CN108709100A - light emitting device - Google Patents
light emitting device Download PDFInfo
- Publication number
- CN108709100A CN108709100A CN201810269901.9A CN201810269901A CN108709100A CN 108709100 A CN108709100 A CN 108709100A CN 201810269901 A CN201810269901 A CN 201810269901A CN 108709100 A CN108709100 A CN 108709100A
- Authority
- CN
- China
- Prior art keywords
- light
- emitting device
- paraboloid
- luminescence component
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 55
- 238000004806 packaging method and process Methods 0.000 claims abstract description 32
- 238000004020 luminiscence type Methods 0.000 claims description 89
- 230000003287 optical effect Effects 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 19
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000741 silica gel Substances 0.000 description 8
- 229910002027 silica gel Inorganic materials 0.000 description 8
- 230000003760 hair shine Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000012141 concentrate Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 239000000571 coke Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
- F21V19/0015—Fastening arrangements intended to retain light sources
- F21V19/002—Fastening arrangements intended to retain light sources the fastening means engaging the encapsulation or the packaging of the semiconductor device
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V7/00—Reflectors for light sources
- F21V7/04—Optical design
- F21V7/06—Optical design with parabolic curvature
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention provides a light-emitting device, which comprises a side light-emitting component, a reflecting cup arranged around the side light-emitting component, and a packaging body for packaging the side light-emitting component and the reflecting cup. The side light-emitting component is provided with a side surface and comprises a light-emitting chip, a wavelength conversion layer covering the light-emitting chip and a reflecting layer arranged above the wavelength conversion layer. The reflector cup has an inner surface facing the side emitting assembly. The inner surface of the reflecting cup is a multi-focus paraboloid. The multifocal paraboloids comprise multiple sections of paraboloids. The corresponding focal points of each section of paraboloid are symmetrically distributed on the side surface of the side light-emitting component.
Description
Technical field
The present invention is to be related to a kind of light-emitting device.
Background technology
Currently, the application in life that can see light-emitting diode pipe commodity of all kinds, such as flashlight, throwing
Shadow instrument, flash lamp or projecting lamp etc..These light-emitting diode commodity generally require to reduce the light-emitting angle of light-emitting diode, with
The light that light-emitting diode is sent out is set more to concentrate.Substantially 120 degree of the light-emitting angle of the light-emitting diode of tradition, beam angle
It spends larger.Its light-emitting diode usually arranges in pairs or groups mirror structure to reduce light-emitting angle, however the intervention of mirror structure is easily made
Increase without portable at the overall volume of light-emitting diode commodity, and light-emitting diode exists with mirror structure in assembling
The light that contraposition is inaccurate and light-emitting diode is caused to send out is not concentrated.
It improves the catoptric arrangement in light-emitting diode commodity and is asked with reducing the volume of light-emitting diode commodity and solving contraposition
Topic.For example, light-emitting diode commodity in the week side ring of light-emitting diode mainly by setting the catoptric arrangement in paraboloid.So, by
It is not the point light source of ideal in light-emitting diode, and is a planar light source or is integrated light source, therefore, the throwing with single focus
The catoptric arrangement of object plane cannot still improve light-emitting angle well, and its light gathering is still limited.
Invention content
In view of the foregoing, one of present invention purpose is to provide slim, the small light-emitting angle of one kind and light irradiation is concentrated
Light-emitting device.
The present invention provides a kind of light-emitting device comprising：
Side luminescence component has one side comprising：
One luminescent wafer；
One wavelength conversion layer；It is coated on the luminescent wafer；And
One reflecting layer is set on the wavelength conversion layer；
One reflector, is located on the side of the side luminescence component, and the reflector has towards the side luminescence component
Side an inner surface, the inner surface system of the reflector is multifocal point parabolic, and the multifocal point parabolic includes multistage
Paraboloid, the focus of each section of paraboloid correspondence are symmetrically dispersed in the side of the side luminescence component；And
One packaging body encapsulates the side luminescence component and the reflector.
In one embodiment, the wavelength conversion layer includes one first lateral surface of the inner surface towards the reflector,
The side of the side luminescence component is located at the first lateral surface of the wavelength conversion layer.
In one embodiment, the side luminescence component further includes an optical waveguide layer, and the optical waveguide layer includes towards the reflection
One second lateral surface of the inner surface of cup, the side of the side luminescence component are located at the second lateral surface of the optical waveguide layer.
In one embodiment, the optical waveguide layer is set between the reflecting layer and the wavelength conversion layer, and described is led
Photosphere coats the wavelength conversion layer.
In one embodiment, the optical waveguide layer is set between the luminescent wafer and the wavelength conversion layer, and described
Optical waveguide layer coats the luminescent wafer.
In one embodiment, the material in the reflecting layer includes titanium dioxide, stannic oxide or zirconium dioxide.
In one embodiment, the inner surface of the reflector is made of a specular reflective material.
In one embodiment, the specular reflective material be metal material, the metal material include gold, silver, aluminium, chromium,
Copper, tin or nickel.
