TWI609452B - Chuck device and trasfer method for element - Google Patents

Chuck device and trasfer method for element Download PDF

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Publication number
TWI609452B
TWI609452B TW105128868A TW105128868A TWI609452B TW I609452 B TWI609452 B TW I609452B TW 105128868 A TW105128868 A TW 105128868A TW 105128868 A TW105128868 A TW 105128868A TW I609452 B TWI609452 B TW I609452B
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Taiwan
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component
chuck
electrostatic chuck
conductive layer
patterned conductive
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TW105128868A
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Chinese (zh)
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TW201810511A (en
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陳銘如
吳建德
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欣興電子股份有限公司
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Description

吸盤裝置以及元件轉移方法Suction device and component transfer method

本發明是有關於一種吸盤裝置以及元件轉移方法,且特別是有關於一種具有圖案化導電層的吸盤裝置以及使用其的元件轉移方法。The present invention relates to a chuck device and a component transfer method, and more particularly to a chuck device having a patterned conductive layer and a component transfer method using the same.

一般來說,傳統電子零件組裝是藉由機械性拿取(pick-place)的方式來製作。然而,隨著元件尺寸越來越小型化,傳統的拿取方式會導致成本大幅提升。此外,當電子零件進入微米級或奈米級尺寸時,機械性拿取方式已不敷使用。雖然有人提出使用諸如吸嘴等新穎方式來取代機械性拿取方式,然而其具有成本昂貴與治具製作不易的缺點。因此,微小元件組裝陷入瓶頸。In general, conventional electronic component assembly is made by mechanical pick-place. However, as component sizes become more and more miniaturized, the traditional way of taking them leads to a significant increase in cost. In addition, when electronic components enter the micron or nanometer size, the mechanical handling method is no longer sufficient. Although it has been proposed to replace the mechanical handling method with a novel method such as a nozzle, it has the disadvantages of being expensive and difficult to manufacture. Therefore, the assembly of tiny components is in a bottleneck.

本發明提供一種吸盤裝置,藉由誘發元件與其之間產生偶極-偶極力來吸附元件。The present invention provides a chuck device that adsorbs an element by inducing a dipole-dipole force therebetween.

本發明另提供一種元件的轉移方法,能避免靜電力擊穿元件。The invention further provides a method for transferring components, which can avoid electrostatic force from damaging the components.

本發明的吸盤裝置用以吸取至少一元件。吸盤裝置包括靜電吸盤以及圖案化導電層。圖案化導電層配置於靜電吸盤上,具有暴露出部分靜電吸盤的至少一開口,其中當靜電吸盤通電時,經由至少一開口暴露出來的靜電吸盤誘發至少一元件與其之間產生偶極-偶極力,使得至少一元件經由至少一開口被吸附於部分靜電吸盤上。The chuck device of the present invention is for sucking at least one component. The chuck device includes an electrostatic chuck and a patterned conductive layer. The patterned conductive layer is disposed on the electrostatic chuck, and has at least one opening exposing a portion of the electrostatic chuck, wherein when the electrostatic chuck is energized, the electrostatic chuck exposed through the at least one opening induces a dipole-dipole force between the at least one component So that at least one component is adsorbed to a portion of the electrostatic chuck via at least one opening.

本發明的元件的轉移方法包括以下步驟。施加電壓至吸盤裝置的靜電吸盤。使吸盤裝置接近位於第一位置處的至少一元件,其中至少一元件經由至少一開口被吸附於部分靜電吸盤上。將已吸附有至少一元件的吸盤裝置由第一位置移動至第二位置。於第二位置處移除施加於吸盤裝置上的電壓,使得至少一元件自吸盤裝置上脫離而由第一位置吸取至第二位置。The method of transferring the elements of the present invention includes the following steps. Apply a voltage to the electrostatic chuck of the chuck device. The chuck device is brought close to at least one component at the first position, wherein at least one component is adsorbed to the portion of the electrostatic chuck via the at least one opening. The suction cup device to which at least one component has been adsorbed is moved from the first position to the second position. The voltage applied to the chuck device is removed at the second position such that at least one component is disengaged from the chuck device and drawn from the first position to the second position.

