TWI629523B - Adjustable wavelength receiver - Google Patents

Abstract

An adjustable wavelength receiver with a grating semiconductor filter, which uses a refractive index of a medium to change a transmission wavelength characteristic. When an incident optical signal enters a grating semiconductor filter, the grating is changed by controlling a current input to the grating region. The refractive index of the region is changed to change the wavelength of the optical signal to be selected, and the optical signal selected by the grating semiconductor filter is converted into an electrical signal by the optical detector. The wavelength-adjustable receiver of the present invention can be used for receiving the TWDM-PON ONU. It meets the needs of colorless light source (Colorless).

Description

Adjustable wavelength receiver

The present invention relates to a wavelength-adjustable receiver, and more particularly to an adjustable wavelength receiver using a grating semiconductor filter.

With the evolution of the times, people's life style has changed, and there is more demand for life and entertainment. Many novel audio-visual service models have sprung up, such as mobile networks, high-definition video, OTT ( Over The Top) services, Live Stream, etc., these audio and video services need to be supported by fixed-line broadband, so NG-PON2 (Next Generation PON, Next Generation Passive Optical Network) technology has been set up in the FSAN organization. To increase the transmission rate of the fixed network.

In NG-PON2, the Time and Wavelength Division Multiplexing Passive Optical Network (TWDM-PON) is a multi-wavelength system that can be used in multiple optical network units (ONUs). The wavelength is transmitted. The optical network unit end of TWDM-PON adopts wavelength-adjustable optical components, including wavelength-adjustable laser and wavelength-adjustable receivers, which meet the needs of colorless light sources, simplify the supply and preparation complexity, and enjoy dynamic resource allocation and channel. Switch protection, energy saving and other advantages. However, the well-known wavelength-adjustable optical component technology, in the application of the access network, due to factors such as high process threshold and immaturity, the cost is too high, which is the main reason why the TWDM-PON equipment has not yet been commercialized. .

In summary, how to provide a technical solution with an adjustable wavelength receiver with low process threshold and mass production characteristics is a technical problem that needs to be solved in the field.

In order to solve the above problems, an object of the present invention is to provide a wavelength-adjustable receiver as an optical receiver of an optical network unit and used in a TWDM-PON device.

In order to achieve the above object, the present invention provides a wavelength-adjustable receiver comprising a grating semiconductor filter, a photodetector, a substrate, a fiber fixing portion, a first waveguide region, and a first substrate. The second waveguide region and the third waveguide region have a grating semiconductor filter disposed between the first waveguide region and the second waveguide region, and the photodetector is disposed between the second waveguide region and the third waveguide region. The fiber fixing portion is used for fixing the external optical fiber, and the external signal light is introduced into the first waveguide region by the optical fiber. After the signal light passes through the first waveguide region, the semiconductor filter enters the grating, and the grating semiconductor structure filter is used. The grating region can change the refractive index of the grating region by inputting current to select a wavelength that can pass in the signal light, and the filtered optical signal passes through the second waveguide region, and then enters the optical detector, so that the optical detector receives the filtered signal. Signal light and turn it into a telecommunication signal.

To achieve the above object, the present invention further provides a wavelength-adjustable receiver comprising a substrate, a semiconductor filter with a grating, a photodetector, a first lens and a second lens. The semiconductor filter with grating, the photodetector, the first lens and the second lens are all disposed on the substrate. A fiber fixing portion is further disposed on the substrate, one side of which is used for fixing the external optical fiber, and the external signal light is introduced by the optical fiber, and the other side of the optical fiber fixing portion is provided with the first lens, and the first lens is away from the optical fiber fixing portion. a semiconductor filter with a grating is disposed on one side, a second lens is disposed on a side of the semiconductor filter with the grating away from the first lens, and the photodetector is disposed on the second lens One side. After the signal light is introduced, it passes through the first lens and then enters the semiconductor filter with the grating. The grating region of the grating semiconductor structure filter can change the refractive index of the grating region by input current to select the signal light to pass. The wavelength of the filtered optical signal passes through the second lens and then enters the optical detector, allowing the optical detector to receive the filtered optical signal and convert it into an electrical signal.

