TWI627421B - Leakage current detection apparatus and detection method thereof - Google Patents

Abstract

The leakage current detecting device and the detecting method thereof are used for detecting a leakage current generated when the circuit under test is in an idle state. The leakage current detecting device includes a capacitor, a precharge circuit, a discharge current generator, and a detection result generator. The precharge circuit provides a precharge current to precharge the capacitor during the first time interval. The discharge current generator generates a discharge current according to the leakage current when the circuit under test is in an idle state, and in the second time interval, and causes the capacitor to perform a discharge operation according to the discharge current. The detection result generator generates a leakage detection result according to the voltage value on the comparison detection detection end point and the voltage value of the preset reference voltage in the second time interval.

Description

Leakage current detecting device and detecting method thereof

The invention relates to a leakage current detecting device and a detecting method thereof, and particularly relates to a leakage current detecting device capable of detecting and reducing a leakage current when a circuit under test is in an idle state, and a detecting method thereof.

With the advancement of technology, the components of the Integrated Circuit (IC) have been miniaturized to the nanometer size, and the technicians are moving toward the design goal of lowering the threshold voltage of the transistor and its operating voltage. However, in order to achieve the above design requirements, the leakage current that may be generated by the electronic circuit is increased. In addition, when the electronic device operates in an operating state, it is susceptible to thermal energy generated inside the wafer or external ambient temperature, which may cause an unpredictable leakage current due to a change in temperature during operation of the electronic device. size. In addition to seriously affecting the working efficiency of the electronic circuit itself, this situation further reduces the yield when the wafer is produced and the performance of the electronic device. Therefore, how to effectively detect the leakage current of the circuit under test when the electronic device operates in the operating state and reduce the leakage current will be a subject of those skilled in the art.

The invention provides a leakage current detecting device and a detecting method capable of detecting and reducing leakage current in a circuit under test.

The leakage current detecting device of the present invention is used for detecting leakage current generated when the circuit under test is in an idle state, and includes a capacitor, a precharge circuit, a discharge current generator, and a detection result generator. The capacitor is coupled between the detection end point and the reference ground end. The pre-charging circuit is coupled to the detection terminal to provide a pre-charging flow to pre-charge the capacitor during the first time interval. The discharge current generator is coupled to the detection end point and the circuit under test. When the circuit under test is in an idle state and in a second time interval, a discharge current is generated according to the leakage current, and the capacitor performs a discharge operation according to the discharge current. The detection result generator is coupled to the capacitor, and in the second time interval, the leakage detection result is generated according to the voltage value on the comparison detection end point and the voltage value of the preset reference voltage. Wherein, the first time interval occurs before the second time interval.

The leakage detecting method of the leakage current detecting device of the present invention is configured to detect a leakage current generated when the circuit under test is in an idle state, wherein the leakage detecting method comprises: providing a precharge current to the capacitor in a first time interval Precharge action; when the circuit under test is in an idle state, and in a second time interval, a discharge current is generated according to the leakage current, and the capacitor performs a discharge operation according to the discharge current; and in the second time interval, the detection is performed on the end point according to the comparison The voltage value and the voltage value of the preset reference voltage generate a leakage detection result, wherein the first time interval occurs before the second time interval.

Based on the above, the leakage current detecting device of the present invention pre-charges the capacitor when the pre-charging circuit is in the first time interval, and discharges the capacitor when the discharging circuit generator is in the second time interval. action. The detection result generator generates a leakage detection result of the leakage current of the circuit under test according to comparing the discharge voltage value on the capacitor with the voltage value of the preset reference voltage in the second time interval. In this way, the working voltage generator can determine whether to reduce the operating voltage of the circuit under test according to the leakage detection result described above, so as to reduce the leakage current generated when the circuit under test is operated in an idle state.

The above described features and advantages of the invention will be apparent from the following description.

