TWI640437B - Laminate and application thereof - Google Patents

Laminate and application thereof Download PDF

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TWI640437B
TWI640437B TW103128020A TW103128020A TWI640437B TW I640437 B TWI640437 B TW I640437B TW 103128020 A TW103128020 A TW 103128020A TW 103128020 A TW103128020 A TW 103128020A TW I640437 B TWI640437 B TW I640437B
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group
adhesive layer
polymerizable monomer
resin
polymerizable
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TW103128020A
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TW201507862A (en
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岩井悠
小山一郎
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富士軟片股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/06Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/28Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/288Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyketones
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00Layered products comprising a layer of synthetic resin
    • B32B27/36Layered products comprising a layer of synthetic resin comprising polyesters
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form
    • B32B3/02Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by features of form at particular places, e.g. in edge regions
    • B32B3/08Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by added members at particular parts
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • C09J7/381Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/14Semiconductor wafers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386Separation by peeling

Abstract

本發明提供於對被處理構件施予機械或化學處理之際,可藉由高接著力來暫時支撐被處理構件,同時不對處理過構件造成損傷,可容易地解除對於處理過構件之暫時支撐之積層體、保護層形成用組成物、接著劑層前驅物或接著劑層形成用組成物、及其套組。 The present invention provides that when a mechanical or chemical treatment is applied to a member to be treated, the member to be treated can be temporarily supported by a high adhesion force without causing damage to the treated member, and the temporary support for the treated member can be easily released. The laminate, the protective layer forming composition, the adhesive layer precursor or the adhesive layer forming composition, and a kit thereof.

該積層體係在(A)支撐體上依順序具有(B)接著劑層前驅物、(C)保護層、(D)裝置晶圓,上述(B)接著劑層前驅物包含(b-1)聚合性單體及/或聚合性寡聚物,且聚合性單體及/或聚合性寡聚物之聚合率為10~70%。 The build-up system has (B) an adhesive layer precursor, (C) a protective layer, and (D) device wafer on the (A) support, and the (B) adhesive layer precursor contains (b-1) The polymerizable monomer and/or the polymerizable oligomer, and the polymerization ratio of the polymerizable monomer and/or the polymerizable oligomer is 10 to 70%.

Description

積層體及其應用 Laminated body and its application

本發明關於積層體、保護層形成用組成物、接著劑層前驅物或接著劑層形成用組成物及其套組。更詳細地,關於使用半導體裝置製造用暫時接著劑暫時接合於接著性支撐體之積層體、用於其之保護層形成用組成物、接著劑層前驅物或接著劑層形成用組成物、及包含前述保護層形成用組成物與接著劑層前驅物或接著劑層形成用組成物之套組。 The present invention relates to a laminate, a protective layer forming composition, an adhesive layer precursor or an adhesive layer forming composition, and a kit thereof. More specifically, a laminate for temporarily bonding to an adhesive support using a temporary adhesive for semiconductor device manufacturing, a composition for forming a protective layer, an adhesive layer precursor or a composition for forming an adhesive layer, and The kit comprising the protective layer forming composition and the adhesive layer precursor or the adhesive layer forming composition.

以往,於IC(積體電路)或LSI(大型積體電路)等之半導體裝置之製程中,通常在半導體矽晶圓上形成多數的IC晶片,藉由切割而單片化。 Conventionally, in a semiconductor device such as an IC (integrated circuit) or an LSI (large integrated circuit), a large number of IC chips are usually formed on a semiconductor germanium wafer, and are singulated by dicing.

隨著電子機器之更小型化及高性能化之需求,對於搭載於電子機器的IC晶片,亦要求更小型化及高積體化,但矽基板之面方向中的積體電路之高積體化係接近極限。 With the demand for further miniaturization and high performance of electronic devices, IC chips mounted on electronic devices are also required to be smaller and more integrated, but the integrated circuits in the surface direction of the substrate are highly integrated. The chemical system is close to the limit.

作為從IC晶片內的積體電路來對IC晶片的外部端子之電性連接方法,以往廣泛已知線接合法,但為了謀求IC晶片的小型化,近年來已知在矽基板中設置貫通孔,以將作為外部端子的金屬插塞(plug)貫穿貫通孔內 之方式連接於積體電路之方法(所謂形成矽貫通電極(TSV)之方法)。然而,以僅形成矽貫通電極之方法,對於上述近年之IC晶片,並無法充分應付進一步之高積體化的需求。 A wire bonding method has been widely known as an electrical connection method for an external terminal of an IC chip from an integrated circuit in an IC chip. However, in order to reduce the size of the IC wafer, it has been known in recent years to provide a through hole in the germanium substrate. To insert a metal plug as an external terminal through the through hole A method of connecting to an integrated circuit (a method of forming a through-electrode (TSV)). However, in the method of forming only the tantalum penetration electrode, the above-mentioned IC wafer of recent years cannot sufficiently cope with the demand for further high integration.

鑑於以上,已知藉由將IC晶片內的積體電路予以多層化,提高矽基板的每單位面積之積體度的技術。然而,由於積體電路之多層化係使IC晶片之厚度增大,必須將構成IC晶片的構件予以薄型化。作為如此的構件之薄型化,例如檢討矽基板之薄型化,不僅與IC晶片的小型化有關聯,而且從可將矽貫通電極之製造中的矽基板之貫通孔製程予以省力化來看,被認為有希望。 In view of the above, it is known to increase the total body area per unit area of the tantalum substrate by multilayering the integrated circuits in the IC wafer. However, since the multilayering of the integrated circuit increases the thickness of the IC wafer, it is necessary to reduce the thickness of the members constituting the IC wafer. In order to reduce the thickness of the ruthenium substrate, for example, it is not only related to the miniaturization of the IC wafer, but also the labor-saving process of the ruthenium substrate in the manufacture of the ruthenium-through electrode is saved. I think there is hope.

作為半導體裝置之製程中使用的半導體矽晶圓,廣泛已知具有約700~900μm的厚度者,但近年來以IC晶片的小型化等為目的,嘗試將半導體矽晶圓之厚度減薄至200μm以下為止。 A semiconductor wafer used in the process of a semiconductor device is widely known to have a thickness of about 700 to 900 μm. However, in recent years, attempts have been made to reduce the thickness of a semiconductor wafer to 200 μm for the purpose of miniaturization of an IC wafer. So far.

然而,厚度200μm以下之半導體矽晶圓係非常薄,進而以此作為基材的半導體裝置製造用構件亦非常薄,故在對於如此的構件施予進一步的處理,或僅將如此的構件移動之情況等中,安定地且不造成損傷地支撐構件者係困難。 However, a semiconductor germanium wafer having a thickness of 200 μm or less is very thin, and the member for manufacturing a semiconductor device using the substrate as a base material is also very thin, so that further processing is performed on such a member, or only such a member is moved. In the case or the like, it is difficult to support the member stably and without causing damage.

為了解決如上述之問題,已知藉由矽氧黏著劑來暫時接著在表面上設有裝置的薄型化前之半導體晶圓與加工用支撐基板,研削半導體晶圓之背面而薄型化後,將半導體晶圓穿孔而設置矽貫通電極,然後自半導體晶圓使加工用支撐基板脫離之技術(參照專利文獻1) 。藉由此技術,可同時達成半導體晶圓的背面研削時之耐研削阻力、異向性乾蝕刻步驟等中的耐熱性、鍍敷或蝕刻時的耐藥品性、與最終的加工用支撐基板之平順地剝離及低被附體污染性。 In order to solve the above problems, it is known that the semiconductor wafer and the processing support substrate which are thinned before the device is provided on the surface by the oxygen-adhesive adhesive, and the back surface of the semiconductor wafer is ground and thinned. A technique in which a semiconductor wafer is perforated and a through electrode is provided, and the processing support substrate is detached from the semiconductor wafer (see Patent Document 1) . According to this technique, it is possible to simultaneously achieve heat resistance during the back grinding of the semiconductor wafer, heat resistance in the anisotropic dry etching step, chemical resistance during plating or etching, and final processing support substrate. Smooth peeling and low contamination of the attached body.

又,作為晶圓之支撐方法,亦已知藉由支撐層系統來支撐晶圓之方法,使由電漿堆積法所得之電漿聚合物層作為分離層介於晶圓與支撐層系統之間,使支撐層系統與分離層之間的接著結合大於晶圓與分離層之間的接合結合,於自支撐層系統脫離晶圓之際,以晶圓容易地自分離層脫離之方式而構成的技術(參照專利文獻2)。 Moreover, as a method of supporting a wafer, a method of supporting a wafer by a support layer system is also known, wherein a plasma polymer layer obtained by a plasma deposition method is used as a separation layer between a wafer and a support layer system. The bonding between the support layer system and the separation layer is greater than the bonding between the wafer and the separation layer, and when the self-supporting layer system is detached from the wafer, the wafer is easily separated from the separation layer. Technology (refer to Patent Document 2).

又,已知使用聚醚碸與賦黏劑進行暫時接著,藉由加熱而解除暫時接著之技術(參照專利文獻3)。 Further, it is known to use a technique in which a polyether oxime and a binder are temporarily used to release the temporary adhesion by heating (see Patent Document 3).

另外,亦已知藉由羧酸類與胺類所成之混合物進行暫時接著,藉由加熱而解除暫時接著之技術(參照專利文獻4)。 Further, a technique in which a mixture of a carboxylic acid and an amine is temporarily followed by a heating and a temporary release is also known (see Patent Document 4).

還有,已知於將由纖維素聚合物類等所成之接合層予以加溫之狀態下,壓合裝置晶圓與支撐基板而使接著,藉由在加溫下橫向地滑動,而自支撐基板脫離裝置晶圓之技術(參照專利文獻5)。 Further, it is known that a bonding layer formed of a cellulose polymer or the like is heated, and the wafer of the device and the supporting substrate are pressed together, and then self-supporting by sliding laterally under heating A technique in which a substrate is detached from a device wafer (see Patent Document 5).

又,已知由對排1,2-聚丁二烯與光聚合引發劑所構成,因放射線之照射而接著力變化之黏著薄膜(參照專利文獻6)。 Further, an adhesive film comprising a pair of 1,2-polybutadiene and a photopolymerization initiator and having a subsequent change in force by irradiation of radiation is known (see Patent Document 6).

再者,已知藉由聚碳酸酯類所成之接著劑,暫時接著支撐基板與半導體晶圓,對半導體晶圓進行處理後, 照射輻照線,其次藉由加熱,自支撐基板脫離處理過的半導體晶圓之技術(參照專利文獻7)。 Furthermore, it is known that the substrate and the semiconductor wafer are temporarily supported by an adhesive made of a polycarbonate, and the semiconductor wafer is processed. A technique of irradiating an irradiation line and secondarily removing the processed semiconductor wafer from the support substrate by heating (refer to Patent Document 7).

另外,已知以軟化點不同2層來暫時接著支撐基板與半導體晶圓,對於半導體晶圓進行處理後,藉由在加溫下橫向地滑動,而脫離支撐基板與半導體晶圓之技術(參照專利文獻8)。 In addition, it is known that the substrate and the semiconductor wafer are temporarily supported by two layers having different softening points, and after the semiconductor wafer is processed, the substrate and the semiconductor wafer are separated from each other by heating under temperature (see Patent Document 8).

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2011-119427號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-119427

[專利文獻2]日本特表2009-528688號公報 [Patent Document 2] Japanese Patent Publication No. 2009-528688

[專利文獻3]日本特開2011-225814號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2011-225814

[專利文獻4]日本特開2011-052142號公報 [Patent Document 4] Japanese Patent Publication No. 2011-052142

[專利文獻5]日本特表2010-506406號公報 [Patent Document 5] Japanese Patent Publication No. 2010-506406

[專利文獻6]日本特開2007-045939號公報 [Patent Document 6] Japanese Patent Laid-Open Publication No. 2007-045939

[專利文獻7]美國專利公開2011/0318938號說明書 [Patent Document 7] US Patent Publication No. 2011/0318938

[專利文獻8]美國專利公報2012/0034437號說明書 [Patent Document 8] US Patent Publication No. 2012/0034437

可是,於將設有裝置的半導體晶圓之表面(即裝置晶圓之裝置面)與支撐基板(載體基板),經由專利文獻1等所知之由黏著劑所成的層予以暫時接著時,為了穩定地支撐半導體晶圓,在黏著劑層要求一定強度的黏著度。 However, when the surface of the semiconductor wafer on which the device is provided (that is, the device surface of the device wafer) and the support substrate (carrier substrate) are temporarily surrounded by a layer made of an adhesive known from Patent Document 1 or the like, In order to stably support the semiconductor wafer, a certain degree of adhesion is required in the adhesive layer.

因此,於經由黏著劑層暫時接著半導體晶圓的裝置 面之全面與支撐體時,使半導體晶圓與支撐體之暫時接著愈充分,可愈穩定地且不造成損傷地支撐半導體晶圓,但另一方面,由於半導體晶圓與支撐體之暫時接著過強,於自支撐體脫離半導體晶圓之際,容易發生裝置破損,或裝置自半導體晶圓脫離之不良狀況。 Therefore, the device for temporarily stopping the semiconductor wafer via the adhesive layer When the surface is fully integrated with the support, the semiconductor wafer and the support are temporarily more fully supported, and the semiconductor wafer can be supported more stably and without damage, but on the other hand, the semiconductor wafer and the support are temporarily attached. Too strong, when the self-supporting body is detached from the semiconductor wafer, the device is easily damaged or the device is detached from the semiconductor wafer.

又,如專利文獻2,為了抑制晶圓與支撐層系統之接著變過強,在晶圓與支撐層系統之間,藉由電漿堆積法形成作為分離層的電漿聚合物層之方法,係有以下等之問題:(1)通常實施電漿堆積法用的設備成本大;(2)藉由電漿堆積法的層形成係在電漿裝置內的真空化或單體的堆積中需要時間;及(3)設置由電漿聚合物層所構成的分離層,支撐供加工的晶圓時,雖然晶圓與分離層之接著結合為充分,但另一方面於解除晶圓的支撐時,不容易控制在晶圓容易自分離層脫離之接著結合。 Further, as disclosed in Patent Document 2, in order to suppress the subsequent deformation of the wafer and the support layer system, a method of forming a plasma polymer layer as a separation layer by a plasma deposition method between the wafer and the support layer system is performed. There are the following problems: (1) the equipment used for the plasma deposition method is generally expensive; (2) the layer formation by the plasma deposition method is required for vacuuming or stacking of monomers in the plasma apparatus. And (3) providing a separation layer composed of a plasma polymer layer to support the wafer to be processed, although the wafer and the separation layer are subsequently bonded sufficiently, but on the other hand, when the wafer is unsupported It is not easy to control the subsequent bonding in which the wafer is easily detached from the separation layer.

另外,如專利文獻3、4、5、8記載,於藉由加熱來解除暫時接著之方法中,在脫離半導體晶圓之際,容易發生裝置破損之不良狀況。 Further, as described in Patent Documents 3, 4, 5, and 8, in the method of releasing the temporary contact by heating, when the semiconductor wafer is detached, the device is likely to be damaged.

還有,如專利文獻6、7,於照射輻照線而解除暫時接著之方法中,必須使用能穿透輻照線的支撐體。 Further, as in Patent Documents 6 and 7, in the method of irradiating the irradiation line and releasing the temporary connection, it is necessary to use a support which can penetrate the irradiation line.

再者,如專利文獻8,於半導體晶圓側之接合層的軟化點比基板側之接合層的軟化點還大20℃以上時,在剝離後基板側的接合層轉印至半導體晶圓側之接合層,發生半導體晶圓的洗淨性降低之問題。 Further, in Patent Document 8, when the softening point of the bonding layer on the semiconductor wafer side is larger than the softening point of the bonding layer on the substrate side by 20 ° C or more, the bonding layer on the substrate side after the peeling is transferred to the semiconductor wafer side The bonding layer causes a problem that the detergency of the semiconductor wafer is lowered.

本發明係鑒於上述背景而完成者,其目的在 於提供於對被處理構件(半導體晶圓等)施予機械或化學處理之際,可藉由高接著力來暫時支撐被處理構件,更且即使經過真空、高溫的製程後,也不對處理過構件造成損傷,可容易地(以高剝離性)解除對於處理過構件之暫時支撐之積層體、保護層形成用組成物、接著劑層前驅物或接著劑層形成用組成物、及其套組。 The present invention has been completed in view of the above background, and its purpose is When it is provided for mechanical or chemical treatment of a member to be processed (semiconductor wafer, etc.), the member to be processed can be temporarily supported by a high adhesion force, and even after a vacuum or high temperature process, it is not treated. When the member is damaged, the laminate for the temporary support of the treated member, the protective layer forming composition, the adhesive layer precursor or the adhesive layer forming composition, and the set thereof can be easily released (with high peeling property) .

本發明者們為了解決上述問題而專心致力地檢討,結果發現:使用一種積層體,其係在(A)支撐體上依順序具有(B)接著劑層前驅物、(C)保護層、(D)裝置晶圓,前述(B)包含(b-1)聚合性單體及/或聚合性寡聚物,且聚合性單體及/或聚合性寡聚物之聚合率為10~70%,則可藉由高接著力來暫時支撐裝置晶圓與支撐體,同時可容易地解除裝置晶圓之暫時支撐,終於完成本發明。 The present inventors have intensively reviewed in order to solve the above problems, and as a result, found that a laminate having (B) an adhesive layer precursor and (C) a protective layer in order (A) is sequentially used. D) device wafer, the above (B) comprising (b-1) a polymerizable monomer and/or a polymerizable oligomer, and a polymerization ratio of the polymerizable monomer and/or the polymerizable oligomer is 10 to 70% The present invention can be finally completed by temporarily supporting the device wafer and the support by a high adhesion force while easily releasing the temporary support of the device wafer.

不受任何理論所拘泥,但於本發明之積層體中,藉由聚合性單體及/或聚合性寡聚物之聚合物,在保護層與接著劑前驅物(聚合性單體及/或聚合性寡聚物之聚合物與聚合性單體及/或聚合性寡聚物之混合物)界面發揮適度的錨固效果,及在接著後更進行聚合,而可高地設置接著劑層之彈性模數,故可使晶圓薄化時的接著性與薄化後的剝離性並存。 Without being bound by any theory, in the laminate of the present invention, a protective layer and an adhesive precursor (polymerizable monomer and/or) are used as a polymer of a polymerizable monomer and/or a polymerizable oligomer. The interface between the polymer of the polymerizable oligomer and the polymerizable monomer and/or the polymerizable oligomer) exhibits an appropriate anchoring effect, and further polymerization is carried out after that, and the elastic modulus of the adhesive layer can be set high. Therefore, the adhesion at the time of thinning the wafer and the peeling property after thinning can coexist.

基於以上之見解,發現可形成接著性高且剝離容易之接著性層,終於完成本發明。 Based on the above findings, it was found that an adhesive layer having high adhesion and easy peeling can be formed, and the present invention has finally been completed.

具體地,藉由下述手段<1>,更為藉由<2>~<23>,而解決上述問題。 Specifically, the above problem is solved by the following means <1> and more by <2> to <23>.

<1>一種積層體,其係在(A)支撐體上依順序具有(B)接著劑層前驅物、(C)保護層、(D)裝置晶圓,(B)接著劑層前驅物包含(b-1)聚合性單體及/或聚合性寡聚物,且聚合性單體及/或聚合性寡聚物之聚合率為10~70%。 <1> A laminate comprising (B) an adhesive layer precursor, (C) a protective layer, (D) device wafer, and (B) an adhesive layer precursor, in order, on the (A) support. (b-1) A polymerizable monomer and/or a polymerizable oligomer, and a polymerization ratio of a polymerizable monomer and/or a polymerizable oligomer is 10 to 70%.

<2>如<1>記載之積層體,其中(b-1)聚合性單體及/或聚合性寡聚物包含至少1種之3官能以上的自由基聚合性單體。 <2> The layered product according to <1>, wherein the (b-1) polymerizable monomer and/or the polymerizable oligomer contains at least one of three or more functional groups of a radical polymerizable monomer.

<3>如<1>或<2>記載之積層體,其中(b-1)聚合性單體及/或聚合性寡聚物包含至少1種之具有氟原子及/或矽原子的自由基聚合性化合物。 <3> The laminate according to <1> or <2>, wherein (b-1) the polymerizable monomer and/or the polymerizable oligomer contains at least one kind of radical having a fluorine atom and/or a ruthenium atom. Polymeric compound.

<4>如<1>至<3>中任一項記載之積層體,其中(b-1)聚合性單體及/或聚合性寡聚物包含2官能以下的自由基聚合性單體及3官能以上的自由基聚合性單體。 The layered product according to any one of the above aspects, wherein the (b-1) polymerizable monomer and/or the polymerizable oligomer contains a bifunctional or less radical polymerizable monomer and A trifunctional or higher radical polymerizable monomer.

<5>如<1>至<4>中任一項記載之積層體,其中接著劑層前驅物更含有(b-2)光自由基引發劑。 The laminate according to any one of <1> to <4> wherein the adhesive layer precursor further contains (b-2) a photo radical initiator.

<6>如<1>至<4>中任一項記載之積層體,其中接著劑層前驅物更含有(b-3)熱自由基引發劑。 The laminate according to any one of <1> to <4> wherein the adhesive layer precursor further contains (b-3) a thermal radical initiator.

<7>如<1>至<6>中任一項記載之積層體,其中接著劑層前驅物更含有(b-4)高分子化合物。 The laminate according to any one of <1> to <6> wherein the adhesive layer precursor further contains (b-4) a polymer compound.

<8>一種積層體,其係在(A)支撐體上依順序具有(B2)接著劑層、(C)保護層、(D)裝置晶圓,(B2)接著劑層係接著劑層前驅物之硬化物,接著劑層前驅物包含(b-1)聚合性單體及/或聚合性寡聚物,且聚合性單體及/或聚合性寡聚物之聚合率為10~70%。 <8> A laminate comprising (B2) an adhesive layer, (C) a protective layer, (D) device wafer, and (B2) an adhesive layer-based adhesive layer precursor on the (A) support. The cured product of the material, the adhesive layer precursor contains (b-1) a polymerizable monomer and/or a polymerizable oligomer, and the polymerization ratio of the polymerizable monomer and/or the polymerizable oligomer is 10 to 70%. .

<9>如<1>至<8>中任一項記載之積層體,其中 (C)保護層之軟化點為170℃以上250℃以下。 <9> The laminated body according to any one of <1> to <8>, wherein (C) The softening point of the protective layer is 170 ° C or more and 250 ° C or less.

<10>如<1>至<9>中任一項記載之積層體,其中(C)保護層係熱塑性樹脂。 The laminated body according to any one of <1> to <9> wherein the (C) protective layer is a thermoplastic resin.

<11>如<1>至<10>中任一項記載之積層體,其中(C)保護層包含由聚醚碸樹脂、聚醯亞胺樹脂、聚酯樹脂、聚苯并咪唑樹脂、聚醯胺醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂及聚醚醚酮樹脂中選出的至少1種之熱塑性樹脂。 The laminate according to any one of <1> to <10> wherein the (C) protective layer comprises a polyether oxime resin, a polyimide resin, a polyester resin, a polybenzimidazole resin, and a poly At least one thermoplastic resin selected from the group consisting of an amidoxime resin, a polycarbonate resin, a polystyrene resin, and a polyetheretherketone resin.

<12>如<1>至<11>中任一項記載之積層體,其中(D)裝置晶圓係在表面上具有高度1μm以上150μm以下的構造體。 The laminated body according to any one of <1> to <11> wherein the (D) device wafer has a structure having a height of 1 μm or more and 150 μm or less on the surface.

<13>一種保護層形成用組成物,其係製造如<1>至<12>中任一項記載之積層體的保護層用之保護層形成用組成物,且包含樹脂與溶劑。 The composition for forming a protective layer for a protective layer of a laminate according to any one of the above aspects, which comprises a resin and a solvent.

<14>如<13>記載之保護層形成用組成物,其中樹脂之軟化點為170℃以上250℃以下。 <14> The composition for forming a protective layer according to <13>, wherein the softening point of the resin is 170 ° C or more and 250 ° C or less.

<15>一種組成物,其係製造如<1>至<7>及<9>至<12>中任一項記載之積層體的接著劑層前驅物或如<8>記載之接著劑層用之組成物,且包含溶劑與(b-1)聚合性單體及/或聚合性寡聚物。 <15> A composition layer precursor of the laminate according to any one of <1> to <7> and <9> to <12> or an adhesive layer as described in <8>. The composition used includes a solvent and (b-1) a polymerizable monomer and/or a polymerizable oligomer.

<16>如<15>記載之組成物,其中(b-1)聚合性單體及/或聚合性寡聚物包含至少1種之3官能以上的自由基聚合性單體。 <16> The composition according to <15>, wherein the (b-1) polymerizable monomer and/or the polymerizable oligomer contains at least one of three or more functionalized radical polymerizable monomers.

<17>如<15>或<16>記載之組成物,其中(b-1)聚合性單體及/或聚合性寡聚物包含至少1種之具有氟原 子及/或矽原子的自由基聚合性化合物。 <17> The composition according to <15> or <16>, wherein (b-1) the polymerizable monomer and/or the polymerizable oligomer contains at least one of having a fluorine atom A radically polymerizable compound of a sub and/or a ruthenium atom.

<18>如<15>至<17>中任一項記載之組成物,其中(b-1)聚合性單體及/或聚合性寡聚物包含2官能以下的自由基聚合性單體及3官能以上的自由基聚合性單體。 The composition according to any one of <15>, wherein the (b-1) polymerizable monomer and/or polymerizable oligomer contains a bifunctional or less radical polymerizable monomer and A trifunctional or higher radical polymerizable monomer.

<19>如<15>至<18>中任一項記載之組成物,其更含有(b-2)光自由基引發劑。 <19> The composition according to any one of <15> to <18> which further contains (b-2) a photo radical initiator.

<20>如<15>至<18>中任一項記載之組成物,其更包含(b-3)熱自由基引發劑。 <20> The composition according to any one of <15> to <18> which further comprises (b-3) a thermal radical initiator.

<21>如<15>至<20>中任一項記載之組成物,其更包含(b-4)高分子化合物。 The composition according to any one of <15> to <20> which further comprises (b-4) a polymer compound.

<22>一種套組,其包含:含有樹脂與溶劑的保護層形成用組成物;及,含有溶劑與聚合性單體及/或聚合性寡聚物的接著劑層前驅物或接著劑層形成用組成物。 <22> A kit comprising: a protective layer forming composition containing a resin and a solvent; and an adhesive layer precursor or an adhesive layer containing a solvent and a polymerizable monomer and/or a polymerizable oligomer Use the composition.

<23>如<22>記載之套組,其係製造如<1>至<12>中任一項記載之積層體用之套組。 <23> The kit for a laminate according to any one of <1> to <12>, wherein the kit according to any one of <1> to <12>.

依照本發明,可提供在對被處理構件施予機械或化學處理之際,可藉由高接著力來暫時支撐被處理構件,同時不對處理過構件造成損傷,可容易地解除對於處理過構件之暫時支撐之積層體、保護層形成用組成物、接著劑層前驅物或接著劑層形成用組成物、及其套組。 According to the present invention, it is possible to temporarily support the member to be processed by a high adhesion force while imparting mechanical or chemical treatment to the member to be treated, while not causing damage to the treated member, and the member for the treated member can be easily released. The laminate, the protective layer forming composition, the adhesive layer precursor or the adhesive layer forming composition, and the kit thereof, which are temporarily supported.

11‧‧‧接著劑層前驅物形成用組成物 11‧‧‧Adhesive layer precursor composition

12‧‧‧支撐體(載體基板) 12‧‧‧Support (carrier substrate)

13‧‧‧接著性層前驅物 13‧‧‧Adhesive layer precursor

60‧‧‧裝置晶圓 60‧‧‧ device wafer

60’‧‧‧薄型裝置晶圓 60'‧‧‧ Thin device wafer

61’‧‧‧矽基板 61'‧‧‧矽 substrate

61a‧‧‧矽基板之表面 61a‧‧‧矽 Surface of the substrate

61b‧‧‧矽基板之背面 61b‧‧‧矽 on the back of the substrate

61b’‧‧‧薄型裝置晶圓之背面 61b’‧‧‧The back of the thin device wafer

62‧‧‧裝置晶片 62‧‧‧ device wafer

63‧‧‧凸塊 63‧‧‧Bumps

71‧‧‧保護層 71‧‧‧Protective layer

100、100’‧‧‧接著性支撐體 100,100'‧‧‧adhesive support

第1圖之第1圖(A)、第1圖(B)、第1圖(C)、第1圖(D) 、第1圖(E)、第1圖(F)各自係說明支撐體與裝置晶圓之暫時接著之示意截面圖,顯示暫時接著於支撐體的裝置晶圓經薄型化之狀態、已剝離支撐體與裝置晶圓之狀態、及支撐體與裝置晶圓的表面之洗淨後狀態之示意截面圖。 Fig. 1 (A), Fig. 1 (B), Fig. 1 (C), and Fig. 1 (D) FIG. 1(E) and FIG. 1(F) are schematic cross-sectional views showing the temporary connection of the support and the device wafer, respectively, showing that the device wafer temporarily attached to the support is thinned and the support is peeled off. A schematic cross-sectional view of the state of the body and the device wafer, and the state of the surface of the support and the wafer of the device.

第2圖係說明接著性支撐體與裝置晶圓之暫時接著狀態的解除之示意截面圖。 Fig. 2 is a schematic cross-sectional view showing the release of the temporary support state of the adhesive support and the device wafer.

[實施發明之形態] [Formation of the Invention]

以下,詳細說明本發明之實施形態。 Hereinafter, embodiments of the present invention will be described in detail.

於本說明書的基(原子團)之記述中,沒有記載取代及無取代之記述係亦包含不具取代基者連同具有取代基者。例如,所謂的「烷基」,不僅是不具有取代基的烷基(無取代烷基),亦包含具有取代基的烷基(取代烷基)。 In the description of the radical (atomic group) of the present specification, the description of the substituent and the unsubstituted is also not included, and the substituent is not included. For example, the "alkyl group" is not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).

本說明書中的「活性光線」或「放射線」,例如意指包含可見光線、紫外線、遠紫外線、電子線、X射線等者。又,本發明中所謂的「光」,就是意指活性光線或放射線。 The "active light" or "radiation" in the present specification means, for example, visible light, ultraviolet light, far ultraviolet light, electron light, X-ray, or the like. Further, the term "light" as used in the present invention means active light or radiation.

又,本說明書中所謂的「曝光」,只要沒有特別預先指明,則不僅是水銀燈、紫外線、準分子雷射所代表的遠紫外線、X射線、EUV光等之曝光,亦意指藉由電子線及離子束等的粒子線之描繪。 In addition, the term "exposure" as used in the present specification means not only exposure of far ultraviolet rays, X-rays, EUV lights, etc. represented by mercury lamps, ultraviolet rays, excimer lasers, but also means electron beams. And the drawing of particle lines such as ion beams.

再者,於本說明書中,「(甲基)丙烯酸酯」表示丙烯酸酯及甲基丙烯酸酯,「(甲基)丙烯基」表示丙烯基 及甲基丙烯基,「(甲基)丙烯醯基」表示丙烯醯基及甲基丙烯醯基。又,於本說明書中,「單聚物」與「單體」同義。本發明中的單體係與寡聚物及聚合物區別,指質量平均分子量為2,000以下之化合物。 In the present specification, "(meth) acrylate" means acrylate and methacrylate, and "(meth) propylene group" means propylene group. And a methacryl group, "(meth) acryloyl group" means an acryl fluorenyl group and a methacryl fluorenyl group. In addition, in the present specification, "monomer" is synonymous with "monomer". The single system in the present invention is distinguished from the oligomer and the polymer by a compound having a mass average molecular weight of 2,000 or less.

尚且,於以下說明的實施形態中,對於已經參照的圖面中所說明之構件等,藉由在圖中附相同符號或相當符號而將說明簡略化或省略化。 In the embodiments described below, the description of the components and the like, which are described in the drawings, will be simplified or omitted.

積層體:本發明之積層體之特徵為:在(A)支撐體上依順序具有(B)接著劑層前驅物、(C)保護層、(D)裝置晶圓,前述(B)接著劑層前驅物包含(b-1)聚合性單體及/或聚合性寡聚物,且聚合性單體及/或聚合性寡聚物之聚合率為10~70%。 Laminate: The laminate of the present invention is characterized by having (B) an adhesive layer precursor, (C) a protective layer, (D) device wafer, and the above (B) adhesive on the (A) support. The layer precursor contains (b-1) a polymerizable monomer and/or a polymerizable oligomer, and the polymerization ratio of the polymerizable monomer and/or the polymerizable oligomer is 10 to 70%.

又,本發明之積層體亦關於使前述積層體更硬化之積層體。即,在(A)支撐體上依順序具有(B2)接著劑層、(C)保護層、(D)裝置晶圓,前述(B2)接著劑層係(B)接著劑層前驅物之硬化物。 Further, the laminated body of the present invention is also a laminated body in which the laminated body is more hardened. That is, the (B2) adhesive layer, the (C) protective layer, and the (D) device wafer are sequentially provided on the (A) support, and the (B2) adhesive layer (B) adhesive layer precursor is hardened. Things.

本發明之積層體於250℃以上的環境下亦可使用之點係價值高。 The layered body of the present invention can be used in an environment of 250 ° C or higher and has a high point value.

依照本發明之積層體,於對被處理構件施予機械或化學處理之際,可藉由高接著力來暫時支撐被處理構件,同時不對處理過構件造成損傷,可容易地解除對於處理過構件之暫時支撐。 According to the laminated body of the present invention, when the mechanically or chemically treated member is subjected to mechanical or chemical treatment, the member to be processed can be temporarily supported by a high adhesion force without causing damage to the treated member, and the processed member can be easily released. Temporary support.

本發明之積層體較佳為矽貫通電極形成用。以後詳述矽貫通電極之形成。 The laminate of the present invention is preferably used for the formation of a tantalum through electrode. The formation of the through electrode will be described in detail later.

以下,詳細說明本發明之積層體可含有的各成分。 Hereinafter, each component which can be contained in the laminated body of this invention is demonstrated in detail.

<(B)接著劑層前驅物> <(B) Adhesive layer precursor>

本發明之積層體具有(B)接著劑層前驅物,接著劑層前驅物包含(b-1)聚合性單體及/或聚合性寡聚物,且聚合性單體及/或聚合性寡聚物之聚合率為10~70%。以下,說明形成接著劑層的接著劑層前驅物中所含有的成分。 The laminate of the present invention has (B) an adhesive layer precursor, and the adhesive layer precursor contains (b-1) a polymerizable monomer and/or a polymerizable oligomer, and a polymerizable monomer and/or a polymerizable oligomer The polymerization rate of the polymer is 10 to 70%. Hereinafter, the components contained in the precursor layer of the adhesive layer forming the adhesive layer will be described.

<<接著劑層前驅物>> <<Binder layer precursor>>

((b-1)聚合性單體及/或聚合性寡聚物) ((b-1) polymerizable monomer and/or polymerizable oligomer)

於接著劑層前驅物中,具有(b-1)聚合性單體及/或聚合性寡聚物。 The (b-1) polymerizable monomer and/or polymerizable oligomer is contained in the adhesive layer precursor.

作為聚合性單體,可使用任意者,可自以下說明的自由基聚合性單體及/或聚合性寡聚物之中,任意地選擇。 Any polymerizable monomer can be used, and it can be arbitrarily selected from the radically polymerizable monomer and/or the polymerizable oligomer described below.

從接著性與剝離性之觀點來看,較佳為包含至少1種之2官能以上的聚合性單體,更佳為包含至少1種之3官能以上的聚合性單體。再者,從接著劑前驅物的適當硬度與柔軟度並存之觀點來看,更佳為包含2官能以下的聚合性單體及3官能以上的聚合性單體之混合物。 From the viewpoint of adhesion and releasability, it is preferred to contain at least one of two or more functional monomers, and more preferably at least one of three or more functional monomers. Further, from the viewpoint of coexistence of appropriate hardness and softness of the adhesive precursor, a mixture of a polymerizable monomer having two or less functional groups and a polymerizable monomer having three or more functional groups is more preferable.

又,聚合性單體及/或聚合性寡聚物較佳為包含氟原子及/或矽原子,更佳為至少包含氟原子。於本發明中,在(b-1)聚合性單體及/或聚合性寡聚物之中,較佳為包含5質量%以上為氟原子之聚合性化合物,更佳為包含10質量%以上為氟原子之聚合性化合物,尤佳為包含20質量%以上為氟原子之聚合性化合物。 Further, the polymerizable monomer and/or the polymerizable oligomer preferably contains a fluorine atom and/or a ruthenium atom, and more preferably contains at least a fluorine atom. In the present invention, the (b-1) polymerizable monomer and/or the polymerizable oligomer are preferably a polymerizable compound containing 5% by mass or more of a fluorine atom, and more preferably 10% by mass or more. The polymerizable compound which is a fluorine atom is particularly preferably a polymerizable compound containing 20% by mass or more of a fluorine atom.

接著劑層前驅物中的聚合性單體及/或聚合性寡聚物之聚合率為10~70%,較佳為20~60%,更佳為25~50%。如此地,藉由接著劑之半硬化層來與設有保護層的裝置晶圓貼合,可適度地錨固(anchor)硬化與提高彈性模數。 The polymerization ratio of the polymerizable monomer and/or the polymerizable oligomer in the precursor of the layer is 10 to 70%, preferably 20 to 60%, more preferably 25 to 50%. In this way, by bonding the semi-hardened layer of the adhesive to the device wafer provided with the protective layer, the anchor hardening and the elastic modulus can be appropriately moderated.

作為將聚合性單體及/或聚合性寡聚物之聚合率調整至10~70%的方法,可舉出將包含聚合性單體及/或聚合性寡聚物的組成物(接著劑層前驅物形成用組成物)以50~300℃予以加熱之方法、照射活性光線或放射線之方法及聚合引發劑之選擇等。 The method of adjusting the polymerization rate of the polymerizable monomer and/or the polymerizable oligomer to 10 to 70% includes a composition containing a polymerizable monomer and/or a polymerizable oligomer (adhesive layer). The precursor formation composition) is heated at 50 to 300 ° C, the method of irradiating active light or radiation, and the selection of a polymerization initiator.

將接著劑層前驅物形成用組成物以50~300℃予以加熱之方法中的加熱溫度較佳為50~300℃,更佳為100~200℃,尤佳為140~170℃。加熱時間較佳為30秒~10分鐘,更佳為1~7分鐘,尤佳為2~5分鐘。 The heating temperature in the method of heating the composition for forming the adhesive layer precursor at 50 to 300 ° C is preferably 50 to 300 ° C, more preferably 100 to 200 ° C, and particularly preferably 140 to 170 ° C. The heating time is preferably from 30 seconds to 10 minutes, more preferably from 1 to 7 minutes, and particularly preferably from 2 to 5 minutes.

照射活性光線或放射線之方法,例如係藉由使用UV曝光裝置,將接著劑層前驅物形成用組成物予以曝光,而使聚合性單體及/或聚合性寡聚物聚合。曝光量較佳為100~5000mJ/cm2,更佳為300~3000mJ/cm2,尤佳為400~1500mJ/cm2The method of irradiating the active light or the radiation, for example, by exposing the composition for forming an adhesive layer precursor precursor by using a UV exposure apparatus, polymerizes the polymerizable monomer and/or the polymerizable oligomer. The exposure amount is preferably from 100 to 5,000 mJ/cm 2 , more preferably from 300 to 3,000 mJ/cm 2 , and particularly preferably from 400 to 1,500 mJ/cm 2 .

聚合性單體及/或聚合性寡聚物之聚合率,例如可進行聚合性單體及/或聚合性寡聚物之聚合前後的IR測定,自800~820cm-1附近的波峰面積之減少率來測定。 The polymerization rate of the polymerizable monomer and/or the polymerizable oligomer can be, for example, IR measurement before and after polymerization of the polymerizable monomer and/or polymerizable oligomer, and the reduction of the peak area from 800 to 820 cm -1 Rate to determine.

聚合性單體及/或聚合性寡聚物係意指具有聚合性基的化合物,但作為聚合性基,較佳為自由基聚 合性基。即,作為聚合性單體及/或聚合性寡聚物,較佳為自由基聚合性單體及/或聚合性寡聚物。本發明中的自由基聚合性單體及/或聚合性寡聚物之官能基數,係意指1分子中的自由基聚合性基之數。所謂的自由基聚合性基,典型地係藉由活性光線或放射線之照射、或自由基之作用,而可進行聚合之基。 The polymerizable monomer and/or polymerizable oligomer means a compound having a polymerizable group, but as a polymerizable group, a radical polymerization is preferred. Synthetic base. In other words, the polymerizable monomer and/or the polymerizable oligomer are preferably a radical polymerizable monomer and/or a polymerizable oligomer. The number of functional groups of the radical polymerizable monomer and/or the polymerizable oligomer in the present invention means the number of radical polymerizable groups in one molecule. The radical polymerizable group is typically a polymerizable group by irradiation with active light or radiation or by the action of a radical.

再者,聚合性單體係與高分子化合物不同之化合物。聚合性單體典型上為低分子化合物,較佳為分子量2000以下之低分子化合物,更佳為1500以下之低分子化合物,尤佳為分子量900以下之低分子化合物。再者,分子量通常為100以上。又,所謂的聚合性寡聚物,典型上就是比較低分子量的聚合物,較佳為鍵結有10個至100個單體之聚合物。作為分子量,藉由凝膠滲透層析(GPC)法測定之聚苯乙烯換算的重量平均分子量較佳為2000~20000,更佳為2000~15000,最佳為2000~10000。 Further, the polymerizable single system is a compound different from the polymer compound. The polymerizable monomer is typically a low molecular compound, preferably a low molecular weight compound having a molecular weight of 2,000 or less, more preferably a low molecular weight compound of 1,500 or less, and particularly preferably a low molecular weight compound having a molecular weight of 900 or less. Further, the molecular weight is usually 100 or more. Further, the polymerizable oligomer is typically a relatively low molecular weight polymer, preferably a polymer having 10 to 100 monomers bonded thereto. The polystyrene-equivalent weight average molecular weight measured by a gel permeation chromatography (GPC) method is preferably from 2,000 to 20,000, more preferably from 2,000 to 15,000, most preferably from 2,000 to 10,000.

