TWI620300B - Chip package structure and manufacturing method thereof - Google Patents
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Abstract
一種晶片封裝結構及其製造方法。所述晶片封裝結構包括線路板、晶片、殼體、天線圖案、導線圖案以及遮蔽層。所述晶片配置於所述線路板上。所述殼體配置於所述線路板上,且覆蓋所述晶片,其中所述殼體包括頂蓋與側壁,且所述殼體中含有觸媒粒子。所述天線圖案配置於所述頂蓋的外表面中。所述導線圖案配置於所述側壁的外表面中,並電性連接所述天線圖案與所述線路板。所述遮蔽層至少配置於所述頂蓋的內表面中。A chip package structure and a method of fabricating the same. The chip package structure includes a wiring board, a wafer, a housing, an antenna pattern, a wire pattern, and a shielding layer. The wafer is disposed on the circuit board. The housing is disposed on the circuit board and covers the wafer, wherein the housing includes a top cover and a sidewall, and the housing contains catalyst particles. The antenna pattern is disposed in an outer surface of the top cover. The wire pattern is disposed in an outer surface of the sidewall and electrically connected to the antenna pattern and the circuit board. The shielding layer is disposed at least in an inner surface of the top cover.
Description
本發明是有關於一種晶片封裝結構,且特別是有關於一種具有包括天線圖案與遮蔽層的殼體的晶片封裝結構。The present invention relates to a chip package structure, and more particularly to a chip package structure having a case including an antenna pattern and a mask layer.
對於現行的具有天線(antenna)層的晶片封裝結構來說,在製造過程中,通常是將天線層與晶片同時設置於線路板上,然後利用封裝膠體(moulding compound)來包覆天線層與晶片。For the current chip package structure having an antenna layer, in the manufacturing process, the antenna layer and the wafer are usually disposed on the circuit board at the same time, and then the antenna layer and the wafer are covered by a molding compound. .
然而,在上述的晶片封裝結構中,由於天線層與晶片同時設置於線路板上,因此需要較大面積的線路板來滿足此結構設計需求。如此一來,具有此晶片封裝結構的產品會具有較大的尺寸,因此不容易符合現今對於電子產品微型化與輕量化的需求。However, in the above-described chip package structure, since the antenna layer and the wafer are simultaneously disposed on the circuit board, a large-area circuit board is required to satisfy the structural design requirement. As a result, the product having the chip package structure has a large size, and thus it is not easy to meet the demand for miniaturization and weight reduction of electronic products.
本發明提供一種晶片封裝結構,其具有包括天線圖案與遮蔽層的殼體。The present invention provides a chip package structure having a housing including an antenna pattern and a shielding layer.
本發明提供一種晶片封裝結構的製造方法,其將包括天線圖案與遮蔽層的殼體覆蓋於晶片上。The present invention provides a method of fabricating a chip package structure that covers a housing including an antenna pattern and a shielding layer on a wafer.
本發明的晶片封裝結構包括線路板、晶片、殼體、天線圖案、導線圖案以及遮蔽層。所述晶片配置於所述線路板上。所述殼體配置於所述線路板上,且覆蓋所述晶片,其中所述殼體包括頂蓋與側壁,且所述殼體中含有觸媒粒子。所述天線圖案配置於所述頂蓋的外表面中。所述導線圖案配置於所述側壁的外表面中,並電性連接所述天線圖案與所述線路板。所述遮蔽層至少配置於所述頂蓋的內表面中。The chip package structure of the present invention includes a wiring board, a wafer, a housing, an antenna pattern, a wire pattern, and a shielding layer. The wafer is disposed on the circuit board. The housing is disposed on the circuit board and covers the wafer, wherein the housing includes a top cover and a sidewall, and the housing contains catalyst particles. The antenna pattern is disposed in an outer surface of the top cover. The wire pattern is disposed in an outer surface of the sidewall and electrically connected to the antenna pattern and the circuit board. The shielding layer is disposed at least in an inner surface of the top cover.
在本發明的晶片封裝結構的一實施例中,所述遮蔽層例如配置於所述殼體的整個內表面中。In an embodiment of the wafer package structure of the present invention, the shielding layer is disposed, for example, in the entire inner surface of the housing.
