TWI613247B - Photocurable composition, barrier layer including the same, and encapsulated apparatus including the same - Google Patents
Photocurable composition, barrier layer including the same, and encapsulated apparatus including the same Download PDFInfo
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- TWI613247B TWI613247B TW102107616A TW102107616A TWI613247B TW I613247 B TWI613247 B TW I613247B TW 102107616 A TW102107616 A TW 102107616A TW 102107616 A TW102107616 A TW 102107616A TW I613247 B TWI613247 B TW I613247B
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- Prior art keywords
- unsubstituted
- substituted
- barrier layer
- group
- monomer
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- 230000004888 barrier function Effects 0.000 title claims abstract description 149
- 239000000203 mixture Substances 0.000 title claims abstract description 59
- 239000000178 monomer Substances 0.000 claims abstract description 61
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 18
- 238000004806 packaging method and process Methods 0.000 claims abstract description 15
- NIXOWILDQLNWCW-UHFFFAOYSA-M acrylate group Chemical group C(C=C)(=O)[O-] NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 125000000923 (C1-C30) alkyl group Chemical group 0.000 claims description 25
- 230000005540 biological transmission Effects 0.000 claims description 19
- 239000003999 initiator Substances 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- -1 C20 diol Chemical class 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 claims description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 11
- 125000003118 aryl group Chemical group 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 10
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 9
- 125000000101 thioether group Chemical group 0.000 claims description 9
- 239000007858 starting material Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052717 sulfur Inorganic materials 0.000 claims description 7
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 6
- 125000005265 dialkylamine group Chemical group 0.000 claims description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims description 4
- 239000011669 selenium Substances 0.000 claims description 4
- 125000003282 alkyl amino group Chemical group 0.000 claims description 3
- 125000002947 alkylene group Chemical group 0.000 claims description 3
- 125000005529 alkyleneoxy group Chemical group 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 claims 2
- IRTCJFCIQKNFPP-UHFFFAOYSA-N 2-methyl-1,4-dioxane Chemical compound CC1COCCO1 IRTCJFCIQKNFPP-UHFFFAOYSA-N 0.000 claims 1
- 229910000831 Steel Inorganic materials 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 claims 1
- 150000004706 metal oxides Chemical class 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 229920002554 vinyl polymer Polymers 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 15
- 238000010943 off-gassing Methods 0.000 description 13
- 238000000016 photochemical curing Methods 0.000 description 10
- 125000000524 functional group Chemical group 0.000 description 7
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 6
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 description 4
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 4
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 4
- 239000012965 benzophenone Substances 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 125000003866 trichloromethyl group Chemical group ClC(Cl)(Cl)* 0.000 description 4
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 244000028419 Styrax benzoin Species 0.000 description 3
- 235000000126 Styrax benzoin Nutrition 0.000 description 3
- 235000008411 Sumatra benzointree Nutrition 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229960002130 benzoin Drugs 0.000 description 3
- 150000001733 carboxylic acid esters Chemical class 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000007872 degassing Methods 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 235000019382 gum benzoic Nutrition 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 3
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 3
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- INSRQEMEVAMETL-UHFFFAOYSA-N decane-1,1-diol Chemical compound CCCCCCCCCC(O)O INSRQEMEVAMETL-UHFFFAOYSA-N 0.000 description 2
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- 229920001567 vinyl ester resin Polymers 0.000 description 2
- HJIAMFHSAAEUKR-UHFFFAOYSA-N (2-hydroxyphenyl)-phenylmethanone Chemical compound OC1=CC=CC=C1C(=O)C1=CC=CC=C1 HJIAMFHSAAEUKR-UHFFFAOYSA-N 0.000 description 1
- FJKOQFIGFHTRRW-UHFFFAOYSA-N (2-methoxy-3-methylphenyl)-(3-methylphenyl)methanone Chemical compound COC1=C(C)C=CC=C1C(=O)C1=CC=CC(C)=C1 FJKOQFIGFHTRRW-UHFFFAOYSA-N 0.000 description 1
- 125000006832 (C1-C10) alkylene group Chemical group 0.000 description 1
- 125000006527 (C1-C5) alkyl group Chemical group 0.000 description 1
- 125000003161 (C1-C6) alkylene group Chemical group 0.000 description 1
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- BUZYGTVTZYSBCU-UHFFFAOYSA-N 1-(4-chlorophenyl)ethanone Chemical compound CC(=O)C1=CC=C(Cl)C=C1 BUZYGTVTZYSBCU-UHFFFAOYSA-N 0.000 description 1
- IMDHDEPPVWETOI-UHFFFAOYSA-N 1-(4-tert-butylphenyl)-2,2,2-trichloroethanone Chemical compound CC(C)(C)C1=CC=C(C(=O)C(Cl)(Cl)Cl)C=C1 IMDHDEPPVWETOI-UHFFFAOYSA-N 0.000 description 1
- VMCRQYHCDSXNLW-UHFFFAOYSA-N 1-(4-tert-butylphenyl)-2,2-dichloroethanone Chemical compound CC(C)(C)C1=CC=C(C(=O)C(Cl)Cl)C=C1 VMCRQYHCDSXNLW-UHFFFAOYSA-N 0.000 description 1
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- SLBOQBILGNEPEB-UHFFFAOYSA-N 1-chloroprop-2-enylbenzene Chemical compound C=CC(Cl)C1=CC=CC=C1 SLBOQBILGNEPEB-UHFFFAOYSA-N 0.000 description 1
- VOBUAPTXJKMNCT-UHFFFAOYSA-N 1-prop-2-enoyloxyhexyl prop-2-enoate Chemical compound CCCCCC(OC(=O)C=C)OC(=O)C=C VOBUAPTXJKMNCT-UHFFFAOYSA-N 0.000 description 1
- YIKSHDNOAYSSPX-UHFFFAOYSA-N 1-propan-2-ylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)C YIKSHDNOAYSSPX-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- ZAOMUMJENGCKAR-UHFFFAOYSA-N 2-(1-phenylbut-3-en-2-yloxy)but-3-enylbenzene Chemical compound C=1C=CC=CC=1CC(C=C)OC(C=C)CC1=CC=CC=C1 ZAOMUMJENGCKAR-UHFFFAOYSA-N 0.000 description 1
- DQMOHZLFVGYNAN-UHFFFAOYSA-N 2-(2-phenylethenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound ClC(Cl)(Cl)C1=NC(C(Cl)(Cl)Cl)=NC(C=CC=2C=CC=CC=2)=N1 DQMOHZLFVGYNAN-UHFFFAOYSA-N 0.000 description 1
- QRHHZFRCJDAUNA-UHFFFAOYSA-N 2-(4-methoxyphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound C1=CC(OC)=CC=C1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 QRHHZFRCJDAUNA-UHFFFAOYSA-N 0.000 description 1
- MPNIGZBDAMWHSX-UHFFFAOYSA-N 2-(4-methylphenyl)-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound C1=CC(C)=CC=C1C1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 MPNIGZBDAMWHSX-UHFFFAOYSA-N 0.000 description 1
- QTUVQQKHBMGYEH-UHFFFAOYSA-N 2-(trichloromethyl)-1,3,5-triazine Chemical compound ClC(Cl)(Cl)C1=NC=NC=N1 QTUVQQKHBMGYEH-UHFFFAOYSA-N 0.000 description 1
- ZJRNXDIVAGHETA-UHFFFAOYSA-N 2-[2-(3,4-dimethoxyphenyl)ethenyl]-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound C1=C(OC)C(OC)=CC=C1C=CC1=NC(C(Cl)(Cl)Cl)=NC(C(Cl)(Cl)Cl)=N1 ZJRNXDIVAGHETA-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- AAXRSWGYLGOFQP-UHFFFAOYSA-N 2-butoxy-1-(2-butoxyphenyl)ethanone Chemical compound CCCCOCC(=O)C1=CC=CC=C1OCCCC AAXRSWGYLGOFQP-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- 125000003006 2-dimethylaminoethyl group Chemical group [H]C([H])([H])N(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- MRDMGGOYEBRLPD-UHFFFAOYSA-N 2-ethoxy-1-(2-ethoxyphenyl)ethanone Chemical compound CCOCC(=O)C1=CC=CC=C1OCC MRDMGGOYEBRLPD-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- HAZQZUFYRLFOLC-UHFFFAOYSA-N 2-phenyl-4,6-bis(trichloromethyl)-1,3,5-triazine Chemical compound ClC(Cl)(Cl)C1=NC(C(Cl)(Cl)Cl)=NC(C=2C=CC=CC=2)=N1 HAZQZUFYRLFOLC-UHFFFAOYSA-N 0.000 description 1
