TWI627482B - Method for manufacturing display - Google Patents

Method for manufacturing display Download PDF

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Publication number
TWI627482B
TWI627482B TW106104305A TW106104305A TWI627482B TW I627482 B TWI627482 B TW I627482B TW 106104305 A TW106104305 A TW 106104305A TW 106104305 A TW106104305 A TW 106104305A TW I627482 B TWI627482 B TW I627482B
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layer
liquid crystal
electrode
forming
insulating layer
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TW106104305A
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TW201830111A (en
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余瑞斌
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友達光電股份有限公司
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Priority to CN201710223492.4A priority patent/CN106773236B/en
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1334Constructional arrangements; Manufacturing methods based on polymer dispersed liquid crystals, e.g. microencapsulated liquid crystals
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1337Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133711Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
    • G02F1/133723Polyimide, polyamide-imide
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1334Constructional arrangements; Manufacturing methods based on polymer dispersed liquid crystals, e.g. microencapsulated liquid crystals
    • G02F1/13345Network or three-dimensional gels

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Dispersion Chemistry (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Abstract

一種顯示裝置的製造方法,包含形成絕緣層於基板上。形成元件層於絕緣層上,元件層包含至少一電子元件。於絕緣層內形成接觸洞,其中絕緣層之材料為氧化矽、氮化矽或氮氧化矽。移除基板。形成電極於絕緣層相對於元件層之表面上以及接觸洞內,電極與至少一電子元件電性連接。形成液晶層於電極與對向基板之間。 A method for manufacturing a display device includes forming an insulating layer on a substrate. An element layer is formed on the insulating layer, and the element layer includes at least one electronic component. A contact hole is formed in the insulating layer. The material of the insulating layer is silicon oxide, silicon nitride, or silicon oxynitride. Remove the substrate. An electrode is formed on a surface of the insulating layer opposite to the element layer and in a contact hole, and the electrode is electrically connected to at least one electronic component. A liquid crystal layer is formed between the electrode and the opposite substrate.

Description

顯示裝置之製造方法 Manufacturing method of display device

本揭露是關於一種顯示裝置之製造方法。 The present disclosure relates to a method for manufacturing a display device.

液晶顯示裝置領域中,液晶顯示裝置包含陣列基板,彩色濾光片及配置在其間的液晶層。聚合物網絡液晶(Polymer Network Liquid Crystal;PNLC)包含高分子聚合物網絡以及液晶。液晶分布在聚合物三維網絡中,形成連續性的通道網。在不受電場作用下呈現混亂狀況,光學上呈現散射態(scattering or hazy type)。而在電場作用時,液晶受上下電場影響而呈現整齊排列,光學上呈現穿透態(transparent type)。由於聚合物網絡液晶具有廣視角、高反應速度以及低驅動電壓等優點,目前已廣泛地應用於顯示器中。 In the field of liquid crystal display devices, a liquid crystal display device includes an array substrate, a color filter, and a liquid crystal layer disposed therebetween. Polymer Network Liquid Crystal (PNLC) includes a polymer polymer network and a liquid crystal. Liquid crystals are distributed in a three-dimensional network of polymers, forming a continuous network of channels. Under the influence of no electric field, it presents a chaotic state and optically exhibits a scattering or hazy type. When an electric field is applied, the liquid crystal is neatly arranged by the influence of the upper and lower electric fields, and it is optically transparent. Because of the advantages of wide viewing angle, high response speed, and low driving voltage, polymer network liquid crystals have been widely used in displays.

目前,聚合物網絡液晶普遍使用紫外線(UV)聚合反應來進行單體聚合,然而,液晶面板內一般配置了金屬線、彩色濾光膜(color filter)與黑色矩陣(black matrix;BM)等結構,這些結構會遮蔽或吸收紫外光並降低單體聚合反應,影響聚合物網絡液晶的光電特性。 At present, polymer network liquid crystals generally use ultraviolet (UV) polymerization to polymerize monomers. However, liquid crystal panels are generally equipped with metal wires, color filters, and black matrix (BM) structures. These structures will shield or absorb ultraviolet light and reduce the monomer polymerization reaction, affecting the photoelectric properties of the polymer network liquid crystal.

為克服前述之問題,本揭露提供一種顯示裝置及其製造方法,降低了在液晶層進行聚合反應階段,紫外光受到遮蔽的問題,同時增加了整體液晶層聚合反應的均勻程度,提高了顯示裝置的光電特性。 In order to overcome the foregoing problems, the present disclosure provides a display device and a manufacturing method thereof, which reduces the problem of shielding ultraviolet light during the polymerization reaction stage of the liquid crystal layer, and simultaneously increases the uniformity of the polymerization reaction of the entire liquid crystal layer, thereby improving the display device Photoelectric characteristics.

本揭露之一實施例為一種顯示裝置,包含絕緣層、元件層、電極、對向基板以及液晶層。絕緣層具有接觸洞,其中絕緣層之材料為氧化矽、氮化矽,或氮氧化矽。元件層設置於絕緣層上,元件層包含至少一電子元件。電極設置於絕緣層相對於元件層之表面以及接觸洞內,其中電極與至少一電子元件電性連接。液晶層位於電極與對向基板之間。 An embodiment of the present disclosure is a display device including an insulating layer, an element layer, an electrode, an opposite substrate, and a liquid crystal layer. The insulating layer has a contact hole. The material of the insulating layer is silicon oxide, silicon nitride, or silicon oxynitride. The element layer is disposed on the insulating layer, and the element layer includes at least one electronic component. The electrode is disposed on a surface of the insulating layer opposite to the element layer and in a contact hole, wherein the electrode is electrically connected to at least one electronic component. The liquid crystal layer is located between the electrode and the opposite substrate.

本揭露之另一實施例為一種顯示裝置,包含絕緣層、元件層、電極、對向基板以及液晶層。絕緣層之材料為聚對苯二甲酸乙二酯、聚萘二甲酸乙二醇、聚醚、聚丙烯、硫化聚丙烯、聚碳酸酯、聚醚醯亞胺、聚苯硫醚、聚氧二甲苯、聚碸或聚鄰苯二甲醯胺。元件層設置於絕緣層上,元件層包含至少一電子元件及設置於至少一電子元件上的介電層,且介電層具有接觸洞。電極設置於元件層相對於該絕緣層之表面以及接觸洞內,其中電極與至少一電子元件電性連接。液晶層位於電極與對向基板之間。 Another embodiment of the present disclosure is a display device including an insulating layer, an element layer, an electrode, an opposite substrate, and a liquid crystal layer. The material of the insulating layer is polyethylene terephthalate, polyethylene naphthalate, polyether, polypropylene, vulcanized polypropylene, polycarbonate, polyetherimide, polyphenylene sulfide, polyoxydiene Toluene, polyfluorene or polyphthalamide. The element layer is disposed on the insulating layer. The element layer includes at least one electronic element and a dielectric layer disposed on the at least one electronic element. The dielectric layer has a contact hole. The electrode is disposed on a surface of the element layer opposite to the insulation layer and in a contact hole, wherein the electrode is electrically connected to at least one electronic component. The liquid crystal layer is located between the electrode and the opposite substrate.

