TWI639850B - 光瞳組合反射鏡、照明光學單元、照明系統、投射曝光設備、用於產生一微結構或奈米結構元件之方法以及微結構或奈米結構元件 - Google Patents
光瞳組合反射鏡、照明光學單元、照明系統、投射曝光設備、用於產生一微結構或奈米結構元件之方法以及微結構或奈米結構元件 Download PDFInfo
- Publication number
- TWI639850B TWI639850B TW102117653A TW102117653A TWI639850B TW I639850 B TWI639850 B TW I639850B TW 102117653 A TW102117653 A TW 102117653A TW 102117653 A TW102117653 A TW 102117653A TW I639850 B TWI639850 B TW I639850B
- Authority
- TW
- Taiwan
- Prior art keywords
- mirror
- pupil
- view
- field
- optical unit
- Prior art date
Links
- 210000001747 pupil Anatomy 0.000 title claims abstract description 72
- 238000005286 illumination Methods 0.000 title claims abstract description 56
- 230000003287 optical effect Effects 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 230000007246 mechanism Effects 0.000 claims abstract description 11
- 230000001629 suppression Effects 0.000 claims abstract description 6
- 230000005855 radiation Effects 0.000 claims description 62
- 238000003384 imaging method Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 238000001459 lithography Methods 0.000 claims description 7
- 239000002086 nanomaterial Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 206010027646 Miosis Diseases 0.000 claims 1
- 230000000694 effects Effects 0.000 description 6
- 239000011295 pitch Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000001066 destructive effect Effects 0.000 description 4
- 238000005315 distribution function Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/002—Arrays of reflective systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
- G02B19/0019—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors)
- G02B19/0023—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors) at least one surface having optical power
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
- G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
- G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
- G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
- G02B27/425—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application in illumination systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0891—Ultraviolet [UV] mirrors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Optical Elements Other Than Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ??102012010093.0 | 2012-05-23 | ||
| DE102012010093A DE102012010093A1 (de) | 2012-05-23 | 2012-05-23 | Facettenspiegel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201415076A TW201415076A (zh) | 2014-04-16 |
| TWI639850B true TWI639850B (zh) | 2018-11-01 |
Family
ID=49546795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102117653A TWI639850B (zh) | 2012-05-23 | 2013-05-17 | 光瞳組合反射鏡、照明光學單元、照明系統、投射曝光設備、用於產生一微結構或奈米結構元件之方法以及微結構或奈米結構元件 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10599041B2 (https=) |
| JP (1) | JP6504506B2 (https=) |
| CN (1) | CN104335096B (https=) |
| DE (1) | DE102012010093A1 (https=) |
| TW (1) | TWI639850B (https=) |
| WO (1) | WO2013174644A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI705910B (zh) * | 2019-05-16 | 2020-10-01 | 怡利電子工業股份有限公司 | 標靶反射式擴散片抬頭顯示裝置 |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102390697B1 (ko) * | 2013-01-28 | 2022-04-26 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치를 위한 방사선 소스, 거울 및 투영 시스템 |
| DE102015209175A1 (de) * | 2015-05-20 | 2016-11-24 | Carl Zeiss Smt Gmbh | Pupillenfacettenspiegel |
| DE102015209453A1 (de) * | 2015-05-22 | 2016-11-24 | Carl Zeiss Smt Gmbh | Pupillenfacettenspiegel |
| NL2017272A (en) * | 2015-08-25 | 2017-03-01 | Asml Netherlands Bv | Suppression filter, radiation collector and radiation source for a lithographic apparatus; method of determining a separation distance between at least two reflective surface levels of a suppression filter |
| DE102016205624B4 (de) * | 2016-04-05 | 2017-12-28 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die EUV-Projektionslithografie, Beleuchtungssystem, Projektionsbelichtungsanlage und Verfahren zur Projektionsbelichtung |
| US10712671B2 (en) | 2016-05-19 | 2020-07-14 | Nikon Corporation | Dense line extreme ultraviolet lithography system with distortion matching |