- OKISUZLXOYGIFP-UHFFFAOYSA-N 4,4'-dichlorobenzophenone Chemical compound C1=CC(Cl)=CC=C1C(=O)C1=CC=C(Cl)C=C1 OKISUZLXOYGIFP-UHFFFAOYSA-N 0.000 description 1
- HOSGXJWQVBHGLT-UHFFFAOYSA-N 6-hydroxy-3,4-dihydro-1h-quinolin-2-one Chemical group N1C(=O)CCC2=CC(O)=CC=C21 HOSGXJWQVBHGLT-UHFFFAOYSA-N 0.000 description 1
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 1
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- NYEXSMAXCYVUNO-UHFFFAOYSA-N C1(=CC=CC=C1)P(C1=CC=CC=C1)=O.C(C1=CC=CC=C1)(=N)N Chemical compound C1(=CC=CC=C1)P(C1=CC=CC=C1)=O.C(C1=CC=CC=C1)(=N)N NYEXSMAXCYVUNO-UHFFFAOYSA-N 0.000 description 1
- 125000005915 C6-C14 aryl group Chemical group 0.000 description 1
- WWONAUQZINJBJQ-UHFFFAOYSA-N COC(C1=CC=CC=C1)=O.C(C1=CC=CC=C1)(=N)N Chemical compound COC(C1=CC=CC=C1)=O.C(C1=CC=CC=C1)(=N)N WWONAUQZINJBJQ-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 230000005526 G1 to G0 transition Effects 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- VSMKVYMEPNUODT-UHFFFAOYSA-N benzenecarboximidamide;benzoic acid Chemical compound NC(=[NH2+])C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 VSMKVYMEPNUODT-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 1
- 229940060799 clarus Drugs 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- MGNCLNQXLYJVJD-UHFFFAOYSA-N cyanuric chloride Chemical compound ClC1=NC(Cl)=NC(Cl)=N1 MGNCLNQXLYJVJD-UHFFFAOYSA-N 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 125000000592 heterocycloalkyl group Chemical group 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- LNMQRPPRQDGUDR-UHFFFAOYSA-N hexyl prop-2-enoate Chemical compound CCCCCCOC(=O)C=C LNMQRPPRQDGUDR-UHFFFAOYSA-N 0.000 description 1
- 125000004356 hydroxy functional group Chemical group O* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- OEIJHBUUFURJLI-UHFFFAOYSA-N octane-1,8-diol Chemical compound OCCCCCCCCO OEIJHBUUFURJLI-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- WKGDNXBDNLZSKC-UHFFFAOYSA-N oxido(phenyl)phosphanium Chemical compound O=[PH2]c1ccccc1 WKGDNXBDNLZSKC-UHFFFAOYSA-N 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- LYXOWKPVTCPORE-UHFFFAOYSA-N phenyl-(4-phenylphenyl)methanone Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1C(=O)C1=CC=CC=C1 LYXOWKPVTCPORE-UHFFFAOYSA-N 0.000 description 1
- 229960005235 piperonyl butoxide Drugs 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HJWLCRVIBGQPNF-UHFFFAOYSA-N prop-2-enylbenzene Chemical compound C=CCC1=CC=CC=C1 HJWLCRVIBGQPNF-UHFFFAOYSA-N 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012086 standard solution Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- GRXOWOKLKIZFNP-UHFFFAOYSA-N undecane-1,1-diol Chemical compound CCCCCCCCCCC(O)O GRXOWOKLKIZFNP-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- KOZCZZVUFDCZGG-UHFFFAOYSA-N vinyl benzoate Chemical compound C=COC(=O)C1=CC=CC=C1 KOZCZZVUFDCZGG-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
- H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
本案揭示了一種光固化組合物,該光固化組合物包含(A)光固化單體和(B)含矽單體或其低聚物,其中,含矽單體由式1表示。本案亦揭示了包含該光固化組合物的阻擋層,以及包含該阻擋層的封裝裝置。 The present invention discloses a photocurable composition comprising (A) a photocurable monomer and (B) a ruthenium containing monomer or an oligomer thereof, wherein the ruthenium containing monomer is represented by Formula 1. Also disclosed in the present invention is a barrier layer comprising the photocurable composition, and a packaging device comprising the barrier layer.
Description
本發明涉及一種光固化組合物、包含其的阻擋層以及包括該阻擋層的封裝裝置。 The present invention relates to a photocurable composition, a barrier layer comprising the same, and a packaging device comprising the barrier layer.
有機發光二極體(OLED)是指一種在陽極和陰極之間插入之功能性有機材料層的結構,其中可以藉由注入陰極的電洞和注入陽極的電子的再結合來產生具有高能量的激子。產生的激子可以在基態下躍遷,從而在特定波長帶內發光。有機發光二極體具有多種優點如自發光、快速回應、寬視角、超薄、高清晰度和耐久性。 An organic light emitting diode (OLED) refers to a structure of a functional organic material layer interposed between an anode and a cathode, wherein a high energy can be generated by recombination of a hole injected into the cathode and electrons injected into the anode. Excitons. The generated excitons can transition in the ground state to emit light in a specific wavelength band. Organic light-emitting diodes have various advantages such as self-illumination, fast response, wide viewing angle, ultra-thin, high definition and durability.
然而,有機發光二極體具有以下問題:由於儘管已經密封但從外側流入的水分或氧氣或在發光二極體的內部或外部產生的釋氣(除氣,outgas),有機材料和/或電極材料會被氧化,引起其性能和壽命的劣化。為了克服這樣的問題,已提出一些方法,例如塗布光固化密封劑,附著透明的或不透明的水分吸收劑,或對在其上形成有機發光部分的基 板提供玻璃料。 However, the organic light-emitting diode has a problem in that due to moisture or oxygen flowing in from the outside or outgas (outgas) generated inside or outside the light-emitting diode, organic material and/or electrode, although sealed. The material will be oxidized, causing deterioration in its performance and life. In order to overcome such problems, methods have been proposed, such as coating a photocurable sealant, attaching a transparent or opaque moisture absorbent, or a base on which an organic light-emitting portion is formed. The board provides frit.
根據本發明的一個方面,光固化組合物可以包含:(A)光固化單體和(B)含矽單體或其低聚物,其中含矽單體係由式1表示:
其中X1和X2是相同或不同的並且是O、S、N-H或N-R';R'是取代或未取代的C1-C20烷基;R1和R2是相同或不同的並且是單鍵、取代或未取代的C1-C20伸烷基、取代或未取代的C1-C30烷基醚基團、取代或未取代的C1-C30烷基胺基團、取代或未取代的C1-C30烷基硫化物基團、取代或未取代的C6-C30伸芳基、取代或未取代的C7-C30芳基伸烷基、或取代或未取代的C1-C20伸烷氧基;以及Y1、Y2、Y3、Y4、Y5和Y6是相同或不同的並且是氫、取代或未取代的C1-C30烷基、取代或未取代的C1-C30烷基醚基團、取代或未取代的C1-C30二烷基胺基團、取代或未取代的C1-C30烷基硫化物基團、取代或未取代的C6-C30芳基、取代或未取代的C7-C30芳烷基、取代或未取代的C1-C30伸烷基、取代或未取代的C1-C30伸烷氧基,或由式2或式3表示的化合物:
[式2]
其中*表示在式1中Si的結合部位;R3、R4、R5、R6、R7和R8是相同或不同的並且是氫、取代或未取代的C1-C30烷基、取代或未取代的C1-C30烷基醚基團、取代或未取代的C1-C30二烷基胺基團、取代或未取代的C1-C30烷基硫化物基團、取代或未取代的C6-C30芳基、或取代或未取代的C7-C30芳基烷基;X3是O、S、N-H、或N-R';R'是取代或未取代的C1-C20烷基;以及Z1和Z2是相同或不同的,以及是由式4表示的化合物:
其中*表示在式1中R1或R2的結合部位,R9是氫、或取代或未取代的C1-C30烷基;以及n是約0至30的整數或n的平均值在約0至30之範圍。 Wherein * represents a binding site of R 1 or R 2 in Formula 1, R 9 is hydrogen, or a substituted or unsubstituted C1-C30 alkyl group; and n is an integer of about 0 to 30 or an average value of n is about 0. To the extent of 30.
根據本發明的另一個方面,封裝裝置可以包括裝置的構件和阻擋疊層(barrier stack),該阻擋疊層係形成在裝置的構件上並且包括無機阻擋層和有機阻擋層,其中有機阻擋層具有約2000 ppm以下的釋氣(除氣)生成量。 According to another aspect of the present invention, a packaging device may include a member of a device and a barrier stack formed on a member of the device and including an inorganic barrier layer and an organic barrier layer, wherein the organic barrier layer has The amount of outgassing (degassing) produced below about 2000 ppm.
根據本發明進一步的方面,封裝裝置可以包括用於裝置的構件和阻擋疊層,其形成在裝置的構件上並且包括無機阻擋層和有機阻擋層,其中有機阻擋層具有約4.0 g/m2.24小時以下的水蒸汽傳遞(透過)速率(WVTR),如在有機阻擋層的層厚度為5μm下並在37.8℃和100%相對濕度(RH)下24小時所測得者。 According to a further aspect of the invention, a packaging device may comprise a member for a device and a barrier laminate formed on a component of the device and comprising an inorganic barrier layer and an organic barrier layer, wherein the organic barrier layer has a thickness of about 4.0 g/m 2 . The water vapor transmission (transmission) rate (WVTR) below 24 hours, as measured at a layer thickness of 5 μm in the organic barrier layer and at 24 ° C at 37.8 ° C and 100% relative humidity (RH).
