TWI635200B - An epitaxy growth equipment, the method of manufacturing the equipment, and the method of epitaxy layer growing - Google Patents

Abstract

The invention provides an epitaxial device, a device manufacturing method and an epitaxial method. The epitaxial device includes a quartz chamber, a support platform provided in the quartz chamber for supporting a wafer, and a quartz crystal chamber. A pair of reaction gas inlets and exhaust gas exhaust ports on the opposite side of the chamber; wherein: the side of the quartz chamber where the reaction gas inlets are located is also provided with two hydrogen gas inlets, and the two hydrogen gas inlets are respectively It is located above and below the gas inlet of the reaction gas; the upper and lower surfaces of the quartz chamber are provided with a plurality of bosses for reducing the flow rate of hydrogen gas. The invention can effectively suppress the polycrystalline silicon covering on the cavity wall of the quartz cavity during the epitaxial process, reduce particle contamination, and obtain a thicker silicon epitaxial layer (> 30 μm) at one time, without removing the wafer halfway and performing the quartz cavity Cleaning, which facilitates the rapid preparation of large-area, high-quality silicon epitaxial layers.

Description

Epitaxial equipment, equipment manufacturing method and epitaxial method

The invention belongs to the field of semiconductor manufacturing, and relates to an epitaxial device, a device manufacturing method and an epitaxial method.

Power integrated circuit manufacturers are gradually turning to 12-inch wafer-based manufacturing processes. Wafers with thick epitaxial layers are used to make power devices. However, the presence of thick silicon epitaxial layer growth (> 30 μ m) is a big challenge, especially when the wafer diameter is 12 inches. Growing a thick silicon epitaxial layer on an 8-inch wafer typically uses a batch type reactor.

Please refer to FIG. 1, which shows a schematic diagram of a batch processing reactor, which can process multiple wafers at the same time. But this reactor is not suitable for 12-inch wafers. Because the reactor with many 12-inch wafers has a large size, it will significantly reduce the uniformity of the epitaxial layer thickness.

Therefore, only single wafer reactors are suitable for the growth of 12-inch epitaxial layers. However, when a 12-inch epitaxial layer is grown using a single-wafer reactor, the quartz chamber is severely covered with polycrystalline silicon, causing additional particle problems. In order to achieve the growth of a 12-inch thick epitaxial layer and avoid polycrystalline silicon coverage in the quartz chamber, the epitaxial process requires the use of multiple layers Layer to form a thick epitaxial layer. After each thin layer is grown, the wafer needs to be taken out of the reactor and the reactor is cleaned with HCl to remove the polycrystalline silicon covered by the quartz chamber wall.

Please refer to FIG. 2, which is a structural diagram of a single wafer reactor used in the prior art. Both the reaction gas and the carrier gas hydrogen enter the quartz chamber 102 through an air inlet 101, and the exhaust gas is discharged through the air outlet 103. The substrate 104 is placed in the quartz chamber 102 through the support platform 105. A protective cover 106 is also enclosed outside the quartz chamber 102. A halogen lamp 107 is provided between the protective cover 106 and the quartz chamber 102. An Au reflective layer 108 is provided on the inner surface of the protective cover 106. In the prior art, in order to reduce the polycrystalline silicon coverage of the quartz chamber wall, a cooling air flow 109 is also used to cool the quartz chamber 102 to reduce the temperature of the quartz chamber 102. However, the effect of this method is still limited.

Therefore, how to provide an epitaxial device, a device manufacturing method, and an epitaxial method to effectively reduce the polycrystalline silicon coverage of the quartz chamber wall during the growth of a 12-inch thick epitaxial layer has become an important technical problem for those skilled in the art.

In view of the shortcomings of the prior art described above, the object of the present invention is to provide an epitaxial device, a device manufacturing method and an epitaxial method, which are used to solve the problem of polycrystalline silicon covering the quartz chamber wall during the growth of a large area thick epitaxial layer in the prior art .

In order to achieve the above object and other related objects, the present invention provides an epitaxial device, which includes a quartz chamber, a supporting platform for supporting a wafer provided in the quartz chamber, and a pair of opposite sides respectively provided in the quartz chamber Side reaction gas inlet and exhaust gas outlet; wherein: the side of the quartz chamber where the reaction gas inlet is located is also provided with two hydrogen gas inlets, and the two hydrogen gas inlets are respectively located in the reaction Above and below the gas inlet; The inner upper surface and the inner lower surface of the quartz chamber are provided with a plurality of bosses for reducing the flow rate of hydrogen gas.