Referring to FIG. 1 , the leakage current detecting device 100 is configured to detect a leakage current IOFF generated when the circuit under test 110 is in an idle state, wherein the leakage current detecting device 100 includes a pre-charging circuit 120 and a discharging current generator 130. The result generator 140 and the capacitor C1 are detected. The circuit under test 110 receives the operating voltage VP as a power supply voltage and performs an operation. Wherein, when the circuit under test 110 is operated in an idle state (the circuit under test 110 is not operating and the substantial signal calculation and transfer operation does not occur in the circuit under test 110), the circuit under test 110 may be due to environmental temperature, process variation, and The leakage current IOFF of different magnitudes is generated by factors such as the voltage of the operating voltage VP.

In the present embodiment, the discharge current generator 130 is coupled to the circuit under test 110 and receives the leakage current IOFF generated by the circuit under test 110. The precharge circuit 120 is coupled to the discharge current generator 130 through the detection terminal NC. In addition, the capacitor C1 is coupled between the detection terminal NC and the reference ground GND. The detection result generator 140 receives the voltage on the detection endpoint NC to generate a leakage detection result VDR.

Regarding the details of the operation of the leakage current detecting device 100, when the leakage detecting device 100 operates in the first time interval, the pre-charging circuit 120 provides the pre-charging stream IC to pre-charge the capacitor C1 and causes the detection terminal NC to The voltage value rises to a preset voltage value. Then, in the second time interval after the first time interval, the discharge current generator 130 generates a discharge according to the leakage current IOFF of the circuit under test 100 when the circuit under test 100 operates in an idle state and in the second time interval. The current ID is caused to cause the capacitor C1 to perform a discharge operation in accordance with the discharge current ID. At this time, the voltage value at the detection terminal NC decreases as the capacitor C1 discharges. In the second time interval, the detection result generator 140 generates the leakage detection result VDR according to the voltage value on the comparison detection end NC and the voltage value of the preset reference voltage. Specifically, when the detection result generator 140 determines that the voltage on the detection terminal NC falls below a preset reference voltage in the second time interval, it indicates that the leakage current IOFF generated by the circuit under test 110 is too large. The measurement result generator 140 generates a leakage detection result VDR indicating that the leakage current IOFF is excessive. In contrast, if the detection result generator 140 does not determine that the voltage on the detection terminal NC is lower than the preset reference voltage in the second time interval, it indicates that the leakage current IOFF generated by the circuit under test 110 is not excessively large. The measurement result generator 140 generates a leakage detection result VDR indicating that the leakage current IOFF is not excessive. The first time interval is that the leakage current detecting device 100 has not started to detect the leakage current IOFF generated when the circuit under test 110 is in an idle state. In addition, the second time interval is that the leakage current detecting device 100 starts detecting the leakage current IOFF generated when the circuit under test 110 is in an idle state.

In this embodiment, the leakage detection result VDR can be a digital signal. Taking the leakage detection result VDR of one bit as an example, the detection result generator 140 can generate the leakage detection result VDR having the first logic level. The leakage current IOFF generated by the circuit under test 110 is excessively large, and the leakage detection result VDR having the second logic level is generated to indicate that the leakage current IOFF generated by the circuit under test 110 is not excessive, wherein the first logic level is Complementary to the second logic level.

On the other hand, in the embodiment, the circuit under test 110 can be disposed in a core circuit region of an integrated circuit. Therefore, the circuit under test 110 can be set by replicating a part of the core circuit in the integrated circuit. For example, the circuit under test 110 may be a combined logic circuit generated by any type of one or more logic gates, but is not limited thereto.

Referring to FIG. 2 below, the precharge circuit 220 in this embodiment includes a transistor M5. The first end of the transistor M5 is coupled to the charging voltage V1, the second end of the transistor M5 is coupled to the detecting terminal NC, and the control end of the transistor M5 is coupled to the pre-charging signal PRE. When the leakage detecting device 200 operates in the first time interval, the pre-charging circuit 220 turns on the transistor M5 through the pre-charging signal PRE, and the pre-charging circuit 220 generates the pre-charging stream IC to the capacitor C1 according to the received charging voltage V1. The precharge operation is performed, and the voltage value on the detection terminal NC is precharged to the voltage value of the charging voltage V1. Here, the voltage value of the charging voltage V1 may be equal to or not equal to the voltage value of the operating voltage VP.