The manufacturing process of the wavelength-adjustable receiver is: using a Planar Lightwave Circuit technology on the substrate to form a waveguide region, using micro-developing technology and chemical etching, or using electron cyclotron resonance active ion etching (electron) The method of cyclotron resonance reactive ion ctch (ECR-RIE) etches an optical waveguide and a substrate in a specific region to form a metal conductive layer region, and the metal conductive layer region divides the waveguide into a first waveguide region, a second waveguide region, and a third Waveguide area. Then, using a micro-developing technique and a thin film technique, respectively forming a metal conductive layer in the metal conductive layer region, and then using a conductive adhesive to adhere the grating semiconductor filter to the metal conductive layer between the first waveguide region and the second waveguide region, The photodetector is adhered to the metal conductive layer between the second waveguide region and the third waveguide region.

In summary, the wavelength adjustment speed is fast, the process threshold is low and stable, and the mass production characteristics are achieved, the receiver cost is reduced, and the utility model has significant practical benefits and competitiveness.

100‧‧‧Substrate

601‧‧‧Substrate

101‧‧‧Substrate

602‧‧‧N type coating

111‧‧‧First waveguide area

603‧‧‧ quaternary material layer

112‧‧‧Second waveguide area

604‧‧‧ active layer

113‧‧‧ Third waveguide area

605‧‧‧Primary P-type coating

121‧‧‧First metal conductive layer

701‧‧‧active area

122‧‧‧Second metal conductive layer

702‧‧‧Grating area

13‧‧‧Semiconductor filter with grating

703‧‧‧Non-grating area

14‧‧‧ Detector

704‧‧‧P type coating

15‧‧‧Fiber

705‧‧‧ Ohmic contact layer

151‧‧‧ fiber core

806‧‧‧patterned insulation

16‧‧‧Fiber fixing department

807‧‧‧P type contact metal layer

201‧‧‧Substrate

808‧‧‧N type contact metal layer

202‧‧‧N type coating

907‧‧‧First ohmic contact layer

203‧‧‧ quaternary material layer

908‧‧‧second ohmic contact layer

304‧‧‧Grating area

909‧‧‧3 ohm contact layer

305‧‧‧Non-grating area

910‧‧‧First P-type contact metal layer

306‧‧‧P type coating

911‧‧‧Second P-type contact metal layer

307‧‧‧ Ohmic contact layer

912‧‧‧ Third P-type contact metal layer

406‧‧‧patterned insulation

913‧‧‧First low reflection layer

407‧‧‧P type contact metal layer

914‧‧‧Second low reflection layer

408‧‧‧N type contact metal layer

1000‧‧‧Substrate

506‧‧‧First ohmic contact layer

1001‧‧‧Substrate

507‧‧‧second ohmic contact layer

1010‧‧‧First spherical lens

508‧‧‧First P-type contact metal layer

1011‧‧‧Second spherical lens

509‧‧‧Second P-type contact metal layer

1020‧‧‧First metal conductive layer

510‧‧‧First low reflection layer

1021‧‧‧Second metal conductive layer

511‧‧‧Second low reflection layer

1 is a structural diagram of a receiver of a first type of adjustable wavelength according to the present invention.

2 is a flow chart I of the fabrication of a first semiconductor filter with a grating according to the present invention.

3 is a flow chart II of the fabrication of the first semiconductor filter with a grating according to the present invention.

4 is a flow chart III of the fabrication of the first semiconductor filter with a grating according to the present invention.

FIG. 5 is a flow chart IV of the fabrication of the first semiconductor filter with grating according to the present invention.

6 is a flow chart I of fabricating a second semiconductor filter with a grating according to the present invention.

FIG. 7 is a flow chart II of manufacturing a second semiconductor filter with a grating according to the present invention.

