TWI606934B - Water-Vapor Barrier Material - Google Patents

Description

Water vapor barrier

The invention relates to a water gas barrier material, in particular to a water gas barrier material for blocking external water and gas from entering the photoelectric device.

In recent years, in order to increase mechanical properties such as flexibility, photovoltaic devices such as light-emitting diodes and organic solar cells have mostly been converted to plastic substrates [such as polyethylene terephthalate (PET), polycarbonate, and polyethylene. Imine (PI), etc.] are produced. However, the plastic substrate has the disadvantage of high oxygen permeability and high water vapor transmission rate. However, the cathode or active material in the photovoltaic device such as the light-emitting diode may react with oxygen and moisture to be effective. It will also result in a shortened service life of the photovoltaic device.

At present, in order to make the photovoltaic device have a low water vapor transmission rate, most of the outer layer of the device is covered with a water vapor barrier layer. In addition to the low water vapor transmission rate, this moisture barrier layer also needs to have high light transmittance. For example, " Mol.Cryst.Liq.Cryst. , Vol . 458, pp . 255-261, 2006" refers to a package film comprising a PET substrate, parylene, SiO ₂ in sequence. And SiON. The encapsulating film must contain both SiO ₂ and SiON to have 1×10 ^-5 g/m ² . The water vapor transmission rate of day and the light transmittance of more than 90% in the visible light wavelength range.

Although there are many literatures on water vapor barrier films, the polyparaxylene currently used is mainly parylene C and parylene D. As the demand for environmental protection increases, the two chlorine-containing parylenes may not be used. Therefore, polymers containing a halogen-free parylene skeleton (such as poly(p-xylene)) (parylene) must be used in the future. N)] The water vapor barrier film was studied.

Accordingly, it is an object of the present invention to provide a water vapor barrier material that meets environmental protection requirements, has a low water vapor transmission rate, and good light transmittance.

Therefore, the water vapor barrier material of the present invention comprises a modified substrate and a N group of water vapor barrier films which are formed by plasma modification of a substrate, and the N ranges from 1 to 10 Each group of water vapor barrier films is composed of the following two layers: X layers of inorganic layers, which are the same or different and cover the modified substrate, X ranges from 1 to 10, and each layer of inorganic layer is made of metal. Formed by an oxide or a metal nitride selected from the group consisting of zinc tin oxide, aluminum oxide, cerium oxide, zinc oxide, titanium oxide, indium tin oxide, or a combination thereof, and the metal nitride is selected From the combination of tantalum nitride, titanium nitride or the foregoing; and the halogen-free organic layer of the Y layer, which are the same or different and cover the inorganic layer, Y ranges from 1 to 10, and each layer of the halogen-free organic layer is composed of one a polymer of a parylene skeleton, wherein the polymer having a parylene skeleton is a polymer selected from the group consisting of poly(p-xylene), a repeating unit represented by Chemical Formula 1 and Chemical Formula 2, or the foregoing combination: R in the chemical formula 1 represents a hydroxyl group, an amine group, a vinyl group, an ethynyl group, a methyl group or an ethyl group; provided that the metal of the inorganic layer is formed when the halogen-free organic layer is formed of poly(p-xylene) The oxide is selected from the group consisting of zinc tin oxide, titanium oxide, indium tin oxide, or a combination thereof, and the metal nitride forming the inorganic layer is titanium nitride.

The effect of the present invention is that each set of water vapor barrier films in the water vapor barrier material of the present invention is composed of an X layer inorganic layer and a Y layer halogen-free organic layer, wherein the halogen-free organic layer and the inorganic layer can conform to The environmental protection requirement, and through the combination of the halogen-free organic layer and the inorganic layer, can reduce the water vapor permeability of the moisture barrier material and increase the light transmittance of the moisture barrier material. In addition, the modified substrate is subjected to a modification treatment to further have a good bonding force with the inorganic layer.