本揭露之另一實施例為一種顯示裝置的製造方法,包含形成元件層於絕緣層上,元件層包含至少一電子 元件。於絕緣層上形成接觸洞,其中絕緣層之材料為氧化矽、氮化矽或氮氧化矽。形成電極於絕緣層相對於元件層之表面上以及接觸洞內,電極與至少一電子元件電性連接。形成液晶層於電極與對向基板之間。 Another embodiment of the present disclosure is a method for manufacturing a display device, which includes forming an element layer on an insulating layer, and the element layer includes at least one electron. element. A contact hole is formed in the insulating layer. The material of the insulating layer is silicon oxide, silicon nitride, or silicon oxynitride. An electrode is formed on a surface of the insulating layer opposite to the element layer and in a contact hole, and the electrode is electrically connected to at least one electronic component. A liquid crystal layer is formed between the electrode and the opposite substrate.

本揭露之又一實施例為一種顯示裝置的製造方法,包含形成元件層於絕緣層上,元件層包含至少一電子元件及設置於至少一電子元件上之介電層,其中絕緣層之材料為聚對苯二甲酸乙二酯、聚萘二甲酸乙二醇、聚醚、聚丙烯、硫化聚丙烯、聚碳酸酯、聚醚醯亞胺、聚苯硫醚、聚氧二甲苯、聚碸或聚鄰苯二甲醯胺。於介電層形成接觸洞。形成電極於元件層相對於絕緣層之表面上以及接觸洞內,電極與至少一電子元件電性連接。形成液晶層於電極與對向基板之間。 Another embodiment of the present disclosure is a method for manufacturing a display device, including forming an element layer on an insulating layer, the element layer including at least one electronic component and a dielectric layer disposed on the at least one electronic component, wherein the material of the insulating layer is Polyethylene terephthalate, polyethylene naphthalate, polyether, polypropylene, vulcanized polypropylene, polycarbonate, polyetherimine, polyphenylene sulfide, polyoxyxylene, polyfluorene, or Polyphthalamide. A contact hole is formed in the dielectric layer. An electrode is formed on a surface of the element layer opposite to the insulating layer and in a contact hole, and the electrode is electrically connected to at least one electronic component. A liquid crystal layer is formed between the electrode and the opposite substrate.

10、20‧‧‧顯示裝置 10, 20‧‧‧ display device

100、200‧‧‧基板 100, 200‧‧‧ substrate

110、210‧‧‧絕緣層 110, 210‧‧‧ Insulation

110a、210a‧‧‧表面 110a, 210a‧‧‧ surface

112、212‧‧‧接觸洞 112, 212‧‧‧ contact hole

120、220‧‧‧元件層 120, 220‧‧‧ component layer

121、221‧‧‧電子元件 121, 221‧‧‧ electronic components

123、223‧‧‧介電層 123, 223‧‧‧Dielectric layer

130、142、230、242‧‧‧電極 130, 142, 230, 242‧‧‧ electrodes

140、240、166、266‧‧‧對向基板 140, 240, 166, 266‧‧‧ Opposite substrates

140a‧‧‧側 140a‧‧‧side

144、244‧‧‧間隔物 144, 244‧‧‧ spacer

150、150’、250、250’‧‧‧液晶層 150, 150 ’, 250, 250’ ‧‧‧ liquid crystal layer

160、260‧‧‧遮光元件 160, 260‧‧‧shading element

162、262‧‧‧彩色濾光片 162, 262‧‧‧ color filters

164、264‧‧‧保護層 164, 264‧‧‧ protective layer

170、270‧‧‧光處理 170, 270‧‧‧light treatment

180、280‧‧‧背光模組 180, 280‧‧‧ backlight module

1211、2211‧‧‧閘極 1211, 2211‧‧‧‧Gate

1213、2213‧‧‧閘極介電質 1213, 2213‧‧‧‧Gate dielectric

1215、2215‧‧‧主動區 1215, 2215‧‧‧active zone

1217、2217‧‧‧汲極 1217, 2217‧‧‧ Drain

1219、2219‧‧‧源極 1219, 2219‧‧‧ source

閱讀以下詳細敘述並搭配對應之圖式,可了解本揭露之多個態樣。應注意,根據業界中的標準做法,多個特徵並非按比例繪製。事實上,多個特徵之尺寸可任意增加或減少以利於討論的清晰性。 Read the following detailed description and the corresponding drawings to understand the various aspects of this disclosure. It should be noted that according to standard practice in the industry, multiple features are not drawn to scale. In fact, the dimensions of multiple features can be arbitrarily increased or decreased to facilitate clarity of discussion.

第1A圖至第1I圖為本揭露之部分實施例之顯示裝置在不同製造階段的截面圖。 FIG. 1A to FIG. 1I are cross-sectional views of a display device according to some embodiments of the disclosure at different manufacturing stages.

第2A圖至第2I圖為本揭露之部分實施例之顯示裝置在不同製造階段的截面圖。 FIG. 2A to FIG. 2I are cross-sectional views of a display device of some embodiments of the disclosure at different manufacturing stages.

以下揭露提供眾多不同的實施例或範例,用於實施本案提供的主要內容之不同特徵。下文描述一特定範例之組件及配置以簡化本揭露。當然,此範例僅為示意性,且並不擬定限制。舉例而言,以下描述「第一特徵形成在第二特徵之上方或之上」,於實施例中可包括第一特徵與第二特徵直接接觸,且亦可包括在第一特徵與第二特徵之間形成額外特徵使得第一特徵及第二特徵無直接接觸。此外,本揭露可在各範例中重複使用元件符號及/或字母。此重複之目的在於簡化及釐清,且其自身並不規定所討論的各實施例及/或配置之間的關係。 The following disclosure provides many different embodiments or examples for implementing the different features of the main content provided in this case. The components and configurations of a specific example are described below to simplify this disclosure. Of course, this example is only illustrative and is not intended to be limiting. For example, the following description "the first feature is formed on or above the second feature", in the embodiment may include the first feature and the second feature in direct contact, and may also be included in the first feature and the second feature Additional features are formed between the first feature and the second feature without direct contact. In addition, the disclosure may reuse component symbols and / or letters in various examples. The purpose of this repetition is to simplify and clarify, and does not itself define the relationship between the embodiments and / or configurations discussed.

此外,空間相對術語,諸如「下方(beneath)」、「以下(below)」、「下部(lower)」、「上方(above)」、「上部(upper)」等等在本文中用於簡化描述,以描述如附圖中所圖示的一個元件或特徵結構與另一元件或特徵結構的關係。除了描繪圖示之方位外,空間相對術語也包含元件在使用中或操作下之不同方位。此設備可以其他方式定向(旋轉90度或處於其他方位上),而本案中使用之空間相對描述詞可相應地進行解釋。 In addition, spatially relative terms such as "beneath", "below", "lower", "above", "upper", etc. are used herein to simplify the description To describe the relationship between one element or feature and another element or feature as illustrated in the drawings. In addition to the orientation depicted, spatial relative terms also include the different orientations of an element in use or operation. This device can be oriented in other ways (rotated 90 degrees or at other orientations), and the spatially relative descriptors used in this case can be interpreted accordingly.

