TWI629756B - Package structure and its package substrate - Google Patents

Package structure and its package substrate Download PDF

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Publication number
TWI629756B
TWI629756B TW106127460A TW106127460A TWI629756B TW I629756 B TWI629756 B TW I629756B TW 106127460 A TW106127460 A TW 106127460A TW 106127460 A TW106127460 A TW 106127460A TW I629756 B TWI629756 B TW I629756B
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Taiwan
Prior art keywords
opening
packaging
circuit structure
crystal placement
substrate
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TW106127460A
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Chinese (zh)
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TW201911490A (en
Inventor
簡秀芳
謝孟學
許志華
林宗利
張月瓊
朱育德
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矽品精密工業股份有限公司
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Priority to TW106127460A priority Critical patent/TWI629756B/en
Priority to CN201710906357.XA priority patent/CN109390311A/en
Application granted granted Critical
Publication of TWI629756B publication Critical patent/TWI629756B/en
Publication of TW201911490A publication Critical patent/TW201911490A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

一種封裝基板,係於其絕緣保護層上形成對應置晶區之開口,且該開口之側壁呈凹凸狀,使該絕緣保護層延伸至該置晶區中,以覆蓋位於該置晶區中之部分線路結構,降低該線路結構外露於該置晶區之面積,因而於絕緣材填入該置晶區時能接觸較少的線路結構,避免發生脫層問題。 An encapsulation substrate is formed with an opening corresponding to the crystal placement area on the insulating protection layer, and the side wall of the opening is concave and convex, so that the insulating protection layer extends into the crystal placement area to cover the crystal placement area Part of the circuit structure reduces the area of the circuit structure exposed to the crystal placement area, so when the insulating material is filled into the crystal placement area, fewer circuit structures can be contacted to avoid the problem of delamination.

Description

封裝結構及其封裝基板 Packaging structure and packaging substrate

本發明係有關一種半導體封裝技術,尤指一種封裝結構及其封裝基板。 The invention relates to a semiconductor packaging technology, in particular to a packaging structure and a packaging substrate.

隨著電子產業的發達,現今的電子產品已趨向輕薄短小與功能多樣化的方向設計,半導體封裝技術亦隨之開發出不同的封裝型態。為滿足半導體裝置之高積集度(Integration)以及微型化(Miniaturization)需求,業界多採用覆晶(Flip chip)式封裝結構。 With the development of the electronics industry, today's electronic products have been designed in the direction of light, thin, short and diverse functions, and semiconductor packaging technologies have also developed different packaging types. In order to meet the requirements of high integration and miniaturization of semiconductor devices, the industry mostly adopts flip chip packaging structure.

第1A圖係為習知覆晶式封裝結構1之剖視示意圖。如第1A圖所示,一半導體晶片13藉由複數銲錫凸塊130結合至一封裝基板10之線路層11之電性接觸墊110上並電性連接該線路層11之導電跡線111,再形成底膠14於該半導體晶片13與該封裝基板10之間,以包覆該些銲錫凸塊130。 FIG. 1A is a schematic cross-sectional view of a conventional flip-chip package structure 1. FIG. As shown in FIG. 1A, a semiconductor chip 13 is bonded to the electrical contact pads 110 of the circuit layer 11 of a package substrate 10 through a plurality of solder bumps 130 and electrically connected to the conductive traces 111 of the circuit layer 11, and A primer 14 is formed between the semiconductor wafer 13 and the packaging substrate 10 to cover the solder bumps 130.

然而,如第1A’圖所示,該封裝基板10之絕緣保護層12僅形成有複數對應外露各該電性接觸墊110之開孔120,故於該底膠14流入該半導體晶片13與該封裝基板 10間時,容易導致該底膠14中具較大顆粒的填充材(filler)無法通過該半導體晶片13與該封裝基板10間而產生空隙(void),以致於後續製程中容易發生爆米花現象(Popcorn),致使產品良率降低。 However, as shown in FIG. 1A ′, the insulating protection layer 12 of the package substrate 10 is only formed with a plurality of openings 120 corresponding to the exposed electrical contact pads 110, so the primer 14 flows into the semiconductor chip 13 and the Package substrate When there are 10 rooms, it is easy to cause fillers with larger particles in the primer 14 to pass through between the semiconductor wafer 13 and the packaging substrate 10 to create voids, so that popcorn is likely to occur in the subsequent manufacturing process (Popcorn), resulting in a decrease in product yield.

