TW201505854A - Method for manufacturing copper compound-containing film, method for suppressing an increasing of viscosity of composition for film formation, kit for manufacturing composition for film formation, and solid-state image sensing device - Google Patents

Method for manufacturing copper compound-containing film, method for suppressing an increasing of viscosity of composition for film formation, kit for manufacturing composition for film formation, and solid-state image sensing device Download PDF

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TW201505854A
TW201505854A TW103125703A TW103125703A TW201505854A TW 201505854 A TW201505854 A TW 201505854A TW 103125703 A TW103125703 A TW 103125703A TW 103125703 A TW103125703 A TW 103125703A TW 201505854 A TW201505854 A TW 201505854A
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group
compound
film
composition
copper
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TW103125703A
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Chinese (zh)
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Seong-Mu Bak
Yuki Nara
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Fujifilm Corp
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/20Filters
    • G02B5/22Absorbing filters
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D163/00Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • C09D7/43Thickening agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • C09D7/65Additives macromolecular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14618Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14623Optical shielding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Abstract

This invention provides a method for manufacturing a copper compound-containing film with little flaws such as cracks, a method for suppressing an increasing of viscosity of a composition for film formation, a kit for manufacturing the composition for film formation and a solid-state image sensing device. The method for manufacturing the copper compound-containing film includes: a step of mixing a composition containing a copper compound and a curable composition containing a curable compound to produce the composition for film formation, and a step of applying the composition for film formation on a substrate within three days after the production of the composition for film formation.

Description

含有銅化合物的膜的製造方法、抑制膜形成用組成物的增黏的方法、用於製造膜形成用組成物的套組及固體攝像元件 Method for producing a film containing a copper compound, a method for suppressing adhesion of a film-forming composition, a kit for producing a film-forming composition, and a solid-state image sensor

本發明是有關於一種含有銅化合物的膜的製造方法、抑制膜形成用組成物的增黏的方法、用於製造膜形成用組成物的套組及固體攝像元件。 The present invention relates to a method for producing a film containing a copper compound, a method for suppressing adhesion of a film-forming composition, a kit for producing a film-forming composition, and a solid-state image sensor.

於攝影機、數位靜態相機、帶有相機功能的行動電話等中,使用作為彩色圖像的固體攝像元件的電荷耦合元件(Charge Coupled Device,CCD)影像感測器或互補金氧半導體(Complementary Metal Oxide Semiconductor,CMOS)影像感測器。固體攝像元件因於其光接收部中使用對於近紅外線具有感度的矽光電二極體(silicon photodiode),故必須進行視感度修正, 且多使用近紅外線截止濾光片(以下,亦稱為紅外線(Infrared,IR)截止濾光片)。 In a camera, a digital still camera, a mobile phone with a camera function, etc., a charge coupled device (CCD) image sensor or a complementary metal oxide semiconductor (Complementary Metal Oxide) is used as a solid-state image sensor of a color image. Semiconductor, CMOS) image sensor. Since the solid-state imaging device uses a silicon photodiode having sensitivity to near-infrared rays in its light receiving portion, it is necessary to perform visual sensitivity correction. A near-infrared cut filter (hereinafter also referred to as an infrared (IR) cut filter) is often used.

作為近紅外線截止濾光片的材料,於專利文獻1中揭示有一種含有硬化性化合物(環氧化合物)及銅化合物(磷酸酯銅錯合物及羧酸銅錯合物的至少1種)的硬化性組成物。 As a material of the near-infrared cut filter, Patent Document 1 discloses that a curable compound (epoxy compound) and a copper compound (at least one of a copper phosphate complex and a copper carboxylate complex) are contained. A hardening composition.

[現有技術文獻] [Prior Art Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2008-303308號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-303308

此處,對所述專利文獻1中所揭示的硬化性組成物進行研究的結果,可知存在容易因時間經過而增黏的傾向。如所述般增黏的硬化性組成物難以藉由塗佈等而呈層狀地應用於基材上。另外,存在所獲得的膜中容易產生裂紋等不良的傾向。 Here, as a result of examining the curable composition disclosed in Patent Document 1, it is found that there is a tendency that it tends to increase in viscosity due to passage of time. The hardenable composition which is thickened as described above is difficult to apply to the substrate in a layer form by coating or the like. Further, there is a tendency that defects such as cracks are likely to occur in the obtained film.

本發明是解決所述課題的發明,其目的在於提供一種裂紋等不良少的含有銅化合物的膜的製造方法。 The present invention has been made to solve the above problems, and an object of the invention is to provide a method for producing a copper compound-containing film having few defects such as cracks.

本發明者等人基於所述狀況而進行努力研究的結果,發現藉由將含有銅化合物及硬化性化合物的組成物設為不同的狀態,於使用前3日以內,將含有銅化合物的組成物與含有硬化性化合物的硬化性組成物混合,而可解決所述課題。 As a result of intensive studies based on the above-mentioned conditions, the present inventors have found that a composition containing a copper compound is used within three days before use by setting a composition containing a copper compound and a curable compound in a different state. The problem can be solved by mixing with a curable composition containing a curable compound.

具體而言,藉由以下的手段<1>,較佳為藉由手段<2>~ 手段<14>來解決所述課題。 Specifically, by the following means <1>, it is preferable to use the means <2>~ Means <14> to solve the problem.

<1>一種含有銅化合物的膜的製造方法,其包括:將含有銅化合物的組成物與含有硬化性化合物的硬化性組成物混合來製備膜形成用組成物的步驟、以及於製備後3日以內將膜形成用組成物應用於基材上的步驟。 <1> A method for producing a film containing a copper compound, comprising: a step of preparing a film-forming composition by mixing a composition containing a copper compound and a curable composition containing a curable compound, and 3 days after preparation The step of applying the film-forming composition to the substrate is carried out.

<2>如<1>所述的含有銅化合物的膜的製造方法,其中於膜形成用組成物的製備後1日以內進行應用。 <2> The method for producing a film containing a copper compound according to <1>, wherein the film forming composition is used within one day after preparation.

<3>如<1>或<2>所述的含有銅化合物的膜的製造方法,其中相對於製備膜形成用組成物後10分鐘後的膜形成用組成物的初始黏度(V0),於相同溫度下應用時的膜形成用組成物的黏度(V1)的變化率為140%以下,且相對於初始黏度(V0)的黏度(V1)的變化率由下述式表示,式:((V1-V0)/V0)×100。 <3> The method for producing a film containing a copper compound according to <1> or <2>, wherein the initial viscosity (V0) of the film-forming composition after 10 minutes from the preparation of the film-forming composition is The rate of change of the viscosity (V1) of the film-forming composition when applied at the same temperature is 140% or less, and the rate of change of the viscosity (V1) with respect to the initial viscosity (V0) is represented by the following formula: (( V1-V0)/V0)×100.

<4>如<1>至<3>中任一項所述的含有銅化合物的膜的製造方法,其中硬化性化合物含有氧雜環化合物。 The method for producing a copper compound-containing film according to any one of <1> to <3> wherein the curable compound contains an oxygen heterocyclic compound.

<5>如<1>至<3>中任一項所述的含有銅化合物的膜的製造方法,其中硬化性化合物含有環氧化合物。 The method for producing a copper compound-containing film according to any one of <1> to <3> wherein the curable compound contains an epoxy compound.

<6>如<1>至<5>中任一項所述的含有銅化合物的膜的製造方法,其中相對於膜形成用組成物中的總固體成分的銅化合物的含量為10質量%以上。 The method for producing a copper compound-containing film according to any one of the above aspects, wherein the content of the copper compound relative to the total solid content in the film-forming composition is 10% by mass or more .

<7>如<1>至<6>中任一項所述的含有銅化合物的膜的製造方法,其中銅化合物含有藉由包含配位部位的聚合體與銅成分的反應所獲得的銅化合物。 The method for producing a copper compound-containing film according to any one of the above aspects, wherein the copper compound contains a copper compound obtained by a reaction of a polymer containing a coordination site and a copper component. .

<8>如<1>至<6>中任一項所述的含有銅化合物的膜的製造方法,其中銅化合物包括:藉由主鏈上具有芳香族烴基及/或芳香族雜環基、且包含配位部位的聚合體(A1)與銅成分的反應所獲得的銅化合物;以及藉由包含配位部位的分子量為1000以下的化合物與銅成分的反應所獲得的銅化合物。 The method for producing a copper compound-containing film according to any one of the above aspects, wherein the copper compound comprises an aromatic hydrocarbon group and/or an aromatic heterocyclic group in the main chain. Further, a copper compound obtained by a reaction of a polymer (A1) having a coordination site with a copper component; and a copper compound obtained by a reaction of a compound containing a molecular weight of 1,000 or less of a coordination site with a copper component.

<9>如<1>至<6>中任一項所述的含有銅化合物的膜的製造方法,其藉由將膜形成用組成物在製備後3日以內應用於基材上,而抑制膜形成用組成物的增黏。 The method for producing a film containing a copper compound according to any one of the above aspects, wherein the film forming composition is applied to a substrate within 3 days after preparation, thereby suppressing The composition for film formation is thickened.

<10>如<1>至<9>中任一項所述的含有銅化合物的膜的製造方法,其藉由將膜形成用組成物在製備後3日以內應用於基材上,而抑制膜形成用組成物的增黏。 The method for producing a film containing a copper compound according to any one of the above aspects, wherein the film-forming composition is applied to a substrate within 3 days after preparation, thereby suppressing The composition for film formation is thickened.

<11>如<1>至<10>中任一項所述的含有銅化合物的膜的製造方法,其中含有銅化合物的膜為近紅外線截止濾光片。 The method for producing a copper compound-containing film according to any one of <1> to <10> wherein the film containing the copper compound is a near-infrared cut filter.

<12>一種固體攝像元件,其包括藉由如<1>至<11>中任一項所述的含有銅化合物的膜的製造方法所獲得的含有銅化合物的膜。 <12> A solid-state image sensor comprising a copper compound-containing film obtained by the method for producing a copper compound-containing film according to any one of <1> to <11>.

<13>一種抑制膜形成用組成物的增黏的方法,其是抑制包 含含有銅化合物的組成物及含有硬化性化合物的硬化性組成物的膜形成用組成物的增黏的方法,其包括:於使用膜形成用組成物前3日以內,將含有銅化合物的組成物與硬化性組成物混合。 <13> A method for inhibiting adhesion of a film-forming composition, which is a suppression package A method for thickening a film-forming composition comprising a composition containing a copper compound and a curable composition containing a curable compound, comprising: a composition containing a copper compound within 3 days before the film forming composition is used The substance is mixed with the curable composition.

<14>一種套組,其是用於製造包含含有銅化合物的組成物及含有硬化性化合物的硬化性組成物的膜形成用組成物的套組,其包括:含有銅化合物的組成物與硬化性組成物。 <14> A kit for producing a film-forming composition comprising a composition containing a copper compound and a curable composition containing a curable compound, comprising: a composition containing a copper compound and hardening Sexual composition.

根據本發明,可使用硬化性組成物而適當地製造膜。進而,可進一步抑制所獲得的含有銅化合物的膜的裂紋等不良。 According to the invention, a film can be suitably produced using a curable composition. Further, it is possible to further suppress defects such as cracks in the obtained copper compound-containing film.

1‧‧‧含有包含酸基離子的聚合體(A2)及銅離子的銅化合物 1‧‧‧ Copper compound containing polymer (A2) containing acid-based ions and copper ions

2‧‧‧銅 2‧‧‧ copper

3‧‧‧主鏈 3‧‧‧Main chain

4‧‧‧側鏈 4‧‧‧ side chain

5‧‧‧酸基離子部位 5‧‧‧ Acid-based ion sites

10‧‧‧矽基板 10‧‧‧矽 substrate

12‧‧‧攝像元件部 12‧‧‧ Camera Components Division

13‧‧‧層間絕緣膜 13‧‧‧Interlayer insulating film

14‧‧‧基底層 14‧‧‧ basal layer

15‧‧‧彩色濾光片 15‧‧‧Color filters

15B‧‧‧藍色的彩色濾光片 15B‧‧‧Blue color filter

15G‧‧‧綠色的彩色濾光片 15G‧‧‧Green color filter

15R‧‧‧紅色的彩色濾光片 15R‧‧‧Red color filter

16‧‧‧保護層 16‧‧‧Protective layer

17‧‧‧微透鏡 17‧‧‧Microlens

18‧‧‧遮光膜 18‧‧‧Shade film

20‧‧‧黏著劑 20‧‧‧Adhesive

22‧‧‧絕緣膜 22‧‧‧Insulation film

23‧‧‧金屬電極 23‧‧‧Metal electrodes

24‧‧‧阻焊劑層 24‧‧‧ solder resist layer

26‧‧‧內部電極 26‧‧‧Internal electrodes

27‧‧‧元件表面電極 27‧‧‧ Component surface electrode

30‧‧‧玻璃基板 30‧‧‧ glass substrate

40‧‧‧攝像鏡頭 40‧‧‧ camera lens

42‧‧‧近紅外線截止濾光片 42‧‧‧Near-infrared cut-off filter

44‧‧‧遮光兼電磁罩 44‧‧‧Shading and electromagnetic cover

45‧‧‧黏著劑 45‧‧‧Adhesive

46‧‧‧平坦化層 46‧‧‧Destivation layer

50‧‧‧鏡頭架 50‧‧‧Lens frame

60‧‧‧焊球 60‧‧‧ solder balls

70‧‧‧電路基板 70‧‧‧ circuit board

80‧‧‧紫外.紅外光反射膜 80‧‧‧UV. Infrared light reflecting film

81‧‧‧透明基材 81‧‧‧Transparent substrate

82‧‧‧近紅外線吸收層 82‧‧‧Near infrared absorption layer

83‧‧‧抗反射層 83‧‧‧Anti-reflective layer

100‧‧‧固體攝像元件 100‧‧‧Solid camera components

200‧‧‧相機模組 200‧‧‧ camera module

hν‧‧‧入射光 Hν‧‧‧ incident light

圖1是表示本發明中所使用的銅化合物的一例的影像圖。 Fig. 1 is a view showing an example of a copper compound used in the present invention.

圖2是表示具備本發明的實施形態的固體攝像元件的相機模組的構成的概略剖面圖。 FIG. 2 is a schematic cross-sectional view showing a configuration of a camera module including a solid-state image sensor according to an embodiment of the present invention.

圖3是本發明的實施形態的固體攝像元件的概略剖面圖。 Fig. 3 is a schematic cross-sectional view showing a solid-state image sensor according to an embodiment of the present invention.

圖4是表示相機模組中的近紅外線截止濾光片周邊部分的一例的概略剖面圖。 4 is a schematic cross-sectional view showing an example of a peripheral portion of a near-infrared cut filter in a camera module.

圖5是表示相機模組中的近紅外線截止濾光片周邊部分的一例的概略剖面圖。 5 is a schematic cross-sectional view showing an example of a peripheral portion of a near-infrared cut filter in a camera module.

圖6是表示相機模組中的近紅外線截止濾光片周邊部分的一 例的概略剖面圖。 6 is a view showing a peripheral portion of a near-infrared cut filter in a camera module. A schematic cross-sectional view of an example.

以下,對本發明的內容進行詳細說明。 Hereinafter, the contents of the present invention will be described in detail.

於本說明書中,「~」是以包含其前後所記載的數值作為下限值及上限值的含義來使用。 In the present specification, "~" is used in the sense that the numerical values described before and after are included as the lower limit and the upper limit.

於本說明書中,「(甲基)丙烯酸酯」表示丙烯酸酯及甲基丙烯酸酯,「(甲基)丙烯酸」表示丙烯酸及甲基丙烯酸,「(甲基)丙烯醯基」表示丙烯醯基及甲基丙烯醯基。 In the present specification, "(meth)acrylate" means acrylate and methacrylate, "(meth)acrylic" means acrylic acid and methacrylic acid, and "(meth)acryloyl group" means acrylonitrile group and Methyl methacrylate.

於本說明書中,「單量體」與「單體」的含義相同,另外,「聚合體」與「聚合物」的含義相同。 In the present specification, "single body" has the same meaning as "monomer", and "polymer" has the same meaning as "polymer".

於本說明書中的基(原子團)的表述中,未記載經取代及未經取代的表述包含不具有取代基的基(原子團),並且亦包含具有取代基的基(原子團)。 In the expression of the group (atomic group) in the present specification, the substituted and unsubstituted expressions are not described as including a group having no substituent (atomic group), and also a group having a substituent (atomic group).

本發明中的近紅外線是指最大吸收波長區域為700nm~2500nm,尤其為700nm~1000nm。 The near-infrared ray in the present invention means that the maximum absorption wavelength region is from 700 nm to 2500 nm, particularly from 700 nm to 1000 nm.

本發明中的近紅外線吸收性是指於近紅外線區域中具有最大吸收波長。 The near-infrared absorbing property in the present invention means having a maximum absorption wavelength in the near-infrared region.

本發明中的聚合體的主鏈是指形成聚合體的骨架(長鏈)所需的原子或原子團,當所述骨架的一部分或全部為環狀的基(例如芳基)時,亦將環狀的基作為主鏈的一部分。另外,亦將直接鍵結於該主鏈上的原子作為主鏈的一部分。本發明中的聚合體的側鏈是指主鏈以外的部分。但是,亦將直接鍵結於主鏈上的官能 基(例如,後述的酸基或其鹽)作為側鏈。 The main chain of the polymer in the present invention means an atom or an atom group required to form a skeleton (long chain) of the polymer, and when a part or all of the skeleton is a cyclic group (for example, an aryl group), the ring is also The base is part of the main chain. In addition, atoms directly bonded to the main chain are also included as part of the main chain. The side chain of the polymer in the present invention means a portion other than the main chain. However, the function that is directly bonded to the main chain A group (for example, an acid group or a salt thereof described later) is used as a side chain.

<含有銅化合物的膜的製造方法> <Method for Producing Film Containing Copper Compound>

本發明的含有銅化合物的膜的製造方法的特徵在於包括:將含有銅化合物的組成物(以下,稱為含有銅化合物的組成物)與含有硬化性化合物的硬化性組成物混合來製備膜形成用組成物的步驟、以及於製備後3日以內將膜形成用組成物應用於基材上的步驟。 The method for producing a copper compound-containing film of the present invention is characterized in that a composition containing a copper compound (hereinafter referred to as a composition containing a copper compound) and a curable composition containing a curable compound are mixed to prepare a film formation. The step of using the composition and the step of applying the film-forming composition to the substrate within 3 days after preparation.

根據本發明,可提供一種裂紋等不良少的含有銅化合物的膜。雖然其理由為推斷,但可認為基於如下的原因:將含有銅化合物的組成物與含有硬化性化合物的硬化性組成物混合而獲得的膜形成用組成物雖然容易因時間經過而增黏,但於本發明中,可消除這一點。即,於先前的方法中,膜形成用組成物中所含有的銅作為觸媒發揮作用,而促進硬化性化合物的硬化。因此,可認為膜形成用組成物因時間經過而導致黏度過度增加,難以呈層狀地應用於基材上,且所獲得的含有銅化合物的膜產生裂紋。 According to the present invention, it is possible to provide a film containing a copper compound having few defects such as cracks. Though the reason for this is estimated, it is considered that the film-forming composition obtained by mixing the composition containing a copper compound and the curable composition containing a curable compound is likely to be sticky due to passage of time. In the present invention, this can be eliminated. In other words, in the prior art, copper contained in the film-forming composition acts as a catalyst to promote hardening of the curable compound. Therefore, it is considered that the composition for forming a film excessively increases in viscosity due to passage of time, and it is difficult to apply it to the substrate in a layered manner, and the obtained film containing the copper compound is cracked.

於本發明中,分開來製備含有銅化合物的組成物與硬化性組成物,且在應用於基材上之前3日以內,將該些組成物混合來製備膜形成用組成物,藉此成功地抑制膜形成用組成物的增黏。作為結果,可於黏度不過高的狀態下將膜形成用組成物應用於基材上,從而可提供一種裂紋等不良更少的含有銅化合物的膜。 In the present invention, a composition containing a copper compound and a curable composition are separately prepared, and these compositions are mixed within 3 days before being applied to a substrate to prepare a film-forming composition, thereby successfully succeeding The adhesion of the film forming composition is suppressed. As a result, the film-forming composition can be applied to the substrate in a state where the viscosity is not excessively high, and a film containing a copper compound having less defects such as cracks can be provided.

<<將含有銅化合物的組成物與硬化性組成物混合來製備膜形成用組成物的步驟>> <<Step of preparing a film-forming composition by mixing a composition containing a copper compound and a curable composition>>

本發明的含有銅化合物的膜的製造方法包括將含有銅化合物的組成物與硬化性組成物混合來製備膜形成用組成物的步驟。 The method for producing a copper compound-containing film of the present invention includes a step of preparing a film-forming composition by mixing a composition containing a copper compound and a curable composition.

含有銅化合物的組成物及硬化性組成物較佳為於至進行混合為止的期間內,分別在40℃以下進行保管。藉由在40℃以下進行保管,而可進一步抑制含有銅化合物的組成物及硬化性組成物的增黏,作為結果,可進一步抑制膜形成用組成物的增黏。含有銅化合物的組成物及硬化性組成物的保管溫度分別較佳為30℃以下,更佳為25℃以下,進而更佳為15℃以下,特佳為10℃以下。藉由設為此種保管溫度,而可更有效地抑制含有銅化合物的組成物及硬化性組成物的增黏。 The composition containing the copper compound and the curable composition are preferably stored at 40 ° C or lower during the period until the mixing. By storing at 40 ° C or lower, the composition of the copper compound and the curable composition can be further suppressed from increasing, and as a result, the thickening of the film forming composition can be further suppressed. The storage temperature of the composition containing the copper compound and the curable composition is preferably 30° C. or lower, more preferably 25° C. or lower, still more preferably 15° C. or lower, and particularly preferably 10° C. or lower. By setting such a storage temperature, it is possible to more effectively suppress the adhesion of the composition containing the copper compound and the curable composition.

含有銅化合物的組成物及硬化性組成物的保管溫度的差較佳為小,例如較佳為20℃以下,更佳為10℃以下,進而更佳為5℃以下。 The difference in storage temperature between the composition containing the copper compound and the curable composition is preferably small, and is, for example, preferably 20 ° C or lower, more preferably 10 ° C or lower, and still more preferably 5 ° C or lower.

含有銅化合物的組成物及硬化性組成物的詳細情況將後述。 The details of the composition containing the copper compound and the curable composition will be described later.

<<將膜形成用組成物在製備後3日以內應用於基材上的步驟>> <<Step of applying the film-forming composition to the substrate within 3 days after preparation>>

本發明的製造方法包括將膜形成用組成物在製備後3日以內應用於基材上的步驟。如此,藉由在製備後短時間內將膜形成用組成物應用於基材上,而可抑制膜形成用組成物的增黏。 The production method of the present invention includes the step of applying the film-forming composition to the substrate within 3 days after preparation. By applying the film-forming composition to the substrate in a short time after preparation, the film-forming composition can be suppressed from being thickened.

朝基材上的應用為製備膜形成用組成物後3日以內,較佳為1日以內,更佳為12小時以內,進而佳為6小時以內,進而更佳為3小時以內。 The application to the substrate is within 3 days after the preparation of the film-forming composition, preferably within 1 day, more preferably within 12 hours, further preferably within 6 hours, and even more preferably within 3 hours.

相對於製備膜形成用組成物後10分鐘後的膜形成用組成物的初始黏度(V0),於相同溫度下應用時的膜形成用組成物的黏度(V1)的變化率[((V1-V0)/V0)×100]較佳為140%以下,更佳為120%以下,進而更佳為90%以下,特佳為50%以下。藉由使黏度的變化率滿足此種範圍,而可提供裂紋等不良更少的含有銅化合物的膜。 The change rate of the viscosity (V1) of the film-forming composition when applied at the same temperature with respect to the initial viscosity (V0) of the film-forming composition 10 minutes after the preparation of the film-forming composition [((V1-) V0)/V0)×100] is preferably 140% or less, more preferably 120% or less, still more preferably 90% or less, and particularly preferably 50% or less. By satisfying the range of the change rate of the viscosity, it is possible to provide a film containing a copper compound having less defects such as cracks.

膜形成用組成物較佳為於至應用於基材上為止的期間內,在40℃以下進行保管。藉由在40℃以下進行保管,而可進一步抑制膜形成用組成物的增黏。膜形成用組成物的保管溫度更佳為25℃以下,進而更佳為15℃以下,特佳為10℃以下。藉由設為此種保管溫度,而可更有效地抑制膜形成用組成物的增黏。 The film-forming composition is preferably stored at 40 ° C or lower during the period until it is applied to the substrate. By storing at 40 ° C or lower, the thickening of the film-forming composition can be further suppressed. The storage temperature of the film-forming composition is more preferably 25° C. or lower, more preferably 15° C. or lower, and particularly preferably 10° C. or lower. By setting such a storage temperature, the thickening of the film formation composition can be more effectively suppressed.

將膜形成用組成物應用於基材上的方法較佳為塗佈或印刷,具體而言,較佳為選自滴落澆鑄(drop casting)、敷料器塗佈、浸塗、狹縫塗佈、網版印刷、噴塗及旋塗中的至少1種。 The method of applying the film-forming composition to a substrate is preferably coating or printing. Specifically, it is preferably selected from the group consisting of drop casting, applicator coating, dip coating, and slit coating. At least one of screen printing, spray coating and spin coating.

於滴加法(滴落澆鑄)的情況下,為了以規定的膜厚獲得均勻的膜,較佳為於支撐體上形成將光阻劑作為隔離壁的膜形成用組成物的滴加區域。藉由調整膜形成用組成物的滴加量及固體成分濃度、滴加區域的面積,而可獲得所期望的膜厚。 In the case of the dropping method (drop casting), in order to obtain a uniform film with a predetermined film thickness, it is preferable to form a dropping region of a film forming composition using a photoresist as a partition wall on the support. The desired film thickness can be obtained by adjusting the amount of the film forming composition, the solid content concentration, and the area of the dropping region.

基材並無特別限定,例如可列舉包含玻璃等的透明基板(玻璃基板或塑膠基板)。另外,當用於固體攝像元件用途時,基材亦可為固體攝像元件、設置於固體攝像元件的光接收側的其他基板或平坦化層等層。 The substrate is not particularly limited, and examples thereof include a transparent substrate (glass substrate or plastic substrate) containing glass or the like. Further, when used for a solid-state imaging device, the substrate may be a solid-state imaging device, another substrate provided on the light-receiving side of the solid-state imaging device, or a layer such as a planarization layer.

應用於基材上的膜形成用組成物的量並無特別限定,但較佳為對膜形成用組成物進行乾燥後的膜厚變成50μm~300μm的量。 The amount of the film-forming composition to be applied to the substrate is not particularly limited. However, the film thickness after drying the film-forming composition is preferably 50 μm to 300 μm.

另外,作為塗膜的乾燥條件,亦根據各成分、溶劑的種類、使用比例等而不同,但通常為60℃~200℃的溫度、30秒~15分鐘左右。 In addition, the drying conditions of the coating film differ depending on the type of each component, the type of the solvent, the ratio of use, and the like, but are usually from 60 ° C to 200 ° C for about 30 seconds to 15 minutes.

使用膜形成用組成物形成含有銅化合物的膜(近紅外線截止濾光片)的方法亦可包含其他步驟。作為其他步驟,可根據目的而適宜選擇,例如可列舉對應用於基材上的膜形成用組成物進行乾燥的步驟等。 The method of forming a film containing a copper compound (near-infrared cut filter) using the film forming composition may also include other steps. Other steps can be appropriately selected depending on the purpose, and examples thereof include a step of drying the composition for forming a film on a substrate, and the like.

作為乾燥條件,亦根據各成分、溶劑的種類、使用比例等而不同,但通常為60℃~200℃的溫度、30秒~15分鐘左右。 The drying conditions vary depending on the components, the type of the solvent, the ratio of use, and the like, but are usually from 60 ° C to 200 ° C for about 30 seconds to 15 minutes.

作為加熱裝置,並無特別限制,可根據目的而自公知的裝置中適宜選擇,例如可列舉:乾燥烘箱、加熱板、IR加熱器等。 The heating device is not particularly limited, and may be appropriately selected from known devices depending on the purpose, and examples thereof include a drying oven, a hot plate, and an IR heater.

以下,對本發明中所使用的膜形成用組成物、含有銅化合物的組成物及硬化性組成物進行詳細說明。 Hereinafter, the composition for forming a film, the composition containing a copper compound, and the curable composition used in the present invention will be described in detail.

<<膜形成用組成物>> <<Composition for film formation>>

膜形成用組成物可藉由將含有銅化合物的組成物及硬化性組成物混合而獲得,且至少含有銅化合物及硬化性化合物。 The film-forming composition can be obtained by mixing a composition containing a copper compound and a curable composition, and contains at least a copper compound and a curable compound.

相對於膜形成用組成物中的總固體成分,膜形成用組成物中的銅化合物及硬化性化合物的含量的合計較佳為70質量%以上,更佳為80質量%以上,進而更佳為85質量%以上。 The total content of the copper compound and the curable compound in the film-forming composition is preferably 70% by mass or more, more preferably 80% by mass or more, and even more preferably more, based on the total solid content in the film-forming composition. 85 mass% or more.

相對於膜形成用組成物中的總固體成分,膜形成用組成物中 的銅化合物的含量較佳為10質量%以上,更佳為15質量%以上。另外,上限較佳為70質量%以下。尤其,相對於膜形成用組成物中的總固體成分,銅化合物的含量較佳為10質量%以上,更佳為15質量%~70質量%。 The film forming composition is relative to the total solid content in the film forming composition The content of the copper compound is preferably 10% by mass or more, and more preferably 15% by mass or more. Further, the upper limit is preferably 70% by mass or less. In particular, the content of the copper compound is preferably 10% by mass or more, and more preferably 15% by mass to 70% by mass based on the total solid content in the film-forming composition.

膜形成用組成物可進而含有銅化合物及硬化性化合物以外的其他成分。作為其他成分,可列舉溶劑(較佳為水)、界面活性劑等。 The film-forming composition may further contain a copper compound and other components other than the curable compound. As another component, a solvent (preferably water), a surfactant, etc. are mentioned.

為了去除異物或減少缺陷等,較佳為利用過濾器對膜形成用組成物進行過濾。過濾器只要是自先前以來用於過濾用途等的過濾器,則可無特別限定地使用。例如可列舉利用聚四氟乙烯(Polytetrafluoroethylene,PTFE)等氟樹脂,尼龍等聚醯胺系樹脂,聚乙烯、聚丙烯(Polypropylene,PP)等聚烯烴樹脂(包含高密度、超高分子量)等的過濾器。該些原材料之中,較佳為聚丙烯(包含高密度聚丙烯)及尼龍。 In order to remove foreign matter, reduce defects, and the like, it is preferred to filter the film formation composition by a filter. The filter is not particularly limited as long as it is a filter used for filtration purposes or the like from the past. For example, a fluororesin such as polytetrafluoroethylene (PTFE), a polyamide resin such as nylon, or a polyolefin resin (including high density, ultrahigh molecular weight) such as polyethylene or polypropylene (polypropylene) may be used. filter. Among these raw materials, polypropylene (including high density polypropylene) and nylon are preferred.

過濾器的孔徑較佳為0.1μm~7.0μm左右,更佳為0.2μm~2.5μm左右,進而更佳為0.2μm~1.5μm左右,特佳為0.3μm~0.7μm。藉由設為該範圍,可抑制過濾堵塞,並可確實地去除膜形成用組成物中所含有的雜質或凝聚物等微細的異物。 The pore diameter of the filter is preferably from about 0.1 μm to about 7.0 μm, more preferably from about 0.2 μm to about 2.5 μm, still more preferably from about 0.2 μm to about 1.5 μm, and particularly preferably from 0.3 μm to 0.7 μm. By setting it as this range, it is possible to suppress clogging of the filter, and it is possible to surely remove fine foreign matter such as impurities or aggregates contained in the film-forming composition.

當使用過濾器時,亦可將不同的過濾器加以組合。此時,利用第1種過濾器的過濾可僅進行1次,亦可進行2次以上。當將不同的過濾器加以組合來進行2次以上的過濾時,較佳為第2次以後的孔徑等同於或大於第1次的過濾的孔徑。另外,亦可於所 述範圍內將孔徑不同的第1種過濾器加以組合。孔徑可參照過濾器生產商的標稱值。作為市售的過濾器,例如可自日本頗爾(Pall)股份有限公司、愛多邦得科東洋(Advantec Toyo)股份有限公司、日本英特格(Nihon Entegris)股份有限公司(原日本密科理(Mykrolis)股份有限公司)或北澤微濾器(Kitz Microfilter)股份有限公司等所提供的各種過濾器中進行選擇。 Different filters can also be combined when using filters. At this time, the filtration by the first type of filter may be performed only once or twice or more. When two or more filters are combined by using different filters, it is preferable that the pore diameter after the second time is equal to or larger than the pore diameter of the first filtration. In addition, it can also be used in In the above range, the first type of filters having different pore diameters are combined. The aperture can be referred to the nominal value of the filter manufacturer. As a commercially available filter, for example, from Japan Pall Co., Ltd., Advantec Toyo Co., Ltd., Japan Nihon Entegris Co., Ltd. (formerly Japan Mico) Choose from various filters provided by Mykrolis Co., Ltd. or Kitz Microfilter Co., Ltd.

第2種過濾器可使用以與所述第1種過濾器相同的材料等所形成的過濾器。第2過濾器的孔徑較佳為0.2μm~10.0μm左右,更佳為0.2μm~7.0μm左右,進而更佳為0.3μm~6.0μm左右。藉由設為該範圍,可更確實地去除混入至膜形成用組成物中的異物。 As the second filter, a filter formed of the same material as the first filter or the like can be used. The pore diameter of the second filter is preferably from about 0.2 μm to about 10.0 μm, more preferably from about 0.2 μm to about 7.0 μm, still more preferably from about 0.3 μm to about 6.0 μm. By setting it as this range, the foreign material mixed in the film formation composition can be removed more reliably.

本發明中所使用的膜形成用組成物的用途並無特別限定,可列舉固體攝像元件的光接收側的近紅外線截止濾光片用途(例如,針對晶圓級透鏡的近紅外線截止濾光片用途等)、固體攝像元件的背面側(與光接收側為相反側)的近紅外線截止濾光片用途等,較佳為固體攝像元件的光接收側的遮光膜用途。 The use of the film-forming composition used in the present invention is not particularly limited, and examples thereof include a near-infrared cut filter for light-receiving side of a solid-state image sensor (for example, a near-infrared cut filter for a wafer-level lens) The use of the near-infrared cut filter or the like on the back side of the solid-state image sensor (opposite to the light-receiving side) is preferably used for the light-shielding film on the light-receiving side of the solid-state image sensor.

