TWI617001B - Semiconductor device - Google Patents

Abstract

An embodiment of the present invention is directed to a semiconductor device including: first and second electrodes respectively including first and second bus bars that are reduced in cross section in opposite directions; and a plurality of interleaved first And second conductive fingers extending from the first and second bus bars, respectively.

Description

Semiconductor device

Embodiments of the invention relate to the structure of a semiconductor device ("SD").

Various SDs, such as diodes and field effect transistors ("FETs"), are operable to selectively be in an on or off state. The SD may include a first electrode and a second electrode electrically connected through an intervening semiconductor component, the intervening semiconductor component having a relatively low resistance when the SD is in an on state and having a state when the SD is in an off state Relatively high resistance. Therefore, the SD can transmit an "on current" through the first and second electrodes while in the on state rather than in the off state. For example, in the case where the SD system is biased by a diode, the diode is in an on state and is operable to be between the first electrode (anode) and the second electrode (cathode) The on current is passed through the intervening and appropriately configured semiconductor components. In another example, in the case of an SD-based FET in which a suitable voltage is applied to a third electrode that acts as one of the gate electrodes, the FET is operable to operate at the first electrode (source) and the second electrode The switching current is passed between the (drain) and the appropriately configured semiconductor components. The electrode can be formed on one or more epitaxial layers ("layers") grown on the substrate. It will be appreciated that a structure formed or disposed "on" the substrate can be formed on one of the epitaxial layers and is not in direct contact with the substrate itself. Moreover, the semiconductor component through which the on-current is delivered may comprise a portion of the one or more epitaxial layers grown on the semiconductor substrate, wherein the layers are suitably configured as needed. For ease of presentation, as used herein, a "semiconductor substrate" or "substrate" can include the one or more epitaxial layers.

As SD is reduced in size to achieve higher concentrations of devices with smaller die areas and circuits with smaller profiles, the current density across these circuits tends to increase. The current density is typically expressed as, for example, a current per unit area of unit amps/mm ² . In SD, the electrode is formed as a patterned thin metal layer that can have a substantially uniform thickness. Furthermore, especially when operating current at high frequencies, current can occur preferentially at or near the surface of the electrode. Thus, the current density can be expressed in the context of an SD circuit as, for example, a current per section width in units of amps/mm ² . The increased current density tends to make the SD susceptible to damage due to ohmic overheating. The increased current density can also result in electromigration, where one of the electrodes is displaced due to momentum transfer from the conducting electrons to the electrode, ultimately causing failure or failure of the electrode. In addition, the uneven distribution of current through the SD can reduce the overall current that an SD can safely transfer, which is due to the non-uniformity forming a pocket of excessive current density.

An aspect of an embodiment of the present invention provides an SD (for example, a diode or a FET) having an electrode for delivering an on current, the electrodes being configured to mitigate current density along the edge The non-uniformity of the path of the on current.

According to an embodiment of the present invention, there is provided an SD hereinafter referred to as a "comb electrode SD", the SD comprising first and second first and second bus bars respectively reduced in cross section in opposite directions Two "comb electrodes". The first and second comb electrodes further include a plurality of first and second staggered conductive fingers extending from the first and second bus bars, respectively. When the comb electrodes SD are in an on state, the first and second comb electrodes are electrically connected through the respective conductive fingers and the intervening semiconductor components, wherein the first and second conductive fingers The interface between the objects defines a perimeter of the current available between the first and second conductive fingers.

The comb electrode SD is operable to transfer an on current between a terminal ("first terminal") of the first comb electrode and a terminal ("second terminal") of the second comb electrode. Depending on the configuration of the comb electrode SD, the turn-on current can flow from the first terminal to the The second terminal flows from the second terminal to the first terminal in other directions. Moreover, the magnitude of the turn-on current through the bus bars can vary along the length of the respective bus bars as the current is transferred between the first and second conductive fingers. In accordance with an embodiment of the invention, the cross-section of each bus bar decreases as it extends away from its respective terminal. In the context of the on current flowing from the terminal of the first comb electrode to the terminal of the second comb electrode, the first bus bar profile is reduced relative to the direction of the on current and the cathode bus bar The profile increases in this direction relative to the on current.

