening process may include ultraviolet (UV) hardening, plasma hardening, radiation hardening, baking, or other suitable processes.

FIG. 7 is a flowchart of a method 1000 of another lithography process for manufacturing the semiconductor device 300. In various embodiments, the present disclosure uses repeated reference numerals and / or letters. Unless otherwise stated, this repetition is for simplicity and clarity, so that repeated reference numerals and / or letters indicate similar features in the various embodiments. Method 1000 begins at steps 1002 and 1004, which are similar to steps 202 and 204 of method 200. For simplicity and clarity, the descriptions of steps 202 and 204 described above are applicable to steps 1002 and 1004, respectively, and will not be repeated here.

Next, referring to FIG. 7 and FIG. 8A, the method 1000 continues to step 1006 to develop the photoresist layer 120 to form a photoresist feature 1200. The development process is similar in many respects to the discussion of Figure 5 above. As discussed above, the photoresist layer 120 generally includes some basic water-soluble components such as a hydroxyl group (for example: -OH) or a carboxyl group (for example: -COOH). During the development process, these alkaline water-soluble components sometimes cause the unexposed portions of the pattern to be partially dissolved (or swelled) by the developer. As shown in FIG. 8, an unexpected partial dissolution (or swelling) of the unexposed portion of the photoresist layer 120 causes the photoresist feature 1200 to have a wavy profile / side wall 1200S. The present disclosure provides a smoothing process with adjustable to reduce the degree of 1200 contours of photoresist features.

Please refer to Figures 7 and 9A-9B, method 1000 continues to step 1008. Apply an adjustable smoothing process to the photoresist feature 1200 to reduce the degree of wavy contour. The adjustable smoothing process includes applying a hardener 410 and a smoother 1300 to a photoresist feature 1200. In this embodiment, the smoothing agent 1300 is selected to reduce the glass transition temperature (Tg) of the photoresist layer 120 to soften the photoresist layer 120. This softening process smoothes out the sidewall profile 1200S. On the other hand, the hardener 410 increases the glass transition temperature (Tg) or mechanical strength of the photoresist layer 120 to harden the photoresist layer 120 to prevent the photoresist feature 1200 from collapsing.

As shown in FIG. 9B, in consideration of the characteristics of the photoresist feature 1200 such as the critical size and aspect ratio, an appropriate balance between the smoothing agent 1300 and the hardener 410 is selected to achieve a degree of reducing the contour of the wavy side wall so as not to cause Photoresist feature 1200 collapses smooth contour 1200T. In the present embodiment, the molecular weight of the smoothing agent 1300 is in the range of about 150 to 3,000 channels.

In some embodiments, as shown in Figure 9A, a hardener 410 and a smoothing agent 1300 are applied to the photoresist feature 1200 at the same time, such as mixing them together. Since the highly polar functional group P of the hardener 410 has a high affinity for the surface of the photoresist layer 120, it tends to absorb to the photoresist layer 120 first. In some embodiments, as shown in Figures 9C-9D, the hardener 410 and the smoothing agent 1300 are applied separately, so that the hardener 410 is first applied to the photoresist feature 1200 and then the smoothing agent 1300 is applied. Then, during the adjustable smoothing process, the hardener 410 and the smoothing agent 1300 are removed in situ.

As shown in FIG. 10A, the basic structure of the smoothing agent 1300 includes: the second spacer R _{f2 is} connected to the carbon-containing group (C) _m between the brackets. The second spacer R _f2 includes: an aromatic carbocyclic ring having a carbon chain of 1 to 4, a linear or cyclic alkyl / alkoxy / fluoroalkyl / fluoroalkoxy chain, or a carbon chain of 1 to 4 4 linear or cyclic alkenes, alkynes, hydroxyls, ketones, aldehydes, carbonates, carboxylic acids, esters, ethers, amidines, amines, imines, amidines, azides, nitriles, or,- SO _3- , -CO _2- . Here, m and n are two integers. In some embodiments, m is 1 to 6 and n is 1 to 20. The structure shown in Figure 10A is as follows:

Referring to FIG. 10A again, the carbon-containing group (C) _{m is} connected to the reactive group Re. The reactive group Re includes: H, OH, a halide, or an aromatic carbocyclic ring having a carbon chain of 5-12, a linear or cyclic alkyl group having a carbon chain of 1-12, an alkoxy group, a fluoroalkyl group, and a fluorine group. Alkoxy, alkenyl, alkynyl, hydroxyl, aldehyde, carboxyl, amido, amine, imine, amido, azide, nitrile or thiol.