FIG. 8 is a flow chart III of manufacturing a second semiconductor filter with a grating according to the present invention.

FIG. 9 is a flow chart IV showing the fabrication of a second semiconductor filter having a grating according to the present invention.

Figure 10 is a structural view of a second type of adjustable wavelength receiver of the present invention.

The specific embodiments are described below to illustrate the embodiments of the invention, but are not intended to limit the scope of the invention.

Example 1

Please refer to FIG. 1 , which is a structural diagram of a receiver of a first type of adjustable wavelength according to the present invention. The manufacturing method and the structure thereof are as follows: planar optical waveguide technology is used on a substrate 100 of a semiconductor (eg, a crystal plate), and chemistry is utilized. Vapor Deposition (CVD) deposits cerium oxide (SiO ₂ ) onto the substrate 100 to form a low refractive index film, and then incorporates a bismuth compound (SiO ₂ -P ₂ O ₅ ) to form a high refractive index film. Then, the photoresist is covered, and the other portions are etched away by electron cyclotron resonance reactive ion etching, and finally the cover layer is covered to form a waveguide.

The optical waveguide of the specific region and the substrate 100 are etched to form two separate metal conductive layer regions, which divide the waveguide into the first waveguide region 111, the second waveguide region 112, and the third waveguide region 113. Using a micro-developing technique and a thin film technique, gold or platinum is plated with the above-mentioned two metal conductive layer regions by an electron vaporizer to form a first metal conductive layer 121 and a second metal conductive layer 122, and the second metal conductive layer is used as Conductive and define the location of the semiconductor filter and detector. Using a conductive adhesive to separately apply a semiconductor filter 13 with a grating The photoconductor 14 is adhered to the first metal conductive layer 121 and the second metal conductive layer 122.

The outer optical fiber 15 is fixed on the substrate 100 by a fiber fixing portion 16 (refer to FIG. 1, the substrate 101 is an extension of the substrate 100), the substrate may be a germanium substrate, and one end of the optical fiber 15 is connected to one end of the first waveguide region 111 or Proximity is introduced to introduce the optical signal into the first waveguide region 111, and then the optical signal is guided by the first waveguide region 111 to inject the semiconductor filter 13 having the grating disposed on the other side of the first waveguide region.

The input current is input to the grating region of the grating semiconductor filter 13, and the passable wavelength is selected, and the filtered signal light is guided by the second waveguide region 112 to inject the photodetector 14 disposed on the other side of the second waveguide region. The optical signal is converted into an electrical signal by the optical detector 14. The third waveguide region 113 is only the structure left in the process.

The fiber fixing portion 16 may be made of glass, and the photodetector 14 may be a positive-negative photodiode (PIN Photodiode), an avalanche photodiode (APD), or a waveguide. A positive-negative-negative photodiode (PIN Photodiode) is adhered to an aluminum nitride (AlN) substrate.

Example 2

Please refer to FIG. 2 to FIG. 5 , which are flowcharts for fabricating a semiconductor filter with a grating according to the present invention. The following is a description of the fabrication process of the first semiconductor filter with a grating according to the present invention. How to invent the structure of a semiconductor filter with a grating. The semiconductor filter with grating provided in the embodiment can be applied to the receiver of the adjustable wavelength in the first embodiment.

First, referring to FIG. 2, a N-type cladding layer composed of N-type indium phosphide is sequentially epitaxially grown on one surface of a substrate 201 made of indium phosphide (InP) material. 202, further growing a quaternary 203 composed of indium gallium arsenide (InGaAsP). Among them, the indium phosphide substrate is a commonly used substrate for generally growing long-wavelength IIIV semiconductors, the N-type cladding layer 202 is provided as an N-type confinement layer of light, and the quaternary material layer 203 is used as a waveguide layer.