Optionally, when the quartz chamber is placed horizontally, the reaction gas inlet and the exhaust gas outlet are located on the same horizontal plane.

Optionally, the distance between the two hydrogen gas inlets and the reaction gas inlet is equal.

Optionally, the height of the boss is 50-200 nm, and the length or width is 50-800 nm.

Optionally, the distance between two adjacent bosses is 50-800 nm.

Optionally, the cross section of the boss is circular, oval or polygonal.

Optionally, the top surface of the quartz cavity is concave downward and is curved in an arc.

Optionally, the epitaxial device further includes a protective cover surrounding the quartz chamber, and a reflective layer is provided on an inner surface of the protective cover.

Optionally, a halogen lamp is provided between the quartz chamber and the protective cover.

Optionally, a side wall of the protective cover is further provided with a cooling air intake port and a cooling air exhaust port for cooling the quartz chamber.

The invention also provides a method for manufacturing an epitaxial device, including the following steps: S1: providing a first element and a second element, the first element and the second element cooperate with each other to form a quartz chamber of the epitaxial device; The first element includes a first surface for forming an upper surface in the quartz chamber, and the second element includes a second surface for forming a lower surface in the quartz chamber; the first element and the second element Each element side wall is provided with a hydrogen gas inlet; S2: forming a polymer cover layer on the first surface or the second surface; S3: Provide a nano-imprint template, and use the nano-imprint process to form several grooves in the polymer cover layer; S4: cure the polymer cover layer; S5: use the polymer cover layer as a curtain The cover etches the first surface or the second surface to obtain a plurality of bosses for reducing the flow rate of hydrogen; S6: removing the polymer cover layer.

Optionally, in the step S1, the polymer cover layer is formed by a spraying method, and the thickness of the polymer cover layer is 200-1000 nm.

Optionally, the polymer cover layer is made of SU-8 photoresist, Zep520 positive electron resist, or polymethyl methacrylate.

Optionally, the nano-imprint template is made of polydimethylsiloxane.

Optionally, in the step S4, the polymer cover layer is cured by an ultraviolet light irradiation method.

Optionally, in step S5, the bump is obtained by etching using an inductively coupled plasma etching method.

Optionally, in the step S6, the polymer cover layer is removed by O ₂ plasma etching.

Optionally, the height of the boss is 50-200 nm, the length or width is 50-800 nm, and the distance between two adjacent bosses is 50-800 nm.

The invention also provides an epitaxial method, which includes the following steps: S1: placing a wafer on a support platform in a quartz chamber of an epitaxial device; S2: passing a reaction gas inlet provided on a side of the quartz chamber toward Inside the quartz cavity Introduce reaction gas; inject hydrogen into the quartz chamber through two hydrogen inlets provided on the side of the quartz chamber where the reaction gas inlet is located and above and below the reaction gas inlet, respectively ; Reducing the flow velocity of hydrogen through a plurality of bosses provided on the inner upper surface and the inner lower surface of the quartz chamber, so that the reaction gas close to the upper surface and the inner lower surface of the quartz chamber is affected by the Bernoulli effect; Is pushed back into the main airflow to form a silicon epitaxial layer on the surface of the wafer; S3: the reaction is exhausted through an exhaust gas exhaust port provided on the other side of the quartz chamber and opposite to the reaction gas intake port After the gas.

Optionally, the reaction gas includes trichlorosilane.

Optionally, the reaction gas further includes an impurity gas for obtaining a P-type silicon epitaxial layer or an N-type silicon epitaxial layer.

Optionally, in the epitaxial process, a step of cooling the quartz chamber by using a cooling air flow is further included.

Optionally, the height of the boss is 50-200 nm, the length or width is 50-800 nm, and the distance between two adjacent bosses is 50-800 nm.

