TWI606693B - High voltage power apparatus - Google Patents
High voltage power apparatus Download PDFInfo
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- TWI606693B TWI606693B TW106102917A TW106102917A TWI606693B TW I606693 B TWI606693 B TW I606693B TW 106102917 A TW106102917 A TW 106102917A TW 106102917 A TW106102917 A TW 106102917A TW I606693 B TWI606693 B TW I606693B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0083—Converters characterised by their input or output configuration
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Description
本發明是有關於一種高壓裝置,且特別是有關於一種採用中壓開關來傳輸高壓的高壓電源裝置。 This invention relates to a high voltage apparatus, and more particularly to a high voltage power supply unit that uses a medium voltage switch to transmit high voltage.
理論上,高壓開關元件可被使用在高壓裝置中,以使高壓裝置可提供負載所需之高電壓。然而,相對於中壓開關元件來說,高壓開關元件的電路面積通常較中壓開關元件的電路面積大上許多,且高壓開關元件的導通電阻值也較中壓開關元件的導通電阻值大。除此之外,高壓開關元件的臨界電壓值較高,速度較慢,且具有較嚴重的基體效應,致使採用高壓開關元件的高壓裝置的成本較高,效能亦較差。 In theory, high voltage switching elements can be used in high voltage devices to enable high voltage devices to provide the high voltages required for the load. However, compared with the medium voltage switching element, the circuit area of the high voltage switching element is generally much larger than the circuit area of the medium voltage switching element, and the on-resistance value of the high voltage switching element is also higher than the on-resistance value of the medium voltage switching element. Big. In addition, the high voltage switching element has a higher critical voltage value, a slower speed, and a more serious matrix effect, resulting in higher cost and lower efficiency of the high voltage device using the high voltage switching element.
因此,中壓開關元件便廣泛地應用在高壓裝置中。然而,高壓裝置中的中壓開關元件可能會承受不了高電壓而發生崩潰。除此之外,現行採用中壓開關元件的高壓裝置,其內部的工作電壓的範圍通常會受到侷限,致使輸出電壓的範圍被侷限。因此,如何避免高壓裝置中的中壓開關元件因高壓而崩潰,且提昇高壓裝置所能正常運作的工作電壓的範圍,並避免輸出電壓的電壓範 圍被侷限,已是高壓裝置在設計上的重要課題。 Therefore, medium voltage switching elements are widely used in high voltage devices. However, medium voltage switching elements in high voltage devices may not withstand high voltages and collapse. In addition, in the current high-voltage devices using medium-voltage switching elements, the range of internal operating voltage is usually limited, so that the range of the output voltage is limited. Therefore, how to avoid the breakdown of the medium voltage switching element in the high voltage device due to the high voltage, and the range of the operating voltage that can improve the normal operation of the high voltage device, and avoid the voltage range of the output voltage The limitation of the circumference is an important issue in the design of high-voltage devices.
有鑑於此,本發明提供一種高壓電源裝置,其內部的中壓開關元件不會因高壓電源裝置操作在高壓的電源電壓下而發生崩潰,且可提昇高壓電源裝置可正常運作的電源電壓的範圍以及其輸出電壓的範圍。 In view of the above, the present invention provides a high-voltage power supply device in which an internal medium-voltage switching element does not collapse due to operation of a high-voltage power supply device under a high-voltage power supply voltage, and can improve a range of a power supply voltage at which a high-voltage power supply device can operate normally. And the range of its output voltage.
本發明的高壓電源裝置包括M個第一中壓開關、M個第一開關串聯組、第二開關串聯組以及L個第一電流源。M個第一中壓開關依序串接,且串接在電源電壓與高壓電源裝置的輸出端之間。M個第一中壓開關分別受控於M個第一偏壓電壓,以將電源電壓傳輸至輸出端,其中M為大於或等於二的整數。M個第一開關串聯組包括輔助開關串聯組以及L個偏壓開關串聯組,其中M個第一開關串聯組中的每一者的第一端耦接電源電壓,且M個第一開關串聯組的每一者的第二端產生M個第一偏壓電壓的其中一者,其中L=M-1。第二開關串聯組耦接在輔助開關串聯組的第二端與接地電壓之間。第二開關串聯組用以限制流經輔助開關串聯組的電流,且受控於控制信號而啟閉,致使輔助開關串聯組產生對應的第一偏壓電壓。L個第一電流源中的每一者耦接在L個偏壓開關串聯組中的其中一對應者的第二端與接地電壓之間,以提供對應的偏壓開關串聯組運作所需的第一偏壓電流。 The high voltage power supply device of the present invention includes M first medium voltage switches, M first switch series groups, second switch series groups, and L first current sources. The M first medium voltage switches are serially connected in series and connected in series between the power supply voltage and the output of the high voltage power supply device. The M first medium voltage switches are respectively controlled by M first bias voltages to transmit a power supply voltage to the output, where M is an integer greater than or equal to two. The M first switch series groups include an auxiliary switch series group and L bias switch series groups, wherein a first end of each of the M first switch series groups is coupled to a power supply voltage, and the M first switches are connected in series The second end of each of the groups produces one of M first bias voltages, where L = M-1. The second switch series is coupled between the second end of the auxiliary switch series group and the ground voltage. The second switch series is used to limit the current flowing through the series of auxiliary switches, and is controlled to be turned on and off by the control signal, so that the auxiliary switch series group generates a corresponding first bias voltage. Each of the L first current sources is coupled between the second end of one of the L bias switch series groups and the ground voltage to provide a corresponding series operation of the bias switch series The first bias current.
在本發明的一實施例中,上述的M個第一開關串聯組中 的每一者包括多個第二中壓開關。此些第二中壓開關依序串接,且串接在電源電壓與對應的第一開關串聯組的第二端之間。 In an embodiment of the invention, the M first switches are connected in series Each of them includes a plurality of second medium voltage switches. The second medium voltage switches are serially connected in series and connected in series between the power supply voltage and the second end of the corresponding first switch series group.
在本發明的一實施例中,上述的M個第一開關串聯組中的每一者的此些第二中壓開關為多個電晶體,其中此些電晶體中的第一級電晶體的源極端耦接電源電壓,此些電晶體中的每一者的閘極端與汲極端相耦接並耦接至下一級電晶體的源極端,且此些電晶體中的最後一級電晶體的閘極端與汲極端相耦接並耦接至對應的第一開關串聯組的第二端,其中至少部份此些電晶體的基體為彼此共用並耦接至所述至少部份此些電晶體中的一最高電位,且所述至少部份此些電晶體的數量由電晶體的崩潰電壓與臨界電壓來決定。 In an embodiment of the present invention, the second medium voltage switches of each of the M first switch series groups are a plurality of transistors, wherein the first stage transistors of the plurality of transistors The source terminal is coupled to the power supply voltage, and the gate terminal of each of the transistors is coupled to the drain terminal and coupled to the source terminal of the next-stage transistor, and the gate of the last-stage transistor in the transistors The terminal is coupled to the second end of the corresponding first switch series, wherein at least a portion of the transistors are shared with each other and coupled to the at least a portion of the transistors a maximum potential, and the number of the at least some of the transistors is determined by the breakdown voltage and the threshold voltage of the transistor.
在本發明的一實施例中,上述的M個第一開關串聯組中的每一者的此些第二中壓開關為多個二極體,其中此些二極體中的第一級二極體的陽極端耦接電源電壓,此些二極體中的每一者的陰極端耦接至下一級二極體的陽極端,且此些二極體中的最後一級二極體的陰極端耦接至對應的第一開關串聯組的第二端。 In an embodiment of the present invention, the second intermediate voltage switches of each of the M first switch series groups are a plurality of diodes, wherein the first two of the two diodes The anode end of the polar body is coupled to the power supply voltage, and the cathode end of each of the diodes is coupled to the anode end of the lower diode, and the last one of the diodes is negative. Extremely coupled to the second end of the corresponding first switch series set.
在本發明的一實施例中,上述的M個第一中壓開關包括多個電晶體。此些電晶體中的第一級電晶體的源極端耦接電源電壓,此些電晶體的每一者的汲極端耦接至下一級電晶體的源極端,且此些電晶體中的最後一級電晶體的汲極端耦接至輸出端。此些電晶體中的第一級電晶體的閘極端耦接輔助開關串聯組的第二端,且此些電晶體中的第J級電晶體的閘極端耦接上述L個偏 壓開關串聯組中的第I個偏壓開關串聯組的第二端,其中J=I+1,且I為小於或等於L的正整數。 In an embodiment of the invention, the M first medium voltage switches include a plurality of transistors. The source terminals of the first-stage transistors in the transistors are coupled to a power supply voltage, and the 汲 terminal of each of the transistors is coupled to the source terminal of the lower-level transistor, and the last stage of the transistors The 汲 terminal of the transistor is coupled to the output. The gate terminal of the first-stage transistor of the plurality of transistors is coupled to the second end of the series of auxiliary switches, and the gate terminals of the J-stage transistors of the transistors are coupled to the L-bias The second end of the first series of bias switch switches in the series of voltage switches, wherein J=I+1, and I is a positive integer less than or equal to L.
在本發明的一實施例中,上述的輔助開關串聯組中的此些第二中壓開關的數量,由此些電晶體的崩潰電壓及此些電晶體的臨界電壓決定。上述的L個偏壓開關串聯組中的第I個偏壓開關串聯組的此些第二中壓開關的數量,由電源電壓的最大值、此些電晶體中的第J級電晶體的源極端的電壓以及此些電晶體的臨界電壓決定。 In an embodiment of the invention, the number of the second medium voltage switches in the series of auxiliary switches is determined by the breakdown voltage of the transistors and the threshold voltage of the transistors. The number of the second intermediate voltage switches of the first pair of bias switches in the series of L bias switches is set by the maximum value of the power supply voltage, the source of the Jth transistor in the transistors The extreme voltage and the threshold voltage of these transistors are determined.
在本發明的一實施例中,上述的高壓電源裝置更包括輔助元件。輔助元件耦接在第一級電晶體的源極端與閘極端之間,以輔助控制第一級電晶體的啟閉運作。 In an embodiment of the invention, the high voltage power supply device further includes an auxiliary component. The auxiliary component is coupled between the source terminal and the gate terminal of the first-stage transistor to assist in controlling the opening and closing operation of the first-stage transistor.
在本發明的一實施例中,上述的輔助元件為電阻或電流源。 In an embodiment of the invention, the auxiliary component is a resistor or current source.
在本發明的一實施例中,M為大於二的整數,且上述的高壓電源裝置更包括W個二極體。此W個二極體中的第X個二極體的陽極端耦接至此些電晶體中的第Y級電晶體的源極端,且第X個二極體的陰極端耦接至第Y個偏壓開關串聯組中的第Z個第二中壓開關的汲極端,其中W=M-2,Y=X+1,X為小於或等於W的正整數,且Z由電源電壓的最大值、此些電晶體中的第Y級電晶體的源極端的電壓以及此些電晶體的臨界電壓來決定。 In an embodiment of the invention, M is an integer greater than two, and the high voltage power supply device further includes W diodes. The anode end of the Xth diode of the W diodes is coupled to the source terminal of the Yth transistor in the transistors, and the cathode end of the Xth diode is coupled to the Yth The 汲 terminal of the Zth second medium voltage switch in the series of bias switches, where W=M-2, Y=X+1, X is a positive integer less than or equal to W, and Z is the maximum value of the power supply voltage The voltage at the source terminal of the Y-th transistor in the transistors and the threshold voltage of the transistors are determined.
在本發明的一實施例中,M等於二,且上述的第二開關串聯組包括電阻以及輸入中壓開關。電阻的第一端耦接輔助開關 串聯組的第二端。輸入中壓開關耦接在電阻的第二端與接地電壓之間,且受控於控制信號而啟閉。 In an embodiment of the invention, M is equal to two, and the second series of switches described above includes a resistor and an input medium voltage switch. The first end of the resistor is coupled to the auxiliary switch The second end of the series. The input medium voltage switch is coupled between the second end of the resistor and the ground voltage, and is controlled to open and close by a control signal.
在本發明的一實施例中,上述的電源電壓為正電高壓,M個第一中壓開關的每一者以及此些第二中壓開關的每一者為P型金氧半場效電晶體,且輸入中壓開關為N型金氧半場效電晶體。 In an embodiment of the invention, the power supply voltage is a positive high voltage, and each of the M first medium voltage switches and each of the second medium voltage switches are P-type gold oxide half field effect transistors. And the input medium voltage switch is an N-type gold oxygen half field effect transistor.
在本發明的一實施例中,上述的電源電壓為負電高壓,M個第一中壓開關的每一者以及此些第二中壓開關的每一者為N型金氧半場效電晶體,且輸入中壓開關為P型金氧半場效電晶體。 In an embodiment of the invention, the power supply voltage is a negative power high voltage, and each of the M first medium voltage switches and each of the second medium voltage switches are N-type gold-oxygen half field effect transistors. And the input medium voltage switch is a P-type gold oxygen half field effect transistor.
在本發明的一實施例中,M為大於二的整數,且上述的第二開關串聯組包括電阻、L個第三中壓開關、第二電流源以及輸入中壓開關。電阻的第一端耦接輔助開關串聯組的第二端。L個第三中壓開關中的第一級第三中壓開關至第L級第三中壓開關依序串接,且依序串接在電阻的第二端與第一節點之間。第二電流源耦接在第一節點與接地電壓之間,以提供輔助開關串聯組運作所需的第二偏壓電流。輸入中壓開關耦接在第一節點與接地電壓之間,且受控於控制信號而啟閉。第一級第三中壓開關至第W級第三中壓開關分別受控於W個第二偏壓電壓,且第L級第三中壓開關受控於輸入偏壓電壓,以防止輸入中壓開關發生崩潰,其中W=M-2。 In an embodiment of the invention, M is an integer greater than two, and the second series of switches includes a resistor, L third intermediate voltage switches, a second current source, and an input medium voltage switch. The first end of the resistor is coupled to the second end of the series of auxiliary switches. The first intermediate third intermediate switch to the Lth third intermediate voltage switch of the L third intermediate voltage switches are serially connected in series, and are sequentially connected in series between the second end of the resistor and the first node. The second current source is coupled between the first node and the ground voltage to provide a second bias current required for the auxiliary switch to operate in series. The input medium voltage switch is coupled between the first node and the ground voltage, and is controlled to open and close by the control signal. The third intermediate medium voltage switch of the first stage to the third medium voltage switch of the Wth stage are respectively controlled by the W second bias voltages, and the third intermediate medium voltage switch of the Lth stage is controlled by the input bias voltage to prevent the input. The pressure switch crashes, where W=M-2.