On the other hand, in the present embodiment, the discharge current generator 230 can be a current mirror circuit 260 coupled between the path of the circuit under test 210 coupled to the reference ground GND. When the leakage detecting device 200 operates in the second time zone, the current mirror circuit 260 generates a discharge current ID according to the mirror leakage current IOFF. The current mirror circuit 260 includes a first transistor M1, a second transistor M2, a third transistor M3, and a fourth transistor M4. The first end of the first transistor M1 is coupled to the circuit under test 210 and the control terminal of the first transistor M1. The first end of the second transistor M2 is coupled to the second end of the first transistor M1, and the second end of the second transistor M2 is coupled to the reference ground GND. The first end of the third transistor M3 is coupled to the detection terminal NC, and the control end of the third transistor M3 is coupled to the control end of the first transistor M1. The first end of the fourth transistor M4 is coupled to the second end of the third transistor M3, the second end of the fourth transistor M4 is coupled to the reference ground GND, and the control end of the fourth transistor M4 is coupled to The control terminal of the second transistor M2.

Incidentally, the current mirror circuit 260 has a detection signal SEN. When the leakage detecting device 200 operates in the second time interval, the detecting signal SEN can turn on the second transistor M2 and the fourth transistor M4, and cause the current mirror circuit 260 to start operating. In this way, the current mirror circuit 260 can generate the discharge current ID through the mirror leakage current IOFF, and thereby cause the capacitor C1 to perform the discharge operation according to the discharge current ID. Conversely, in the non-second time interval (for example, in the first time interval), the detection signal SEN may turn off the second transistor M2 and the fourth transistor M4, and stop the current mirror of the current mirror circuit 260. Shooting action.

In another aspect, in the present embodiment, the detection result generator 240 can include a latch 270. The latch 270 includes a first inverter INV1, a second inverter INV2, and a sixth transistor M6. The first end of the sixth transistor M6 is coupled to the detection terminal NC, the second end of the sixth transistor M6 is coupled to the input end of the first inverter INV1, and the control end of the sixth transistor M6 is received. The signal EN is enabled and the sampling time point of the latch 270 is determined based on the enable signal EN. The output end of the first inverter INV1 is coupled to the input end of the second inverter INV2, and generates a leakage detection result VDR, and the output end of the second inverter INV2 is coupled to the first inverter INV1. Input.

Additionally, latch 270 provides a threshold voltage as a reference voltage, wherein the threshold voltage described above can be determined by process parameters of circuit components in latch 270. When the leakage detecting device 200 operates at the sampling time point in the second time interval, the sixth transistor M6 is turned on. In this way, the latch 270 can receive the voltage value on the detection terminal NC, and the latch 270 generates the leakage detection result according to whether the voltage value on the detection terminal NC is greater than the threshold voltage provided by the latch 270. VDR.

In the present embodiment, the threshold voltage of the latch 270 is determined by the process parameters of the circuit components in the latch 270 without requiring any additional reference voltage to be compared to the voltage value at the detection terminal NC. It features power saving, fewer circuit components and higher accuracy.

On the other hand, in the embodiment, the detection result generator 240 is further coupled to the working voltage generator 250. The operating voltage generator 250 receives the leakage detection result VDR. The working voltage generator 250 is configured to generate the operating voltage VP of the circuit under test 210. The operating voltage generator 250 can determine whether to decrease the voltage value of the operating voltage VP according to the received leakage detecting result VDR. It is worth mentioning that when the leakage detection result VDR indicates that the leakage current IOFF of the circuit under test 210 is too large, the operating voltage generator 250 can reduce the voltage value of the working voltage VP according to the leakage detection result VDR, thereby reducing the measured value. The circuit 210 operates a leakage current IOFF generated when it is in an idle state.