As described above, the epitaxial device, the device manufacturing method and the epitaxial method of the present invention have the following beneficial effects: The present invention uses nano-imprint technology to form several nano-level bosses on the upper surface and the inner lower surface of the quartz chamber. When the gas flows through the upper surface and the inner lower surface of the quartz chamber, the gas can form a nano-level vortex in the gap between these nano-level bosses, thereby significantly reducing the gas flow rate on the surface of the quartz chamber. The present invention can form two hydrogen gas streams by setting two hydrogen gas inlets, and the two hydrogen gas streams are respectively close to the inner upper surface and the inner lower surface of the quartz chamber. Due to the existence of the nano-level boss, the flow rate of the two hydrogen gas streams will be much smaller than the flow rate of the reaction gas stream. According to the Bernoulli effect, when the reactive gas is delivered to the surface of the quartz chamber When they are exposed, they will be pushed back into the main gas flow of the reaction gas, thereby reducing the contact between the reaction gas and the quartz chamber, and effectively inhibiting the polycrystalline silicon covering of the wall of the quartz chamber. The epitaxial method of the present invention can obtain a large-area, high-quality thick silicon epitaxial layer.

Component label description

101‧‧‧air inlet

102‧‧‧Quartz Chamber

103‧‧‧Air outlet

104‧‧‧ substrate

105‧‧‧Support platform

106‧‧‧Protective cover

107‧‧‧halogen lamp

108‧‧‧Au reflective layer

109‧‧‧cooling air flow

201‧‧‧Quartz Chamber

202‧‧‧wafer

203‧‧‧Support platform

204‧‧‧Reaction gas inlet

205‧‧‧Exhaust gas outlet

206‧‧‧Hydrogen inlet

207‧‧‧Boss

208‧‧‧Protective cover

209‧‧‧Reflective layer

210‧‧‧ Halogen

211‧‧‧cooling air exhaust port

212‧‧‧Reactive gas main gas flow

213‧‧‧cooling air flow

214‧‧‧Reactive gas

215‧‧‧polycrystalline silicon

216‧‧‧nano-level eddy current

217‧‧‧First component

218‧‧‧Second Element

219‧‧‧first surface

220‧‧‧ second surface

221‧‧‧ polymer overlay

222‧‧‧Nano imprint template

223‧‧‧Groove

FIG. 1 is a schematic structural view of a batch processing reactor in the prior art.

FIG. 2 is a schematic diagram showing the structure of a single wafer reactor in the prior art.

FIG. 3 is a schematic structural view of an epitaxial device according to the present invention.

Figure 4 shows a top view of the area shown by the dashed box in Figure 3.

Figure 5 shows an enlarged view of the area shown by the dashed box in Figure 3.

Fig. 6 is a schematic diagram showing the flow direction of the reaction gas when the boss is not provided on the inner surface of the quartz chamber.

FIG. 7 is a schematic diagram showing the flow direction of the reaction gas when a boss is provided on the inner surface of the quartz chamber.

FIG. 8 is a schematic diagram showing the structure of the first element.

FIG. 9 is a schematic diagram showing the structure of the second element.

Figure 10 shows a schematic diagram of a polymer cover layer formed on a first surface.

11 to 13 are schematic diagrams of forming a plurality of grooves in the polymer cover layer using a nano-imprinting process.

FIG. 14 is a schematic view showing that the first surface or the second surface is etched by using the polymer cover layer as a curtain to obtain a plurality of bosses for reducing the flow rate of hydrogen.

FIG. 15 shows a stone formed by the first element and the second element forming an epitaxial device. Schematic of the British chamber.

The following describes the embodiments of the present invention through specific specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through different specific implementations, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

See Figures 3 to 15. It should be noted that the illustrations provided in this embodiment only illustrate the basic idea of the present invention in a schematic manner, and only the components related to the present invention are shown in the drawings, rather than the number, shape and For size drawing, the type, quantity, and proportion of each component can be changed at will in actual implementation, and the component layout type may be more complicated.

Example one

The present invention provides an epitaxial device. Please refer to FIG. 3, which is a schematic diagram showing the structure of the epitaxial device. 203 and a reaction gas inlet 204 and an exhaust gas outlet 205 respectively provided on a pair of opposite sides of the quartz chamber 201; wherein: two sides of the quartz chamber where the reaction gas inlet 204 is located are also provided with two Hydrogen gas inlets 206. These two hydrogen gas inlets 206 are located above and below the reactive gas inlet 204, respectively. The upper and lower surfaces of the quartz chamber 201 are provided with a plurality of Boss 207 with low hydrogen flow rate.