在本發明的一實施例中,上述的高壓電源裝置更包括電流鏡電路。電流鏡電路用以接收輸入偏壓電壓,並據以產生W個第二偏壓電壓。 In an embodiment of the invention, the high voltage power supply device further includes a current mirror circuit. The current mirror circuit is configured to receive the input bias voltage and thereby generate W second bias voltages.
在本發明的一實施例中,上述的電流鏡電路包括參考電路以及W個映射電路。參考電路用以接收輸入偏壓電壓,並據以產生參考電壓。W個映射電路用以接收參考電壓,並據以產生W個第二偏壓電壓。 In an embodiment of the invention, the current mirror circuit includes a reference circuit and W mapping circuits. The reference circuit is configured to receive the input bias voltage and thereby generate a reference voltage. The W mapping circuits are configured to receive a reference voltage and thereby generate W second bias voltages.
在本發明的一實施例中,上述的參考電路包括第三開關串聯組、二極體以及第四開關串聯組。第三開關串聯組具有至少一第四中壓開關。此至少一第四中壓開關依序串接,且串接在電源電壓與第二節點之間,其中此至少一第四中壓開關中的第一級第四中壓開關產生參考電壓。二極體的陽極端接收輸入偏壓電壓,且二極體的陰極端產生箝制電壓。第四開關串聯組耦接在第二節點與接地電壓之間,用以受控於輸入偏壓電壓及箝制電壓而提供第三開關串聯組運作所需的第三偏壓電流。 In an embodiment of the invention, the reference circuit includes a third switch series group, a diode, and a fourth switch series group. The third switch series group has at least one fourth medium voltage switch. The at least one fourth medium voltage switch is serially connected in series, and is serially connected between the power supply voltage and the second node, wherein the first intermediate fourth intermediate voltage switch of the at least one fourth medium voltage switch generates a reference voltage. The anode terminal of the diode receives the input bias voltage and the cathode terminal of the diode generates a clamping voltage. The fourth switch series is coupled between the second node and the ground voltage for controlling the input bias voltage and the clamping voltage to provide a third bias current required for the third switch series operation.
在本發明的一實施例中,上述的至少一第四中壓開關為至少一電晶體。此至少一電晶體中的第一級電晶體的源極端耦接電源電壓,此至少一電晶體中的每一者的閘極端與汲極端相耦接並耦接至下一級電晶體的源極端,且此至少一電晶體中的最後一級電晶體的閘極端與汲極端相耦接並耦接至第二節點,其中第一級電晶體的閘極端產生參考電壓,且至少部份電晶體的基體為彼此共用並耦接至所述至少部份電晶體中的最高電位,且所述至少部份電晶體的數量由電晶體的崩潰電壓與臨界電壓來決定。 In an embodiment of the invention, the at least one fourth medium voltage switch is at least one transistor. a source terminal of the first-stage transistor in the at least one transistor is coupled to a power supply voltage, and a gate terminal of each of the at least one transistor is coupled to the 汲 terminal and coupled to a source terminal of the lower-level transistor And the gate terminal of the last transistor of the at least one transistor is coupled to the 汲 terminal and coupled to the second node, wherein the gate terminal of the first stage transistor generates a reference voltage, and at least a portion of the transistor The substrates are shared with each other and coupled to a highest potential in the at least part of the transistors, and the number of the at least partial transistors is determined by a breakdown voltage and a threshold voltage of the transistors.
在本發明的一實施例中,上述的至少一第四中壓開關的數量由電源電壓的最小值以及此些電晶體的臨界電壓決定。 In an embodiment of the invention, the number of the at least one fourth medium voltage switch is determined by a minimum value of the power supply voltage and a threshold voltage of the transistors.
在本發明的一實施例中,上述的第四開關串聯組包括第三電流源以及兩個第五中壓開關。第三電流源的第一端耦接接地電壓。此兩個第五中壓開關分別受控於箝制電壓及輸入偏壓電壓。此兩個第五中壓開關依序串接,且串接在第二節點與第三電流源的第二端之間。 In an embodiment of the invention, the fourth switch series group includes a third current source and two fifth medium voltage switches. The first end of the third current source is coupled to the ground voltage. The two fifth medium voltage switches are respectively controlled by the clamping voltage and the input bias voltage. The two fifth medium voltage switches are serially connected in series, and are connected in series between the second node and the second end of the third current source.
在本發明的一實施例中,上述的W個映射電路中的第K級映射電路產生W個第二偏壓電壓的其中一對應者以控制第K級第三中壓開關,且K為小於或等於W的正整數。上述的第K級映射電路包括第五開關串聯組以及U個第六中壓開關。第五開關串聯組具有多個第七中壓開關,其中此些第七中壓開關依序串接,且串接在第三節點與接地電壓之間以產生對應的第二偏壓電壓。此U個第六中壓開關中的第一級第六中壓開關至第U級第六中壓開關依序串接,且依序串接在電源電壓與第三節點之間。第一級第六中壓開關反應於參考電壓而產生第五開關串聯組運作所需的第四偏壓電流,其中此U個第六中壓開關的數量,由電源電壓的最大值、第K級映射電路的第二偏壓電壓與此U個第六中壓開關的崩潰電壓來決定。此W個映射電路中的第一級映射電路的第三節點更耦接至二極體的陰極端。 In an embodiment of the invention, the Kth stage mapping circuit of the W mapping circuits generates one of the W second bias voltages to control the Kth third intermediate voltage switch, and K is less than Or a positive integer equal to W. The K-th stage mapping circuit described above includes a fifth switch series group and U sixth medium voltage switches. The fifth switch series group has a plurality of seventh medium voltage switches, wherein the seventh medium voltage switches are serially connected in series, and are connected in series between the third node and the ground voltage to generate a corresponding second bias voltage. The first sixth sixth intermediate switch to the sixth sixth intermediate voltage switch of the U sixth intermediate voltage switches are serially connected in series, and are serially connected between the power supply voltage and the third node. The sixth intermediate voltage switch of the first stage reacts with the reference voltage to generate a fourth bias current required for the operation of the fifth switch series group, wherein the number of the sixth sixth medium voltage switches is determined by the maximum value of the power supply voltage, the Kth The second bias voltage of the stage mapping circuit is determined by the breakdown voltage of the U sixth medium voltage switches. The third node of the first stage mapping circuit of the W mapping circuits is further coupled to the cathode end of the diode.
在本發明的一實施例中,M為大於三的整數,且上述的高壓電源裝置更包括F個第六開關串聯組,其中F=M-3。F個第六開關串聯組中的每一者包括多個第八中壓開關以及第四電流源。此些第八中壓開關依序串接,且串接在電源電壓與第四節點 之間。第四電流源耦接在第四節點與接地電壓之間。F個第六開關串聯組中的第H個第六開關串聯組的此些第八中壓開關的數量,等於上述L個偏壓開關串聯組中的第H個偏壓開關串聯組的此些第二中壓開關的數量,其中H為小於或等於F的正整數。 In an embodiment of the invention, M is an integer greater than three, and the high voltage power supply device further includes F sixth switch series groups, wherein F=M-3. Each of the F sixth switch series groups includes a plurality of eighth medium voltage switches and a fourth current source. The eighth medium voltage switches are serially connected in series, and are connected in series with the power supply voltage and the fourth node. between. The fourth current source is coupled between the fourth node and the ground voltage. The number of the eighth intermediate voltage switches of the Hth sixth switch series group in the F sixth switch series group is equal to the number of the Hth bias switch series group in the L bias switch series group The number of second medium voltage switches, where H is a positive integer less than or equal to F.
在本發明的一實施例中,此些第八中壓開關為多個電晶體,其中此些電晶體中的第一級電晶體的源極端耦接電源電壓,此些電晶體中的每一者的閘極端與汲極端相耦接並耦接至下一級電晶體的源極端,且此些電晶體中的最後一級電晶體的閘極端與汲極端相耦接並耦接至第四節點,其中至少部份此些電晶體的基體為彼此共用並耦接至所述至少部份此些電晶體中的最高電位,且所述至少部份此些電晶體的數量由電晶體的崩潰電壓與臨界電壓來決定。 In an embodiment of the invention, the eighth medium voltage switch is a plurality of transistors, wherein a source terminal of the first stage transistor of the plurality of transistors is coupled to a power supply voltage, and each of the transistors The gate terminal is coupled to the 汲 terminal and coupled to the source terminal of the lower stage transistor, and the gate terminal of the last stage transistor of the plurality of transistors is coupled to the 汲 terminal and coupled to the fourth node, At least a portion of the substrates of the plurality of transistors are shared with each other and coupled to a highest potential of the at least a portion of the plurality of transistors, and the at least a portion of the number of such transistors is determined by a breakdown voltage of the transistor The threshold voltage is determined.
在本發明的一實施例中,上述的第K級映射電路中的第V級第六中壓開關的閘極端,耦接至F個第六開關串聯組中的第T個第六開關串聯組的第四節點,其中V為小於或等於U且大於或等於二的整數,且T=V-1。 In an embodiment of the present invention, the gate terminal of the sixth intermediate voltage switch of the Vth stage in the Kth stage mapping circuit is coupled to the Tth sixth switch series group of the F sixth switch series groups. The fourth node, where V is an integer less than or equal to U and greater than or equal to two, and T = V-1.
在本發明的一實施例中,上述的多個第八中壓開關為多個二極體,其中此些二極體中的第一級二極體的陽極端耦接電源電壓,此些二極體中的每一者的陰極端耦接至下一級二極體的陽極端,且此些二極體中的最後一級二極體的陰極端耦接至第四節點。 In an embodiment of the invention, the plurality of eighth intermediate voltage switches are a plurality of diodes, wherein the anode ends of the first diodes of the plurality of diodes are coupled to a power supply voltage, and the second The cathode end of each of the pole bodies is coupled to the anode end of the next-stage diode, and the cathode end of the last-stage diode of the two diodes is coupled to the fourth node.
在本發明的一實施例中,上述的多個第七中壓開關為多 個電晶體,其中此些電晶體中的第一級電晶體的源極端耦接接地電壓,此些電晶體中的每一者的閘極端與汲極端相耦接並耦接至下一級電晶體的源極端,且此些電晶體中的最後一級電晶體的閘極端與汲極端相耦接並耦接至第三節點,其中至少部份此些電晶體的基體為彼此共用並耦接至所述至少部份此些電晶體中的最低電位,且所述至少部份此些電晶體的數量由電晶體的崩潰電壓與臨界電壓來決定。 In an embodiment of the invention, the plurality of seventh medium voltage switches are more a transistor, wherein a source terminal of the first-stage transistor of the plurality of transistors is coupled to a ground voltage, and a gate terminal of each of the transistors is coupled to the 汲 terminal and coupled to the next-stage transistor a source terminal, and a gate terminal of the last transistor of the plurality of transistors is coupled to the 汲 terminal and coupled to the third node, wherein at least a portion of the substrates of the transistors are shared with each other and coupled to the The lowest potential of at least some of the transistors is described, and the number of the at least some of the transistors is determined by the breakdown voltage and the threshold voltage of the transistor.
在本發明的一實施例中,上述的W個映射電路中的第一級映射電路的第五開關串聯組的此些電晶體的數量,由此些電晶體的崩潰電壓、此些電晶體的臨界電壓與輸入偏壓電壓來決定。上述的W個映射電路中的第Y級映射電路的第五開關串聯組的此些電晶體的數量,由此些電晶體的崩潰電壓與W個映射電路中的第X級映射電路的第二偏壓電壓來決定,其中X=Y-1,且Y為小於或等於W以及大於或等於二的整數。 In an embodiment of the present invention, the fifth switch of the first stage mapping circuit of the above-mentioned W mapping circuits is in series with the number of the transistors, and thus the breakdown voltage of the transistors, the transistors The threshold voltage is determined by the input bias voltage. The fifth switch of the Y-th mapping circuit in the above-mentioned W mapping circuits is connected in series with the number of such transistors, and thus the breakdown voltage of the transistors and the second of the X-th mapping circuits in the W mapping circuits The bias voltage is used to determine where X = Y-1 and Y is an integer less than or equal to W and greater than or equal to two.
在本發明的一實施例中,上述的多個第七中壓開關為多個二極體,其中此些二極體中的第一級二極體的陰極端耦接接地電壓,此些二極體中的每一者的陽極端耦接至下一級二極體的陰極端,且此些二極體中的最後一級二極體的陽極端耦接至第三節點。 In an embodiment of the present invention, the plurality of seventh intermediate voltage switches are a plurality of diodes, wherein the cathode ends of the first diodes of the plurality of diodes are coupled to a ground voltage, and the second The anode end of each of the pole bodies is coupled to the cathode end of the next-stage diode, and the anode end of the last-stage diode of the two diodes is coupled to the third node.
在本發明的一實施例中,上述的電源電壓為正電高壓,M個第一中壓開關、此些第二中壓開關、此至少一第四中壓開關以及此U個第六中壓開關為P型金氧半場效電晶體,且此L個第三 中壓開關、輸入中壓開關、此兩個第五中壓開關以及此些第七中壓開關為N型金氧半場效電晶體。 In an embodiment of the invention, the power supply voltage is a positive high voltage, M first medium voltage switches, the second medium voltage switches, the at least one fourth medium voltage switch, and the U sixth medium voltage The switch is a P-type gold oxide half field effect transistor, and this L third The medium voltage switch, the input medium voltage switch, the two fifth medium voltage switches, and the seventh medium voltage switch are N-type gold oxygen half field effect transistors.
在本發明的一實施例中,上述的電源電壓為負電高壓,此M個第一中壓開關、此些第二中壓開關、此至少一第四中壓開關以及此U個第六中壓開關為N型金氧半場效電晶體,且此L個第三中壓開關、輸入中壓開關、此兩個第五中壓開關以及此些第七中壓開關為P型金氧半場效電晶體。 In an embodiment of the invention, the power supply voltage is a negative power high voltage, the M first medium voltage switches, the second medium voltage switches, the at least one fourth medium voltage switch, and the U sixth medium voltage The switch is an N-type gold-oxygen half-field effect transistor, and the L third medium-voltage switch, the input medium-voltage switch, the two fifth medium-voltage switches, and the seventh medium-voltage switch are P-type gold-oxygen half-field power Crystal.
基於上述,在本發明實施例的高壓電源裝置中,其內部的中壓開關元件不會因高壓電源裝置操作在高壓的電源電壓下而發生崩潰。此外,藉由本發明實施例的高壓電源裝置的電路設計,可有效提昇高壓電源裝置可正常運作的電源電壓及其輸出電壓的範圍。 Based on the above, in the high-voltage power supply device of the embodiment of the invention, the internal medium-voltage switching element thereof does not collapse due to the high-voltage power supply device operating at a high-voltage power supply voltage. In addition, the circuit design of the high voltage power supply device according to the embodiment of the present invention can effectively improve the range of the power supply voltage and the output voltage of the high voltage power supply device that can operate normally.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the invention will be apparent from the following description.