在本發明的一實施例中,上述的靜電吸盤包括至少一個正電極、至少一個負電極以及圍繞至少一個正電極與至少一個負電極的絕緣層。In an embodiment of the invention, the electrostatic chuck comprises at least one positive electrode, at least one negative electrode, and an insulating layer surrounding the at least one positive electrode and the at least one negative electrode.

在本發明的一實施例中,上述的至少一個正電極包括多個正電極,至少一個負電極包括多個負電極。In an embodiment of the invention, the at least one positive electrode comprises a plurality of positive electrodes, and the at least one negative electrode comprises a plurality of negative electrodes.

在本發明的一實施例中,更包括釋放層,配置於靜電吸盤與圖案化導電層之間。In an embodiment of the invention, a release layer is further disposed between the electrostatic chuck and the patterned conductive layer.

在本發明的一實施例中,上述的圖案化導電層的厚度介於1μm至5μm。In an embodiment of the invention, the patterned conductive layer has a thickness of between 1 μm and 5 μm.

在本發明的一實施例中,上述的圖案化導電層具有柵狀結構。In an embodiment of the invention, the patterned conductive layer has a grid structure.

在本發明的一實施例中,上述的至少一開口包括多個開口。In an embodiment of the invention, the at least one opening includes a plurality of openings.

在本發明的一實施例中,上述的至少一元件包括多個元件,以及多個元件分別經由多個開口被吸附於部分靜電吸盤上。In an embodiment of the invention, the at least one component includes a plurality of components, and the plurality of components are respectively adsorbed to the partial electrostatic chuck via the plurality of openings.

基於上述,本發明利用在靜電吸盤上形成圖案化導電層,使得靜電吸盤的局部區域具有靜電力。如此一來,可以藉由誘導元件與經開口暴露的靜電吸盤之間產生偶極-偶極力,使得元件經由開口被吸附於靜電吸盤上。此外,藉由設計圖案化導電層的開口排列方式,能將多個元件批次轉移至所需位置且以所需方式排列。故,吸盤裝置能廣泛地應用於具有微米或奈米等級尺寸的元件的轉移步驟中,且能避免靜電影響元件的特性。Based on the above, the present invention utilizes the formation of a patterned conductive layer on an electrostatic chuck such that a localized area of the electrostatic chuck has an electrostatic force. In this way, a dipole-dipole force can be generated between the inducing element and the electrostatic chuck exposed through the opening such that the element is attracted to the electrostatic chuck via the opening. In addition, by designing the arrangement of the openings of the patterned conductive layer, a plurality of component batches can be transferred to a desired location and arranged in a desired manner. Therefore, the chuck device can be widely applied to the transfer step of an element having a micron or nanometer size, and the static electricity can be prevented from affecting the characteristics of the element.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the invention will be apparent from the following description.