The second spacer R _f2 and the reactive group Re may also include: -Cl, -Br, -I, -NO ₂ , -SO _3- , -H, -CN, -NCO, -OCN, -CO ₂ -,- OH, -OR *, -OC (O) CR *, -SR, -SO ₂ N (R *) ₂ , -SO2R *, SOR, -OC (O) R *, -C (O) OR *,- C (O) R *, -Si (OR *) ₃ , -Si (R *) ₃ , epoxy group, where R * is H, a non-branched or branched, cyclic or acyclic Saturated or unsaturated alkyl or alkenyl or alkynyl.

As shown in FIG. 10B, the smoothing agent 1300 may have another chemical structure including a second spacer R _f2 connected to a phenyl group-containing Ar between parentheses. The Ar group may include an unsaturated hydrocarbon having 2 to 16 carbon atoms. The Ar group is attached to the reactive group Re. The structure shown in Figure 10B is as follows:

As shown in FIG. 10C, the smoothing agent 1300 may have another chemical structure, including a second spacer R _f2 connected to a carbon-containing group (C) _m and a reactive group Re between parentheses. The reactive group Re in parentheses is connected to the polar group P. The carbon-containing group (C) _{m is} connected to two other reactive groups Re. The structure shown in Figure 10C is as follows:

As shown in FIG. 10D, the smoothing agent 1300 may have another chemical structure, including a second spacer R _f2 connected to an Ar group and a reactive group Re between parentheses. The reactive group Re in parentheses is connected to two polar groups P. The Ar group is connected to two other reactive groups, Re. Additional steps may be performed before, during, or after method 1000, and in other embodiments of method 1000, some of the above steps may be replaced or removed. For example, after step 1008, a hardening process is performed to the photoresist feature 1200 to improve the smoothing effect. The hardening process may include ultraviolet (UV) hardening, plasma hardening, radiation hardening, baking, or other suitable processes. For example, after step 1008, another step of method 1000 may include performing a second development process to enhance the smoothing effect. The structure shown in Figure 10D is as follows:

Based on the above discussion, the present disclosure provides a method for a developing process. This method uses a hardening process to the photoresist layer and a smooth process to the photoresist feature. This method demonstrates reduced line width roughness (LWR), photoresist feature collapse, and reduced film damage. The adjustable smoothing process realizes the smoothness of the sidewall profile of the photoresist feature and also strengthens the efficiency of the photoresist mechanism.

The present disclosure relates to a method of manufacturing a semiconductor device. The method includes exposing the photoresist layer to a radiation source, and applying a hardener to the photoresist layer. Therefore, after the hardener is applied, the first part of the photoresist layer has a higher glass transition temperature or higher mechanical strength than the second part of the photoresist layer.

Another method of manufacturing a semiconductor device includes exposing a photoresist layer to a radiation source, developing the photoresist layer to form a feature, applying a hardener to the above feature, wherein the hardener increases the glass transition temperature of the above feature, and applying a smoothing agent to The above feature, wherein the smoothing agent reduces the glass transition temperature of the above feature.

Materials used in the lithography process include materials having a molecular weight in the range of about 150 channels to 3,000 channels. This material includes a spacer R _f , a carbon-containing group and a reactive group, or a spacer R _f , a carbon-containing group, a polar group, and a reactive group, or a spacer R _f , a phenyl group, a polar group, and a reactive group.

The foregoing text summarizes the features of many embodiments so that those having ordinary skill in the art can better understand the various aspects of the present disclosure. This technique Those with ordinary knowledge in the field of surgery should understand that they can easily design or modify other processes and structures based on this disclosure, and thereby achieve the same purpose and / or achieve the same as the embodiments described in this disclosure. advantage. Those of ordinary skill in the art should also understand that these equivalent structures do not depart from the spirit and scope of the invention disclosed herein. Various changes, substitutions, and modifications can be made in the disclosure without departing from the spirit and scope of the disclosure.