100、200、300‧‧‧高壓電源裝置 100, 200, 300‧‧‧ high voltage power supply unit
111、211、311‧‧‧第一開關串聯組、輔助開關串聯組 111, 211, 311‧‧‧ first switch series group, auxiliary switch series group
112、212、213、312、313、314‧‧‧第一開關串聯組、偏壓開關串聯組 112, 212, 213, 312, 313, 314‧‧‧ first switch series group, bias switch series group
120、220、320‧‧‧第二開關串聯組 120, 220, 320‧‧‧Second switch series
130、232、233、332、333、334‧‧‧第一電流源 130, 232, 233, 332, 333, 334‧‧‧ first current source
140、240、340‧‧‧輔助元件 140, 240, 340‧‧‧ auxiliary components
222、322‧‧‧第二電流源 222, 322‧‧‧ second current source
250、350‧‧‧電流鏡電路 250, 350‧‧‧ current mirror circuit
251、351‧‧‧參考電路 251, 351‧‧‧ reference circuit
2513、3513‧‧‧第三開關串聯組 2513, 3513‧‧‧ third switch series
2514、3514‧‧‧第四開關串聯組 2514, 3514‧‧‧ fourth switch series
252、352、353‧‧‧映射電路 252, 352, 353‧‧‧ mapping circuits
2525、3535‧‧‧第五開關串聯組 2525, 3535‧‧‧ fifth switch series
359‧‧‧第四電流源 359‧‧‧fourth current source
391‧‧‧第六開關串聯組 391‧‧‧ sixth switch series
CRS‧‧‧控制信號 CRS‧‧‧ control signal
DM、DM1、DM2、DP‧‧‧二極體 DM, DM1, DM2, DP‧‧‧ diode
GND‧‧‧接地電壓 GND‧‧‧ Grounding voltage
I251‧‧‧第三電流源 I251‧‧‧ third current source
MN1‧‧‧輸入中壓開關 MN1‧‧‧Input medium voltage switch
MN2、MN3、MN4‧‧‧第三中壓開關 MN2, MN3, MN4‧‧‧ third medium voltage switch
MN5_1~MN5_11、MN7_1~MN7_17‧‧‧第七中壓開關 MN5_1~MN5_11, MN7_1~MN7_17‧‧‧ seventh medium voltage switch
MNC1、MNC2‧‧‧第五中壓開關 MNC1, MNC2‧‧‧ fifth medium voltage switch
MP11、MP12、MP13、MP14‧‧‧第一中壓開關 MP11, MP12, MP13, MP14‧‧‧ first medium voltage switch
MP1_1~MP1_6、MP2_1~MP2_6、MP3_1~MP3_11、MP4_1~MP4_16‧‧‧第二中壓開關 MP1_1~MP1_6, MP2_1~MP2_6, MP3_1~MP3_11, MP4_1~MP4_16‧‧‧Second medium voltage switch
MP5_1~MP5_5‧‧‧第四中壓開關 MP5_1~MP5_5‧‧‧fourth medium voltage switch
MPC6、MPC61、MPC7‧‧‧第六中壓開關 MPC6, MPC61, MPC7‧‧‧ sixth medium voltage switch
MP8_1~MP8_6‧‧‧第八中壓開關 MP8_1~MP8_6‧‧‧ eighth medium voltage switch
ND1‧‧‧第一節點 ND1‧‧‧ first node
ND2‧‧‧第二節點 ND2‧‧‧ second node
ND31、ND32‧‧‧第三節點 ND31, ND32‧‧‧ third node
ND4‧‧‧第四節點 ND4‧‧‧ fourth node
OT‧‧‧輸出端 OT‧‧‧ output
R1‧‧‧電阻 R1‧‧‧ resistance
VCP‧‧‧初始箝制電壓 VCP‧‧‧ initial clamping voltage
VG1、VG2、VG3、VG4‧‧‧第一偏壓電壓 VG1, VG2, VG3, VG4‧‧‧ first bias voltage
VG21、VG22‧‧‧第二偏壓電壓 VG21, VG22‧‧‧second bias voltage
VG41‧‧‧偏壓電壓 VG41‧‧‧ bias voltage
VHH‧‧‧電源電壓 VHH‧‧‧Power supply voltage
VP1、VP2、VP3‧‧‧電壓值 VP1, VP2, VP3‧‧‧ voltage values
VR‧‧‧參考電壓 VR‧‧‧reference voltage
VSP‧‧‧輸入偏壓電壓 VSP‧‧‧ input bias voltage
下面的所附圖式是本發明的說明書的一部分,繪示了本發明的示例實施例,所附圖式與說明書的描述一起說明本發明的原理。 The following drawings are a part of the specification of the invention, and illustrate the embodiments of the invention
圖1是依照本發明一實施例所繪示的高壓電源裝置的電路架構示意圖。 FIG. 1 is a schematic diagram of a circuit architecture of a high voltage power supply device according to an embodiment of the invention.
圖2是依照本發明另一實施例所繪示的高壓電源裝置的電路 架構示意圖。 2 is a circuit diagram of a high voltage power supply device according to another embodiment of the present invention. Schematic diagram of the architecture.
圖3是依照本發明又一實施例所繪示的高壓電源裝置的電路架構示意圖。 FIG. 3 is a schematic diagram of a circuit architecture of a high voltage power supply device according to still another embodiment of the present invention.
為了使本發明之內容可以被更容易明瞭,以下特舉實施例做為本發明確實能夠據以實施的範例。另外,凡可能之處,在圖式及實施方式中使用相同標號的元件/構件,係代表相同或類似部件。 In order to make the content of the present invention easier to understand, the following specific embodiments are examples of the invention that can be implemented. In addition, wherever possible, the same reference numerals in the FIGS.
以下請參照圖1,圖1是依照本發明一實施例所繪示的高壓電源裝置的電路架構示意圖。高壓電源裝置100可包括兩個第一中壓開關MP11及MP12、兩個第一開關串聯組111及112(以下稱為輔助開關串聯組111及偏壓開關串聯組112)、第二開關串聯組120以及一個第一電流源130,但不限於此。值得一提的是,本發明所配置的第一開關串聯組的數量等於第一中壓開關的數量。此外,第一電流源的數量L與第一中壓開關的數量M相關聯,其中L=M-1。第一中壓開關MP11與MP12依序串接,且串接在電源電壓VHH與高壓電源裝置100的輸出端OT之間。第一中壓開關MP11與MP12可分別受控於第一偏壓電壓VG1與VG2,以將電源電壓VHH傳輸至輸出端OT。 Referring to FIG. 1 , FIG. 1 is a schematic diagram of a circuit structure of a high voltage power supply device according to an embodiment of the invention. The high voltage power supply device 100 can include two first medium voltage switches MP11 and MP12, two first switch series groups 111 and 112 (hereinafter referred to as auxiliary switch series group 111 and bias switch series group 112), and a second switch series group. 120 and a first current source 130, but are not limited thereto. It is worth mentioning that the number of the first switch series groups configured by the present invention is equal to the number of the first medium voltage switches. Furthermore, the number L of first current sources is associated with the number M of first medium voltage switches, where L = M-1. The first medium voltage switch MP11 and the MP12 are serially connected in series, and are connected in series between the power supply voltage VHH and the output terminal OT of the high voltage power supply device 100. The first medium voltage switches MP11 and MP12 may be controlled by the first bias voltages VG1 and VG2, respectively, to transmit the power supply voltage VHH to the output terminal OT.
輔助開關串聯組111的第一端以及偏壓開關串聯組112的第一端耦接電源電壓VHH。輔助開關串聯組111的第二端可產 生第一偏壓電壓VG1,而偏壓開關串聯組112的第二端可產生第一偏壓電壓VG2。 The first end of the auxiliary switch series group 111 and the first end of the bias switch series group 112 are coupled to the power supply voltage VHH. The second end of the auxiliary switch series group 111 can be produced A first bias voltage VG1 is generated, and a second terminal of the bias switch series group 112 can generate a first bias voltage VG2.
第二開關串聯組120耦接在輔助開關串聯組111的第二端與接地電壓GND之間。第二開關串聯組120可用以限制流經輔助開關串聯組111的電流,且受控於控制信號CRS而啟閉,致使輔助開關串聯組111產生第一偏壓電壓VG1。 The second switch series group 120 is coupled between the second end of the auxiliary switch series group 111 and the ground voltage GND. The second switch series 120 can be used to limit the current flowing through the auxiliary switch series 111 and is controlled to be turned on and off by the control signal CRS, causing the auxiliary switch series 111 to generate the first bias voltage VG1.
第一電流源中130耦接在偏壓開關串聯組112的第二端與接地電壓GND之間,以提供偏壓開關串聯組112運作所需的第一偏壓電流。 The first current source 130 is coupled between the second end of the bias switch series group 112 and the ground voltage GND to provide a first bias current required for the bias switch series 112 to operate.
更進一步來說,輔助開關串聯組111可包括多個第二中壓開關MP1_1~MP1_6,其中第二中壓開關MP1_1~MP1_6依序串接,且串接在電源電壓VHH與輔助開關串聯組111的第二端之間。偏壓開關串聯組112可包括多個第二中壓開關MP2_1~MP2_6,其中第二中壓開關MP2_1~MP2_6依序串接,且串接在電源電壓VHH與偏壓開關串聯組112的第二端之間。 Furthermore, the auxiliary switch series group 111 may include a plurality of second medium voltage switches MP1_1~MP1_6, wherein the second medium voltage switches MP1_1~MP1_6 are serially connected in series, and are connected in series with the power supply voltage VHH and the auxiliary switch series group 111. Between the second ends. The bias switch series group 112 may include a plurality of second medium voltage switches MP2_1~MP2_6, wherein the second medium voltage switches MP2_1~MP2_6 are serially connected in series, and are serially connected in the power supply voltage VHH and the second of the bias switch series group 112. Between the ends.
在圖1所示的實施例中,輔助開關串聯組111的第二中壓開關MP1_1~MP1_6可為電晶體,但本發明並不以此為限。其中第一級電晶體(即第二中壓開關MP1_1)的源極端耦接電源電壓VHH。第一級電晶體(即第二中壓開關MP1_1)的閘極端與汲極端相耦接,並耦接至下一級電晶體(即第二中壓開關MP1_2)的源極端。其餘之電晶體的耦接方式可依此類推。而最後一級電晶體(即第二中壓開關MP1_6)的閘極端與汲極端相耦接,並耦接至輔助開 關串聯組111的第二端。類似地,偏壓開關串聯組112的第二中壓開關MP2_1~MP2_6可為電晶體,其耦接方式可參照上述第二中壓開關MP1_1~MP1_6為電晶體的耦接方式而類推得之,故在此不再贅述。值得一提的是,在圖1所示的第二中壓開關MP1_1~MP1_6及MP2_1~MP2_6中,各電晶體的基體耦接至其本身的源極端,但本發明並不限於此。在本發明的另一實施例中,為了節省電路面積,輔助開關串聯組111及偏壓開關串聯組112中的第二中壓開關MP1_1~MP1_6及MP2_1~MP2_6可以共用一基體,特別是,可以共用的第二中壓開關數量可以是至少兩顆,而至多數量則可由第二中壓開關的崩潰電壓(breakdown voltage)與臨界電壓(threshold voltage)來決定,亦即崩潰電壓除以臨界電壓(倘若無法整除,則可對商數採無條件進位以取得上述至多數量)。舉例來說,倘若第二中壓開關的崩潰電壓為6伏特,且臨界電壓為1伏特,則最多是6顆第二中壓開關可共用一基體,故,第二中壓開關MP1_1~MP1_6可以共用一基體,且共用的基體耦接至第二中壓開關MP1_1~MP1_6中的最高電壓(即第二中壓開關MP1_1的源極端,亦即電源電壓VHH)。類似地,第二中壓開關MP2_1~MP2_6可以共用一基體,且共用的基體耦接至第二中壓開關MP2_1~MP2_6中的最高電壓(即第二中壓開關MP2_1的源極端,亦即電源電壓VHH)。需說明的是,上述範例中的第二中壓開關的崩潰電壓為6伏特,且臨界電壓為1伏特僅為例示說明,並非用以限制本發明。 In the embodiment shown in FIG. 1 , the second medium voltage switches MP1_1 MP MP1_6 of the auxiliary switch series group 111 can be a transistor, but the invention is not limited thereto. The source terminal of the first-stage transistor (ie, the second medium-voltage switch MP1_1) is coupled to the power supply voltage VHH. The gate terminal of the first stage transistor (ie, the second medium voltage switch MP1_1) is coupled to the 汲 terminal and coupled to the source terminal of the next stage transistor (ie, the second medium voltage switch MP1_2). The coupling of the remaining transistors can be deduced by analogy. The gate terminal of the last stage transistor (ie, the second medium voltage switch MP1_6) is coupled to the 汲 terminal and coupled to the auxiliary opening. The second end of the series group 111 is closed. Similarly, the second intermediate voltage switches MP2_1~MP2_6 of the bias switch series group 112 can be a transistor, and the coupling manner can be similarly obtained by referring to the coupling manner of the second medium voltage switch MP1_1~MP1_6 for the transistor. Therefore, it will not be repeated here. It is worth mentioning that, in the second medium voltage switches MP1_1~MP1_6 and MP2_1~MP2_6 shown in FIG. 1, the base of each transistor is coupled to its own source terminal, but the invention is not limited thereto. In another embodiment of the present invention, in order to save circuit area, the auxiliary switch series group 111 and the second medium voltage switches MP1_1~MP1_6 and MP2_1~MP2_6 of the bias switch series group 112 may share a base body, in particular, The number of the shared second medium voltage switches may be at least two, and the maximum number may be determined by the breakdown voltage and the threshold voltage of the second medium voltage switch, that is, the breakdown voltage is divided by the threshold voltage ( If it is not possible to divisible, the unconditional carry can be taken for the quotient to obtain the above-mentioned maximum number). For example, if the breakdown voltage of the second medium voltage switch is 6 volts and the threshold voltage is 1 volt, then at most 6 second medium voltage switches can share a base body, so the second medium voltage switch MP1_1~MP1_6 can A base body is shared, and the shared base body is coupled to the highest voltage of the second medium voltage switches MP1_1 MP MP1_6 (ie, the source terminal of the second medium voltage switch MP1_1, that is, the power supply voltage VHH). Similarly, the second medium voltage switches MP2_1~MP2_6 can share a base body, and the common base body is coupled to the highest voltage of the second medium voltage switches MP2_1~MP2_6 (ie, the source terminal of the second medium voltage switch MP2_1, that is, the power source). Voltage VHH). It should be noted that the breakdown voltage of the second medium voltage switch in the above example is 6 volts, and the threshold voltage is 1 volt, which is merely illustrative and is not intended to limit the present invention.