圖1A是依照本發明的一實施例的一種吸盤裝置的剖面示意圖,以及圖1B是依照本發明的一實施例的一種吸盤裝置的上視示意圖。請同時參照圖1A與圖1B,在本實施例中,吸盤裝置10包括靜電吸盤100以及圖案化導電層110。靜電吸盤100例如是包括至少一個正電極104、至少一個負電極106以及圍繞正電極104與負電極106的絕緣層108,其中電荷分佈於絕緣層108中。正電極104與負電極106是以正負極相交的方式排列。在本實施例中,靜電吸盤100例如是包括交錯排列的多個正電極104與多個負電極106。在本實施例中,正電極104與負電極106的材料例如是銅箔,但本發明不以此為限。1A is a schematic cross-sectional view of a chuck device in accordance with an embodiment of the present invention, and FIG. 1B is a top plan view of a chuck device in accordance with an embodiment of the present invention. Referring to FIG. 1A and FIG. 1B simultaneously, in the present embodiment, the chuck device 10 includes an electrostatic chuck 100 and a patterned conductive layer 110. The electrostatic chuck 100 includes, for example, at least one positive electrode 104, at least one negative electrode 106, and an insulating layer 108 surrounding the positive electrode 104 and the negative electrode 106, wherein charges are distributed in the insulating layer 108. The positive electrode 104 and the negative electrode 106 are arranged to intersect the positive and negative electrodes. In the present embodiment, the electrostatic chuck 100 includes, for example, a plurality of positive electrodes 104 and a plurality of negative electrodes 106 arranged in a staggered manner. In the present embodiment, the material of the positive electrode 104 and the negative electrode 106 is, for example, a copper foil, but the invention is not limited thereto.

圖案化導電層110配置於靜電吸盤100上,具有至少一開口112,開口112暴露出靜電吸盤100的區域102,而靜電吸盤100的其餘區域103則被圖案化導電層110覆蓋。在本實施例中,圖案化導電層110的厚度例如是介於1μm至5μm。圖案化導電層110的材料可以是光阻型導電材料。因此,圖案化導電層110可以藉由形成導電層、對導電層依序進行曝光與顯影等步驟形成。或者是,當圖案化導電層110不具有光阻特性時,則可以先於靜電吸盤100上依序形成導電層與圖案化光阻層,再以圖案化光阻層為罩幕來移除部分導電層,以形成圖案化導電層110。在本實施例中,圖案化導電層110例如是具有多個彼此分離的開口112,因此如圖1B所示,圖案化導電層110例如是具有柵狀結構。在本實施例中,開口112的寬度與長度例如是分別小於或等於100μm。The patterned conductive layer 110 is disposed on the electrostatic chuck 100 and has at least one opening 112. The opening 112 exposes the area 102 of the electrostatic chuck 100, and the remaining area 103 of the electrostatic chuck 100 is covered by the patterned conductive layer 110. In the present embodiment, the thickness of the patterned conductive layer 110 is, for example, between 1 μm and 5 μm. The material of the patterned conductive layer 110 may be a photoresist type conductive material. Therefore, the patterned conductive layer 110 can be formed by forming a conductive layer, sequentially exposing and developing the conductive layer. Alternatively, when the patterned conductive layer 110 does not have photoresist characteristics, the conductive layer and the patterned photoresist layer may be sequentially formed on the electrostatic chuck 100, and the patterned photoresist layer is used as a mask to remove portions. A conductive layer is formed to form the patterned conductive layer 110. In the present embodiment, the patterned conductive layer 110 has, for example, a plurality of openings 112 separated from each other, and thus, as shown in FIG. 1B, the patterned conductive layer 110 has, for example, a grid structure. In the present embodiment, the width and length of the opening 112 are, for example, less than or equal to 100 μm, respectively.

在本實施例中,如圖1B所示,是以多個開口112陣列排列為例,但本發明不以此為限。在另一實施例中(未繪示),根據需求,圖案化導電層110也可以僅具有一個開口112。或者是,在又一實施例中(未繪示),圖案化導電層110的多個開口112也可以具有特定排列方式而非緊密排列,諸如以彩色濾光片中的單色畫素(諸如紅色畫素、綠色畫素或藍色畫素)的排列方式。In this embodiment, as shown in FIG. 1B , an array of a plurality of openings 112 is taken as an example, but the invention is not limited thereto. In another embodiment (not shown), the patterned conductive layer 110 may also have only one opening 112, as desired. Alternatively, in yet another embodiment (not shown), the plurality of openings 112 of the patterned conductive layer 110 may also have a particular arrangement rather than a close arrangement, such as a monochromatic pixel in a color filter (such as Arrangement of red, green, or blue pixels.