尤其,較佳為將膜形成用組成物直接塗佈於固體攝像元件用影像感測器上來形成塗膜。 In particular, it is preferable to form a coating film by directly applying a film forming composition to an image sensor for a solid-state imaging device.

另外,當藉由塗佈來形成紅外線截止層時,膜形成用組成物的黏度較佳為1mPa.s以上、3000mPa.s以下,更佳為1mPa.s以上、2000mPa.s以下,進而佳為1mPa.s~20mPa.s,進而更佳為1mPa.s~16mPa.s。 In addition, when the infrared cut-off layer is formed by coating, the viscosity of the film-forming composition is preferably 1 mPa. Above s, 3000mPa. Below s, more preferably 1mPa. Above s, 2000mPa. s below, and then preferably 1mPa. s~20mPa. s, and more preferably 1 mPa. s~16mPa. s.

膜形成用組成物的總固體成分根據塗佈方法而變更,但相對於組成物,較佳為1質量%~50質量%,更佳為1質量%~30質量%,進而更佳為10質量%~30質量%。 The total solid content of the film-forming composition is changed according to the coating method, but is preferably 1% by mass to 50% by mass, more preferably 1% by mass to 30% by mass, and still more preferably 10% by mass based on the composition. %~30% by mass.

<<含有銅化合物的組成物>> <<Composition containing copper compound>>

含有銅化合物的組成物中所含有的銅化合物只要是含有銅的化合物即可,較佳為銅錯合物。銅化合物較佳為含有藉由後述的包含配位部位的聚合體(A1)及銅成分的反應所獲得的銅化合物、及藉由包含配位部位的分子量為1000以下的化合物及銅成分的反應所獲得的銅化合物的至少一者,亦可含有所述兩者。 The copper compound contained in the composition containing a copper compound may be a copper-containing compound, and is preferably a copper complex. The copper compound preferably contains a copper compound obtained by a reaction of a polymer (A1) containing a coordination site and a copper component described later, and a compound having a molecular weight of 1000 or less and a copper component containing a coordination site. At least one of the obtained copper compounds may also contain both of them.

當含有銅化合物的組成物含有藉由聚合體(A1)及銅成分的反應所獲得的銅化合物、與藉由包含配位部位的分子量為1000以下的化合物及銅成分的反應所獲得的銅化合物時,相對於含有銅化合物的組成物中的總固體成分,藉由聚合體(A1)與銅成分的反應所獲得的銅化合物的含量較佳為10質量%以上,更佳為15質量%以上,進而更佳為20質量%以上。尤其,較佳為10質量%~90質量%,更佳為15質量%~80質量%,進而佳為15質量%~70質量%,進而更佳為20質量%~70質量%。 The composition containing a copper compound contains a copper compound obtained by a reaction of the polymer (A1) and a copper component, and a copper compound obtained by a reaction of a compound having a molecular weight of 1000 or less and a copper component containing a coordination site. In the case of the total solid content in the composition containing the copper compound, the content of the copper compound obtained by the reaction of the polymer (A1) and the copper component is preferably 10% by mass or more, and more preferably 15% by mass or more. More preferably, it is 20 mass% or more. In particular, it is preferably 10% by mass to 90% by mass, more preferably 15% by mass to 80% by mass, still more preferably 15% by mass to 70% by mass, still more preferably 20% by mass to 70% by mass.

當銅化合物為銅錯合物時,作為配位於銅上的配位體L,只要可與銅離子進行配位鍵結,則並無特別限定,例如可列舉:磺酸,羧酸,含有羰基(酯、酮)、胺、醯胺、磺醯胺、胺基甲酸酯、脲、醇、硫醇等的化合物。該些之中,較佳為羧酸及磺酸,更佳為磺酸。 When the copper compound is a copper complex, the ligand L to be placed on the copper is not particularly limited as long as it can be coordinately bonded to the copper ion, and examples thereof include a sulfonic acid, a carboxylic acid, and a carbonyl group. (Ester, ketone), amine, decylamine, sulfonamide, urethane, urea, alcohol, thiol, and the like. Among these, a carboxylic acid and a sulfonic acid are preferable, and a sulfonic acid is more preferable.

<<<低分子銅化合物>>> <<<Low Molecular Copper Compound>>>

作為銅錯合物,例如可列舉由式(A)所表示的銅錯合物。 The copper complex compound is, for example, a copper complex represented by the formula (A).

作為所述銅錯合物,例如可列舉由下述式(A)所表示的銅錯合物。 The copper complex compound represented by the following formula (A) is exemplified as the copper complex.

Cu(X)n1 式(A) Cu(X) n1 formula (A)

所述式(A)中,X表示配位於銅上的配位體,n1分別獨立地表示1~6的整數。 In the formula (A), X represents a ligand disposed on copper, and n1 independently represents an integer of 1 to 6.

配位體X為針對銅進行配位的配位部位,例如為含有包含C、N、O、S作為可配位於銅上的原子的取代基者,更佳為含有具有N或O、S等的孤電子對的基者。於分子內,配位部位並不限定於1種,可含有2種以上,可進行解離,亦可為非解離。 The ligand X is a coordination site for coordinating to copper, and is, for example, a substituent containing C, N, O, and S as an atom which can be coordinated to copper, and more preferably contains N or O, S, or the like. The base of the lone pair of electrons. In the molecule, the coordination site is not limited to one type, and may be contained in two or more types, and may be dissociated or non-dissociated.

銅錯合物為配位體配位於中心金屬的銅上而成的銅化合物,銅通常為二價的銅。例如可相對於銅成分,使成為配位體的化合物或其鹽進行混合.反應等來獲得。 The copper complex is a copper compound in which the ligand is coordinated to the copper of the central metal, and the copper is usually divalent copper. For example, the compound to be a ligand or a salt thereof can be mixed with respect to the copper component. The reaction is obtained.

所述成為配位體的化合物或其鹽較佳為含有配位部位(例如,利用陰離子進行配位的配位部位(具體為酸基或其鹽)、利用非共用電子對進行配位的配位部位)的化合物,且較佳為由下述通式(i)表示。 The compound to be a ligand or a salt thereof preferably contains a coordination site (for example, a coordination site (specifically, an acid group or a salt thereof) coordinated by an anion, and a coordination using an unshared electron pair The compound of the site is preferably represented by the following formula (i).

通式(i) General formula (i)

[化1] [Chemical 1]

通式(i)中,X1表示配位部位,n表示1~6的整數,R1表示單鍵或n價的基。 In the formula (i), X 1 represents a coordination site, n represents an integer of 1 to 6, and R 1 represents a single bond or an n-valent group.

通式(i)中,X1較佳為包含選自利用陰離子進行配位的配位部位及利用非共用電子對進行配位的配位部位中的1種以上,更佳為包含1種以上的利用陰離子進行配位的配位部位。X1可為單獨1種,亦可為2種以上,較佳為2種以上。 In the general formula (i), X 1 preferably contains one or more kinds of coordination sites selected from the group consisting of a coordination site coordinated by an anion and a group of non-shared electrons, and more preferably one or more. A coordination site that coordinates with an anion. X 1 may be one type alone or two or more types, and preferably two or more types.

所述陰離子只要是包含可配位於銅成分中的銅原子上的陰離子者即可,例如較佳為包含氧陰離子、氮陰離子或硫陰離子。 The anion may be an anion containing a copper atom which may be coordinated to the copper component, and for example, preferably contains an oxyanion, a nitrogen anion or a sulfur anion.

利用陰離子進行配位的配位部位例如較佳為選自下述群組(AN)中的至少1種。 The coordination site to be coordinated by an anion is, for example, preferably at least one selected from the group (AN) below.

群組(AN) Group (AN)

群組(AN)中,X表示N或CR,R分別獨立地表示氫原子、烷基、烯基、炔基、芳基或雜芳基。 In the group (AN), X represents N or CR, and R independently represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group or a heteroaryl group.

R所表示的烷基可為直鏈狀、分支狀或環狀,但較佳為直鏈狀。烷基的碳數較佳為1~10,更佳為1~6,進而更佳為1~4。作為烷基的例子,可列舉甲基。烷基可具有取代基,作為取代基,可列舉鹵素原子、羧酸基、雜環基。作為取代基的雜環基可為單環,亦可為多環,另外,可為芳香族,亦可為非芳香族。構成雜環的雜原子的數量較佳為1~3,更佳為1或2。構成雜環的雜原子較佳為氮原子。當烷基具有取代基時,可進而具有取代基。 The alkyl group represented by R may be linear, branched or cyclic, but is preferably linear. The carbon number of the alkyl group is preferably from 1 to 10, more preferably from 1 to 6, more preferably from 1 to 4. As an example of an alkyl group, a methyl group is mentioned. The alkyl group may have a substituent, and examples of the substituent include a halogen atom, a carboxylic acid group, and a heterocyclic group. The heterocyclic group as a substituent may be a single ring or a polycyclic ring, and may be aromatic or non-aromatic. The number of the hetero atoms constituting the hetero ring is preferably from 1 to 3, more preferably 1 or 2. The hetero atom constituting the hetero ring is preferably a nitrogen atom. When the alkyl group has a substituent, it may further have a substituent.

R所表示的炔基的碳數較佳為1~10,更佳為1~6。 The alkynyl group represented by R preferably has a carbon number of from 1 to 10, more preferably from 1 to 6.

R所表示的芳基可為單環,亦可為多環,但較佳為單環。芳基的碳數較佳為6~18,更佳為6~12,進而更佳為6。 The aryl group represented by R may be a single ring or a polycyclic ring, but is preferably a single ring. The carbon number of the aryl group is preferably from 6 to 18, more preferably from 6 to 12, and still more preferably 6.

R所表示的雜芳基可為單環,亦可為多環。構成雜芳基的雜原子的數量較佳為1~3。構成雜芳基的雜原子較佳為氮原子、氧原子或硫原子。雜芳基的碳數較佳為6~18,更佳為6~12。 The heteroaryl group represented by R may be a single ring or a polycyclic ring. The number of hetero atoms constituting the heteroaryl group is preferably from 1 to 3. The hetero atom constituting the heteroaryl group is preferably a nitrogen atom, an oxygen atom or a sulfur atom. The carbon number of the heteroaryl group is preferably from 6 to 18, more preferably from 6 to 12.

作為利用陰離子進行配位的配位部位的例子,亦可列舉單陰離子性配位部位。單陰離子性配位部位表示經由具有1個負電荷的官能基而與銅原子進行配位的部位。例如可列舉酸解離常數(pKa)為12以下的酸基。具體而言,可列舉含有磷原子的酸基(磷酸二酯基、膦酸單酯基、次膦酸基等)、磺酸基、羧酸基、醯亞胺酸基等,較佳為磺酸基、羧酸基及含有磷原子的酸基中的 至少1種,更佳為磺酸基及羧酸基,進而更佳為羧酸基。 An example of a coordination site coordinated by an anion is a monoanionic coordination site. The monoanionic coordination site represents a site that coordinates with a copper atom via a functional group having one negative charge. For example, an acid group having an acid dissociation constant (pKa) of 12 or less can be cited. Specific examples thereof include an acid group (phosphoric acid diester group, phosphonic acid monoester group, phosphinic acid group, etc.) containing a phosphorus atom, a sulfonic acid group, a carboxylic acid group, a quinone acid group, and the like, and preferably a sulfonate. Acid group, carboxylic acid group and acid group containing phosphorus atom At least one kind is more preferably a sulfonic acid group and a carboxylic acid group, and still more preferably a carboxylic acid group.

利用非共用電子對進行配位的配位部位較佳為含有氧原子、氮原子、硫原子或磷原子作為配位原子,更佳為含有氧原子、氮原子或硫原子作為配位原子,進而更佳為含有氮原子作為配位原子。另外,較佳為利用非共用電子對進行配位的配位原子為氮原子、且鄰接於所述氮原子的原子為碳原子的形態,所述碳原子具有取代基亦較佳。藉由設為此種構成,銅錯合物的結構更容易變形,因此可進一步提昇色價。取代基較佳為碳數為1~10的烷基、碳數為6~12的芳基、羧酸基、碳數為1~12的烷氧基、碳數為2~12的醯基、碳數為1~12的烷硫基、鹵素原子。 The coordination site for coordination by the unshared electron pair preferably contains an oxygen atom, a nitrogen atom, a sulfur atom or a phosphorus atom as a coordinating atom, more preferably an oxygen atom, a nitrogen atom or a sulfur atom as a coordinating atom, and further More preferably, it contains a nitrogen atom as a coordinating atom. Further, it is preferred that the coordinating atom coordinated by the unshared electron pair is a nitrogen atom and the atom adjacent to the nitrogen atom is a carbon atom, and the carbon atom preferably has a substituent. With such a configuration, the structure of the copper complex is more easily deformed, so that the color price can be further improved. The substituent is preferably an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 12 carbon atoms, a carboxylic acid group, an alkoxy group having 1 to 12 carbon atoms, or a fluorenyl group having 2 to 12 carbon atoms. An alkylthio group having 1 to 12 carbon atoms and a halogen atom.

利用非共用電子對進行配位的配位原子可包含於環中,亦可包含於選自以下的群組(UE)中的至少1種部分結構中。 The coordinating atom coordinated by the non-shared electron pair may be included in the ring or may be included in at least one partial structure selected from the group (UE) below.

群組(UE) Group (UE)

群組(UE)中,R1分別獨立地表示氫原子、烷基、烯 基、炔基、芳基或雜芳基,R2分別獨立地表示氫原子、烷基、烯基、炔基、芳基、雜芳基、烷氧基、芳氧基、雜芳氧基、烷硫基、芳硫基、雜芳硫基、胺基或醯基。 In the group (UE), R 1 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group or a heteroaryl group, and R 2 each independently represents a hydrogen atom, an alkyl group, an alkenyl group, an alkynyl group, Aryl, heteroaryl, alkoxy, aryloxy, heteroaryloxy, alkylthio, arylthio, heteroarylthio, amine or fluorenyl.

R1所表示的烷基的含義與群組(AN)中的R中所說明的烷基相同,較佳的範圍亦相同。 The meaning of the alkyl group represented by R 1 is the same as the alkyl group described in R in the group (AN), and the preferred range is also the same.

R1所表示的烯基的碳數較佳為1~10,更佳為1~6。 The number of carbon atoms of the alkenyl group represented by R 1 is preferably from 1 to 10, more preferably from 1 to 6.

R1所表示的炔基的碳數較佳為1~10,更佳為1~6。 The alkynyl group represented by R 1 preferably has 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms.

R1所表示的雜芳基的含義與群組(AN)中的R中所說明的雜芳基相同,較佳的範圍亦相同。 The heteroaryl group represented by R 1 has the same meaning as the heteroaryl group described in R in the group (AN), and the preferred range is also the same.

R2所表示的烷基的含義與群組(UE)中的R1中所說明的烷基相同,較佳的範圍亦相同。 The meaning of the alkyl group represented by R 2 is the same as the alkyl group described in R 1 in the group (UE), and the preferred range is also the same.

R2所表示的烯基的碳數較佳為1~10,更佳為1~6。 The number of carbon atoms of the alkenyl group represented by R 2 is preferably from 1 to 10, more preferably from 1 to 6.

R2所表示的炔基的碳數較佳為1~10,更佳為1~6。 The alkynyl group represented by R 2 preferably has 1 to 10 carbon atoms, more preferably 1 to 6 carbon atoms.

R2所表示的芳基的含義與群組(UE)中的R1中所說明的芳基相同,較佳的範圍亦相同。 The meaning of the aryl group represented by R 2 is the same as the aryl group described in R 1 in the group (UE), and the preferred range is also the same.

R2所表示的雜芳基的含義與群組(UE)中的R1中所說明的雜芳基相同,較佳的範圍亦相同。 The heteroaryl group represented by R 2 has the same meaning as the heteroaryl group described in R 1 in the group (UE), and the preferred range is also the same.

R2所表示的烷氧基的碳數較佳為1~12。 The alkoxy group represented by R 2 preferably has 1 to 12 carbon atoms.

R2所表示的芳氧基的碳數較佳為6~18。 The aryloxy group represented by R 2 preferably has 6 to 18 carbon atoms.

R2所表示的雜芳氧基可為單環,亦可為多環。構成雜芳氧基的雜芳基的含義與群組(UE)中的R1中所說明的雜芳基相同,較佳的範圍亦相同。 The heteroaryloxy group represented by R 2 may be a single ring or a polycyclic ring. The heteroaryl group constituting the heteroaryloxy group has the same meaning as the heteroaryl group described in R 1 in the group (UE), and the preferred range is also the same.

R2所表示的烷硫基的碳數較佳為1~12。 The alkylthio group represented by R 2 preferably has 1 to 12 carbon atoms.

R2所表示的芳硫基的碳數較佳為6~18。 The arylthio group represented by R 2 preferably has 6 to 18 carbon atoms.

R2所表示的雜芳硫基可為單環,亦可為多環。構成雜芳硫基的雜芳基的含義與R1中所說明的雜芳基相同,較佳的範圍亦相同。 The heteroarylthio group represented by R 2 may be a single ring or a polycyclic ring. The heteroaryl group constituting the heteroarylthio group has the same meaning as the heteroaryl group described in R 1 , and the preferred range is also the same.

R2所表示的醯基的碳數較佳為2~12。 The carbon number of the fluorenyl group represented by R 2 is preferably from 2 to 12.

當利用非共用電子對進行配位的配位原子包含於環中時,包含配位原子的環可為單環,亦可為多環,另外,可為芳香族,亦可為非芳香族。包含配位原子的環較佳為5員環~12員環,更佳為5員環~7員環,進而更佳為5員環或6員環。 When a coordinating atom coordinated by an unshared electron pair is contained in a ring, the ring containing the coordinating atom may be a single ring or a polycyclic ring, and may be aromatic or non-aromatic. The ring containing the coordinating atom is preferably a 5-membered ring to a 12-membered ring, more preferably a 5-membered ring to a 7-membered ring, and more preferably a 5-membered ring or a 6-membered ring.

包含利用非共用電子對進行配位的配位原子的環可具有取代基。作為取代基,可列舉:碳數為1~10的直鏈狀、分支狀或環狀的烷基,碳數為6~12的芳基,鹵素原子,矽原子,碳數為1~12的烷氧基,碳數為1~12的醯基,碳數為1~12的烷硫基,羧酸基等。所述取代基可進而具有取代基。作為此種取代基,例如可列舉:含有包含利用非共用電子對進行配位的配位原子的環的基、含有選自所述群組(UE)中的至少1種部分結構的基、碳數為1~12的烷基、碳數為1~12的醯基、羥基等。 A ring comprising a coordinating atom coordinated by a non-shared electron pair may have a substituent. Examples of the substituent include a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 12 carbon atoms, a halogen atom, a halogen atom, and a carbon number of 1 to 12. The alkoxy group is a fluorenyl group having 1 to 12 carbon atoms, an alkylthio group having 1 to 12 carbon atoms, a carboxylic acid group or the like. The substituent may further have a substituent. Examples of such a substituent include a group containing a ring including a coordinating atom coordinated by a non-shared electron pair, a group containing at least one partial structure selected from the group (UE), and carbon. The number is 1 to 12 alkyl groups, the carbon number is 1 to 12 sulfhydryl groups, hydroxyl groups, and the like.

通式(i)中,n較佳為1~3,更佳為2或3,進而更佳為3。 In the formula (i), n is preferably from 1 to 3, more preferably 2 or 3, and still more preferably 3.

通式(i)中,n價的基較佳為n價的有機基,或包含n價的有機基與-O-、-SO-、-SO2-、-NRN1-、-CO-、-CS-的組合的基。 In the formula (i), the n-valent group is preferably an n-valent organic group, or an n-valent organic group and -O-, -SO-, -SO 2 -, -NR N1 -, -CO-, The base of the combination of -CS-.

n價的有機基較佳為烴基、氧基伸烷基、雜環基等,更佳為脂 肪族烴基或芳香族烴基。另外,n價的基可為含有選自以下的群組(AN-1)中的至少1種的基、包含利用非共用電子對進行配位的配位原子的環、或含有選自以下的群組(UE-1)中的至少1種的基。 The n-valent organic group is preferably a hydrocarbon group, an alkylene group, a heterocyclic group or the like, more preferably a fat. An aliphatic hydrocarbon group or an aromatic hydrocarbon group. Further, the n-valent group may be a group containing at least one selected from the group (AN-1) selected from below, a ring including a coordinating atom coordinated by an unshared electron pair, or a selected from the group consisting of A base of at least one of the groups (UE-1).

烴基可具有取代基,作為取代基,可列舉:鹵素原子(較佳為氟原子)、聚合性基(例如具有不飽和雙鍵的基(乙烯基、(甲基)丙烯醯基等)、環氧基、氧雜環丁烷基等)、烷基、磺酸基、羧酸基、含有磷原子的酸基、羧酸酯基(例如-CO2CH3)、羥基、烷氧基(例如甲氧基)、胺基、胺甲醯基、胺甲醯氧基、鹵化烷基(例如氟烷基、氯烷基)、(甲基)丙烯醯氧基等。當烴基具有取代基時,可進而具有取代基,作為取代基,可列舉烷基、所述聚合性基、鹵素原子等。 The hydrocarbon group may have a substituent, and examples of the substituent include a halogen atom (preferably a fluorine atom) and a polymerizable group (for example, a group having an unsaturated double bond (vinyl group, (meth)acryl fluorenyl group, etc.), or a ring. An oxy group, an oxetane group, etc.), an alkyl group, a sulfonic acid group, a carboxylic acid group, an acid group containing a phosphorus atom, a carboxylate group (for example, -CO 2 CH 3 ), a hydroxyl group, an alkoxy group (for example) Methoxy), an amine group, an amine methyl sulfhydryl group, an amine methyl methoxy group, a halogenated alkyl group (for example, a fluoroalkyl group, a chloroalkyl group), a (meth) acryloxy group, and the like. When the hydrocarbon group has a substituent, it may further have a substituent. Examples of the substituent include an alkyl group, the polymerizable group, and a halogen atom.

當所述烴基為一價時,較佳為烷基、烯基或芳基,更佳為芳基。當烴基為二價時,較佳為伸烷基、伸芳基或氧基伸烷基,更佳為伸芳基。當烴基為三價以上時,較佳為與所述一價的烴基或二價的烴基相對應者。 When the hydrocarbon group is monovalent, it is preferably an alkyl group, an alkenyl group or an aryl group, more preferably an aryl group. When the hydrocarbon group is divalent, it is preferably an alkyl group, an aryl group or an alkyl group, more preferably an aryl group. When the hydrocarbon group is trivalent or higher, it preferably corresponds to the monovalent hydrocarbon group or the divalent hydrocarbon group.

烷基及伸烷基可為直鏈狀、分支狀或環狀的任一種。直鏈狀的烷基及伸烷基的碳數較佳為1~20,更佳為1~10,進而更佳為1~8。分支狀的烷基及伸烷基的碳數較佳為3~20,更佳為3~12,進而更佳為3~8。環狀的烷基及伸烷基可為單環、多環的任一種。環狀的烷基及伸烷基的碳數較佳為3~20,更佳為4~10,進而更佳為6~10。 The alkyl group and the alkylene group may be any of a linear chain, a branched chain or a cyclic chain. The carbon number of the linear alkyl group and the alkyl group is preferably from 1 to 20, more preferably from 1 to 10, still more preferably from 1 to 8. The carbon number of the branched alkyl group and the alkyl group is preferably from 3 to 20, more preferably from 3 to 12, and still more preferably from 3 to 8. The cyclic alkyl group and the alkylene group may be either a single ring or a polycyclic ring. The carbon number of the cyclic alkyl group and the alkylene group is preferably from 3 to 20, more preferably from 4 to 10, still more preferably from 6 to 10.

烯基及伸烯基的碳數較佳為2~10,更佳為2~8,進而更佳為2~4。 The number of carbon atoms of the alkenyl group and the alkenyl group is preferably from 2 to 10, more preferably from 2 to 8, more preferably from 2 to 4.

芳基及伸芳基的碳數較佳為6~18,更佳為6~14,進而更佳為6~12。 The carbon number of the aryl group and the aryl group is preferably from 6 to 18, more preferably from 6 to 14, more preferably from 6 to 12.

雜環基可列舉於脂環基中具有雜原子者、或芳香族雜環基。作為雜環基,較佳為5員環或6員環。另外,雜環基為單環或縮合環,較佳為單環或縮合數為2~8的縮合環,更佳為單環或縮合數為2~4的縮合環。雜環基可具有取代基,作為取代基,其含義與所述烴基可具有的取代基相同。 The heterocyclic group may be a heterocyclic group or an aromatic heterocyclic group in the alicyclic group. As the heterocyclic group, a 5-membered ring or a 6-membered ring is preferred. Further, the heterocyclic group is a monocyclic ring or a condensed ring, preferably a monocyclic ring or a condensed ring having a condensation number of 2 to 8, more preferably a monocyclic ring or a condensed ring having a condensation number of 2 to 4. The heterocyclic group may have a substituent, and as a substituent, the meaning is the same as the substituent which the hydrocarbon group may have.

於-NRN1-中,RN1表示氫原子、烷基、芳基或芳烷基。作為RN1中的烷基,可為鏈狀、分枝狀、環狀的任一種。直鏈狀或分支狀的烷基的碳數較佳為1~20,更佳為1~12。環狀的烷基可為單環、多環的任一種。環狀的烷基的碳數較佳為3~20,更佳為4~14。 In -NR N1 -, R N1 represents a hydrogen atom, an alkyl group, an aryl group or an aralkyl group. The alkyl group in R N1 may be in the form of a chain, a branch, or a ring. The linear or branched alkyl group preferably has 1 to 20 carbon atoms, more preferably 1 to 12 carbon atoms. The cyclic alkyl group may be either a single ring or a polycyclic ring. The carbon number of the cyclic alkyl group is preferably from 3 to 20, more preferably from 4 to 14.

RN1中的芳基的碳數較佳為6~18,更佳為6~14。具體而言,可例示苯基、萘基等。作為RN1中的芳烷基,較佳為碳數為7~20的芳烷基,更佳為未經取代的碳數為7~15的芳烷基。 The carbon number of the aryl group in R N1 is preferably from 6 to 18, more preferably from 6 to 14. Specifically, a phenyl group, a naphthyl group, etc. are illustrated. The aralkyl group in R N1 is preferably an aralkyl group having 7 to 20 carbon atoms, more preferably an unsubstituted aralkyl group having 7 to 15 carbon atoms.

群組(UE-1) Group (UE-1)

[化4] [Chemical 4]

群組(UE-1)中的R1的含義與群組(UE)中的R1相同。 The same group (UE-1) and the meaning of R group (UE) 1 in R 1.

群組(AN-1) Group (AN-1)

群組(AN-1)中的X表示N或CR,R的含義與所述群組(AN)中的CR中所說明的R相同。 X in the group (AN-1) represents N or CR, and the meaning of R is the same as R described in the CR in the group (AN).

作為成為配位體的化合物的具體形態,較佳為至少具有2個配位部位的化合物。具體而言,可列舉:含有1個以上的利用陰離子進行配位的配位部位、及1個以上的利用非共用電子對進行配位的配位原子的化合物(以下,亦稱為化合物(A1)),含有2個以上的利用非共用電子對進行配位的配位原子的化合物(以下,亦稱為化合物(A2)),含有2個利用陰離子進行配位的配位 部位的化合物(以下,亦稱為化合物(A3))等。該些化合物可分別獨立地使用1種、或將2種以上組合使用。 The specific form of the compound to be a ligand is preferably a compound having at least two coordination sites. Specifically, a compound having one or more coordination sites coordinated by an anion and one or more coordination atoms coordinated by an unshared electron pair (hereinafter also referred to as a compound (A1) )), a compound containing two or more coordination atoms coordinated by an unshared electron pair (hereinafter also referred to as a compound (A2)), and having two coordination sites coordinated by an anion A compound at a site (hereinafter also referred to as a compound (A3)) or the like. These compounds may be used alone or in combination of two or more.

另外,作為成為配位體的化合物,亦可使用含有1個利用陰離子進行配位的配位部位的化合物。 Further, as the compound to be a ligand, a compound containing one coordination site coordinated by an anion may be used.

<<<<化合物(A1)>>>> <<<<化合物(A1)>>>>

化合物(A1)只要1分子內中的利用陰離子進行配位的配位部位與利用非共用電子對進行配位的配位原子的合計為2個以上即可,可為3個,亦可為4個。 In the compound (A1), the total number of the coordination sites coordinated by the anions in one molecule and the coordination atoms coordinated by the unshared electron pair may be two or more, and may be three or four. One.

作為化合物(A1),例如較佳為由下述式(i-1)所表示的化合物。 The compound (A1) is preferably a compound represented by the following formula (i-1).

X11-L11-Y11 (i-1) X 11 -L 11 -Y 11 (i-1)

X11表示由所述群組(AN)所表示的配位部位。 X 11 represents a coordination site represented by the group (AN).

Y11表示所述包含利用非共用電子對進行配位的配位原子的環、或由群組(UE)所表示的部分結構。 Y 11 represents the ring including a coordinating atom coordinated by a non-shared electron pair, or a partial structure represented by a group (UE).

L11表示單鍵或二價的連結基。作為二價的連結基,較佳為碳數為1~12的伸烷基、碳數為6~12的伸芳基、-SO-、-SO2-、-O-、或包含該些的組合的基。 L 11 represents a single bond or a divalent linking group. The divalent linking group is preferably an alkylene group having 1 to 12 carbon atoms, an extended aryl group having 6 to 12 carbon atoms, -SO-, -SO 2 -, -O-, or the like. The basis of the combination.

作為化合物(A1)的更詳細的例子,亦可列舉由下述通式(i-2)~通式(i-9)所表示的化合物。 Further, as a more detailed example of the compound (A1), a compound represented by the following formula (i-2) to formula (i-9) can also be mentioned.

X12-L12-Y12-L13-X13 (i-2) X 12 -L 12 -Y 12 -L 13 -X 13 (i-2)

Y13-L14-Y14-L15-X14 (i-3) Y 13 -L 14 -Y 14 -L 15 -X 14 (i-3)

Y15-L16-X15-L17-X16 (i-4) Y 15 -L 16 -X 15 -L 17 -X 16 (i-4)

Y16-L18-X17-L19-Y17 (i-5) Y 16 -L 18 -X 17 -L 19 -Y 17 (i-5)

X18-L20-Y18-L21-Y19-L22-X19 (i-6) X 18 -L 20 -Y 18 -L 21 -Y 19 -L 22 -X 19 (i-6)

X20-L23-Y20-L24-Y21-L25-Y22 (i-7) X 20 -L 23 -Y 20 -L 24 -Y 21 -L 25 -Y 22 (i-7)

Y23-L26-X21-L27-X22-L28-Y24 (i-8) Y 23 -L 26 -X 21 -L 27 -X 22 -L 28 -Y 24 (i-8)

Y25-L29-X23-L30-Y26-L31-Y27 (i-9) Y 25 -L 29 -X 23 -L 30 -Y 26 -L 31 -Y 27 (i-9)

通式(i-2)~通式(i-9)中,X12~X14、X16、X18~X20分別獨立地表示由所述群組(AN)所表示的配位部位。另外,X15、X17、X21~X23分別獨立地表示由所述群組(AN-1)所表示的配位部位。 In the general formulae (i-2) to (i-9), X 12 to X 14 , X 16 and X 18 to X 20 each independently represent a coordination site represented by the group (AN). Further, X 15 , X 17 , and X 21 to X 23 each independently represent a coordination site represented by the group (AN-1).

通式(i-2)~通式(i-9)中,L12~L31分別獨立地表示單鍵或二價的連結基。二價的連結基的含義與通式(i-1)中的L1表示二價的連結基的情況相同。 In the general formulae (i-2) to (i-9), L 12 to L 31 each independently represent a single bond or a divalent linking group. The meaning of the divalent linking group is the same as the case where L 1 in the formula (i-1) represents a divalent linking group.

作為化合物(A1),較佳為由式(i-10)或式(i-11)所表示的化合物。 The compound (A1) is preferably a compound represented by the formula (i-10) or the formula (i-11).

[化6] [Chemical 6]

式(i-10)中,X2表示包含利用陰離子進行配位的配位部位的基。Y2表示氧原子、氮原子、硫原子或磷原子。A1及A5分別獨立地表示碳原子、氮原子或磷原子。A2~A4分別獨立地表示碳原子、氧原子、氮原子、硫原子或磷原子。R1表示取代基。RX2表示取代基。n2表示0~3的整數。 In the formula (i-10), X 2 represents a group including a coordination site coordinated by an anion. Y 2 represents an oxygen atom, a nitrogen atom, a sulfur atom or a phosphorus atom. A 1 and A 5 each independently represent a carbon atom, a nitrogen atom or a phosphorus atom. A 2 to A 4 each independently represent a carbon atom, an oxygen atom, a nitrogen atom, a sulfur atom or a phosphorus atom. R 1 represents a substituent. R X2 represents a substituent. N2 represents an integer from 0 to 3.

式(i-10)中,X2可僅含有所述包含利用陰離子進行配位的配位部位的基,所述包含利用陰離子進行配位的配位部位的基可具有取代基。包含利用陰離子進行配位的配位部位的基可具有的取代基可列舉:鹵素原子、羧酸基、雜環基。作為取代基的雜環基可為單環,亦可為多環,另外,可為芳香族,亦可為非芳香族。構成雜環的雜原子的數量較佳為1~3。構成雜環的雜原子較佳為氮原子。 In the formula (i-10), X 2 may contain only the group including the coordination site coordinated by the anion, and the group including the coordination site coordinated by the anion may have a substituent. Examples of the substituent which the group including the coordination site coordinated by the anion may have include a halogen atom, a carboxylic acid group, and a heterocyclic group. The heterocyclic group as a substituent may be a single ring or a polycyclic ring, and may be aromatic or non-aromatic. The number of hetero atoms constituting the hetero ring is preferably from 1 to 3. The hetero atom constituting the hetero ring is preferably a nitrogen atom.

式(i-10)中,Y2較佳為氧原子、氮原子或硫原子,更佳為氧原子或氮原子,進而更佳為氮原子。 In the formula (i-10), Y 2 is preferably an oxygen atom, a nitrogen atom or a sulfur atom, more preferably an oxygen atom or a nitrogen atom, and still more preferably a nitrogen atom.

式(i-10)中,A1及A5較佳為碳原子。 In the formula (i-10), A 1 and A 5 are preferably a carbon atom.

式(i-10)中,A2及A3較佳為表示碳原子。A4較佳為表示碳原子或氮原子。 In the formula (i-10), A 2 and A 3 preferably represent a carbon atom. A 4 preferably represents a carbon atom or a nitrogen atom.

式(i-10)中,R1的含義與所述包含利用非共用電子對進行配 位的配位原子的環可具有的取代基相同。 In the formula (i-10), the meaning of R 1 is the same as the substituent which the ring containing the coordinating atom coordinated by the unshared electron pair may have.

