TWI643171B - Shift register and control method thereof - Google Patents

Shift register and control method thereof Download PDF

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TWI643171B
TWI643171B TW106133769A TW106133769A TWI643171B TW I643171 B TWI643171 B TW I643171B TW 106133769 A TW106133769 A TW 106133769A TW 106133769 A TW106133769 A TW 106133769A TW I643171 B TWI643171 B TW I643171B
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transistor
signal
level
control
stage
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TW106133769A
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TW201915987A (en
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林煒力
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友達光電股份有限公司
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Priority to CN201711119978.XA priority patent/CN107767917B/en
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/02Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264Details of driving circuits
    • G09G2310/0286Details of a shift registers arranged for use in a driving circuit

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)

Abstract

一種移位暫存器包含一控制電路以及一移位暫存電路。控制電路包含一第1級控制單元。第1級控制單元包含一第一電晶體、一第二電晶體以及一第三電晶體。第一電晶體輸出第1級控制訊號。第二電晶體依據一起始訊號導通第一電晶體。第三電晶體依據一第1級下拉訊號截止第一電晶體。第二電晶體與第三電晶體耦接於一操作節點。第一電晶體的一控制端與操作節點具有相同的電壓位準。移位暫存電路依據第1級控制訊號輸出一第1級移位訊號。 A shift register includes a control circuit and a shift register circuit. The control circuit includes a first-level control unit. The first-level control unit includes a first transistor, a second transistor, and a third transistor. The first transistor outputs a first-level control signal. The second transistor turns on the first transistor according to a start signal. The third transistor turns off the first transistor according to a first-level pull-down signal. The second transistor and the third transistor are coupled to an operation node. A control terminal of the first transistor has the same voltage level as the operating node. The shift temporary storage circuit outputs a first-stage shift signal according to the first-stage control signal.

Description

移位暫存器及其控制方法 Shift register and control method thereof

本揭示中所述實施例內容是有關於一種移位暫存器。 The embodiment described in the present disclosure is related to a shift register.

移位暫存器用以驅動顯示裝置。一般而言,移位暫存器具有多級架構,且前幾級是透過外部控制電路進行驅動。在現有的驅動方式中,外部控制電路對前幾級的各級移位暫存電路的控制節點(例如:Q點)皆是利用單一顆電晶體進行充電,且該些電晶體皆受同一個訊號控制。在這種情況下,傳輸至該些控制節點的控制訊號(例如:Q(n))可能會發生漏電程度不一致的問題。這可能會使得顯示面板產生局部亮暗線。 The shift register is used to drive the display device. Generally speaking, the shift register has a multi-stage architecture, and the first few stages are driven by an external control circuit. In the existing driving method, the external control circuit uses a single transistor to charge the control nodes (such as the Q point) of the first-stage shift temporary storage circuits, and the transistors are all subject to the same Signal control. In this case, the control signals (for example, Q (n)) transmitted to the control nodes may cause inconsistent leakage levels. This may cause the display panel to generate local bright and dark lines.

本揭示內容之一實施方式係關於一種移位暫存器。移位暫存器包含一控制電路以及一移位暫存電路。控制電路包含一第1級控制單元。第1級控制單元包含一第一電晶體、一第二電晶體以及一第三電晶體。第一電晶體輸出第 1級控制訊號。第二電晶體依據一起始訊號導通第一電晶體。第三電晶體依據一第1級下拉訊號截止第一電晶體。第二電晶體與第三電晶體耦接於一操作節點。第一電晶體的一控制端與操作節點具有相同的電壓位準。移位暫存電路依據第1級控制訊號輸出一第1級移位訊號。 An embodiment of the present disclosure relates to a shift register. The shift register includes a control circuit and a shift register circuit. The control circuit includes a first-level control unit. The first-level control unit includes a first transistor, a second transistor, and a third transistor. First transistor output Level 1 control signal. The second transistor turns on the first transistor according to a start signal. The third transistor turns off the first transistor according to a first-level pull-down signal. The second transistor and the third transistor are coupled to an operation node. A control terminal of the first transistor has the same voltage level as the operating node. The shift temporary storage circuit outputs a first-stage shift signal according to the first-stage control signal.

本揭示內容之一實施方式係關於一種移位暫存器的控制方法。控制方法包含:藉由一第一電晶體依據一起始訊號將相應於一第一定電壓的一控制訊號傳輸至一移位暫存電路;藉由一第二電晶體將起始訊號傳輸至第一電晶體的一控制端;藉由一第三電晶體依據一下拉訊號以及一第二定電壓下拉第一電晶體的控制端的一電壓位準;以及藉由移位暫存電路依據控制訊號輸出一移位訊號。 One embodiment of the present disclosure relates to a method for controlling a shift register. The control method includes: transmitting a control signal corresponding to a first constant voltage to a shift register circuit by a first transistor according to a start signal; and transmitting the start signal to a first transistor by a second transistor. A control terminal of a transistor; a voltage level of the control terminal of the first transistor is pulled down by a third transistor according to a pull signal and a second constant voltage; and a control signal output by a shift register circuit A shift signal.

綜上所述,透過應用上述至少一實施例,可使前幾級控制訊號(例如:Q(n))的漏電程度近乎相同,進而改善局部亮暗線的問題。 In summary, by applying the at least one embodiment described above, the leakage levels of the first few control signals (for example, Q (n)) can be nearly the same, thereby improving the problem of local bright and dark lines.

100‧‧‧移位暫存器 100‧‧‧ shift register

120、200、500、600‧‧‧控制電路 120, 200, 500, 600‧‧‧ control circuits

140(1)~140(12)、300、140(n)‧‧‧移位暫存電路 140 (1) ~ 140 (12), 300, 140 (n) ‧‧‧ shift temporary storage circuit

Q(1)、Q(2)、Q(3)、Q(4)、Q(n)、Q(n+k)‧‧‧控制訊號 Q (1), Q (2), Q (3), Q (4), Q (n), Q (n + k) ‧‧‧Control signal

LC1、LC2‧‧‧操作訊號 LC1, LC2‧‧‧ operation signal

HC(1)~HC(8)、HC(n)‧‧‧時脈訊號 HC (1) ~ HC (8), HC (n) ‧‧‧clock signal

G(1)~G(12)、G(n)、G(n+k)‧‧‧移位訊號 G (1) ~ G (12), G (n), G (n + k) ‧‧‧ shift signal

202、204、206、208、502、504、506、508、602、604、606、608‧‧‧控制單元 202, 204, 206, 208, 502, 504, 506, 508, 602, 604, 606, 608‧‧‧ control units

T11、T12、T13、T21、T14、T15、T31、T41、T51、T52、T53、T54、T32、T42、T61、T62、T63、T64、T43、T33‧‧‧電晶體 T11, T12, T13, T21, T14, T15, T31, T41, T51, T52, T53, T54, T32, T42, T61, T62, T63, T64, T43, T33‧‧‧Transistors

VGH、VGL‧‧‧定電壓 VGH, VGL‧‧‧constant voltage

ST‧‧‧起始訊號 ST‧‧‧Start signal

N(1)~N(4)‧‧‧操作節點 N (1) ~ N (4) ‧‧‧ Operation node

V1、V2、V3、V4、V5‧‧‧電壓 V1, V2, V3, V4, V5‧‧‧ voltage

VSS‧‧‧參考電壓 VSS‧‧‧Reference voltage

T1、T2、T3、T4‧‧‧時間 T1, T2, T3, T4‧‧‧ time

FS、F1‧‧‧下降邊緣 FS, F1 ‧‧‧ falling edge

R4‧‧‧上升邊緣 R4‧‧‧ rising edge

D1、D2‧‧‧階段 D1, D2‧‧‧‧stage

302‧‧‧驅動電路 302‧‧‧Drive circuit

304‧‧‧上拉電路 304‧‧‧pull-up circuit

306、308、310‧‧‧下拉電路 306, 308, 310‧‧‧ pull-down circuit

A(n)、A(1)、A(2)、A(3)、A(4)‧‧‧內部節點 A (n), A (1), A (2), A (3), A (4) ‧‧‧ internal nodes

ST(n)、ST(1)、ST(2)、ST(3)、ST(4)‧‧‧內部節點訊號 ST (n), ST (1), ST (2), ST (3), ST (4) ‧‧‧ Internal node signals