在本發明的晶片封裝結構的一實施例中,所述遮蔽層的厚度例如不超過30 μm。In an embodiment of the chip package structure of the present invention, the thickness of the shielding layer is, for example, not more than 30 μm.
在本發明的晶片封裝結構的一實施例中,更包括封裝膠體。所述封裝膠體包覆所述晶片。In an embodiment of the chip package structure of the present invention, an encapsulant is further included. The encapsulant encapsulates the wafer.
在本發明的晶片封裝結構的一實施例中,所述觸媒粒子例如為金屬粒子、石墨粒子或其組合。In an embodiment of the wafer package structure of the present invention, the catalyst particles are, for example, metal particles, graphite particles, or a combination thereof.
本發明的晶片封裝結構的製造方法包括以下步驟:形成殼體,所述殼體包括頂蓋與側壁,且所述殼體中含有觸媒粒子;於所述頂蓋的外表面中形成天線圖案溝槽、於所述側壁的外表面中形成導線圖案溝槽以及至少於所述頂蓋的內表面中形成遮蔽圖案溝槽,且同時暴露所述觸媒粒子;於所述天線圖案溝槽、所述導線圖案溝槽與所述遮蔽圖案溝槽中形成導電層,其中所述天線圖案溝槽中形成有天線圖案,所述導線圖案溝槽中形成有導線圖案,所述遮蔽圖案溝槽中形成有遮蔽層;將晶片設置於線路板上;將所述殼體設置於所述線路板上並覆蓋所述晶片,且使所述導線圖案電性連接所述天線圖案與所述線路板。A method of fabricating a chip package structure of the present invention includes the steps of: forming a case, the case including a top cover and a sidewall, wherein the case contains catalyst particles; and forming an antenna pattern in an outer surface of the top cover a trench, a conductive pattern trench is formed in an outer surface of the sidewall, and a shielding pattern trench is formed in at least an inner surface of the top cover, and simultaneously exposing the catalyst particle; and the antenna pattern trench, Forming a conductive layer in the wire pattern trench and the shielding pattern trench, wherein an antenna pattern is formed in the antenna pattern trench, and a wire pattern is formed in the wire pattern trench, wherein the shielding pattern trench is formed Forming a shielding layer; disposing the wafer on the circuit board; disposing the housing on the circuit board and covering the wafer, and electrically connecting the conductor pattern to the antenna pattern and the circuit board.
在本發明的晶片封裝結構的製造方法的一實施例中,所述殼體的形成方法例如是進行射出成型製程。In an embodiment of the method of fabricating a chip package structure of the present invention, the method of forming the case is, for example, an injection molding process.
在本發明的晶片封裝結構的製造方法的一實施例中,所述天線圖案溝槽、所述導線圖案溝槽與所述遮蔽圖案溝槽的形成方法例如是進行雷射雕刻製程。In an embodiment of the method of fabricating a chip package structure of the present invention, the method of forming the antenna pattern trench, the wire pattern trench, and the shielding pattern trench is, for example, performing a laser engraving process.
在本發明的晶片封裝結構的製造方法的一實施例中,所述導電層的形成方法例如是進行化學沉積製程或電鍍製程。In an embodiment of the method of fabricating a chip package structure of the present invention, the method of forming the conductive layer is, for example, performing a chemical deposition process or an electroplating process.
在本發明的晶片封裝結構的製造方法的一實施例中,所述將所述殼體設置於所述線路板上的方法例如是進行表面接著技術(surface mounting technology,SMT)製程。In an embodiment of the method of fabricating a chip package structure of the present invention, the method of disposing the case on the circuit board is, for example, a surface mounting technology (SMT) process.
在本發明的晶片封裝結構的製造方法的一實施例中,所述遮蔽圖案溝槽例如形成於所述殼體的整個內表面中。In an embodiment of the method of fabricating a chip package structure of the present invention, the mask pattern trench is formed, for example, in the entire inner surface of the housing.
在本發明的晶片封裝結構的製造方法的一實施例中,所述遮蔽層的厚度例如不超過30 μm。In an embodiment of the method of fabricating the chip package structure of the present invention, the thickness of the shielding layer is, for example, not more than 30 μm.
