TWI609989B - Gas distributing injector applied in mocvd reactor - Google Patents

Abstract

The present invention relates to a gas split nozzle for use in a chemical vapor deposition apparatus, the gas split nozzle comprising at least one gas layer of a single layer structure for splitting various gases. The gas distribution layer comprises a disk-shaped body, a plurality of first gas channels, a plurality of second gas channels, and a plurality of third gas channels, wherein the first gas channel, the second gas channel, and the third gas channel Radially arranged in the same horizontal plane in the disc-shaped body for different gases to pass, and different gases are injected laterally into the chemical vapor deposition apparatus in the same plane via different gas passages. Thereby, the gas splitting nozzle of the present invention can perform gas splitting in a single layer structure.

Description

Gas split nozzle for chemical vapor deposition equipment

The present invention relates to a gas split nozzle for use in a chemical vapor deposition apparatus, and more particularly to a gas split nozzle having a gas split and a side gas injection function for each single layer therein.

In the process of electronic components and photovoltaic elements, it is often necessary to fabricate thin films on substrates or wafers by metalorganic chemical vapor deposition (MOCVD) techniques, usually by using an injector to inject a group III gas with a group V gas. A group III-V compound semiconductor thin film (for example, GaN, AlN, etc.) is formed by being introduced into a planetary organic metal chemical vapor deposition reactor (planetary MOCVD reactor). In the fabrication of such a Group III-V compound semiconductor thin film, a gas nozzle used in a planetary organic metal chemical vapor deposition reactor (planetary MOCVD reactor) is usually designed with a triple injector. Referring to the first figure, it is a side view of a conventional dispensing head 10 designed with a triple injector. The nozzle 10 is mainly composed of three different levels of gas pipes, such as the upper tube 12, the middle tube 14, and the lower tube 16, which are arranged from top to bottom. Hydrogen (H ₂ ) or nitrogen (N ₂ ) is a carrier gas of three channels. (carrier gas). Wherein, the group V gas (for example, ammonia gas (NH ₃ )) is emitted from the upper tube 12 and the lower tube 16, and the group III gas (for example, trimethylgallium (TMGa), trimethylaluminum (TMAl)) is taken from the middle tube 14 The III group gas and the group V gas meet at a region where the substrate (or wafer) 18 is placed and chemically react, and a group III-V compound semiconductor film is deposited on the surface of the substrate (or wafer) 18. .

Since the conventional nozzle 10 is required to split different gases, it is necessary to adopt a multi-layer structure design in which the upper tube 12, the middle tube 14, and the lower tube 16 are vertically stacked, so that different gases can be longitudinally shunted. The horizontal planes of different heights are injected into the organic metal chemical vapor deposition reactor (MOCVD reactor), so they cannot be further reduced in volume, and since different reaction gases are ejected from different heights (or horizontal planes), various reaction gases are required in addition to In addition to the lateral diffusion for a certain period of time, it is also necessary to perform longitudinal diffusion for a certain period of time, so that each reaction gas is uniformly distributed in the reaction chamber to generate a reaction, and a uniform III-V compound semiconductor thin film is deposited.

In view of this, there is a need for a nozzle that can perform gas splitting in a single-layer structure to allow various reaction gases to be ejected and diffused and mixed from the same horizontal plane, thereby reducing the volume of the nozzle and the time during which the reaction gas diffuses.

One of the objects of the present invention is to solve the disadvantages of the conventional showerhead of a metal-metal chemical vapor deposition (MOCVD) reactor, and to provide a gas split nozzle for a chemical vapor deposition apparatus, which can be passed through a single-layer structure. The different reaction gases are split and sprayed laterally from the same horizontal plane to shorten the time required for the various reaction gases to uniformly diffuse in the reaction chamber, and further reduce the volume of the nozzle, especially the length or volume in the longitudinal direction.

According to one aspect of the present invention, there is provided a gas split nozzle for use in a chemical vapor deposition apparatus, the gas split nozzle comprising a single layer of gas split layer for diverting different gases. It is laterally ejected from the same horizontal plane. The gas split layer comprises a disc-shaped body, a plurality of first gas passages, a plurality of second gas passages, and a plurality of third gas passages. The central position of the disc-shaped body has a circular opening as a central air supply passage for accommodating a gas distribution device and for gas passage, through which different (reaction) gases are respectively distributed to the first A gas passage, a second gas passage, and a third gas passage are used to perform gas splitting. Either the first (reaction) gas, the second (reaction) gas, and the third (reaction) gas may take appropriate carrier gases, such as hydrogen (H ₂ ), nitrogen (N ₂ ), etc., and carry different ( The reaction gas passes through the first gas passage, the second gas passage, and the third gas passage into the reaction chamber. The first gas passage is radially arranged from a central position of the disc-shaped body toward a periphery (or a circumferential direction) of the disc-shaped body for arranging the first gas (ie, the group III gas) from the center of the disc-shaped body The position is conveyed to the periphery of the disc-shaped body and is ejected laterally. The second gas passage is radially arranged from a central position of the disc-shaped body toward a periphery (or a circumferential direction) of the disc-shaped body for arranging the second gas (ie, the group V gas) from the center of the disc-shaped body The position is conveyed to the periphery of the disc-shaped body and is ejected laterally. The third gas passage is radially arranged from a central position of the disc-shaped body toward a periphery (or a circumferential direction) of the disc-shaped body for using a third gas (ie, a group V gas) from the center of the disc-shaped body The position is conveyed to the periphery of the disc-shaped body and is ejected laterally. The first gas passages, the second gas passages, and the third gas passages are symmetrically distributed on the same horizontal plane within the disc-shaped body. By the first gas passage, the second gas passages, and the third gas passages, a single layer structure can be used to replace the different (reacted) gas by substituting a conventional multilayer structure (ie, a triple nozzle design). That is, different (reaction) gases can be transported on the same horizontal plane through different gas passages and sprayed laterally by the spray head (or gas split layer) to shorten the time required for the uniform diffusion of various reaction gases in the reaction chamber and the volume of the nozzle (especially Reduce the length or volume of the portrait).