第1B圖係為習知覆晶式封裝結構1’之另一實施態樣之剖視示意圖。如第1B及1B’圖所示,其製程與第1A圖所示之製程相同,但該絕緣保護層12係對應置晶區D形成單一開口120’,以外露各該電性接觸墊110與部分該導電跡線111,使各該電性接觸墊110間沒有該絕緣保護層12阻隔,故該底膠14中較大的顆粒能輕易通過該半導體晶片13與該封裝基板10間,以避免該底膠14發生空隙之問題。 FIG. 1B is a schematic cross-sectional view of another embodiment of the conventional flip-chip package structure 1 '. As shown in FIGS. 1B and 1B ′, the manufacturing process is the same as the manufacturing process shown in FIG. 1A, but the insulating protective layer 12 forms a single opening 120 ′ corresponding to the crystal region D, exposing each of the electrical contact pads 110 and Part of the conductive trace 111 prevents the insulating protective layer 12 between the electrical contact pads 110, so the larger particles in the primer 14 can easily pass between the semiconductor chip 13 and the packaging substrate 10 to avoid The primer 14 has a void problem.

惟,由於該底膠14與介電材(即該封裝基板10之表面材質)或絕緣保護層12之間的結合力佳而與銅質線路層11之間結合力不佳,故於該置晶區D中,該底膠14接觸結合較多的線路層11而接觸較少的介電材(即該封裝基板10之表面材質)與絕緣保護層12,因而該底膠14與該封裝基板10的結合力不佳,導致容易發生脫層(delamination)之問題,即該底膠14與該封裝基板10發生分離之問題。 However, since the bonding force between the primer 14 and the dielectric material (that is, the surface material of the packaging substrate 10) or the insulating protective layer 12 is good and the bonding strength between the copper circuit layer 11 is not good, it is In the crystal area D, the primer 14 contacts more circuit layers 11 and less dielectric materials (ie, the surface material of the package substrate 10) and the insulating protection layer 12, so the primer 14 and the package substrate The poor adhesion of 10 leads to the problem of delamination, that is, the problem of separation of the primer 14 and the packaging substrate 10.

因此,如何克服上述習知技術之種種問題,實已成為目前業界亟待克服之難題。 Therefore, how to overcome the problems of the above-mentioned conventional technologies has become a problem that the industry urgently needs to overcome.

鑑於上述習知技術之種種缺失,本發明提供一種封裝基板,係包括:基板本體,係於一表面上形成有線路結構 並定義有至少一置晶區;以及絕緣保護層,係形成於該基板本體與該線路結構上,其中,該絕緣保護層具有對應該置晶區之開口,以令部分該線路結構外露於該開口,且該開口之側壁呈凹凸狀,以令部分該絕緣保護層延伸至該置晶區中。 In view of the above-mentioned defects of the prior art, the present invention provides a package substrate, which includes: a substrate body with a circuit structure formed on a surface And defines at least one crystal placement region; and an insulating protective layer formed on the substrate body and the circuit structure, wherein the insulating protection layer has an opening corresponding to the crystal placement region, so that part of the circuit structure is exposed to the An opening, and the side wall of the opening is concave and convex, so that part of the insulating protective layer extends into the crystal placement region.

本發明復提供一種封裝結構,係包括:前述之封裝基板;至少一電子元件,係結合於該置晶區上;以及絕緣材,係形成於該電子元件與該封裝基板之間。 The present invention further provides a packaging structure including: the aforementioned packaging substrate; at least one electronic component coupled to the crystal placement area; and an insulating material formed between the electronic component and the packaging substrate.

前述之封裝結構中,該絕緣材係為底膠或封裝材。 In the aforementioned packaging structure, the insulating material is a primer or a packaging material.

前述之封裝結構及其封裝基板中,該絕緣保護層係具有自該開口之側壁延伸出的複數凸伸部及複數凹陷部,並藉由該凸伸部遮蓋外露於該置晶區之部分該線路結構。 In the aforementioned packaging structure and its packaging substrate, the insulating protective layer has a plurality of protrusions and a plurality of depressions extending from the side wall of the opening, and the portion exposed from the crystal placement area is covered by the protrusion Line structure.

前述之封裝結構及其封裝基板中,該開口之側壁之凹凸狀係為鋸齒型;或者,該凹凸狀之凸伸部係為矩形、刀劍形、弧形或三角形。 In the aforementioned packaging structure and its packaging substrate, the concave-convex shape of the side wall of the opening is sawtooth; or, the convex-convex protrusion is rectangular, sword-shaped, arc-shaped or triangular.