式(i-10)中,RX2的含義與所述包含利用非共用電子對進行配位的配位原子的環可具有的取代基相同,較佳的範圍亦相同。 In the formula (i-10), the meaning of R X2 is the same as the substituent which the ring containing the coordinating atom coordinated by the unshared electron pair may have, and the preferred range is also the same.

式(i-10)中,n2表示0~3的整數,較佳為0或1,更佳為0。 In the formula (i-10), n2 represents an integer of 0 to 3, preferably 0 or 1, more preferably 0.

由式(i-10)所表示的化合物中,包含Y2的雜環可為單環結構,亦可為多環結構。作為包含Y2的雜環為單環結構時的具體例,可列舉:吡啶環、噠嗪環、嘧啶環、吡嗪環、三嗪環、吡喃環等。作為包含Y2的雜環為多環結構時的具體例,可列舉:喹啉環、異喹啉環、喹噁啉環、吖啶環等。 Among the compounds represented by the formula (i-10), the hetero ring containing Y 2 may have a single ring structure or a polycyclic structure. Specific examples of the case where the hetero ring containing Y 2 has a monocyclic structure include a pyridine ring, a pyridazine ring, a pyrimidine ring, a pyrazine ring, a triazine ring, and a pyran ring. Specific examples of the case where the hetero ring containing Y 2 has a polycyclic structure include a quinoline ring, an isoquinoline ring, a quinoxaline ring, and an acridine ring.

式(i-11)中,X3表示所述包含利用陰離子進行配位的配位部位的基。Y3表示氧原子、氮原子、硫原子或磷原子。A6及A9分別獨立地表示碳原子、氮原子或磷原子。A7及A8分別獨立地表示碳原子、氧原子、氮原子、硫原子或磷原子。R2表示取代基。RX3表示取代基。n3表示0~2的整數。 In the formula (i-11), X 3 represents the group including the coordination site coordinated by an anion. Y 3 represents an oxygen atom, a nitrogen atom, a sulfur atom or a phosphorus atom. A 6 and A 9 each independently represent a carbon atom, a nitrogen atom or a phosphorus atom. A 7 and A 8 each independently represent a carbon atom, an oxygen atom, a nitrogen atom, a sulfur atom or a phosphorus atom. R 2 represents a substituent. R X3 represents a substituent. N3 represents an integer from 0 to 2.

式(i-11)中,X3的含義與式(i-10)中的X2相同,較佳的範圍亦相同。 In the formula (i-11), X 3 has the same meaning as X 2 in the formula (i-10), and the preferred range is also the same.

式(i-11)中,Y3較佳為氧原子、氮原子或硫原子,更佳為氧原子或氮原子。 In the formula (i-11), Y 3 is preferably an oxygen atom, a nitrogen atom or a sulfur atom, more preferably an oxygen atom or a nitrogen atom.

式(i-11)中,A6較佳為碳原子或氮原子。A9較佳為碳原子。 In the formula (i-11), A 6 is preferably a carbon atom or a nitrogen atom. A 9 is preferably a carbon atom.

式(i-11)中,A7較佳為碳原子。A8較佳為碳原子、氮原子或硫原子。 In the formula (i-11), A 7 is preferably a carbon atom. A 8 is preferably a carbon atom, a nitrogen atom or a sulfur atom.

式(i-11)中,R2較佳為疏水性的取代基,更佳為碳數為1~30的烴基,進而更佳為碳數為3~30的烷基或碳數為6~30的芳基,特佳為碳數為3~15的烷基。 In the formula (i-11), R 2 is preferably a hydrophobic substituent, more preferably a hydrocarbon group having 1 to 30 carbon atoms, more preferably an alkyl group having 3 to 30 carbon atoms or a carbon number of 6~ The aryl group of 30 is particularly preferably an alkyl group having a carbon number of 3 to 15.

式(i-11)中,RX3的含義與式(i-10)中的RX2相同,較佳的範圍亦相同。 In the formula (i-11), R X3 has the same meaning as R X2 in the formula (i-10), and the preferred range is also the same.

式(i-11)中,n3較佳為0或1,更佳為0。 In the formula (i-11), n3 is preferably 0 or 1, more preferably 0.

由式(i-11)所表示的化合物中,包含Y3的雜環可為單環結構,亦可為多環結構。作為包含Y3的雜環為單環結構時的具體例,可列舉:吡唑環、咪唑環、三唑環、噁唑環、噻唑環、異噻唑環等。作為包含Y3的雜環為多環結構時的具體例,可列舉:吲哚環、異吲哚環、苯并呋喃環、異苯并呋喃環等。 Among the compounds represented by the formula (i-11), the hetero ring containing Y 3 may have a single ring structure or a polycyclic structure. Specific examples of the case where the hetero ring containing Y 3 is a monocyclic structure include a pyrazole ring, an imidazole ring, a triazole ring, an oxazole ring, a thiazole ring, and an isothiazole ring. Specific examples of the polycyclic structure in which the hetero ring containing Y 3 is a polycyclic structure include an anthracene ring, an isoindole ring, a benzofuran ring, and an isobenzofuran ring.

尤其,由式(i-11)所表示的化合物較佳為含有吡唑環的化合物且於吡唑環的5位上具有二級或三級的烷基。於本申請案說明書中,所謂由式(i-11)所表示的化合物為含有吡唑環的化合物時的吡唑環的5位,是指所述(i-11)中的Y3及A6表示氮原子、A7~A9表示碳原子時的R2的取代位置。吡唑環的5位上的二級或三級的烷基的碳數較佳為3~15,更佳為3~12。 In particular, the compound represented by the formula (i-11) is preferably a pyrazole ring-containing compound and has a secondary or tertiary alkyl group at the 5-position of the pyrazole ring. In the specification of the present application, the 5-position of the pyrazole ring in the case where the compound represented by the formula (i-11) is a pyrazole ring-containing compound means Y 3 and A in the above (i-11). 6 represents a nitrogen atom, and A 7 to A 9 represent a substitution position of R 2 in the case of a carbon atom. The carbon number of the secondary or tertiary alkyl group at the 5-position of the pyrazole ring is preferably from 3 to 15, more preferably from 3 to 12.

化合物(A1)的分子量較佳為1000以下,更佳為750以下,進而更佳為600以下,特佳為500以下。另外,化合物(A1)的分子量較佳為50以上,更佳為70以上,進而更佳為80以上。 The molecular weight of the compound (A1) is preferably 1,000 or less, more preferably 750 or less, still more preferably 600 or less, and particularly preferably 500 or less. Further, the molecular weight of the compound (A1) is preferably 50 or more, more preferably 70 or more, still more preferably 80 or more.

作為化合物(A1)的具體例,可列舉以下者。 Specific examples of the compound (A1) include the following.

[化7] [Chemistry 7]

<<<<化合物(A1)的鹽>>>> <<<<Salt of Compound (A1)>>>>

作為化合物(A1)的鹽,即包含利用陰離子進行配位的配位部位的鹽的化合物,例如較佳為金屬鹽。構成金屬鹽的金屬原子較佳為鹼金屬原子或鹼土金屬原子。作為鹼金屬原子,可列舉鈉、鉀等。作為鹼土金屬原子,可列舉鈣、鎂等。 As the salt of the compound (A1), that is, a compound containing a salt of a coordination site coordinated by an anion, for example, a metal salt is preferable. The metal atom constituting the metal salt is preferably an alkali metal atom or an alkaline earth metal atom. Examples of the alkali metal atom include sodium and potassium. Examples of the alkaline earth metal atom include calcium and magnesium.

<<<<化合物(A2)>>>> <<<<化合物(A2)>>>>

化合物(A2)只要於1分子內具有2個以上的利用非共用電子對進行配位的配位原子即可,可具有3個以上,較佳為具有2個~4個。 The compound (A2) may have two or more coordination atoms coordinated by an unshared electron pair in one molecule, and may have three or more, and preferably two to four.

化合物(A2)例如較佳為由下述通式(ii-1)所表示的化合物。 The compound (A2) is preferably, for example, a compound represented by the following formula (ii-1).

Y40-L40-Y41…(ii-1) Y 40 -L 40 -Y 41 ...(ii-1)

通式(ii-1)中,Y40及Y41分別獨立地表示包含利用非共用電子對進行配位的配位原子的環、或由群組(UE)所表示的部分結構。 In the general formula (ii-1), Y 40 and Y 41 each independently represent a ring including a coordinating atom coordinated by an unshared electron pair or a partial structure represented by a group (UE).

通式(ii-1)中,L40表示單鍵或二價的連結基。當L40表示二價的連結基時,較佳為碳數為1~12的伸烷基、碳數為6~12的伸芳基、-SO-、-O-、-SO2-或包含該些的組合的基,更佳為碳數為1~3的伸烷基,伸苯基或-SO2-。 In the formula (ii-1), L 40 represents a single bond or a divalent linking group. When L 40 represents a divalent linking group, it is preferably an alkylene group having 1 to 12 carbon atoms, an extended aryl group having 6 to 12 carbon atoms, -SO-, -O-, -SO 2 - or The combination of these groups is more preferably an alkylene group having a carbon number of 1 to 3, a phenyl group or a -SO 2 - group.

作為化合物(A2)的更詳細的例子,亦可列舉由下述通式(ii-2)或通式(ii-3)所表示的化合物。 Further, as a more detailed example of the compound (A2), a compound represented by the following formula (ii-2) or formula (ii-3) can also be mentioned.

Y42-L41-Y43-L42-Y44 (ii-2) Y 42 -L 41 -Y 43 -L 42 -Y 44 (ii-2)

Y45-L43-Y46-L44-Y47-L45-Y48 (ii-3) Y 45 -L 43 -Y 46 -L 44 -Y 47 -L 45 -Y 48 (ii-3)

通式(ii-2)及通式(ii-3)中,Y42、Y44、Y45及Y48分別獨 立地表示包含利用非共用電子對進行配位的配位原子的環、或由群組(UE)所表示的部分結構。 In the general formula (ii-2) and the general formula (ii-3), Y 42 , Y 44 , Y 45 and Y 48 each independently represent a ring including a coordinating atom coordinated by a non-shared electron pair, or Part of the structure represented by the group (UE).

另外,Y43、Y46、Y47分別獨立地為包含利用非共用電子對進行配位的配位原子的環、或由所述群組(UE-1)所表示的部分結構。 Further, Y 43 , Y 46 and Y 47 are each independently a ring including a coordinating atom coordinated by an unshared electron pair or a partial structure represented by the group (UE-1).

通式(ii-2)及通式(ii-3)中,L41~L45分別獨立地表示單鍵或二價的連結基。二價的連結基的含義與通式(ii-1)中的L40表示二價的連結基的情況相同,較佳的範圍亦相同。 In the general formula (ii-2) and the general formula (ii-3), L 41 to L 45 each independently represent a single bond or a divalent linking group. The meaning of the divalent linking group is the same as the case where L 40 in the formula (ii-1) represents a divalent linking group, and the preferred range is also the same.

化合物(A2)的分子量較佳為1000以下,更佳為750以下,進而更佳為600以下,特佳為500以下。另外,化合物(A2)的分子量較佳為50以上,更佳為70以上,進而更佳為80以上。 The molecular weight of the compound (A2) is preferably 1,000 or less, more preferably 750 or less, still more preferably 600 or less, and particularly preferably 500 or less. Further, the molecular weight of the compound (A2) is preferably 50 or more, more preferably 70 or more, still more preferably 80 or more.

作為化合物(A2)的具體例,可列舉以下者。 Specific examples of the compound (A2) include the following.

<<<<化合物(A3)>>>> <<<<化合物(A3)>>>>

化合物(A3)具有2個利用陰離子進行配位的配位部位。利 用陰離子進行配位的配位部位的含義與所述利用陰離子進行配位的配位部位相同。 The compound (A3) has two coordination sites coordinated by an anion. Profit The meaning of the coordination site coordinated by the anion is the same as that of the coordination site coordinated by the anion.

作為化合物(A3),較佳為由下述通式(iii-1)所表示的化合物。 The compound (A3) is preferably a compound represented by the following formula (iii-1).

X50-L50-X51 (iii-1) X 50 -L 50 -X 51 (iii-1)

通式(iii-1)中,X50及X51分別獨立地表示利用陰離子進行配位的配位部位,其含義與所述利用陰離子進行配位的配位部位相同,較佳為單陰離子性配位部位。 In the formula (iii-1), X 50 and X 51 each independently represent a coordination site coordinated by an anion, and the meaning thereof is the same as that of the coordination site coordinated by the anion, and is preferably monoanionic. Coordination site.

通式(iii-1)中,L50表示單鍵或二價的連結基。作為二價的連結基,較佳為碳數為1~20的伸烷基、碳數為2~10的伸烯基、碳數為6~18的伸芳基、雜環基、-O-、-S-、-NRN1-、-CO-、-CS-、-SO2-、或包含該些的組合的基。RN1較佳為氫原子、碳數為1~12的烷基、碳數為6~18的芳基或碳數為7~20的芳烷基。 In the formula (iii-1), L 50 represents a single bond or a divalent linking group. The divalent linking group is preferably an alkylene group having 1 to 20 carbon atoms, an extended alkenyl group having 2 to 10 carbon atoms, an extended aryl group having 6 to 18 carbon atoms, a heterocyclic group, and -O-. , -S-, -NR N1 -, -CO-, -CS-, -SO 2 -, or a group comprising a combination of these. R N1 is preferably a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, an aryl group having 6 to 18 carbon atoms or an aralkyl group having 7 to 20 carbon atoms.

化合物(A3)較佳為含有選自磺酸基及羧酸基中的1種以上,更佳為含有磺酸基及羧酸基。藉由使用含有選自磺酸基及羧酸基中的至少1種的化合物,而可進一步提昇色價。 The compound (A3) preferably contains one or more selected from the group consisting of a sulfonic acid group and a carboxylic acid group, and more preferably contains a sulfonic acid group and a carboxylic acid group. The color valence can be further enhanced by using a compound containing at least one selected from the group consisting of a sulfonic acid group and a carboxylic acid group.

化合物(A3)的分子量較佳為1000以下,更佳為750以下,進而更佳為600以下,特佳為500以下。另外,化合物(A3)的分子量較佳為50以上,更佳為70以上,進而更佳為80以上。 The molecular weight of the compound (A3) is preferably 1,000 or less, more preferably 750 or less, still more preferably 600 or less, and particularly preferably 500 or less. Further, the molecular weight of the compound (A3) is preferably 50 or more, more preferably 70 or more, still more preferably 80 or more.

作為化合物(A3)的具體例,可列舉(1)具有磺酸基、羧酸 基及含有磷原子的酸基中的至少1種的化合物,更佳為(2)具有2個以上的酸基的形態,進而更佳為(3)具有磺酸基與羧酸基的形態。該些形態中,紅外線吸收性能更有效地發揮。進而,藉由使用具有磺酸基及羧酸基的化合物,而可進一步提昇色價。 Specific examples of the compound (A3) include (1) a sulfonic acid group and a carboxylic acid. The compound having at least one of a group and an acid group containing a phosphorus atom is more preferably (2) having two or more acid groups, and more preferably (3) having a form of a sulfonic acid group and a carboxylic acid group. In these forms, infrared absorption performance is more effectively exhibited. Further, by using a compound having a sulfonic acid group and a carboxylic acid group, the color price can be further improved.

<<<<具有1個利用陰離子進行配位的配位部位的化合物>>>> <<<<Compound with one coordination site coordinated by anion>>>>

作為成為配位體的化合物,亦可使用具有1個利用陰離子進行配位的配位部位的化合物。例如可列舉有機酸化合物(例如磺酸化合物、羧酸化合物、磷酸化合物)或其鹽等,較佳為具有磺酸基、羧酸基及含有磷原子的酸基中的至少1種的化合物。 As the compound to be a ligand, a compound having one coordination site coordinated by an anion can also be used. For example, an organic acid compound (for example, a sulfonic acid compound, a carboxylic acid compound, a phosphoric acid compound) or a salt thereof is preferable, and at least one compound having a sulfonic acid group, a carboxylic acid group, and an acid group containing a phosphorus atom is preferable.

磺酸化合物較佳為由下述式(I)所表示的化合物。 The sulfonic acid compound is preferably a compound represented by the following formula (I).

式(I) Formula (I)

式(I)中,R7表示一價的有機基。 In the formula (I), R 7 represents a monovalent organic group.

作為具體的一價的有機基,並無特別限定,但可列舉直鏈狀、分支狀或環狀的烷基、烯基、芳基。此處,該些基亦可為介於二價的連結基(例如伸烷基、伸環烷基、伸芳基、-O-、-S-、-CO-、 -COO-、-OCO-、-SO2-、-NR-(R為氫原子或烷基)等)之間基。另外,一價的有機基可具有取代基。 The specific monovalent organic group is not particularly limited, and examples thereof include a linear, branched or cyclic alkyl group, an alkenyl group, and an aryl group. Here, the groups may also be divalent linking groups (eg, alkyl, cycloalkyl, aryl, -O-, -S-, -CO-, -COO-, -OCO-). a group between -SO 2 -, -NR- (R is a hydrogen atom or an alkyl group). Further, the monovalent organic group may have a substituent.

作為直鏈狀或分支狀的烷基,較佳為碳數為1~20的烷基,更佳為碳數為1~12的烷基,進而更佳為碳數為1~8的烷基。 The linear or branched alkyl group is preferably an alkyl group having 1 to 20 carbon atoms, more preferably an alkyl group having 1 to 12 carbon atoms, and still more preferably an alkyl group having 1 to 8 carbon atoms. .

環狀的烷基可為單環、多環的任一種。作為環狀的烷基,較佳為碳數為3~20的環烷基,更佳為碳數為4~10的環烷基,進而更佳為碳數為6~10的環烷基。作為烯基,較佳為碳數為2~10的烯基,更佳為碳數為2~8的烯基,進而更佳為碳數為2~4的烯基。 The cyclic alkyl group may be either a single ring or a polycyclic ring. The cyclic alkyl group is preferably a cycloalkyl group having 3 to 20 carbon atoms, more preferably a cycloalkyl group having 4 to 10 carbon atoms, and still more preferably a cycloalkyl group having 6 to 10 carbon atoms. The alkenyl group is preferably an alkenyl group having 2 to 10 carbon atoms, more preferably an alkenyl group having 2 to 8 carbon atoms, and still more preferably an alkenyl group having 2 to 4 carbon atoms.

作為芳基,較佳為碳數為6~18的芳基,更佳為碳數為6~14的芳基,進而更佳為碳數為6~10的芳基。 The aryl group is preferably an aryl group having 6 to 18 carbon atoms, more preferably an aryl group having 6 to 14 carbon atoms, and still more preferably an aryl group having 6 to 10 carbon atoms.

作為二價的連結基的伸烷基、伸環烷基、伸芳基可列舉自所述烷基、環烷基、芳基中去除1個氫原子所衍生出的二價的連結基。 Examples of the alkylene group, the extended cycloalkyl group, and the extended aryl group which are a divalent linking group include a divalent linking group derived by removing one hydrogen atom from the alkyl group, the cycloalkyl group, and the aryl group.

作為一價的有機基可具有的取代基,可例示:烷基、聚合性基(例如乙烯基、(甲基)丙烯醯基、環氧基、氧雜環丁烷基等)、鹵素原子、羧酸基、羧酸酯基(例如-CO2CH3等)、羥基、醯胺基、鹵化烷基(例如氟烷基、氯烷基)等。 Examples of the substituent which the monovalent organic group may have include an alkyl group, a polymerizable group (for example, a vinyl group, a (meth)acrylinyl group, an epoxy group, an oxetanyl group, etc.), a halogen atom, A carboxylic acid group, a carboxylate group (for example, -CO 2 CH 3 or the like), a hydroxyl group, a decylamino group, a halogenated alkyl group (for example, a fluoroalkyl group, a chloroalkyl group) or the like.

由式(I)所表示的磺酸化合物或其鹽的分子量較佳為80~750,更佳為80~600,進而更佳為80~450。 The molecular weight of the sulfonic acid compound represented by the formula (I) or a salt thereof is preferably from 80 to 750, more preferably from 80 to 600, still more preferably from 80 to 450.

作為(1)具有磺酸基、羧酸基及含有磷原子的酸基中的至少1種的化合物的具體例,可列舉以下者。另外,作為較佳 例,亦可列舉後述的形態(2)、(3)中所記載的化合物之中,相當於本形態的化合物。 Specific examples of the compound (1) having at least one of a sulfonic acid group, a carboxylic acid group, and an acid group containing a phosphorus atom include the following. In addition, as a better In addition, among the compounds described in the forms (2) and (3) to be described later, the compounds corresponding to the present embodiment are also exemplified.

[化11] [11]

[化12] [化12]

作為(2)具有至少2個以上的酸基的化合物的具體例,可列舉以下者。另外,作為較佳例,亦可列舉後述的形態(3)中所記載的化合物之中,相當於本形態的化合物。 Specific examples of the compound (2) having at least two acid groups include the following. In addition, as a preferable example, among the compounds described in the form (3) to be described later, a compound corresponding to the present embodiment may be mentioned.

[化13] [Chemistry 13]

作為(3)具有磺酸基及羧酸基的化合物的具體例,可列舉以下者。另外,亦可列舉由後述的式(I)所表示的具有磺酸基及羧酸基的化合物的具體例。 Specific examples of the compound having (3) a sulfonic acid group and a carboxylic acid group include the following. Further, specific examples of the compound having a sulfonic acid group and a carboxylic acid group represented by the formula (I) to be described later are also mentioned.

<<<聚合物型的銅化合物>>> <<<Polymer type copper compound>>>

銅化合物為藉由包含配位部位的聚合體(A1)與銅成分的反應所獲得的銅化合物(聚合物型的銅化合物)亦較佳。可認為聚合物型的銅化合物藉由配位部位與銅成分的銅進行配位,而使聚合物型的銅化合物的結構變形,可獲得可見光區域的高透過性,且近紅外線的吸光能力提昇,進而色價亦提昇。另外,聚合物型的銅化合物將銅作為起點,並於聚合物的側鏈間形成交聯結構,因此可獲得耐熱性優異的膜。 The copper compound is preferably a copper compound (polymer type copper compound) obtained by a reaction of a polymer (A1) containing a coordination site with a copper component. It is considered that the polymer type copper compound is coordinated with copper of the copper component by the coordination site to deform the structure of the polymer type copper compound, and high transmittance in the visible light region can be obtained, and the light absorption ability of the near infrared ray is improved. And the price of color has also increased. Further, since the polymer type copper compound has copper as a starting point and forms a crosslinked structure between the side chains of the polymer, a film excellent in heat resistance can be obtained.

作為銅成分,較佳為含有二價的銅的化合物。銅成分中的銅含量較佳為2質量%~40質量%,更佳為5質量%~40質量%。銅成分可僅使用1種,亦可使用2種以上。作為含有銅的化合物,例如可使用氧化銅或銅鹽。銅鹽更佳為二價的銅。作為銅鹽,特佳為氫氧化銅、乙酸銅及硫酸銅。 As the copper component, a compound containing divalent copper is preferred. The copper content in the copper component is preferably from 2% by mass to 40% by mass, more preferably from 5% by mass to 40% by mass. The copper component may be used alone or in combination of two or more. As the copper-containing compound, for example, copper oxide or a copper salt can be used. The copper salt is more preferably a divalent copper. As the copper salt, copper hydroxide, copper acetate, and copper sulfate are particularly preferred.

相對於聚合體(A1)的配位部位(較佳為酸基或其鹽)1當 量,與聚合體(A1)進行反應的銅成分的量較佳為0.05當量~1當量,更佳為0.1當量~0.8當量,進而更佳為0.2當量~0.5當量。藉由將銅成分的量設為此種範圍,而存在可獲得具有更高的近紅外線遮蔽性的硬化膜的傾向。 Relative to the coordination site of the polymer (A1) (preferably an acid group or a salt thereof) The amount of the copper component to be reacted with the polymer (A1) is preferably from 0.05 equivalents to 1 equivalent, more preferably from 0.1 equivalents to 0.8 equivalents, still more preferably from 0.2 equivalents to 0.5 equivalents. By setting the amount of the copper component to such a range, there is a tendency that a cured film having a higher near-infrared ray shielding property can be obtained.

作為配位部位,可列舉針對銅成分利用非共用電子對進行配位的配位部位、針對銅成分利用陰離子進行配位的配位部位。 Examples of the coordination site include a coordination site in which a copper component is coordinated by an unshared electron pair, and a coordination site in which a copper component is coordinated by an anion.

針對銅成分利用非共用電子對進行配位的配位原子的含義與所述利用非共用電子對進行配位的配位原子相同,較佳的範圍亦相同。作為配位部位的具體例,可列舉所述成為配位體的化合物中所說明者。 The meaning of the coordinating atom for the coordination of the copper component by the unshared electron pair is the same as the coordinating atom for coordinating with the unshared electron pair, and the preferred range is also the same. Specific examples of the coordination site include those described as the ligand.

針對銅成分利用陰離子進行配位的配位部位的含義與所述利用陰離子進行配位的配位部位相同,可例示酸基或其鹽。酸基較佳為與銅成分進行配位鍵結者。具體而言,可列舉酸解離常數(pKa)為12以下的酸基,較佳為磺酸基、羧酸基、磷酸基、膦酸基、次膦酸基、醯亞胺酸基、甲基化物酸基等。酸基較佳為羧酸基或磺酸基,更佳為磺酸基。酸基可僅為1種,亦可為2種以上。作為酸基的鹽,可列舉鈉鹽等金屬鹽(特別是鹼金屬鹽)、四丁基銨鹽等。 The meaning of the coordination site in which the copper component is coordinated by the anion is the same as the coordination site in which the anion is coordinated, and an acid group or a salt thereof can be exemplified. The acid group is preferably a coordinate bond with the copper component. Specifically, an acid group having an acid dissociation constant (pKa) of 12 or less is preferable, and a sulfonic acid group, a carboxylic acid group, a phosphoric acid group, a phosphonic acid group, a phosphinic acid group, a guanidinoic acid group, and a methyl group are preferred. An acid group or the like. The acid group is preferably a carboxylic acid group or a sulfonic acid group, more preferably a sulfonic acid group. The acid group may be one type or two or more types. The salt of the acid group may, for example, be a metal salt such as a sodium salt (particularly an alkali metal salt) or a tetrabutylammonium salt.

再者,配位部位只要包含於其主鏈及側鏈的至少一者中即可,較佳為至少包含於側鏈中。 Further, the coordination site may be included in at least one of the main chain and the side chain, and is preferably contained in at least the side chain.

聚合物型的銅化合物較佳為於側鏈上含有由下述式(1)所表示的基。 The polymer type copper compound preferably contains a group represented by the following formula (1) in a side chain.

*-L1-Y1…(1) *-L 1 -Y 1 ...(1)

通式(1)中,L表示單鍵或連結基,Y1表示具有選自針對銅成分利用陰離子進行配位的配位部位、及針對銅成分利用非共用電子對進行配位的配位原子中的1種以上的基,*表示與聚合物的主鏈的連結鍵。 In the formula (1), L represents a single bond or a linking group, and Y 1 represents a coordination site having a ligand selected from an anion coordinated to a copper component and a coordination atom coordinated to a copper component by an unshared electron pair. One or more of the groups, * represents a bond to the main chain of the polymer.

通式(1)中,Y1表示具有選自針對銅成分利用陰離子進行配位的配位部位、及針對銅成分利用非共用電子對進行配位的配位原子中的1種以上的基。 In the general formula (1), Y 1 represents one or more kinds of a coordinating site selected from the group consisting of a coordinating site which is coordinated by an anion with respect to a copper component, and a coordinating atom which is coordinated by a non-shared electron pair with respect to a copper component.

通式(1)中,當L1表示連結基時,作為二價的連結基,例如可列舉:二價的烴基、伸雜芳基、-O-、-S-、-CO-、-COO-、-OCO-、-SO2-、-NX-(X表示氫原子或烷基,較佳為氫原子)、或包含該些的組合的基。 In the general formula (1), when L 1 represents a linking group, examples of the divalent linking group include a divalent hydrocarbon group, a heteroaryl group, -O-, -S-, -CO-, -COO. -, -OCO-, -SO 2 -, -NX- (X represents a hydrogen atom or an alkyl group, preferably a hydrogen atom), or a group comprising a combination of these.

作為二價的烴基,可列舉直鏈狀、分支狀或環狀的伸烷基,或伸芳基。烴基可具有取代基,但較佳為未經取代。 The divalent hydrocarbon group may, for example, be a linear, branched or cyclic alkylene group or an extended aryl group. The hydrocarbon group may have a substituent, but is preferably unsubstituted.

直鏈狀的伸烷基的碳數較佳為1~30,更佳為1~15,進而更佳為1~6。另外,分支狀的伸烷基的碳數較佳為3~30,更佳為3~15,進而更佳為3~6。 The carbon number of the linear alkyl group is preferably from 1 to 30, more preferably from 1 to 15, more preferably from 1 to 6. Further, the carbon number of the branched alkyl group is preferably from 3 to 30, more preferably from 3 to 15, more preferably from 3 to 6.

環狀的伸烷基可為單環、多環的任一種。環狀的伸烷基的碳數較佳為3~20,更佳為4~10,進而更佳為6~10。 The cyclic alkyl group may be either a single ring or a polycyclic ring. The carbon number of the cyclic alkyl group is preferably from 3 to 20, more preferably from 4 to 10, and still more preferably from 6 to 10.

伸芳基的碳數較佳為6~18,更佳為6~14,進而更佳為6~ 10,特佳為伸苯基。 The carbon number of the aryl group is preferably from 6 to 18, more preferably from 6 to 14, and even more preferably from 6 to 6. 10, especially good for stretching phenyl.

作為伸雜芳基,並無特別限定,但較佳為5員環或6員環。另外,伸雜芳基可為單環,亦可為縮合環,較佳為單環或縮合數為2~8的縮合環,更佳為單環或縮合數為2~4的縮合環。 The heteroaryl group is not particularly limited, but is preferably a 5-membered ring or a 6-membered ring. Further, the heteroaryl group may be a single ring or a condensed ring, preferably a monocyclic ring or a condensed ring having a condensation number of 2 to 8, more preferably a single ring or a condensation ring having a condensation number of 2 to 4.

當L1表示三價以上的連結基時,可列舉作為所述二價的連結基的例子所列舉的基之中,去除1個以上的氫原子而成的基。 When L 1 represents a trivalent or higher linking group, a group in which one or more hydrogen atoms are removed among the groups exemplified as the divalent linking group may be mentioned.

<<<<具有利用非共用電子對進行配位的配位原子的基>>>> <<<<Bases of Coordinating Atoms Coordinating with Non-Shared Electron Pairs>>>>

所述通式(1)中,當Y1表示具有利用非共用電子對進行配位的配位原子的基時,作為Y1,例如可列舉由下述式(1a1)或式(1a2)所表示的基。 In the above formula (1), when Y 1 represents a group having a coordinating atom coordinated by an unshared electron pair, Y 1 is , for example, a formula (1a1) or a formula (1a2) The base of the representation.

*-L11-(Y11)p…(1a1) *-L 11 -(Y 11 ) p ...(1a1)

*-L11-(Y11a-L12-Y11)p…(1a2) *-L 11 -(Y 11a -L 12 -Y 11 ) p ...(1a2)

「*」表示與式(1)的L1的連結鍵。 "*" indicates a link to L 1 of the formula (1).

L11表示單鍵或(p+1)價的連結基。當L11表示二價的連結基時,較佳為碳數為1~12的伸烷基、碳數為6~12的伸芳基、-CO-、-COO-、-OCO-、-SO2-、-O-、-NR10-(R10表示氫原子或烷基,較佳為氫原子)、或包含該些的組合的基。 L 11 represents a single bond or a (p+1)-valent linking group. When L 11 represents a divalent linking group, an alkylene group having 1 to 12 carbon atoms, an extended aryl group having 6 to 12 carbon atoms, -CO-, -COO-, -OCO-, -SO are preferred. 2 -, -O-, -NR 10 - (R 10 represents a hydrogen atom or an alkyl group, preferably a hydrogen atom), or a group comprising a combination of these.

當L11表示三價以上的連結基時,可列舉作為所述二價的連結基的例子所列舉的基之中,去除1個以上的氫原子而成的基。 When L 11 represents a trivalent or higher linking group, a group in which one or more hydrogen atoms are removed among the groups exemplified as the divalent linking group may be mentioned.

L12表示單鍵或二價的連結基。作為二價的連結基,可較佳地列舉L11中所說明的二價的連結基。L12更佳為單鍵、伸烷基、或包含-NH-與-CO-的組合的基。 L 12 represents a single bond or a divalent linking group. The divalent linking group described in L 11 is preferably exemplified as the divalent linking group. L 12 is more preferably a single bond, an alkyl group, or a group comprising a combination of -NH- and -CO-.

Y11表示包含利用非共用電子對進行配位的配位原子的環、或由所述群組(UE)所表示的部分結構。當p表示2以上的整數時,多個Y11可相同,亦可不同。 Y 11 represents a ring including a coordinating atom coordinated by a non-shared electron pair, or a partial structure represented by the group (UE). When p represents an integer of 2 or more, a plurality of Y 11 's may be the same or different.

Y11a表示包含利用非共用電子對進行配位的配位原子的環、或選自所述群組(UE-1)中的至少1種。當p表示2以上的整數時,多個Y11a可相同,亦可不同。 Y 11a represents a ring including a coordinating atom coordinated by a non-shared electron pair, or at least one selected from the group (UE-1). When p represents an integer of 2 or more, a plurality of Y 11a may be the same or different.

式(1a1)及式(1a2)中,p表示1以上的整數,較佳為2以上。上限例如較佳為5以下,更佳為3以下。 In the formula (1a1) and the formula (1a2), p represents an integer of 1 or more, preferably 2 or more. The upper limit is, for example, preferably 5 or less, more preferably 3 or less.

<<<<具有1個以上的利用非共用電子對進行配位的配位原子與1個以上的利用陰離子進行配位的配位部位的基>>>> <<<<The base of a coordination site having one or more coordination atoms coordinated by an unshared electron pair and one or more coordination sites using an anion>>>>

所述通式(1)中,當Y1表示具有1個以上的利用非共用電子對進行配位的配位原子與1個以上的利用陰離子進行配位的配位部位的基時,作為Y1,例如可列舉由下述式所表示的基。 In the above formula (1), when Y 1 represents a group having one or more coordination atoms coordinated by an unshared electron pair and one or more coordination sites coordinated by an anion, Y is represented as Y. 1 is , for example, a group represented by the following formula.