Next, referring to FIG. 3, on the quaternary material layer 203, along the crystal orientation of the epitaxial wafer of FIG. 2 [01 ], making grating regions and non-grating regions. The steps are as follows: the grating region is defined by the optical lithography technique on the quaternary material layer 203, and the grating is defined by electron beam etching, phase mask technology or holographic interferometry, and the grating is transferred to the quaternary by chemical etching. On the material layer 203, the quaternary material layer 203 is divided into a grating region 304 containing a grating and a non-grating region 305 having no grating. Further, on the quaternary material layer 203 on which the grating is formed, secondary epitaxial growth is performed, and a P type cladding layer 306 composed of P-type indium phosphide is grown, and indium phosphorus indium arsenide (InGaAs) is grown. The ohmic contact layer 307 is formed. Among them, the P-type cladding layer 306 is a P-type confinement layer provided as light, and the ohmic contact electric layer 307 is a conductive layer provided as an element.

Next, in the structure of FIG. 3, a ridge-shaped waveguide structure in the form of a ridge mesa is formed, which is used as an optical waveguide, so that signal light can be confined to the ridge-like region and along The light path of the ridge waveguide (ie, the P-type cladding layer) extends in the direction of extension. The fabrication steps are as follows: a strip-shaped waveguide is defined along the crystal orientation [011] of the epitaxial wafer of FIG. 3 using optical lithography, and then the P-type cladding layer 306 and the ohmic contact layer 307 are etched using chemical etching, that is, For a ridge-shaped waveguide structure, a front view of the ridge-shaped waveguide can be seen in FIG. 4, which is a view taken at a 90-degree angle with respect to FIG.

Then, a patterned insulating layer 406 is formed on the epitaxial wafer on which the ridge waveguide structure is completed, which is used for insulation. Through this step, the epitaxial wafer will expose the top semiconductor, and the user can input current through the exposed region. . The steps are as follows: using a plasma-assisted chemical vapor deposition (PECVD), a tantalum nitride (SiNx) is grown on the entire epitaxial wafer of the completed ridge waveguide, and then spread on the tantalum nitride. The upper photoresist is etched using an Oxygen plasma until the tantalum nitride is etched to the top of the exposed ridge waveguide, and then etched with a CF ₄ plasma to expose the nitridation at the top of the ridge waveguide. Thereafter, until the semiconductor layer (ohmic contact layer) is exposed, and then the photoresist is removed, the patterned insulating layer 406 is completed.

Next, the electrodes of the components are defined on the epitaxial wafer for current input. First, using an image reversal photoresist, combined with optical lithography, the electrode separation pattern is defined on the top of the ridge waveguide, and then exposed to ultraviolet light and developed to expose the ohmic contact layer 307. The P-type contact metal layer 407 is grown on the ohmic contact layer 307 by using a vacuum electron beam evaporation system. After the evaporation is completed, the epitaxial wafer is bubbled in acetone to remove the unnecessary metal, thereby forming the first P-type contact. The metal layer 508 and the second P-type contact metal layer 509. Then, the ohmic contact layer 307 is chemically etched to form a first ohmic contact layer 506 and a second ohmic contact layer 507, as shown in FIG. 5, the first ohmic contact layer is disposed on the P-type pleat. On the cladding, and relative to the grating region, the second ohmic contact layer is disposed on the P-type cladding layer and opposite to the non-grating region.

Wherein, the foregoing patterned insulating layer 406 will cover the first ohmic contact layer 506, the second ohmic contact layer 507, the first P-type contact metal layer 508 and the second P-type contact metal layer 509, and the exposed portion The first ohmic contact layer 506 and the second ohmic contact layer 507. The first P-type contact metal layer 508 is disposed on the first ohmic contact layer 506 and is not covered by the patterned insulating layer 406. The second P-type contact metal layer 509 is disposed on the second ohmic contact layer 507. The area covered by the patterned insulating layer 406.