前述之封裝結構中,該絕緣材係透過該凹陷部作為連通該開口之溝槽,以填充至該電子元件與該封裝基板之間。 In the aforementioned packaging structure, the insulating material is used as a groove communicating with the opening through the recessed portion to fill between the electronic component and the packaging substrate.

由上可知,本發明之封裝結構及其封裝基板,主要藉由該絕緣保護層之開口之側壁呈凹凸狀(非平直表面),以令部分該絕緣保護層延伸至該置晶區中,以覆蓋位於該置晶區中之部分線路結構,使該線路結構外露於該置晶區中之面積之比例降低,故相較於習知技術,本發明之絕緣材接觸較少的線路結構,因而能避免發生脫層問題。 It can be seen from the above that the package structure and the package substrate of the present invention mainly use the side wall of the opening of the insulating protection layer to be concave and convex (non-flat surface), so that part of the insulating protection layer extends into the crystal placement region, In order to cover part of the circuit structure in the crystal placement area, the ratio of the area of the circuit structure exposed in the crystal placement area is reduced, so compared with the conventional technology, the insulating material of the present invention has less contact with the circuit structure, Therefore, the delamination problem can be avoided.

1,1’,2‧‧‧封裝結構 1,1 ’, 2‧‧‧Package structure

10,2a‧‧‧封裝基板 10,2a‧‧‧Package substrate

11‧‧‧線路層 11‧‧‧ Line layer

110,210‧‧‧電性接觸墊 110,210‧‧‧Electrical contact pad

111,211‧‧‧導電跡線 111,211‧‧‧ conductive traces

12‧‧‧絕緣保護層 12‧‧‧Insulation protective layer

120,220’‧‧‧開孔 120,220’‧‧‧opening

120’,220‧‧‧開口 120 ’, 220‧‧‧ opening

13‧‧‧半導體晶片 13‧‧‧Semiconductor chip

130‧‧‧銲錫凸塊 130‧‧‧Solder bump

14‧‧‧底膠 14‧‧‧ Primer

20‧‧‧基板本體 20‧‧‧Substrate body

20a‧‧‧第一表面 20a‧‧‧First surface

20b‧‧‧第二表面 20b‧‧‧Second surface

200‧‧‧導電體 200‧‧‧Conductor

200a‧‧‧通孔 200a‧‧‧Through hole

21‧‧‧第一線路結構 21‧‧‧ First line structure

21’‧‧‧第二線路結構 21’‧‧‧ Second line structure

22‧‧‧第一絕緣保護層 22‧‧‧First insulating protective layer

22a‧‧‧凸伸部 22a‧‧‧Projection

22b‧‧‧凹陷部 22b‧‧‧Depression

22’‧‧‧第二絕緣保護層 22’‧‧‧Second insulation protective layer

220a‧‧‧側壁 220a‧‧‧Side wall

23‧‧‧電子元件 23‧‧‧Electronic components

23a‧‧‧作用面 23a‧‧‧action surface

23b‧‧‧非作用面 23b‧‧‧non-acting surface

230‧‧‧導電元件 230‧‧‧Conducting element

24,24’‧‧‧絕緣材 24,24’‧‧‧Insulation

25‧‧‧銲球 25‧‧‧solder ball

D‧‧‧置晶區 D‧‧‧ Crystal setting area

第1A至1A’圖係為習知覆晶式封裝結構的剖視與上視示意圖;第1B至1B’圖係為另一習知覆晶式封裝結構之剖視與上視示意圖;第2A至2D圖係為本發明之封裝基板及封裝結構之製法之剖面示意圖;第2C’圖係為第2C圖之上視示意圖;第2D’圖係為第2D圖之另一實施例;第2D”圖係為第2D圖之上視示意圖;第3A至3C圖係為第2C’圖之另一實施例之局部示意圖;以及第4A至4C圖係為第2C’圖之其它實施例之局部示意圖。 Figures 1A to 1A 'are schematic cross-sectional and top views of a conventional flip-chip package structure; Figures 1B to 1B' are schematic cross-sectional and top views of another conventional flip-chip package structure; section 2A Figure 2D is a schematic cross-sectional view of the manufacturing method of the package substrate and package structure of the present invention; Figure 2C 'is a schematic top view of Figure 2C; Figure 2D' is another embodiment of Figure 2D; 2D "Figures are schematic views of the top view of Figure 2D; Figures 3A to 3C are partial schematic views of another embodiment of Figure 2C '; and Figures 4A to 4C are partial views of other embodiments of Figure 2C' schematic diagram.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The following describes the implementation of the present invention by specific specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如 “上”、“第一”、“第二”、及“一”等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structure, ratio, size, etc. shown in the drawings of this specification are only used to match the contents disclosed in the specification, for those familiar with this skill to understand and read, not to limit the implementation of the present invention The limited conditions, so it does not have the technical significance, any modification of structure, change of proportional relationship or adjustment of size, should not fall within the scope of the invention without affecting the efficacy and the purpose of the invention. The technical content disclosed by the invention can be covered. At the same time, as cited in this manual The terms "upper", "first", "second", and "one" are only for the convenience of description, and are not used to limit the scope of the invention, and the relative relationship changes or adjustments. Without substantial changes in the technical content, it should also be regarded as the scope of the invention.

