TWI636595B - Light emitting device - Google Patents

Abstract

The invention provides a light-emitting device, which includes a side light-emitting component, a reflection cup arranged on a peripheral side of the side light-emitting component, and a package body encapsulating the side light-emitting component and the reflection cup. The light-measuring component has a side surface, which includes a light-emitting wafer, a wavelength conversion layer covering the light-emitting wafer, and a reflective layer disposed above the wavelength conversion layer. The reflection cup has an inner surface facing one of the side light emitting components. The inner surface of the reflection cup is a multifocal paraboloid. The multifocal paraboloid includes a multi-parabolic paraboloid. The focal points corresponding to the segments of the paraboloid are symmetrically distributed on the sides of the side light-emitting component.

Description

Light emitting device

The invention relates to a light emitting device.

At present, the application of a variety of light-emitting diode products can be seen in life, such as flashlights, projectors, flashlights, or projection lamps. These light emitting diode products often need to reduce the light emitting angle of the light emitting diode so that the light emitted by the light emitting diode is more concentrated. The light emitting angle of the conventional light emitting diode is approximately 120 degrees, and the light emitting angle is relatively large. The light-emitting diode is usually combined with a mirror structure to reduce the angle of light. However, the intervention of the mirror structure easily causes the overall volume of the light-emitting diode product to increase and is not easy to carry, and the light-emitting diode and the mirror structure exist during assembly. The inaccurate alignment causes the light from the light-emitting diode to not concentrate.

Improve the reflective structure in the light-emitting diode products to reduce the volume of the light-emitting diode products and solve the alignment problem. For example, light-emitting diode products mainly include a parabolic reflective structure around the periphery of the light-emitting diode. However, because the light-emitting diode is not an ideal point light source, but is a planar light source or an integrated light source, the reflection structure of a parabolic surface with a single focus still cannot improve the light output angle, and its light-collecting ability is still limited. .

An object of the present invention is to provide a light-emitting device which is thin, has a small light emitting angle, and has concentrated light irradiation.

The invention provides a light-emitting device, which includes a light-emitting component on one side and a side surface, which includes: a light-emitting wafer; a wavelength conversion layer; covering the light-emitting wafer; and a reflection layer disposed on the wavelength conversion layer. Above; a reflection cup is arranged on the peripheral side of the side light-emitting component, the reflection cup has an inner surface facing the side of the side light-emitting component, and the inner surface of the reflection cup is a multifocal paraboloid, The multi-focus paraboloid includes multiple segments of paraboloids, and the focal points corresponding to the segments of the paraboloids are symmetrically distributed on the side of the side light-emitting component; and a package that encapsulates the side light-emitting component and the reflection cup.

In an embodiment, the wavelength conversion layer includes a first outer side facing the inner surface of the reflection cup, and the side of the side light emitting component is located on the first outer side of the wavelength conversion layer.

In an embodiment, the side light emitting component further includes a light guide layer, the light guide layer includes a second outer side facing the inner surface of the reflection cup, and the side of the side light emitting component is located on the light guide. The second outer side of the light layer.

In one embodiment, the light guide layer is disposed between the reflection layer and the wavelength conversion layer, and the light guide layer covers the wavelength conversion layer.

In one embodiment, the light guiding layer is disposed between the light emitting chip and the wavelength conversion layer, and the light guiding layer covers the light emitting chip.

In one embodiment, the material of the reflective layer includes titanium dioxide, tin dioxide or zirconium dioxide.

In one embodiment, the inner surface of the reflective cup is made of a specular reflective material.

In one embodiment, the specular reflection material is a metal material, and the metal material includes gold, silver, aluminum, chromium, copper, tin, or nickel.

In one embodiment, the side light-emitting component has a plurality of light-emitting points, and the focal point of the multi-segment paraboloid is the light-emitting points corresponding to the side light-emitting component.

In an embodiment, the focal length of each paraboloid gradually increases from a direction away from the light emitting chip.

In an embodiment, the side light-emitting component has a symmetrical plane, and the focal points corresponding to the multi-segment paraboloids are symmetrically distributed on an intersection line of the symmetry plane and a side surface of the side light-emitting component.

In one embodiment, the side light-emitting component has a central axis, and the focal points corresponding to the multi-parabolic paraboloids are symmetrically distributed around the center axis of the side of the side light-emitting component.

In one embodiment, adjacent paraboloids are symmetrically distributed.

In one embodiment, the segments of the paraboloid are integrally formed.

In an embodiment, the multi-parabolic paraboloid includes at least three parabolic parabolic surfaces, and the at least three parabolic parabolic surfaces include a first parabolic surface, a second parabolic surface, and a first parabolic surface.