Accordingly, the present invention provides a gas splitting nozzle for use in a chemical vapor deposition apparatus which can perform a (reaction) gas splitting and laterally ejecting it from the same horizontal plane without a multi-layer structure (ie, The triple nozzle design) performs a gas flow, thereby shortening the time required for the uniform diffusion of various reaction gases in the reaction chamber and reducing the volume of the nozzle (especially reducing the length or volume in the longitudinal direction).

Some embodiments of the invention are described in detail below. However, the present invention may be widely practiced in other embodiments in addition to the detailed description. That is, the scope of the present invention is not limited by the embodiments of the present invention, and the scope of the patent application proposed by the present invention shall prevail. Secondly, when the various constituent elements (for example, the gas split layer, the gas passage) in the gas splitting nozzle of the chemical vapor deposition apparatus shown in the embodiment of the present invention are described by a single element, they should not be used as There is a limited recognition that the spirit and scope of the present invention can be applied to a structure in which a plurality of constituent elements coexist when the following description does not particularly emphasize the limitation of the number. Furthermore, in the present specification, different parts of various constituent element elements (for example, gas split layers, gas passages) used in the gas splitting nozzle of the chemical vapor deposition apparatus shown in the embodiment are not completely drawn according to the size. Certain scales may be exaggerated or simplified as compared to other related scales to provide a clearer description to enhance the understanding of the invention. The prior art of the present invention, which is used in the prior art, is only referred to herein by reference.

Referring to the second drawing, which is a top view and a side view of a gas splitting nozzle 100 applied to a chemical vapor deposition apparatus according to an embodiment of the present invention, the left drawing (ie, the drawing near the left hand side of the reader) is a top view, and the right drawing is shown. (ie, close to the right hand side of the reader) is a side view. The gas split nozzle 100 includes a gas split layer 102 and is comprised of the gas split layer 102. The gas distribution layer 102 is a single layer structure that can split different (reaction) gases and laterally eject all of the split (reaction) gases from the same horizontal plane. The gas distribution layer 102 includes a disk-shaped body 104 (or the gas distribution layer 102 itself is a disk-shaped body 104), and a plurality of first gas passages 108 for dividing and delivering the first (reaction) gas. A second gas passage 110 for diverting and transporting the second (reaction) gas, and a plurality of third gas passages 112 for diverting and transporting the third (reaction) gas. The central position of the disc-shaped body 104 (or the gas distribution layer 102) has a circular opening 106 as a central air supply passage for accommodating a gas distribution device (not shown) and for various (reaction) A gas (for example, a first (reaction) gas, a second (reaction) gas, a third (reaction) gas, etc.) is passed through, wherein a different (reactive) gas can be gas or transported to a specific one by means of a gas distribution device In the gas passage, for example, the first gas passage, the second gas passage, and the third gas passage. Since the air distribution device is not the focus of the present invention, it is not specifically described and limited herein, and any gas distribution device that can achieve gas splitting can be applied to the gas split nozzle of the present invention.

These first gas passages 108 are centered on the center position of the disk-shaped body 104, and are radially displaced from the center position of the disk-shaped body 104 toward the periphery of the disk-shaped body 104 (i.e., the circumferential direction of the disk-shaped body 104). The disk extends through the disk-shaped body 104 (or the gas distribution layer 102) in a radial direction and is arranged radially around the center of the disk-shaped body 104. Each of the first gas passages 108 has a gas inlet at a central position of the disc-shaped body 104, and has a gas outlet at the periphery of the disc-shaped body 104 (i.e., the circumference or side of the disc-shaped body 104). The first gas passage 108 is configured to allow the first (reaction) gas to pass therethrough, enter from the gas inlet, and be ejected from the gas outlet, whereby the first (reactive) gas is directed from the center of the disc-shaped body 104 The periphery of the disc-shaped body 104 is transported and ejected laterally (or laterally) by the periphery of the disc-shaped body 104, and the first (reaction) gas is supplied to the organometallic chemical vapor phase reactor in a radial spray manner. . The second gas passage 110 is also centered on the center position of the disk-shaped body 104, and is radially displaced from the center position of the disk-shaped body 104 toward the periphery of the disk-shaped body 104 (i.e., the circumferential direction of the disk-shaped body 104). The disk extends through the disk-shaped body 104 (or the gas distribution layer 102) in a radial direction and is arranged radially around the center of the disk-shaped body 104. Each of the second gas passages 110 has a gas inlet at a central position of the disc-shaped body 104, and has a gas outlet at the periphery of the disc-shaped body 104 (i.e., the circumference or side of the disc-shaped body 104). The second gas passage 110 is configured to allow the second (reaction) gas to pass therethrough, enter from the gas inlet, and be ejected from the gas outlet, whereby the second (reaction) gas is directed from the center of the disc-shaped body 104 The periphery of the disc-shaped body 104 is conveyed and ejected laterally (or laterally) from the periphery of the disc-shaped body 104, and the second (reaction) gas is supplied to the organometallic chemical vapor phase reactor in a radial spray manner. . The third gas passage 112 is also centered on the center position of the disk-shaped body 104, and is radially displaced from the center position of the disk-shaped body 104 toward the periphery of the disk-shaped body 104 (i.e., the circumferential direction of the disk-shaped body 104). The disk extends through the disk-shaped body 104 (or the gas distribution layer 102) in a radial direction and is arranged radially around the center of the disk-shaped body 104. Each of the third gas passages 112 has a gas inlet at a center position of the disc-shaped body 104, and has a gas outlet at the periphery of the disc-shaped body 104 (i.e., the circumference or side of the disc-shaped body 104). The third gas passage 112 is configured to allow a third (reaction) gas to pass therethrough, enter from the gas inlet, and be ejected from the gas outlet, whereby the third (reaction) gas is directed from the center of the disc-shaped body 104 The periphery of the disc-shaped body 104 is conveyed and ejected laterally (or laterally) by the periphery of the disc-shaped body 104, and the third (reaction) gas is supplied to the organometallic chemical vapor phase reactor in a radial spray manner. .