Specifically, when the leakage detection result VDR indicates that the leakage current IOFF of the circuit under test 210 is excessively large, the operating voltage generator 250 can reduce the operating voltage VP of the circuit under test 210 by an offset value according to the leakage detection result VDR. It should be noted that the leakage current detection mechanism of the embodiment of the present invention can be continuously performed. If the leakage detection result VDR still indicates that the leakage current IOFF of the circuit under test 210 is too large in the next leakage current detection period, the operating voltage generator 250 can further reduce the operating voltage of the circuit under test 210 according to the leakage detection result VDR. VP an offset value. The above offset value can be set by the designer according to the actual application condition of the integrated circuit, and there is no fixed limit.

Referring to FIG. 2 and FIG. 3 simultaneously, when the leakage current detecting device 200 operates in the first time interval T11, the pre-charging circuit 220 turns on the transistor M5 through the pre-charging signal PRE, and the pre-charging circuit 220 is based on the received The charging voltage V1 precharges the capacitor C1 by generating the precharge current IC, and causes the voltage value on the detection terminal NC to be precharged to the voltage value of the charging voltage V1. Incidentally, in the first time interval T11, since the leakage current detecting device 200 has not started the operation of detecting the leakage current IOFF of the circuit under test 210, the detection signal SEN of the current mirror circuit 260 and the latch The enable signal EN of 270 is not enabled.

In contrast, when the leakage current detecting device 200 operates in the second time interval T21, the circuit under test 210 operates in an idle state and generates a leakage current IOFF, and the pre-charging circuit 220 is based on the pre-charging signal PRE (disabled). The second time interval T21 stops the execution of the precharge operation. Next, the current mirror circuit 260 turns on the second transistor M2 and the fourth transistor M4 through the detection signal SEN, and causes the current mirror circuit 260 to start operating. In this way, the current mirror circuit 260 can generate the discharge current ID according to the leakage current IOFF, and thereby cause the capacitor C1 to perform the discharge operation according to the discharge current ID. Therefore, the detection terminal NC performs a discharge operation with the capacitor C1, so that the voltage value of the detection terminal NC starts to decrease. In addition, in the second time interval T21, the latch 270 performs a latching action in accordance with the enabled enable signal EN to receive and latch the voltage value on the detection terminal NC. The latch 270 determines whether the voltage value on the detection terminal NC is smaller than the threshold voltage VT of the latch 220 according to the voltage value on the detection terminal NC to generate the leakage detection result VDR.

It should be noted that when the operating voltage generator 250 determines that the voltage value on the detecting terminal NC falls below the threshold voltage VT of the latch 220 according to the leakage detecting result VDR, the operating voltage generator 250 provides the corresponding voltage drop to the receiving voltage. The operating voltage VP of the circuit 210 is measured. At the same time, the operating current voltage VP is lowered to reduce the leakage current IOFF when the circuit under test 210 operates in an idle state. Please note that in the present embodiment, the leakage current detecting action of the leakage current detecting device 200 can be continuously performed, and the next leakage current detection is performed in the succeeding first time interval T12 and the second time interval T22. Measuring action. If the leakage current IOFF is still detected excessively in the second time interval T22, the voltage value of the operating voltage VP can be further lowered.