In an embodiment, the focal point of the first paraboloid is located near the bottom position of the light emitting chip, the focal point of the third paraboloid is located near the top position of the wavelength conversion layer, and the focal point of the second paraboloid is located A middle position of a line segment where the focal point of the first paraboloid and the focal point of the third paraboloid are connected.

In one embodiment, the package includes a light emitting surface, and the light emitting surface is a flat surface, an elliptical arc surface, or a semicircular arc surface.

In one embodiment, the package includes a first light guide and a second light guide formed above the first light guide. A first light guide member encapsulates the light-measuring component and the reflection cup.

In one embodiment, the first light guide includes a first light emitting surface, and the first light emitting surface is a flat surface. The first light guide includes a second light emitting surface, and the second light emitting surface is an elliptical arc surface or a semi-circular arc surface.

In an embodiment, the height from the first light emitting surface to the vertex of the second light emitting surface is a, and the width of the first light emitting surface is b, where the value of b / a is 1.4 ≦ b. / a ≦ 2.

Compared with the prior art, the light-emitting device of the present invention is provided with a multi-focus parabolic structure for the reflection cup, and the combination of the reflection cup structure and the side light-emitting component is used, and the focal points corresponding to the multi-focus parabolic surface are symmetrically distributed at A side surface of the side light emitting component. Since most of the light is emitted through the side of the side light-emitting component, the required length of the reflection cup can be reduced, thereby realizing a thin light-emitting device. In addition, due to the multi-focus parabolic structure of the reflection cup, the light emitting device can reduce the divergence angle of the light emitted from the light emitting chip, and the light can be concentratedly illuminated.

100, 200, 300, 400 ‧‧‧ light-emitting devices

10, 10A, 10B, 10C ‧‧‧ side light emitting components

101‧‧‧ side

A1‧‧‧center axis

P1‧‧‧First symmetry plane

P2‧‧‧Second symmetry plane

11, 11A, 11B, 11C‧‧‧light-emitting chips

111‧‧‧ underside

1111‧‧‧ Connection block

112, 112B, 112C ‧‧‧ the first light emitting surface

113, 113B, 113C‧‧‧Second light emitting surface

12, 12A, 12B, 12C‧‧‧ color conversion layer

121, 121A, 141A, 141B, 141C

122, 122A‧‧‧ the first outer side

13, 13A, 13B, 13C‧‧‧Reflective layer

14, 14A, 14B, 14C ‧‧‧ light guide layer

142A, 142B, 142C‧‧‧Second Outer Side

20‧‧‧Reflection Cup

21‧‧‧Inner surface

210‧‧‧ multi-parabolic

211‧‧‧First Paraboloid

212‧‧‧Second Paraboloid

213‧‧‧ Third Paraboloid

F1, F2, F3‧‧‧Focus

L1, L2, L3 ‧‧‧ focal length

30‧‧‧ Package

301‧‧‧light surface

31‧‧‧first light guide

311‧‧‧First light surface

32‧‧‧second light guide

321‧‧‧Second light emitting surface

The present invention will be described by way of example with reference to the accompanying drawings.

FIG. 1 is a schematic diagram of a light-emitting device according to a first embodiment of the present invention, wherein the light-emitting device includes a side light-emitting component and a reflection cup.

FIG. 2A is a schematic diagram of a first embodiment of a side light emitting component in a first embodiment of the present invention.

FIG. 2B is a schematic diagram of a second embodiment of the side light emitting component in the first embodiment of the present invention.

FIG. 2C is a schematic diagram of a third embodiment of the side light emitting device in the first embodiment of the present invention.

FIG. 2D is a schematic diagram of a fourth embodiment of the side light emitting component in the first embodiment of the present invention.

FIG. 3 is a perspective view of a side light emitting assembly and a reflection cup in the first embodiment of the present invention.

FIG. 4 is a schematic diagram of a light path of a light emitting device in a first embodiment of the present invention.

FIG. 5 is a schematic diagram of a light emitting device in a second embodiment of the present invention.

FIG. 6 is a schematic diagram of a light emitting device according to a third embodiment of the present invention.

FIG. 7 is a schematic diagram of a light emitting device in a fourth embodiment of the present invention.

FIG. 8 is a light emission angle test chart of the light emitting device in the first embodiment of the present invention.

In order to have a clearer understanding of the technical features, objectives, and effects of the present invention, specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are a part of the embodiments of the present invention, but not all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

Please refer to FIG. 1, which is a schematic diagram of a light emitting device 100 according to a first embodiment of the present invention. The light-emitting device 100 includes a side light-emitting component 10, a reflection cup 20, and a package 30. The reflection cup 20 is arranged on a peripheral side of the side light emitting component 10 in a ring. The package body 30 encapsulates the side light emitting component 10 and the reflection cup 20.