P(n)、K(n)‧‧‧穩壓節點 P (n), K (n) ‧‧‧regulated nodes

C1‧‧‧電容 C1‧‧‧capacitor

700‧‧‧控制方法 700‧‧‧Control method

S710、S720、S730、S740‧‧‧步驟 S710, S720, S730, S740‧‧‧ steps

為讓本揭示之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:第1圖是依照本揭示一些實施例所繪示的一種移位暫存器的示意圖;第2圖是依照本揭示一些實施例所繪示的第1圖的控制電路的電路圖;第3圖是依照本揭示一些實施例所繪示的移位暫存電路的 電路圖;第4圖是依照本揭示一些實施例所繪示的第1圖的移位暫存器的部分訊號的時序圖;第5圖是依照本揭示一些實施例所繪示的第1圖的控制電路的電路圖;第6圖是依照本揭示一些實施例所繪示的第1圖的控制電路的電路圖;以及第7圖是依照本揭示一些實施例所繪示的一種移位暫存器的控制方法的流程圖。 In order to make the above and other objects, features, advantages and embodiments of the present disclosure more comprehensible, the description of the drawings is as follows: FIG. 1 is a shift register according to some embodiments of the present disclosure FIG. 2 is a circuit diagram of the control circuit of FIG. 1 according to some embodiments of the present disclosure; FIG. 3 is a diagram of a shift register circuit according to some embodiments of the present disclosure. Circuit diagram; FIG. 4 is a timing diagram of some signals of the shift register according to FIG. 1 according to some embodiments of the present disclosure; FIG. 5 is a diagram of FIG. 1 according to some embodiments of the present disclosure; FIG. 6 is a circuit diagram of the control circuit of FIG. 1 according to some embodiments of the present disclosure; and FIG. 7 is a shift register according to some embodiments of the present disclosure. Flow chart of the control method.

下文係舉實施例配合所附圖式作詳細說明,但所提供之實施例並非用以限制本揭示所涵蓋的範圍,而結構運作之描述非用以限制其執行之順序,任何由元件重新組合之結構,所產生具有均等功效的裝置,皆為本揭示所涵蓋的範圍。另外,圖式僅以說明為目的,並未依照原尺寸作圖。為使便於理解,下述說明中相同元件或相似元件將以相同之符號標示而言明。 The following is a detailed description with examples and the accompanying drawings, but the examples provided are not intended to limit the scope covered by this disclosure, and the description of the structure operation is not intended to limit the order of its execution, and any recombination of components The structure of the device and the device with the same effect are all covered by the present disclosure. In addition, the drawings are for illustrative purposes only, and are not drawn to the original dimensions. In order to facilitate understanding, the same elements or similar elements in the following description will be described with the same symbols.

在全篇說明書與申請專利範圍所使用之用詞(terms),除有特別註明外,通常具有每個用詞使用在此領域中、在此揭露之內容中與特殊內容中的平常意義。 The terms used throughout the specification and the scope of patent applications, unless otherwise specified, usually have the ordinary meaning of each term used in this field, in the content disclosed here, and in special content.

請參考第1圖。第1圖是依照本揭示一些實施例所繪示的一種移位暫存器100的示意圖。在一些實施例中,移位暫存器100包含控制電路120以及複數個移位暫存電路。複數 個移位暫存電路例如移位暫存電路140(1)~140(12)。上述移位暫存器100中移位暫存電路的數量僅用以示例,移位暫存電路的各種數量皆在本揭示內容的考量範圍內。 Please refer to Figure 1. FIG. 1 is a schematic diagram of a shift register 100 according to some embodiments of the present disclosure. In some embodiments, the shift register 100 includes a control circuit 120 and a plurality of shift registers. plural The shift register circuits are, for example, shift register circuits 140 (1) to 140 (12). The number of the shift register circuits in the above-mentioned shift register 100 is merely used as an example, and the various numbers of the shift register circuits are all within the consideration range of the present disclosure.

在一些實施例中,控制電路120輸出第1級控制訊號Q(1)至第k級控制訊號。k為一正整數。以第1圖示例而言,k等於4,但本揭示內容不以此數值為限制。換言之,在一些其他的實施例中,k可為其他正整數。以第1圖示例而言,控制電路120分別輸出第1級控制訊號Q(1)、第2級控制訊號Q(2)、第3級控制訊號Q(3)以及第4級控制訊號Q(4)至第1級移位暫存電路140(1)、第2級移位暫存電路140(2)、第3級移位暫存電路140(3)以及第4級移位暫存電路140(4)。 In some embodiments, the control circuit 120 outputs the first-level control signal Q (1) to the k-th control signal. k is a positive integer. For the example in FIG. 1, k is equal to 4, but this disclosure is not limited by this value. In other words, in some other embodiments, k may be another positive integer. Taking the example in the first figure, the control circuit 120 outputs the first-level control signal Q (1), the second-level control signal Q (2), the third-level control signal Q (3), and the fourth-level control signal Q, respectively. (4) To the first stage shift register circuit 140 (1), the second stage shift register circuit 140 (2), the third stage shift register circuit 140 (3), and the fourth stage shift register Circuit 140 (4).

在一些實施例中,第1級移位暫存電路140(1)輸出第五級控制訊號至第五級移位暫存電路140(5),以驅動第五級移位暫存電路140(5)。第2級移位暫存電路140(2)輸出第六級控制訊號至第六級移位暫存電路140(6),以驅動第六級移位暫存電路140(6)。以此類推。 In some embodiments, the first-stage shift register circuit 140 (1) outputs a fifth-stage control signal to the fifth-stage shift register circuit 140 (5) to drive the fifth-stage shift register circuit 140 ( 5). The second-stage shift register circuit 140 (2) outputs the sixth-stage control signal to the sixth-stage shift register circuit 140 (6) to drive the sixth-stage shift register circuit 140 (6). And so on.

在一些實施例中,各移位暫存電路接收操作訊號LC1、操作訊號LC2、時脈訊號HC(1)~HC(8)其中一者以及相應的控制訊號,以輸出移位訊號G(1)~G(12)。舉例而言,第1級移位暫存電路140(1)接收操作訊號LC1、操作訊號LC2、第1級時脈訊號HC(1)以及第1級控制訊號Q(1),以輸出第1級移位訊號G(1)。其他級移位暫存電路具有相似的內容,故於此不再贅述。 In some embodiments, each shift register circuit receives an operation signal LC1, an operation signal LC2, a clock signal HC (1) ~ HC (8) and a corresponding control signal to output a shift signal G (1 ) ~ G (12). For example, the first-stage shift register circuit 140 (1) receives the operation signal LC1, the operation signal LC2, the first-stage clock signal HC (1), and the first-stage control signal Q (1) to output the first signal. Step shift signal G (1). The other stage shift temporary storage circuits have similar contents, so they are not repeated here.

請參考第2圖。第2圖是依照本揭示一些實施例所 繪示的控制電路200的電路圖。在一些實施例中,控制電路200用以實現第1圖的控制電路120。在一些實施例中,控制電路200包含複數級控制單元。以第2圖示例而言,控制電路200包含第1級控制單元202、第2級控制單元204、第3級控制單元206以及第4級控制單元208。 Please refer to Figure 2. FIG. 2 is a diagram illustrating some embodiments according to the present disclosure. A circuit diagram of the control circuit 200 is shown. In some embodiments, the control circuit 200 is used to implement the control circuit 120 of FIG. 1. In some embodiments, the control circuit 200 includes a complex stage control unit. In the example of FIG. 2, the control circuit 200 includes a first-level control unit 202, a second-level control unit 204, a third-level control unit 206, and a fourth-level control unit 208.

以第1級控制單元202為例,第1級控制單元202包含電晶體T11、電晶體T12以及電晶體T13。電晶體T11的第一端用以接收第一定電壓VGH。電晶體T11的第二端用以輸出第1級控制訊號Q(1)至第1級移位暫存電路140(1)。電晶體T12的第一端耦接電晶體T12的控制端。電晶體T12形成二極體形式(diode-connected)電晶體。電晶體T12的第一端以及電晶體T12的控制端用以接收起始訊號ST。電晶體T12的第二端、電晶體T11的控制端以及電晶體T13的第一端耦接於操作節點N(1)。電晶體T13的控制端用以接收第1級時脈訊號HC(1)。電晶體T13的第二端用以接收第二定電壓VGL。在一些實施例中,第一定電壓VGH高於第二定電壓VGL。 Taking the first-level control unit 202 as an example, the first-level control unit 202 includes a transistor T11, a transistor T12, and a transistor T13. The first terminal of the transistor T11 is used to receive a first constant voltage VGH. The second terminal of the transistor T11 is used to output the first-stage control signal Q (1) to the first-stage shift register circuit 140 (1). The first terminal of the transistor T12 is coupled to the control terminal of the transistor T12. Transistor T12 forms a diode-connected transistor. The first terminal of the transistor T12 and the control terminal of the transistor T12 are used to receive the start signal ST. The second terminal of the transistor T12, the control terminal of the transistor T11, and the first terminal of the transistor T13 are coupled to the operation node N (1). The control terminal of the transistor T13 is used to receive the first-stage clock signal HC (1). The second terminal of the transistor T13 is used to receive a second constant voltage VGL. In some embodiments, the first constant voltage VGH is higher than the second constant voltage VGL.