As an example, the top surface of the quartz chamber 1 is concave downward and is curved in an arc. This concave top surface helps prevent the quartz chamber from being overpressured and causing the quartz to crack. The epitaxial device further includes a protective cover 208 surrounding the quartz chamber. A reflective layer 209 is provided on an inner surface of the protective cover 208. This reflective layer helps to concentrate heat inside the quartz chamber. In this embodiment, the reflective layer 209 is an Au reflective layer.

As an example, a halogen lamp 210 is provided between the quartz chamber 1 and the protective cover 208. The halogen lamp is used to heat the wafer to the temperature required for the process. The 90 degree staggered lamp tubes on the upper and lower sides can ensure the temperature uniformity of the wafer.

As an example, a side wall of the protective cover 208 is further provided with a cooling air inlet (not shown) and a cooling air exhaust port (211) for cooling the quartz chamber 201. It is used to form a cooling air flow and reduce the temperature of the quartz chamber wall during the epitaxial process.

As an example, when the quartz chamber 1 is placed horizontally, the reaction gas inlet port 204 and the exhaust gas outlet port 205 are located on the same horizontal plane. In FIG. 3, the main flow of the reaction gas 212 and the cooling air flow 213 are shown by black arrows.

Specifically, the cross section of the boss 207 includes, but is not limited to, a circle, an oval, or a polygon, and its size is in the nanometer range. As an example, the height of the boss 207 is 50-200 nm, the length or width is 50-800 nm, and the distance between two adjacent bosses is 50-800 nm.

Refer to Figure 4, which is a top view of the area shown by the dashed box in Figure 3. In this embodiment, the cross-section of the bosses 207 is preferably circular, and the bosses are arranged periodically. FIG. 4 also shows the width a of the boss 207 and the distance b between two adjacent bosses.

Refer to Figure 5, which is shown as an enlarged view of the area shown by the dashed box in Figure 3. The width a of the boss 207, the distance b between two adjacent bosses, and the height c of the boss are shown in.

Specifically, in the present invention, two hydrogen gas inlets 206 are provided to form two hydrogen gas streams, and the two hydrogen gas streams are close to the inner upper surface and the inner lower surface of the quartz chamber 201, respectively. Due to the existence of the nano-level boss 207, the flow rate of the two hydrogen gas streams will be much smaller than the flow rate of the reaction gas stream.

In this embodiment, the distance between the two hydrogen gas inlets 206 and the reaction gas inlet 204 is preferably equal.

Please refer to FIG. 6 and FIG. 7, which respectively show a schematic diagram of a reaction gas flow direction when a boss is not provided on the inner surface of the quartz chamber and a schematic diagram of a reaction gas flow direction when a boss is provided on the inner surface of the quartz chamber. It can be seen that when the boss 207 is not provided, when the reaction gas 214 approaches the inner wall of the quartz chamber, polycrystalline silicon 215 is generated on the inner wall of the quartz chamber (as shown in FIG. 6). After the boss 207 is provided, when the hydrogen flows through the inner wall of the quartz chamber, a nano-level vortex 216 is formed in the gap between the bosses, thereby significantly reducing the hydrogen gas flow rate on the surface of the quartz chamber. Effect, when the reaction gas 214 is delivered to the surface of the quartz chamber 201, they will be pushed back into the main gas flow 212 of the reaction gas, thereby reducing the contact between the reaction gas 214 and the quartz chamber 201, and effectively suppressing the quartz chamber 201 The walls are covered with polycrystalline silicon.

The epitaxial device of the present invention can effectively suppress the polycrystalline silicon covering on the cavity wall of the quartz chamber during the epitaxial process, reduce particle contamination, and obtain a thicker silicon epitaxial layer (> 30 μm ) at one time, without removing the wafer halfway. The quartz chamber is cleaned, which facilitates the rapid preparation of large-area, high-quality silicon epitaxial layers.

Example two

The invention also provides a method for manufacturing an epitaxial device, which includes the following steps: referring to FIG. 8 and FIG. 9, performing step S1: providing a first element 217 and a second element 218, the first element 217 and the second element Elements 218 cooperate with each other to form a quartz chamber of an epitaxial device; the first element 218 includes a first surface 219 for forming an upper surface of the quartz chamber, and the second element 218 includes The second surface 220 on the lower surface of the quartz chamber; the side walls of the first element 217 and the second element 218 are respectively provided with a hydrogen gas inlet.