第2A至2D圖係為本發明之封裝基板2a及封裝結構2之製法之剖面示意圖。 2A to 2D are schematic cross-sectional views of the manufacturing method of the package substrate 2a and the package structure 2 of the present invention.

如第2A圖所示,提供一具有相對之第一表面20a與第二表面20b之基板本體20,並於該基板本體20上形成複數連通該第一表面20a與第二表面20b之通孔200a。 As shown in FIG. 2A, a substrate body 20 having opposing first surface 20a and second surface 20b is provided, and a plurality of through holes 200a connecting the first surface 20a and the second surface 20b are formed in the substrate body 20 .

於本實施例中,該基板本體20之材質可為介電材,例如聚對二唑苯(Polybenzoxazole,簡稱PBO)、聚醯亞胺(Polyimide,簡稱PI)、預浸材(Prepreg,簡稱PP)或其它業界所熟知之材質,並無特別限制。 In this embodiment, the material of the substrate body 20 may be a dielectric material, such as polybenzoxazole (PBO), polyimide (PI), and prepreg (PP). ) Or other materials well known in the industry, there are no special restrictions.

如第2B圖所示,以電鍍銅或其它圖案化方式,分別形成第一線路結構21與第二線路結構21’於該基板本體20之第一表面20a與第二表面20b上,且形成導電體200於該通孔200a中以電性連接該第一線路結構21與第二線路結構21’。另外,該基板本體20亦可為具核心層之電路板或堆疊有複數線路層之板體,並無特別限制。 As shown in FIG. 2B, a first circuit structure 21 and a second circuit structure 21 'are formed on the first surface 20a and the second surface 20b of the substrate body 20 by electroplating copper or other patterning methods, respectively, and forming electrical conductivity The body 200 electrically connects the first circuit structure 21 and the second circuit structure 21 'in the through hole 200a. In addition, the substrate body 20 may also be a circuit board with a core layer or a board body stacked with a plurality of circuit layers, and is not particularly limited.

如第2C圖所示,分別形成第一絕緣保護層22與第二絕緣保護層22’於該基板本體20之第一表面20a與該第一線路結構21上以及該第二表面20b與該第二線路結構21’上,以製成一封裝基板2a。 As shown in FIG. 2C, a first insulating protective layer 22 and a second insulating protective layer 22 'are formed on the first surface 20a of the substrate body 20 and the first circuit structure 21 and the second surface 20b and the first On the two circuit structures 21 ', a package substrate 2a is made.

於本實施例中,如第2C’圖所示,於該基板本體20 之第一表面20a上係定義有一置晶區D,且該第一線路結構21係具有複數位於該置晶區D上之電性接觸墊210及連接該電性接觸墊210之導電跡線211,使該第一絕緣保護層22具有一對應該置晶區D之開口220,以令該些電性接觸墊210與部分導電跡線211外露於該開口220,其中,該開口220之側壁220a係為非平直表面(凹凸狀),故該第一絕緣保護層22係具有自該開口220之側壁220a延伸出的複數凸伸部22a及相對該凸伸部22a的複數凹陷部22b。 In this embodiment, as shown in FIG. 2C ’, on the substrate body 20 A crystal placement area D is defined on the first surface 20a, and the first circuit structure 21 has a plurality of electrical contact pads 210 located on the crystal placement area D and conductive traces 211 connected to the electrical contact pad 210 So that the first insulating protection layer 22 has a pair of openings 220 corresponding to the crystal placement area D, so that the electrical contact pads 210 and part of the conductive traces 211 are exposed to the opening 220, wherein the sidewall 220a of the opening 220 It is a non-flat surface (concavo-convex shape), so the first insulating protective layer 22 has a plurality of convex portions 22a extending from the side wall 220a of the opening 220 and a plurality of concave portions 22b opposite to the convex portions 22a.