在本實施例中,吸盤裝置10還包括釋放層(release layer)120,配置於靜電吸盤100與圖案化導電層110之間。釋放層120包括具備可與靜電吸盤100分離的特性,其配置有助於分離圖案化導電層110與靜電吸盤100後設置新的圖案化導電層110。在本實施例中,釋放層120例如是藉由噴塗法所形成。釋放層120的厚度例如是小於或等於0.1μm。In the present embodiment, the chuck device 10 further includes a release layer 120 disposed between the electrostatic chuck 100 and the patterned conductive layer 110. The release layer 120 includes features that are separable from the electrostatic chuck 100, the configuration of which facilitates the separation of the patterned conductive layer 110 from the electrostatic chuck 100 to provide a new patterned conductive layer 110. In the present embodiment, the release layer 120 is formed, for example, by a spray coating method. The thickness of the release layer 120 is, for example, less than or equal to 0.1 μm.

再者,如圖1A所示,雖然在本實施例中是以一個開口112下方配置有一對正負電極(包括正電極104與負電極106)為例,但本發明未對電極的數目或開口與正負電極的對應關係加以限制。舉例來說,吸盤裝置10中的正電極104與負電極106以及開口112也可以具有如圖2所示的配置方式。Furthermore, as shown in FIG. 1A, although in the present embodiment, a pair of positive and negative electrodes (including the positive electrode 104 and the negative electrode 106) are disposed under one opening 112, the number or opening of the electrodes is not in the present invention. The correspondence between positive and negative electrodes is limited. For example, the positive electrode 104 and the negative electrode 106 and the opening 112 in the chuck device 10 may also have a configuration as shown in FIG. 2.

在本實施例中,圖案化導電層110會遮蔽被其覆蓋的靜電吸盤100的區域103的靜電力,而經由開口112暴露出來的未遮蔽區域102則仍具有靜電力。因此,如圖3A與4A所示,當施加電壓至靜電吸盤100且使吸盤裝置10接近位於第一位置S1的元件130時,經由開口112暴露出來的靜電吸盤100的靜電力會誘發元件130與其之間產生偶極-偶極力,使得元件130經由開口112被吸附於部分靜電吸盤100上。也就是說,將電場集中於吸附表面(即區域102),使反面電位為零,如此加強吸附力,使得元件130被靜電吸盤100的區域102吸附而至少部分位於開口112中。In the present embodiment, the patterned conductive layer 110 shields the electrostatic force of the region 103 of the electrostatic chuck 100 covered by it, while the unmasked region 102 exposed through the opening 112 still has an electrostatic force. Therefore, as shown in FIGS. 3A and 4A, when a voltage is applied to the electrostatic chuck 100 and the chuck device 10 is brought close to the element 130 at the first position S1, the electrostatic force of the electrostatic chuck 100 exposed through the opening 112 induces the element 130 and its A dipole-dipole force is generated therebetween such that the element 130 is attracted to the portion of the electrostatic chuck 100 via the opening 112. That is, the electric field is concentrated on the adsorption surface (i.e., region 102) such that the opposite surface potential is zero, thus enhancing the adsorption force such that element 130 is adsorbed by region 102 of electrostatic chuck 100 at least partially within opening 112.