Referring to FIG. 10, step S2 is performed: forming a polymer cover layer 221 on the first surface or the second surface. FIG. 10 illustrates the first element 217 as an example.

As an example, the polymer cover layer 221 is formed by a spraying method, and the thickness of the polymer cover layer 221 is 200-1000 nm. In other embodiments, other coating methods may also be adopted, as long as the polymer covering layer 221 obtained is relatively uniform.

As an example, the polymer cover layer 221 is made of SU-8 photoresist, Zep520 positive electron resist, or polymethyl methacrylate (PMMA).

Referring to FIGS. 11 to 13, step S3 is performed: a nano-imprint template 222 is provided, and a plurality of grooves 223 are formed in the polymer cover layer 221 by a nano-imprint process.

The nano-imprinting process refers to embossing a nano pattern with a nano pattern on a silicon substrate coated with a polymer material in a proportional proportion by mechanical force. The processing resolution is only related to the size of the pattern. Not limited by the physical limitation of the shortest exposure wavelength of optical lithography, the current NIL technology can already produce patterns with line widths below 5nm. Because the lithography mask template and the cost of using optical imaging equipment are eliminated. Therefore, NIL technology has the economic advantages of low cost and high output. At present, nano-embossing can be summarized into four representative technologies: hot embossing lithography technology, UV curing embossing Lithography technology, soft embossing, laser assisted direct lithography technology.

In this embodiment, it is preferable to use the ultraviolet curing embossing lithography technique. UV curing embossing lithography is an embossing lithography technology that uses ultraviolet light to harden polymers at room temperature and low pressure. The pre-treatment is similar to thermal embossing. First, a template with a nano pattern must be prepared. The template material for UV-curing embossing lithography must use a material that can penetrate ultraviolet rays, and apply a layer of low-viscosity, UV-sensitive liquid polymer photoresist on the silicon substrate. After the template and substrate are aligned, The template is pressed into the photoresist layer and irradiated with ultraviolet light to cause the photoresist to polymerize and harden to form. Then, the mold is removed and the remaining photoresist on the substrate is etched to complete the entire UV curing imprint. Compared with hot embossing, UV embossing does not require high temperature and high pressure conditions. It can obtain high-resolution graphics at the nanometer scale at low cost and can be used to develop nanometer components.

As an example, the nano-embossed template 222 is made of polydimethylsiloxane.

Step S4 is then performed: curing the polymer cover layer 221.

Specifically, the polymer cover layer 221 is cured by an ultraviolet light irradiation method.

Referring to FIG. 14, step S5 is performed: the first surface or the second surface is etched by using the polymer cover layer 221 as a curtain to obtain a plurality of bosses 207 for reducing a hydrogen flow rate.

As an example, the bump 207 is obtained by etching using an inductively coupled plasma etching method.

As an example, the height of the boss is 50-200 nm, the length or width is 50-800 nm, and the distance between two adjacent bosses is 50-800 nm. The length and width of the obtained boss can be controlled by setting the graphic of the nano-imprint template, and the height of the obtained boss can be controlled by adjusting process parameters such as etching time.

Finally, step S6 is performed: removing the polymer cover layer.

As an example, O ₂ plasma etching is used to remove the polymer cover layer.

Please refer to FIG. 15, which shows a schematic diagram of a quartz cavity of the epitaxial device when the first element 217 and the second element 218 cooperate.

In the epitaxial device obtained by the device manufacturing method of the present invention, several nano-level bosses are formed on the upper surface and the inner lower surface of the quartz chamber, and a hydrogen gas inlet is provided above and below the reaction gas inlet. When the gas flows through the upper and lower surfaces of the quartz chamber, the hydrogen gas flow can form nano-level vortices in the gap between these nano-level bosses, thereby significantly reducing the upper and lower surfaces of the quartz chamber. Nearby hydrogen gas flow rate. According to the Bernoulli effect, when the reaction gas is delivered to the surface of the quartz chamber, they will be pushed back into the main gas flow of the reaction gas, thereby reducing the contact between the reaction gas and the quartz chamber, and effectively suppressing the polycrystalline silicon on the wall of the quartz chamber. cover.