再者,該開口220之側壁220a可為不規則凹凸狀或規則凹凸狀。具體地,該規則凹凸狀可為鋸齒型,其凸伸部22a之形狀(即齒形)係為矩形(如第2C’圖所示)、刀劍形(如第3A、3B及4B圖所示)、弧形(如第3C及4C圖所示)、三角形(如第4A圖所示)或其它幾何形狀等,且該些凸伸部22a可依需求互相間隔(如第2C’及3A至3C圖所示)或連續鄰接(如第4A至4C圖所示)。應可理解地,該不規則凹凸狀可為形狀不一致(如混搭各種形狀)、大小不一致(如凸伸部22a之凸伸寬度不同)、排列不一致(如混搭間隔式與鄰接式)或間距不同(如第2C’圖所示)。 Furthermore, the side wall 220a of the opening 220 may be irregularly shaped or irregularly shaped. Specifically, the regular concave-convex shape may be a sawtooth type, and the shape (ie, the tooth shape) of the protrusion 22a is a rectangle (as shown in FIG. 2C ′) and a sword shape (as shown in FIGS. 3A, 3B, and 4B ), Arcs (as shown in Figures 3C and 4C), triangles (as shown in Figure 4A), or other geometric shapes, etc., and the protrusions 22a can be spaced apart from each other as required (such as 2C 'and 3A to Figure 3C) or continuous adjacency (as shown in Figures 4A to 4C). It should be understood that the irregular concave-convex shape may be inconsistent in shape (e.g. mix and match various shapes), inconsistent in size (e.g. different protrusion widths of the protrusion 22a), inconsistent in arrangement (e.g. mix-and-match interval type and adjacent type) or different in pitch (As shown in Figure 2C ').

又,該第二絕緣保護層22’具有複數開孔220’,以令該第二線路結構21’之部分表面對應外露於該些開孔220’,俾供作為外接墊或植球墊。 In addition, the second insulating protective layer 22 'has a plurality of openings 220', so that a part of the surface of the second circuit structure 21 'is exposed to the openings 220' correspondingly, so as to serve as an external pad or a ball pad.

另外,該第一與第二絕緣保護層22,22’係作為防銲層,其使用如綠漆或其它材質製作。 In addition, the first and second insulating protective layers 22, 22 'are used as solder masks, which are made of green paint or other materials.

如第2D圖所示,將至少一電子元件23結合至該封裝基板2a之基板本體20之第一表面20a之側上,再形成絕緣材24於該電子元件23與該封裝基板2a之間,且於該第二線路結構21’之外露表面(即外接墊或植球墊)上結合銲球25。 As shown in FIG. 2D, at least one electronic component 23 is bonded to the side of the first surface 20a of the substrate body 20 of the packaging substrate 2a, and an insulating material 24 is formed between the electronic component 23 and the packaging substrate 2a, And the solder balls 25 are combined on the exposed surface of the second circuit structure 21 '(ie the external pad or the ball pad).

於本實施例中,該電子元件23係為主動元件、被動元件或其組合者,且該主動元件係例如晶片,而該被動元件係例如電阻、電容及電感。具體地,該電子元件23具有相對之作用面23a與非作用面23b,且該作用面23a具有複數之電極墊(圖未示)並藉由複數導電元件230結合並電性連接至該些電性接觸墊210,其中,該些導電元件230係例如含有銲錫材料或金屬塊(如銅柱)之塊體。或者,該電子元件23可藉由複數銲線(圖略)以打線方式電性連接該些電性接觸墊210;亦或,該電子元件23可直接接觸該些電性接觸墊210。因此,有關該電子元件23電性連接該第一線路結構21之方式並無限制。 In this embodiment, the electronic component 23 is an active component, a passive component, or a combination thereof, and the active component is, for example, a chip, and the passive component is, for example, a resistor, a capacitor, and an inductor. Specifically, the electronic component 23 has opposing active surfaces 23a and non-active surfaces 23b, and the active surface 23a has a plurality of electrode pads (not shown) and is combined by a plurality of conductive elements 230 and electrically connected to the electrical components Sexual contact pad 210, wherein the conductive elements 230 are blocks containing solder material or metal blocks (such as copper pillars), for example. Alternatively, the electronic component 23 can be electrically connected to the electrical contact pads 210 by wire bonding (not shown); or, the electronic component 23 can directly contact the electrical contact pads 210. Therefore, there is no limitation on the manner in which the electronic component 23 is electrically connected to the first circuit structure 21.