| US10890849B2 (en) * | 2016-05-19 | 2021-01-12 | Nikon Corporation | EUV lithography system for dense line patterning |
| US10295911B2 (en) | 2016-05-19 | 2019-05-21 | Nikon Corporation | Extreme ultraviolet lithography system that utilizes pattern stitching |
| US11067900B2 (en) | 2016-05-19 | 2021-07-20 | Nikon Corporation | Dense line extreme ultraviolet lithography system with distortion matching |
| DE102016209359A1 (de) | 2016-05-31 | 2017-11-30 | Carl Zeiss Smt Gmbh | EUV-Kollektor |
| DE102016225563A1 (de) | 2016-12-20 | 2018-06-21 | Carl Zeiss Smt Gmbh | Hohlwellenleiter zur Führung von EUV-Licht mit einer Nutzwellenlänge |
| DE102017205548A1 (de) | 2017-03-31 | 2018-10-04 | Carl Zeiss Smt Gmbh | Optische Baugruppe zum Führen eines Ausgabestrahls eines Freie-Elektronen-Lasers |
| US11934105B2 (en) | 2017-04-19 | 2024-03-19 | Nikon Corporation | Optical objective for operation in EUV spectral region |
| CN110892328B (zh) * | 2017-04-26 | 2022-04-29 | 株式会社尼康 | 反射系统、极紫外线曝光工具、光刻曝光工具及光学系统 |
| TWI763834B (zh) * | 2017-04-26 | 2022-05-11 | 日商尼康股份有限公司 | 反射系統、微影曝光工具、在工件上形成條紋圖案的方法及微器件的製造方法 |
| US11054745B2 (en) | 2017-04-26 | 2021-07-06 | Nikon Corporation | Illumination system with flat 1D-patterned mask for use in EUV-exposure tool |
| WO2018208912A2 (en) * | 2017-05-11 | 2018-11-15 | Nikon Corporation | Illumination system with curved 1d-patterned mask for use in euv-exposure tool |
| US11300884B2 (en) | 2017-05-11 | 2022-04-12 | Nikon Corporation | Illumination system with curved 1d-patterned mask for use in EUV-exposure tool |
| DE102017217867A1 (de) * | 2017-10-09 | 2018-07-26 | Carl Zeiss Smt Gmbh | EUV-Facettenspiegel für eine EUV-Projektionsbelichtungsanlage |
| DE102018216870A1 (de) * | 2018-10-01 | 2020-04-02 | Carl Zeiss Smt Gmbh | Verfahren zum Herstellen eines Beleuchtungssystems für eine EUV-Anlage |
| DE102018220629A1 (de) | 2018-11-29 | 2020-06-04 | Carl Zeiss Smt Gmbh | Spiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage mit einem Spektralfilter in Form einer Gitterstruktur und Verfahren zur Herstellung eines Spektralfilters in Form einer Gitterstruktur auf einem Spiegel |
| DE102019212017A1 (de) | 2019-08-09 | 2021-02-11 | Carl Zeiss Smt Gmbh | Optisches Beleuchtungssystem zur Führung von EUV-Strahlung |
| DE102019129135A1 (de) * | 2019-10-29 | 2021-04-29 | Zumtobel Lighting Gmbh | 3D-Druckverfahren zur Herstellung eines Leuchtenelements mit optischem Teil |
| DE102020208665A1 (de) | 2020-07-10 | 2022-01-13 | Carl Zeiss Smt Gmbh | Optisches Beleuchtungssystem zur Führung von EUV-Strahlung |
| DE102020213837A1 (de) | 2020-11-04 | 2021-08-19 | Carl Zeiss Smt Gmbh | Facettenspiegel-Vorrichtung |
| DE102022207052A1 (de) | 2022-07-11 | 2024-01-11 | Carl Zeiss Smt Gmbh | Spiegel für eine Projektionsbelichtungsanlage |
| US20250216254A1 (en) * | 2024-01-03 | 2025-07-03 | Kla Corporation | Diffractive euv spectral purity filters for optical systems |
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| TW530164B (en) * | 2000-09-29 | 2003-05-01 | Zeiss Stiftung | Illumination system with a grating element |
| US20030086524A1 (en) * | 1998-05-05 | 2003-05-08 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Illumination system particularly for microlithography |
| TW200406822A (en) * | 2002-08-26 | 2004-05-01 | Zeiss Carl Semiconductor Mfg | An attenuator for attenuating wavelengths unequal to a used wavelength |
| US20070132977A1 (en) * | 2005-02-03 | 2007-06-14 | Nikon Corporation | Optical integrator, illumination optical device, exposure device, and exposure method |
| CN1985356A (zh) * | 2004-09-22 | 2007-06-20 | 尼康股份有限公司 | 照明装置、曝光装置及微元件的制造方法 |
| US20090267003A1 (en) * | 2008-04-09 | 2009-10-29 | Komatsu Ltd. | Semiconductor exposure device using extreme ultra violet radiation |
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| US5581605A (en) * | 1993-02-10 | 1996-12-03 | Nikon Corporation | Optical element, production method of optical element, optical system, and optical apparatus |
| US5850300A (en) | 1994-02-28 | 1998-12-15 | Digital Optics Corporation | Diffractive beam homogenizer having free-form fringes |
| DE10138313A1 (de) | 2001-01-23 | 2002-07-25 | Zeiss Carl | Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm |
| US6859515B2 (en) | 1998-05-05 | 2005-02-22 | Carl-Zeiss-Stiftung Trading | Illumination system, particularly for EUV lithography |
| US6573978B1 (en) * | 1999-01-26 | 2003-06-03 | Mcguire, Jr. James P. | EUV condenser with non-imaging optics |
| ATE464585T1 (de) * | 2002-02-09 | 2010-04-15 | Zeiss Carl Smt Ag | Facettenspiegel mit mehreren spiegelfacetten |
| EP1496521A1 (en) * | 2003-07-09 | 2005-01-12 | ASML Netherlands B.V. | Mirror and lithographic apparatus with mirror |
| JP4508708B2 (ja) * | 2004-04-12 | 2010-07-21 | キヤノン株式会社 | Ｅｕｖ光を用いた露光装置および露光方法 |
| WO2006136353A1 (en) * | 2005-06-21 | 2006-12-28 | Carl Zeiss Smt Ag | A double-facetted illumination system with attenuator elements on the pupil facet mirror |
| DE102006036064A1 (de) | 2006-08-02 | 2008-02-07 | Carl Zeiss Smt Ag | Beleuchtungssystem für eine Projektionsbelichtungsanlage mit Wellenlängen ≦ 193 nm |
| US7719661B2 (en) * | 2007-11-27 | 2010-05-18 | Nikon Corporation | Illumination optical apparatus, exposure apparatus, and method for producing device |
| DE102008009600A1 (de) | 2008-02-15 | 2009-08-20 | Carl Zeiss Smt Ag | Facettenspiegel zum Einsatz in einer Projektionsbelichtungsanlage für die Mikro-Lithographie |
| JP5487118B2 (ja) * | 2008-02-15 | 2014-05-07 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィのための投影露光装置に使用するファセットミラー |
| JP5061069B2 (ja) * | 2008-05-20 | 2012-10-31 | ギガフォトン株式会社 | 極端紫外光を用いる半導体露光装置 |
| CN102047151B (zh) * | 2008-05-30 | 2014-07-16 | Asml荷兰有限公司 | 辐射系统、辐射收集器、辐射束调节系统、用于辐射系统的光谱纯度滤光片以及用于形成光谱纯度滤光片的方法 |
| JP2010114344A (ja) * | 2008-11-10 | 2010-05-20 | Nikon Corp | 露光装置、およびデバイス製造方法 |
| DE102009044462A1 (de) | 2009-11-06 | 2011-01-05 | Carl Zeiss Smt Ag | Optisches Element, Beleuchtungssystem und Projektionsbelichtungsanlage |
| JP5637702B2 (ja) * | 2010-03-09 | 2014-12-10 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
| US9372413B2 (en) * | 2011-04-15 | 2016-06-21 | Asml Netherlands B.V. | Optical apparatus for conditioning a radiation beam for use by an object, lithography apparatus and method of manufacturing devices |
| DE102011082065A1 (de) * | 2011-09-02 | 2012-09-27 | Carl Zeiss Smt Gmbh | Spiegel-Array |
| DE102012209882A1 (de) * | 2012-06-13 | 2013-06-13 | Carl Zeiss Smt Gmbh | Spiegel für EUV-Projektionsbelichtungsanlage mit Streufunktion |
-
2012
- 2012-05-23 DE DE102012010093A patent/DE102012010093A1/de not_active Ceased
-
2013
- 2013-05-07 WO PCT/EP2013/059427 patent/WO2013174644A1/en not_active Ceased
- 2013-05-07 JP JP2015513078A patent/JP6504506B2/ja active Active
- 2013-05-07 CN CN201380026836.2A patent/CN104335096B/zh active Active
- 2013-05-17 TW TW102117653A patent/TWI639850B/zh active
-
2014
- 2014-10-31 US US14/529,844 patent/US10599041B2/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030086524A1 (en) * | 1998-05-05 | 2003-05-08 | Carl Zeiss Semiconductor Manufacturing Technologies Ag | Illumination system particularly for microlithography |
| TW530164B (en) * | 2000-09-29 | 2003-05-01 | Zeiss Stiftung | Illumination system with a grating element |
| TW200406822A (en) * | 2002-08-26 | 2004-05-01 | Zeiss Carl Semiconductor Mfg | An attenuator for attenuating wavelengths unequal to a used wavelength |
| TWI318776B (en) * | 2002-08-26 | 2009-12-21 | Zeiss Carl Semiconductor Mfg | A projection exposure system |
| CN1985356A (zh) * | 2004-09-22 | 2007-06-20 | 尼康股份有限公司 | 照明装置、曝光装置及微元件的制造方法 |
| US20070132977A1 (en) * | 2005-02-03 | 2007-06-14 | Nikon Corporation | Optical integrator, illumination optical device, exposure device, and exposure method |
| US20090267003A1 (en) * | 2008-04-09 | 2009-10-29 | Komatsu Ltd. | Semiconductor exposure device using extreme ultra violet radiation |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI705910B (zh) * | 2019-05-16 | 2020-10-01 | 怡利電子工業股份有限公司 | 標靶反射式擴散片抬頭顯示裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201415076A (zh) | 2014-04-16 |
| US10599041B2 (en) | 2020-03-24 |
| CN104335096B (zh) | 2018-08-28 |
| US20150049321A1 (en) | 2015-02-19 |
| WO2013174644A1 (en) | 2013-11-28 |
| CN104335096A (zh) | 2015-02-04 |
| JP6504506B2 (ja) | 2019-04-24 |
| DE102012010093A1 (de) | 2013-11-28 |
| JP2015519009A (ja) | 2015-07-06 |
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