Example three

The invention also provides an epitaxial method, which includes the following steps:

First, step S1 is performed: placing a wafer on a support platform in a quartz chamber of an epitaxial device.

Step S2 is then executed: the reaction gas is introduced into the quartz chamber through a reaction gas inlet provided on the side of the quartz chamber; Two hydrogen gas inlets above and below the gas inlet of the reaction gas pass hydrogen into the quartz chamber; the hydrogen gas is reduced by a plurality of bosses provided on the inner upper surface and the inner lower surface of the quartz chamber. The flow velocity, so that the reaction gas close to the upper surface and the inner lower surface of the quartz chamber is pushed back into the main airflow by the Bernoulli effect, A silicon epitaxial layer is formed on the surface.

As an example, the height of the boss is 50-200 nm, the length or width is 50-800 nm, and the distance between two adjacent bosses is 50-800 nm.

As an example, the reaction gas includes silicon trichlorohydrogen (SiHCl ₃ , TCS for short). In other embodiments, the reaction gas may also be other silicon-containing gas, such as silane (SiH ₄ ), dichlorosilane (SiH ₂ Cl ₂ , DCS for short), and the like.

As an example, when a doped silicon epitaxial layer is to be prepared, the reaction gas further includes an impurity gas for obtaining a P-type epitaxial layer or an N-type epitaxial layer. Wherein, N-type impurity gas employed phosphine (PH ₃₎ or arsine (AsH _3), P-type impurity gas can be diborane (B ₂ H _6).

Further, during the epitaxial process, the quartz chamber can also be cooled by the cooling air flow, which further reduces the probability of the polycrystalline silicon being generated on the quartz chamber wall. .

Finally, step S3 is performed: exhausting the reacted gas through an exhaust gas exhaust port provided on the other side of the quartz chamber and opposite to the reactive gas inlet.

The epitaxial method of the present invention can effectively suppress the polycrystalline silicon covering on the cavity wall of the quartz cavity during the epitaxial process, reduce particle contamination, and obtain a thicker silicon epitaxial layer (> 30 μm ) at one time, without removing the wafer midway The quartz chamber is cleaned, which facilitates the rapid preparation of large-area, high-quality silicon epitaxial layers.

In summary, the epitaxial device, the device manufacturing method and the epitaxial method of the present invention have the following beneficial effects: The present invention uses nano-imprint technology to form several nano-level protrusions on the upper surface and the inner lower surface of the quartz chamber. When the gas flows through the upper and lower surfaces of the quartz chamber, the gas can form a nano-level vortex in the gap between these nano-level bosses, thereby significantly reducing the gas flow rate on the surface of the quartz chamber. In the present invention, two hydrogen gas inlets are provided. The two hydrogen gas streams are formed, and the two hydrogen gas streams are respectively close to the inner upper surface and the inner lower surface of the quartz chamber. Due to the existence of the nano-level boss, the flow rate of the two hydrogen gas streams will be much smaller than the flow rate of the reaction gas stream. According to the Bernoulli effect, when the reaction gas is delivered to the surface of the quartz chamber, they will be pushed back into the main gas flow of the reaction gas, thereby reducing the contact between the reaction gas and the quartz chamber, and effectively suppressing the polycrystalline silicon on the wall of the quartz chamber. cover. The epitaxial method of the present invention can obtain a large-area, high-quality thick silicon epitaxial layer. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

The above-mentioned embodiments merely illustrate the principle of the present invention and its effects, but are not intended to limit the present invention. Anyone familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field to which they belong without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims (23)