The first gas passage 108, the second gas passage 110, and the third gas passage 112 are not only radially arranged in the disc-shaped body 104 (or the gas split layer 102), but are arranged in a circular arrangement in a circular manner. The disk-shaped body 104 is on the same horizontal plane, so that the gas passages are arranged in a radial symmetrical distribution on the same horizontal plane, so that the disk-shaped body 104 (or the gas-split layer 102) is maintained in a single-layer structure. Wherein, the first (reaction) gas is a group III gas, such as, for example, trimethylgallium (TMGa), trimethylaluminum (TMAl), etc., and the second (reaction) gas and the third (reaction) gas are both V groups. Gas (eg ammonia (NH ₃ )). When the III-V compound semiconductor film is fabricated, the second (reaction) gas and the third (reaction) gas may be different V group gases, that is, the second gas channel and the third gas channel, according to the requirements and conditions of the process. It is possible to pass or transport different Group V gases into the reaction chamber, or the second (reaction) gas and the third (reaction) gas may be the same Group V gas, that is, the second gas passage and the third gas passage may pass. Or deliver the same Group V gas into the reaction chamber. In addition, the second (reaction) gas and the third (reaction) gas may be different flow rate of the group V gas, that is, the second gas channel and the third gas channel may pass or transport different amounts of the group V gas into the reaction chamber, or Yes, the second (reaction) gas and the third (reaction) gas may be the same flow rate of the group V gas, that is, the second gas passage and the third gas passage may pass or deliver the same amount of the group V gas into the reaction chamber. Either the first (reaction) gas, the second (reaction) gas, and the third (reaction) gas may take appropriate carrier gases, such as hydrogen (H ₂ ), nitrogen (N ₂ ), etc., and carry various The (reaction) gas passes through the first gas passage, the second gas passage, and the third gas passage into the reaction chamber.

Referring to the second figure, in the gas splitting nozzle 100, each of the second gas passages 110 is sandwiched between two adjacent first gas passages 108, and each of the third gas passages 112 is also sandwiched between two adjacent ones. A second gas passage 110 or a third gas passage 112 is sandwiched between the first gas passages 108, that is, every two adjacent first gas passages. Furthermore, the gas passages in the gas splitting nozzle 100 (or the gas splitting layer 102) are arranged in the order of the first gas passage 108, the second gas passage 110, the first gas passage 108, and the third gas passage 112. One cycle is circulated in the gas distribution layer 102, or the first gas channel 108, the third gas channel 112, the first gas channel 108, and the second gas channel 110 may be arranged in a cycle in a cycle. Although the gas splitting nozzle 100 shown in the second figure only draws 12 first gas passages 108, 6 second gas passages 110, and 6 third gas passages 112, it is not limited thereto, but It can be increased or decreased according to the demand, and the increase or decrease of these gas passages is a simple change of the present invention, and therefore belongs to the scope of patent protection of the present invention. Furthermore, in the gas splitting nozzle 100, two adjacent first gas passages may have a second gas passage 110 or a third gas passage 112, but not limited thereto, but may be required according to requirements. Increasing the number of the second gas passages 110 or the third gas passages 112 sandwiched between the two adjacent first gas passages 108 as long as the two adjacent first gas passages are sandwiched by at least one second gas passage or at least a third The principle of the gas passage, that is, the design principle exhibited by the embodiment shown in the second drawing, is a simple change of the embodiment shown in the second drawing of the present invention, and should fall within the scope of the patent of the present invention.

When various (reactive) gases, such as a first (reaction) gas, a second (reaction) gas, and a third (reaction) gas, are introduced into the gas splitting nozzle 100, the gas distribution device (not shown) will be of different kinds. The (reaction) gases are separately vented or transported to different types of gas passages in the gas splitting nozzle 100 (or gas splitting layer 102), and the respective different types of gas passages are respectively adjusted according to the required flow rate and flow rate. (reaction) the flow rate and flow rate of the gas, and even adjust the flow rate and flow rate of the (reaction) gas passing through the different gas passages, for example, adjusting the (reaction) gas in the same type of gas passage to pass the same flow rate and flow rate, or The (reaction) gas in the same type of gas passage is adjusted to pass at different flow rates and flow rates. For example, the gas distribution device will gas (or transport) the first (reaction) gas to each of the first gas passages 108, and adjust the flow rate and flow rate according to the process requirements, and distribute the second (reaction) gas (or Conveying) to each of the second gas passages 110, and adjusting the flow rate and flow rate according to the process requirements, and distributing (or conveying) the third (reaction) gas to each of the third gas passages 112, and adjusting the flow rate according to the process requirements. Flow rate. Since all of the gas passages (including the first gas passage 108, the second gas passage 110, and the third gas passage 112) are not in communication with each other in the gas distribution layer 102 (or the disc-shaped body) 104, various ( The reaction gas is not mixed with each other in the gas split layer 102 (or the disk-shaped body 104), that is, it is not mixed with each other when it is not ejected by the gas splitting head 100. Since the first gas passage 108, the second gas passage 110, and the third gas passage 112 are all disposed on the same plane of the gas distribution layer 102 (or the disc-shaped body 104) of the single-layer structure, the first (reaction) The gas, the second (reaction) gas, and the third (reaction) gas are all centered on the gas splitting nozzle 100 (gas splitting layer 102) and radially from the gas shunting head 100 (gas shunt layer 102) on the same plane. After the periphery (or side) is ejected and enters the reaction chamber and is laterally diffused in the reaction chamber, each (reaction) gas will react to form a compound semiconductor thin film deposition. Thereby, the gas splitting nozzle 100 can replace the multi-layer structure of the conventional nozzle (ie, the triple nozzle design) with a single layer structure, that is, the gas shunting function can be achieved, so that the gas shunting can still be effectively performed without using a multi-layer structure, and The various (reaction) gases that are split are ejected from the side (or periphery) of the same layer (ie, the gas split layer 102 or the disc-shaped body 104), that is, the various (reactive) gases that are split are laterally (or laterally) from the same plane. It is sprayed out, so that various (reaction) gases need only be diffused over the same plane for a period of time to react, and there is no need to perform longitudinal diffusion to meet, so the process time can be reduced.