10‧‧‧基板 10‧‧‧Substrate
20‧‧‧裝置的構件 20‧‧‧ components of the device
30‧‧‧阻擋疊層 30‧‧‧Block stack
31‧‧‧無機阻擋層 31‧‧‧Inorganic barrier
32‧‧‧有機阻擋層 32‧‧‧Organic barrier
40‧‧‧內部空間 40‧‧‧Internal space
100、200‧‧‧封裝裝置 100,200‧‧‧Package
圖1是根據本發明的一種實施方式的封裝裝置的截面圖。 1 is a cross-sectional view of a packaging device in accordance with an embodiment of the present invention.
圖2是根據本發明的另一種實施方式的封裝裝置的截面圖。 2 is a cross-sectional view of a packaging device in accordance with another embodiment of the present invention.
除非另有說明,如在本文中所使用的,術語“取代的”是指,在本發明的官能基中的至少一個氫原子被下述基團取代:鹵素(F、Cl、Br或I),羥基,硝基,氰基,亞胺基(=NH、=NR,其中R是C1-C10烷基),胺基[-NH2、-NH(R')、-N(R")(R"'),其中R'、R"和R'''各自獨立地為C1-C10烷基],脒基,肼或腙基團,羧酸基團,取代或未取代的C1-C20烷基,取代或未取代的C6-C30芳基,取代或未取代的C3-C30環烷基,取代或未取代的C3-C30雜芳基,或取代或未取代的C2-C30雜環烷基。 The term "substituted" as used herein, unless otherwise indicated, means that at least one hydrogen atom in the functional group of the present invention is substituted by a halogen (F, Cl, Br or I). , hydroxy, nitro, cyano, imino (=NH, =NR, wherein R is C1-C10 alkyl), amine [-NH2, -NH(R'), -N(R")(R "'), wherein R', R" and R''' are each independently a C1-C10 alkyl], fluorenyl, hydrazine or hydrazine group, a carboxylic acid group, a substituted or unsubstituted C1-C20 alkyl group a substituted or unsubstituted C6-C30 aryl group, a substituted or unsubstituted C3-C30 cycloalkyl group, a substituted or unsubstituted C3-C30 heteroaryl group, or a substituted or unsubstituted C2-C30 heterocycloalkyl group.
如在本文中所使用的,術語“雜”是指,碳原子被選自由N、O、S和P組成的組中的原子取代。 As used herein, the term "hetero" refers to a carbon atom substituted with an atom selected from the group consisting of N, O, S, and P.
如在本文中所使用的,符號“*”是元素的連接部位。 As used herein, the symbol "*" is the joint of an element.
本發明的一個方面涉及光固化組合物,其包含(A)光固化單體,和(B)含矽單體或其低聚物。 One aspect of the present invention relates to a photocurable composition comprising (A) a photocurable monomer, and (B) a ruthenium containing monomer or an oligomer thereof.
(A)光固化單體 (A) Photocuring monomer
光固化單體可以指非矽型光固化單體,其並不包含矽並且具有一種或多種光固化官能基,例如,(甲基)丙烯酸酯基團、乙烯基等。 The photocurable monomer may refer to a non-fluorene-type photocurable monomer that does not contain hydrazine and has one or more photocurable functional groups, for example, (meth) acrylate groups, vinyl groups, and the like.
光固化單體可以包括單官能單體、多官能單體、和其等之混合物,其可以具有一種或多種光固化官能基,如不飽和基團。光固化單體可以包括如下述的單體:其具有約1至30、較佳為約1至20、更佳為約1至5種光固化官能基。光固化官能基可以包括取代或未取代的乙烯基、丙烯酸酯基團、或甲基丙烯酸酯基團。 The photocurable monomer may comprise a mixture of a monofunctional monomer, a polyfunctional monomer, and the like, which may have one or more photocurable functional groups, such as an unsaturated group. The photocurable monomer may comprise a monomer having from about 1 to 30, preferably from about 1 to 20, more preferably from about 1 to 5 photocurable functional groups. The photocurable functional group may include a substituted or unsubstituted vinyl group, an acrylate group, or a methacrylate group.
光固化單體可以包括單官能單體和多官能單體的混合物。在混合物中,單官能單體:多官能單體可以約1:0.1至約1:10,較佳為約1:0.5至約1:3.5之重量比存在。 The photocurable monomer may include a mixture of a monofunctional monomer and a polyfunctional monomer. In the mixture, the monofunctional monomer:polyfunctional monomer may be present in a weight ratio of from about 1:0.1 to about 1:10, preferably from about 1:0.5 to about 1:3.5.
光固化單體的實例可以包括具有取代或未取代的乙烯基的C6-C20芳族化合物;不飽和羧酸酯,其具有一種或多種C1-C20烷基、C3-C20環烷基、C6-C20芳族基團、或羥基和C1-C20烷基;具有C1-C20胺基烷基的不飽和羧酸酯;C1-C20飽和或不飽和羧酸的乙烯基酯;C1-C20不飽和羧酸縮水甘油酯;乙烯基氰化物;不飽和醯胺化合物;一元醇或多元醇的單官能或多官能(甲基)丙烯酸酯等。'多元醇'是指如下述的醇:其具有兩個或多個,約2至20個、較佳為約2 至10個、更佳為約2至6個羥基。 Examples of the photocurable monomer may include a C6-C20 aromatic compound having a substituted or unsubstituted vinyl group; an unsaturated carboxylic acid ester having one or more C1-C20 alkyl groups, a C3-C20 cycloalkyl group, C6- a C20 aromatic group, or a hydroxyl group and a C1-C20 alkyl group; an unsaturated carboxylic acid ester having a C1-C20 aminoalkyl group; a vinyl ester of a C1-C20 saturated or unsaturated carboxylic acid; a C1-C20 unsaturated carboxylic acid Acid glycidyl ester; vinyl cyanide; unsaturated decylamine compound; monofunctional or polyfunctional (meth) acrylate of monohydric or polyhydric alcohol, and the like. 'Polyol' means an alcohol as follows: it has two or more, about 2 to 20, preferably about 2 Up to 10, more preferably about 2 to 6 hydroxyl groups.
在一些實施方式中,光固化單體的實例可以包括但不限於具有烯基(包括乙烯基)的C6-C20芳族化合物如苯乙烯、α-甲基苯乙烯、乙烯基甲苯、乙烯基苄基醚、乙烯基苄基甲基醚等;不飽和羧酸酯如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸-2-羥基乙酯、(甲基)丙烯酸-2-羥基丁酯、(甲基)丙烯酸己酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸環己基酯、(甲基)丙烯酸苄基酯、(甲基)丙烯酸苯基酯等;不飽和羧酸胺基烷基酯如(甲基)丙烯酸-2-胺基乙基酯、(甲基)丙烯酸-2-二甲基胺基乙基酯等;飽和或不飽和羧酸乙烯基酯如乙酸乙烯酯、苯甲酸乙烯酯等;C1-C20不飽和羧酸縮水甘油酯如(甲基)丙烯酸縮水甘油酯等;乙烯基氰化物化合物如(甲基)丙烯腈等;不飽和醯胺化合物如(甲基)丙烯醯胺等;一元醇或多元醇的單官能或多官能(甲基)丙烯酸酯,如乙二醇二(甲基)丙烯酸酯、三乙二醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、辛二醇二(甲基)丙烯酸酯、壬二醇二(甲基)丙烯酸酯、癸二醇二(甲基)丙烯酸酯、十一烷二醇二(甲基)丙烯酸酯、十二烷二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇二(甲基)丙烯酸酯、二季戊四醇 三(甲基)丙烯酸酯、二季戊四醇四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、雙酚A二(甲基)丙烯酸酯、酚醛環氧(甲基)丙烯酸酯、二乙二醇二(甲基)丙烯酸酯、三(丙二醇)二(甲基)丙烯酸酯、聚(丙二醇)二(甲基)丙烯酸酯等。 In some embodiments, examples of the photocurable monomer may include, but are not limited to, a C6-C20 aromatic compound having an alkenyl group (including a vinyl group) such as styrene, α-methylstyrene, vinyltoluene, vinylbenzyl chloride. Ether ether, vinylbenzyl methyl ether, etc.; unsaturated carboxylic acid esters such as methyl (meth)acrylate, ethyl (meth)acrylate, butyl (meth)acrylate, (meth)acrylic acid-2- Hydroxyethyl ester, 2-hydroxybutyl (meth)acrylate, hexyl (meth)acrylate, octyl (meth)acrylate, decyl (meth)acrylate, decyl (meth)acrylate, (A) Ethyl undecyl acrylate, dodecyl (meth) acrylate, cyclohexyl (meth) acrylate, benzyl (meth) acrylate, phenyl (meth) acrylate, etc.; unsaturated Aminoalkyl carboxylates such as 2-aminoethyl (meth)acrylate, 2-dimethylaminoethyl (meth)acrylate, etc.; saturated or unsaturated carboxylic acid vinyl esters such as Vinyl acetate, vinyl benzoate, etc.; C1-C20 unsaturated glycidyl carboxylate such as glycidyl (meth)acrylate; vinyl cyanide compound such as (meth)acrylonitrile An unsaturated decylamine compound such as (meth) acrylamide or the like; a monofunctional or polyfunctional (meth) acrylate of a monohydric or polyhydric alcohol, such as ethylene glycol di(meth)acrylate, triethylene glycol II (Meth) acrylate, trimethylolpropane tri(meth) acrylate, 1,4-butanediol di(meth) acrylate, 1,6-hexanediol di(meth) acrylate, Octanediol di(meth)acrylate, decanediol di(meth)acrylate, decanediol di(meth)acrylate, undecanediol di(meth)acrylate, dodecane two Alcohol di(meth)acrylate, neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol Di(meth)acrylate, dipentaerythritol Tris(meth)acrylate, dipentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, bisphenol A di(meth)acrylate, phenolic Epoxy (meth) acrylate, diethylene glycol di (meth) acrylate, tri (propylene glycol) di (meth) acrylate, poly (propylene glycol) di (meth) acrylate, and the like.