聚合性基例如較佳為可加成聚合反應之官能基,作為可加成聚合反應之官能基,可舉出乙烯性不飽和鍵結基。作為乙烯性不飽和鍵結基,較佳為苯乙烯基、(甲基)丙烯醯基及烯丙基,更佳為(甲基)丙烯醯基。即,本發明所用之自由基聚合性單體較佳為(甲基)丙烯酸酯單體,更佳為丙烯酸酯單體。 The polymerizable group is preferably a functional group capable of undergoing addition polymerization, and examples of the functional group capable of addition polymerization include an ethylenically unsaturated bonding group. The ethylenically unsaturated bonding group is preferably a styryl group, a (meth)acryl fluorenyl group and an allyl group, and more preferably a (meth) acrylonitrile group. That is, the radical polymerizable monomer used in the present invention is preferably a (meth) acrylate monomer, more preferably an acrylate monomer.

作為自由基聚合性單體,例如可為單體、預聚物即二聚物、三聚物及寡聚物、或彼等之混合物以及彼等之多聚物等之化學形態中的任一者。 The radical polymerizable monomer may be, for example, any of a chemical form of a monomer, a prepolymer, that is, a dimer, a trimer, an oligomer, or a mixture thereof, and a polymer thereof. By.

更具體地,作為單體及其預聚物之例,可舉 出不飽和羧酸(例如丙烯酸、甲基丙烯酸、伊康酸、巴豆酸、異巴豆酸、馬來酸等)或其酯類、醯胺類、以及此等之多聚物,較佳為不飽和羧酸與多元醇化合物之酯、及不飽和羧酸與多元胺化合物之醯胺類、以及此等之多聚物。又,具有羥基或胺基、巰基等之親核性取代基的不飽和羧酸酯或醯胺類、與單官能或多官能異氰酸酯類或環氧類之加成反應物、或與單官能或多官能的羧酸之脫水縮合反應物等亦可適用。另外,具有異氰酸酯基或環氧基等之親電子性取代基的不飽和羧酸酯或醯胺類、與單官能或多官能的醇類、胺類、硫醇類之加成反應物,更且具有鹵基或甲苯磺醯氧基等之脫離性取代基的不飽和羧酸酯或醯胺類、與單官能或多官能的醇顆、胺類、硫醇類之取代反應物亦合適。還有,作為其它例,代替上述的不飽和羧酸,亦可使用取代成不飽和膦酸、苯乙烯等的乙烯基苯衍生物、乙烯基醚、烯丙基醚等之化合物群。 More specifically, as an example of a monomer and a prepolymer thereof, An unsaturated carboxylic acid (for example, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, etc.) or an ester thereof, a guanamine, and the like, preferably no An ester of a saturated carboxylic acid and a polyol compound, and an amide of an unsaturated carboxylic acid and a polyamine compound, and a polymer thereof. Further, an unsaturated carboxylic acid ester or decylamine having a nucleophilic substituent such as a hydroxyl group, an amine group or a fluorenyl group, an addition reaction with a monofunctional or polyfunctional isocyanate or an epoxy group, or a monofunctional or A dehydration condensation reaction product of a polyfunctional carboxylic acid or the like can also be applied. Further, an unsaturated carboxylic acid ester or guanamine having an electrophilic substituent such as an isocyanate group or an epoxy group, or an addition reaction product with a monofunctional or polyfunctional alcohol, an amine or a thiol, Further, a substituted carboxylic acid ester or a decylamine having a detachable substituent such as a halogen group or a tosyloxy group, and a substituted reactant of a monofunctional or polyfunctional alcohol granule, an amine or a thiol are also suitable. Further, as another example, in place of the above unsaturated carboxylic acid, a compound group such as a vinylbenzene derivative such as an unsaturated phosphonic acid or styrene, a vinyl ether or an allyl ether may be used.

作為多元醇化合物與不飽和羧酸之酯的單體之具體例,於丙烯酸酯中,有乙二醇二丙烯酸酯、三乙二醇二丙烯酸酯、1,3-丁二醇二丙烯酸酯、四亞甲基二醇二丙烯酸酯、丙二醇二丙烯酸酯、新戊二醇二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、三羥甲基丙烷三(丙烯醯氧基丙基)醚、三羥甲基乙烷三丙烯酸酯、己二醇二丙烯酸酯、1,4-環己二醇二丙烯酸酯、四乙二醇二丙烯酸酯、季戊四醇二丙烯酸酯、季戊四醇三丙烯酸酯、二季戊四醇二丙烯酸酯、二季戊四醇六丙烯酸酯、季戊四醇四 丙烯酸酯、山梨糖醇三丙烯酸酯、山梨糖醇四丙烯酸酯、山梨糖醇五丙烯酸酯、山梨糖醇六丙烯酸酯、三(丙烯醯氧基乙基)異三聚氰酸酯、異三聚氰酸環氧乙烷(EO)改性三丙烯酸酯、聚酯丙烯酸酯寡聚物等。 Specific examples of the monomer of the polyol compound and the ester of the unsaturated carboxylic acid include ethylene glycol diacrylate, triethylene glycol diacrylate, and 1,3-butylene glycol diacrylate in the acrylate. Tetramethylene glycol diacrylate, propylene glycol diacrylate, neopentyl glycol diacrylate, trimethylolpropane triacrylate, trimethylolpropane tris(propylene methoxypropyl) ether, trihydroxyl Methyl ethane triacrylate, hexanediol diacrylate, 1,4-cyclohexanediol diacrylate, tetraethylene glycol diacrylate, pentaerythritol diacrylate, pentaerythritol triacrylate, dipentaerythritol diacrylate Dipentaerythritol hexaacrylate, pentaerythritol IV Acrylate, sorbitol triacrylate, sorbitol tetraacrylate, sorbitol pentaacrylate, sorbitol hexaacrylate, tris(propylene oxyethyl) isomeric cyanurate, heterotrimerization Cyanic acid ethylene oxide (EO) modified triacrylate, polyester acrylate oligomer, and the like.

作為甲基丙烯酸酯,有四亞甲基二醇二甲基丙烯酸酯、三乙二醇二甲基丙烯酸酯、新戊二醇二甲基丙烯酸酯、三羥甲基丙烷三甲基丙烯酸酯、三羥甲基乙烷三甲基丙烯酸酯、乙二醇二甲基丙烯酸酯、1,3-丁二醇二甲基丙烯酸酯、己二醇二甲基丙烯酸酯、季戊四醇二甲基丙烯酸酯、季戊四醇三甲基丙烯酸酯、季戊四醇四甲基丙烯酸酯、二季戊四醇二甲基丙烯酸酯、二季戊四醇六甲基丙烯酸酯、山梨糖醇三甲基丙烯酸酯、山梨糖醇四甲基丙烯酸酯、雙[p-(3-甲基丙烯醯氧基-2-羥基丙氧基)苯基]二甲基甲烷、雙-[p-(甲基丙烯醯氧基乙氧基)苯基]二甲基甲烷等。 Examples of the methacrylate include tetramethylene glycol dimethacrylate, triethylene glycol dimethacrylate, neopentyl glycol dimethacrylate, and trimethylolpropane trimethacrylate. Trimethylolethane trimethacrylate, ethylene glycol dimethacrylate, 1,3-butylene glycol dimethacrylate, hexanediol dimethacrylate, pentaerythritol dimethacrylate, Pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol dimethacrylate, dipentaerythritol hexamethacrylate, sorbitol trimethacrylate, sorbitol tetramethacrylate, double [ P-(3-methacryloxy-2-hydroxypropoxy)phenyl]dimethylmethane, bis-[p-(methacryloxyethoxy)phenyl]dimethylmethane Wait.

作為伊康酸酯,有乙二醇二伊康酸酯、丙二醇二伊康酸酯、1,3-丁二醇二伊康酸酯、1,4-丁二醇二伊康酸酯、四亞甲基二醇二伊康酸酯、季戊四醇二伊康酸酯、山梨糖醇四伊康酸酯等。 As the econic acid ester, there are ethylene glycol dicone ester, propylene glycol diconconate, 1,3-butanediol diconcanate, 1,4-butanediol diconcanate, and four. Methylene glycol diconconate, pentaerythritol diconconate, sorbitol tetraconcanate, and the like.

作為巴豆酸酯,有乙二醇二巴豆酸酯、四亞甲基二醇二巴豆酸酯、季戊四醇二巴豆酸酯、山梨糖醇肆二巴豆酸酯等。 Examples of the crotonate include ethylene glycol dicrotonate, tetramethylene glycol dicrotonate, pentaerythritol dicrotonate, and sorbitan dicrotonate.

作為異巴豆酸酯,有乙二醇二異巴豆酸酯、季戊四醇二異巴豆酸酯、山梨糖醇四異巴豆酸酯等。 Examples of the isocrotonate include ethylene glycol diisocrotonate, pentaerythritol diisocrotonate, and sorbitol tetraisocrotonate.

作為馬來酸酯,有乙二醇二馬來酸酯、三乙 二醇二馬來酸酯、季戊四醇二馬來酸酯、山梨糖醇四馬來酸酯等。 As a maleate, there are ethylene glycol dimaleate, triethyl Diol dimaleate, pentaerythritol dimaleate, sorbitol tetramaleate, and the like.

作為其它酯之例,例如日本特公昭46-27926號公報、日本特公昭51-47334號公報、日本特開昭57-196231號公報記載的脂肪族醇系酯類、或日本特開昭59-5240號公報、日本特開昭59-5241號公報、日本特開平2-226149號公報記載之具有芳香族系骨架者、日本特開平1-165613號公報記載之含有胺基者等亦適用。 For example, the aliphatic alcohol-based esters described in Japanese Patent Publication No. Sho 57-196231, and the Japanese Patent Publication No. Sho 57-196231, or JP-A-59-196231, Also applicable to those having an aromatic skeleton described in Japanese Laid-Open Patent Publication No. Hei No. Hei. No. Hei. No. Hei.

又,作為多元胺化合物與不飽和羧酸之醯胺的單體之具體例,有亞甲基雙丙烯醯胺、亞甲基雙甲基丙烯醯胺、1,6-六亞甲基雙丙烯醯胺、1,6-六亞甲基雙甲基丙烯醯胺、二伸乙三胺參丙烯醯胺、苯二甲基雙丙烯醯胺、苯二甲基雙甲基丙烯醯胺等。 Further, specific examples of the monomer of the polyamine compound and the decylamine of the unsaturated carboxylic acid include methylene bis acrylamide, methylene bis methacrylamide, and 1,6-hexamethylene bis propylene. Indoleamine, 1,6-hexamethylene bismethyl acrylamide, diethylene glycol amine propylene amide, phthaldimethyl bis decyl amide, benzyl dimethyl methacrylamide, and the like.

作為其它較佳的醯胺系單體之例,可舉出日本特公昭54-21726號公報記載之環己烯構造者。 Examples of other preferred amide-based monomers include those of the cyclohexene structure described in JP-A-54-21726.

又,使用異氰酸酯與羥基之加成反應所製造的胺基甲酸酯系加成聚合性單體係亦合適,作為如此的具體例,例如可舉出對日本特公昭48-41708號公報記載之在1分子具有2個以上的異氰酸酯基之聚異氰酸酯化合物,附加下述通式(A)所示之含有羥基的乙烯基單體而得之在1分子中含有2個以上的聚合性乙烯基之乙烯基胺基甲酸酯化合物等。 In addition, a urethane-based addition polymerizable single system produced by an addition reaction of an isocyanate and a hydroxyl group is also suitable, and as such a specific example, for example, it is described in Japanese Patent Publication No. Sho 48-41708. In the polyisocyanate compound having two or more isocyanate groups per molecule, a hydroxyl group-containing vinyl monomer represented by the following formula (A) is added, and two or more polymerizable vinyl groups are contained in one molecule. A vinyl urethane compound or the like.

CH2=C(R4)COOCH2CH(R5)OH (A) CH 2 =C(R 4 )COOCH 2 CH(R 5 )OH (A)

(惟,R4及R5表示H或CH3)。 (R, R 4 and R 5 represent H or CH 3 ).

另外,如日本特開昭51-37193號公報、日本特公平 2-32293號公報、日本特公平2-16765號公報記載之胺基甲酸酯丙烯酸酯類、或日本特公昭58-49860號公報、日本特公昭56-17654號公報、日本特公昭62-39417號公報、日本特公昭62-39418號公報記載之具有環氧乙烷系骨架的胺基甲酸酯化合物類亦合適。 In addition, as disclosed in Japanese Patent Laid-Open No. 51-37193, Japan’s special fair The urethane acrylates described in Japanese Patent Publication No. 2-16765, Japanese Patent Publication No. Hei. No. 2-16765, Japanese Patent Publication No. SHO 58-49860, Japanese Patent Publication No. SHO 56-17654, and Japanese Patent Publication No. 62-39417 A urethane compound having an ethylene oxide skeleton described in Japanese Patent Publication No. 62-39418 is also suitable.

還有,作為自由基聚合性單體,在本發明中亦可採用日本特開2009-288705號公報之段落編號0095~段落編號0108中記載之化合物。 Further, as the radical polymerizable monomer, the compound described in Paragraph No. 0095 to Paragraph No. 0108 of JP-A-2009-288705 can also be used in the present invention.

又,作為前述自由基聚合性單體,亦較佳為具有至少1個可加成聚合的乙烯基,於常壓下具有100℃以上的沸點之具有乙烯性不飽和基之化合物。作為其例,可舉出聚乙二醇單(甲基)丙烯酸酯、聚丙二醇單(甲基)丙烯酸酯、(甲基)丙烯酸苯氧基乙酯等之單官能的丙烯酸酯或甲基丙烯酸酯;聚乙二醇二(甲基)丙烯酸酯、三羥甲基乙烷三(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、己二醇(甲基)丙烯酸酯、三羥甲基丙烷三(丙烯醯氧基丙基)醚、三(丙烯醯氧基乙基)異三聚氰酸酯、於甘油或三羥甲基乙烷等的多官能醇附加環氧乙烷或環氧丙烷後進行(甲基)丙烯酸酯化者、如日本特公昭48-41708號、日本特公昭50-6034號、日本特開昭51-37193號各公報記載之胺基甲酸酯(甲基)丙烯酸酯類、日本特開昭48-64183號、日本特公昭49-43191號、日本特公昭52-30490號各公報記載之聚酯丙烯酸酯類、環氧樹脂與( 甲基)丙烯酸之反應生成物的環氧丙烯酸酯類等之多官能的丙烯酸酯或甲基丙烯酸酯及此等之混合物。 Moreover, as the radical polymerizable monomer, a compound having an ethylenically unsaturated group having at least one addition-polymerizable vinyl group and having a boiling point of 100 ° C or higher at normal pressure is also preferable. Examples thereof include monofunctional acrylates or methacrylic acids such as polyethylene glycol mono(meth)acrylate, polypropylene glycol mono(meth)acrylate, and phenoxyethyl (meth)acrylate. Ester; polyethylene glycol di(meth)acrylate, trimethylolethane tri(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol Tetra (meth) acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, hexane diol (meth) acrylate, trimethylolpropane tri (propylene oxy propylene propylene) (meth)acrylic acid, tris(propylene methoxyethyl) isomeric cyanurate, polyfunctional alcohol such as glycerin or trimethylolethane, followed by ethylene oxide or propylene oxide The urethane (meth) acrylates described in each of the publications of Japanese Patent Publication No. Sho 48-41708, Japanese Patent Publication No. Sho 50-6034, and JP-A-53-37193, and Japanese Patent Laid-Open Polyester acrylates, epoxy resins and (described in Japanese Patent Publication No. Sho 49-43191, Japanese Patent Publication No. Sho 52-30490) A polyfunctional acrylate or methacrylate such as an epoxy acrylate such as a reaction product of methyl)acrylic acid and a mixture thereof.

亦可舉出使多官能羧酸與(甲基)丙烯酸環氧丙酯等之具有環狀醚基與乙烯性不飽和基之化合物反應而得之多官能(甲基)丙烯酸酯等。 Further, a polyfunctional (meth)acrylate obtained by reacting a polyfunctional carboxylic acid with a compound having a cyclic ether group and an ethylenically unsaturated group such as glycidyl (meth)acrylate may be mentioned.

另外,作為其它較佳的自由基聚合性單體,亦可使用日本特開2010-160418號公報、日本特開2010-129825號公報、日本專利第4364216號等記載之具有茀環,具有2官能以上的乙烯性聚合性基之化合物、咔哚(cardo)樹脂。 In addition, as the other preferable radically polymerizable monomer, an anthracene ring having a bifunctional group as described in JP-A-2010-160418, JP-A-2010-129825, and Japanese Patent No. 4,364,216, etc. The above compound of an ethylenic polymerizable group or a cardo resin.

再者,作為自由基聚合性單體之其它例,亦可舉出日本特公昭46-43946號公報、日本特公平1-40337號公報、日本特公平1-40336號公報記載之特定不飽和化合物、或日本特開平2-25493號公報記載之乙烯基膦酸系化合物等。又,於某些情況中,宜使用日本特開昭61-22048號公報記載之含有全氟烷基的構造。再者,亦可使用日本接著協會誌vol.20,No.7,300~308頁(1984年)中介紹作為光硬化性單體及寡聚物者。 Further, as another example of the radically polymerizable monomer, a specific unsaturated compound described in JP-A-46-43946, JP-A No. 1-40337, and JP-A No. 1-40336 can be cited. Or a vinylphosphonic acid-based compound described in JP-A No. 2-25493. Further, in some cases, a structure containing a perfluoroalkyl group described in JP-A-61-22048 is preferably used. Further, it can also be referred to as a photocurable monomer and oligomer in Japanese Association of Associations vol. 20, No. 7, 300-308 (1984).

還有,作為於常壓下具有100℃以上的沸點,且具有至少一個可加成聚合的乙烯性不飽和基之化合物,亦合適為日本特開2008-292970號公報之段落編號0254~0257中記載之化合物。 Further, as a compound having a boiling point of 100 ° C or more at normal pressure and having at least one addition-polymerizable ethylenically unsaturated group, it is also suitable in paragraphs 0254 to 0257 of JP-A-2008-292970. The compound described.

除了上述,還可採用下述通式(MO-1)~(MO-5)所示之自由基聚合性單體。再者,式中T為氧化烯基時,R係鍵結於碳原子側之末端。 In addition to the above, a radical polymerizable monomer represented by the following formula (MO-1) to (MO-5) can also be used. Further, when T is an oxyalkylene group, R is bonded to the terminal of the carbon atom side.

前述通式中,n為0~14之整數,m為1~8之整數。複數存在於一分子內的R、T係各自可相同或相異。 In the above formula, n is an integer from 0 to 14, and m is an integer from 1 to 8. The R and T lines present in a single molecule may be the same or different.

於上述通式(MO-1)~(MO-5)所示的自由基聚合性單體之各自中,複數的R之內的至少1個表示-OC(=O)CH=CH2或-OC(=O)C(CH3)=CH2所示之基。 In each of the radical polymerizable monomers represented by the above formulas (MO-1) to (MO-5), at least one of the plural R represents -OC(=O)CH=CH 2 or - OC(=O)C(CH 3 )=the group represented by CH 2 .

作為上述通式(MO-1)~(MO-5)所示之自由基聚合性單體之具體例,於本發明中亦可採用日本特開2007-269779號公報之段落編號0248~0251中記載的化合物。 Specific examples of the radical polymerizable monomer represented by the above formula (MO-1) to (MO-5) may be used in the present invention in paragraphs 0248 to 0251 of JP-A-2007-269779. The compound described.

又,亦可使用日本特開平10-62986號公報中作為通式(1)及(2)的具體例所一起記載的於前述多官能醇附加環氧乙烷或環氧丙烷後進行(甲基)丙烯酸酯化之化合物作為自由基聚合性單體。 Further, it is also possible to carry out the addition of ethylene oxide or propylene oxide to the polyfunctional alcohol described above as a specific example of the general formulae (1) and (2) in JP-A-10-62986 (methyl group). An acrylated compound is used as a radical polymerizable monomer.

其中,作為自由基聚合性單體,較佳為二季戊四醇三丙烯酸酯(市售品為KAYARAD D-330;日本化藥股份有限公司製)、二季戊四醇四丙烯酸酯(市售品為KAYARAD D-320;日本化藥股份有限公司製)、二季戊四醇五(甲基)丙烯酸酯(市售品為KAYARAD D-310;日本化藥股份有限公司製)、二季戊四醇六(甲基)丙烯酸酯(市售品為KAYARAD DPHA;日本化藥股份有限公司製)、及此等之(甲基)丙烯醯基隔著乙二醇、丙二醇殘基之構造。亦可使用此等之寡聚物型。 Among them, as the radical polymerizable monomer, dipentaerythritol triacrylate (commercially available as KAYARAD D-330; manufactured by Nippon Kayaku Co., Ltd.) and dipentaerythritol tetraacrylate (commercially available as KAYARAD D-) are preferred. 320; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol penta (meth) acrylate (commercially available as KAYARAD D-310; manufactured by Nippon Kayaku Co., Ltd.), dipentaerythritol hexa(meth) acrylate (city) The product sold is KAYARAD DPHA; manufactured by Nippon Kayaku Co., Ltd., and the structure in which the (meth) acrylonitrile group is separated by ethylene glycol or propylene glycol residues. These oligomer types can also be used.

自由基聚合性單體係多官能單體,亦可具有羧基、磺酸基、磷酸基等之酸基。因此,乙烯性化合物係在如上述為混合物時,只要是具有未反應的羧基,則可直接利用其,但必要時,亦可使上述的乙烯性化合物之羥基與非芳香族羧酸酐反應而導入酸基。此時,作為所使用的非芳香族羧酸酐之具體例,可舉出四氫苯二甲酸酐、烷基化四氫苯二甲酸酐、六氫苯二甲酸酐、烷基化六氫苯二甲酸酐、琥珀酸酐、馬來酸酐。 The radically polymerizable single-system polyfunctional monomer may have an acid group such as a carboxyl group, a sulfonic acid group or a phosphoric acid group. Therefore, when the ethylene compound is a mixture as described above, it may be used as long as it has an unreacted carboxyl group, but may be introduced by reacting a hydroxyl group of the above-mentioned ethylenic compound with a non-aromatic carboxylic anhydride, if necessary. Acid base. In this case, specific examples of the non-aromatic carboxylic acid anhydride to be used include tetrahydrophthalic anhydride, alkylated tetrahydrophthalic anhydride, hexahydrophthalic anhydride, and alkylated hexahydrobenzene. Formic anhydride, succinic anhydride, maleic anhydride.

作為本發明中的接著劑層前驅物,亦可為具有酸基的單體。 The precursor of the adhesive layer in the present invention may be a monomer having an acid group.

於本發明中,作為具有酸基的單體,是脂肪族多羥基化合物與不飽和羧酸之酯,較佳為使脂肪族多羥基化合物之未反應的羥基與非芳香族羧酸酐反應而具有酸基之多官能單體,特佳為於此酯中,脂肪族多羥基化合物為季戊四醇及/或二季戊四醇。作為市售品,例如於東亞合成股份有限公司製之多元酸改性丙烯酸寡聚物中,可舉出M-510、M-520等。 In the present invention, the monomer having an acid group is an ester of an aliphatic polyhydroxy compound and an unsaturated carboxylic acid, and preferably has an unreacted hydroxyl group of the aliphatic polyhydroxy compound reacted with a non-aromatic carboxylic anhydride. An acid group-based polyfunctional monomer, particularly preferably in this ester, the aliphatic polyhydroxy compound is pentaerythritol and/or dipentaerythritol. As a commercial item, for example, M-510, M-520, etc. are mentioned among the poly acid-modified acrylic oligomer manufactured by the East Asia Synthetic Co., Ltd.

於本發明中,按照需要,亦可併用不具有酸基的多官能單體與具有酸基的多官能單體作為單體。 In the present invention, a polyfunctional monomer having no acid group and a polyfunctional monomer having an acid group may be used in combination as a monomer, as needed.

具有酸基的多官能單體之較佳的酸價為0.1~40mg-KOH/g,特佳為5~30mg-KOH/g。多官能單體的酸價若過低,則顯像溶解特性低落,若過高則製造或操作變困難,光聚合性能低落,畫素的表面平滑性等之硬化性有變差之傾向。因此,當併用2種以上之不同酸基的多官能單體時,或併用不具酸基的多官能單體時,必須將全體的多官能單體之酸基調整至上述範圍內。 The preferred acid value of the polyfunctional monomer having an acid group is 0.1 to 40 mg-KOH/g, particularly preferably 5 to 30 mg-KOH/g. When the acid value of the polyfunctional monomer is too low, the development solubility is lowered, and if it is too high, the production or handling becomes difficult, the photopolymerization performance is lowered, and the hardenability such as surface smoothness of the pixel tends to be deteriorated. Therefore, when a polyfunctional monomer of two or more different acid groups is used in combination, or when a polyfunctional monomer having no acid group is used in combination, it is necessary to adjust the acid groups of all the polyfunctional monomers to the above range.

又,作為自由基聚合性單體,較佳為含有具己內酯構造的多官能性單聚物。 Further, as the radical polymerizable monomer, a polyfunctional monomer having a caprolactone structure is preferable.

作為具己內酯構造的多官能性單聚物,只要是在其分子內具有己內酯構造,則沒有特別的限定,例如可藉由將三羥甲基乙烷、貳三羥甲基乙烷、三羥甲基丙烷、貳三羥甲基丙烷、季戊四醇、二季戊四醇、三季戊四醇、甘油、二甘油、三羥甲基三聚氰胺等之多元醇、與( 甲基)丙烯酸及ε-己內酯予以酯化而得之ε-己內酯改性多官能(甲基)丙烯酸酯。其中,較佳為下述通式(B)表示之具己內酯構造的多官能性單聚物。 The polyfunctional monomer having a caprolactone structure is not particularly limited as long as it has a caprolactone structure in its molecule, and for example, trimethylolethane or tris(hydroxymethyl) Polyols such as alkane, trimethylolpropane, trimethylolpropane, pentaerythritol, dipentaerythritol, tripentaerythritol, glycerin, diglycerin, trimethylol melamine, etc. The ε-caprolactone-modified polyfunctional (meth) acrylate obtained by esterification of methyl acrylate and ε-caprolactone. Among them, a polyfunctional monomer having a caprolactone structure represented by the following formula (B) is preferred.

(式中,6個R皆為下述通式(C)所示的基,或6個R中的1~5個為下述通式(C)所示的基,剩餘為下述通式(D)所示的基)。 (In the formula, all of the six R groups are groups represented by the following formula (C), or one to five of the six R groups are groups represented by the following formula (C), and the remainder is the following formula (D) shows the base).

(式中,R1表示氫原子或甲基,m表示1或2之數,「*」表示結合鍵)。 (wherein R 1 represents a hydrogen atom or a methyl group, m represents a number of 1 or 2, and "*" represents a bond).

(式中,R1表示氫原子或甲基,「*」表示結合鍵)。 (wherein R 1 represents a hydrogen atom or a methyl group, and "*" represents a bond).

如此之具己內酯構造的多官能性單體,例如由日本化藥(股)以KAYARAD DPCA系列所市售,可舉出DPCA-20(上述通式(B)~(D)中,m=1,通式(C)所示的基 之數=2,R1係皆氫原子之化合物)、DPCA-30(同式,m=1,通式(C)所示的基之數=3,R1係皆氫原子之化合物)、DPCA-60(同式,m=1,通式(C)所示的基之數=6,R1係皆氫原子之化合物)、DPCA-120(同式中,m=2,通式(C)所示的基之數=6,R1皆氫原子之化合物)等。 Such a polyfunctional monomer having a caprolactone structure is commercially available, for example, from the KAYARAD DPCA series, and is a DPCA-20 (in the above formula (B) to (D), m. =1, the number of the base represented by the general formula (C) = 2, the compound of which R 1 is a hydrogen atom), DPCA-30 (the same formula, m = 1, the number of the base represented by the general formula (C) = 3, compounds in which R 1 is a hydrogen atom), DPCA-60 (the same formula, m = 1, the number of groups represented by the formula (C) = 6, and the compound in which R 1 is a hydrogen atom), DPCA-120 (in the same formula, m = 2, the number of groups represented by the formula (C) = 6, a compound in which R 1 is a hydrogen atom) and the like.

於本發明中,具己內酯構造的多官能性單體係可為單獨或混合2種以上使用。 In the present invention, the polyfunctional single system having a caprolactone structure may be used alone or in combination of two or more.

又,作為多官能單體,亦較佳為由下述通式(i)或(ii)所示的化合物之群組中選出的至少1種。 Further, as the polyfunctional monomer, at least one selected from the group consisting of compounds represented by the following formula (i) or (ii) is also preferable.

前述通式(i)及(ii)中,E各自獨立地表示-((CH2)yCH2O)-或-((CH2)yCH(CH3)O)-,y各自獨立地表示0~10之整數,X各自獨立地表示丙烯醯基、甲基丙烯醯基、氫原子或羧基。 In the above formulae (i) and (ii), E each independently represents -((CH 2 ) y CH 2 O)- or -((CH 2 ) y CH(CH 3 )O)-, y each independently An integer of 0 to 10 is represented, and X each independently represents an acryloyl group, a methacryloyl group, a hydrogen atom or a carboxyl group.

前述通式(i)中,(甲基)丙烯醯基之合計為3個或4個,m各自獨立地表示0~10之整數,各m之合計為0~40之整數。惟,當各m之合計為0時,X中的任一個為羧基。 In the above formula (i), the total of (meth)acrylonyl groups is three or four, and m each independently represents an integer of from 0 to 10, and the total of each of m is an integer of from 0 to 40. However, when the total of each m is 0, any one of X is a carboxyl group.

前述通式(ii)中,(甲基)丙烯醯基之合計為5個或6個,n各自獨立地表示0~10之整數,各n之合計為0~60之整數。惟,當各n之合計為0時,X中的任一個為羧基。 In the above formula (ii), the total of (meth)acrylonyl groups is 5 or 6, and n each independently represents an integer of 0 to 10, and the total of n is an integer of 0 to 60. However, when the total of each n is 0, any one of X is a carboxyl group.

前述通式(i)中,m較佳為0~6之整數,更佳為0~4之整數。 In the above formula (i), m is preferably an integer of 0 to 6, more preferably an integer of 0 to 4.

又,各m之合計較佳為2~40之整數,更佳為2~16之整數,特佳為4~8之整數。 Further, the total of each of m is preferably an integer of 2 to 40, more preferably an integer of 2 to 16, and particularly preferably an integer of 4 to 8.

前述通式(ii)中,n較佳為0~6之整數,更佳為0~4之整數。 In the above formula (ii), n is preferably an integer of 0 to 6, more preferably an integer of 0 to 4.

另外,各n之合計較佳為3~60之整數,更佳為3~24之整數,特佳為6~12之整數。 Further, the total of n is preferably an integer of 3 to 60, more preferably an integer of 3 to 24, and particularly preferably an integer of 6 to 12.

還有,通式(i)或通式(ii)中的-((CH2)yCH2O)-或-((CH2)yCH(CH3)O)-較佳係氧原子側的末端鍵結於X之形態。 Further, -((CH 2 ) y CH 2 O)- or -((CH 2 ) y CH(CH 3 )O)- in the formula (i) or the formula (ii) is preferably an oxygen atom side The end of the bond is in the form of X.

特別地,於通式(ii)中,6個X皆為丙烯醯基之形態係較佳。 In particular, in the general formula (ii), it is preferred that the six X forms are all acrylonitrile groups.

前述通式(i)或(ii)所示的化合物係可由習知的步驟來合成,可藉由使環氧乙烷或環氧丙烷對季戊四醇或二季戊四醇進行開環加成反應而結合開環骨架之步驟,與例如使(甲基)丙烯醯氯與開環骨架的末端羥基反應而導入(甲基)丙烯醯基之步驟而合成。各步驟係熟知的步驟,本業者可容易地合成通式(i)或(ii)所示的化合物。 The compound represented by the above formula (i) or (ii) can be synthesized by a known procedure, and can be combined with ring opening by subjecting ethylene oxide or propylene oxide to a cycloaddition reaction of pentaerythritol or dipentaerythritol. The step of the skeleton is synthesized by, for example, a step of reacting (meth)acrylofluorene chloride with a terminal hydroxyl group of the ring-opening skeleton to introduce a (meth)acrylonitrile group. Each step is a well-known step, and the compound of the formula (i) or (ii) can be easily synthesized by a person skilled in the art.

於前述通式(i)或(ii)所示的化合物之中,更佳為季戊四醇衍生物及/或二季戊四醇衍生物。 Among the compounds represented by the above formula (i) or (ii), a pentaerythritol derivative and/or a dipentaerythritol derivative are more preferred.

具體地,可舉出下述式(a)~(f)所示的化合物(以下亦稱為「例示化合物(a)~(f)」),其中較佳為例示化合物(a)、(b)、(e)、(f)。 Specific examples thereof include compounds represented by the following formulas (a) to (f) (hereinafter also referred to as "exemplary compounds (a) to (f)"), and among them, preferred compounds (a) and (b) are exemplified. ), (e), (f).

作為通式(i)或(ii)所示的自由基聚合性單體之市售品,例如可舉出SARTOMER公司製之具有4個伸乙氧基鏈的4官能丙烯酸酯之SR-494、日本化藥股份有限公司製之具有6個伸戊氧基鏈的6官能丙烯酸酯之DPCA-60、具有3個伸異丁氧基鏈的3官能丙烯酸酯之TPA-330等。 The commercially available product of the radical polymerizable monomer represented by the formula (i) or (ii) is, for example, SR-494 having a tetrafunctional acrylate having four ethylene oxide chains, which is manufactured by SARTOMER Co., Ltd. A DPCA-60 having 6 pentyloxylate-functional 6-functional acrylates, a TPA-330 having 3 difunctional butyloxy chains, and the like.

又,作為自由基聚合性單體,亦合適為如日本特公昭48-41708號、日本特開昭51-37193號公報、日本特公平2-32293號公報、日本特公平2-16765號公報中記載之胺基甲酸酯丙烯酸酯類,或如日本特公昭58-49860號公報、日本特公昭56-17654號公報、日本特公昭62-39417號公報、日本特公昭62-39418號公報中記載之具有環氧乙烷系骨架之胺基甲酸酯化合物類。再者,作為聚合性單體,亦可使用日本特開昭63-277653號公報、日本特開昭63-260909號公報、日本特開平1-105238號公報中記載之在分子內具有胺基構造或硫絡構造之加成聚合性化合物類。 Further, the radical polymerizable monomer is also suitably used in, for example, Japanese Patent Publication No. Sho 48-41708, Japanese Patent Laid-Open No. Sho 51-37193, Japanese Patent Publication No. 2-32293, and Japanese Patent Publication No. 2-16765. The urethane acrylates described in the Japanese Patent Publication No. Sho 58-49860, Japanese Patent Publication No. SHO 56-17654, Japanese Patent Publication No. Sho 62-39417, and Japanese Patent Publication No. SHO 62-39418 A urethane compound having an ethylene oxide skeleton. In addition, as the polymerizable monomer, an amine group structure in the molecule can be used as described in JP-A-63-277653, JP-A-63-260909, and JP-A-10-15238. Or an addition polymerizable compound of a thiololine structure.

作為自由基聚合性單體之市售品,可舉出胺基甲酸酯寡聚物UAS-10、UAB-140(山陽國策PULP公司製)、UA-7200(新中村化學公司製、DPHA-40H(日本化藥公司製)、UA-306H、UA-306T、UA-306I、AH-600、T-600、AI-600(共榮公司製)、Blemmer PME400(日油(股)製))等。 The commercially available product of the radical polymerizable monomer is urethane oligomer UAS-10, UAB-140 (manufactured by Shanyang Guoce PULP Co., Ltd.), UA-7200 (manufactured by Shin-Nakamura Chemical Co., Ltd., DPHA- 40H (manufactured by Nippon Kayaku Co., Ltd.), UA-306H, UA-306T, UA-306I, AH-600, T-600, AI-600 (manufactured by Kyoei Co., Ltd.), Blemmer PME400 (made by Nippon Oil Co., Ltd.) Wait.

本發明中的聚合性單體,係對於2官能以下的自由基聚合性單體及3官能以上的自由基聚合性單體,可各自單獨1種使用,較佳為併用2種以上,從具有三維交聯構造之點來看,較佳為包含至少1種之3官能以上的自 由基聚合性單體,及2官能以下的自由基聚合性單體與3官能以上的自由基聚合性單體之混合物。 The polymerizable monomer in the present invention may be used alone or in combination of two or more kinds of radically polymerizable monomers and three or more functionally polymerizable monomers, and it is preferred to use two or more kinds in combination. In view of the three-dimensional crosslinked structure, it is preferred to include at least one of three or more functional groups. A mixture of a radical polymerizable monomer and a trifunctional or less radical polymerizable monomer and a trifunctional or higher radical polymerizable monomer.

作為自由基聚合性單體,從250℃的高溫製程後之易剝離性之觀點來看,較佳為具有至少一個之1,3-金剛烷基二甲醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、異三聚氰酸環氧乙烷改性二(甲基)丙烯酸酯、異三聚氰酸環氧乙烷改性三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二羥甲基丙烷四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯。 As the radical polymerizable monomer, it is preferred to have at least one of 1,3-adamantyl dimethanol di(meth)acrylate and trishydroxyl from the viewpoint of easy peelability after a high temperature process at 250 °C. Methylpropane tri(meth)acrylate, isomeric cyanuric acid modified di(meth)acrylate, isomeric cyanuric acid modified tri(meth)acrylate, pentaerythritol Tris(meth)acrylate, pentaerythritol tetra(meth)acrylate, dimethylolpropane tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, Tetramethylolmethane tetra(meth)acrylate.

又,從接著性與易剝離性之觀點來看,2官能以下的自由基聚合性單體及3官能以上的自由基聚合性單體之至少1種較佳為1個分子內所含有的任意2個自由基聚合性基之間的原子數皆9原子以上。即,於1個分子中具有3個以上的聚合性基時,意指任2個聚合性基間之原子數皆相隔9原子以上。 In addition, it is preferable that at least one of the radically polymerizable monomer having at least two functional groups and the radically polymerizable monomer having at least one functional group is contained in one molecule, from the viewpoint of the adhesiveness and the detachability. The number of atoms between the two radical polymerizable groups is 9 atoms or more. In other words, when three or more polymerizable groups are contained in one molecule, it means that the number of atoms between any two polymerizable groups is 9 atoms or more apart.

作為將1個分子內所含有的任意2個自由基聚合性基之間予以連結之由9原子以上所構成之連結基,可例示由-CO-、-O-、-NH-、2~4價的脂肪族基、2~6價的芳香族基及彼等之組合所組成之群組中選出的2價以上之連結基(通常,成為對應於官能基之數的價數),較佳為由-CO-、-O-、及2價的脂肪族基及彼等之組合所組成之群組中選出的2價連結基。此處,脂肪族基及芳香族基亦可具有取代基。 Examples of the linking group composed of 9 or more atoms connecting any two radical polymerizable groups contained in one molecule include -CO-, -O-, -NH-, and 2 to 4 Preferably, the divalent or higher linking group (generally, the valence corresponding to the number of the functional groups) selected from the group consisting of a valence aliphatic group, a 2 to 6 valent aromatic group, and a combination thereof is preferable. It is a divalent linking group selected from the group consisting of -CO-, -O-, and a divalent aliphatic group and a combination thereof. Here, the aliphatic group and the aromatic group may have a substituent.

2官能以下的自由基聚合性單體及/或3官能以上的自由基聚合性單體之1個分子內所含有的任意2個自由基聚合性基之間的原子數,由於若連結基的原子數過多,則剝離性降低,故作為2價的連結基,較佳為9~100原子,更佳為10~80原子,特佳為12~50原子。1個分子內所含有的任意2個自由基聚合性基之間的原子數,係自由基可聚合的乙烯性不飽和基間之原子數,具體地如以下之例計算。 The number of atoms between any two radical polymerizable groups contained in one molecule of the radically polymerizable monomer having two or less functional groups and/or one or more functional groups of the radically polymerizable monomer When the number of atoms is too large, the releasability is lowered. Therefore, the divalent linking group is preferably 9 to 100 atoms, more preferably 10 to 80 atoms, and particularly preferably 12 to 50 atoms. The number of atoms between any two radical polymerizable groups contained in one molecule is the number of atoms between the radically polymerizable ethylenically unsaturated groups, and is specifically calculated by the following examples.

2官能以下的自由基聚合性單體及3官能以上的自由基聚合性單體之至少1種較佳為具有下述通式(1)所示的聚氧化烯部分構造。 At least one of the radically polymerizable monomer having two or less functional groups and the radically polymerizable monomer having three or more functional groups preferably has a polyoxyalkylene partial structure represented by the following formula (1).

(通式(1)中,R21表示氫原子或烷基;a表示1~5之整數;l表示2~150之整數)。 (In the formula (1), R 21 represents a hydrogen atom or an alkyl group; a represents an integer of 1 to 5; and represents an integer of 2 to 150).

作為R21所示的烷基,可例示碳數1~10之直鏈、分支或環狀烷基,可舉出甲基、乙基、丙基、辛基、異丙基、第三丁基、異戊基、2-乙基己基、2-甲基己基、環戊基等。 The alkyl group represented by R 21 may, for example, be a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, an octyl group, an isopropyl group and a t-butyl group. , isoamyl, 2-ethylhexyl, 2-methylhexyl, cyclopentyl and the like.

作為R21,特佳為氫原子。 As R 21 , a hydrogen atom is particularly preferred.

a較佳為1或2,特佳為1。 a is preferably 1 or 2, and particularly preferably 1.

1較佳為2~50之整數,更佳為2~25之整數,特佳為2~10之整數。 1 is preferably an integer of 2 to 50, more preferably an integer of 2 to 25, and particularly preferably an integer of 2 to 10.