*-L21-(Y21a-L23-Y22)q…(1b1) *-L 21 -(Y 21a -L 23 -Y 22 ) q ...(1b1)

*-L21-(Y22a-L23-Y21)q…(1b2) *-L 21 -(Y 22a -L 23 -Y 21 ) q ...(1b2)

*-L22-(Y21)q(Y22)r…(1b3) *-L 22 -(Y 21 ) q (Y 22 ) r ...(1b3)

*-L22-(Y21a-L23-Y22)q(Y21)r…(1b4) *-L 22 -(Y 21a -L 23 -Y 22 ) q (Y 21 ) r ...(1b4)

*-L22-(Y22a-L23-Y21)q(Y21)r…(1b5) *-L 22 -(Y 22a -L 23 -Y 21 ) q (Y 21 ) r ...(1b5)

*-L22-(Y21a-L23-Y22)q(Y22)r…(1b6) *-L 22 -(Y 21a -L 23 -Y 22 ) q (Y 22 ) r ...(1b6)

*-L22-(Y22a-L23-Y21)q(Y22)r…(1b7) *-L 22 -(Y 22a -L 23 -Y 21 ) q (Y 22 ) r ...(1b7)

「*」表示與式(1)的L1的連結鍵。 "*" indicates a link to L 1 of the formula (1).

L21表示單鍵或(q+1)價的連結基。L21的含義與式(1a1)的L11相同,較佳的範圍亦相同。 L 21 represents a single bond or a (q+1)-valent linking group. The meaning of L 21 is the same as L 11 of the formula (1a1), and the preferred range is also the same.

L22表示單鍵或(q+r+1)價的連結基。L22的含義與式(1a1)的L11相同,較佳的範圍亦相同。 L 22 represents a single bond or a (q+r+1)-valent linking group. L 22 has the same meaning as L 11 of the formula (1a1), and the preferred range is also the same.

L23表示單鍵或二價的連結基。作為二價的連結基,可較佳地列舉式(1a1)的L11中所說明的二價的連結基。L23更佳為單鍵、伸烷基、或包含-NH-與-CO-的組合的基。 L 23 represents a single bond or a divalent linking group. As the divalent linking group, a divalent linking group described in L 11 of the formula (1a1) can be preferably mentioned. L 23 is more preferably a single bond, an alkylene group, or a group containing a combination of -NH- and -CO-.

Y21表示包含利用非共用電子對進行配位的配位原子的環、或由所述群組(UE)所表示的部分結構。當q、r表示2以上的整數時,多個Y21可相同,亦可不同。 Y 21 represents a ring including a coordinating atom coordinated by a non-shared electron pair, or a partial structure represented by the group (UE). When q and r represent an integer of 2 or more, a plurality of Y 21 may be the same or different.

Y21a表示包含利用非共用電子對進行配位的配位原子的環、或選自所述群組(UE-1)中的至少1種。當q、r表示2以上的整數時,多個Y21a可相同,亦可不同。 Y 21a represents a ring including a coordinating atom coordinated by a non-shared electron pair, or at least one selected from the group (UE-1). When q and r represent an integer of 2 or more, the plurality of Y 21a may be the same or different.

Y22表示由所述群組(AN)所表示的部分結構。當q、r表示2以上的整數時,多個Y22可相同,亦可不同。 Y 22 represents a partial structure represented by the group (AN). When q and r represent an integer of 2 or more, a plurality of Y 22 may be the same or different.

Y22a表示選自所述群組(AN-1)中的至少1種。 Y 22a represents at least one selected from the group (AN-1).

q表示1以上的整數,較佳為1~5,特佳為1~3。 q represents an integer of 1 or more, preferably 1 to 5, and particularly preferably 1 to 3.

r表示1以上的整數,較佳為1~5,特佳為1~3。 r represents an integer of 1 or more, preferably 1 to 5, and particularly preferably 1 to 3.

q+r表示2以上,較佳為2~5,特佳為2~3。 q+r represents 2 or more, preferably 2 to 5, and particularly preferably 2 to 3.

<<<<具有利用陰離子進行配位的配位部位的基>>>> <<<<Bases of coordination sites with coordination with anions>>>>

所述通式(1)中,當Y1表示具有利用陰離子進行配位的配位部位的基時,作為Y1,例如可列舉由下述式(1c1)或式(1c2)所表示的基。 In the above formula (1), when Y 1 represents a group having a coordination site coordinated by an anion, examples of Y 1 include a group represented by the following formula (1c1) or formula (1c2). .

*-L31-(Y31)p…(1c1) *-L 31 -(Y 31 ) p ...(1c1)

*-L31-(Y31a-L32-Y31)p…(1c2) *-L 31 -(Y 31a -L 32 -Y 31 ) p ...(1c2)

「*」表示與式(1)的L1的連結鍵。 "*" indicates a link to L 1 of the formula (1).

L31表示單鍵或(p+1)價的連結基。L31的含義與式(1a1)的L11相同,較佳的範圍亦相同。 L 31 represents a single bond or a (p+1)-valent linking group. L 31 has the same meaning as L 11 of the formula (1a1), and the preferred range is also the same.

L32表示單鍵或二價的連結基。作為二價的連結基,其含義與式(1a2)的L12相同,較佳的範圍亦相同。 L 32 represents a single bond or a divalent linking group. The divalent linking group has the same meaning as L 12 of the formula (1a2), and the preferred range is also the same.

Y31表示所述利用陰離子進行配位的配位部位。當p表示2以上的整數時,多個Y31可相同,亦可不同。 Y 31 represents the coordination site in which the anion is coordinated. When p represents an integer of 2 or more, a plurality of Y 31 may be the same or different.

Y31a表示選自所述群組(AN-1)中的至少1種。當p表示2以上的整數時,多個Y31a可相同,亦可不同。 Y 31a represents at least one selected from the group (AN-1). When p represents an integer of 2 or more, the plurality of Y 31a may be the same or different.

式(1c1)及式(1c2)中,p表示1以上的整數,較佳為2以上。上限例如較佳為5以下,更佳為3以下。 In the formula (1c1) and the formula (1c2), p represents an integer of 1 or more, preferably 2 or more. The upper limit is, for example, preferably 5 or less, more preferably 3 or less.

銅化合物的較佳的形態例如為含有包含酸基離子部位的聚合體及銅離子的聚合物型的銅化合物,更佳為將聚合體中的酸基離子部位作為配位體的聚合物型的銅化合物。該聚合物型的銅化合物為含有包含酸基離子的聚合體(A2)及銅離子的銅化合物,較佳的形態為將聚合體(A2)中的酸基離子部位作為配位體的銅錯合物。 A preferred form of the copper compound is, for example, a polymer type copper compound containing a polymer containing an acid group ion site and copper ions, and more preferably a polymer type having a acid group ion site in the polymer as a ligand. Copper compound. The polymer type copper compound is a copper compound containing a polymer (A2) containing an acid group ion and a copper ion, and a preferred form is a copper error in which an acid group ion site in the polymer (A2) is used as a ligand. Compound.

圖1是表示含有包含酸基離子的聚合體(A2)及銅離子的化合物的一例的影像圖,1表示含有包含酸基離子的聚合體(A2)及銅離子的化合物,2表示銅離子,3表示聚合體(A2)的主鏈,4表示聚合體(A2)的側鏈,5表示源自酸基或其鹽的酸基離子部位5。於聚合物型的銅化合物中,酸基離子部位5鍵結(例如配位鍵結)於銅2上,並將銅2作為起點,於聚合體(A2)的側鏈4間形成交聯結構。推斷藉由設為此種構成,即便進行加熱,化合物1的結構亦不易受損,可獲得耐熱性優異的硬化膜。 1 is an image diagram showing an example of a compound containing a polymer (A2) containing an acid group ion and a copper ion, 1 is a compound containing a polymer (A2) containing an acid group ion and a copper ion, and 2 is a copper ion. 3 denotes a main chain of the polymer (A2), 4 denotes a side chain of the polymer (A2), and 5 denotes an acid group ion site 5 derived from an acid group or a salt thereof. In the polymer type copper compound, the acid-based ion site 5 is bonded (for example, coordinately bonded) to the copper 2, and the copper 2 is used as a starting point to form a crosslinked structure between the side chains 4 of the polymer (A2). . It is estimated that by adopting such a configuration, even if heating is performed, the structure of the compound 1 is not easily damaged, and a cured film excellent in heat resistance can be obtained.

<<<第1實施形態>>> <<<First Embodiment>>

包含配位部位的聚合體的較佳的一例為主鏈具有碳-碳鍵的結構,較佳為包含由下述式(A1-0)所表示的構成單元。 A preferred example of the polymer containing the coordination site has a structure in which the main chain has a carbon-carbon bond, and preferably contains a constituent unit represented by the following formula (A1-0).

[化16] [Chemistry 16]

式(A1-0)中,R1表示氫原子或烴基,L1表示單鍵或連結基,Y1表示具有選自針對銅成分利用陰離子進行配位的配位部位、及針對銅成分利用非共用電子對進行配位的配位原子中的1種以上的基。 In the formula (A1-0), R 1 represents a hydrogen atom or a hydrocarbon group, L 1 represents a single bond or a linking group, and Y 1 represents a coordination site selected from the group consisting of an anion for copper component and a non-copper component. One or more groups of the coordinating atoms coordinated by the shared electron pair.

式(A1-0)中,當R1表示烴基時,作為烴基,可列舉直鏈狀、分支狀或環狀的脂肪族烴基,或芳香族烴基。烴基可具有取代基,但較佳為未經取代。烴基的碳數較佳為1~10,更佳為1~5,進而更佳為1~3。烴基較佳為甲基。R1較佳為氫原子或甲基,更佳為氫原子。 In the formula (A1-0), when R 1 represents a hydrocarbon group, examples of the hydrocarbon group include a linear, branched or cyclic aliphatic hydrocarbon group or an aromatic hydrocarbon group. The hydrocarbon group may have a substituent, but is preferably unsubstituted. The carbon number of the hydrocarbon group is preferably from 1 to 10, more preferably from 1 to 5, and still more preferably from 1 to 3. The hydrocarbon group is preferably a methyl group. R 1 is preferably a hydrogen atom or a methyl group, more preferably a hydrogen atom.

式(A1-0)中,L1及Y1的含義與所述式(1)的L1及Y1相同,較佳的範圍亦相同。 In formula (A1-0), L 1 and the meaning of Y 1 and Y 1 L 1 and the same preferred ranges are also the same as the formula (1).

包含配位部位的聚合體更佳為包含由下述式(A1-1)所表示的構成單元。 More preferably, the polymer containing the coordination site contains a constituent unit represented by the following formula (A1-1).

[化17] [化17]

式(A1-1)中,R1表示氫原子或甲基,L1表示單鍵或二價的連結基,M1表示氫原子、或者構成磺酸基與鹽的原子或原子團。 In the formula (A1-1), R 1 represents a hydrogen atom or a methyl group, L 1 represents a single bond or a divalent linking group, and M 1 represents a hydrogen atom or an atom or a radical constituting a sulfonic acid group and a salt.

所述式(A1-1)中,R1的含義與所述式(A1-0)中的R1相同,較佳的範圍亦相同。 In the formula (A1-1), R 1 have the meaning as in the formula (A1-0) R 1 the same, the preferred ranges are also the same.

所述式(A1-1)中,L1的含義與所述式(A1-0)中的L1相同,較佳的範圍亦相同。 In the formula (A1-1), the meaning of L 1 is the same as L 1 in the formula (A1-0), and the preferred range is also the same.

所述式(A1-1)中,由M1所表示的構成磺酸基與鹽的原子或原子團的含義與所述構成酸基的鹽的原子或原子團相同,較佳為氫原子或鹼金屬原子。 In the formula (A1-1), the atom or atom group constituting the sulfonic acid group and the salt represented by M 1 has the same meaning as the atom or atom group of the salt constituting the acid group, and is preferably a hydrogen atom or an alkali metal. atom.

作為由式(A1-0)所表示的構成單元及由式(A1-1)所表示的構成單元以外的其他構成單元,可參考日本專利特開2010-106268號公報的段落號0068~段落號0075(相對應的美國專利申請公開第2011/0124824號說明書的[0112]~[0118])中所揭示的共聚成分的記載,該些的內容可被編入至本申請案說明書中。 As a constituent unit represented by the formula (A1-0) and other constituent units other than the constituent unit represented by the formula (A1-1), reference may be made to paragraph number 0068 to paragraph number of JP-A-2010-106268. The contents of the copolymerization components disclosed in [0112] to [0118] of the specification of the corresponding US Patent Application Publication No. 2011/0124824, the contents of which are incorporated herein by reference.

作為較佳的其他構成單元,可列舉由下述式(A1-2)所表示的構成單元。 As another preferable structural unit, the structural unit represented by the following formula (A1-2) is mentioned.

[化18] [化18]

式(A1-2)中,R3表示氫原子或甲基,較佳為氫原子。 In the formula (A1-2), R 3 represents a hydrogen atom or a methyl group, preferably a hydrogen atom.

Y2表示單鍵或上價的連結基,作為二價的連結基,其含義與所述所述式(A1)的二價的連結基相同。尤其,作為Y2,較佳為-COO-、-CO-、-NH-、直鏈狀或分支狀的伸烷基、或包含該些的組合的基,或者單鍵。 Y 2 represents a single bond or an upper linking group, and the divalent linking group has the same meaning as the divalent linking group of the above formula (A1). In particular, as Y 2 , a -COO-, -CO-, -NH-, a linear or branched alkyl group, or a group containing a combination of these or a single bond is preferred.

式(A1-2)中,X2表示-PO3H、-PO3H2、-OH或COOH,較佳為-COOH。 In the formula (A1-2), X 2 represents -PO 3 H, -PO 3 H 2 , -OH or COOH, preferably -COOH.

當所述聚合體(A1)包含其他構成單元(較佳為由所述式(A1-2)所表示的構成單元)時,由所述式(A1-1)所表示的構成單元與由所述式(A1-2)所表示的構成單元的莫耳比較佳為95:5~20:80,更佳為90:10~40:60。 When the polymer (A1) contains another constituent unit (preferably, a constituent unit represented by the formula (A1-2)), the constituent unit represented by the formula (A1-1) The moieties of the constituent units represented by the formula (A1-2) are preferably 95:5 to 20:80, more preferably 90:10 to 40:60.

<<<第2實施形態>>> <<<Second embodiment>>

於本發明中,亦可使用藉由具有配位部位、且主鏈上具有芳香族烴基及/或芳香族雜環基的聚合體(以下,稱為含有芳香族基的聚合體)與銅成分的反應所獲得的聚合物型的銅化合物。含有芳香族基的聚合體只要主鏈上具有芳香族烴基及芳香族雜環基中的至少1種即可,亦可具有2種以上。關於配位部位及銅成分, 其含義與所述藉由包含配位部位的聚合體與銅成分的反應所獲得的銅化合物相同,較佳的範圍亦相同。 In the present invention, a polymer having an aromatic hydrocarbon group and/or an aromatic heterocyclic group in the main chain (hereinafter referred to as an aromatic group-containing polymer) and a copper component may be used. The polymer type copper compound obtained by the reaction. The aromatic group-containing polymer may have at least one of an aromatic hydrocarbon group and an aromatic heterocyclic group in the main chain, and may have two or more kinds. Regarding the coordination site and copper composition, The meaning is the same as the copper compound obtained by the reaction of the polymer containing the coordination site with the copper component, and the preferred range is also the same.

作為芳香族烴基,例如較佳為芳基。芳基的碳數較佳為6~20,更佳為6~15,進而更佳為6~12。尤其,較佳為苯基、萘基或聯苯基。芳香族烴基可為單環或多環,但較佳為單環。 As the aromatic hydrocarbon group, for example, an aryl group is preferred. The carbon number of the aryl group is preferably from 6 to 20, more preferably from 6 to 15, more preferably from 6 to 12. In particular, a phenyl group, a naphthyl group or a biphenyl group is preferred. The aromatic hydrocarbon group may be monocyclic or polycyclic, but is preferably a single ring.

作為芳香族雜環基,例如可使用碳數為2~30的芳香族雜環基。芳香族雜環基較佳為5員環或6員環。另外,芳香族雜環基為單環或縮合環,可例示單環或縮合數為2~8的縮合環。作為雜環中所含有的雜原子,可例示氮、氧、硫原子,較佳為氮或氧。 As the aromatic heterocyclic group, for example, an aromatic heterocyclic group having 2 to 30 carbon atoms can be used. The aromatic heterocyclic group is preferably a 5-membered ring or a 6-membered ring. Further, the aromatic heterocyclic group is a monocyclic ring or a condensed ring, and examples thereof include a monocyclic ring or a condensed ring having a condensation number of 2 to 8. The hetero atom contained in the hetero ring may, for example, be nitrogen, oxygen or a sulfur atom, preferably nitrogen or oxygen.

當芳香族烴基及/或芳香族雜環基具有取代基T時,作為取代基T,例如可例示烷基、聚合性基(較佳為含有碳-碳雙鍵的聚合性基)、鹵素原子(氟原子、氯原子、溴原子、碘原子)、羧酸酯基、鹵化烷基、烷氧基、甲基丙烯醯氧基、丙烯醯氧基、醚基、磺醯基、硫醚基、醯胺基、醯基、羥基、羧酸基、芳烷基等,較佳為烷基(特別是碳數為1~3的烷基)。 When the aromatic hydrocarbon group and/or the aromatic heterocyclic group has a substituent T, the substituent T may, for example, be an alkyl group or a polymerizable group (preferably a polymerizable group containing a carbon-carbon double bond) or a halogen atom. (a fluorine atom, a chlorine atom, a bromine atom, an iodine atom), a carboxylate group, a halogenated alkyl group, an alkoxy group, a methacryloxy group, an acryloxy group, an ether group, a sulfonyl group, a thioether group, Amidino group, mercapto group, hydroxyl group, carboxylic acid group, aralkyl group or the like is preferably an alkyl group (particularly an alkyl group having 1 to 3 carbon atoms).

尤其,含有芳香族基的聚合體較佳為選自聚醚碸系聚合體、聚碸系聚合體、聚醚酮系聚合體、聚苯醚系聚合體、聚醯亞胺系聚合體、聚苯并咪唑系聚合體、聚伸苯基系聚合體、酚樹脂系聚合體、聚碳酸酯系聚合體、聚醯胺系聚合體及聚酯系聚合體中的至少1種聚合體。以下表示各聚合體的例子。 In particular, the aromatic group-containing polymer is preferably selected from the group consisting of a polyether oxime polymer, a polyfluorene polymer, a polyether ketone polymer, a polyphenylene ether polymer, a polyimide polymer, and a polymer. At least one polymer of a benzimidazole-based polymer, a polyphenylene-based polymer, a phenol resin-based polymer, a polycarbonate-based polymer, a polyamine-based polymer, and a polyester-based polymer. Examples of the respective polymers are shown below.

聚醚碸系聚合體:具有由(-O-Ph-SO2-Ph-)所表示的主鏈結構(Ph表示伸苯基,以下相同)的聚合體 Polyether oxime polymer: a polymer having a main chain structure represented by (-O-Ph-SO 2 -Ph-) (Ph represents a phenyl group, the same applies hereinafter)

聚碸系聚合體:具有由(-O-Ph-Ph-O-Ph-SO2-Ph-)所表示的主鏈結構的聚合體 Polyfluorene polymer: a polymer having a main chain structure represented by (-O-Ph-Ph-O-Ph-SO 2 -Ph-)

聚醚酮系聚合體:具有由(-O-Ph-O-Ph-C(=O)-Ph-)所表示的主鏈結構的聚合體 Polyether ketone polymer: a polymer having a main chain structure represented by (-O-Ph-O-Ph-C(=O)-Ph-)

聚苯醚系聚合體:具有由(-Ph-O-、-Ph-S-)所表示的主鏈結構的聚合體 Polyphenylene ether polymer: a polymer having a main chain structure represented by (-Ph-O-, -Ph-S-)

聚伸苯基系聚合體:具有由(-Ph-)所表示的主鏈結構的聚合體 Polyphenylene polymer: a polymer having a main chain structure represented by (-Ph-)

酚樹脂系聚合體:具有由(-Ph(OH)-CH2-)所表示的主鏈結構的聚合體 Phenolic resin-based polymer: a polymer having a main chain structure represented by (-Ph(OH)-CH 2 -)

聚碳酸酯系聚合體:具有由(-Ph-O-C(=O)-O-)所表示的主鏈結構的聚合體 Polycarbonate-based polymer: a polymer having a main chain structure represented by (-Ph-O-C(=O)-O-)

作為聚醯胺系聚合體,例如具有由(-Ph-C(=O)-NH-)所表示的主鏈結構的聚合體 As the polyamine-based polymer, for example, a polymer having a main chain structure represented by (-Ph-C(=O)-NH-)

作為聚酯系聚合體,例如具有由(-Ph-C(=O)O-)所表示的主鏈結構的聚合體 As the polyester-based polymer, for example, a polymer having a main chain structure represented by (-Ph-C(=O)O-)

作為聚醚碸系聚合體、聚碸系聚合體及聚醚酮系聚合體,例如可參考日本專利特開2006-310068號公報的段落0022及日本專利特開2008-27890號公報的段落0028中所記載的主鏈結構,該些的內容可被編入至本申請案說明書中。 For example, in the polyether oxime polymer, the polyfluorene polymer, and the polyether ketone polymer, for example, paragraphs 0022 of JP-A-2006-310068 and paragraph 0028 of JP-A-2008-27890 can be referred to. The contents of the main chain structure described can be incorporated into the specification of the present application.

作為聚醯亞胺系聚合體,可參考日本專利特開2002-367627號公報的段落0047~段落0058的記載及日本專利特開 2004-35891號公報的0018~0019中所記載的主鏈結構,該些的內容可被編入至本申請案說明書中。 As the polyimine-based polymer, the description of paragraphs 0047 to 0058 of Japanese Patent Laid-Open Publication No. 2002-367627 and Japanese Patent Laid-Open The main chain structure described in 0018 to 0019 of the Japanese Patent Publication No. 2004-35891 can be incorporated into the specification of the present application.

含有芳香族基的聚合體的較佳的一例較佳為包含由下述式(A1-3)所表示的構成單元。 A preferred example of the aromatic group-containing polymer preferably contains a constituent unit represented by the following formula (A1-3).

(式(A1-3)中,Ar1表示芳香族烴基及/或芳香族雜環基,Y1表示單鍵或二價的連結基,X1表示具有選自針對銅成分利用陰離子進行配位的配位部位、及針對銅成分利用非共用電子對進行配位的配位原子中的1種以上的基) (In the formula (A1-3), Ar 1 represents an aromatic hydrocarbon group and/or an aromatic heterocyclic group, Y 1 represents a single bond or a divalent linking group, and X 1 represents a ligand selected from an anion selected from a copper component. The coordination site and one or more of the coordination atoms that are coordinated to the copper component by the unshared electron pair)

式(A1-3)中,當Ar1表示芳香族烴基時,其含義與所述芳香族烴基相同,較佳的範圍亦相同。當Ar1表示芳香族雜環基時,其含義與所述芳香族雜環基相同,較佳的範圍亦相同。 In the formula (A1-3), when Ar 1 represents an aromatic hydrocarbon group, the meaning thereof is the same as that of the aromatic hydrocarbon group, and the preferred range is also the same. When Ar 1 represents an aromatic heterocyclic group, the meaning is the same as that of the aromatic heterocyclic group, and the preferred range is also the same.

Ar1除所述式(A1-3)中的-Y1-X1以外,亦可具有取代基。當Ar1具有取代基時,取代基的含義與所述取代基T相同,較佳的範圍亦相同。 Ar 1, except in the formula (A1-3) -Y 1 -X 1, may have a substituent. When Ar 1 has a substituent, the meaning of the substituent is the same as that of the substituent T, and the preferred range is also the same.

式(A1-3)中,Y1較佳為單鍵。當Y1表示二價的連結基時,作為二價的連結基,例如可列舉:烴基、芳香族雜環基、 -O-、-S-、-SO2-、-CO-、-C(=O)O-、-O-C(=O)-、-SO2-、-NX-(X表示氫原子或烷基、較佳為氫原子)、-C(RY1)(RY2)-、或包含該些的組合的基。此處,RY1及RY2分別獨立地表示氫原子、氟原子或烷基。 In the formula (A1-3), Y 1 is preferably a single bond. When Y 1 represents a divalent linking group, examples of the divalent linking group include a hydrocarbon group, an aromatic heterocyclic group, -O-, -S-, -SO 2 -, -CO-, -C ( =O)O-, -OC(=O)-, -SO 2 -, -NX- (X represents a hydrogen atom or an alkyl group, preferably a hydrogen atom), -C(R Y1 )(R Y2 )-, Or a group containing the combination of these. Here, R Y1 and R Y2 each independently represent a hydrogen atom, a fluorine atom or an alkyl group.

作為烴基,例如可列舉:直鏈狀、分支狀或環狀的伸烷基,或伸芳基。直鏈狀的伸烷基的碳數較佳為1~20,更佳為1~10,進而更佳為1~6。分支狀的伸烷基的碳數較佳為3~20,更佳為3~10,進而更佳為3~6。環狀的伸烷基可為單環、多環的任一種。環狀的伸烷基的碳數較佳為3~20,更佳為4~10,進而更佳為6~10。該些直鏈狀、分支狀或環狀的伸烷基可利用氟原子來取代伸烷基中的氫原子。 Examples of the hydrocarbon group include a linear, branched or cyclic alkylene group or an extended aryl group. The carbon number of the linear alkyl group is preferably from 1 to 20, more preferably from 1 to 10, still more preferably from 1 to 6. The carbon number of the branched alkyl group is preferably from 3 to 20, more preferably from 3 to 10, and still more preferably from 3 to 6. The cyclic alkyl group may be either a single ring or a polycyclic ring. The carbon number of the cyclic alkyl group is preferably from 3 to 20, more preferably from 4 to 10, and still more preferably from 6 to 10. The linear, branched or cyclic alkylene groups may use a fluorine atom to replace a hydrogen atom in the alkyl group.

伸芳基的含義與所述式(A1-1)的二價的連結基為伸芳基的情況相同。 The meaning of the extended aryl group is the same as the case where the divalent linking group of the formula (A1-1) is an exoaryl group.

作為芳香族雜環基,並無特別限定,但較佳為5員環或6員環。另外,芳香族雜環基可為單環,亦可為縮合環,較佳為單環或縮合數為2~8的縮合環,更佳為單環或縮合數為2~4的縮合環。 The aromatic heterocyclic group is not particularly limited, but is preferably a 5-membered ring or a 6-membered ring. Further, the aromatic heterocyclic group may be a monocyclic ring or a condensed ring, and is preferably a monocyclic ring or a condensed ring having a condensation number of 2 to 8, more preferably a monocyclic ring or a condensed ring having a condensation number of 2 to 4.

式(A1-3)中,X1的含義與所述式(1)的Y1相同,較佳為酸基或其鹽。 In the formula (A1-3), X 1 has the same meaning as Y 1 of the above formula (1), and is preferably an acid group or a salt thereof.

所述聚合體(A1-0)~聚合體(A1-3)的重量平均分子量較佳為1000以上,更佳為1000~1000萬,進而更佳為3000~100萬,特佳為4000~400,000。 The weight average molecular weight of the polymer (A1-0) to the polymer (A1-3) is preferably 1,000 or more, more preferably 1,000 to 10,000,000, still more preferably 3,000 to 1,000,000, and particularly preferably 4,000 to 400,000. .

作為所述聚合體(A1-0)~聚合體(A1-3)的具體例,可列舉下述表中所記載的化合物及下述化合物的鹽,但並不限定於該些具體例。 Specific examples of the polymer (A1-0) to the polymer (A1-3) include the compounds described in the following tables and the salts of the following compounds, but are not limited to these specific examples.

[化20] [Chemistry 20]

[化21] [Chem. 21]

[化23] [化23]

[化26] [Chem. 26]

含有銅化合物的組成物亦可含有銅化合物以外的其他成分。作為銅化合物以外的其他成分,可列舉溶劑、界面活性劑等。 The composition containing a copper compound may also contain other components than the copper compound. Examples of other components other than the copper compound include a solvent and a surfactant.

含有銅化合物的組成物較佳為實質上不含硬化性化合物。尤其,相對於含有銅化合物的組成物的總固體成分,含有銅化合物的組成物中所含有的硬化性化合物的含量較佳為5質量%以下,更佳為2質量%以下,進而更佳為1質量%以下。 The composition containing a copper compound preferably contains substantially no curable compound. In particular, the content of the curable compound contained in the composition containing the copper compound is preferably 5% by mass or less, more preferably 2% by mass or less, and even more preferably more, based on the total solid content of the composition containing the copper compound. 1% by mass or less.

溶劑 Solvent

溶劑並無特別限制,只要是可使本發明中所使用的組成物的各成分均勻地溶解或分散者,則可根據目的而適宜選擇,例如可 適宜地列舉水、醇類(例如乙醇)等的水系溶劑。另外,除所述以外,本發明中所使用的溶劑可適宜地列舉:有機溶劑、酮類、醚類、酯類、芳香族烴類、鹵化烴類、及二甲基甲醯胺、二甲基乙醯胺、二甲基亞碸、環丁碸等。該些溶劑可單獨使用1種,亦可併用2種以上。 The solvent is not particularly limited as long as the components of the composition used in the present invention are uniformly dissolved or dispersed, and may be appropriately selected depending on the purpose, for example, An aqueous solvent such as water or an alcohol (for example, ethanol) is suitably used. Further, in addition to the above, the solvent used in the present invention may suitably be exemplified by an organic solvent, a ketone, an ether, an ester, an aromatic hydrocarbon, a halogenated hydrocarbon, and dimethylformamide or dimethyl. Ethyl amide, dimethyl hydrazine, cyclobutyl hydrazine, and the like. These solvents may be used alone or in combination of two or more.

作為醇類、芳香族烴類、鹵化烴類的具體例,可列舉日本專利特開2012-194534號公報段落0136等中所記載者,其內容可被編入至本申請案說明書中。另外,作為酯類、酮類、醚類的具體例,可列舉日本專利特開2012-208494號公報段落0497(相對應的美國專利申請公開第2012/0235099號說明書的[0609])中所記載者,進而可列舉:乙酸-正戊酯、乳酸乙酯、丙酸乙酯、鄰苯二甲酸二甲酯、苯甲酸乙酯、硫酸甲酯、丙酮、甲基異丁基酮、二乙醚、乙二醇單丁醚乙酸酯、環己酮、環戊酮、丙二醇單甲醚、丙二醇甲醚乙酸酯等。 Specific examples of the alcohol, the aromatic hydrocarbon, and the halogenated hydrocarbon include those described in paragraph 0136 of JP-A-2012-194534, and the contents thereof can be incorporated into the specification of the present application. In addition, specific examples of the esters, the ketones, and the ethers are described in paragraph 0497 of the Japanese Patent Application Laid-Open No. 2012-208494 (the corresponding Japanese Patent Application Publication No. 2012/0235099 [0609]). Further, acetic acid-n-amyl ester, ethyl lactate, ethyl propionate, dimethyl phthalate, ethyl benzoate, methyl sulfate, acetone, methyl isobutyl ketone, diethyl ether, Ethylene glycol monobutyl ether acetate, cyclohexanone, cyclopentanone, propylene glycol monomethyl ether, propylene glycol methyl ether acetate, and the like.

含有銅化合物的組成物特佳為含有水。相對於含有銅化合物的組成物,較佳為含有40質量%~95質量%的水,更佳為含有50質量%~85質量%的水。 The composition containing a copper compound particularly preferably contains water. The composition containing the copper compound preferably contains 40% by mass to 95% by mass of water, more preferably 50% by mass to 85% by mass of water.

當含有銅化合物的組成物含有水以外的溶劑時,相對於含有銅化合物的組成物,較佳為以1質量%~50質量%的比例含有水以外的溶劑,更佳為以5質量%~30質量%的比例含有水以外的溶劑。水以外的溶劑可僅為1種,亦可為2種以上。 When the composition containing a copper compound contains a solvent other than water, it is preferable to contain a solvent other than water in a ratio of 1% by mass to 50% by mass, more preferably 5% by mass, based on the composition containing the copper compound. The proportion of 30% by mass contains a solvent other than water. The solvent other than water may be used alone or in combination of two or more.

於含有銅化合物的組成物中,只要無損本發明的效果, 則可根據目的而適宜選擇使用其他成分。 In the composition containing a copper compound, as long as the effects of the present invention are not impaired, Other ingredients may be selected as appropriate depending on the purpose.

作為可併用的其他成分,例如可列舉黏合劑聚合物、分散劑、增感劑、交聯劑、硬化促進劑、填料、熱硬化促進劑、熱聚合抑制劑、塑化劑等,進而亦可併用針對基材表面的密接促進劑及其他助劑類(例如導電性粒子、填充劑、消泡劑、阻燃劑、調平劑、剝離促進劑、抗氧化劑、香料、表面張力調整劑、鏈轉移劑等)。 Examples of other components that can be used together include a binder polymer, a dispersant, a sensitizer, a crosslinking agent, a curing accelerator, a filler, a thermosetting accelerator, a thermal polymerization inhibitor, a plasticizer, and the like. And use adhesion promoters and other additives for the surface of the substrate (such as conductive particles, fillers, defoamers, flame retardants, leveling agents, peeling accelerators, antioxidants, perfumes, surface tension modifiers, chains) Transfer agent, etc.).

藉由適宜含有該些成分,而可調整作為目標的近紅外線吸收濾光片的穩定性、膜物性等性質。 By suitably containing these components, properties such as stability and film physical properties of the target near-infrared absorption filter can be adjusted.

該些成分例如可參考日本專利特開2012-003225號公報的段落號0183以後(相對應的美國專利申請公開第2013/0034812號說明書的[0237]以後)的記載,日本專利特開2008-250074號公報的段落號0101~段落號0102、段落號0103~段落號0104及段落號0107~段落號0109等的記載,該些的內容可被編入至本申請案說明書中。 For example, Japanese Patent Application Laid-Open No. Hei. No. 2012-003225, the entire disclosure of which is incorporated herein by reference. The contents of paragraph number 0101 to paragraph number 0102, paragraph number 0103 to paragraph number 0104, and paragraph number 0107 to paragraph number 0109 of the Japanese Patent Publication are incorporated herein by reference.

界面活性劑 Surfactant

含有銅化合物的組成物可進而含有界面活性劑。界面活性劑可僅使用1種,亦可組合2種以上。相對於本發明中所使用的組成物的固體成分,界面活性劑的添加量可設為0.0001質量%~2質量%,亦可設為0.005質量%~1.0質量%,亦可設為0.01質量%~0.1質量%。 The composition containing a copper compound may further contain a surfactant. The surfactant may be used alone or in combination of two or more. The amount of the surfactant to be added to the solid content of the composition used in the present invention may be 0.0001% by mass to 2% by mass, may be 0.005% by mass to 1.0% by mass, or may be 0.01% by mass. ~0.1% by mass.