In accordance with an embodiment of the present invention, the first and second bus bars can be configured to mitigate changes in current density along the length of the bus bars, although the overall current changes. In a particular embodiment of the invention, the bus bar profile may be substantially proportional to the magnitude of the on current along the length of the bus bar. In this proportional configuration, the change in current density along the length of the bus bars can be substantially eliminated, although the overall current changes. In a particular embodiment of the invention, the current density can be substantially constant along the length of the bus bars.

In a particular embodiment of the invention, the sum of the cross-section of the anode bus bar and the cross-section of the cathode bus bar remains substantially constant at each point along the longitudinal axis of the two bus bars. In a particular embodiment of the invention, the profiles of the bus bars may vary linearly in inverse proportion to each other.

According to an embodiment of the invention, the sides of the first and second bus bars facing each other may be substantially parallel to each other. In a particular embodiment of the invention, the first and second bus bars are configurable relative to one another in a tongue configuration in a recess, wherein one of the electrodes includes a single center at one of the other electrodes Two bus bar arms on both sides of the bus bar and "surrounding" the center bus bar. Optionally, the first and second electrically conductive fingers may be substantially parallel to each other. Optionally, the first and second conductive fingers may be staggered in the intervening space between the first and second bus bars. Optionally, the first and second conductive fingers can have substantially the same length.

According to an embodiment of the invention, the first and second comb electrodes including the respective terminals, bus bars and conductive fingers do not overlap. In a particular embodiment of the invention, the first and second comb electrodes are formed on one of the same epitaxial layers of the semiconductor substrate.

According to an embodiment of the present invention, the comb electrode SD may further include a third comb electrode including a plurality of third portions that are generally connected to one of the third bus bars extending from a third terminal. Conductive fingers. The third conductive fingers are configured such that each third conductive finger is disposed between a first conductive finger and a second conductive finger.

According to an embodiment of the invention, the comb electrode SD having the first and second comb electrodes may be a lateral diode ("comb diode"), wherein the first comb electrode system An anode and the second comb electrode is a cathode. Alternatively, the comb electrode SD may further comprise a lateral FET ("comb FET") of a gate electrode (which may be a third electrode), wherein the first comb electrode is a source, The second electrode is a drain.

In the discussion, unless stated otherwise, an adjective such as "substantially", "relative" and "about" which is a condition or characteristic of one of the features or features of an embodiment of the invention is understood to mean the condition. Or the characteristics are defined within tolerances acceptable for the operation of an embodiment of an application for which it is intended. The word "or" in the specification and claims is to be construed as an inclusive or "or" or "an"

The Summary is provided to introduce a selection of concepts that are further described below in the Detailed Description. The summary is not intended to identify key features or features of the claimed subject matter, and is not intended to limit the scope of the claimed subject matter.