However, the arrangement of the first gas passage, the second gas passage, and the third gas passage in the gas split nozzle of the present invention comprises, in addition to using at least one second gas passage or at least one of the two adjacent first gas passages. In addition to the three gas passages, such as the embodiment shown in FIG. 2, at least one second gas passage and at least one third gas passage may be simultaneously sandwiched between each adjacent first gas passage. design. The third A is a top view and a side view of an embodiment of a gas splitting nozzle of the present invention in which at least one second gas passage and at least one third gas passage are sandwiched between two adjacent first gas passages. Referring to FIG. 3A, the gas splitting nozzle 100A and the gas splitting nozzle 100 shown in FIG. 2 are composed of the same constituent elements (ie, the gas split layer 102, the disk-shaped body 104, the first gas passage 108, and the second gas passage 110). And the third gas channel 112, etc., these constituent elements have been previously described in detail, and will not be described herein. In the gas distribution layer 102 of the gas splitting nozzle 100A, the arrangement of the various gas passages is cyclically arranged in the order of the first gas passage 108, the second gas passage 110, and the third gas passage 112. In other words, in the gas distribution layer 102 of the gas splitting nozzle 100A, a second gas passage 110 and a third gas passage 112 are interposed between each two adjacent first gas passages 108, and are arranged in a unit as a unit. In the gas distribution layer 102 (or the disk-shaped body 104), and as shown in FIG. 3A, each of the first gas passages 108 is shared by two adjacent units, and between each adjacent two first gas passages 108 The second gas passages 110 and the third gas passages 112 are arranged alternately with each other, that is, the second gas passages 110 are in front and the third gas passages 112 are arranged in a subsequent sequence (cycle). In other words, the arrangement of the various gas passages in the gas splitting nozzle 100A shown in FIG. 3A is cyclically arranged in the gas distribution layer 102 in the order of the first gas passage 108, the second gas passage 110, and the third gas passage 112. Or in the disc-shaped body 104).

Of course, it is also possible to adopt an arrangement in which the second gas passage 110 in the third A diagram is exchanged with the third gas passage 112, as shown in FIG. Referring to FIG. 3B, in the gas distribution layer 102 of the gas splitting nozzle 100B, the second gas passage 110 and the third gas passage 112 between the adjacent first gas passages 108 are arranged in a mutually alternate manner, but The third gas passages 112 are in front and the second gas passages 110 are arranged in a rear (cycle) sequence. In other words, the arrangement of the various gas passages in the gas splitting nozzle 100B shown in FIG. B is arranged in the gas shunt layer 102 in the order of the first gas passage 108, the third gas passage 112, and the second gas passage 110. Or in the disc-shaped body 104). In the embodiment shown in FIG. 3A and FIG. 3B, there is only one second gas channel 110 and one third gas channel 112 between each adjacent first gas channel 108, but not limited thereto. Instead, it can be increased as needed. For example, referring to FIG. 4A, in the gas splitting nozzle 100C shown in FIG. 4A, two second gas passages 110 and two third gas passages 112 are sandwiched between each adjacent first gas passage 108. And the second gas channel 110 and the third gas channel 112 of the adjacent two first gas channels 108 are arranged in a manner of being alternately rotated, and the first gas channel 108, the second gas channel 110, and the third gas channel are arranged. 112. The second gas passage 110 and the third gas passage 112 are sequentially arranged in the gas distribution layer 102 (or the disc-shaped body 104). Referring to FIG. 4B, in the gas splitting nozzle 100D shown in FIG. 4B, two second gas channels 110 and two third gas channels 112 are sandwiched between adjacent first gas channels 108, and adjacent thereto. The second gas passage 110 and the third gas passage 112 of the two first gas passages 108 are arranged in a manner of being alternately rotated with each other, but with the first gas passage 108, the third gas passage 112, the second gas passage 110, and the third The gas passage 112, the second gas passage 110, and the sequence are sequentially arranged in the gas split layer 102 (or the disc-shaped body 104). Therefore, from the embodiments shown in the third A diagram, the third B diagram, the fourth A diagram, and the fourth B diagram, it can be clearly understood that each adjacent two firsts used in accordance with the above embodiment of the present invention is clearly known. The design principle of the at least one second gas passage and the at least one third gas passage is sandwiched between the gas passages, and the second gas passage and the third gas passage of the adjacent two first gas passages are arranged in a manner of alternate rotation. All should belong to the simple variations of the above embodiments, and should fall within the scope of the patent of the present invention.

Furthermore, in the foregoing embodiment, in addition to the arrangement of the second gas passage and the third gas passage in the adjacent two first gas passages in a mutually alternate manner, other manners may be adopted, which are exemplified as follows: In the fifth A diagram, in the gas distribution layer 102 (or the disk-shaped body 104) of the gas splitting nozzle 100E, two second gas passages 110 and one third are sandwiched between two adjacent first gas passages 108. The gas passages 112, the second gas passages 110 and the third gas passages 112 are arranged in such a manner that a third gas passage 112 is sandwiched between the adjacent two second gas passages 110. Referring to FIG. 5B, in the gas distribution layer 102 (or the disk-shaped body 104) of the gas splitting nozzle 100F, a second gas passage 110 and two first sections are sandwiched between two adjacent first gas passages 108. The three gas passages 112 are arranged in such a manner that the second gas passages 110 and the third gas passages 112 are sandwiched by a second gas passage 110 between the adjacent two third gas passages 112. From the embodiments shown in FIGS. 5A and 5B, it can be clearly seen that at least one second gas passage is sandwiched between each adjacent two first gas passages as long as it is used in accordance with the above embodiment of the present invention. a design principle of a third gas passage, and arranged in such a manner that a second gas passage is sandwiched between two adjacent second gas passages, or a second gas passage is sandwiched between two adjacent third gas passages, regardless of How many second gas passages and third gas passages are sandwiched between two adjacent first gas passages, how many third gas passages are sandwiched between adjacent second gas passages, or how many second gases are sandwiched between adjacent third gas passages The passages are all subject to the simple variations of the above embodiments and are within the scope of the invention.