In one embodiment, the side luminescence component is with a plurality of luminous points, the focus system of the multistage paraboloid
The corresponding luminous point of the side luminescence component.
In one embodiment, the focal length of each section of paraboloid is gradually increased from the direction far from the luminescent wafer.
In one embodiment, the side luminescence component has a symmetrical plane, the corresponding focus pair of the multistage paraboloid
It is distributed in the symmetrical plane with claiming and the intersection of the side of the side luminescence component is online.
In one embodiment, the side luminescence component has a central axis, the focus of the multistage paraboloid correspondence in
The side of the side luminescence component is symmetric around the central axis.
In one embodiment, adjacent paraboloid is symmetric.
In one embodiment, it is seamlessly transitted between each multistage paraboloid, and is to be integrally formed between each section of paraboloid.
In one embodiment, the multistage paraboloid includes at least three sections of paraboloids, and at least three sections of paraboloids include
First paraboloid, the second paraboloid and the first paraboloid.
In one embodiment, the focus of first paraboloid is located at the bottom position close to the luminescent wafer, described
The focus of third paraboloid is located at the top position close to the wavelength conversion layer, and the focus of second paraboloid is located at institute
State the centre position for the line segment that the first paraboloidal focus and the paraboloidal focus of the third are linked to be.
In one embodiment, the packaging body includes a light-emitting surface, light-emitting surface system plane, elliptical arc surface or semi arch
Face.
In one embodiment, the packaging body includes that one first light guide and one second light guide are formed in described first and lead
On light part.First light guide encapsulates the survey luminescence component and the reflector.
In one embodiment, first light guide includes one first light-emitting surface, and first light-emitting surface is plane.It is described
First light guide includes one second light-emitting surface, and second light-emitting surface is elliptical arc surface or semicircle cambered surface.
In one embodiment, the height on first light-emitting surface to the vertex of second light-emitting surface is a, and described first goes out
The width of smooth surface is b, wherein ranging from 1.4≤b/a≤2 of the value of b/a.
Compared to the prior art, the light-emitting device of the present invention by reflector be equipped with multifocal paraboloid structure, and
By the reflection cup structure and side luminescence component united application, and the focus of the multifocal point parabolic correspondence is made to be symmetrically distributed
In the side of the side luminescence component.Since the light of major part is projected via the side of the side luminescence component, therefore reflector
Required length can reduce, to realize thin light-emitting device.Further, since the multifocal point parabolic knot of the reflector
Structure, therefore the light-emitting device can reduce the dispersion angle for the light that the luminescent wafer is sent out, and the light can be concentrated
Irradiation.
Description of the drawings
The present invention will be described with reference to the drawings by way of example.
The schematic diagram of light-emitting device in Fig. 1 systems first embodiment of the invention, wherein the light-emitting device includes side hair
Optical assembly and a reflector.
The schematic diagram of the first embodiment of the side luminescence component in Fig. 2A systems first embodiment of the invention.
The schematic diagram of second of embodiment of the side luminescence component in Fig. 2 B systems first embodiment of the invention.
The schematic diagram of the third embodiment of the side luminescence component in Fig. 2 C systems first embodiment of the invention.
The schematic diagram of 4th kind of embodiment of the side luminescence component in Fig. 2 D systems first embodiment of the invention.
The perspective view of side luminescence component and reflector in Fig. 3 systems first embodiment of the invention.
The opticpath schematic diagram of light-emitting device in Fig. 4 systems first embodiment of the invention.
The schematic diagram of light-emitting device in Fig. 5 systems second embodiment of the invention.
The schematic diagram of light-emitting device in Fig. 6 systems third embodiment of the invention.
The schematic diagram of light-emitting device in Fig. 7 systems fourth embodiment of the invention.
The light-emitting angle test chart of light-emitting device in Fig. 8 systems first embodiment of the invention.
Main element symbol description
Following specific implementation mode will be further illustrated the present invention in conjunction with above-mentioned attached drawing.
Specific implementation mode
For a clearer understanding of the technical characteristics, objects and effects of the present invention, it is described in detail in conjunction with attached drawing
The specific implementation mode of the present invention.Obviously, described embodiment is a part of the embodiment of the present invention, rather than whole realities
Apply example.Based on the embodiments of the present invention, those of ordinary skill in the art are obtained without making creative work
Every other embodiment, belong to protection scope of the present invention.
Referring to Fig. 1, its schematic diagram for the light-emitting device 100 of the first embodiment of the present invention.The light-emitting device 100
Including side luminescence component 10, a reflector 20 and a packaging body 30.The reflector 20 is located on the side luminescence component 10
Side.The packaging body 30 encapsulates the side luminescence component 10 and the reflector 20.
The side luminescence component 10 has one side 101 and a central axis A1.The central axis A1 and the side
101 is parallel.The side 101 of the luminescent wafer 10 is a mirror image.The side 101 is around the central axis A1
It is symmetric, therefore, the light that the luminescent wafer 11 is sent out can be more uniformly towards the side of the side luminescence component 10
101 project.The side 101 of the side luminescence component 10 has a plurality of luminous points.
