TWI627633B - Shift register - Google Patents
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- TWI627633B TWI627633B TW106125329A TW106125329A TWI627633B TW I627633 B TWI627633 B TW I627633B TW 106125329 A TW106125329 A TW 106125329A TW 106125329 A TW106125329 A TW 106125329A TW I627633 B TWI627633 B TW I627633B
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Abstract
一種移位暫存器包含多個移位暫存單元,每一移位暫存單元分別包含下拉電路、第一下拉控制電路與第二下拉控制電路。第一下拉控制電路包含第一接收端、第二接收端與第一輸出端。第一接收端用以接收第一低頻信號。第二下拉控制電路包含第三接收端、第四接收端與第二輸出端。第三接收端用以接收第二低頻信號。當第一低頻信號為高位準時,第二低頻信號為低位準。當第一低頻信號為低位準時,第一低頻信號為高位準。第一低頻信號與第二低頻信號週期性地於高位準與低位準間進行轉換。 A shift register includes a plurality of shift register units, and each shift register unit includes a pull-down circuit, a first pull-down control circuit and a second pull-down control circuit. The first pull-down control circuit includes a first receiving end, a second receiving end, and a first output end. The first receiving end is configured to receive the first low frequency signal. The second pull-down control circuit includes a third receiving end, a fourth receiving end, and a second output end. The third receiving end is configured to receive the second low frequency signal. When the first low frequency signal is at a high level, the second low frequency signal is at a low level. When the first low frequency signal is at a low level, the first low frequency signal is at a high level. The first low frequency signal and the second low frequency signal are periodically converted between a high level and a low level.
Description
本案是有關於一種移位暫存器,且特別是有關於可減輕偏壓應力(stress)的一種移位暫存器。 This case relates to a shift register and, in particular, to a shift register that reduces the bias stress.
功能先進的顯示器漸成為現今消費電子產品的重要特色,其中液晶顯示器已經逐漸成為各種電子設備如行動電話、個人數位助理(PDA)、數位相機、電腦螢幕或筆記型電腦螢幕所廣泛應用具有高解析度彩色螢幕的顯示器。 Advanced display has become an important feature of today's consumer electronics products. LCD monitors have become widely used in a variety of electronic devices such as mobile phones, personal digital assistants (PDAs), digital cameras, computer screens or notebook screens. Color screen display.
液晶顯示器包含閘極驅動器(gate driver)以及源極驅動器(source driver)。在目前的液晶顯示面板設計中,閘極驅動器等效上係為移位暫存器(shift register),用以每隔固定間隔輸出掃描訊號至液晶顯示面板。移位暫存器包含複數個移位暫存單元,而每一移位暫存單元依據時脈信號,將輸入訊號延遲輸出而為輸出訊號。而下一級的移位暫存單元則將上一級的移位暫存單元的輸出訊號做為輸入訊號,再延遲輸出成為自身的輸出訊號。然而,移位暫存單元之電晶體的閘極電壓會在延遲輸出之後仍長時間維持在高電壓,直到下一次掃描循環之前才會回復至低電壓準位,如此一來,會導致電晶體的臨界電壓發生偏移(shift)。此 外,當電晶體處於正偏壓或負偏壓時,偏壓時間越長對電晶體臨界電壓偏移程度影響也越大,這會影響電晶體的有效運作,連帶影響電晶體的使用壽命。最後甚至會導致移位暫存器的使用壽命縮短。 The liquid crystal display includes a gate driver and a source driver. In the current liquid crystal display panel design, the gate driver is equivalently a shift register for outputting the scan signal to the liquid crystal display panel at regular intervals. The shift register includes a plurality of shift register units, and each shift register unit delays the input signal as an output signal according to the clock signal. The shift register unit of the next stage uses the output signal of the shift register unit of the previous stage as the input signal, and delays the output to become its own output signal. However, the gate voltage of the transistor of the shift register unit will remain at a high voltage for a long time after the delay output, and will not return to the low voltage level until the next scan cycle, thus causing the transistor to be caused. The threshold voltage shifts. this In addition, when the transistor is in a positive or negative bias voltage, the longer the bias time, the greater the influence on the critical voltage offset of the transistor, which affects the effective operation of the transistor, which affects the service life of the transistor. In the end, it even leads to a shortened service life of the shift register.
因此,如何改善移位暫存器的電晶體的偏壓應力(stress),為本領域待改進的問題之一。 Therefore, how to improve the bias stress of the transistor of the shift register is one of the problems to be improved in the art.
本案之一態樣是在提供一種移位暫存器。此移位暫存器包含多個移位暫存單元,多個移位暫存單元彼此串聯,每一之多個移位暫存單元分別包含下拉電路、第一下拉控制電路與第二下拉控制電路。第一下拉控制電路與下拉電路電性耦接,且第一下拉控制電路包含第一接收端、第二接收端與第一輸出端。第一接收端用以接收第一低頻信號。第二接收端用以接收第一時脈信號。第一輸出端電性耦接於下拉電路。第二下拉控制電路與下拉電路電性耦接。第二下拉控制電路包含第三接收端、第四接收端與第二輸出端。第三接收端用以接收第二低頻信號。第四接收端用以接收第一時脈信號。第二輸出端電性耦接於第一輸出端。當第一低頻信號為高位準時,第二低頻信號為低位準。當第一低頻信號為低位準時,第二低頻信號為高位準。第一低頻信號與第二低頻信號週期性地於高位準與低位準間進行轉換。 One aspect of the case is to provide a shift register. The shift register includes a plurality of shift temporary storage units, and the plurality of shift temporary storage units are connected in series, and each of the plurality of shift temporary storage units respectively includes a pull-down circuit, a first pull-down control circuit and a second pull-down Control circuit. The first pull-down control circuit is electrically coupled to the pull-down circuit, and the first pull-down control circuit includes a first receiving end, a second receiving end, and a first output end. The first receiving end is configured to receive the first low frequency signal. The second receiving end is configured to receive the first clock signal. The first output is electrically coupled to the pull-down circuit. The second pull-down control circuit is electrically coupled to the pull-down circuit. The second pull-down control circuit includes a third receiving end, a fourth receiving end, and a second output end. The third receiving end is configured to receive the second low frequency signal. The fourth receiving end is configured to receive the first clock signal. The second output is electrically coupled to the first output. When the first low frequency signal is at a high level, the second low frequency signal is at a low level. When the first low frequency signal is at a low level, the second low frequency signal is at a high level. The first low frequency signal and the second low frequency signal are periodically converted between a high level and a low level.