Next, the indium phosphide (InP) substrate which has completed the above steps is thinned, and the N-type contact metal layer 408 is vapor-deposited on the other side of the epitaxial wafer, that is, the other side of the substrate 201 with respect to the long ridge-shaped waveguide. After annealing and cutting, a grating semiconductor structure filter is obtained. Then, on both sides of the epitaxial wafer, that is, on both sides of the epitaxial wafer perpendicular to the optical path of the signal light (the ridge waveguide extending direction), a vacuum electron beam evaporation system is used to evaporate the second low reflection layer (the first low layer) The reflective layer 510 and the second low reflective layer 511) are as shown in FIG. 5, wherein the low reflective layer must cover at least the P-type cladding layer. The low reflection layer is used to reduce the reflectivity of light to destroy the resonant cavity, and also to increase the proportion of incident signal light.

In practical applications, the incident optical signal is entered into the filter by the first low reflection layer 510. When the optical signal that can pass is adjusted, the current input by the first P-type contact metal layer 508 and the second P-type contact metal layer 509 is controlled to select a passable wavelength. When a current is input to the first P-type contact metal layer 508, the refractive index of the grating region 304 will be changed to change the wavelength that can pass. Similarly, by inputting a current in the second P-type contact metal layer 509 and changing the refractive index of the non-grating region 305 of the quaternary material layer 203, the wavelength through which the pass can be fine-tuned. Finally, the filtered optical signal exits the filter by the second low reflection layer 511.

Example 3

Please refer to FIG. 6 to FIG. 9 , which are flowcharts for fabricating a second semiconductor filter with a grating according to the present invention. Hereinafter, a description will be given of a second semiconductor chip filter with a grating according to the present invention. How to invent the structure of a semiconductor filter with a grating. The semiconductor filter with grating provided in the embodiment can be applied to the receiver of the adjustable wavelength in the first embodiment.

Referring to FIG. 6, first, epitaxially epitaxially formed on the substrate 601 of indium phosphide material. An N-type cladding layer 602 composed of N-type indium phosphide, a quaternary material layer 603 composed of gallium indium arsenide, an active layer 604, and a primary P-type coating layer composed of P-type indium phosphide 605. Among them, the indium phosphide substrate is a commonly used substrate for generally growing long-wavelength IIIV semiconductors, the N-type cladding layer 602 is provided as an N-type confinement layer of light, and the quaternary material layer 603 is used as a waveguide layer.

Next, please refer to FIG. 7, first, along the epitaxial wafer [01] in FIG. In the direction of the optical lithography, the active region 701 is defined by using the chemical lithography to remove the active P-type 605 and the active region 604 in the active region 701, and the active region 701 is completed. The quaternary material layer 603 is exposed, wherein the active region 701 has the effect of amplifying the input optical signal.

The optical lithography technique is then used to define the extent of the grating region, the grating is defined by electron beam etching, phase mask technique or holographic interferometry, and the grating is transferred to the quaternary material layer 603 via chemical etching, the quaternary material layer 603 is divided into a raster region 702 having a grating and a non-grating region 703 having no grating. After the grating region is fabricated, secondary epitaxy is performed, and a P-type cladding layer 704 composed of P-type indium phosphide and an ohmic contact composed of indium phosphorus arsenide (InGaAs) are grown. Electrical layer 705. Among them, the P-type cladding layer 704 is a P-type confinement layer provided as light, and the ohmic contact electric layer 705 is a conductive layer provided as an element.

Next, in the structure of FIG. 7, a ridge-shaped waveguide structure in the form of a ridge mesa is formed, which is used as an optical waveguide, so that signal light can be confined to the ridge-like region and along the edge. The light path of the ridge waveguide (ie, the N-type cladding layer) extends in the direction of extension. The fabrication steps are as follows: a strip-shaped waveguide is defined along the direction of the epitaxial wafer [011] of FIG. 7 using optical lithography, and then the P-type cladding layer 704 and the ohmic contact layer 705 are etched using chemical etching, ie, the ridge is completed. A front view of a ridge waveguide, see Fig. 8, is a view taken at a 90 degree angle with respect to Fig. 7.

