TWI627306B - 用於選擇性金屬化的屏蔽塗層 - Google Patents

用於選擇性金屬化的屏蔽塗層 Download PDF

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TWI627306B
TWI627306B TW106129602A TW106129602A TWI627306B TW I627306 B TWI627306 B TW I627306B TW 106129602 A TW106129602 A TW 106129602A TW 106129602 A TW106129602 A TW 106129602A TW I627306 B TWI627306 B TW I627306B
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Taiwan
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alkyl
branched
item
formula
polymer substrate
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TW106129602A
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TW201812093A (zh
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Hung Tat Chan
陳鴻達
Ka Ming Yip
葉家明
Chit Yiu Chan
陳喆垚
Kwok Wai Yee
余國偉
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Rohm And Haas Electronic Materials Llc
羅門哈斯電子材料有限公司
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    • C08J7/04—Coating
    • C08J7/0427—Coating with only one layer of a composition containing a polymer binder
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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Abstract

將屏蔽塗層施用至聚合物基板以用於基板的選擇性金屬化。屏蔽塗層包含底塗劑成分及疏水性頂塗層。首先將底塗劑施用至聚合物基板，隨後施用頂塗層成分。隨後選擇性蝕刻屏蔽塗層以形成所需當前圖案的輪廓。將催化劑施用至經圖案化的聚合物基板，隨後在經蝕刻的部分進行無電金屬鍍覆。含有屏蔽塗層的聚合物基板部分抑制無電金屬鍍覆。底塗劑含有聚胺且頂塗層含有疏水性烷基有機化合物。

Description

用於選擇性金屬化的屏蔽塗層
本發明涉及用於與模製互連裝置相關的聚合物基板的選擇性金屬化的屏蔽塗層。更確切而言，本發明涉及用於模製互連裝置的聚合物基板的選擇性金屬化的屏蔽塗層，其中屏蔽塗層充當後續催化劑及無電金屬鍍覆的阻擋層。