本案之一態樣是在提供一種移位暫存器。此移位暫存器包含多個移位暫存單元,且多個移位暫存單元彼此 依序串接而形成多級之移位暫存單元。每一級之多個移位暫存單元分別接收第一時脈信號、第二時脈信號、第一低頻信號、第二低頻信號與低基準電位,並輸出閘極驅動信號與下拉驅動信號。而每一級之多個移位暫存單元更包含上拉電路、下拉電路、第一下拉控制電路與第二下拉控制電路。上拉電路具有第一輸出端與第二輸出端,且分別對應輸出閘極驅動信號與下拉驅動信號,而上拉電路係用以接收第二時脈信號。下拉電路電性耦接於上拉電路之第一輸出端與第二輸出端,且接收於低基準電位。第一下拉控制電路電性耦接於下拉電路,且接收第一低頻信號與第一時脈信號。第二下拉控制電路電性耦接於下拉電路,且接收第二低頻信號與第一時脈信號。第一低頻信號與第二低頻信號為互補電位,且第一低頻信號之週期與第二低頻信號之週期皆大於第一時脈信號之週期。 One aspect of the case is to provide a shift register. The shift register includes a plurality of shift register units, and the plurality of shift register units are mutually A plurality of shift register units are formed in series. The plurality of shift temporary storage units of each stage respectively receive the first clock signal, the second clock signal, the first low frequency signal, the second low frequency signal and the low reference potential, and output the gate driving signal and the pull-down driving signal. The plurality of shift register units of each stage further includes a pull-up circuit, a pull-down circuit, a first pull-down control circuit and a second pull-down control circuit. The pull-up circuit has a first output end and a second output end, and respectively corresponding to the output gate drive signal and the pull-down drive signal, and the pull-up circuit is configured to receive the second clock signal. The pull-down circuit is electrically coupled to the first output end and the second output end of the pull-up circuit, and is received at a low reference potential. The first pull-down control circuit is electrically coupled to the pull-down circuit and receives the first low frequency signal and the first clock signal. The second pull-down control circuit is electrically coupled to the pull-down circuit and receives the second low frequency signal and the first clock signal. The first low frequency signal and the second low frequency signal are complementary potentials, and the period of the first low frequency signal and the period of the second low frequency signal are both greater than the period of the first clock signal.
因此,根據本案之技術態樣,本案之實施例藉由提供一種移位暫存器,藉以有效改善移位暫存器的電晶體的偏壓應力的問題。 Therefore, according to the technical aspect of the present invention, the embodiment of the present invention effectively improves the bias stress of the transistor of the shift register by providing a shift register.
100‧‧‧移位暫存器 100‧‧‧Shift register
100_1~100_N‧‧‧移位暫存單元 100_1~100_N‧‧‧Shift register unit
200A、200B‧‧‧移位暫存單元 200A, 200B‧‧‧ shift register unit
210‧‧‧下拉電路 210‧‧‧ Pulldown circuit
220A、220B‧‧‧第一下拉控制電路 220A, 220B‧‧‧ first pull-down control circuit
230A、230B‧‧‧第二下拉控制電路 230A, 230B‧‧‧ second pull-down control circuit
240‧‧‧上拉電路 240‧‧‧ Pull-up circuit
250‧‧‧上拉控制電路 250‧‧‧ Pull-up control circuit
T1、T2、T7、T8、T9、T10‧‧‧電晶體 T1, T2, T7, T8, T9, T10‧‧‧ transistors
T3、T4、T5、T6、T11、T12‧‧‧電晶體 T3, T4, T5, T6, T11, T12‧‧‧ transistors
T13、T14、T15、T16、T17‧‧‧電晶體 T13, T14, T15, T16, T17‧‧‧ transistors
C1‧‧‧電容 C1‧‧‧ capacitor
R1、R2、R3、R4‧‧‧接收端 R1, R2, R3, R4‧‧‧ receiving end
O1、O2‧‧‧輸出端 O1, O2‧‧‧ output
VSS‧‧‧低基準電位 VSS‧‧‧low reference potential
ST(n)、ST(n-2)‧‧‧下拉驅動信號 ST(n), ST(n-2)‧‧‧ pulldown drive signal
G(n)、G(n-2)、G(n+4)‧‧‧閘極驅動信號 G(n), G(n-2), G(n+4)‧‧‧ gate drive signals
P(n)‧‧‧下拉信號 P(n)‧‧‧ pulldown signal
Q(n)‧‧‧上拉控制信號 Q(n)‧‧‧ Pull-up control signal
LC1、LC2‧‧‧低頻信號 LC1, LC2‧‧‧ low frequency signal
HC1、HC2‧‧‧時脈信號 HC1, HC2‧‧‧ clock signals
300‧‧‧信號波 300‧‧‧Signal wave
VGH‧‧‧高位準 VGH‧‧‧ high standard
VGL‧‧‧低位準 VGL‧‧‧ low level
為讓本發明之上述和其他目的、特徵、優點與實施例能更明顯易懂,所附圖式之說明如下:第1圖係根據本案之一些實施例所繪示之一種移位暫存器的示意圖;第2圖係根據本案之一些實施例所繪示之一種移位暫 存單元的示意圖;第3圖係根據本案之一些實施例所繪示之一種信號波的波形圖;以及第4圖係根據本案之一些實施例所繪示之另一種移位暫存單元的示意圖。 The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Schematic diagram of FIG. 2 is a shifting diagram according to some embodiments of the present disclosure. FIG. 3 is a waveform diagram of a signal wave according to some embodiments of the present invention; and FIG. 4 is a schematic diagram of another shift register unit according to some embodiments of the present disclosure. .
