TWI647826B - High infrared transmittance structure - Google Patents

Abstract

A high-infrared transmittance structure has a substrate, an infrared ink layer, and an anti-reflection layer. The infrared ink layer is formed on the substrate, and the anti-reflection layer is formed on the infrared ink layer to improve the infrared transmittance.

Description

High infrared transmittance structure

The invention relates to a structure with high infrared transmittance, and in particular to a structure for improving infrared transmittance of electronic product detection equipment.

With the rapid development of electronic products, the security and privacy protection of electronic products have become more important. At present, some electronic products can be unlocked through iris recognition and face recognition unlocking. In addition to using the unity of biometrics, it is also necessary to be able to accurately determine the differences between different users to avoid misjudgment and cause electronic products. Risk of data leakage.

Relevant iris recognition and face recognition technologies generally use infrared lenses to detect and identify the characteristics of the user's iris or face. The electronic products will automatically be compatible with the characteristics of authorized holders stored in the electronic products. Unlock.

Conversely, if the detected features of the user's iris or face do not match the characteristics of the authorized holder of the internal storage in the electronic product, the electronic product cannot be unlocked to avoid data leakage.

As a result, the requirements for the sensitivity and distance of electronic products for infrared detection are increasing. In addition, the appearance needs to be able to achieve the effect of hiding the infrared detection hole to improve the appearance of the electronic product and maintain the privacy of the detection device.

One embodiment of the present invention is to provide a high infrared transmittance structure, which can improve infrared transmittance.

According to one or more embodiments of the present invention, a high infrared transmittance structure includes a substrate, an infrared ink layer, and an anti-reflection layer. The infrared ink layer is formed on the substrate, and the anti-reflection layer is formed on the infrared ink layer to improve the infrared transmittance.

In one embodiment, the substrate has a light transmittance of greater than 80% at a wavelength of 380 nm to 1000 nm.

In one embodiment, the infrared ink layer includes a resin, a pigment, and a hardener. The infrared ink layer has a light transmittance of less than 15% at a wavelength of 550 nm and a light transmittance of more than 75% at a wavelength of 850 nm. Transmission rate.

In one embodiment, the anti-reflection layer is formed by an anti-reflection film.

In one embodiment, the anti-reflection layer is formed by stacking one or more high refractive index materials and one or more low refractive index materials on each other.

In one embodiment, the anti-reflection layer has a light reflectivity of less than 4% at a wavelength of 380 nm to 1000 nm.

In one embodiment, the refractive indices of the substrate and the infrared ink layer are approximately between Between 1.4 and 1.6.

In one embodiment, one side of the substrate and the other side of the anti-reflection layer are directly exposed to the air.

Therefore, the high-infrared transmittance structure of the present invention can effectively improve the infrared transmittance and effectively increase the sensitivity and detection distance of electronic products to the infrared detection function. In addition, with the low transmittance of visible light, the hidden effect of the infrared detection hole can be more maintained.

100‧‧‧High infrared transmittance structure

110‧‧‧ substrate

120‧‧‧ infrared ink layer

130‧‧‧Anti-reflective layer

140‧‧‧Shading element

142‧‧‧ opening

210‧‧‧ substrate

200‧‧‧High infrared transmittance structure

220‧‧‧ infrared ink layer

230‧‧‧Anti-reflective film

240‧‧‧light-shielding element

242‧‧‧ opening

310‧‧‧ray transmittance curve of the conventional structure

Light transmission curve of 320‧‧‧ high infrared transmittance structure

FIG. 1 is a schematic diagram of a preferred embodiment of a high infrared transmittance structure disclosed in the present invention.

FIG. 2 is a schematic diagram of another preferred embodiment of a high-infrared transmittance structure disclosed in the present invention.

FIG. 3 is a schematic diagram showing measurement data of light transmittance of a high-infrared transmittance structure disclosed in the present invention.