雷射直接成型製程(LDS)已經研發且用於所謂模製互連裝置(MID)的模製塑膠材料的選擇性鍍覆超過10年。利用LDS有可能在複雜3維基板上獲得高度功能性電路佈局。所述製程的基礎涉及摻雜添加劑的熱塑性材料或熱固性材料與無機填充劑，其允許藉助於雷射活化形成電路跡線，隨後使用無電鍍覆金屬化。併入在此類塑膠中的含有金屬的添加劑是利用雷射束活化且變得有活性，從而作為催化劑用於在有待鍍覆的塑膠表面的經處理區域上無電鍍銅。除活化以外，雷射處理可產生顯微級粗糙表面，使得銅在金屬化期間牢固地錨定於此。然而，此類技術侷限於應用在摻雜添加劑的塑膠上，而未摻雜添加劑的一般類型的工程塑膠無法被活化用於無電鍍銅。
在使用中的另一種技術是連同LDS一起的專用塗法。其是利用首先在塑膠部件上噴塗薄層塗料來進行。LDS 製程隨後在塗料塗層上形成電路佈局且同時活化電路上的塗料。塑膠將接著經受無電鍍銅用於金屬化。此方法可在無添加劑摻雜的情況下擴展至塑膠。然而，其仍處於原型階段且尚未準備用於大量生產。
雷射重構印刷(LRP)是用於MID應用的另一種創新技術。LRP採用高精度印刷在工件上產生導電圖(銀漿料)以形成電路佈局。隨後雷射修整經印刷的工件。在工件上產生高精度電路結構。此技術涉及對高成本3D打印機的較高啟動投資。
另一種技術是半加成製程(SAP)。第一步是採用現有膠態催化劑及用於在印刷電路板上金屬化的無電銅而在塑膠基板上鍍覆無電銅薄層。在塑膠基板上塗佈一層電沈積的負型光阻。在曝光及顯影後，暴露未覆蓋光阻的電路圖案。經暴露的電路可鍍銅以達到所需厚度且隨後鍍鎳。去除剩餘光阻。利用微蝕刻去除過量銅層。此技術的一種優勢在於能夠將較低成本的電解電鍍製程代替常用無電鍍覆製程應用於完全銅構築及鎳。塑膠基板已完全鍍有一層無電銅。此技術亦可應用於未摻雜添加劑的塑膠。然而，由於其不涉及使用雷射使電路粗糙化，所以鍍覆附著性是一個問題。另外，所述製程順序相當長且複雜，涉及額外光阻製程。
雖然存在與聚合物及塑膠材料的選擇性金屬化相關的多種製程，但是仍需要聚合物及塑膠(具體而言，MID)的選擇性金屬化的改進方法。
聚合物基板的金屬化方法包含：提供聚合物基 板；將包含聚胺化合物的底塗劑施用於聚合物基板以在聚合物基板上提供親水性塗層；直接鄰近底塗劑施用疏水性頂塗層以在基板上形成屏蔽塗層，疏水性頂塗層包含一或多種選自烷基醇烷氧基化物、烷基硫醇、非聚合物烷基一級胺及非聚合物烷基二級胺的化合物；選擇性蝕刻屏蔽塗層以暴露部分聚合物基板；將催化劑提供於包含屏蔽塗層的聚合物基板；以及選擇性無電金屬鍍覆聚合物基板。
屏蔽塗層可利用其排斥水基催化劑的疏水性特徵抑制催化劑吸附在塑膠基板上或可鈍化所吸附的催化劑。另外，屏蔽塗層可抑制背景鍍覆及過度鍍覆。離子催化劑及膠態催化劑均可使用。具有及沒有嵌埋式催化劑的聚合物可與本發明一起使用。本發明的方法可用於在3-D聚合物基板上形成電路。
圖1為說明本發明實施例的示意圖。
除非上下文另外明確指示，否則如本說明書通篇所使用，下文給出的縮寫具有以下含義：g=公克；mg=毫克；mL=毫升；L=公升；cm=公分；m=公尺；mm=毫米；μm=微米；ppm=百萬分率；mg/L=毫克/公升；M=莫耳濃度；℃=攝氏度；RT=室溫；g/L=公克/公升；DI=去離子；MID=模製互連裝置；3-D=三(3)維；Pd=鈀；Nd：YAG=摻雜釹的釔鋁石榴石；EO=氧化乙烯；PO=氧化丙烯；PO-b-EO=氧化丙烯/氧化乙烯嵌段共聚物；Mn=數 目平均分子量；wt%=重量百分比；ABS=丙烯腈-丁二烯-苯乙烯共聚物；White ABS=白色ABS；PC=聚碳酸酯聚合物；Black PC=黑色PC；GF=玻璃纖維；以及Tg=玻璃轉化溫度。