作為界面活性劑,可使用:氟系界面活性劑、非離子系界面活性劑、陽離子系界面活性劑、陰離子系界面活性劑、矽酮系界 面活性劑等各種界面活性劑。 As the surfactant, a fluorine-based surfactant, a nonionic surfactant, a cationic surfactant, an anionic surfactant, an anthrone-based system can be used. Various surfactants such as surfactants.

尤其,藉由含有銅化合物的組成物含有氟系界面活性劑、及矽酮系界面活性劑的至少任一者,作為塗佈液來製備時的液體特性(特別是流動性)進一步提昇,因此可進一步改善塗佈厚度的均勻性或省液性。 In particular, the composition containing a copper compound contains at least one of a fluorine-based surfactant and an anthrone-based surfactant, and the liquid property (particularly fluidity) at the time of preparation as a coating liquid is further improved. The uniformity of the coating thickness or the liquid-saving property can be further improved.

即,當使用應用了含有氟系界面活性劑、及矽酮系界面活性劑的至少任一者的組成物的塗佈液來形成膜時,使被塗佈面與塗佈液的界面張力下降,藉此對於被塗佈面的潤濕性得到改善,且對於被塗佈面的塗佈性提昇。因此,即便於以少量的液量形成幾μm左右的薄膜的情況下,就可更適宜地進行厚度不均小的厚度均勻的膜形成的觀點而言亦有效。 In other words, when a film is formed using a coating liquid containing a composition containing at least one of a fluorine-based surfactant and an anthrone-based surfactant, the interfacial tension between the coated surface and the coating liquid is lowered. Thereby, the wettability to the coated surface is improved, and the coatability to the coated surface is improved. Therefore, even when a film having a thickness of about several μm is formed with a small amount of liquid, it is effective to form a film having a uniform thickness with a small thickness unevenness.

氟系界面活性劑中的氟含有率例如可設為3質量%~40質量%。 The fluorine content rate in the fluorine-based surfactant can be, for example, 3% by mass to 40% by mass.

作為氟系界面活性劑,例如可列舉:美佳法(Megafac)F171、Megafac F172、Megafac F173、Megafac F176、Megafac F177、Megafac F141、Megafac F142、Megafac F143、Megafac F144、Megafac R30、Megafac F437、Megafac F479、Megafac F482、Megafac F554、Megafac F780、Megafac R08(以上,迪愛生(DIC)(股份)製造),弗洛德(Fluorad)FC430、Fluorad FC431、Fluorad FC171(以上,住友3M(Sumitomo 3M)(股份)製造),沙福隆(Surflon)S-382、Surflon S-141、Surflon S-145、Surflon SC-101、Surflon SC-103、Surflon SC-104、Surflon SC-105、Surflon SC1068、Surflon SC-381、Surflon SC-383、Surflon S393、Surflon KH-40(以上,旭硝子(股份)製造),艾福拓(Eftop)EF301、Eftop EF303、Eftop EF351、Eftop EF352(以上,三菱材料電子化成(Jemco)(股份)製造),PF636、PF656、PF6320、PF6520、PF7002(歐諾法(OMNOVA)公司製造)等。 Examples of the fluorine-based surfactant include Megafac F171, Megafac F172, Megafac F173, Megafac F176, Megafac F177, Megafac F141, Megafac F142, Megafac F143, Megafac F144, Megafac R30, Megafac F437, and Megafac F479. , Megafac F482, Megafac F554, Megafac F780, Megafac R08 (above, Di Ansheng (DIC) (share) manufacturing), Fluorad FC430, Fluorad FC431, Fluorad FC171 (above, Sumitomo 3M (Sumitomo 3M) (shares ))), Surflon S-382, Surflon S-141, Surflon S-145, Surflon SC-101, Surflon SC-103, Surflon SC-104, Surflon SC-105, Surflon SC1068, Surflon SC-381, Surflon SC-383, Surflon S393, Surflon KH-40 (above, manufactured by Asahi Glass Co., Ltd.), Eftop EF301, Eftop EF303, Eftop EF351, Eftop EF352 (above, Mitsubishi Materials Electronics ( Jemco), PF636, PF656, PF6320, PF6520, PF7002 (manufactured by OMNOVA).

作為氟系界面活性劑,可使用具有氟脂肪族基的聚合體。作為具有氟脂肪族基的聚合體,可例示具有氟脂肪族基,且氟脂肪族基自藉由短鏈聚合法(亦稱為短鏈聚合物法)、或寡聚合法(亦稱為寡聚物法)所製造的氟脂肪族化合物獲得的氟系界面活性劑。 As the fluorine-based surfactant, a polymer having a fluoroaliphatic group can be used. The polymer having a fluoroaliphatic group may be exemplified to have a fluoroaliphatic group, and the fluoroaliphatic group is derived from a short-chain polymerization method (also referred to as a short-chain polymer method) or an oligomerization method (also referred to as an oligo group). A fluorine-based surfactant obtained by a fluoroaliphatic compound produced by a polymer method.

此處,所謂「短鏈聚合法」,是指使低分子量的物質進行聚合而於分子內具有1個~2個活性基的化合物的合成方法。另外,所謂「寡聚合法」,是指將單量體或單量體類的混合物轉化成寡聚物的方法。 Here, the "short-chain polymerization method" refers to a method of synthesizing a compound having a low molecular weight substance and having one to two active groups in a molecule. In addition, the "oligomerization method" refers to a method of converting a mixture of a single amount or a single amount into an oligomer.

本發明中的氟脂肪族化合物可藉由日本專利特開2002-90991號公報中所記載的方法來合成。 The fluoroaliphatic compound in the present invention can be synthesized by the method described in JP-A-2002-90991.

作為本發明中的具有氟脂肪族基的聚合體,可使用本發明中的具有氟脂肪族基的單體與(聚(氧基伸烷基))丙烯酸酯及/或(聚(氧基伸烷基))甲基丙烯酸酯的共聚物。共聚物可為不規則地分佈者,亦可進行嵌段共聚。另外,作為所述聚(氧基伸烷基)基,可列舉聚(氧基伸乙基)基、聚(氧基伸丙基)基、聚(氧基伸丁基)基等,亦可為如聚(氧基伸乙基與氧基伸丙基及氧基伸乙基的嵌段連結 體)基、或聚(氧基伸乙基與氧基伸丙基的嵌段連結體)基等在相同的鏈長內具有鏈長不同的伸烷基般的單元。進而,具有氟脂肪族基的單體與(聚(氧基伸烷基))丙烯酸酯(或甲基丙烯酸酯)的共聚物不僅可為二元共聚物,亦可為使不同的2種以上的具有氟脂肪族基的單體、與不同的2種以上的(聚(氧基伸烷基))丙烯酸酯(或甲基丙烯酸酯)等同時進行共聚而成的三元系以上的共聚物。 As the fluoroaliphatic group-containing polymer in the present invention, the fluoroaliphatic group-containing monomer of the present invention and (poly(oxyalkylene)) acrylate and/or (poly(oxyalkylene) group can be used. )) Copolymer of methacrylate. The copolymer may be irregularly distributed or may be subjected to block copolymerization. Further, examples of the poly(oxyalkylene) group include a poly(oxyethylidene) group, a poly(oxypropyl) group, a poly(oxybutylene) group, and the like, and may also be, for example, poly(( Block linkage of oxy-ethyl and oxy-propyl and oxy-ethyl The group or the poly(oxyalkylene group and the oxypropyl group) group have the same chain length as the alkyl group-like unit in the same chain length. Further, the copolymer of a fluoroaliphatic group-containing monomer and (poly(oxyalkylene)) acrylate (or methacrylate) may be not only a binary copolymer but also two or more different types. A ternary or higher copolymer having a fluoroaliphatic group and a copolymer of two or more kinds of (poly(oxyalkylene)) acrylate (or methacrylate).

作為包含本發明中的具有氟脂肪族基的聚合體的市售的界面活性劑,例如可列舉日本專利特開2012-208494號公報段落0552(相對應的美國專利申請公開第2012/0235099號說明書的[0678])等中所記載的界面活性劑,該些的內容可被編入至本申請案說明書中。另外,可使用:Megafac F-781(大日本油墨化學工業(股份)製造)、具有C6F13基的丙烯酸酯(或甲基丙烯酸酯)與(聚(氧基伸乙基))丙烯酸酯(或甲基丙烯酸酯)及(聚(氧基伸丙基))丙烯酸酯(或甲基丙烯酸酯)的共聚物、具有C8F17基的丙烯酸酯(或甲基丙烯酸酯)與(聚(氧基伸烷基))丙烯酸酯(或甲基丙烯酸酯)的共聚物、具有C8F17基的丙烯酸酯(或甲基丙烯酸酯)與(聚(氧基伸乙基))丙烯酸酯(或甲基丙烯酸酯)及(聚(氧基伸丙基))丙烯酸酯(或甲基丙烯酸酯)的共聚物等。 As a commercially available surfactant containing a fluoroaliphatic group-containing polymer in the present invention, for example, JP-A-2012-208494, paragraph 0552 (Japanese Patent Application Laid-Open No. 2012/0235099) The surfactants described in [0678] and the like can be incorporated into the specification of the present application. In addition, Megafac F-781 (manufactured by Dainippon Ink Chemical Industry Co., Ltd.), acrylate (or methacrylate) having a C 6 F 13 group and (poly(oxyethylidene)) acrylate ( Or a copolymer of (methacrylate) and (poly(oxypropyl)) acrylate (or methacrylate), an acrylate (or methacrylate) having a C 8 F 17 group and (poly(oxygen) a copolymer of acrylate (or methacrylate), an acrylate (or methacrylate) having a C 8 F 17 group and (poly(oxyethylidene)) acrylate (or methyl) Acrylate) and a copolymer of (poly(oxypropyl)) acrylate (or methacrylate).

作為非離子系界面活性劑,可列舉:聚氧乙烯烷基醚、聚氧乙烯烷基烯丙醚、聚氧乙烯脂肪酸酯、脫水山梨糖醇脂肪酸酯、聚氧乙烯脫水山梨糖醇脂肪酸酯、聚氧乙烯烷基胺、甘油脂肪酸酯、氧乙烯氧丙烯嵌段共聚物、乙炔二醇系界面活性劑、乙 炔系聚氧乙烯氧化物等。該些可單獨使用或使用2種以上。 Examples of the nonionic surfactant include polyoxyethylene alkyl ether, polyoxyethylene alkyl allyl ether, polyoxyethylene fatty acid ester, sorbitan fatty acid ester, and polyoxyethylene sorbitan fat. Acid ester, polyoxyethylene alkylamine, glycerin fatty acid ester, oxyethylene oxypropylene block copolymer, acetylene glycol surfactant, B An alkyne polyoxyethylene oxide or the like. These may be used alone or in combination of two or more.

作為具體的商品名,可列舉:薩非諾爾(Surfynol)61、82、104、104E、104H、104A、104BC、104DPM、104PA、104PG-50、104S、420、440、465、485、504、CT-111、CT-121、CT-131、CT-136、CT-141、CT-151、CT-171、CT-324、DF-37、DF-58、DF-75、DF-110D、DF-210、GA、OP-340、PSA-204、PSA-216、PSA-336、SE、SE-F、TG、GA、戴瑙魯(Dynol)604(以上,日信化學(股份)及空氣化工產品(Air Products & Chemicals)公司),奧路菲(Olfine)A、B、AK-02、CT-151W、E1004、E1010、P、SPC、STG、Y、32W、PD-001、PD-002W、PD-003、PD-004、EXP.4001、EXP.4036、EXP.4051、AF-103、AF-104、SK-14、AE-3(以上,日信化學(股份)),阿塞太瑙魯(Acetylenol)E00、E13T、E40、E60、E81、E100、E200(以上均為商品名,川研精化(Kawaken Fine Chemicals)(股份)公司製造)等。其中,合適的是Olfine E1010。 Specific product names include: Surfynol 61, 82, 104, 104E, 104H, 104A, 104BC, 104DPM, 104PA, 104PG-50, 104S, 420, 440, 465, 485, 504, CT. -111, CT-121, CT-131, CT-136, CT-141, CT-151, CT-171, CT-324, DF-37, DF-58, DF-75, DF-110D, DF-210 , GA, OP-340, PSA-204, PSA-216, PSA-336, SE, SE-F, TG, GA, Dynol 604 (above, Nisshin Chemical (share) and air chemical products ( Air Products & Chemicals), Olfine A, B, AK-02, CT-151W, E1004, E1010, P, SPC, STG, Y, 32W, PD-001, PD-002W, PD- 003, PD-004, EXP.4001, EXP.4036, EXP.4051, AF-103, AF-104, SK-14, AE-3 (above, Nisshin Chemical (share)), Azerbaijani ( Acetylenol) E00, E13T, E40, E60, E81, E100, and E200 (all of which are trade names, manufactured by Kawaken Fine Chemicals Co., Ltd.). Among them, Olfine E1010 is suitable.

此外,作為非離子系界面活性劑,具體而言,可列舉日本專利特開2012-208494號公報段落0553(相對應的美國專利申請公開第2012/0235099號說明書的[0679])等中所記載的非離子系界面活性劑,該些的內容可被編入至本申請案說明書中。 Further, as the non-ionic surfactant, specifically, it is described in paragraph 0553 of the Japanese Patent Application Laid-Open No. 2012-208494 (the [0679] of the corresponding US Patent Application Publication No. 2012/0235099). Nonionic surfactants, the contents of which can be incorporated into the specification of the present application.

作為陽離子系界面活性劑,具體而言,可列舉日本專利特開2012-208494號公報段落0554(相對應的美國專利申請公開第2012/0235099號說明書的[0680])中所記載的陽離子系界面活性劑,該些的內容可被編入至本申請案說明書中。 The cation-based interface described in JP-A-2012-208494, paragraph 0554 (corresponding to US Patent Application Publication No. 2012/0235099 [0680]), the cation-based interface is exemplified. Active agents, the contents of which can be incorporated into the specification of the present application.

作為陰離子系界面活性劑,具體而言,可列舉W004、W005、W017(裕商(股份)公司製造)等。 Specific examples of the anionic surfactant include W004, W005, and W017 (manufactured by Yusho Co., Ltd.).

作為矽酮系界面活性劑,例如可列舉日本專利特開2012-208494號公報段落0556(相對應的美國專利申請公開第2012/0235099號說明書的[0682])等中所記載的矽酮系界面活性劑,該些的內容可被編入至本申請案說明書中。另外,亦可例示:東麗.道康寧(股份)製造的「東麗矽酮(Toray Silicone)SF8410」、「Toray Silicone SF8427」、「Toray Silicone SH8400」、「ST80PA」、「ST83PA」、「ST86PA」,邁圖高新材料(Momentive Performance Materials)公司製造的「TSF-400」、「TSF-401」、「TSF-410」、「TSF-4446」,信越矽利光(Shinetsu silicone)股份有限公司製造的「KP321」、「KP323」、「KP324」、「KP340」等。 Examples of the fluorenone-based surfactants include an anthrone-based interface described in JP-A-2012-208494, paragraph 0556 (corresponding to U.S. Patent Application Publication No. 2012/0235099, No. [0682]). Active agents, the contents of which can be incorporated into the specification of the present application. In addition, it can also be illustrated: Toray. "Toray Silicone SF8410", "Toray Silicone SF8427", "Toray Silicone SH8400", "ST80PA", "ST83PA", "ST86PA" manufactured by Dow Corning (shares), Momentive Performance Materials "TSF-400", "TSF-401", "TSF-410", "TSF-4446" manufactured by the company, "KP321", "KP323", "KP324" manufactured by Shintosu Silicon Co., Ltd. ", "KP340" and so on.

聚合起始劑 Polymerization initiator

含有銅化合物的組成物可含有聚合起始劑。聚合起始劑可僅為1種,亦可為2種以上,於為2種以上的情況下,合計量變成所述範圍。例如,相對於含有銅化合物的組成物的固體成分,聚合起始劑的含量較佳為0.01質量%~30質量%,更佳為0.1質量%~20質量%,進而更佳為0.1質量%~15質量%。 The composition containing a copper compound may contain a polymerization initiator. The polymerization initiator may be one type or two or more types. When two or more types are used, the total amount is in the above range. For example, the content of the polymerization initiator is preferably 0.01% by mass to 30% by mass, more preferably 0.1% by mass to 20% by mass, even more preferably 0.1% by mass, based on the solid content of the composition containing the copper compound. 15% by mass.

作為聚合起始劑,只要具有藉由光、熱的任一者或所述兩者來使聚合性化合物的聚合開始的能力,則並無特別限制,可根據目的而適宜選擇,但較佳為光聚合性化合物。當藉由光來使聚合開始時,較佳為對於自紫外線區域至可見光線具有感光性者。 The polymerization initiator is not particularly limited as long as it has the ability to initiate polymerization of a polymerizable compound by either light or heat, and may be appropriately selected according to the purpose, but is preferably selected. Photopolymerizable compound. When the polymerization is started by light, it is preferably one which is photosensitive from the ultraviolet region to the visible light.

另外,當藉由熱來使聚合開始時,較佳為於150℃~250℃下分解的聚合起始劑。 Further, when the polymerization is started by heat, a polymerization initiator which decomposes at 150 ° C to 250 ° C is preferable.

作為可用於本發明的聚合起始劑,較佳為至少具有芳香族基的化合物,例如可列舉:醯基膦化合物,苯乙酮系化合物,α-胺基酮化合物,二苯甲酮系化合物,安息香醚系化合物,縮酮衍生物化合物,硫雜蒽酮化合物,肟化合物,六芳基聯咪唑化合物,三鹵代甲基化合物,偶氮化合物,有機過氧化物,重氮鎓化合物、錪化合物、鋶化合物、吖嗪鎓化合物、茂金屬化合物等鎓鹽化合物,有機硼鹽化合物,二碸化合物等。 The polymerization initiator which can be used in the present invention is preferably a compound having at least an aromatic group, and examples thereof include a mercaptophosphine compound, an acetophenone compound, an α-aminoketone compound, and a benzophenone compound. , benzoin ether compound, ketal derivative compound, thioxanthone compound, hydrazine compound, hexaarylbiimidazole compound, trihalomethyl compound, azo compound, organic peroxide, diazonium compound, hydrazine a compound, an anthraquinone compound, an oxazine compound, an onium salt compound such as a metallocene compound, an organic boron salt compound, a diterpene compound or the like.

就感度的觀點而言,較佳為肟化合物、苯乙酮系化合物、α-胺基酮化合物、三鹵代甲基化合物、六芳基聯咪唑化合物、及硫醇化合物。 From the viewpoint of sensitivity, an anthracene compound, an acetophenone-based compound, an α-aminoketone compound, a trihalogenated methyl compound, a hexaarylbiimidazole compound, and a thiol compound are preferable.

作為苯乙酮系化合物、三鹵代甲基化合物、六芳基聯咪唑化合物、肟化合物,具體而言,可參考日本專利特開2012-208494號公報段落0506~段落0510(相對應的美國專利申請公開第2012/0235099號說明書的[0622~0628])等的記載,該些的內容可被編入至本申請案說明書中。 As an acetophenone-based compound, a trihalogenated methyl compound, a hexaarylbiimidazole compound, and an anthracene compound, for example, reference is made to Japanese Patent Laid-Open Publication No. 2012-208494, paragraph 0506 to paragraph 0510 (corresponding US patent) The contents of [0622 to 0628] and the like of the specification of the publication No. 2012/0235099, the contents of which are incorporated herein by reference.

作為光聚合起始劑,更佳為選自由肟化合物、苯乙酮系化合物、及醯基膦化合物所組成的群組中的化合物。更具體而言,例如亦可使用日本專利特開平10-291969號公報中所記載的胺基苯乙酮系起始劑、日本專利第4225898號公報中所記載的醯基膦氧化物系起始劑、及已述的肟系起始劑,進而作為肟系起始劑,亦 可使用日本專利特開2001-233842號公報中所記載的化合物。 The photopolymerization initiator is more preferably a compound selected from the group consisting of an anthraquinone compound, an acetophenone-based compound, and a mercaptophosphine compound. More specifically, for example, an amino acetophenone-based initiator as described in JP-A-10-291969 and a thiophosphonium oxide-based initiator described in Japanese Patent No. 4,258,899 can be used. And the lanthanide initiator as described above, and further as a lanthanide initiator, The compound described in JP-A-2001-233842 can be used.

作為肟化合物,可使用作為市售品的豔佳固(IRGACURE)-OXE01(巴斯夫(BASF)公司製造)、IRGACURE-OXE02(巴斯夫公司製造)。作為苯乙酮系起始劑,可使用作為市售品的IRGACURE-907、IRGACURE-369、及IRGACURE-379(商品名:均為日本巴斯夫(BASF Japan)公司製造)。另外,作為醯基膦系起始劑,可使用作為市售品的IRGACURE-819或達羅卡(DAROCUR)-TPO(商品名:均為日本巴斯夫公司製造)。 As the ruthenium compound, IRGACURE-OXE01 (manufactured by BASF) and IRGACURE-OXE02 (manufactured by BASF Corporation), which are commercially available products, can be used. As the acetophenone-based initiator, IRGACURE-907, IRGACURE-369, and IRGACURE-379 (trade names: all manufactured by BASF Japan) can be used as a commercial product. Further, as the mercaptophosphine-based initiator, IRGACURE-819 or DAROCUR-TPO (trade name: all manufactured by BASF Corporation of Japan) which is a commercially available product can be used.

無機微粒子 Inorganic microparticles

含有銅化合物的組成物亦可含有無機微粒子作為所述銅化合物以外的其他近紅外線吸收性化合物。無機微粒子可僅使用1種,亦可使用2種以上。 The composition containing a copper compound may further contain inorganic fine particles as a near-infrared absorbing compound other than the copper compound. The inorganic fine particles may be used alone or in combination of two or more.

無機微粒子是主要發揮對紅外線進行遮光(吸收)的作用的粒子。作為無機微粒子,就紅外線遮光性更優異的觀點而言,較佳為選自由金屬氧化物粒子及金屬粒子所組成的群組中的至少1種。 The inorganic fine particles are particles which mainly function to block (absorb) infrared rays. The inorganic fine particles are preferably at least one selected from the group consisting of metal oxide particles and metal particles from the viewpoint of further excellent infrared light blocking properties.

作為無機微粒子,例如可列舉:氧化銦錫(Indium Tin Oxide,ITO)粒子、氧化銻錫(Antimony Tin Oxide,ATO)粒子、可由鋁摻雜的氧化鋅(可由Al摻雜的ZnO)粒子、摻雜有氟的二氧化錫(摻雜有F的SnO2)粒子、或摻雜有鈮的二氧化鈦(摻雜有Nb的TiO2)粒子等金屬氧化物粒子,或者銀(Ag)粒子、金(Au)粒子、銅(Cu)粒子、或鎳(Ni)粒子等金屬粒子。再者,為了 使紅外線遮光性與光微影性並存,理想的是曝光波長(365nm-405nm)的透過率高,較佳為氧化銦錫(ITO)粒子或氧化銻錫(ATO)粒子。 Examples of the inorganic fine particles include: Indium Tin Oxide (ITO) particles, Antimony Tin Oxide (ATO) particles, and zinc oxide (Al-doped ZnO) particles doped with aluminum, and doped Metal oxide particles such as fluorine-doped tin dioxide (such as F-doped SnO 2 ) or cerium-doped titanium dioxide (Nb-doped TiO 2 ) particles, or silver (Ag) particles or gold ( Au) Metal particles such as particles, copper (Cu) particles, or nickel (Ni) particles. Further, in order to cohere the infrared ray blocking property and the photo lithography, it is preferable that the transmittance at the exposure wavelength (365 nm to 405 nm) is high, and indium tin oxide (ITO) particles or strontium tin oxide (ATO) particles are preferable.

無機微粒子的形狀並無特別限制,不限於球狀、非球狀,亦可為片狀、線狀、管狀。 The shape of the inorganic fine particles is not particularly limited, and is not limited to a spherical shape or a non-spherical shape, and may be a sheet shape, a wire shape, or a tubular shape.

另外,可使用氧化鎢系化合物作為無機微粒子,具體而言,更佳為由下述通式(組成式)(I)所表示的氧化鎢系化合物。 In addition, a tungsten oxide-based compound can be used as the inorganic fine particles, and specifically, a tungsten oxide-based compound represented by the following general formula (composition formula) (I) is more preferable.

MxWyOz…(I) M x W y O z ...(I)

M表示金屬,W表示鎢,O表示氧。 M represents a metal, W represents tungsten, and O represents oxygen.

0.001≦x/y≦1.1 0.001≦x/y≦1.1

2.2≦z/y≦3.0 2.2≦z/y≦3.0

作為M的金屬,可列舉鹼金屬、鹼土金屬、Mg、Zr、Cr、Mn、Fe、Ru、Co、Rh、Ir、Ni、Pd、Pt、Cu、Ag、Au、Zn、Cd、Al、Ga、In、Tl、Sn、Pb、Ti、Nb、V、Mo、Ta、Re、Be、Hf、Os、Bi,較佳為鹼金屬,更佳為Rb或Cs,進而更佳為Cs。M的金屬可為1種,亦可為2種以上。 Examples of the metal of M include an alkali metal, an alkaline earth metal, Mg, Zr, Cr, Mn, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Al, Ga. And In, Tl, Sn, Pb, Ti, Nb, V, Mo, Ta, Re, Be, Hf, Os, Bi are preferably an alkali metal, more preferably Rb or Cs, and still more preferably Cs. The metal of M may be one type or two or more types.

藉由x/y為0.001以上,而可充分地遮蔽紅外線,藉由x/y為1.1以下,而可更確實地避免於氧化鎢系化合物中生成雜質相。 When x/y is 0.001 or more, infrared rays can be sufficiently shielded, and by x/y being 1.1 or less, it is possible to more reliably prevent the formation of an impurity phase in the tungsten oxide-based compound.

藉由z/y為2.2以上,而可進一步提昇作為材料的化學穩定性,藉由z/y為3.0以下,而可充分地遮蔽紅外線。 By z/y being 2.2 or more, the chemical stability of the material can be further improved, and by z/y being 3.0 or less, the infrared rays can be sufficiently shielded.

金屬氧化物較佳為氧化鎢銫。 The metal oxide is preferably tungsten oxide.

作為由所述通式(I)所表示的氧化鎢系化合物的具體例,可列舉Cs0.33WO3、Rb0.33WO3、K0.33WO3、Ba0.33WO3等,較佳為Cs0.33WO3或Rb0.33WO3,更佳為Cs0.33WO3Specific examples of the tungsten oxide-based compound represented by the above formula (I) include Cs 0.33 WO 3 , Rb 0.33 WO 3 , K 0.33 WO 3 , Ba 0.33 WO 3 , etc., preferably Cs 0.33 WO 3 . Or Rb 0.33 WO 3 , more preferably Cs 0.33 WO 3 .

金屬氧化物較佳為微粒子。金屬氧化物的平均粒徑較佳為800nm以下,更佳為400nm以下,進而更佳為200nm以下。藉由平均粒徑為此種範圍,金屬氧化物不易因光散射而遮斷可見光,因此可使可見光區域中的透光性變得更確實。就避免光散射的觀點而言,平均粒徑越小越佳,但就製造時的處理容易性等理由而言,金屬氧化物的平均粒徑通常為1nm以上。 The metal oxide is preferably a microparticle. The average particle diameter of the metal oxide is preferably 800 nm or less, more preferably 400 nm or less, still more preferably 200 nm or less. Since the average particle diameter is in such a range, the metal oxide is less likely to block visible light by light scattering, and thus the light transmittance in the visible light region can be made more reliable. In view of avoiding light scattering, the average particle diameter is preferably as small as possible, but the average particle diameter of the metal oxide is usually 1 nm or more for reasons such as ease of handling during production.

氧化鎢系化合物例如可作為住友金屬礦山股份有限公司製造的YMF-02、YMF-02A、YMS-01A-2、YMF-10A-1等鎢微粒子的分散物而獲得。 The tungsten oxide-based compound can be obtained, for example, as a dispersion of tungsten fine particles such as YMF-02, YMF-02A, YMS-01A-2, and YMF-10A-1 manufactured by Sumitomo Metal Mining Co., Ltd.

相對於含有金屬氧化物的組成物的總固體成分質量,金屬氧化物的含量較佳為0.01質量%~30質量%,更佳為0.1質量%~20質量%,進而更佳為1質量%~10質量%。 The content of the metal oxide is preferably from 0.01% by mass to 30% by mass, more preferably from 0.1% by mass to 20% by mass, even more preferably 1% by mass, based on the total solid content of the metal oxide-containing composition. 10% by mass.

含有銅化合物的組成物的黏度較佳為0.1mPa.s~3000mPa.s,更佳為0.1mPa.s~2000mPa.s,進而佳為1mPa.s~15mPa.s,進而更佳為1mPa.s~5mPa.s。 The viscosity of the composition containing the copper compound is preferably 0.1 mPa. s~3000mPa. s, more preferably 0.1mPa. s~2000mPa. s, and then preferably 1mPa. s~15mPa. s, and more preferably 1 mPa. s~5mPa. s.

相對於組成物,含有銅化合物的組成物的總固體成分較佳為1 質量%~50質量%,更佳為1質量%~30質量%,進而更佳為10質量%~30質量%。 The total solid content of the composition containing the copper compound is preferably 1 with respect to the composition. The mass % to 50% by mass, more preferably 1% by mass to 30% by mass, still more preferably 10% by mass to 30% by mass.

<<硬化性組成物>> <<Sclerosing composition>>

硬化性組成物至少含有硬化性化合物。硬化性化合物可為聚合性化合物,亦可為黏合劑等非聚合性化合物。另外,可為熱硬化性化合物,亦可為光硬化性化合物,但熱硬化性組成物的反應率更高,故較佳。 The curable composition contains at least a curable compound. The curable compound may be a polymerizable compound or a non-polymerizable compound such as a binder. Further, the thermosetting compound may be a photocurable compound, but the thermosetting composition has a higher reaction rate, which is preferable.

硬化性組成物較佳為含有氧雜環化合物,更佳為含有具有環氧基或氧雜環丁基的化合物,進而更佳為含有具有環氧基的化合物(環氧化合物)。另外,硬化性組成物較佳為含有具有不飽和雙鍵、環氧基或氧雜環丁基等交聯基的聚合體。 The curable composition preferably contains an oxygen heterocyclic compound, more preferably a compound having an epoxy group or an oxetanyl group, and still more preferably a compound having an epoxy group (epoxy compound). Further, the curable composition is preferably a polymer containing a crosslinking group having an unsaturated double bond, an epoxy group or an oxetanyl group.

<<具有聚合性基的化合物>> <<Compound with polymerizable group>>

具有聚合性基的化合物(以下,有時稱為「聚合性化合物」)是於該產業領域中廣為人知者,於本發明中可無特別限定地使用該些化合物。該些化合物例如可為單體、寡聚物、預聚物、聚合物等化學形態的任一種。 A compound having a polymerizable group (hereinafter sometimes referred to as "polymerizable compound") is widely known in the industrial field, and these compounds can be used without particular limitation in the present invention. These compounds may be, for example, any of chemical forms such as monomers, oligomers, prepolymers, and polymers.

<<<聚合性單體及聚合性寡聚物>>> <<<Polymerizable monomer and polymerizable oligomer>>>

硬化性組成物可含有具有聚合性基的單體(聚合性單體)、或具有聚合性基的寡聚物(聚合性寡聚物)(以下,有時將聚合性單體與聚合性寡聚物合稱為「聚合性單體等」)作為聚合性化合物。 The curable composition may contain a monomer having a polymerizable group (polymerizable monomer) or an oligomer having a polymerizable group (polymerizable oligomer) (hereinafter, a polymerizable monomer and a polymerizable oligomer may be sometimes used) The polymer is collectively referred to as a "polymerizable monomer or the like" as a polymerizable compound.

作為聚合性單體等的例子,可列舉不飽和羧酸(例如丙烯酸、甲基丙烯酸、衣康酸、巴豆酸、異巴豆酸、順丁烯二酸等)或其 酯類、醯胺類,較佳為不飽和羧酸與脂肪族多元醇化合物的酯、及不飽和羧酸與脂肪族多元胺化合物的醯胺類。另外,亦可適宜地使用具有羥基或胺基、巰基等親核性取代基的不飽和羧酸酯或醯胺類與單官能或多官能的異氰酸酯類或環氧類的加成反應物,或者與單官能或多官能的羧酸的脫水縮合反應物等。另外,具有異氰酸酯基或環氧基等親電子性取代基的不飽和羧酸酯或醯胺類與單官能或多官能的醇類、胺類、硫醇類的加成反應物,以及具有鹵素基或甲苯磺醯氧基等脫離性取代基的不飽和羧酸酯或醯胺類與單官能或多官能的醇類、胺類、硫醇類的取代反應物亦合適。另外,作為其他例,亦可使用代替所述不飽和羧酸而替換成不飽和膦酸、苯乙烯等乙烯基苯衍生物、乙烯基醚、烯丙基醚等的化合物群。 Examples of the polymerizable monomer and the like include an unsaturated carboxylic acid (for example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.) or The esters and guanamines are preferably esters of an unsaturated carboxylic acid and an aliphatic polyol compound, and amides of an unsaturated carboxylic acid and an aliphatic polyamine compound. Further, an addition reaction of an unsaturated carboxylic acid ester or a guanamine having a nucleophilic substituent such as a hydroxyl group, an amine group or a fluorenyl group with a monofunctional or polyfunctional isocyanate or epoxy group may be suitably used, or A dehydration condensation reaction with a monofunctional or polyfunctional carboxylic acid or the like. Further, an addition reaction of an unsaturated carboxylic acid ester or a guanamine having an electrophilic substituent such as an isocyanate group or an epoxy group with a monofunctional or polyfunctional alcohol, an amine or a thiol, and having a halogen A substituted reactant of an unsaturated carboxylic acid ester or a guanamine of a detachable substituent such as a sulfonyloxy group or a monofunctional or polyfunctional alcohol, an amine or a thiol is also suitable. Further, as another example, a compound group of a vinylbenzene derivative such as an unsaturated phosphonic acid or styrene, a vinyl ether or an allyl ether may be used instead of the unsaturated carboxylic acid.

作為該些的具體的化合物,於本發明中亦可適宜地使用日本專利特開2009-288705號公報的段落號0095~段落號0108中所記載的化合物。 As the specific compound, the compound described in Paragraph No. 0095 to Paragraph No. 0108 of JP-A-2009-288705 can also be suitably used in the present invention.

另外,聚合性單體等亦可使用具有至少1個可進行加成聚合的乙烯基、且於常壓下具有100℃以上的沸點的含有乙烯性不飽和基的化合物,亦可使用單官能(甲基)丙烯酸酯、二官能(甲基)丙烯酸酯、三官能以上的(甲基)丙烯酸酯(例如三官能~六官能的(甲基)丙烯酸酯)。 Further, as the polymerizable monomer or the like, a compound having an ethylenically unsaturated group having at least one vinyl group capable of undergoing addition polymerization and having a boiling point of 100 ° C or higher at normal pressure may be used, or a monofunctional group may be used ( Methyl) acrylate, difunctional (meth) acrylate, trifunctional or higher (meth) acrylate (for example, trifunctional to hexafunctional (meth) acrylate).