The side light emitting assembly 10 has a side surface 101 and a central axis A1. The central axis A1 is parallel to the side surface 101. The side surface 101 of the light emitting chip 10 is a mirror-symmetrical pattern. The side surfaces 101 are symmetrically distributed around the central axis A1. Therefore, the light emitted from the light emitting chip 11 can be emitted toward the side surfaces 101 of the side light emitting component 10 more uniformly. The side surface 101 of the side light emitting component 10 has a plurality of light emitting points.

Please refer to FIG. 2A to FIG. 2D together, showing schematic diagrams of the first to fourth embodiments of the side light-emitting component 10 of the light-emitting device 100 in the first embodiment of the present invention. Referring to FIG. 2A, in the first embodiment, the side light emitting device 10 includes a light emitting chip 11, a wavelength conversion layer 12 and a reflection layer 13. The wavelength conversion layer 12 covers the light emitting wafer 11, and the reflection layer 13 is disposed above the wavelength conversion layer 12.

The light-emitting chip 11 is selected from one of a horizontal light-emitting diode, a vertical light-emitting diode, or a flip-chip light-emitting diode. It can be understood that the use of the light emitting chip 11 can be replaced according to the needs of users.

In this embodiment, the light-emitting wafer 11 is a flip-chip light-emitting diode. The light emitting chip 11 emits light with a planar light emitting source, and the light emitting plane includes a first light emitting surface 112 and a second light emitting surface 113 of the light emitting chip 11.

The light-emitting chip 11 includes a bottom surface 111, a first light-emitting surface 112 facing the bottom surface 111, and a second light-emitting surface 113 connecting the bottom surface 111 and the first light-emitting surface 112. The second light emitting surface 113 extends from a peripheral edge of the first light emitting surface 112 toward a bottom surface 111 of the light emitting chip 11.

Two connecting blocks 1111 are vertically downwardly protruded from two opposite sides of the bottom surface 111 of the light-emitting chip 11. The two connecting blocks 1111 are used to electrically connect the light-emitting crystal 11 to an external power source (not shown).

The wavelength conversion layer 12 is used to convert the light emitted from the light emitting chip 11 into a specific wavelength. It can be understood that the wavelength conversion layer 12 can adjust the light wavelength according to the needs of the user.

In this embodiment, the wavelength conversion layer 12 is disposed on the first light emitting surface 112 of the light emitting chip 11 and covers the second light emitting surface 113 of the light emitting chip 11. Therefore, the light emitted from the light emitting chip 11 can be converted into a specific wavelength.

The wavelength conversion layer 12 includes a top surface 121 and a first outer side surface 122 connected to the top surface 121. The first outer side surface 112 extends from a peripheral edge of the top surface 121 toward the light emitting chip 11. The first outer side surface 122 of the wavelength conversion layer 12 is opposite to the second light emitting surface 113 of the light emitting chip 11.

In this embodiment, the first outer side surface 122 of the wavelength conversion layer 12 is parallel to the second light emitting surface 113 of the light emitting chip 11. The side surface 101 of the side light emitting component 10 is located on the first outer side surface 122 of the wavelength conversion layer 12. The reflective layer 13 is disposed on a top surface 121 of the wavelength conversion layer 12.

The material used for the reflective layer 13 is, for example, but not limited to, titanium dioxide (TiO ₂ ), tin dioxide (SiO ₂ ), or zirconium dioxide (ZrO ₂ ).

It can be understood that most of the light emitted by the light emitting chip 11 is reflected by the reflective layer 13, and then the light is emitted through the first outer side 122 of the wavelength conversion layer 12. A small part of the light emitted from the light-emitting chip 11 is directly emitted to the outside of the side light-emitting component 10 through the reflection layer 13, which accounts for about 20% of the light-emitting amount emitted from the light-emitting chip 11. In addition, a small part of the light emitted from the light emitting chip 11 is directly emitted toward the first outer side surface 122 of the wavelength conversion layer 12 through the second light emitting surface 113 of the light emitting chip 11. Since most of the light is emitted to the outside of the side light emitting component 10 through the first outer side surface 122, the required length of the reflection cup 20 can be reduced, thereby realizing a thin light emitting device.

In the present invention, by using the side light emitting component 10 to replace a conventional light emitting diode, the thickness of the package body 30 can be reduced by 30-50%. Therefore, the use of the side light emitting component 10 can realize the thinning of the light emitting device 100.

Please refer to FIG. 2B. In the second embodiment, the structure of the side light emitting device 10A provided in this embodiment is basically the same as that of the first embodiment. The side light emitting device 10A includes a light emitting wafer 11A, a wavelength conversion layer 12A, and a reflective layer 13A. The light emitting wafer 11A and the wavelength conversion The structure of the layer change 12A and the reflection layer 13A is the same as that of the first embodiment, and details are not described herein again. The difference is that the side light emitting component 10A further includes a light guide layer 14A, and the light guide layer 14 is disposed between the reflection layer 13A and the wavelength conversion layer 12A.