由1個分子內所含有的任意2個自由基聚合性基之間的原子數皆為9原子以上所成之2價以上的連結基所連結之單體,較佳為2官能以下的自由基聚合性單體,更佳為2官能的自由基聚合性單體。再者,較佳為2官能以下的自由基聚合性單體係具有通式(1)所示的聚氧化烯部分構造,更佳為2官能的自由基聚合性單體係具有通式(1)所示的聚氧化烯部分構造。 A monomer which is bonded to a linking group having two or more valences of 9 or more atoms in the number of atoms of any two radical polymerizable groups contained in one molecule, preferably a free radical having 2 or less functional groups The polymerizable monomer is more preferably a bifunctional radical polymerizable monomer. Further, it is preferred that the radically polymerizable single system having two or less functional groups has a polyoxyalkylene moiety structure represented by the formula (1), and more preferably a bifunctional radical polymerizable single system having a formula (1) The polyoxyalkylene moiety is shown.

再者,作為2官能以下的自由基聚合性單體,特佳為下述通式(2)所示的2官能單體。 In addition, as the radically polymerizable monomer having two or less functional groups, a bifunctional monomer represented by the following formula (2) is particularly preferable.

(通式(2)中,R21、R22及R23各自表示氫原子或烷基;a表示1~5之整數;l表示2~150之整數;X1、X2、Y1及Y2各自表示單鍵或由-CO-、-O-、-NH-、2價的脂肪族基、2價的芳香族基及彼等之組合所組成之群組中選出的2價連結基)。 (In the formula (2), R 21 , R 22 and R 23 each represent a hydrogen atom or an alkyl group; a represents an integer of 1 to 5; l represents an integer of 2 to 150; X 1 , X 2 , Y 1 and Y 2 each represents a single bond or a divalent linking group selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and a combination thereof. .

作為R21、R22及R23所示的烷基,可例示碳數1~10之直鏈、支鏈或環狀烷基,各自可舉出甲基、乙基、丙基、辛基、異丙基、第三丁基、異戊基、2-乙基己基、2-甲基己基、環戊基等。 Examples of the alkyl group represented by R 21 , R 22 and R 23 include a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, and each of them may be a methyl group, an ethyl group, a propyl group or an octyl group. Isopropyl, tert-butyl, isopentyl, 2-ethylhexyl, 2-methylhexyl, cyclopentyl and the like.

作為R21,較佳為氫原子或甲基,特佳為氫原子。 R 21 is preferably a hydrogen atom or a methyl group, and particularly preferably a hydrogen atom.

作為R22及R23,各自特佳為氫原子或甲基。 Each of R 22 and R 23 is particularly preferably a hydrogen atom or a methyl group.

a及l各自係與通式(1)中的a及l同義,較佳的範圍亦同樣。 Each of a and l is synonymous with a and l in the formula (1), and the preferred range is also the same.

作為X1及X2,各自表示單鍵或由-CO-、-O-、-NH-、2價的脂肪族基、2價的芳香族基及彼等之組合所組成之群組中選出的2價連結基。 And X 1 and X 2 each represent a single bond or a group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and a combination thereof The two-valent linkage.

作為X1及X2之具體例,各自可舉出以下的L1~L18。下述例中左側係鍵結於Y1或Y2,右側係鍵結於乙烯性不飽和鍵。 Specific examples of X 1 and X 2 include the following L1 to L18. In the following examples, the left side is bonded to Y 1 or Y 2 , and the right side is bonded to an ethylenically unsaturated bond.

L1:-CO-NH-2價的脂肪族基-O-CO-NH-2價的脂肪族基-O-CO- L1: -CO-NH-2 valence aliphatic-O-CO-NH-2 valency aliphatic-O-CO-

L2:-CO-NH-2價的脂肪族基-O-CO- L2:-CO-NH-2 valency aliphatic group-O-CO-

L3:-CO-2價的脂肪族基-O-CO- L3:-CO-2 valency aliphatic group-O-CO-

L4:-CO-O-2價的脂肪族基-O-CO- L4:-CO-O-2 valency aliphatic group-O-CO-

L5:-2價的脂肪族基-O-CO- L5: -2 valence aliphatic group - O-CO-

L6:-CO-NH-2價的芳香族基-O-CO- L6:-CO-NH-2 valence aromatic group-O-CO-

L7:-CO-2價的芳香族基-O-CO- L7:-CO-2 valence aromatic group-O-CO-

L8:-2價的芳香族基-O-CO- L8:-2 valence aromatic group-O-CO-

L9:-CO-O-2價的脂肪族基-CO-O-2價的脂肪族基-O-CO- L9:-CO-O-2 valency aliphatic-CO-O-2 valency aliphatic-O-CO-

L10:-CO-O-2價的脂肪族基-O-CO-2價的脂肪族基-O-CO- L10: -CO-O-2 valence of aliphatic group-O-CO-2 valency aliphatic group-O-CO-

L11:-CO-O-2價的芳香族基-CO-O-2價的脂肪族基-O-CO- L11:-CO-O-2 valence aromatic group-CO-O-2 valency aliphatic group-O-CO-

L12:-CO-O-2價的芳香族基-O-CO-2價的脂肪族基-O-CO- L12:-CO-O-2 valence aromatic group-O-CO-2 valency aliphatic group-O-CO-

L13:-CO-O-2價的脂肪族基-CO-O-2價的芳香族基-O-CO- L13:-CO-O-2 valence of aliphatic group-CO-O-2 valence aromatic group-O-CO-

L14:-CO-O-2價的脂肪族基-O-CO-2價的芳香族基-O-CO- L14:-CO-O-2 valence of aliphatic group-O-CO-2 valence aromatic group-O-CO-

L15:-CO-O-2價的芳香族基-CO-O-2價的芳香族基-O-CO- L15:-CO-O-2 valence aromatic group-CO-O-2 valence aromatic group-O-CO-

L16:-CO-O-2價的芳香族基-O-CO-2價的芳香族基-O-CO- L16:-CO-O-2 valence aromatic group-O-CO-2 valence aromatic group-O-CO-

L17:-CO-O-2價的芳香族基-O-CO-NH-2價的脂肪族基-O-CO- L17:-CO-O-2 valence aromatic group-O-CO-NH-2 valency aliphatic group-O-CO-

L18:-CO-O-2價的脂肪族基-O-CO-NH-2價的脂肪族基-O-CO- L18:-CO-O-2 valence of aliphatic group-O-CO-NH-2 valency aliphatic group-O-CO-

此處,所謂2價的脂肪族基,就是意指伸烷基、取代伸烷基、伸烯基、取代伸烯基、伸炔基、取代伸炔基或聚伸烷基氧基。其中,較佳為伸烷基、取代伸烷基、伸烯基及取代伸烯基,更佳為伸烷基及取代伸烷基。此等之基較佳為不具有取代基。 Here, the divalent aliphatic group means an alkyl group, a substituted alkyl group, an alkenyl group, a substituted alkenyl group, an alkynyl group, a substituted alkynyl group or a polyalkylene group. Among them, an alkyl group, a substituted alkyl group, an alkenyl group and a substituted alkenyl group are preferred, and an alkyl group and a substituted alkyl group are more preferred. These groups preferably have no substituents.

2價的脂肪族基係鏈狀構造比環狀構造還佳,而且直鏈狀構造係比具有分支的鏈狀構造還佳。2價的脂肪族基之碳原子數較佳為1~20,更佳為1~15,尤佳為1~12,尤較佳為1~10,尤更佳為1~8,特佳為1~4。 The divalent aliphatic group chain structure is better than the ring structure, and the linear structure is better than the branched chain structure. The number of carbon atoms of the divalent aliphatic group is preferably from 1 to 20, more preferably from 1 to 15, particularly preferably from 1 to 12, particularly preferably from 1 to 10, particularly preferably from 1 to 8, particularly preferably 1~4.

作為2價的脂肪族基之取代基之例,可舉出鹵素原子(F、Cl、Br、I)、羥基、羧基、胺基、氰基、芳基、烷氧基、芳氧基、醯基、烷氧羰基、芳氧羰基、醯氧基、單烷基胺基、二烷基胺基、芳基胺基及二芳基胺基等。 Examples of the substituent of the divalent aliphatic group include a halogen atom (F, Cl, Br, I), a hydroxyl group, a carboxyl group, an amine group, a cyano group, an aryl group, an alkoxy group, an aryloxy group, and an anthracene group. Alkyl, alkoxycarbonyl, aryloxycarbonyl, decyloxy, monoalkylamino, dialkylamino, arylamino and diarylamine.

作為2價的芳香族基之例,可舉出伸苯基、取代伸苯基、伸萘基及取代伸萘基,較佳為伸苯基。作為2價的芳香族基的取代基之例,除了上述2價的脂肪族基之取代基之例,還可舉出烷基。 Examples of the divalent aromatic group include a phenylene group, a substituted phenyl group, an anthranyl group and a substituted anthranyl group, and a phenyl group is preferred. Examples of the substituent of the divalent aromatic group include an alkyl group in addition to the substituent of the above divalent aliphatic group.

Y1及Y2各自表示單鍵或由-CO-、-O-、-NH-、2價的脂肪族基、2價的芳香族基及彼等之組合所組成之群組中選出的2價連結基。Y1、Y2中的任一個較佳為具有2價的芳香族基或聚氧化烯構造,特佳為具有2價的芳香族基及聚氧化烯構造。2價的芳香族基較佳為由1個或2以上的苯環所構成,更佳為伸苯基。 Y 1 and Y 2 each represent a single bond or 2 selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and a combination thereof. Price linkage. Any of Y 1 and Y 2 preferably has a divalent aromatic group or a polyoxyalkylene structure, and particularly preferably has a divalent aromatic group and a polyoxyalkylene structure. The divalent aromatic group is preferably composed of one or two or more benzene rings, more preferably a phenyl group.

再者,於本發明中,2官能以下的自由基聚合性單體及/或3官能以上的自由基聚合性單體較佳為僅由碳原子、氧原子、氫原子及氮原子中選出的原子所構成,更佳為僅由碳原子、氧原子及氫原子所構成。 In the present invention, the radically polymerizable monomer having at least two functional groups and/or the radically polymerizable monomer having three or more functional groups are preferably selected from only carbon atoms, oxygen atoms, hydrogen atoms and nitrogen atoms. It is composed of atoms, and more preferably consists of only carbon atoms, oxygen atoms, and hydrogen atoms.

作為分子內最近的自由基聚合性基由至少9原子所構成的2價連結基所連結之自由基聚合性單體,具體地可舉出以下構造所示之自由基聚合性單體,但不受此等所限定。 The radical polymerizable monomer to which the radical polymerizable group having the most recent radical polymerizable group is bonded by a divalent linking group of at least 9 atoms is specifically a radical polymerizable monomer represented by the following structure, but Limited by these.

(Me表示甲基)。 (Me stands for methyl).

2官能以下的自由基聚合性單體與3官能以上的自由基聚合性單體之比率(質量比)較佳為95/5~20/80,更佳為85/15~20/80,尤佳為80/20~20/80,尤更佳為80/20~40/60,特佳為80/20~50/50。 The ratio (mass ratio) of the radically polymerizable monomer having two or less functional groups to the radically polymerizable monomer having three or more functional groups is preferably 95/5 to 20/80, more preferably 85/15 to 20/80, particularly Good for 80/20~20/80, especially better for 80/20~40/60, especially good for 80/20~50/50.

作為2官能以下的自由基聚合性單體及3官能以上的自由基聚合性單體之市售品,可舉出Blemmer PME400(日油(股)製))、NK Ester A-BPE-4、NK Ester A-BPE-10、NK Ester A-TMP-3EO、NK Ester AD-TMP、NK Ester A-DPH(新中村化學工業(股)製)、二乙烯基苯(和光純藥工業(股)製)、Light Acrylate TMP-A(共榮社化學(股)製)、異三聚氰酸三烯丙酯(東京化成工業(股)製)等。 The commercially available product of a bifunctional or less radical polymerizable monomer and a trifunctional or more radical polymerizable monomer includes Blemmer PME400 (manufactured by Nippon Oil Co., Ltd.) and NK Ester A-BPE-4. NK Ester A-BPE-10, NK Ester A-TMP-3EO, NK Ester AD-TMP, NK Ester A-DPH (manufactured by Shin-Nakamura Chemical Industry Co., Ltd.), Divinylbenzene (Wako Pure Chemical Industries Co., Ltd.) , Light Acrylate TMP-A (manufactured by Kyoeisha Chemical Co., Ltd.), triallyl cyanurate (manufactured by Tokyo Chemical Industry Co., Ltd.), and the like.

聚合性單體之含量,從良好的接著強度與剝離性之觀點來看,相對於前述接著劑層前驅物的全部固體成分,較佳為20~100質量%,更佳為30~95質量%, 尤佳為50~90質量%。聚合性單體係可為僅1種類,也可為2種類以上。於聚合性單體為2種類以上時,其合計較佳為上述範圍。 The content of the polymerizable monomer is preferably from 20 to 100% by mass, more preferably from 30 to 95% by mass, based on the total adhesive strength of the adhesive layer precursor from the viewpoint of good adhesion strength and peelability. , Especially good is 50~90% by mass. The polymerizable single system may be only one type or two or more types. When the number of the polymerizable monomers is two or more, the total amount is preferably in the above range.

[具有氟原子或矽原子的聚合性單體及/或聚合性寡聚物] [Polymerizable monomer and/or polymerizable oligomer having a fluorine atom or a halogen atom]

本發明中之聚合性單體及/或聚合性寡聚物特佳為具有氟原子及/或矽原子的聚合性化合物。具有氟原子及/或矽原子的聚合性化合物,較佳係一分子中含有1個以上的氟原子或矽原子之自由基聚合性單體及/或聚合性寡聚物,特佳為一分子中含有2個以上的氟原子之具有一般稱為全氟基之基的聚合性單體及/或聚合性寡聚物。 The polymerizable monomer and/or polymerizable oligomer in the present invention is particularly preferably a polymerizable compound having a fluorine atom and/or a ruthenium atom. The polymerizable compound having a fluorine atom and/or a ruthenium atom is preferably a radical polymerizable monomer and/or a polymerizable oligomer containing one or more fluorine atoms or ruthenium atoms in one molecule, and particularly preferably one molecule. A polymerizable monomer and/or a polymerizable oligomer having two or more fluorine atoms and having a group generally referred to as a perfluoro group.

具有氟原子及/或矽原子的自由基聚合性化合物,係具有自由基聚合性官能基者,自由基聚合性官能基係沒有特別的限制,但較佳為不飽和基(乙烯性不飽和鍵結基等)。 The radically polymerizable compound having a fluorine atom and/or a ruthenium atom is a radical polymerizable functional group, and the radical polymerizable functional group is not particularly limited, but is preferably an unsaturated group (ethylenically unsaturated bond). Knot base, etc.).

具有氟原子及/或矽原子的自由基聚合性化合物,較佳為具有2個以上的自由基聚合性官能基,藉此可進一步提高積層體之經過高溫的製程後之對於處理過構件的暫時支撐之剝離性。 The radically polymerizable compound having a fluorine atom and/or a ruthenium atom preferably has two or more radical polymerizable functional groups, whereby the temporary treatment of the processed member after the high temperature process of the laminate can be further improved. The peeling of the support.

[[具有氟原子的聚合性單體及/或聚合性寡聚物]] [[Polymerizable monomer and/or polymerizable oligomer having a fluorine atom]]

具有氟原子的聚合性單體及/或聚合性寡聚物,係可由眾所周知的單體中選擇,較佳為以聚合性基作為交聯性基之交聯劑。作為交聯性基,例如可舉出具有羥基或可水解的基之矽烷基(例如烷氧基矽烷基、醯氧基矽烷基 等)、具有反應性不飽和雙鍵之基((甲基)丙烯醯基、烯丙基、乙烯氧基等)、開環聚合反應性基(環氧基、氧雜環丁烷基、唑基等)、具有活性氫原子之基(例如羥基、羧基、胺基、胺甲醯基、巰基、β-酮酯基、氫矽烷基、矽烷醇基等)、可經酸酐、親核劑取代之基(活性鹵素原子、磺酸酯等)等。 The polymerizable monomer having a fluorine atom and/or the polymerizable oligomer may be selected from well-known monomers, and a crosslinking agent having a polymerizable group as a crosslinkable group is preferred. Examples of the crosslinkable group include a decyl group having a hydroxyl group or a hydrolyzable group (for example, an alkoxyalkyl group, a decyloxyalkyl group, etc.), and a group having a reactive unsaturated double bond ((meth)) Acrylhydrazine, allyl, vinyloxy, etc.), ring-opening polymerization reactive group (epoxy group, oxetane group, An azole group or the like, a group having an active hydrogen atom (for example, a hydroxyl group, a carboxyl group, an amine group, an amine methyl sulfonyl group, a decyl group, a β-ketoester group, a hydrodecyl group, a decyl alcohol group, etc.), an acid anhydride, a nucleophilic agent a substituted group (active halogen atom, sulfonate, etc.) or the like.

具有氟原子的自由基聚合性單體及/或聚合性寡聚物,較佳為以下之通式(1)可表示之化合物。 The radically polymerizable monomer having a fluorine atom and/or the polymerizable oligomer is preferably a compound represented by the following formula (1).

通式(I):Rf{-L-Y}n(式中,Rf至少包含碳原子及氟原子,亦可包含氧原子及氫原子之任一者,表示鏈狀或環狀的n價基,n表示2以上之整數;L表示單鍵或二價連結基;Y表示聚合性基)。 General formula (I): Rf{-LY}n (wherein Rf contains at least a carbon atom and a fluorine atom, and may contain either an oxygen atom or a hydrogen atom, and represents a chain or cyclic n-valent group, n An integer of 2 or more; L represents a single bond or a divalent linking group; and Y represents a polymerizable group).

上述通式(I)中,Y係聚合性基,例如具有羥基或可水解的基之矽烷基(例如烷氧基矽烷基、醯氧基矽烷基等)、具有反應性不飽和雙鍵之基((甲基)丙烯醯基、烯丙基、乙烯氧基等)、開環聚合反應性基(環氧基、氧雜環丁烷基、唑基等)、具有活性氫原子之基(例如羥基、羧基、胺基、胺甲醯基、巰基、β-酮酯基、氫矽烷基、矽烷醇基等)、可經酸酐、親核劑取代之基(活性鹵素原子、磺酸酯等)等。 In the above formula (I), the Y-based polymerizable group is, for example, a decyl group having a hydroxyl group or a hydrolyzable group (e.g., an alkoxyalkyl group, a decyloxyalkyl group, etc.), and a group having a reactive unsaturated double bond. ((meth)acryloyl group, allyl group, vinyloxy group, etc.), ring-opening polymerization reactive group (epoxy group, oxetane group, An azole group or the like, a group having an active hydrogen atom (for example, a hydroxyl group, a carboxyl group, an amine group, an amine methyl sulfonyl group, a decyl group, a β-ketoester group, a hydrodecyl group, a decyl alcohol group, etc.), an acid anhydride, a nucleophilic agent a substituted group (active halogen atom, sulfonate, etc.) or the like.

Y較佳表示自由基聚合性基,更佳為具有反應性不飽和雙鍵之基。具體地,T較佳表示下述通式(9)所示的自由基聚合性官能基。 Y preferably represents a radical polymerizable group, and more preferably a group having a reactive unsaturated double bond. Specifically, T preferably represents a radical polymerizable functional group represented by the following formula (9).

(通式(9)中,R901~R903各自獨立地表示氫原子、烷基或芳基;虛線表示對L連結的基之鍵結)。 (In the formula (9), R 901 to R 903 each independently represent a hydrogen atom, an alkyl group or an aryl group; and a broken line indicates a bond to a group to which L is bonded).

烷基之例較佳為碳數1~8的烷基,例如可舉出甲基、乙基、丙基、辛基、異丙基、第三丁基、異戊基、2-乙基己基、2-甲基己基、環戊基等。芳基之例較佳為碳數6~12的芳基,可舉出苯基、1-萘基、2-萘基等。作為R901~R903,尤佳為氫原子或甲基。 The alkyl group is preferably an alkyl group having 1 to 8 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, an octyl group, an isopropyl group, a tert-butyl group, an isopentyl group, and a 2-ethylhexyl group. , 2-methylhexyl, cyclopentyl and the like. The aryl group is preferably an aryl group having 6 to 12 carbon atoms, and examples thereof include a phenyl group, a 1-naphthyl group, and a 2-naphthyl group. As R 901 to R 903 , a hydrogen atom or a methyl group is particularly preferable.

L表示單鍵或二價連結基。二價連結基表示2價的脂肪族基、2價的芳香族基、-O-、-S-、-CO-、-N(R)-、及將此等組合2種以上而得之2價連結基。惟,前述R表示氫原子或碳數1~5的烷基。 L represents a single bond or a divalent linking group. The divalent linking group represents a divalent aliphatic group, a divalent aromatic group, -O-, -S-, -CO-, -N(R)-, and two or more of these are combined. Price linkage. However, the above R represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms.

當L具有伸烷基或伸芳基時,伸烷基及伸芳基較佳為經鹵素原子取代,更佳為經氟原子取代。 When L has an alkylene group or an extended aryl group, the alkyl group and the aryl group are preferably substituted by a halogen atom, more preferably by a fluorine atom.

Rf至少包含碳原子及氟原子,亦可包含氧原子及氫原子之任一者,表示鏈狀或環狀的n價基。Rf亦可為具有具氟原子的重複單元之線狀或分支狀的高分子構造。 Rf contains at least a carbon atom and a fluorine atom, and may contain either an oxygen atom or a hydrogen atom, and represents a chain or a cyclic n-valent group. Rf may also be a linear or branched polymer structure having a repeating unit having a fluorine atom.

作為如此具有氟原子的單體,亦可較宜使用日本特開2011-48358號公報的段落編號0019~0033中記載之化合物,此等之內容係併入本案說明書中。 As the monomer having a fluorine atom as described above, the compound described in Paragraph No. 0019 to 0033 of JP-A-2011-48358 is preferably used, and the contents are incorporated in the specification.

又,具有氟原子的自由基聚合性單體,亦較佳為由下述結構式(1)、(2)、(3)、(4)及(5)表示的化合物 中選出至少1種。 Further, the radical polymerizable monomer having a fluorine atom is preferably a compound represented by the following structural formulas (1), (2), (3), (4) and (5). Choose at least one of them.

CH2=CR1COOR2Rf...結構式(1) CH 2 =CR 1 COOR 2 R f . . . Structural formula (1)

(結構式(1)中,R1表示氫原子或甲基;R2表示-CpH2p-、-C(CpH2p+1)H-、-CH2C(CpH2p+1)H-或-CH2CH2O-;Rf表示-CnF2n+1、-(CF2)nH、-CnF2n+1-CF3、-(CF2)pOCnH2nCiF2i+1、-(CF2)pOCmH2mCiF2iH、-N(CpH2p+1)COCnF2n+1或-N(CpH2p+1)SO2CnF2n+1;惟,p表示1~10之整數,n表示1~16之整數,m表示0~10之整數,i表示0~16之整數)。 In (formula (1), R 1 represents a hydrogen atom or a methyl group; R 2 represents -C p H 2p -, - C (C p H 2p + 1) H -, - CH 2 C (C p H 2p + 1 ) H- or -CH 2 CH 2 O-; R f represents -C n F 2n+1 , -(CF 2 ) n H, -C n F 2n+1 -CF 3 , -(CF 2 ) p OC n H 2n C i F 2i+1 , -(CF 2 ) p OC m H 2m C i F 2i H, -N(C p H 2p+1 )COC n F 2n+1 or -N(C p H 2p +1 )SO 2 C n F 2n+1 ; However, p represents an integer from 1 to 10, n represents an integer from 1 to 16, m represents an integer from 0 to 10, and i represents an integer from 0 to 16.

CF2=CFORg...結構式(2) CF 2 =CFOR g . . . Structural formula (2)

(結構式(2)中,Rg表示碳數1~20的氟烷基)。 (In the structural formula (2), R g represents a fluoroalkyl group having 1 to 20 carbon atoms).

CH2=CHRg...結構式(3) CH 2 =CHR g . . . Structural formula (3)

(結構式(3)中,Rg表示碳數1~20的氟烷基)。 (In the structural formula (3), R g represents a fluoroalkyl group having 1 to 20 carbon atoms).

CH2=CR3COOR5RjR6OCOCR4=CH2...結構式(4) CH 2 =CR 3 COOR 5 R j R 6 OCOCR 4 =CH 2 . . . Structural formula (4)

(結構式(4)中,R3及R4表示氫原子或甲基;R5及R6表示-CqH2q-、-C(CqH2q+1)H-、-CH2C(CqH2q+1)H-或-CH2CH2O-,Rj表示-CtF2t;q為1~10之整數,t為1~16之整數)。 (In Structural Formula (4), R 3 and R 4 represent a hydrogen atom or a methyl group; and R 5 and R 6 represent -C q H 2q -, -C(C q H 2q+1 )H-, -CH 2 C (C q H 2q+1 )H- or -CH 2 CH 2 O-, R j represents -C t F 2t ; q is an integer from 1 to 10, and t is an integer from 1 to 16).

CH2=CHR7COOCH2(CH2Rk)CHOCOCR8=CH2...結構式(5) CH 2 =CHR 7 COOCH 2 (CH 2 R k )CHOCOCR 8 =CH 2 . . . Structural formula (5)

(結構式(5)中,R7及R8表示氫原子或甲基;Rk為-CyF2y+1;y為1~16之整數)。 (In Structural Formula (5), R 7 and R 8 represent a hydrogen atom or a methyl group; R k is -CyF 2y+1 ; y is an integer of 1 to 16).

作為前述結構式(1)所示之單體,例如可舉出:CF3(CF2)5CH2CH2OCOCH=CH2、CF3CH2OCOCH=CH2 、CF3(CF2)4CH2CH2OCOC(CH3)=CH2、C7F15CON(C2H5)CH2OCOC(CH3)=CH2、CF3(CF2)7SO2N(CH2)CH2CH2OCOCH=CH2、CF2(CF2)7SO2N(C3H7)CH2CH2OCOCH=CH2、C2F5SO2N(C3H7)CH2CH2OCOC(CH3)=CH2、(CF3)2CF(CF2)6(CH2)3OCOCH=CH2、(CF3)2CF(CF2)10(CH2)3OCOC(CH3)=CH2、CF3(CF2)4CH(CH3)OCOC(CH3)=CH2、CF3CH2OCH2CH2OCOCH=CH2、C2F5(CH2CH2O)2CH2OCOCH=CH2、(CF3)2CFO(CH2)5OCOCH=CH2、CF3(CF2)4OCH2CH2OCOC(CH3)=CH2、C2F5CON(C2H5)CH2OCOCH=CH2、CF3(CF2)2CON(CH3)CH(CH3)CH2OCOCH=CH2、H(CF2)6C(C2H5)OCOC(CH3)=CH2、H(CF2)8CH2OCOCH=CH2、H(CF2)4CH2OCOCH=CH2、H(CF2)CH2OCOC(CH3)=CH2、CF3(CF2)7SO2N(CH3)CH2CH2OCOC(CH3)=CH2、CF3(CF2)7SO2N(CH3)(CH2)10OCOCH=CH2、C2F5SO2N(C2H5)CH2CH2OCOC(CH3)=CH2、CF3(CF2)7SO2N(CH3)(CH2)4OCOCH=CH2、C2F5SO2N(C2H5)C(C2H5)HCH2OCOCH=CH2等。此等係可單獨1種使用,也可併用2種以上。 Examples of the monomer represented by the above structural formula (1) include CF 3 (CF 2 ) 5 CH 2 CH 2 OCOCH=CH 2 , CF 3 CH 2 OCOCH=CH 2 , and CF 3 (CF 2 ) 4 . CH 2 CH 2 OCOC(CH 3 )=CH 2 , C 7 F 15 CON(C 2 H 5 )CH 2 OCOC(CH 3 )=CH 2 , CF 3 (CF 2 ) 7 SO 2 N(CH 2 )CH 2 CH 2 OCOCH=CH 2 , CF 2 (CF 2 ) 7 SO 2 N(C 3 H 7 )CH 2 CH 2 OCOCH=CH 2 , C 2 F 5 SO 2 N(C 3 H 7 )CH 2 CH 2 OCOC(CH 3 )=CH 2 , (CF 3 ) 2 CF(CF 2 ) 6 (CH 2 ) 3 OCOCH=CH 2 , (CF 3 ) 2 CF(CF 2 ) 10 (CH 2 ) 3 OCOC (CH 3 )=CH 2 , CF 3 (CF 2 ) 4 CH(CH 3 )OCOC(CH 3 )=CH 2 , CF 3 CH 2 OCH 2 CH 2 OCOCH=CH 2 , C 2 F 5 (CH 2 CH 2 O) 2 CH 2 OCOCH=CH 2 , (CF 3 ) 2 CFO(CH 2 ) 5 OCOCH=CH 2 , CF 3 (CF 2 ) 4 OCH 2 CH 2 OCOC(CH 3 )=CH 2 , C 2 F 5 CON( C 2 H 5 )CH 2 OCOCH=CH 2 , CF 3 (CF 2 ) 2 CON(CH 3 )CH(CH 3 )CH 2 OCOCH=CH 2 , H(CF 2 ) 6 C(C 2 H 5 )OCOC (CH 3 )=CH 2 ,H(CF 2 ) 8 CH 2 OCOCH=CH 2 , H(CF 2 ) 4 CH 2 OCOCH=CH 2 , H(CF 2 )CH 2 OCOC(CH 3 )=CH 2 , CF 3 (CF 2 ) 7 SO 2 N(CH 3 )CH 2 CH 2 OCOC(CH 3 )=CH 2 , CF 3 (CF 2 ) 7 SO 2 N(CH 3 )(CH 2 10 OCOCH=CH 2 , C 2 F 5 SO 2 N(C 2 H 5 )CH 2 CH 2 OCOC(CH 3 )=CH 2 , CF 3 (CF 2 ) 7 SO 2 N(CH 3 )(CH 2 4 OCOCH=CH 2 , C 2 F 5 SO 2 N(C 2 H 5 )C(C 2 H 5 )HCH 2 OCOCH=CH 2 and the like. These may be used alone or in combination of two or more.

作為前述結構式(2)或(3)所示之氟烷基化烯烴,例如可舉出C3F7CH=CH2、C4F9CH=CH2、C10F21CH=CH2、C3F7OCF=CF2、C7F15OCF=CF2、C8F17OCF=CF2等。 Examples of the fluoroalkylated olefin represented by the above structural formula (2) or (3) include C 3 F 7 CH=CH 2 , C 4 F 9 CH=CH 2 , and C 10 F 21 CH=CH 2 . C 3 F 7 OCF=CF 2 , C 7 F 15 OCF=CF 2 , C 8 F 17 OCF=CF 2 and the like.

作為前述結構式(4)或(5)所示之單體,例如可舉出CH2=CHCOOCH2(CF2)3CH2OCOCH=CH2、CH2=CHCOOCH2(CF2)6CH2OCOCH=CH2、CH2=CHCOOCH2CH(CH2C8F17)OCOCH=CH2等。 As the monomer of formula (4) or (5) of, for example, include CH 2 = CHCOOCH 2 (CF 2 ) 3 CH 2 OCOCH = CH 2, CH 2 = CHCOOCH 2 (CF 2) 6 CH 2 OCOCH=CH 2 , CH 2 =CHCOOCH 2 CH(CH 2 C 8 F 17 )OCOCH=CH 2 and the like.

又,作為具有氟原子的自由基聚合性單體及/或聚合性寡聚物,亦較宜使用具有氟原子的重複單元與具有自由基聚合性官能基的重複單元之寡聚物。 Further, as the radical polymerizable monomer having a fluorine atom and/or the polymerizable oligomer, an oligomer having a repeating unit having a fluorine atom and a repeating unit having a radical polymerizable functional group is preferably used.

作為具有氟原子的重複單元,較佳為由下述式(6)、(7)及(10)所示之重複單元的至少1種中選擇。 The repeating unit having a fluorine atom is preferably selected from at least one of the repeating units represented by the following formulas (6), (7) and (10).

式(6)中,R1、R2、R3及R4各自獨立地表示氫原子、鹵素原子、羥基或1價有機基,R1、R2、R3及R4之內的至少一者係氟原子或具有氟原子之1價有機基。 In the formula (6), R 1 , R 2 , R 3 and R 4 each independently represent a hydrogen atom, a halogen atom, a hydroxyl group or a monovalent organic group, and at least one of R 1 , R 2 , R 3 and R 4 . It is a fluorine atom or a monovalent organic group having a fluorine atom.

式(7)中,R5、R6、R7各自獨立地表示氫原子、鹵素原子、羥基或1價的有機基,Y1表示單鍵或由-CO-、-O-、-NH-、2價的脂肪族基、2價的芳香族基及彼等之組合所組成之群組中選出的2價連結基。Rf表示氟原子或具有氟原子的1價有機基。 In the formula (7), R 5 , R 6 and R 7 each independently represent a hydrogen atom, a halogen atom, a hydroxyl group or a monovalent organic group, and Y 1 represents a single bond or by -CO-, -O-, -NH- A divalent linking group selected from the group consisting of a divalent aliphatic group, a divalent aromatic group, and a combination thereof. Rf represents a fluorine atom or a monovalent organic group having a fluorine atom.

式(10)中,R8、R9、R10、R11、R12、R13各自獨立地表示氫原子、鹵素原子、羥基或1價有機基,Y2及Y3表示單鍵或由-CO-、-O-、-NH-、2價的脂肪族基、2價的芳香族基及彼等之組合所組成之群組中選出的2價連結基。Rf表示具有氟原子的2價有機基。 In the formula (10), R 8 , R 9 , R 10 , R 11 , R 12 and R 13 each independently represent a hydrogen atom, a halogen atom, a hydroxyl group or a monovalent organic group, and Y 2 and Y 3 represent a single bond or a divalent linking group selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and a combination thereof. Rf represents a divalent organic group having a fluorine atom.

作為式(6)及式(7)中之具有氟原子的1價有機基,並沒有特別的限定,但較佳為碳數1~30的含氟烷基 ,更佳為碳數1~20,特佳為碳數1~15的含氟烷基。此含氟烷基係可為直鏈(例如-CF2CF3、-CH2(CF2)4H、-CH2(CF2)8CF3、-CH2CH2(CF2)4H等),也可具有分支構造(例如-CH(CF3)2、-CH2CF(CF3)2、-CH(CH3)CF2CF3、-CH(CH3)(CF2)5CF2H等),且亦可具有脂環式構造(較佳為5員環或6員環,例如全氟環己基、全氟環戊基或經此等取代之烷基等),也可具有醚鍵(例如-CH2OCH2CF2CF3、-CH2CH2OCH2C4F8H、-CH2CH2OCH2CH2C8F17、-CH2CF2OCF2CF2OCF2CF2H等)。又,亦可為全氟烷基。 The monovalent organic group having a fluorine atom in the formulae (6) and (7) is not particularly limited, but is preferably a fluorine-containing alkyl group having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms. Particularly preferred is a fluorine-containing alkyl group having 1 to 15 carbon atoms. The fluorine-containing alkyl group may be linear (for example, -CF 2 CF 3 , -CH 2 (CF 2 ) 4 H, -CH 2 (CF 2 ) 8 CF 3 , -CH 2 CH 2 (CF 2 ) 4 H And so on, may also have a branched structure (for example, -CH(CF 3 ) 2 , -CH 2 CF(CF 3 ) 2 , -CH(CH 3 )CF 2 CF 3 , -CH(CH 3 )(CF 2 ) 5 CF 2 H, etc.), and may also have an alicyclic structure (preferably a 5-membered ring or a 6-membered ring, such as a perfluorocyclohexyl group, a perfluorocyclopentyl group or an alkyl group substituted therewith), or Has an ether linkage (eg, -CH 2 OCH 2 CF 2 CF 3 , -CH 2 CH 2 OCH 2 C 4 F 8 H, -CH 2 CH 2 OCH 2 CH 2 C 8 F 17 , -CH 2 CF 2 OCF 2 CF 2 OCF 2 CF 2 H, etc.). Further, it may be a perfluoroalkyl group.

作為式(10)中之具有氟原子的2價有機基,並沒有特別的限定,但較佳為碳數1~30的含氟伸烷基,更佳為碳數1~20,特佳為碳數1~15的含氟伸烷基。此含氟伸烷基係可為直鏈(例如-CF2CF2-、-CH2(CF2)4-、-CH2(CF2)8CF2-、-CH2CH2(CF2)4-等),也可具有分支構造(例如-CH(CF3)CF2-、-CH2CF(CF3)CF2-、-CH(CH3)CF2CF2-、-CH(CH3)(CF2)5CF2-等),且亦可為具有脂環式構造(較佳為5員環或6員環,例如全氟環己基、全氟環戊基或經此等取代之烷基等)的連結基,也可具有醚鍵(例如-CH2OCH2CF2CF2-、-CH2CH2OCH2C4F8-、-CH2CH2OCH2CH2C8F16-、-CH2CF2OCF2CF2OCF2CF2-、-CH2CF2OCF2CF2OCF2CF2-、聚全氟伸烷基醚鏈等)。又,亦可為全氟伸烷基。 The divalent organic group having a fluorine atom in the formula (10) is not particularly limited, but is preferably a fluorine-containing alkylene group having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, particularly preferably A fluorine-containing alkyl group having 1 to 15 carbon atoms. The fluorine-containing alkyl group may be linear (for example, -CF 2 CF 2 -, -CH 2 (CF 2 ) 4 -, -CH 2 (CF 2 ) 8 CF 2 -, -CH 2 CH 2 (CF 2 4 -etc), may also have a branched structure (eg -CH(CF 3 )CF 2 -, -CH 2 CF(CF 3 )CF 2 -, -CH(CH 3 )CF 2 CF 2 -, -CH( CH 3 )(CF 2 ) 5 CF 2 -etc.), and may also have an alicyclic structure (preferably a 5-membered ring or a 6-membered ring, such as perfluorocyclohexyl, perfluorocyclopentyl or such The linking group of the substituted alkyl group or the like may also have an ether bond (for example, -CH 2 OCH 2 CF 2 CF 2 -, -CH 2 CH 2 OCH 2 C 4 F 8 -, -CH 2 CH 2 OCH 2 CH 2 C 8 F 16 -, -CH 2 CF 2 OCF 2 CF 2 OCF 2 CF 2 -, -CH 2 CF 2 OCF 2 CF 2 OCF 2 CF 2 -, polyperfluoroalkylene ether chain, etc.). Further, it may be a perfluoroalkylene group.

式(6)、(7)、(10)中之1價有機基,較佳為由3~10價的非金屬原子所構成之有機基,例如可舉出由1至60個的碳原子、0個至10個的氮原子、0個至50個的氧 原子、1個至100個的氫原子、及0個至20個的硫原子中選出的至少1種以上之元素所構成的有機基。 The monovalent organic group in the formulae (6), (7), and (10) is preferably an organic group composed of a non-metal atom having 3 to 10 valences, and examples thereof include 1 to 60 carbon atoms. 0 to 10 nitrogen atoms, 0 to 50 oxygen An organic group composed of at least one element selected from the group consisting of an atom, one to 100 hydrogen atoms, and 0 to 20 sulfur atoms.

作為更具體之例,可舉出下述之構造以單獨或複數組合而構成的有機基。 More specifically, an organic group which is constituted by a combination of the following structures, alone or in combination, may be mentioned.

1價有機基亦可更具有取代基,作為可導入的取代基,例如可舉出鹵素原子、羥基、羧基、磺酸根基、硝基、氰基、醯胺基、胺基、烷基、烯基、炔基、芳基、取代氧基、取代磺醯基、取代羰基、取代亞磺醯基、磺基、膦醯基、膦酸根基、矽烷基、雜環基等。又,有機基亦可包含醚鍵、醚鍵、脲鍵。 The monovalent organic group may further have a substituent. Examples of the substituent which may be introduced include a halogen atom, a hydroxyl group, a carboxyl group, a sulfonate group, a nitro group, a cyano group, a decylamino group, an amine group, an alkyl group, and an alkene group. Alkyl, alkynyl, aryl, substituted oxy, substituted sulfonyl, substituted carbonyl, substituted sulfinyl, sulfo, phosphonium, phosphonate, decyl, heterocyclic, and the like. Further, the organic group may further contain an ether bond, an ether bond, or a urea bond.

1價有機基較佳為烷基、烯基、炔基、芳基。烷基更佳為碳數1~8的烷基,例如可舉出甲基、乙基、丙基、辛基、異丙基、第三丁基、異戊基、2-乙基己基、2-甲基己基、環戊基等。較佳為烯基、碳數2~20的烯基,例如,可舉出乙烯基、烯丙基、異戊二烯基、香葉基、油基等。炔基較佳為碳數3~10的炔基,乙炔基、炔丙基、三甲基矽烷基乙炔基等。芳基較佳為碳數6~12的芳基,可舉出苯基、1-萘基、2-萘基等。再者,雜環基較佳為碳數2~10的雜環基,可舉出呋喃基、苯硫基、吡啶基等。 The monovalent organic group is preferably an alkyl group, an alkenyl group, an alkynyl group or an aryl group. The alkyl group is more preferably an alkyl group having 1 to 8 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, an octyl group, an isopropyl group, a tert-butyl group, an isopentyl group, a 2-ethylhexyl group, and 2 - Methylhexyl, cyclopentyl and the like. The alkenyl group and the alkenyl group having 2 to 20 carbon atoms are preferable, and examples thereof include a vinyl group, an allyl group, a prenyl group, a geranyl group, and an oil group. The alkynyl group is preferably an alkynyl group having 3 to 10 carbon atoms, an ethynyl group, a propargyl group, a trimethyldecyl ethynyl group or the like. The aryl group is preferably an aryl group having 6 to 12 carbon atoms, and examples thereof include a phenyl group, a 1-naphthyl group, and a 2-naphthyl group. Further, the heterocyclic group is preferably a heterocyclic group having 2 to 10 carbon atoms, and examples thereof include a furyl group, a phenylthio group, and a pyridyl group.