作為其例,可列舉:聚乙二醇單(甲基)丙烯酸酯、聚丙二醇單(甲基)丙烯酸酯、(甲基)丙烯酸苯氧基乙酯等單官能的丙烯酸酯或 甲基丙烯酸酯;聚乙二醇二(甲基)丙烯酸酯、三羥甲基乙烷三(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、己二醇(甲基)丙烯酸酯、三羥甲基丙烷三(丙烯醯氧基丙基)醚、三(丙烯醯氧基乙基)異氰脲酸酯、甘油或三羥甲基乙烷等在多官能醇中加成環氧乙烷或環氧丙烷後進行(甲基)丙烯酸酯化而成者。 Examples thereof include monofunctional acrylates such as polyethylene glycol mono(meth)acrylate, polypropylene glycol mono(meth)acrylate, and phenoxyethyl (meth)acrylate. Methacrylate; polyethylene glycol di(meth)acrylate, trimethylolethane tri(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol tri(meth)acrylic acid Ester, pentaerythritol tetra(meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, hexane diol (meth) acrylate, trimethylolpropane tris (propylene hydrazine) After the addition of ethylene oxide or propylene oxide to a polyfunctional alcohol, oxypropyl)ether, tris(propyleneoxyethyl)isocyanurate, glycerin or trimethylolethane (A) Base) Acrylate.

作為聚合性化合物,可使用:伸乙氧基改質季戊四醇四丙烯酸酯(市售品為NK ESTER ATM-35E;新中村化學公司製造)、二季戊四醇三丙烯酸酯(市售品為卡亞拉得(KAYARAD)D-330;日本化藥股份有限公司製造)、二季戊四醇四丙烯酸酯(市售品為KAYARAD D-320;日本化藥股份有限公司製造)、二季戊四醇五(甲基)丙烯酸酯(市售品為KAYARAD D-310;日本化藥股份有限公司製造)、二季戊四醇六(甲基)丙烯酸酯(市售品為KAYARAD DPHA;日本化藥股份有限公司製造)、及該些的(甲基)丙烯醯基介於乙二醇殘基、丙二醇殘基之間的結構。另外,亦可使用該些的寡聚物型。於本發明中,亦可使用日本專利特開2007-269779號公報的段落號0248~段落號0251中所記載的化合物。 As the polymerizable compound, ethoxylated pentylenetetraol tetraacrylate (commercially available as NK ESTER ATM-35E; manufactured by Shin-Nakamura Chemical Co., Ltd.) and dipentaerythritol triacrylate (commercially available as Kayad) can be used. (KAYARAD) D-330; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol tetraacrylate (commercially available as KAYARAD D-320; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol penta (meth) acrylate (produced by Nippon Chemical Co., Ltd.) Commercial product is KAYARAD D-310; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol hexa(meth) acrylate (commercially available as KAYARAD DPHA; manufactured by Nippon Kayaku Co., Ltd.), and The structure in which the acrylonitrile group is between the ethylene glycol residue and the propylene glycol residue. In addition, these oligomer types can also be used. In the present invention, the compound described in Paragraph No. 0248 to Paragraph No. 0251 of JP-A-2007-269779 can also be used.

作為聚合性單體等,可列舉日本專利特開2012-208494號公報段落0477(相對應的美國專利申請公開第2012/0235099號說明 書的[0585])中所記載的聚合性單體等,該些的內容可被編入至本申請案說明書中。另外,可使用二甘油環氧乙烷(Ethylene Oxide,EO)改質(甲基)丙烯酸酯(市售品為M-460;東亞合成製造)。亦可使用季戊四醇四丙烯酸酯(新中村化學製造,A-TMMT)、1,6-己二醇二丙烯酸酯(日本化藥公司製造,KAYARAD HDDA)。亦可使用該些的寡聚物型。 Examples of the polymerizable monomer and the like include a description of paragraph 0477 of the Japanese Patent Application Publication No. 2012-208494 (corresponding U.S. Patent Application Publication No. 2012/0235099) The polymerizable monomer and the like described in [0585] of the book, the contents of which can be incorporated into the specification of the present application. Further, Ethylene Oxide (EO) modified (meth) acrylate (commercially available as M-460; manufactured by Toago Seisakusho Co., Ltd.) can be used. Pentaerythritol tetraacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd., A-TMMT), 1,6-hexanediol diacrylate (manufactured by Nippon Kayaku Co., Ltd., KAYARAD HDDA) can also be used. These oligomer types can also be used.

例如可列舉RP-1040(日本化藥股份有限公司製造)等。 For example, RP-1040 (made by Nippon Kayaku Co., Ltd.) or the like can be mentioned.

於本發明中,具有酸基的單體為脂肪族聚羥基化合物與不飽和羧酸的酯,可使用使脂肪族聚羥基化合物的未反應的羥基與非芳香族羧酸酐進行反應而具有酸基的多官能單體。作為市售品,例如可列舉:作為東亞合成股份有限公司製造的多元酸改質丙烯酸寡聚物的阿羅尼斯(Aronix)系列的M-305、M-510、M-520等。 In the present invention, the monomer having an acid group is an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid, and an acid group can be used by reacting an unreacted hydroxyl group of an aliphatic polyhydroxy compound with a non-aromatic carboxylic anhydride. Polyfunctional monomer. As a commercial item, the Aronix series M-305, M-510, M-520, etc. which are the polyacid modified acrylic oligomer manufactured by the East Asia Synthesizing Corporation are mentioned, for example.

具有酸基的多官能單體的酸值為0.1mg-KOH/g~40mg-KOH/g,較佳為5mg-KOH/g~30mg-KOH/g。當併用2種以上酸基不同的多官能單體時、或當併用不具有酸基的多官能單體時,必須以整體的多官能單體的酸值處於所述範圍內的方式進行調整。 The acid value of the polyfunctional monomer having an acid group is from 0.1 mg-KOH/g to 40 mg-KOH/g, preferably from 5 mg-KOH/g to 30 mg-KOH/g. When two or more kinds of polyfunctional monomers having different acid groups are used in combination, or when a polyfunctional monomer having no acid group is used in combination, it is necessary to adjust such that the acid value of the entire polyfunctional monomer is within the above range.

<<<側鏈上具有聚合性基的聚合物>>> <<<Polymer with polymerizable group on side chain>>>

硬化性組成物亦可含有側鏈上具有聚合性基的聚合物作為聚合性化合物。作為聚合性基,可列舉乙烯性不飽和雙鍵基、環氧基或氧雜環丁基。 The curable composition may also contain a polymer having a polymerizable group in a side chain as a polymerizable compound. The polymerizable group may, for example, be an ethylenically unsaturated double bond group, an epoxy group or an oxetanyl group.

<<<具有環氧基或氧雜環丁基的化合物>>> <<<Compounds with epoxy or oxetanyl group>>>

硬化性組成物可含有具有環氧基或氧雜環丁基的化合物作為聚合性化合物。作為具有環氧基或氧雜環丁基的化合物,具體而言,有側鏈上具有環氧基的聚合物、及分子內具有2個以上的環氧基的聚合性單體或寡聚物,可列舉:雙酚A型環氧樹脂、雙酚F型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、脂肪族環氧樹脂等。另外,亦可列舉單官能縮水甘油基醚化合物或多官能縮水甘油基醚化合物。 The curable composition may contain a compound having an epoxy group or an oxetanyl group as a polymerizable compound. Specific examples of the compound having an epoxy group or an oxetanyl group include a polymer having an epoxy group in a side chain and a polymerizable monomer or oligomer having two or more epoxy groups in the molecule. Examples thereof include bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, and aliphatic epoxy resin. Further, a monofunctional glycidyl ether compound or a polyfunctional glycidyl ether compound can also be mentioned.

該些化合物可使用市售品,亦可藉由向聚合物的側鏈導入環氧基來獲得。 These compounds can be used as a commercial product, and can also be obtained by introducing an epoxy group into a side chain of a polymer.

作為市售品,例如可參考日本專利特開2012-155288號公報段落0191等的記載,該些的內容可被編入至本申請案說明書中。 As a commercial item, for example, the description of Japanese Patent Laid-Open No. 2012-155288, paragraph 0191, and the like can be referred to, and the contents of the present invention can be incorporated into the specification of the present application.

另外,作為市售品,可列舉:丹納考爾(Denacol)EX-212L、EX-214L、EX-216L、EX-321L、EX-850L(以上,長瀨化成(Nagase chemteX)(股份)製造)等多官能脂肪族縮水甘油基醚化合物。該些為低氯品,但亦可同樣地使用並非低氯品的EX-212、EX-214、EX-216、EX-321、EX-850等。 In addition, as a commercial item, Denacol EX-212L, EX-214L, EX-216L, EX-321L, EX-850L (above, Nagase chemteX (share) manufacturing) a polyfunctional aliphatic glycidyl ether compound. These are low-chlorine products, but EX-212, EX-214, EX-216, EX-321, EX-850, etc. which are not low-chlorine products can also be used similarly.

除此以外,亦可列舉:艾迪科樹脂(ADEKA RESIN)EP-4000S、ADEKA RESIN EP-4003S、ADEKA RESIN EP-4010S、ADEKA RESIN EP-4011S(以上,艾迪科(ADEKA)(股份)製造),NC-2000、NC-3000、NC-7300、XD-1000、EPPN-501、EPPN-502(以上,艾迪科(股份)製造),JER1031S等。 In addition, ADEKA RESIN EP-4000S, ADEKA RESIN EP-4003S, ADEKA RESIN EP-4010S, ADEKA RESIN EP-4011S (above, ADEKA) ), NC-2000, NC-3000, NC-7300, XD-1000, EPPN-501, EPPN-502 (above, manufactured by Eddie Co., Ltd.), JER1031S, etc.

進而,作為苯酚酚醛清漆型環氧樹脂的市售品,可列舉:JER-157S65、JER-152、JER-154、JER-157S70(以上,三菱化學(股份)製造)等。 In addition, as a commercial item of the phenol novolak type epoxy resin, JER-157S65, JER-152, JER-154, JER-157S70 (above, Mitsubishi Chemical (made)), etc. are mentioned.

作為側鏈上具有氧雜環丁基的聚合物、及所述分子內具有2個以上的氧雜環丁基的聚合性單體或寡聚物的具體例,可使用:阿隆氧雜環丁烷(ARONE OXETANE)OXT-121、OXT-221、OX-SQ、PNOX(以上,東亞合成(股份)製造)。 Specific examples of the polymer having an oxetanyl group in the side chain and the polymerizable monomer or oligomer having two or more oxetanyl groups in the molecule: aronoxacyclohexane Butane (ARONE OXETANE) OXT-121, OXT-221, OX-SQ, PNOX (above, manufactured by Toagosei Co., Ltd.).

當向聚合物側鏈導入來進行合成時,導入反應例如藉由如下方式來進行:將三乙胺、苄基甲胺等三級胺,十二基三甲基氯化銨、四甲基氯化銨、四乙基氯化銨等四級銨鹽,吡啶,三苯基膦等作為觸媒,於有機溶劑中,以50℃~150℃的反應溫度進行幾小時~幾十小時的反應。脂環式環氧不飽和化合物的導入量能夠以變成所獲得的聚合物的酸值滿足5KOH.mg/g~200KOH.mg/g的範圍的方式進行控制。另外,分子量以重量平均計為500~5000000,進而可設為1000~500000的範圍。 When the synthesis is carried out by introducing into the polymer side chain, the introduction reaction is carried out, for example, by using a tertiary amine such as triethylamine or benzylmethylamine, dodecyltrimethylammonium chloride or tetramethyl chloride. A quaternary ammonium salt such as ammonium chloride or tetraethylammonium chloride, pyridine or triphenylphosphine is used as a catalyst, and the reaction is carried out in an organic solvent at a reaction temperature of 50 ° C to 150 ° C for several hours to several tens of hours. The introduction amount of the alicyclic epoxy unsaturated compound can be such that the acid value of the obtained polymer satisfies 5 KOH. Mg/g~200KOH. The range of mg/g is controlled in a manner. Further, the molecular weight is 500 to 5,000,000 on a weight average basis, and may be in the range of 1,000 to 500,000.

作為環氧不飽和化合物,亦可使用(甲基)丙烯酸縮水甘油酯或烯丙基縮水甘油基醚等具有縮水甘油基作為環氧基者。作為此種化合物,例如可參考日本專利特開2009-265518號公報段落0045等的記載,該些的內容可被編入至本申請案說明書中。 As the epoxy unsaturated compound, a glycidyl group such as glycidyl (meth)acrylate or allyl glycidyl ether can also be used as the epoxy group. As such a compound, for example, the description of paragraphs 0045 of JP-A-2009-265518, and the like can be referred to, and the contents of the present invention can be incorporated into the specification of the present application.

硬化性組成物較佳為包含具有不飽和雙鍵、環氧基或氧雜環丁基等交聯基的聚合體。藉此,可使製成硬化膜時的製膜性(裂痕或翹曲的抑制)及耐濕性變得更良好。具體而言,可列舉 具有下述的重複單元的聚合體。作為具有下述重複單元的聚合體,較佳為具有環氧基的聚合體。 The curable composition is preferably a polymer comprising a crosslinking group having an unsaturated double bond, an epoxy group or an oxetanyl group. Thereby, the film formability (suppression of cracks or warpage) and moisture resistance at the time of forming a cured film can be further improved. Specifically, it can be enumerated A polymer having the repeating unit described below. The polymer having the following repeating unit is preferably a polymer having an epoxy group.

<<<具有由式(11)所表示的部分結構的化合物>>> <<<Compound having a partial structure represented by formula (11)>>>

硬化性組成物中所含有的硬化性化合物具有由下述式(11)所表示的部分結構亦較佳,該硬化性化合物亦可具有不飽和雙鍵、環氧基或氧雜環丁基等交聯基。 The curable compound contained in the curable composition preferably has a partial structure represented by the following formula (11), and the curable compound may have an unsaturated double bond, an epoxy group or an oxetanyl group. Crosslinking base.

式(11)中,R1表示氫原子或有機基。 In the formula (11), R 1 represents a hydrogen atom or an organic group.

藉由含有此種化合物,當將本發明中所使用的膜形成用組成物製成硬化膜時,可進一步提昇近紅外線遮蔽性,且可進一步提昇耐濕性。 When the film-forming composition used in the present invention is formed into a cured film by containing such a compound, the near-infrared ray shielding property can be further improved, and the moisture resistance can be further improved.

式(11)中,R1表示氫原子或有機基。作為有機基,可列舉烴基,具體而言,可列舉烷基或芳基,較佳為碳數為1~20的烷基、碳數為6~20的芳基、或包含該些基與二價的連結基的組合者。 In the formula (11), R 1 represents a hydrogen atom or an organic group. The organic group may, for example, be a hydrocarbon group, and specifically, an alkyl group or an aryl group, preferably an alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms, or the same The combination of the price of the link.

作為此種有機基的具體例,較佳為-OR',-SR',或包含該些基與-(CH2)m-(m為1~10的整數)、碳數為5~10的環狀的伸烷基、-O-、-CO-、-COO-及-NH-的至少1個的組合者。此處,R'較佳為氫原子、碳數為1~10的直鏈烷基、碳數為3~10的分支或環狀的烷基(較佳為碳數為1~7的直鏈烷基、碳數為3~7的分支或環狀的烷基)、碳數為6~10的芳基、或包含碳數為6~10的芳基與碳數為1~10的伸烷基的組合的基。 Specific examples of such an organic group are preferably -OR', -SR', or include the group and -(CH 2 ) m - (m is an integer of 1 to 10), and the carbon number is 5 to 10. A combination of at least one of a cyclic alkyl group, -O-, -CO-, -COO-, and -NH-. Here, R' is preferably a hydrogen atom, a linear alkyl group having 1 to 10 carbon atoms, a branched or cyclic alkyl group having 3 to 10 carbon atoms (preferably a linear chain having 1 to 7 carbon atoms). An alkyl group, a branched or cyclic alkyl group having 3 to 7 carbon atoms, an aryl group having 6 to 10 carbon atoms, or an aryl group having 6 to 10 carbon atoms and an alkylene group having 1 to 10 carbon atoms The basis of the combination of the bases.

另外,式(11)中,R1與C可鍵結而形成環結構(雜環結構)。雜環結構中的雜原子為所述式(11)中的氮原子。雜環結構較佳 為5員環結構或6員環結構,更佳為5員環結構。雜環結構亦可為縮合環,但較佳為單環。 Further, in the formula (11), R 1 and C may be bonded to form a ring structure (heterocyclic structure). The hetero atom in the heterocyclic structure is the nitrogen atom in the formula (11). The heterocyclic structure is preferably a 5-membered ring structure or a 6-membered ring structure, more preferably a 5-membered ring structure. The heterocyclic structure may also be a condensed ring, but is preferably a single ring.

作為特佳的R1的具體例,可列舉:氫原子、碳數為1~3的烷基、包含-OR'(R'為碳數為1~5的直鏈的烷基)與-(CH2)m-(m為1~10的整數,較佳為m為1~5的整數)的組合的基、所述式(11)中的R1與C鍵結而形成雜環結構(較佳為5員環結構)的基。 Specific examples of the particularly preferable R 1 include a hydrogen atom, an alkyl group having 1 to 3 carbon atoms, and -OR'(R' is a linear alkyl group having 1 to 5 carbon atoms) and -( CH 2 ) m - (m is an integer of 1 to 10, preferably m is an integer of 1 to 5), and R 1 and C in the formula (11) are bonded to each other to form a heterocyclic structure ( It is preferably a base of a 5-membered ring structure.

具有由所述式(11)所表示的部分結構的化合物較佳為由(聚合體的主鏈結構-所述式(11)的部分結構-R1)表示、或由(A-所述式(11)的部分結構-B)表示。此處,A為碳數為1~10的直鏈烷基、碳數為3~10的分支烷基、或碳數為3~10的環狀的烷基。另外,B為包含-(CH2)m-(m為1~10的整數,較佳為m為1~5的整數)與所述式(11)的部分結構及聚合性基的組合的基。 The compound having a partial structure represented by the above formula (11) is preferably represented by (the main chain structure of the polymer - the partial structure of the formula (11) - R 1 ), or by (A- Partial structure of (11) - B) representation. Here, A is a linear alkyl group having 1 to 10 carbon atoms, a branched alkyl group having 3 to 10 carbon atoms, or a cyclic alkyl group having 3 to 10 carbon atoms. Further, B is a group containing -(CH 2 ) m - (m is an integer of 1 to 10, preferably m is an integer of 1 to 5) and a combination of a partial structure and a polymerizable group of the formula (11) .

另外,具有由所述式(11)所表示的部分結構的化合物較佳為具有由下述式(11-1)~式(11-5)的任一者所表示的結構。 Further, the compound having a partial structure represented by the above formula (11) preferably has a structure represented by any one of the following formulas (11-1) to (11-5).

(式(11-1)中,R4表示氫原子或甲基,R5及R6分別獨立地表示氫原子或有機基。式(11-2)中,R7表示氫原子或甲基。式(11-3)中,L1表示二價的連結基,R8表示氫原子或有機基。式(11-4)中,L2及L3分別獨立地表示二價的連結基,R9及R10分別獨立地表示氫原子或有機基。式(11-5)中,L4表示二價的連結基,R11~R14分別獨立地表示氫原子或有機基) (In the formula (11-1), R 4 represents a hydrogen atom or a methyl group, and R 5 and R 6 each independently represent a hydrogen atom or an organic group. In the formula (11-2), R 7 represents a hydrogen atom or a methyl group. In the formula (11-3), L 1 represents a divalent linking group, and R 8 represents a hydrogen atom or an organic group. In the formula (11-4), L 2 and L 3 each independently represent a divalent linking group, and R 9 and R 10 each independently represent a hydrogen atom or an organic group. In the formula (11-5), L 4 represents a divalent linking group, and R 11 to R 14 each independently represent a hydrogen atom or an organic group)

所述式(11-1)中,R5及R6分別獨立地表示氫原子或有機基。作為有機基,其含義與所述式(11)中的R1相同,較佳的範圍亦相同。 In the formula (11-1), R 5 and R 6 each independently represent a hydrogen atom or an organic group. The organic group has the same meaning as R 1 in the above formula (11), and the preferred range is also the same.

所述式(11-3)~式(11-5)中,L1~L4表示二價的連結基。作為二價的連結基,較佳為-(CH2)m-(m為1~10的整數)、碳數為5~10的環狀的伸烷基、包含與-O-、-CO-、-COO-及-NH-的至少1個的組合者,更佳為-(CH2)m-(m為1~8的整數)。 In the formula (11-3) to the formula (11-5), L 1 to L 4 represent a divalent linking group. The divalent linking group is preferably -(CH 2 ) m - (m is an integer of 1 to 10), a cyclic alkyl group having a carbon number of 5 to 10, and contains -O-, -CO- Further, at least one combination of -COO- and -NH- is more preferably -(CH 2 ) m - (m is an integer of 1 to 8).

所述式(11-3)~式(11-5)中,R8~R14分別獨立地表示氫原子或有機基。作為有機基,較佳為烴基,具體而言,較佳為烷基或烯基。 In the formula (11-3) to the formula (11-5), R 8 to R 14 each independently represent a hydrogen atom or an organic group. As the organic group, a hydrocarbon group is preferred, and specifically, an alkyl group or an alkenyl group is preferred.

烷基可被取代。另外,烷基可為鏈狀、分枝狀、環狀的任一種,較佳為直鏈狀或環狀的烷基。作為烷基,較佳為碳數為1~10的烷基,更佳為碳數為1~8的烷基,進而更佳為碳數為1~6的 烷基。 An alkyl group can be substituted. Further, the alkyl group may be in the form of a chain, a branch or a ring, and is preferably a linear or cyclic alkyl group. The alkyl group is preferably an alkyl group having 1 to 10 carbon atoms, more preferably an alkyl group having 1 to 8 carbon atoms, and still more preferably 1 to 6 carbon atoms. alkyl.

烯基可被取代。作為烯基,較佳為碳數為1~10的烯基,更佳為碳數為1~4的烯基,特佳為乙烯基。 Alkenyl groups can be substituted. The alkenyl group is preferably an alkenyl group having 1 to 10 carbon atoms, more preferably an alkenyl group having 1 to 4 carbon atoms, and particularly preferably a vinyl group.

作為取代基,例如可例示:聚合性基、鹵素原子、烷基、羧酸酯基、鹵化烷基、烷氧基、甲基丙烯醯氧基、丙烯醯氧基、醚基、磺醯基、硫醚基、醯胺基、醯基、羥基、羧酸基等。該些取代基之中,較佳為聚合性基(例如乙烯基、(甲基)丙烯醯氧基、(甲基)丙烯醯基、環氧基、氮丙啶基等),更佳為乙烯基。 The substituent may, for example, be a polymerizable group, a halogen atom, an alkyl group, a carboxylate group, a halogenated alkyl group, an alkoxy group, a methacryloxy group, an acryloxy group, an ether group or a sulfonyl group. A thioether group, a decylamino group, a fluorenyl group, a hydroxyl group, a carboxylic acid group or the like. Among these substituents, a polymerizable group (e.g., a vinyl group, a (meth) propylene fluorenyl group, a (meth) acryl fluorenyl group, an epoxy group, an aziridine group, etc.) is preferred, and ethylene is more preferred. base.

另外,具有由所述式(11)所表示的部分結構的化合物可為單體,亦可為聚合物,但較佳為聚合物。即,具有由所述式(11)所表示的部分結構的化合物較佳為由所述式(11-1)或所述式(11-2)所表示的化合物。 Further, the compound having a partial structure represented by the above formula (11) may be a monomer or a polymer, but is preferably a polymer. That is, the compound having a partial structure represented by the above formula (11) is preferably a compound represented by the above formula (11-1) or the formula (11-2).

另外,當具有由所述式(11)所表示的部分結構的化合物為聚合物時,較佳為於聚合物的側鏈上含有所述部分結構。 Further, when the compound having a partial structure represented by the above formula (11) is a polymer, it is preferred to contain the partial structure in the side chain of the polymer.

具有由所述式(11)所表示的部分結構的化合物的分子量較佳為50~1000000,更佳為500~500000。藉由設為此種分子量,而可更有效地達成本發明的效果。 The molecular weight of the compound having a partial structure represented by the formula (11) is preferably from 50 to 1,000,000, more preferably from 500 to 500,000. By setting such a molecular weight, the effect of the present invention can be more effectively achieved.

於本發明中所使用的組成物中,具有由所述式(11)所表示的部分結構的化合物的含量較佳為5質量%~80質量%,更佳為10質量%~60質量%。 In the composition used in the present invention, the content of the compound having a partial structure represented by the above formula (11) is preferably from 5% by mass to 80% by mass, more preferably from 10% by mass to 60% by mass.

作為具有由所述式(11)所表示的部分結構的化合物的具體例,可列舉具有下述結構的化合物或下述例示化合物,但並 不限定於該些化合物。於本發明中,特佳為具有由所述式(11)所表示的部分結構的化合物為聚丙烯醯胺。 Specific examples of the compound having a partial structure represented by the above formula (11) include a compound having the following structure or the following exemplified compound, but It is not limited to these compounds. In the present invention, a compound particularly having a partial structure represented by the formula (11) is a polyacrylamide.

另外,作為具有由所述式(11)所表示的部分結構的化合物的具體例,可列舉水溶性聚合物,作為較佳的主鏈結構,可列舉:聚乙烯吡咯啶酮、聚(甲基)丙烯醯胺、聚醯胺、聚胺基甲酸酯、聚脲。水溶性聚合物可為共聚物,共聚物亦可為無規共聚物。 Further, specific examples of the compound having a partial structure represented by the above formula (11) include a water-soluble polymer, and preferred examples of the main chain structure include polyvinylpyrrolidone and poly(methyl). Acrylamide, polyamine, polyurethane, polyurea. The water soluble polymer may be a copolymer, and the copolymer may also be a random copolymer.

作為聚乙烯吡咯啶酮,可使用商品名KW-30(日本觸媒公司製造)。 As the polyvinylpyrrolidone, a trade name of KW-30 (manufactured by Nippon Shokubai Co., Ltd.) can be used.

作為聚(甲基)丙烯醯胺,可列舉(甲基)丙烯醯胺的聚合體、共聚物。作為丙烯醯胺的具體例,可列舉:丙烯醯胺、N-甲基丙烯醯胺、N-乙基丙烯醯胺、N-丙基丙烯醯胺、N-丁基丙烯醯胺、N-苄基丙烯醯胺、N-羥基乙基丙烯醯胺、N-苯基丙烯醯胺、N-甲苯基丙烯醯胺、N-(羥基苯基)丙烯醯胺、N-(胺磺醯基苯基) 丙烯醯胺、N-(苯基磺醯基)丙烯醯胺、N-(甲苯基磺醯基)丙烯醯胺、N,N-二甲基丙烯醯胺、N-甲基-N-苯基丙烯醯胺、N-羥基乙基-N-甲基丙烯醯胺等。另外,亦可同樣地使用對應於該些的甲基丙烯醯胺。 Examples of the poly(meth)acrylamide include a polymer or a copolymer of (meth)acrylamide. Specific examples of the acrylamide include acrylamide, N-methyl acrylamide, N-ethyl acrylamide, N-propyl acrylamide, N-butyl acrylamide, and N-benzyl. Acrylamide, N-hydroxyethyl acrylamide, N-phenyl acrylamide, N-tolyl acrylamide, N-(hydroxyphenyl) acrylamide, N-(amine sulfonylphenyl) ) Acrylamide, N-(phenylsulfonyl)propenylamine, N-(methylsulfonyl)propenylamine, N,N-dimethylpropenamide, N-methyl-N-phenyl Acrylamide, N-hydroxyethyl-N-methylpropenylamine, and the like. Further, methacrylamide corresponding to these may be used in the same manner.

水溶性聚醯胺樹脂尤其可列舉聚醯胺樹脂與親水性化合物進行共聚而成的化合物。所謂水溶性聚醯胺樹脂的衍生物,例如是指以下的化合物:如將水溶性聚醯胺樹脂作為原料,且醯胺鍵(-CONH-)的氫(-原子經甲氧基甲基CH2OCH3)取代而成的化合物般,水溶性聚醯胺樹脂分子中的原子經取代、或藉由加成反應而導致醯胺鍵的結構變化的化合物。 The water-soluble polyamine resin may, for example, be a compound obtained by copolymerizing a polyamide resin with a hydrophilic compound. The derivative of the water-soluble polyamine resin is, for example, a compound such as a water-soluble polyamine resin as a raw material, and hydrogen of a guanamine bond (-CONH-) (-atom via methoxymethyl CH) 2 OCH 3 ) A compound in which a molecule in a water-soluble polyamine resin molecule is substituted or a structure change of a guanamine bond is caused by an addition reaction.

作為聚醯胺樹脂,例如可列舉:藉由ω-胺基酸的聚合所合成的所謂的「n-尼龍」、或藉由二胺與二羧酸的共聚所合成的所謂的「n,m-尼龍」。其中,就賦予親水性的觀點而言,較佳為二胺與二羧酸的共聚物,更佳為ε-己內醯胺與二羧酸的反應產物。 The polyamine resin may, for example, be a so-called "n-nylon" synthesized by polymerization of an ω-amino acid or a so-called "n, m" synthesized by copolymerization of a diamine and a dicarboxylic acid. -nylon". Among them, from the viewpoint of imparting hydrophilicity, a copolymer of a diamine and a dicarboxylic acid is preferred, and a reaction product of ε-caprolactam and a dicarboxylic acid is more preferred.

作為親水性化合物,可列舉親水性含氮環狀化合物、聚伸烷基二醇等。 Examples of the hydrophilic compound include a hydrophilic nitrogen-containing cyclic compound, a polyalkylene glycol, and the like.

此處,所謂親水性含氮環狀化合物,是指側鏈或主鏈上具有三級胺成分的化合物,例如可列舉:胺基乙基哌嗪、雙胺基丙基哌嗪、α-二甲胺基ε-己內醯胺等。 Here, the hydrophilic nitrogen-containing cyclic compound means a compound having a tertiary amine component in a side chain or a main chain, and examples thereof include an aminoethyl piperazine, a bisaminopropyl piperazine, and an α-di Methylamino ε-caprolactam and the like.

另一方面,於聚醯胺樹脂與親水性化合物進行共聚而成的化合物中,因聚醯胺樹脂的主鏈與例如選自由親水性含氮環狀化合物及聚伸烷基二醇所組成的群組中的至少一者進行共聚,故相對 於N-甲氧基甲基化尼龍,聚醯胺樹脂的醯胺鍵部的氫鍵結能力大。 On the other hand, in the compound obtained by copolymerizing a polyamide resin with a hydrophilic compound, the main chain of the polyamide resin is, for example, selected from the group consisting of a hydrophilic nitrogen-containing cyclic compound and a polyalkylene glycol. At least one of the groups is copolymerized, so In the N-methoxymethylated nylon, the polyamide bond of the polyamide resin has a large hydrogen bonding ability.

聚醯胺樹脂與親水性化合物進行共聚而成的化合物之中,較佳為1)ε-己內醯胺與親水性含氮環狀化合物及二羧酸的反應產物、以及2)ε-己內醯胺與聚伸烷基二醇及二羧酸的反應產物。 Among the compounds obtained by copolymerizing a polyamide resin with a hydrophilic compound, 1) a reaction product of ε-caprolactam with a hydrophilic nitrogen-containing cyclic compound and a dicarboxylic acid, and 2) ε-hexa The reaction product of mesamine and a polyalkylene glycol and a dicarboxylic acid.

該些例如由東麗精密科技(TORAY FINETECH)(股份)以「AQ尼龍」這一商標進行市售。ε-己內醯胺與親水性含氮環狀化合物及二羧酸的反應產物可作為東麗精密科技(股份)製造的AQ尼龍A-90而獲得,ε-己內醯胺與聚伸烷基二醇及二羧酸的反應產物可作為東麗精密科技(股份)製造的AQ尼龍P-70而獲得。可使用AQ尼龍A-90、P-70、P-95、T-70(東麗公司製造)。 These are commercially available, for example, by TORAY FINETECH (shares) under the trademark "AQ Nylon". The reaction product of ε-caprolactam with a hydrophilic nitrogen-containing cyclic compound and a dicarboxylic acid can be obtained as AQ nylon A-90 manufactured by Toray Precision Technology Co., Ltd., ε-caprolactam and polyalkylene The reaction product of the diol and the dicarboxylic acid can be obtained as AQ nylon P-70 manufactured by Toray Precision Technology Co., Ltd. AQ nylon A-90, P-70, P-95, T-70 (manufactured by Toray Industries, Inc.) can be used.

包含具有由所述式(11)所表示的部分結構的重複單元與具有環氧基的重複單元的聚合體的莫耳比較佳為10/90~90/10,更佳為30/70~70/30。所述共聚物的重量平均分子量較佳為3,000~1,000,000,更佳為5,000~200,000。 The molar of the polymer comprising a repeating unit having a partial structure represented by the formula (11) and a repeating unit having an epoxy group is preferably from 10/90 to 90/10, more preferably from 30/70 to 70. /30. The weight average molecular weight of the copolymer is preferably from 3,000 to 1,000,000, more preferably from 5,000 to 200,000.

該些聚合性化合物的結構、單獨使用或併用、添加量等使用方法的詳細情況可結合組成物的最終的性能設計而任意地設定。例如,就感度的觀點而言,較佳為每1分子的不飽和基含量多的結構,於多數情況下,較佳為二官能以上。另外,就提高近紅外線截止濾光片的強度的觀點而言,較佳為三官能以上的聚合性化合物,進而,藉由併用官能基數不同.聚合性基不同(例如丙烯酸酯、甲基丙烯酸酯、苯乙烯系化合物、乙烯基醚系化合物)的聚合性化合物,而調節感度與強度兩者的方法亦有效。另外, 對於與組成物中所含有的其他成分(例如金屬氧化物、色素、聚合起始劑)的相容性、分散性而言,聚合性化合物的選擇.使用法亦是重要的因素,例如,有時可使用低純度化合物或併用2種以上來提昇相容性。另外,就提昇與支撐體等的硬質表面的密接性的觀點而言,亦可選擇特定的結構。 The details of the structure, the use alone or in combination, and the amount of use of the polymerizable compounds can be arbitrarily set in combination with the final performance design of the composition. For example, from the viewpoint of sensitivity, a structure having a large content of an unsaturated group per molecule is preferable, and in many cases, a difunctional or higher is preferable. Moreover, from the viewpoint of improving the strength of the near-infrared cut filter, a trifunctional or higher polymerizable compound is preferable, and the number of functional groups is different by the combination. A polymerizable compound having a different polymerizable group (for example, an acrylate, a methacrylate, a styrene compound, or a vinyl ether compound) is effective for adjusting both sensitivity and strength. In addition, For the compatibility and dispersibility of other components (such as metal oxides, pigments, polymerization initiators) contained in the composition, the choice of polymerizable compounds. The use method is also an important factor. For example, it is sometimes possible to use a low-purity compound or a combination of two or more types to improve compatibility. Moreover, a specific structure can also be selected from the viewpoint of improving the adhesion to a hard surface such as a support.