The light guide layer 14A includes a top surface 141A and a second outer side surface 142A connected to the top surface 141A. The second outer side surface 142A extends from a peripheral edge of the top surface 141A toward the light emitting chip 11. The second outer side surface 142A of the light guide layer 14A is opposite to the first outer side surface 122A of the wavelength conversion layer 12A.

In this embodiment, the second outer side surface 142A of the light guide layer 14A is parallel to the first outer side surface 122A of the wavelength conversion layer 12A. The reflective layer 13A is disposed on the top surface 141A of the light guide layer 14A, and the light guide layer 14A covers the top surface 121A and the first outer side surface 123A of the wavelength conversion layer 12A. A side surface 101A of the side light emitting component 10A is located on a second outer side surface 142A of the light guide layer 14A.

The material used for the light guide layer 14A is, for example, but not limited to, silicon. Those skilled in the art can understand that it is not limited to silicon glue here, and other light-transmitting materials that can guide the light emitted from the light-emitting chip 11A and have high transparency can also be used in the present invention. The light guide layer 14A can be used to guide the light emitted from the light-emitting chip 11A to a predetermined position, thereby adjusting the irradiation range of the light.

Please refer to FIG. 2C. In the third embodiment, the structure of the side light emitting device 10B provided in this embodiment is basically the same as that of the first embodiment. The side light-emitting component 10B includes a light-emitting wafer 11B, a wavelength conversion layer 12B, and a reflection layer 13B. The structure of the light-emitting wafer 11B, the wavelength conversion layer 12B, and the reflection layer 13B is the same as that of the first embodiment, and details are not described herein again. The difference is that the side light emitting component 10B further includes a light guide layer 14B. The light guide layer 14B is disposed between the light emitting wafer 11B and the wavelength conversion layer 12B.

The light guide layer 14B includes a top surface 141B and a second outer side surface 143B connected to the top surface 141B. The second outer side surface 142B extends from a peripheral edge of the top surface 141B toward the light emitting chip 11B. The second outer side surface 142B of the light guide layer 14B is located between the second light emitting surface 113B of the light emitting chip 11B and the first outer side surface 122A of the wavelength conversion layer 12A.

In this embodiment, the second outer side surface 142B of the light guiding layer 14B is parallel to the second light emitting surface 113B of the light emitting chip 11B and the first outer side surface 122B of the wavelength conversion layer 12B, respectively. The wavelength conversion layer 12 covers a top surface 141B and a second outer surface 143B of the light guide layer 14B. The light guide layer 14B covers the light emitting surface 113B and the second light emitting surface 113B of the light emitting chip 11B. A side surface 101B of the side light emitting component 10B is located on a first outer side surface 122B of the wavelength conversion layer 12B.

The material used for the light guide layer 14B is, for example, but not limited to, silicon. Those skilled in the art can understand that it is not limited to silicon glue here, and other light-transmitting materials that can guide the light emitted by the light-emitting chip 11B and have high transparency can also be used in the present invention. The light guide layer 14B can be used to guide the light emitted from the light-emitting chip 11B to a predetermined position, thereby adjusting the irradiation range of the light.

Please refer to FIG. 2D. In the fourth embodiment, the structure of the side light emitting device 10C provided in this embodiment is basically the same as that of the first embodiment. The side light emitting component 10C includes a light emitting wafer 11C, a wavelength conversion layer 12C, and a reflective layer 13C. The structure of the light-emitting wafer 11C, the wavelength conversion layer 12C, and the reflection layer 13C is the same as that of the first embodiment, and details are not described herein again. The difference is that the side light emitting component 10C further includes a light guide layer 14C, and the light guide layer 14C is disposed on the light emitting surface 113C of the light emitting wafer 11C.

The light guide layer 14C includes a top surface 141C and a second outer side surface 143C connected to the top surface 141C. The second outer side surface 142C approaches the light emitting chip from a peripheral edge of the top surface 141C. 11C direction. The second outer side surface 142C of the light guide layer 14C is flush with the second light emitting surface 113C of the light emitting chip 11C, and is opposite to the first outer side surface 122C of the wavelength conversion layer 12C.

In this embodiment, the second outer side surface 142C of the light guide layer 14C is parallel to the first outer side surface 122C of the wavelength conversion layer 12C. The wavelength conversion layer 12C covers the second light emitting surface 113C of the light emitting wafer 11C, the top surface 141C and the second outer side surface 143C of the light guide layer 14C. A side surface 101C of the side light emitting component 10C is located on a first outer side surface 122C of the wavelength conversion layer 12C.