Referring to FIG. 4A below, the current detecting device 400 includes a precharge circuit 420, a discharge current generator 430, a detection result generator 440, an operating voltage generator 450, a current mirror circuit 460, and a comparator 470. Unlike the latch 270 of FIG. 2, the present embodiment utilizes the comparator 470 to implement the power of the detection result generator 440. The first end of the comparator 470 is coupled to the detection terminal NC to receive the voltage value on the detection terminal NC, and the second end of the comparator 470 is coupled to the reference voltage VR1. In addition, the comparator 470 is The voltage value on the endpoint NC is compared with the reference voltage VR1 to generate a detection result VDR1. In detail, when the comparator 470 compares the voltage value on the detection terminal NC to be smaller than the reference voltage VR1, it indicates that the leakage current IOFF of the circuit under test 410 is greater than the first threshold value, and at the same time, the comparator 470 is based on the detection terminal NC. The voltage value is compared with the reference voltage VR1 to generate a leakage detection result VDR1. In this embodiment, the output of the comparator 470 is further coupled to the operating voltage generator 450 to cause the operating voltage generator 450 to receive the leakage detection result VDR1. When the leakage detection result VDR1 indicates that the leakage current IOFF of the circuit under test 410 is excessively large, the operating voltage generator 450 can reduce the operating voltage VP of the circuit under test 410 by an offset value according to the leakage detection result VDR1, thereby reducing The leakage current IOFF generated when the circuit under test 410 operates in an idle state.

Referring to FIG. 4A and FIG. 4B simultaneously, different from the single comparator 470 of FIG. 4A, in the embodiment, the plurality of comparators 610 to 6N0 can be used to generate the detection result 440. In the following, the two comparators 610 are used. 6N0 is taken as an example. The first end of the comparator 610 is coupled to the reference voltage VR1, and the second end of the comparator 610 is coupled to the detection terminal NC to receive the voltage value on the detection terminal NC. The first end of the comparator 6N0 is coupled to the second end of the comparator 610, and the second end of the comparator 6N0 is coupled to the reference voltage VR2, wherein the voltage value of the reference voltage VR1 is, for example, greater than the voltage value of the reference voltage VR2. It is worth mentioning that, in this embodiment, the output ends of the comparator 610 and the comparator 6N0 are coupled to the input end of the logic operation circuit 480, so that the logic operation circuit 480 receives the output result generated by the comparator 610 to the comparator 6N0. . The logic operation circuit 480 can generate the leakage detection result VDR2 according to the output results of the comparator 610 and the comparator 6N0. The logic operation circuit 480 can be a combined logic circuit generated by any type of one or more logic gates, but is not limited thereto. In addition, the output of the logic operation circuit 480 is further coupled to the operating voltage generator 450 to cause the operating voltage generator 450 to adjust the voltage value of the operating voltage VP according to the leakage detection result VDR2.

In detail, when the voltage value on the detection terminal NC is less than the reference voltage VR1 and the voltage value on the detection terminal NC is greater than the reference voltage VR2, the leakage detection result VDR2 indicates that the leakage current IOFF of the circuit under test 410 is greater than a first The threshold value and the operating voltage generator 450 can reduce the operating voltage VP of the circuit under test 410 by a first offset value according to the leakage detection result VDR2. On the other hand, when the voltage value on the detection terminal NC is smaller than the reference voltage VR1 and the voltage value on the detection terminal NC is smaller than the reference voltage VR2, the leakage detection result VDR2 indicates that the leakage current IOFF of the circuit under test 410 is greater than a second. The threshold value is generated, and the operating voltage generator 450 can reduce the operating voltage VP of the circuit under test 410 by a second offset value according to the leakage detection result VDR2, thereby reducing leakage generated when the circuit under test 410 operates in an idle state. Current IOFF, wherein the second offset value is greater than the first offset value.

In contrast, when the logic operation circuit 480 does not determine that the voltage on the detection terminal NC is less than the reference voltages VR1 and VR2 in the second time interval, it indicates that the leakage current IOFF generated by the circuit under test 410 is not excessively large, and the logic operation circuit 480 generates Indicates that the leakage current IOFF does not have an excessive leakage detection result VDR2.

Referring to FIG. 5, step S510 causes the circuit under test to receive the operating voltage and operate the circuit under test in an idle state, wherein the circuit under test generates a leakage current in an idle state. Step S520 provides a precharge current to precharge the capacitor in the first time interval. Then, in step S530, a discharge current is generated according to the leakage current in the second time interval, and the capacitor performs a discharge operation according to the discharge current. Moreover, in step S540, a leakage detection result is generated according to the voltage value on the comparison detection detection end point and the voltage value of the preset reference voltage in the second time interval.