相對於除溶劑以外的總固體成分,硬化性組成物中的聚合性化合物的添加量可設為1質量%~100質量%,更佳為設為10質量%~100質量%的範圍。 The amount of the polymerizable compound to be added to the curable composition can be from 1% by mass to 100% by mass, and more preferably from 10% by mass to 100% by mass, based on the total solid content of the solvent.

另外,當使用含有具有交聯基的重複單元的聚合體作為聚合性化合物時,相對於除溶劑以外的硬化性組成物的總固體成分,較佳為設為10質量%~100質量%,更佳為設為20質量%~100質量%的範圍。 In addition, when a polymer containing a repeating unit having a crosslinking group is used as the polymerizable compound, the total solid content of the curable composition other than the solvent is preferably 10% by mass to 100% by mass. The ratio is preferably in the range of 20% by mass to 100% by mass.

聚合性化合物可僅為1種,亦可為2種以上,於2種以上的情況下,合計量變成所述範圍。 The polymerizable compound may be used alone or in combination of two or more kinds. In the case of two or more types, the total amount is in the above range.

硬化性組成物亦可含有硬化性化合物以外的其他成分。作為硬化性化合物以外的其他成分,其含義與所述含有銅化合物的組成物中所說明者相同。 The curable composition may contain other components than the curable compound. The other components other than the curable compound have the same meanings as those described for the composition containing the copper compound.

另外,硬化性組成物較佳為實質上不含銅化合物。尤其,相對於硬化性組成物的總固體成分,硬化性組成物中所含有的銅化合物的含量較佳為5質量%以下,更佳為2質量%以下,進而更佳為1質量%以下。 Further, the curable composition preferably contains substantially no copper compound. In particular, the content of the copper compound contained in the curable composition is preferably 5% by mass or less, more preferably 2% by mass or less, and still more preferably 1% by mass or less based on the total solid content of the curable composition.

硬化性組成物的黏度較佳為1mPa.s~3000mPa.s,更佳 為1mPa.s~2000mPa.s,進而佳為1mPa.s~30mPa.s,進而更佳為10mPa.s~20mPa.s。 The viscosity of the curable composition is preferably 1 mPa. s~3000mPa. s, better Is 1mPa. s~2000mPa. s, and then preferably 1mPa. s~30mPa. s, and more preferably 10mPa. s~20mPa. s.

相對於組成物,硬化性組成物的總固體成分較佳為1質量%~50質量%,更佳為1質量%~30質量%,進而更佳為10質量%~30質量%。 The total solid content of the curable composition is preferably from 1% by mass to 50% by mass, more preferably from 1% by mass to 30% by mass, even more preferably from 10% by mass to 30% by mass, based on the composition.

本發明是一種抑制所述含有銅化合物及硬化性化合物的膜形成用組成物的增黏的方法,其特徵在於包括:於使用膜形成用組成物前3日以內,將所述含有銅化合物的組成物與所述硬化性組成物混合。 The present invention provides a method for inhibiting the adhesion of a composition for forming a film containing a copper compound and a curable compound, which comprises: containing the copper compound within 3 days before the film forming composition is used. The composition is mixed with the curable composition.

另外,本發明是一種套組,其用於製造所述含有銅化合物及硬化性化合物的膜形成用組成物,其特徵在於包括:所述含有銅化合物的組成物與所述硬化性組成物。 Moreover, the present invention is a kit for producing the film-forming composition containing the copper compound and the curable compound, and the composition comprising the copper compound and the curable composition.

本發明的用於製造膜形成用組成物的套組的保管溫度較佳為40℃以下,更佳為30℃以下,進而佳為25℃以下,進而更佳為15℃以下,特佳為10℃以下。藉由設為此種保管溫度,而可更有效地抑制將套組中所含有的含有銅化合物的組成物及硬化性組成物混合時的增黏。 The storage temperature of the kit for producing a film-forming composition of the present invention is preferably 40 ° C or lower, more preferably 30 ° C or lower, further preferably 25 ° C or lower, more preferably 15 ° C or lower, and particularly preferably 10 Below °C. By setting such a storage temperature, it is possible to more effectively suppress the increase in viscosity when the composition containing the copper compound contained in the kit and the curable composition are mixed.

藉由本發明的製造方法所獲得的含有銅化合物的膜較佳為近紅外線截止濾光片。 The film containing a copper compound obtained by the production method of the present invention is preferably a near-infrared cut filter.

近紅外線截止濾光片較佳為透光率滿足以下的(1)~(9)中的至少1個條件,更佳為透光率滿足以下的(1)~(8)的所有條件,進而更佳為透光率滿足(1)~(9)的所有條件。 The near-infrared cut filter preferably has at least one of the following (1) to (9), and more preferably the light transmittance satisfies all of the following conditions (1) to (8), and further More preferably, the light transmittance satisfies all the conditions of (1) to (9).

(1)波長400nm中的透光率較佳為80%以上,更佳為90%以上,進而更佳為92%以上,特佳為95%以上。 (1) The light transmittance at a wavelength of 400 nm is preferably 80% or more, more preferably 90% or more, still more preferably 92% or more, and particularly preferably 95% or more.

(2)波長450nm中的透光率較佳為80%以上,更佳為90%以上,進而更佳為92%以上,特佳為95%以上。 (2) The light transmittance at a wavelength of 450 nm is preferably 80% or more, more preferably 90% or more, still more preferably 92% or more, and particularly preferably 95% or more.

(3)波長500nm中的透光率較佳為80%以上,更佳為90%以上,進而更佳為92%以上,特佳為95%以上。 (3) The light transmittance at a wavelength of 500 nm is preferably 80% or more, more preferably 90% or more, still more preferably 92% or more, and particularly preferably 95% or more.

(4)波長550nm中的透光率較佳為80%以上,更佳為90%以上,進而更佳為92%以上,特佳為95%以上。 (4) The light transmittance at a wavelength of 550 nm is preferably 80% or more, more preferably 90% or more, still more preferably 92% or more, and particularly preferably 95% or more.

(5)波長700nm中的透光率較佳為20%以下,更佳為15%以下,進而更佳為10%以下,特佳為5%以下。 (5) The light transmittance at a wavelength of 700 nm is preferably 20% or less, more preferably 15% or less, still more preferably 10% or less, and particularly preferably 5% or less.

(6)波長750nm中的透光率較佳為20%以下,更佳為15%以下,進而更佳為10%以下,特佳為5%以下。 (6) The light transmittance at a wavelength of 750 nm is preferably 20% or less, more preferably 15% or less, still more preferably 10% or less, and particularly preferably 5% or less.

(7)波長800nm中的透光率較佳為20%以下,更佳為15%以下,進而更佳為10%以下,特佳為5%以下。 (7) The light transmittance at a wavelength of 800 nm is preferably 20% or less, more preferably 15% or less, still more preferably 10% or less, and particularly preferably 5% or less.

(8)波長850nm中的透光率較佳為20%以下,更佳為15%以下,進而更佳為10%以下,特佳為5%以下。 (8) The light transmittance at a wavelength of 850 nm is preferably 20% or less, more preferably 15% or less, still more preferably 10% or less, and particularly preferably 5% or less.

(9)波長900nm中的透光率較佳為20%以下,更佳為15%以下,進而更佳為10%以下,特佳為5%以下。 (9) The light transmittance at a wavelength of 900 nm is preferably 20% or less, more preferably 15% or less, still more preferably 10% or less, and particularly preferably 5% or less.

近紅外線截止濾光片的膜厚較佳為500μm以下,更佳為300μm以下,進而更佳為250μm以下,特佳為200μm以下。另外,膜厚較佳為1μm以上,更佳為20μm以上,進而更佳為50μm以上,特佳為100μm以上。尤其,膜厚較佳為1μm~500μm,更 佳為1μm~300μm,進而更佳為1μm~200μm。於本發明中,即便於製成此種薄膜的情況下,亦可維持高近紅外線遮光性。 The film thickness of the near-infrared cut filter is preferably 500 μm or less, more preferably 300 μm or less, still more preferably 250 μm or less, and particularly preferably 200 μm or less. Further, the film thickness is preferably 1 μm or more, more preferably 20 μm or more, still more preferably 50 μm or more, and particularly preferably 100 μm or more. In particular, the film thickness is preferably from 1 μm to 500 μm, more It is preferably 1 μm to 300 μm, and more preferably 1 μm to 200 μm. In the present invention, even in the case of producing such a film, high near-infrared light shielding properties can be maintained.

另外,於將近紅外線截止濾光片在85℃/相對濕度85%的高溫高濕下放置1小時前後,由下述式所求出的吸光度比的變化率分別較佳為7%以下,更佳為4%以下,進而更佳為2%以下。 In addition, the rate of change in the absorbance ratio obtained by the following formula is preferably 7% or less, preferably more preferably, before the near-infrared cut filter is left at a high temperature and high humidity of 85 ° C / 85% relative humidity for 1 hour. It is 4% or less, and more preferably 2% or less.

吸光度比的變化率(%)=[(試驗前的吸光度比-試驗後的吸光度比)/試驗前的吸光度比]×100(%) Rate of change in absorbance ratio (%) = [(absorbance ratio before test - absorbance ratio after test) / absorbance ratio before test] × 100 (%)

此處,所謂吸光度比,是指(波長700nm~1400nm中的最大吸光度/波長400nm~700nm中的最少吸光度)。 Here, the absorbance ratio means (the maximum absorbance at a wavelength of 700 nm to 1400 nm / the minimum absorbance at a wavelength of 400 nm to 700 nm).

近紅外線截止濾光片於200℃下加熱5分鐘前後的波長400nm的吸光度的變化率、及波長800nm的吸光度的變化率較佳為均為7%以下,特佳為均為5%以下。 The rate of change in absorbance at a wavelength of 400 nm and the rate of change in absorbance at a wavelength of 800 nm before and after heating at 200 ° C for 5 minutes in the near-infrared cut filter are preferably 7% or less, and particularly preferably 5% or less.

<相機模組、相機模組的製造方法> <Manufacturing method of camera module and camera module>

另外,本發明是一種具有固體攝像元件與配置於所述固體攝像元件的光接收側的近紅外線截止濾光片的相機模組,近紅外線截止濾光片為所述近紅外線截止濾光片的相機模組亦較佳。 Further, the present invention is a camera module having a solid-state imaging element and a near-infrared cut filter disposed on a light receiving side of the solid-state imaging element, wherein the near-infrared cut filter is the near-infrared cut filter The camera module is also preferred.

以下,一面參照圖2及圖3一面對相機模組進行說明,但本發明並不由以下的具體例限定。 Hereinafter, the camera module will be described with reference to FIGS. 2 and 3, but the present invention is not limited by the following specific examples.

再者,於圖2及圖3中,對相同的部分標註相同的符號。 In addition, in FIGS. 2 and 3, the same portions are denoted by the same reference numerals.

另外,於說明時,「上」、「上方」及「上側」是指遠離矽基板 10之側,「下」、「下方」及「下側」是指靠近矽基板10之側。 In addition, in the description, "upper", "upper" and "upper side" mean away from the 矽 substrate. On the side of 10, "lower", "lower" and "lower side" refer to the side close to the base substrate 10.

圖2是表示具備固體攝像元件的相機模組的構成的概略剖面圖。 2 is a schematic cross-sectional view showing a configuration of a camera module including a solid-state image sensor.

圖2中所示的相機模組200經由作為連接構件的焊球60而連接於作為安裝基板的電路基板70。 The camera module 200 shown in FIG. 2 is connected to the circuit board 70 as a mounting substrate via a solder ball 60 as a connecting member.

詳細而言,相機模組200包括:固體攝像元件(固體攝像元件基板)100,於矽基板的第1主面上具備光二極體;平坦化層(圖2中未圖示),設置於固體攝像元件100的第1主面側(光接收側);近紅外線截止濾光片42,設置於平坦化層上;鏡頭架50,配置於近紅外線截止濾光片42的上方且於內部空間具有攝像鏡頭40;以及遮光兼電磁罩44,以包圍固體攝像元件100及玻璃基板30的周圍的方式配置。再者,亦可於平坦化層上設置玻璃基板30(透光性基板)。各構件藉由黏著劑45來黏著。 Specifically, the camera module 200 includes a solid-state imaging device (solid-state imaging device substrate) 100, and includes a photodiode on the first main surface of the substrate, and a planarization layer (not shown in FIG. 2). The first main surface side (light receiving side) of the image sensor 100; the near-infrared cut filter 42 is provided on the flattening layer; and the lens frame 50 is disposed above the near-infrared cut filter 42 and has an internal space The imaging lens 40 and the light shielding and electromagnetic cover 44 are disposed to surround the solid image sensor 100 and the periphery of the glass substrate 30. Further, a glass substrate 30 (translucent substrate) may be provided on the planarization layer. Each member is adhered by an adhesive 45.

本發明是一種具有固體攝像元件100與配置於所述固體攝像元件的光接收側的近紅外線截止濾光片42的相機模組的製造方法,較佳為具有於固體攝像元件的光接收側應用所述膜形成用組成物,藉此形成近紅外線截止濾光片42的步驟。於本實施形態的相機模組中,例如藉由將膜形成用組成物塗佈於平坦化層上來形成膜,而可形成近紅外線截止濾光片42。塗佈膜形成用組成物的方法如上所述。 The present invention is a method of manufacturing a camera module including a solid-state imaging device 100 and a near-infrared cut filter 42 disposed on a light receiving side of the solid-state imaging device, and preferably has a light receiving side application to a solid-state imaging device. The film forming composition, whereby the near-infrared cut filter 42 is formed. In the camera module of the present embodiment, for example, a film forming composition is applied onto a flattening layer to form a film, and a near-infrared cut filter 42 can be formed. The method of coating the film formation composition is as described above.

於相機模組200中,來自外部的入射光hv依次透過攝像鏡頭40、近紅外線截止濾光片42、玻璃基板30、平坦化層後,到達固 體攝像元件100的攝像元件部。 In the camera module 200, the incident light hv from the outside passes through the imaging lens 40, the near-infrared cut filter 42, the glass substrate 30, and the planarization layer in order to reach the solid state. The imaging element portion of the volume imaging element 100.

相機模組200於平坦化層上直接設置近紅外線截止濾光片,但可省略平坦化層而於微透鏡上直接設置近紅外線截止濾光片,亦可於玻璃基板30上設置近紅外線截止濾光片、或使設置有近紅外線截止濾光片的玻璃基板30貼合。 The camera module 200 directly sets the near-infrared cut filter on the flattening layer, but the flattening layer may be omitted and the near-infrared cut filter may be directly disposed on the microlens, and the near-infrared cut filter may be disposed on the glass substrate 30. The light sheet or the glass substrate 30 provided with the near-infrared cut filter is bonded.

圖3是將圖2中的固體攝像元件100放大的剖面圖。 FIG. 3 is an enlarged cross-sectional view showing the solid-state imaging device 100 of FIG. 2.

固體攝像元件100於作為基體的矽基板10的第1主面上依次具備攝像元件部12、層間絕緣膜13、基底層14、彩色濾光片15、保護層16、微透鏡17。以對應於攝像元件部12的方式,分別配置有紅色的彩色濾光片15R、綠色的彩色濾光片15G、藍色的彩色濾光片15B(以下,有時將該些總稱為「彩色濾光片15」)及微透鏡17。在矽基板10的與第1主面為相反側的第2主面上具備遮光膜18、絕緣膜22、金屬電極23、阻焊劑層24、內部電極26、及元件表面電極27。各構件藉由黏著劑20來黏著。 The solid-state imaging device 100 includes an imaging element portion 12, an interlayer insulating film 13, an underlayer 14, a color filter 15, a protective layer 16, and a microlens 17 in this order on the first main surface of the substrate 10 as a substrate. The red color filter 15R, the green color filter 15G, and the blue color filter 15B are disposed so as to correspond to the imaging element unit 12 (hereinafter, these may be collectively referred to as "color filters". Light sheet 15") and microlens 17. The light shielding film 18, the insulating film 22, the metal electrode 23, the solder resist layer 24, the internal electrode 26, and the element surface electrode 27 are provided on the second main surface of the ruthenium substrate 10 opposite to the first main surface. Each member is adhered by an adhesive 20.

於微透鏡17上具備平坦化層46、近紅外線截止濾光片42。亦可為如下的形態:於微透鏡17上,在基底層14與彩色濾光片15之間、或彩色濾光片15與保護層16之間設置近紅外線截止濾光片來代替於平坦化層46上設置近紅外線截止濾光片42。尤其,較佳為設置於自微透鏡17表面起2mm以內(更佳為1mm以內)的位置上。若設置於該位置上,則可簡化形成近紅外線截止濾光片的步驟,可充分地截止朝向微透鏡的不需要的近紅外線,因此可進一步提高近紅外線遮斷性。 The microlens 17 is provided with a planarization layer 46 and a near-infrared cut filter 42. Alternatively, a near-infrared cut filter may be provided on the microlens 17 between the base layer 14 and the color filter 15, or between the color filter 15 and the protective layer 16 instead of planarization. A near-infrared cut filter 42 is disposed on the layer 46. In particular, it is preferably provided at a position within 2 mm (more preferably within 1 mm) from the surface of the microlens 17. When it is provided at this position, the step of forming the near-infrared cut filter can be simplified, and the unnecessary near-infrared rays directed to the microlens can be sufficiently cut off, so that the near-infrared ray-off property can be further improved.

關於固體攝像元件100,可參考日本專利特開2012-068418號公報段落0245(相對應的美國專利申請公開第2012/068292號說明書的[0407])以後的說明,該些的內容可被編入至本申請案說明書中。 For the solid-state imaging device 100, reference may be made to the following description of the Japanese Patent Application Laid-Open No. Hei. No. 2012-068418, the entire disclosure of which is incorporated by reference. In the specification of the present application.

近紅外線截止濾光片可供於回流焊步驟。藉由回流焊步驟來製造相機模組,藉此可實現需要進行焊接的電子零件安裝基板等的自動安裝化,與不使用回流焊步驟的情況相比,可格外地提昇生產性。進而,由於可自動地進行,因此亦可謀求低成本化。當被供於回流焊步驟時,由於會暴露於250℃~270℃左右的溫度下,因此紅外線截止濾光片較佳為具有經得起回流焊步驟的耐熱性(以下,亦稱為「耐回流焊性」)。 A near-infrared cut filter is available for the reflow step. By manufacturing the camera module by the reflow process, it is possible to automatically mount the electronic component mounting substrate or the like that needs to be soldered, and it is possible to particularly improve productivity without using a reflow soldering step. Further, since it can be automatically performed, it is also possible to reduce the cost. When it is supplied to the reflow step, since it is exposed to a temperature of about 250 ° C to 270 ° C, the infrared cut filter preferably has heat resistance that can withstand the reflow step (hereinafter, also referred to as "resistance Reflowability").

於本申請案說明書中,所謂「具有耐回流焊性」,是指於200℃下進行10分鐘加熱的前後保持作為紅外線截止濾光片的特性。更佳為於230℃下進行10分鐘加熱的前後保持特性。進而更佳為於250℃下進行3分鐘加熱的前後保持特性。當不具有耐回流焊性時,於以所述條件進行保持的情況下,存在近紅外線截止濾光片的近紅外線吸收性能下降、或作為膜的功能變得不充分的情況。 In the specification of the present application, the term "having reflow resistance" means maintaining the characteristics as an infrared cut filter before and after heating at 200 ° C for 10 minutes. More preferably, the characteristics are maintained before and after heating at 230 ° C for 10 minutes. Furthermore, it is more preferable to maintain the characteristics before and after heating at 250 ° C for 3 minutes. When the reflow resistance is not maintained, when the film is held under the above-described conditions, the near-infrared ray absorbing performance of the near-infrared cut filter may be lowered or the function as a film may be insufficient.

另外,本發明亦有關於一種包括進行回流處理的步驟的相機模組的製造方法。近紅外線截止濾光片即便具有回流步驟,亦維持近紅外線吸收性能,因此不會損害經小型輕量.高性能化的相機模組的特性。 Further, the present invention relates to a method of manufacturing a camera module including the step of performing a reflow process. The near-infrared cut filter maintains the near-infrared absorption performance even if it has a reflow step, so it does not impair the small size and light weight. Features of a high-performance camera module.

圖4~圖6是表示相機模組中的近紅外線截止濾光片周邊部 分的一例的概略剖面圖。 4 to 6 show the peripheral portion of the near-infrared cut filter in the camera module. A schematic cross-sectional view of an example of a minute.

如圖4所示,相機模組可依次具有固體攝像元件100、平坦化層46、紫外.紅外光反射膜80、透明基材81、近紅外線吸收層82、以及抗反射層83。 As shown in FIG. 4, the camera module may have a solid-state imaging element 100, a planarization layer 46, and ultraviolet light in sequence. The infrared light reflecting film 80, the transparent substrate 81, the near infrared absorbing layer 82, and the antireflection layer 83.

紫外.紅外光反射膜80具有賦予或提高近紅外線截止濾光片的功能的效果,例如可參考日本專利特開2013-68688號公報的段落0033~段落0039,其內容可被編入至本申請案說明書中。 UV. The infrared light reflecting film 80 has an effect of imparting or improving the function of the near-infrared cut filter, and for example, refer to paragraphs 0033 to 0039 of Japanese Patent Laid-Open Publication No. 2013-68688, the contents of which can be incorporated in the specification of the present application. .

透明基材81是使可見區域的波長的光透過者,例如可參考日本專利特開2013-68688號公報的段落0026~段落0032,其內容可被編入至本申請案說明書中。 The transparent substrate 81 is a light that transmits the wavelength of the visible region. For example, reference is made to paragraph 0026 to paragraph 0032 of JP-A-2013-68688, the contents of which are incorporated herein by reference.

近紅外線吸收層82是塗佈所述本發明的近紅外線吸收性組成物所形成的層。 The near-infrared ray absorbing layer 82 is a layer formed by applying the near-infrared absorbing composition of the present invention.

抗反射層83是具有如下功能的層,即藉由防止入射至近紅外線截止濾光片中的光的反射來提昇透過率,並高效地利用入射光,例如可參考日本專利特開2013-68688號公報的段落0040,其內容可被編入至本申請案說明書中。 The anti-reflection layer 83 is a layer having a function of increasing the transmittance by preventing reflection of light incident into the near-infrared cut filter, and efficiently utilizing incident light, for example, refer to Japanese Patent Laid-Open Publication No. 2013-68688 Paragraph 0040 of the Gazette, the contents of which can be incorporated into the specification of the present application.

如圖5所示,相機模組可依次具有固體攝像元件100、近紅外線吸收層82、抗反射層83、平坦化層46、抗反射層83、透明基材81、以及紫外.紅外光反射膜80。 As shown in FIG. 5, the camera module may sequentially have a solid-state imaging element 100, a near-infrared absorbing layer 82, an anti-reflection layer 83, a planarization layer 46, an anti-reflection layer 83, a transparent substrate 81, and ultraviolet light. Infrared light reflecting film 80.

如圖6所示,相機模組可依次具有固體攝像元件100、近紅外線吸收層82、紫外.紅外光反射膜80、平坦化層46、抗反射層83、透明基材81、以及抗反射層83。 As shown in FIG. 6, the camera module may have a solid-state imaging element 100, a near-infrared absorbing layer 82, and an ultraviolet ray in sequence. The infrared light reflecting film 80, the planarizing layer 46, the antireflection layer 83, the transparent substrate 81, and the antireflection layer 83.

以上,參照圖2~圖6對相機模組的一實施形態進行了說明,但所述一實施形態並不限定於圖2~圖6的形態。 Although an embodiment of the camera module has been described above with reference to FIGS. 2 to 6, the above-described embodiment is not limited to the embodiment of FIGS. 2 to 6.

[實施例] [Examples]

以下列舉實施例來更具體地說明本發明。只要不脫離本發明的主旨,則以下的實施例中所示的材料、使用量、比例、處理內容、處理程序等可適宜變更。因此,本發明的範圍並不限定於以下所示的具體例。 The invention will be more specifically described below by way of examples. The materials, the amounts used, the ratios, the processing contents, the processing procedures, and the like shown in the following examples can be appropriately changed without departing from the gist of the invention. Therefore, the scope of the present invention is not limited to the specific examples shown below.

<銅化合物> <copper compound>

<<具有配位部位的聚合體(A1)的合成>> <<Synthesis of Polymer (A1) with Coordination Site>>

<<<聚合體A-1的合成>>> <<<Synthesis of Polymer A-1>>>

使聚醚碸(巴斯夫公司製造,烏特拉森(Ultrason)E6020P)5.0g溶解於硫酸46g中,於氮氣氣流下,且於室溫下滴加氯磺酸16.83g。於室溫下進行48小時反應後,將反應液滴加至利用冰水進行了冷卻的己烷/乙酸乙酯(1/1)混合液1L中。將上清液去除,使所獲得的沈澱物溶解於甲醇中。將所獲得的溶液滴加至乙酸乙酯0.5L中,並藉由過濾來回收所獲得的沈澱物。對所獲得的固體進行減壓乾燥,藉此獲得4.9g的聚合體A-1。藉由中和滴定來算出聚合物中的磺酸基含量(meq/g)。藉由凝膠滲透層析法來測定重量平均分子量(Mw)。 5.0 g of polyether oxime (manufactured by BASF Corporation, Ultrason E6020P) was dissolved in 46 g of sulfuric acid, and 16.83 g of chlorosulfonic acid was added dropwise at room temperature under a nitrogen stream. After reacting for 48 hours at room temperature, the reaction liquid was added to 1 L of a hexane/ethyl acetate (1/1) mixture which was cooled with ice water. The supernatant was removed, and the obtained precipitate was dissolved in methanol. The obtained solution was added dropwise to 0.5 L of ethyl acetate, and the obtained precipitate was recovered by filtration. The obtained solid was dried under reduced pressure, whereby 4.9 g of polymer A-1 was obtained. The sulfonic acid group content (meq/g) in the polymer was calculated by neutralization titration. The weight average molecular weight (Mw) was determined by gel permeation chromatography.

[化31] [化31]

<<聚合體A-2的合成>> <<Synthesis of Polymer A-2>>

將氯磺酸的量變更成25.1g,並將反應溫度及時間變更成70℃、7小時,除此以外,以與聚合體A-1的合成相同的方式獲得聚合體A-2。 Polymer A-2 was obtained in the same manner as in the synthesis of polymer A-1 except that the amount of chlorosulfonic acid was changed to 25.1 g, and the reaction temperature and time were changed to 70 ° C for 7 hours.

<<聚合體A-3的合成>> <<Synthesis of Polymer A-3>>

將氯磺酸變更成30%發煙硫酸14.4g,並將反應時間變更成8小時,除此以外,以與聚合體A-1的合成相同的方式獲得聚合體A-3。 The polymer A-3 was obtained in the same manner as in the synthesis of the polymer A-1 except that the chlorosulfonic acid was changed to 14.4 g of 30% fuming sulfuric acid and the reaction time was changed to 8 hours.

<<聚合體A-4的合成>> <<Synthesis of Polymer A-4>>

使聚碸(奧德里奇(Aldrich)公司製造)8.0g溶解於氯仿92.0g中,於氮氣氣流下,並於室溫下滴加氯磺酸8.43g。於室溫下進行1小時反應後,固體析出。將上清液去除,利用氯仿對所獲得的固體進行清洗後,溶解於甲醇中。將該溶液滴加至乙酸乙酯0.5L中,藉由過濾來回收所獲得的沈澱。對所獲得的固體進行減壓乾燥,藉此獲得8.3g的聚合體A-4。 8.0 g of polyfluorene (manufactured by Aldrich Co., Ltd.) was dissolved in 92.0 g of chloroform, and 8.43 g of chlorosulfonic acid was added dropwise at room temperature under a nitrogen stream. After the reaction was carried out for 1 hour at room temperature, a solid precipitated. The supernatant was removed, and the obtained solid was washed with chloroform and dissolved in methanol. This solution was added dropwise to 0.5 L of ethyl acetate, and the obtained precipitate was recovered by filtration. The obtained solid was dried under reduced pressure, whereby 8.3 g of polymer A-4 was obtained.

<<聚合體A-5的合成>> <<Synthesis of Polymer A-5>>

向具備迪安-斯塔克(Dean-Stark)管的三口燒瓶中添加六氟雙酚A 3.42g、二苯基碸-4,4'-二氯-3,3'-二磺酸二鈉5.00g、碳酸鉀1.69g、甲苯10g、N-甲基吡咯啶酮25g,於氮氣氣流下進行4小時回流。將系統內的甲苯去除後,昇溫至180℃,並攪拌15小時。使反應液恢復成室溫後,利用鋪滿矽藻土的桐山漏斗對反應液進行過濾,然後將濾液滴加至300ml的飽和食鹽水中。對所獲得的沈澱進行過濾,溶解於甲醇中後,滴加至500ml的丙酮中。對所獲得的沈澱進行過濾,溶解於甲醇中後,藉由Amberlyst15 (氫泡沫)(奧德里奇公司製造)來鹽交換成質子型,藉此獲得6.4g的聚合體A-5。 Add hexafluorobisphenol A 3.42 g, diphenyl sulfonium-4,4'-dichloro-3,3'-disulfonic acid disodium to a three-necked flask equipped with a Dean-Stark tube. 5.00 g, 1.69 g of potassium carbonate, 10 g of toluene, and 25 g of N-methylpyrrolidone were refluxed under a nitrogen stream for 4 hours. After the toluene in the system was removed, the temperature was raised to 180 ° C and stirred for 15 hours. After the reaction solution was returned to room temperature, the reaction solution was filtered through a Kiriyama funnel covered with diatomaceous earth, and the filtrate was added dropwise to 300 ml of saturated brine. The obtained precipitate was filtered, dissolved in methanol, and added dropwise to 500 ml of acetone. The obtained precipitate was filtered and dissolved in methanol with Amberlyst 15 (Hydrogen foam) (manufactured by Aldrich Co., Ltd.) was salt-exchanged into a proton type, whereby 6.4 g of the polymer A-5 was obtained.

<<聚合體A-6的合成>> <<Synthesis of Polymer A-6>>

將六氟雙酚A 3.42g變更成對苯二酚1.12g,除此以外,以與聚合體A-5的合成相同的方式獲得3.9g的聚合體A-6。 3.9 g of the polymer A-6 was obtained in the same manner as in the synthesis of the polymer A-5 except that 3.42 g of hexafluorobisphenol A was changed to 1.22 g of hydroquinone.

<<聚合體A-7的合成>> <<Synthesis of Polymer A-7>>

向具備迪安-斯塔克管的三口燒瓶中添加雙酚酸4.66g、二苯基碸-4,4'-二氯-3,3'-二磺酸二鈉8.00g、碳酸鉀2.48g、甲苯10g、N-甲基吡咯啶酮25g,於氮氣氣流下進行4小時回流。將系統內的甲苯去除後,昇溫至180℃,並攪拌15小時。使反應液恢復成室溫後,利用鋪滿矽藻土的桐山漏斗對反應液進行過濾,然後將 濾液滴加至300ml的飽和食鹽水中。對所獲得的沈澱進行過濾,溶解於甲醇中後,滴加至500ml的丙酮中。對所獲得的沈澱進行過濾,並進行減壓乾燥。 To a three-necked flask equipped with a Dean-Stark tube, 4.66 g of bisphenolic acid, 8.00 g of diphenylsulfonium-4,4'-dichloro-3,3'-disulfonic acid, and 2.48 g of potassium carbonate were added. 10 g of toluene and 25 g of N-methylpyrrolidone were refluxed under a nitrogen stream for 4 hours. After the toluene in the system was removed, the temperature was raised to 180 ° C and stirred for 15 hours. After the reaction solution was returned to room temperature, the reaction solution was filtered using a Kiriyama funnel covered with diatomaceous earth, and then The filtrate was added to 300 ml of saturated brine. The obtained precipitate was filtered, dissolved in methanol, and added dropwise to 500 ml of acetone. The obtained precipitate was filtered and dried under reduced pressure.

使經乾燥的聚合物溶解於硫酸73.6g中,並滴加氯磺酸4.56g。於室溫下進行6小時反應後,將反應液滴加至利用冰水進行了冷卻的己烷/乙酸乙酯(1/1)混合液1.5L中。將上清液去除,使所獲得的沈澱物溶解於甲醇中。將所獲得的溶液滴加至乙酸乙酯0.5L中,並藉由過濾來回收所獲得的沈澱物。對所獲得的固體進行減壓乾燥,藉此獲得7.5g的聚合體A-7。 The dried polymer was dissolved in 73.6 g of sulfuric acid, and 4.56 g of chlorosulfonic acid was added dropwise. After reacting for 6 hours at room temperature, the reaction liquid was added dropwise to 1.5 L of a hexane/ethyl acetate (1/1) mixture which was cooled with ice water. The supernatant was removed, and the obtained precipitate was dissolved in methanol. The obtained solution was added dropwise to 0.5 L of ethyl acetate, and the obtained precipitate was recovered by filtration. The obtained solid was dried under reduced pressure, whereby 7.5 g of polymer A-7 was obtained.

<<聚合體A-8的合成>> <<Synthesis of Polymer A-8>>

向具備迪安-斯塔克管的三口燒瓶中添加4,4'-聯苯酚3.53g、二苯甲酮-4,4'-二氟-3,3'-二磺酸二鈉8.00g、碳酸鉀3.14g、甲苯10g、二甲基亞碸30g,於氮氣氣流下進行4小時回流。將系統內的甲苯去除後,昇溫至170℃,並攪拌15小時。使反應液恢復成室溫後,利用鋪滿矽藻土的桐山漏斗對反應液進行過濾,然後將濾液滴加至500ml的飽和食鹽水中。對所獲得的沈澱進行過 濾,溶解於甲醇中後,滴加至800ml的丙酮中。對所獲得的沈澱進行過濾,溶解於甲醇中後,藉由Amberlyst15(氫泡沫)(奧德里奇公司製造)來鹽交換成質子型,藉此獲得7.2g的聚合體A-8。 To a three-necked flask equipped with a Dean-Stark tube, 3.53 g of 4,4'-biphenol and 8.00 g of benzophenone-4,4'-difluoro-3,3'-disulfonic acid disodium were added. 3.14 g of potassium carbonate, 10 g of toluene, and 30 g of dimethyl hydrazine were refluxed under a nitrogen gas stream for 4 hours. After the toluene in the system was removed, the temperature was raised to 170 ° C and stirred for 15 hours. After the reaction solution was returned to room temperature, the reaction solution was filtered through a Kiriyama funnel covered with diatomaceous earth, and then the filtrate was added dropwise to 500 ml of saturated brine. Have done the precipitation obtained After filtration, it was dissolved in methanol and added dropwise to 800 ml of acetone. The obtained precipitate was filtered, dissolved in methanol, and then subjected to salt exchange to a proton type by Amberlyst 15 (hydrogen foam) (manufactured by Aldrich Co., Ltd.), whereby 7.2 g of polymer A-8 was obtained.