在本實施例中,元件130的尺寸可以大於、等於或小於開口112的尺寸,且元件130的尺寸例如是微米等級或奈米等級。元件130為導體或絕緣體,且元件130整體為中性。元件130例如是需要被由一位置轉移至另一位置的構件,特別是需要批次進行大量轉移的多個構件。舉例來說,元件130可以是帶有電子迴路的構件,諸如電路板、微發光二極體、快閃記憶體等積體電路晶粒等。或者是,元件130可為用於晶片封裝的構件,諸如焊球、錫膏或任何導電粒子等。在其他實施例中,元件130也可以是粒子。再者,在本實施例中,是以一個開口112對應吸附一個元件130為例,但本發明不以此為限,根據需求,一個開口112也可以同時吸附多個元件130,或者是多個開口112可一起吸附一個元件130。In the present embodiment, the size of the element 130 may be greater than, equal to, or less than the size of the opening 112, and the size of the element 130 is, for example, a micron rating or a nanometer rating. Element 130 is a conductor or insulator and element 130 is generally neutral. Element 130 is, for example, a component that needs to be transferred from one location to another, in particular a plurality of components that require a large number of transfers in a batch. For example, component 130 can be a component with an electronic circuit, such as a circuit board, a micro LED, a flash memory, or the like. Alternatively, component 130 can be a component for wafer packaging, such as solder balls, solder paste, or any conductive particles. In other embodiments, element 130 can also be a particle. Furthermore, in the present embodiment, an opening 112 corresponding to the adsorption of one component 130 is taken as an example, but the invention is not limited thereto. According to requirements, one opening 112 can also adsorb multiple components 130 at the same time, or multiple The opening 112 can adsorb one element 130 together.

接著,如圖3B與4B所示,將已吸附有元件130的吸盤裝置10由第一位置S1移動至第二位置S2後,移除施加於靜電吸盤100上的電壓,使得元件130自吸盤裝置10上脫離。如同圖1B與4B所示,元件130的排列方式對應於圖案化導電層110中開口112的排列方式。在本實施例中,元件130例如是陣列排列。Next, as shown in FIGS. 3B and 4B, after the chuck device 10 to which the component 130 has been adsorbed is moved from the first position S1 to the second position S2, the voltage applied to the electrostatic chuck 100 is removed, so that the component 130 is self-sucking the disk device. 10 off. As shown in FIGS. 1B and 4B, the arrangement of elements 130 corresponds to the arrangement of openings 112 in patterned conductive layer 110. In the present embodiment, the elements 130 are, for example, arranged in an array.

在本實施例中,由於圖案化導電層110具有多個開口112,因此藉由吸盤裝置10將多個元件130同時由第一位置S1轉移至第二位置S2。故,可藉由前述的吸盤裝置10來批次轉移多個元件130,以形成諸如微發光二極體陣列、球柵陣列封裝(Ball Grid Array,BGA)或錫膏印刷等。因此,可應用於微發光二極體、晶片封裝或表面黏著技術(Surface Mount Technology,SMT)等技術中。特別一提的是,在本實施例中,是藉由誘發元件130與其之間產生偶極-偶極力,使得元件130經由開口112被吸附於部分靜電吸盤100上,因此元件130實質上不帶靜電,故能避免元件130間互相排斥的現象,以達到排列元件130的目的。此外,亦可避免元件130中的電子迴路等構件被靜電極穿而損壞。In the present embodiment, since the patterned conductive layer 110 has a plurality of openings 112, the plurality of elements 130 are simultaneously transferred from the first position S1 to the second position S2 by the chucking device 10. Therefore, a plurality of components 130 can be batch-transferred by the aforementioned chucking device 10 to form, for example, a micro-light emitting diode array, a ball grid array (BGA) package, or a solder paste printing. Therefore, it can be applied to technologies such as micro light-emitting diodes, chip packaging, or surface mount technology (SMT). In particular, in the present embodiment, the dipole-dipole force is generated between the inducing element 130, so that the element 130 is adsorbed to the partial electrostatic chuck 100 via the opening 112, so the element 130 is substantially not Static electricity can avoid the phenomenon of mutual repulsion between the components 130 to achieve the purpose of arranging the components 130. In addition, it is also possible to prevent components such as electronic circuits in the component 130 from being damaged by the static electrodes.