作為式(6)中之R1、R2、R3及R4、式(7)中之R5、R6、R7、式(10)中之R8、R9、R10、R11、R12、R13所示的1價有機基,較佳為烷基或芳基。 R 1 , R 2 , R 3 and R 4 in the formula (6), R 5 , R 6 and R 7 in the formula (7), R 8 , R 9 , R 10 and R in the formula (10) 11. The monovalent organic group represented by R 12 and R 13 is preferably an alkyl group or an aryl group.

烷基之例較佳為碳數1~8的烷基,例如可舉出甲基、乙基、丙基、辛基、異丙基、第三丁基、異戊基、2- 乙基己基、2-甲基己基、環戊基等。芳基之例較佳為碳數6~12的芳基,可舉出苯基、1-萘基、2-萘基等。作為R901~R903,尤佳為氫原子或甲基。 The alkyl group is preferably an alkyl group having 1 to 8 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, an octyl group, an isopropyl group, a tert-butyl group, an isopentyl group, and a 2-ethylhexyl group. , 2-methylhexyl, cyclopentyl and the like. The aryl group is preferably an aryl group having 6 to 12 carbon atoms, and examples thereof include a phenyl group, a 1-naphthyl group, and a 2-naphthyl group. As R 901 to R 903 , a hydrogen atom or a methyl group is particularly preferable.

以下舉出由式(7)中之Y1及式(10)中之Y2及Y3所示的-CO-、-O-、-NH-、2價的脂肪族基、2價的芳香族基及彼等之組合所組成之群組中選出的2價連結基之具體例。再者,下述例中左側係鍵結於主鏈,右側係鍵結於Rf。 Hereinafter, -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group represented by Y 1 in the formula (7) and Y 2 and Y 3 in the formula (10), Specific examples of the divalent linking group selected from the group consisting of a group and a combination thereof. Further, in the following examples, the left side is bonded to the main chain, and the right side is bonded to Rf.

L1:-CO-NH-2價的脂肪族基-O-CO-NH-2價的脂肪族基-O-CO- L1: -CO-NH-2 valence aliphatic-O-CO-NH-2 valency aliphatic-O-CO-

L2:-CO-NH-2價的脂肪族基-O-CO- L2:-CO-NH-2 valency aliphatic group-O-CO-

L3:-CO-2價的脂肪族基-O-CO- L3:-CO-2 valency aliphatic group-O-CO-

L4:-CO-O-2價的脂肪族基-O-CO- L4:-CO-O-2 valency aliphatic group-O-CO-

L5:-2價的脂肪族基-O-CO- L5: -2 valence aliphatic group - O-CO-

L6:-CO-NH-2價的芳香族基-O-CO- L6:-CO-NH-2 valence aromatic group-O-CO-

L7:-CO-2價的芳香族基-O-CO- L7:-CO-2 valence aromatic group-O-CO-

L8:-2價的芳香族基-O-CO- L8:-2 valence aromatic group-O-CO-

L9:-CO-O-2價的脂肪族基-CO-O-2價的脂肪族基-O-CO- L9:-CO-O-2 valency aliphatic-CO-O-2 valency aliphatic-O-CO-

L10:-CO-O-2價的脂肪族基-O-CO-2價的脂肪族基-O-CO- L10: -CO-O-2 valence of aliphatic group-O-CO-2 valency aliphatic group-O-CO-

L11:-CO-O-2價的芳香族基-CO-O-2價的脂肪族基-O-CO- L11:-CO-O-2 valence aromatic group-CO-O-2 valency aliphatic group-O-CO-

L12:-CO-O-2價的芳香族基-O-CO-2價的脂肪族基-O-CO- L12:-CO-O-2 valence aromatic group-O-CO-2 valency aliphatic group-O-CO-

L13:-CO-O-2價的脂肪族基-CO-O-2價的芳香族基-O-CO- L13:-CO-O-2 valence of aliphatic group-CO-O-2 valence aromatic group-O-CO-

L14:-CO-O-2價的脂肪族基-O-CO-2價的芳香族基-O-CO- L14:-CO-O-2 valence of aliphatic group-O-CO-2 valence aromatic group-O-CO-

L15:-CO-O-2價的芳香族基-CO-O-2價的芳香族基-O-CO- L15:-CO-O-2 valence aromatic group-CO-O-2 valence aromatic group-O-CO-

L16:-CO-O-2價的芳香族基-O-CO-2價的芳香族基-O-CO- L16:-CO-O-2 valence aromatic group-O-CO-2 valence aromatic group-O-CO-

L17:-CO-O-2價的芳香族基-O-CO-NH-2價的脂肪族基-O-CO- L17:-CO-O-2 valence aromatic group-O-CO-NH-2 valency aliphatic group-O-CO-

L18:-CO-O-2價的脂肪族基-O-CO-NH-2價的脂肪族基-O-CO- L18:-CO-O-2 valence of aliphatic group-O-CO-NH-2 valency aliphatic group-O-CO-

L19:-2價的芳香族基-2價的脂肪族基 L19: a 2-valent aromatic 2-valent aliphatic group

L20:-2價的芳香族基-2價的脂肪族基-O-2價的脂肪族基- L20: a 2-valent aromatic 2-valent aliphatic group-O-2 valent aliphatic group -

L21:-2價的芳香族基-2價的脂肪族基-O-2價的脂肪族基-O- L21: a 2-valent aromatic 2-valent aliphatic group-O-2 valent aliphatic group-O-

L22:-CO-O-2價的脂肪族基- L22: -CO-O-2 valency aliphatic group -

L23:-CO-O-2價的脂肪族基-O- L23:-CO-O-2 valency aliphatic group-O-

此處,所謂2價的脂肪族基,就是意指伸烷基、取代伸烷基、伸烯基、取代伸烯基、伸炔基、取代伸炔基或聚伸烷基氧基。其中,較佳為伸烷基、取代伸烷基、伸烯基及取代伸烯基,更佳為伸烷基及取代伸烷基。 Here, the divalent aliphatic group means an alkyl group, a substituted alkyl group, an alkenyl group, a substituted alkenyl group, an alkynyl group, a substituted alkynyl group or a polyalkylene group. Among them, an alkyl group, a substituted alkyl group, an alkenyl group and a substituted alkenyl group are preferred, and an alkyl group and a substituted alkyl group are more preferred.

2價的脂肪族基係鏈狀構造比環狀構造還佳,而且直鏈狀構造係比具有分支的鏈狀構造還佳。2價的脂肪族基 之碳原子數較佳為1~20,更佳為1~15,尤佳為1~12,尤較佳為1~10,尤更佳為1~8,特佳為1~4。 The divalent aliphatic group chain structure is better than the ring structure, and the linear structure is better than the branched chain structure. Divalent aliphatic group The number of carbon atoms is preferably from 1 to 20, more preferably from 1 to 15, particularly preferably from 1 to 12, particularly preferably from 1 to 10, more preferably from 1 to 8, and particularly preferably from 1 to 4.

作為2價的脂肪族基之取代基之例,可舉出鹵素原子(F、Cl、Br、I)、羥基、羧基、胺基、氰基、芳基、烷氧基、芳氧基、醯基、烷氧羰基、芳氧羰基、醯氧基、單烷基胺基、二烷基胺基、芳基胺基及二芳基胺基等。 Examples of the substituent of the divalent aliphatic group include a halogen atom (F, Cl, Br, I), a hydroxyl group, a carboxyl group, an amine group, a cyano group, an aryl group, an alkoxy group, an aryloxy group, and an anthracene group. Alkyl, alkoxycarbonyl, aryloxycarbonyl, decyloxy, monoalkylamino, dialkylamino, arylamino and diarylamine.

作為2價的芳香族基之例,可舉出伸苯基、取代伸苯基、伸萘基及取代伸萘基,較佳為伸苯基。作為2價的芳香族基的取代基之例,除了上述2價的脂肪族基之取代基之例,還可舉出烷基。 Examples of the divalent aromatic group include a phenylene group, a substituted phenyl group, an anthranyl group and a substituted anthranyl group, and a phenyl group is preferred. Examples of the substituent of the divalent aromatic group include an alkyl group in addition to the substituent of the above divalent aliphatic group.

具有氟原子的重複單元之含量,相對於具有氟原子的自由基聚合性寡聚物之全部重複單元,較佳為2莫耳%~98莫耳%,更佳為10莫耳%~90莫耳%。 The content of the repeating unit having a fluorine atom is preferably from 2 mol% to 98 mol%, more preferably from 10 mol% to 90 mol%, based on all the repeating units of the radical polymerizable oligomer having a fluorine atom. ear%.

作為具有自由基聚合性官能基的重複單元,較佳為下述式(8)所示的重複單元。 The repeating unit having a radical polymerizable functional group is preferably a repeating unit represented by the following formula (8).

(通式(8)中,R801~R803各自獨立地表示氫原子、烷基或鹵素原子;Y8表示單鍵或由-CO-、-O-、-NH-、2價的脂肪族基、2價的芳香族基及彼等之組合所組成之群組中選出的2價連結基;T表示具有自由基聚合性官能基的構造)。 (In the formula (8), R 801 to R 803 each independently represent a hydrogen atom, an alkyl group or a halogen atom; Y 8 represents a single bond or a -CO-, -O-, -NH-, divalent aliphatic group a divalent linking group selected from the group consisting of a divalent aromatic group and a combination thereof; T represents a structure having a radical polymerizable functional group).

作為R801~R803的烷基,較佳為碳數1~6的烷基。 The alkyl group of R 801 to R 803 is preferably an alkyl group having 1 to 6 carbon atoms.

T較佳表示通式(9)所示的自由基聚合性官能基。 T preferably represents a radical polymerizable functional group represented by the formula (9).

(通式(9)中,R901~R903各自獨立地表示氫原子、烷基或芳基;虛線表示對於Y8連結的基之鍵結)。 (In the formula (9), R 901 to R 903 each independently represent a hydrogen atom, an alkyl group or an aryl group; and a broken line indicates a bond to a group bonded to Y 8 ).

烷基之例較佳為碳數1~8的烷基,例如可舉出甲基、乙基、丙基、辛基、異丙基、第三丁基、異戊基、2-乙基己基、2-甲基己基、環戊基等。芳基之例較佳為碳數6~12的芳基,可舉出苯基、1-萘基、2-萘基等。作為R901~R903,尤佳為氫原子或甲基。 The alkyl group is preferably an alkyl group having 1 to 8 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group, an octyl group, an isopropyl group, a tert-butyl group, an isopentyl group, and a 2-ethylhexyl group. , 2-methylhexyl, cyclopentyl and the like. The aryl group is preferably an aryl group having 6 to 12 carbon atoms, and examples thereof include a phenyl group, a 1-naphthyl group, and a 2-naphthyl group. As R 901 to R 903 , a hydrogen atom or a methyl group is particularly preferable.

Y8表示單鍵或由-CO-、-O-、-NH-、2價的脂肪族基、2價的芳香族基及彼等之組合所組成之群組中選出的2價連結基。以下舉出組合所成的Y8之具體例。再者,下述例中左側係鍵結於主鏈,右側係鍵結於式(9)。 Y 8 represents a single bond or a divalent linking group selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and a combination thereof. Specific examples of the Y 8 formed by the combination will be described below. Further, in the following examples, the left side is bonded to the main chain, and the right side is bonded to the formula (9).

L1:-CO-NH-2價的脂肪族基-O-CO-NH-2價的脂肪族基-O-CO- L1: -CO-NH-2 valence aliphatic-O-CO-NH-2 valency aliphatic-O-CO-

L2:-CO-NH-2價的脂肪族基-O-CO- L2:-CO-NH-2 valency aliphatic group-O-CO-

L3:-CO-2價的脂肪族基-O-CO- L3:-CO-2 valency aliphatic group-O-CO-

L4:-CO-O-2價的脂肪族基-O-CO- L4:-CO-O-2 valency aliphatic group-O-CO-

L5:-2價的脂肪族基-O-CO- L5: -2 valence aliphatic group - O-CO-

L6:-CO-NH-2價的芳香族基-O-CO- L6:-CO-NH-2 valence aromatic group-O-CO-

L7:-CO-2價的芳香族基-O-CO- L7:-CO-2 valence aromatic group-O-CO-

L8:-2價的芳香族基-O-CO- L8:-2 valence aromatic group-O-CO-

L9:-CO-O-2價的脂肪族基-CO-O-2價的脂肪族基-O-CO- L9:-CO-O-2 valency aliphatic-CO-O-2 valency aliphatic-O-CO-

L10:-CO-O-2價的脂肪族基-O-CO-2價的脂肪族基-O-CO- L10: -CO-O-2 valence of aliphatic group-O-CO-2 valency aliphatic group-O-CO-

L11:-CO-O-2價的芳香族基-CO-O-2價的脂肪族基-O-CO- L11:-CO-O-2 valence aromatic group-CO-O-2 valency aliphatic group-O-CO-

L12:-CO-O-2價的芳香族基-O-CO-2價的脂肪族基-O-CO- L12:-CO-O-2 valence aromatic group-O-CO-2 valency aliphatic group-O-CO-

L13:-CO-O-2價的脂肪族基-CO-O-2價的芳香族基-O-CO- L13:-CO-O-2 valence of aliphatic group-CO-O-2 valence aromatic group-O-CO-

L14:-CO-O-2價的脂肪族基-O-CO-2價的芳香族基-O-CO- L14:-CO-O-2 valence of aliphatic group-O-CO-2 valence aromatic group-O-CO-

L15:-CO-O-2價的芳香族基-CO-O-2價的芳香族基-O-CO- L15:-CO-O-2 valence aromatic group-CO-O-2 valence aromatic group-O-CO-

L16:-CO-O-2價的芳香族基-O-CO-2價的芳香族基-O-CO- L16:-CO-O-2 valence aromatic group-O-CO-2 valence aromatic group-O-CO-

L17:-CO-O-2價的芳香族基-O-CO-NH-2價的脂肪族基-O-CO- L17:-CO-O-2 valence aromatic group-O-CO-NH-2 valency aliphatic group-O-CO-

L18:-CO-O-2價的脂肪族基-O-CO-NH-2價的脂肪族基-O-CO- L18:-CO-O-2 valence of aliphatic group-O-CO-NH-2 valency aliphatic group-O-CO-

此處,所謂2價的脂肪族基,就是意指伸烷基、取代伸烷基、伸烯基、取代伸烯基、伸炔基、取代伸炔基或聚伸烷基氧基。其中,較佳為伸烷基、取代伸烷基、伸烯基及取代伸烯基,更佳為伸烷基及取代伸烷基。 Here, the divalent aliphatic group means an alkyl group, a substituted alkyl group, an alkenyl group, a substituted alkenyl group, an alkynyl group, a substituted alkynyl group or a polyalkylene group. Among them, an alkyl group, a substituted alkyl group, an alkenyl group and a substituted alkenyl group are preferred, and an alkyl group and a substituted alkyl group are more preferred.

2價的脂肪族基係鏈狀構造比環狀構造還佳,而且直鏈狀構造係比具有分支的鏈狀構造還佳。2價的脂肪族基之碳原子數較佳為1~20,更佳為1~15,尤佳為1~12,尤較佳為1~10,尤更佳為1~8,特佳為1~4。 The divalent aliphatic group chain structure is better than the ring structure, and the linear structure is better than the branched chain structure. The number of carbon atoms of the divalent aliphatic group is preferably from 1 to 20, more preferably from 1 to 15, particularly preferably from 1 to 12, particularly preferably from 1 to 10, particularly preferably from 1 to 8, particularly preferably 1~4.

作為2價的脂肪族基之取代基之例,可舉出鹵素原子(F、Cl、Br、I)、羥基、羧基、胺基、氰基、芳基、烷氧基、芳氧基、醯基、烷氧羰基、芳氧羰基、醯氧基、單烷基胺基、二烷基胺基、芳基胺基及二芳基胺基等。 Examples of the substituent of the divalent aliphatic group include a halogen atom (F, Cl, Br, I), a hydroxyl group, a carboxyl group, an amine group, a cyano group, an aryl group, an alkoxy group, an aryloxy group, and an anthracene group. Alkyl, alkoxycarbonyl, aryloxycarbonyl, decyloxy, monoalkylamino, dialkylamino, arylamino and diarylamine.

作為2價的芳香族基之例,可舉出伸苯基、取代伸苯基、伸萘基及取代伸萘基,較佳為伸苯基。作為2價的芳香族基的取代基之例,除了上述2價的脂肪族基之取代基之例,還可舉出烷基。 Examples of the divalent aromatic group include a phenylene group, a substituted phenyl group, an anthranyl group and a substituted anthranyl group, and a phenyl group is preferred. Examples of the substituent of the divalent aromatic group include an alkyl group in addition to the substituent of the above divalent aliphatic group.

具有自由基聚合性官能基的重複單元之含量,相對於具有氟原子的自由基聚合性寡聚物之全部重複單元,較佳為2莫耳%~98莫耳%,更佳為10莫耳%~90莫耳%。 The content of the repeating unit having a radical polymerizable functional group is preferably from 2 mol% to 98 mol%, more preferably 10 mol%, based on the total repeating unit of the radical polymerizable oligomer having a fluorine atom. %~90% by mole.

具有氟原子的自由基聚合性寡聚物之由凝膠滲透層析(GPC)法所測定的聚苯乙烯換算之重量平均分子量,較佳為2000~20000,更佳為2000~15000,最佳為2000~10000。 The polystyrene-equivalent weight average molecular weight measured by a gel permeation chromatography (GPC) method of a radically polymerizable oligomer having a fluorine atom is preferably from 2,000 to 20,000, more preferably from 2,000 to 15,000, most preferably It is 2000~10000.

接著劑層前驅物含有具有氟原子的自由基聚合性單體及/或聚合性寡聚物時,具有氟原子的自由基聚合性單體及/或聚合性寡聚物之含量係沒有特別的限制,但相對於接著劑層前驅物的全部固體成分,較佳為0.01質量%以上20質量%以下。若小於0.01質量%,則有剝離 性變不充分之傾向。另一方面,若超過20質量%,則有接著性降低之傾向。 When the precursor layer precursor contains a radical polymerizable monomer having a fluorine atom and/or a polymerizable oligomer, the content of the radical polymerizable monomer having a fluorine atom and/or the polymerizable oligomer is not particularly limited. Although it is limited, it is preferably 0.01% by mass or more and 20% by mass or less based on the total solid content of the adhesive layer precursor. If it is less than 0.01% by mass, there is peeling The tendency for sexual variability to be inadequate. On the other hand, when it exceeds 20 mass%, the adhesiveness tends to fall.

具有氟原子的自由基聚合性單體及/或聚合性寡聚物係可為僅1種類,也可為2種類以上。於聚合性單體為2種類以上時,其合計較佳為上述範圍。 The radically polymerizable monomer and/or the polymerizable oligomer having a fluorine atom may be used alone or in combination of two or more types. When the number of the polymerizable monomers is two or more, the total amount is preferably in the above range.

[具有矽原子的自由基聚合性單體及/或聚合性寡聚物] [Free radical polymerizable monomer and/or polymerizable oligomer having a ruthenium atom]

本發明中之具有矽原的自由基聚合性單體及/或聚合性寡聚物,較佳為矽氧單體或矽氧寡聚物,例如可舉出聚二甲基矽氧烷鍵結的至少一末端成為(甲基)丙烯醯基及苯乙烯基等之乙烯性不飽和基的化合物,較佳為具有(甲基)丙烯醯基的化合物。 The radically polymerizable monomer and/or polymerizable oligomer having a ruthenium in the present invention is preferably a oxime monomer or a ruthenium oxy oligomer, and examples thereof include polydimethyl siloxane coupling. The at least one terminal is a compound having an ethylenically unsaturated group such as a (meth)acryl fluorenyl group or a styryl group, and preferably a compound having a (meth) acrylonitrile group.

具有矽原子的自由基聚合性寡聚物之由凝膠滲透層析法所測定的聚苯乙烯換算之數量平均分子量較佳為1,000~10,000。具有矽原子的自由基聚合性寡聚物之由凝膠滲透層析法所測定的聚苯乙烯換算之數量平均分子量小於1,000或10,000以上時,難以展現矽原子所致的剝離性等之性質。 The number average molecular weight in terms of polystyrene measured by gel permeation chromatography of the radically polymerizable oligomer having a ruthenium atom is preferably from 1,000 to 10,000. When the number average molecular weight in terms of polystyrene measured by gel permeation chromatography measured by gel permeation chromatography is less than 1,000 or 10,000, the radically polymerizable oligomer having a ruthenium atom is difficult to exhibit properties such as peeling property by a ruthenium atom.

作為本發明中之具有矽原子的自由基聚合性單體,較佳為使用通式(11)或(12)所示的化合物。 As the radical polymerizable monomer having a ruthenium atom in the present invention, a compound represented by the formula (11) or (12) is preferably used.

(通式(11)及(12)中,R11~R19各自獨立地表示氫原子、烷 基、烷氧基、烷氧羰基或芳基;Z11、Z12及Z13各自獨立地表示自由基聚合性基;L11、L12及L13各自獨立地表示單鍵或二價連結基;n及m各自獨立地表示0以上之整數)。 (In the general formulae (11) and (12), R 11 to R 19 each independently represent a hydrogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group or an aryl group; and Z 11 , Z 12 and Z 13 each independently represent The radical polymerizable group; L 11 , L 12 and L 13 each independently represent a single bond or a divalent linking group; and n and m each independently represent an integer of 0 or more).

通式(11)及(12)中,R11~R19各自獨立地表示氫原子、烷基、烷氧基、烷氧羰基或芳基。 In the general formulae (11) and (12), R 11 to R 19 each independently represent a hydrogen atom, an alkyl group, an alkoxy group, an alkoxycarbonyl group or an aryl group.

烷基係可為直鏈狀或支鏈狀,較佳為碳數1~5的烷基,具體地可舉出甲基、乙基、正丙基、異丙基等。烷氧基係意指-OR20,R20表示烷基(較佳為碳數1~5的烷基),具體地可舉出甲氧基、乙氧基、丙氧基、異丙氧基、丁氧基等。烷氧羰基係意指-C(=O)R21,R21表示烷氧基(較佳為碳數1~5的烷氧基),具體地可舉出甲氧羰基、乙氧羰基、丙氧羰基等。芳基可舉出苯基、甲苯基、萘基等,彼等亦可具有取代基,可舉出苯基甲基(苄基)、苯基乙基、苯基丙基、苯基丁基、萘基甲基等。 The alkyl group may be linear or branched, and is preferably an alkyl group having 1 to 5 carbon atoms, and specific examples thereof include a methyl group, an ethyl group, a n-propyl group, and an isopropyl group. The alkoxy group means -OR 20 , and R 20 represents an alkyl group (preferably an alkyl group having 1 to 5 carbon atoms), and specific examples thereof include a methoxy group, an ethoxy group, a propoxy group, and an isopropoxy group. , butoxy and the like. The alkoxycarbonyl group means -C(=O)R 21 , and R 21 represents an alkoxy group (preferably an alkoxy group having 1 to 5 carbon atoms), and specific examples thereof include a methoxycarbonyl group, an ethoxycarbonyl group, and a C. Oxycarbonyl or the like. Examples of the aryl group include a phenyl group, a tolyl group, and a naphthyl group, and the like may have a substituent, and examples thereof include a phenylmethyl group (benzyl group), a phenylethyl group, a phenylpropyl group, and a phenylbutyl group. Naphthylmethyl and the like.

L11、L12及L13各自獨立地表示單鍵或二價連結基。二價連結基表示由-CO-、-O-、-NH-、二價的脂肪族基、二價的芳香族基及彼等之組合所組成之群組中選出的二價連結基。 L 11 , L 12 and L 13 each independently represent a single bond or a divalent linking group. The divalent linking group represents a divalent linking group selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and a combination thereof.

n及m各自獨立地表示0以上之整數,較佳為0~100之整數,更佳為0~50之整數。 n and m each independently represent an integer of 0 or more, preferably an integer of 0 to 100, more preferably an integer of 0 to 50.

Z11、Z12及Z13各自獨立地表示自由基聚合性基,特佳為下述通式(i)~(iii)中任一者表示之官能基。 Z 11 , Z 12 and Z 13 each independently represent a radical polymerizable group, and particularly preferably a functional group represented by any one of the following general formulae (i) to (iii).

(通式(i)中,R101~R103各自獨立地表示氫原子或1價有機基;X101表示氧原子、硫原子或-N(R104)-,R104表示氫原子或1價有機基)。 (In the formula (i), R 101 to R 103 each independently represent a hydrogen atom or a monovalent organic group; X 101 represents an oxygen atom, a sulfur atom or -N(R 104 )-, and R 104 represents a hydrogen atom or a monovalent group. Organic base).

通式(i)中,R101~R103各自獨立地表示氫原子或1價有機基。R101較佳可舉出氫原子或可具有取代基的烷基等,其中較佳為氫原子及甲基,因自由基反應性高。又,R102及R103各自獨立地較佳為氫原子、鹵素原子、胺基、羧基、烷氧羰基、磺基、硝基、氰基、可具有取代基的烷基、可具有取代基的芳基、可具有取代基的烷氧基、可具有取代基的芳氧基、可具有取代基的烷基胺基、可具有取代基的芳基胺基、可具有取代基的烷基磺醯基、或可具有取代基的芳基磺醯基,其中較佳為氫原子、羧基、烷氧羰基、可具有取代基的烷基、可具有取代基的芳基,因自由基反應性高。 In the formula (i), R 101 to R 103 each independently represent a hydrogen atom or a monovalent organic group. R 101 is preferably a hydrogen atom or an alkyl group which may have a substituent. Among them, a hydrogen atom and a methyl group are preferable, and the radical reactivity is high. Further, R 102 and R 103 are each independently preferably a hydrogen atom, a halogen atom, an amine group, a carboxyl group, an alkoxycarbonyl group, a sulfo group, a nitro group, a cyano group, an alkyl group which may have a substituent, and a substituent group. An aryl group, an alkoxy group which may have a substituent, an aryloxy group which may have a substituent, an alkylamine group which may have a substituent, an arylamine group which may have a substituent, an alkylsulfonium group which may have a substituent The arylsulfonyl group which may have a substituent, and preferably a hydrogen atom, a carboxyl group, an alkoxycarbonyl group, an alkyl group which may have a substituent, an aryl group which may have a substituent, is highly reactive with a radical.

X101表示氧原子、硫原子或-N(R104)-,R104表示氫原子或1價有機基。作為1價有機基,可舉出可具有取代基的烷基等。R104較佳為氫原子、甲基、乙基或異丙基,因自由基反應性高。 X 101 represents an oxygen atom, a sulfur atom or -N(R 104 )-, and R 104 represents a hydrogen atom or a monovalent organic group. The monovalent organic group may, for example, be an alkyl group which may have a substituent. R 104 is preferably a hydrogen atom, a methyl group, an ethyl group or an isopropyl group, and has high radical reactivity.

作為可導入的取代基,可舉出烷基、烯基、炔基、芳基、烷氧基、芳氧基、鹵素原子、胺基、烷基胺基、芳基胺基、羧基、烷氧羰基、磺基、硝基、氰基、醯胺基、烷基磺醯基、芳基磺醯基等。 The substituent which may be introduced may, for example, be an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an alkoxy group, an aryloxy group, a halogen atom, an amine group, an alkylamino group, an arylamine group, a carboxyl group or an alkoxy group. A carbonyl group, a sulfo group, a nitro group, a cyano group, a decylamino group, an alkylsulfonyl group, an arylsulfonyl group or the like.

(通式(ii)中,R201~R205各自獨立地表示氫原子或1價有機基;Y201表示氧原子、硫原子或-N(R206)-;R206表示氫原子或1價有機基)。 (In the formula (ii), R 201 to R 205 each independently represent a hydrogen atom or a monovalent organic group; Y 201 represents an oxygen atom, a sulfur atom or -N(R 206 )-; and R 206 represents a hydrogen atom or a monovalent group. Organic base).

通式(ii)中,R201~R205各自獨立地表示氫原子或1價有機基;R201~R205各自獨立地較佳為氫原子、鹵素原子、胺基、羧基、烷氧羰基、磺基、硝基、氰基、可具有取代基的烷基、可具有取代基的芳基、可具有取代基的烷氧基、可具有取代基的芳氧基、可具有取代基的烷基胺基、可具有取代基的芳基胺基、可具有取代基的烷基磺醯基、或可具有取代基的芳基磺醯基,更佳為氫原子、羧基、烷氧羰基、可具有取代基的烷基、或可具有取代基的芳基。 In the formula (ii), R 201 to R 205 each independently represent a hydrogen atom or a monovalent organic group; and R 201 to R 205 are each independently preferably a hydrogen atom, a halogen atom, an amine group, a carboxyl group, an alkoxycarbonyl group, Sulfo group, nitro group, cyano group, alkyl group which may have a substituent, aryl group which may have a substituent, alkoxy group which may have a substituent, aryloxy group which may have a substituent, alkyl group which may have a substituent An amine group, an arylamino group which may have a substituent, an alkylsulfonyl group which may have a substituent, or an arylsulfonyl group which may have a substituent, more preferably a hydrogen atom, a carboxyl group, an alkoxycarbonyl group, or An alkyl group of a substituent or an aryl group which may have a substituent.

作為可導入的取代基,可舉出與通式(i)所記載之取代基同樣者。 The substituent which can be introduced is the same as the substituent of the formula (i).

Y201表示氧原子、硫原子或-N(R206)-。R206係與通式(i)的R104同義,較佳例亦同樣。 Y 201 represents an oxygen atom, a sulfur atom or -N(R 206 )-. R 206 is synonymous with R 104 of the formula (i), and preferred examples are also the same.

(通式(iii)中,R301~R303各自獨立地表示氫原子或1價有 機基;Z301表示氧原子、硫原子、-N(R304)-或可具有取代基的伸苯基;R304係與通式(i)的R104同義)。 (In the formula (iii), R 301 to R 303 each independently represent a hydrogen atom or a monovalent organic group; and Z 301 represents an oxygen atom, a sulfur atom, -N(R 304 )- or a phenyl group which may have a substituent ; R 304 is synonymous with R 104 of the formula (i)).

通式(iii)中,R301~R303各自獨立地表示氫原子或1價有機基。R301較佳為氫原子或可具有取代基的烷基,其中更佳為氫原子或甲基,因自由基反應性高。R302及R303各自獨立地較佳為氫原子、鹵素原子、胺基、羧基、烷氧羰基、磺基、硝基、氰基、可具有取代基的烷基、可具有取代基的芳基、可具有取代基的烷氧基、可具有取代基的芳氧基、可具有取代基的烷基胺基、可具有取代基的芳基胺基、可具有取代基的烷基磺醯基、或可具有取代基的芳基磺醯基,更佳為氫原子、羧基、烷氧羰基、可具有取代基的烷基、或可具有取代基的芳基,因自由基反應性高。 In the formula (iii), R 301 to R 303 each independently represent a hydrogen atom or a monovalent organic group. R 301 is preferably a hydrogen atom or an optionally substituted alkyl group, wherein more preferably a hydrogen atom or a methyl group because of high radical reactivity. R 302 and R 303 are each independently preferably a hydrogen atom, a halogen atom, an amine group, a carboxyl group, an alkoxycarbonyl group, a sulfo group, a nitro group, a cyano group, an alkyl group which may have a substituent, and an aryl group which may have a substituent. An alkoxy group which may have a substituent, an aryloxy group which may have a substituent, an alkylamine group which may have a substituent, an arylamine group which may have a substituent, an alkylsulfonyl group which may have a substituent, The arylsulfonyl group which may have a substituent, more preferably a hydrogen atom, a carboxyl group, an alkoxycarbonyl group, an alkyl group which may have a substituent, or an aryl group which may have a substituent, has high radical reactivity.

作為可導入的取代基,可舉出與通式(i)所記載之取代基同樣者。Z301表示氧原子、硫原子、-N(R304)-或可具有取代基的伸苯基。R304係與通式(i)的R104同義,作為1價有機基,可舉出可具有取代基的烷基等,其中較佳為甲基、乙基及異丙基,因自由基反應性高。 The substituent which can be introduced is the same as the substituent of the formula (i). Z 301 represents an oxygen atom, a sulfur atom, -N(R 304 )- or a stretched phenyl group which may have a substituent. R304 is synonymous with R 104 of the formula (i), and examples of the monovalent organic group include an alkyl group which may have a substituent, and the like, and among them, a methyl group, an ethyl group and an isopropyl group are preferred, and a radical reaction is possible. High sex.

接著劑層前驅物含有具有矽原子的自由基聚合性單體及/或聚合性寡聚物時,具有矽原子的自由基聚合性單體及/或聚合性寡聚物之含量,相對於接著劑前驅物之全部固體成分,較佳為0.01質量%以上20質量%以下。若少於0.01質量%,則有剝離性降低之傾向。另一方面,若超過20質量%,則有接著性降低之傾向。 When the precursor layer precursor contains a radical polymerizable monomer having a germanium atom and/or a polymerizable oligomer, the content of the radical polymerizable monomer and/or the polymerizable oligomer having a germanium atom is relative to the content of the polymerizable oligomer. The total solid content of the agent precursor is preferably 0.01% by mass or more and 20% by mass or less. When it is less than 0.01% by mass, the peeling property tends to be lowered. On the other hand, when it exceeds 20 mass%, the adhesiveness tends to fall.

具有矽原子的自由基聚合性單體或寡聚物係可為僅 1種類,也可為2種類以上。於具有矽原子的自由基聚合性單體或寡聚物為2種類以上時,其合計較佳為上述範圍。 The radically polymerizable monomer or oligomer having a ruthenium atom may be only One type may be two or more types. When the number of the radical polymerizable monomers or oligomers having a ruthenium atom is 2 or more, the total amount is preferably in the above range.

作為具有氟原子或矽原子的自由基聚合性單體及/或聚合性寡聚物,例如可舉出DIC股份有限公司製之RS-75、RS-72-K、RS-76-E、DAIKIN工業股份有限公司製之Optool DAC-HP、信越化學工業股份有限公司製之X-22-164、X-22-164AS、X-22-164A、X-22-164B、X-22-164、X-22-164C、X-22-164E、DAICEL CYTEC股份有限公司製之EBECRYL 350、EBECRYL 1360、DEGUSSA公司製之TEGORad2700等。 Examples of the radical polymerizable monomer and/or polymerizable oligomer having a fluorine atom or a ruthenium atom include RS-75, RS-72-K, RS-76-E, and DAIKIN manufactured by DIC Corporation. Industrial Co., Ltd. Optool DAC-HP, Shin-Etsu Chemical Co., Ltd. X-22-164, X-22-164AS, X-22-164A, X-22-164B, X-22-164, X -22-164C, X-22-164E, EBECRYL 350 manufactured by DAICEL CYTEC Co., Ltd., EBECRYL 1360, TEGORad 2700 manufactured by DEGUSSA, etc.

<<(b-2)光自由基引發劑、(b-3)熱自由基引發劑>> <<(b-2) photoradical initiator, (b-3) thermal radical initiator>>

本發明之接著劑層前驅物較佳為含有自由基聚合引發劑,即(b-2)因活性光線或放射線之照射(光照射)而產生自由基之化合物(光自由基引發劑(光自由基聚合引發劑))或(b-3)因熱而產生自由基之化合物(熱自由基引發劑(熱自由基聚合引發劑))。於自由基聚合引發劑之存在下,藉由對自由基聚合性單體或寡聚物照射光或加熱,發生因自由基所造成的硬化反應,可調整接著劑層前驅物之聚合率,而可調節接著性。 The adhesive layer precursor of the present invention preferably contains a radical polymerization initiator, that is, (b-2) a compound which generates a radical due to irradiation of active light or radiation (light irradiation) (photo-free radical initiator (light free) The base polymerization initiator)) or (b-3) a compound which generates a radical due to heat (a thermal radical initiator (thermal radical polymerization initiator)). In the presence of a radical polymerization initiator, by irradiating light or heating the radical polymerizable monomer or oligomer, a hardening reaction due to a radical occurs, and the polymerization rate of the precursor of the adhesive layer can be adjusted, and Adjustable adhesion.

[光自由基引發劑] [Photoradical initiator]

作為光自由基引發劑,例如可使用以下所述之作為聚合引發劑所已知者。 As the photo radical initiator, for example, those known as polymerization initiators described below can be used.

作為前述光自由基引發劑,只要是具有引發作為前 述聚合性單體的具有聚合性基之反應性化合物中之聚合反應(交聯反應)的能力,則沒有特別的限制,可自眾所周知的聚合引發劑之中適宜選擇。例如,較佳為對於紫外線區域至可見的光線具有感光性者。又,亦可為與光激發的增感劑發生任何的作用,而生成活性自由基之活性劑。 As the photo-radical initiator, as long as it has an initiation The ability of the polymerization reaction (crosslinking reaction) in the reactive compound having a polymerizable group of the polymerizable monomer is not particularly limited, and may be appropriately selected from known polymerization initiators. For example, it is preferred that the ultraviolet region is photosensitive to visible light. Further, it may be any active agent acting on the photoexcited sensitizer to form an active radical active agent.

又,前述聚合引發劑較佳為含有至少1種的在約300nm~800nm(較佳為330nm~500nm)之範圍內具有至少約50的分子吸光係數之化合物。 Further, the polymerization initiator preferably contains at least one compound having a molecular absorption coefficient of at least about 50 in the range of about 300 nm to 800 nm, preferably 330 nm to 500 nm.

作為前述光自由基引發劑,可無限制地使用眾所周知的化合物,例如可舉出鹵化烴衍生物(例如具有三骨架者、具有二唑骨架者、具有三鹵甲基者等)、醯基膦氧化物等之醯基膦化合物、六芳基雙咪唑、肟衍生物等之肟化合物、有機過氧化物、硫化合物、酮化合物、芳香族鎓鹽、酮肟醚、胺基苯乙酮化合物、羥基苯乙酮、偶氮系化合物、疊氮化合物、二茂金屬化合物、有機硼化合物、鐵芳烴錯合物等。 As the photo-radical initiator, a well-known compound can be used without limitation, and for example, a halogenated hydrocarbon derivative (for example, having three Skeleton a sulfonium compound such as a bisazole skeleton, a trihalomethyl group or the like, a mercaptophosphine oxide, a fluorenyl compound such as a hexaarylbisimidazole or an anthracene derivative, an organic peroxide, a sulfur compound, or a ketone compound An aromatic sulfonium salt, a ketoxime ether, an aminoacetophenone compound, a hydroxyacetophenone, an azo compound, an azide compound, a metallocene compound, an organoboron compound, an iron arene complex, and the like.

作為前述具有三骨架的鹵化烴化合物,例如可舉出若林等人著的Bull.Chem.Soc.Japan,42,2924(1969)記載之化合物、英國專利1388492號說明書記載之化合物、日本特開昭53-133428號公報記載之化合物、德國專利3337024號說明書記載之化合物、F.C.Schaefer等之J.Org.Chem.;29,1527(1964)記載之化合物、日本特開昭62-58241號公報記載之化合物、日本特開平5-281728號公報記載之化合物、日本特開平5-34920 號公報記載化合物、美國專利第4212976號說明書中記載之化合物等。 As the aforementioned has three Examples of the halogenated hydrocarbon compound of the skeleton include a compound described in Bull. Chem. Soc. Japan, 42, 2924 (1969), a compound described in the specification of British Patent No. 1,388,492, and Japanese Patent Laid-Open No. 53-133428. The compound described in the publication, the compound described in the specification of the German Patent No. 3337024, the compound described in J. Org. Chem.; 29, 1527 (1964) of FC Schaefer et al., the compound described in JP-A-62-58241, and the Japanese Patent Laid-Open The compound described in the publication No. 5-281728, the compound described in Japanese Patent Publication No. Hei 5-34920, and the compound described in the specification of U.S. Patent No. 4,212,976.

作為前述美國專利第4212976號說明書中記載之化合物,例如可舉出具有二唑骨架的化合物(例如2-三氯甲基-5-苯基-1,3,4-二唑、2-三氯甲基-5-(4-氯苯基)-1,3,4-二唑、2-三氯甲基-5-(1-萘基)-1,3,4-二唑、2-三氯甲基-5-(2-萘基)-1,3,4-二唑、2-三溴甲基-5-苯基-1,3,4-二唑、2-三溴甲基-5-(2-萘基)-1,3,4-二唑;2-三氯甲基-5-苯乙烯基-1,3,4-二唑、2-三氯甲基-5-(4-氯苯乙烯基)-1,3,4-二唑、2-三氯甲基-5-(4-甲氧基苯乙烯基)-1,3,4-二唑、2-三氯甲基-5-(1-萘基)-1,3,4-二唑、2-三氯甲基-5-(4-正丁氧基苯乙烯基)-1,3,4-二唑、2-三溴甲基-5-苯乙烯基-1,3,4-二唑等)等。 The compound described in the specification of the aforementioned U.S. Patent No. 4,212,976 includes, for example, a compound of the diazole skeleton (for example, 2-trichloromethyl-5-phenyl-1,3,4- Diazole, 2-trichloromethyl-5-(4-chlorophenyl)-1,3,4- Diazole, 2-trichloromethyl-5-(1-naphthyl)-1,3,4- Diazole, 2-trichloromethyl-5-(2-naphthyl)-1,3,4- Diazole, 2-tribromomethyl-5-phenyl-1,3,4- Diazole, 2-tribromomethyl-5-(2-naphthyl)-1,3,4- Diazole; 2-trichloromethyl-5-styryl-1,3,4- Diazole, 2-trichloromethyl-5-(4-chlorostyryl)-1,3,4- Diazole, 2-trichloromethyl-5-(4-methoxystyryl)-1,3,4- Diazole, 2-trichloromethyl-5-(1-naphthyl)-1,3,4- Diazole, 2-trichloromethyl-5-(4-n-butoxystyryl)-1,3,4- Diazole, 2-tribromomethyl-5-styryl-1,3,4- Diazole, etc.).