術語模製互連裝置或MID意思指具有積體電子電路跡線的注射模製熱塑性部件，其通常具有3-D形狀或形式。術語「背景鍍覆」意思指在不意欲沈積金屬的聚合物或塑膠表面上的隨機金屬沈積。術語「過度鍍覆」意思指在所需電路圖案以外的金屬鍍覆及不能控制金屬鍍覆。術語「單體(monomer或monomeric)」意思指可與一或多個相同或類似的分子組合的單個分子。術語「寡聚物」意思指組合形成單個分子的兩個或三個單體。術語「聚合物」意思指組合形成單個分子的兩個或更多個單體或兩個或更多個寡聚物。術語「聚合物」包含共聚物。術語「鄰近」意思指兩個不同表面彼此接觸形成共同介面的鄰接。術語「印刷電路板」及「印刷線路板」在本說明書通篇可互換使用。術語「鍍覆」及「沈積」在本說明書通篇可互換使用。除非另外指出，否則所有量均為重量百分比。所有數值範圍均包含端點在內且可按任何次序組合，但邏輯上此類數值範圍被限制於總計共100%。
本發明的屏蔽塗層包含底塗劑組合物，其包含一或多種聚胺且直接鄰近施用於基板的聚合物或塑膠材料的表面以在聚合物或塑膠材料上提供基本上親水性塗層，隨後除了視情況選用的沖洗步驟之外無任何中間步驟，直接鄰近於底塗劑組合物施用疏水性頂塗層以形成直接鄰近於基板的聚合物材料的屏蔽塗層，所述頂塗層包含烷基醇烷氧基化物、 烷基硫醇、非聚合物烷基一級胺及非聚合物烷基二級胺中之一或多者。因此，屏蔽塗層包含底塗劑，其包含聚胺，可利用凡得瓦爾力(Van der Waals force)結合於聚合物；及頂塗層，其包含烷基醇烷氧基化物、烷基硫醇、非聚合物烷基一級胺及非聚合物烷基二級胺中之一或多者。雖然不受理論束縛，但是咸信，疏水性頂塗層中所包含的化合物的親水性部分與親水性底塗劑相互作用或互混且頂塗層化合物的疏水性部分相反於或遠離基板的聚合物材料延伸以形成基本上疏水性頂表面，由此在聚合物基板上形成屏蔽塗層。圖1說明本發明的四個基本步驟。
據設想，在形成本發明的屏蔽塗層時可形成底塗劑的任何聚胺可用於實踐本發明。本發明的聚胺是以0.5g/L至20g/L、較佳1g/L至15g/L、更佳1g/L至10g/L的量包含在內。較佳地，聚胺選自聚伸烷基聚胺以及直鏈及分支鏈聚伸烷基亞胺(PAI)。
較佳的聚伸烷基聚胺具有以下通式：
其中R1、R2、R3、R4及R5獨立地選自氫及直鏈或分支鏈(C1-C4)烷基，其中a是2至6且b是2至6。較佳地，R1、R2、R3、R4及R5獨立地選自氫及(C1-C2)烷基，a是2至6且b是2至6。更佳地，R1及R2是氫且R3、R4及R5選自氫及甲基，a是2至3且b是2至6。最佳地，R1、R2、R3、R4及R5是氫，a是2且b是2至6。具有式(I)的示例性聚伸烷 基聚胺是二伸乙基三胺、三伸乙基四胺、四伸乙基五胺、五伸乙基六胺及六伸乙基七胺。
本發明的較佳聚伸烷基亞胺(PAI)具有以下通式：H-(CH2-(CH2) d -NH-) e -H(II)
其中d及e是相同或不同的且至少是1。較佳地，d是1至4且e是大於25的值。更佳地，e大於250且最佳地，e大於2500。最佳的分子量(Mn)是800及更大，更佳1500及更大且最佳2500及更大。
更佳的聚伸烷基亞胺(PAI)是聚伸乙基亞胺(PEI)。此類PEI被認為具有以下通式，但在行業內並未確認：-(NHCH2CH2-) f [-N(CH2CH2NH2)CH2CH2-] g (III)
其中f是1至120,000、較佳2至60,000、更佳3至24,000且g是1至60,000、較佳2至30,000、更佳3至12,000。式(III)的示例性聚伸乙基亞胺是PEI-3、PEI-7、PEI-15、PEI-30、PEI-45、PEI-100、PEI-300、PEI-500、PEI-600、PEI-700、PEI-800、PEI-1000、PEI-1500、PEI-1800、PEI-2000、PEI-70,000、PEI-500,000及PEI-5,000,000，其中整數是指聚合物的分子量。如此命名的PEI可自Aldrich購得。