第1A圖至第1I圖為本揭露之部分實施例之顯示裝置10在不同製造階段的截面圖。請參照第1A圖,於基板100上形成絕緣層110。於部分實施例中,基板100可為玻璃基板或其他適合之材料。絕緣層110可為單層結構或是多層結構。於部分實施例中,絕緣層110之材料為氧化矽 (silicon oxide)、氮化矽(silicon nitride)、氮氧化矽(silicon oxynitride)或其他適合之材料。絕緣層110作為軟性基板,於後續的製程步驟當中將與基板100分離。於部分實施例中,絕緣層110與基板100之間可形成界面層,藉此在後續的基板剝離製程中,絕緣層110與基板100可在實質上無應力的狀態下分離。 FIG. 1A to FIG. 1I are cross-sectional views of the display device 10 at different manufacturing stages according to some embodiments of the disclosure. Referring to FIG. 1A, an insulating layer 110 is formed on the substrate 100. In some embodiments, the substrate 100 may be a glass substrate or other suitable materials. The insulating layer 110 may have a single-layer structure or a multi-layer structure. In some embodiments, the material of the insulating layer 110 is silicon oxide. (silicon oxide), silicon nitride, silicon oxynitride, or other suitable materials. The insulating layer 110 is used as a flexible substrate, and will be separated from the substrate 100 in the subsequent process steps. In some embodiments, an interface layer may be formed between the insulating layer 110 and the substrate 100, so that in a subsequent substrate peeling process, the insulating layer 110 and the substrate 100 may be separated in a substantially stress-free state.

請參照第1B圖,形成元件層120於絕緣層110上。元件層120包含至少一電子元件121。於本實施例中,電子元件121為薄膜電晶體,包含閘極1211、閘極介電質1213、主動區1215、汲極1217以及源極1219。其中電子元件121的形成方法可包含在絕緣層110上形成閘極1211;於閘極1211上形成閘極介電質1213;在閘極介電質1213上形成主動區1215,主動區1215之材料包含氧化銦鎵鋅(indium gallium zinc oxide;IGZO)、非晶矽、多晶矽、單晶矽或其他適合之半導體材料,主動區1215可為單層或多層;接著,在主動區1215上形成汲極1217以及源極1219。於部分實施例中,汲極1217以及源極1219為金屬。 Referring to FIG. 1B, an element layer 120 is formed on the insulating layer 110. The device layer 120 includes at least one electronic device 121. In this embodiment, the electronic component 121 is a thin film transistor, and includes a gate 1211, a gate dielectric 1213, an active region 1215, a drain 1217, and a source 1219. The method for forming the electronic component 121 may include forming a gate electrode 1211 on the insulating layer 110; forming a gate dielectric 1213 on the gate electrode 1211; and forming an active region 1215 and an active region 1215 on the gate dielectric 1213. It includes indium gallium zinc oxide (IGZO), amorphous silicon, polycrystalline silicon, single crystal silicon, or other suitable semiconductor materials. The active region 1215 may be a single layer or multiple layers. Then, a drain is formed on the active region 1215 1217 and the source 1219. In some embodiments, the drain electrode 1217 and the source electrode 1219 are metal.

於部分實施例中,元件層120更包含形成於電子元件121上的介電層123。介電層123可為樹酯材料,如環氧樹脂(epoxy resin)、丙烯酸樹脂(acrylic resin)或類似者。介電層123可為有機材料,如苯並環丁烯(benzocyclobutene)、聚對二甲苯(parylene)或類似者。介電層123亦可為氧化矽、氮化矽、氮氧化矽或上述之組 合。於部分實施例中,介電層123可省略。 In some embodiments, the device layer 120 further includes a dielectric layer 123 formed on the electronic device 121. The dielectric layer 123 may be a resin material, such as epoxy resin, acrylic resin, or the like. The dielectric layer 123 may be an organic material, such as benzocyclobutene, parylene, or the like. The dielectric layer 123 may also be silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof. Together. In some embodiments, the dielectric layer 123 may be omitted.

請參照第1C圖,配置色層(未標號)於介電層123上方,色層包括了遮光元件160以及彩色濾光片162。於部分實施例中,遮光元件160為黑色矩陣,其材料可為鉻(Cr)或是黑色樹酯。而彩色濾光片162可包含了紅(R)、綠(G)、藍(B)之彩色濾光片。遮光元件160對應至電子元件121的位置以在絕緣層110的垂直投影上完全重疊或部分重疊電子元件121,藉此阻擋或吸收散射之光線。在本實施例中,先形成彩色濾光片162後,再形成遮光元件160於彩色濾光片162上,但不以此為限,在其他變化例中,可先形成遮光元件160後,再形成彩色濾光片162於遮光元件160上。 Referring to FIG. 1C, a color layer (not labeled) is disposed above the dielectric layer 123. The color layer includes a light shielding element 160 and a color filter 162. In some embodiments, the light-shielding element 160 is a black matrix, and the material may be chromium (Cr) or a black resin. The color filter 162 may include red (R), green (G), and blue (B) color filters. The light-shielding element 160 corresponds to a position of the electronic element 121 to completely or partially overlap the electronic element 121 on a vertical projection of the insulating layer 110, thereby blocking or absorbing scattered light. In this embodiment, the color filter 162 is formed first, and then the light-shielding element 160 is formed on the color filter 162, but is not limited thereto. In other variations, the light-shielding element 160 may be formed first, and then A color filter 162 is formed on the light shielding element 160.

接下來,選擇性將保護層164(overcoat layer)形成於遮光元件160以及彩色濾光片162上。保護層164可為透光之有機材料或是無機材料。保護層164具有實質上平坦之上表面。接著,配置第一對向基板166於保護層164上。於部分實施例中,第一對向基板166為玻璃基板,或其他適合之材料。選擇性地,可利用膠合層將第一對向基板166與色層緊密貼合對組,但不以此為限。在其他變化例中,亦可先形成遮光元件160於第一對向基板166上後,再形成彩色濾光片162於遮光元件160上,之後將此具有第一對向基板166、遮光元件160以及彩色濾光片162之構件與第1B圖中之結構對組接合,譬如是利用膠合層使其接合。 Next, an overcoat layer 164 is selectively formed on the light shielding element 160 and the color filter 162. The protective layer 164 may be a transparent organic material or an inorganic material. The protective layer 164 has a substantially flat upper surface. Next, a first opposing substrate 166 is disposed on the protective layer 164. In some embodiments, the first opposite substrate 166 is a glass substrate, or other suitable materials. Alternatively, the first opposing substrate 166 and the color layer may be closely adhered to the pair by using an adhesive layer, but not limited thereto. In other variations, a light-shielding element 160 may be formed on the first opposing substrate 166 first, and then a color filter 162 may be formed on the light-shielding element 160, and then the light-emitting element 160 having the first opposite substrate 166 and the light-shielding element 160 may be formed. And the components of the color filter 162 are joined to the structure in FIG. 1B in pairs, for example, they are joined by an adhesive layer.

請參照第1D圖,執行基板剝離製程,藉此將基板100與絕緣層110分離。基板100剝離之後,曝露出絕緣 層110之一表面110a。 Referring to FIG. 1D, a substrate peeling process is performed to separate the substrate 100 from the insulating layer 110. After the substrate 100 is peeled off, the insulation is exposed One surface 110a of the layer 110.