又,作為上述以外之光自由基引發劑,可舉出吖啶衍生物(例如9-苯基吖啶、1,7-雙(9,9’-吖啶基)庚烷等)、N-苯基甘胺酸等、多鹵素化合物(例如四溴化碳、苯基三溴甲基碸、苯基三氯甲基酮等)、香豆素類(例如3-(2-苯并呋喃醯基)-7-二乙基胺基香豆素、3-(2-苯并呋喃甲醯基)-7-(1-吡咯啶基)香豆素、3-苯甲醯基-7-二乙基胺基香豆素、3-(2-甲氧基苯甲醯基)-7-二乙基胺基香豆素、3-(4-二甲基胺基苯甲醯基)-7-二乙基胺基香豆素、3,3’-羰基雙(5,7-二正丙氧基香豆素)、3,3’-羰基雙(7-二乙基胺基香豆素)、3-苯甲醯基-7-甲氧基香豆素、3-(2-呋喃甲醯基)-7-二乙基胺基香豆素、3-(4-二乙基胺基桂 皮醯基)-7-二乙基胺基香豆素、7-甲氧基-3-(3-吡啶基羰基)香豆素、3-苯甲醯基-5,7-二丙氧基香豆素、7-苯并三唑-2-基香豆素,以及日本特開平5-19475號公報、日本特開平7-271028號公報、日本特開2002-363206號公報、日本特開2002-363207號公報、日本特開2002-363208號公報、日本特開2002-363209號公報等中記載之香豆素化合物等)、醯基膦氧化物類(例如雙(2,4,6-三甲基苯甲醯基)-苯基膦氧化物、雙(2,6-二甲氧基苯甲醯基)-2,4,4-三甲基-戊基苯基膦氧化物,Lucirin TPO等)、二茂金屬類(例如雙(η5-2,4-環戊二烯-1-基)-雙(2,6-二氟-3-(1H-吡咯-1-基)-苯基)鈦、η5-環戊二烯基-η6-異丙苯基-鐵(1+)-六氟磷酸鹽(1-)等)、日本特開昭53-133428號公報、日本特公昭57-1819號公報、同57-6096號公報、及美國專利第3615455號說明書中記載之化合物等。 Further, examples of the photoradical initiator other than the above include an acridine derivative (for example, 9-phenyl acridine, 1,7-bis(9,9'-acridinyl)heptane, etc.), and N- Phenylglycine, etc., polyhalogen compounds (for example, carbon tetrabromide, phenyltribromomethylhydrazine, phenyltrichloromethyl ketone, etc.), coumarins (for example, 3-(2-benzofuranium) -7-diethylamino coumarin, 3-(2-benzofuranyl)-7-(1-pyrrolidinyl)coumarin, 3-benzylidene-7-di Ethylamino coumarin, 3-(2-methoxybenzimidyl)-7-diethylamino coumarin, 3-(4-dimethylaminobenzimidyl)-7 -diethylamino coumarin, 3,3'-carbonyl bis(5,7-di-n-propoxycoumarin), 3,3'-carbonyl bis(7-diethylamino coumarin , 3-benzylidene-7-methoxycoumarin, 3-(2-furanyl)-7-diethylaminocoumarin, 3-(4-diethylamino) Gui Benzyl)-7-diethylamino coumarin, 7-methoxy-3-(3-pyridylcarbonyl)coumarin, 3-benzylidene-5,7-dipropoxy Coumarin, 7-benzotriazol-2-ylcoumarin, and Japanese Laid-Open Patent Publication No. Hei 5-19475, Japanese Patent Laid-Open No. Hei 7-271028, Japanese Patent Laid-Open Publication No. 2002-363206, and JP-A-2002 a coumarin compound or the like described in JP-A-2002-363208, JP-A-2002-363209, and the like, and a mercaptophosphine oxide (for example, bis(2,4,6-three) Methyl benzhydryl)-phenylphosphine oxide, bis(2,6-dimethoxybenzylidene)-2,4,4-trimethyl-pentylphenylphosphine oxide, Lucirin TPO Equivalent), such as bis(η5-2,4-cyclopentadien-1-yl)-bis(2,6-difluoro-3-(1H-pyrrol-1-yl)-phenyl Titanium, η5-cyclopentadienyl-η6-isopropylphenyl-iron (1+)-hexafluorophosphate (1-), etc., JP-A-53-133428, and JP-A-57- A compound or the like described in the specification of No. 1819, Japanese Patent No. 57-6096, and Japanese Patent No. 3615455.

作為前述酮化合物,例如可舉出二苯基酮、2-甲基二苯基酮、3-甲基二苯基酮、4-甲基二苯基酮、4-甲氧基二苯基酮、2-氯二苯基酮、4-氯二苯基酮、4-溴二苯基酮、2-羧基二苯基酮、2-乙氧基羰基二苯基酮、二苯基酮四羧酸或其四甲酯、4,4’-雙(二烷基胺基)二苯基酮類(例如4,4’-雙(二甲基胺基)二苯基酮、4,4’-雙二環己基胺基)二苯基酮、4,4’-雙(二乙基胺基)二苯基酮、4,4’-雙(二羥基乙基胺基)二苯基酮、4-甲氧基-4’-二甲基胺基二苯基酮、4,4’-二甲氧基二苯基酮、4-二甲基胺基二苯基酮、4-二甲基胺基苯乙酮、苯偶醯、蒽醌、2-第三丁基蒽醌、2-甲基蒽醌、菲醌、呫噸酮、噻噸酮、2-氯-噻 噸酮、2,4-二乙基噻噸酮、茀酮、2-苄基-二甲基胺基-1-(4-啉基苯基)-1-丁酮、2-甲基-1-[4-(甲硫基)苯基]-2-啉基-1-丙酮、2-羥基-2-甲基-[4-(1-甲基乙烯基)苯基]丙醇寡聚物、苯偶姻、苯偶姻醚類(例如苯偶姻甲基醚、苯偶姻乙基醚、苯偶姻丙基醚、苯偶姻異丙基醚、苯偶姻苯基醚、苄基二甲基縮酮)、吖啶酮、氯吖啶酮、N-甲基吖啶酮、N-丁基吖啶酮、N-丁基-氯吖啶酮等。 Examples of the ketone compound include diphenyl ketone, 2-methyl diphenyl ketone, 3-methyl diphenyl ketone, 4-methyl diphenyl ketone, and 4-methoxy diphenyl ketone. , 2-chlorodiphenyl ketone, 4-chlorodiphenyl ketone, 4-bromodiphenyl ketone, 2-carboxydiphenyl ketone, 2-ethoxycarbonyldiphenyl ketone, diphenyl ketone tetracarboxylate Acid or its tetramethyl ester, 4,4'-bis(dialkylamino)diphenyl ketone (eg 4,4'-bis(dimethylamino)diphenyl ketone, 4,4'- Bis-dicyclohexylamino)diphenyl ketone, 4,4'-bis(diethylamino)diphenyl ketone, 4,4'-bis(dihydroxyethylamino)diphenyl ketone, 4 -Methoxy-4'-dimethylaminodiphenyl ketone, 4,4'-dimethoxydiphenyl ketone, 4-dimethylaminodiphenyl ketone, 4-dimethylamine Acetophenone, benzoin, anthracene, 2-tert-butylhydrazine, 2-methylindole, phenanthrenequinone, xanthone, thioxanthone, 2-chloro-thioxanthone, 2,4 -Diethylthioxanthone, anthrone, 2-benzyl-dimethylamino-1-(4- Phenylphenyl)-1-butanone, 2-methyl-1-[4-(methylthio)phenyl]-2- Lolinyl-1-propanone, 2-hydroxy-2-methyl-[4-(1-methylvinyl)phenyl]propanol oligomer, benzoin, benzoin ether (eg benzoin) Methyl ether, benzoin ethyl ether, benzoin propyl ether, benzoin isopropyl ether, benzoin phenyl ether, benzyl dimethyl ketal), acridone, chloroacridone N-methylacridone, N-butylacridone, N-butyl-chloroacridone, and the like.

市售品中,Kayacure DETX(日本化藥製)亦適用。 Among the commercial products, Kayacure DETX (made by Nippon Kayaku Co., Ltd.) is also applicable.

作為光自由基引發劑,亦可採用羥基苯乙酮化合物、胺基苯乙酮化合物及醯基膦化合物。更具體地,例如亦可使用日本特開平10-291969號公報中記載之胺基苯乙酮系引發劑、日本專利第4225898號公報中記載之醯基膦氧化物系引發劑。 As the photo radical initiator, a hydroxyacetophenone compound, an aminoacetophenone compound, and a mercaptophosphine compound can also be used. More specifically, for example, an aminoacetophenone-based initiator described in JP-A-10-291969 and a mercaptophosphine oxide-based initiator described in Japanese Patent No. 4,258,899 can be used.

作為羥基苯乙酮系引發劑,可使用IRGACURE-184、DAROCUR-1173、IRGACURE-500、IRGACURE-2959、IRGACURE-127(商品名:皆BASF公司製)。作為胺基苯乙酮系引發劑,可使用市售品之IRGACURE-907、IRGACURE-369及IRGACURE-379(商品名:皆BASF公司製)。作為胺基苯乙酮系引發劑,亦可使用吸收波長匹配365nm或405nm等之長波光源的日本特開2009-191179號公報中記載之化合物。又,作為醯基膦系引發劑,可使用市售品之IRGACURE-819或DAROCUR-TPO(商品名:皆BASF公司製)。 As the hydroxyacetophenone-based initiator, IRGACURE-184, DAROCUR-1173, IRGACURE-500, IRGACURE-2959, and IRGACURE-127 (trade name: manufactured by BASF Corporation) can be used. As the aminoacetophenone-based initiator, commercially available products IRGACURE-907, IRGACURE-369, and IRGACURE-379 (trade name: manufactured by BASF Corporation) can be used. As the aminoacetophenone-based initiator, a compound described in JP-A-2009-191179, which is a long-wavelength light source having a wavelength matching 365 nm or 405 nm, can be used. Further, as the mercaptophosphine-based initiator, commercially available IRGACURE-819 or DAROCUR-TPO (trade name: manufactured by BASF Corporation) can be used.

作為光自由基引發劑,更佳可舉出肟系化合物。作為肟系引發劑之具體例,可使用日本特開 2001-233842號記載之化合物、日本特開2000-80068號記載之化合物、日本特開2006-342166號記載之化合物。 As the photoradical initiator, a quinone compound is more preferable. As a specific example of the lanthanide initiator, Japanese special opening can be used. A compound described in JP-A-2000-80068, and a compound described in JP-A-2006-342166.

作為在本發明中適用作為光自由基引發劑的肟衍生物等之肟化合物,例如可舉出3-苯甲醯氧基亞胺基丁-2-酮、3-乙醯氧基亞胺基丁-2-酮、3-丙醯氧基亞胺基丁-2-酮、2-乙醯氧基亞胺基戊-3-酮、2-乙醯氧基亞胺基-1-苯基丙-1-酮、2-苯甲醯氧基亞胺基-1-苯基丙-1-酮、3-(4-甲苯磺醯氧基)亞胺基丁-2-酮、及2-乙氧基羰氧基亞胺基-1-苯基丙-1-酮等。 Examples of the hydrazine compound which is used as a photo-radical initiator in the present invention, such as an anthracene derivative, include 3-benzylideneoxyimidobutan-2-one and 3-ethyloxyiminoimide. Butan-2-one, 3-propenyloxyimidobutan-2-one, 2-ethyloxyiminopentan-3-one, 2-ethyloxyimino-1-phenyl Propan-1-one, 2-benzylideneoxyimido-1-phenylpropan-1-one, 3-(4-toluenesulfonyloxy)iminobutan-2-one, and 2- Ethoxycarbonyloxyimino-1-phenylpropan-1-one and the like.

作為肟酯化合物,可舉出J.C.S.Perkin II(1979年)pp.1653-1660)、J.C.S.Perkin II(1979年)pp.156-162、Journal of Photopolymer Science and Technology(1995年)pp.202-232、日本特開2000-66385號公報記載之化合物、日本特開2000-80068號公報、日本特表2004-534797號公報、日本特開2006-342166號公報之各公報中記載之化合物等。 Examples of the oxime ester compound include JCS Perkin II (1979) pp. 1653-1660), JCS Perkin II (1979) pp. 156-162, Journal of Photopolymer Science and Technology (1995) pp. 202-232. The compound described in each of the publications of JP-A-2000-66385, JP-A-2000-80068, JP-A-2004-534797, and JP-A-2006-342166.

市售品中,IRGACURE-OXE01(BASF公司製)、IRGACURE-OXE02(BASF公司製)亦適用。 Among the commercial products, IRGACURE-OXE01 (manufactured by BASF Corporation) and IRGACURE-OXE02 (manufactured by BASF Corporation) are also applicable.

又,作為上述記載以外之肟酯化合物,亦可使用在咔唑N位連結有肟之日本特表2009-519904號公報中記載之化合物、在二苯基酮部位導入有雜取代基之美國專利7626957號公報中記載之化合物、在色素部位導入有硝基之日本特開2010-15025號公報及美國專利公開2009-292039號公報記載之化合物、國際公開發明專利2009-131189號公報中記載之酮肟系化合物、在同一分子 內含有三骨架與肟骨架之美國專利7556910號公報中記載之化合物、在405nm具有極大吸收且對於g線光源具有良好感度之日本特開2009-221114號公報記載之化合物等。 In addition, as the oxime ester compound other than the above-mentioned description, a compound described in JP-A-2009-519904, in which a carbazole is bonded to the N-position of the carbazole, and a US-incorporated compound having a hetero substituent introduced at a diphenyl ketone site may be used. The compound described in Japanese Patent Laid-Open Publication No. 2010-125039, and the ketone described in Japanese Laid-Open Patent Publication No. 2009-292039, and the ketone described in Japanese Laid-Open Patent Publication No. 2009-131189 Lanthanide compound, containing three in the same molecule The compound described in Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei.

較佳更對於日本特開2007-231000號公報及日本特開2007-322744號公報中記載之環狀肟化合物亦可適用。於環狀肟化合物之中,尤其日本特開2010-32985號公報、日本特開2010-185072號公報中記載的在咔唑色素進行縮環之環狀肟化合物,從具有高的光吸收性且高感度化之觀點來看為佳。 The cyclic ruthenium compound described in JP-A-2007-2320 and JP-A-2007-322744 is also applicable. Among the cyclic ruthenium compounds, the cyclic ruthenium compound which is condensed in the carbazole dye described in Japanese Laid-Open Patent Publication No. 2010-185072, and the like, has high light absorbing properties. The viewpoint of high sensitivity is better.

又,在肟化合物的特定部位具有不飽和鍵之日本特開2009-242469號公報中記載之化合物,亦可由聚合不活性自由基來再生活性自由基而達成高感度化,可合適地使用。 In addition, the compound described in JP-A-2009-242469, which has an unsaturated bond at a specific site, can regenerate the active radical by polymerizing an inactive radical to achieve high sensitivity, and can be suitably used.

最佳可舉出日本特開2007-269779號公報中所示之具有特定取代基的肟化合物,或日本特開2009-191061號公報中所示之具有硫芳基的肟化合物。 The ruthenium compound having a specific substituent as shown in JP-A-2007-269779 or the sulfonium compound having a thioaryl group as shown in JP-A-2009-191061 is exemplified.

化合物之莫耳吸光係數係可使用眾所周知之方法,具體地例如較佳為藉由紫外可見分光光度計(Varian公司製Carry-5 spctrophotometer),使用醋酸乙酯溶劑,以0.01g/L之濃度進行測定。 The Mohr absorbance coefficient of the compound can be a well-known method, and specifically, for example, it is preferably carried out by using an ultraviolet-visible spectrophotometer (Carry-5 spctrophotometer manufactured by Varian Co., Ltd.) using an ethyl acetate solvent at a concentration of 0.01 g/L. Determination.

作為光自由基引發劑,從曝光感度之觀點來看,較佳為由三鹵甲基三化合物、苄基二甲基縮酮化合物、α-羥基酮化合物、α-胺基酮化合物、醯基膦化合物、氧化膦化合物、二茂金屬化合物、肟化合物、三烯 丙基咪唑二聚物、鎓化合物、苯并噻唑化合物、二苯基酮化合物、苯乙酮化合物及其衍生物、環戊二烯-苯-鐵錯合物及其鹽、鹵甲基二唑化合物、3-芳基取代香豆素化合物所組成之群組中選出的化合物。 As a photo radical initiator, from the viewpoint of exposure sensitivity, it is preferably trihalomethyltri a compound, a benzyldimethylketal compound, an α-hydroxyketone compound, an α-aminoketone compound, a mercaptophosphine compound, a phosphine oxide compound, a metallocene compound, an anthraquinone compound, a triallyl imidazole dimer, Antimony compound, benzothiazole compound, diphenyl ketone compound, acetophenone compound and its derivative, cyclopentadiene-benzene-iron complex and its salt, halomethyl A compound selected from the group consisting of an oxazolyl compound and a 3-aryl-substituted coumarin compound.

更佳為三鹵甲基三化合物、α-胺基酮化合物、醯基膦化合物、氧化膦化合物、肟化合物、三芳基咪唑二聚物、鎓化合物、二苯基酮化合物、苯乙酮化合物,最佳為由三鹵甲基三化合物、α-胺基酮化合物、肟化合物、三芳基咪唑二聚物、二苯基酮化合物所組成之群組中選出的至少一種化合物,最好使用肟化合物。 More preferred is trihalomethyl three a compound, an α-amino ketone compound, a mercaptophosphine compound, a phosphine oxide compound, an anthraquinone compound, a triaryl imidazole dimer, an anthracene compound, a diphenyl ketone compound, an acetophenone compound, preferably a trihalomethyl group three As the at least one compound selected from the group consisting of a compound, an α-amino ketone compound, an anthracene compound, a triaryl imidazole dimer, and a diphenyl ketone compound, an oxime compound is preferably used.

本發明之接著劑層前驅物具有光自由基引發劑時,光自由基引發劑之含量,相對於接著劑層前驅物的全部固體成分,較佳為0.1質量%以上50質量%以下,更佳為0.1質量%以上30質量%以下,尤佳為0.1質量%以上20質量%以下。 When the adhesive layer precursor of the present invention has a photo-radical initiator, the content of the photo-radical initiator is preferably 0.1% by mass or more and 50% by mass or less based on the total solid content of the adhesive layer precursor. It is 0.1% by mass or more and 30% by mass or less, and particularly preferably 0.1% by mass or more and 20% by mass or less.

光自由基引發劑係可為僅1種類,也可為2種類以上。於光自由基引發劑為2種類以上時,其合計較佳為上述範圍。 The photoradical initiator may be one type or two or more types. When the amount of the photo radical initiator is two or more, the total amount is preferably in the above range.

[熱自由基引發劑] [thermal free radical initiator]

作為熱自由基引發劑,可使用眾所周知的熱自由基產生劑。 As the thermal radical initiator, a well-known thermal radical generator can be used.

熱自由基引發劑係因熱的能量而產生自由基,使聚合性單體的聚合反應開始或促進之化合物。藉由添加熱自由基產生劑,於對於使用暫時性接著劑所形成的接著劑層前驅物照射熱後,進行被處理構件與接著性支撐體 之暫時接著之情況中,藉由因熱而具有交聯性基的反應性化合物中之交聯反應進行,如後所詳述地,可使接著劑層前驅物的接著性(即黏著性及膠黏性)預先降低。 A thermal radical initiator is a compound which generates a radical due to the energy of heat and starts or promotes a polymerization reaction of a polymerizable monomer. The member to be treated and the adhesive support are irradiated after the heat is applied to the adhesive layer precursor formed using the temporary adhesive by adding a thermal radical generator. In the case of the temporary continuation, the crosslinking reaction in the reactive compound having a crosslinkable group by heat, as described later in detail, can improve the adhesion (ie, adhesion) of the adhesive layer precursor. Adhesiveness) is lowered in advance.

另一方面,於進行被處理構件與接著性支撐體之暫時接著後,在對於接著性支撐體中的接著劑層前驅物照射熱後之情況中,因熱而具有交聯性基的反應性化合物中之交聯反應進行。結果,成為更強韌的接著劑層,可抑制在施予被處理構件的機械或化學處理時等所容易發生的接著劑層前驅物之內聚破壞。即可提高接著劑層前驅物中之接著性。 On the other hand, in the case where the heat of the adhesive layer precursor in the adhesive support is irradiated to the adhesive member after the temporary contact between the member to be treated and the adhesive support, the reactivity of the crosslinkable group due to heat is obtained. The crosslinking reaction in the compound proceeds. As a result, a stronger adhesive layer can suppress the cohesive failure of the adhesive layer precursor which is likely to occur during mechanical or chemical treatment of the member to be treated. The adhesion in the precursor of the adhesive layer can be improved.

作為較佳的熱自由基引發劑,可舉出上述因活性光線或放射線之照射而產生自由基之化合物,較佳可使用熱分解點為130℃~250℃,較宜150℃~220℃之範圍的化合物。 Preferred examples of the thermal radical initiator include the above-mentioned compounds which generate radicals by irradiation with active rays or radiation, and it is preferred to use a thermal decomposition point of 130 ° C to 250 ° C, preferably 150 ° C to 220 ° C. Range of compounds.

作為熱自由基引發劑,可舉出芳香族酮類、鎓鹽化合物、有機過氧化物、硫化合物、六芳基雙咪唑化合物、酮肟酯化合物、硼酸酯化合物、吖鎓(azinium)化合物、二茂金屬化合物、活性酯化合物、具有碳鹵素鍵結的化合物、偶氮系化合物等。其中,較佳為有機過氧化物或偶氮系化合物,特佳為有機過氧化物。 Examples of the thermal radical initiator include aromatic ketones, phosphonium salt compounds, organic peroxides, sulfur compounds, hexaarylbisimidazole compounds, ketoxime compounds, borate ester compounds, and oxime compounds. An azinium compound, a metallocene compound, an active ester compound, a compound having a carbon halogen bond, an azo compound, or the like. Among them, an organic peroxide or an azo compound is preferred, and an organic peroxide is particularly preferred.

具體地,可舉出日本特開2008-63554號公報之段落0074~0118中記載的化合物。 Specifically, a compound described in paragraphs 0074 to 0118 of JP-A-2008-63554 can be mentioned.

於市售品中,可合適地使用Perbutyl Z(日油(股)製)。 Among the commercially available products, Perbutyl Z (manufactured by Nippon Oil Co., Ltd.) can be suitably used.

本發明中的接著劑層前驅物含有(b-3)熱自由基聚合引發劑作為自由基聚合引發劑時(更佳為含有 (b-2)光自由基聚合引發劑與(b-3)熱自由基聚合引發劑時),尤其可進一步提高高溫時(例如100℃)的接著性。 When the adhesive layer precursor in the present invention contains (b-3) a thermal radical polymerization initiator as a radical polymerization initiator (more preferably contains (b-2) When the photoradical polymerization initiator and the (b-3) thermal radical polymerization initiator are used, in particular, the adhesion at a high temperature (for example, 100 ° C) can be further improved.

本發明之接著劑層前驅物較佳為含有(b-2)光自由基聚合引發劑。 The adhesive layer precursor of the present invention preferably contains (b-2) a photoradical polymerization initiator.

又,本發明中之接著劑層前驅物係可含有1種或2種以上的自由基聚合引發劑。 Further, the adhesive layer precursor in the present invention may contain one or more kinds of radical polymerization initiators.

接著劑層前驅物具有熱自由基引發劑時,熱自由基引發劑之含量,相對於接著劑層前驅物的全部固體成分,較佳為0.1質量%以上50質量%以下,更佳為0.1質量%以上30質量%以下,尤佳為0.1質量%以上20質量%以下。 When the agent layer precursor has a thermal radical initiator, the content of the thermal radical initiator is preferably 0.1% by mass or more and 50% by mass or less, more preferably 0.1% by mass based on the total solid content of the adhesive layer precursor. % or more is 30% by mass or less, and particularly preferably 0.1% by mass or more and 20% by mass or less.

熱自由基引發劑係可為僅1種類,也可為2種類以上。於熱自由基引發劑為2種類以上時,其合計較佳為上述範圍。 The thermal radical initiator may be one type or two or more types. When the number of the thermal radical initiators is 2 or more, the total amount is preferably in the above range.

<<(b-4)高分子化合物>> <<(b-4) Polymer Compound>>

本發明之接著劑層前驅物,為了調節塗布性,視需要亦可具有高分子化合物。再者,此處所言的塗布性,就是指塗布後的膜厚均勻性或塗布後的膜形成性。 The adhesive layer precursor of the present invention may have a polymer compound as needed in order to adjust coatability. In addition, the coating property as used herein means the film thickness uniformity after coating or the film formation property after coating.

於本發明中,高分子化合物係可使用任意者。 In the present invention, any of the polymer compounds can be used.

例如,可舉出烴樹脂、聚苯乙烯樹脂(例如包含丙烯腈/丁二烯/苯乙烯共聚物(ABS樹脂)、丙烯腈/苯乙烯共聚物(AS樹脂)、甲基丙烯酸甲酯/苯乙烯共聚物(MS樹脂))、酚醛清漆樹脂、酚樹脂、環氧樹脂、三聚氰胺樹脂、尿素樹脂、不飽和聚酯樹脂、醇酸樹脂、聚胺基甲酸酯樹脂、聚醯亞胺樹脂、聚乙烯樹脂、聚丙烯、聚氯乙烯 樹脂、聚醋酸乙烯酯樹脂、Teflon(註冊商標)、(甲基)丙烯酸樹脂、聚醯胺樹脂、聚縮醛樹脂、聚碳酸酯樹脂、聚苯醚樹脂、聚對苯二甲酸丁二酯樹脂、聚對苯二甲酸乙二酯樹脂、聚苯硫樹脂、聚碸樹脂、聚醚碸樹脂、聚芳酯樹脂、聚醚醚酮樹脂、聚醯胺醯亞胺樹脂等之合成樹脂、或天然橡膠等之天然樹脂。其中,較佳為烴樹脂、ABS樹脂、AS樹脂、MS樹脂、聚胺基甲酸酯樹脂、酚醛清漆樹脂、聚醯亞胺樹脂,更佳為烴樹脂、MS樹脂,尤佳為丙烯酸樹脂、ABS樹脂、AS樹脂、MS樹脂。 For example, a hydrocarbon resin or a polystyrene resin (for example, an acrylonitrile/butadiene/styrene copolymer (ABS resin), an acrylonitrile/styrene copolymer (AS resin), methyl methacrylate/benzene may be mentioned. Ethylene copolymer (MS resin)), novolak resin, phenol resin, epoxy resin, melamine resin, urea resin, unsaturated polyester resin, alkyd resin, polyurethane resin, polyimide resin, Polyethylene resin, polypropylene, polyvinyl chloride Resin, polyvinyl acetate resin, Teflon (registered trademark), (meth)acrylic resin, polyamide resin, polyacetal resin, polycarbonate resin, polyphenylene ether resin, polybutylene terephthalate resin , synthetic resin such as polyethylene terephthalate resin, polyphenylene sulfide resin, polyfluorene resin, polyether oxime resin, polyarylate resin, polyetheretherketone resin, polyamidoximine resin, or natural A natural resin such as rubber. Among them, a hydrocarbon resin, an ABS resin, an AS resin, an MS resin, a polyurethane resin, a novolak resin, a polyimine resin, preferably a hydrocarbon resin, an MS resin, or preferably an acrylic resin, is preferred. ABS resin, AS resin, MS resin.

於本發明中,黏結劑係按照需要可組合2種以上使用。 In the present invention, the binder may be used in combination of two or more kinds as needed.

於本發明中,烴樹脂係可使用任意者。 In the present invention, any of the hydrocarbon resins can be used.

本發明中的烴樹脂係意指基本上僅由碳原子與氫原子所構成的樹脂,但只要基本的骨架為烴樹脂,則側鏈亦可含有其它原子。即,於僅由碳原子與氫原子所構成的烴樹脂中,如丙烯酸樹脂、聚乙烯醇樹脂、聚乙烯縮醛樹脂、聚乙烯吡咯啶酮樹脂之在主鏈直接鍵結烴基以外的官能基之情況,亦包含於本發明之烴樹脂中。此時,在主鏈直接鍵結烴基而成之重複單元的含量,係相對於樹脂的全部重複單元,較佳為30莫耳%以上。 The hydrocarbon resin in the present invention means a resin consisting essentially of only carbon atoms and hydrogen atoms, but the side chain may contain other atoms as long as the basic skeleton is a hydrocarbon resin. That is, in a hydrocarbon resin composed only of carbon atoms and hydrogen atoms, such as an acrylic resin, a polyvinyl alcohol resin, a polyvinyl acetal resin, or a polyvinylpyrrolidone resin, a functional group other than a hydrocarbon group directly bonded to a main chain The case is also included in the hydrocarbon resin of the present invention. In this case, the content of the repeating unit in which the hydrocarbon group is directly bonded to the main chain is preferably 30 mol% or more based on all the repeating units of the resin.

作為符合上述條件之烴樹脂,例如可舉出聚苯乙烯樹脂、萜烯樹脂、萜烯酚樹脂、改性萜烯樹脂、氫化萜烯樹脂、氫化萜烯酚樹脂、松香、松香酯、氫化松香、氫化松香酯、聚合松香、聚合松香酯、改性松香、松香改性酚樹脂、烷基酚樹脂、脂肪族石油樹脂、芳 香族石油樹脂、氫化石油樹脂、改性石油樹脂、脂環族石油樹脂、香豆酮石油樹脂、茚石油樹脂、聚苯乙烯-聚烯烴共聚物、烯烴聚合物(例如甲基戊烯共聚物)、及環烯烴聚合物(例如降冰片烯共聚物、二環戊二烯共聚物、四環十二烯共聚物)等。 Examples of the hydrocarbon resin satisfying the above conditions include a polystyrene resin, a terpene resin, a terpene phenol resin, a modified terpene resin, a hydrogenated terpene resin, a hydrogenated terpene phenol resin, a rosin, a rosin ester, and a hydrogenated rosin. , hydrogenated rosin ester, polymerized rosin, polymerized rosin ester, modified rosin, rosin modified phenol resin, alkyl phenol resin, aliphatic petroleum resin, aromatic Aromatic petroleum resin, hydrogenated petroleum resin, modified petroleum resin, alicyclic petroleum resin, coumarone petroleum resin, ruthenium petroleum resin, polystyrene-polyolefin copolymer, olefin polymer (for example, methylpentene copolymer) And a cyclic olefin polymer (for example, a norbornene copolymer, a dicyclopentadiene copolymer, a tetracyclododecene copolymer) or the like.

烴樹脂較佳為其中的聚苯乙烯樹脂、萜烯樹脂、松香、石油樹脂、氫化化松香、聚合松香、烯烴聚合物或環烯烴聚合物,更佳為聚苯乙烯樹脂、萜烯樹脂、松香、烯烴聚合物或環烯烴聚合物,尤佳為聚苯乙烯樹脂、萜烯樹脂、松香、烯烴聚合物、聚苯乙烯樹脂或環烯烴聚合物,尤更佳為聚苯乙烯樹脂、萜烯樹脂、松香、環烯烴聚合物或烯烴聚合物,特佳為聚苯乙烯樹脂或環烯烴單體聚合物。 The hydrocarbon resin is preferably a polystyrene resin, a terpene resin, a rosin, a petroleum resin, a hydrogenated rosin, a polymerized rosin, an olefin polymer or a cycloolefin polymer, more preferably a polystyrene resin, a terpene resin, or a rosin. An olefin polymer or a cycloolefin polymer, particularly preferably a polystyrene resin, a terpene resin, a rosin, an olefin polymer, a polystyrene resin or a cycloolefin polymer, more preferably a polystyrene resin or a terpene resin. A rosin, a cycloolefin polymer or an olefin polymer, particularly preferably a polystyrene resin or a cycloolefin monomer polymer.

作為聚苯乙烯樹脂,具體地可舉出聚苯乙烯、苯乙烯-丙烯腈樹脂、丙烯腈-丁二烯-苯乙烯樹脂、甲基丙烯酸甲酯-苯乙烯樹脂。較佳為甲基丙烯酸甲酯-苯乙烯樹脂。從對於半導體基板的高溫處理步驟,要求耐熱性來看,250℃加熱時的排氣之發生量較佳為3質量%以下。更佳為2質量%以下的樹脂。作為甲基丙烯酸甲酯-苯乙烯樹脂之市售品,特佳可使用Estyrene MS-200NT、Estyrene MS-300、Estyrene MS-500、Estyrene MS-600(新日鐵住金化學(股))或Cevian MAS10、MAS30(DAICEL POLYMER(股))。 Specific examples of the polystyrene resin include polystyrene, styrene-acrylonitrile resin, acrylonitrile-butadiene-styrene resin, and methyl methacrylate-styrene resin. Preferred is methyl methacrylate-styrene resin. From the viewpoint of heat resistance for the high-temperature treatment step of the semiconductor substrate, the amount of exhaust gas generated when heated at 250 ° C is preferably 3% by mass or less. More preferably, it is 2 mass % or less of resin. As a commercial product of methyl methacrylate-styrene resin, it is possible to use Estyrene MS-200NT, Estyrene MS-300, Estyrene MS-500, Estyrene MS-600 (Nippon Steel & Metal Chemical Co., Ltd.) or Cevian MAS10, MAS30 (DAICEL POLYMER).

作為環烯烴聚合物,可舉出降冰片烯系聚合物、單環的環狀烯烴之聚合物、環狀共軛二烯之聚合物 、乙烯基脂環式烴聚合物、及此等聚合物之氫化物等。作為環烯烴聚合物之較佳例,可舉出含有至少1種以上之下述通式(II)所示的重複單元之加成(共)聚合物,及更含有通式(I)所示的重複單元之至少1種以上而成之加成(共)聚合物。又,作為環烯烴聚合物之其它較佳例,可舉出含有至少1種之通式(III)所示的環狀重複單元之開環(共)聚合物。 Examples of the cycloolefin polymer include a norbornene-based polymer, a monocyclic cyclic olefin polymer, and a cyclic conjugated diene polymer. , vinyl alicyclic hydrocarbon polymers, and hydrides of such polymers, and the like. Preferred examples of the cycloolefin polymer include an addition (co)polymer containing at least one or more repeating units represented by the following formula (II), and further containing the formula (I). Addition (co)polymer of at least one of the repeating units. Further, as another preferred example of the cycloolefin polymer, a ring-opening (co)polymer containing at least one cyclic repeating unit represented by the formula (III) may be mentioned.

式中,m表示0~4之整數。R1~R6各自獨立地表示氫原子或碳數1~10的烴基,X1~X3及Y1~Y3各自表示氫原子、碳數1~10的烴基、鹵素原子、經鹵素原子取代之碳數1~10的烴基、-(CH2)nCOOR11、-(CH2)nOCOR12、-(CH2)nNCO、-(CH2)nNO2、-(CH2)nCN、-(CH2)nCONR13R14、-(CH2)nNR15R16、-(CH2)nOZ、-(CH2)nW、或由X1與Y1、X2與Y2、或X3與Y3所構成的(-CO)2O、(-CO)2NR17。R11、R12、R13、R14、R15、R16及R17各自表示氫原子或烴基(較佳為碳數1~20的烴基),Z表示烴基或經鹵素取代的烴基,W表示SiR18 pD3-p(R18表示碳數1~10的烴基,D表示鹵素原子、-OCOR18或-OR18,p表示0~3之整數)。n表示0~10之整數。 Where m represents an integer from 0 to 4. R 1 to R 6 each independently represent a hydrogen atom or a hydrocarbon group having 1 to 10 carbon atoms, and each of X 1 to X 3 and Y 1 to Y 3 represents a hydrogen atom, a hydrocarbon group having 1 to 10 carbon atoms, a halogen atom, and a halogen atom. Substituted hydrocarbon group having 1 to 10 carbon atoms, -(CH 2 )nCOOR 11 , -(CH 2 )nOCOR 12 , -(CH 2 )nNCO, -(CH 2 )nNO 2 , -(CH 2 )nCN, -( CH 2 )nCONR 13 R 14 , —(CH 2 )nNR 15 R 16 , —(CH 2 )nOZ, —(CH 2 )nW, or by X 1 and Y 1 , X 2 and Y 2 , or X 3 (-CO) 2 O, (-CO) 2 NR 17 composed of Y 3 . R 11 , R 12 , R 13 , R 14 , R 15 , R 16 and R 17 each represent a hydrogen atom or a hydrocarbon group (preferably a hydrocarbon group having 1 to 20 carbon atoms), and Z represents a hydrocarbon group or a halogen-substituted hydrocarbon group, SiR 18 p D 3-p (R 18 represents a hydrocarbon group having 1 to 10 carbon atoms, D represents a halogen atom, -OCOR 18 or -OR 18 , and p represents an integer of 0 to 3). n represents an integer from 0 to 10.

降冰片烯系聚合物係揭示於日本特開平10-7732號公報、日本特表2002-504184號公報、US2004/229157A1號或WO2004/070463A1號等中。降冰片烯系聚合物係可藉由將降冰片烯系多環狀不飽和化合物彼此予以加成聚合而得。又,視需要亦可將降冰片烯系多環狀不飽和化合物與乙烯、丙烯、丁烯,如丁二烯、異戊二烯之共軛二烯,如亞乙基降冰片烯之非共軛二烯予以加成聚合。此降冰片烯系聚合物係由三井化學(股)以Apel之商品名所發售,有玻璃轉移溫度(Tg)不同的例如APL8008T(Tg70℃)、APL6013T(Tg125℃)或APL6015T(Tg145℃)等之等級。由POLYPLASTICS(股)發售TOPAS8007、同5013、同6013、同6015等之顆粒。 The norbornene-based polymer is disclosed in Japanese Laid-Open Patent Publication No. Hei 10-7732, Japanese Patent Publication No. 2002-504184, No. 2004/229157 A1, or WO2004/070463A1. The norbornene-based polymer can be obtained by subjecting a norbornene-based polycyclic unsaturated compound to addition polymerization. Further, if desired, the norbornene-based polycyclic unsaturated compound may be copolymerized with ethylene, propylene, butylene, such as butadiene or isoprene, such as ethylidene norbornene. The conjugated diene is subjected to addition polymerization. The norbornene-based polymer is commercially available from Mitsui Chemicals Co., Ltd. under the trade name of Apel, and has a glass transition temperature (Tg) such as APL8008T (Tg70°C), APL6013T (Tg125°C), or APL6015T (Tg145°C). grade. The TOPAS 8007, the same 5013, the same 6013, the same 6015 and the like are sold by POLYPLASTICS.

再者,由Ferrania公司發售Appear 3000。 Furthermore, Appear 3000 is available from Ferrania.

降冰片烯系聚合物氫化物係可如日本特開平1-240517號公報、日本特開平7-196736號公報、日本特開昭60-26024號公報、日本特開昭62-19801號公報、日本特開2003-1159767號公報或日本特開2004-309979號公報等中揭示,在將多環狀不飽和化合物予以加成聚合或複分解開環聚合後,藉由氫化而製造。 The norbornene-based polymer hydride system is disclosed in Japanese Unexamined Patent Publication No. Hei No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. JP-A-2003-159979 or JP-A-2004-309979 discloses that a polycyclic unsaturated compound is subjected to addition polymerization or metathesis ring-opening polymerization, followed by hydrogenation.

前述通式(III)中,R5及R6較佳為氫原子或甲基,X3及Y3較佳為氫原子,可適宜選擇其它之基。此降冰片烯系樹脂係由JSR(股)以阿通(Arton)G或阿通F的商品名所發售,及由日本ZEON(股)以雷歐那(Zeonor)ZF14、ZF16、雷歐那克司(Zeonex)250、同280、同480R的商品名所市售,可使用此等。 In the above formula (III), R 5 and R 6 are preferably a hydrogen atom or a methyl group, and X 3 and Y 3 are preferably a hydrogen atom, and other groups may be appropriately selected. This norbornene-based resin is sold by JSR (shares) under the trade names of Arton G or Atong F, and by Zeon (Zeonor) ZF14, ZF16, and Rayonak. (Zeonex) 250, the same as 280, the same as the 480R trade name, can be used.

高分子化合物之由凝膠滲透層析(GPC)法所測定的聚苯乙烯換算之重量平均分子量較佳為10,000~1,000,000,更佳為50,000~500,000,尤佳為100,000~300,000。 The polystyrene-equivalent weight average molecular weight of the polymer compound as measured by gel permeation chromatography (GPC) is preferably 10,000 to 1,000,000, more preferably 50,000 to 500,000, and particularly preferably 100,000 to 300,000.

接著劑層前驅物具有高分子化合物時,高分子化合物之含量,相對於本發明之接著劑層前驅物的全部固體成分,較佳為5質量%以上,更佳為10質量%以上,尤佳為20質量%以上。 When the polymer layer precursor has a polymer compound, the content of the polymer compound is preferably 5% by mass or more, and more preferably 10% by mass or more, more preferably 10% by mass or more based on the total solid content of the adhesive layer precursor of the present invention. It is 20% by mass or more.

又,高分子化合物之含量,相對於本發明的接著劑層前驅物之全部固體成,較佳為70質量%以下,更佳為60質量%以下,尤佳為50質量%以下,特佳為40質量%以下。 In addition, the content of the polymer compound is preferably 70% by mass or less, more preferably 60% by mass or less, even more preferably 50% by mass or less, based on the total solids of the adhesive layer precursor of the present invention, and particularly preferably 40% by mass or less.

高分子化合物係可為僅1種類,也可為2種類以上。於高分子化合物為2種類以上時,其合計較佳為上述範圍。 The polymer compound may be used alone or in combination of two or more types. When the polymer compound is two or more types, the total amount thereof is preferably in the above range.

又,聚合性單體及高分子化合物之含量比率(質量比)(自由基聚合性單體/高分子化合物)較佳為100/0~10/90,更佳為100/0~20/80,尤佳為100/0~30/70。 Further, the content ratio (mass ratio) of the polymerizable monomer and the polymer compound (radical polymerizable monomer/polymer compound) is preferably 100/0 to 10/90, more preferably 100/0 to 20/80. , especially good for 100/0~30/70.