在本發明的其他實施例中,輔助開關串聯組111的第二中壓開關MP1_1~MP1_6可改採二極體來實現,但本發明並不以此為限。其中第一級二極體(即第二中壓開關MP1_1)的陽極端耦接電源電壓VHH。第一級二極體(即第二中壓開關MP1_1)的陰極端耦接至下一級二極體(即第二中壓開關MP1_2)的陽極端。其餘之二極體的耦接方式可依此類推。而最後一級二極體(即第二中壓開關MP1_6)的陰極端可耦接至輔助開關串聯組111的第二端。類似地,偏壓開關串聯組112的第二中壓開關MP2_1~MP2_6可改採二極體來實現,其耦接方式可參照上述第二中壓開關MP1_1~MP1_6為二極體的耦接方式而類推得之,故在此不再贅述。 In other embodiments of the present invention, the second medium voltage switches MP1_1~MP1_6 of the auxiliary switch series group 111 can be implemented by using a diode, but the invention is not limited thereto. The anode end of the first-stage diode (ie, the second medium-voltage switch MP1_1) is coupled to the power supply voltage VHH. The cathode end of the first-stage diode (ie, the second medium-voltage switch MP1_1) is coupled to the anode terminal of the next-stage diode (ie, the second medium-voltage switch MP1_2). The coupling of the remaining diodes can be deduced by analogy. The cathode end of the last diode (ie, the second medium voltage switch MP1_6) may be coupled to the second end of the auxiliary switch series group 111. Similarly, the second medium voltage switches MP2_1~MP2_6 of the bias switch series group 112 can be implemented by using a diode. The coupling mode can refer to the second medium voltage switch MP1_1~MP1_6 as a coupling mode of the diode. And analogy, so I won't go into details here.
在圖1所示的實施例中,第一中壓開關MP11及MP12可為電晶體。第一級電晶體(即第一中壓開關MP11)的源極端耦接電源電壓VHH。第一級電晶體(即第一中壓開關MP11)的汲極端耦接至最後一級電晶體(即第一中壓開關MP12)的源極端。最後一級電晶體(即第一中壓開關MP12)的汲極端耦接至輸出端OT。第一級電晶體(即第一中壓開關MP11)的閘極端耦接至輔助開關串聯組111的第二端以接收第一偏壓電壓VG1,而最後一級電晶體(即第一中壓開關MP12)的閘極端耦接至偏壓開關串聯組112的第二端以接收第一偏壓電壓VG2。 In the embodiment shown in FIG. 1, the first medium voltage switches MP11 and MP12 may be transistors. The source terminal of the first stage transistor (ie, the first medium voltage switch MP11) is coupled to the power supply voltage VHH. The 汲 terminal of the first stage transistor (ie, the first medium voltage switch MP11) is coupled to the source terminal of the last stage transistor (ie, the first medium voltage switch MP12). The 汲 terminal of the last stage transistor (ie, the first medium voltage switch MP12) is coupled to the output terminal OT. The gate terminal of the first stage transistor (ie, the first medium voltage switch MP11) is coupled to the second end of the auxiliary switch series group 111 to receive the first bias voltage VG1, and the last stage transistor (ie, the first medium voltage switch) The gate terminal of MP12) is coupled to the second terminal of the bias switch series group 112 to receive the first bias voltage VG2.
在圖1所示的實施例中,高壓電源裝置100更可包括輔助元件140。輔助元件140耦接在第一級電晶體(即第一中壓開關MP11)的源極端與閘極端之間,以輔助控制第一級電晶體(即第一 中壓開關MP11)的啟閉運作。在本發明的一實施例中,輔助元件140可為電阻,但本發明不限於此。在本發明的其他實施例中,輔助元件140可為電流源或是任何可輔助控制第一級電晶體(即第一中壓開關MP11)的啟閉運作的元件。 In the embodiment shown in FIG. 1, the high voltage power supply unit 100 may further include an auxiliary component 140. The auxiliary component 140 is coupled between the source terminal and the gate terminal of the first-stage transistor (ie, the first medium-voltage switch MP11) to assist in controlling the first-stage transistor (ie, the first The opening and closing operation of the medium voltage switch MP11). In an embodiment of the invention, the auxiliary component 140 may be a resistor, but the invention is not limited thereto. In other embodiments of the invention, the auxiliary component 140 can be a current source or any component that can assist in controlling the opening and closing operation of the first stage transistor (ie, the first medium voltage switch MP11).
在圖1所示的實施例中,第二開關串聯組120可包括電阻R1以及輸入中壓開關MN1。電阻R1的第一端耦接至輔助開關串聯組111的第二端。輸入中壓開關MN1耦接在電阻R1的第二端與接地電壓GND之間,且受控於控制信號CRS而啟閉。 In the embodiment shown in FIG. 1, the second switch series set 120 can include a resistor R1 and an input medium voltage switch MN1. The first end of the resistor R1 is coupled to the second end of the auxiliary switch series group 111. The input medium voltage switch MN1 is coupled between the second end of the resistor R1 and the ground voltage GND, and is controlled to open and close by the control signal CRS.
在圖1所示的實施例中,電源電壓VHH可為正電高壓,而第一中壓開關MP11與MP12以及第二中壓開關MP1_1~MP1_6與MP2_1~MP2_6可為P型金氧半場效電晶體,且輸入中壓開關MN1可為N型金氧半場效電晶體。如此一來,高壓電源裝置100可基於控制信號CRS而提供正電的輸出電壓至輸出端OT。但本發明並不以此為限。 In the embodiment shown in FIG. 1, the power supply voltage VHH can be a positive high voltage, and the first medium voltage switches MP11 and MP12 and the second medium voltage switches MP1_1~MP1_6 and MP2_1~MP2_6 can be P-type gold-oxygen half-field power. The crystal, and the input medium voltage switch MN1 can be an N-type gold oxide half field effect transistor. As such, the high voltage power supply device 100 can provide a positive output voltage to the output terminal OT based on the control signal CRS. However, the invention is not limited thereto.
在本發明的其他實施例中,圖1的電源電壓VHH可為負電高壓,而第一中壓開關MP11與MP12以及第二中壓開關MP1_1~MP1_6與MP2_1~MP2_6可變更為N型金氧半場效電晶體,且輸入中壓開關MN1可變更為P型金氧半場效電晶體。如此一來,圖1的高壓電源裝置100即可基於控制信號CRS而提供負電的輸出電壓至輸出端OT。 In other embodiments of the present invention, the power supply voltage VHH of FIG. 1 may be a negative power high voltage, and the first medium voltage switches MP11 and MP12 and the second medium voltage switches MP1_1 MP1_6 and MP2_1~MP2_6 may be more N-type gold oxygen half fields. The utility model has an input transistor, and the input medium voltage switch MN1 can be changed to a P-type gold-oxygen half field effect transistor. In this way, the high voltage power supply device 100 of FIG. 1 can provide a negative output voltage to the output terminal OT based on the control signal CRS.
值得一提的是,為了避免第一中壓開關MP11與MP12以及輸入中壓開關MN1因電源電壓VHH的高壓而發生崩潰,輔 助開關串聯組111中的第二中壓開關MP1_1~MP1_6的數量以及偏壓開關串聯組112中的第二中壓開關MP2_1~MP2_6的數量必須精心設計。 It is worth mentioning that in order to avoid the collapse of the first medium voltage switch MP11 and MP12 and the input medium voltage switch MN1 due to the high voltage of the power supply voltage VHH, The number of second medium voltage switches MP1_1~MP1_6 in the helper switch series group 111 and the number of second medium voltage switches MP2_1~MP2_6 in the bias switch series group 112 must be carefully designed.
舉例來說,以下假設圖1的P型金氧半場效電晶體(即第一中壓開關MP11與MP12以及第二中壓開關MP1_1~MP1_6與MP2_1~MP2_6)的崩潰電壓(breakdown voltage,下稱Vbd)為6伏特,且導通的臨界電壓(threshold voltage,下稱Vtp)為-1伏特,電源電壓VHH的最大值(下稱VHHmax)可設定在11伏特,而電源電壓VHH的最小值(下稱VHHmin)可設定在1伏特。另外,在電源電壓VHH為11伏特的情況下,為了避免第一中壓開關MP11的源極端與汲極端之間發生崩潰,第一中壓開關MP12的源極端的電壓值VP1可設定在6伏特(最小值)。於上述情境下,第二中壓開關MP1_1~MP1_6的數量,將由崩潰電壓Vbd及臨界電壓Vtp決定,例如下列式(1)所示,其中S1為第二中壓開關MP1_1~MP1_6的數量,此數量為6。而第二中壓開關MP2_1~MP2_6的數量,將由電源電壓VHH的最大值VHHmax、第一中壓開關MP12的源極端的電壓值VP1以及臨界電壓Vtp決定,例如下列式(2)所示,其中S2為第二中壓開關MP2_1~MP2_6的數量,此數量為6。附帶一提的是,倘若根據式(1)及式(2)的計算結果具有小數,則可對該計算結果採無條件進位以取得該數量。 For example, the following assumes the breakdown voltage of the P-type MOS field-effect transistor of FIG. 1 (ie, the first medium voltage switch MP11 and MP12 and the second medium voltage switch MP1_1~MP1_6 and MP2_1~MP2_6). Vbd) is 6 volts, and the threshold voltage (hereinafter referred to as Vtp) is -1 volt. The maximum value of the power supply voltage VHH (hereinafter referred to as VHHmax) can be set at 11 volts, and the minimum value of the power supply voltage VHH (below) Said VHHmin) can be set at 1 volt. In addition, in the case where the power supply voltage VHH is 11 volts, in order to avoid a collapse between the source terminal and the 汲 terminal of the first medium voltage switch MP11, the voltage value VP1 of the source terminal of the first medium voltage switch MP12 can be set at 6 volts. (minimum). In the above situation, the number of the second medium voltage switches MP1_1~MP1_6 will be determined by the breakdown voltage Vbd and the threshold voltage Vtp, for example, as shown in the following formula (1), wherein S1 is the number of the second medium voltage switches MP1_1~MP1_6, The number is 6. The number of the second medium voltage switches MP2_1~MP2_6 is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP1 of the source terminal of the first medium voltage switch MP12, and the threshold voltage Vtp, for example, as shown in the following formula (2), wherein S2 is the number of the second medium voltage switches MP2_1~MP2_6, and the number is 6. Incidentally, if the calculation result according to the formulas (1) and (2) has a decimal number, the calculation result may be unconditionally carried to obtain the quantity.
S1=Vbd÷|Vtp| 式(1) S 1= Vbd ÷| Vtp | (1)
S2=(VHH max-VP1-Vtp)÷|Vtp| 式(2) S 2=( VHH max- VP 1- Vtp )÷| Vtp | (2)
於上述情境下,當電源電壓VHH為11伏特,高壓電源裝置100的輸出端OT所接的負載(未繪示)為輕載且輸入中壓開關MN1基於控制信號CRS而被導通時,第一偏壓電壓VG1及VG2皆為5伏特(即VHH-6×|Vtp|),致使第一中壓開關MP11及MP12分別被導通。由於負載為輕載,故第一中壓開關MP12的源極端的電壓為11伏特,且輸出端的電壓也是11伏特。如此一來,第一中壓開關MP11的源極端與閘極端的跨壓為6伏特,第一中壓開關MP11的源極端與汲極端的跨壓為0伏特,且第一中壓開關MP11的閘極端與汲極端的跨壓為6伏特,皆未超過第一中壓開關MP11的崩潰電壓Vbd(為6伏特),故第一中壓開關MP11不會發生崩潰。另外,第一中壓開關MP12的源極端與閘極端的跨壓為6伏特,第一中壓開關MP12的源極端與汲極端的跨壓為0伏特,且第一中壓開關MP12的閘極端與汲極端的跨壓為6伏特,皆未超過第一中壓開關MP12的崩潰電壓Vbd(為6伏特),故第一中壓開關MP12亦不會發生崩潰。在負載為輕載且電源電壓VHH於11伏特的高壓情況下,第一中壓開關MP11及MP12皆不會發生崩潰,因此高壓電源裝置100可正常運作。 In the above scenario, when the power supply voltage VHH is 11 volts, the load (not shown) connected to the output terminal OT of the high voltage power supply device 100 is lightly loaded and the input medium voltage switch MN1 is turned on based on the control signal CRS, first The bias voltages VG1 and VG2 are both 5 volts (ie, VHH -6 × | Vtp |), causing the first medium voltage switches MP11 and MP12 to be turned on, respectively. Since the load is lightly loaded, the voltage at the source terminal of the first medium voltage switch MP12 is 11 volts, and the voltage at the output terminal is also 11 volts. In this way, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP11 is 6 volts, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP11 is 0 volt, and the first medium voltage switch MP11 The gate voltage of the gate terminal and the 汲 terminal is 6 volts, and the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP11 is not exceeded, so that the first medium voltage switch MP11 does not collapse. In addition, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP12 is 6 volts, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP12 is 0 volt, and the gate terminal of the first medium voltage switch MP12 The crossover voltage with the 汲 extreme is 6 volts, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP12, so the first medium voltage switch MP12 does not collapse. When the load is lightly loaded and the power supply voltage VHH is at a high voltage of 11 volts, the first medium voltage switches MP11 and MP12 do not collapse, and thus the high voltage power supply device 100 can operate normally.