In the following, a plurality of embodiments of the present invention will be disclosed graphically. For the sake of clarity, many practical details will be described in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, in order to simplify the drawings, some conventional structures and components will be shown in the drawings in a simple and schematic manner.

Unless otherwise defined, all words (including technical and scientific terms) used herein have their ordinary meanings, which can be understood by those familiar with the art. Furthermore, the definitions of the above vocabularies in commonly used dictionaries should be interpreted in the content of this specification as meanings consistent with the fields related to the present invention. Unless specifically defined, these terms will not be interpreted as idealized or overly formal.

Referring to FIG. 1, FIG. 1 is a schematic diagram of a preferred embodiment of a high-infrared transmittance structure disclosed in the present invention.

A high-infrared transmittance structure 100 includes a substrate 110, an infrared ink layer 120, and an anti-reflection layer 130. The infrared ink layer 120 is formed on the substrate 110, and the anti-reflection layer 130 is formed on the infrared ink layer 120 to improve infrared transmittance. The other side of the substrate 110 with respect to the infrared ink layer 120 is exposed to the air.

The substrate 110 has a light transmittance of more than 80% at a wavelength of 380 nm to 1000 nm. The infrared ink layer 120 is formed of a resin, a pigment, and a hardener. In one embodiment, the infrared ink layer 120 has a light transmittance of less than 15% at a wavelength of 550 nm, and has a light transmittance of greater than 75% at a wavelength of 850 nm.

As shown in FIG. 1, the anti-reflection layer 130 is formed by stacking one or more high refractive index materials and one or more low refractive index materials on each other. Preferably, the anti-reflection layer 130 has a light reflectivity of less than 4% at a wavelength of 380 nm to 1000 nm. In addition, the aforementioned anti-reflection layer 130 is directly attached to the infrared ink layer 120, and the other side is exposed to the air.

In one embodiment, the high infrared transmittance structure 100 further includes A light-shielding element 140 is disposed on the substrate 110 and has an opening 142. The infrared ink layer 120 is disposed in the opening 142.

In one embodiment, the anti-reflection layer 130 is formed of eight layers of a high refractive index material and a low refractive index material, which can provide a reflectance of about 1.2% at a wavelength of 380 nm to 900 nm. Among them, the first, third, fifth, and seventh layers are formed of high refractive index materials, and their thicknesses are 6.01 nm, 21.94 nm, 41.75 nm, and 29.07 nm, respectively. The quarter-wave optical thickness (QWOT; Quarter-Wave Optical Thickness) of the opposite coating is 0.1005, 0.3669, 0.6984, and 0.4863, respectively. In addition, the second, fourth, sixth, and eighth layers are formed of low-refractive-index materials, and their thicknesses are 69.85nm, 44.22nm, 37.34nm, and 119.44nm, respectively. The relative QWOTs are 0.7518, 0.4760, 0.4019, and 1.2856, respectively.

In addition, the refractive index of the substrate 110 is between about 1.4 and 1.6, and the refractive index of the infrared ink layer 120 is between about 1.4 and 1.6.

Refer to FIG. 3, which is a schematic diagram showing measurement data of light transmittance of a high-infrared transmittance structure disclosed in the present invention. As shown in the figure, the light transmittance curve 310 of the conventional structure is not provided with an anti-reflection layer. In actual measurement data, at a wavelength of 550 nm, it has a light transmittance of about 1%, and at 850 nm It has a light transmittance of about 89.3% at the wavelength of. Further referring to the light transmittance curve 320 of the high-infrared transmittance structure, in the actual measurement data, at a wavelength of 550 nm, it has a light transmittance of about 1.1%, and at a wavelength of 850 nm, it has about 92.4 % Light transmittance.

Therefore, the high infrared transmittance structure 100 disclosed in the present invention may In order to effectively increase the infrared transmittance, the infrared transmittance can be maintained above 90%, and preferably can be maintained above about 94%, which effectively increases the sensitivity and detection distance of electronic products for infrared detection functions. . In addition, in terms of appearance, since the visible light transmittance is still maintained below 5%, the effect of hiding the infrared detection hole can be maintained, so that the appearance of the electronic product is maintained and the privacy of the detection device is maintained.