由於電晶體T11的控制端耦接於操作節點N(1),因此電晶體T11的控制端與操作節點N(1)具有相同的電壓位準。其他的操作節點N(2)~N(4)具有相似內容,故於此不再贅述。 Since the control terminal of the transistor T11 is coupled to the operation node N (1), the control terminal of the transistor T11 and the operation node N (1) have the same voltage level. The other operation nodes N (2) ~ N (4) have similar contents, so they will not be repeated here.

在操作上,電晶體T12依據起始訊號ST導通電晶體T11。電晶體T13依據第1級時脈訊號HC(1)截止電晶體T11。具體而言,電晶體T12依據起始訊號ST導通或截止。當電晶體T12導通(例如:起始訊號ST具有高電壓)時,電晶體T12 將起始訊號ST傳輸至操作節點N(1),使得電晶體T11依據起始訊號ST導通。接著,電晶體T11傳輸第一定電壓VGH作為第1級控制訊號Q(1)。此時,第1級控制訊號Q(1)相應於第一定電壓VGH。電晶體T13依據第1級下拉訊號導通或截止。以第2圖示例而言,第1級下拉訊號是以第1級時脈訊號HC(1)實現。當第三電晶體T13導通(例如:第1級時脈訊號HC(1)具有高電壓)時,電晶體T13將操作節點N(1)的電壓位準下拉至第二定電壓VGL,使得電晶體T11截止。第1級移位暫存電路140(1)則依據第1級控制訊號Q(1)、第1級時脈訊號HC(1)、操作訊號LC1以及操作訊號LC2輸出第1級移位訊號G(1)。由於其他級控制單元具有相似的電路架構以及操作,故於此不再贅述。 In operation, the transistor T12 turns on the transistor T11 according to the start signal ST. Transistor T13 turns off transistor T11 based on the first-stage clock signal HC (1). Specifically, the transistor T12 is turned on or off according to the start signal ST. When the transistor T12 is turned on (for example, the start signal ST has a high voltage), the transistor T12 is turned on. The start signal ST is transmitted to the operation node N (1), so that the transistor T11 is turned on according to the start signal ST. Then, the transistor T11 transmits the first constant voltage VGH as the first-level control signal Q (1). At this time, the first-level control signal Q (1) corresponds to the first constant voltage VGH. Transistor T13 is turned on or off according to the first pull-down signal. Taking the example in Figure 2 as an example, the first level pull-down signal is implemented by the first level clock signal HC (1). When the third transistor T13 is turned on (for example, the first-stage clock signal HC (1) has a high voltage), the transistor T13 pulls down the voltage level of the operating node N (1) to the second constant voltage VGL, so that the voltage The crystal T11 is turned off. The first stage shift temporary storage circuit 140 (1) outputs the first stage shift signal G according to the first stage control signal Q (1), the first stage clock signal HC (1), the operation signal LC1, and the operation signal LC2. (1). Since other stage control units have similar circuit architecture and operation, they are not repeated here.

請參考第3圖。第3圖是依照本揭示一些實施例所繪示的移位暫存電路300的電路圖。在一些實施例中,第3圖的移位暫存電路300用以實現第1圖中的第n級移位暫存電路140(n)。n為一正整數。舉例而言,當第3圖的移位暫存電路300用以實現第1圖中的第1級移位暫存電路時,n等於1。 Please refer to Figure 3. FIG. 3 is a circuit diagram of a shift register circuit 300 according to some embodiments of the present disclosure. In some embodiments, the shift register circuit 300 of FIG. 3 is used to implement the n-th stage shift register circuit 140 (n) of FIG. 1. n is a positive integer. For example, when the shift register circuit 300 in FIG. 3 is used to implement the first stage shift register circuit in FIG. 1, n is equal to 1.

在一些實施例中,移位暫存電路300包含驅動電路302、上拉電路304、第一下拉電路306、第二下拉電路308以及第三下拉電路310。 In some embodiments, the shift register circuit 300 includes a driving circuit 302, a pull-up circuit 304, a first pull-down circuit 306, a second pull-down circuit 308, and a third pull-down circuit 310.

在一些實施例中,驅動電路302用以依據第n級時脈訊號HC(n)輸出第n級移位訊號G(n)。在一些實施例中,驅動電路302包含電晶體T21。電晶體T21的第一端用以接收第n級時脈訊號HC(n)。電晶體T21的第二端用以輸出第n級移位訊號G(n)。電晶體T21的控制端用以接收第n級控制訊號Q(n)。 在操作上,當電晶體T21依據第n級控制訊號Q(n)導通時,電晶體T21傳輸第n級時脈訊號HC(n)作為第n級移位訊號G(n)。 In some embodiments, the driving circuit 302 is configured to output the n-th stage shift signal G (n) according to the n-th stage clock signal HC (n). In some embodiments, the driving circuit 302 includes a transistor T21. The first terminal of the transistor T21 is used to receive the n-th clock signal HC (n). The second terminal of the transistor T21 is used to output the n-th stage shift signal G (n). The control terminal of the transistor T21 is used to receive the n-th level control signal Q (n). In operation, when the transistor T21 is turned on according to the n-th stage control signal Q (n), the transistor T21 transmits the n-th stage clock signal HC (n) as the n-th stage shift signal G (n).

在一些實施例中,上拉電路304包含內部節點A(n)且用以依據第n級時脈訊號HC(n)輸出第(n+k)級控制訊號Q(n+k)。在一些實施例中,上拉電路304包含電晶體T14以及電晶體T15。電晶體T14的第一端用以接收第n級時脈訊號HC(n)。電晶體T14的第二端耦接於內部節點A(n)。電晶體T14的控制端用以接收第n級控制訊號Q(n)。電晶體T15的第一端用以輸出第(n+k)級控制訊號Q(n+k)。電晶體T15的第二端用以接收第n級移位訊號G(n)。電晶體T15的控制端耦接於內部節點A(n)。在操作上,當電晶體T14依據第n級控制訊號Q(n)導通時,電晶體T14將第n級時脈訊號HC(n)傳輸至內部節點A(n)。位於內部節點A(n)的電壓位準視為內部節點訊號ST(n)。電晶體T15依據位於內部節點A(n)的電壓位準導通或截止。當電晶體T15導通時,電晶體T15傳輸第n級移位訊號G(n)作為第(n+k)級控制訊號Q(n+k)。第n級移位暫存電路140(n)將第(n+k)級控制訊號Q(n+k)傳輸至第(n+k)級移位暫存電路,以驅動第(n+k)級移位暫存電路。 In some embodiments, the pull-up circuit 304 includes an internal node A (n) and is used to output the (n + k) th level control signal Q (n + k) according to the nth level clock signal HC (n). In some embodiments, the pull-up circuit 304 includes a transistor T14 and a transistor T15. The first terminal of the transistor T14 is used to receive the n-th clock signal HC (n). The second terminal of the transistor T14 is coupled to the internal node A (n). The control terminal of the transistor T14 is used to receive the n-th level control signal Q (n). The first terminal of the transistor T15 is used to output the (n + k) th stage control signal Q (n + k). The second terminal of the transistor T15 is used to receive the n-th shift signal G (n). The control terminal of the transistor T15 is coupled to the internal node A (n). In operation, when the transistor T14 is turned on according to the n-th control signal Q (n), the transistor T14 transmits the n-th clock signal HC (n) to the internal node A (n). The voltage level at the internal node A (n) is regarded as the internal node signal ST (n). Transistor T15 is turned on or off according to the voltage level at internal node A (n). When the transistor T15 is turned on, the transistor T15 transmits the n-th stage shift signal G (n) as the (n + k) -th stage control signal Q (n + k). The nth stage shift register circuit 140 (n) transmits the (n + k) th stage control signal Q (n + k) to the (n + k) stage shift register circuit to drive the (n + k) th stage ) Stage shift temporary storage circuit.