Claims (4)

A material used in the lithography process, wherein the material has the following chemical structure:

Where: R _f represents the first spacer, which is selected from the group consisting of linear or cyclic alkyl / alkoxy / fluoroalkyl / fluoroalkoxy chains with carbon chains 1 to 4 , Linear or cyclic alkenes, acetylenes, ketones, carbonates, esters, ethers, amides, amines, imines, amides, azides, -SO _3- , -CO _2- ; C stands for carbon; Ar stands for phenyl group, wherein the Ar group includes unsaturated hydrocarbons having 2 to 16 carbon atoms; Re stands for reactive group, where Re is selected from the group consisting of: having a carbon chain 5-12 aromatic carbocycles, linear or cyclic alkyl groups having 1-12 carbon chains, alkoxy groups, fluoroalkyl groups, fluoroalkoxy groups, alkenyl groups, alkynyl groups, aldehyde groups, carboxyl groups, acetyl groups Amino, amine, imino, amide imino, azide, nitrile, -Cl, -Br, -I, -NO ₂ , -H, -NCO, -OCN, -OH, -OC ( O) CH ₃ , -SH, -SO ₂ NH ₂ , -SO ₂ H, -SOH, -OC (O) H, -C (O) OH, -C (O) H, -Si (OH) ₃ , -SiH ₃ ; and n represents an integer from 1 to 20. A material used in the lithography process. The material has the following chemical structure:

Where: R _f represents the first spacer, which is selected from the group consisting of linear or cyclic alkyl / alkoxy / fluoroalkyl / fluoroalkoxy chains with carbon chains 1 to 4 , Linear or cyclic alkenes, acetylenes, ketones, carbonates, esters, ethers, amides, amines, imines, amides, azides, -SO _3- , -CO _2- ; C represents carbon; Re represents reactive group, wherein Re is selected from the group consisting of: aromatic carbon ring with carbon chain 5-12, linear or cyclic alkane with carbon chain 1-12 Group, alkoxy group, fluoroalkyl group, fluoroalkoxy group, alkenyl group, alkynyl group, aldehyde group, carboxyl group, amide group, amine group, imine group, amide imide group, azido group, nitrile group,- Cl, -Br, -I, -NO ₂ , -H, -NCO, -OCN, -OH, -OC (O) CH ₃ , -SH, -SO ₂ NH ₂ , -SO ₂ H, -SOH,- OC (O) H, -C (O) OH, -C (O) H, -Si (OH) ₃ , -SiH ₃ ; P is selected from the group consisting of: -Cl, -Br, -I , -NO ₂ , -H, -CN, -NCO, -OCN, -OH, -OC (O) CH ₃ , -SH, -SO ₂ NH ₂ , -SO ₂ H, -SOH, -OC (O) H, -C (O) OH, -C (O) H, -Si (OH) ₃ , -SiH ₃ ; m represents an integer from 1 to 6; and n represents an integer from 1 to 20. A material used in the lithography process. The material has the following chemical structure:

Where: R _f represents the first spacer, which is selected from the group consisting of linear or cyclic alkyl / alkoxy / fluoroalkyl / fluoroalkoxy chains with carbon chains 1 to 4 , Linear or cyclic alkenes, acetylenes, ketones, carbonates, esters, ethers, amides, amines, imines, amides, azides, -SO _3- , -CO _2- ; C stands for carbon; Ar stands for phenyl group, wherein the Ar group includes unsaturated hydrocarbons having 2 to 16 carbon atoms; Re stands for reactive group, where Re is selected from the group consisting of: having a carbon chain 5-12 aromatic carbocycles, linear or cyclic alkyl groups having 1-12 carbon chains, alkoxy groups, fluoroalkyl groups, fluoroalkoxy groups, alkenyl groups, alkynyl groups, aldehyde groups, carboxyl groups, acetyl groups Amino, amine, imino, amide imino, azide, nitrile, -Cl, -Br, -I, -NO ₂ , -H, -NCO, -OCN, -OH, -OC ( O) CH ₃ , -SH, -SO ₂ NH ₂ , -SO ₂ H, -SOH, -OC (O) H, -C (O) OH, -C (O) H, -Si (OH) ₃ , -SiH ₃ : P is selected from the group consisting of: -Cl, -Br, -I, -NO ₂ , -H, -CN, -NCO, -OCN, -OH, -OC (O) CH ₃ , -SH, -SO ₂ NH ₂ , -SO ₂ H, -SOH, -OC (O) H, -C (O) OH, -C (O) H, -Si (OH) ₃ , -SiH ₃ ; And n represents an integer from 1 to 20. The material used in the lithography process according to any one of items 1 to 3 of the patent application range, wherein the molecular weight of the material is 150 to 3000 Daltons.