100‧‧‧Exemplified comb-shaped diode/comb diode

110‧‧‧Semiconductor substrate/substrate

120‧‧‧Anode/Comb Anode

121‧‧‧Anode terminal

122‧‧‧Center anode bus bar / anode bus bar / individual bus bar / bus bar

124‧‧‧ Conductive fingers/anode fingers

130‧‧‧Cathode/comb cathode

131‧‧‧cathode terminal

132‧‧‧Cathode bus bars/different bus bars/bus bars

134‧‧‧ Conductive fingers/cathode fingers

170‧‧‧Alternative comb diode

200‧‧‧Example of comb-like field effect transistor/comb field effect transistor

210‧‧‧Semiconductor substrate/substrate

212‧‧‧Insulation

214‧‧‧ Ditch

220‧‧‧Source/comb source

221‧‧‧ source terminal

222‧‧‧Center source bus bar/source bus bar/bus bar

224‧‧‧Source finger/conductive finger

230‧‧‧Bungee/comb bungee

231‧‧‧汲 Extreme

232‧‧‧Bungy bus bar/cathode bus bar/bus bar

234‧‧‧Electrical fingers/bungee fingers

240‧‧‧ gate

241‧‧‧汲 Extreme

242‧‧ ‧ gate bus bar

245‧‧ ‧ prominent spine/gate contact strip

244‧‧‧Electrical fingers/gate fingers

262‧‧ ‧ empty bridge

270‧‧‧Replaceable comb field effect transistor

Non-limiting examples of embodiments of the invention are set forth below with reference to the accompanying drawings, which are incorporated herein by reference. The same structures, elements or components that are present in one or more of the figures are generally identified by the same reference numerals in the drawings. Show. For the sake of clarity and clarity of presentation, the dimensions of the components and features shown in the various figures are not necessarily to scale.

1 schematically shows, in a top view, an anode and a cathode electrode of a comb diode according to an embodiment of the invention; FIG. 2 schematically shows a comb according to an embodiment of the invention in a top view. a source, a drain and a gate electrode of a FET; FIG. 3 schematically shows, in a top view, an electrode in place of a comb diode according to an embodiment of the invention; and FIG. 4 is schematically illustrated in a top view An electrode of a comb FET is replaced in accordance with one of the embodiments of the present invention.

In the following detailed description, an assembly of a comb diode according to an embodiment of the present invention is schematically illustrated in FIG. 1 and discussed with reference to the drawings. An assembly of a comb FET according to one embodiment of the present invention is schematically illustrated in FIG. 2 and discussed with reference to the drawings. An alternative comb diode and an alternative comb FET are schematically illustrated in Figures 3 through 4 and discussed with reference to the figures.

Referring now to Figure 1, there is shown a schematic diagram of an exemplary comb diode 100 having an anode 120 ("comb anode") and a cathode 130 ("comb cathode") formed on a semiconductor substrate 110. . The substrate 110 may optionally include Si, SiC, GaAs or GaN. The substrate may optionally be a layered substrate such as a GaN wafer substrate on a Si or a GaN substrate on a SiC. The comb anode 120 includes a plurality of electrically conductive fingers 124 ("anode fingers") extending from each of the sides of a central anode bus bar 122 in a "fishbone" configuration. The comb cathode 130 includes two cathode bus bars 132 on each of the two sides of the configured anode bus bar 122 in the form of a tongue in a recess. A plurality of conductive fingers 134 ("cathode fingers") extend from each of the cathode bus bars 132 and are interleaved with the anode fingers 124. The comb anode 120 further includes an anode terminal 121 connected to one end of the anode bus bar 122 and a comb cathode 130 further includes a cathode terminal 131 connected to one of the ends of the cathode bus bar 132. When the comb diode is forward biased, the comb diode 100 is operable to pass an "on current" through the intervening semiconductor between the anode finger 124 and the cathode finger 134. One of the current paths in the substrate. The comb anodes 120 do not overlap with the comb cathodes 130 or are not in contact with each other. In a particular embodiment of the invention, anode fingers 124 and cathode fingers 134 can be on one of the same epitaxial layers on semiconductor substrate 110. In the comb diode 100 as shown in FIG. 1, the anode fingers 124 are schematically presented with rounded ends and the cathode fingers 134 are schematically presented with angled ends. Making this distinction promotes visual differentiation of the anode and cathode fingers and is not intended to be limiting.

The comb anode 120 and the comb cathode 130 may optionally include one or more of metals such as aluminum, gold, copper, nickel or titanium or a combination thereof. The combination can be in the form of an alloy. Alternatively, the combination can be a plurality of layers of different metals that can be elemental metals or alloys. Various methods of applying a patterned metal layer on a semiconductor substrate are known in the art.