請參照第1E圖,形成接觸洞112。接觸洞112貫穿絕緣層110以及元件層120之電子元件121(如第1B圖所示)之閘極介電質1213,並暴露出電子元件121之汲極1217。詳細而言,形成接觸洞112的步驟是先將顯示裝置10(如第1D圖之剝離基板100後之顯示裝置10)翻轉,使得絕緣層110之表面110a朝上。接著,於絕緣層110上形成遮罩層,遮罩層經圖案化以形成開口,其中開口定義接觸洞112之位置。接著,對絕緣層110以及閘極介電質1213執行蝕刻製程,藉此形成接觸洞112。可使用乾蝕刻、濕蝕刻,或其他適合之蝕刻技術來形成接觸洞112,此外,可將汲極1217作用為上述絕緣層110以及閘極介電質1213之蝕刻製程之蝕刻停止層。 Referring to FIG. 1E, a contact hole 112 is formed. The contact hole 112 penetrates the gate dielectric 1213 of the electronic component 121 (as shown in FIG. 1B) of the insulating layer 110 and the element layer 120, and exposes the drain electrode 1217 of the electronic component 121. In detail, the step of forming the contact hole 112 is to first flip the display device 10 (such as the display device 10 after the substrate 100 is peeled off in FIG. 1D) so that the surface 110 a of the insulating layer 110 faces upward. Next, a masking layer is formed on the insulating layer 110, and the masking layer is patterned to form an opening, wherein the opening defines a position of the contact hole 112. Next, an etching process is performed on the insulating layer 110 and the gate dielectric 1213 to form a contact hole 112. The contact hole 112 can be formed using dry etching, wet etching, or other suitable etching techniques. In addition, the drain electrode 1217 can be used as an etch stop layer in the above-mentioned etching process of the insulating layer 110 and the gate dielectric 1213.

請參照第1F圖,形成第一電極130於絕緣層110之表面110a以及接觸洞112內。第一電極130與元件層120內之電子元件121電性連接。詳細而言,第一電極130是透過接觸洞112與汲極1217電性連接。從另一角度而言,第一電極130形成於絕緣層110相對於元件層120之表面110a上。於部分實施例中,第一電極130可包括金屬氧化物例如氧化銦錫(ITO)、氧化銦鋅(IZO)、氧化鋁鋅(AZO)、氧化鋁銦(AIO)、氧化銦(InO)、氧化鎵(gallium oxide;GaO);奈米碳管、奈米銀顆粒;厚度小於60奈米(nm)的金屬或合金、有機透明導電材料或其它適合的透明導電材料。此外,形成第一電極130之方法類似於第1E圖, 先將第1E圖之顯示裝置10翻轉,使得絕緣層110之曝露的表面110a以及接觸洞112朝上。再藉由適合的沉積技術(如電子束蒸發、化學氣相沉積或物理氣相沉積等適合之技術)形成第一電極130。此外,第一電極130可進一步進行圖案化以獲得所欲之功能電路。 Referring to FIG. 1F, a first electrode 130 is formed on the surface 110 a of the insulating layer 110 and the contact hole 112. The first electrode 130 is electrically connected to the electronic device 121 in the device layer 120. In detail, the first electrode 130 is electrically connected to the drain electrode 1217 through the contact hole 112. From another perspective, the first electrode 130 is formed on a surface 110 a of the insulating layer 110 opposite to the element layer 120. In some embodiments, the first electrode 130 may include a metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc aluminum oxide (AZO), indium aluminum oxide (AIO), indium oxide (InO), Gallium oxide (GaO); nanometer carbon tubes, nanometer silver particles; metal or alloy with a thickness less than 60 nanometers (nm), organic transparent conductive materials, or other suitable transparent conductive materials. In addition, the method of forming the first electrode 130 is similar to FIG. 1E. First, the display device 10 in FIG. 1E is turned over so that the exposed surface 110a and the contact hole 112 of the insulating layer 110 face upward. The first electrode 130 is formed by a suitable deposition technique (such as a suitable technique such as electron beam evaporation, chemical vapor deposition, or physical vapor deposition). In addition, the first electrode 130 may be further patterned to obtain a desired functional circuit.

請參照第1G圖,配置一第二對向基板140於第一電極130的對側。其中第二對向基板140上形成有第二電極142。第二電極142之材料可類似於第一電極130之材料。此外,可在第二電極142與第一電極130之間配置間隔物144,以在第二對向基板140(或第二電極142)與第一電極130之間形成間隙G,間隙G用以在後續步驟中填充液晶材料。 Referring to FIG. 1G, a second opposite substrate 140 is disposed on the opposite side of the first electrode 130. A second electrode 142 is formed on the second opposite substrate 140. The material of the second electrode 142 may be similar to that of the first electrode 130. In addition, a spacer 144 may be disposed between the second electrode 142 and the first electrode 130 to form a gap G between the second opposite substrate 140 (or the second electrode 142) and the first electrode 130. The gap G is used for The liquid crystal material is filled in a subsequent step.

請參照第1H圖,於間隙G內填充液晶材料,藉此在第二對向基板140(或第二電極142)與第一電極130之間形成液晶層150。於部分實施例中,液晶層150之材料為混合單體之液晶材料或其他液晶材料。 Referring to FIG. 1H, a liquid crystal material is filled in the gap G, thereby forming a liquid crystal layer 150 between the second opposite substrate 140 (or the second electrode 142) and the first electrode 130. In some embodiments, the material of the liquid crystal layer 150 is a mixed monomer liquid crystal material or other liquid crystal materials.

接著,對液晶層150執行光處理170。於本實施例中,光處理170例如係經由對液晶層150照射紫外光(UV),藉此讓液晶層150之單體進行聚合反應以形成液晶層150’(如第1I圖),液晶層150’之材料為聚合物網絡液晶、聚合物網絡液晶(Polymer Network Liquid Crystal)、聚合物分散型液晶(Polymer Dispersed Liquid Crystal)或膽固醇液晶(Cholesteric Liquid Crystal)等等,此步驟舉例為光聚合導致相分離 (Photopolynerization induced phase separation)。詳細而言,光處理170是由第二對向基板140遠離第一電極130之一側140a對液晶層150執行。換句話說,紫外光乃是通過第二對向基板140以及第二電極142對液晶層150中之單體進行聚合反應。 Next, a light process 170 is performed on the liquid crystal layer 150. In this embodiment, for example, the light treatment 170 is performed by irradiating the liquid crystal layer 150 with ultraviolet light (UV), thereby allowing the monomers of the liquid crystal layer 150 to undergo a polymerization reaction to form a liquid crystal layer 150 ′ (as shown in FIG. 1I). The material of 150 'is polymer network liquid crystal, polymer network liquid crystal, polymer dispersed liquid crystal, or cholesterol liquid crystal, etc. This step is exemplified by photopolymerization. Phase separation (Photopolynerization induced phase separation). In detail, the light treatment 170 is performed on the liquid crystal layer 150 by the side 140 a of the second opposite substrate 140 away from the first electrode 130. In other words, the ultraviolet light polymerizes the monomers in the liquid crystal layer 150 through the second opposite substrate 140 and the second electrode 142.