Also referring to Fig. 2A to Fig. 2 D, the luminous group in side of the light-emitting device 100 in first embodiment of the invention is illustrated
The first embodiment of part 10 to the 4th embodiment schematic diagram.Fig. 2A is please referred to, in the first embodiment, the side hair
Optical assembly 10 includes a luminescent wafer 11, a wavelength conversion layer 12 and a reflecting layer 13.The wavelength conversion layer 12 coats described
Luminescent wafer 11, the reflecting layer 13 are arranged on the wavelength conversion layer 12.
The luminescent wafer 11 is selected from horizontal light-emitting diode, vertical light-emitting diode or crystal covering type light-emitting diode
Middle one kind.It should be understood that the use of the luminescent wafer 11 can be replaced according to the demand of user.
In the present embodiment, the luminescent wafer 11 is crystal covering type light-emitting diode.11 system of the luminescent wafer is flat with one
Face light emitting source emits light, and the luminous flat includes the first light-emitting surface 112 and the second light-emitting surface of the luminescent wafer 11
113。
The luminescent wafer 11 includes one first light-emitting surface 112 of bottom surface 111 described in a bottom surface 111, face and connection institute
State one second light-emitting surface 113 of bottom surface 111 and first light-emitting surface 112.Second light-emitting surface 113 shines from described first
The periphery in face 112 extends towards close to 111 direction of bottom surface of the luminescent wafer 11.
Both sides vertically downward projection two link block 1111 opposite from the bottom surface of the luminescent wafer 11 111.Described two connect
Block 1111 is connect for the luminescent wafer 11 and an external power supply (not shown) to be electrically connected.
The light that the luminescent wafer 11 is sent out for being converted to specific wavelength by the wavelength conversion layer 12.It can manage
Solution, the wavelength conversion layer 12 can carry out wavelength of light adjustment according to the demand of user.
In the present embodiment, the wavelength conversion layer 12 is arranged on the first light-emitting surface 112 of the luminescent wafer 11, and
Coat the second light-emitting surface 113 of the luminescent wafer 11.Therefore, the light that the luminescent wafer 11 is sent out can be transformed into specific
Wavelength.
The wavelength conversion layer 12 includes a top surface 121 and connects the first lateral surface 122 of the top surface 121.Described
One lateral surface 122 extends from the periphery of the top surface 121 towards close to the direction of the luminescent wafer 11.The wavelength conversion layer 12
The first lateral surface 122 it is opposite with the second light-emitting surface 113 of the luminescent wafer 11.
In the present embodiment, the first lateral surface 122 of the wavelength conversion layer 12 is parallel to the of the luminescent wafer 11
Two light-emitting surfaces 113.The side 101 of the side luminescence component 10 is located at the first lateral surface 122 of the wavelength conversion layer 12.It is described
Reflecting layer 13 is arranged in the top surface of the wavelength conversion layer 12 121.
The reflecting layer 13 using material be, for example, but to be not limited to, titanium dioxide (TiO2), stannic oxide
(SiO2) or zirconium dioxide (ZrO2).
It should be understood that the light that the luminescent wafer 11 is sent out is most of via the reflection of the reflecting layer 13, then via
First lateral surface 122 of the wavelength conversion layer 12 projects light.The light small part that the luminescent wafer 11 is sent out is via institute
It states reflecting layer 13 directly to project to the external of the side luminescence component 10, accounts for about the hair that 20% luminescent wafer 11 is sent out
Light quantity.In addition, the light small part that the luminescent wafer 11 is sent out is directly via the second light-emitting surface 113 of the luminescent wafer 11
The first lateral surface 122 towards the wavelength conversion layer 12 projects.Since the light of major part is via 122 court of the first lateral surface
The outside of the side luminescence component 10 is projected, and therefore, can reduce the length needed for reflector 20, to realize that thin-type light emitting fills
It sets.
The present invention replaces traditional light-emitting diode, the thickness of the packaging body 30 by using the side luminescence component 10
30-50% can be reduced, therefore can realize the slimming of light-emitting device 100 with the side luminescence component 10.
Please refer to Fig. 2 B, in this second embodiment, the present embodiment provides side luminescence component 10A and first embodiment
Structure it is almost the same.The side luminescence component 10A includes a luminescent wafer 11A, a wavelength conversion layer 12A and a reflecting layer
13A.The structure of the luminescent wafer 11A, the wavelength conversion layer 12A and the reflecting layer 13A and the first embodiment
Unanimously, details are not described herein.Unlike, the side luminescence component 10A further includes an optical waveguide layer 14A, and the optical waveguide layer 14A is set
It sets between the reflecting layer 13A and the wavelength conversion layer 12A.
The optical waveguide layer 14A includes a top surface 141A and connects the second lateral surface 142A of the top surface 141A.Described
Two lateral surface 142A extend from the periphery of the top surface 141A towards close to the direction of the luminescent wafer 11.The optical waveguide layer 14A
The second lateral surface 142A it is opposite with the first lateral surface 122A of the wavelength conversion layer 12A.