In the gas splitting nozzle of the present invention, a plurality of gas passage spacers may be provided for separating the gas passages in the gas split layer as a mixing reaction time of the heat radiating block and controlling different (reactive) gases. Referring to a sixth diagram, there is shown a plan view and a side view of an embodiment of a gas split nozzle having a gas passage spacer. Referring to the sixth drawing, the gas splitting nozzle 200 is also composed of a gas split layer 102 of a single layer structure, and the gas split layer 102 also includes a disk-shaped body 104 (or the gas split layer 102 itself is a disk shape) The main body 104), the plurality of first gas passages 108, the plurality of second gas passages 110, and the plurality of third gas passages 112 are formed, but further include a plurality of gas passage spacers 114. As shown in the sixth diagram, in the gas splitting nozzle 200, each of the first gas passages 108 is sandwiched between adjacent two gas passage spacers 114, and each of the second gas passages 110 is also sandwiched between the phases. Adjacent to the two gas passage spacers 114, each third gas passage 110 is also sandwiched between adjacent two gas passage spacers 114, that is, in the gas splitting nozzle 200, any gas passage and adjacent ones The other gas passages are separated by a gas passage spacer 114. In other words, in the gas splitting nozzle 200, the various gas passages and the gas passage spacers are a gas passage spacer 114, a first gas passage 108, a gas passage spacer 114, a second gas passage 110, a gas passage spacer 114, and a The three gas passages 112 are sequentially arranged in the gas split layer 102 (or the disk-shaped body 104). Since the first gas passage 108, the second gas passage 110, the third gas passage 112, and the gas passage spacer 114 are all disposed on the same plane in the gas distribution layer 102 (or the disk-shaped body 104), even the gas A gas passage spacer 114 is disposed in the flow dividing layer 102 (or the disk-shaped body 104), and the gas distribution layer 102 (or the disk-shaped body 104) still maintains its single-layer structure. Furthermore, the arrangement of the first gas channel 108, the second gas channel 110, the third gas channel 112, and the gas channel spacer 114 in the gas distribution layer 102 (or the disk-shaped body 104) is also the same as the foregoing embodiment. They all become a symmetric distribution.

Thereby, various (reactive) gases enter the gas splitting nozzle 200, and the different (reactive) gases are gas or transported to the corresponding gas passages through the air distribution device (not shown) (ie, the first gas passage) 108. After the second gas passage 110 and the third gas passage 112), various (reactive) gases pass through the corresponding gas passages, and are laterally (or laterally) from the periphery or sides of the gas splitting nozzle 200 from the same horizontal plane. It is ejected to form a radial lateral (or lateral) ejection centering on the gas splitting nozzle 200. Compared with the body splitting nozzles shown in the second to fifth panels, since the respective gas passages are separated by the gas passage spacers 114, the (reaction) gases ejected by the gas splitting nozzles 200 do not immediately meet. Moreover, it takes a relatively long time for the diffusion to meet, so that the time of encountering various (reactive) gases can be controlled by the arrangement of the gas passage spacers 114, thereby controlling the time at which various (reaction) gases start to react. Although, in the gas splitting nozzle 200, six first gas passages 108, three second gas passages 110, three third gas passages 112, and twelve gas passage spacers 114 are provided, but this is not Limit, but can be increased or decreased according to requirements, these quantitative changes are simple changes of the above embodiment (ie, the embodiment shown in FIG. 6), and the first gas channel, the second gas channel, and the third gas channel The relative arrangement position is also a simple change of the above embodiment (i.e., the embodiment shown in Fig. 6), and all of them belong to the patent scope of the present invention.

However, the arrangement of the first gas passage, the second gas passage, the third gas passage, and the gas passage spacer in the gas split nozzle of the present invention is sandwiched between adjacent gas passages except for each gas passage. In addition to this design between the spacers (for example, the embodiment shown in FIG. 6), other arrangement combinations may be employed, which are exemplified as follows: Referring to the seventh figure, the gas distribution nozzle 200A and the gas shown in FIG. The split nozzle 200 is composed of the same constituent elements (ie, the gas split layer 102, the disk-shaped body 104, the first gas passage 108, the second gas passage 110, the third gas passage 112, and the gas passage spacer 114, etc.). These constituent elements have been described in detail above and will not be described herein. In the gas splitting nozzle 200A, two first gas passages 108 and one second gas passage 110 are sandwiched by two adjacent gas passage blocks 114 as a first gas passage combination A, and separated by two adjacent gas passages. The block 114 has two first gas passages 108 and one third gas passage 112 as a second gas passage combination B, and is disposed on the gas in such a manner that the first gas passage combination A and the second gas passage combination B are alternately arranged. In the split nozzle 200A (or gas split layer 102), each gas channel spacer 114 is shared by the adjacent first gas channel combination A and the second gas channel combination B. The seventh figure is a combination of at least one first gas channel and at least one second gas channel sandwiched between two adjacent gas channel spacers as a first gas channel, and two adjacent gas channel spacers. Arranging at least one third gas passage as a second gas passage combination, and arranging the first gas passage combination and the second gas passage combination alternately in the gas split layer, one of the implementation principles of the design principle For example, any changes in conformity with this design principle belong to the simple variations of the embodiment shown in the seventh figure, and should fall within the scope and patent scope of the present invention.