1‧‧‧modified substrate

2‧‧‧Water and Gas Barrier Film

21‧‧‧Inorganic layer

22‧‧‧ Halogen-free organic layer

3‧‧‧hard coating

Other features and effects of the present invention will be apparent from the following description of the drawings. FIG. 1 is a schematic view showing the structure of the water vapor barrier material of Embodiments 1-1 to 1-13 of the present invention. 2 is a schematic view showing the structure of a water vapor barrier material according to Embodiments 2-1 to 2-3 of the present invention; and FIG. 3 is a schematic view showing the structure of a water vapor barrier material according to Embodiment 3-1 of the present invention; Fig. 4 is a schematic view showing the structure of a water vapor barrier material according to Embodiments 4-1 to 4-2 of the present invention.

The present invention will be further illustrated by the following examples, but it should be understood that this embodiment is intended to be illustrative only and not to be construed as limiting.

Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.

The water vapor barrier material of the present invention comprises a modified substrate formed by plasma modification of a substrate and N groups of the same or different water vapor barrier films, and the range of N is 1~10. Preferably, the range of N is from 1 to 4.

Preferably, the substrate is formed from a material selected from the group consisting of polyethylene terephthalate, polyimide, polyethylene naphthalate (PEN) or a combination of the foregoing. The modified substrate is subjected to a plasma modification treatment to increase the bonding force between the modified substrate and the organic or inorganic material, that is, the inorganic material or the organic material is easily attached thereto. On the modified substrate.

Each set of water vapor barrier films is composed of two layers: the X layers are the same or different and cover the inorganic layer of the modified substrate and the halogen-free organic layer of the Y layer which is the same or different and covers the inorganic layer. The ranges of X and Y are 1 to 10, respectively. Preferably, the ranges of X and Y are 1 to 4, respectively.

Each inorganic layer is formed of a metal oxide or a metal nitride selected from the group consisting of zinc tin oxide, aluminum oxide, cerium oxide, zinc oxide, titanium oxide, indium tin oxide, or a combination thereof. And the metal nitride is selected from the group consisting of tantalum nitride, titanium nitride, or a combination thereof. Each layer of the halogen-free organic layer is formed of a polymer having a parylene skeleton, wherein the polymer having a parylene skeleton is selected from poly(p-xylene), having the chemical formula 1 and the chemical formula 2 The polymer of the repeating unit shown or a combination of the two: R in the chemical formula 1 represents a hydroxyl group, an amine group, a vinyl group, an ethynyl group, a methyl group or an ethyl group; provided that the metal of the inorganic layer is formed when the halogen-free organic layer is formed of poly(p-xylene) The oxide is selected from the group consisting of zinc tin oxide, titanium oxide, indium tin oxide, or a combination thereof, and the metal nitride forming the inorganic layer is titanium nitride.

The inorganic layer is formed of a metal oxide or a metal nitride. The inorganic layer can be prepared by known methods, for example by sputtering, in particular alloy palladium with single shot sputtering. The thickness range of each inorganic layer can be adjusted according to actual needs, especially based on the consideration of reducing water vapor permeability and improving light transmittance. Preferably, the thickness of each inorganic layer ranges from 60 to 300 nm. .

Preferably, the polymer having the repeating unit represented by Chemical Formula 1 and Chemical Formula 2 is selected from the group consisting of poly(2-methyl-p-xylene), poly(2-ethyl-p-xylene), and poly(2-vinyl). Para-xylene), poly(2-amino-p-xylene) or poly(2-hydroxy-p-xylene).

The halogen-free organic layer can be used, for example, by electroless plating. The thickness range of each layer of the halogen-free organic layer can be adjusted according to actual needs, especially based on the consideration of reducing the water vapor transmission rate and improving the light transmittance, preferably, the thickness range of the halogen-free organic layer of each layer. It is 300~1810nm.

Preferably, the moisture barrier material further comprises a hard coating layer covering the N sets of water vapor barrier films. The hard coat layer may be formed of any material that provides protection (with better hardness) without affecting light transmittance, such as, but not limited to, acrylate, epoxy Resin, etc.