另一情況是,當電源電壓VHH為11伏特,高壓電源裝置100的輸出端OT所接的負載(未繪示)為重載且輸入中壓開關MN1基於控制信號CRS而被導通時,第一偏壓電壓VG1及VG2皆為5伏特(即VHH-6×|Vp|),致使第一中壓開關MP11及MP12分別被導通。由於負載為重載,故第一中壓開關MP12的源極端的 電壓會被下拉至6伏特,且輸出端的電壓被下拉至約為0伏特。如此一來,第一中壓開關MP11的源極端與閘極端的跨壓為6伏特,第一中壓開關MP11的源極端與汲極端的跨壓為5伏特,且第一中壓開關MP11的閘極端與汲極端的跨壓為1伏特,皆未超過第一中壓開關MP11的崩潰電壓Vbd(為6伏特),故第一中壓開關MP11不會發生崩潰。另外,第一中壓開關MP12的源極端與閘極端的跨壓為1伏特,第一中壓開關MP12的源極端與汲極端的跨壓為6伏特,且第一中壓開關MP12的閘極端與汲極端的跨壓為5伏特,皆未超過第一中壓開關MP12的崩潰電壓Vbd(為6伏特),故第一中壓開關MP12亦不會發生崩潰。在負載為重載且電源電壓VHH於11伏特的高壓情況下,第一中壓開關MP11及MP12皆不會發生崩潰,因此高壓電源裝置100可正常運作。 In another case, when the power supply voltage VHH is 11 volts, the load (not shown) connected to the output terminal OT of the high voltage power supply device 100 is a heavy load and the input medium voltage switch MN1 is turned on based on the control signal CRS, first The bias voltages VG1 and VG2 are both 5 volts (ie, VHH -6 × | Vp |), causing the first medium voltage switches MP11 and MP12 to be turned on, respectively. Since the load is heavy, the voltage at the source terminal of the first medium voltage switch MP12 is pulled down to 6 volts, and the voltage at the output is pulled down to about 0 volts. In this way, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP11 is 6 volts, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP11 is 5 volts, and the first medium voltage switch MP11 The crossover voltage of the gate extreme and the 汲 extreme is 1 volt, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP11, so the first medium voltage switch MP11 does not collapse. In addition, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP12 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP12 is 6 volts, and the gate terminal of the first medium voltage switch MP12 The crossover voltage with the 汲 extreme is 5 volts, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP12, so the first medium voltage switch MP12 does not collapse. When the load is heavy and the power supply voltage VHH is at a high voltage of 11 volts, the first medium voltage switches MP11 and MP12 do not collapse, and thus the high voltage power supply device 100 can operate normally.
又一情況是,當電源電壓VHH為1伏特,高壓電源裝置100的輸出端OT所接的負載(未繪示)為輕載且輸入中壓開關MN1基於控制信號CRS而被導通時,第一偏壓電壓VG1因為輸入中壓開關MN1為導通狀態而被下拉到接地電壓GND的電位(即0伏特),而第一偏壓電壓VG2因為第一電流源130耦接到接地電壓GND而為0伏特,致使第一中壓開關MP11及MP12可分別被導通。由於負載為輕載,故第一中壓開關MP12的源極端的電壓為1伏特,且輸出端的電壓也是1伏特。如此一來,第一中壓開關MP11的源極端與閘極端的跨壓為1伏特,第一中壓開關MP11的源極端與汲極端的跨壓為0伏特,且第一中壓開關MP11的閘 極端與汲極端的跨壓為1伏特,皆未超過第一中壓開關MP11的崩潰電壓Vbd(為6伏特),故第一中壓開關MP11不會發生崩潰。另外,第一中壓開關MP12的源極端與閘極端的跨壓為1伏特,第一中壓開關MP12的源極端與汲極端的跨壓為0伏特,且第一中壓開關MP12的閘極端與汲極端的跨壓為1伏特,皆未超過第一中壓開關MP12的崩潰電壓Vbd(為6伏特),故第一中壓開關MP12亦不會發生崩潰。在負載為輕載且電源電壓VHH低至1伏特的情況下,第一中壓開關MP11及MP12仍可分別被導通,因此高壓電源裝置100在低壓的情況下仍可正常運作。 In another case, when the power supply voltage VHH is 1 volt, the load (not shown) connected to the output terminal OT of the high voltage power supply device 100 is lightly loaded and the input medium voltage switch MN1 is turned on based on the control signal CRS, first The bias voltage VG1 is pulled down to the potential of the ground voltage GND (ie, 0 volts) because the input medium voltage switch MN1 is in an on state, and the first bias voltage VG2 is 0 because the first current source 130 is coupled to the ground voltage GND. Volts, so that the first medium voltage switches MP11 and MP12 can be turned on, respectively. Since the load is lightly loaded, the voltage at the source terminal of the first medium voltage switch MP12 is 1 volt, and the voltage at the output terminal is also 1 volt. In this way, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP11 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP11 is 0 volt, and the first medium voltage switch MP11 brake The extreme voltage between the extreme and the extreme is 1 volt, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP11, so the first medium voltage switch MP11 does not collapse. In addition, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP12 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP12 is 0 volt, and the gate terminal of the first medium voltage switch MP12 The crossover voltage with the 汲 extreme is 1 volt, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP12, so the first medium voltage switch MP12 does not collapse. In the case where the load is lightly loaded and the power supply voltage VHH is as low as 1 volt, the first medium voltage switches MP11 and MP12 can still be turned on, respectively, so that the high voltage power supply device 100 can still operate normally under low voltage conditions.
又一情況是,當電源電壓VHH為1伏特,高壓電源裝置100的輸出端OT所接的負載(未繪示)為重載且輸入中壓開關MN1基於控制信號CRS而被導通時,第一偏壓電壓VG1因為輸入中壓開關MN1為導通狀態而被下拉到接地電壓GND的電位(即0伏特),而第一偏壓電壓VG2因為第一電流源130耦接到接地電壓GND而為0伏特,致使第一中壓開關MP11及MP12可分別被導通,而第一中壓開關MP12的源極端的電壓會被箝位在1伏特。由於負載為重載,故輸出端的電壓被下拉至約為0伏特。如此一來,第一中壓開關MP11的源極端與閘極端的跨壓為1伏特,第一中壓開關MP11的源極端與汲極端的跨壓為0伏特,且第一中壓開關MP11的閘極端與汲極端的跨壓為1伏特,皆未超過第一中壓開關MP11的崩潰電壓Vbd(為6伏特),故第一中壓開關MP11不會發生崩潰。另外,第一中壓開關MP12的源極端與閘極 端的跨壓為1伏特,第一中壓開關MP12的源極端與汲極端的跨壓為1伏特,且第一中壓開關MP12的閘極端與汲極端的跨壓為0伏特,皆未超過第一中壓開關MP12的崩潰電壓Vbd(為6伏特),故第一中壓開關MP12亦不會發生崩潰。在在負載為重載且電源電壓VHH低至1伏特的情況下,第一中壓開關MP11及MP12仍可分別被導通,因此高壓電源裝置100在低壓的情況下仍可正常運作。 In another case, when the power supply voltage VHH is 1 volt, the load (not shown) connected to the output terminal OT of the high voltage power supply device 100 is a heavy load and the input medium voltage switch MN1 is turned on based on the control signal CRS, first The bias voltage VG1 is pulled down to the potential of the ground voltage GND (ie, 0 volts) because the input medium voltage switch MN1 is in an on state, and the first bias voltage VG2 is 0 because the first current source 130 is coupled to the ground voltage GND. Volts cause the first medium voltage switches MP11 and MP12 to be turned on, respectively, and the voltage at the source terminal of the first medium voltage switch MP12 is clamped at 1 volt. Since the load is heavily loaded, the voltage at the output is pulled down to approximately 0 volts. In this way, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP11 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP11 is 0 volt, and the first medium voltage switch MP11 The crossover voltage of the gate extreme and the 汲 extreme is 1 volt, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP11, so the first medium voltage switch MP11 does not collapse. In addition, the source terminal and the gate of the first medium voltage switch MP12 The voltage across the terminal is 1 volt, the voltage between the source terminal and the 汲 terminal of the first medium voltage switch MP12 is 1 volt, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP12 is 0 volt, which does not exceed the first The breakdown voltage Vbd (6 volts) of a medium voltage switch MP12 does not cause the first medium voltage switch MP12 to collapse. In the case where the load is heavy and the power supply voltage VHH is as low as 1 volt, the first medium voltage switches MP11 and MP12 can still be turned on, respectively, so that the high voltage power supply device 100 can still operate normally under low voltage conditions.
總的來說,無論負載為輕載或是重載,只要電源電壓VHH是在1伏特至11伏特的電壓範圍內,高壓電源裝置100皆可正常運作。因此高壓電源裝置100可正常運作的電源電壓VHH的範圍以及其輸出電壓的範圍確實可被有效提昇。 In general, the high voltage power supply unit 100 can operate normally as long as the load is light or heavy, as long as the power supply voltage VHH is in the range of 1 volt to 11 volts. Therefore, the range of the power supply voltage VHH in which the high-voltage power supply device 100 can operate normally and the range of its output voltage can be effectively improved.
以下請參照圖2,圖2是依照本發明另一實施例所繪示的高壓電源裝置的電路架構示意圖。高壓電源裝置200可包括三個第一中壓開關MP11、MP12與MP13、三個第一開關串聯組211、212、213(以下稱為:輔助開關串聯組211、偏壓開關串聯組212、偏壓開關串聯組213)、第二開關串聯組220、兩個第一電流源232、233、輔助元件240、二極體DM以及電流鏡電路250,但不限於此。值得一提的是,本發明所配置的第一開關串聯組的數量等於第一中壓開關的數量。此外,第一電流源的數量L以及二極體的數量W皆與第一中壓開關的數量M相關聯,其中L=M-1,W=M-2。第一中壓開關MP11、MP12與MP13依序串接,且串接在電源電壓VHH與高壓電源裝置200的輸出端OT之間。第一中壓開 關MP11、MP12、MP13可分別受控於第一偏壓電壓VG1、VG2及VG3,以將電源電壓VHH傳輸至輸出端OT。 Referring to FIG. 2, FIG. 2 is a schematic diagram of a circuit structure of a high voltage power supply device according to another embodiment of the present invention. The high voltage power supply device 200 may include three first medium voltage switches MP11, MP12 and MP13, three first switch series groups 211, 212, 213 (hereinafter referred to as: auxiliary switch series group 211, bias switch series group 212, partial bias) The pressure switch series group 213), the second switch series group 220, the two first current sources 232, 233, the auxiliary element 240, the diode DM, and the current mirror circuit 250 are not limited thereto. It is worth mentioning that the number of the first switch series groups configured by the present invention is equal to the number of the first medium voltage switches. Furthermore, the number L of the first current source and the number W of the diodes are all associated with the number M of the first medium voltage switches, where L=M-1, W=M-2. The first medium voltage switches MP11, MP12 and MP13 are serially connected in series, and are connected in series between the power supply voltage VHH and the output terminal OT of the high voltage power supply device 200. First medium pressure open The off MP11, MP12, MP13 can be controlled by the first bias voltages VG1, VG2, and VG3, respectively, to transmit the power supply voltage VHH to the output terminal OT.
輔助開關串聯組211的第一端以及偏壓開關串聯組212、213的第一端耦接電源電壓VHH。輔助開關串聯組211的第二端產生第一偏壓電壓VG1,而偏壓開關串聯組212、213的第二端分別產生第一偏壓電壓VG2、VG3。 The first end of the auxiliary switch series group 211 and the first end of the bias switch series group 212, 213 are coupled to the power supply voltage VHH. The second terminal of the auxiliary switch series group 211 generates a first bias voltage VG1, and the second ends of the bias switch series groups 212, 213 respectively generate first bias voltages VG2, VG3.
第二開關串聯組220耦接在輔助開關串聯組211的第二端與接地電壓GND之間。第二開關串聯組220用以限制流經輔助開關串聯組211的電流,且受控於控制信號CRS而啟閉,致使輔助開關串聯組211產生第一偏壓電壓VG1。 The second switch series group 220 is coupled between the second end of the auxiliary switch series group 211 and the ground voltage GND. The second switch series group 220 is used to limit the current flowing through the auxiliary switch series group 211, and is controlled to be turned on and off by the control signal CRS, so that the auxiliary switch series group 211 generates the first bias voltage VG1.
第一電流源232、233分別耦接在偏壓開關串聯組212、213的第二端與接地電壓GND之間,以分別提供偏壓開關串聯組212、213運作所需的第一偏壓電流。 The first current sources 232 and 233 are respectively coupled between the second ends of the bias switch series groups 212 and 213 and the ground voltage GND to respectively provide the first bias currents required for the operation of the bias switch series groups 212 and 213 respectively. .
輔助開關串聯組211的內部架構及實施方式類似於圖1的輔助開關串聯組111,故可參酌上述的相關說明,在此不再贅述。另外,偏壓開關串聯組212的內部架構及實施方式類似於圖1的偏壓開關串聯組112,故可參酌上述的相關說明,在此不再贅述。以下僅針對偏壓開關串聯組213進行說明。 The internal structure and implementation of the auxiliary switch series group 211 are similar to the auxiliary switch series group 111 of FIG. 1 , so the above related description may be referred to, and details are not described herein again. In addition, the internal architecture and implementation of the bias switch series 212 are similar to the bias switch series 112 of FIG. 1 , so the above related description may be referred to, and details are not described herein again. Hereinafter, only the bias switch series group 213 will be described.
偏壓開關串聯組213可包括多個第二中壓開關MP3_1~MP3_11,其中第二中壓開關MP3_1~MP3_11依序串接,且串接在電源電壓VHH與偏壓開關串聯組213的第二端之間。在圖2所示的實施例中,偏壓開關串聯組213的第二中壓開關 MP3_1~MP3_11可為電晶體,但本發明並不以此為限。其中第一級電晶體(即第二中壓開關MP3_1)的源極端耦接電源電壓VHH。第一級電晶體(即第二中壓開關MP3_1)的閘極端與汲極端相耦接,並耦接至下一級電晶體(即第二中壓開關MP3_2)的源極端。其餘之電晶體的耦接方式可依此類推。而最後一級電晶體(即第二中壓開關MP3_11)的閘極端與汲極端相耦接,並耦接至偏壓開關串聯組213的第二端。 The bias switch series group 213 may include a plurality of second medium voltage switches MP3_1~MP3_11, wherein the second medium voltage switches MP3_1~MP3_11 are serially connected in series, and are serially connected in the power supply voltage VHH and the second of the bias switch series group 213 Between the ends. In the embodiment shown in FIG. 2, the second medium voltage switch of the bias switch series group 213 MP3_1~MP3_11 may be a transistor, but the invention is not limited thereto. The source terminal of the first-stage transistor (ie, the second medium-voltage switch MP3_1) is coupled to the power supply voltage VHH. The gate terminal of the first stage transistor (ie, the second medium voltage switch MP3_1) is coupled to the 汲 terminal and coupled to the source terminal of the next stage transistor (ie, the second medium voltage switch MP3_2). The coupling of the remaining transistors can be deduced by analogy. The gate terminal of the last stage transistor (ie, the second medium voltage switch MP3_11) is coupled to the 汲 terminal and coupled to the second end of the bias switch series group 213.