For example, although only one second gas channel 110 is sandwiched between two adjacent first gas channels 108 in the first gas combination A, it is not limited thereto, and the second gas channel may be added as needed. The number of 110s (e.g., 2, 3, or more), which is a simple change in the embodiment shown in the seventh figure, is within the scope of the patent of the present invention. Although only one third gas passage 112 is sandwiched between two adjacent first gas passages 108 in the second gas combination B, it is not limited thereto, and the number of the third gas passages 112 may be increased as needed ( For example, 2, 3, or more, this number change is a simple change of the embodiment shown in the seventh figure, and should fall within the scope of the patent of the present invention. Furthermore, although two first gas channels 108 and one second gas channel 110 are sandwiched between two adjacent gas channel spacers 114 in the first gas combination A, it is not limited thereto, but may be regarded as Reducing the number of first gas passages, that is, only one first gas passage and one second gas passage are sandwiched between two adjacent gas passage spacers, or the number of first gas passages is increased as required (3 , 4 or more) and the number of second gas passages (2, 3 or more), and these first gas passages and second gas passages may take various combinations of arrangements, such as the first gas The channels are alternately arranged with the second gas passages, the plurality of second gas passages are arranged between the two first gas passages, etc., because the changes in the combination of the number and the arrangement are in accordance with the two adjacent gases taken in the seventh figure. A design principle is adopted in which at least one first gas passage and at least one second gas passage are combined as a first gas passage between the passage blocks, so that they are simple changes of the embodiment shown in FIG. 7 and belong to Patent model of the invention Wai. Although two first gas passages 108 and one third gas passage 112 are sandwiched between two adjacent gas passage spacers 114 in the second gas combination B, they are not limited thereto, but may be reduced as needed. The number of first gas passages, that is, only one first gas passage and one third gas passage are sandwiched between two adjacent gas passage spacers, or the number of first gas passages is increased as required (3, 4 Or more than the number of the third gas passages (2, 3 or more), and the first gas passages and the third gas passages may take various combinations of arrangements, such as the first gas passage and the first The three gas channels are alternately arranged, the plurality of third gas channels are arranged between the two first gas channels, and the like, and the changes in the combination of the number and the arrangement are in accordance with the two adjacent gas channel spacers taken in the seventh figure. The design principle is combined between at least one first gas passage and at least one third gas passage as a second gas passage, so that they are simple changes of the embodiment shown in the seventh figure, and should belong to the present invention. Patent scope.

In addition, the first gas channel and the second gas channel in the first gas channel combination in the gas splitting nozzle 200A shown in FIG. 7 are interchanged, that is, the two adjacent gas channels are sandwiched between (at least) a first gas passage, and the first gas passage in the second gas passage combination is interchanged with the third gas passage, that is, the (at least) first gas passage is sandwiched between the two adjacent third gas passages, Also corresponding to the seventh figure, two adjacent gas passage blocks are sandwiched between at least one first gas passage and at least one second gas passage as a first gas passage combination, and two adjacent gas passage spacers. The design principle is combined with at least one third gas passage as the second gas passage, and is a simple variation of the embodiment shown in the seventh embodiment, and is within the scope of the patent of the present invention.

Referring to FIG. 8A, the gas splitting nozzle 200B and the gas splitting nozzle 200 shown in FIG. 6 are composed of the same constituent elements (ie, the gas split layer 102, the disk-shaped body 104, the first gas passage 108, and the second gas passage 110). The third gas passage 112, and the gas passage spacer 114, etc., are composed of these components, which are not described in detail herein. The gas splitting nozzle 200B shown in FIG. 8A adopts an arrangement in which at least one first gas passage, at least one second gas passage, and at least one third gas passage are sandwiched between two adjacent gas passage spacers. This design is circulated in the gas splitting nozzle 200B (or the gas splitting layer 102). In the gas splitting nozzle 200B, a first gas passage 108, a second gas passage 110, and a third gas passage 112 are sandwiched between two adjacent gas passage spacers 114, and are arranged as a unit, and are circulated in the gas. In the diversion layer 102 (or the disc-shaped body 104), and each gas passage spacer 114 is shared by two adjacent units. The arrangement between the first gas channel 108, the second gas channel 110, and the third gas channel 112 between the two adjacent gas channel spacers 114 is such that the first gas channel 108 is sandwiched between the second gas channel 110 and the The design between the third gas passages 112. As shown in FIG. 8A, the two adjacent gas passage spacers 114 are arranged in the order of the second gas passage 110, the first gas passage 108, and the third gas passage 112, but are not limited thereto. Arranged in reverse order according to requirements, that is, the third gas passage 112, the first gas passage 108, and the second gas passage 110 are arranged in this order, as shown in the eighth embodiment, the gas splitting nozzle 200C, which is also taken with the eighth A is the same design principle and therefore belongs to the scope of the present invention. In the gas splitting nozzle 200B shown in FIG. 8A and the gas splitting nozzle 200C shown in FIG. 8B, although only the first gas passage 108 and the second gas passage are sandwiched between the two adjacent gas passage spacers 114. 110, and the third gas passage 112, but not limited thereto, but the number of the first gas passages, the number of the second gas passages, and the number of the third gas passages, for example, two adjacent gases, may be increased as needed. Between the channel spacers, two or more first gas channels, two or more second gas channels, and two or more third gas channels are sandwiched, and the second gas channel, the first gas channel, The third gas passage is in the order of the third gas passage, the first gas passage, the second gas passage, or other sequential arrangement, and is cyclically arranged between the two adjacent gas passage spacers. A quantitative change is a simple change of the embodiment shown in Figs. 8A and 8B, and should fall within the scope of the patent of the present invention.