<<聚合體A-9的合成>> <<Synthesis of Polymer A-9>>

依據「膜科學雜誌(J.Membr.Sci.)」229、2004、95~中所記載的方法,進行聚醚醚酮的磺化,藉此獲得聚合體A-9。 Sulfonation of polyetheretherketone is carried out according to the method described in J. Membr. Sci., 229, 2004, 95~, whereby polymer A-9 is obtained.

<<聚合體A-10的合成>> <<Synthesis of Polymer A-10>>

依據「聚合物科學雜誌(中國)(Chinese J.Polym.Sci.)」20、No.1、2002、53~中所記載的方法,進行聚苯醚(polyphenylene oxide)的磺化,藉此獲得聚合體A-10。 Sulfonation of polyphenylene oxide is carried out according to the method described in "Chinese J. Polym. Sci." 20, No. 1, 2002, 53~, thereby obtaining Polymer A-10.

<<聚合體A-11的合成>> <<Synthesis of Polymer A-11>>

依據日本專利特表2008-533225號公報的實施例2中所記載的方法,獲得聚合體A-11。 Polymer A-11 was obtained according to the method described in Example 2 of JP-A-2008-533225.

<<聚合體A-12的合成>> <<Synthesis of Polymer A-12>>

依據日本專利特開2004-131662號公報中所記載的方法,進行聚碸的磺甲基化,藉此獲得聚合體A-12。 The polymer A-12 is obtained by performing sulfomethylation of polyfluorene according to the method described in JP-A-2004-131662.

<<聚合體A-13的合成>> <<Synthesis of Polymer A-13>>

依據日本專利特開2008-27890號公報中所記載的方法,獲得聚合體A-13。 Polymer A-13 was obtained according to the method described in JP-A-2008-27890.

<<聚合體A-14的合成>> <<Synthesis of Polymer A-14>>

向三口燒瓶中添加4,4'-二胺基聯苯-2,2'-二磺酸6.89g、120ml的間甲酚、4.86g的三乙胺,於氮氣氣流下進行攪拌至溶液變得均勻為止。向該溶液中添加4,4'-氧基二鄰苯二甲酸6.20g與苯甲酸6.84g,於80℃下進行4小時反應,繼而於180℃下進行20小時反應。使反應溫度恢復成室溫後,將反應液滴加至丙酮中。對所獲得的沈澱進行過濾,溶解於甲醇中後,藉由Amberlyst15(氫泡沫)(奧德里奇公司製造)來鹽交換成質子型,藉此獲得9.2g的聚合體A-14。 To the three-necked flask, 6.89 g of 4,4'-diaminobiphenyl-2,2'-disulfonic acid, 120 ml of m-cresol, and 4.86 g of triethylamine were added, and the mixture was stirred under a nitrogen gas stream until the solution became Evenly. To the solution, 6.20 g of 4,4'-oxydiphthalic acid and 6.84 g of benzoic acid were added, and the reaction was carried out at 80 ° C for 4 hours, followed by reaction at 180 ° C for 20 hours. After the reaction temperature was returned to room temperature, the reaction liquid was added to acetone. The obtained precipitate was filtered, dissolved in methanol, and then subjected to salt exchange to a proton type by Amberlyst 15 (hydrogen foam) (Aldrich), whereby 9.2 g of the polymer A-14 was obtained.

<<聚合體A-15的合成>> <<Synthesis of Polymer A-15>>

依據「膜科學雜誌」360、2010、26~中所記載的方法,進行聚碸的膦醯甲基化,藉此獲得聚合體A-15。 According to the method described in Journal of Membrane Science 360, 2010, and 26~, polyphosphonium phosphine is methylated to obtain a polymer A-15.

<<銅錯合物Cu-1的合成>> <<Synthesis of copper complex Cu-1>>

相對於聚合體A-1的20%水溶液20g,添加氫氧化銅556mg,並於室溫下攪拌3小時,使氫氧化銅溶解。藉由以上方式,可獲得銅錯合物(以下,亦稱為工程塑膠(Engineering Plastics)銅錯合物)Cu-1的水溶液。 556 mg of copper hydroxide was added to 20 g of a 20% aqueous solution of the polymer A-1, and the mixture was stirred at room temperature for 3 hours to dissolve copper hydroxide. By the above manner, an aqueous solution of a copper complex (hereinafter also referred to as Engineering Plastics copper complex) Cu-1 can be obtained.

<<銅錯合物Cu-2~銅錯合物Cu-15的合成>> <<Synthesis of copper complex Cu-2~ copper complex Cu-15>>

除使聚合體(A1)所含有的酸基的當量與銅原子的當量的質量比變成如下述表1般以外,以與銅錯合物Cu-1的合成相同的方式合成銅錯合物Cu-2~銅錯合物Cu-15。 The copper complex Cu was synthesized in the same manner as in the synthesis of the copper complex Cu-1 except that the mass ratio of the equivalent of the acid group contained in the polymer (A1) to the equivalent of the copper atom was changed as shown in the following Table 1. -2~ copper complex Cu-15.

<藉由包含配位部位的低分子化合物及銅成分的反應所獲得的銅錯合物> <Copper complex obtained by reaction of a low molecular compound containing a coordination site and a copper component>

<<具有磺基鄰苯二甲酸作為配位體的銅錯合物(磺基鄰苯二甲酸銅錯合物)>> <<Copper complex with sulfophthalic acid as ligand (copper sulfophthalate complex)>>

使磺基鄰苯二甲酸53.1%水溶液溶解於甲醇50mL中,將該溶液昇溫至50℃後,相對於磺基鄰苯二甲酸添加1當量的氫氧化銅,並於50℃下進行2小時反應。反應結束後,利用蒸發器將溶劑及所產生的水餾去,藉此獲得磺基鄰苯二甲酸銅錯合物。 A 53.1% aqueous solution of sulfophthalic acid was dissolved in 50 mL of methanol, and the solution was heated to 50 ° C, and then 1 equivalent of copper hydroxide was added to the sulfophthalic acid, and the reaction was carried out at 50 ° C for 2 hours. . After the completion of the reaction, the solvent and the produced water were distilled off by an evaporator, whereby a copper sulfophthalate complex was obtained.

<硬化性化合物> <hardening compound>

黏合劑A:下述化合物(Mw:24,000) Adhesive A: The following compound (Mw: 24,000)

[化46] [Chem. 46]

<界面活性劑> <Surfactant>

界面活性劑A:Olfine E1010(日信化學工業股份有限公司製造) Surfactant A: Olfine E1010 (manufactured by Nissin Chemical Industry Co., Ltd.)

<含有銅化合物的組成物> <Composition containing a copper compound>

將所述工程塑膠銅錯合物Cu-1(5.07質量份)、磺基鄰苯二甲酸銅錯合物(15.21質量份)、界面活性劑A(0.02質量份)及水79.70質量份混合,而獲得含有銅化合物的組成物。 Mixing the engineering plastic copper complex Cu-1 (5.07 parts by mass), copper sulfophthalate complex (15.21 parts by mass), surfactant A (0.02 parts by mass), and water 79.70 parts by mass, A composition containing a copper compound is obtained.

<硬化性組成物> <Sclerosing composition>

將所述黏合劑A(19.8質量份)及水80.2質量份混合,而獲得硬化性組成物。 The binder A (19.8 parts by mass) and water (80.2 parts by mass) were mixed to obtain a curable composition.

<膜形成用組成物的製備> <Preparation of a film-forming composition>

以成為下述表5中所記載的調配的方式將所述含有銅化合物的組成物及硬化性組成物混合,而製備膜形成用組成物。含有銅化合物的組成物與硬化性組成物是以2:3的質量比進行混合。 The composition containing the copper compound and the curable composition were mixed in such a manner as to be described in the following Table 5 to prepare a film-forming composition. The composition containing the copper compound and the curable composition were mixed at a mass ratio of 2:3.

再者,實驗例1的膜形成用組成物是將含有銅化合物的組成物(組成物1)及硬化性組成物(組成物4)混合而成的組成物。實驗例2的膜形成用組成物是將含有銅化合物的組成物(組成物2)及硬化性組成物(組成物5)混合而成的組成物。實驗例3的膜形成用組成物是將含有銅化合物的組成物(組成物3)及硬化性組成物(組成物6)混合而成的組成物。 In addition, the composition for film formation of Experimental Example 1 is a composition obtained by mixing a composition containing a copper compound (composition 1) and a curable composition (composition 4). The film-forming composition of Experimental Example 2 is a composition obtained by mixing a composition containing a copper compound (composition 2) and a curable composition (composition 5). The film-forming composition of Experimental Example 3 is a composition obtained by mixing a composition containing a copper compound (composition 3) and a curable composition (composition 6).

<黏度變化的評價> <Evaluation of viscosity change>

針對所述含有銅化合物的組成物、硬化性組成物及膜形成用組成物,對在10℃、25℃及40℃的條件下進行保管時的黏度的變化率進行評價。 The composition of the copper compound, the curable composition, and the film-forming composition were evaluated for the rate of change in viscosity when stored under conditions of 10° C., 25° C., and 40° C.

各組成物的黏度的測定是使用黏度計(東機產業(TOKI SANGYO)製造,RE-85L)來進行。 The viscosity of each composition was measured using a viscometer (manufactured by TOKI SANGYO, RE-85L).

膜形成用組成物的黏度的變化率是將製備膜形成用組成物後10分鐘後作為基準時間,分別測定該基準時間的膜形成用組成物的初始黏度(V0),與自該基準時間起1小時、3小時、24小時、72小時、168小時及720小時後的相同溫度下的膜形成用組成物的黏度(V1),並求出相對於初始黏度(V0)的黏度(V1)的變化率[((V1-V0)/V0)×100](%)。 The rate of change of the viscosity of the film-forming composition is the initial viscosity (V0) of the film-forming composition which is measured for 10 minutes after the preparation of the film-forming composition, and the film forming composition is measured from the reference time. The viscosity (V1) of the film-forming composition at the same temperature after 1 hour, 3 hours, 24 hours, 72 hours, 168 hours, and 720 hours, and the viscosity (V1) with respect to the initial viscosity (V0) was determined. Rate of change [((V1-V0)/V0) × 100] (%).

針對硬化性組成物及含有銅化合物的組成物,將製備各組成物後10分鐘後作為基準時間,除此以外,以與膜形成用組成物相同的方式測定黏度的變化率。將結果示於下述表5中。 The change rate of the viscosity was measured in the same manner as the composition for film formation, except that the composition for the curable composition and the composition containing the copper compound was used as the reference time 10 minutes after the preparation of each composition. The results are shown in Table 5 below.

根據表5所示的結果,可知含有銅化合物的組成物及硬化性組成物的相對於初始黏度的黏度的變化率均小。含有銅化合物的組成物的初始黏度約為2mPa.s,硬化性組成物的初始黏度約為14mPa.s。 From the results shown in Table 5, it was found that the rate of change in the viscosity of the composition containing the copper compound and the curable composition with respect to the initial viscosity was small. The initial viscosity of the composition containing the copper compound is about 2 mPa. s, the initial viscosity of the hardenable composition is about 14mPa. s.

可知實驗例1~實驗例3的膜形成用組成物與含有銅化合物的組成物及硬化性組成物相比,相對於初始黏度的黏度的變化率大,即,存在容易增黏的傾向。 It is understood that the composition for forming a film of Experimental Example 1 to Experimental Example 3 has a larger rate of change in viscosity with respect to the initial viscosity than the composition containing the copper compound and the curable composition, that is, tends to be easily thickened.

另外,可知實驗例1~實驗例3的膜形成用組成物於將含有銅化合物的組成物及硬化性組成物混合後3日以內(特別是1日以內),相對於初始黏度的黏度的變化率不怎麼變大。 In addition, it is understood that the composition for film formation of Experimental Example 1 to Experimental Example 3 has a viscosity change with respect to the initial viscosity within 3 days (particularly within 1 day) of the composition containing the copper compound and the curable composition. The rate is not so big.

另外,可知藉由在製備實驗例1~實驗例3的膜形成用組成物後至應用於基材上為止的期間內,於25℃以下進行保管,而存在 組成物的增黏得到進一步抑制的傾向。 In addition, in the period from the preparation of the film-forming composition of Experimental Example 1 to Experimental Example 3 to the application to the substrate, it was found to be stored at 25 ° C or lower, and it was found that The viscosity of the composition tends to be further suppressed.

另外,可知即便是於實驗例1~實驗例3的膜形成用組成物中,使用工程塑膠銅錯合物Cu-2~工程塑膠銅錯合物Cu-15來代替所使用的含有銅化合物的組成物中的工程塑膠銅錯合物Cu-1,除此以外,以相同方式製備的膜形成用組成物,亦獲得與實驗例1~實驗例3的膜形成用組成物相同的結果。 In addition, it was found that even in the film formation compositions of Experimental Examples 1 to 3, engineering plastic copper complex Cu-2~ engineering plastic copper complex Cu-15 was used instead of the copper compound containing copper. In the film forming composition prepared in the same manner, the same results as those of the film forming compositions of Experimental Examples 1 to 3 were obtained.

<含有銅化合物的膜(近紅外線截止濾光片)的製作> <Preparation of a film containing a copper compound (near-infrared cut filter)>

藉由滴落澆鑄(滴加法)而將實驗例1~實驗例3的膜形成用組成物分別塗佈於玻璃基板上,並於加熱板上以60℃、10分鐘,80℃、10分鐘,100℃、10分鐘,120℃、10分鐘,140℃、10分鐘階段性地進行加熱,而製作膜厚為100μm的近紅外線截止濾光片。再者,將製備膜形成用組成物後10分鐘後作為基準時間,分別使用自該基準時間起1小時、3小時、24小時、72小時、168小時及720小時後的膜形成用組成物膜來獲得近紅外線截止濾光片。 The film-forming compositions of Experimental Examples 1 to 3 were applied onto a glass substrate by dropping casting (dropping method), respectively, and placed on a hot plate at 60 ° C, 10 minutes, 80 ° C, and 10 minutes. The mixture was heated stepwise at 100 ° C, 10 minutes, 120 ° C, 10 minutes, 140 ° C, and 10 minutes to prepare a near-infrared cut filter having a film thickness of 100 μm. In addition, 10 minutes after the preparation of the film-forming composition, a film for forming a film for 1 hour, 3 hours, 24 hours, 72 hours, 168 hours, and 720 hours from the reference time was used as a reference time. To obtain a near-infrared cut filter.

可知自基準時間起1小時、3小時、24小時及72小時後的膜形成用組成物藉由在將含有銅化合物的組成物及硬化性組成物混合後3日以內應用於基材上,而可適當地製造膜(實施例)。另外,可知可進一步抑制膜的裂紋等不良。 It is understood that the film-forming composition after 1 hour, 3 hours, 24 hours, and 72 hours from the reference time is applied to the substrate within 3 days after mixing the composition containing the copper compound and the curable composition. A film (Example) can be suitably produced. Further, it is understood that defects such as cracks in the film can be further suppressed.

另一方面,於使用自基準時間起168小時及720小時後的膜形成用組成物的近紅外線截止濾光片中,確認到產生裂紋膜的裂紋等不良(比較例)。 On the other hand, in the near-infrared cut filter which used the composition for film formation after 168 hours and 720 hours from the reference time, it was confirmed that a crack such as a crack of the crack film occurred (comparative example).

另外,可知即便是於實驗例1~實驗例3的膜形成用組成物中,使用工程塑膠銅錯合物Cu-2~工程塑膠銅錯合物Cu-15來代替所使用的含有銅化合物的組成物中的工程塑膠銅錯合物Cu-1,除此以外,以相同方式獲得的近紅外線截止濾光片,亦獲得與使用實驗例1~實驗例3的膜形成用組成物的近紅外線截止濾光片相同的結果。 In addition, it was found that even in the film formation compositions of Experimental Examples 1 to 3, engineering plastic copper complex Cu-2~ engineering plastic copper complex Cu-15 was used instead of the copper compound containing copper. In the near-infrared cut filter obtained in the same manner, the near-infrared ray cut-off filter obtained in the same manner as in the composition, and the near-infrared rays using the film-forming composition of Experimental Example 1 to Experimental Example 3 were also obtained. The same result as the cutoff filter.

另外,即便於使用所述膜形成用組成物,如以下般製作近紅外線截止濾光片的情況下,亦可同樣地製作近紅外線截止濾光片。將光阻劑塗佈於玻璃基板上,藉由微影來進行圖案化而形成光阻劑的隔離壁,從而形成膜形成用組成物的滴加區域(2cm×2cm)。將各膜形成用組成物200μL滴加至滴加區域中,於40℃下乾燥1小時,進而滴加200μL並於40℃下乾燥1小時,然後於60℃下乾燥1小時。其後,藉由在室溫下放置24小時來進行乾燥。對乾燥後的塗佈膜的膜厚進行評價,結果膜厚為200μm。再者,即便將聚醯亞胺膠帶(kapton tape)用作隔離壁來製作滴加區域,亦可同樣地製作近紅外線截止濾光片。 In addition, even when the composition for forming a film is used, when a near-infrared cut filter is produced as follows, a near-infrared cut filter can be produced in the same manner. The photoresist was applied onto a glass substrate, and patterned by lithography to form a partition wall of the photoresist, thereby forming a dropping region (2 cm × 2 cm) of the film forming composition. 200 μL of each film-forming composition was dropped into the dropping region, and dried at 40° C. for 1 hour, and further 200 μL was added dropwise thereto, and dried at 40° C. for 1 hour, and then dried at 60° C. for 1 hour. Thereafter, drying was carried out by allowing to stand at room temperature for 24 hours. The film thickness of the coating film after drying was evaluated, and as a result, the film thickness was 200 μm. Further, even if a kapton tape is used as a partition wall to form a dropping region, a near-infrared cut filter can be produced in the same manner.

(實驗例10) (Experimental Example 10)

於所述實驗例1中所使用的組成物1(含有銅化合物的組成物)中,進一步追加以下所示的低分子銅錯合物A,以固體成分基準計使工程塑膠銅錯合物Cu-1與低分子銅錯合物A的比變成7:3,除此以外,以與實驗例1相同的方式獲得實驗例10的膜形成用組成物。 In the composition 1 (the composition containing a copper compound) used in the above-mentioned Experimental Example 1, the low molecular copper complex A shown below was further added, and the engineering plastic copper complex Cu was determined on the basis of the solid content. The film formation composition of Experimental Example 10 was obtained in the same manner as in Experimental Example 1, except that the ratio of -1 to the low molecular weight copper complex A was changed to 7:3.

(實驗例11~實驗例14) (Experimental Example 11 to Experimental Example 14)

於實驗例10的膜形成用組成物中,將低分子銅錯合物A分別變成低分子銅錯合物B、低分子銅錯合物C、低分子銅錯合物D或低分子銅錯合物E,除此以外,以與實驗例10相同的方式獲得實驗例11~實驗例14的膜形成用組成物。 In the film-forming composition of Experimental Example 10, the low molecular copper complex A was changed to low molecular copper complex B, low molecular copper complex C, low molecular copper complex D or low molecular copper. The film formation compositions of Experimental Examples 11 to 14 were obtained in the same manner as in Experimental Example 10 except for the above.

(實驗例15~實驗例17) (Experimental Example 15 to Experimental Example 17)

於實驗例10的膜形成用組成物中,以固體成分基準計使工程塑膠銅錯合物Cu-1與低分子銅錯合物A的比分別變成5:5、6:4、8:2,除此以外,以與實驗例10相同的方式獲得實驗例15~實驗例17的膜形成用組成物。 In the film-forming composition of Experimental Example 10, the ratio of the engineering plastic copper complex Cu-1 to the low molecular copper complex A was 5:5, 6:4, 8:2, respectively, based on the solid content. The composition for film formation of Experimental Example 15 to Experimental Example 17 was obtained in the same manner as Experimental Example 10 except the above.

可確認該些工程塑膠銅錯合物與低分子銅錯合物的混合型可達成更高的近紅外線遮蔽性。 It can be confirmed that the hybrid type of the engineering plastic copper complex and the low molecular copper complex can achieve higher near-infrared shielding properties.

(低分子銅錯合物) (low molecular copper complex)

低分子銅錯合物A:具有下述(M-1)作為配位體的銅錯合物。合成方法將後述。 Low molecular copper complex A: A copper complex having the following (M-1) as a ligand. The synthesis method will be described later.

低分子銅錯合物B:將下述化合物(A-21)作為配位體的銅錯合物。合成方法將後述。 Low molecular copper complex B: A copper complex of the following compound (A-21) as a ligand. The synthesis method will be described later.

低分子銅錯合物C:鄰苯二甲酸單丁基銅,東京化成工業股份有限公司 Low Molecular Copper Complex C: Monobutyl Copper Phthalate, Tokyo Chemical Industry Co., Ltd.

低分子銅錯合物D:將下述化合物(A2-1)作為配位體的銅錯合物。合成方法將後述。 Low molecular copper complex D: A copper complex of the following compound (A2-1) as a ligand. The synthesis method will be described later.

低分子銅錯合物E:將下述化合物(a-19)作為配位體的銅錯 合物。合成方法將後述。 Low molecular copper complex E: copper wrong with the following compound (a-19) as a ligand Compound. The synthesis method will be described later.

<低分子銅錯合物A的合成> <Synthesis of Low Molecular Copper Complex A>

於氮氣環境下,向三口燒瓶中添加吡唑-3-羧酸乙酯4.0g、碳酸銫11.16g、3-溴戊烷5.17g、2,6-二甲基-4-庚酮60mL,並於150℃下加熱1小時。冷卻至室溫後,藉由過濾來去除不溶物,將濾液濃縮後利用矽膠管柱層析法(溶劑:己烷/乙酸乙酯)對所獲得的粗產物進行精製,藉此獲得1-(3-戊基)吡唑-3-羧酸乙酯3.3g。 To a three-necked flask, 4.0 g of pyrazole-3-carboxylic acid ethyl ester, 11.16 g of cesium carbonate, 5.17 g of 3-bromopentane, and 60 mL of 2,6-dimethyl-4-heptanone were placed in a nitrogen atmosphere. Heat at 150 ° C for 1 hour. After cooling to room temperature, the insoluble matter was removed by filtration, and the filtrate was concentrated, and the obtained crude product was purified by silica gel column chromatography (solvent: hexane/ethyl acetate) to obtain 1-( Ethyl 3-pentyl)pyrazole-3-carboxylate 3.3 g.

向燒瓶中添加所述產物0.87g、乙醇6mL,於室溫下一面進行攪拌一面添加水0.1g、第三丁氧基鉀0.46g後,於70℃下攪拌30分鐘。冷卻至室溫後,添加使硫酸銅0.52g溶解於水5mL中而成的溶液,並於室溫下攪拌一小時。濾取所析出的固體,並於減壓下進行乾燥,藉此獲得0.7g的低分子銅錯合物A。 0.87 g of the product and 6 mL of ethanol were added to the flask, and 0.1 g of water and 0.46 g of potassium t-butoxide were added thereto while stirring at room temperature, followed by stirring at 70 ° C for 30 minutes. After cooling to room temperature, a solution obtained by dissolving 0.52 g of copper sulfate in 5 mL of water was added, and the mixture was stirred at room temperature for one hour. The precipitated solid was collected by filtration and dried under reduced pressure, whereby 0.7 g of a low molecular copper complex A was obtained.

<低分子銅錯合物B的合成> <Synthesis of Low Molecular Copper Complex B>

使化合物(A1-21)(886mg、9.84mmol)溶解於甲醇20ml中。將該溶液昇溫至50℃後,滴加氫氧化銅(449mg、4.60mmol)的甲醇溶液(160ml),並於50℃下進行2小時反應。反應結束後, 利用蒸發器將所產生的水及溶劑餾去,藉此獲得低分子銅錯合物B(1.00g)。 Compound (A1-21) (886 mg, 9.84 mmol) was dissolved in 20 ml of methanol. After the temperature of the solution was raised to 50 ° C, a solution of copper hydroxide (449 mg, 4.60 mmol) in methanol (160 ml) was added dropwise, and the reaction was carried out at 50 ° C for 2 hours. After the reaction, The produced water and solvent were distilled off using an evaporator, whereby a low molecular copper complex B (1.00 g) was obtained.

<低分子銅錯合物D的合成> <Synthesis of Low Molecular Copper Complex D>

使化合物(A2-1)(0.2g、1.1mmol)溶解於乙醇5ml中。將該溶液昇溫至70℃後,滴加乙酸銅(0.2g、1.1mmol)的乙醇溶液(5ml),並於70℃下進行2小時反應。反應結束後,利用蒸發器將所產生的水及溶劑餾去,藉此獲得低分子銅錯合物D(0.6g)。 Compound (A2-1) (0.2 g, 1.1 mmol) was dissolved in 5 ml of ethanol. After the solution was heated to 70 ° C, a solution of copper acetate (0.2 g, 1.1 mmol) in ethanol (5 ml) was added dropwise, and the reaction was carried out at 70 ° C for 2 hours. After completion of the reaction, the produced water and solvent were distilled off by an evaporator, whereby a low molecular copper complex D (0.6 g) was obtained.

<低分子銅錯合物E的合成> <Synthesis of Low Molecular Copper Complex E>

使化合物(a-19)53.1質量%水溶液(13.49g、29.1mmol)溶解於甲醇50mL中,將該溶液昇溫至50℃後,添加氫氧化銅(2.84g、29.1mmol)並於50℃下進行2小時反應。反應結束後,利用蒸發器將溶劑及所產生的水餾去,藉此獲得低分子銅錯合物E(8.57g)。 The compound (a-19) 53.1% by mass aqueous solution (13.49 g, 29.1 mmol) was dissolved in 50 mL of methanol, and the solution was heated to 50 ° C. Then, copper hydroxide (2.84 g, 29.1 mmol) was added and the mixture was subjected to 50 ° C. 2 hours reaction. After completion of the reaction, the solvent and the produced water were distilled off by an evaporator, whereby a low molecular copper complex E (8.57 g) was obtained.

即便於針對實驗例1中所使用的組成物1(含有銅化合物的組成物),使用等量的環戊酮來代替水的情況下,亦獲得相同的效果。另外,即便於針對實驗例1中所使用的組成物4(硬化性組成物),使用等量的環戊酮來代替水的情況下,亦獲得相同的效果。 That is, in the case where the composition 1 (the composition containing a copper compound) used in Experimental Example 1 was used, and the same amount of cyclopentanone was used instead of water, the same effect was obtained. Further, even in the case of the composition 4 (curable composition) used in Experimental Example 1, when the same amount of cyclopentanone was used instead of water, the same effect was obtained.

另外,即便於製備實驗例1中所使用的膜形成用組成物後,使用日本頗爾(Pall)製造的DFA4201NXEY(0.45μm尼龍過濾器)進行過濾的情況下,亦獲得相同的效果。 In addition, even after the film formation composition used in Experimental Example 1 was prepared, the same effect was obtained even when it was filtered using DFA4201 NXEY (0.45 μm nylon filter) manufactured by Pall Corporation of Japan.

10‧‧‧矽基板 10‧‧‧矽 substrate

12‧‧‧攝像元件部 12‧‧‧ Camera Components Division

13‧‧‧層間絕緣膜 13‧‧‧Interlayer insulating film

14‧‧‧基底層 14‧‧‧ basal layer

15B‧‧‧藍色的彩色濾光片 15B‧‧‧Blue color filter

15G‧‧‧綠色的彩色濾光片 15G‧‧‧Green color filter

15R‧‧‧紅色的彩色濾光片 15R‧‧‧Red color filter

16‧‧‧保護層 16‧‧‧Protective layer

17‧‧‧微透鏡 17‧‧‧Microlens

18‧‧‧遮光膜 18‧‧‧Shade film

20‧‧‧黏著劑 20‧‧‧Adhesive

22‧‧‧絕緣膜 22‧‧‧Insulation film

23‧‧‧金屬電極 23‧‧‧Metal electrodes

24‧‧‧阻焊劑層 24‧‧‧ solder resist layer

26‧‧‧內部電極 26‧‧‧Internal electrodes

27‧‧‧元件表面電極 27‧‧‧ Component surface electrode

30‧‧‧玻璃基板 30‧‧‧ glass substrate

42‧‧‧近紅外線截止濾光片 42‧‧‧Near-infrared cut-off filter

46‧‧‧平坦化層 46‧‧‧Destivation layer

60‧‧‧焊球 60‧‧‧ solder balls

70‧‧‧電路基板 70‧‧‧ circuit board

100‧‧‧固體攝像元件 100‧‧‧Solid camera components

Claims (14)

一種含有銅化合物的膜的製造方法,其包括:將含有銅化合物的組成物與含有硬化性化合物的硬化性組成物混合來製備膜形成用組成物的步驟、以及於製備後3日以內將膜形成用組成物應用於基材上的步驟。 A method for producing a film containing a copper compound, comprising the steps of: preparing a film-forming composition by mixing a composition containing a copper compound and a curable composition containing a curable compound, and coating the film within 3 days after preparation The step of forming the composition onto the substrate. 如申請專利範圍第1項所述的含有銅化合物的膜的製造方法,其中於膜形成用組成物的製備後1日以內進行應用。 The method for producing a copper compound-containing film according to the first aspect of the invention, wherein the film forming composition is used within one day after preparation. 如申請專利範圍第1項或第2項所述的含有銅化合物的膜的製造方法,其中相對於製備膜形成用組成物後10分鐘後的膜形成用組成物的初始黏度(V0),於相同溫度下應用時的膜形成用組成物的黏度(V1)的變化率為140%以下,且相對於所述初始黏度(V0)的所述黏度(V1)的變化率由下述式表示,式:((V1-V0)/V0)×100。 The method for producing a copper compound-containing film according to the first or second aspect of the invention, wherein the initial viscosity (V0) of the film-forming composition after 10 minutes from the preparation of the film-forming composition is The rate of change of the viscosity (V1) of the film-forming composition when applied at the same temperature is 140% or less, and the rate of change of the viscosity (V1) with respect to the initial viscosity (V0) is represented by the following formula. Formula: ((V1-V0)/V0) × 100. 如申請專利範圍第1項或第2項所述的含有銅化合物的膜的製造方法,其中硬化性化合物含有氧雜環化合物。 The method for producing a copper compound-containing film according to the first or second aspect of the invention, wherein the curable compound contains an oxygen heterocyclic compound. 如申請專利範圍第1項或第2項所述的含有銅化合物的膜的製造方法,其中硬化性化合物含有環氧化合物。 The method for producing a copper compound-containing film according to the first or second aspect of the invention, wherein the curable compound contains an epoxy compound. 如申請專利範圍第1項或第2項所述的含有銅化合物的膜的製造方法,其中相對於膜形成用組成物中的總固體成分的銅化合物的含量為10質量%以上。 The method for producing a copper compound-containing film according to the first or second aspect of the invention, wherein the content of the copper compound relative to the total solid content in the film-forming composition is 10% by mass or more. 如申請專利範圍第1項或第2項所述的含有銅化合物的膜 的製造方法,其中銅化合物含有藉由包含配位部位的聚合體與銅成分的反應所獲得的銅化合物。 A film containing a copper compound as described in claim 1 or 2 A method of producing a copper compound comprising a copper compound obtained by a reaction of a polymer comprising a coordination site with a copper component. 如申請專利範圍第1項或第2項所述的含有銅化合物的膜的製造方法,其中銅化合物包括:藉由主鏈上具有芳香族烴基及/或芳香族雜環基、且包含配位部位的聚合體(A1)與銅成分的反應所獲得的銅化合物;以及藉由包含配位部位的分子量為1000以下的化合物與銅成分的反應所獲得的銅化合物。 The method for producing a copper compound-containing film according to claim 1 or 2, wherein the copper compound comprises an aromatic hydrocarbon group and/or an aromatic heterocyclic group in the main chain, and includes a coordination group. A copper compound obtained by a reaction between a polymer (A1) at a site and a copper component; and a copper compound obtained by a reaction of a compound having a molecular weight of 1,000 or less and a copper component in a coordination site. 如申請專利範圍第1項或第2項所述的含有銅化合物的膜的製造方法,其包括自製備後至應用於基材上為止的期間內,於30℃以下保管膜形成用組成物。 The method for producing a film containing a copper compound according to the first or second aspect of the invention, which comprises, after the preparation to the substrate, the film forming composition is stored at 30 ° C or lower. 如申請專利範圍第1項或第2項所述的含有銅化合物的膜的製造方法,其藉由將膜形成用組成物在製備後3日以內應用於基材上,而抑制膜形成用組成物的增黏。 The method for producing a film containing a copper compound according to the first or second aspect of the invention, which is characterized in that the composition for film formation is applied to a substrate within 3 days after preparation, thereby suppressing the composition for film formation. The viscosity of the object. 如申請專利範圍第1項或第2項所述的含有銅化合物的膜的製造方法,其中含有銅化合物的膜為近紅外線截止濾光片。 The method for producing a copper compound-containing film according to the first or second aspect of the invention, wherein the film containing the copper compound is a near-infrared cut filter. 一種固體攝像元件,其包括藉由如申請專利範圍第1項至第11項中任一項所述的含有銅化合物的膜的製造方法所獲得的含有銅化合物的膜。 A solid-state image sensor comprising a copper compound-containing film obtained by the method for producing a copper compound-containing film according to any one of claims 1 to 11. 一種抑制膜形成用組成物的增黏的方法,其是抑制包含含有銅化合物的組成物及含有硬化性化合物的硬化性組成物的膜形成用組成物的增黏的方法,其包括: 於使用膜形成用組成物前3日以內,將含有銅化合物的組成物與硬化性組成物混合。 A method for suppressing adhesion of a film-forming composition, which is a method for suppressing adhesion of a film-forming composition comprising a composition containing a copper compound and a curable composition containing a curable compound, comprising: The composition containing the copper compound was mixed with the curable composition within 3 days before the film forming composition was used. 一種套組,其是用於製造包含含有銅化合物的組成物及含有硬化性化合物的硬化性組成物的膜形成用組成物的套組,其包括:含有銅化合物的組成物與硬化性組成物。 A kit for producing a film-forming composition comprising a composition containing a copper compound and a curable composition containing a curable compound, comprising: a composition containing a copper compound and a curable composition .
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