By a conventional manner, when the comb diode 100 is forward biased, the on current flows from the anode terminal 121 to the cathode terminal 131. The turn-on current enters the comb diode from the anode terminal 121, travels through the anode bus bar 122, enters the anode finger 124 and passes through the intervening portion of the semiconductor substrate 110 to the adjacent cathode finger 134, and continues It passes through the cathode bus bar 132 to the cathode terminal 131. The staggered configuration of the anode fingers and the cathode fingers forms a large total circumference available for the current between the anode 120 and the cathode 130.

The varying white square arrows shown in Figure 1 schematically show the direction and magnitude of the turn-on current through the different electrode bus bars of the comb diode 100, and the small fill arrows schematically show through the electrodes The direction and magnitude of the on current of the finger. The different sizes of the white square arrows reflect the change in the magnitude of the turn-on current as it travels through the bus bars. As indicated by the white square arrows, the turn-on current through the anode bus bar 122 decreases from the anode terminal 121 along its length, as more on current flows from the anode. Strip 122 is turned through the staggered conductive fingers to the cathode. Simultaneously and as indicated schematically by the size of the white square arrow, the turn-on current through the cathode bus bar 132 increases along its length towards the cathode terminal 131, since more turn-on current is drawn from the anode bus bar 122. The staggered conductive fingers enter the cathode bus bar 132. The turn-on current through each of the conductive fingers 124, 134 can have substantially the same magnitude as indicated by the same small fill arrows.

According to an embodiment of the invention, the first and second bus bars are reduced in cross section in opposite directions. Along the current path, the distance from the anode terminal is inversely proportional to the distance from the cathode terminal. That is, as the on current flows away from the anode terminal, the on current flows toward the cathode terminal. Thus, in accordance with an embodiment of the present invention, the cross-section of each bus bar decreases as it extends away from its respective terminals. In the practice of switching the current from the anode terminal to the cathode terminal, the anode bus bar profile decreases relative to the direction of the on current and the cathode bus bar profile increases relative to the direction of the on current.

In accordance with an embodiment of the present invention, each bus bar can be shaped to change its profile along its length to have a profile that is substantially proportional to the magnitude of the on current. This proportional configuration is used to reduce the change in current density along the length of the bus bar, although the overall current changes. The anode bus bar profile is reduced in accordance with the length of the anode bus bar in accordance with the decrease in the amount of turn-on current for stabilizing the current density along the length of the anode bus bar. Similarly, the profile of the cathode bus bar is increased in accordance with the increase in the length of the cathode bus bar in accordance with the increase in the on current for stabilizing the current density along the length of the cathode bus bar. In a particular embodiment of the invention, the current density can be substantially constant along the length of the bus bars.

The change in current at each point along the bus bar may depend on the magnitude of the current through the conductive fingers. Thus, in a particular embodiment of the invention, the shape of each bus bar may depend on the resistance of the conductive fingers and the distribution of the conductive fingers along the bus bars.

The change in profile can be gradual. Alternatively, the profile change can be made, for example, in a stepwise manner before, during or after each conductive finger. In the invention In a particular embodiment, the change in profile is substantially linear.

In a particular embodiment of the invention, the change in the profile of the first and second bus bars along their respective lengths is accomplished by varying one of the widths of the bus bars while the thickness of the bus bars remains substantially constant. In the case where the electrode is formed as a patterned thin metal layer of substantially uniform thickness on the semiconductor substrate 110, such a change in the width of the bus bar profile is advantageous. Furthermore, the change in width of the bus bar profile is advantageous in the case where the turn-on current has a high frequency. At high current frequencies, current tends to occur at or near the surface of the electrode, and increasing electrode thickness is less effective at reducing current density than increasing electrode width.