本發明的聚伸乙基亞胺(PEI)亦包含分支鏈質子化聚伸乙基亞胺(PEI鹽)。在分支鏈質子化聚伸乙基亞胺(PEI鹽)中，每個質子化氮中心的抗衡離子與在中和期間獲得的酸的陰離子平衡。分支鏈質子化聚伸乙基亞胺的實例是PEI-鹽酸鹽、PEI-硫酸鹽、PEI-硝酸鹽、PEI-乙酸鹽及PEI-脂肪酸鹽。
視情況，底塗劑組合物可包含一或多種金屬離子以輔助底塗劑與頂塗層化合物混合。此類金屬離子包含(但不限於)銅離子、鎳離子、錳離子及鋅離子。此類離子是利用其水溶性鹽添加至底塗劑組合物中。銅鹽包含(但不限於)硫酸銅、硝酸銅、氯化銅及乙酸銅。鎳鹽包含(但不限於)氯化鎳、硫酸鎳及胺基磺酸鎳。錳鹽包含(但不限於)硫酸錳。鋅鹽包含(但不限於)硝酸鋅。此類鹽是以0.5g/L至15g/L、較佳1g/L至10g/L的量包含在底塗劑中。較佳地，所選金屬離子是銅及鎳。更佳地，所選離子是銅離子。一般而言，底塗劑溶液中較佳包含一或多種金屬離子；然而，可進行少量實驗以測定所述一或多種金屬離子是否改善頂塗層化合物吸附於特定聚合物材料。
底塗劑可利用將組分按任何次序混合於水中製備。底塗劑的pH值範圍可較佳介於7至13、更佳介於8至12。
在將底塗劑施用於聚合物材料之前，較佳清潔聚合物材料以自聚合物表面去除任何表面油及殘餘物。圖1在步驟1示出了經清潔的基板。可使用所屬領域中已知的習知清潔組合物及方法。清潔通常是在室溫下在清潔溶液中，如10% CUPOSITTM Z清潔配製品(可自馬薩諸塞州馬波羅的陶氏先進材料(Dow Advanced Materials,Marlborough,MA)購得)，使用超音波來進行。
可利用將含有聚合物材料的基板浸沒在底塗劑中而直接鄰近聚合物材料施用底塗劑，或其可直接鄰近於聚合物材料噴塗。底塗劑較佳在室溫至80℃、更佳30℃至50 ℃的溫度下施用。在聚合物材料與頂塗層接觸之前的停留時間介於較佳1分鐘至10分鐘、更佳3分鐘至8分鐘範圍內。
在將底塗劑施用於基板的聚合物材料之後，在除視情況選用的水沖洗步驟以外在本發明的方法中無任何中間步驟的情況下，將頂塗層直接鄰近於底塗劑施用於聚合物材料上。頂塗層是利用將聚合物材料浸沒在頂塗層溶液中或利用直接鄰近塗佈聚合物材料的底塗劑噴塗頂塗層而直接鄰近於底塗劑施用。頂塗層較佳在室溫至80℃、更佳30℃至50℃的溫度下施用。頂塗層施用的停留時間介於較佳1分鐘至10分鐘、更佳3分鐘至8分鐘範圍內。在將頂塗層施用於底塗劑之後，使頂塗層在底塗劑上乾燥以形成直接鄰近於基板中的聚合物材料的屏蔽塗層。圖1說明鄰近聚合物基板的屏蔽塗層。視情況，頂塗層可利用在室溫下吹乾而乾燥。
頂塗層選自烷基醇烷氧基化物、烷基硫醇及非聚合物一級胺及非聚合物二級胺。其可以0.5g/L至100g/L、較佳1g/L至30g/L的量包含在內。烷基醇烷氧基化物包含(但不限於)具有下式的聚乙氧基化醇聚合物：CH3(CH2) m -(O-CH2-CH2) n -OH(IV)
其中m是7至25；且n表示1至25的平均乙氧基化程度。較佳地，n是7至15且m較佳地是13至25。烷基醇烷氧基化物亦包含具有下式的脂族乙氧基化/丙氧基化共聚物：R-O-(CH2CH2O) x -(CH2CH2CH2O) y -H(V)或R-O-(CH2CH2O) x -(CH2CH(CH3)O) y -H(VI)
其中R是具有8至22個碳原子的直鏈或分支鏈烷基或異十三基，且x及y獨立地選自1至20。烷基醇烷氧基化物亦 包含具有下式的丙氧基化/乙氧基化共聚物：R-O-(CH2CH(CH3)O) x -(CH2CH2O) y -H(VII)或R-O-(CH2CH2CH2O) x -(CH2CH2O) y -H(VIII)
其中R以及x及y如上文所定義。
烷基硫醇包含(但不限於)具有下式的硫醇：R6-SH(IX)