本實施例中,液晶層150與元件層120及遮光元件160分別配置於絕緣層110之相對兩側。因此,在單體的聚合反應期間,紫外光可直接地通過第二對向基板140以及第二電極142對液晶層150中之單體進行聚合反應,而不會受到元件層120中電子元件121的金屬配線、彩色濾光片162或遮光元件160的影響(如:紫外光受到遮蔽或是被吸收)。此外,將液晶層150配置於絕緣層110之另一側使得第一電極130與第二電極142提供大體上平坦之表面,讓液晶材料可均勻地分布於液晶層150內。透過此配置,液晶層150’具有更好的光電特性。 In this embodiment, the liquid crystal layer 150, the element layer 120, and the light shielding element 160 are respectively disposed on opposite sides of the insulating layer 110. Therefore, during the polymerization of the monomers, the ultraviolet light can directly polymerize the monomers in the liquid crystal layer 150 through the second opposite substrate 140 and the second electrode 142 without being affected by the electronic component 121 in the element layer 120. The metal wiring, the color filter 162, or the light shielding element 160 (such as: ultraviolet light is shielded or absorbed). In addition, the liquid crystal layer 150 is disposed on the other side of the insulating layer 110 so that the first electrode 130 and the second electrode 142 provide a substantially flat surface, so that the liquid crystal material can be uniformly distributed in the liquid crystal layer 150. Through this configuration, the liquid crystal layer 150 'has better photoelectric characteristics.

參照第1I圖,配置背光模組180。於本實施例中,背光模組180配置於液晶層150’相對於遮光元件160(或彩色濾光片162)的一側。因此,背光模組180、液晶層150、元件層120以及彩色濾光片162(或遮光元件160)於第1I圖中是由下而上依序排列的。換句話說,光線先經由背光模組180提供後,經由液晶層150’,再通過彩色濾光片162(或遮光元件160)射出。具體而言,光線先經過液晶層150,再經過彩色濾光片162會具有較佳的色彩以及光學表現。於部分實施例中,背光模組180可為直下式背光模組 或側光式背光模組。 Referring to FIG. 11, a backlight module 180 is configured. In this embodiment, the backlight module 180 is disposed on a side of the liquid crystal layer 150 'opposite to the light shielding element 160 (or the color filter 162). Therefore, the backlight module 180, the liquid crystal layer 150, the element layer 120, and the color filter 162 (or the light shielding element 160) are sequentially arranged from bottom to top in FIG. In other words, the light is first provided through the backlight module 180, then through the liquid crystal layer 150 ', and then emitted through the color filter 162 (or the light shielding element 160). Specifically, light passing through the liquid crystal layer 150 and then passing through the color filter 162 will have better color and optical performance. In some embodiments, the backlight module 180 may be a direct type backlight module Or edge-lit backlight module.

第2A圖至第2I圖為本揭露之部分實施例之顯示裝置20在不同製造階段的截面圖。請參照第2A圖,於基板200上形成絕緣層210。於部分實施例中,基板200可為玻璃基板或其他適合之材料。絕緣層210之材料舉例為聚對苯二甲酸乙二酯(polyethylene terephthalate;PET)、聚萘二甲酸乙二醇(polyethylene naphthalate;PEN)、聚醚(polyethersulfone;PES)、聚丙烯(polypropylene)、硫化聚丙烯(polypropylene sulfide)、聚碳酸酯(polycarbonate)、聚醚醯亞胺(polyetherimide;PEI)、聚苯硫醚(polyphenylene sulfide;PPS)、聚氧二甲苯(polyphenylene oxide;PPO)、聚碸(polysulfone)或聚鄰苯二甲醯胺(polyphthalamide;PPA)。絕緣層210作為軟性基板,於後續的製程步驟當中將與基板200分離。於部分實施例中,絕緣層210與基板200之間可形成有界面層,藉此在後續的基板剝離製程中,基板200可在實質上無應力的狀態下剝離。 FIG. 2A to FIG. 2I are cross-sectional views of the display device 20 at different manufacturing stages according to some embodiments of the disclosure. Referring to FIG. 2A, an insulating layer 210 is formed on the substrate 200. In some embodiments, the substrate 200 may be a glass substrate or other suitable materials. Examples of the material of the insulating layer 210 include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polypropylene, polypropylene, Polypropylene sulfide, polycarbonate, polyetherimide (PEI), polyphenylene sulfide (PPS), polyphenylene oxide (PPO), polyfluorene (polysulfone) or polyphthalamide (PPA). The insulating layer 210 is used as a flexible substrate, and will be separated from the substrate 200 in a subsequent process step. In some embodiments, an interface layer may be formed between the insulating layer 210 and the substrate 200, so that in the subsequent substrate peeling process, the substrate 200 may be peeled in a substantially stress-free state.

請參照第2B圖,形成元件層220於基板200及絕緣層210上。元件層220包含至少一電子元件221。於本實施例中,電子元件221為薄膜電晶體,包含閘極2211、閘極介電質2213、主動區2215、汲極2217以及源極2219。其中電子元件221的形成方法可包含在絕緣層210上形成閘極2211。於閘極2211上形成閘極介電質2213;在閘極介電質2213上形成主動區2215,主動區2215之材料包含氧化銦 鎵鋅、非晶矽、多晶矽、單晶矽或其他適合之半導體材料。主動區2215可為單層或多層;接著,在主動區2215上形成汲極2217以及源極2219。於部分實施例中,汲極2217以及源極2219為金屬。 Referring to FIG. 2B, an element layer 220 is formed on the substrate 200 and the insulating layer 210. The device layer 220 includes at least one electronic device 221. In this embodiment, the electronic component 221 is a thin film transistor, and includes a gate electrode 2211, a gate dielectric 2213, an active region 2215, a drain electrode 2217, and a source electrode 2219. The method for forming the electronic component 221 may include forming a gate electrode 2211 on the insulating layer 210. A gate dielectric 2213 is formed on the gate 2211; an active region 2215 is formed on the gate dielectric 2213, and the material of the active region 2215 includes indium oxide Gallium zinc, amorphous silicon, polycrystalline silicon, single crystal silicon or other suitable semiconductor materials. The active region 2215 may be a single layer or multiple layers. Then, a drain electrode 2217 and a source electrode 2219 are formed on the active region 2215. In some embodiments, the drain electrode 2217 and the source electrode 2219 are metal.

於部分實施例中,元件層220更包含形成於電子元件221上的介電層223。介電層223可為樹酯材料,如環氧樹脂、丙烯酸樹脂或類似者。介電層223可為有機材料,如苯並環丁烯、聚對二甲苯或類似者。介電層223亦可為絕緣材料,如氧化矽、氮化矽、氮氧化矽或上述之組合。於部分實施例中,介電層223可省略。 In some embodiments, the element layer 220 further includes a dielectric layer 223 formed on the electronic element 221. The dielectric layer 223 may be a resin material, such as an epoxy resin, an acrylic resin, or the like. The dielectric layer 223 may be an organic material, such as benzocyclobutene, parylene, or the like. The dielectric layer 223 may also be an insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof. In some embodiments, the dielectric layer 223 may be omitted.

請參照第2C圖,形成接觸洞212。接觸洞212貫穿介電層223,並暴露出汲極2217。詳細而言,形成接觸洞212的步驟包含先於介電層223上形成遮罩層(未繪示),遮罩層經圖案化以形成開口,其中開口定義接觸洞212之位置。接著,執行蝕刻製程以去除部分的介電層223,藉此形成接觸洞212。上述蝕刻製程包含乾蝕刻、濕蝕刻或其他適合之蝕刻技術來形成接觸洞212。此外,可將汲極特徵2217作用為介電層223之蝕刻停止層。 Referring to FIG. 2C, a contact hole 212 is formed. The contact hole 212 penetrates the dielectric layer 223 and exposes the drain electrode 2217. In detail, the step of forming the contact hole 212 includes forming a masking layer (not shown) on the dielectric layer 223, and the masking layer is patterned to form an opening, wherein the opening defines the position of the contact hole 212. Next, an etching process is performed to remove a portion of the dielectric layer 223, thereby forming a contact hole 212. The above-mentioned etching process includes dry etching, wet etching, or other suitable etching techniques to form the contact holes 212. In addition, the drain feature 2217 can be used as an etch stop layer for the dielectric layer 223.