As provided in an embodiment of the present invention, the comb diode 100 having the anode and cathode bus bars reduced in width may advantageously cover a smaller surface area and one of the bus bars having a constant width. The polar body allows more diodes to be fabricated per wafer. As discussed above, the total current along the bus bars is highest toward the respective terminals, and the width of the bus bars of the comb diode 100 is correspondingly the widest at its closest to its respective terminals. A bus bar of a constant width similar to a conventional diode configured to be configured needs to have the same width as the widest portion of the reduced width bus bar of the comb diode 100 to have a comparable current capacity and maximum current density. . Thus, as provided in an embodiment of the invention, the reduced width bus bars of the comb diode 100 occupy a relatively small surface area. Therefore, the comb diode 100 as a whole can occupy a small surface area. Alternatively, one of the bus bars having a constant width that occupies the same total surface area as the comb diode 100 may require the anode and cathode fingers to be shortened to accommodate the constant width of the bus bar. The larger surface area, thus resulting in the conventional diode having a higher on-current resistance due to the smaller total circumference of one of the available currents between the anode and the cathode.

In a particular embodiment of the invention, each anode finger 124 is substantially parallel to each other and each cathode finger 134 is substantially parallel to each other. Optionally, the conductive fingers can be connected to their respective bus bars at a substantially vertical angle. Depending on the situation, the anode fingers 124 are substantially It is parallel to the cathode fingers 134. Optionally, the sides of the anode bus bar 122 and the cathode bus bar 132 facing each other may be substantially parallel to each other.

According to one embodiment of the invention, each of the electrically conductive fingers can be substantially identical in size and shape. Each of the electrically conductive fingers can be further substantially identical in combination. In the case where each of the conductive fingers is substantially identical in size, shape and combination, the electrical resistance of each of the fingers is also generally substantially the same.

In the exemplary comb diode of FIG. 1, the conductive fingers 124, 134 are substantially equal in size, and the turn-on current through each of the conductive fingers is substantially equal (eg, by the same small fill arrow) Indicative), and the conductive fingers 124, 134 extend from their respective bus bars 122, 132 at regular intervals. In this configuration of conductive fingers, the current through the anode bus bar 122 decreases along its length in a substantially linear manner proportional to the distance from the anode terminal 121. Similarly, the current through the cathode bus bar 132 decreases along its length in a substantially linear manner proportional to the distance from the cathode terminal 131. In other words, the anode bus bar profile decreases substantially linearly with respect to the direction of the on current and the cathode bus bar profile increases substantially linearly with respect to the direction of the on current. According to an embodiment of the invention, the width of the bus bars 122, 132 is linearly varied along a length of the bus bar at a ratio substantially equal to the change in magnitude of the on current for mitigating or substantially eliminating current density along the length of the bus bar The change in the length of the anode and cathode bus bars. In a particular embodiment of the invention, the current density in the anode and cathode bus bars is substantially evenly distributed along the length of the bus bar and is substantially constant.

Moreover, in the exemplary comb diode 100 of FIG. 1, the anode bus bar 122 is parallel to the cathode bus bar 132 and the conductive fingers 124, 134 extend perpendicularly from their respective bus bars. Moreover, all of the conductive fingers 124, 134 are substantially parallel to one another. In accordance with an embodiment of the present invention, in this configuration, the anode and cathode bus bars remain substantially constant over the combined width at each of the respective lengths of the bus bars.

In an alternative configuration of the comb diode, the turn-on current can flow in the opposite direction, wherein the comb anode 120 acts as a cathode and the comb cathode 130 acts as an anode, and wherein the semiconductor base The board 110 is suitably configured.

The comb anode 120 and the comb cathode 130 can also be advantageously incorporated into a lateral FET rather than a lateral diode. An exemplary lateral FET incorporating one of the sources substantially identical to the comb anode 120 and one of the drains substantially identical to the comb cathode 130 is illustrated in greater detail with respect to FIG.