值得一提的是,在圖2所示的第二中壓開關MP3_1~MP3_11中,各電晶體的基體可耦接至其本身的源極端,但本發明並不限於此。在本發明的另一實施例中,為了節省電路面積,偏壓開關串聯組213中的第二中壓開關MP3_1~MP3_11可以共用一基體,特別是,可以共用的第二中壓開關數量可以是至少兩顆,而至多數量則可由第二中壓開關的崩潰電壓與臨界電壓決定,亦即崩潰電壓除以臨界電壓(倘若無法整除,則可對商數採無條件進位以取得上述至多數量)。舉例來說,倘若第二中壓開關的崩潰電壓為6伏特,且臨界電壓為1伏特,則最多是6顆第二中壓開關可共用一基體,故,第二中壓開關MP3_1~MP3_6可以共用一基體,且共用的基體耦接至第二中壓開關MP3_1~MP3_6中的最高電壓(即第二中壓開關MP3_1的源極端,亦即電源電壓VHH)。類似地,第二中壓開關MP3_7~MP3_11可以共用一基體,且共用的基體耦接至第二中壓開關MP3_7~MP3_11中的最高電壓(即第二中壓開關MP3_7的源極端)。上述範例中的第二中壓開關 的崩潰電壓為6伏特,且臨界電壓為1伏特僅為例示說明,並非用以限制本發明。 It is worth mentioning that in the second medium voltage switches MP3_1~MP3_11 shown in FIG. 2, the base of each transistor can be coupled to its own source terminal, but the invention is not limited thereto. In another embodiment of the present invention, in order to save circuit area, the second medium voltage switches MP3_1~MP3_11 of the bias switch series group 213 can share a base body. In particular, the number of second medium voltage switches that can be shared can be At least two, and at most the number can be determined by the breakdown voltage and the threshold voltage of the second medium voltage switch, that is, the breakdown voltage is divided by the threshold voltage (if it is impossible to divisible, the quotient can be unconditionally carried to obtain the above-mentioned maximum number). For example, if the breakdown voltage of the second medium voltage switch is 6 volts and the threshold voltage is 1 volt, then at most 6 second medium voltage switches can share a base body, so the second medium voltage switch MP3_1~MP3_6 can A base body is shared, and the shared base body is coupled to the highest voltage of the second medium voltage switches MP3_1 MP MP3_6 (ie, the source terminal of the second medium voltage switch MP3_1, that is, the power supply voltage VHH). Similarly, the second medium voltage switches MP3_7~MP3_11 can share a base body, and the common base body is coupled to the highest voltage of the second medium voltage switches MP3_7~MP3_11 (ie, the source terminal of the second medium voltage switch MP3_7). The second medium voltage switch in the above example The breakdown voltage is 6 volts and the threshold voltage of 1 volt is merely illustrative and is not intended to limit the invention.
在本發明的其他實施例中,偏壓開關串聯組213的第二中壓開關MP3_1~MP3_11可改採二極體來實現,其耦接方式可參照上述圖1的第二中壓開關MP1_1~MP1_6為二極體的耦接方式而類推得之,故在此不再贅述。 In other embodiments of the present invention, the second medium voltage switches MP3_1~MP3_11 of the bias switch series group 213 can be implemented by using a diode. For the coupling manner, refer to the second medium voltage switch MP1_1~ of FIG. MP1_6 is analogous to the coupling mode of the diodes, so it will not be described here.
在圖2所示的實施例中,第一中壓開關MP11、MP12及MP13可為電晶體,但本發明並不以此為限。第一級電晶體(即第一中壓開關MP11)的源極端耦接電源電壓VHH。第一級電晶體(即第一中壓開關MP11)的汲極端耦接至下一級電晶體(即第一中壓開關MP12)的源極端。第二級電晶體(即第一中壓開關MP12)的汲極端耦接至下一級電晶體(即第一中壓開關MP13)的源極端。最後一級電晶體(即第一中壓開關MP13)的汲極端耦接至輸出端OT。第一級電晶體(即第一中壓開關MP11)的閘極端耦接至輔助開關串聯組211的第二端以接收第一偏壓電壓VG1,第二級電晶體(即第一中壓開關MP12)的閘極端耦接至偏壓開關串聯組212的第二端以接收第一偏壓電壓VG2,而最後一級電晶體(即第一中壓開關MP13)的閘極端耦接至偏壓開關串聯組213的第二端以接收第一偏壓電壓VG3。另外,輔助元件240耦接在第一級電晶體(即第一中壓開關MP11)的源極端與閘極端之間,輔助元件240的實施方式及運作類似於圖1的輔助元件140,故可參酌上述的相關說明,不再贅述。 In the embodiment shown in FIG. 2, the first medium voltage switches MP11, MP12, and MP13 may be transistors, but the invention is not limited thereto. The source terminal of the first stage transistor (ie, the first medium voltage switch MP11) is coupled to the power supply voltage VHH. The 汲 terminal of the first stage transistor (ie, the first medium voltage switch MP11) is coupled to the source terminal of the next stage transistor (ie, the first medium voltage switch MP12). The 汲 terminal of the second stage transistor (ie, the first medium voltage switch MP12) is coupled to the source terminal of the next stage transistor (ie, the first medium voltage switch MP13). The 汲 terminal of the last stage transistor (ie, the first medium voltage switch MP13) is coupled to the output terminal OT. The gate terminal of the first stage transistor (ie, the first medium voltage switch MP11) is coupled to the second end of the auxiliary switch series group 211 to receive the first bias voltage VG1, and the second stage transistor (ie, the first medium voltage switch) The gate terminal of the MP12) is coupled to the second terminal of the bias switch series group 212 to receive the first bias voltage VG2, and the gate terminal of the last stage transistor (ie, the first medium voltage switch MP13) is coupled to the bias switch The second end of the series set 213 is to receive the first bias voltage VG3. In addition, the auxiliary component 240 is coupled between the source terminal and the gate terminal of the first-stage transistor (ie, the first medium-voltage switch MP11). The implementation and operation of the auxiliary component 240 are similar to the auxiliary component 140 of FIG. Regardless of the above relevant description, we will not repeat them.
在圖2所示的實施例中,為了避免第一中壓開關MP13發生崩潰,故配置了二極體DM,其中二極體DM的陽極端耦接第一中壓開關MP12的源極端,且二極體DM的陰極端耦接至偏壓開關串聯組213的第二中壓開關MP3_6的汲極端。關於二極體DM的配置位置稍後會再詳細說明。 In the embodiment shown in FIG. 2, in order to avoid the collapse of the first medium voltage switch MP13, the diode DM is disposed, wherein the anode end of the diode DM is coupled to the source terminal of the first medium voltage switch MP12, and The cathode end of the diode DM is coupled to the 汲 terminal of the second medium voltage switch MP3_6 of the bias switch series group 213. The configuration position of the diode DM will be described in detail later.
在圖2所示的實施例中,第二開關串聯組220可包括電阻R1、兩個第三中壓開關MN2、MN3、輸入中壓開關MN1以及第二電流源222。電阻R1的第一端耦接至輔助開關串聯組211的第二端。第三中壓開關MN3與第三中壓開關MN2依序串接,且串接在電阻R1的第二端與第一節點ND1之間。第二電流源222耦接在第一節點ND1與接地電壓GND之間,以提供輔助開關串聯組211運作所需的第二偏壓電流。輸入中壓開關MN1耦接在第一節點ND1與接地電壓GND之間,且受控於控制信號CRS而啟閉。值得一提的是,第三中壓開關MN2及MN3分別受控於輸入偏壓電壓VSP以及第二偏壓電壓VG21,以防止輸入中壓開關MN1發生崩潰,其中輸入偏壓電壓VSP可為一固定的中壓電壓值,例如5伏特,但本發明並不以此為限。值得一提的是,本發明所配置的第三中壓開關的數量L與第一中壓開關M的數量相關聯,亦即L=M-1。 In the embodiment shown in FIG. 2, the second switch series set 220 can include a resistor R1, two third medium voltage switches MN2, MN3, an input medium voltage switch MN1, and a second current source 222. The first end of the resistor R1 is coupled to the second end of the auxiliary switch series group 211. The third medium voltage switch MN3 and the third medium voltage switch MN2 are serially connected in series, and are connected in series between the second end of the resistor R1 and the first node ND1. The second current source 222 is coupled between the first node ND1 and the ground voltage GND to provide a second bias current required for the auxiliary switch series group 211 to operate. The input medium voltage switch MN1 is coupled between the first node ND1 and the ground voltage GND, and is controlled to open and close by the control signal CRS. It is worth mentioning that the third medium voltage switches MN2 and MN3 are respectively controlled by the input bias voltage VSP and the second bias voltage VG21 to prevent the input medium voltage switch MN1 from collapsing, wherein the input bias voltage VSP can be one. A fixed medium voltage voltage value, for example, 5 volts, but the invention is not limited thereto. It is worth mentioning that the number L of the third medium voltage switches configured by the present invention is related to the number of the first medium voltage switches M, that is, L=M-1.
在圖2所示的實施例中,電流鏡電路250用以接收輸入偏壓電壓VSP,並據以產生第二偏壓電壓VG21。詳細來說,電流鏡電路250可包括參考電路251以及一個映射電路252。參考電路 251用以接收輸入偏壓電壓VSP,並據以產生參考電壓VR及參考電流。映射電路252接收參考電壓VR以映射出偏壓電流,並據以產生第二偏壓電壓VG21。值得一提的是,本發明所配置的映射電路的數量W與第一中壓開關M的數量相關聯,亦即W=M-2。 In the embodiment shown in FIG. 2, the current mirror circuit 250 is operative to receive the input bias voltage VSP and thereby generate a second bias voltage VG21. In detail, the current mirror circuit 250 can include a reference circuit 251 and a mapping circuit 252. Reference circuit The 251 is configured to receive the input bias voltage VSP, and accordingly generate the reference voltage VR and the reference current. The mapping circuit 252 receives the reference voltage VR to map the bias current and accordingly generates the second bias voltage VG21. It is worth mentioning that the number W of mapping circuits configured by the present invention is related to the number of first medium voltage switches M, that is, W=M-2.
更進一步來說,參考電路251可包括第三開關串聯組2513、二極體DP以及第四開關串聯組2514。第三開關串聯組2513包括第四中壓開關MP5_1。第四中壓開關MP5_1串接在電源電壓VHH與第二節點ND2之間,並產生參考電壓VR。在圖2的實施例中,第四中壓開關MP5_1可為電晶體,其中電晶體的源極端耦接電源電壓VHH,且電晶體的閘極端與汲極端相耦接並耦接至第二節點ND2。 Still further, the reference circuit 251 can include a third switch series group 2513, a diode DP, and a fourth switch series group 2514. The third switch series group 2513 includes a fourth medium voltage switch MP5_1. The fourth medium voltage switch MP5_1 is connected in series between the power supply voltage VHH and the second node ND2, and generates a reference voltage VR. In the embodiment of FIG. 2, the fourth medium voltage switch MP5_1 can be a transistor, wherein a source terminal of the transistor is coupled to the power supply voltage VHH, and a gate terminal of the transistor is coupled to the 汲 terminal and coupled to the second node. ND2.
二極體DP的陽極端接收輸入偏壓電壓VSP,且二極體DP的陰極端可產生初始箝制電壓VCP。第四開關串聯組2514耦接在第二節點ND2與接地電壓GND之間,且受控於輸入偏壓電壓VSP及初始箝制電壓VCP而提供第三開關串聯組2513運作所需的第三偏壓電流。詳言之,第四開關串聯組包括2514可包括第三電流源I251以及兩個第五中壓開關MNC1、MNC2。第三電流源I251的第一端耦接接地電壓GND。第五中壓開關MNC2及第五中壓開關MNC1分別受控於初始箝制電壓VCP及輸入偏壓電壓VSP。第五中壓開關MNC2及第五中壓開關MNC1依序串接,且串接在該第二節點ND2與第三電流源I251的第二端之間。 The anode terminal of the diode DP receives the input bias voltage VSP, and the cathode terminal of the diode DP generates the initial clamp voltage VCP. The fourth switch series group 2514 is coupled between the second node ND2 and the ground voltage GND, and is controlled by the input bias voltage VSP and the initial clamp voltage VCP to provide a third bias required for the third switch series group 2513 to operate. Current. In detail, the fourth switch series group including 2514 may include a third current source I251 and two fifth medium voltage switches MNC1, MNC2. The first end of the third current source I251 is coupled to the ground voltage GND. The fifth medium voltage switch MNC2 and the fifth medium voltage switch MNC1 are controlled by the initial clamp voltage VCP and the input bias voltage VSP, respectively. The fifth medium voltage switch MNC2 and the fifth medium voltage switch MNC1 are serially connected in series, and are connected in series between the second node ND2 and the second end of the third current source I251.
映射電路252可包括第五開關串聯組2525以及一個第六 中壓開關MPC6。第五開關串聯組2525具有多個第七中壓開關MN5_1~MN5_11。第七中壓開關MN5_1~MN5_11依序串接,且串接在第三節點ND31與接地電壓GND之間,以產生第二偏壓電壓VG21。第六中壓開關MPC6耦接在電源電壓VHH與第三節點ND31之間,且反應於參考電壓VR而產生第五開關串聯組2525運作所需的第四偏壓電流。 The mapping circuit 252 can include a fifth switch series group 2525 and a sixth Medium voltage switch MPC6. The fifth switch series group 2525 has a plurality of seventh medium voltage switches MN5_1~MN5_11. The seventh medium voltage switches MN5_1~MN5_11 are serially connected in series, and are connected in series between the third node ND31 and the ground voltage GND to generate a second bias voltage VG21. The sixth medium voltage switch MPC6 is coupled between the power supply voltage VHH and the third node ND31, and reacts with the reference voltage VR to generate a fourth bias current required for the fifth switch series group 2525 to operate.
特別的是,映射電路252的第三節點ND31更與二極體DP的陰極端相耦接,藉以在電源電壓VHH被拉昇至高壓後,第七中壓開關MN5_1~MN5_11所產生的第二偏壓電壓VG21可取代初始箝制電壓VCP以控制第五中壓開關MNC2,從而避免第五中壓開關MNC1崩潰。稍後會進行詳細說明。 In particular, the third node ND31 of the mapping circuit 252 is further coupled to the cathode end of the diode DP, so that after the power supply voltage VHH is pulled up to a high voltage, the second intermediate voltage switch MN5_1~MN5_11 generates a second The bias voltage VG21 can replace the initial clamp voltage VCP to control the fifth medium voltage switch MNC2, thereby preventing the fifth medium voltage switch MNC1 from collapsing. A detailed description will be given later.