[Examples 1-1 to 1-13] Water vapor barrier materials containing a set of water vapor barrier films (N = 1, X = 1 and Y = 1)

The structures of the water vapor barrier materials of Examples 1-1 to 1-13 are shown in Fig. 1, and the materials used in the respective examples were arranged in Table 1 below. The common method for preparing water vapor barrier materials of Examples 1-1 to 1-13 is:

1. The surface of the PET substrate 1 (thickness 125 μm) was cleaned with high-pressure air for 30 seconds, and then the PET substrate 1 was placed in a plasma reforming apparatus (manufactured by Kao Duen Technology Corporation, model KD-02 Plasma). At the same time, the pressure in the plasma reforming equipment is pumped to 25 mTorr, and then 5 N pure oxygen is introduced to control the working pressure below 100 mTorr, and then modified by RF power 50 W oxygen plasma. In 2 minutes, the contact angle of the PET substrate 1 was changed from about 40 to 50 degrees before the modification to about 5 degrees or less after the modification, and finally the modified PET substrate 1 was obtained.

2. Using the magnetron sputtering system, select the alloy palladium and gas according to the materials used in Table 1, and control the base pressure to 2×10 ^-6 Torr, the working pressure is 1×10 ^-3 Torr, and the argon flow rate. The inorganic layer 21 (thickness: 0.075 to 0.350 μm) was formed on the modified PET substrate 1 by a distance of 30 sccm, a gas flow rate of 10 sccm, a voltage of 1000 W, and a distance between the target and the modified PET substrate 1. When the inorganic layer of Examples 1-1 to 1-6 is zinc tin oxide, the alloy target is a zinc-tin alloy and the gas is oxygen; the inorganic layer of Examples 1-7 to 1-11 is indium tin oxide. The alloy target is an indium tin alloy and the gas is oxygen; the inorganic layer of Examples 1-12 is titanium oxide, the alloy target is titanium and the gas is oxygen; and the inorganic layer of Examples 1-13 is nitrided. Titanium, the alloy target is titanium and the gas is nitrogen.

3. Using a chemical vapor deposition system (LA CHI-ENTERPRISE CO., LTD, Model LH300), according to the material used in Table 1, the monomer material is selected, 2~4 grams of monomer is placed in the material chamber 3 cm away from the nozzle, and the modified PET substrate 1 with the inorganic layer 21 is formed. After being placed in the cavity, the cavity is evacuated until the pressure reaches 30 mTorr and the pressure of the front line is below 10 mTorr. At the same time, the temperature is raised to 120 ° C (material sublimation temperature) by the eight-stage heating, and then While continuing to rise to 650 ° C (material cracking temperature), press the system process button and the process light will illuminate. After the process lamp is extinguished, the process ends, and a layer of the halogen-free organic layer 22 (thickness of 0.4 to 1 μm) is formed on the inorganic layer 21 for a total of 3 hours, and a set of water-gas barrier films 2 are prepared.

4. First clean the surface of the water vapor barrier film 2 with high pressure air, and then place the modified PET substrate 1 formed with a set of water vapor barrier films 2 on a flat glass table, and apply the coating rod RDS No. 4 After being placed on the halogen-free organic layer 22, the appropriate acrylate is applied along the coating bar, and then pulled down from the top to the bottom at a steady speed. After the coating is completed, the ultraviolet light is hardened at 280 nm to obtain the halogen-free organic compound. A hard coat layer 3 (having a thickness of 25 to 50 μm) is formed on the layer 22, and a water gas barrier material is obtained.

[test]

The water vapor barrier materials of Examples 1-1 to 1-13 were tested as follows:

1. Water vapor transmission rate (WVTR, g/m ² .day): Tested according to the ASTM F1249 standard method. First, cut the water vapor barrier material into a sample with a width of 9 cm, and then put the sample into a water vapor transmission analyzer (model Mocon Aquatran Model 2, detection limit is 5 × 10 ^-5 g / m ² .day In the sample tank, nitrogen gas is carried into the sample and then detected by the detector; wherein the nitrogen head pressure is set to 40 psi, the sample tank flow rate is set to 20 mL/min, and the measured humidity is 90%. The temperature was 37.8 ° C and the test time was 24 to 48 hours. When the water vapor transmission rate is lower than 1.5g/m ² . On day, it can meet the current industry demand as water vapor transmission rate; when the water vapor transmission rate is equal to or lower than the detection limit of water vapor transmission analyzer 5 × 10 ^-5 g / m ² . When day, it shows that the moisture barrier is the best.