在一些實施例中,第一下拉電路306用以下拉第n級控制訊號Q(n)以及第n級移位訊號G(n)。在一些實施例中,第一下拉電路306包含電晶體T31以及電晶體T41。電晶體T31的第一端用以接收第n級移位訊號G(n)。電晶體T31的第二端用以接收參考電壓VSS。電晶體T31的控制端用以接收第(n+k)級移位訊號G(n+k)。電晶體T41的第一端用以接收第n 級控制訊號Q(n)。電晶體T41的第二端用以接收參考電壓VSS。電晶體T41的控制端用以接收第(n+k)級移位訊號G(n+k)。在操作上,當電晶體T31以及電晶體T41依據第(n+k)級移位訊號G(n+k)導通時,電晶體T31以及電晶體T41分別將第n級移位訊號G(n)以及第n級控制訊號Q(n)下拉至參考電壓VSS。 In some embodiments, the first pull-down circuit 306 is used to pull down the n-th stage control signal Q (n) and the n-th stage shift signal G (n). In some embodiments, the first pull-down circuit 306 includes a transistor T31 and a transistor T41. The first terminal of the transistor T31 is used to receive the n-th stage shift signal G (n). The second terminal of the transistor T31 is used to receive the reference voltage VSS. The control terminal of the transistor T31 is used to receive the (n + k) th stage shift signal G (n + k). The first end of transistor T41 is used to receive the nth Control signal Q (n). The second terminal of the transistor T41 is used to receive the reference voltage VSS. The control terminal of the transistor T41 is used to receive the (n + k) th stage shift signal G (n + k). In operation, when the transistor T31 and the transistor T41 are turned on according to the (n + k) th stage shift signal G (n + k), the transistor T31 and the transistor T41 respectively shift the nth stage shift signal G (n ) And the n-th level control signal Q (n) is pulled down to the reference voltage VSS.

在一些實施例中,第二下拉電路308用以下拉第n級控制訊號Q(n)以及第n級移位訊號G(n)。在一些實施例中,第二下拉電路308包含電晶體T51、電晶體T52、電晶體T53、電晶體T54、電晶體T32以及電晶體T42。電晶體T51的第一端以及控制端用以接收操作訊號LC1。電晶體T51形成二極體形式電晶體。電晶體T51的第二端耦接電晶體T53的控制端。電晶體T53的第一端用以接收操作訊號LC1。電晶體T53的第二端耦接於第n級穩壓節點P(n)。電晶體T52的第一端耦接電晶體T51的第二端。電晶體T52的第二端用以接收參考電壓VSS。電晶體T54的第一端耦接於第n級穩壓節點P(n)。電晶體T54的第二端用以接收參考電壓VSS。電晶體T52以及電晶體T54的控制端用以接收第n級控制訊號Q(n)。電晶體T32的第一端耦接電容C1且用以接收第n級移位訊號G(n)。電晶體T32的第二端用以接收參考電壓VSS。電晶體T42的第一端用以接收第n級控制訊號Q(n)。電晶體T42的第二端用以接收參考電壓VSS。電晶體T32的控制端以及電晶體T42的控制端耦接於第n級穩壓節點P(n)。 In some embodiments, the second pull-down circuit 308 is used to pull down the n-th stage control signal Q (n) and the n-th stage shift signal G (n). In some embodiments, the second pull-down circuit 308 includes a transistor T51, a transistor T52, a transistor T53, a transistor T54, a transistor T32, and a transistor T42. The first terminal and the control terminal of the transistor T51 are used to receive the operation signal LC1. Transistor T51 forms a diode-type transistor. The second terminal of the transistor T51 is coupled to the control terminal of the transistor T53. The first end of the transistor T53 is used to receive the operation signal LC1. The second terminal of the transistor T53 is coupled to the n-th voltage stabilizing node P (n). The first terminal of the transistor T52 is coupled to the second terminal of the transistor T51. The second terminal of the transistor T52 is used to receive the reference voltage VSS. The first terminal of the transistor T54 is coupled to the n-th level regulator node P (n). The second terminal of the transistor T54 is used to receive the reference voltage VSS. The control terminals of the transistor T52 and the transistor T54 are used to receive the n-th level control signal Q (n). The first terminal of the transistor T32 is coupled to the capacitor C1 and configured to receive the n-th stage shift signal G (n). The second terminal of the transistor T32 is used to receive the reference voltage VSS. The first terminal of the transistor T42 is used to receive the n-th level control signal Q (n). The second terminal of the transistor T42 is used to receive the reference voltage VSS. The control terminal of the transistor T32 and the control terminal of the transistor T42 are coupled to the n-th level regulator node P (n).

在操作上,當電晶體T51依據操作訊號LC1(例 如:操作訊號LC1具有高電壓)導通時,電晶體T51將操作訊號LC1傳輸至電晶體T53的控制端。當電晶體T53依據操作訊號LC1導通時,電晶體T53將操作訊號LC1傳輸至第n級穩壓節點P(n)。當電晶體T32以及電晶體T42依據位於第n級穩壓節點P(n)的電壓位準導通時,電晶體T32以及電晶體T42分別將第n級移位訊號G(n)以及第n級控制訊號Q(n)下拉至參考電壓VSS。當電晶體T54以及電晶體T52依據第n級控制訊號Q(n)導通時,電晶體T54以及電晶體T52分別將位於第n級穩壓節點P(n)的電壓位準以及位於電晶體T53的控制端的電壓位準下拉至參考電壓VSS。 In operation, when the transistor T51 is based on the operating signal LC1 (for example For example, when the operation signal LC1 has a high voltage, the transistor T51 transmits the operation signal LC1 to the control terminal of the transistor T53. When the transistor T53 is turned on according to the operation signal LC1, the transistor T53 transmits the operation signal LC1 to the n-th level voltage stabilization node P (n). When the transistor T32 and the transistor T42 are turned on according to the voltage level at the n-th voltage stabilizing node P (n), the transistor T32 and the transistor T42 respectively shift the n-th stage by the signal G (n) and the n-th The control signal Q (n) is pulled down to the reference voltage VSS. When the transistor T54 and the transistor T52 are turned on according to the n-th level control signal Q (n), the transistor T54 and the transistor T52 will be at the voltage level of the n-th voltage stabilization node P (n) and at the transistor T53, respectively. The voltage level of the control terminal is pulled down to the reference voltage VSS.

在一些實施例中,第三下拉電路310用以下拉第n級控制訊號Q(n)以及第n級移位訊號G(n)。在一些實施例中,第三下拉電路310包含電晶體T61、電晶體T62、電晶體T63、電晶體T64、電晶體T43以及電晶體T33。電晶體T61的第一端以及控制端用以接收操作訊號LC2。電晶體T61形成二極體形式電晶體。電晶體T61的第二端耦接電晶體T63的控制端。電晶體T63的第一端用以接收操作訊號LC2。電晶體T63的第二端耦接於第n級穩壓節點K(n)。電晶體T62的第一端耦接電晶體T61的第二端。電晶體T62的第二端用以接收參考電壓VSS。電晶體T64的第一端耦接於第n級穩壓節點K(n)。電晶體T64的第二端用以接收參考電壓VSS。電晶體T62以及電晶體T64的控制端用以接收第n級控制訊號Q(n)。電晶體T33的第一端用以接收第n級移位訊號G(n)。電晶體T33的第二端用以接收參考電壓VSS。電晶體T43的第一端用以接收第n級 控制訊號Q(n)。電晶體T43的第二端用以接收參考電壓VSS。電晶體T33的控制端以及電晶體T43的控制端耦接於第n級穩壓節點K(n)。 In some embodiments, the third pull-down circuit 310 is used to pull down the n-th stage control signal Q (n) and the n-th stage shift signal G (n). In some embodiments, the third pull-down circuit 310 includes a transistor T61, a transistor T62, a transistor T63, a transistor T64, a transistor T43, and a transistor T33. The first terminal and the control terminal of the transistor T61 are used to receive the operation signal LC2. Transistor T61 forms a diode-type transistor. The second terminal of the transistor T61 is coupled to the control terminal of the transistor T63. The first end of the transistor T63 is used to receive the operation signal LC2. The second terminal of the transistor T63 is coupled to the n-th voltage stabilizing node K (n). A first terminal of the transistor T62 is coupled to a second terminal of the transistor T61. The second terminal of the transistor T62 is used to receive the reference voltage VSS. The first terminal of the transistor T64 is coupled to the n-th voltage stabilizing node K (n). The second terminal of the transistor T64 is used to receive the reference voltage VSS. The control terminals of the transistor T62 and the transistor T64 are used to receive the n-th level control signal Q (n). The first terminal of the transistor T33 is used to receive the n-th shift signal G (n). The second terminal of the transistor T33 is used to receive the reference voltage VSS. The first end of transistor T43 is used to receive the nth stage Control signal Q (n). The second terminal of the transistor T43 is used to receive the reference voltage VSS. The control terminal of the transistor T33 and the control terminal of the transistor T43 are coupled to the n-th voltage stabilizing node K (n).