Of course, the number of different gas passages between the two adjacent gas passage spacers in the foregoing embodiments shown in the eighth and eighth embodiments can be two-phase as in the eighth and eighth panels. The various gas passages between adjacent gas passage spacers have the same number of designs, or different gas passages between two adjacent gas passage spacers have different numbers of designs, see Figure 9A, gas splitting The showerhead 200D also adopts an arrangement in which at least one first gas passage, at least one second gas passage, and at least one third gas passage are interposed between two adjacent gas passage spacers to be circulated in the gas splitting nozzle 200D (or This design is in the gas splitting layer 102), but the two adjacent gas passage blocks are of different designs with different numbers of gas passages. In the gas splitting nozzle 200D, a first gas channel 108, two second gas channels 110, and two third gas channels 112 are sandwiched between two adjacent gas channel spacers 114, wherein the first gas channel 108 is sandwiched between two adjacent third gas passages 112 and is simultaneously sandwiched between two adjacent second gas passages 110, but not limited thereto, but as ninth B As shown, the first gas passage 108 can be sandwiched between two adjacent second gas passages 110 as desired, and simultaneously sandwiched between two adjacent third gas passages 112. Alternatively, at least one first gas channel, at least one second gas channel, and at least one third gas channel are sandwiched between the two adjacent gas channel spacers, but the two adjacent gas channel spacers are taken between The different gas passages have different numbers of the design, and the arrangement of the various gas passages between the two adjacent gas passage spacers may also adopt at least one second gas passage between the two adjacent first gas passages. At least one third gas channel is arranged in a manner. However, the number of different gas passages between two adjacent gas passage spacers exhibited in the above embodiments may be increased according to requirements, and this amount change is a simple change of the above embodiment, but belongs to The patent scope of the present invention.

In addition, from the embodiments shown in the above second to ninth B, it is clear that the first gas passage 108, the second gas passage 110, and the third gas passage 112 are both centered by the disc-shaped main body 104. The gas passage that gradually becomes larger toward the peripheral position of the disc-shaped main body 104, and the gas passage spacer 114 is a spacer that gradually becomes larger from the center position of the disc-shaped main body 104 toward the peripheral position of the disc-shaped main body 104. The side views of the gas splitting nozzles shown in the above embodiments are all viewed from the upper side of the side view of the gas splitting nozzle toward the gas splitting nozzle. From the side view of the gas splitting nozzle shown in the above embodiment, it can be seen that the various gas passages of the gas splitting nozzle of the foregoing embodiment (ie, the first gas passage, the second gas passage, and the third gas passage) are vertically disposed at The gas distribution layer (or disk-shaped body), that is, perpendicular to the top surface and the bottom surface of the gas distribution layer (or the disk-shaped body), is disposed in the gas distribution layer (or the disk-shaped body), but like the tenth figure In the gas splitting nozzle 300 shown, various gas passages (ie, the first gas passage, the second gas passage, and the third gas passage) may be disposed in a skewed manner on the gas distribution layer (or the disc-shaped body), that is, The gas split layer 102A (or the disk-shaped body) is disposed perpendicular to the top and bottom surfaces of the gas split layer 102A (or the disk-shaped body).

The gas splitting nozzle of the present invention can also adopt a gas shunting nozzle having a single layer structure disclosed in the foregoing various embodiments to form a gas shunting head having a multi-layer structure, since each single layer can perform gas shunting multiple layers. The structured gas splitting nozzle can split more gases, making the organometallic phase deposition process more diversified and more flexible. In the design of such a multi-layer gas split nozzle, the gas split nozzle comprises at least one second gas split layer stacked on a (first) gas split layer (ie, the gas split layer 102 shown in the foregoing embodiment, 102A) Designed on this principle. Referring to Fig. 11A, there is shown a side view of a multi-layer structure gas splitting nozzle 400 comprising a single-layered gas split layer stack. The gas splitting nozzle 400 comprises two gas split layers having a single layer structure, namely a (first) gas split layer 1021 and a second gas split layer 1022, and a (first) gas split layer 1021 and a second gas split. The layer 1022 is formed by stacking, although in the eleventh A, the gas splitting nozzle 400 is composed of a (first) gas split layer 1021 stacked on the second gas split layer 1022, but is not limited thereto. It may also be composed of a second gas split layer 1022 stacked on the (first) gas split layer 1021. As with the single-layered body split layer 102, 102A shown in the previous embodiment, the (first) gas split layer 1021 and the second gas split layer 1022 each comprise a disk-shaped body, a plurality of first gas channels 108, and a plurality The second gas channel 110 and the plurality of third gas channels 112, the composition of the single layer structure is as detailed in the foregoing, and will not be further described herein. In addition, although in FIG. 11A, the arrangement of the first gas passage, the second gas passage, and the third gas passage in the second gas split layer 1022 and the first gas passage in the (first) gas split layer 1021 The arrangement of the second gas passage and the third gas passage is the same, that is, the (first) gas split layer 1021 and the second gas split layer 1022 are all arranged by the gas passages in the gas split layer 102 shown in the second figure, but Rather than being limited thereto, the gas channel arrangement of any of the foregoing embodiments may be employed as desired, and the gas channel arrangement through which it is simply varied may be employed. In addition, although the gas splitting nozzle 400 shown in FIG. 11A has only two gas layer split layers of a single layer structure, it is not limited thereto, and the number of gas split layers can be increased according to requirements. This change in quantity is a simple change of the embodiment shown in Fig. 11A, and therefore should fall within the scope and patent scope of the present invention.

Secondly, the multi-layer structure gas split nozzle of the present invention can also adopt a design in which a single-layer structure gas split layer having different gas passages is stacked. Referring to FIG. 11B, the gas split nozzle 400A is also formed by stacking a (first) gas split layer 1021 and a second gas split layer 1023, but differs from the gas split nozzle 400 shown in FIG. The arrangement of the first gas channel, the second gas channel, and the third gas channel in the second gas distribution layer 1023 and the first gas channel, the second gas channel, and the third gas channel in the (first) gas distribution layer 1021. The arrangement is different, that is, the (first) gas split layer 1021 is arranged by the gas passages in the gas split layer 102 shown in the second figure, and the second gas split layer 1023 is formed by the gas split shown in the sixth figure. The gas passages in layer 102 are arranged, but not limited thereto, and the gas passage arrangement of any of the foregoing embodiments may be combined with the gas passage arrangement for which it is simply varied, as desired. Although in FIG. 11B, the gas splitting nozzle 400 is composed of a (first) gas split layer 1021 stacked on the second gas split layer 1023, but not limited thereto, or may be a second The gas distribution layer 1023 is stacked on the (first) gas distribution layer 1021, and although the gas distribution nozzle 400 has only two layers of a single-layer gas distribution layer, it is not limited thereto, but may be required according to requirements. Increasing the number of gas split layers, which is a simple change of the embodiment shown in Fig. 11B, should fall within the scope and patent scope of the present invention.