2. Light transmittance (%): Measurement was performed using a UV-VIS spectrometer (model Agilent cary 5000), first corrected with air as a background, and then the water vapor barrier material was cut into samples and placed in the UV. The test is carried out in a -VIS spectrometer with a wavelength range of 380 to 780 nm. The measured values are averaged to obtain an average light transmittance, and then the transmittance at a wavelength of 550 nm is used as the last measured light penetration. rate. Currently, the industry acceptable light transmittance is less than 80%.

[Results] :

It can be seen from the results of Table 1 that the water vapor permeability of the water vapor barrier materials of Examples 1-1 to 1-13 was less than 1.5 g/m ^{2 in the} test of 24 to 48 hours. Day, and the light transmittance is higher than 80%, showing that the water gas barrier materials of Examples 1-1 to 1-13 can meet the needs of the industry.

[Examples 2-1 to 2-3] Water vapor barrier materials containing two sets of water vapor barrier films (N = 2, X = 1 and Y = 1)

The structures of the water vapor barrier materials of Examples 2-1 to 2-3 are shown in Fig. 2, and the materials used in the respective examples were arranged in Table 2 below. The common method for preparing water vapor barrier materials of Examples 2-1 to 2-3 is:

1. The surface of the PET substrate 1 (thickness 125 μm) was cleaned with high-pressure air for 30 seconds, and then the PET substrate 1 was placed in a plasma reforming apparatus (manufactured by Kao Duen Technology Corporation, model KD-02 Plasma). At the same time, the pressure in the plasma reforming equipment is pumped to 25 mTorr, and then 5N pure oxygen is introduced to control the working pressure to be less than 100 mTorr, and then the RF power supply is 50 W oxygen plasma for 2 minutes. The contact angle of the PET substrate 1 was changed from about 40 to 50 degrees before the modification to about 5 degrees or less after the modification, and finally the modified PET substrate 1 was obtained.

2. Using the magnetron sputtering system, select the alloy palladium and gas according to the materials used in Table 2, and control the base pressure to 2×10 ^-6 Torr, the working pressure is 1×10 ^-3 Torr, and the argon flow rate. The inorganic layer 21 (thickness: 0.075 to 0.350 μm) was formed on the modified PET substrate 1 by a distance of 30 sccm, a gas flow rate of 10 sccm, a voltage of 1000 W, and a distance between the target and the modified PET substrate 1. The inorganic layers of Examples 2-1 and 2-2 were zinc tin oxide, and the alloy target was a zinc-tin alloy; the inorganic layer of Example 2-3 was titanium oxide, and the alloy target was a titanium-oxygen alloy.

3. Using a chemical vapor deposition system (LA CHI-ENTERPRISE CO., LTD, Model LH300), according to the material used in Table 1, the monomer material is selected, 2~4 grams of monomer is placed in the material chamber 3 cm away from the nozzle, and the modified PET substrate 1 with the inorganic layer 21 is formed. After being placed in the cavity, the cavity is evacuated until the pressure reaches 30 mTorr and the pressure of the front line is below 10 mTorr. At the same time, the temperature is raised to 120 ° C (material sublimation temperature) by the eight-stage heating, and then While continuing to rise to 650 ° C (material cracking temperature), press the system process button and the process light will illuminate. After the process lamp is extinguished, the process ends, and a halogen-free organic layer 22 (having a thickness of 0.4 to 1 μm) is formed on the inorganic layer 21 for a total of 3 hours, and the first group of water-gas barrier films 2 are obtained.

4. Repeat steps 2 and 3 above to form a second set of water vapor barrier film 2 on the first group of water vapor barrier films 2.