Then, a patterned insulating layer 806 is formed on the epitaxial wafer on which the ridge waveguide structure is completed, which is used for insulation. Through this step, the epitaxial wafer will expose the top semiconductor, and the user can input current through the exposed region. . The steps are as follows: using plasma-assisted chemical vapor deposition (PECVD) to grow tantalum nitride (SiNx) on the entire epitaxial wafer of the completed ridge waveguide, then depositing photoresist on the tantalum nitride and using oxygen Oxygen plasma etches the photoresist until the tantalum nitride on top of the ridge waveguide is exposed, and then the tantalum nitride on the top of the ridge waveguide is exposed by CF ₄ plasma until the semiconductor layer is exposed. The photoresist is then removed, ie, the patterned insulating layer 806 is completed.

Next, the electrodes of the components are defined on the epitaxial wafer for current input. First, a photoresist having image reversal characteristics is used, and an optical lithography technique is used to define an electrode separation pattern on a region of the ridge waveguide, and then exposed to ultraviolet light and developed to expose the ohmic contact layer 705. Then, a P-type contact metal layer 807 is grown on the ohmic contact layer 705 by using a vacuum electron beam evaporation system. After the evaporation is completed, the epitaxial wafer is bubbled in acetone to remove the unnecessary metal, thereby forming the first P-type contact. The metal layer 910, the second P-type contact metal layer 911, and the third P-type contact metal layer 912. Then, the ohmic contact layer 705 is chemically etched to form a first ohmic contact layer 907, a second ohmic contact layer 908 and a third ohmic contact layer 909. As shown in FIG. 9, the first ohmic contact layer is disposed. On the P-type cladding layer, and opposite to the grating region, the second ohmic contact layer is disposed on the P-type cladding layer, and is not opposite to the grating region and the active region, and the third ohmic contact layer is disposed On the P-type cladding layer, and relative to the active layer.

The foregoing patterned insulating layer 806 will cover the first ohmic contact layer 907, the second ohmic contact layer 908, the third ohmic contact layer 909, and the first P-type contact metal layer 910 and the second P-type contact. Metal layer 911, and exposed portion of first ohmic contact layer 910 and second The ohmic contact layer 911. The first P-type contact metal layer 910 is disposed on the first ohmic contact layer 907 and is not covered by the patterned insulating layer 806. The second P-type contact metal layer 911 is disposed on the second ohmic contact layer 908. The region covered by the patterned insulating layer 806, the third P-type contact metal layer 912 is a region disposed on the third ohmic contact layer 909 that is not covered by the patterned insulating layer 806.

Next, the indium phosphide (InP) substrate that has completed the above steps is thinned, and the N-type contact metal layer 808 is vapor-deposited on the other side of the epitaxial wafer, that is, the other side of the substrate 601 with respect to the long ridge-shaped waveguide. After annealing and cutting, a grating semiconductor structure filter is obtained. Then, on both sides of the epitaxial wafer, that is, on both sides of the epitaxial wafer perpendicular to the optical path of the signal light (the ridge waveguide extending direction), a vacuum electron beam evaporation system is used to evaporate the second low reflection layer (the first low layer) The reflective layer 913 and the second low reflective layer 914) are as shown in FIG. 9, wherein the low reflective layer must cover at least the P-type cladding layer. The low reflection layer is used to reduce the reflectivity of light to destroy the resonant cavity, and also to increase the proportion of incident signal light.

In practical applications, the incident light signal enters the filter by the first low reflection layer 913. When the light signal of the passable wavelength is to be adjusted, that is, by controlling the current input by the first P-type contact metal layer 910 and the second P-type contact metal layer 911, the passable wavelength is selected.

When the current 910 is input to the first P-type contact metal layer, the refractive index of the grating region 702 will change, and the wavelength that can pass can be changed. Similarly, by inputting a current to the second P-type contact metal layer 911 and changing the refractive index of the quaternary material layer 603, the wavelength that can pass can be finely adjusted. The input current is input to the third P-type contact metal layer 912, and the optical signals passing through the grating region 702 and the quaternary material layer 603 can be amplified by the active layer. Finally, the filtered optical signal exits the filter by the second low reflection layer 914.