<非聚合性之具有氟原子的高分子化合物> <Non-polymerizable polymer compound having a fluorine atom>

本發明之接著劑前驅物層較佳為包含非聚合性之具有氟原子的高分子化合物。作為非聚合性之具有氟原的高分子化合物,較宜使用由1種或2種以上的含氟單官能單體所成之聚合物。更具體地,可舉出由四氟乙烯、六氟丙烯、四氟環氧乙烷、六氟環氧丙烷、全氟烷基乙烯基醚、氯三氟乙烯、偏二氟乙烯、含全氟烷基的(甲基) 丙烯酸酯中選出的1種或2種以上之含氟單官能單體的均聚物或此等單體之共聚物、該含氟單官能單體之1種或2種以上與乙烯之共聚物、該含氟單官能單體之1種或2種以上與氯三氟乙烯之共聚物中選出的至少1種之含氟樹脂等。 The adhesive precursor layer of the present invention preferably contains a non-polymerizable polymer compound having a fluorine atom. As the polymer compound having a non-polymerizable fluorocarbon, a polymer composed of one or two or more kinds of fluorine-containing monofunctional monomers is preferably used. More specifically, it may be exemplified by tetrafluoroethylene, hexafluoropropylene, tetrafluoroethylene oxide, hexafluoropropylene oxide, perfluoroalkyl vinyl ether, chlorotrifluoroethylene, vinylidene fluoride, and perfluoro-containing Alkyl (methyl) a homopolymer of one or more fluorine-containing monofunctional monomers selected from the group consisting of acrylates, a copolymer of such monomers, a copolymer of one or more of the fluorine-containing monofunctional monomers and ethylene And at least one fluorine-containing resin selected from the group consisting of one or two or more kinds of fluorine-containing monofunctional monomers and a copolymer of chlorotrifluoroethylene.

作為非聚合性之具有氟原子的高分子化合物,較佳為由含全氟烷基的(甲基)丙烯酸酯可合成之含全氟烷基的(甲基)丙烯酸樹脂。 The non-polymerizable polymer compound having a fluorine atom is preferably a perfluoroalkyl group-containing (meth)acrylic resin which can be synthesized from a perfluoroalkyl group-containing (meth) acrylate.

作為含全氟烷基的(甲基)丙烯酸酯,具體地較佳為下述式(101)所示之化合物。 The (meth) acrylate containing a perfluoroalkyl group is specifically preferably a compound represented by the following formula (101).

通式(101)中,R101、R102、R103各自獨立地表示氫原子、烷基或鹵素原子。Y101表示單鍵或由-CO-、-O-、-NH-、2價的脂肪族基、2價的芳香族基及彼等之組合所組成之群組中選出的2價連結基。Rf係具有至少一個的氟原子或氟原子之一價有機基。 In the formula (101), R 101 , R 102 and R 103 each independently represent a hydrogen atom, an alkyl group or a halogen atom. Y 101 represents a single bond or a divalent linking group selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and a combination thereof. Rf has at least one fluorine atom or one fluorine group organic atom.

通式(101)中,R101、R102、R103所示的烷基之例,較佳為碳數1~8的烷基,例如可舉出甲基、乙基、丙基、辛基、異丙基、第三丁基、異戊基、2-乙基己基、2-甲基己基、環戊基等。芳基之例較佳為碳數6~12的芳基,可舉出苯基、1-萘基、2-萘基等。作為R101~R103,尤佳為氫原子或甲基。 In the formula (101), examples of the alkyl group represented by R 101 , R 102 and R 103 are preferably an alkyl group having 1 to 8 carbon atoms, and examples thereof include a methyl group, an ethyl group, a propyl group and an octyl group. , isopropyl, tert-butyl, isopentyl, 2-ethylhexyl, 2-methylhexyl, cyclopentyl and the like. The aryl group is preferably an aryl group having 6 to 12 carbon atoms, and examples thereof include a phenyl group, a 1-naphthyl group, and a 2-naphthyl group. R 101 to R 103 are particularly preferably a hydrogen atom or a methyl group.

Y101表示單鍵或由-CO-、-O-、-NH-、2價的 脂肪族基、2價的芳香族基及彼等之組合所組成之群組中選出的2價連結基,2價的脂肪族基係鏈狀構造比環狀構造還佳,而且直鏈狀構造係比具有分支的鏈狀構造還佳。2價的脂肪族基之碳原子數較佳為1~20,更佳為1~15,尤佳為1~12,尤較佳為1~10,尤更佳為1~8,特佳為1~4。作為2價的芳香族基之例,可舉出伸苯基、取代伸苯基、伸萘基及取代伸萘基,更佳為伸苯基。 Y 101 represents a single bond or a divalent linking group selected from the group consisting of -CO-, -O-, -NH-, a divalent aliphatic group, a divalent aromatic group, and a combination thereof. The divalent aliphatic group chain structure is better than the ring structure, and the linear structure is better than the branched chain structure. The number of carbon atoms of the divalent aliphatic group is preferably from 1 to 20, more preferably from 1 to 15, particularly preferably from 1 to 12, particularly preferably from 1 to 10, particularly preferably from 1 to 8, particularly preferably 1~4. Examples of the divalent aromatic group include a stretched phenyl group, a substituted phenylene group, an extended naphthyl group, and a substituted —naphthyl group, and more preferably a stretched phenyl group.

Y101較佳為2價的直鏈狀構造之脂肪族基。 Y 101 is preferably a divalent linear aliphatic group.

作為Rf表示之具有氟原子的一價有機基,並沒有特別的限定,但較佳為碳數1~30的含氟烷基,更佳為碳數1~20,特佳為碳數1~15的含氟烷基。此含氟烷基係可為直鏈{例如-CF2CF3、-CH2(CF2)4H、-CH2(CF2)8CF3、-CH2CH2(CF2)4H等},也可具有分支構造{例如-CH(CF3)2、-CH2CF(CF3)2、-CH(CH3)CF2CF3、-CH(CH3)(CF2)5CF2H等},而且也可具有脂環式構造(較佳為5員環或6員環,例如全氟環己基、全氟環戊基或經此等取代之烷基等),亦可具有醚鍵(例如-CH2OCH2CF2CF3、-CH2CH2OCH2C4F8H、-CH2CH2OCH2CH2C8F17、-CH2CF2OCF2CF2OCF2CF2H等)。又,也可為全氟烷基。 The monovalent organic group having a fluorine atom represented by Rf is not particularly limited, but is preferably a fluorine-containing alkyl group having 1 to 30 carbon atoms, more preferably 1 to 20 carbon atoms, particularly preferably 1 to 20 carbon atoms. A fluorine-containing alkyl group of 15. The fluorine-containing alkyl group may be linear {e.g., -CF 2 CF 3 , -CH 2 (CF 2 ) 4 H, -CH 2 (CF 2 ) 8 CF 3 , -CH 2 CH 2 (CF 2 ) 4 H Etc., may also have a branched configuration {eg, -CH(CF 3 ) 2 , -CH 2 CF(CF 3 ) 2 , -CH(CH 3 )CF 2 CF 3 , -CH(CH 3 )(CF 2 ) 5 CF 2 H or the like, and may also have an alicyclic structure (preferably a 5-membered ring or a 6-membered ring, such as a perfluorocyclohexyl group, a perfluorocyclopentyl group or an alkyl group substituted therewith), or Has an ether linkage (eg, -CH 2 OCH 2 CF 2 CF 3 , -CH 2 CH 2 OCH 2 C 4 F 8 H, -CH 2 CH 2 OCH 2 CH 2 C 8 F 17 , -CH 2 CF 2 OCF 2 CF 2 OCF 2 CF 2 H, etc.). Further, it may be a perfluoroalkyl group.

即,作為含全氟烷基的(甲基)丙烯酸樹脂,具體地具有下述式(102)表示之重複單元。 In other words, the perfluoroalkyl group-containing (meth)acrylic resin specifically has a repeating unit represented by the following formula (102).

通式(102)中,R101、R102、R103、Y101、Rf各自係與通式(101)同義,較佳的態樣亦同義。 In the formula (102), R 101 , R 102 , R 103 , Y 101 and Rf are each synonymous with the formula (101), and preferred embodiments are also synonymous.

含全氟烷基的(甲基)丙烯酸樹脂,從剝離性之觀點來看,除了任意之含全氟烷基的(甲基)丙烯酸酯,還可選擇共聚合成分。作為可形成共聚合成分的自由基聚合性化合物,例如可舉出由丙烯酸酯類、甲基丙烯酸酯類、N,N-2取代丙烯醯胺類、N,N-2取代甲基丙烯醯胺類、苯乙烯類、丙烯腈類、甲基丙烯腈類等中選出的自由基聚合性化合物。 The perfluoroalkyl group-containing (meth)acrylic resin may be selected from the viewpoint of releasability in addition to any perfluoroalkyl group-containing (meth) acrylate. Examples of the radically polymerizable compound capable of forming a copolymerization component include acrylates, methacrylates, N,N-2 substituted acrylamides, and N,N-2 substituted methacrylamides. A radically polymerizable compound selected from the group consisting of styrenes, acrylonitriles, methacrylonitriles and the like.

更具體地,例如可舉出丙烯酸烷酯(該烷基之碳原子數較佳為1~20)等之丙烯酸酯類(例如,丙烯酸甲酯、丙烯酸乙酯、丙烯酸丙酯、丙烯酸丁酯、丙烯酸戊酯、丙烯酸乙基己酯、丙烯酸辛酯、丙烯酸第三辛酯、丙烯酸氯乙酯、丙烯酸2,2-二甲基羥基丙酯、丙烯酸5-羥基戊酯、三羥甲基丙烷單丙烯酸酯、季戊四醇單丙烯酸酯、丙烯酸環氧丙酯、丙烯酸苄酯、丙烯酸甲氧基苄酯、丙烯酸糠酯、丙烯酸四氫糠酯等)、丙烯酸芳酯(例如,丙烯酸苯酯等)、甲基丙烯酸烷酯(該烷基的碳原子較佳為1~20)等之甲基丙烯酸酯類(例如,甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸丙酯、甲基丙烯酸異丙酯、甲基丙烯酸戊酯、甲基丙烯酸己酯、甲基丙烯酸環己酯、甲基丙烯酸苄酯、甲基丙烯酸氯苄酯、甲基丙烯酸辛酯、甲基丙烯酸4-羥基丁酯、甲基丙烯酸5-羥基戊酯、甲基丙烯酸2,2-二甲基-3-羥基丙酯、三羥甲基丙烷單甲基丙烯酸酯、季戊四醇單甲基丙烯酸酯、甲基丙 烯酸環氧丙酯、甲基丙烯酸糠酯、甲基丙烯酸四氫糠酯等)、甲基丙烯酸芳酯(例如,甲基丙烯酸苯酯、甲基丙烯酸甲苯酯、甲基丙烯酸萘酯等)、苯乙烯、烷基苯乙烯等之苯乙烯(例如,甲基苯乙烯、二甲基苯乙烯、三甲基苯乙烯、乙基苯乙烯、二乙基苯乙烯、異丙基苯乙烯、丁基苯乙烯、己基苯乙烯、環己基苯乙烯、癸基苯乙烯、苄基苯乙烯、氯甲基苯乙烯、三氟甲基苯乙烯、乙氧基甲基苯乙烯、乙醯氧基甲基苯乙烯等)、烷氧基苯乙烯(例如,甲氧基苯乙烯、4-甲氧基-3-甲基苯乙烯、二甲氧基苯乙烯等)、鹵素苯乙烯(例如,氯苯乙烯、二氯苯乙烯、三氯苯乙烯、四氯苯乙烯、五氯苯乙烯、溴苯乙烯、二溴苯乙烯、碘苯乙烯、氟苯乙烯、三氟苯乙烯、2-溴-4-三氟甲基苯乙烯、4-氟-3-三氟甲基苯乙烯等)、丙烯腈、甲基丙烯腈丙烯酸、含有羧酸的自由基聚合性化合物(丙烯酸、甲基丙烯酸、伊康酸、巴豆酸、異巴豆酸、馬來酸、對羧基苯乙烯、及此等之酸基的金屬鹽、銨鹽化合物等),從剝離性之觀點來看,特佳為碳數1~24的具有烴基之(甲基)丙烯酸酯,例如可舉出(甲基)丙烯酸之甲酯、丁酯、2-乙基己酯、月桂酯、十八酯、環氧丙酯等,特佳為2-乙基己酯、月桂酯、十八酯等之高級醇的(甲基)丙烯酸酯,尤其丙烯酸酯。 More specifically, for example, acrylates such as alkyl acrylate (the alkyl group preferably has 1 to 20 carbon atoms) (for example, methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, etc.) may be mentioned. Amyl acrylate, ethylhexyl acrylate, octyl acrylate, third octyl acrylate, chloroethyl acrylate, 2,2-dimethylhydroxypropyl acrylate, 5-hydroxypentyl acrylate, trimethylolpropane Acrylate, pentaerythritol monoacrylate, glycidyl acrylate, benzyl acrylate, methoxybenzyl acrylate, decyl acrylate, tetrahydrofurfuryl acrylate, etc., aryl acrylate (eg, phenyl acrylate, etc.), A a methacrylate such as an alkyl acrylate (the carbon atom of the alkyl group is preferably from 1 to 20) (for example, methyl methacrylate, ethyl methacrylate, propyl methacrylate, methacrylic acid) Propyl ester, amyl methacrylate, hexyl methacrylate, cyclohexyl methacrylate, benzyl methacrylate, benzyl chloride methacrylate, octyl methacrylate, 4-hydroxybutyl methacrylate, 5-hydroxypentyl methacrylate, methyl propyl acrylate Acid 2,2-dimethyl-3-hydroxypropyl methacrylate, trimethylolpropane monomethacrylate, pentaerythritol monomethacrylate, methacrylic Ethylene methacrylate, methacrylate, tetrahydrofurfuryl methacrylate, etc., aryl methacrylate (for example, phenyl methacrylate, toluene methacrylate, naphthyl methacrylate, etc.) Styrene such as styrene or alkylstyrene (for example, methyl styrene, dimethyl styrene, trimethyl styrene, ethyl styrene, diethyl styrene, isopropyl styrene, butyl Styrene, hexyl styrene, cyclohexyl styrene, mercapto styrene, benzyl styrene, chloromethyl styrene, trifluoromethyl styrene, ethoxymethyl styrene, ethoxymethyl methyl Styrene, etc.), alkoxystyrene (eg, methoxystyrene, 4-methoxy-3-methylstyrene, dimethoxystyrene, etc.), halogen styrene (eg, chlorostyrene) , Dichlorostyrene, Trichlorostyrene, Tetrachlorostyrene, Pentachlorostyrene, Bromostyrene, Dibromostyrene, Iodostyrene, Fluorostyrene, Trifluorostyrene, 2-Bromo-4-III Fluoromethylstyrene, 4-fluoro-3-trifluoromethylstyrene, etc., acrylonitrile, methacrylonitrile acrylic acid, free radical polymerization containing carboxylic acid a compound (acrylic acid, methacrylic acid, itaconic acid, crotonic acid, isocrotonic acid, maleic acid, p-carboxystyrene, a metal salt of such an acid group, an ammonium salt compound, etc.), from the viewpoint of peelability In particular, a (meth) acrylate having a hydrocarbon group of 1 to 24 carbon atoms is exemplified, and examples thereof include methyl (meth)acrylate, butyl ester, 2-ethylhexyl ester, lauryl ester, and octadecyl ester. A glycidyl ester or the like is particularly preferably a (meth) acrylate of a higher alcohol such as 2-ethylhexyl ester, lauryl ester or octadecyl ester, especially an acrylate.

作為上述非聚合性之具有氟原子的高分子化合物,於市售者中,可舉出Teflon(註冊商標)(Du Pont公司)、Tefzel(Du Pont公司)、Fluon(旭硝子公司)、Halar(Solvay Solexis公司)、Heiler(Solvay Solexis公司)、 Lumiflon(旭硝子公司)、Aflas(旭硝子公司)、Cefral Soft(CENTRAL硝子公司)、Cefral Coat(CENTRAL硝子公司)等之氟樹脂、Viton(Du Pont公司)、Kalrez(Du Pont公司)、SIFEL(信越化學工業公司)等之商標名的氟橡膠、Krytox(Du Pont公司)、Fomblin(Daitoku Tech公司)、Demnum(DAIKIN工業公司)等之全氟聚醚油為代表之各種的氟油、或Daifree FB系列(DAIKIN工業公司)、Megafac系列(DIC公司)等之商標名之含氟的脫模劑等,惟不受此等所限定,只要是非聚合性之具有氟原子的高分子化合物,則任何者皆可適用。 Examples of the non-polymerizable polymer compound having a fluorine atom include Teflon (registered trademark) (Du Pont), Tefzel (Du Pont), Fluon (Asahi Glass), and Halar (Solvay). Solexis), Heiler (Solvay Solexis), Lumiflon (Asahi Glass Co., Ltd.), Aflas (Asahi Glass Co., Ltd.), Cefral Soft (CENTRAL Glass Co., Ltd.), Cefral Coat (CENTRAL Glass Co., Ltd.), fluororesin, Viton (Du Pont), Kalrez (Du Pont), SIFEL (Shin-Etsu Chemical) Industrial company), such as fluororubber, Krytox (Du Pont), Fomblin (Daitoku Tech), Demnum (DAIKIN Industries), etc., various types of fluoro oil, or Daifree FB series (DAIKIN Industrial Co., Ltd.), a fluorine-containing release agent such as the Megafac series (DIC Corporation), etc., but not limited thereto, as long as it is a non-polymerizable polymer compound having a fluorine atom, applicable.

非聚合性之具有氟原子的高分子化合物之由凝膠滲透層析(GPC)法所測定的聚苯乙烯換算之重量平均分子量,較佳為2000~100000,更佳為2000~50000,最佳為2000~10000。 The polystyrene-equivalent weight average molecular weight measured by a gel permeation chromatography (GPC) method of a non-polymerizable polymer compound having a fluorine atom is preferably from 2,000 to 100,000, more preferably from 2,000 to 50,000, most preferably It is 2000~10000.

非聚合性之具有氟原子的高分子化合物,當於接著劑層前驅物中含有具有氟原子的自由基聚合性化合物時,尤其剝離性之提高效果大,以具有氟原子的自由基聚合性化合物與非聚合性之具有氟原子的高分子化合物之組合而使用者係最佳。 When a polymer compound having a fluorine atom having a non-polymerizable group contains a radical polymerizable compound having a fluorine atom in the precursor of the adhesive layer, the effect of improving the releasability is large, and a radical polymerizable compound having a fluorine atom is used. The combination with a non-polymerizable polymer compound having a fluorine atom is preferred by the user.

於本發明中,接著劑層前驅物中之具有氟原子的自由基聚合性化合物與非聚合性之具有氟原子的高分子化合物之比(質量比)較佳為5:95~50:50,更佳為10:90~40:60,尤佳為15:85~30:70。 In the present invention, the ratio (mass ratio) of the radically polymerizable compound having a fluorine atom to the nonpolymerizable polymer compound having a fluorine atom in the precursor of the adhesive layer is preferably 5:95 to 50:50. More preferably 10:90~40:60, especially 15:85~30:70.

具有氟原子的非聚合性之高分子化合物之含量,從良好的剝離性之觀點來看,相對於上述接著劑層 前驅物之全部固體成分,較佳為1~99質量%,更佳為3~95質量%,尤佳為5~90質量%。 The content of the non-polymerizable polymer compound having a fluorine atom is relative to the above-mentioned adhesive layer from the viewpoint of good peelability The total solid content of the precursor is preferably from 1 to 99% by mass, more preferably from 3 to 95% by mass, even more preferably from 5 to 90% by mass.

<<鏈轉移劑>> <<chain transfer agent>>

本發明中之接著劑層前驅物較佳為含有鏈轉移劑。鏈轉移劑例如係在高分子辭典第三版(高分子學會編,2005年)683-684頁中定義。作為鏈轉移劑,例如使用在分子內具有SH、PH、SiH、GeH之化合物群。此等係將氫供予低活性的自由基種,生成自由基,或於被氧化後,可藉由脫質子而生成自由基。於暫時接著劑中,特佳可使用硫醇化合物(例如2-巰基苯并咪唑類、2-巰基苯并噻唑類、2-巰基苯并唑類、3-巰基三唑類、5-巰基四唑類等)。 The adhesive layer precursor of the present invention preferably contains a chain transfer agent. Chain transfer agents are defined, for example, in the third edition of the Polymer Dictionary (edited by the Society of Polymerics, 2005) at pages 683-684. As the chain transfer agent, for example, a compound group having SH, PH, SiH, or GeH in the molecule is used. These hydrogens are supplied to low-active radical species to form free radicals, or after being oxidized, free radicals can be generated by deprotonation. In the temporary adhesive, it is particularly preferable to use a thiol compound (for example, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-mercaptobenzoene) Azole, 3-mercaptotriazole, 5-mercaptotetrazole, etc.).

接著劑層前驅物具有鏈轉移劑時,鏈轉移劑之較佳含量,相對於接著劑層前驅物之全部固體成分100質量份,較佳為0.01~20質量份,更佳為1~10質量份,特佳為1~5質量份。 When the agent layer precursor has a chain transfer agent, the content of the chain transfer agent is preferably 0.01 to 20 parts by mass, more preferably 1 to 10 parts by mass based on 100 parts by mass of the total solid content of the adhesive layer precursor. It is preferably 1 to 5 parts by mass.

鏈轉移劑係可為僅1種類,也可為2種類以上。於鏈轉移劑為2種類以上時,其合計較佳為上述範圍。 The chain transfer agent may be used alone or in combination of two or more types. When the chain transfer agent is two or more types, the total amount thereof is preferably in the above range.

<<聚合抑制劑>> <<Polymerization inhibitor>>

於本發明之接著劑層前驅物中,在接著劑層前驅物之製造中或保存中,為了防止高分子化合物及自由基聚合性單體之不必要的熱聚合,較佳為添加少量的聚合抑制劑。 In the adhesive layer precursor of the present invention, in order to prevent unnecessary thermal polymerization of the polymer compound and the radical polymerizable monomer during the production or storage of the adhesive layer precursor, it is preferred to add a small amount of polymerization. Inhibitor.

作為聚合抑制劑,例如可合適地舉出氫醌、對甲氧基苯酚、二第三丁基對甲酚、焦棓酚、第三丁基兒茶酚 、苯醌、4,4’-硫代雙(3-甲基-6-第三丁基苯酚)、2,2’-亞甲基雙(4-甲基-6-第三丁基苯酚)、N-亞硝基-N-苯基羥胺鋁鹽。 As the polymerization inhibitor, for example, hydroquinone, p-methoxyphenol, di-tert-butyl-p-cresol, pyrogallol, and tert-butylcatechol can be suitably used. , benzoquinone, 4,4'-thiobis(3-methyl-6-tert-butylphenol), 2,2'-methylenebis(4-methyl-6-tert-butylphenol) , N-nitroso-N-phenylhydroxylamine aluminum salt.

接著劑層前驅物具有聚合抑制劑時,聚合抑制劑之添加量,相對於接著劑層前驅物之全部固體成分,較佳為約0.01~約5質量%。 When the agent layer precursor has a polymerization inhibitor, the amount of the polymerization inhibitor added is preferably from about 0.01 to about 5 mass% based on the total solid content of the adhesive layer precursor.

聚合抑制劑係可為僅1種類,也可為2種類以上。於聚合抑制劑為2種類以上時,其合計較佳為上述範圍。 The polymerization inhibitor may be used in only one type or two or more types. When the polymerization inhibitor is two or more types, the total amount thereof is preferably in the above range.

<<高級脂肪酸衍生物等>> <<Advanced fatty acid derivatives, etc.>>

於本發明之接著劑層前驅物中,為了防止氧所造成的聚合阻礙,亦可添加山萮酸或如山萮酸醯胺之高級脂肪酸衍生物等,於塗布後之乾燥過程中使偏向存在於接著劑層前驅物之表面。 In the adhesive layer precursor of the present invention, in order to prevent polymerization inhibition by oxygen, behenic acid or a higher fatty acid derivative such as decyl behenate may be added to cause a bias in the drying process after coating. The surface of the precursor of the layer is then applied.

接著劑層前驅物具有高級脂肪酸衍生物時,高級脂肪酸衍生物之添加量,相對於接著劑層前驅物之全部固體成分,較佳為約0.1~約10質量%。 When the agent layer precursor has a higher fatty acid derivative, the amount of the higher fatty acid derivative added is preferably from about 0.1 to about 10% by mass based on the total solid content of the adhesive layer precursor.

高級脂肪酸衍生物等係可為僅1種類,也可為2種類以上。於高級脂肪酸衍生物等為2種類以上時,其合計較佳為上述範圍。 The higher fatty acid derivative or the like may be one type or two or more types. When two or more types of higher fatty acid derivatives are used, the total amount is preferably in the above range.

<<溶劑>> <<Solvent>>

藉由塗布本發明之接著劑層前驅物而成為層狀時,較佳為摻合溶劑。 When the precursor of the adhesive layer of the present invention is applied to form a layer, it is preferred to blend a solvent.

溶劑只要可形成接著性層,則可無限制地使用眾所周知者。 As long as the solvent can form an adhesive layer, a well-known person can be used without limitation.

作為有機溶劑,於酯類中,例如可合適地舉 出醋酸乙酯、醋酸正丁酯、醋酸異丁酯、甲酸戊酯、醋酸異戊酯、醋酸異丁酯、丙酸丁酯、丁酸異丙酯、丁酸乙酯、丁酸丁酯、乳酸甲酯、乳酸乙酯、氧基乙酸烷酯(例:氧基乙酸甲酯、氧基乙酸乙酯、氧基乙酸丁酯(例如甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯等))、3-氧基丙酸烷酯類(例:3-氧基丙酸甲酯、3-氧基丙酸乙酯等(例如3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯等))、2-氧基丙酸烷酯類(例:2-氧基丙酸甲酯、2-氧基丙酸乙酯、2-氧基丙酸丙酯等(例如2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯))、2-氧基-2-甲基丙酸甲酯及2-氧基-2-甲基丙酸乙酯(例如2-甲氧基-2-甲基丙酸甲酯、2-乙氧基-2-甲基丙酸乙酯等)、丙酮酸甲酯、丙酮酸乙酯、丙酮酸丙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、2-氧代丁烷酸甲酯、2-氧代丁烷酸乙酯等,以及於醚類中,例如可合適地舉出二乙二醇二甲基醚、四氫呋喃、乙二醇單甲基醚、乙二醇單乙基醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、二乙二醇單甲基醚、二乙二醇單乙基醚、二乙二醇單丁基醚、丙二醇單甲基醚、丙二醇單甲基醚乙酸酯、丙二醇單乙基醚乙酸酯、丙二醇單丙基醚乙酸酯等,以及於酮類中,例如可合適地舉出甲基乙基酮、環己酮、2-庚酮、3-庚酮、N-甲基-2-吡咯啶酮等等,以及於芳香族烴類中,例如可合適地舉出甲苯、二甲苯、茴香醚、檸檬烯等。 As an organic solvent, in an ester, for example, it can be suitably mentioned Ethyl acetate, n-butyl acetate, isobutyl acetate, amyl formate, isoamyl acetate, isobutyl acetate, butyl propionate, isopropyl butyrate, ethyl butyrate, butyl butyrate, Methyl lactate, ethyl lactate, alkyl oxyacetate (eg methyl oxyacetate, ethyl oxyacetate, butyl oxyacetate (eg methyl methoxyacetate, ethyl methoxyacetate, A) Butyl oxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, etc.), alkyl 3-oxopropionate (eg methyl 3-oxypropionate, 3-oxypropionic acid) Ethyl ester or the like (e.g., methyl 3-methoxypropionate, ethyl 3-methoxypropionate, methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, etc.), 2- Alkyl oxypropionates (for example: methyl 2-oxypropionate, ethyl 2-oxypropionate, propyl 2-oxypropionate, etc. (for example, methyl 2-methoxypropionate, 2 -ethyl methoxypropionate, propyl 2-methoxypropionate, methyl 2-ethoxypropionate, ethyl 2-ethoxypropionate), 2-oxy-2-methyl Methyl propionate and ethyl 2-oxy-2-methylpropionate (for example, methyl 2-methoxy-2-methylpropionate, ethyl 2-ethoxy-2-methylpropionate, etc. ), acetone , ethyl pyruvate, propyl pyruvate, methyl acetate methyl acetate, ethyl acetate, methyl 2-oxobutanoate, ethyl 2-oxobutanoate, etc., and in ethers, For example, diethylene glycol dimethyl ether, tetrahydrofuran, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate can be suitably used. , diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate Examples of the ester, propylene glycol monopropyl ether acetate, and the ketones include, for example, methyl ethyl ketone, cyclohexanone, 2-heptanone, 3-heptanone, and N-methyl-2. The pyrrolidone or the like, and the aromatic hydrocarbons, for example, toluene, xylene, anisole, limonene or the like can be suitably used.

此等之溶劑,從塗布面狀的改良等之觀點來看,混合2種以上之形態亦較佳。此時,特佳為由上述的3-乙氧基丙酸甲酯、3-乙氧基丙酸乙酯、乙基溶纖劑乙酸酯、乳酸乙酯、二乙二醇二甲基醚、醋酸丁酯、3-甲氧基丙酸甲酯、2-庚酮、環己酮、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇甲基醚及丙二醇甲基醚乙酸酯中選出的2種以上所構成之混合溶液。 The solvent is preferably a mixture of two or more kinds from the viewpoint of improvement in coating surface shape and the like. In this case, the above-mentioned methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, ethyl cellosolve acetate, ethyl lactate, diethylene glycol dimethyl ether , butyl acetate, methyl 3-methoxypropionate, 2-heptanone, cyclohexanone, ethyl carbitol acetate, butyl carbitol acetate, propylene glycol methyl ether and propylene glycol methyl A mixed solution of two or more selected from the group consisting of ether acetates.

接著劑層前驅物具有溶劑時,接著劑層前驅物形成用組成物中的溶劑之含量,從塗布性之觀點來看,較佳為使接著劑層前驅物形成用組成物的全部固體成分濃度成為5~80質量%之量,更佳為5~70質量%,特佳為10~60質量%。 When the solvent layer precursor has a solvent, the content of the solvent in the composition for forming the precursor layer precursor is preferably the total solid concentration of the composition for forming the precursor layer of the adhesive layer from the viewpoint of coatability. It is 5 to 80% by mass, more preferably 5 to 70% by mass, and particularly preferably 10 to 60% by mass.

溶劑係可為僅1種類,也可為2種類以上。於溶劑為2種類以上時,其合計較佳為上述範圍。 The solvent system may be only one type or two or more types. When the solvent is two or more types, the total amount thereof is preferably in the above range.

<<界面活性劑>> <<Interfacial active agent>>

於本發明之接著劑層前驅物中,從進一步提高塗布性之觀點來看,亦可添加各種的界面活性劑。作為界面活性劑,可使用氟系界面活性劑、非離子系界面活性劑、陽離子系界面活性劑、陰離子系界面活性劑、矽氧系界面活性劑等之各種界面活性劑。 In the adhesive layer precursor of the present invention, various surfactants may be added from the viewpoint of further improving coatability. As the surfactant, various surfactants such as a fluorine-based surfactant, a nonionic surfactant, a cationic surfactant, an anionic surfactant, and a ruthenium-based surfactant can be used.

特別地,藉由含有氟系界面活性劑,而進一步提高作為塗布液調製時的液特性(尤其流動性),故可進一步改善塗布厚度的均勻性或省液性。 In particular, by containing a fluorine-based surfactant, the liquid properties (especially fluidity) at the time of preparation as a coating liquid are further improved, so that uniformity of coating thickness or liquid-saving property can be further improved.

即,使用含有氟系界面活性劑的塗布液進行膜形成時,由於使被塗布面與塗布液之界面張力降低,而改善 對被塗布面的潤濕性,提高對被塗布面的塗布性。因此,於即使以少量之液量形成數μm左右的薄膜時,也更合適地進行厚度不均小的均勻厚度之膜形成之點係有效。 In other words, when the film formation is carried out using a coating liquid containing a fluorine-based surfactant, the interfacial tension between the surface to be coated and the coating liquid is lowered to improve. The wettability to the surface to be coated is improved to coat the surface to be coated. Therefore, even when a film having a thickness of about several μm is formed in a small amount of liquid, it is effective to form a film having a uniform thickness having a small thickness unevenness.

氟系界面活性劑中之氟含有率宜為3質量%~40質量%,更佳為5質量%~30質量%,特佳為7質量%~25質量%。氟含有率在此範圍內之氟系界面活性劑,係在塗布膜之厚度的均勻性或省液性之點有效果,溶解性亦良好。 The fluorine content in the fluorine-based surfactant is preferably from 3% by mass to 40% by mass, more preferably from 5% by mass to 30% by mass, even more preferably from 7% by mass to 25% by mass. The fluorine-based surfactant having a fluorine content within this range is effective in the uniformity of the thickness of the coating film or the liquid-saving property, and the solubility is also good.

作為氟系界面活性劑,例如可舉出Megafac F171、同F172、同F173、同F176、同F177、同F141、同F142、同F143、同F144、同R30、同F437、同F475、同F479、同F482、同F554、同F780、同F781(以上為DIC(股)製)、Fluorad FC430、同FC431、同FC171(以上為住友3M(股)製)、Surflon S-382、同SC-101、同SC-103、同SC-104、同SC-105、同SC1068、同SC-381、同SC-383、同S393、同KH-40(以上為旭硝子(股)製)、PF636、PF656、PF6320、PF6520、PF7002(OMNOVA公司製)等。 Examples of the fluorine-based surfactant include Megafac F171, F172, F173, F176, F177, F141, F142, F143, F144, R30, F437, F475, and F479. Same as F482, F554, F780, F781 (above DIC), Fluorad FC430, FC431, FC171 (above Sumitomo 3M), Surflon S-382, SC-101, Same as SC-103, same SC-104, same SC-105, same SC1068, same SC-381, same SC-383, same S393, same KH-40 (above is Asahi Glass Co., Ltd.), PF636, PF656, PF6320 PF6520, PF7002 (made by OMNOVA), etc.

作為非離子系界面活性劑,具體地可舉出甘油、三羥甲基丙烷、三羥甲基乙烷以及彼等之乙氧基化物及丙氧基化物(例如甘油丙氧基化物、甘油乙氧基化物等)、聚氧乙烯月桂基醚、聚氧乙烯硬脂基醚、聚氧乙烯油基醚、聚氧乙烯辛基苯基醚、聚氧乙烯壬基苯基醚、聚乙二醇二月桂酸酯、聚乙二醇二硬脂酸酯、山梨糖醇酐脂肪酸酯(BASF公司製之Pluronic L10、L31、L61、L62、10R5、17R2、25R2、Tetronic 304、701、704、901、 904、150R1、Solsperse 20000(日本LUBRIZOL(股)製)等。 Specific examples of the nonionic surfactant include glycerin, trimethylolpropane, trimethylolethane, and ethoxylates and propoxylates thereof (for example, glycerol propoxylate, glycerol B). Oxylate, etc.), polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octyl phenyl ether, polyoxyethylene nonylphenyl ether, polyethylene glycol Dilaurate, polyethylene glycol distearate, sorbitan fatty acid ester (Pluronic L10, L31, L61, L62, 10R5, 17R2, 25R2, Tetronic 304, 701, 704, 901 manufactured by BASF Corporation) , 904, 150R1, Solsperse 20000 (made by LUBRIZOL Co., Ltd., Japan).

作為陽離子系界面活性劑,具體地可舉出酞花青衍生物(商品名:EFKA-745,森下產業(股)製)、有機矽氧烷聚合物KP341(信越化學工業(股)製)、(甲基)丙烯酸系(共)聚合物Polyflow No.75、No.90、No.95(共榮社化學(股)製)、W001(裕商(股)製)等。 Specific examples of the cation-based surfactant include a phthalocyanine derivative (trade name: EFKA-745, manufactured by Morishita Sangyo Co., Ltd.), and an organic siloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.). (Meth)acrylic (co)polymers Polyflow No. 75, No. 90, No. 95 (manufactured by Kyoeisha Chemical Co., Ltd.), W001 (manufactured by Yusei Co., Ltd.), and the like.

作為陰離子系界面活性劑,具體地可舉出W004、W005、W017(裕商(股)製)等。 Specific examples of the anionic surfactant include W004, W005, and W017 (manufactured by Yusei Co., Ltd.).

作為矽氧系界面活性劑,例如可舉出Toray Dow Corning(股)製「Toray Silicone DC3PA」、「Toray Silicone SH7PA」、「Toray Silicone DC11PA」、「Toray Silicone SH21PA」、「Toray Silicone SH28PA」、「Toray Silicone SH29PA」、「Toray Silicone SH30PA」、「Toray Silicone SH8400」、Momentive Performance Materials公司製「TSF-4440」、「TSF-4300」、「TSF-4445」、「TSF-4460」、「TSF-4452」、信越SILICONE股份有限公司製「KP341」、「KF6001」、「KF6002」、BYK化學公司製「BYK307」、「BYK323」、「BYK330」等。 Examples of the oxime-based surfactant include Toray Silicone DC3PA, Toray Silicone SH7PA, Toray Silicone DC11PA, Toray Silicone SH21PA, Toray Silicone SH28PA, and Toray Dow Corning. Toray Silicone SH29PA, "Toray Silicone SH30PA", "Toray Silicone SH8400", "TSF-4440", "TSF-4300", "TSF-4445", "TSF-4460", "TSF-4452" by Momentive Performance Materials "KP341", "KF6001", "KF6002" manufactured by Shin-Etsu SILICONE Co., Ltd., "BYK307", "BYK323", "BYK330" manufactured by BYK Chemical Co., Ltd., etc.

接著劑層前驅物具有界面活性劑時,界面活性劑之添加量,相對於接著劑層前驅物之全部固體成分,較佳為0.001質量%~2.0質量%,更佳為0.005質量%~1.0質量%。 When the agent layer precursor has a surfactant, the amount of the surfactant added is preferably 0.001% by mass to 2.0% by mass, more preferably 0.005% by mass to 1.0% by mass based on the total solid content of the adhesive layer precursor. %.

界面活性劑係可為僅1種類,也可為2種類以上。於界面活性劑為2種類以上時,其合計較佳為上述範圍。 The surfactant may be used in only one type or two or more types. When the amount of the surfactant is two or more, the total amount is preferably in the above range.

<<其它添加劑>> <<Other additives>>

本發明中之接著劑層前驅物,在不損害本發明的效果之範圍內,視需要可摻合各種添加物,例如硬化劑、硬化觸媒、矽烷偶合劑、填充劑、密接促進劑、抗氧化劑、紫外線吸收劑、防凝聚劑等。當摻合此等添加劑時,其合計摻合量較佳為接著劑層前驅物之固體成分的3質量%以下。 The adhesive layer precursor of the present invention may be blended with various additives such as a hardener, a hardening catalyst, a decane coupling agent, a filler, a adhesion promoter, and the like, as long as the effects of the present invention are not impaired. An oxidizing agent, an ultraviolet absorber, an anti-agglomerating agent, and the like. When these additives are blended, the total blending amount thereof is preferably 3% by mass or less based on the solid content of the binder layer precursor.

為了形成接著劑層前驅物或接著劑層,可藉由將接著劑層前驅物形成用組成物(例如,接著劑層前驅物塗布液),使用習知的旋塗法、噴霧法、輥塗法、流塗法、刮刀塗布法、浸漬法等塗布,其次進行乾燥(烘烤)而形成。乾燥例如可在60~150℃進行10秒~2分鐘。 In order to form an adhesive layer precursor or an adhesive layer, a composition for forming an adhesive layer precursor precursor (for example, an adhesive layer precursor coating liquid) can be used by a conventional spin coating method, a spray method, or a roll coating method. Coating by a method such as a flow coating method, a knife coating method, or a dipping method is carried out by drying (baking). Drying can be carried out, for example, at 60 to 150 ° C for 10 seconds to 2 minutes.

接著劑層前驅物及接著劑層之厚度係各自較佳為1~500μm,更佳為1~100μm,尤佳為1~10μm。 The thickness of the layer precursor and the adhesive layer is preferably from 1 to 500 μm, more preferably from 1 to 100 μm, still more preferably from 1 to 10 μm.

接著劑層前驅物在25℃的儲存彈性模數較佳為1M~10GPa,更佳為10M~10GPa,尤佳為100M~10GPa。彈性模數例如可藉由黏彈性測定裝置Rheosol-G1000(UBM公司製)測定。藉由成為如此的彈性模數,更且藉由使保護層成為如後述的彈性模數,可更有效果地抑制研磨裝置時所產生的凹凸,可使後述的裝置晶圓之薄型化時的強接著性與裝置晶圓之分離時的易剝離性更有效果地並存。 The storage elastic modulus of the precursor of the layer at 25 ° C is preferably 1 M to 10 GPa, more preferably 10 M to 10 GPa, and particularly preferably 100 M to 10 GPa. The elastic modulus can be measured, for example, by a viscoelasticity measuring device Rheosol-G1000 (manufactured by UBM). By using such a modulus of elasticity, and by making the protective layer have an elastic modulus as will be described later, it is possible to more effectively suppress irregularities generated in the polishing apparatus, and it is possible to reduce the thickness of the device wafer to be described later. The strong adhesion is more effective in coexistence with the easy peeling of the device wafer.

<(A)支撐體> <(A) Support>

本發明之積層體具有(A)支撐體(亦稱為載體基板)。 The laminate of the present invention has (A) a support (also referred to as a carrier substrate).

支撐體之材料係沒有特別的限定,例如可舉出矽基 板、玻璃基板、金屬基板等,若鑒於不易污染作為半導體裝置之基板所代表地使用之矽基板之點,或可使用半導體裝置之製程中所通用的靜電吸盤之點等,則較佳為矽基板。 The material of the support is not particularly limited, and for example, a sulfhydryl group may be mentioned. In the case of a board, a glass substrate, a metal substrate, or the like, it is preferable that the point of the substrate to be used as a substrate of the semiconductor device is not easily contaminated, or the point of the electrostatic chuck commonly used in the process of the semiconductor device can be used. Substrate.

支撐體之厚度例如為300μm~5mm之範圍內,但沒有特別的限定。 The thickness of the support is, for example, in the range of 300 μm to 5 mm, but is not particularly limited.