其中R6是具有1至24個碳原子、較佳16至21個碳原子的直鏈或分支鏈烷基；具有5至14個碳原子的芳基；及烷芳基，其中烷芳基的烷基是具有1至24個碳原子的直鏈或分支鏈且芳基具有5至14個碳原子。示例性烷基硫醇是乙硫醇、1-丙硫醇、2-丙硫醇、1-丁硫醇、2-丁硫醇、2-甲基-1-丙硫醇、2-甲基-2-丙硫醇、2-甲基-1-丁硫醇、1-戊硫醇、2,2-二甲基-1-丙硫醇、1-己硫醇、1,6-己硫醇、1-庚硫醇、2-乙基己硫醇、1-辛硫醇、1,8-辛硫醇、1-壬硫醇、1,9-壬硫醇、1-癸硫醇、1-十一硫醇、1-十二硫醇、1-十三硫醇、1-十四硫醇、1-十五硫醇、1-十六硫醇、1-十七硫醇、1-十八硫醇、1-十九硫醇及1-二十硫醇。較佳的示例性烷基硫醇是1-十六硫醇、1-十七硫醇、1-十八硫醇、1-十九硫醇及1-二十硫醇。
非聚合物一級胺及非聚合物二級胺包含(但不限於)具有下式的胺化合物：R7-CH2-NH2(X)或R8-CH2-NH-CH2-R9(XI)
其中R7、R8及R9獨立地選自氫、經取代或未經取代的直鏈或分支鏈(C1-C24)烷基、經取代或未經取代的直鏈或分支鏈(C2-C20)烯基、經取代或未經取代的(C3-C8)環烷基及經取代或 未經取代的(C6-C10)芳基，其中取代基包含(但不限於)羥基、羥基(C1-C20)烷基、胺基、(C1-C20)烷氧基、鹵素(如氟、氯及溴)、巰基及苯基。較佳地，胺化合物是非聚合物一級胺，其中R7是經取代或未經取代的直鏈或分支鏈(C1-C21)烷基，更佳地，胺化合物是非聚合物一級胺，其中R7是未經取代的直鏈或分支鏈(C1-C21)烷基。
示例性一級胺包含胺基乙烷、1-胺基丙烷、2-胺基丙烷、1-胺基丁烷、2-胺基丁烷、1-胺基-2-甲基胺基戊烷、2-胺基-2-甲基丙烷、1-胺基戊烷、2-胺基戊烷、3-胺基戊烷、新戊胺、1-胺基己烷、1-胺基庚烷、2-胺基庚烷、1-胺基辛烷、2-胺基辛烷、1-胺基壬烷、1-胺基癸烷、1-胺基十二烷、1-胺基十三烷、1-胺基十四烷、1-胺基十五烷、1-胺基十六烷、1-胺基十七烷及1-胺基十八烷。較佳地，示例性一級胺包含1-胺基十六烷、1-胺基十七烷及1-胺基十八烷。
視情況，頂塗層可包含一或多種有機溶劑以幫助溶解有機化合物。有機溶劑是以足以溶解疏水性頂塗層化合物的量包含在內。較佳地，一或多種有機溶劑是以0-60體積%、較佳10體積%至50體積%的量包含在內。此類有機溶劑包含醇、二醇、三醇及更高級多元醇。合適的醇包含乙醇、丙醇、異丙醇、正丁醇、異丁醇、第三丁醇、乙二醇、丙-1,2-二醇、丁-1,2-二醇、丁-1,3-二醇、丁-1,4-二醇、丙-1,3-二醇、己-1,4-二醇、己-1,5-二醇、己-1,6-二醇、2-甲氧基乙醇、2-乙氧基乙醇、2-丙氧基乙醇及2-丁氧基乙醇。亦包含不飽和二醇，如丁烷-二醇、己烷-二醇及炔屬物質，如丁炔二醇。合適的三醇是丙三醇。額外醇包含三乙二醇、二乙二醇、二乙 二醇甲醚、三乙二醇單甲醚、三乙二醇二甲醚、丙二醇、二丙二醇、烯丙醇、呋喃甲醇、四氫呋喃甲醇及聚乙烯與聚乙二醇的嵌段聚合物。
在基板的聚合物材料上形成屏蔽塗層之後，選擇性蝕刻屏蔽塗層以形成電路圖案。圖案可利用在塑膠上鍍覆行業中已知的習知方法來蝕刻，如(但不限於)雷射蝕刻、砂紙蝕刻及電漿蝕刻。較佳地，屏蔽塗層是用雷射選擇性蝕刻，如可自LPKF Laser & Electronics AG購得的Nd：YAG,1064nm LPKF雷射器。雷射蝕刻能夠形成細線電路的細線圖案，因為雷射可調節至極細尺寸。此進一步能夠使得電路小型化及3-D電子製品小型化。典型道寬大於或等於150μm且間距或間隙大於或等於200μm。進行蝕刻以向下去除屏蔽塗層直至聚合物材料且使聚合物表面粗糙化，如圖1步驟3中所示。