在操作上,當電晶體T61依據操作訊號LC2(例如:操作訊號LC2具有高電壓)導通時,電晶體T61將操作訊號LC2傳輸至電晶體T63的控制端。當電晶體T63依據操作訊號LC2導通時,電晶體T63將操作訊號LC2傳輸至第n級穩壓節點K(n)。當電晶體T33以及電晶體T43依據位於第n級穩壓節點K(n)的電壓位準導通時,電晶體T33以及電晶體T43分別將第n級移位訊號G(n)以及第n級控制訊號Q(n)下拉至參考電壓VSS。當電晶體T64以及電晶體T62依據第n級控制訊號Q(n)導通時,電晶體T64以及電晶體T62分別將位於第n級穩壓節點K(n)的電壓位準以及位於電晶體T63的控制端的電壓位準下拉至參考電壓VSS。 In operation, when the transistor T61 is turned on according to the operation signal LC2 (for example, the operation signal LC2 has a high voltage), the transistor T61 transmits the operation signal LC2 to the control terminal of the transistor T63. When the transistor T63 is turned on according to the operation signal LC2, the transistor T63 transmits the operation signal LC2 to the n-th voltage stabilizing node K (n). When the transistor T33 and the transistor T43 are turned on according to the voltage level at the n-th voltage stabilizing node K (n), the transistor T33 and the transistor T43 shift the n-th stage by the signal G (n) and the n-th stage The control signal Q (n) is pulled down to the reference voltage VSS. When the transistor T64 and the transistor T62 are turned on according to the nth stage control signal Q (n), the transistor T64 and the transistor T62 will be at the voltage level of the nth voltage stabilizing node K (n) and the transistor T63, respectively. The voltage level of the control terminal is pulled down to the reference voltage VSS.

在一些實施例中,上述該些電晶體是以N型電晶體實現。在一些其他的實施例中,上述該些電晶體可以以P型電晶體實現。本揭示內容不限制該些電晶體的型式。 In some embodiments, the transistors are implemented by N-type transistors. In some other embodiments, the transistors may be implemented as P-type transistors. This disclosure does not limit the types of these transistors.

請參考第4圖。第4圖是依照本揭示一些實施例所繪示的第1圖的移位暫存器100的部分訊號的時序圖。 Please refer to Figure 4. FIG. 4 is a timing diagram of some signals of the shift register 100 shown in FIG. 1 according to some embodiments of the present disclosure.

請參考第4圖。在一些實施例中,起始訊號ST具有兩個電壓。此兩個電壓分別為電壓V1以及電壓V2。在一些實施例中,電壓V1高於電壓V2。在一些實施例中,電壓V1對應於邏輯值1且電壓V2對應於邏輯值0。在一些實施例中,電壓V1實質上等於第一定電壓VGH且電壓V2實質上等於第二 定電壓VGL。時脈訊號HC(1)~HC(8)具有兩個電壓。此兩個電壓分別為電壓V3以及電壓V4。在一些實施例中,電壓V3高於電壓V4。在一些實施例中,電壓V3對應於邏輯值1且電壓V4對應於邏輯值0。 Please refer to Figure 4. In some embodiments, the start signal ST has two voltages. These two voltages are voltage V1 and voltage V2, respectively. In some embodiments, the voltage V1 is higher than the voltage V2. In some embodiments, the voltage V1 corresponds to a logic value 1 and the voltage V2 corresponds to a logic value 0. In some embodiments, the voltage V1 is substantially equal to the first constant voltage VGH and the voltage V2 is substantially equal to the second constant voltage VGH. Constant voltage VGL. The clock signals HC (1) ~ HC (8) have two voltages. These two voltages are respectively voltage V3 and voltage V4. In some embodiments, the voltage V3 is higher than the voltage V4. In some embodiments, the voltage V3 corresponds to a logic value 1 and the voltage V4 corresponds to a logic value 0.

請同時參考第2圖至第4圖。在時間T1至時間T2(例如:第一充電階段D1),起始訊號ST具有電壓V1。第1級控制單元202的電晶體T12依據起始訊號ST導通。電晶體T12將起始訊號ST傳輸至操作節點N(1)。此時,位於操作節點N(1)的電壓位準實質上等於電壓V1。電晶體T11依據位於操作節點N(1)的電壓位準導通。電晶體T11將第一定電壓VGH傳輸至第1級移位暫存電路140(1)作為第1級控制訊號Q(1)。此時,第1級控制訊號Q(1)的電壓位準實質上等於第一定電壓VGH,因此電晶體T21導通,電晶體T21傳輸第1級時脈訊號HC(1)作為第n級移位訊號G(n)。由於第1級時脈訊號HC(1)在時間T1至時間T2具有電壓V4,因此電晶體T13截止。 Please also refer to Figures 2 to 4. From time T1 to time T2 (for example, the first charging phase D1), the start signal ST has a voltage V1. The transistor T12 of the first-level control unit 202 is turned on according to the start signal ST. Transistor T12 transmits the start signal ST to the operating node N (1). At this time, the voltage level at the operation node N (1) is substantially equal to the voltage V1. Transistor T11 is turned on according to the voltage level at the operating node N (1). The transistor T11 transmits the first constant voltage VGH to the first-stage shift register circuit 140 (1) as the first-stage control signal Q (1). At this time, the voltage level of the first stage control signal Q (1) is substantially equal to the first constant voltage VGH, so the transistor T21 is turned on, and the transistor T21 transmits the first stage clock signal HC (1) as the nth stage shift Bit signal G (n). Since the first-stage clock signal HC (1) has a voltage V4 from time T1 to time T2, the transistor T13 is turned off.

在時間T2,第1級時脈訊號HC(1)從電壓V4上升為電壓V3。第1級控制單元202的電晶體T13依據第1級時脈訊號HC(1)導通。電晶體T13將位於操作節點N(1)的電壓位準下拉成第二定電壓VGL。此時,位於操作節點N(1)的電壓位準實質上等於第二定電壓VGL。由於電晶體T21傳輸第1級時脈訊號HC(1)傳輸作為第n級移位訊號G(n)且第n級移位訊號G(n)會透過電容C1耦合至第1級控制訊號Q(1),因此第1級控制訊號Q(1)基於電容C1的耦合效應從第一定電壓VGH上升至電壓V5。 At time T2, the first-stage clock signal HC (1) rises from voltage V4 to voltage V3. The transistor T13 of the first-stage control unit 202 is turned on according to the first-stage clock signal HC (1). The transistor T13 pulls down the voltage level at the operating node N (1) to a second constant voltage VGL. At this time, the voltage level at the operation node N (1) is substantially equal to the second constant voltage VGL. Since the transistor T21 transmits the first-stage clock signal HC (1) as the n-stage shift signal G (n) and the n-stage shift signal G (n) is coupled to the first-stage control signal Q through the capacitor C1 (1), so the first level control signal Q (1) rises from the first constant voltage VGH to the voltage V5 based on the coupling effect of the capacitor C1.

在時間T3,第1級時脈訊號HC(1)從電壓V3降為電壓V4。第1級控制單元202的電晶體T13依據第1級時脈訊號HC(1)截止。第1級控制訊號Q(1)從電壓V5降回第一定電壓VGH。 At time T3, the first-stage clock signal HC (1) drops from voltage V3 to voltage V4. The transistor T13 of the first-stage control unit 202 is turned off according to the first-stage clock signal HC (1). The first level control signal Q (1) drops from the voltage V5 to the first constant voltage VGH.