The material used for the light guide layer 14C is, for example, but not limited to, silicon. Those skilled in the art can understand that it is not limited to silicon glue here, and other light-transmitting materials that can guide the light emitted from the light-emitting chip 11C and have high transparency can also be used in the present invention. The light guide layer 14C can be used to guide the light emitted from the light-emitting chip 11C to a predetermined position, thereby adjusting the irradiation range of the light.

Referring to FIG. 3, in this embodiment, the side light-emitting component 10 has a first symmetrical plane P1 and a second symmetrical plane P2, and the first symmetrical plane P1 and the second symmetrical plane P2 are perpendicular to each other. The central axis A1 is an intersection line between the first symmetry plane P1 and the second symmetry plane P2.

The reflection cup 20 is a bowl-shaped body with a multifocal paraboloid. The width of the cross-section of the reflection cup 20 is gradually increased from the direction away from the light-emitting chip 11 to improve the light-emitting efficiency of the light-emitting device 100.

The reflection cup 20 has an inner surface 21 facing the side surface 101 of the side light-emitting component 10. The inner surface 21 of the reflection cup 20 is made of a specular reflection material. The specular reflection material is a metal material. The metal material is, for example, but is not limited to, gold, silver, aluminum, chromium, copper, tin, or nickel.

The inner surface 21 includes a plurality of parabolic surfaces 210. The multi-parabolic surface 210 has a plurality of focal points. The plurality of focal points are arranged symmetrically and spaced apart, that is, the plurality of focal points do not overlap each other. The plurality of focal points all fall on the side surface 101 of the side light emitting component 10.

Preferably, a plurality of focal points of the multi-segment parabolic surface 210 are symmetrically distributed on an intersection line between the side surface 101 of the side light emitting component 10 and the symmetry plane. Therefore, the light emitted from the light emitting device 100 can be uniformly irradiated to the outside.

In this embodiment, a plurality of focal points of the multi-parabolic paraboloid 210 are symmetrically distributed on the intersection line of the side surface 101 of the light emitting chip 10 and the first symmetry plane P1, and / or the side surface 101 of the light emitting chip 10 On the line of intersection with the second symmetry plane P2.

It can be understood that the focal length of each parabolic surface 210 gradually increases from the direction away from the light-emitting chip 11 to achieve a better light-concentrating effect.

It can be understood that the focal point of the multi-segment parabolic surface 210 is the light emitting point of the side light emitting component 10. Therefore, after the light emitted from the light-emitting chip 11 is reflected by the multiple parabolic surfaces 210 of the reflection cup 20, a better light-concentrating effect can be obtained.

Please refer to FIG. 3 and FIG. 4 together. The parabolic surface 210 of each segment has two symmetrical focal points and two symmetrical focal lengths from a longitudinal section of the symmetry plane. The focal point corresponding to the multi-parabolic surface 210 is symmetrically distributed around the central axis A1 of the side surface 101 of the side light emitting component 10. The focal points corresponding to the plurality of parabolic surfaces 210 are respectively linearly arranged along the direction of the central axis A1 of the side surfaces 10 of the side light-emitting components 10. Specifically, each focal point corresponding to the plurality of parabolic surfaces 210 forms a straight line on both sides facing the reflection cup 20 respectively. The focal lengths of the multi-parameter paraboloids 210 from directions away from the side light-emitting component 10 are different from each other. Adjacent paraboloids 210 are symmetrically distributed. The parabolic surfaces 210 of each segment are integrally formed.

Preferably, the inner surface 21 includes at least three parabolic surfaces 210. The at least three parabolic surfaces 210 include a first parabolic surface 211, a second parabolic surface 212 and a third parabolic surface 213. All The first parabolic surface, the second parabolic surface 212 and the third parabolic surface 213 are sequentially arranged from a direction away from the light emitting chip 11. The first paraboloid, the second paraboloid 212 and the third paraboloid 213 are symmetrically distributed on the central axis A1.

In this embodiment, a longitudinal section of the first parabolic surface 211 from the first symmetrical plane P1 or the second symmetrical plane P2 has two symmetrical focal points F1 and two symmetrical focal lengths L1. The longitudinal section of the first symmetry plane P1 or the second symmetry plane P2 has two symmetrical focal points F2 and two symmetrical focal lengths L2. The third paraboloid 213 extends from the longitudinal direction of the first symmetry plane P1 or the second symmetry plane P2. The tangent plane has two symmetrical focal points F3 and two symmetrical focal lengths L3, where focal length L3> focal length L2> focal length L1. The focal points F1, F2, and F3 all fall on the intersection line of the first outer side surface 122 of the wavelength conversion layer 12 and the first symmetrical plane P1 and the second symmetrical plane P2, and the focal points F1, F2 And F3 are linearly arranged, that is, the focal points F1, F2, and F3 are connected into a straight line. The straight line is parallel to the central axis A1 of the side light emitting component 10.