Refer to FIG. 2, which is a schematic diagram illustrating another preferred embodiment of a high-infrared transmittance structure disclosed in the present invention. As shown, the high infrared transmittance structure 200 includes a substrate 210, an infrared ink layer 220, and an anti-reflection film 230. The infrared ink layer 220 is formed on the substrate 210, and the anti-reflection film 230 is formed on the infrared ink layer 220 to improve infrared transmittance. In this embodiment, the anti-reflection layer is formed by an anti-reflection film 230. The other side of the substrate 210 with respect to the infrared ink layer 220 is exposed to the air.

The substrate 210 has a light transmittance of more than 80% at a wavelength of 380 nm to 1000 nm. The infrared ink layer 220 is formed of a resin, a pigment, and a hardener. In an embodiment, the infrared ink layer 220 has a light transmittance of less than 15% at a wavelength of 550 nm, and has a light transmittance of greater than 75% at a wavelength of 850 nm.

As shown in FIG. 2, the anti-reflection film 230 is a thin film formed of an anti-reflection material. Preferably, the anti-reflection film 230 has a light reflectance of less than 4% at a wavelength of 380 nm to 1000 nm.

In addition, the refractive index of the substrate 210 is between about 1.4 and 1.6, and the refractive index of the infrared ink layer 220 is between about 1.4 and 1.6.

Therefore, the high-infrared transmittance structure 200 disclosed in the present invention can also effectively improve the infrared transmittance, so that the infrared transmittance is maintained above 90%, preferably more than approximately 94%, effectively. To increase the sensitivity and detection distance of electronic products to the infrared detection function. In addition, in terms of appearance, since the visible light transmittance is still maintained below 5%, the effect of hiding the infrared detection hole can be maintained, so that the appearance of the electronic product is maintained and the privacy of the detection device is maintained.

In one embodiment, the high-infrared transmittance structure 200 further includes a light shielding element 240 disposed on the substrate 210, which has an opening 242, and the infrared ink layer 220 is disposed in the opening 242. In addition, the aforementioned anti-reflection film 230 is directly attached to the infrared ink layer 220 and is exposed to the air.

In summary, the high infrared transmittance structure of the present invention can effectively increase the sensitivity and detection distance of electronic products to the infrared detection function, and provide the effect of hiding the infrared detection hole.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Therefore, the protection of the present invention The scope shall be determined by the scope of the attached patent application.

Claims (9)

A high infrared transmittance structure includes: a substrate; an infrared ink layer formed on the substrate; and an anti-reflection layer formed on the infrared ink layer to improve infrared transmittance, The anti-reflection layer has a light reflectance of less than 4% at a wavelength of 380nm to 1000nm. The high infrared transmittance structure according to claim 1, wherein the substrate has a light transmittance of greater than 80% at a wavelength of 380nm to 1000nm. The high infrared transmittance structure according to claim 2, wherein the infrared ink layer comprises a resin, a pigment, and a hardener. The high infrared transmittance structure according to claim 3, wherein the infrared ink layer has a light transmittance of less than 15% at a wavelength of 550 nm. The high infrared transmittance structure according to claim 4, wherein the infrared ink layer has a light transmittance of greater than 75% at a wavelength of 850 nm. The high infrared transmittance structure according to claim 5, wherein the anti-reflection layer is formed by an anti-reflection film. The high infrared transmittance structure according to claim 5, wherein the anti-reflection layer is formed by stacking one or more high refractive index materials and one or more low refractive index materials on each other. The high infrared transmittance structure according to claim 1, wherein the refractive indexes of the substrate and the infrared ink layer are between about 1.4 and 1.6. The high infrared transmittance structure according to claim 8, wherein the anti-reflection layer is directly exposed to the air.