Referring now to FIG. 2, FIG. 2 shows an exemplary comb FET 200 having a source 220 ("comb source") and a drain 230 ("comb") formed on a semiconductor substrate 210. A schematic diagram. The comb source 220 is substantially identical in construction to the comb anode 120 and has a plurality of conductive fingers extending from each of the two sides of a central source bus bar 222 in a "fishbone" configuration. 224 ("source finger"), and one source terminal 221 connected to one end of the source bus bar 222. The comb-shaped drain 230 is substantially identical in construction to the comb-shaped cathode 130 and has two drain bus bars on each of the two sides of the source bus bar 222 in the configuration of a tongue in a recess. 232, wherein the conductive fingers 234 ("dual pole fingers") extend from each of the drain bus bars 232 and are connected to one of the terminals 231 of one of the drain bus bars 232. The bus bars 222, 232 have the same configuration and properties as described above with respect to the bus bars 122, 132, respectively.

The comb FET 200 can further include a gate 240 ("comb gate") including two gate bus bars 242 on each of the two sides of the source bus bar 222, and connected to One of the ends of the buckering bus bar 242 is the terminal 241. A plurality of conductive fingers 244 ("gate fingers") extend from each of the gate bus bars 242. Gate fingers 244 are configured such that each gate finger 244 is disposed between a source finger 224 and a drain finger 234.

The arrangement of gate fingers 244 and source fingers 224 and drain fingers 234 on substrate 210 is shown in greater detail in the inset of FIG. In accordance with an embodiment of the invention, the gate fingers 244 are separated from the source fingers 224 and the drain fingers 234 and are not in contact. The gate fingers 244 are optionally disposed closer to the source fingers 224 than to the drain fingers 234. In a particular embodiment of the invention, the gate fingers 244 are disposed on one of the semiconductor substrates 210. On the edge layer 212. The gate finger 244 is shaped to include a protruding spine ("gate contact strip") 245, one of which is "the mushroom type gate" (also referred to as a "T-shaped gate"), which protrudes from the spine. It is narrower than the body of the gate finger and continues along its longitudinal axis. Gate fingers 244 are in contact with insulating layer 212 via gate contact strips 245 as appropriate. Substrate 210 and insulating layer 212 are optionally configured to form trenches 214, and gate contact strips 245 are disposed within trenches 214 as appropriate.

When an appropriate voltage is applied to the gate fingers, the comb FET 200 can pass an "on current" between the source fingers 224 and the drain fingers 234 through one of the interposing semiconductor substrates. Current path.

In accordance with an embodiment of the present invention, the base portion of the source fingers 224 proximate to the source bus bar 222 coincides with the gate bus bar 242. A base portion of the source fingers 224 including at least the portion overlapping the gate bus bar can include an empty bridge 262 that provides a gap between the gate bus bar and the base portion of the source fingers The gap is such that the two electrodes overlap without contact. Optionally, the base portion of the source fingers 224 can be higher or lower with respect to the gate bus bar 242 (not shown). Optionally, the empty bridge 262 is thinner than the remainder of the source fingers 224 to provide clearance between the source fingers and the gate bus bars (not shown) and may also be wider than the remainder of the source fingers Partially to mitigate the reduction in the profile of the source fingers and thus stabilize the current density at the bridge. The overlap of the base finger base portion with the gate bus bar but the non-contact portion may be separated by an insulating structure (not shown).

The comb diode 100 has a reflection symmetry in which the axis of symmetry is equivalent to the longitudinal axis of the anode bus bar 122. An aspect of an embodiment of the present invention may also provide an asymmetric comb diode. An exemplary asymmetric comb diode is shown in FIG. 3, and FIG. 3 schematically illustrates the replacement of a comb diode including one half of the comb diode 100 on one side of its axis of symmetry. 170.

The comb FET 200 also has reflection symmetry, wherein the axis of symmetry is equivalent to the longitudinal axis of the source bus bar 222. An aspect of an embodiment of the present invention may also provide an asymmetric comb FET. An exemplary asymmetric comb FET is shown in FIG. 4, which schematically illustrates the replacement of comb FET 270 by one half of comb FET 200 on one side of its axis of symmetry.