請參照第2D圖,形成第一電極230於介電層223之表面以及接觸洞212內。第一電極230實質上與元件層220內之電子元件221電性連接。詳細而言,第一電極230透過接觸洞212與汲極2217電性連接。從另一角度而言,第一電極230形成於元件層220之介電層223相對於絕緣層210之表面。於部分實施例中,第一電極230可包括金屬氧 化物例如氧化銦錫、氧化銦鋅、氧化鋁鋅、氧化鋁銦、氧化銦、氧化鎵;奈米碳管、奈米銀顆粒;厚度小於60奈米(nm)的金屬或合金、有機透明導電材料或其它適合的透明導電材料。可藉由適合的沉積技術(如電子束蒸發、化學氣相沉積、物理氣相沉積等適合之技術)形成第一電極230。此外,第一電極230可進一步進行圖案化以獲得所欲之功能電路。 Referring to FIG. 2D, a first electrode 230 is formed on the surface of the dielectric layer 223 and the contact hole 212. The first electrode 230 is substantially electrically connected to the electronic device 221 in the device layer 220. In detail, the first electrode 230 is electrically connected to the drain electrode 2217 through the contact hole 212. From another perspective, the first electrode 230 is formed on a surface of the dielectric layer 223 of the element layer 220 opposite to the insulating layer 210. In some embodiments, the first electrode 230 may include metal oxygen. Compounds such as indium tin oxide, indium zinc oxide, zinc aluminum oxide, indium aluminum oxide, indium oxide, gallium oxide; carbon nanotubes, nano silver particles; metals or alloys with a thickness of less than 60 nanometers (nm), organic transparent conductive Materials or other suitable transparent conductive materials. The first electrode 230 may be formed by a suitable deposition technique (such as a suitable technique such as electron beam evaporation, chemical vapor deposition, physical vapor deposition, etc.). In addition, the first electrode 230 may be further patterned to obtain a desired functional circuit.

請參照第2E圖,配置第一對向基板240於第一電極230的對側。其中第一對向基板240上形成有第二電極242。第二電極242之材料可類似於第一電極230之材料。此外,可在第二電極242與第一電極230之間配置間隔物244,以在第一對向基板240(或第二電極242)與第一電極230之間形成間隙G,間隙G用以在後續步驟中填充液晶材料。 Referring to FIG. 2E, the first opposing substrate 240 is disposed on the opposite side of the first electrode 230. A second electrode 242 is formed on the first opposite substrate 240. The material of the second electrode 242 may be similar to that of the first electrode 230. In addition, a spacer 244 may be disposed between the second electrode 242 and the first electrode 230 to form a gap G between the first opposite substrate 240 (or the second electrode 242) and the first electrode 230. The gap G is used for The liquid crystal material is filled in a subsequent step.

請參照第2F圖,於間隙G內填充液晶材料,藉此在第一對向基板240(或第二電極242)與第一電極230之間形成液晶層250。於部分實施例中,液晶層250之材料為混合單體之液晶材料或其他液晶材料。 Referring to FIG. 2F, a liquid crystal material is filled in the gap G, thereby forming a liquid crystal layer 250 between the first opposite substrate 240 (or the second electrode 242) and the first electrode 230. In some embodiments, the material of the liquid crystal layer 250 is a liquid crystal material of mixed monomers or other liquid crystal materials.

接著,對液晶層250執行光處理270。於本實施例中,光處理270例如係經由對液晶層250照射紫外光(UV),藉此讓液晶層250之單體進行聚合反應以形成液晶層250’(如第2G圖),液晶層250’之材料為聚合物網絡液晶、聚合物分散型液晶(Polymer Dispersed Liquid Crystal)或膽固醇液晶(Cholesteric Liquid Crystal),此 步驟舉例為光聚合導致相分離(Photopolymerization induced phase separation)。詳細而言,光處理270是由第一對向基板240遠離第一電極230之一側對液晶層250執行。換句話說,紫外光乃是通過第一對向基板240以及第二電極242對液晶層250中之單體進行聚合反應。 Next, a light process 270 is performed on the liquid crystal layer 250. In this embodiment, the light treatment 270 is, for example, by irradiating the liquid crystal layer 250 with ultraviolet light (UV), thereby allowing the monomers of the liquid crystal layer 250 to undergo a polymerization reaction to form a liquid crystal layer 250 ′ (as shown in FIG. 2G). The material of 250 'is polymer network liquid crystal, polymer dispersed liquid crystal (Polymer Dispersed Liquid Crystal) or cholesterol liquid crystal (Cholesteric Liquid Crystal). An example of the step is Photopolymerization induced phase separation. In detail, the light processing 270 is performed on the liquid crystal layer 250 by a side of the first opposite substrate 240 away from the first electrode 230. In other words, the ultraviolet light polymerizes the monomers in the liquid crystal layer 250 through the first opposing substrate 240 and the second electrode 242.

請參照第2G圖,執行基板剝離製程,藉此將基板200與絕緣層210分離。基板200剝離之後,絕緣層210之一表面210a曝露。 Referring to FIG. 2G, a substrate peeling process is performed to separate the substrate 200 from the insulating layer 210. After the substrate 200 is peeled off, one surface 210a of the insulating layer 210 is exposed.

請參照第2H圖,配置色層(未標號)於絕緣層210下方使得絕緣層210位於色層以及元件層220之間,色層包括遮光元件260以及彩色濾光片262。於部分實施例中,遮光元件260為黑色矩陣,其材料可為鉻或是黑色樹酯。而彩色濾光片262可包含紅、綠、藍之彩色濾光片。遮光元件260對應至電子元件221的位置以在絕緣層210的垂直投影上完全重疊或部分重疊電子元件221,藉此阻擋或吸收散射之光線。 Referring to FIG. 2H, a color layer (not labeled) is disposed below the insulating layer 210 so that the insulating layer 210 is located between the color layer and the element layer 220. The color layer includes a light shielding element 260 and a color filter 262. In some embodiments, the light-shielding element 260 is a black matrix, and the material may be chromium or black resin. The color filter 262 may include red, green, and blue color filters. The light-shielding element 260 corresponds to a position of the electronic element 221 to completely or partially overlap the electronic element 221 on a vertical projection of the insulating layer 210, thereby blocking or absorbing scattered light.