在時間T4,第1級控制訊號Q(1)依據第5級時脈訊號HC(5)下拉至參考電壓VSS。舉例而言,當第5級移位暫存電路140(5)輸出第5級時脈訊號HC(5)作為第5級移位訊號G(5)時,第1級移位暫存電路140(1)的電晶體T41依據第5級移位訊號G(5)導通。當電晶體T41導通時,電晶體T41將第1級控制訊號Q(1)下拉至參考電壓VSS。 At time T4, the first-stage control signal Q (1) is pulled down to the reference voltage VSS according to the fifth-stage clock signal HC (5). For example, when the fifth stage shift register circuit 140 (5) outputs the fifth stage clock signal HC (5) as the fifth stage shift signal G (5), the first stage shift register circuit 140 The transistor T41 of (1) is turned on according to the fifth-stage shift signal G (5). When the transistor T41 is turned on, the transistor T41 pulls down the first-level control signal Q (1) to the reference voltage VSS.

以第4圖示例而言,起始訊號ST的下降邊緣FS於時序上早於第1級時脈訊號HC(1)的下降邊緣F1。在一些實施例中,起始訊號ST的下降邊緣FS於時序上不晚於第1級時脈訊號HC(1)的下降邊緣F1。電晶體T13依據第1級時脈訊號HC(1)對位於電晶體T11的控制端的電壓位準進行下拉。等效而言,第1級時脈訊號HC(1)的下降邊緣F1代表電晶體T13完成下拉操作的時間點。假設起始訊號ST的下降邊緣FS於時序上晚於第1級時脈訊號HC(1)的下降邊緣F1。起始訊號ST可能會將位於電晶體T11的控制端的電壓位準再次拉升,使得電晶體T11發生誤開啟。因此,起始訊號ST的下降邊緣FS於時序上不晚於第1級時脈訊號HC(1)的下降邊緣F1。在第4圖中,起始訊號ST的下降邊緣FS於時序上早於第1級時脈訊號HC(1)的下降邊緣F1,可確保起始訊號ST在電晶體T13完成下拉操作之前已回到低電壓。如此,可確保位於電晶體T11的控制端的電壓位 準不會被起始訊號ST再次拉升。 Taking the example in FIG. 4 as an example, the falling edge FS of the start signal ST is earlier in timing than the falling edge F1 of the clock signal HC (1) of the first stage. In some embodiments, the falling edge FS of the start signal ST is not later than the falling edge F1 of the first-stage clock signal HC (1) in timing. Transistor T13 pulls down the voltage level of the control terminal of transistor T11 according to the first-stage clock signal HC (1). Equivalently, the falling edge F1 of the first-stage clock signal HC (1) represents the time point when the transistor T13 completes the pull-down operation. It is assumed that the falling edge FS of the start signal ST is later in timing than the falling edge F1 of the clock signal HC (1) of the first stage. The start signal ST may pull up the voltage level of the control terminal of the transistor T11 again, so that the transistor T11 is turned on by mistake. Therefore, the falling edge FS of the start signal ST is not later than the falling edge F1 of the first-stage clock signal HC (1) in timing. In Figure 4, the falling edge FS of the start signal ST is earlier in timing than the falling edge F1 of the clock signal HC (1) of the first stage, which can ensure that the start signal ST is returned before the transistor T13 completes the pull-down operation. To low voltage. In this way, the voltage level of the control terminal of the transistor T11 can be ensured. The standard will not be pulled up again by the start signal ST.

在一些實施例中,起始訊號ST的下降邊緣FS於時序上對齊第k級下拉訊號的上升邊緣。以第1圖示例而言,k等於4,且第4級控制單元208的電晶體T13是受第4級時脈訊號HC(4)控制以下拉電晶體T11的控制端的電壓位準。等效而言,第4級時脈訊號HC(4)用以實現第4級下拉訊號。在第4圖中,起始訊號ST的下降邊緣FS於時序上對齊第4級時脈訊號HC(4)的上升邊緣R4。由於起始訊號ST的脈衝寬度涵蓋第1級時脈訊號HC(1)至第4級時脈訊號HC(4)的上升邊緣,因此可使第1級控制訊號Q(1)、第2級控制訊號Q(2)、第3級控制訊號Q(3)以及第4級控制訊號Q(4)的第一充電階段D1皆被充電至相同的電壓位準。 In some embodiments, the falling edge FS of the start signal ST is aligned in timing with the rising edge of the k-th pull-down signal. Taking the example in FIG. 1, k is equal to 4, and the transistor T13 of the fourth-stage control unit 208 is controlled by the fourth-stage clock signal HC (4) to control the voltage level of the control terminal of the pull-down transistor T11. Equivalently, the fourth-level clock signal HC (4) is used to implement the fourth-level pull-down signal. In FIG. 4, the falling edge FS of the start signal ST is aligned in timing with the rising edge R4 of the fourth-stage clock signal HC (4). Since the pulse width of the start signal ST covers the rising edges of the first-stage clock signal HC (1) to the fourth-stage clock signal HC (4), the first-stage control signal Q (1), the second-stage The first charging stage D1 of the control signal Q (2), the third-level control signal Q (3), and the fourth-level control signal Q (4) are all charged to the same voltage level.

藉由控制電路120的配置,在第1級控制訊號Q(1)的第一充電階段D1,第1級控制訊號Q(1)會被充電至第一定電壓VGH。當第1級時脈訊號HC(1)在時間T2轉變為高電壓時,位於電晶體T11的控制端的電壓位準被下拉至參考電壓VSS。如此,在第1級控制訊號Q(1)的第二充電階段D2,第1級控制單元202中的電晶體T11的閘極-汲極電壓(Vgd)實質上等於第二定電壓VGL與第一定電壓VGH之間的電壓差,第1級控制單元202中的電晶體T11的源極-汲極電壓(Vsd)實質上等於電壓V5與第一定電壓VGH之間的電壓差。由於第2級控制單元204、第3級控制單元206以及第4級控制單元208具有相似的電路架構,因此在第2級控制訊號Q(2)、第3級控制訊號Q(3)以及第4級控制訊號Q(4)的第二充電階段,該些控制單元中的 電晶體T11的閘極-汲極電壓(Vgd)實質上亦等於第二定電壓VGL與第一定電壓VGH之間的電壓差。如此,前四級的電晶體T11承受相同的偏壓且前四級的控制訊號(例如:控制訊號Q(1)~Q(4))於第二充電階段的漏電程度相同。在這種情況下,可使得前四級的移位暫存電路的輸出能力相近,進而改善局部亮暗線的問題。 With the configuration of the control circuit 120, in the first charging stage D1 of the first-stage control signal Q (1), the first-stage control signal Q (1) is charged to the first constant voltage VGH. When the clock signal HC (1) of the first stage changes to a high voltage at time T2, the voltage level of the control terminal of the transistor T11 is pulled down to the reference voltage VSS. Thus, in the second charging stage D2 of the first-stage control signal Q (1), the gate-drain voltage (Vgd) of the transistor T11 in the first-stage control unit 202 is substantially equal to the second constant voltage VGL and the first The voltage difference between a certain voltage VGH. The source-drain voltage (Vsd) of the transistor T11 in the first-stage control unit 202 is substantially equal to the voltage difference between the voltage V5 and the first constant voltage VGH. Since the second-level control unit 204, the third-level control unit 206, and the fourth-level control unit 208 have similar circuit architectures, the second-level control signal Q (2), the third-level control signal Q (3), and the The second charging stage of the 4-level control signal Q (4). The gate-drain voltage (Vgd) of the transistor T11 is also substantially equal to the voltage difference between the second constant voltage VGL and the first constant voltage VGH. In this way, the transistor T11 of the first four stages is subjected to the same bias voltage and the control signals of the first four stages (for example, the control signals Q (1) to Q (4)) have the same degree of leakage in the second charging stage. In this case, the output capabilities of the first four stages of the temporary storage circuits can be made similar, thereby improving the problem of local bright and dark lines.