再者,該絕緣材24係為底膠以包覆該些導電元件230。或者,如第2D’圖所示,該絕緣材24’係為封裝材,如聚醯亞胺(polyimide,簡稱PI)、乾膜(dry film)、環氧樹脂(epoxy),其可用壓合(lamination)或模壓(molding)之方式形成,且該封裝材同時包覆電子元件23。 Furthermore, the insulating material 24 is a primer to cover the conductive elements 230. Or, as shown in FIG. 2D ', the insulating material 24' is an encapsulating material, such as polyimide (PI), dry film, epoxy, which can be pressed together (lamination) or molding (molding), and the packaging material simultaneously covers the electronic component 23.

又,如第2C’及2D”圖所示,可利用該第一絕緣保護層22之凹陷部22b作為連通該開口220之溝槽,以供該絕緣材24,24’有效流入該電子元件23與該封裝基板2a之 間。因此,本發明之製法係將該電子元件23結合至該封裝基板2a之置晶區D之電性接觸墊210上,再形成絕緣材24,24’,並令該絕緣材24,24’可沿該凹陷部22b所形成之溝槽順利填入該電子元件23與該封裝基板2a之間。 Furthermore, as shown in FIGS. 2C ′ and 2D ″, the recess 22b of the first insulating protection layer 22 can be used as a groove communicating with the opening 220 for the insulating materials 24, 24 ′ to flow into the electronic component 23 effectively With the package substrate 2a between. Therefore, the manufacturing method of the present invention is to bond the electronic component 23 to the electrical contact pad 210 of the crystal placement area D of the package substrate 2a, and then form the insulating materials 24, 24 ', and make the insulating materials 24, 24' The groove formed along the recess 22b is smoothly filled between the electronic component 23 and the package substrate 2a.

另外,該第一絕緣保護層22之側壁220a之凸伸部22a係延伸至該置晶區D之範圍內,使其可減少該第一線路結構21外露於該開口220之表面(即該導電跡線211之外露頂面)之面積。例如,該第一線路結構21原本外露於該置晶區D中之面積之比例為62.7%,但經由該第一絕緣保護層22之凹凸側壁220a(凸伸部22a)遮蓋部分該第一線路結構21後,該第一線路結構21外露於該置晶區D中之面積之比例減為58.9%。具體地,第1B’圖所示之導電跡線111外露於該置晶區D中之面積係少於第2C’圖所示之導電跡線211外露於該置晶區D中之面積。 In addition, the protrusion 22a of the side wall 220a of the first insulating protection layer 22 extends into the range of the crystal placement region D, so that it can reduce the exposure of the first circuit structure 21 to the surface of the opening 220 (i.e. the conductive The area of the top surface outside the trace 211). For example, the ratio of the area of the first circuit structure 21 originally exposed in the crystal placement area D is 62.7%, but part of the first circuit is covered by the concave-convex sidewall 220a (protruding portion 22a) of the first insulating protective layer 22 After the structure 21, the ratio of the area of the first circuit structure 21 exposed in the crystal placement area D is reduced to 58.9%. Specifically, the area of the conductive trace 111 shown in FIG. 1B 'exposed in the crystal placement area D is less than the area of the conductive trace 211 shown in FIG. 2C' exposed in the crystal placement area D.

本發明之製法中,係藉由該第一絕緣保護層22之開口220之側壁220a呈非平直表面(凹凸狀),以令部分該第一絕緣保護層22(凸伸部22a)延伸至該置晶區D中,以覆蓋外露於該置晶區D中之部分第一線路結構21,使該第一線路結構21外露於該置晶區D中之面積之比例降低,故相較於習知技術,本發明之製法能使該絕緣材24接觸結合較多的第一絕緣保護層22而接觸較少的第一線路結構21,即減少該絕緣材24與該第一線路結構21之接觸面積,以避免該絕緣材24發生脫層。 In the manufacturing method of the present invention, the side wall 220a of the opening 220 of the first insulating protection layer 22 is a non-flat surface (concave-convex shape), so that part of the first insulating protection layer 22 (projection 22a) extends to In the crystal placement area D, a portion of the first circuit structure 21 exposed in the crystal placement area D is covered, so that the ratio of the area of the first circuit structure 21 exposed in the crystal placement area D is reduced, so compared to According to the prior art, the manufacturing method of the present invention can make the insulating material 24 contact with the first insulating protective layer 22 which is more combined with less contact with the first circuit structure 21, that is, reduce the number of the insulating material 24 and the first circuit structure 21 The contact area is to avoid delamination of the insulating material 24.