In the description of the present application and the scope of the patent application, each of the verbs "including", "including" and "having" and its cognates are used to indicate the verb's object or several objects that are not necessarily the subject or verbs of the verb. A complete list of the components, components, or components of the subject.

The description of the embodiments of the present invention in this application is by way of example and is not intended to limit the scope of the invention. The illustrated embodiments include various features that are not required in all embodiments of the invention. Some embodiments utilize only some of these features or possible combinations of such features. Variations of the embodiments of the invention as set forth in the Detailed Description of the Invention and the features of the various combinations described in the embodiments described herein will occur to those skilled in the art. The scope of the invention is limited to the scope of the patent application.

Claims (20)

A semiconductor device comprising: first and second electrodes respectively including first and second bus bars, wherein the first and second bus bars are reduced in cross section in opposite directions with respect to each other; and a plurality of Interleaving the first and second conductive fingers respectively extending from the first and second bus bars, the device being operable to selectively be in an on state and an off state and further operable to be in In the on state, an on current is transmitted between the first and second electrodes, wherein the first bus bar profile decreases relative to the turn-on current and the second bus bar profile is relative to the turn-on current This direction increases. . The semiconductor device of claim 1, wherein the first and second bus bar sections are proportional to the magnitude of the on current along the length of the respective bus bars. The semiconductor device of claim 2, wherein the current density of the on current remains substantially constant along the length of the first and second bus bars. The semiconductor device of claim 1, wherein the sum of the sections of the first bus bar and the second bus bar remains substantially constant at each of the lengths along the bus bars. The semiconductor device of claim 1, wherein the sections of the first and second bus bars are substantially linear along a change in their respective lengths. The semiconductor device of claim 1, wherein the change in the profile of the bus bars is achieved by changing one of the bus bar widths while the bus bar thickness remains substantially constant. The semiconductor device of claim 1, wherein the first conductive fingers are substantially parallel to each other and the second conductive fingers are substantially parallel to each other. The semiconductor device of claim 7, wherein the first and second conductive fingers are substantially parallel to each other. The semiconductor device of claim 1, wherein the sides of the first and second bus bars facing each other are substantially parallel to each other. The semiconductor device of claim 1, wherein the first and second conductive fingers have substantially the same length. The semiconductor device of claim 1, wherein the semiconductor device is a lateral diode. A semiconductor device comprising: first and second electrodes respectively including first and second bus bars, wherein the first and second bus bars are reduced in cross section in opposite directions with respect to each other; and a plurality of Interleaving the first and second conductive fingers respectively extending from the first and second bus bars, wherein the first and second electrodes are on the same epitaxial layer of one of the semiconductor substrates and do not overlap each other . The semiconductor device of claim 12, wherein the semiconductor device is a lateral diode. A semiconductor device comprising: first and second electrodes respectively including first and second bus bars, wherein the first and second bus bars are reduced in cross section in opposite directions with respect to each other; a plurality of interlaces First and second conductive fingers respectively extending from the first and second bus bars; and a plurality of third conductive fingers extending from a third bus bar And interlacing with the first and second conductive fingers such that each third conductive finger is disposed between a first conductive finger and a second conductive finger. The semiconductor device of claim 14, wherein the third conductive fingers are substantially parallel to the first and second conductive fingers. The semiconductor device of claim 15, wherein the third conductive fingers are disposed closer to the first conductive fingers than the second conductive fingers. The semiconductor device of claim 15 wherein the third conductive fingers comprise a protrusion along one of their longitudinal axes on a side facing the semiconductor substrate. The semiconductor device of claim 14, wherein the third bus bar overlaps but does not contact the base portion of the first conductive fingers. The semiconductor device of claim 18, wherein the third bus bar and the substrate of the first conductive fingers are separated by an insulating layer. The semiconductor device of claim 14, wherein the semiconductor device is a lateral FET.