<(C)保護層> <(C) protective layer>

本發明之積層體具有(C)保護層。藉由設置保護層,可抑制研磨時的凹凸。 The laminate of the present invention has a (C) protective layer. By providing a protective layer, irregularities during polishing can be suppressed.

保護層係可無限制地使用眾所周知者,但較佳為可確實地保護後述之裝置晶片者。 The protective layer can be used without any limitation, but it is preferable to reliably protect the device wafer described later.

作為構成保護層之材料,只要是保護被處理基材之目的,則可無限制地使用眾所周知的化合物。具體地,可較佳地使用酚樹脂、環氧樹脂、三聚氰胺樹脂、尿素樹脂、不飽和聚酯樹脂、醇酸樹脂、聚胺基甲酸酯、聚醯亞胺、聚乙烯、聚丙烯、聚氯乙烯、聚苯乙烯、聚醋酸乙烯酯、Teflon(註冊商標)、ABS樹脂、AS樹脂、丙烯酸樹脂、聚醯胺、聚縮醛、聚碳酸酯、聚苯醚、聚對苯二甲酸丁二酯、聚對苯二甲酸乙二酯、環狀聚烯烴、聚苯硫、聚碸、聚醚碸、聚芳酯、聚醚醚酮、聚醯胺醯亞胺等之合成樹脂、或松香、天然橡膠等之天然樹脂、烴樹脂。作為市售品,可較佳地使用ZEONEX 480R(日本ZEON(股)製)等。構成保護層之材料係可為僅1種類,也可為2種類以上。 As the material constituting the protective layer, a well-known compound can be used without limitation for the purpose of protecting the substrate to be treated. Specifically, a phenol resin, an epoxy resin, a melamine resin, a urea resin, an unsaturated polyester resin, an alkyd resin, a polyurethane, a polyimide, a polyethylene, a polypropylene, a poly Vinyl chloride, polystyrene, polyvinyl acetate, Teflon (registered trademark), ABS resin, AS resin, acrylic resin, polyamide, polyacetal, polycarbonate, polyphenylene ether, polybutylene terephthalate a synthetic resin such as ester, polyethylene terephthalate, cyclic polyolefin, polyphenylene sulfide, polyfluorene, polyether oxime, polyarylate, polyetheretherketone, polyamidoximine, or rosin, Natural resin such as natural rubber, hydrocarbon resin. As a commercial item, ZEONEX 480R (made by Japan ZEON Co., Ltd.) etc. can be used preferably. The material constituting the protective layer may be only one type or two or more types.

保護層之軟化點較佳為170℃以上250℃以下 ,更佳為200℃以上250℃以下。軟化點為170℃以上250℃以下的聚醚碸樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、烴樹脂及聚醚醚酮樹脂係更佳,軟化點為170℃以上250℃以下的聚醚碸樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂及聚醚醚酮樹脂係最佳。 The softening point of the protective layer is preferably 170 ° C or more and 250 ° C or less. More preferably, it is 200 ° C or more and 250 ° C or less. A polyether oxime resin, a polycarbonate resin, a polystyrene resin, a hydrocarbon resin, and a polyetheretherketone resin having a softening point of 170 ° C or more and 250 ° C or less is more preferable, and a polyether oxime having a softening point of 170 ° C or more and 250 ° C or less is preferable. Resins, polycarbonate resins, polystyrene resins, and polyetheretherketone resins are preferred.

保護層之軟化點較佳為比接著劑層前驅物及接著劑層之軟化點還低。保護層之軟化點比接著劑層前驅物之軟化點低時,有保護層之洗淨性升高之傾向。保護層之軟化點與接著劑層前驅物之軟化點之差,較佳為10℃~200℃,更佳為30℃~200℃。 The softening point of the protective layer is preferably lower than the softening point of the adhesive layer precursor and the adhesive layer. When the softening point of the protective layer is lower than the softening point of the adhesive of the adhesive layer, the detergency of the protective layer tends to increase. The difference between the softening point of the protective layer and the softening point of the precursor of the adhesive layer is preferably from 10 ° C to 200 ° C, more preferably from 30 ° C to 200 ° C.

又,保護層係在不損害本發明的效果之範圍內,視需要可含有上述接著劑層前驅物中可含有之化合物。 Further, the protective layer may contain a compound which may be contained in the above-mentioned adhesive layer precursor, as long as the effects of the present invention are not impaired.

為了形成保護層,可藉由將保護層形成用組成物(保護層塗布液),使用習知的旋塗法、噴霧法、輥塗法、流塗法、刮刀塗布法、浸漬法等塗布,其次進行乾燥(烘烤)而形成。乾燥例如可在60~150℃進行10秒~2分鐘。保護層塗布液較佳為包含上述樹脂及溶劑。 In order to form a protective layer, the composition for forming a protective layer (protective layer coating liquid) can be applied by a conventional spin coating method, a spray method, a roll coating method, a flow coating method, a knife coating method, a dipping method, or the like. Next, it is formed by drying (baking). Drying can be carried out, for example, at 60 to 150 ° C for 10 seconds to 2 minutes. The protective layer coating liquid preferably contains the above resin and solvent.

保護層之厚度較佳為1~300μm,更佳為10~200μm,尤佳為20~150μm。於裝置晶圓表面上具有構造體時,較佳為超過構造體之厚度。 The thickness of the protective layer is preferably from 1 to 300 μm, more preferably from 10 to 200 μm, still more preferably from 20 to 150 μm. When there is a structure on the surface of the device wafer, it preferably exceeds the thickness of the structure.

保護層在25℃的儲存彈性模數較佳為10M~1GPa,更佳為100M~5GPa,尤佳為1000M~3GPa。 The storage elastic modulus of the protective layer at 25 ° C is preferably 10 M to 1 GPa, more preferably 100 M to 5 GPa, and particularly preferably 1000 M to 3 GPa.

保護層之儲存彈性模數較佳為比接著層前驅物之儲存彈性模數還低,[保護層之儲存彈性模數]/[接著層前驅 物之儲存彈性模數]之值較佳為0.9~0.01,更佳為0.8~0.05,最佳為0.5~0.1。 The storage elastic modulus of the protective layer is preferably lower than the storage elastic modulus of the adhesive layer precursor, [storage elastic modulus of the protective layer] / [adhesive layer precursor The value of the storage elastic modulus of the material is preferably from 0.9 to 0.01, more preferably from 0.8 to 0.05, most preferably from 0.5 to 0.1.

本發明之保護層較佳為包含具有氟原子之非聚合性的高分子化合物。再者,具有氟原子之非聚合性的高分子化合物之較佳態樣,係與前述接著劑層前驅物中所含有的具有氟原子之非聚合性的高分子化合物中記載者同樣,較佳的範圍亦同樣。 The protective layer of the present invention is preferably a polymer compound containing a non-polymerizable fluorine atom. In addition, a preferred embodiment of the non-polymerizable polymer compound having a fluorine atom is preferably the same as those described for the non-polymerizable polymer compound having a fluorine atom contained in the precursor of the adhesive layer. The scope is the same.

非聚合性之具有氟原子的高分子化合物之含量,從良好的剝離性之觀點來看,相對於上述保護層及全部固體成分,較佳為0.01~99質量%,更佳為0.03~50質量%,尤佳為0.05~10質量%。 The content of the polymer compound having a fluorine atom which is not polymerizable is preferably 0.01 to 99% by mass, more preferably 0.03 to 50% by mass from the viewpoint of good releasability, with respect to the protective layer and all solid components. %, especially preferably 0.05 to 10% by mass.

具有氟原子之非聚合性的高分子化合物,於接著劑層前驅物中含有具有氟原子的自由基聚合性化合物時,尤其剝離性之提高效果大,以具有氟原子的自由基聚合性化合物與具有氟原子之非聚合性的高分子化合物之組合而使用者為最佳。 When a polymerizable compound having a fluorine atom and a polymerizable compound having a fluorine atom is contained in the precursor of the adhesive layer, the effect of improving the releasability is large, and a radically polymerizable compound having a fluorine atom and It is preferred that the user has a combination of a non-polymerizable polymer compound having a fluorine atom.

具有氟原子之非聚合性的高分子化合物,較佳為包含於保護層或接著劑層前驅物之至少任一層中,亦可包含於兩層中。從剝離性之觀點來看,較佳為包含於保護層或接著劑層前驅物之任一層中,為了形成本發明之軟化點為250℃以上的接著劑層,最佳為包含於保護層中。 The non-polymerizable polymer compound having a fluorine atom is preferably contained in at least one of the protective layer or the adhesive layer precursor, or may be contained in both layers. From the viewpoint of the releasability, it is preferably contained in any one of the protective layer or the adhesive layer precursor, and in order to form the adhesive layer having a softening point of 250 ° C or more in the present invention, it is preferably contained in the protective layer. .

於本發明中,接著劑層前驅物中之具有氟原子的自由基聚合性化合物與保護層中之非聚合性之具有氟原子的高分子化合物之比(質量比),較佳為5:95~95:5 ,更佳為10:90~90:10,特佳為15:85~30:70。 In the present invention, the ratio (mass ratio) of the radical polymerizable compound having a fluorine atom in the precursor of the adhesive layer to the polymer compound having a fluorine atom in the protective layer is preferably 5:95. ~95:5 More preferably, it is 10:90~90:10, and the best is 15:85~30:70.

<(D)裝置晶圓> <(D) device wafer>

本發明之積層體具有(D)裝置晶圓。 The laminate of the present invention has (D) device wafers.

裝置晶圓係可無限制地使用眾所周知者,例如可舉出MEMS、感測器用裝置等。 The device wafer can be used without any limitation, and examples thereof include a MEMS, a sensor device, and the like.

裝置晶圓較佳為在表面上具有構造體,構造體較佳為高度1μm以上150μm以下之構造體,較佳為具有高度1μm以上150μm以下之金屬構造體(亦稱為金屬凸塊)。構造體之高度較佳為5~100μm。 The device wafer preferably has a structure on the surface, and the structure is preferably a structure having a height of 1 μm or more and 150 μm or less, and preferably a metal structure (also referred to as a metal bump) having a height of 1 μm or more and 150 μm or less. The height of the structure is preferably 5 to 100 μm.

裝置晶圓較佳為具有500μm以上之膜厚,更佳為600μm以上,尤佳為700μm以上。 The device wafer preferably has a film thickness of 500 μm or more, more preferably 600 μm or more, and particularly preferably 700 μm or more.

詳細係如後述,裝置晶圓係在與保護層相接之面的相反面,施予機械或化學處理,較佳為薄化至小於500μm的膜厚。更佳的膜厚為400μm以下,尤佳的膜厚為300μm以下。 As will be described later, the device wafer is mechanically or chemically treated on the opposite side of the surface in contact with the protective layer, and is preferably thinned to a film thickness of less than 500 μm. A more preferable film thickness is 400 μm or less, and a film thickness is particularly preferably 300 μm or less.

套組:本發明關於一種套組,其包含:含有樹脂與溶劑的保護層形成用組成物;及,含有溶劑與聚合性單體的接著劑層前驅物或接著劑層形成用組成物。 The kit of the present invention relates to a kit comprising: a composition for forming a protective layer containing a resin and a solvent; and a composition for forming an adhesive layer or a layer for forming an adhesive layer containing a solvent and a polymerizable monomer.

藉由將接著劑層前驅物形成用組成物塗布於支撐體上,形成接著劑層前驅物後,塗布保護層形成用組成物,可製作本發明之積層體。又,保護層形成用組成物亦可塗布於裝置上而硬化。 The laminate for forming an adhesive layer precursor is applied onto a support to form an adhesive layer precursor, and then a composition for forming a protective layer is applied, whereby the laminate of the present invention can be produced. Further, the protective layer forming composition may be applied to the device to be cured.

接著劑層前驅物或接著劑層形成用組成物及保護層形成用組成物之各自的組成、較佳的範圍等,係與上述 接著劑層前驅物及保護層之項目下說明者同樣。 The composition of each of the composition layer precursor or the adhesive layer forming composition and the protective layer forming composition, a preferred range, and the like are as described above. The same is true for the following description of the agent layer precursor and the protective layer.

積層體之製作方法、半導體裝置之製造方法:半導體的製造裝置之製造方法之特徵為具有:透過本發明之保護層及接著劑層前驅物,接著被處理構件的第1面與基板之步驟;對於上述被處理構件之與上述第1面相反側的第2面,施予機械或化學處理,而得到處理過構件之步驟;及,分離上述接著劑層前驅物或接著劑層前驅物的硬化物(接著劑層)與上述處理過構件之步驟。 A method for producing a laminate; and a method for producing a semiconductor device: a method for producing a semiconductor device, comprising: a step of transmitting a protective layer and an adhesive layer precursor of the present invention, and then a first surface of the member to be processed; and a substrate; a step of mechanically or chemically treating the second surface opposite to the first surface of the member to be treated to obtain a treated member; and separating the precursor of the adhesive layer precursor or the adhesive layer precursor The step of treating the member (the adhesive layer) with the above-mentioned treated member.

又,半導體裝置之製造方法較佳為:於透過保護層及接著劑層前驅物,接著被處理構件的第1面與基板之步驟之後,且在對於上述被處理構件之與上述第1面相反側的第2面,施予機械或化學處理,得到處理過構件之步驟之前,更具有將上述接著劑層前驅物以150℃~300℃之溫度加熱之步驟。特別地,本發明之積層體係適合在250℃以上的使用環境下之使用。 Moreover, it is preferable that the method of manufacturing the semiconductor device is such that after the step of transmitting the protective layer and the adhesive layer precursor, the first surface of the member to be processed and the substrate, and the first surface opposite to the member to be processed The second surface of the side is subjected to a mechanical or chemical treatment to obtain a treated member, and further has a step of heating the precursor layer precursor at a temperature of from 150 ° C to 300 ° C. In particular, the laminate system of the present invention is suitable for use in a use environment of 250 ° C or higher.

另外,本發明之積層體之特徵為在(A)支撐體上依順序具有(B2)接著劑層、(C)保護層、(D)裝置晶圓。如此的積層體係可藉由使具有(B)接著劑層前驅物的(A)支撐體與具有(C)保護層的(D)裝置晶圓接著之方法而製作。 Further, the laminate of the present invention is characterized in that (B2) an adhesive layer, (C) a protective layer, and (D) device wafer are sequentially provided on the (A) support. Such a layered system can be produced by a method in which the (A) support having the (B) adhesive layer precursor and the (D) device wafer having the (C) protective layer are followed.

接著劑層前驅物係藉由對接著劑層前驅物形成用組成物照射活性光線或放射線或熱之步驟,而將接著劑層前驅物形成用組成物中的聚合性單體及/或聚合性寡聚物之聚合率調節至10~70%,轉換成接著劑層前驅物。 此時,加熱溫度較佳為50℃~220℃,更佳為100~210℃,尤佳為160~200℃。 The polymer layer precursor is a polymerizable monomer and/or polymerizable property in the composition for forming an adhesive layer precursor by irradiating active light rays or radiation or heat to the composition for forming a precursor layer of the adhesive layer. The polymerization rate of the oligomer is adjusted to 10 to 70%, and is converted into an adhesive layer precursor. At this time, the heating temperature is preferably from 50 ° C to 220 ° C, more preferably from 100 to 210 ° C, and particularly preferably from 160 to 200 ° C.

又,於形成本發明之積層體之後,更藉由照射活性光線或放射線或熱之步驟,而將接著劑層前驅物中的聚合性單體及/或聚合性寡聚物之聚合率調節至50~100%,成為接著劑層,而可提高接著性與易剝離性。此時,加熱溫度較佳為150℃~300℃,更佳為170~250℃,尤佳為180~220℃。 Further, after forming the laminate of the present invention, the polymerization rate of the polymerizable monomer and/or the polymerizable oligomer in the adhesive layer precursor is adjusted to a step of irradiating active light or radiation or heat to 50 to 100%, which becomes an adhesive layer, and improves adhesion and easy peelability. At this time, the heating temperature is preferably from 150 ° C to 300 ° C, more preferably from 170 to 250 ° C, and particularly preferably from 180 to 220 ° C.

以下,說明此等之詳細,惟本發明之積層體之製作方法、半導體裝置之製造方法係不受以下所限定。 Hereinafter, the details of the above-described layers, the method for producing the laminated body of the present invention, and the method for producing the semiconductor device are not limited to the following.

第1圖(A)、第1圖(B)、第1圖(C)、第1圖(D)、第1圖(E)、第1圖(F)各自係說明接著性支撐體與裝置晶圓的暫時接著之示意截面圖,顯示暫時接著於接著性支撐體的裝置晶圓經薄型化之狀態、剝離接著性支撐體與裝置晶圓之狀態、及接著性支撐體與裝置晶圓的表面洗淨後之狀態之示意截面圖。 Fig. 1 (A), Fig. 1 (B), Fig. 1 (C), Fig. 1 (D), Fig. 1 (E), and Fig. 1 (F) each illustrate an adhesive support and device A schematic cross-sectional view of the wafer temporarily showing a state in which the device wafer temporarily attached to the adhesive support is thinned, a state in which the adhesive support and the device wafer are peeled off, and an adhesive support and device wafer A schematic cross-sectional view of the state after the surface is washed.

於本發明之實施形態中,如第1圖(A)所示,首先準備在支撐體12之上設置接著性層前驅物11而成之接著性支撐體前驅物100。 In the embodiment of the present invention, as shown in FIG. 1(A), first, the adhesive support precursor 100 in which the adhesive layer precursor 11 is provided on the support 12 is prepared.

接著性支撐體前驅物100包含聚合性單體及/或聚合性寡聚物。 The subsequent support precursor 100 contains a polymerizable monomer and/or a polymerizable oligomer.

接著性層前驅物形成用組成物11係如第1圖(B)所示,藉由照射活性光線或放射線或熱之步驟,將聚合性單體之聚合率調節至10~70%,而成為接著劑層前 驅物13。又,接著劑層前驅物在25℃的儲存彈性模數,較佳為10MPA以上且小於1GPa。由於調節至此範圍內,可使後述的裝置晶圓之薄型化時的強接著性與裝置晶圓之分離時的易剝離性並存。 As shown in FIG. 1(B), the composition for forming a precursor layer of the precursor layer is adjusted to a polymerization rate of 10 to 70% by irradiation of active light or radiation or heat. Before the agent layer Drive 13 Further, the storage layer precursor has a storage elastic modulus at 25 ° C, preferably 10 MPA or more and less than 1 GPa. When the adjustment is within this range, the strong adhesion at the time of thinning the device wafer to be described later and the easy peelability at the time of separation of the device wafer can coexist.

單體之聚合率係可調節光引發劑、熱引發劑的含量、或活性光線或放射線或熱之能量而控制。 The polymerization rate of the monomer is controlled by adjusting the amount of the photoinitiator, the amount of the thermal initiator, or the energy of the active light or radiation or heat.

單體之聚合率係可使用傅立葉轉換型紅外分光法(FT-IR),測定在820-800cm-1附近的σ=CH(乙烯基CH之面外變角振動帶)之波峰面積,將照射活性光線或放射線或熱之前的狀態之波峰面積當作0%,將波峰完全消失的狀態當作100%而算出。作為傅立葉轉換型紅外分光計,例如可使用DIGILAB公司製EXCALIBUR FTS-3000。 The polymerization rate of the monomer can be measured by Fourier transform infrared spectroscopy (FT-IR), and the peak area of σ = CH (the surface vibration angle of the vinyl CH) at 820-800 cm -1 is measured. The peak area of the state before the active light or the radiation or the heat is regarded as 0%, and the state in which the peak completely disappears is calculated as 100%. As the Fourier transform type infrared spectrometer, for example, EXCALIBUR FTS-3000 manufactured by DIGILAB Co., Ltd. can be used.

於支撐體12上設置後述的保護層時,可應用於(較佳為塗布)保護層之表面,其次藉由乾燥(烘烤)而形成。乾燥例如可在60~150℃進行10秒~2分鐘。 When a protective layer to be described later is provided on the support 12, it can be applied to (preferably, apply) the surface of the protective layer, and secondarily by drying (baking). Drying can be carried out, for example, at 60 to 150 ° C for 10 seconds to 2 minutes.

其次,詳細說明具有支撐體與接著劑層前驅物的接著性支撐體100’、與具有保護層的裝置晶圓60(被處理構件)之暫時接著、裝置晶圓之薄型化、及接著性支撐體與裝置晶圓之分離。 Next, the adhesive support 100' having the support and the adhesive layer precursor, the temporary connection with the device wafer 60 (the processed member) having the protective layer, the thinning of the device wafer, and the subsequent support will be described in detail. The separation of the body from the device wafer.

如第1圖(B)中所示,裝置晶圓60(被處理構件)係在矽基板61的表面61a上設置複數的構造體(裝置晶片)62所成。 As shown in FIG. 1(B), the device wafer 60 (processed member) is formed by providing a plurality of structures (device wafers) 62 on the surface 61a of the ruthenium substrate 61.

此處,矽基板61之厚度例如為200~1200μm之範圍內。裝置晶片62例如金屬構造體係較佳的高度為10~100μm之範圍內。 Here, the thickness of the ruthenium substrate 61 is, for example, in the range of 200 to 1200 μm. The device wafer 62, for example, a metal structure, preferably has a height in the range of 10 to 100 μm.

於表面61a上設置保護層71時,可在保護層之表面上應用(較佳為塗布),其次藉由乾燥(烘烤)而形成。乾燥例如可在60~150℃進行10秒~2分鐘。保護層71較佳為完全地覆蓋裝置晶片62,當裝置晶片之高度為Xμm,保護層之厚度為Yμm時,較佳為以X+100≧Y>X之式表示。 When the protective layer 71 is provided on the surface 61a, it can be applied on the surface of the protective layer (preferably coating), and secondarily by drying (baking). Drying can be carried out, for example, at 60 to 150 ° C for 10 seconds to 2 minutes. The protective layer 71 preferably completely covers the device wafer 62. When the height of the device wafer is X μm and the thickness of the protective layer is Y μm, it is preferably expressed by X + 100 ≧ Y > X.

如此地,保護層71完全地被覆裝置晶片62者,係有效於將經由接著性支撐體100’所暫時接著的裝置晶圓60予以薄型化而得之薄型裝置晶圓的TTV(Total Thickness Variation)進一步降低之情況(即,欲進一步提高薄型裝置晶圓的平坦性之情況)。 In this manner, the protective layer 71 completely covers the device wafer 62, and is effective for thinning the device wafer 60 temporarily attached via the adhesive support 100' to obtain a TTV (Total Thickness Variation) of the thin device wafer. Further reductions (ie, situations where the flatness of the thin device wafer is to be further improved).

即,於將經由接著性支撐體100所暫時接著之裝置晶圓60予以薄型化之情況中,複數的裝置晶片62所形成之裝置晶圓60的凹凸形狀係有轉印至薄型裝置晶圓60’的背面61b’之傾向,可能成為TTV變大的主要因素。 That is, in the case where the device wafer 60 temporarily attached via the adhesive support 100 is thinned, the uneven shape of the device wafer 60 formed by the plurality of device wafers 62 is transferred to the thin device wafer 60. The tendency of 'back 61b' may become a major factor in the increase of TTV.

另一方面,於將經由接著性支撐體100’所暫時接著之附保護層的裝置晶圓予以薄型化之情況中,首先由於藉由保護層保護複數的裝置晶片62,於附保護層的裝置晶圓之與接著性支撐體100’的接觸面中,可幾乎無凹凸形狀。因此,即使將如此之附保護層的裝置晶圓於經由接著性支撐體100’支撐之狀態下予以薄型化,也可減低將源自複數的裝置晶片62之形狀轉印至附保護層的薄型裝置晶圓之背面61b之虞,結果可進一步減低最終所得之薄型裝置晶圓的TTV。 On the other hand, in the case where the device wafer to which the protective layer is temporarily attached via the adhesive support 100' is thinned, first, the device is attached to the protective layer by protecting the plurality of device wafers 62 by the protective layer. In the contact surface of the wafer with the adhesive support 100', there is almost no uneven shape. Therefore, even if the device wafer having such a protective layer is thinned in a state of being supported by the adhesive support 100', the shape of transferring the device wafer 62 derived from the plurality to the protective layer can be reduced. After the back side 61b of the device wafer, the TTV of the resulting thin device wafer can be further reduced.

繼續,如第1圖(C)中所示,於表面61a上設有 保護層71之情況,然後對於接著性支撐體100’之接著劑層前驅物13,按壓保護層71。藉此,保護層71與接著劑層前驅物13係接著,接著性支撐體100’與裝置晶圓60係暫時接著。 Continuing, as shown in FIG. 1(C), provided on the surface 61a In the case of the protective layer 71, the protective layer 71 is then pressed against the adhesive layer precursor 13 of the adhesive support 100'. Thereby, the protective layer 71 and the adhesive layer precursor 13 are followed by the adhesive support 100' and the device wafer 60 are temporarily followed.

而且之後,按照需要,亦可將接著性支撐體100’與裝置晶圓60之接著體予以加熱(照射熱),而使接著性層前驅物之接著性成為更強韌之接著劑層。藉此,由於可促進在接著性支撐體與被處理構件之界面的錨固效果,同時抑制在施予裝置晶圓60的後述之機械或化學處理時等所容易發生的接著性層之內聚破壞,故提高接著性支撐體100’之接著性,由於接著性層的彈性模數更升高而亦可提高裝置晶圓的分離時之易剝離性。 Then, if necessary, the adhesive body of the adhesive support 100' and the device wafer 60 may be heated (irradiation heat) to make the adhesion of the adhesive layer precursor a stronger adhesive layer. Thereby, the anchoring effect at the interface between the adhesive support and the member to be processed can be promoted, and the cohesive failure of the adhesive layer which is likely to occur at the time of mechanical or chemical treatment to be described later of the donor wafer 60 can be suppressed. Therefore, the adhesion of the adhesive support 100' is improved, and the peeling property at the time of separation of the device wafer can be improved because the elastic modulus of the adhesive layer is further increased.

此時的加熱溫度較佳為150℃~300℃,更佳為170℃~250℃,尤佳為180℃~220℃。 The heating temperature at this time is preferably from 150 ° C to 300 ° C, more preferably from 170 ° C to 250 ° C, and particularly preferably from 180 ° C to 220 ° C.

此時的加熱時間較佳為20秒~10分鐘,更佳為30秒~5分鐘,尤佳為40秒~3分鐘。 The heating time at this time is preferably from 20 seconds to 10 minutes, more preferably from 30 seconds to 5 minutes, and particularly preferably from 40 seconds to 3 minutes.

其次,如第1圖(D)中所示,對於矽基板61之背面61b,藉由施予機械或化學處理,具體地滑動或化學機械研磨(CMP)等之薄膜化處理,將矽基板61之厚度減薄(例如成為厚度1~200μm),得到薄型裝置晶圓60’。 Next, as shown in FIG. 1(D), the back surface 61b of the ruthenium substrate 61 is subjected to mechanical or chemical treatment, specifically, thin film processing such as sliding or chemical mechanical polishing (CMP), and the ruthenium substrate 61 is used. The thickness is reduced (for example, to a thickness of 1 to 200 μm) to obtain a thin device wafer 60'.

又,作為機械或化學處理,於薄膜化處理之後,形成自薄型裝置晶圓60’的背面61b’貫穿矽基板之貫通孔(未圖示),視需要亦可進行在此貫通孔內形成矽貫通電極(未圖示)之處理。 Further, as a mechanical or chemical treatment, after the thinning treatment, a through hole (not shown) penetrating the back surface 61b' of the thin device wafer 60' is formed, and if necessary, a through hole may be formed in the through hole. The treatment of the through electrode (not shown).

其次,如第1圖(E)中所示,自接著性支撐體 100’之接著劑層脫離薄型裝置晶圓60’之表面61a。 Next, as shown in Figure 1 (E), the self-adhesive support The 100' adhesive layer is detached from the surface 61a of the thin device wafer 60'.

脫離之方法係沒有特別的限定,但較佳為沒有任何處理,自薄型裝置晶圓60’之端部,在相對於裝置晶圓呈垂直的方向中往上拉而剝離。 The method of detachment is not particularly limited, but it is preferable that the end portion of the thin device wafer 60' is pulled up and peeled off in a direction perpendicular to the device wafer, without any treatment.

<剝離液> <Peeling liquid>

以下,詳細說明剝離液。 Hereinafter, the peeling liquid will be described in detail.

作為剝離液,可使用水及溶劑(有機溶劑)。又,作為剝離液,較佳為溶解保護層71之有機溶劑。作為有機溶劑,例如可舉出脂肪族烴類(己烷、庚烷、Isopar E、H、G(ESSO化學(股)製)等)、芳香族烴類(甲苯、二甲苯等)、鹵化烴(二氯甲烷、二氯乙烷、三氯乙烯、單氯苯等)、極性溶劑。作為極性溶劑,可舉出醇類(甲醇、乙醇、丙醇、異丙醇、1-丁醇、1-戊醇、1-己醇、1-庚醇、1-辛醇、2-辛醇、2-乙基-1-己醇、1-壬醇、1-癸醇、苯甲醇、乙二醇單甲基醚、2-乙氧基乙醇、二乙二醇單乙基醚、二乙二醇單己基醚、三乙二醇單甲基醚、丙二醇單乙基醚、丙二醇單甲基醚、聚乙二醇單甲基醚、聚丙二醇、四乙二醇、乙二醇單丁基醚、乙二醇單苄基醚、乙二醇單苯基醚、丙二醇單苯基醚、甲基苯基卡必醇、正戊醇、甲基戊醇等)、酮類(丙酮、甲基乙基酮、乙基丁基酮、甲基異丁基酮、環己酮等)、酯類(醋酸乙酯、醋酸丙酯、醋酸丁酯、醋酸戊酯、醋酸苄酯、乳酸甲酯、乳酸丁酯、乙二醇單丁基乙酸酯、丙二醇單甲基醚乙酸酯、二乙二醇乙酸酯、苯二甲酸二乙酯、乙醯丙酸丁酯等)、其它(磷酸三乙酯、磷酸三甲苯酯、N-苯基乙醇 胺、N-苯基二乙醇胺、N-甲基二乙醇胺、N-乙基二乙醇胺、4-(2-羥基乙基)啉、N,N-二甲基乙醯胺、N-甲基吡咯啶酮等)等。 As the peeling liquid, water and a solvent (organic solvent) can be used. Further, as the stripping liquid, an organic solvent in which the protective layer 71 is dissolved is preferable. Examples of the organic solvent include aliphatic hydrocarbons (hexane, heptane, Isopar E, H, G (manufactured by ESSO Chemical Co., Ltd.), aromatic hydrocarbons (toluene, xylene, etc.), and halogenated hydrocarbons. (dichloromethane, dichloroethane, trichloroethylene, monochlorobenzene, etc.), polar solvent. Examples of the polar solvent include alcohols (methanol, ethanol, propanol, isopropanol, 1-butanol, 1-pentanol, 1-hexanol, 1-heptanol, 1-octanol, 2-octanol). , 2-ethyl-1-hexanol, 1-nonanol, 1-nonanol, benzyl alcohol, ethylene glycol monomethyl ether, 2-ethoxyethanol, diethylene glycol monoethyl ether, diethyl Glycol monohexyl ether, triethylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether, polyethylene glycol monomethyl ether, polypropylene glycol, tetraethylene glycol, ethylene glycol monobutyl Ether, ethylene glycol monobenzyl ether, ethylene glycol monophenyl ether, propylene glycol monophenyl ether, methyl phenyl carbitol, n-pentanol, methyl pentanol, etc.), ketones (acetone, methyl Ethyl ketone, ethyl butyl ketone, methyl isobutyl ketone, cyclohexanone, etc.), esters (ethyl acetate, propyl acetate, butyl acetate, amyl acetate, benzyl acetate, methyl lactate, Butyl lactate, ethylene glycol monobutyl acetate, propylene glycol monomethyl ether acetate, diethylene glycol acetate, diethyl phthalate, butyl acetonate, etc.), other (phosphoric acid Triethyl ester, tricresyl phosphate, N-phenylethanolamine, N-phenyldiethanolamine , N-methyldiethanolamine, N-ethyldiethanolamine, 4-(2-hydroxyethyl) Oresine, N,N-dimethylacetamide, N-methylpyrrolidone, etc.).

再者,從剝離性之觀點來看,剝離液亦可包含鹼、酸及界面活性劑。摻合此等成分時,摻合量各自較佳為剝離液之0.1~5.0質量%。 Further, the release liquid may contain a base, an acid, and a surfactant from the viewpoint of peelability. When these components are blended, the blending amount is preferably from 0.1 to 5.0% by mass based on the stripping liquid.

更且,從剝離性之觀點來看,混合2種以上的有機溶劑及水、2種以上的鹼、酸及界面活性劑之形態亦較佳。 Further, from the viewpoint of the releasability, a form in which two or more kinds of organic solvents and water, two or more kinds of bases, an acid, and a surfactant are mixed is also preferable.

作為鹼,例如可使用第三磷酸鈉、第三磷酸鉀、第三磷酸銨、第二磷酸鈉、第二磷酸鉀、第二磷酸銨、碳酸鈉、碳酸鉀、碳酸銨、碳酸氫鈉、碳酸氫鉀、碳酸氫銨、硼酸鈉、硼酸鉀、硼酸銨、氫氧化鈉、氫氧化銨、氫氧化鉀及氫氧化鋰等之無機鹼劑,或單甲基胺、二甲基胺、三甲基胺、單乙基胺、二乙基胺、三乙基胺、單異丙基胺、二異丙基胺、三異丙基胺、正丁基胺、單乙醇胺、二乙醇胺、三乙醇胺、單異丙基胺、二異丙基胺、伸乙亞胺、乙二胺、吡啶、氫氧化四甲銨等之有機鹼劑。此等之鹼劑係可為單獨或組合2種以上使用。 As the base, for example, sodium third phosphate, potassium third phosphate, ammonium tertiary phosphate, sodium second phosphate, potassium second potassium phosphate, ammonium second ammonium phosphate, sodium carbonate, potassium carbonate, ammonium carbonate, sodium hydrogencarbonate, or carbonic acid can be used. An inorganic alkali agent such as potassium hydrogen, ammonium hydrogencarbonate, sodium borate, potassium borate, ammonium borate, sodium hydroxide, ammonium hydroxide, potassium hydroxide or lithium hydroxide, or monomethylamine, dimethylamine or trimethylamine Amine, monoethylamine, diethylamine, triethylamine, monoisopropylamine, diisopropylamine, triisopropylamine, n-butylamine, monoethanolamine, diethanolamine, triethanolamine, An organic alkaline agent such as monoisopropylamine, diisopropylamine, ethylenediamine, ethylenediamine, pyridine or tetramethylammonium hydroxide. These alkaline agents may be used alone or in combination of two or more.

作為酸,可使用鹵化氫、硫酸、硝酸、磷酸、硼酸等之無機酸,或甲磺酸、乙磺酸、苯磺酸、對甲苯磺酸、三氟甲烷磺酸、醋酸、檸檬酸、甲酸、葡萄糖酸、乳酸、草酸、酒石酸等之有機酸。 As the acid, an inorganic acid such as hydrogen halide, sulfuric acid, nitric acid, phosphoric acid or boric acid, or methanesulfonic acid, ethanesulfonic acid, benzenesulfonic acid, p-toluenesulfonic acid, trifluoromethanesulfonic acid, acetic acid, citric acid or formic acid can be used. An organic acid such as gluconic acid, lactic acid, oxalic acid or tartaric acid.

作為界面活性劑,可使用陰離子系、陽離子系、非離子系、兩性離子系之界面活性劑。此時,界面活性劑之含量,相對於鹼水溶液之全量,較佳為1~20 質量%,更佳為1~10質量%。 As the surfactant, an anionic, cationic, nonionic or zwitterionic surfactant can be used. In this case, the content of the surfactant is preferably from 1 to 20 with respect to the total amount of the aqueous alkali solution. The mass% is more preferably 1 to 10% by mass.

藉由使界面活性劑之含量成為上述範圍內,有可進一步提高接著性支撐體100’與薄型裝置晶圓60’的剝離性之傾向。 When the content of the surfactant is within the above range, the peeling property of the adhesive support 100' and the thin device wafer 60' can be further improved.

作為陰離子系界面活性劑,並沒有特別的限定,但可舉出脂肪酸鹽類、松香酸鹽類、羥基烷磺酸鹽類、烷磺酸鹽類、二烷基磺基琥珀酸鹽類、直鏈烷基苯磺酸鹽類、支鏈烷基苯磺酸鹽類、烷基萘磺酸鹽類、烷基二苯基醚(二)磺酸鹽類、烷基苯氧基聚氧乙烯烷基磺酸鹽類、聚氧乙烯烷基磺基苯基醚鹽類、N-烷基-N-油基牛磺鈉類、N-烷基磺基琥珀酸單醯胺二鈉鹽類、石油磺酸鹽類、硫酸化蓖麻油、硫酸化牛脂油、脂肪酸烷基酯之硫酸酯鹽類、烷基硫酸酯鹽類、聚氧乙烯烷基醚硫酸酯鹽類、脂肪酸單甘油酯硫酸酯鹽類、聚氧乙烯烷基苯基醚硫酸酯鹽類、聚氧乙烯苯乙烯基苯基醚硫酸酯鹽類、烷基磷酸酯鹽類、聚氧乙烯烷基醚磷酸酯鹽類、聚氧乙烯烷基苯基醚磷酸酯鹽類、苯乙烯-馬來酸酐共聚物之部分皂化物類、烯烴-馬來酸酐共聚物之部分皂化物類、萘磺酸鹽福馬林縮合物類等。其中,特佳使用烷基苯磺酸鹽類、烷基萘磺酸鹽類、烷基二苯基醚(二)磺酸鹽顆。 The anionic surfactant is not particularly limited, and examples thereof include fatty acid salts, rosin acid salts, hydroxyalkanesulfonates, alkanesulfonates, dialkyl sulfosuccinates, and straight Alkenyl benzene sulfonates, branched alkyl benzene sulfonates, alkyl naphthalene sulfonates, alkyl diphenyl ethers (di) sulfonates, alkyl phenoxy polyoxyethylenes Sulfonates, polyoxyethylene alkyl sulfophenyl ether salts, N-alkyl-N-oleyl taurosodium salts, N-alkyl sulfosuccinate monodecylamine disodium salt, petroleum Sulfonates, sulfated castor oil, sulfated tallow oil, sulfate esters of fatty acid alkyl esters, alkyl sulfate salts, polyoxyethylene alkyl ether sulfate salts, fatty acid monoglyceride sulfate salts , polyoxyethylene alkyl phenyl ether sulfate salts, polyoxyethylene styryl phenyl ether sulfate salts, alkyl phosphate salts, polyoxyethylene alkyl ether phosphate salts, polyoxyethylene Alkyl phenyl ether phosphate salts, partial saponifications of styrene-maleic anhydride copolymers, partial saponates of olefin-maleic anhydride copolymers, naphthalene sulfonate Salt formalin condensates and the like. Among them, alkylbenzenesulfonates, alkylnaphthalenesulfonates, and alkyldiphenylether (di)sulfonate are particularly preferably used.

作為陽離子系界面活性劑,並沒有特別的限定,可使用習知者。例如,可舉出烷基胺鹽類、四級銨鹽類、烷基咪唑啶鎓鹽、聚氧乙烯烷基胺鹽類、聚乙烯多胺衍生物。 The cationic surfactant is not particularly limited, and a conventional one can be used. For example, alkylamine salts, quaternary ammonium salts, alkylimidazolium salts, polyoxyethylene alkylamine salts, and polyethylene polyamine derivatives can be given.

作為非離子系界面活性劑,並沒有特別的限定,可舉出聚乙二醇型的高級醇環氧乙烷加成物、烷基苯酚環氧乙烷加成物、烷基萘酚環氧乙烷加成物、苯酚環氧乙烷加成物、萘酚環氧乙烷加成物、脂肪酸環氧乙烷加成物、多元醇脂肪酸酯環氧乙烷加成物、高級烷基胺環氧乙烷加成物、脂肪酸醯胺環氧乙烷加成物、油脂的環氧乙烷加成物、聚丙二醇環氧乙烷加成物、二甲基矽氧烷-環氧乙烷嵌段共聚物、二甲基矽氧烷-(環氧丙烷-環氧乙烷)嵌段共聚物、多元醇的甘油之脂肪酸酯、季戊四醇的脂肪酸酯、山梨糖醇及山梨糖醇酐的脂肪酸酯、蔗糖的脂肪酸酯、多元醇的烷基醚、烷醇胺類的脂肪酸醯胺等。其中,較佳為具有芳香環與環氧乙烷鏈者,更佳為烷基取代或無取代之苯酚環氧乙烷加成物或烷基取代或無取代之萘酚環氧乙加成物。 The nonionic surfactant is not particularly limited, and examples thereof include a polyethylene glycol type higher alcohol ethylene oxide adduct, an alkylphenol ethylene oxide adduct, and an alkyl naphthol epoxy. Ethane adduct, phenol ethylene oxide adduct, naphthol ethylene oxide adduct, fatty acid ethylene oxide adduct, polyol fatty acid ester ethylene oxide adduct, higher alkyl Amine oxirane adduct, fatty acid decylamine ethylene oxide adduct, ethylene oxide adduct of fats and oils, polypropylene glycol ethylene oxide adduct, dimethyl decane-epoxy Alkane block copolymer, dimethyloxane-(propylene oxide-ethylene oxide) block copolymer, fatty acid ester of glycerol of polyol, fatty acid ester of pentaerythritol, sorbitol and sorbitol A fatty acid ester of an anhydride, a fatty acid ester of sucrose, an alkyl ether of a polyhydric alcohol, a fatty acid decylamine of an alkanolamine, or the like. Among them, preferred are those having an aromatic ring and an ethylene oxide chain, more preferably an alkyl-substituted or unsubstituted phenol ethylene oxide adduct or an alkyl-substituted or unsubstituted naphthol epoxy ethylene adduct. .