以下揭示提供許多不同實施例或例證用以實施本發明的不同特徵。特殊例證中的元件及配置在以下討論中被用來簡化本揭示。所討論的任何例證只用來作解說的用途,並不會以任何方式限制本發明或其例證之範圍和意義。此外,本揭示在不同例證中可能重複引用數字符號且/或字母,這些重複皆為了簡化及闡述,其本身並未指定以下討論中不同實施例且/或配置之間的關係。 The following disclosure provides many different embodiments or illustrations for implementing different features of the invention. The elements and configurations of the specific illustrations are used in the following discussion to simplify the disclosure. Any examples discussed are for illustrative purposes only and are not intended to limit the scope and meaning of the invention or its examples. In addition, the present disclosure may repeatedly recite numerical symbols and/or letters in different examples, which are for simplicity and elaboration, and do not specify the relationship between the various embodiments and/or configurations in the following discussion.
在全篇說明書與申請專利範圍所使用之用詞(terms),除有特別註明外,通常具有每個用詞使用在此領域中、在此揭露之內容中與特殊內容中的平常意義。某些用以描述本揭露之用詞將於下或在此說明書的別處討論,以提供本領域技術人員在有關本揭露之描述上額外的引導。 The terms used in the entire specification and the scope of the patent application, unless otherwise specified, generally have the ordinary meaning of each term used in the field, the content disclosed herein, and the particular content. Certain terms used to describe the disclosure are discussed below or elsewhere in this specification to provide additional guidance to those skilled in the art in the description of the disclosure.
關於本文中所使用之『耦接』或『連接』,均可指二或多個元件相互直接作實體或電性接觸,或是相互間接作實體或電性接觸,而『耦接』或『連接』還可指二或多個元件相互操作或動作。 "Coupling" or "connecting" as used herein may mean that two or more elements are in direct physical or electrical contact with each other, or indirectly in physical or electrical contact with each other, and "coupled" or " Connections may also mean that two or more elements operate or interact with each other.
在本文中,使用第一、第二與第三等等之詞彙, 是用於描述各種元件、組件、區域、層與/或區塊是可以被理解的。但是這些元件、組件、區域、層與/或區塊不應該被這些術語所限制。這些詞彙只限於用來辨別單一元件、組件、區域、層與/或區塊。因此,在下文中的一第一元件、組件、區域、層與/或區塊也可被稱為第二元件、組件、區域、層與/或區塊,而不脫離本發明的本意。如本文所用,詞彙『與/或』包含了列出的關聯項目中的一個或多個的任何組合。本案文件中提到的「及/或」是指表列元件的任一者、全部或至少一者的任意組合。 In this article, use the words first, second, third, etc. It is to be understood that various elements, components, regions, layers and/or blocks are described. However, these elements, components, regions, layers and/or blocks should not be limited by these terms. These terms are only used to identify a single element, component, region, layer, and/or block. Thus, a singular element, component, region, layer and/or block may be referred to as a second element, component, region, layer and/or block, without departing from the spirit of the invention. As used herein, the term "and/or" encompasses any combination of one or more of the listed associated items. "and/or" as used in this document refers to any combination of any, all or at least one of the listed elements.
請參閱第1圖。第1圖係根據本案之一些實施例所繪示之一種移位暫存器100的示意圖。如第1圖所繪示,移位暫存器100包含多個移位暫存單元100_1~100_N,多個移位暫存單元100_1~100_N彼此串聯。每一移位暫存單元100_1~100_N可分別輸出閘極驅動信號G(1)~G(N)與下拉驅動信號ST(1)~ST(N)。關於移位暫存單元100_1~100_N的詳細實施方式,將於以下配合第1圖~第3圖說明。 Please refer to Figure 1. FIG. 1 is a schematic diagram of a shift register 100 according to some embodiments of the present disclosure. As shown in FIG. 1 , the shift register 100 includes a plurality of shift register units 100_1 100 100_N, and the plurality of shift register units 100_1 100 100_N are connected in series. Each of the shift register units 100_1 100 100_N can output gate drive signals G(1) to G(N) and pull-down drive signals ST(1) to ST(N), respectively. The detailed embodiments of the shift register units 100_1 to 100_N will be described below with reference to FIGS. 1 to 3 .
請參閱第2圖。第2圖係根據本案之一些實施例所繪示之一種移位暫存單元200A的示意圖。移位暫存單元200A可用以表示第1圖中之移位暫存單元100_1~100_N的其中任一者。如第2圖所繪示,移位暫存單元200A包含下拉電路210、第一下拉控制電路220A、第二下拉控制電路230A。第一下拉控制電路220A與下拉電路210電性耦接,且第一下拉控制電路220A包含接收端R1、接收端R2以及輸出端O1。接收端R1用以接收第一低頻信號LC1,接收端 R2用以接收時脈信號HC2,輸出端O1電性耦接下拉電路210。第二下拉控制電路230A與下拉電路210電性耦接,且第二下拉控制電路230A包含接收端R3、接收端R4以及輸出端O2。接收端R3用以接收第二低頻信號LC2,接收端R4用以接收時脈信號HC2,輸出端O2電性耦接輸出端O1與下拉電路210。 Please refer to Figure 2. FIG. 2 is a schematic diagram of a shift register unit 200A according to some embodiments of the present disclosure. The shift register unit 200A can be used to indicate any one of the shift register units 100_1 100 100_N in FIG. 1 . As shown in FIG. 2, the shift register unit 200A includes a pull-down circuit 210, a first pull-down control circuit 220A, and a second pull-down control circuit 230A. The first pull-down control circuit 220A is electrically coupled to the pull-down circuit 210, and the first pull-down control circuit 220A includes a receiving end R1, a receiving end R2, and an output end O1. The receiving end R1 is configured to receive the first low frequency signal LC1, and the receiving end R2 is used to receive the clock signal HC2, and the output terminal O1 is electrically coupled to the pull-down circuit 210. The second pull-down control circuit 230A is electrically coupled to the pull-down circuit 210, and the second pull-down control circuit 230A includes a receiving end R3, a receiving end R4, and an output end O2. The receiving end R3 is configured to receive the second low frequency signal LC2, the receiving end R4 is configured to receive the clock signal HC2, and the output end O2 is electrically coupled to the output end O1 and the pull-down circuit 210.