若聚合物材料具有嵌埋式催化劑，則去除表面足夠的聚合物材料以暴露催化劑用於無電金屬鍍覆。若聚合物材料不包含嵌埋式催化劑，則可將習知離子催化劑或膠態催化劑施用於聚合物用於無電金屬鍍覆，如圖1步驟4中所示。離子或膠態催化劑可利用習知方式，如利用浸漬或噴塗催化劑而施用在經蝕刻基板上。可使用習知催化劑參數(如催化劑溶液的溫度、pH值及停留時間)來實踐本發明。視催化劑類型而定，在無電金屬化之前可使用習知後處理活化催化劑。離子催化劑較佳地包含催化性離子，如銀離子及鈀離子。絡合劑通常與金屬離子一起被包含以在催化之前穩定金屬離子。膠態催化劑較佳地是習知錫/鈀。
若催化劑是離子催化劑，則在將催化劑施用於聚 合物之後且在金屬化之前，將一或多種還原劑施用於催化的聚合物以使金屬離子還原至其金屬態。可使用已知使金屬離子還原成金屬的習知還原劑。此類還原劑包含(但不限於)二甲胺硼烷、硼氫化鈉、抗壞血酸、異抗壞血酸、次磷酸鈉、水合肼、甲酸及甲醛。還原劑是以使基本上所有金屬離子還原成金屬的量包含在內。此類量一般是習知量且是所屬領域的技術人員所熟知的。
本發明的方法可用於無電金屬鍍覆各種基板，如印刷電路板及MID。較佳地，本發明的方法用於選擇性無電金屬鍍覆MID，其通常具有3-D組態而非平面組態的基板，如印刷電路板。此類3-D組態的基板由於其3-D組態而難以無電金屬電鍍連續及均一的電路，其中電路需要按照MID組態表面的不規律輪廓。此類印刷電路板及MID可包含以下聚合材料：熱固性樹脂、熱塑性樹脂及其組合，包含纖維(如玻璃纖維)及前述浸漬實施例。
熱塑性樹脂包含(但不限於)縮醛樹脂、丙烯酸樹脂(如丙烯酸甲酯)、纖維素樹脂(如乙酸乙酯、丙酸纖維素、乙酸丁酸纖維素及硝酸纖維素)、聚醚、耐綸(nylon)、聚乙烯、聚苯乙烯、苯乙烯摻合物(如丙烯腈苯乙烯及共聚物及丙烯腈-丁二烯苯乙烯共聚物)、聚碳酸酯、聚氯三氟乙烯以及乙烯基聚合物及共聚物(如乙酸乙烯酯、乙烯醇、乙烯基縮丁醛、氯乙烯、氯乙烯-乙酸酯共聚物、偏二氯乙烯及乙烯基縮甲醛)。
熱固性樹脂包含(但不限於)鄰苯二甲酸烯丙酯、呋喃、三聚氰胺-甲醛、酚-甲醛及酚-糠醛共聚物(單獨 的或與丁二烯丙烯腈共聚物或丙烯腈-丁二烯-苯乙烯共聚物複合)、聚丙烯酸酯、矽酮、脲甲醛、環氧樹脂、烯丙基樹脂、鄰苯二甲酸甘油酯及聚酯。
本發明的方法可用於鍍覆具有低及高Tg樹脂的基板。低Tg樹脂的Tg低於160℃且高Tg樹脂的Tg是160℃及更高。通常，高Tg樹脂的Tg是160℃至280℃或如170℃至240℃。高Tg聚合物樹脂包含(但不限於)聚四氟乙烯(PTFE)及聚四氟乙烯摻合物。此類摻合物包含例如具有聚苯醚及氰酸酯的PTFE。其他類別的包含高Tg樹脂的聚合物樹脂包含(但不限於)環氧樹脂，如雙官能及多官能環氧樹脂、雙馬來醯亞胺/三嗪及環氧樹脂(BT環氧樹脂)、環氧樹脂/聚苯醚樹脂、丙烯腈丁二烯苯乙烯、聚碳酸酯(PC)、聚苯醚(PPO)、聚伸苯基醚(PPE)、聚苯硫醚(PPS)、聚碸(PS)、聚醯胺、聚酯(如聚對苯二甲酸乙二酯(PET)及聚對苯二甲酸丁二酯(PBT))、聚醚酮(PEEK)、液晶聚合物、聚胺基甲酸酯、聚醚醯亞胺、環氧樹脂以及其複合物。
雖然據設想本發明可用於無電沈積任何可無電鍍覆的金屬，但是金屬較佳選自銅、銅合金、鎳或鎳合金。可商購的無電鍍銅浴的實例是CIRCUPOSITTM 880無電銅浴(可自馬薩諸塞州馬波羅的陶氏先進材料購得)。可商購的無電鍍鎳浴的另一個實例是DURAPOSITTM SMT 88(可自馬薩諸塞州馬波羅的陶氏先進材料購得)。可商購的無電鎳浴的實例是DURAPOSITTM SMT 88無電鎳(可自馬薩諸塞州馬波羅的陶氏先進材料購得)。