In the present embodiment, the second lateral surface 142A of the optical waveguide layer 14A is parallel to the of the wavelength conversion layer 12A
One lateral surface 122A.The reflecting layer 13A is arranged on the top surface 141A of the optical waveguide layer 14A, and the optical waveguide layer 14A is coated
The top surface 121A of the wavelength conversion layer 12A and the first lateral surface 122A.The side 101A of the side luminescence component 10A is located at institute
State the second lateral surface 142A of optical waveguide layer 14A.
The material that the optical waveguide layer 14A is used is, for example, but is not limited to, silica gel.Those skilled in the art can manage
Solution, is not limited to silica gel here, other may be implemented the light for guiding the luminescent wafer 11A to send out, and with the high grade of transparency it
Translucent material can be used for the present invention.The light that the optical waveguide layer 14A can be used for guiding the luminescent wafer 11A to send out reaches
The position of acquiescence, and then adjust the range of exposures of the light.
Please refer to Fig. 2 C, in the third embodiment, the present embodiment provides side luminescence component 10B and first embodiment
Structure it is almost the same.The side luminescence component 10B includes a luminescent wafer 11B, a wavelength conversion layer 12B and a reflecting layer
13B.The structure of the luminescent wafer 11B, the wavelength conversion layer 12B and the reflecting layer 13B and the first embodiment
Unanimously, details are not described herein.Unlike, the side luminescence component 10B further includes an optical waveguide layer 14B.The optical waveguide layer 14B is set
It sets between the luminescent wafer 11B and the wavelength conversion layer 12B.
The optical waveguide layer 14B includes a top surface 141B and connects the second lateral surface 142B of the top surface 141B.Described
Two lateral surface 142B extend from the periphery of the top surface 141B towards close to the direction of the luminescent wafer 11B.The optical waveguide layer 14B
The second lateral surface 142B be located at the luminescent wafer 11B the second light-emitting surface 113B and the wavelength conversion layer 12B first
Between lateral surface 122B.
In the present embodiment, the second lateral surface 142B of the optical waveguide layer 14B be respectively parallel to the luminescent wafer 11B it
The first lateral surface 122B of the second light-emitting surface 113B and wavelength conversion layer 12B.It is led described in the wavelength conversion layer 12B claddings
The top surface 141B of photosphere 14B and the second lateral surface 142B.The first of the optical waveguide layer 14B claddings luminescent wafer 11B shines
Face 112B and the second light-emitting surface 113B.The side 101B of the side luminescence component 10B is located at the first of the wavelength conversion layer 12B
Lateral surface 122B.
The material that the optical waveguide layer 14B is used is, for example, but is not limited to, silica gel.Those skilled in the art can manage
Solution, is not limited to silica gel here, other may be implemented the light for guiding the luminescent wafer 11B to send out, and with the high grade of transparency it
Translucent material can be used for the present invention.The light that the optical waveguide layer 14B can be used for guiding the luminescent wafer 11B to send out reaches
The position of acquiescence, and then adjust the range of exposures of the light.
Please refer to Fig. 2 D, in the fourth embodiment, the present embodiment provides side luminescence component 10C and first embodiment
Structure it is almost the same.The side luminescence component 10C includes a luminescent wafer 11C, a wavelength conversion layer 12C and a reflecting layer
13C.The structure of the luminescent wafer 11C, the wavelength conversion layer 12C and the reflecting layer 13C and the first embodiment
Unanimously, details are not described herein.Unlike, the side luminescence component 10C further includes an optical waveguide layer 14C, and the optical waveguide layer 14C is set
It sets on the light-emitting surface 113C of the luminescent wafer 11C.
The optical waveguide layer 14C includes a top surface 141C and connects the second lateral surface 142C of the top surface 141C.Described
Two lateral surface 142C extend from the periphery of the top surface 141C towards close to the direction of the luminescent wafer 11C.The optical waveguide layer 14C
The second lateral surface 142C flushed with the second light-emitting surface 113C of the luminescent wafer 11C, and with the wavelength conversion layer 12C it
First lateral surface 122C is opposite.
In the present embodiment, the second lateral surface 142C of the optical waveguide layer 14C is parallel to the of the wavelength conversion layer 12C
One lateral surface 122C.The wavelength conversion layer 12C coats the second light-emitting surface 113C of the luminescent wafer 11C, the optical waveguide layer
The top surface 141C of 14C and the second lateral surface 142C.The side 101C of the side luminescence component 10C is located at the wavelength conversion layer
The first lateral surface 122C of 12C.
The material that the optical waveguide layer 14C is used is, for example, but is not limited to, silica gel.Those skilled in the art can manage
Solution, is not limited to silica gel here, other may be implemented the light for guiding the luminescent wafer 11C to send out, and with the high grade of transparency it
Translucent material can be used for the present invention.The light that the optical waveguide layer 14C can be used for guiding the luminescent wafer 11C to send out reaches
The position of acquiescence, and then adjust the range of exposures of the light.