Example 4

Please refer to FIG. 10 , which is a second type of adjustable wavelength receiver structure of the present invention. The manufacturing method and structure are as follows: a planar optical waveguide technique is used on a semiconductor substrate 1000 (eg, a twinned plate) to form a waveguide region, using micro-developing techniques and chemical etching, or using electron cyclotron resonance active ion etching. The method etches the substrate 1000 of the semiconductor to form a V-shaped groove, and adheres the first spherical lens 1010 and the second spherical lens 1011 to the V-shaped groove by using an adhesive, wherein the shape of the lens is not limited to only It is a spherical lens, and it can also be a lens of other shapes but capable of achieving the same function.

Next, the first metal conductive layer 1020 and the second metal conductive layer 1021 are formed in a specific region by using a micro-developing technique and a thin film technique, and the semiconductor filter 13 and the photodetector 14 having the grating are adhered to the first metal by using a conductive adhesive, respectively. The conductive layer 1020 and the second metal conductive layer 1021.

The external optical fiber 15 is fixed on the substrate 1000 by a fiber fixing portion 16 (refer to FIG. 10, the substrate 1001 is an extension of the substrate 1000), wherein the substrate can be a germanium substrate, and the fiber fixing portion 16 can be made of glass, and the optical fiber 15 The optical signal is introduced, and the optical signal is focused by the first spherical lens 1010 disposed on the side of the optical fiber fixing portion, and then injected into the semiconductor filter 13 having the grating disposed on the other side of the first spherical lens 1010.

The input current of the grating region of the semiconductor filter 13 with the grating can change the refractive index of the grating region to select the passable wavelength to achieve the filtering effect, and the filtered optical signal is focused and injected through the second spherical lens 1011. The photodetector 14 converts the optical signal into an electrical signal by the photodetector 14. The photodetector 14 may be a Positive-Intrinsic-Negative Photodiode (PIN Photodiode), an Avalanche Photodiode (APD), or a waveguide-type positive-negative-negative diode (PIN Photodiode). Adhesively composed on an aluminum nitride (AlN) substrate.

The wavelength-adjustable receiver provided by the present invention has the advantage of using a grating semiconductor structure filter to select a wavelength that can pass, which is fast in selecting a wavelength. The use of a grating semiconductor structure filter, the process is stable, can be manufactured in large quantities, and the manufacturing cost is reduced.

The detailed description of the preferred embodiments of the present invention is intended to be limited to the scope of the invention, and is not intended to limit the scope of the invention. The patent scope of this case.

Claims (10)