較佳地,光固化單體可以包括以下各項中的至少一種:具有C1-C20烷基的單(甲基)丙烯酸酯、C2-C20二醇的二(甲基)丙烯酸酯、C3-C20三醇的三(甲基)丙烯酸酯、和C4-C20四醇的四(甲基)丙烯酸酯。 Preferably, the photocurable monomer may include at least one of the following: a mono(meth)acrylate having a C1-C20 alkyl group, a di(meth)acrylate of a C2-C20 diol, and a C3-C20 Tri(meth) acrylate of triol, and tetra (meth) acrylate of C4-C20 tetraol.
就固體含量而言並基於100重量份的(A)+(B),光固化單體的存在量可以為約1至99重量份。較佳地,光固化單體的存在量可以為約20至95重量份,更佳為約30至95重量份,又更佳為約30至65重量份。在此範圍內,光固化組合物可以表現出對等離子體的較強的耐性,從而在薄封裝層的製造中降低或防止自等離子體中的釋氣(除氣)生成或降低水蒸汽傳遞(透過)速率。 The photocurable monomer may be present in an amount of from about 1 to 99 parts by weight in terms of solid content and based on 100 parts by weight of (A) + (B). Preferably, the photocurable monomer is present in an amount of from about 20 to 95 parts by weight, more preferably from about 30 to 95 parts by weight, still more preferably from about 30 to 65 parts by weight. Within this range, the photocurable composition can exhibit strong resistance to plasma, thereby reducing or preventing outgassing (degassing) generation or reduction of water vapor transmission from the plasma in the manufacture of the thin encapsulation layer ( Through) rate.
(B)含矽單體或其低聚物 (B) cerium-containing monomer or oligomer thereof
含矽單體或其低聚物可以是矽型光固化單體或其低聚物,其在兩端包含矽(Si)和光固化官能基。光固化官能基可以包括取代或未取代的乙烯基、丙烯酸酯基團、或甲基丙烯酸酯基團。 The ruthenium containing monomer or oligomer thereof may be a ruthenium type photocurable monomer or an oligomer thereof, which contains ruthenium (Si) and photocurable functional groups at both ends. The photocurable functional group may include a substituted or unsubstituted vinyl group, an acrylate group, or a methacrylate group.
單體或其低聚物可以包括雙端可固化單體或其低聚物。 The monomer or oligomer thereof may include a double-end curable monomer or an oligomer thereof.
在一種實施方式中,含矽單體可以由式1表示:
其中X1和X2是相同或不同的,並且是O、S、N-H或N-R';R'是取代或未取代的C1-C20烷基;R1和R2是相同或不同的並且是單鍵、取代或未取代的C1-C20伸烷基、取代或未取代的C1-C30烷基醚基團、取代或未取代的C1-C30烷基胺基團、取代或未取代的C1-C30烷基硫化物基團、取代或未取代的C6-C30伸芳基、取代或未取代的C7-C30芳基伸烷基、或取代或未取代的C1-C20伸烷氧基;以及Y1、Y2、Y3、Y4、Y5和Y6是相同或不同的,並且是氫、取代或未取代的C1-C30烷基、取代或未取代的C1-C30烷基醚基團、取代或未取代的C1-C30二烷基胺基團、取代或未取代的C1-C30烷基硫化物基團、取代或未取代的C6-C30芳基、取代或未取代的C7-C30芳烷基、取代或未取代的C1-C30伸烷基、取代或未取代的C1-C30伸烷氧基,或由式2或式3表示的化合物:
其中*表示在式1中Si的結合部位;R3、R4、R5、R6、R7和R8是相同或不同的,並且是氫、取代或未取代的C1-C30烷基、取代或未取代的C1-C30烷基醚基團、取代或未取代的C1-C30二烷基胺基團、取代或未取代的C1-C30烷基硫化物基團、取代或未取代的C6-C30芳基、或取代或未取代的C7-C30芳基烷基;X3是O、S、N-H、或N-R';R'是取代或未取代的C1-C20烷基;以及Z1和Z2是相同或不同的,並且是由式4表示的化合物:
其中*表示在式1中R1或R2的結合部位,R9是氫、或取代或未取代的C1-C30烷基;以及n是約0至30的整數或n的平均值為約0至30。 Wherein * represents a binding site of R 1 or R 2 in Formula 1, R 9 is hydrogen, or a substituted or unsubstituted C1-C30 alkyl group; and n is an integer of about 0 to 30 or an average value of n is about 0. To 30.
在此範圍內,可以降低在組合物固化以後的水蒸汽傳遞速率和釋氣(除氣)生成量,以及可以增加光固化率。較佳地,n可以是約0至15,更佳為約0至10。 Within this range, the water vapor transmission rate and the amount of outgassing (degassing) generated after the composition is cured can be lowered, and the photocuring rate can be increased. Preferably, n may be from about 0 to 15, more preferably from about 0 to 10.
R1和R2較佳可為C1-C10伸烷基,更佳為C1-C6伸烷基。 R 1 and R 2 may be preferably C1-C10 alkylene, more preferably C1-C6 alkylene group.
Y1、Y2、Y3、Y4、Y5和Y6較佳可為C1-C10烷基、C6-C14芳基,或由式2或式3表示的化合物,其中R3、R4、R5、R6、R7和R8是C1-C10烷基。更佳地,Y1、Y2、Y3、Y4、Y5和Y6可以是C1-C6烷基,或由式2或式3表示的化合物,其中R3、R4、R5、R6、R7和R8是C1-C6烷基。 Y 1 , Y 2 , Y 3 , Y 4 , Y 5 and Y 6 may preferably be a C1-C10 alkyl group, a C6-C14 aryl group, or a compound represented by Formula 2 or Formula 3, wherein R 3 and R 4 And R 5 , R 6 , R 7 and R 8 are a C1-C10 alkyl group. More preferably, Y 1 , Y 2 , Y 3 , Y 4 , Y 5 and Y 6 may be a C1-C6 alkyl group, or a compound represented by Formula 2 or Formula 3, wherein R 3 , R 4 , R 5 , R 6 , R 7 and R 8 are C1-C6 alkyl groups.
Z1和Z2可以是由式4表示的化合物,其中R9是氫或 C1-C5烷基。 Z 1 and Z 2 may be a compound represented by Formula 4, wherein R 9 is hydrogen or a C1-C5 alkyl group.
在一種實施方式中,含矽單體可以包括以下各項中的至少一種:1,3-二(3-(甲基)丙烯醯氧基丙基)四甲基二矽氧烷、1,3-二(3-(甲基)丙烯醯氧基丙基)四(三甲基矽烷氧基)二矽氧烷和式5的單體:
其中Z1、Z2、R1、R2和n是如在式1中所定義者。 Wherein Z 1 , Z 2 , R 1 , R 2 and n are as defined in formula 1.
包括在光固化組合物中的含矽單體或其低聚物連同光固化單體一起可以得到層,在固化以後其水蒸汽傳遞(透過)速率和釋氣生成量顯著降低,從而增加光固化率。 The ruthenium-containing monomer or oligomer thereof included in the photocurable composition together with the photocurable monomer can provide a layer, and after curing, its water vapor transmission (transmission) rate and outgassing amount are remarkably lowered, thereby increasing photocuring. rate.
另外,由於矽的存在,包括在有機阻擋層中的含矽單體或其低聚物可以最大限度地減少來自等離子體的設備損傷,其中該等離子體用於在現有的封裝結構(其是無機阻擋層和有機阻擋層)中沉積無機阻擋層。 In addition, due to the presence of germanium, the germanium-containing monomer or oligomer thereof included in the organic barrier layer can minimize damage to the device from the plasma, wherein the plasma is used in an existing package structure (which is inorganic An inorganic barrier layer is deposited in the barrier layer and the organic barrier layer.
就固體含量而言並基於100重量份的組合物的(A)+(B),含矽單體或其低聚物的存在量可以為約1至99重量份。較佳地,含矽單體或其低聚物的存在量可以為約5至80重量份,更佳為約5至70重量份,又更佳為約35至70重量份。在此範圍內,光固化組合物可以表現出對等離子體的強的耐性,從而在薄封裝層的製備中降低或防止自等離子體中的釋氣生成或降低水蒸汽傳遞(透過)速率。 The ruthenium containing monomer or oligomer thereof may be present in an amount of from about 1 to 99 parts by weight, based on 100 parts by weight of the composition of (A) + (B). Preferably, the ruthenium containing monomer or oligomer thereof is present in an amount of from about 5 to 80 parts by weight, more preferably from about 5 to 70 parts by weight, still more preferably from about 35 to 70 parts by weight. Within this range, the photocurable composition can exhibit strong resistance to plasma, thereby reducing or preventing outgassing from the plasma or reducing the rate of water vapor transmission (transmission) in the preparation of the thin encapsulation layer.