Referring to Fig. 3, in the present embodiment, the side luminescence component 10 has one first symmetrical plane P1 and one second pair
Plane P2, the first symmetrical plane P1 is claimed to be mutually perpendicular to the second symmetrical plane P2.The central axis A1 is described
Intersecting lens between first symmetrical plane P1 and the second symmetrical plane P2.
20 system of the reflector is a bowl-shaped body with multifocal point parabolic.The width of the cross section of the reflector 20
It is gradually increased from the direction far from the luminescent wafer 11, to improve the light extraction efficiency of the light-emitting device 100.
The reflector 20 has an inner surface 21 of the side 101 towards the side luminescence component 10.The reflector
20 21 system of inner surface is made of specular reflective material.The specular reflective material is metal material.The metal material is for example
It is, but is not limited to, gold, silver, aluminium, chromium, copper, tin or nickel etc..
The inner surface 21 includes multistage paraboloid 210.The multistage paraboloid 210 has a plurality of focuses.It is described multiple
Several focuses are symmetrically and compartment of terrain arrangement namely a plurality of focuses are not folded mutually.A plurality of focuses all fall within institute
State the side 101 of side luminescence component 10.
Preferably, a plurality of focuses of the multistage paraboloid 210 are symmetrically dispersed in the side of the side luminescence component 10
On the intersecting lens of face 101 and the symmetrical plane.Therefore, the light that the light-emitting device 100 is sent out can equably towards the outside
Irradiation.
In the present embodiment, a plurality of focuses of the multistage paraboloid 210 are symmetrically distributed in the luminescent wafer 10
Side 101 and the first symmetrical plane P1 intersection is online and/or the side 101 of the luminescent wafer 10 and described the
The intersection of two symmetrical plane P2 is online.
It should be understood that the focal length of each section of paraboloid 210 is gradually increased from the direction far from the luminescent wafer 11, with reality
Now preferable spotlight effect.
It should be understood that the focus system of the multistage paraboloid 210 is the luminous point of the side luminescence component 10.Therefore,
The light that the luminescent wafer 11 is sent out via the reflector 20 multistage paraboloid 210 reflect after, can obtain it is preferable it
Spotlight effect.
Also referring to Fig. 3 and Fig. 4, each section of paraboloid 210 from the vertical section of the symmetrical plane there are two pairs to be referred to as coke
Point is referred to as focal length with two pairs.210 corresponding focus of the multistage paraboloid surrounds institute in the side 101 of the side luminescence component 10
Central axis A1 is stated to be symmetric.210 corresponding focus of institute's multistage paraboloid is in 10 edge of side of the side luminescence component 10
The linear arrangement respectively of the direction of the central axis A1.Specifically, 210 corresponding each focus of institute's multistage paraboloid is in towards institute
The both sides for stating reflector 20 are respectively formed a straight line.Certainly separate 10 direction of side luminescence component of the multistage paraboloid 210
Focal length is different.Adjacent paraboloid 210 is symmetric, and is seamlessly transitted between each multistage paraboloid 210.Each section of parabolic
It is to be integrally formed between face 210.
Preferably, the inner surface 21 includes at least three sections of paraboloids 210.At least three sections of paraboloids 210 include one
First paraboloid 211, one second paraboloid 212 and a third paraboloid 213.First paraboloid 211, second parabolic
Face 212 and the third paraboloid 213 are arranged with seamlessly transitting successively from the direction far from the luminescent wafer 11.Described first
Second paraboloid 212 and the third paraboloid 213 are symmetric with the central axis A1 described in paraboloid 211.
In the present embodiment, first paraboloid 211 is from the first symmetrical plane P1's or the second symmetrical plane P2
Vertical section there are two pairs to be referred to as focus F1 and two pairs be referred to as focal length L1, and second paraboloid 212 is from first symmetrical plane
There are the vertical section of P1 or the second symmetrical plane P2 two pairs to be referred to as focus F2 and two pairs are referred to as focal length L2, the third paraboloid
213 are referred to as coke from the vertical section of the first symmetrical plane P1 or the second symmetrical plane P2 with two couples of referred to as focus F3 and two couples
Away from L3, wherein focal length L3>Focal length L2>Focal length L1.Focus F1, F2 and F3 all fall within the first of the wavelength conversion layer 12
The intersection of lateral surface 122 and the first symmetrical plane P1 and the second symmetrical plane P2 are online, and focus F1, F2 and
F3 linearly arrange namely focus F1, F2 and F3 connections it is in alignment.The straight line and the side luminescence component 10
Central axis A1 is parallel.
In one embodiment, the focus F1 is located at the bottom position close to the luminescent wafer 11；The focus F3
Positioned at the top position close to the wavelength conversion layer 12；And the focus F2 is located at the focus 1 and the focus 2 is linked to be it
The centre position of line segment.Therefore, first lateral surface 122 of the light that the luminescent wafer 11 is sent out from the wavelength conversion layer 12
It is irradiated towards as many as the reflector 20 focus paraboloid after injection, the light-emitting angle of the light through reflection can become smaller.