通常，銅離子源包含(但不限於)銅的水溶性鹵 化物、硝酸鹽、乙酸鹽、硫酸鹽及其他有機及無機鹽。可使用此類銅鹽中之一或多者的混合物提供銅離子。實例包含硫酸銅(如五水合硫酸銅)、氯化銅、硝酸銅、氫氧化銅以及胺基磺酸銅。組合物中可使用習知量的銅鹽。
無電組合物中亦可包含一或多種合金金屬。此類合金金屬包含(但不限於)鎳及錫。銅合金的實例包含銅/鎳及銅/錫。通常，銅合金是銅/鎳。
鎳及鎳合金無電浴的鎳離子源可包含一或多種習知水溶性鎳鹽。鎳離子源包含(但不限於)硫酸鎳及鹵化鎳。鎳離子源可以習知量包含在無電合金組合物中。錫離子源包含(但不限於)硫酸錫、氯化錫及有機錫鹽，如烷基磺酸錫。錫鹽可以習知量包含在無電合金組合物中。
無電金屬鍍覆參數(如溫度及時間)可以是習知的且是所屬領域中眾所周知的。無電金屬鍍覆浴的pH值通常是鹼性的。
在所暴露聚合物材料的選擇性無電金屬鍍覆期間，塗佈有屏蔽塗層的聚合物材料部分抑制無電金屬鍍覆，如圖1步驟5中所示。抑制在塗佈有屏蔽塗層的聚合物部分上的不當背景鍍覆及過度鍍覆，使得金屬鍍覆基本上發生在聚合物的經蝕刻部分。屏蔽塗層能夠按照3-D物品的輪廓形成金屬電路，同時抑制可產生缺陷製品的背景鍍覆及過度鍍覆。能夠進行細線電路圖案化的雷射蝕刻與屏蔽塗層的組合使得能夠在3-D聚合物基板的不規律表面上形成連續微型化電路，從而形成微型化電子製品。
以下實例並不意欲限制本發明的範圍，而是進一 步說明本發明。
實例1
提供多個聚合物基板。根據下表1中所揭示的方法處理每個基板且選擇性無電鍍銅。大部分基板具有尖晶石重金屬氧化物或重金屬錯合物的嵌埋式催化劑。發生無電鍍銅的屏蔽塗層部分用碳化矽類型P220砂紙去除。若基板不具有嵌埋式催化劑，則在無電鍍覆之前將離子催化劑水溶液施用至基板。離子催化劑水溶液包含200ppm鈀離子及1,020ppm 2,6-二甲基吡嗪。還原劑是在1g/L濃度下的二甲胺硼烷。使用可自陶氏先進材料購得的CUPOSITTM 71HS無電銅浴進行無電鍍銅。
在每個聚合物基板被無電鍍銅之後，在室溫下用去離子水沖洗基板且分析銅沈積物的品質。所有銅沈積物呈現為均勻及明亮的。在任一個基板上均未觀察到背景鍍覆或過度鍍覆。
實例2
根據下表3中所揭示的方法，用銅選擇性無電鍍覆多個白色ABS及黑色PC(XANTARTM 3730)聚合物基板。
針對銅沈積品質以及任何背景鍍覆，分析聚合物基板。所有銅沈積物呈現為明亮及平滑的。下表4揭示與背景鍍覆及底塗劑組合物中氯化銅的濃度相關的結果。
除在含有四伸乙基五胺的底塗劑中不包含氯化銅的情況下黑色PC具有輕微背景鍍覆之外，所有聚合物樣品均未出現任何背景鍍覆。
實例3
根據下表5中所揭示的方法，選擇性無電鍍覆白色ABS及黑色PC(XANTARTM 3730)。
針對銅沈積品質以及任何背景鍍覆，分析聚合物基板。所有銅沈積物呈現為明亮及平滑的。下表6揭示與背景鍍覆及底塗劑組合物中氯化銅的濃度相關的結果。
雖然在0.015M及0.03M的氯化銅濃度下存在輕微背景鍍覆，但是在底塗劑組合物包含聚伸乙基亞胺時添加氯化銅顯著抑制背景鍍覆。

Claims (18)

  1. 一種聚合物基板金屬化的方法，包括：a)提供聚合物基板；b)將包括聚胺化合物的底塗劑施用於所述聚合物基板以在所述聚合物基板上提供親水性塗層；c)直接鄰近所述底塗劑施用疏水性頂塗層以在所述基板上形成屏蔽塗層，所述疏水性頂塗層包括一或多種選自烷基醇烷氧基化物、烷基硫醇、非聚合物烷基一級胺及非聚合物烷基二級胺的化合物；d)選擇性蝕刻所述屏蔽塗層以暴露部分所述聚合物基板；e)將催化劑提供於包括所述屏蔽塗層的所述聚合物基板；以及f)選擇性無電金屬鍍覆所述聚合物基板。
  2. 如申請專利範圍第1項所述的方法，其中所述聚胺選自聚伸烷基聚胺及直鏈或分支鏈聚伸烷基亞胺。