請參閱第3圖。第3圖係根據本案之一些實施例所繪示之一種信號波300的波形圖。如第3圖所繪示,第一低頻信號LC1與第二低頻信號LC2互補。也就是說,當第一低頻信號LC1為高位準VGH時,第二低頻信號LC2為低位準VGL,而當第一低頻信號LC1為低位準VGL時,第二低頻信號LC2為高位準VGH。在一些實施例中,第一低頻信號LC1與第二低頻信號LC2的週期大於時脈信號HC1與時脈信號HC2的週期。在一些實施例中,第一低頻信號LC1與第二低頻信號LC2的週期約為1~3秒。在一些實施例中,第一低頻信號LC1與第二低頻信號LC2的週期約為1~5秒。在一些實施例中,時脈信號HC1與時脈信號HC2的週期約為10~200微秒,但本案不以此為限。 Please refer to Figure 3. FIG. 3 is a waveform diagram of a signal wave 300 according to some embodiments of the present disclosure. As shown in FIG. 3, the first low frequency signal LC1 is complementary to the second low frequency signal LC2. That is, when the first low frequency signal LC1 is at the high level VGH, the second low frequency signal LC2 is the low level VGL, and when the first low frequency signal LC1 is at the low level VGL, the second low frequency signal LC2 is at the high level VGH. In some embodiments, the period of the first low frequency signal LC1 and the second low frequency signal LC2 is greater than the period of the clock signal HC1 and the clock signal HC2. In some embodiments, the period of the first low frequency signal LC1 and the second low frequency signal LC2 is about 1 to 3 seconds. In some embodiments, the period of the first low frequency signal LC1 and the second low frequency signal LC2 is about 1 to 5 seconds. In some embodiments, the period of the clock signal HC1 and the clock signal HC2 is about 10 to 200 microseconds, but the present invention is not limited thereto.
請回頭參閱第2圖。如第2圖所繪示,在一些實施例中,第一下拉控制電路220A包含電晶體T1,而第二下拉控制電路230A包含電晶體T2。電晶體T1包含第一端、第二端以及控制端,且電晶體T1的第一端用以接收時脈信號HC2,電晶體T1的第二端用以輸出下拉信號P(n),電晶體T1的控制端用以接收第一低頻信號LC1。電晶體T2包含第 一端、第二端以及控制端。其中,電晶體T2的第一端用以接收時脈信號HC2,電晶體T2的第二端用以輸出下拉信號P(n),電晶體T2的控制端用以接收第二低頻信號LC2。 Please refer back to Figure 2. As depicted in FIG. 2, in some embodiments, the first pull-down control circuit 220A includes a transistor T1 and the second pull-down control circuit 230A includes a transistor T2. The transistor T1 includes a first end, a second end, and a control end, and the first end of the transistor T1 is for receiving the clock signal HC2, and the second end of the transistor T1 is for outputting the pull-down signal P(n), the transistor The control end of T1 is for receiving the first low frequency signal LC1. Transistor T2 contains the first One end, the second end, and the control end. The first end of the transistor T2 is used to receive the clock signal HC2, the second end of the transistor T2 is used to output the pull-down signal P(n), and the control end of the transistor T2 is used to receive the second low-frequency signal LC2.
請一併參閱第2圖與第3圖。以電晶體T1來看,當第一低頻信號LC1為高位準VGH,即其控制端為高位準VGH時,電晶體T1為導通狀態,使得第二端實質上為時脈信號HC2。同時,在第一低頻信號LC1為高位準VGH的期間時,時脈信號HC2則為多個周期性之高位準VGH與低位準VGL切換。在此情況,隨著時脈信號HC2的週期性電壓切換,電晶體T1之控制端與第二端的電壓差會呈現大於零電位與實質上為零電位的周期變化。如此一來,電晶體T1之應力表現則會呈現正偏壓。同樣地,當第一低頻信號LC1為低位準VGL,即其控制端為低位準VGL時,電晶體T1實質上為非導通狀態,而其第二端實質上為時脈信號HC2。在此情況下,隨著時脈信號HC2的週期性電壓切換,電晶體T1之控制端與第二端的電壓差會呈現小於零電位與實質上為零電位的周期變化。如此一來,電晶體T1之應力表現則會呈現負偏壓。結合上述說明來看,當第一低頻信號LC1為高位準VGH時,第一下拉控制電路220A進行作動,使得電晶體T1為正偏壓的應力表現;而當第一低頻信號LC1為低位準VGL時,第一下拉控制電路220A則不作動,使得電晶體T1為負偏壓的應力表現。因此,電晶體T1之應力可以處於正偏壓與負偏壓的交替情況,使得應力能夠互相抵銷,進而減少電晶體的臨界電壓發生偏移。 Please refer to Figure 2 and Figure 3 together. As seen from the transistor T1, when the first low frequency signal LC1 is at a high level VGH, that is, its control terminal is at a high level VGH, the transistor T1 is in an on state, such that the second terminal is substantially the clock signal HC2. At the same time, when the first low frequency signal LC1 is in the high level VGH, the clock signal HC2 is switched between the plurality of periodic high level VGH and the low level VGL. In this case, as the periodic voltage of the clock signal HC2 switches, the voltage difference between the control terminal and the second terminal of the transistor T1 exhibits a periodic variation greater than zero potential and substantially zero potential. As a result, the stress behavior of the transistor T1 will exhibit a positive bias. Similarly, when the first low frequency signal LC1 is at a low level VGL, that is, its control terminal is a low level VGL, the transistor T1 is substantially in a non-conducting state, and its second end is substantially a clock signal HC2. In this case, as the periodic voltage of the clock signal HC2 switches, the voltage difference between the control terminal and the second terminal of the transistor T1 exhibits a periodic variation of less than zero potential and substantially zero potential. As a result, the stress behavior of the transistor T1 exhibits a negative bias. In combination with the above description, when the first low frequency signal LC1 is at the high level VGH, the first pull-down control circuit 220A operates to make the transistor T1 be a positively biased stress representation; and when the first low frequency signal LC1 is at a low level In the case of VGL, the first pull-down control circuit 220A is not activated, so that the transistor T1 exhibits a stress of a negative bias. Therefore, the stress of the transistor T1 can be alternated between a positive bias and a negative bias, so that the stresses can cancel each other, thereby reducing the deflection of the threshold voltage of the transistor.