In one embodiment, the focus F1 is located near the bottom of the light-emitting wafer 11; the focus F3 is located near the top of the wavelength conversion layer 12; and the focus F2 is located in the focus 1 and the focus The middle position of the segment where Focus 2 is connected. Therefore, the light emitted from the light-emitting chip 11 is emitted from the first outer side surface 122 of the wavelength conversion layer 12 and is irradiated toward the multifocal paraboloid of the reflection cup 20, and the angle of light emission of the reflected light will become smaller.

In another embodiment, the focal point F1 is located near the bottom position of the light emitting chip 11B; the focal point F3 is located near the top position of the light guide layer 14B; and the focal point F2 is located in the focal point 1 and the focal point The middle position of the line segment of the focus 2 is described. Therefore, the light emitted from the light-emitting wafer 11B is emitted from the first outer side surface 122B of the wavelength conversion layer 12B and is irradiated toward the multifocal paraboloid of the reflection cup 20, and the angle of light emitted by the reflected light becomes smaller.

The light emitting angle of the light emitting device 100 is less than 20 degrees.

It can be understood that the design of the shape of the multi-parabolic paraboloid 210 is calculated according to different positions of the light-emitting chip 11 and different requirements for multiple light emission. The focal point corresponding to the multi-parabolic paraboloid 210 is neutrally symmetrical, and the side light emitting component 10 is disposed at a symmetrical center position of the focal point corresponding to the multi-parabolic paraboloid 210 so that the focal point corresponding to the multi-parabolic paraboloid 210 falls on the side The side 101 of the light-emitting component 10.

Further, a light emitting chip 11 of a suitable size and shape can be selected according to the shape of the reflector cup 20, so that the light is more uniform and fully utilized. According to the shape of the light-emitting chip 11, different parabolic surfaces 210 with different segments can be selected, and the length and opening of the required multi-parabolic surfaces 210 can be adjusted to achieve better illumination of the emitted light.

The package body 30 covers the side light emitting component 10 and the reflection cup 20. The package body 30 is a light guide. In this embodiment, the package body 30 is filled on both sides of the reflection cup 20, and the side light-emitting component 10 and the reflection cup 20 are sealed to form a specific shape, such as a rectangular parallelepiped or a cube.

The package body 30 is used for fixing the side light emitting component 10 and the reflection cup 20 and adjusting the relative positions of the side light emitting component 10 and the reflection cup 20. In other words, the reflection cup 20 is disposed at a predetermined position via the package body 30 so that the focal point corresponding to the multi-parabolic paraboloid 210 falls on the side surface 101 of the side light-emitting component 10. The package body 30 can also be used to guide the light emitted from the light-emitting chip 11 to a predetermined position, and then adjust the irradiation range of the light.

The material used for the package body 30 is, for example, but not limited to, silicon. Those skilled in the art can understand that it is not limited to silicon glue here. Other light-transmitting materials that can seal the side light-emitting component 10 and the reflection cup 20 and have high transparency can also be used in the present invention.

The top of the package body 30 is provided with a light emitting surface 301 facing the light emitting surface 113 of the light emitting chip 11.

In order to further improve the light emitting efficiency of the light emitting device 100, the light emitting surface 301 is, for example, but not limited to, a flat surface, an elliptical arc surface, or a semicircular arc surface.

Preferably, the light emitting surface 301 is an elliptical arc surface or a semi-circular arc surface, so that the light emitted from the light emitting chip 11 without contacting the reflection cup 20 is refracted, so that the light emitted from the light emitting device 100 can be made More focused.

It can be understood that the bottom of the light emitting surface 301 of the package body 30 is flush with the top of the reflection cup 20 or higher than the top of the reflection cup 20. Therefore, the light emitted by the light emitting chip 11 can accurately reach the preset positions of the multi-parabolic paraboloids 210 of the reflection cup 20 through the package body 30, so that the light emitted by the light emitting device 100 is more concentrated. The reflection cup 20 and the side light emitting component 10 are packaged via the package body 30, so as to achieve accurate alignment between the reflection cup 20 and the side light emitting component 10.

In this embodiment, the light emitting surface 301 is a plane, and the light emitting surface 210 is flush with the top of the reflection cup 20 to further reduce the size of the light emitting device 100.