An epitaxial device includes a quartz chamber, a support platform provided in the quartz chamber for supporting a wafer, and a reaction gas inlet and an exhaust gas outlet provided on a pair of opposite sides of the quartz chamber, respectively. It is characterized in that there are two hydrogen gas inlets on the side of the quartz chamber where the reaction gas inlet is located, and the two hydrogen gas inlets are respectively located above and below the reaction gas inlet; The inner upper surface and the inner lower surface of the quartz chamber are provided with a plurality of bosses for reducing the flow rate of hydrogen. The epitaxial device according to claim 1, wherein when the quartz chamber is placed horizontally, the reaction gas inlet and the exhaust gas outlet are located on the same horizontal plane. The epitaxial device according to claim 1, wherein a distance between two hydrogen gas inlets and the reaction gas inlet is equal. The epitaxial device according to claim 1, wherein the height of the boss is 50-200 nm, and the length or width is 50-800 nm. The epitaxial device according to claim 1, wherein a distance between two adjacent bosses is 50-800 nm. The epitaxial device according to claim 1, wherein the cross section of the boss is circular, oval or polygonal. The epitaxial device according to claim 1, wherein a top surface of the quartz chamber is concave downward and is curved in an arc. The epitaxial device according to claim 1, wherein the epitaxial device further comprises a protective cover surrounding the quartz chamber, and a reflective layer is provided on an inner surface of the protective cover. The epitaxial device according to claim 8, wherein a halogen lamp is provided between the quartz chamber and the protective cover. The epitaxial device according to claim 8, wherein a side wall of the protective cover is further provided with a cooling air intake port and a cooling air exhaust port for cooling the quartz chamber. A method for manufacturing an epitaxial device includes the following steps: S1: providing a first component and a second component, the first component and the second component cooperate with each other to form a quartz chamber of the epitaxial device; the first The element includes a first surface for constituting an upper surface in the quartz chamber, and the second element includes a second surface for constituting a lower surface in the quartz chamber; the first element and the second element side walls are respectively provided There is a hydrogen gas inlet; S2: a polymer cover layer is formed on the first surface or the second surface; S3: a nano-imprint template is provided, and a nano-imprint process is used in the polymer cover layer Forming several grooves; S4: curing the polymer cover layer; S5: etching the first surface or the second surface using the polymer cover layer as a curtain to obtain a plurality of bosses for reducing the flow rate of hydrogen ; S6: removing the polymer cover layer. The method for manufacturing an epitaxial device according to claim 11, wherein in the step S1, the polymer cover layer is formed by a spraying method, and the thickness of the polymer cover layer is 200-1000 nm. The method for manufacturing an epitaxial device according to claim 11, wherein the polymer cover layer is made of SU-8 photoresist, Zep520 positive electron resist, or polymethyl methacrylate. The method for manufacturing an epitaxial device according to claim 11, wherein the nano-imprint template is made of polydimethylsiloxane. The method for manufacturing an epitaxial device according to claim 11, wherein in the step S4, the polymer cover layer is cured by an ultraviolet light irradiation method. The method for manufacturing an epitaxial device according to claim 11, wherein in step S5, the inductive coupling plasma etching method is used to etch to obtain the boss. The method for manufacturing an epitaxial device according to claim 11, wherein in the step S6, the polymer cover layer is removed by using O ₂ plasma etching. The method for manufacturing an epitaxial device according to claim 11, wherein the height of the boss is 50-200nm, the length or width is 50-800nm, and the distance between two adjacent bosses is 50-800nm. . An epitaxial method includes the following steps: S1: placing a wafer on a support platform in a quartz cavity of an epitaxial device; S2: passing a reaction gas inlet provided on a side of the quartz cavity toward the quartz cavity The reaction gas is introduced into the chamber; the two hydrogen gas inlets provided on the side of the quartz chamber where the reaction gas inlet is located and respectively above and below the reaction gas inlet are passed into the quartz chamber. Hydrogen; the flow velocity of hydrogen is reduced by a plurality of bosses provided on the inner upper surface and the inner lower surface of the quartz chamber, so that the reaction gas close to the upper surface and the inner lower surface of the quartz chamber functions in the Bernoulli effect It is pushed back into the main airflow to form a silicon epitaxial layer on the surface of the wafer; S3: It is discharged through an exhaust gas exhaust port provided on the other side of the quartz chamber and opposite to the reaction gas intake port Reaction gas. The epitaxy method according to claim 19, wherein the reaction gas includes trichlorosilane. The epitaxy method according to claim 20, wherein the reaction gas further includes an impurity gas for obtaining a P-type silicon epitaxial layer or an N-type silicon epitaxial layer. The epitaxy method according to claim 19, wherein in the epitaxy process, the method further comprises a step of cooling the quartz chamber with a cooling air flow. The epitaxial method according to claim 19, wherein the height of the boss is 50-200 nm, the length or width is 50-800 nm, and the distance between two adjacent bosses is 50-800 nm.