5. First clean the surface of the second group of water vapor barrier film 2 with high pressure air, and then place the modified PET substrate 1 formed with a set of water vapor barrier film 2 on the flat glass table, and apply the coating rod RDS. No. 4 is placed on the halogen-free organic layer 22, and the appropriate acrylate is applied along the coating bar, and then pulled down from the top to the bottom at a steady speed. After the coating is completed, the film is cured by ultraviolet rays at 280 nm. A hard coat layer 3 (having a thickness of 25 to 50 μm) is formed on the halogen-free organic layer 22, and a water gas barrier material is obtained.

According to the test procedure of paragraph 0020, the water vapor barrier materials prepared in Examples 2-1 to 2-3 were tested, and the results were summarized in Table 2 below.

[Results] :

It can be seen from the results of Table 2 that the water vapor transmission rates of the water vapor barrier materials of Examples 2-1 to 2-3 were less than 1.5 g/m ² in 24 to 48 hours. Both day and light transmittance are higher than 80%, indicating that the water gas barrier materials of Examples 2-1 to 2-3 can meet the needs of the industry.

[Example 3-1] A water vapor barrier material containing three sets of water vapor barrier films (N=3, X=1, and Y=1)

The structure of the water vapor barrier material of Example 3-1 is shown in Fig. 3, and the materials used are arranged in Table 3 below. The method for preparing the water vapor barrier material of Example 3-1 is:

1. The surface of the PET substrate 1 (thickness 125 μm) was cleaned with high-pressure air for 30 seconds, and then the PET substrate 1 was placed in a plasma reforming apparatus (manufactured by Kao Duen Technology Corporation, model KD-02 Plasma). At the same time, the pressure in the plasma reforming equipment is pumped to 25 mTorr, and then 5N pure oxygen is introduced to control the working pressure to be less than 100 mTorr, and then the RF power supply is 50 W oxygen plasma for 2 minutes. The contact angle of the PET substrate 1 was changed from about 40 to 50 degrees before the modification to about 5 degrees or less after the modification, and finally the modified PET substrate 1 was obtained.

2. Using magnetron sputtering system, using titanium as palladium material, controlling the base pressure to 2×10 ^-6 Torr, working pressure 1×10 ^-3 Torr, argon flow rate 30sccm, oxygen flow rate 10sccm, The voltage was 1000 W and the distance between the target and the modified PET substrate 1 was 7 cm to form an inorganic layer 21 (thickness: 0.075 to 0.350 μm) on the modified PET substrate 1 (thickness: 125 μm).

3. Using a chemical vapor deposition system (LA CHI-ENTERPRISE CO., LTD, model LH300), 2 to 4 grams of p-xylene as a monomer material and placed in the material chamber 3 cm from the nozzle, will form The modified PET substrate 1 of the inorganic layer 21 is placed in the cavity, and the cavity is evacuated until the pressure reaches 30 mTorr and the front section The line pressure is below 10 mTorr, and the temperature rises to 120 ° C (material sublimation temperature) through eight stages of temperature rise, and then continues to rise to 650 ° C (material cracking temperature), press the system process button, then the process light The number lights up. After the process lamp is extinguished, the process ends, and a halogen-free organic layer 22 (having a thickness of 0.4 to 1 μm) is formed on the inorganic layer 21 for a total of 3 hours, and the first group of water-gas barrier films 2 are obtained.

4. Repeat steps 2 and 3 above to form a second set of water vapor barrier film 2 on the first group of water vapor barrier films 2.

5. Repeat steps 2 and 3 above to form a third group of water vapor barrier films 2 on the second group of water vapor barrier films 2.

6. First clean the surface of the third group of water vapor barrier film 2 with high pressure air, and then form a first group of water gas barrier film 2, a second group of water gas barrier film 2 and a third group of water gas barrier The modified PET substrate 1 of the barrier film 2 is placed on a flat glass table, and a coating bar RDS No. 4 is placed on the halogen-free organic layer 22, and the appropriate acrylate is applied along the coating bar, from top to bottom. Pulling down at a steady speed, after the coating is completed, it is hardened by ultraviolet rays of 280 nm to form a hard coat layer 3 (thickness of 25 to 50 μm) on the halogen-free organic layer 22, and at the same time, a water-gas barrier material is obtained. .