本發明復提供一種封裝基板2a,係包括:一基板本體 20、第一線路結構21以及第一絕緣保護層22。 The present invention further provides a package substrate 2a, which includes: a substrate body 20. The first circuit structure 21 and the first insulating protection layer 22.

所述之基板本體20係具有相對之第一表面20a與第二表面20b,且於該第一表面20a上定義有一置晶區D。 The substrate body 20 has a first surface 20a and a second surface 20b opposite to each other, and a crystal placement area D is defined on the first surface 20a.

所述之第一線路結構21係形成於該基板本體20之第一表面20a上。 The first circuit structure 21 is formed on the first surface 20a of the substrate body 20.

所述之第一絕緣保護層22係形成於該基板本體20之第一表面20a與該第一線路結構21上,且該第一絕緣保護層22具有對應該置晶區D之開口220,以令部分該第一線路結構21外露於該開口220,其中,該開口220之側壁220a呈非平直表面(呈凹凸狀),故該第一絕緣保護層22係具有自該開口220之側壁220a延伸出的複數凸伸部22a及複數凹陷部22b,以令部分該第一絕緣保護層22(凸伸部22a)延伸至該置晶區D中以遮蓋部分該第一線路結構21。 The first insulating protection layer 22 is formed on the first surface 20a of the substrate body 20 and the first circuit structure 21, and the first insulating protection layer 22 has an opening 220 corresponding to the crystal region D, A part of the first circuit structure 21 is exposed to the opening 220, wherein the side wall 220a of the opening 220 has a non-flat surface (concave and convex), so the first insulating protective layer 22 has a side wall 220a from the opening 220 The plurality of protruding portions 22a and the plurality of recessed portions 22b extend so that part of the first insulating protective layer 22 (protruding portion 22a) extends into the crystal placement region D to cover part of the first circuit structure 21.

於一實施例中,該開口220之側壁220a係為凹凸狀。例如,該凹凸狀係為鋸齒型;或者,該凹凸狀之凸伸部22a係為矩形、刀劍形、弧形或三角形。 In one embodiment, the side wall 220a of the opening 220 is concave and convex. For example, the concave-convex shape is zigzag; or, the concave-convex protrusion 22a is rectangular, sword-shaped, arc-shaped, or triangular.

本發明亦提供一種封裝結構2,係包括上述任一實施例之封裝基板2、一結合於該置晶區D上之電子元件23、以及形成於該電子元件23與該封裝基板2a之間的絕緣材24,24’,且該絕緣材24,24’係為底膠或封裝材。該絕緣材24,24’可透過該凹陷部22b作為連通該開口220之溝槽,以填充至該電子元件23與該封裝基板2a之間 The present invention also provides a packaging structure 2, which includes the packaging substrate 2 of any of the foregoing embodiments, an electronic component 23 bonded to the crystal placement area D, and the electronic component 23 formed between the electronic component 23 and the packaging substrate 2a Insulation materials 24, 24 ', and the insulation materials 24, 24' are primers or packaging materials. The insulating material 24, 24 'can pass through the recess 22b as a groove communicating with the opening 220 to fill between the electronic component 23 and the packaging substrate 2a

綜上所述,本發明之封裝結構及其封裝基板,藉由該形成於封裝基板置晶區之絕緣保護層開口呈非平直表面 (凹凸表面)之設計,以遮蓋該置晶區中之部分線路結構,使該線路結構外露於該置晶區中之面積之比例降低,而減少該絕緣材與該線路結構之接觸面積,因而能避免該絕緣材發生脫層,故能提高產品良率。 In summary, the package structure and the package substrate of the present invention have a non-flat surface due to the opening of the insulating protective layer formed in the crystal placement area of the package substrate (Concave and convex surface) design to cover part of the circuit structure in the crystal placement area, so that the ratio of the area of the circuit structure exposed in the crystal placement area is reduced, and the contact area between the insulating material and the circuit structure is reduced, so The delamination of the insulating material can be avoided, so the product yield can be improved.

上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are used to exemplify the principles and effects of the present invention, rather than to limit the present invention. Anyone who is familiar with this skill can modify the above embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be as listed in the scope of patent application mentioned later.