綜上所述,本發明藉由在靜電吸盤上配置圖案化導電層,以在不破壞整體靜電分佈的情況下(即表面電場E=0),遮蔽部分區域的靜電力,而保留部分區域的靜電力。如此一來,可以藉由設計圖案化導電層中的開口排列方式,將多個元件批次轉移至所需位置且以所需方式排列。此外,由於吸盤裝置是藉由誘發元件與其之間產生偶極-偶極力的方式來吸取元件,因此元件本身實質上仍維持中性,故能避免元件因帶電而互斥,以及避免元件中的電子迴路等被靜電擊穿而損壞。故,吸盤裝置能廣泛地應用於微米或奈米等級尺寸元件的轉移步驟(諸如封裝等)中,以大幅降低成本與提高生產效率。In summary, the present invention retains a partial region by arranging a patterned conductive layer on the electrostatic chuck to shield the electrostatic force of the partial region without damaging the overall electrostatic distribution (ie, the surface electric field E=0). Electrostatic force. In this way, a plurality of component batches can be transferred to a desired location and arranged in a desired manner by designing an arrangement of openings in the patterned conductive layer. In addition, since the chuck device sucks the component by inducing a dipole-dipole force between the components, the component itself remains substantially neutral, so that the components are mutually exclusive due to charging, and the components are avoided. The electronic circuit or the like is damaged by electrostatic breakdown. Therefore, the chuck device can be widely applied to a transfer step of a micron or nano-scale component (such as a package, etc.) to greatly reduce cost and increase production efficiency.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

10‧‧‧吸盤裝置
100‧‧‧靜電吸盤
102、103‧‧‧區域
104‧‧‧正電極
106‧‧‧負電極
108‧‧‧絕緣層
110‧‧‧圖案化導電層
112‧‧‧開口
120‧‧‧釋放層
130‧‧‧元件
S1‧‧‧第一位置
S2‧‧‧第二位置
10‧‧‧Sucker device
100‧‧‧Electrostatic suction cup
102, 103‧‧‧ area
104‧‧‧ positive electrode
106‧‧‧Negative electrode
108‧‧‧Insulation
110‧‧‧ patterned conductive layer
112‧‧‧ openings
120‧‧‧ release layer
130‧‧‧ components
S1‧‧‧ first position
S2‧‧‧ second position

圖1A是依照本發明的一實施例的一種吸盤裝置的剖面示意圖。 圖1B是依照本發明的一實施例的一種吸盤裝置的上視示意圖。 圖2是依照本發明的一實施例的一種吸盤裝置的上視示意圖。 圖3A至圖3B是依照本發明的一實施例的一種元件的轉移方法的剖面示意圖。 圖4A至圖4B是依照本發明的一實施例的一種元件的轉移方法的上視示意圖。1A is a schematic cross-sectional view of a suction cup device in accordance with an embodiment of the present invention. 1B is a top plan view of a suction cup device in accordance with an embodiment of the present invention. 2 is a top plan view of a suction cup device in accordance with an embodiment of the present invention. 3A-3B are schematic cross-sectional views showing a method of transferring an element in accordance with an embodiment of the present invention. 4A-4B are top schematic views of a method of transferring components in accordance with an embodiment of the present invention.

10‧‧‧吸盤裝置 10‧‧‧Sucker device

100‧‧‧靜電吸盤 100‧‧‧Electrostatic suction cup

102、103‧‧‧區域 102, 103‧‧‧ area

104‧‧‧正電極 104‧‧‧ positive electrode

106‧‧‧負電極 106‧‧‧Negative electrode

108‧‧‧絕緣層 108‧‧‧Insulation

110‧‧‧圖案化導電層 110‧‧‧ patterned conductive layer

112‧‧‧開口 112‧‧‧ openings

120‧‧‧釋放層 120‧‧‧ release layer

Claims (9)