In another embodiment, the focus F1 is located at the bottom position close to the luminescent wafer 11B；The focus
F3 is located at the top position close to the optical waveguide layer 14B；And the focus F2 is located at the focus 1 and the focus 2 is linked to be it
The centre position of line segment.Therefore, first lateral surface of the light that the luminescent wafer 11B is sent out from the wavelength conversion layer 12B
122B irradiates after projecting towards as many as the reflector 20 focus paraboloid, and the light-emitting angle of the light through reflection can become smaller.
The light-emitting angle of the light-emitting device 100 is less than 20 degree.
It should be understood that the shape of the multistage paraboloid 210 according to luminescent wafer 11 position difference and have more light not
Design is calculated with requiring.The focus of 210 correspondence of multistage paraboloid is in neutrality symmetrically, and the side luminescence component 10 is arranged
In the symmetrical center positions of the focus of 210 correspondence of multistage paraboloid, so that the focus of 210 correspondence of multistage paraboloid is fallen
In the side 101 of the side luminescence component 10.
It is possible to further the luminescent wafer 11 of the size and shape according to the selection of the shape of reflector 20 properly, thus
So that illumination is more uniform, and make full use of.Different multistage parabolics can be selected to have according to the shape of luminescent wafer 11
Face 210 adjusts the length and opening of required multistage paraboloid 210, so that emergent light reaches more preferable illuminating effect.
The packaging body 30 coats the side luminescence component 10 and the reflector 20.30 system of the packaging body is one guide-lighting
Part.In the present embodiment, the packaging body 30 is filled in the both sides of the reflector 20, and by the side luminescence component 10 and institute
It states the sealing of reflector 20 and forms a specific shape, such as cuboid, square.
The packaging body 30 is for fixing the luminous group of the side luminescence component 10 and the reflector 20 and the adjustment side
The relative position of part 10 and the reflector 20.In other words, the reflector 20 is arranged pre- one via the packaging body 30
The position first set, so that the focus of 210 correspondence of multistage paraboloid is fallen in the side 101 of the side luminescence component 10.Institute
It states packaging body 30 and can be additionally used in the position that the light for guiding the luminescent wafer 11 to send out reaches acquiescence, and then adjust the light
Range of exposures.
The packaging body 30 using material be, for example, but to be not limited to, silica gel.Those skilled in the art can manage
Solution, is not limited to silica gel here, other may be implemented to seal the side luminescence component 10 and the reflector 20, and have high transparency
The translucent material of degree can be used for the present invention.
The top of the packaging body 30 is equipped with the light-emitting surface 301 of a light-emitting surface 113 towards the luminescent wafer 11.
In order to further increase the light extraction efficiency of the light-emitting device 100, the light-emitting surface 301 is, for example, but does not limit to
In plane, elliptical arc surface or semicircle cambered surface.
Preferably, the light-emitting surface 301 is elliptical arc surface or semicircle cambered surface, so that the luminescent wafer 11 sends out and do not connect
The light for touching the reflector 20 reflects, and the light so as to make the light-emitting device 100 send out more is concentrated.
It should be understood that the bottom of the light-emitting surface 301 of the packaging body 30 flushed with the top of the reflector 20 or
Higher than the top of the reflector 20.Therefore, the light that the luminescent wafer 11 is sent out can be accurate by the packaging body 30
Ground reaches the default location of the multistage paraboloid 210 of the reflector 20, so that the light that the light-emitting device 100 is emitted is more
It concentrates.The reflector 20 and the side luminescence component 10 are encapsulated via the packaging body 30, to realize the reflector 20
With the accurate contraposition between the side luminescence component 10.
In the present embodiment, the light-emitting surface 301 is a flat surface, the top of the light-emitting surface 210 and the reflector 20
It flushes, to further realize the miniaturization of the light-emitting device 100.
Referring to Fig. 4, the opticpath figure of the light-emitting device 100 of present invention offer.The light that the luminescent wafer 11 is sent out
After line is reflected via the reflecting layer 13 of the side luminescence component 10, the light through reflection is outside the first of the wavelength conversion layer 12
The inner surface 21 of side 122 towards the reflector 20 projects, and the subsequent light is again via the multistage parabolic of the reflector 20
After face 210 is reflected, light-emitting angle can become smaller, and the light through reflection is projected from the light-emitting surface 301 of the packaging body 30.Therefore, institute
The dispersion angle for the light that the luminescent wafer 11 is sent out can be reduced by stating light-emitting device 100, and the light can concentrate photograph
It penetrates.
Referring to Fig. 5, its schematic diagram for the light-emitting device 200 of the second embodiment of the present invention.The present embodiment provides it
Light-emitting device 200 and the structure of first embodiment are almost the same.The light-emitting device 200 includes that side luminescence component 10, one is anti-
Penetrate cup 20 and a packaging body 30.The side luminescence component 10, the reflector 20 and packaging body 30 and the first embodiment it
Structure is almost the same, and details are not described herein.Unlike, the light-emitting surface 301 of the packaging body 30 is half arc surface.
The bottom of the semicircle cambered surface is that the top of the reflector 20 flushes.The bottom of the semicircle cambered surface is to described half
The degree height on the vertex of arc surface is a, and the width of the bottom of the semicircle cambered surface is b, wherein b/a 2.