Claims (9)

一種封裝基板,係包括:基板本體,係於一表面上形成有線路結構並定義有至少一置晶區;以及絕緣保護層,係形成於該基板本體與該線路結構上,其中,該絕緣保護層具有對應該置晶區之開口,以令部分該線路結構外露於該開口,且該絕緣保護層具有自該開口之側壁延伸出的複數凸伸部及複數凹陷部,使該開口之側壁呈凹凸狀,以令部分該絕緣保護層延伸至該置晶區中,並藉由該凸伸部遮蓋外露於該置晶區之部分該線路結構。A package substrate includes a substrate body with a circuit structure formed on a surface and defining at least one crystal placement area; and an insulating protection layer formed on the substrate body and the circuit structure, wherein the insulation protection The layer has an opening corresponding to the crystal placement region, so that part of the circuit structure is exposed to the opening, and the insulating protective layer has a plurality of protrusions and a plurality of depressions extending from the side wall of the opening, so that the side wall of the opening is The concave-convex shape makes part of the insulating protective layer extend into the crystal placement region, and covers the part of the circuit structure exposed to the crystal placement region by the protrusion. 如申請專利範圍第1項所述之封裝基板,其中,該凸伸部係為矩形、刀劍形、弧形或三角形。The package substrate as described in item 1 of the patent application range, wherein the protrusion is rectangular, sword-shaped, arc-shaped or triangular. 如申請專利範圍第1項所述之封裝基板,其中,該凹凸狀係為鋸齒型。The package substrate as described in item 1 of the patent application range, wherein the concave-convex shape is zigzag. 一種封裝結構,係包括:封裝基板,係包含有:基板本體,係於一表面上形成有線路結構並定義有至少一置晶區;及絕緣保護層,係形成於該基板本體與該線路結構上,其中,該絕緣保護層具有對應該置晶區之開口,以令部分該線路結構外露於該開口,且該絕緣保護層具有自該開口之側壁延伸出的複數凸伸部及複數凹陷部,使該開口之側壁呈凹凸狀,以令部分該絕緣保護層延伸至該置晶區中,並藉由該凸伸部遮蓋外露於該置晶區之部分該線路結構;至少一電子元件,係結合於該置晶區上;以及絕緣材,係形成於該電子元件與該封裝基板之間。A packaging structure includes: a packaging substrate, which includes: a substrate body with a circuit structure formed on a surface and defining at least one crystal placement area; and an insulating protective layer formed on the substrate body and the circuit structure In this case, the insulating protection layer has an opening corresponding to the crystal placement region, so that part of the circuit structure is exposed to the opening, and the insulating protection layer has a plurality of protrusions and a plurality of depressions extending from the side wall of the opening To make the side wall of the opening concave-convex, so that part of the insulating protective layer extends into the crystal placement area, and the portion of the circuit structure exposed to the crystal placement area is covered by the convex portion; at least one electronic component, It is bonded on the crystal placement area; and an insulating material is formed between the electronic component and the packaging substrate. 如申請專利範圍第4項所述之封裝結構,其中,該絕緣材係為底膠或封裝材。The packaging structure as described in item 4 of the patent application scope, wherein the insulating material is a primer or a packaging material. 如申請專利範圍第5項所述之封裝結構,其中,該封裝材復包覆該電子元件。The packaging structure as described in item 5 of the patent application scope, wherein the packaging material overcoats the electronic component. 如申請專利範圍第4項所述之封裝結構,其中,該凸伸部係為矩形、刀劍形、弧形或三角形。The packaging structure as described in item 4 of the patent application scope, wherein the protruding portion is rectangular, sword-shaped, curved or triangular. 如申請專利範圍第4項所述之封裝結構,其中,該絕緣材係透過該凹陷部作為連通該開口之溝槽,以填充至該電子元件與該封裝基板之間。The packaging structure as described in item 4 of the patent application range, wherein the insulating material is used as a groove communicating with the opening through the recessed portion to fill between the electronic component and the packaging substrate. 如申請專利範圍第4項所述之封裝結構,其中,該凹凸狀係為鋸齒型。The packaging structure as described in item 4 of the patent application scope, wherein the concave-convex shape is zigzag.
TW106127460A 2017-08-14 2017-08-14 Package structure and its package substrate TWI629756B (en)

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TW106127460A TWI629756B (en) 2017-08-14 2017-08-14 Package structure and its package substrate
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TW201025462A (en) * 2008-12-17 2010-07-01 United Test Ct Inc Semiconductor device and method for fabricating the same

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