The water vapor barrier material prepared in Example 3-1 was tested according to the test procedure of paragraph 0020, and the results were summarized in Table 3 below.

[Results] :

It can be seen from the results of Table 3 that the water vapor permeability of the water vapor barrier material of Example 3-1 was less than 1.5 g/m ^{2 in the} test of 24 to 48 hours. Both day and light transmittance are higher than 80%, indicating that the water gas barrier material of Example 3-1 can meet the needs of the industry.

[Examples 4-1 and 4-2] Water vapor barrier materials containing four sets of water vapor barrier films (N=4, X=1 and Y=1)

The structures of the water vapor barrier materials of Examples 4-1 to 4-2 are shown in Fig. 4, and the materials used in the respective examples were arranged in Table 4 below. The common method for preparing water vapor barrier materials of Examples 4-1 to 4-2 is as follows:

1. The surface of the PET substrate 1 (thickness 125 μm) was cleaned with high-pressure air for 30 seconds, and then the PET substrate 1 was placed in a plasma reforming apparatus (manufactured by Kao Duen Technology Corporation, model KD-02 Plasma). At the same time, the pressure in the plasma reforming equipment is pumped to 25 mTorr, and then 5N pure oxygen is introduced to control the working pressure to be less than 100 mTorr, and then the RF power supply is 50 W oxygen plasma for 2 minutes. The contact angle of the PET substrate 1 was changed from about 40 to 50 degrees before the modification to about 5 degrees or less after the modification, and finally the modified PET substrate 1 was obtained.

2. Using magnetron sputtering system, zinc-tin alloy is used as alloy palladium, and the base pressure is 2×10 ^-6 Torr, working pressure is 1×10 ^-3 Torr, argon flow rate is 30sccm, oxygen flow rate It was 10 sccm, the voltage was 1000 W, and the distance between the target and the modified PET substrate 1 was 7 cm to form an inorganic layer 21 (thickness: 0.075 to 0.350 μm) on the modified PET substrate 1 (thickness: 125 μm).

3. Using a chemical vapor deposition system (LA CHI-ENTERPRISE CO., LTD, model LH300), 2 to 4 grams of p-xylene as a monomer material and placed in the material chamber 3 cm from the nozzle, will form The modified PET substrate 1 of the inorganic layer 21 is placed in the cavity, and the cavity is evacuated until the pressure reaches 30 mTorr and the pressure of the front line is below 10 mTorr, while the temperature is increased through the eight stages. rise to At 120 ° C (material sublimation temperature), and then continue to rise to 650 ° C (material cracking temperature), press the system process button, then the process light will light up. After the process lamp is extinguished, the process ends, and a halogen-free organic layer 22 (having a thickness of 0.4 to 1 μm) is formed on the inorganic layer 21 for a total of 3 hours, and the first group of water-gas barrier films 2 are obtained.

4. Repeat steps 2 and 3 above to form a second set of water vapor barrier film 2 on the first group of water vapor barrier films 2.

5. Repeat steps 2 and 3 above to form a third group of water vapor barrier films 2 on the second group of water vapor barrier films 2.

6. Repeat steps 2 and 3 above to form a fourth group of water vapor barrier films 2 on the third group of water vapor barrier films 2.

7. First clean the surface of the fourth group of water vapor barrier film 2 with high pressure air, and then form a first group of water gas barrier film 2, a second group of water gas barrier film 2, and a third group of water gas barrier The modified PET substrate 1 of the barrier film 2 and the fourth group of water vapor barrier film 2 is placed on a flat glass table, and a coating bar RDS No. 4 is placed on the halogen-free organic layer 22, and is coated along the coating bar. After the appropriate acrylate is applied, the film is pulled down from the top to the bottom at a steady rate. After the coating is completed, it is hardened by ultraviolet rays of 280 nm to form a hard coat layer 3 on the halogen-free organic layer 22 (thickness 25 to 50 μm). ), at the same time, the production of water and gas barrier materials.