The implementation details of the above various steps are described in detail in the foregoing various embodiments and embodiments, and will not be further described below.

According to the foregoing various embodiments and implementations, it can be seen that the leakage current of the integrated circuit can be effectively monitored and further reduced by the leakage current detecting mechanism of the embodiment of the present invention. In addition, the integrated circuit is susceptible to thermal energy generated inside the wafer or external ambient temperature, resulting in unpredictable leakage current due to temperature changes. Therefore, according to the leakage current detecting mechanism of the embodiment of the present invention, even if the internal temperature and/or the ambient temperature of the integrated circuit are increased, the magnitude of the leakage current generated by the integrated circuit can be effectively suppressed and reduced. Leakage current that may be generated.

In summary, the present invention compares the discharge voltage value of the load capacitance due to the leakage current of the circuit under test and the preset reference voltage in the detection result generator by the detection result generator in the leakage current detecting device. To generate leakage current detection results of leakage current. If the operating voltage generator determines that the leakage current is greater than a threshold according to the leakage detection result, the operating voltage generator reduces the operating voltage of the circuit under test to reduce the leakage current generated when the circuit under test is operated in an idle state. .

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100, 200, 400‧‧‧ leakage current detecting device
110, 210, 410‧‧‧Measured circuits
120, 220, 420‧‧‧ precharge circuit
130, 230, 430‧‧‧ discharge current generator
140, 240, 440‧‧‧Detection result generator
250, 450‧‧‧ working voltage generator
260, 460‧‧‧ current mirror circuit
270‧‧‧Latch
470, 610-6N0‧‧‧ comparator
480‧‧‧Logical Operation Circuit
M1-M6‧‧‧O crystal
INV1, INV2‧‧‧ inverter
C1‧‧‧ capacitor
NC‧‧‧Detection endpoint
SEN‧‧‧Detection signal
EN‧‧‧Enable signal
PRE‧‧‧Precharge signal
VP‧‧‧ working voltage
V1‧‧‧Charging voltage
VR1, VR2‧‧‧ reference voltage
VT‧‧‧ threshold voltage
IOFF‧‧‧ leakage current
IC‧‧‧Precharge current
ID‧‧‧discharge current
GND‧‧‧reference ground
T11, T12‧‧‧ first time interval
T21, T22‧‧‧ second time interval
VDR, VDR1, VDR2‧‧‧ leakage detection results
S510-S540‧‧‧Detection steps of leakage current detecting device

1 is a block diagram showing a leakage current detecting device according to an embodiment of the invention. 2 is a circuit diagram showing a leakage current detecting device according to an embodiment of the invention. FIG. 3 is a schematic diagram showing the operation waveforms of a leakage current detecting device according to an embodiment of the invention. 4A is a circuit diagram showing a leakage current detecting device according to another embodiment of the present invention. FIG. 4B is a schematic circuit diagram of the detection result generator of FIG. 4A according to another embodiment of the present invention. FIG. 5 is a flow chart illustrating a method for detecting a leakage current detecting device according to an embodiment of the invention.

Claims (14)