以電晶體T2來看,當第二低頻信號LC2為高位準VGH,即其控制端為高位準VGH時,電晶體T2為導通狀態,使得第二端實質上為時脈信號HC2。同時,在第二低頻信號LC2為高位準VGH的期間時,時脈信號HC2則為多個周期性之高位準VGH與低位準VGL切換。在此情況,隨著時脈信號HC2的週期性電壓切換,電晶體T2之控制端與第二端的電壓差會呈現大於零電位與實質上為零電位的周期變化。如此一來,電晶體T2之應力表現則會呈現正偏壓。同樣地,當第二低頻信號LC2為低位準VGL,即其控制端為低位準VGL時,電晶體T2實質上為非導通狀態,而其第二端實質上為時脈信號HC2。在此情況下,隨著時脈信號HC2的週期性電壓切換,電晶體T2之控制端與第二端的電壓差會呈現小於零電位與實質上為零電位的周期變化。如此一來,電晶體T2之應力表現則會呈現負偏壓。結合上述說明來看,當第二低頻信號LC2為高位準VGH時,第二下拉控制電路230A進行作動,使得電晶體T2為正偏壓的應力表現;而當第二低頻信號LC2為低位準VGL時,第二下拉控制電路230A則不作動,使得電晶體T2為負偏壓的應力表現。因此,電晶體T2之應力可以處於正偏壓與負偏壓的交替情況,使得應力能夠互相抵銷,進而減少電晶體的臨界電壓發生偏移。 As seen from the transistor T2, when the second low frequency signal LC2 is at a high level VGH, that is, its control terminal is at a high level VGH, the transistor T2 is in an on state, such that the second terminal is substantially the clock signal HC2. At the same time, when the second low frequency signal LC2 is in the high level VGH, the clock signal HC2 is switched between the plurality of periodic high level VGH and the low level VGL. In this case, as the periodic voltage of the clock signal HC2 switches, the voltage difference between the control terminal and the second terminal of the transistor T2 exhibits a periodic variation greater than zero potential and substantially zero potential. As a result, the stress behavior of the transistor T2 will exhibit a positive bias. Similarly, when the second low frequency signal LC2 is at a low level VGL, that is, its control terminal is a low level VGL, the transistor T2 is substantially in a non-conducting state, and its second end is substantially a clock signal HC2. In this case, as the periodic voltage of the clock signal HC2 switches, the voltage difference between the control terminal and the second terminal of the transistor T2 exhibits a periodic variation of less than zero potential and substantially zero potential. As a result, the stress behavior of the transistor T2 exhibits a negative bias. Referring to the above description, when the second low frequency signal LC2 is at the high level VGH, the second pull-down control circuit 230A operates to make the transistor T2 be a positive bias stress expression; and when the second low frequency signal LC2 is a low level VGL At this time, the second pull-down control circuit 230A is not actuated, so that the transistor T2 exhibits a stress of a negative bias. Therefore, the stress of the transistor T2 can be alternated between a positive bias and a negative bias, so that the stresses can cancel each other, thereby reducing the deflection of the threshold voltage of the transistor.
請回頭參閱第2圖。在一些實施例中,移位暫存單元200A更進一步包含上拉電路240、上拉控制電路250與下拉電路210。下拉電路210電性耦接於第一下拉控制電 路220A與第二下拉控制電路230A。上拉電路240電性耦接於上拉控制電路250與下拉電路210。上拉控制電路250電性耦接於上拉電路240與下拉電路210。 Please refer back to Figure 2. In some embodiments, the shift register unit 200A further includes a pull-up circuit 240, a pull-up control circuit 250, and a pull-down circuit 210. The pull-down circuit 210 is electrically coupled to the first pull-down control The path 220A is connected to the second pull-down control circuit 230A. The pull-up circuit 240 is electrically coupled to the pull-up control circuit 250 and the pull-down circuit 210. The pull-up control circuit 250 is electrically coupled to the pull-up circuit 240 and the pull-down circuit 210.
上拉電路240接收時脈信號HC1,並於不同輸出端分別輸出閘極輸出信號G(n)與下拉驅動信號ST(n)。上拉控制電路250接收前兩級的閘極驅動信號G(n-2)與前兩級的下拉驅動信號ST(n-2)並輸出上拉控制信號Q(n)。 The pull-up circuit 240 receives the clock signal HC1 and outputs a gate output signal G(n) and a pull-down drive signal ST(n) at different output terminals. The pull-up control circuit 250 receives the first two stages of the gate drive signal G(n-2) and the first two stages of the pull-down drive signal ST(n-2) and outputs the pull-up control signal Q(n).
在一些實施例中,上拉控制電路250包含電晶體T13。其中,電晶體T13的第一端用以接收前兩級的閘極驅動信號G(n-2),而電晶體T13的第二端用以輸出上拉控制信號Q(n),電晶體T13的控制端則用以接收前兩級的下拉驅動信號ST(n-2)。 In some embodiments, the pull up control circuit 250 includes a transistor T13. The first end of the transistor T13 is for receiving the first two stages of the gate driving signal G(n-2), and the second end of the transistor T13 is for outputting the pull-up control signal Q(n), the transistor T13 The control terminal is configured to receive the pull-down drive signals ST(n-2) of the first two stages.