According to the test procedure of paragraph 0020, the water vapor barrier materials prepared in Examples 4-1 to 4-2 were tested, and the results were summarized in Table 4 below.

[Table 4]

[Results] :

It can be seen from the results in Table 4 that the water vapor transmission rates of the water vapor barrier materials of Examples 4-1 to 4-2 were less than 1.5 g/m ² in 24 to 48 hours. Day, even less than 5 × 10 ^-5 g / m ² . Day, showing that the water vapor barrier of the water vapor barrier materials of Examples 4-1 to 4-2 is the best. As far as the light transmittance is concerned, the light transmittance of the water vapor barrier materials of Examples 4-1 to 4-2 is higher than 80%, and the water gas barrier materials of Examples 4-1 to 4-2 are shown. Can meet the needs of the industry.

In summary, each group of water vapor barrier films in the water vapor barrier material of the present invention is composed of an X layer inorganic layer and a Y layer halogen-free organic layer, wherein the halogen-free organic layer and the inorganic layer are environmentally friendly. The requirement is that, by the combination of the halogen-free organic layer and the inorganic layer, the water vapor permeability of the moisture barrier material can be reduced and the light transmittance of the water vapor barrier material can be improved, so that the present invention can be achieved. The purpose of the invention.

However, the above is only the embodiment of the present invention, and the scope of the invention is not limited thereto, and all the equivalent equivalent changes and modifications according to the scope of the patent application and the patent specification of the present invention are still The scope of the invention is covered.

1‧‧‧modified substrate

2‧‧‧Water and Gas Barrier Film

21‧‧‧Inorganic layer

22‧‧‧ Halogen-free organic layer

3‧‧‧hard coating

Claims (7)

A water gas barrier material comprising: a layer of modified substrate, which is formed by plasma modification of a substrate; N groups of water gas barrier films which are the same or different from each other, and the range of N ranges from 1 to 10 Each group of water vapor barrier films is composed of the following two layers: X-layer inorganic layers, which are the same or different and cover the modified substrate, X ranges from 1 to 10, and each inorganic layer is oxidized by metal. Formed by a substance or a metal nitride selected from the group consisting of zinc tin oxide, aluminum oxide, cerium oxide, zinc oxide, titanium oxide, indium tin oxide or a combination thereof, and the metal nitride is selected from In the combination of tantalum nitride, titanium nitride or the foregoing; and the halogen-free organic layer of the Y layer, which are the same or different and cover the inorganic layer, Y ranges from 1 to 10, and each layer of the halogen-free organic layer is composed of a poly Forming a polymer of a p-xylene skeleton, wherein the polymer having a parylene skeleton is a polymer selected from poly(p-xylene), having a repeating unit represented by Chemical Formula 1 and Chemical Formula 2, or a combination thereof : R in the chemical formula 1 represents a hydroxyl group, an amine group, a vinyl group, an ethynyl group, a methyl group or an ethyl group; provided that the metal of the inorganic layer is formed when the halogen-free organic layer is formed of poly(p-xylene) The oxide is selected from the group consisting of zinc tin oxide, titanium oxide, indium tin oxide or a combination thereof, and the metal nitride forming the inorganic layer is titanium nitride; a hard coat layer covering the N group of water gas barrier Barrier film. The moisture barrier material according to claim 1, wherein each of the inorganic layers is formed of zinc tin oxide. The moisture barrier material according to claim 1, wherein each of the inorganic layers has a thickness ranging from 60 to 300 nm. The moisture barrier material according to claim 1, wherein the thickness of each of the halogen-free organic layers ranges from 300 to 1810 nm. The moisture barrier material according to claim 1, wherein N is 1, X is 1 and Y is 1. The moisture barrier material according to claim 1, wherein N is 2, X is 1 and Y is 1. The moisture barrier material according to claim 1, wherein N is 4, X is 1 and Y is 1.