組合物可以進一步包含起始劑。 The composition may further comprise an initiator.
(C)起始劑 (C) initiator
作為起始劑,可以使用但不限於任何習知光聚合起始劑,只要起始劑可進行光固化反應。例如,光聚合起始劑可以包括基於三嗪、苯乙酮、苯甲酮、噻吨酮(thioxanthone)、苯偶姻、磷、肟的起始劑,以及其等之混合物。 As the initiator, any conventional photopolymerization initiator can be used without being limited as long as the initiator can be photocured. For example, the photopolymerization initiator may include a starter based on triazine, acetophenone, benzophenone, thioxanthone, benzoin, phosphorus, ruthenium, and the like.
三嗪起始劑的實例可以包括2,4,6-三氯-s-三嗪、2-苯基-4,6-二(三氯甲基)-s-三嗪、2-(3',4'-二甲氧基苯乙烯基)-4,6-二(三氯甲基)-s-三嗪、2-(4'-甲氧基萘基)-4,6-二(三氯甲基)-s-三嗪、2-(對甲氧基苯基)-4,6-二(三氯甲基)-s-三嗪、2-(對甲苯基)-4,6-二(三氯甲基)-s-三嗪、2-聯苯基-4,6-二(三氯甲基)-s-三嗪、二(三氯甲基)-6-苯乙烯基-s-三嗪、2-(萘甲醯-1-基)-4,6-二(三氯甲基)-s-三嗪(2-(naphtho-1-yl)-4,6-bis(trichloromethyl)-s-triazine)、2-(4-甲氧基萘甲醯-1-基)-4,6-二(三氯甲基)-s-三嗪(2-(4-methoxynaphtho-1-yl)-4,6-bis(trichloromethyl)-s-triazine)、2,4-三氯甲基(胡椒基(piperonyl))-6-三嗪、2,4-(三氯甲基(4'-甲氧基苯乙烯基)-6-三嗪、以及其等之混合物。 Examples of the triazine initiator may include 2,4,6-trichloro-s-triazine, 2-phenyl-4,6-di(trichloromethyl)-s-triazine, 2-(3' , 4'-dimethoxystyryl)-4,6-bis(trichloromethyl)-s-triazine, 2-(4'-methoxynaphthyl)-4,6-di(III Chloromethyl)-s-triazine, 2-(p-methoxyphenyl)-4,6-di(trichloromethyl)-s-triazine, 2-(p-tolyl)-4,6- Bis(trichloromethyl)-s-triazine, 2-biphenyl-4,6-di(trichloromethyl)-s-triazine, di(trichloromethyl)-6-styryl- S-triazine, 2-(naphthoquinone-1-yl)-4,6-di(trichloromethyl)-s-triazine (2-(naphtho-1-yl)-4,6-bis ( Trichloromethyl)-s-triazine), 2-(4-methoxynaphthoquinone-1-yl)-4,6-bis(trichloromethyl)-s-triazine (2-(4-methoxynaphtho-1) -yl)-4,6-bis(trichloromethyl)-s-triazine), 2,4-trichloromethyl (piperonyl)-6-triazine, 2,4-(trichloromethyl (4) '-Methoxystyryl)-6-triazine, and mixtures thereof.
苯乙酮起始劑的實例可以包括2,2'-二乙氧基苯乙酮、2,2'-二丁氧基苯乙酮、2-羥基-2-甲基苯丙酮、對叔丁基三氯苯乙酮、對叔丁基二氯苯乙酮、4-氯苯乙酮、2,2'-二氯-4-苯氧基苯乙酮、2-甲基-1-(4-(甲硫基)苯基)-2-啉代丙-1-酮、2-苄基-2-二甲基胺基-1-(4-啉代苯基)-丁-1-酮、以及其等之混合物。 Examples of the acetophenone starter may include 2,2'-diethoxyacetophenone, 2,2'-dibutoxyacetophenone, 2-hydroxy-2-methylpropiophenone, and p-tert-butyl Trichloroacetophenone, p-tert-butyldichloroacetophenone, 4-chloroacetophenone, 2,2'-dichloro-4-phenoxyacetophenone, 2-methyl-1-(4) -(methylthio)phenyl)-2- Phenylpropan-1-one, 2-benzyl-2-dimethylamino-1-(4- Orthophenylene)-butan-1-one, and mixtures thereof.
苯甲酮起始劑的實例可以包括苯甲酮、苯甲醯苯甲酸、苯甲醯苯甲酸甲基酯、4-苯基苯甲酮、羥基苯甲酮、丙烯酸酯化苯甲酮、4,4'-二(二甲基胺基)苯甲酮、4,4'-二氯苯甲酮、3,3'-二甲基-2-甲氧基苯甲酮、以及其等之混合物。 Examples of the benzophenone initiator may include benzophenone, benzamidine benzoic acid, benzamidine benzoic acid methyl ester, 4-phenyl benzophenone, hydroxybenzophenone, acrylated benzophenone, 4 , 4'-bis(dimethylamino)benzophenone, 4,4'-dichlorobenzophenone, 3,3'-dimethyl-2-methoxybenzophenone, and mixtures thereof .
噻吨酮起始劑的實例可以包括噻吨酮、2-甲基噻吨酮、異丙基噻吨酮、2,4-二乙基噻吨酮、2,4-二異丙基噻吨酮、2-氯噻吨酮、以及其等之混合物。 Examples of the thioxanthone starter may include thioxanthone, 2-methylthioxanthone, isopropylthioxanthone, 2,4-diethylthioxanthone, 2,4-diisopropylthioxanthene Ketones, 2-chlorothioxanthone, and mixtures thereof.
苯偶姻起始劑的實例可以包括苯偶姻、苯偶姻甲基醚、苯偶姻乙基醚、苯偶姻異丙基醚、苯偶姻異丁基醚、苄基二甲基縮酮、以及其等之混合物。 Examples of the benzoin starter may include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzyldimethyl group. Ketones, and mixtures thereof.
磷起始劑的實例可以包括二苯甲醯苯基氧化膦、苯甲醯二苯基氧化膦、以及其等之混合物。 Examples of the phosphorus initiator may include benzhydrin phenylphosphine oxide, benzamidine diphenylphosphine oxide, and the like.
肟起始劑的實例可以包括2-(鄰苯甲醯肟)-1-[4-(苯硫基)苯基]-1,2-辛二酮、1-(鄰乙醯基肟)-1-[9-乙基-6-(2-甲基苯甲醯)-9H-咔唑-3-基]乙酮、以及其等之混合物。 Examples of the hydrazine initiator may include 2-(o-benzamide)-1-[4-(phenylthio)phenyl]-1,2-octanedione, 1-(o-ethylindenyl)- 1-[9-Ethyl-6-(2-methylbenzhydrazin)-9H-indazol-3-yl]ethanone, and mixtures thereof.
就固體含量而言並基於在光固化組合物中100重量份的(A)+(B),起始劑的存在量可以為約0.1至20重量份。在此範圍內,在暴露於光下可以充分呈現光聚合並且可以防止在光聚合以後由於剩餘的未反應的起始劑傳遞的減少。較佳地,起始劑的存在量可以為約0.5至10重量份,更佳為約1至8重量份。 The initiator may be present in an amount of from about 0.1 to 20 parts by weight, based on the solid content and based on 100 parts by weight of (A) + (B) in the photocurable composition. Within this range, photopolymerization can be sufficiently exhibited under exposure to light and a decrease in the transfer of remaining unreacted starter after photopolymerization can be prevented. Preferably, the initiator is present in an amount of from about 0.5 to 10 parts by weight, more preferably from about 1 to 8 parts by weight.
可以藉由混合光固化單體、含矽單體或其低聚物、或另外的起始劑來產生光固化組合物。較佳地,組合物可以產生為無溶劑組合物,其不需要使用溶劑。 The photocurable composition can be produced by mixing a photocurable monomer, a ruthenium containing monomer or an oligomer thereof, or an additional initiator. Preferably, the composition can be produced as a solventless composition which does not require the use of a solvent.
光固化組合物可以呈現約90%以上的光固化率(photocuring rate)。在此範圍內,在固化光固化組合物以後,固化收縮應力較低,從而形成不產生任何變化的層,使得能夠用於密封應用。較佳地,光固化率可以為約90至99%,更佳為約92至98.5%。 The photocurable composition can exhibit a photocuring rate of about 90% or more. Within this range, after curing the photocurable composition, the curing shrinkage stress is low, thereby forming a layer that does not cause any change, enabling use in sealing applications. Preferably, the photocuring rate may be from about 90 to 99%, more preferably from about 92 to 98.5%.
由於周圍環境中的氣體或液體,例如,在大氣中的氧和/或水分和/或蒸汽,且由於用於處理電子產品的化學物質的滲透,裝置的構件,尤其是顯示器的構件,會遭受品質的退化或劣化。為避免此問題,必須密封或封裝裝置的構件。 Due to the gas or liquid in the surrounding environment, for example, oxygen and/or moisture and/or steam in the atmosphere, and due to the penetration of chemicals used to treat electronic products, the components of the device, especially the components of the display, suffer Degradation or deterioration of quality. To avoid this problem, the components of the device must be sealed or packaged.