A leakage current detecting device for detecting a leakage current generated by a circuit under test in an idle state, comprising: a capacitor coupled between a detection end and a reference ground; a precharge circuit, And being coupled to the detection end point, providing a precharge current to precharge the capacitor in a first time interval; a discharge current generator coupled to the detection end point and the circuit under test, The circuit is in the idle state, and in a second time interval, generates a discharge current according to the leakage current, and causes the capacitor to perform a discharge operation according to the discharge current; and a detection result generator coupled to the capacitor In the second time interval, a leakage detection result is generated according to comparing the voltage value on the detection end point with a preset voltage value of a reference voltage, wherein the first time interval occurs before the second time interval. The leakage current detecting device of claim 1, wherein the detection result generator comprises: a latch that provides a threshold voltage as the reference voltage and according to the uniform energy signal in the second A sampling time point in the time interval is determined according to whether the voltage value on the detection end point is less than the threshold voltage to generate the leakage detection result. The leakage current detecting device of claim 1, wherein the detection result generator comprises: a comparator for generating the leakage detection according to whether the voltage value on the detection end point is smaller than the reference voltage result. The leakage current detecting device of claim 1, further comprising: an operating voltage generator for generating an operating voltage, wherein the operating voltage generator receives the leakage detecting result, and according to the leakage The detection result determines whether to decrease the voltage value of the working voltage. When the leakage detection result indicates that the leakage current is greater than a threshold, the operating voltage generator reduces the operating voltage by an offset value. The leakage current detecting device of claim 4, wherein when the leakage detecting result indicates that the leakage current is greater than a first threshold, the operating voltage generator reduces the operating voltage by a first offset a value, when the leakage detection result indicates that the leakage current is greater than a second threshold, the operating voltage generator reduces the operating voltage by a second offset value, wherein the first threshold is less than the second threshold The first offset value is less than the second offset value. The leakage current detecting device of claim 1, wherein the discharge current generator comprises: a current mirror circuit coupled between the path of the circuit under test coupled to the reference ground, the current mirror circuit In the second time interval, the leakage current is mirrored to generate the discharge current. The leakage current detecting device of claim 6, wherein the current mirror circuit comprises: a first transistor having a first end coupled to the circuit under test and a control end of the first transistor; a second transistor having a first end coupled to the second end of the first transistor, a second end of the second transistor coupled to the reference ground; a third transistor having a first end The control end of the third transistor is coupled to the control end of the first transistor; and the fourth transistor is coupled to the second end of the third transistor The second end of the fourth transistor is coupled to the reference ground, and the control end of the fourth transistor is coupled to the control end of the second transistor. The leakage current detecting device of claim 1, wherein the precharging circuit comprises: a transistor, the first end of which is coupled to a charging voltage, and the second end of the transistor is coupled to the detecting The terminal end of the transistor is coupled to a precharge signal. The leakage current detecting device of claim 1, wherein the circuit under test is disposed in a core circuit region of the integrated circuit. A leakage detecting method for detecting a leakage current generated when a circuit under test is in an idle state, comprising: providing a pre-charging stream to pre-charge a capacitor in a first time interval; In the idle state, and in a second time interval, a discharge current is generated according to the leakage current, and the capacitor performs a discharge operation according to the discharge current; and the detection end point is compared according to the second time interval. The voltage value on the voltage and the preset voltage value of a reference voltage generate a leakage detection result, wherein the first time interval occurs before the second time interval. The leakage detection method according to claim 10, further comprising: determining, according to the leakage detection result, whether to decrease a voltage value of a working voltage, when the leakage detection result indicates that the leakage current is greater than a critical value When the voltage is adjusted, the offset value is adjusted. The leakage detecting method of claim 11, wherein the step of determining whether to lower the voltage value of the working voltage according to the leakage detecting result comprises: when the leakage detecting result indicates that the leakage current is greater than one When the threshold value is decreased, the operating voltage is decreased by a first offset value; and when the leakage detection result indicates that the leakage current is greater than a second threshold, the operating voltage is adjusted to a second offset value, where The first threshold is less than the second threshold, and the first offset is less than the second offset. The leakage detection method of claim 10, wherein the leakage detection result is generated according to comparing a voltage value on the detection end point with a preset voltage value of the reference voltage in the second time interval. The step of: providing a threshold voltage as the reference voltage, and determining whether the voltage value on the detection end point is less than the threshold voltage according to a sampling time point of the uniform energy signal in the second time interval to generate the Leakage detection results. The leakage detection method of claim 10, wherein the leakage detection result is generated according to comparing a voltage value on the detection end point with a preset voltage value of the reference voltage in the second time interval. The step of: comprising: comparing whether the voltage value on the detection endpoint is less than the reference voltage to generate the leakage detection result.