此外,保護層264形成於絕緣層210與彩色濾光片262之間。保護層264可為透光之有機材料或是無機材料。保護層264可作為絕緣層210與彩色濾光片262之間的附著層,使彩色濾光片262附著於絕緣層210上。接著,配置第二對向基板266於彩色濾光片262上。於部分實施例中,第二對向基板266為玻璃基板或其他適合之材料。於部分實施例中,第二對向基板266與彩色濾光片262可配置有另一保護層。在其他變化例中,亦可先形成遮光元件260於 第一對向基板266上後,再形成彩色濾光片262於遮光元件160上,之後將此具有第一對向基板266、遮光元件260以及彩色濾光片262之構件與第2G圖中之已與基板200分離之結構對組接合,譬如是利用膠合層使其接合。然而,在其他變化例中,亦可先形成彩色濾光片262於第一對向基板266上後,再形成遮光元件260於彩色濾光片262上,之後將此具有第一對向基板266、彩色濾光片262以及遮光元件260之構件與第2G圖中之已與基板200分離之結構對組接合,譬如是利用膠合層使其接合。 In addition, a protective layer 264 is formed between the insulating layer 210 and the color filter 262. The protective layer 264 may be a transparent organic material or an inorganic material. The protective layer 264 can be used as an adhesion layer between the insulating layer 210 and the color filter 262, so that the color filter 262 is attached to the insulating layer 210. Next, a second opposing substrate 266 is disposed on the color filter 262. In some embodiments, the second opposite substrate 266 is a glass substrate or other suitable materials. In some embodiments, the second opposite substrate 266 and the color filter 262 may be provided with another protective layer. In other variations, the light-shielding element 260 may be formed first. After the first opposing substrate 266 is formed, a color filter 262 is formed on the light shielding element 160, and then the component having the first opposing substrate 266, the light shielding element 260, and the color filter 262 is shown in FIG. 2G. The structures that have been separated from the substrate 200 are bonded in pairs, for example, by bonding with an adhesive layer. However, in other variations, a color filter 262 may be formed on the first counter substrate 266 first, and then a light shielding element 260 may be formed on the color filter 262, and then the first counter substrate 266 may be formed. The components of the color filter 262 and the light-shielding element 260 are bonded to the structure separated from the substrate 200 in FIG. 2G, for example, by bonding with an adhesive layer.

本實施例中,液晶層250’以及遮光元件260分別配置於絕緣層210之相對兩側,且元件層220配置於液晶層250’與絕緣層210之間。因此,在液晶層250的聚合反應期間,紫外光可直接地通過第一對向基板240以及第二電極242對液晶層250進行聚合反應,而不會受到元件層220中電子元件221的金屬配線、彩色濾光片262或遮光元件260的影響(如:紫外光受到遮蔽或是被吸收)。此外,第一電極230與第二電極242提供大體上平坦之表面,讓液晶材料可均勻地分布於液晶層250’內。透過此配置,液晶層250’具有更好的光電特性。 In this embodiment, the liquid crystal layer 250 'and the light shielding element 260 are respectively disposed on opposite sides of the insulating layer 210, and the element layer 220 is disposed between the liquid crystal layer 250' and the insulating layer 210. Therefore, during the polymerization reaction of the liquid crystal layer 250, the ultraviolet light can directly polymerize the liquid crystal layer 250 through the first counter substrate 240 and the second electrode 242 without being subjected to the metal wiring of the electronic component 221 in the element layer 220. , The influence of the color filter 262 or the light shielding element 260 (for example, the ultraviolet light is blocked or absorbed). In addition, the first electrode 230 and the second electrode 242 provide a substantially flat surface, so that the liquid crystal material can be uniformly distributed in the liquid crystal layer 250 '. Through this configuration, the liquid crystal layer 250 'has better photoelectric characteristics.

參照第2I圖,配置背光模組280。於本實施例中,背光模組280配置於液晶層250’相對於遮光元件260(或彩色濾光片262)的一側。因此,背光模組280、液晶層250’、元件層220以及彩色濾光片262(或遮光元件260)於第2I圖中是由上而下依序排列的。換句話說,光線 是先經由背光模組280提供後,經由液晶層250’,再通過彩色濾光片262(或遮光元件260)射出。具體而言,光線先經過液晶層250’,再經過彩色濾光片262會具有較佳的色彩以及光學表現。於部分實施例中,背光模組280可為直下式背光模組或是側光式背光模組。 Referring to FIG. 2I, a backlight module 280 is disposed. In this embodiment, the backlight module 280 is disposed on a side of the liquid crystal layer 250 'opposite to the light shielding element 260 (or the color filter 262). Therefore, the backlight module 280, the liquid crystal layer 250 ', the element layer 220, and the color filter 262 (or the light shielding element 260) are sequentially arranged from top to bottom in FIG. 2I. In other words, light It is first provided through the backlight module 280, then through the liquid crystal layer 250 ', and then emitted through the color filter 262 (or the light shielding element 260). Specifically, light passing through the liquid crystal layer 250 'and then passing through the color filter 262 will have better color and optical performance. In some embodiments, the backlight module 280 may be a direct type backlight module or an edge type backlight module.

本揭露透過基板分離技術,將液晶層與遮光元件分別設置於絕緣層之兩側。使得液晶層在進行聚合反應的期間,不會受到遮光元件或是電子元件的金屬配線之影響,進而導致入射光(如紫外光)遭到遮蔽或是吸收。換句話說,此配置的優點在於讓液晶層中之單體可以在最低遮蔽的狀態下進行聚合反應,使得液晶層各處能產生均勻的聚合反應,進而增加顯示器整體的光電特性。 The present disclosure provides a liquid crystal layer and a light-shielding element on two sides of an insulating layer through a substrate separation technology. During the polymerization reaction, the liquid crystal layer is not affected by the light-shielding element or the metal wiring of the electronic element, thereby causing incident light (such as ultraviolet light) to be shielded or absorbed. In other words, the advantage of this configuration is that the monomers in the liquid crystal layer can be polymerized in the state of the lowest shielding, so that a uniform polymerization reaction can be generated everywhere in the liquid crystal layer, thereby increasing the overall photoelectric characteristics of the display.

本揭露基於上述結構,進一步將背光模組配置於液晶層相對於彩色濾光片(或遮光元件)之一側。光線先經由背光模組280提供後,經由液晶層250,再通過彩色濾光片262(或遮光元件260)射出。具體而言,光線先經過液晶層,再經過彩色濾光片而射出。此配置可使具顯示裝置有較佳的色彩以及光學表現。 Based on the above structure, the present disclosure further arranges the backlight module on one side of the liquid crystal layer opposite to the color filter (or light shielding element). The light is first provided through the backlight module 280, then through the liquid crystal layer 250, and then emitted through the color filter 262 (or the light shielding element 260). Specifically, light passes through the liquid crystal layer and then passes through a color filter to be emitted. This configuration enables the display device to have better color and optical performance.

上文概述了若干實施例的特徵,以便本領域熟習此項技藝者可更好地理解本揭示案的態樣。本領域熟習此項技藝者應當瞭解到他們可容易地使用本揭示案作為基礎來設計或者修改其他製程及結構,以實行相同目的及/或實現相同優勢的。本領域熟習此項技藝者亦應當瞭解到,此類等效構造不脫離本揭示案的精神及範疇,以及在不脫 離本揭示案的精神及範疇的情況下,其可對本文進行各種改變、取代及變更。 The features of several embodiments are summarized above so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art should understand that they can easily use this disclosure as a basis to design or modify other processes and structures to achieve the same purpose and / or achieve the same advantages. Those skilled in the art should also understand that such equivalent structures do not depart from the spirit and scope of this disclosure, and Without departing from the spirit and scope of this disclosure, it can make various changes, substitutions and alterations to this article.