請參考第5圖。第5圖是依照本揭示一些實施例所繪示的控制電路500的電路圖。在一些實施例中,控制電路500用以實現第1圖的控制電路120。在一些實施例中,控制電路500包含複數級控制單元。以第5圖示例而言,控制電路500包含第1級控制單元502、第2級控制單元504、第3級控制單元506以及第4級控制單元508。第5圖的內容相似於第2圖,故以下僅針對第5圖與第2圖之間的主要差異進行描述。其餘部分請參考前述實施例,於此不再贅述。 Please refer to Figure 5. FIG. 5 is a circuit diagram of a control circuit 500 according to some embodiments of the present disclosure. In some embodiments, the control circuit 500 is used to implement the control circuit 120 of FIG. 1. In some embodiments, the control circuit 500 includes a complex stage control unit. Taking the example in FIG. 5, the control circuit 500 includes a first-level control unit 502, a second-level control unit 504, a third-level control unit 506, and a fourth-level control unit 508. The content of Figure 5 is similar to Figure 2, so only the main differences between Figure 5 and Figure 2 will be described below. For the rest, please refer to the foregoing embodiments, and details are not described herein again.

以第5圖示例而言,該些電晶體T13的控制端用以接收相應的移位訊號。舉例而言,第1級控制單元502的電晶體T13的控制端用以接收第1級移位訊號G(1)。如此,當第1級移位訊號G(1)具有高電壓時,電晶體T13將會導通且將位於電晶體T11的控制端的電壓位準下拉至第二定電壓VGL。由於其他級控制單元具有相似的內容,故於此不再贅述。 Taking the example in FIG. 5 as an example, the control terminals of the transistors T13 are used to receive corresponding shift signals. For example, the control terminal of the transistor T13 of the first-stage control unit 502 is used to receive the first-stage shift signal G (1). In this way, when the first-stage shift signal G (1) has a high voltage, the transistor T13 will be turned on and the voltage level at the control terminal of the transistor T11 will be pulled down to the second constant voltage VGL. Since other levels of control units have similar content, they will not be repeated here.

藉由控制電路500的配置,各級移位訊號(例如:移位訊號G(1)~G(4))作為各級的下拉訊號。由於各級移位訊號在每一幀(frame)內只會被拉升及拉降一次,因此相較於控制電路200的電晶體T13,控制電路500的電晶體T13所遭受的 應力較小。 With the configuration of the control circuit 500, the shift signals (for example, shift signals G (1) to G (4)) at each level are used as the pull-down signals at each level. Because the shift signals at all levels are only pulled up and down once in each frame, compared to the transistor T13 of the control circuit 200, the transistor T13 of the control circuit 500 suffers Less stress.

請參考第6圖。第6圖是依照本揭示一些實施例所繪示的控制電路600的電路圖。在一些實施例中,控制電路600用以實現第1圖的控制電路120。在一些實施例中,控制電路600包含複數級控制單元。以第6圖示例而言,控制電路600包含第1級控制單元602、第2級控制單元604、第3級控制單元606以及第4級控制單元608。第6圖的控制電路600相似於第5圖的控制電路500,故以下僅針對第6圖與第5圖之間的主要差異進行描述。其餘部分請參考前述實施例,於此不再贅述。 Please refer to Figure 6. FIG. 6 is a circuit diagram of a control circuit 600 according to some embodiments of the present disclosure. In some embodiments, the control circuit 600 is used to implement the control circuit 120 of FIG. 1. In some embodiments, the control circuit 600 includes a complex stage control unit. Taking the example in FIG. 6, the control circuit 600 includes a first-level control unit 602, a second-level control unit 604, a third-level control unit 606, and a fourth-level control unit 608. The control circuit 600 of FIG. 6 is similar to the control circuit 500 of FIG. 5, so only the main differences between FIG. 6 and FIG. 5 will be described below. For the rest, please refer to the foregoing embodiments, and details are not described herein again.

以第6圖示例而言,該些電晶體T13的控制端耦接相應的上拉電路304的內部節點A(n)。舉例而言,第1級控制單元602的電晶體T13耦接第1級移位暫存電路140(1)的上拉電路304的內部節點,以接收內部節點訊號ST(1)。如此,當內部節點訊號ST(1)具有高電壓位準時,電晶體T13將會導通且將位於電晶體T11的控制端的電壓位準下拉至第二定電壓VGL。等效而言,位於內部節點A(1)的電壓位準作為用以控制電晶體T13的第1級下拉訊號。換言之,內部節點A(1)的電壓位準實質上相同於第1級下拉訊號的電壓位準。由於其他級控制單元具有相似的內容,故於此不再贅述。 Taking the example in FIG. 6 as an example, the control terminal of the transistors T13 is coupled to the internal node A (n) of the corresponding pull-up circuit 304. For example, the transistor T13 of the first-stage control unit 602 is coupled to the internal node of the pull-up circuit 304 of the first-stage shift register circuit 140 (1) to receive the internal node signal ST (1). In this way, when the internal node signal ST (1) has a high voltage level, the transistor T13 will be turned on and the voltage level at the control terminal of the transistor T11 will be pulled down to the second constant voltage VGL. Equivalently, the voltage level at the internal node A (1) is used as the first pull-down signal for controlling the transistor T13. In other words, the voltage level of the internal node A (1) is substantially the same as the voltage level of the first-level pull-down signal. Since other levels of control units have similar content, they will not be repeated here.

第5圖的控制電路500是以各級移位訊號作為各級下拉訊號。由於各級移位訊號連接至顯示面板的顯示區域以驅動顯示區域的像素,因此各級移位訊號會受到較大的電阻電容延遲(RC delay)影響。在這種情況下,各級移位訊號的波形會不接近方波。相較於此,控制電路600是利用內部節點訊號 ST(1)~ST(4)作為前四級的下拉訊號。相較於各級移位訊號,內部節點訊號ST(1)~ST(4)較接近方波,因此控制電路600的下拉能力較佳。 The control circuit 500 in FIG. 5 uses the shift signals at various stages as the pull-down signals at various stages. Since the shift signals of various stages are connected to the display area of the display panel to drive the pixels of the display area, the shift signals of the stages are affected by a large RC delay. In this case, the waveform of the shift signal at each stage will not be close to the square wave. In contrast, the control circuit 600 uses internal node signals ST (1) ~ ST (4) are used as the first four pull-down signals. Compared with the shift signals at various levels, the internal node signals ST (1) ~ ST (4) are closer to the square wave, so the pull-down capability of the control circuit 600 is better.

請參考第7圖。第7圖是依照本揭示一些實施例所繪示的一種移位暫存器的控制方法700的流程圖。為了以較佳的方式理解本揭示內容,控制方法700將搭配第1圖的移位暫存器100的第1級控制單元202進行討論,但本揭示內容不以此為限制。 Please refer to Figure 7. FIG. 7 is a flowchart of a control method 700 for a shift register according to some embodiments of the present disclosure. In order to better understand the present disclosure, the control method 700 will be discussed in conjunction with the first-level control unit 202 of the shift register 100 in FIG. 1, but the present disclosure is not limited thereto.

在步驟S710中,藉由第1級控制單元202的電晶體T11依據起始訊號ST將相應於第一定電壓VGH的第1級控制訊號Q(1)傳輸至第1級移位暫存電路140(1)。 In step S710, the transistor T11 of the first-stage control unit 202 transmits the first-stage control signal Q (1) corresponding to the first constant voltage VGH to the first-stage shift register circuit according to the start signal ST. 140 (1).

在步驟S720中,藉由第1級控制單元202的電晶體T12將起始訊號ST傳輸至第1級控制單元202的電晶體T11的控制端。在一些實施例中,當電晶體T12依據起始訊號ST導通(例如:起始訊號ST具有高電壓)時,電晶體T12將起始訊號ST傳輸至電晶體T11的控制端。如此,電晶體T11依據起始訊號ST導通。接著,電晶體T11傳輸第一定電壓VGH作為第1級控制訊號Q(1)。此時,第1級控制訊號Q(1)相應於第一定電壓VGH。 In step S720, the start signal ST is transmitted to the control terminal of the transistor T11 of the first-stage control unit 202 through the transistor T12 of the first-stage control unit 202. In some embodiments, when the transistor T12 is turned on according to the start signal ST (for example, the start signal ST has a high voltage), the transistor T12 transmits the start signal ST to the control terminal of the transistor T11. In this way, the transistor T11 is turned on according to the start signal ST. Then, the transistor T11 transmits the first constant voltage VGH as the first-level control signal Q (1). At this time, the first-level control signal Q (1) corresponds to the first constant voltage VGH.