在本發明的晶片封裝結構的製造方法的一實施例中,在將所述晶片設置於所述線路板上之後以及在將所述殼體設置於所述線路板上之前,更包括形成覆蓋所述晶片的封裝膠體。In an embodiment of the method of fabricating a chip package structure of the present invention, after the wafer is disposed on the circuit board and before the housing is disposed on the circuit board, the cover is further formed The encapsulant of the wafer.
基於上述,在本發明中,採用含有觸媒粒子的材料形成殼體,並利用觸媒粒子做為種子層來於殼體中形成天線圖案與遮蔽層,因此可以簡化製程步驟,且所形成的天線圖案與遮蔽層可以具有較薄的厚度。此外,在本發明中,天線圖案與遮蔽層皆設置於晶片的上方,因此不需要佔據線路板的額外區域,使得所形成的晶片封裝結構可符合微型化的需求。Based on the above, in the present invention, the casing is formed using a material containing catalyst particles, and the antenna particles and the shielding layer are formed in the casing by using the catalyst particles as a seed layer, so that the process steps can be simplified and formed. The antenna pattern and the shielding layer may have a relatively thin thickness. In addition, in the present invention, both the antenna pattern and the shielding layer are disposed above the wafer, so that it is not necessary to occupy an additional area of the wiring board, so that the formed chip package structure can meet the demand for miniaturization.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.
在以下實施例中,於殼體上形成天線圖案與遮蔽層之後,再將殼體與晶片設置於其上的線路板接合。殼體的製造程序與於線路板上設置晶片的程序可單獨各自進行,且本發明並不對兩者的順序進行限定。In the following embodiments, after the antenna pattern and the shielding layer are formed on the casing, the casing is joined to the wiring board on which the wafer is placed. The manufacturing procedure of the casing and the procedure of arranging the wafer on the wiring board can be carried out separately, and the present invention does not limit the order of the two.
圖1A至圖1E為依據本發明實施例的晶片封裝結構的製造流程剖面示意圖。首先,請照圖1A,形成殼體100。殼體100用以覆蓋設置於線路板上的晶片。殼體100的材料例如是塑膠等絕緣材料。此外,殼體100中含有觸媒粒子102。觸媒粒子102例如是金屬粒子、石墨粒子或其組合。殼體100的形成方法例如是使用混合有觸媒粒子102的絕緣材料來進行射出成型製程。因此,觸媒粒子102可均勻地分散於殼體100中。殼體100包括頂蓋100a與側壁100b。在本實施例中,殼體100為矩形殼體(如圖2A與圖2B所示),因此具有4個與頂蓋100a連接的側壁100b,但本發明不限於此。在其他實施例中,視實際需求,殼體100也可以是具有其他形狀的殼體。1A to 1E are schematic cross-sectional views showing a manufacturing process of a chip package structure according to an embodiment of the present invention. First, please form the housing 100 as shown in FIG. 1A. The housing 100 is used to cover the wafers disposed on the circuit board. The material of the casing 100 is, for example, an insulating material such as plastic. Further, the casing 100 contains catalyst particles 102. The catalyst particles 102 are, for example, metal particles, graphite particles, or a combination thereof. The method of forming the casing 100 is, for example, an injection molding process using an insulating material in which the catalyst particles 102 are mixed. Therefore, the catalyst particles 102 can be uniformly dispersed in the casing 100. The housing 100 includes a top cover 100a and a side wall 100b. In the present embodiment, the casing 100 is a rectangular casing (as shown in FIGS. 2A and 2B), and thus has four side walls 100b connected to the top cover 100a, but the present invention is not limited thereto. In other embodiments, the housing 100 may also be a housing having other shapes, depending on actual needs.