Claims (8)

一種顯示裝置的製造方法,包含:形成一絕緣層於一基板上;形成一元件層於該絕緣層上,該元件層包含至少一電子元件;於該絕緣層形成一接觸洞,其中該絕緣層之材料為氧化矽、氮化矽或氮氧化矽;移除該基板;形成一電極於該絕緣層相對於該元件層之一表面上以及該接觸洞內,該電極與該至少一電子元件電性連接;以及形成一液晶層於該電極與一對向基板之間。A method for manufacturing a display device includes: forming an insulating layer on a substrate; forming an element layer on the insulating layer, the element layer including at least one electronic component; forming a contact hole in the insulating layer, wherein the insulating layer The material is silicon oxide, silicon nitride or silicon oxynitride; the substrate is removed; an electrode is formed on a surface of the insulating layer opposite to the element layer and in the contact hole, and the electrode is electrically connected to the at least one electronic component. And a liquid crystal layer is formed between the electrode and the opposite substrate. 如請求項1所述之方法,更包含:形成一遮光元件於該元件層上。The method according to claim 1, further comprising: forming a light-shielding element on the element layer. 如請求項2所述之方法,更包含:配置一背光模組於該液晶層相對於該遮光元件的一側。The method according to claim 2, further comprising: arranging a backlight module on a side of the liquid crystal layer opposite to the light shielding element. 一種顯示裝置的製造方法,包含:形成一元件層於一絕緣層上,該元件層包含至少一電子元件;形成一遮光元件於該元件層上;於該絕緣層形成一接觸洞,其中該絕緣層之材料為氧化矽、氮化矽或氮氧化矽;形成一電極於該絕緣層相對於該元件層之一表面上以及該接觸洞內,該電極與該至少一電子元件電性連接;以及形成一液晶層於該電極與一對向基板之間,其中形成該液晶層於該電極與該對向基板之間之步驟係包含:形成混合單體之液晶材料於該電極與該對向基板之間;以及由該對向基板遠離該電極之一側對該混合單體之液晶材料執行光處理,藉此讓該單體進行聚合反應以形成該液晶層,該液晶層之材料為聚合物網絡液晶、聚合物分散型液晶(Polymer Dispersed Liquid Crystal)或膽固醇液晶(Cholesteric Liquid Crystal)。A method for manufacturing a display device includes: forming an element layer on an insulating layer, the element layer including at least one electronic element; forming a light shielding element on the element layer; forming a contact hole in the insulating layer, wherein the insulation The material of the layer is silicon oxide, silicon nitride or silicon oxynitride; forming an electrode on a surface of the insulating layer opposite to the element layer and in the contact hole, the electrode is electrically connected to the at least one electronic component; and Forming a liquid crystal layer between the electrode and the opposite substrate, wherein the step of forming the liquid crystal layer between the electrode and the opposite substrate includes forming a liquid crystal material of a mixed monomer between the electrode and the opposite substrate Between; and performing a light treatment on the liquid crystal material of the mixed monomer from the side of the opposite substrate away from the electrode, thereby allowing the monomer to undergo a polymerization reaction to form the liquid crystal layer, and the material of the liquid crystal layer is a polymer Network liquid crystal, polymer dispersed liquid crystal (Polymer Dispersed Liquid Crystal) or cholesterol liquid crystal (Cholesteric Liquid Crystal). 一種顯示裝置的製造方法,包含:形成一絕緣層於一基板上;形成一元件層於該絕緣層上,該元件層包含至少一電子元件及設置於該至少一電子元件上之一介電層,其中該絕緣層之材料為聚對苯二甲酸乙二酯、聚萘二甲酸乙二醇、聚醚、聚丙烯、硫化聚丙烯、聚碳酸酯、聚醚醯亞胺、聚苯硫醚、聚氧二甲苯、聚碸或聚鄰苯二甲醯胺;於該介電層上形成一接觸洞;形成一電極於該元件層相對於該絕緣層之一表面上以及該接觸洞內,該電極與該至少一電子元件電性連接;形成一液晶層於該電極與一對向基板之間;以及移除該基板。A method for manufacturing a display device includes: forming an insulating layer on a substrate; forming an element layer on the insulating layer, the element layer including at least one electronic component and a dielectric layer disposed on the at least one electronic component The material of the insulating layer is polyethylene terephthalate, polyethylene naphthalate, polyether, polypropylene, vulcanized polypropylene, polycarbonate, polyetherimide, polyphenylene sulfide, Polyoxyxylene, polyfluorene, or polyphthalamide; forming a contact hole in the dielectric layer; forming an electrode on a surface of the element layer opposite to the insulating layer and in the contact hole, the An electrode is electrically connected to the at least one electronic component; a liquid crystal layer is formed between the electrode and a pair of opposite substrates; and the substrate is removed. 如請求項5所述之方法,更包含:配置一遮光元件於該絕緣層相對於該液晶層之一側。The method according to claim 5, further comprising: arranging a light shielding element on one side of the insulating layer opposite to the liquid crystal layer. 如請求項6所述之方法,更包含:配置一背光模組於該液晶層相對於該遮光元件的一側。The method according to claim 6, further comprising: arranging a backlight module on a side of the liquid crystal layer opposite to the light shielding element. 一種顯示裝置的製造方法,包含:形成一元件層於一絕緣層上,該元件層包含至少一電子元件及設置於該至少一電子元件上之一介電層,其中該絕緣層之材料為聚對苯二甲酸乙二酯、聚萘二甲酸乙二醇、聚醚、聚丙烯、硫化聚丙烯、聚碳酸酯、聚醚醯亞胺、聚苯硫醚、聚氧二甲苯、聚碸或聚鄰苯二甲醯胺;於該介電層上形成一接觸洞;形成一電極於該元件層相對於該絕緣層之一表面上以及該接觸洞內,該電極與該至少一電子元件電性連接;以及形成一液晶層於該電極與一對向基板之間;以及配置一遮光元件於該絕緣層相對於該液晶層之一側,其中形成該液晶層於該電極與該對向基板之間之步驟係包含:形成混合單體之液晶材料於該電極與該對向基板之間;以及由該對向基板遠離該電極之一側對該混合單體之液晶材料執行光處理,藉此讓該單體進行聚合反應以形成該液晶層,該液晶層之材料為聚合物網絡液晶、聚合物分散型液晶(Polymer Dispersed Liquid Crystal)或膽固醇液晶(Cholesteric Liquid Crystal)。A method for manufacturing a display device includes: forming an element layer on an insulating layer, the element layer including at least one electronic component and a dielectric layer disposed on the at least one electronic component, wherein a material of the insulating layer is poly Ethylene terephthalate, polyethylene naphthalate, polyether, polypropylene, sulfurized polypropylene, polycarbonate, polyetherimide, polyphenylene sulfide, polyoxyxylene, polyfluorene, or poly O-xylylenediamine; forming a contact hole in the dielectric layer; forming an electrode on a surface of the element layer opposite to the insulating layer and in the contact hole, the electrode and the at least one electronic component are electrically Connecting; and forming a liquid crystal layer between the electrode and a pair of opposing substrates; and disposing a light-shielding element on one side of the insulating layer opposite to the liquid crystal layer, wherein the liquid crystal layer is formed between the electrode and the opposing substrate The intermediate steps include: forming a liquid crystal material of a mixed monomer between the electrode and the opposite substrate; and performing a light treatment on the liquid crystal material of the mixed monomer from a side of the opposite substrate away from the electrode, whereby Let the monomer proceed Together to form the liquid crystal layer, the liquid crystal material is a layer of polymer network liquid crystal, polymer dispersed liquid crystal (Polymer Dispersed Liquid Crystal) or a cholesteric liquid crystal (Cholesteric Liquid Crystal).
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