裝置的此類構件可以包括但不限於有機發光二極體(OLED)、照明裝置、可撓性有機發光二極體顯示器、金屬傳感墊、微盤雷射器、電致變色器件(裝置)、光致變色器件(裝置)、微機電系統、太陽能電池、積體電路、電荷耦合裝置、發光聚合物、發光二極體等。 Such components of the device may include, but are not limited to, an organic light emitting diode (OLED), a lighting device, a flexible organic light emitting diode display, a metal sensing pad, a microdisk laser, an electrochromic device (device) , Photochromic devices (devices), MEMS, solar cells, integrated circuits, charge coupled devices, luminescent polymers, light-emitting diodes, and the like.
光固化組合物可以用於形成有機阻擋層以用於可撓性顯示器的密封或封裝。 The photocurable composition can be used to form an organic barrier layer for sealing or encapsulation of a flexible display.
本發明的另一方面涉及阻擋層,其是有機阻擋層並具有約2000 ppm以下的釋氣生成量。在此範圍內,當施加於裝置的構件時阻擋層具有可忽略的影響並確保裝置的構件的非常長的壽命。較佳地,釋氣生成量可以為約10至2000 ppm,更佳為約570至1720 ppm。 Another aspect of the invention relates to a barrier layer which is an organic barrier layer and has a outgassing amount of about 2000 ppm or less. Within this range, the barrier layer has a negligible effect when applied to the components of the device and ensures a very long life of the components of the device. Preferably, the outgas production amount may be from about 10 to 2000 ppm, more preferably from about 570 to 1720 ppm.
本發明進一步的方面涉及阻擋層,其是有機阻擋層並具有約4.0 g/m2.24小時以下的水蒸汽傳遞(透過)速率,如在 5 μm的層厚度下在37.8℃和100%的RH下24小時測得的。在此範圍內,阻擋層可以用來密封裝置的構件。較佳地,水蒸汽傳遞速率可以為約1.0至4.0 g/m2.24小時,更佳為約1.9至3.5 g/m2.24小時。 A further aspect of the invention relates to a barrier layer which is an organic barrier layer and has a thickness of about 4.0 g/m 2 . The water vapor transmission (permeation) rate below 24 hours, as measured at a layer thickness of 5 μm at 37.8 ° C and 100% RH for 24 hours. Within this range, a barrier layer can be used to seal the components of the device. Preferably, the water vapor transmission rate may be from about 1.0 to 4.0 g/m 2 . 24 hours, more preferably about 1.9 to 3.5 g/m 2 . 24 hours.
阻擋層可以包括光固化組合物的固化產物。 The barrier layer can include a cured product of the photocurable composition.
在一種實施方式中,可以藉由使得光固化組合物光固化來形成阻擋層。可以塗布光固化組合物至約0.1 μm至20 μm的厚度,較佳為約1 μm至10 μm,然後藉由約10至500 mW/cm2的照射光固化約1秒至約50秒。 In one embodiment, the barrier layer can be formed by photocuring the photocurable composition. The photocurable composition may be applied to a thickness of about 0.1 μm to 20 μm, preferably about 1 μm to 10 μm, and then cured by irradiation light of about 10 to 500 mW/cm 2 for about 1 second to about 50 seconds.
阻擋層可以具有上述水蒸汽傳遞(透過)速率和釋氣生成量,從而連同無機阻擋層一起形成阻擋疊層,其可以用於裝置的構件的封裝。 The barrier layer can have the above-described water vapor transmission (transmission) rate and outgassing amount to form a barrier laminate along with the inorganic barrier layer, which can be used for encapsulation of components of the device.
本發明的又一方面涉及阻擋疊層,其包括有機阻擋層和無機阻擋層。 Yet another aspect of the invention relates to a barrier laminate comprising an organic barrier layer and an inorganic barrier layer.
無機阻擋層可以不同於有機阻擋層,並且可以增強有機阻擋層的作用。 The inorganic barrier layer may be different from the organic barrier layer and may enhance the action of the organic barrier layer.
只要阻擋層呈現良好的透光率和良好的水分和/或氧阻擋性能,並不特別限制無機阻擋層。 The inorganic barrier layer is not particularly limited as long as the barrier layer exhibits good light transmittance and good moisture and/or oxygen barrier properties.
例如,無機阻擋層可以由以下各項組成:金屬、金屬間化合物或合金、金屬或混合金屬的氧化物、金屬或混合金屬的氟化物、金屬或混合金屬的氮化物、金屬碳化物、金屬或混合金屬的氧氮化物(氮氧化物)、金屬或混合金屬的硼化物、金屬或混合金屬的氧硼化物(硼氧化物)、金屬或混合金屬的矽化物、以及其等之混合物。 For example, the inorganic barrier layer may be composed of a metal, an intermetallic compound or alloy, an oxide of a metal or a mixed metal, a fluoride of a metal or a mixed metal, a nitride of a metal or a mixed metal, a metal carbide, a metal or Mixed metal oxynitride (nitrogen oxide), metal or mixed metal boride, metal or mixed metal oxyborate (boron oxide), metal or mixed metal telluride, and mixtures thereof.
金屬可以包括但不限於矽(Si)、鋁(Al)、硒(Se)、鋅(Zn)、銻(Sb)、銦(In)、鍺(Ge)、錫(Sn)、鉍(Bi)、過渡金屬、鑭系金屬等。 The metal may include, but is not limited to, bismuth (Si), aluminum (Al), selenium (Se), zinc (Zn), antimony (Sb), indium (In), germanium (Ge), tin (Sn), antimony (Bi). , transition metals, lanthanide metals, etc.
具體地說,無機阻擋層可以包括氧化矽、氮化矽、矽氧氮化物(矽氮氧化物)、ZnSe、ZnO、Sb2O3、Al2O3、In2O3、或SnO2。 Specifically, the inorganic barrier layer may include hafnium oxide, tantalum nitride, hafnium oxynitride (niobium oxynitride), ZnSe, ZnO, Sb 2 O 3 , Al 2 O 3 , In 2 O 3 , or SnO 2 .
有機阻擋層具有上述的性能。因此,當交替沉積有機阻擋層和無機阻擋層時,可以確保有機阻擋層的平滑性能。另外,有機阻擋層能夠防止無機阻擋層擴散到其它無機阻擋層的缺陷。 The organic barrier layer has the above properties. Therefore, when the organic barrier layer and the inorganic barrier layer are alternately deposited, the smooth performance of the organic barrier layer can be ensured. In addition, the organic barrier layer can prevent defects in the inorganic barrier layer from diffusing to other inorganic barrier layers.
有機阻擋層可以包括光固化組合物的固化產物。 The organic barrier layer may include a cured product of the photocurable composition.
阻擋疊層可以包括有機阻擋層和無機阻擋層。此處,並不限制阻擋疊層的數目。可以修改阻擋疊層的組合,其取決於對氧和/或水分和/或蒸汽和/或化學物質滲透的耐性程度。 The barrier stack can include an organic barrier layer and an inorganic barrier layer. Here, the number of barrier laminates is not limited. The combination of barrier laminates can be modified depending on the degree of resistance to oxygen and/or moisture and/or vapor and/or chemical permeation.
在阻擋疊層中,可以交替沉積有機阻擋層和無機阻擋層。這是因為這樣的沉積可以提供對有機阻擋層的有利影響(起因於組合物的物理性質)。為此,有機阻擋層和無機阻擋層可以補充或加強對裝置的封裝效果。 In the barrier stack, the organic barrier layer and the inorganic barrier layer may be alternately deposited. This is because such deposition can provide a beneficial effect on the organic barrier layer (due to the physical properties of the composition). To this end, the organic barrier layer and the inorganic barrier layer can complement or enhance the encapsulation effect on the device.
可以交替沉積有機阻擋層和無機阻擋層。在一些實施方式中,總共交替沉積10層以下(例如,約2至10),較佳為7層以下(例如,約2至7層)的有機阻擋層和無機阻擋層。 The organic barrier layer and the inorganic barrier layer may be alternately deposited. In some embodiments, a total of 10 or less (eg, about 2 to 10), preferably 7 or less (eg, about 2 to 7 layers) organic barrier layers and inorganic barrier layers are alternately deposited.
在阻擋疊層中,有機阻擋層可以具有約0.1 μm至20 μm的厚度,較佳為約1 μm至10 μm。無機阻擋層可以具有約5 nm至500 nm的厚度,較佳為約5 nm至50 nm。 In the barrier stack, the organic barrier layer may have a thickness of about 0.1 μm to 20 μm, preferably about 1 μm to 10 μm. The inorganic barrier layer can have about 5 The thickness of nm to 500 nm is preferably about 5 nm to 50 nm.
阻擋疊層可以是裝置的構件的薄層封裝體(encapsulator)並且可以具有約5 μm以下的厚度,較佳為約1.5 μm至5 μm。 The barrier stack can be a thin-film encapsulator of the components of the device and can have a thickness of about 5 μm or less, preferably about 1.5 μm to 5 μm.