在步驟S730中,藉由第1級控制單元202的電晶體T13依據下拉訊號(例如:第1級時脈訊號HC(1))以及第二定電壓VGL下拉第1級控制單元202的電晶體T11的控制端的電壓位準。在一些實施例中,電晶體T13依據第1級時脈訊號HC(1)導通(例如:第1級時脈訊號HC(1)具有高電壓)時,電晶體T13 將操作節點N(1)的電壓位準下拉至第二定電壓VGL。如此,電晶體T11截止。 In step S730, the transistor T13 of the first-stage control unit 202 pulls down the transistor of the first-stage control unit 202 according to the pull-down signal (for example, the first-stage clock signal HC (1)) and the second constant voltage VGL. Voltage level of the control terminal of T11. In some embodiments, the transistor T13 is turned on according to the first-stage clock signal HC (1) (eg, when the first-stage clock signal HC (1) has a high voltage), the transistor T13 is turned on. Pull down the voltage level of the operating node N (1) to the second constant voltage VGL. In this way, the transistor T11 is turned off.

在步驟S740中,藉由第1級移位暫存電路140(1)依據第1級控制訊號Q(1)輸出第1級移位訊號G(1)。在一些實施例中,第1級移位暫存電路140(1)接收第1級控制訊號Q(1)、第1級時脈訊號HC(1)、操作訊號LC1以及操作訊號LC2,以依據上述該些訊號輸出第1級移位訊號G(1)。 In step S740, the first-stage shift register circuit 140 (1) outputs the first-stage shift signal G (1) according to the first-stage control signal Q (1). In some embodiments, the first-stage shift register circuit 140 (1) receives the first-stage control signal Q (1), the first-stage clock signal HC (1), the operation signal LC1, and the operation signal LC2 according to The above signals output the first-stage shift signal G (1).

上述敘述中的控制方法700包含示例性的操作,但該些操作不必依上述順序被執行。按照本揭示內容的精神與範圍,本揭示內容的控制方法700中的操作的順序能夠被改變,或者該些操作能夠視情況地同時或部分同時被執行。 The control method 700 in the above description includes exemplary operations, but these operations need not be performed in the above order. According to the spirit and scope of the present disclosure, the order of operations in the control method 700 of the present disclosure can be changed, or these operations can be performed simultaneously or partially simultaneously as the case may be.

綜上所述,透過應用上述至少一實施例,可使前幾級控制訊號(例如:Q(n))的漏電程度近乎相同,進而改善局部亮暗線的問題。 In summary, by applying the at least one embodiment described above, the leakage levels of the first few control signals (for example, Q (n)) can be nearly the same, thereby improving the problem of local bright and dark lines.

雖然本揭示已以實施方式揭露如上,然其並非用以限定本揭示,任何本領域具通常知識者,在不脫離本揭示之精神和範圍內,當可作各種之更動與潤飾,因此本揭示之保護範圍當視後附之申請專利範圍所界定者為準。 Although this disclosure has been disclosed as above in the form of implementation, it is not intended to limit this disclosure. Any person with ordinary knowledge in the field can make various changes and modifications without departing from the spirit and scope of this disclosure. Therefore, this disclosure The scope of protection shall be determined by the scope of the attached patent application.

Claims (8)

一種移位暫存器,包含:一控制電路,包含一第1級控制單元,該第1級控制單元包含:一第一電晶體,輸出一第1級控制訊號;一第二電晶體,依據一起始訊號導通該第一電晶體;以及一第三電晶體,依據一第1級下拉訊號截止該第一電晶體,其中該第二電晶體與該第三電晶體耦接於一操作節點,該第一電晶體的一控制端與該操作節點具有相同的電壓位準;以及一移位暫存電路,依據該第1級控制訊號輸出一第1級移位訊號;其中該起始訊號的一下降邊緣於時序上早於該第1級下拉訊號的一下降邊緣。A shift register includes: a control circuit including a first-level control unit; the first-level control unit includes: a first transistor that outputs a first-level control signal; a second transistor, according to An initial signal turns on the first transistor; and a third transistor, the first transistor is turned off according to a first-level pull-down signal, wherein the second transistor and the third transistor are coupled to an operation node, A control terminal of the first transistor has the same voltage level as the operation node; and a shift temporary storage circuit, which outputs a first-stage shift signal according to the first-stage control signal; A falling edge is earlier in timing than a falling edge of the level 1 pull-down signal. 如請求項1所述的移位暫存器,其中該控制電路輸出該第1級控制訊號至一第k級控制訊號,該起始訊號的該下降邊緣於時序上對齊於一第k級下拉訊號的一上升邊緣,其中k為一正整數。The shift register according to claim 1, wherein the control circuit outputs the first-level control signal to a k-level control signal, and the falling edge of the start signal is aligned with a k-level pull-down in time sequence. A rising edge of the signal, where k is a positive integer. 如請求項1所述的移位暫存器,其中該第1級下拉訊號為該第1級移位訊號。The shift register according to claim 1, wherein the first-level pull-down signal is the first-level shift signal. 如請求項1所述的移位暫存器,其中該控制電路輸出該第1級控制訊號至一第k級控制訊號,且該移位暫存電路包含:一驅動電路,依據一第1級時脈訊號輸出該第1級移位訊號;一上拉電路,包含一內部節點且依據該第1級時脈訊號輸出一第(1+k)級控制訊號;一第一下拉電路,下拉該第1級控制訊號以及該第1級移位訊號;一第二下拉電路,下拉該第1級控制訊號以及該第1級移位訊號;以及一第三下拉電路,下拉該第1級控制訊號以及該第1級移位訊號,其中該第1級下拉訊號與該內部節點具有相同的電壓位準,其中k為一正整數。The shift register according to claim 1, wherein the control circuit outputs the first-level control signal to a k-th control signal, and the shift temporary storage circuit includes: a driving circuit according to a first stage The clock signal outputs the first-level shift signal; a pull-up circuit including an internal node and outputs a (1 + k) -level control signal according to the first-level clock signal; a first pull-down circuit, pull-down The first-level control signal and the first-level shift signal; a second pull-down circuit that pulls down the first-level control signal and the first-level shift signal; and a third pull-down circuit that pulls down the first-level control Signal and the first-stage shift signal, wherein the first-stage pull-down signal has the same voltage level as the internal node, where k is a positive integer. 如請求項4所述的移位暫存器,其中該上拉電路包含:一第四電晶體,該第四電晶體的一第一端接收該第1級時脈訊號,該第四電晶體的一第二端耦接於該內部節點;以及一第五電晶體,該第五電晶體的一第一端輸出該第(1+k)級控制訊號,該第五電晶體的一控制端耦接於該內部節點。The shift register according to claim 4, wherein the pull-up circuit includes: a fourth transistor, a first end of the fourth transistor receives the first-stage clock signal, and the fourth transistor A second terminal is coupled to the internal node; and a fifth transistor, a first terminal of the fifth transistor outputs the (1 + k) level control signal, and a control terminal of the fifth transistor Coupled to the internal node. 如請求項1所述的移位暫存器,其中該第一電晶體接收一第一定電壓,該第三電晶體接收一第二定電壓,且該第一定電壓高於該第二定電壓。The shift register according to claim 1, wherein the first transistor receives a first constant voltage, the third transistor receives a second constant voltage, and the first constant voltage is higher than the second constant voltage. Voltage. 如請求項1所述的移位暫存器,其中該第二電晶體的一控制端接收該起始訊號,該第二電晶體的一端耦接該第二電晶體的該控制端。The shift register according to claim 1, wherein a control terminal of the second transistor receives the start signal, and one end of the second transistor is coupled to the control terminal of the second transistor. 一種移位暫存器的控制方法,包含:藉由一第一電晶體依據一起始訊號將相應於一第一定電壓的一控制訊號傳輸至一移位暫存電路;藉由一第二電晶體將該起始訊號傳輸至該第一電晶體的一控制端;藉由一第三電晶體依據一下拉訊號以及一第二定電壓下拉該第一電晶體的該控制端的一電壓位準;以及藉由該移位暫存電路依據該控制訊號輸出一移位訊號;其中該起始訊號的一下降邊緣於時序上早於該下拉訊號的一下降邊緣。A control method for a shift register includes: transmitting a control signal corresponding to a first constant voltage to a shift register circuit by a first transistor according to a start signal; and using a second transistor The crystal transmits the start signal to a control terminal of the first transistor; a third transistor pulls down a voltage level of the control terminal of the first transistor according to a pull signal and a second constant voltage; And outputting a shift signal according to the control signal by the shift register circuit; wherein a falling edge of the start signal is earlier in timing than a falling edge of the pull-down signal.
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