It should be understood that in the present embodiment, side of the side luminescence component 10 suitable for first embodiment shines group
The first embodiment of part 10 is to the 4th embodiment or combinations thereof variation.
Referring to Fig. 6, its schematic diagram for the light-emitting device 300 of the 3rd embodiment of the present invention.The present embodiment provides it
Light-emitting device 300 and the structure of first embodiment are almost the same.The light-emitting device 300 includes that side luminescence component 10, one is anti-
Penetrate cup 20 and a packaging body 30.The side luminescence component 10, the reflector 20 and packaging body 30 and the first embodiment it
Structure is almost the same, and details are not described herein.Unlike, the light-emitting surface 301 of the packaging body 30 is half elliptical arc surface.
The bottom of the semiellipse cambered surface is flushed with the top of the reflector 20.The bottom of the semiellipse cambered surface to institute
The height for stating the vertex of semiellipse cambered surface is a, and the width of the bottom of the semiellipse cambered surface is b, wherein it is 1.4 that the value of b/a, which is situated between,
(1.4≤b/a< between to 2;2).
It should be understood that in the present embodiment, side of the side luminescence component 10 suitable for first embodiment shines group
The first embodiment of part 10 is to the 4th embodiment or combinations thereof variation.
Referring to Fig. 7, its schematic diagram for the light-emitting device 400 of the fourth embodiment of the present invention.The present embodiment provides it
Light-emitting device 400 and the structure of first embodiment are almost the same.The light-emitting device 400 includes that side luminescence component 10, one is anti-
Penetrate cup 20 and a packaging body 30.The side luminescence component 10, the reflector 20 and packaging body 30 and the first embodiment it
Structure is almost the same, and details are not described herein.Unlike, the packaging body 30 includes that one first light guide 31 and one second is guide-lighting
Part 32, and second light guide 32 is arranged on first light guide 31.
First light guide 31 includes one first light-emitting surface 311.First light-emitting surface 311 is, for example, but does not limit to
In a plane.
Second light guide 32 includes one second light-emitting surface 321, and two couple of second light-emitting surface 321 is correspondingly connected with institute
State the both ends of the first light-emitting surface 311.Second light-emitting surface 321 is, for example, but is not limited to, half elliptical arc surface or a semicircle
Cambered surface.
It should be understood that first light-emitting surface 311 is flushed with the top of the reflector 20.First light-emitting surface
311 height to the vertex of second light-emitting surface 321 is a, and the width of first light-emitting surface 311 is b, wherein the value of b/a
Jie is between 1.4 to 2 (1.4≤b/a≤2).
It should be understood that in the present embodiment, side of the side luminescence component 10 suitable for first embodiment shines group
The first embodiment of part 10 is to the 4th embodiment or combinations thereof variation.
Referring to Fig. 8, the light-emitting angle test chart of the light-emitting device 100 in first embodiment of the invention.The hair of the present invention
Electro-optical device 100 is in 0 degree and an angle of 90 degrees degree direction simulation test light-emitting angle, wherein 0 degree indicates tester with the luminous group in the side
Certain one side (first measures position) of part 10 carries out light-emitting angle simulation test, and 90 degree indicate to measure position rotation compared to first
The simulation test of light-emitting angle is carried out after turning 90 degrees.Test result shows that the light-emitting angle of the light-emitting device is less than 20 degree.By
It is reduced in the light-emitting angle of the light-emitting device, therefore the light of light-emitting device transmitting is more concentrated, to the light-emitting device
The light of 100 transmittings can expose to farther distance.Further, the light-emitting device can apply to high beam.
As indicated above and description embodiment is only for example.Therefore, many such details are both not shown or do not retouch
It states.Although many features and advantage of the present invention have been elaborated in description in front, together with the structure and function of the present invention
Details, but be the present invention be only it is illustrative it, and can be changed in detail, including shape and module arrangement,
In the concept of the disclosure, and include whole models of the broader sense foundation of the term by using in the claims
It encloses.It is, therefore, to be understood that above-described embodiment can modify in the range of claims.
Claims (20)
1. a kind of light-emitting device comprising：
Side luminescence component has one side comprising：
One luminescent wafer；
One wavelength conversion layer；It is coated on the luminescent wafer；And
One reflecting layer is set on the wavelength conversion layer；
One reflector, is located on the side of the side luminescence component, and the reflector has the side towards the side luminescence component
The inner surface system of one inner surface in face, the reflector is multifocal point parabolic, and the multifocal point parabolic includes multistage parabolic
Face, the focus of each section of paraboloid correspondence are symmetrically dispersed in the side of the side luminescence component；And
One packaging body encapsulates the side luminescence component and the reflector.
2. light-emitting device as described in claim 1, which is characterized in that the wavelength conversion layer include towards the reflector it
One first lateral surface of inner surface, the side of the side luminescence component are located at the first lateral surface of the wavelength conversion layer.