在一些實施例中,上拉電路240包含電容C1、電晶體T14以及電晶體T15。電晶體T14的第一端與電晶體T15的第一端分別接收時脈信號HC1。電晶體T15的第二端輸出閘極驅動信號G(n),而電晶體T14之第二端則輸出下拉驅動信號ST(n)。電容C1的第一端分別耦接於電晶體T14的控制端以及電晶體T15的控制端,其第二端則耦接電晶體T15之第二端。 In some embodiments, the pull up circuit 240 includes a capacitor C1, a transistor T14, and a transistor T15. The first end of the transistor T14 and the first end of the transistor T15 receive the clock signal HC1, respectively. The second end of the transistor T15 outputs a gate drive signal G(n), and the second end of the transistor T14 outputs a pull-down drive signal ST(n). The first end of the capacitor C1 is coupled to the control end of the transistor T14 and the control end of the transistor T15, and the second end is coupled to the second end of the transistor T15.
在一些實施例中,下拉電路210包含電晶體T7、電晶體T8、電晶體T9與電晶體T10。電晶體T8的控制端、電晶體T9的控制端、電晶體T10的控制端分別與第一下拉控制電路220A與第二下拉控制電路220B電性耦接。具體而言,第一下拉控制電路220A與第二下拉控制電路220B 可輸出下拉信號P(n),進而使下拉電路210可接收此下拉信號P(n)。電晶體T9的第二端以及電晶體T10的第二端彼此電性耦接,舉例而言,電晶體T9之第二端與電晶體T10之第二端可分別用以接收低基準電位VSS。電晶體T9的第一端與電晶體T10的第一端分別與上拉電路240電性耦接。電晶體T8的第二端分別與上拉控制電路250以及上拉電路240電性耦接。詳之言,電晶體T9之第一端用以接收下拉驅動信號ST(n),電晶體T10的第一端耦接於閘極驅動信號G(n),電晶體T8的第一端用以接收上拉控制信號Q(n)。 In some embodiments, the pull-down circuit 210 includes a transistor T7, a transistor T8, a transistor T9, and a transistor T10. The control terminal of the transistor T8, the control terminal of the transistor T9, and the control terminal of the transistor T10 are electrically coupled to the first pull-down control circuit 220A and the second pull-down control circuit 220B, respectively. Specifically, the first pull-down control circuit 220A and the second pull-down control circuit 220B The pull-down signal P(n) can be output, thereby enabling the pull-down circuit 210 to receive the pull-down signal P(n). The second end of the transistor T9 and the second end of the transistor T10 are electrically coupled to each other. For example, the second end of the transistor T9 and the second end of the transistor T10 can respectively receive the low reference potential VSS. The first end of the transistor T9 and the first end of the transistor T10 are electrically coupled to the pull-up circuit 240, respectively. The second ends of the transistors T8 are electrically coupled to the pull-up control circuit 250 and the pull-up circuit 240, respectively. In detail, the first end of the transistor T9 is configured to receive the pull-down driving signal ST(n), and the first end of the transistor T10 is coupled to the gate driving signal G(n), and the first end of the transistor T8 is used to The pull-up control signal Q(n) is received.
在一些實施例中,下拉電路210之電晶體T7的控制端用以接收上拉控制信號Q(n),電晶體T7的第一端用以接收下拉信號P(n),電晶體T7的第二端用以接收低基準電位VSS。上述上拉控制信號Q(n)是由上拉控制電路250所輸出,而下拉信號P(n)是由第一下拉控制電路220A與第二下拉控制電路220B所輸出。 In some embodiments, the control terminal of the transistor T7 of the pull-down circuit 210 is configured to receive the pull-up control signal Q(n), and the first end of the transistor T7 is configured to receive the pull-down signal P(n), the first of the transistor T7 The two terminals are used to receive the low reference potential VSS. The pull-up control signal Q(n) is output by the pull-up control circuit 250, and the pull-down signal P(n) is output by the first pull-down control circuit 220A and the second pull-down control circuit 220B.
請再參閱第2圖。在一些實施例中,移位暫存單元200A更進一步包含電晶體T16與電晶體T17。電晶體T16的控制端用以接收下拉驅動信號ST(n),電晶體T16的第一端耦接於上拉控制電路250或用以接收上拉控制信號Q(n),電晶體T16的第二端用以接收低基準電位VSS。電晶體T17的控制端用以接收後四級的閘極驅動信號G(n+4),電晶體T17的第一端耦接於上拉電路240,電晶體T16的第二端用以接收低基準電位VSS。 Please refer to Figure 2 again. In some embodiments, the shift register unit 200A further includes a transistor T16 and a transistor T17. The control terminal of the transistor T16 is configured to receive the pull-down driving signal ST(n), the first end of the transistor T16 is coupled to the pull-up control circuit 250 or the receiving pull-up control signal Q(n), the transistor T16 The two terminals are used to receive the low reference potential VSS. The control terminal of the transistor T17 is configured to receive the gate drive signal G(n+4) of the last four stages, the first end of the transistor T17 is coupled to the pull-up circuit 240, and the second end of the transistor T16 is configured to receive the low Reference potential VSS.
請參閱第4圖。第4圖係根據本案之一些實施例 所繪示之另一種移位暫存單元200B的示意圖。移位暫存單元200B可用以表示第1圖中之移位暫存單元100_1~100_N的其中任一者。如第4圖所繪示,移位暫存單元200B包含下拉電路210、第一下拉控制電路220B、第二下拉控制電路230B、上拉電路240以及上拉控制電路250。第4圖中之移位暫存單元200B的下拉電路210、上拉電路240、上拉控制電路250與第2圖中的移位暫存單元200A的下拉電路210、上拉電路240、上拉控制電路250的結構相同。在此不再重複敘述。 Please refer to Figure 4. Figure 4 is a view of some embodiments according to the present invention Another schematic diagram of the shift register unit 200B is shown. The shift register unit 200B can be used to indicate any one of the shift register units 100_1 100 100_N in FIG. 1 . As shown in FIG. 4, the shift register unit 200B includes a pull-down circuit 210, a first pull-down control circuit 220B, a second pull-down control circuit 230B, a pull-up circuit 240, and a pull-up control circuit 250. The pull-down circuit 210, the pull-up circuit 240, the pull-up control circuit 250 of the shift register unit 200B in FIG. 4 and the pull-down circuit 210, the pull-up circuit 240, and the pull-up of the shift register unit 200A in FIG. The structure of the control circuit 250 is the same. The description will not be repeated here.