Please refer to FIG. 4, a light path diagram of the light emitting device 100 provided by the present invention. After the light emitted from the light emitting chip 11 is reflected by the reflection layer 13 of the side light emitting component 10, the reflected light is emitted from the first outer side of the wavelength conversion layer 12 toward the inner surface 21 of the reflection cup 20, Then, after the light is reflected by the multiple parabolic surfaces 210 of the reflection cup 20, the light output angle will become smaller, and the reflected light is emitted from the light output surface 301 of the package 30. Therefore, the light emitting device 100 can reduce the divergence angle of the light emitted from the light emitting chip 11, and the light can be concentratedly illuminated.

Please refer to FIG. 5, which is a schematic diagram of a light emitting device 200 according to a second embodiment of the present invention. The structure of the light emitting device 200 provided in this embodiment is basically the same as that of the first embodiment. The light-emitting device 200 includes a side light-emitting component 10, a reflection cup 20, and a package 30. The side light emitting component 10 The structures of the reflection cup 20 and the package body 30 are basically the same as those of the first embodiment, and details are not described herein again. The difference is that the light emitting surface 301 of the package body 30 is a semi-circular arc surface.

The bottom of the semi-circular arc surface is flush with the top of the reflection cup 20. The degree height from the bottom of the semicircular arc surface to the vertex of the semicircular arc surface is a, and the width of the bottom of the semicircular arc surface is b, where b / a is 2.

It can be understood that, in this embodiment, the side light emitting component 10 is applicable to the first to fourth embodiments of the side light emitting component 10 in the first embodiment or a combination thereof.

Please refer to FIG. 6, which is a schematic diagram of a light emitting device 300 according to a third embodiment of the present invention. The structure of the light emitting device 300 provided in this embodiment is basically the same as that of the first embodiment. The light-emitting device 300 includes a side light-emitting component 10, a reflection cup 20 and a package 30. The structure of the reflection cup 20 and the package body 30 of the side light-emitting component 10 are basically the same as those of the first embodiment, and details are not described herein again. The difference is that the light-emitting surface 301 of the package 30 is a semi-elliptical arc surface.

The bottom of the semi-elliptical arc surface is flush with the top of the reflection cup 20. The height from the bottom of the semi-elliptical arc surface to the vertex of the semi-elliptical arc surface is a, and the width of the bottom of the semi-elliptical arc surface is b, where the value of b / a is between 1.4 and 2 ( 1.4 ≦ b / a <2).

It can be understood that, in this embodiment, the side light emitting component 10 is applicable to the first to fourth embodiments of the side light emitting component 10 in the first embodiment or a combination thereof.

Please refer to FIG. 7, which is a schematic diagram of a light emitting device 400 according to a fourth embodiment of the present invention. The structure of the light emitting device 400 provided in this embodiment is basically the same as that of the first embodiment. The light-emitting device 400 includes a side light-emitting component 10, a reflection cup 20, and a package 30. The structure of the reflection cup 20 and the package body 30 of the side light-emitting component 10 are basically the same as those of the first embodiment, and details are not described herein again. The difference is that the package 30 includes a first light guide 31 and a second light guide 32, and the second light guide 32 is disposed above the first light guide 31.

The first light guide 31 includes a first light emitting surface 311. The first light emitting surface 311 is, for example, but is not limited to a plane.

The second light guide 32 includes a second light emitting surface 321, and two pairs of the second light emitting surface 321 are correspondingly connected to both ends of the first light emitting surface 311. The second light emitting surface 321 is, for example, but not limited to, a half-elliptical arc surface or a half-arc surface.

It can be understood that the first light emitting surface 311 is flush with the top of the reflection cup 20. The height from the vertex of the first light emitting surface 311 to the second light emitting surface 321 is a, and the width of the first light emitting surface 311 is b, where the value of b / a is between 1.4 and 2 (1.4 ≦ b / a ≦ 2).

It can be understood that, in this embodiment, the side light emitting component 10 is applicable to the first to fourth embodiments of the side light emitting component 10 in the first embodiment or a combination thereof.

Please refer to FIG. 8, a light emission angle test chart of the light emitting device 100 in the first embodiment of the present invention. The light-emitting device 100 of the present invention simulates a light angle test at 0 and 90 degree angle directions, where 0 degree means that the tester performs a light-angle simulation test using a certain side of the side light-emitting component 10 (first measurement position), 90 The degree represents a simulation test of the light output angle after being rotated 90 degrees from the first measurement position. The test results show that the light emitting angle of the light emitting device is less than 20 degrees. Since the light emitting angle of the light emitting device is reduced, the light emitted by the light emitting device is more concentrated, so that the light emitted by the light emitting device 100 can be irradiated to a greater distance. Further, the light emitting device can be applied to a high beam.

The embodiments shown and described above are merely examples. Therefore, many such details are neither shown nor described. Although many features and advantages of the present invention have been explained in the foregoing description, together with details of the structure and function of the present invention, the present invention is only illustrative and can be changed in details, including shapes and arrangement of elements Is within the scope of the principles of this disclosure and includes the full scope established by the broad meaning of terms used in the claims. Therefore, it can be understood that the above embodiments can be modified within the scope of the claims.