3. light-emitting device as described in claim 1, which is characterized in that the side luminescence component further includes an optical waveguide layer, described
Optical waveguide layer includes one second lateral surface of the inner surface towards the reflector, and the side of the side luminescence component is located at described lead
Second lateral surface of photosphere.
4. light-emitting device as claimed in claim 3, which is characterized in that the optical waveguide layer is set to the reflecting layer and the wave
Between long conversion layer, and the optical waveguide layer coats the wavelength conversion layer.
5. light-emitting device as claimed in claim 3, which is characterized in that the optical waveguide layer is set to the luminescent wafer and described
Between wavelength conversion layer, and the optical waveguide layer coats the luminescent wafer.
6. light-emitting device as described in claim 1, which is characterized in that the material in the reflecting layer includes titanium dioxide, dioxy
Change tin or zirconium dioxide.
7. light-emitting device as described in claim 1, which is characterized in that the inner surface of the reflector is by a mirror-reflection material
Material is made.
8. light-emitting device as claimed in claim 7, which is characterized in that the specular reflective material is metal material, the gold
It includes gold, silver, aluminium, chromium, copper, tin or nickel to belong to material.
9. light-emitting device as described in claim 1, which is characterized in that the side luminescence component has a plurality of luminous points, institute
The focus system for stating multistage paraboloid is the luminous point of the side luminescence component correspondence.
10. light-emitting device as described in claim 1, which is characterized in that the focal length of each section of paraboloid is from far from the luminous crystalline substance
The direction of piece gradually increases.
11. light-emitting device as described in claim 1, which is characterized in that the side luminescence component has a symmetrical plane, described
The corresponding focus of multistage paraboloid is symmetrically dispersed in the symmetrical plane and the intersection of the side of the side luminescence component is online.
12. light-emitting device as described in claim 1, which is characterized in that the side luminescence component has a central axis, described
The corresponding focus of multistage paraboloid central axis described in the side surrounding of the side luminescence component is symmetric.
13. light-emitting device as described in claim 1, which is characterized in that adjacent paraboloid is symmetric.
14. light-emitting device as described in claim 1, which is characterized in that seamlessly transitted between each multistage paraboloid, and each section of throwing
It is to be integrally formed between object plane.
15. light-emitting device as described in claim 1, which is characterized in that the multistage paraboloid includes at least three sections of paraboloids,
At least three sections of paraboloids include the first paraboloid, the second paraboloid and the first paraboloid.
16. light-emitting device as claimed in claim 15, which is characterized in that the focus of first paraboloid is located at close to described
The bottom position of luminescent wafer, the focus of the third paraboloid are located at the top position close to the wavelength conversion layer, and institute
State the second paraboloid focus be located at line segment that the focus of first paraboloid and the focus of the third paraboloid are linked to be it
Centre position.
17. light-emitting device as described in claim 1, which is characterized in that the packaging body includes a light-emitting surface, the light-emitting surface
It is plane, elliptical arc surface or semicircle cambered surface.
18. light-emitting device as described in claim 1, which is characterized in that the packaging body includes one first light guide and one the
Two light guides are formed on first light guide, and the survey luminescence component and the reflector cup package are led described first
Light part.
19. light-emitting device as claimed in claim 18, which is characterized in that first light guide includes one first light-emitting surface,
First light-emitting surface is plane；Second light guide includes one second light-emitting surface, and first light-emitting surface is elliptical arc surface
Or semicircle cambered surface.
20. light-emitting device as claimed in claim 19, which is characterized in that first light-emitting surface to second light-emitting surface it
The height on vertex is a, and the width of first light-emitting surface is b, wherein ranging from 1.4≤b/a≤2 of the value of b/a.
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|---|---|---|---|
| TW106110658 | 2017-03-30 | ||
| TW106110658A TWI636595B (en) | 2017-03-30 | 2017-03-30 | Light emitting device |
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| Publication Number | Publication Date |
|---|---|
| CN108709100A true CN108709100A (en) | 2018-10-26 |
| CN108709100B CN108709100B (en) | 2020-07-03 |
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| TW (1) | TWI636595B (en) |
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| TWI378578B (en) * | 2009-03-25 | 2012-12-01 | Coretronic Corp | Light emitting diode package |
| TW201416623A (en) * | 2012-10-25 | 2014-05-01 | 隆達電子股份有限公司 | Lighting device |
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| CN2851843Y (en) * | 2005-11-28 | 2006-12-27 | 施卫星 | Multi-focus paraboloid reflecting cup |
| CN101779302A (en) * | 2007-08-16 | 2010-07-14 | 皇家飞利浦电子股份有限公司 | The optical element of coupled to low profile side emitting led |
| CN101868865A (en) * | 2007-11-20 | 2010-10-20 | 皇家飞利浦电子股份有限公司 | Side emitting device with wavelength conversion |
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| CN203644813U (en) * | 2013-09-29 | 2014-06-11 | 深圳市聚飞光电股份有限公司 | LED support, LED, and LED light bar |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI636595B (en) | 2018-09-21 |
| TW201838213A (en) | 2018-10-16 |
| CN108709100B (en) | 2020-07-03 |
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