然後,請參照圖1B,於頂蓋100a的外表面中形成天線圖案溝槽104、於側壁100b的外表面中形成導線圖案溝槽106以及於頂蓋100a的內表面中形成遮蔽圖案溝槽108,其中導線圖案溝槽106與天線圖案溝槽104連接。在本文中,「內表面」表示與殼體100所包覆的空間相鄰的表面,而「外表面」則為殼體100中與「內表面」相對的表面。天線圖案溝槽104、導線圖案溝槽106與遮蔽圖案溝槽108的形成方法例如是對殼體100進行雷射雕刻製程。在以雷射對殼體100雕刻的過程中,雷射可移除部分的殼體100。此時,在經雕刻的區域中,殼體100中所包含的觸媒粒子102會被暴露出來,且吸收雷射的能量,以被「活化」。如圖1B所示,在天線圖案溝槽104、導線圖案溝槽106與遮蔽圖案溝槽108的側壁與底部處,觸媒粒子102被暴露出來。Then, referring to FIG. 1B, an antenna pattern trench 104 is formed in the outer surface of the top cover 100a, a wire pattern trench 106 is formed in the outer surface of the sidewall 100b, and a mask pattern trench 108 is formed in the inner surface of the top cover 100a. Wherein the wire pattern trench 106 is connected to the antenna pattern trench 104. Herein, the "inner surface" indicates a surface adjacent to the space covered by the casing 100, and the "outer surface" is the surface of the casing 100 opposite to the "inner surface". The method of forming the antenna pattern groove 104, the wire pattern groove 106, and the shielding pattern groove 108 is, for example, a laser engraving process for the housing 100. During engraving of the housing 100 with a laser, the laser can remove portions of the housing 100. At this time, in the engraved area, the catalyst particles 102 contained in the casing 100 are exposed and absorb the energy of the laser to be "activated". As shown in FIG. 1B, at the sidewalls and bottom of the antenna pattern trench 104, the wire pattern trench 106, and the mask pattern trench 108, the catalyst particles 102 are exposed.
天線圖案溝槽104、線圖案溝槽106與遮蔽圖案溝槽108為後續形成天線圖案、導線圖案與遮蔽層的區域,而被暴露出來的觸媒粒子102可做為形成天線圖案、導線圖案與遮蔽層的種子層。因此,根據所需的天線圖案、導線圖案與遮蔽層的厚度,可控制雷射雕刻所形成的溝槽的深度。在本實施例中,天線圖案溝槽104、線圖案溝槽106與遮蔽圖案溝槽108的深度不超過30 μm。也就是說,後續形成於天線圖案溝槽104、線圖案溝槽106與遮蔽圖案溝槽108的天線圖案、導線圖案與遮蔽層的厚度不超過30 μm。在此厚度範圍中,天線圖案、導線圖案與遮蔽層可具有所需的電性,且不會因厚度過厚而浪費過多的材料。The antenna pattern trenches 104, the line pattern trenches 106 and the masking pattern trenches 108 are regions in which the antenna pattern, the conductor pattern and the shielding layer are subsequently formed, and the exposed catalyst particles 102 can be formed as an antenna pattern, a conductor pattern and The seed layer of the masking layer. Therefore, the depth of the trench formed by the laser engraving can be controlled according to the desired antenna pattern, the wire pattern, and the thickness of the shielding layer. In the present embodiment, the depth of the antenna pattern trench 104, the line pattern trench 106, and the mask pattern trench 108 does not exceed 30 μm. That is, the thickness of the antenna pattern, the wiring pattern, and the shielding layer which are subsequently formed in the antenna pattern trench 104, the line pattern trench 106, and the mask pattern trench 108 does not exceed 30 μm. In this thickness range, the antenna pattern, the wire pattern and the shielding layer can have the required electrical properties without wasting excessive material due to the excessive thickness.
接著,請參照圖1C,於天線圖案溝槽104、導線圖案溝槽106與遮蔽圖案溝槽108中形成導電層。導電層的形成方法例如是以經活化的觸媒粒子102(暴露於溝槽中)做為種子層來進行化學沉積製程或電鍍製程。形成於天線圖案溝槽104中的導電層做為天線圖案110,形成於導線圖案溝槽106中的導電層做為導線圖案112,而形成於遮蔽圖案溝槽108中的導電層做為遮蔽層114。導線圖案112與天線圖案110連接,因此藉由導線圖案112可使天線圖案110與其他元件電性連接。遮蔽層114用以避免被殼體100覆蓋的元件受到來自天線圖案110及其他來自外界電磁波的電磁效應影響,以防止電子訊號受干擾而導致訊號損耗。Next, referring to FIG. 1C, a conductive layer is formed in the antenna pattern trench 104, the wire pattern trench 106, and the shielding pattern trench 108. The method of forming the conductive layer is, for example, a chemical deposition process or an electroplating process using the activated catalyst particles 102 (exposed to the trench) as a seed layer. The conductive layer formed in the antenna pattern trench 104 is used as the antenna pattern 110, and the conductive layer formed in the conductive pattern trench 106 is used as the conductive pattern 112, and the conductive layer formed in the shielding pattern trench 108 is used as the shielding layer. 114. The wire pattern 112 is connected to the antenna pattern 110, so that the antenna pattern 110 can be electrically connected to other elements by the wire pattern 112. The shielding layer 114 is used to prevent the components covered by the housing 100 from being affected by electromagnetic effects from the antenna pattern 110 and other electromagnetic waves from the outside to prevent the electronic signal from being disturbed and causing signal loss.