Claims (20)

A light-emitting device includes: a light-emitting component on one side, and a side surface, including: a light-emitting wafer; a wavelength conversion layer; covering the light-emitting wafer; and a reflection layer disposed above the wavelength conversion layer A reflection cup, which is arranged on the peripheral side of the side light-emitting component, the reflection cup has an inner surface facing the side of the side light-emitting component, and the inner surface of the reflection cup is a multifocal paraboloid, the The multifocal paraboloid includes a plurality of paraboloids, the focal points corresponding to the paraboloids of each segment are symmetrically distributed on the side of the side light emitting component; and a package body that encapsulates the side light emitting component and the reflection cup. The light-emitting device according to item 1 of the scope of patent application, wherein the wavelength conversion layer includes a first outer side facing the inner surface of the reflection cup, and the side of the side light-emitting component is located on the wavelength conversion layer. First outer side. The light-emitting device according to item 1 of the patent application scope, wherein the side light-emitting component further includes a light guide layer, the light guide layer includes a second outer side facing the inner surface of the reflection cup, and A side surface of the side light emitting component is located on a second outer surface of the light guide layer. The light-emitting device according to item 3 of the scope of patent application, wherein the light guide layer is disposed between the reflection layer and the wavelength conversion layer, and the light guide layer covers the wavelength conversion layer. The light-emitting device according to item 3 of the scope of patent application, wherein the light-guiding layer is disposed between the light-emitting wafer and the wavelength conversion layer, and the light-guiding layer covers the light-emitting wafer. The light-emitting device according to item 1 of the scope of patent application, wherein the material of the reflective layer comprises titanium dioxide, tin dioxide or zirconium dioxide. The light-emitting device according to item 1 of the scope of patent application, wherein the inner surface of the reflection cup is made of a specular reflection material. The light-emitting device according to item 7 of the scope of patent application, wherein the light-emitting device according to item 1 of the scope of patent application, wherein the specular reflection material is a metal material, and the metal material includes gold, silver, aluminum, Chromium, copper, tin or nickel. The light-emitting device according to item 1 of the patent application scope, wherein the side light-emitting component has a plurality of light-emitting points, and the focal point of the multi-segment paraboloid is the light-emitting point corresponding to the side light-emitting component. The light-emitting device according to item 1 of the scope of patent application, wherein the focal length of each paraboloid gradually increases from a direction away from the light-emitting wafer. The light-emitting device according to item 1 of the patent application scope, wherein the side light-emitting component has a symmetrical plane, and the focal points corresponding to the multi-segment paraboloids are symmetrically distributed at the intersection of the symmetry plane and the side surface of the side light-emitting component. on-line. The light-emitting device according to item 1 of the patent application scope, wherein the side light-emitting component has a central axis, and the focal point corresponding to the multi-parabolic parabola is symmetrically distributed around the side axis of the side light-emitting component. The light-emitting device according to item 1 of the patent application scope, wherein adjacent paraboloids are symmetrically distributed. The light-emitting device according to item 1 of the scope of patent application, wherein the paraboloids of each segment are integrally formed. The light-emitting device according to item 1 of the scope of patent application, wherein the multi-segment parabolic surface includes at least three parabolic surfaces, and the at least three-segment parabolic surface includes a first paraboloid, a second paraboloid, and a first paraboloid. The light-emitting device according to item 15 of the scope of patent application, wherein the focus of the first paraboloid is located near the bottom position of the light-emitting wafer, and the focus of the third paraboloid is located near the top position of the wavelength conversion layer. And the focal point of the second paraboloid is located in the middle of a line segment where the focal point of the first paraboloid and the focal point of the third paraboloid are connected. The light-emitting device according to item 1 of the patent application scope, wherein the package includes a light emitting surface, and the light emitting surface is a flat surface, an elliptical arc surface, or a semicircular arc surface. The light-emitting device according to item 1 of the patent application scope, wherein the package includes a first light-guiding member and a second light-guiding member formed above the first light-guiding member, and the light-measuring component And the reflection cup is encapsulated in the first light guide. The light-emitting device according to item 18 of the scope of patent application, wherein the first light guiding member includes a first light emitting surface, the first light emitting surface is a flat surface, and the second light guiding member includes a second light emitting surface. Surface, the first light emitting surface is an elliptical arc surface or a semi-circular arc surface. The light-emitting device according to item 19 of the scope of patent application, wherein the height from the first light emitting surface to the vertex of the second light emitting surface is a, and the width of the first light emitting surface is b, where b / The range of the value of a is 1.4 ≦ b / a ≦ 2.