請參閱第4圖。在一些實施例中,第一下拉控制電路220B包含電晶體T3與電晶體T4。電晶體T3的控制端與其第二端接收第一低頻信號LC1。電晶體T4的第一端接收時脈信號HC2,電晶體T4的第二端輸出下拉信號P(n)。電晶體T3的第一端電性耦接至電晶體T4的控制端。在一些實施例中,第二下拉控制電路230B包含電晶體T5與電晶體T6。電晶體T5的控制端與其第一端接收第二低頻信號LC2。電晶體T6的第二端接收時脈信號HC2,電晶體T6的第一端輸出下拉信號P(n)。電晶體T5的第二端電性耦接至電晶體T6的控制端。 Please refer to Figure 4. In some embodiments, the first pull-down control circuit 220B includes a transistor T3 and a transistor T4. The control terminal of the transistor T3 and the second terminal thereof receive the first low frequency signal LC1. The first end of the transistor T4 receives the clock signal HC2, and the second end of the transistor T4 outputs the pull-down signal P(n). The first end of the transistor T3 is electrically coupled to the control end of the transistor T4. In some embodiments, the second pull-down control circuit 230B includes a transistor T5 and a transistor T6. The control terminal of the transistor T5 receives the second low frequency signal LC2 from its first end. The second end of the transistor T6 receives the clock signal HC2, and the first end of the transistor T6 outputs a pull-down signal P(n). The second end of the transistor T5 is electrically coupled to the control end of the transistor T6.
在一些實施例中,第一下拉控制電路220B還包含電晶體T11,第二下拉控制電路230B還包含電晶體T12。詳言之,電晶體T11的第一端與電晶體T12的第二端可分別接收低基準電位VSS,使得電晶體T11之第一端與電晶體T12之第二端相互電性耦接。電晶體T11的第二端電性耦接 於電晶體T4的控制端與電晶體T3的第一端。電晶體T12的第一端電性耦接於電晶體T6的控制端與電晶體T5的第二端。電晶體T11的控制端與電晶體T12的控制端可分別接收上拉控制信號Q(n)。 In some embodiments, the first pull-down control circuit 220B further includes a transistor T11, and the second pull-down control circuit 230B further includes a transistor T12. In detail, the first end of the transistor T11 and the second end of the transistor T12 can respectively receive the low reference potential VSS, so that the first end of the transistor T11 and the second end of the transistor T12 are electrically coupled to each other. The second end of the transistor T11 is electrically coupled At the control end of the transistor T4 and the first end of the transistor T3. The first end of the transistor T12 is electrically coupled to the control end of the transistor T6 and the second end of the transistor T5. The control terminal of the transistor T11 and the control terminal of the transistor T12 can receive the pull-up control signal Q(n), respectively.
請一併參閱第3圖與第4圖。以電晶體T4來說,當第一低頻信號LC1為高位準VGH,即電晶體T3的控制端為高位準VGH時,電晶體T3為導通狀態,使得電晶體T4的控制端為高位準VGH。如此一來,電晶體T4為導通狀態,且電晶體T4的第二端實質上為時脈信號HC2。同時,在第一低頻信號LC1為高位準VGH的期間時,時脈訊號HC2則為多個周期性之高位準VGH與底位準VGL切換。在此情況,隨著時脈信號HC2的週期性電壓切換,電晶體T4之控制端與第二端的電壓差會呈現大於零電位與實質上為零電位的周期變化。如此一來,電晶體T4之應力表現則會呈現正偏壓。同樣地,當第一低頻信號LC1為低位準VGL,即其控制端為低位準VGL時,電晶體T3實質上為非導通狀態,使得電晶體T4的控制端為低位準VGL。如此一來,電晶體T4為非導通狀態,而電晶體T4的第二端實質上為時脈信號HC2。在此情況下,隨著時脈信號HC2的週期性電壓切換,電晶體T4之控制端與第二端的電壓差會呈現小於零電位與實質上為零電位的周期變化,進而使得電晶體T4之應力表現則會呈現負偏壓。結合上述說明來看,當第一低頻信號LC1為高位準VGH時,第一下拉控制電路220B進行作動,使得電晶體T4為正偏壓的應力表現;而當第一低頻信 號LC1為低位準VGL時,第一下拉控制電路220B則不作動,使得電晶體T4為負偏壓的應力表現。因此,電晶體T4之應力可以處於正偏壓與負偏壓的交替情況,使得應力能夠互相抵銷,進而減少電晶體的臨界電壓發生偏移。 Please refer to Figure 3 and Figure 4 together. In the case of the transistor T4, when the first low frequency signal LC1 is at the high level VGH, that is, the control terminal of the transistor T3 is at the high level VGH, the transistor T3 is in an on state, so that the control terminal of the transistor T4 is at the high level VGH. In this way, the transistor T4 is in an on state, and the second end of the transistor T4 is substantially the clock signal HC2. At the same time, when the first low frequency signal LC1 is in the high level VGH, the clock signal HC2 is switched between the plurality of periodic high level VGH and the bottom level VGL. In this case, as the periodic voltage of the clock signal HC2 switches, the voltage difference between the control terminal and the second terminal of the transistor T4 exhibits a periodic variation greater than zero potential and substantially zero potential. As a result, the stress behavior of the transistor T4 will exhibit a positive bias. Similarly, when the first low frequency signal LC1 is at a low level VGL, that is, its control terminal is a low level VGL, the transistor T3 is substantially non-conductive, such that the control terminal of the transistor T4 is at a low level VGL. As a result, the transistor T4 is in a non-conducting state, and the second end of the transistor T4 is substantially a clock signal HC2. In this case, with the periodic voltage switching of the clock signal HC2, the voltage difference between the control terminal and the second terminal of the transistor T4 exhibits a periodic variation of less than zero potential and substantially zero potential, thereby causing the transistor T4 to The stress performance will exhibit a negative bias. Referring to the above description, when the first low frequency signal LC1 is at the high level VGH, the first pull-down control circuit 220B operates to make the transistor T4 be a positively biased stress representation; and when the first low frequency signal When the number LC1 is a low level VGL, the first pull-down control circuit 220B is not activated, so that the transistor T4 is a negative bias stress. Therefore, the stress of the transistor T4 can be alternated between a positive bias and a negative bias, so that the stresses can cancel each other, thereby reducing the deflection of the threshold voltage of the transistor.