於圖2所示的實施例中,第七中壓開關MN5_1~MN5_11可為電晶體,但本發明並不以此為限。其中第一級電晶體(即第七中壓開關MN5_11)的源極端耦接接地電壓GND。第一級電晶體(即第七中壓開關MN5_11)的閘極端與汲極端相耦接並耦接至下一級電晶體(即第七中壓開關MN5_10)的源極端。其餘之電晶體的耦接方式可依此類推。而最後一級電晶體(即第七中壓開關MN5_1)的閘極端與汲極端相耦接並耦接至第三節點ND31。值得一提的是,在圖2所示的第七中壓開關MN5_1~MN5_11中,各電晶體的基體可耦接至其本身的源極端,但本發明並不限於此。在本發明的另一實施例中,為了節省電路面積,第七中壓開關MN5~MN5_11可以共用一基體,特別是,可以共用的第七中壓開關數量可以是至 少兩顆,而至多數量則可由第七中壓開關的崩潰電壓與臨界電壓來決定,亦即崩潰電壓除以臨界電壓(倘若無法整除,則可對商數採無條件進位以取得上述至多數量)。舉例來說,倘若第七中壓開關的崩潰電壓為6伏特,且臨界電壓為1伏特,則最多是6顆第七中壓開關可共用一基體,故,第七中壓開關MN5_1~MN5_6可以共用一基體,且共用的基體耦接至第七中壓開關MN5_1~MN5_6中的最低電壓(即第七中壓開關MN5_6的源極端。類似地,第七中壓開關MN5_7~MN5_11可以共用一基體,且共用的基體耦接至第七中壓開關MN5_7~MN5_11中的最低電壓(即第七中壓開關MN5_11的源極端,亦即接地電壓GND)。上述範例中的第七中壓開關的崩潰電壓為6伏特,且臨界電壓為1伏特僅為例示說明,並非用以限制本發明。 In the embodiment shown in FIG. 2, the seventh medium voltage switch MN5_1~MN5_11 may be a transistor, but the invention is not limited thereto. The source terminal of the first-stage transistor (ie, the seventh medium-voltage switch MN5_11) is coupled to the ground voltage GND. The gate terminal of the first stage transistor (ie, the seventh medium voltage switch MN5_11) is coupled to the drain terminal and coupled to the source terminal of the next stage transistor (ie, the seventh medium voltage switch MN5_10). The coupling of the remaining transistors can be deduced by analogy. The gate terminal of the last stage transistor (ie, the seventh medium voltage switch MN5_1) is coupled to the 汲 terminal and coupled to the third node ND31. It is worth mentioning that in the seventh medium voltage switch MN5_1~MN5_11 shown in FIG. 2, the base of each transistor can be coupled to its own source terminal, but the invention is not limited thereto. In another embodiment of the present invention, in order to save circuit area, the seventh medium voltage switches MN5~MN5_11 may share a base body, and in particular, the number of seventh medium voltage switches that can be shared may be There are two fewer, and at most the number can be determined by the breakdown voltage and the threshold voltage of the seventh medium voltage switch, that is, the breakdown voltage is divided by the threshold voltage (if the divisible is not possible, the quotient can be unconditionally carried to obtain the above-mentioned maximum number) . For example, if the breakdown voltage of the seventh medium voltage switch is 6 volts and the threshold voltage is 1 volt, then at most 6 seventh medium voltage switches can share a base body, so the seventh medium voltage switch MN5_1~MN5_6 can Sharing a substrate, and the shared base is coupled to the lowest voltage of the seventh medium voltage switches MN5_1~MN5_6 (ie, the source terminal of the seventh medium voltage switch MN5_6. Similarly, the seventh medium voltage switches MN5_7~MN5_11 can share a base body. And the shared base body is coupled to the lowest voltage of the seventh medium voltage switch MN5_7~MN5_11 (ie, the source terminal of the seventh medium voltage switch MN5_11, that is, the ground voltage GND). The collapse of the seventh medium voltage switch in the above example The voltage is 6 volts and the threshold voltage of 1 volt is merely illustrative and is not intended to limit the invention.
在本發明的其他實施例中,第七中壓開關MN5_1~MN5_11可改採二極體來實現,但本發明並不以此為限。其中第一級二極體(即第七中壓開關MN5_11)的陰極端耦接至接地電壓GND。第一級二極體(即第七中壓開關MN5_11)的陽極端耦接至下一級二極體(即第二中壓開關MN5_10)的陰極端。其餘之二極體的耦接方式可依此類推。而最後一級二極體(即第二中壓開關MN5_1)的陽極端可耦接至第三節點ND31。 In other embodiments of the present invention, the seventh medium voltage switch MN5_1~MN5_11 can be implemented by using a diode, but the invention is not limited thereto. The cathode end of the first diode (ie, the seventh medium voltage switch MN5_11) is coupled to the ground voltage GND. The anode end of the first-stage diode (ie, the seventh medium voltage switch MN5_11) is coupled to the cathode end of the next-stage diode (ie, the second medium-voltage switch MN5_10). The coupling of the remaining diodes can be deduced by analogy. The anode end of the last diode (ie, the second medium voltage switch MN5_1) may be coupled to the third node ND31.
在圖2所示的實施例中,電源電壓VHH可為正電高壓;第一中壓開關MP11~MP13、第二中壓開關MP1_1~MP1_6、MP2_1~MP2_6與MP3_1~MP3_11、第四中壓開關MP5_1以及第 六中壓開關MPC6可為P型金氧半場效電晶體;而第三中壓開關MN2~MN3、輸入中壓開關MN1、第五中壓開關MNC1與MNC5以及第七中壓開關MN5_1~MN5_11可為N型金氧半場效電晶體。如此一來,高壓電源裝置200可基於控制信號CRS而提供正電的輸出電壓至輸出端OT。但本發明並不以此為限。 In the embodiment shown in FIG. 2, the power supply voltage VHH can be a positive high voltage; the first medium voltage switch MP11~MP13, the second medium voltage switch MP1_1~MP1_6, MP2_1~MP2_6 and MP3_1~MP3_11, and the fourth medium voltage switch MP5_1 and the first The six medium voltage switch MPC6 can be a P-type gold-oxygen half field effect transistor; and the third medium voltage switch MN2~MN3, the input medium voltage switch MN1, the fifth medium voltage switch MNC1 and MNC5, and the seventh medium voltage switch MN5_1~MN5_11 can be It is an N-type gold oxide half field effect transistor. As such, the high voltage power supply device 200 can provide a positive output voltage to the output terminal OT based on the control signal CRS. However, the invention is not limited thereto.
在本發明的其他實施例中,圖2的電源電壓VHH可為負電高壓;第一中壓開關MP11~MP13、第二中壓開關MP1_1~MP1_6、MP2_1~MP2_6與MP3_1~MP3_11、第四中壓開關MP5_1以及第六中壓開關MPC6可變更為N型金氧半場效電晶體;而第三中壓開關MN2~MN3、輸入中壓開關MN1、第五中壓開關MNC1與MNC5以及第七中壓開關MN5_1~MN5_11可變更為P型金氧半場效電晶體。如此一來,圖2的高壓電源裝置200可基於控制信號CRS而提供負電的輸出電壓至輸出端OT。 In other embodiments of the present invention, the power supply voltage VHH of FIG. 2 may be a negative voltage high voltage; the first medium voltage switch MP11~MP13, the second medium voltage switch MP1_1~MP1_6, MP2_1~MP2_6 and MP3_1~MP3_11, and the fourth medium voltage The switch MP5_1 and the sixth medium voltage switch MPC6 can be changed to N-type gold-oxygen half field effect transistors; and the third medium voltage switches MN2 to MN3, the input medium voltage switch MN1, the fifth medium voltage switch MNC1 and MNC5, and the seventh medium voltage The switches MN5_1~MN5_11 can be changed to more P-type gold oxide half field effect transistors. As such, the high voltage power supply device 200 of FIG. 2 can provide a negative output voltage to the output terminal OT based on the control signal CRS.
值得一提的是,為了避免第一中壓開關MP11~MP13以及輸入中壓開關MN1因電源電壓VHH的高壓而發生崩潰,輔助開關串聯組211中的第二中壓開關MP1_1~MP1_6的數量、偏壓開關串聯組212中的第二中壓開關MP2_1~MP2_6的數量、偏壓開關串聯組213中的第二中壓開關MP3_1~MP3_11的數量以及二極體DM的耦接位置必須精心設計。 It is worth mentioning that, in order to prevent the first medium voltage switch MP11~MP13 and the input medium voltage switch MN1 from collapsing due to the high voltage of the power supply voltage VHH, the number of the second medium voltage switches MP1_1~MP1_6 in the auxiliary switch series group 211, The number of the second medium voltage switches MP2_1~MP2_6 in the bias switch series group 212, the number of the second medium voltage switches MP3_1~MP3_11 in the bias switch series group 213, and the coupling position of the diode DM must be carefully designed.
以下假設圖2的輸入偏壓電壓VSP為5伏特,二極體DM以及二極體DP的順向偏壓VF為1伏特,P型金氧半場效電晶體及N型金氧半場效電晶體的崩潰電壓(breakdown voltage,下稱Vbd) 為6伏特,且P型金氧半場效電晶體導通的臨界電壓(threshold voltage,下稱Vtp)為-1伏特,而N型金氧半場效電晶體導通的臨界電壓(下稱Vtn)為1伏特,電源電壓VHH的最大值(下稱VHHmax)可設定在16伏特,而電源電壓VHH的最小值(下稱VHHmin)可設定在1伏特。 The following assumes that the input bias voltage VSP of FIG. 2 is 5 volts, the forward bias voltage VF of the diode DM and the diode DP is 1 volt, the P-type MOS half-field effect transistor and the N-type MOS half-field effect transistor. Breakdown voltage (hereinafter referred to as Vbd) It is 6 volts, and the threshold voltage (hereinafter referred to as Vtp) of the P-type MOSFET is -1 volt, and the threshold voltage (hereinafter referred to as Vtn) of the N-type MOS half-field transistor is 1 Volt, the maximum value of the power supply voltage VHH (hereinafter referred to as VHHmax) can be set at 16 volts, and the minimum value of the power supply voltage VHH (hereinafter referred to as VHHmin) can be set at 1 volt.
一般來說,通常會先將輸入偏壓電壓VSP及電源電壓VHH(約為輸入偏壓電壓VSP的電壓值)提供給高壓電源裝置200,故初始箝制電壓VCP的初始值為4伏特(即VSP-VF),而第二偏壓電壓VG21等於初始箝制電壓VCP的初始值為4伏特。此時,輸入偏壓電壓VSP(為5伏特)及初始箝制電壓VCP(為4伏特)可分別用來對第五中壓開關MNC1及MNC2進行偏壓,致使參考電路251可產生參考電壓VR及參考電流,並使映射電路252映射出偏壓電流,從而完成電流鏡電路250的預充電動作。接著,可在高壓的應用下將電源電壓VHH拉昇(例如拉昇至VHHmax,為16伏特),此時,第五開關串聯組2525將產生偏壓電壓VG21為11伏特(即11×Vtn),並將初始箝制電壓VCP由4伏特拉昇至11伏特。換句話說,此時的偏壓電壓VG21不僅對第三中壓開關MN3進行偏壓,也用來對第五中壓開關MNC2進行偏壓。由於電源電壓VHH拉昇至16伏特後,初始箝制電壓VCP由4伏特拉昇至11伏特,故可避免第五中壓開關MNC2發生崩潰。 Generally, the input bias voltage VSP and the power supply voltage VHH (approximately the voltage value of the input bias voltage VSP) are usually supplied to the high voltage power supply device 200, so the initial value of the initial clamp voltage VCP is 4 volts (ie, VSP). -VF), and the second bias voltage VG21 is equal to the initial value of the initial clamp voltage VCP of 4 volts. At this time, the input bias voltage VSP (5 volts) and the initial clamp voltage VCP (4 volts) can be used to bias the fifth medium voltage switches MNC1 and MNC2, respectively, so that the reference circuit 251 can generate the reference voltage VR and The current is referenced and the mapping circuit 252 is mapped out of the bias current to complete the precharge operation of the current mirror circuit 250. Then, the power supply voltage VHH can be pulled up (for example, pulled to VHHmax, which is 16 volts) under high voltage application. At this time, the fifth switch series group 2525 will generate a bias voltage VG21 of 11 volts (ie, 11 × Vtn ). And raise the initial clamping voltage VCP from 4 volts to 11 volts. In other words, the bias voltage VG21 at this time not only biases the third medium voltage switch MN3 but also biases the fifth medium voltage switch MNC2. Since the initial clamping voltage VCP rises from 4 volts to 11 volts after the power supply voltage VHH is pulled up to 16 volts, the collapse of the fifth medium voltage switch MNC2 can be avoided.
另外,在電源電壓VHH為16伏特的情況下,為了避免第一中壓開關MP11的源極端與汲極端之間發生崩潰,第一中壓 開關MP12的源極端的電壓值VP1可設定為11伏特(最小值);且為了避免第一中壓開關MP12的源極端與汲極端之間發生崩潰,第一中壓開關MP13的源極端的電壓值VP2可設定在6伏特(最小值)。於上述情境下,第二中壓開關MP1_1~MP1_6的數量,將由崩潰電壓Vbd及臨界電壓Vtp決定,例如上述式(1)所示,其數量為6個。而第二中壓開關MP2_1~MP2_6的數量,將由電源電壓VHH的最大值VHHmax、第一中壓開關MP12的源極端的電壓值VP1以及臨界電壓Vtp決定,例如上述式(2)所示,其數量為6個。另外,第二中壓開關MP3_1~MP3_11的數量,將由電源電壓VHH的最大值VHHmax、第一中壓開關MP13的源極端的電壓值VP2以及臨界電壓Vtp決定,例如下列式(3)所示,其中S3為第二中壓開關MP3_1~MP3_11的數量,此數量為11。附帶一提的是,倘若根據式(3)的計算結果具有小數,則可對該計算結果採無條件進位以取得該數量。 In addition, in the case where the power supply voltage VHH is 16 volts, in order to avoid a collapse between the source terminal and the 汲 terminal of the first medium voltage switch MP11, the first intermediate voltage The voltage value VP1 of the source terminal of the switch MP12 can be set to 11 volts (minimum value); and in order to avoid a collapse between the source terminal and the 汲 terminal of the first medium voltage switch MP12, the voltage of the source terminal of the first medium voltage switch MP13 The value VP2 can be set at 6 volts (minimum). In the above situation, the number of the second medium voltage switches MP1_1 to MP1_6 is determined by the breakdown voltage Vbd and the threshold voltage Vtp, for example, as shown in the above formula (1), and the number thereof is six. The number of the second medium voltage switches MP2_1 to MP2_6 is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP1 of the source terminal of the first medium voltage switch MP12, and the threshold voltage Vtp, for example, as shown in the above formula (2). The number is six. In addition, the number of the second medium voltage switches MP3_1 to MP3_11 is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP2 of the source terminal of the first medium voltage switch MP13, and the threshold voltage Vtp, for example, as shown in the following formula (3). S3 is the number of the second medium voltage switches MP3_1~MP3_11, and the number is 11. Incidentally, if the calculation result according to the formula (3) has a decimal number, the calculation result may be unconditionally carried to obtain the quantity.