可以藉由真空法沉積無機阻擋層,例如,藉由濺鍍、化學氣相沉積、等離子體化學氣相沉積、蒸發、昇華、電旋風共振等離子氣相沉積(electrocyclone resonance-plasma vapor deposition)、或其等之組合。 The inorganic barrier layer may be deposited by a vacuum method, for example, by sputtering, chemical vapor deposition, plasma chemical vapor deposition, evaporation, sublimation, electrocyclone resonance-plasma vapor deposition, or The combination of them.
可以藉由類似於無機阻擋層的方法沉積有機阻擋層,或可以藉由塗布和固化光固化組合物形成有機阻擋層。 The organic barrier layer may be deposited by a method similar to the inorganic barrier layer, or the organic barrier layer may be formed by coating and curing the photocurable composition.
本發明的又一方面涉及封裝裝置,其包括裝置的構件,和阻擋疊層,該阻擋疊層係形成在裝置的構件上並且包括無機阻擋層和有機阻擋層。 Yet another aspect of the invention relates to a packaging device comprising a member of the device, and a barrier laminate formed on the member of the device and comprising an inorganic barrier layer and an organic barrier layer.
在一種實施方式中,有機阻擋層可以具有約4.0 g/m2.24小時以下的水蒸汽傳遞(透過)速率,如在5 μm的層厚度下在37.8℃和100%相對濕度下24小時所測得的。 In one embodiment, the organic barrier layer can have a thickness of about 4.0 g/m 2 . The water vapor transmission (permeation) rate below 24 hours, as measured at a layer thickness of 5 μm at 37.8 ° C and 100% relative humidity for 24 hours.
在另一種實施方式中,有機阻擋層可以具有約2000 ppm以下的釋氣生成量。 In another embodiment, the organic barrier layer can have a outgassing amount of less than about 2000 ppm.
有機阻擋層可以包括光固化組合物的固化產物。 The organic barrier layer may include a cured product of the photocurable composition.
有機阻擋層可以指封裝層,該封裝層用於保護裝置的構件,該構件包括有機發光二極體、有機太陽能電池等。有機阻擋層可以防止裝置的構件遭受由外部環境(如水分、氧等)引起的降解或氧化。另外,在高濕度條件或高溫和高濕度條件下,有機阻擋層很少產生釋氣,從而最大限 度地減少裝置的構件的釋氣,其進而防止裝置的構件的性能降低和壽命縮短。 The organic barrier layer may refer to an encapsulation layer for protecting a member of the device, including an organic light emitting diode, an organic solar cell, and the like. The organic barrier layer can prevent components of the device from being degraded or oxidized by external environments such as moisture, oxygen, and the like. In addition, in high humidity conditions or high temperature and high humidity conditions, the organic barrier layer rarely produces outgassing, thus the maximum limit The outgassing of the components of the device is reduced, which in turn prevents degradation of the performance of the components of the device and shortens the life.
有機阻擋層可以形成在無機阻擋層的上部或下部。 The organic barrier layer may be formed on the upper or lower portion of the inorganic barrier layer.
無機阻擋層可以指密封層,該密封層用於保護裝置的構件,該構件包括有機發光二極體、有機太陽能電池等。可以藉由使無機阻擋層接觸裝置的構件,或藉由密封其中放置有裝置的構件的內部空間而沒有接觸裝置的構件,來密封無機阻擋層。無機阻擋層可以阻止裝置接觸外部氧氣或水分,從而防止裝置的構件的劣化或損壞。 The inorganic barrier layer may refer to a sealing layer for protecting a member of the device, the member including an organic light emitting diode, an organic solar cell, or the like. The inorganic barrier layer can be sealed by contacting the member of the device with the inorganic barrier layer, or by sealing the internal space of the member in which the device is placed without contacting the member of the device. The inorganic barrier layer can prevent the device from contacting external oxygen or moisture, thereby preventing degradation or damage to the components of the device.
無機阻擋層可以形成在裝置的構件的上部,或形成在有機阻擋層的上部或下部。 The inorganic barrier layer may be formed on the upper portion of the member of the device or formed on the upper or lower portion of the organic barrier layer.
封裝裝置具有一種結構,其中用具有不同性質的無機阻擋層和有機阻擋層密封裝置。將無機阻擋層和有機阻擋層的至少一種偶合至基板,用於密封裝置的構件。 The packaging device has a structure in which an inorganic barrier layer and an organic barrier layer having different properties are used. At least one of an inorganic barrier layer and an organic barrier layer is coupled to the substrate for sealing the components of the device.
在裝置中可以包括多對(例如,兩對或更多對)的無機阻擋層和有機阻擋層。在一種實施方式中係交替(例如以無機阻擋層/有機阻擋層/無機阻擋層/有機阻擋層的順序)來沉積無機阻擋層和有機阻擋層。較佳地,沉積無機阻擋層/有機阻擋層對總共10次或以下(例如,約2至10次),更佳為7次或以下(例如,約2至7次)。 Multiple pairs (e.g., two or more pairs) of inorganic barrier layers and organic barrier layers can be included in the device. In one embodiment, the inorganic barrier layer and the organic barrier layer are deposited alternately (eg, in the order of an inorganic barrier layer/organic barrier layer/inorganic barrier layer/organic barrier layer). Preferably, the inorganic barrier layer/organic barrier layer is deposited a total of 10 times or less (for example, about 2 to 10 times), more preferably 7 times or less (for example, about 2 to 7 times).
上文已闡述了有機阻擋層和無機阻擋層的細節。 Details of the organic barrier layer and the inorganic barrier layer have been described above.
取決於裝置的構件的種類,可以包括基板。 A substrate may be included depending on the kind of components of the device.
並不特別限制於基板,只要它能夠使得裝置的構件疊置於其上。基板的實例可以包括透明玻璃、塑膠片、矽或 金屬基板等。 It is not particularly limited to the substrate as long as it can cause the components of the device to be stacked thereon. Examples of the substrate may include transparent glass, plastic sheets, enamel or Metal substrate, etc.
圖1示出根據本發明的一種實施方式的封裝裝置的截面圖。 1 shows a cross-sectional view of a package device in accordance with an embodiment of the present invention.
參照圖1,封裝裝置100可以包括基板10,在基板10上的裝置的構件20,和阻擋疊層30,其形成在裝置的構件20上並且包括無機阻擋層31和有機阻擋層32,其中無機阻擋層31接觸裝置20的構件20。 Referring to FIG. 1, a package apparatus 100 may include a substrate 10, a member 20 of the device on the substrate 10, and a barrier laminate 30 formed on the member 20 of the device and including an inorganic barrier layer 31 and an organic barrier layer 32, wherein inorganic The barrier layer 31 contacts the member 20 of the device 20.
圖2示出根據本發明的另一種實施方式的封裝裝置的截面圖。 2 shows a cross-sectional view of a package device in accordance with another embodiment of the present invention.
參照圖2,封裝裝置200包括基板10,形成在基板10上的裝置的構件20,和阻擋疊層32,其形成在裝置的構件20上並且包括無機阻擋層31和有機阻擋層32,其中無機阻擋層31可以密封其中容納裝置的構件的內部空間40。 Referring to FIG. 2, the packaging device 200 includes a substrate 10, a member 20 of the device formed on the substrate 10, and a barrier laminate 32 formed on the member 20 of the device and including an inorganic barrier layer 31 and an organic barrier layer 32, wherein inorganic The barrier layer 31 can seal the interior space 40 of the component in which the device is housed.
圖1和圖2示出這樣的結構:其中形成單無機阻擋層和單有機阻擋層。然而,可以沉積無機阻擋層和有機阻擋層多次。另外,密封劑和/或基板(在圖1和圖2中未示出)可以進一步形成在側面上和/或由無機阻擋層和有機阻擋層組成的複合阻擋層的上部。 1 and 2 illustrate a structure in which a single inorganic barrier layer and a single organic barrier layer are formed. However, the inorganic barrier layer and the organic barrier layer may be deposited multiple times. Additionally, a sealant and/or substrate (not shown in Figures 1 and 2) may be further formed on the sides and/or the upper portion of the composite barrier layer comprised of an inorganic barrier layer and an organic barrier layer.
可以藉由任何典型的方法產生裝置。將裝置沉積在基板上,然後在其上形成無機阻擋層。藉由旋塗、狹縫式塗布等,將光固化組合物塗布至約1 μm至5 μm的厚度,在其上照射光以形成有機阻擋層。可以重複形成無機阻擋層和有機阻擋層的程序(較佳為10次以下)。 The device can be produced by any typical method. A device is deposited on the substrate and an inorganic barrier layer is then formed thereon. The photocurable composition is applied to a thickness of about 1 μm to 5 μm by spin coating, slit coating, or the like, and light is irradiated thereon to form an organic barrier layer. The procedure of forming the inorganic barrier layer and the organic barrier layer (preferably 10 or less) may be repeated.
在一種實施方式中,封裝裝置的實例可以包括有機發 光顯示器,其包括但不限於有機發光二極體、液晶顯示器、太陽能電池等。 In an embodiment, examples of the packaging device may include organic hair Optical displays, including but not limited to organic light emitting diodes, liquid crystal displays, solar cells, and the like.
接著,將參照一些實施例更加詳細說明本發明。這些實施例僅用於說明而不應以任何方式看作是限制本發明。 Next, the present invention will be described in more detail with reference to some embodiments. These examples are for illustrative purposes only and are not to be considered as limiting the invention in any way.