以電晶體T6來說,當第二低頻信號LC2為高位準VGH,即電晶體T5的控制端為高位準VGH時,電晶體T5為導通狀態,使得電晶體T6的控制端為高位準VGH。如此一來,電晶體T6為導通狀態,且電晶體T6的第二端實質上為時脈信號HC2。同時,在第二低頻信號LC2為高位準VGH的期間時,時脈信號HC2則為多個周期性之高位準VGH與底位準VGL切換。在此情況,隨著時脈信號HC2的週期性電壓切換,電晶體T6之控制端與第二端的電壓差會呈現大於零電位與實質上為零電位的周期變化。因此,電晶體T6之應力表現則會呈現正偏壓。同樣地,當第二低頻信號LC2為低位準VGL,即其控制端為低位準VGL時,電晶體T5實質上為非導通狀態,使得電晶體T6的控制端為低位準VGL。如此一來,電晶體T6為非導通狀態,且電晶體T6的第二端實質上為時脈信號HC2。在此情況下,隨著時脈信號HC2的週期性電壓切換,電晶體T6之控制端與第二端的電壓差會呈現小於零電位與實質上為零電位的周期變化。因此,電晶體T6之應力表現則會呈現負偏壓。結合上述說明來看,當第一低頻信號LC1為高位準VGH時,第一下拉控制電路220B進行作動,使得電晶體T6為正偏壓的應力表現;而當第一低頻信號LC1為低位準VGL時,第一下拉控 制電路220B則不作動,使得電晶體T6為負偏壓的應力表現。因此,電晶體T6之應力可以處於正偏壓與負偏壓的交替情況,使得應力能夠互相抵銷,進而減少電晶體的臨界電壓發生偏移。 In the case of the transistor T6, when the second low frequency signal LC2 is at the high level VGH, that is, the control terminal of the transistor T5 is at the high level VGH, the transistor T5 is in an on state, so that the control terminal of the transistor T6 is at the high level VGH. In this way, the transistor T6 is in an on state, and the second end of the transistor T6 is substantially the clock signal HC2. At the same time, when the second low frequency signal LC2 is in the high level VGH, the clock signal HC2 is switched between the plurality of periodic high level VGH and the bottom level VGL. In this case, as the periodic voltage of the clock signal HC2 switches, the voltage difference between the control terminal and the second terminal of the transistor T6 exhibits a periodic variation greater than zero potential and substantially zero potential. Therefore, the stress behavior of the transistor T6 will exhibit a positive bias. Similarly, when the second low frequency signal LC2 is at a low level VGL, that is, its control terminal is a low level VGL, the transistor T5 is substantially non-conductive, such that the control terminal of the transistor T6 is at a low level VGL. As a result, the transistor T6 is in a non-conducting state, and the second end of the transistor T6 is substantially the clock signal HC2. In this case, as the periodic voltage of the clock signal HC2 switches, the voltage difference between the control terminal and the second terminal of the transistor T6 exhibits a periodic variation of less than zero potential and substantially zero potential. Therefore, the stress behavior of the transistor T6 exhibits a negative bias. Referring to the above description, when the first low frequency signal LC1 is at the high level VGH, the first pull-down control circuit 220B operates to make the transistor T6 be a positive bias stress expression; and when the first low frequency signal LC1 is at a low level VGL, the first pull down control The circuit 220B is not actuated such that the transistor T6 exhibits a stress with a negative bias. Therefore, the stress of the transistor T6 can be alternated between a positive bias and a negative bias, so that the stresses can cancel each other, thereby reducing the deflection of the threshold voltage of the transistor.
如上所述,於本案之移位暫存器200A與200B中,透過第一低頻信號LC1、第二低頻信號LC2與時脈信號HC2使移位暫存器的下拉控制電路中的電晶體達到正偏壓與負偏壓的交替情況,使得應力能夠互相抵銷,進而減少電晶體的臨界電壓發生偏移。 As described above, in the shift registers 200A and 200B of the present embodiment, the transistors in the pull-down control circuit of the shift register are made positive through the first low-frequency signal LC1, the second low-frequency signal LC2, and the clock signal HC2. The alternation of the bias voltage and the negative bias voltage allows the stresses to cancel each other, thereby reducing the deflection of the threshold voltage of the transistor.
由上述本案之實施方式可知,本案之實施例藉由提供一種移位暫存器,藉以有效改善改善移位暫存器的電晶體的偏壓應力的問題。 It can be seen from the above embodiments of the present invention that the embodiment of the present invention effectively improves the problem of improving the bias stress of the transistor of the shift register by providing a shift register.
另外,上述例示包含依序的示範步驟,但該些步驟不必依所顯示的順序被執行。以不同順序執行該些步驟皆在本揭示內容的考量範圍內。在本揭示內容之實施例的精神與範圍內,可視情況增加、取代、變更順序及/或省略該些步驟。 In addition, the above examples include exemplary steps in sequence, but the steps are not necessarily performed in the order shown. Performing these steps in a different order is within the scope of the present disclosure. Such steps may be added, substituted, altered, and/or omitted as appropriate within the spirit and scope of the embodiments of the present disclosure.
雖然本案已以實施方式揭示如上,然其並非用以限定本案,任何熟習此技藝者,在不脫離本案之精神和範圍內,當可作各種之更動與潤飾,因此本案之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make various changes and refinements without departing from the spirit and scope of the present case. The scope defined in the patent application is subject to change.
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