A wavelength-adjustable receiver includes: a substrate; a first waveguide region disposed on one side of the substrate, and one side of the first waveguide region receives an optical signal from an optical fiber and guides the signal An optical signal is connected to the other side of the first waveguide region; a grating semiconductor filter is disposed on the substrate side of the first waveguide region, and one end of the grating semiconductor filter faces the On the other side of the first waveguide region, the grating semiconductor filter comprises a quaternary material layer, wherein the quaternary material layer is a grating region and the rest is a non-grating region to select a wavelength that can pass through the optical signal. Outputting from the other end of the grating semiconductor filter; a second waveguide region is disposed on one side of the substrate, and one side of the second waveguide region is opposite to the other end of the semiconductor filter with the grating The optical signal selected by the grating semiconductor filter is on the other side of the second waveguide region; a photodetector is disposed on one side of the substrate, and one side of the photodetector is opposite to the second waveguide region On the other side, and convert the optical signal into a signal The receiver of the adjustable wavelength according to claim 1, wherein the photodetector is a positive-negative-negative photodiode (P-I-N). The receiver of the adjustable wavelength according to claim 1, wherein the photodetector is an avalanche photodiode. The receiver of the adjustable wavelength according to claim 1, wherein the photodetector is a waveguide type positive-negative-negative photodiode (P-I-N). A wavelength-adjustable receiver includes: a substrate; a first lens disposed on one side of the substrate, and one side of the first lens receives an optical signal from an optical fiber and directs the optical signal To the other side of the first lens; a semiconductor filter with a grating disposed on a side of the substrate on which the first lens is disposed, And one end of the grating semiconductor filter faces the other side of the first lens, and the grating semiconductor filter comprises a quaternary material layer, wherein the quaternary material layer is a grating region, and the rest is a non- a grating region for selecting a wavelength that can pass through the optical signal, and outputting the other end of the semiconductor filter with the grating; a second lens is disposed on one side of the substrate, and one side of the second lens is opposite to the grating The other end of the semiconductor filter, and guiding the optical signal selected by the semiconductor filter with the grating to the other side of the second lens; a photodetector is disposed on one side of the substrate, the photodetection One side of the device is on the other side of the second lens and converts the optical signal into an electrical signal. The receiver of the adjustable wavelength of claim 5, wherein the photodetector is a positive-negative-negative photodiode (P-I-N). The receiver of the wavelength adjustable according to claim 5, wherein the photodetector is an avalanche photodiode. The receiver of the adjustable wavelength according to claim 5, wherein the photodetector is a waveguide type positive-negative-negative photodiode (P-I-N). A semiconductor filter with a grating comprises: a substrate; an N-type cladding layer disposed on one side of the substrate; and a quaternary material layer disposed on the N-type cladding layer, the quaternary The material layer is a grating region, and the rest is a non-grating region; a P-type coating layer is disposed on the quaternary material layer, and the P-type coating layer has a ridge mesa shape. It is used as an optical waveguide to transmit signal light along a light path extending in a direction in which the P-type cladding layer extends; a first ohmic contact electrical layer is disposed on the P-type cladding layer and opposite to the grating a second ohmic contact layer disposed on the P-type cladding layer and opposite to the non-grating region; a patterned insulating layer covering the first ohmic contact layer, the second ohmic contact layer and the P-type cladding layer, and exposing a portion of the first ohmic contact layer and the second An ohmic contact layer; a first P-type contact metal layer disposed on the first ohmic contact layer not covered by the patterned insulating layer; and a second P-type contact metal layer disposed on the second ohmic contact layer a region of the second ohmic contact layer that is not covered by the patterned insulating layer; an N-type contact metal layer disposed on the other side of the substrate; and two low-reflection layers respectively disposed on the light path Vertically on either side of the P-type cladding layer. A semiconductor filter with a grating comprises: a substrate; an N-type cladding layer disposed on one side of the substrate; and a quaternary material layer disposed on the N-type cladding layer, the quaternary The material layer is a grating region, and the rest is a non-grating region; an active layer is disposed on the local quaternary material layer; a P-type cladding layer is disposed on the quaternary material layer and In the active layer, the P-type cladding layer has a ridge mesa shape, which is used as an optical waveguide, so that signal light propagates along the optical path extending in the direction of the P-type cladding layer; a first ohm a contact layer disposed on the P-type cladding layer and opposite to the grating region; a second ohmic contact layer disposed on the P-type cladding layer and not opposite to the grating a region and the active region; a third ohmic contact layer disposed on the P-type cladding layer and opposite to the active layer; a patterned insulating layer covering the first ohmic contact An electric layer, the second ohmic contact layer, the third ohmic contact layer, the P-type cladding layer, and an exposed portion The first European a contact layer, the second ohmic contact layer, the third ohmic contact layer; a first P-type contact metal layer disposed on the first ohmic contact layer without being covered by the patterned insulating layer a second P-type contact metal layer disposed on the second ohmic contact layer not covered by the patterned insulating layer; a third P-type contact metal layer disposed on the first a region of the three-ohm contact electrical layer that is not covered by the patterned insulating layer; an N-type contact metal layer disposed on the other side of the substrate; and two low-reflection layers respectively disposed perpendicular to the optical path The sides of the P-type cladding layer.