在實施例和比較實施例中使用的組分的詳情如下: The details of the components used in the examples and comparative examples are as follows:
(A)光固化單體:(A1)丙烯酸己酯,(A2)己二醇二丙烯酸酯,(A3)季戊四醇四丙烯酸酯,(A4)三(丙二醇)二丙烯酸酯(Aldrich) (A) Photocurable monomer: (A1) hexyl acrylate, (A2) hexanediol diacrylate, (A3) pentaerythritol tetraacrylate, (A4) tris(propylene glycol) diacrylate (Aldrich)
(B)含矽單體:(B1)1,3-二(3-甲基丙烯醯氧基丙基)四甲基二矽氧烷,(B2)1,3-二(3-甲基丙烯醯氧基丙基)四(三甲基矽烷氧基)二矽氧烷(Gelest),(B3)X-22-164A(Shinetsu)(單體由式5表示),其中R1和R2是伸丙基(-CH2CH2CH2-),Z1和Z2是甲基丙烯酸酯基團,以及n的平均值是6:
(C)起始劑:Darocur TPO(BASF AG) (C) Starter: Darocur TPO (BASF AG)
實施例和比較實施例Examples and comparative examples
以如表2中所列的量(單位:重量份)將(A)光固化單體、(B)含矽單體和(C)起始劑放入125 ml棕色聚丙烯瓶,接著利用振搖器混合3小時以製備組合物。 (A) photocurable monomer, (B) ruthenium containing monomer and (C) starter were placed in a 125 ml brown polypropylene bottle in an amount (unit: parts by weight) as listed in Table 2, followed by vibration The shaker was mixed for 3 hours to prepare a composition.
實驗實施例Experimental example
評估在實施例和比較實施例中產生的組合物的物理性質。結果示於表2。 The physical properties of the compositions produced in the examples and comparative examples were evaluated. The results are shown in Table 2.
物理性質的評估 Evaluation of physical properties
1、水蒸汽傳遞(透過)速率:採用水蒸汽傳遞(透過)速率測試儀(PERMATRAN-W 3/33,由MOCON製造)。將光固化組合物噴塗於Al試樣架並經受UV固化,其中藉由在100 mW/cm2下UV照射10秒,以產生層厚為5 μm的固化樣品。在5 μm的層厚度下,在37.8℃和100%的RH下24小時,利用水蒸汽傳遞(透過)速率測試儀(PERMATRAN-W 3/33,由MOCON製造)測量水蒸汽傳遞(透過)速率。 1. Water vapor transmission (permeation) rate: A water vapor transmission (permeation) rate tester (PERMATRAN-W 3/33, manufactured by MOCON) was used. The photocurable composition was sprayed Al sample holder and subjected to a UV-curable, in which by 100 mW / cm 2 under UV irradiation for 10 seconds to produce a layer thickness of 5 μm in a cured sample. Water vapor transmission (permeation) rate was measured using a water vapor transmission (permeation) rate tester (PERMATRAN-W 3/33, manufactured by MOCON) at a layer thickness of 5 μm for 24 hours at 37.8 ° C and 100% RH. .
2、有機阻擋層的釋氣生成量:將光固化組合物噴塗於玻璃基板並藉由在100 mW/cm2下UV照射10秒經受UV固化以產生尺寸為20 cm x 20 cm x 3 μm(寬度x長度x厚度)的有機阻擋層樣品。使用GC/MS測試儀(Perkin Elmer Clarus 600)來測量釋氣生成。GC/MS採用DB-5MS管柱(長度:30 m,直徑:0.25 mm,固定相的厚度:0.25 μm)作為管柱,以及氦氣(流量:1.0 mL/min,平均流速=32 cm/s)作為流動相。另外,分流比是20:1以及設定溫度條件以使得溫度保持在40℃下3分鐘,以10℃/分鐘的速率加熱,然後在320℃下保持6分鐘。在20 cm x 20 cm的玻璃尺寸下收集釋氣,收集容器是Tedlar袋,收集溫度是90℃,收集時間是30分鐘,在300 mL/分鐘的流量下進行N2清洗,且吸附劑是Tenax GR(5%的苯基甲基聚矽氧烷)。利用在正己烷中的濃度為150 ppm、400 ppm和800 ppm的甲苯溶液作為標準溶液繪製校準曲線,其中獲得的R2值為0.9987。上述條件可以總結於表1。 2. Outgassing amount of the organic barrier layer: The photocurable composition was sprayed on a glass substrate and subjected to UV curing by UV irradiation at 100 mW/cm 2 for 10 seconds to produce a size of 20 cm x 20 cm x 3 μm ( Organic barrier sample of width x length x thickness). Outgassing generation was measured using a GC/MS tester (Perkin Elmer Clarus 600). GC/MS uses DB-5MS column (length: 30 m, diameter: 0.25 mm, thickness of stationary phase: 0.25 μm) as the column, and helium (flow: 1.0 mL/min, average flow rate = 32 cm/s) ) as a mobile phase. Further, the split ratio was 20:1 and the temperature conditions were set such that the temperature was maintained at 40 ° C for 3 minutes, heated at a rate of 10 ° C / minute, and then held at 320 ° C for 6 minutes. The outgas was collected at a glass size of 20 cm x 20 cm. The collection container was a Tedlar bag. The collection temperature was 90 ° C, the collection time was 30 minutes, N 2 cleaning was performed at a flow rate of 300 mL/min, and the adsorbent was Tenax. GR (5% phenylmethyl polyoxane). A calibration curve was prepared using a toluene solution having a concentration of 150 ppm, 400 ppm, and 800 ppm in n-hexane as a standard solution, wherein the R2 value obtained was 0.9987. The above conditions can be summarized in Table 1.
表1
3、光固化率:利用FT-IR(NICOLET 4700,Thermo)並在1635 cm-1(C=C)和1720 cm-1(C=O)附近,測量光固化組合物的吸收峰的強度。首先,將光固化組合物噴塗在玻璃基板上並藉由在100 mW/cm2下UV照射10秒經受UV固化以產生尺寸為20 cm x 20 cm x 3μm(寬度x長度x厚度)的樣品。將固化膜切割成試樣,其進而用來在1635 cm-1(C=C)和1720 cm-1(C=O)附近測量吸收峰的強度,其中利用FT-IR(NICOLET 4700,由Thermo製造)。藉由方程1計算光固化率:光固化率(%)=| 1-(A/B)| x 100 3. Photocuring rate: The intensity of the absorption peak of the photocurable composition was measured by FT-IR (NICOLET 4700, Thermo) and in the vicinity of 1635 cm -1 (C=C) and 1720 cm -1 (C=O). First, a photocurable composition was sprayed on a glass substrate and subjected to UV curing by UV irradiation at 100 mW/cm 2 for 10 seconds to produce a sample having a size of 20 cm x 20 cm x 3 μm (width x length x thickness). The cured film was cut into a sample which was in turn used to measure the intensity of the absorption peak near 1635 cm -1 (C=C) and 1720 cm -1 (C=O) using FT-IR (NICOLET 4700, by Thermo Manufacturing). Calculate the photocuring rate by Equation 1: Photocuring rate (%) = | 1-(A/B)| x 100
其中,A是在固化膜上在1635 cm-1附近的吸收峰的強度 與在1720 cm-1附近的吸收峰的強度的比率,以及B是在光固化組合物上在1635cm-1附近的吸收峰的強度與在1720 cm-1附近的吸收峰的強度的比率。 Wherein, A is the cured film strength at 1635 cm -1 and an absorption peak in the vicinity of the intensity ratio of absorption peaks near 1720 cm -1, and B is the absorption near 1635cm -1 in the photocurable composition The ratio of the intensity of the peak to the intensity of the absorption peak around 1720 cm -1 .
如表2所示,和比較實施例相比,自本發明的光固化組合物製備的層顯示低水蒸汽傳遞(透過)速率和顯著減少的釋氣。另外,和比較實施例相比,本發明的光固化組合物顯示顯著高的光固化率。 As shown in Table 2, the layers prepared from the photocurable composition of the present invention exhibited a low water vapor transmission (permeation) rate and a significantly reduced outgassing as compared to the comparative examples. In addition, the photocurable composition of the present invention exhibited a significantly high photocuring ratio as compared with the comparative examples.
本領域技術人員應當明瞭,本發明並不受限於上述實施方式和附圖,並且可以進行各種變型、改變、和替換而不背離本發明的精神和範圍。因此,這些實施方式僅用於 說明的目的而不應以任何方式看作是限制本發明的。 It is apparent to those skilled in the art that the present invention is not limited to the above-described embodiments and the drawings, and various modifications, changes, and substitutions may be made without departing from the spirit and scope of the invention. Therefore, these implementations are only for The purpose of the description is not to be construed as limiting the invention in any way.
10‧‧‧基板 10‧‧‧Substrate
20‧‧‧構件 20‧‧‧ components
30‧‧‧阻擋疊層 30‧‧‧Block stack
31‧‧‧無機阻擋層 31‧‧‧Inorganic barrier
32‧‧‧有機阻擋層 32‧‧‧Organic barrier
100‧‧‧封裝裝置 100‧‧‧Package
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