  3. 如申請專利範圍第2項所述的方法，其中所述聚伸烷基聚胺具有以下通式：其中R1、R2、R3、R4及R5獨立地選自氫及直鏈或分支鏈(C1-C4)烷基，其中a是2至6且b是2至6。
  4. 如申請專利範圍第3項所述的方法，其中所述聚伸烷基聚胺選自二伸乙基三胺、三伸乙基四胺、四伸乙基五胺、五伸乙基六胺及六伸乙基七胺。
  5. 如申請專利範圍第2項所述的方法，其中所述直鏈聚伸烷基亞胺具有下式：H-(CH2-(CH2) d -NH-) e -H(II)其中d及e是相同或不同的且至少是1。
  6. 如申請專利範圍第2項所述的方法，其中所述直鏈或分支鏈聚伸烷基亞胺具有下式：-(NHCH2CH2-) f [-N(CH2CH2NH2)CH2CH2-] g (III)其中f是1至120,000且g是1至60,000。
  7. 如申請專利範圍第2項所述的方法，其中所述分支鏈聚伸烷基亞胺是質子化聚伸乙基亞胺(PEI鹽)。
  8. 如申請專利範圍第1項所述的方法，其中所述烷基醇烷氧基化物是具有下式的聚乙氧基化醇聚合物：CH3(CH2) m -(O-CH2-CH2) n -OH(IV)其中m是7至25；且n表示1至25的平均乙氧基化程度。
  9. 如申請專利範圍第1項所述的方法，其中所述烷基醇烷氧基化物是具有下式的脂族乙氧基化/丙氧基化共聚物：R-O-(CH2CH2O) x -(CH2CH2CH2O) y -H(V)或R-O-(CH2CH2O) x -(CH2CH(CH3)O) y -H(VI)其中R是具有8至22個碳原子的直鏈或分支鏈烷基或異十三基，且x及y獨立地選自1至20。
  10. 如申請專利範圍第1項所述的方法，其中所述烷基醇烷氧基化物是具有下式的脂族丙氧基化/乙氧基化共聚物：R-O-(CH2CH(CH3)O) x -(CH2CH2O) y -H(VII)或R-O-(CH2CH2CH2O) x -(CH2CH2O) y -H(VIII)其中R是具有8至22個碳原子的直鏈或分支鏈烷基或異十三基，且x及y獨立地選自1至20。
  11. 如申請專利範圍第1項所述的方法，其中所述烷基硫醇具有下式：R6-SH(IX)其中R6是具有1至24個碳原子的直鏈或分支鏈烷基、具有5至14個碳原子的芳基或烷芳基，其中所述烷芳基的烷基是具有1至24個碳原子的直鏈或分支鏈且芳基具有5至14個碳原子。
  12. 如申請專利範圍第1項所述的方法，其中所述非聚合物一級胺具有下式：R7-CH2-NH2(X)其中R7獨立地選自氫、經取代或未經取代的直鏈或分支鏈(C1-C20)烷基、經取代或未經取代的直鏈或分支鏈(C2-C20)烯基、經取代或未經取代的(C3-C8)環烷基或經取代或未經取代的(C6-C10)芳基。
  13. 如申請專利範圍第1項所述的方法，其中所述非聚合物二級胺具有下式：R8-CH2-NH-CH2-R9(XI)其中R8及R9獨立地選自氫、經取代或未經取代的直鏈或分支鏈(C1-C20)烷基、經取代或未經取代的直鏈或分支鏈(C2-C20)烯基、經取代或未經取代的(C3-C8)環烷基或經取代或未經取代的(C6-C10)芳基。
  14. 如申請專利範圍第1項所述的方法，其中所述底塗劑另外包括一或多種金屬離子。
  15. 如申請專利範圍第14項所述的方法，其中所述一或多種金屬離子選自銅、鎳、錳及鋅。
  16. 如申請專利範圍第1項所述的方法，其中所述疏水性頂塗層另外包括一或多種有機溶劑。
  17. 如申請專利範圍第16項所述的方法，其中所述一或多種有機溶劑選自醇、二醇、三醇及更高級多元醇。
  18. 如申請專利範圍第1項所述的方法，其中金屬是銅。
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