在本實施例中,天線圖案110的形狀並不受到圖2A所示的限制。在其他實施例中,可視實際需求而將天線圖案110形成為任何形狀。此外,在本實施例中,導線圖案112僅形成於一個側壁100b中,但本發明不限於此。在其他實施例中,導線圖案112也可以形成於多個側壁100b中,以與天線圖案110連接。另外,在本實施例中,遮蔽層114僅形成於頂蓋100a的內表面中,但本發明不限於此。在其他實施例中,遮蔽層114也可以形成於殼體100的整個內表面中,即形成於頂蓋100a的內表面以及全部的側壁100b的內表面中,以進一步提高遮蔽層114的電磁遮蔽效果,如圖3所示。In the present embodiment, the shape of the antenna pattern 110 is not limited by the one shown in FIG. 2A. In other embodiments, the antenna pattern 110 can be formed into any shape depending on actual needs. Further, in the present embodiment, the wire pattern 112 is formed only in one side wall 100b, but the present invention is not limited thereto. In other embodiments, the wire pattern 112 may also be formed in the plurality of sidewalls 100b to be connected to the antenna pattern 110. In addition, in the present embodiment, the shielding layer 114 is formed only in the inner surface of the top cover 100a, but the present invention is not limited thereto. In other embodiments, the shielding layer 114 may also be formed in the entire inner surface of the housing 100, that is, in the inner surface of the top cover 100a and the inner surface of all the side walls 100b to further improve the electromagnetic shielding of the shielding layer 114. The effect is shown in Figure 3.
請參照圖1D,將晶片116設置於線路板118上。在本實施例中,晶片116藉由打線接合(wire bonding)的方式經由導線120而與線路板118的接墊122連接,使得晶片116與線路板118電性連接。在其他實施例中,晶片116也可藉由覆晶(flip chip)的方式與線路板118電性連接。此外,於線路板118的底部的接墊124上形成銲球126。銲球126做為將線路板118連接至外部元件的接點。Referring to FIG. 1D, the wafer 116 is disposed on the circuit board 118. In the present embodiment, the wafer 116 is connected to the pads 122 of the circuit board 118 via the wires 120 by wire bonding, so that the wafer 116 is electrically connected to the circuit board 118. In other embodiments, the wafer 116 can also be electrically connected to the circuit board 118 by means of a flip chip. In addition, solder balls 126 are formed on the pads 124 at the bottom of the wiring board 118. Solder balls 126 serve as contacts for connecting circuit board 118 to external components.
之後,請參照圖1E,將殼體100設置於線路板118上,且使殼體100覆蓋晶片116,以完成本實施例的晶片封裝結構10。將殼體100設置於線路板118上的方法例如是進行表面接著技術製程。在將殼體100設置於線路板118上之後,導線圖案112可與線路板118的接墊連接,以使天線圖案110電性連接至線路板118。在晶片封裝結構10中,由於遮蔽層114位於天線圖案110與晶片116之間,因此可以避免晶片116受到來自天線圖案110及其他來自外界電磁波的電磁效應影響,以防止電子訊號受干擾而導致訊號損耗。Thereafter, referring to FIG. 1E, the housing 100 is disposed on the circuit board 118, and the housing 100 is covered with the wafer 116 to complete the wafer package structure 10 of the present embodiment. The method of arranging the housing 100 on the wiring board 118 is, for example, a surface following technical process. After the housing 100 is disposed on the circuit board 118, the wire pattern 112 can be connected to the pads of the circuit board 118 to electrically connect the antenna pattern 110 to the circuit board 118. In the chip package structure 10, since the shielding layer 114 is located between the antenna pattern 110 and the wafer 116, the wafer 116 can be prevented from being affected by the electromagnetic effect from the antenna pattern 110 and other electromagnetic waves from the outside to prevent the electronic signal from being disturbed and causing the signal. loss.