一種吸盤裝置,用以吸取至少一元件,包括: 靜電吸盤;以及 圖案化導電層,配置於所述靜電吸盤上,具有暴露出部分所述靜電吸盤的至少一開口,其中當所述靜電吸盤通電時,經由所述至少一開口暴露出來的所述靜電吸盤誘發所述至少一元件與其之間產生偶極-偶極力,使得所述至少一元件經由所述至少一開口被吸附於部分所述靜電吸盤上。a suction cup device for sucking at least one component, comprising: an electrostatic chuck; and a patterned conductive layer disposed on the electrostatic chuck, having at least one opening exposing a portion of the electrostatic chuck, wherein when the electrostatic chuck is powered The electrostatic chuck exposed through the at least one opening induces a dipole-dipole force between the at least one component and the at least one component to be adsorbed to the portion of the static electricity via the at least one opening On the suction cup. 如申請專利範圍第1項所述的吸盤裝置,其中所述靜電吸盤包括至少一個正電極、至少一個負電極以及圍繞所述至少一個正電極與所述至少一個負電極的絕緣層。The chuck device of claim 1, wherein the electrostatic chuck comprises at least one positive electrode, at least one negative electrode, and an insulating layer surrounding the at least one positive electrode and the at least one negative electrode. 如申請專利範圍第2項所述的吸盤裝置,其中所述至少一個正電極包括多個正電極,所述至少一個負電極包括多個負電極。The chuck device of claim 2, wherein the at least one positive electrode comprises a plurality of positive electrodes, and the at least one negative electrode comprises a plurality of negative electrodes. 如申請專利範圍第1項所述的吸盤裝置,更包括釋放層,配置於所述靜電吸盤與所述圖案化導電層之間。The suction cup device of claim 1, further comprising a release layer disposed between the electrostatic chuck and the patterned conductive layer. 如申請專利範圍第1項所述的吸盤裝置,其中所述圖案化導電層的厚度介於1μm至5μm。The chuck device of claim 1, wherein the patterned conductive layer has a thickness of from 1 μm to 5 μm. 如申請專利範圍第1項所述的吸盤裝置,其中所述圖案化導電層具有柵狀結構。The chuck device of claim 1, wherein the patterned conductive layer has a grid structure. 如申請專利範圍第1項所述的吸盤裝置,其中所述至少一開口包括多個開口。The suction cup device of claim 1, wherein the at least one opening comprises a plurality of openings. 如申請專利範圍第7項所述的吸盤裝置,其中所述至少一元件包括多個元件,以及所述多個元件分別經由所述多個開口被吸附於部分所述靜電吸盤上。The chuck device of claim 7, wherein the at least one component comprises a plurality of components, and the plurality of components are respectively adsorbed to a portion of the electrostatic chuck via the plurality of openings. 一種元件的轉移方法,包括: 施加電壓至如申請專利範圍第1至8項中任一項所述的吸盤裝置的所述靜電吸盤; 使所述吸盤裝置接近位於第一位置處的至少一元件,其中所述至少一元件經由所述至少一開口被吸附於部分所述靜電吸盤上; 將已吸附有所述至少一元件的所述吸盤裝置由所述第一位置移動至第二位置;以及 於第二位置處移除施加於所述吸盤裝置上的電壓,使得所述至少一元件自所述吸盤裝置上脫離而由所述第一位置吸取至所述第二位置。A method of transferring a component, comprising: applying the voltage to the electrostatic chuck of the chuck device according to any one of claims 1 to 8; bringing the chuck device to at least one component at the first position The at least one component is adsorbed to a portion of the electrostatic chuck via the at least one opening; moving the chuck device to which the at least one component has been adsorbed from the first position to a second position; The voltage applied to the chuck device is removed at a second location such that the at least one component is detached from the chuck device and is drawn from the first position to the second position.
TW105128868A 2016-09-07 2016-09-07 Chuck device and trasfer method for element TWI609452B (en)

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US20080151466A1 (en) * 2006-12-26 2008-06-26 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080151466A1 (en) * 2006-12-26 2008-06-26 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming

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