In view of the above embodiments, the present invention provides a gas splitting nozzle applied to a chemical vapor deposition apparatus, which can perform a (reaction) gas splitting and laterally ejecting it from the same horizontal plane in a single layer structure without The multi-layer structure (i.e., the triple nozzle design) performs a gas flow so that the time required for the uniform diffusion of various reaction gases in the reaction chamber can be shortened and the volume of the nozzle can be reduced (especially by reducing the length or volume in the longitudinal direction).

10 Conventional nozzle 12 Upper tube 14 Middle tube 16 Lower tube 18 Substrate 100, 100A, 100B, 100C, 100D Gas splitting nozzle 102, 102A Gas split layer 104 Disc-shaped body 106 Circular opening 108 First gas channel 110 Two gas channels 112 third gas channels 114 gas channel spacers 200, 200A, 200B, 200C, 200D, 200E gas splitting nozzles 300 gas splitting nozzles 400, 400A gas splitting nozzles 1021 gas splitting layers 1022, 1023 second gas splitting layer A First gas channel combination B second gas channel combination

The first figure is a side view of a conventional spray head applied to an organometallic chemical vapor deposition reactor. The second figure is a plan view and a side view of a gas splitting nozzle applied to a chemical vapor deposition apparatus according to an embodiment of the present invention. 3A and 3B are top and side views of a gas splitting nozzle applied to a chemical vapor deposition apparatus according to another embodiment of the present invention. 4A and 4B are top and side views of a gas splitting nozzle applied to a chemical vapor deposition apparatus according to still another embodiment of the present invention. 5A and 5B are top and side views of a gas splitting nozzle applied to a chemical vapor deposition apparatus according to still another embodiment of the present invention. Figure 6 is a plan view and a side view of a gas split nozzle having a gas passage spacer applied to a chemical vapor deposition apparatus according to an embodiment of the present invention. Figure 7 is a plan view and a side view of a gas split nozzle having a gas passage spacer applied to a chemical vapor deposition apparatus according to another embodiment of the present invention. 8A and 8B are top and side views of a gas splitting nozzle for a chemical vapor deposition apparatus having a gas passage spacer according to still another embodiment of the present invention. 9A and 9B are top and side views of a gas split nozzle having a gas passage spacer applied to a chemical vapor deposition apparatus according to still another embodiment of the present invention. Figure 11 is a side elevational view of a gas splitting nozzle for use in a chemical vapor deposition apparatus having a gas channel that is skewed in accordance with an embodiment of the present invention. 11A and 11B are top and side views of a gas splitting nozzle applied to a chemical vapor deposition apparatus according to still another embodiment of the present invention, wherein a plurality of gas-flowing single-layer structures are formed.

100 gas split nozzle 102 gas split layer 104 disc-shaped body 106 circular opening 108 first gas passage 110 second gas passage 112 third gas passage

Claims (8)

A gas split nozzle for a chemical vapor deposition apparatus, comprising: a gas split layer for splitting different gases and laterally ejecting them from the same horizontal plane, the gas split layer comprising: a disc-shaped body, the center thereof The position has a circular opening for accommodating a gas distribution device and for allowing gas to pass therethrough; a plurality of first gas passages extending from a central position of the disk-shaped body toward the periphery of the disk-shaped body Arranging the first gas from the central position of the disc-shaped body to the periphery of the disc-shaped body and laterally ejecting; a plurality of second gas passages from the center position of the disc-shaped body The periphery of the disc-shaped body extends radially and is arranged to transport the second gas from the central position of the disc-shaped body to the periphery of the disc-shaped body to be laterally ejected; and a plurality of third gas passages, Arranging radially from a center position of the disc-shaped body toward a periphery of the disc-shaped body for guiding a third gas from a center position of the disc-shaped body toward a circumference of the disc-shaped body The first gas passage, the second gas passages, and the third gas passages are disposed on the same horizontal plane in the disc-shaped body and are symmetrically distributed. Different gases can be ejected laterally on the same level via different gas channels. The gas splitting nozzle applied to the chemical vapor deposition apparatus according to claim 1, wherein the first gas is a group III gas, and the second gas and the third gas are both a group V gas and hydrogen gas. (H ₂ ) or nitrogen (N ₂ ) is used as a carrier gas. A gas splitting nozzle for use in a chemical vapor deposition apparatus according to claim 1, wherein the first gas passage, the second gas passage, and the third gas passage are each adjacent to each other A gas channel or a third gas channel is interposed between at least one gas channel, and is arranged in the gas distribution layer. A gas split nozzle for use in a chemical vapor deposition apparatus according to claim 3, wherein the first gas passages, the second gas passages, and the third gas passages are in a first gas passage, The second gas passage, the first gas passage, and the third gas passage are arranged in a cycle in a cycle and are arranged in the gas distribution layer. A gas splitting nozzle for use in a chemical vapor deposition apparatus according to claim 1, wherein the first gas passage, the second gas passage, and the third gas passage are each adjacent to each other A gas channel is sandwiched between at least one second gas channel and at least one third gas channel, and is cyclically arranged in the gas distribution layer. A gas splitting nozzle applied to a chemical vapor deposition apparatus according to claim 5, wherein the second gas passage and the third gas passage between each adjacent two first gas passages are alternated with each other arrangement. The gas splitting nozzle applied to the chemical vapor deposition apparatus according to claim 5, wherein the second gas passage and the third gas passage between each adjacent two first gas passages are adjacent to each other. The second gas passages are arranged in such a manner that at least one third gas passage is sandwiched between them. The gas splitting nozzle applied to the chemical vapor deposition apparatus according to claim 5, wherein the second gas passage and the third gas passage between each adjacent two first gas passages are adjacent to each other. The third gas passages are arranged with the at least one second gas passage first gas passage interposed therebetween.