在本實施例中,在將晶片116設置於線路板118上之後,可直接將殼體100設置於線路板118上,而不需事先形成封裝膠體來包覆晶片118。在其他實施例中,也可以在將晶片116設置於線路板118上之後,於線路板118上形成包覆晶片116的封裝膠體,之後再將殼體100設置於線路板118上。In the present embodiment, after the wafer 116 is placed on the circuit board 118, the housing 100 can be directly disposed on the wiring board 118 without previously forming an encapsulant to cover the wafer 118. In other embodiments, after the wafer 116 is disposed on the circuit board 118, the encapsulant covering the wafer 116 may be formed on the circuit board 118, and then the housing 100 may be disposed on the circuit board 118.
此外,在本實施例中,天線圖案110與遮蔽層114皆位於晶片116的上方,因此不需要額外使用線路板118的其他區域來設置天線圖案與遮蔽層。如此一來,晶片封裝結構10可具有較小的尺寸,以符合微型化的需求。In addition, in the present embodiment, the antenna pattern 110 and the shielding layer 114 are both located above the wafer 116, so that it is not necessary to additionally use other areas of the wiring board 118 to set the antenna pattern and the shielding layer. As such, the chip package structure 10 can be of a smaller size to meet the needs of miniaturization.
雖然本發明已以實施例發明如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。While the present invention has been described above with reference to the embodiments of the present invention, it is not intended to limit the present invention, and it is possible to make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.
10‧‧‧晶片封裝結構
100‧‧‧殼體
100a‧‧‧頂蓋
100b‧‧‧側壁
102‧‧‧觸媒粒子
104‧‧‧天線圖案溝槽
106‧‧‧導線圖案溝槽
108‧‧‧遮蔽圖案溝槽
110‧‧‧天線圖案
112‧‧‧導線圖案
114‧‧‧遮蔽層
116‧‧‧晶片
118‧‧‧線路板
120‧‧‧導線
122、124‧‧‧接墊
126‧‧‧銲球10‧‧‧ Chip package structure
100‧‧‧shell
100a‧‧‧Top cover
100b‧‧‧ side wall
102‧‧‧catalyst particles
104‧‧‧Antenna pattern groove
106‧‧‧ wire pattern groove
108‧‧‧Shading pattern groove
110‧‧‧Antenna pattern
112‧‧‧Wire pattern
114‧‧‧Shielding layer
116‧‧‧ wafer
118‧‧‧PCB
120‧‧‧ wire
122, 124‧‧‧ pads
126‧‧‧ solder balls
圖1A至圖1E為依據本發明一實施例的晶片封裝結構的製造流程剖面示意圖。 圖2A與圖2B為依據本發明一實施例的殼體的立體示意圖。 圖3為依據本發明另一實施例的殼體的剖面示意圖。1A-1E are schematic cross-sectional views showing a manufacturing process of a chip package structure according to an embodiment of the invention. 2A and 2B are perspective views of a housing in accordance with an embodiment of the present invention. 3 is a cross-sectional view of a housing in accordance with another embodiment of the present invention.
Claims (13)
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TW200633303A (en) * | 2005-01-31 | 2006-09-16 | Fujitsu Component Ltd | Antenna apparatus and electronic device |
TW200834869A (en) * | 2007-02-07 | 2008-08-16 | Shinko Electric Ind Co | Method of manufacturing semiconductor device |
TW201509579A (en) * | 2013-09-03 | 2015-03-16 | Taiwan Uyemura Co Ltd | Metallization method for plastic mold interconnect element |
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TW200633303A (en) * | 2005-01-31 | 2006-09-16 | Fujitsu Component Ltd | Antenna apparatus and electronic device |
TW200834869A (en) * | 2007-02-07 | 2008-08-16 | Shinko Electric Ind Co | Method of manufacturing semiconductor device |
TW201509579A (en) * | 2013-09-03 | 2015-03-16 | Taiwan Uyemura Co Ltd | Metallization method for plastic mold interconnect element |
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