作為兩性離子系界面活性劑,並沒有特別的限定,可舉出烷基二甲基胺氧化物等之胺氧化物系、烷基甜菜鹼等之甜菜鹼系、烷基胺基脂肪酸鈉等之胺基酸系。特別地,較宜使用可具有取代基的烷基二甲基胺氧化物、可具有取代基的烷基羧基甜菜鹼、可具有取代基的烷基磺基甜菜鹼。具體地,可使用日本特開2008-203359號之段落編號[0256]之式(2)所示的化合物、日本特開2008-276166號之段落編號[0028]之式(I)、式(II)、式(VI)所示的化合物、日本特開2009-47927號之段落編號[0022]~[0029]所示的化合物。 The zwitterionic surfactant is not particularly limited, and examples thereof include an amine oxide system such as an alkyl dimethylamine oxide, a betaine such as an alkylbetaine, and an alkylamino fatty acid sodium. Amino acid system. In particular, an alkyldimethylamine oxide which may have a substituent, an alkylcarboxybetaine which may have a substituent, an alkylsulfobetaine which may have a substituent, is preferably used. Specifically, a compound represented by the formula (2) of paragraph No. [0256] of JP-A-2008-203359, and a formula (I) and a formula (II) of paragraph number [0028] of JP-A-2008-276166 can be used. And a compound represented by the formula (VI), and a compound represented by paragraphs [0022] to [0029] of JP-A-2009-47927.

再者按照需要,亦可含有如消泡劑及硬水軟 化劑之添加劑。 In addition, as needed, it can also contain softeners such as defoamers and hard water. Additive for the agent.

其次,如第1圖(F)中所示,藉由去除裝置晶圓表面61a上之保護層71,可得到薄型裝置晶圓。作為去除保護層71之方法,可舉出薄膜狀的直接去除方法,與使溶解於水溶液或有機溶劑中而溶解去除方法,藉由活性光線、放射線或熱之照射而使分解、氣化之方法,但較佳可使用使溶解於有機溶劑中而溶解去除方法。作為水溶液或有機溶劑,只要是可溶解去除保護層之溶液,則可任意地使用,具體地可較宜地使用能溶解去除保護層的上述剝離液,更佳的態樣亦與剝離液相同。 Next, as shown in Fig. 1(F), a thin device wafer can be obtained by removing the protective layer 71 on the device wafer surface 61a. As a method of removing the protective layer 71, a method of directly removing a film, a method of dissolving and dissolving in an aqueous solution or an organic solvent, and a method of dissolving and vaporizing by active light, radiation, or heat may be mentioned. However, it is preferred to use a method of dissolving and dissolving in an organic solvent. The aqueous solution or the organic solvent may be used arbitrarily as long as it is a solution capable of dissolving and removing the protective layer. Specifically, the above-mentioned peeling liquid capable of dissolving and removing the protective layer can be preferably used, and a more preferable aspect is also the same as the peeling liquid.

自接著性支撐體100’脫離薄型裝置晶圓60’後,按照需要,對於薄型裝置晶圓60’,施予各種之眾所周知的處理,製造具有薄型裝置晶圓60’的半導體裝置。 After the adhesive support 100' is detached from the thin device wafer 60', various well-known processes are applied to the thin device wafer 60' as needed to manufacture a semiconductor device having the thin device wafer 60'.

又,如第1圖(F)中所示,藉由去除支撐體上的接著劑層,可再生支撐體。作為去除接著劑層之方法,可舉出薄膜狀直接與藉由刷子、超音波、冰粒子、氣溶膠之噴射而物理地去除之方法,使溶解於水溶液或有機溶劑而溶解去除之方法,藉由活性光線、放射線、熱之照射而使分解、氣化之方法等之化學去除方法,可按照支撐體,利用以往已知的洗淨方法。 Further, as shown in Fig. 1(F), the support can be regenerated by removing the adhesive layer on the support. As a method of removing the adhesive layer, a method of physically removing the film directly by spraying with a brush, an ultrasonic wave, an ice particle or an aerosol, and dissolving it in an aqueous solution or an organic solvent to dissolve and remove it is exemplified. A chemical removal method such as a method of decomposing or vaporizing by irradiation with active light, radiation, or heat can be carried out by a conventionally known cleaning method in accordance with the support.

例如,使用矽基板時,可使用以往已知的矽晶圓之洗淨方法,例如作為化學地去除之情況中可使用的水溶液或有機溶劑,可舉出強酸、強鹼、強氧化劑或彼等之混合物,具體地可舉出硫酸、鹽酸、氫氟酸、硝酸、有機酸等之酸類、四甲基銨、氨、有機鹼等之鹼類、過氧 化氫等之氧化劑、或氨與過氧化氫之混合物、鹽酸與雙氧水之混合物、硫酸與雙氧水之混合物、氫氟酸與雙氧水之混合物、氫氟酸與氟化銨之混合物等。 For example, when a ruthenium substrate is used, a conventionally known ruthenium wafer cleaning method can be used, for example, an aqueous solution or an organic solvent which can be used as a chemical removal, and examples thereof include a strong acid, a strong alkali, a strong oxidizing agent or the like. Specific examples of the mixture include acids such as sulfuric acid, hydrochloric acid, hydrofluoric acid, nitric acid, and organic acids, alkalis such as tetramethylammonium, ammonia, and organic bases, and peroxygen. An oxidizing agent such as hydrogen or a mixture of ammonia and hydrogen peroxide, a mixture of hydrochloric acid and hydrogen peroxide, a mixture of sulfuric acid and hydrogen peroxide, a mixture of hydrofluoric acid and hydrogen peroxide, a mixture of hydrofluoric acid and ammonium fluoride, and the like.

從使用經再生的支撐體時之接著性的觀點來看,較佳為以下之基板洗淨液。 From the viewpoint of the adhesion when using the regenerated support, the following substrate cleaning solution is preferred.

基板洗淨液較佳為包含pKa小於0之酸與過氧化氫。作為pKa小於0之酸,可自碘化氫、過氯酸、溴化氫、氯化氫、硝酸、硫酸等之無機酸、或烷基磺酸、芳基磺酸等之有機酸中選擇。從基板上之接著劑層的洗淨性之觀點來看,較佳為無機酸,最佳為硫酸。 The substrate cleaning solution preferably contains an acid having a pKa of less than 0 and hydrogen peroxide. The acid having a pKa of less than 0 may be selected from inorganic acids such as hydrogen iodide, perchloric acid, hydrogen bromide, hydrogen chloride, nitric acid, sulfuric acid, or the like, or an organic acid such as an alkylsulfonic acid or an arylsulfonic acid. From the viewpoint of the detergency of the adhesive layer on the substrate, a mineral acid is preferred, and sulfuric acid is preferred.

作為過氧化氫,較佳可使用30w/v%雙氧水,上述強酸與30w/v%雙氧水之混合比較佳為0.1:1~100:1,更佳為1:1~10:1,最佳為3:1~5:1。 As the hydrogen peroxide, 30 w/v% hydrogen peroxide is preferably used, and the mixture of the above strong acid and 30 w/v% hydrogen peroxide is preferably 0.1:1 to 100:1, more preferably 1:1 to 10:1, and most preferably 3:1~5:1.

其次,說明以往的實施形態。 Next, the conventional embodiment will be described.

第2圖係說明以往的接著性支撐體與裝置晶圓之暫時接著狀態的解除之示意截面圖。 Fig. 2 is a schematic cross-sectional view showing the release of the temporary state of the conventional adhesive support and the device wafer.

於以往的實施形態中,如第2圖中所示,作為接著性支撐體,使用在支撐體12之上設置由以往的暫時接著劑所形成的接著性層11’而成之接著性支撐體100’,其以外係與參照第1圖(A)及第1圖(B)的說明次序同樣地,將接著性支撐體100’與裝置晶圓予以暫時接著,進行裝置晶圓中的矽基板之薄膜化處理,其次與上述次序同樣地自接著性支撐體100’剝離薄型裝置晶圓60’。 In the conventional embodiment, as shown in FIG. 2, as the adhesive support, an adhesive support in which the adhesive layer 11' formed of a conventional temporary adhesive is provided on the support 12 is used. In the same manner as described with reference to FIGS. 1(A) and 1(B), the adhesive support 100' is temporarily attached to the device wafer to perform the ruthenium substrate in the device wafer. The thin film processing is followed by peeling off the thin device wafer 60' from the adhesive support 100' in the same manner as the above procedure.

然而,藉由以往的暫時接著劑係在以下者有困難:以高接著力暫時支撐被處理構件,不對處理過構 件造成損傷,容易解除對於處理過構件的暫時支撐。例如,為了使裝置晶圓與支撐體之暫時接著成為充分,於以往的暫時接著劑之內,若採用接著性高者,則裝置晶圓與支撐體之暫時接著有過強之傾向。因此,為了解除此過強的暫時接著,例如像第2圖中所示,在薄型裝置晶圓60’之背面61b’上黏貼膠帶(例如切割膠帶),自接著性支撐體100’剝離薄型裝置晶圓60’時,容易發生構造體63自設有構造體(凸塊)63的裝置晶片62脫離等之使裝置晶片62破損之不良狀況。 However, it is difficult to temporarily support the member to be processed by a high adhesion force by the conventional temporary adhesive agent, and the processing is not performed. The damage is caused by the pieces, and the temporary support for the treated members is easily released. For example, in order to make the temporary contact between the device wafer and the support sufficiently sufficient, if the adhesion is high in the conventional temporary adhesive, the temporary orientation of the device wafer and the support tends to be too strong. Therefore, in order to release this excessively strong temporary, for example, as shown in FIG. 2, a tape (for example, a dicing tape) is adhered to the back surface 61b' of the thin device wafer 60', and the thin device is peeled off from the adhesive support 100'. In the case of the wafer 60', it is easy to cause the structure 63 to be detached from the device wafer 62 in which the structure (bump) 63 is provided, and the device wafer 62 is broken.

另一方面,於以往的暫時接著劑之內,若採用接著性低者,則可容易地解除對於處理過構件的暫時支撐,但終究裝置晶圓與載體基板之暫時接著係過弱,容易發生以載體基板無法確實地支撐裝置晶圓之不良狀況。 On the other hand, in the conventional temporary adhesive, if the adhesion is low, the temporary support for the processed member can be easily released, but the temporary connection between the device wafer and the carrier substrate is weak and easy to occur. The carrier substrate cannot reliably support the device wafer.

然而,由本發明之接著劑層前驅物所形成之接著劑層,係展現充分的接著性,同時可容易地解裝除置晶圓60與接著性支撐體100’之暫時接著。即,藉由本發明之積層體,可以高接著力來暫時支撐裝置晶圓60,同時不對薄型裝置晶圓60’造成損傷,可容易地解除對於薄型裝置晶圓60’之暫時支撐。 However, the adhesive layer formed of the adhesive layer precursor of the present invention exhibits sufficient adhesion while easily releasing the temporary attachment of the wafer 60 and the adhesive support 100'. That is, with the laminated body of the present invention, the device wafer 60 can be temporarily supported with a high adhesion force, and the thin device wafer 60' can be prevented from being damaged, and the temporary support for the thin device wafer 60' can be easily released.

本發明之積層體之形成方法及半導體裝置之製造方法係不受前述實施形態所限定,適宜的變形、改良等係可能。 The method for forming a laminate and the method for producing a semiconductor device of the present invention are not limited to the above embodiments, and suitable modifications, improvements, and the like are possible.

於前述實施形態中,由本發明的接著劑層前驅物所形成之接著性層,係在裝置晶圓的暫時接著之前,藉由設置在支撐體之上而構成接著性支撐體,但亦可 首先藉由設置在裝置晶圓等的被處理構件之上,其次將設有接著劑層的被處理構件與支撐體予以暫時接著。 In the above embodiment, the adhesive layer formed of the adhesive layer precursor of the present invention constitutes an adhesive support by being provided on the support before the temporary mounting of the device wafer. First, it is placed on a member to be processed such as a device wafer, and then the member to be treated in which the adhesive layer is provided is temporarily brought back to the support.

另外,於前述實施形態中,接著劑層前驅物及接著性層係單層構造,但接著劑層前驅物及接著性層亦可為多層構造。作為形成多層構造的接著性層之方法,可舉出於照射活性光線、放射線或熱之前,用前述習知的方法階段地應用暫時接著劑之方法,或於照射活性光線、放射線或熱後,用前述習知的方法應用暫時接著劑之方法等。 Further, in the above embodiment, the adhesive layer precursor and the adhesive layer have a single layer structure, but the adhesive layer precursor and the adhesive layer may have a multilayer structure. As a method of forming the adhesive layer of the multilayer structure, a method of applying a temporary adhesive agent in stages by the aforementioned conventional method, or after irradiating active light, radiation or heat, before irradiating active light, radiation or heat, A method of applying a temporary adhesive or the like by the aforementioned conventional method.

還有,於前述實施形態中,作為經由接著性支撐體所支撐的被處理構件,舉出矽基板,但不受此所限定,可為在半導體裝置之製造方法中,能供機械或化學處理之任何的被處理構件。 Further, in the above-described embodiment, the substrate to be processed supported by the adhesive support is not limited thereto, and may be mechanically or chemically treated in the method of manufacturing the semiconductor device. Any of the processed components.

例如,作為被處理構件,亦可舉出化合物半導體基板,作為化合物半導體基板之具體例,可舉出SiC基板、SiGe基板、ZnS基板、ZnSe基板、GaAs基板、InP基板及GaN基板等。 For example, a compound semiconductor substrate may be mentioned as a member to be processed, and examples of the compound semiconductor substrate include a SiC substrate, a SiGe substrate, a ZnS substrate, a ZnSe substrate, a GaAs substrate, an InP substrate, and a GaN substrate.

再者,於前述實施形態中,作為對於經由接著性支撐體所支撐的矽基板之機械或化學處理,舉出矽基板之薄膜化處理及矽貫通電極之形成處理,但不受此等所限定,亦可舉出在半導體裝置之製造方法中必要的任何處理。 Further, in the above-described embodiment, the mechanical treatment or the chemical treatment of the tantalum substrate supported by the adhesive support is a thinning treatment of the tantalum substrate and a formation process of the tantalum through electrode, but the present invention is not limited thereto. Any processing necessary in the method of manufacturing the semiconductor device can also be cited.

裝置晶圓中之裝置晶片的形狀、尺寸、數目、配置地方等,只要是可達成本發明者,則可為任意而不限定。 The shape, size, number, arrangement place, and the like of the device wafer in the device wafer may be arbitrarily and unrestricted as long as it is cost-effective.

[實施例] [Examples]

以下,藉由實施例更具體地說明本發明,惟本發明只要不超越其主旨,則不受以下的實施例所限定。再者,只要沒有特別預先指明,則「份」、「%」係以質量基準。 Hereinafter, the present invention will be more specifically described by the examples, but the present invention should not be construed as limited to In addition, "parts" and "%" are based on quality unless otherwise specified.

<具有接著劑層前驅物形成用組成物層的支撐體之形成> <Formation of Support Body Having Composition Layer for Adhesive Layer Precursor Formation>

藉由旋塗機,於200mmSi晶圓上塗布下述記載之接著層前驅物形成用組成物後,在120℃烘烤30秒,形成設有厚度0.2μm的接著性前驅物形成用組成物層之晶圓。對設有接著性前驅物形成用組成物層之晶圓,使用傅立葉轉換型紅外分光計(EXCALIBUR FTS-3000),測定在820-800cm-1附近的σ=CH(乙烯基CH之面外變角振動帶)之波峰面積。 The composition for forming an adhesive layer precursor described below was applied onto a 200 mm Si wafer by a spin coater, and then baked at 120 ° C for 30 seconds to form a composition layer for forming an adhesive precursor having a thickness of 0.2 μm. Wafer. For a wafer provided with a composition layer for an adhesive precursor formation, σ = CH (vinyl CH) is measured in the vicinity of 820-800 cm -1 using a Fourier transform infrared spectrometer (EXCALIBUR FTS-3000). The angular area of the angular vibration band).

<接著劑層前驅物形成用組成物> <Substituent composition for forming an adhesive layer precursor>

‧聚合性單體或寡聚物(b-1) 下述表中記載之質量份 ‧Polymerizable monomer or oligomer (b-1) The mass parts described in the following table

‧聚合性單體或寡聚物(b-1’) 下述表中記載之質量份 ‧ Polymerizable monomer or oligomer (b-1') The mass parts described in the following table

‧光自由基聚合引發劑(b-2) 下述表中記載之質量份 ‧Photoradical polymerization initiator (b-2) The mass parts described in the following table

‧熱自由基聚合引發劑(b-3) 下述表中記載之質量份 ‧ Thermal radical polymerization initiator (b-3) The mass parts described in the following table

‧高分子化合物(b-4) 下述表中記載之質量份 ‧ Polymer compound (b-4) The mass parts described in the following table

‧聚合抑制劑(對甲氧基苯酚,東京化成公司製) 0.008質量份 ‧Polymerization inhibitor (p-methoxyphenol, manufactured by Tokyo Chemical Industry Co., Ltd.) 0.008 parts by mass

‧界面活性劑(PF6320,OMNOVA公司製) 0.032質量份 ‧ Surfactant (PF6320, manufactured by OMNOVA) 0.032 parts by mass

‧溶劑(丙二醇單丙基醚乙酸酯) 94.96質量份 ‧ solvent (propylene glycol monopropyl ether acetate) 94.96 parts by mass

表1中記載之化合物係如以下。 The compounds described in Table 1 are as follows.

[(b-1)聚合性單體或寡聚物] [(b-1) polymerizable monomer or oligomer]

(b-1-1) Blemmer PME400(日油(股)製)) (b-1-1) Blemmer PME400 (Nippon Oil Co., Ltd.)

(b-1-2) NK Ester A-BPE-4(新中村化學工業(股)製) (b-1-2) NK Ester A-BPE-4 (manufactured by Shin-Nakamura Chemical Industry Co., Ltd.)

(b-1-3) NK Ester A-BPE-10(新中村化學工業(股)製) (b-1-3) NK Ester A-BPE-10 (manufactured by Shin-Nakamura Chemical Industry Co., Ltd.)

(b-1-4) 二乙烯基苯(和光純藥工業(股)製) (b-1-4) Divinylbenzene (Wako Pure Chemical Industries, Ltd.)

(b-1-5) Light Acrylate TMP-A(共榮社化學(股)製) (b-1-5) Light Acrylate TMP-A (Kyoeisha Chemical Co., Ltd.)

(b-1-6) NK Ester A-TMP-3EO(新中村化學工業(股)製) (b-1-6) NK Ester A-TMP-3EO (New Nakamura Chemical Industry Co., Ltd.)

(b-1-7) NK Ester AD-TMP(新中村化學工業(股)製) (b-1-7) NK Ester AD-TMP (manufactured by Shin-Nakamura Chemical Industry Co., Ltd.)

(b-1-8) NK Ester A-DPH(新中村化學工業(股)製) (b-1-8) NK Ester A-DPH (New Nakamura Chemical Industry Co., Ltd.)

(b-1-9) 異三聚氰酸三烯丙酯(東京化成工業(股)製) (b-1-9) Triallyl isocyanurate (Tokyo Chemical Industry Co., Ltd.)

(b-1-10) RS-76-E(氟系寡聚物,DIC(股)製) (b-1-10) RS-76-E (fluorine-based oligomer, manufactured by DIC)

(b-1-11) RS-72-K(氟系寡聚物,DIC(股)製) (b-1-11) RS-72-K (fluorine-based oligomer, manufactured by DIC)

(b-1-12) Optool DAC-HP(氟系寡聚物,DAIKIN工業(股)製) (b-1-12) Optool DAC-HP (fluorine-based oligomer, manufactured by DAIKIN Industries Co., Ltd.)

(b-1-13) X-22-164(矽系寡聚物,2官能單體,信越化學工業(股)製) (b-1-13) X-22-164 (lanthanum oligomer, 2-functional monomer, manufactured by Shin-Etsu Chemical Co., Ltd.)

(b-1-14) 下述構造的氟系單體 (b-1-14) Fluorine monomer of the following structure

[(b-2)光自由基聚合引發劑] [(b-2) Photoradical polymerization initiator]

(b-2-1) IRGACURE OXE 02(BASF公司製) (b-2-1) IRGACURE OXE 02 (manufactured by BASF Corporation)

(b-2-2) Kayacure DETX(日本化藥公司製) (b-2-2) Kayacure DETX (manufactured by Nippon Kayaku Co., Ltd.)

[(b-3)熱自由基聚合引發劑] [(b-3) Thermal Radical Polymerization Initiator]

(b-3-1) Perbutyl Z(第三丁基過氧苯甲酸酯,分解溫度(10小時半衰期溫度=104℃),日油(股)製) (b-3-1) Perbutyl Z (tertiary butyl peroxybenzoate, decomposition temperature (10-hour half-life temperature = 104 ° C), manufactured by Nippon Oil Co., Ltd.)

(b-3-2) Perhexa 22(2,2-二-(第三丁基過氧)丁烷,分解溫度(10小時半衰期溫度=103℃),日油(股)製) (b-3-2) Perhexa 22 (2,2-di-(t-butylperoxy)butane, decomposition temperature (10-hour half-life temperature = 103 ° C), manufactured by Nippon Oil Co., Ltd.)

[(b-4)高分子化合物] [(b-4) polymer compound]

(b-4-1) Estyrene MS600(甲基甲基丙烯酸酯-苯乙烯共聚合樹脂,新日鐵住金化學(股)製) (b-4-1) Estyrene MS600 (Methyl Methacrylate-Styrene Copolymerized Resin, Nippon Steel & Sumitomo Chemical Co., Ltd.)

(b-4-2) 聚甲基丙烯酸甲酯(Aldrich製,Mw:12.0萬) (b-4-2) Polymethyl methacrylate (made by Aldrich, Mw: 120,000)

[具有氟原子的化合物(b-5)] [Compound (b-5) having a fluorine atom]

(b-5-1) Daifree FB-962(DAIKIN工業(股)製) (b-5-1) Daifree FB-962 (DAIKIN Industrial Co., Ltd.)

<被處理構件之製作> <Production of processed components>

作為被處理構件,於高度10μm的附Cu製凸塊之200mmSi晶圓上,藉由旋塗機塗布下述表中記載之保護層形成用組成物後,於下述表中記載之條件下1次或分2次進行烘烤,形成設有厚度20μm的保護層之晶圓。 As a member to be processed, a composition for forming a protective layer described in the following table was applied onto a 200 mm Si wafer with a bump of Cu having a height of 10 μm by a spin coater, and then under the conditions described in the following table. Baking is performed twice or twice to form a wafer having a protective layer having a thickness of 20 μm.

<保護層形成用組成物之組成> <Composition of a composition for forming a protective layer>

‧樹脂成分 下述表中記載之質量份 ‧Resin component The mass parts described in the following table

‧溶劑 下述表中記載之質量份 ‧Solvents The mass parts described in the following table

表2中記載之化合物係如以下。 The compounds described in Table 2 are as follows.

[樹脂成分] [resin composition]

(C-1-1) ultrasonE6020P(聚醚碸樹脂,BASF公司製) (C-1-1) ultrason E6020P (polyether oxime resin, manufactured by BASF Corporation)

(C-1-2) PCZ-300(聚碳酸酯樹脂,三菱Gas化學(股)製) (C-1-2) PCZ-300 (polycarbonate resin, Mitsubishi Gas Chemical Co., Ltd.)

(C-1-3) Estyrene MS200NT(聚苯乙烯樹脂,新日鐵化學(股)製) (C-1-3) Estyrene MS200NT (polystyrene resin, Nippon Steel Chemical Co., Ltd.)

(C-1-4) TOPAS 5013(烴樹脂,POLYPLASTICS(股)製) (C-1-4) TOPAS 5013 (hydrocarbon resin, manufactured by POLYPLASTICS)

[溶劑] [solvent]

(C-2-1) N-甲基-2-吡咯啶酮(NMP)(和光純藥公司製) (C-2-1) N-methyl-2-pyrrolidone (NMP) (made by Wako Pure Chemical Industries, Ltd.)

(C-2-2) 茴香醚(和光純藥公司製) (C-2-2) Anisole (made by Wako Pure Chemical Industries, Ltd.)

(C-2-3) 丙二醇單甲基醚乙酸酯(PGMEA)(和光純藥公司製) (C-2-3) Propylene Glycol Monomethyl Ether Acetate (PGMEA) (made by Wako Pure Chemical Industries, Ltd.)

(C-2-4) 檸檬烯(關東化學公司製) (C-2-4) Limonene (made by Kanto Chemical Co., Ltd.)

[具有氟原子的化合物(C-3)] [Compound (C-3) having a fluorine atom]

(C-3-1) Daifree FB-962(DAIKIN工業(股)製) (C-3-1) Daifree FB-962 (DAIKIN Industrial Co., Ltd.)

<積層體之製作> <Production of laminated body>

其次,如表中記載,使用具有接著劑層前驅物形成用組成物層的晶圓及具有保護層的被處理構件,於真空下120℃、1000N之壓力下進行3分鐘壓合,而得到具有晶圓、接著劑層前驅物、保護層、被處理構件之積層體。將所得之積層體在層之垂直方向中拉伸,分割成具有接著劑前驅物的晶圓與具有保護層的被處理構件,對具有接著劑前驅物的晶圓,使用傅立葉轉換型紅外分光計(EXCALIBUR FTS-3000),測定在820-800cm-1附近的σ=CH(乙烯基CH之面外變角振動帶)之波峰面積。 Next, as described in the table, a wafer having a composition layer for forming an adhesive layer precursor and a member to be treated having a protective layer are pressed under vacuum at 120 ° C under a pressure of 1000 N for 3 minutes to obtain A laminate of a wafer, an adhesive layer precursor, a protective layer, and a member to be processed. The obtained laminate is stretched in the vertical direction of the layer, and is divided into a wafer having an adhesive precursor and a member to be processed having a protective layer. For a wafer having an adhesive precursor, a Fourier transform infrared spectrometer is used. (EXCALIBUR FTS-3000), the peak area of σ = CH (external angular vibration band of vinyl CH) in the vicinity of 820-800 cm -1 was measured.

自貼合前後之波峰面積值的減少率,算出加熱或光照射前後的接著劑前驅物中之聚合性單體或寡聚物之聚 合率。 Calculating the reduction rate of the peak area value before and after the bonding, and calculating the aggregation of the polymerizable monomer or oligomer in the adhesive precursor before and after heating or light irradiation Combination rate.

再度,如表中記載,使用具有接著劑層前驅物形成用組成物層的晶圓及具有保護層的被處理構件,於真空下120℃、1000N之壓力下進行3分鐘壓合,而得到具有晶圓、接著劑層前驅物、保護層、被處理構件之積層體。 Further, as described in the table, a wafer having a composition layer for forming an adhesive layer precursor and a member to be treated having a protective layer are pressed under vacuum at 120 ° C under a pressure of 1000 N for 3 minutes, thereby obtaining A laminate of a wafer, an adhesive layer precursor, a protective layer, and a member to be processed.

再者,於常壓下在200℃進行3分鐘的加熱,而使接著劑層前驅物成為接著劑層,得到接著性試驗片。 Further, the film was heated at 200 ° C for 3 minutes under normal pressure, and the adhesive layer precursor was used as an adhesive layer to obtain an adhesive test piece.

<接著性試驗片之接著力測定> <Measurement of adhesion force of adhesive test piece>

使用拉伸試驗機(IMADA(股)製數位測力計,型式:ZP-50N),於250mm/分鐘之條件下沿著接著性層之面的方向拉伸,測定在下述表中記載之條件下所製作的試驗片之剪切接著力,用以下之基準評價。 Using a tensile tester (IMADA (digital) dynamometer, type: ZP-50N), the film was stretched in the direction of the surface of the adhesive layer at 250 mm/min, and the conditions described in the following table were measured. The shearing force of the test piece produced below was evaluated by the following criteria.

A:強接著到晶圓破裂之程度 A: Strong to the extent of wafer rupture

B:以超過10N且50N以下之力剝落 B: peeling off with a force of more than 10N and less than 50N

C:以10N以下之力剝落 C: peeling off with a force of 10N or less

<剝離性> <peelability>

將在下述表中記載之條件下所製作的試驗片,於250mm/分鐘之條件下在接著劑層的垂直方向中拉伸。確認剝離性。又,將所製作的試驗片在250℃加熱30分鐘後,同樣地於250mm/分鐘之條件下在接著劑層的垂直方向中拉伸,確認熱加工後的剝離性,用以下之基準評價。再者,目視確認Si晶圓有無破損。 The test piece prepared under the conditions described in the following table was stretched in the vertical direction of the adhesive layer under conditions of 250 mm/min. Confirm the peelability. Furthermore, the test piece produced was heated at 250 ° C for 30 minutes, and then stretched in the vertical direction of the adhesive layer under the conditions of 250 mm/min in the same manner, and the peeling property after hot working was confirmed, and the evaluation was performed based on the following criteria. Furthermore, it was visually confirmed whether or not the Si wafer was damaged.

AA:以最大剝離力為小於10N可剝離 AA: peelable with a maximum peel force of less than 10N

A:以最大剝離力為10N以上且小於20N可剝離 A: peelable at a maximum peeling force of 10 N or more and less than 20 N

B:以最大剝離力為20N以上且小於30N可剝離 B: peelable at a maximum peeling force of 20 N or more and less than 30 N

C:以最大剝離力為30N以上且小於50N可剝離 C: peelable at a maximum peeling force of 30 N or more and less than 50 N

D:最大剝離力為50N以上或晶圓破損 D: The maximum peeling force is 50N or more or the wafer is damaged.

<TTV:Total Thickness Variation> <TTV: Total Thickness Variation>

對接合晶圓,使用DISCO(股)製研磨機(DFG8560),將相對於被處理構件之接合面而言的背面側,薄化直到被處理構件之膜厚成為100μm為止。然後,使用ISIS公司製半導體基板表面檢査裝置(SemDex300),測定被處理構件之層厚,求得厚度之最小值與最大值之差,用以下之基準評價。 For the bonded wafer, a back side of the joint surface of the member to be processed was thinned using a DISCO 8560 grinding machine (DFG8560) until the film thickness of the member to be processed became 100 μm. Then, the layer thickness of the member to be processed was measured using a semiconductor substrate surface inspection apparatus (SemDex300) manufactured by ISIS, and the difference between the minimum value and the maximum value of the thickness was determined and evaluated by the following criteria.

A:最小值與最大值之差為5μm以下 A: the difference between the minimum value and the maximum value is 5 μm or less

B:最小值與最大值之差超過5μm B: the difference between the minimum value and the maximum value exceeds 5 μm

<洗淨去除性> <washing removal>

將剝離性試驗結束後之經由切割膠帶安裝於切割框上的200mm晶圓(暴露於耐熱性試驗條件下者),使接著劑層成為上方,固定在旋塗機,使用下述表中記載之溶劑作為洗淨溶劑,5分鐘噴灑後,邊使晶圓旋轉邊噴灑異丙醇(IPA)進行沖洗。然後,觀察外觀,目視查核有無殘存的接著劑樹脂,用以下之基準評價。 After the peeling test was completed, the 200 mm wafer (exposed to the heat resistance test condition) attached to the dicing frame via a dicing tape was placed, and the adhesive layer was placed on the spin coater, and the following table was used. The solvent was used as a washing solvent, and after spraying for 5 minutes, isopropyl alcohol (IPA) was sprayed while rotating the wafer. Then, the appearance was observed, and the presence or absence of the residual adhesive resin was visually checked and evaluated by the following criteria.

A:沒看見樹脂之殘存 A: I didn't see the resin remaining.

B:看見樹脂之殘存 B: I saw the residual resin.

如以上,可知在(A)支撐體上依順序具有(B)接著劑層前驅物、(C)保護層、(D)裝置晶圓,上述(B)接著劑層前驅物包含(b-1)聚合性單體或寡聚物,其聚合率為10~70%之實施例,係不僅在接著性及剝離性得到良好的結果,而且TTV及洗淨性亦優異。 As described above, it is understood that the (B) adhesive layer precursor, the (C) protective layer, and the (D) device wafer are sequentially provided on the (A) support, and the (B) adhesive layer precursor includes (b-1). In the examples in which the polymerization ratio of the polymerizable monomer or oligomer is from 10 to 70%, not only the adhesion and the release property are good, but also the TTV and the detergency are excellent.

另一方面,可知聚合性單體之聚合率小於10%之比較例1,係剝離性比實施例還差。可知聚合性單體之聚合率超過70%之比較例2,係接著力比實施例還差。又,可知不具有接著劑層前驅物及保護層的任一者之比較例3~4,係接著力及TTV比實施例還差。 On the other hand, in Comparative Example 1 in which the polymerization rate of the polymerizable monomer was less than 10%, the peelability was inferior to that of the examples. In Comparative Example 2 in which the polymerization rate of the polymerizable monomer exceeded 70%, the adhesion was worse than that of the examples. Further, it is understood that Comparative Examples 3 to 4 which do not have any of the adhesive layer precursor and the protective layer are inferior to the examples in terms of adhesion and TTV.

又,可知若於接著劑層前驅物中具有3官能以上的自由基聚合性單體及/或具有氟原子的自由基聚合性單體,則剝離性進一步提高(實施例8、10~12、14~30、33)。 In addition, when the radical polymerizable monomer having a trifunctional or higher functional group and/or a radical polymerizable monomer having a fluorine atom is contained in the adhesive layer precursor, the peeling property is further improved (Examples 8 and 10 to 12, 14~30, 33).

再者,可知若於接著劑層前驅物中包含具有氟原子的自由基聚合性化合物,更且於接著劑層前驅物或保護層中包含具有氟原子的非聚合性化合物,則剝離性進一步提高(實施例35、36、39~48))。 In addition, when a radical polymerizable compound having a fluorine atom is contained in the precursor of the adhesive layer, and a non-polymerizable compound having a fluorine atom is contained in the adhesive layer precursor or the protective layer, the peeling property is further improved. (Examples 35, 36, 39 to 48)).

Claims (24)

一種積層體,其係在(A)支撐體上依順序具有(B)接著劑層前驅物、(C)保護層、(D)裝置晶圓,該(B)接著劑層前驅物包含(b-1)聚合性單體及/或聚合性寡聚物,且聚合性單體及/或聚合性寡聚物之聚合率為10~70%,該支撐體為矽基板、玻璃基板或金屬基板,該接著劑層前驅物與該支撐體相接。A laminate comprising (B) an adhesive layer precursor, (C) a protective layer, and (D) a device wafer on the (A) support, the (B) adhesive layer precursor comprising (b) -1) a polymerizable monomer and/or a polymerizable oligomer, and a polymerization ratio of a polymerizable monomer and/or a polymerizable oligomer is 10 to 70%, and the support is a ruthenium substrate, a glass substrate or a metal substrate. The adhesive layer precursor is in contact with the support. 如請求項1之積層體,其中(b-1)聚合性單體及/或聚合性寡聚物包含至少1種之3官能以上的自由基聚合性單體。The layered product of claim 1, wherein the (b-1) polymerizable monomer and/or the polymerizable oligomer contains at least one of three or more functional groups of a radical polymerizable monomer. 如請求項1或2之積層體,其中(b-1)聚合性單體及/或聚合性寡聚物包含至少1種之具有氟原子及/或矽原子的自由基聚合性化合物。The laminate according to claim 1 or 2, wherein the (b-1) polymerizable monomer and/or the polymerizable oligomer contains at least one radical polymerizable compound having a fluorine atom and/or a ruthenium atom. 如請求項1或2之積層體,其中(b-1)聚合性單體及/或聚合性寡聚物包含2官能以下的自由基聚合性單體及3官能以上的自由基聚合性單體。The laminate according to claim 1 or 2, wherein the (b-1) polymerizable monomer and/or the polymerizable oligomer contains a bifunctional or less radical polymerizable monomer and a trifunctional or higher radical polymerizable monomer. . 如請求項1或2之積層體,其中接著劑層前驅物更含有(b-2)光自由基引發劑。The laminate of claim 1 or 2, wherein the adhesive layer precursor further comprises (b-2) a photoradical initiator. 如請求項1或2之積層體,其中接著劑層前驅物更含有(b-3)熱自由基引發劑。The laminate of claim 1 or 2, wherein the adhesive layer precursor further comprises (b-3) a thermal radical initiator. 如請求項1或2之積層體,其中接著劑層前驅物更含有(b-4)高分子化合物。The laminate of claim 1 or 2, wherein the adhesive layer precursor further contains (b-4) a polymer compound. 如請求項1或2之積層體,其中接著劑層前驅物在25℃的儲存彈性模數為10MPa以上且小於1GPa。The laminate according to claim 1 or 2, wherein the adhesive layer precursor has a storage elastic modulus at 25 ° C of 10 MPa or more and less than 1 GPa. 一種積層體,其係在(A)支撐體上依順序具有(B2)接著劑層、(C)保護層、(D)裝置晶圓,該(B2)接著劑層係接著劑層前驅物之硬化物,該接著劑層前驅物包含(b-1)聚合性單體及/或聚合性寡聚物,且聚合性單體及/或聚合性寡聚物之聚合率為10~70%,該支撐體為矽基板、玻璃基板或金屬基板,該接著劑層前驅物與該支撐體相接。A laminate comprising (B2) an adhesive layer, (C) a protective layer, and (D) a device wafer on a (A) support, the (B2) adhesive layer being an adhesive layer precursor a cured product, the adhesive layer precursor comprising (b-1) a polymerizable monomer and/or a polymerizable oligomer, and a polymerization ratio of the polymerizable monomer and/or the polymerizable oligomer is 10 to 70%. The support is a tantalum substrate, a glass substrate or a metal substrate, and the adhesive layer precursor is in contact with the support. 如請求項9之積層體,其中接著劑層前驅物在25℃的儲存彈性模數為10MPa以上且小於1GPa。The laminate according to claim 9, wherein the adhesive layer precursor has a storage elastic modulus at 25 ° C of 10 MPa or more and less than 1 GPa. 如請求項1或9之積層體,其中(C)保護層之軟化點為170℃以上250℃以下。The laminate of claim 1 or 9, wherein the softening point of the (C) protective layer is 170 ° C or more and 250 ° C or less. 如請求項1或9之積層體,其中(C)保護層係熱塑性樹脂。The laminate of claim 1 or 9, wherein the (C) protective layer is a thermoplastic resin. 如請求項1或9之積層體,其中(C)保護層包含由聚醚碸樹脂、聚醯亞胺樹脂、聚酯樹脂、聚苯并咪唑樹脂、聚醯胺醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂及聚醚醚酮樹脂中選出的至少1種之熱塑性樹脂。The laminate according to claim 1 or 9, wherein the (C) protective layer comprises a polyether oxime resin, a polyimide resin, a polyester resin, a polybenzimidazole resin, a polyamide amide resin, a polycarbonate At least one thermoplastic resin selected from the group consisting of a resin, a polystyrene resin, and a polyetheretherketone resin. 如請求項1或9之積層體,其中(D)裝置晶圓係在表面上具有高度1μm以上150μm以下的構造體。The laminate according to claim 1 or 9, wherein the (D) device wafer has a structure having a height of 1 μm or more and 150 μm or less on the surface. 一種保護層形成用組成物,其係製造如請求項1至14中任一項之積層體的保護層用之保護層形成用組成物,且包含樹脂與溶劑,該樹脂之軟化點為170℃以上250℃以下。A protective layer forming composition which is a protective layer forming composition for a protective layer of a laminate according to any one of claims 1 to 14, which comprises a resin and a solvent, and the resin has a softening point of 170 ° C. Above 250 ° C. 一種組成物,其係製造如請求項1至8及10至14中任一項之積層體的接著劑層前驅物或如請求項9之接著劑層用之組成物,且包含溶劑與(b-1)聚合性單體及/或聚合性寡聚物。A composition for producing an adhesive layer precursor of the laminate of any one of claims 1 to 8 and 10 to 14 or a composition for an adhesive layer of claim 9, and comprising a solvent and (b) -1) a polymerizable monomer and/or a polymerizable oligomer. 如請求項16之組成物,其中(b-1)聚合性單體及/或聚合性寡聚物包含至少1種之3官能以上的自由基聚合性單體。The composition of claim 16, wherein the (b-1) polymerizable monomer and/or the polymerizable oligomer contains at least one of three or more functional groups of a radical polymerizable monomer. 如請求項16或17之組成物,其中(b-1)聚合性單體及/或聚合性寡聚物包含至少1種之具有氟原子及/或矽原子的自由基聚合性化合物。The composition of claim 16 or 17, wherein the (b-1) polymerizable monomer and/or the polymerizable oligomer comprises at least one radical polymerizable compound having a fluorine atom and/or a ruthenium atom. 如請求項16或17之組成物,其中(b-1)聚合性單體及/或聚合性寡聚物包含2官能以下的自由基聚合性單體及3官能以上的自由基聚合性單體。The composition of claim 16 or 17, wherein (b-1) the polymerizable monomer and/or the polymerizable oligomer contains a bifunctional or less radical polymerizable monomer and a trifunctional or higher radical polymerizable monomer . 如請求項16或17之組成物,其更含有(b-2)光自由基引發劑。The composition of claim 16 or 17, which further comprises (b-2) a photoradical initiator. 如請求項16或17之組成物,其更包含(b-3)熱自由基引發劑。The composition of claim 16 or 17, further comprising (b-3) a thermal free radical initiator. 如請求項16或17之組成物,其中更包含(b-4)高分子化合物。The composition of claim 16 or 17, which further comprises (b-4) a polymer compound. 一種套組,其係製造如請求項1至14中任一項之積層體用之套組,且包含:含有樹脂與溶劑的保護層形成用組成物;及,含有溶劑與聚合性單體及/或聚合性寡聚物的接著劑層前驅物或接著劑層形成用組成物。A kit for manufacturing a laminate according to any one of claims 1 to 14, comprising: a protective layer-forming composition containing a resin and a solvent; and a solvent and a polymerizable monomer; / or an adhesive layer precursor of a polymerizable oligomer or a composition for forming an adhesive layer. 如請求項23之套組,其中接著劑層前驅物在25℃的儲存彈性模數為10MPa以上且小於1GPa。The kit of claim 23, wherein the adhesive layer precursor has a storage elastic modulus at 25 ° C of 10 MPa or more and less than 1 GPa.
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