S3=(VHH max-VP2-Vtp)÷|Vtp| 式(3) S 3=( VHH max- VP 2- Vtp )÷| Vtp | (3)
需特別說明的是,二極體DM的陽極端耦接至三個第一中壓開關MP11~MP13中的第二級(即第一中壓開關MP12)的源極端。而二極體DM的陰極端耦接至偏壓開關串聯組212~213中的最後一個偏壓開關串聯組(即偏壓開關串聯組213)的第Z個第二中壓開關的汲極端,其中Z由電源電壓VHH的最大值VHHmax、第一中壓開關MP12的源極端的電壓值VP1以及臨界電壓Vtp來決定,以避免第一中壓開關MP13於負載為輕載時發生崩潰,例如 下列式(4)所示。於本實施例中,Z為6,因此二極體DM的陰極端耦接至偏壓開關串聯組213中的第六個第二中壓開關MP3_6的汲極端。附帶一提的是,倘若根據式(4)的計算結果具有小數,則可對該計算結果採無條件進位以取得該數量。 It should be particularly noted that the anode end of the diode DM is coupled to the source terminal of the second of the three first medium voltage switches MP11~MP13 (ie, the first medium voltage switch MP12). The cathode end of the diode DM is coupled to the 汲 terminal of the Zth second medium voltage switch of the last one of the bias switch series series 212-213 (ie, the bias switch series group 213), Where Z is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP1 of the source terminal of the first medium voltage switch MP12, and the threshold voltage Vtp to prevent the first medium voltage switch MP13 from collapsing when the load is lightly loaded, for example The following formula (4) is shown. In the present embodiment, Z is 6, so the cathode end of the diode DM is coupled to the 汲 terminal of the sixth second medium voltage switch MP3_6 of the bias switch series group 213. Incidentally, if the calculation result according to the formula (4) has a decimal number, the calculation result may be unconditionally carried to obtain the quantity.
Z=(VHH max-VP1-Vtp)÷|Vtp| 式(4) Z =( VHH max- VP 1- Vtp )÷| Vtp | (4)
另外,參考電路251的第三開關串聯組2513中的第四中壓開關MP5_1的數量,可由電源電壓VHH的最小值VHHmin以及臨界電壓Vtp決定,例如下列式(5)所示,其中S41為第四中壓開關MP5_1的數量,其數量為1個。而映射電路252的第五開關串聯組2525中的第七中壓開關MN5_1~MN5_11的數量,可由崩潰電壓Vbd、臨界電壓Vtn與輸入偏壓電壓VSP來決定,例如下列式(6)所示,其中S51為第七中壓開關MN5_1~MN5_11的數量,其數量為11個。附帶一提的是,倘若根據式(5)及式(6)的計算結果具有小數,則可對該計算結果採無條件進位以取得該數量。以下將針對高壓電源裝置200的運作進行說明。 In addition, the number of the fourth intermediate voltage switches MP5_1 in the third switch series group 2513 of the reference circuit 251 can be determined by the minimum value VHHmin of the power supply voltage VHH and the threshold voltage Vtp, for example, as shown in the following formula (5), wherein S41 is the first The number of four medium voltage switches MP5_1 is one. The number of the seventh medium voltage switches MN5_1 MN MN5_11 of the fifth switch series group 2525 of the mapping circuit 252 can be determined by the breakdown voltage Vbd, the threshold voltage Vtn and the input bias voltage VSP, for example, as shown in the following formula (6). S51 is the number of the seventh medium voltage switches MN5_1~MN5_11, and the number thereof is 11. Incidentally, if the calculation result according to the equations (5) and (6) has a decimal number, the calculation result may be unconditionally carried to obtain the quantity. The operation of the high voltage power supply device 200 will be described below.
S41=VHH min÷|Vtp| 式(5) S 41= VHH min÷| Vtp | (5)
S51=(Vbd+Vsp)÷Vtn 式(6) S 51=( Vbd + Vsp )÷ Vtn (6)
當電源電壓VHH為16伏特且輸入偏壓電壓Vsp為5伏特時,電流鏡電路250中的映射電路252將提供11伏特(即11×Vtn)的第二偏壓電壓VG21,而偏壓開關串聯組212所提供的第一偏壓電壓VG2為10伏特(即VHH-6×|Vtp|),二極體DM的陰極端(即偏壓開關串聯組213的第二中壓開關MP3_6的汲極端)的電壓為10伏 特(即VHH-6×|Vtp|),偏壓開關串聯組213所提供的第一偏壓電壓VG3為5伏特(即VHH-11×|Vtp|)。 When the supply voltage VHH is 16 volts and the input bias voltage Vsp is 5 volts, the mapping circuit 252 in the current mirror circuit 250 will provide a second bias voltage VG21 of 11 volts (i.e., 11 x Vtn ) with the bias switch connected in series. The first bias voltage VG2 provided by the group 212 is 10 volts (ie, VHH -6×| Vtp |), and the cathode terminal of the diode DM (ie, the 汲 terminal of the second medium voltage switch MP3_6 of the bias switch series group 213) The voltage is 10 volts (i.e., VHH -6 x | Vtp |), and the first bias voltage VG3 provided by the bias switch series group 213 is 5 volts (i.e., VHH -11 × | Vtp |).
於一情況下,倘若高壓電源裝置200的輸出端OT所接的負載(未繪示)為輕載且輸入中壓開關MN1基於控制信號CRS而被導通時,第三中壓開關MN2及第三中壓開關MN3可分別反應於輸入偏壓電壓VSP(為5伏特)及第二偏壓電壓VG21(為11伏特)而被導通。此時,第一偏壓電壓VG1為10伏特(即VHH-6×|Vtp|),因此第一中壓開關MP11、MP12及MP13可依序被導通。由於負載為輕載,故第一中壓開關MP12的源極端(即二極體DM的陽極端)的電壓為16伏特、第一中壓開關MP13的源極端的電壓為16伏特,且輸出端OT的電壓也是16伏特。基於二極體DM的陰極端的電壓為10伏特,二極體DM的兩端跨壓(為6伏特)將大於二極體DM的順向偏壓(為1伏特),故二極體DM將被導通,致使二極體DM的陰極端的電壓被上拉至15伏特,因此第一偏壓電壓VG3由5伏特上拉至10伏特,而第二中壓開關MP3_1~MP3_6被截止。 In one case, if the load (not shown) connected to the output terminal OT of the high voltage power supply device 200 is lightly loaded and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third medium voltage switch MN2 and the third The medium voltage switch MN3 can be turned on in response to the input bias voltage VSP (which is 5 volts) and the second bias voltage VG21 (which is 11 volts), respectively. At this time, the first bias voltage VG1 is 10 volts (ie, VHH -6 × | Vtp |), so the first medium voltage switches MP11, MP12, and MP13 can be turned on sequentially. Since the load is lightly loaded, the voltage of the source terminal of the first medium voltage switch MP12 (ie, the anode terminal of the diode DM) is 16 volts, the voltage of the source terminal of the first medium voltage switch MP13 is 16 volts, and the output terminal The voltage of the OT is also 16 volts. The voltage at the cathode terminal of the diode DM is 10 volts, and the voltage across the diode DM (6 volts) will be greater than the forward bias of the diode DM (1 volt), so the diode DM will Turned on, causing the voltage at the cathode terminal of the diode DM to be pulled up to 15 volts, so the first bias voltage VG3 is pulled up from 5 volts to 10 volts, and the second medium voltage switches MP3_1~MP3_6 are turned off.
如此一來,第一中壓開關MP11的源極端(為16伏特)與閘極端(為10伏特)的跨壓為6伏特,第一中壓開關MP11的源極端與汲極端(為16伏特)的跨壓為0伏特,且第一中壓開關MP11的閘極端與汲極端的跨壓為6伏特,皆未超過第一中壓開關MP11的崩潰電壓Vbd(為6伏特),故第一中壓開關MP11不會發生崩潰。而第一中壓開關MP12的源極端(為16伏特)與閘極端(為10 伏特)的跨壓為6伏特,第一中壓開關MP12的源極端與汲極端(為16伏特)的跨壓為0伏特,且第一中壓開關MP12的閘極端與汲極端的跨壓為6伏特,皆未超過第一中壓開關MP12的崩潰電壓Vbd(為6伏特),故第一中壓開關MP12亦不會發生崩潰。另外,第一中壓開關MP13的源極端(為16伏特)與閘極端(為10伏特)的跨壓為6伏特,第一中壓開關MP13的源極端與汲極端(為16伏特)的跨壓為0伏特,且第一中壓開關MP13的閘極端與汲極端的跨壓為6伏特,皆未超過第一中壓開關MP13的崩潰電壓Vbd(為6伏特),故第一中壓開關MP13亦不會發生崩潰。 As a result, the voltage across the source terminal (16 volts) and the gate terminal (10 volts) of the first medium voltage switch MP11 is 6 volts, and the source terminal and the 汲 terminal of the first medium voltage switch MP11 (16 volts). The voltage across the voltage is 0 volts, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP11 is 6 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP11 (6 volts), so the first The pressure switch MP11 does not collapse. The source terminal (16 volts) and the gate terminal of the first medium voltage switch MP12 (for 10) The voltage across the volts is 6 volts. The voltage between the source terminal and the 汲 terminal of the first medium voltage switch MP12 (which is 16 volts) is 0 volt, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP12 is 6 volts, none of which exceeds the breakdown voltage Vbd of the first medium voltage switch MP12 (6 volts), so the first medium voltage switch MP12 does not collapse. In addition, the voltage across the source terminal (16 volts) and the gate terminal (10 volts) of the first medium voltage switch MP13 is 6 volts, and the source terminal of the first medium voltage switch MP13 and the 汲 terminal (16 volts) are crossed. The voltage is 0 volt, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP13 is 6 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP13 (6 volts), so the first medium voltage switch MP13 will not crash.
可以理解的是,由於二極體DM於負載為輕載時可被導通,使得第一偏壓電壓VG3由5伏特上拉至10伏特,從而避免第一中壓開關MP13發生崩潰。因此,在負載為輕載且電源電壓VHH於16伏特的高壓情況下,第一中壓開關MP11、MP12及MP13皆不會發生崩潰,因此高壓電源裝置200可正常運作。 It can be understood that since the diode DM can be turned on when the load is light load, the first bias voltage VG3 is pulled up from 5 volts to 10 volts, thereby preventing the first medium voltage switch MP13 from collapsing. Therefore, in the case where the load is light load and the power supply voltage VHH is at a high voltage of 16 volts, the first medium voltage switches MP11, MP12, and MP13 do not collapse, and thus the high voltage power supply device 200 can operate normally.
另一情況是,倘若高壓電源裝置200的輸出端OT所接的負載(未繪示)為重載且輸入中壓開關MN1基於控制信號CRS而被導通時,第三中壓開關MN2及第三中壓開關MN3可分別反應於輸入偏壓電壓VSP(為5伏特)及第二偏壓電壓VG21(為11伏特)而被導通。此時,第一偏壓電壓VG1為10伏特(即VHH-6×|Vtp|),因此第一中壓開關MP11、MP12及MP13可依序被導通。由於負載為重載,故第一中壓開關MP12的源極端(即二極體DM的陽極端)被下拉至11伏特、第一中壓開關MP13的源極端的電壓被下 拉至6伏特,且輸出端OT的電壓被下拉至約為0伏特。基於二極體DM的陰極端的電壓為10伏特,二極體DM的兩端跨壓(為1伏特)並未大於順向偏壓(為1伏特),故二極體DM為截止狀態,因此第一偏壓電壓VG3保持在5伏特,而第二中壓開關MP3_1~MP3_11皆維持在導通狀態。 In another case, if the load (not shown) connected to the output terminal OT of the high voltage power supply device 200 is a heavy load and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third medium voltage switch MN2 and the third The medium voltage switch MN3 can be turned on in response to the input bias voltage VSP (which is 5 volts) and the second bias voltage VG21 (which is 11 volts), respectively. At this time, the first bias voltage VG1 is 10 volts (ie, VHH -6 × | Vtp |), so the first medium voltage switches MP11, MP12, and MP13 can be turned on sequentially. Since the load is heavy, the source terminal of the first medium voltage switch MP12 (ie, the anode terminal of the diode DM) is pulled down to 11 volts, and the voltage at the source terminal of the first medium voltage switch MP13 is pulled down to 6 volts, and The voltage at the output OT is pulled down to approximately 0 volts. The voltage at the cathode terminal of the diode DM is 10 volts, and the voltage across the two ends of the diode DM (which is 1 volt) is not greater than the forward bias voltage (1 volt), so the diode DM is off state, so The first bias voltage VG3 is maintained at 5 volts, and the second medium voltage switches MP3_1~MP3_11 are maintained in an on state.
如此一來,第一中壓開關MP11的源極端(為16伏特)與閘極端(為10伏特)的跨壓為6伏特,第一中壓開關MP11的源極端與汲極端(為11伏特)的跨壓為5伏特,且第一中壓開關MP11的閘極端與汲極端的跨壓為1伏特,皆未超過第一中壓開關MP11的崩潰電壓Vbd(為6伏特),故第一中壓開關MP11不會發生崩潰。而第一中壓開關MP12的源極端(為11伏特)與閘極端(為10伏特)的跨壓為1伏特,第一中壓開關MP12的源極端與汲極端(為6伏特)的跨壓為5伏特,且第一中壓開關MP12的閘極端與汲極端的跨壓為4伏特,皆未超過第一中壓開關MP12的崩潰電壓Vbd(為6伏特),故第一中壓開關MP12亦不會發生崩潰。另外,第一中壓開關MP13的源極端(為6伏特)與閘極端(為5伏特)的跨壓為1伏特,第一中壓開關MP13的源極端與汲極端(為0伏特)的跨壓為6伏特,且第一中壓開關MP13的閘極端與汲極端的跨壓為5伏特,皆未超過第一中壓開關MP13的崩潰電壓Vbd(為6伏特),故第一中壓開關MP13亦不會發生崩潰。由此可知,在負載為重載且電源電壓VHH於16伏特的高壓情況下,第一中壓開關MP11、MP12及MP13皆不會發生崩潰,因此高壓電源裝置200 可正常運作。 As a result, the source voltage of the first medium voltage switch MP11 (16 volts) and the gate terminal (10 volts) are 6 volts across, and the source terminal and the 汲 terminal of the first medium voltage switch MP11 (11 volts). The voltage across the voltage is 5 volts, and the voltage across the gate and the drain of the first medium voltage switch MP11 is 1 volt, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP11 (6 volts), so the first The pressure switch MP11 does not collapse. The voltage across the source terminal (11 volts) and the gate terminal (10 volts) of the first medium voltage switch MP12 is 1 volt, and the source voltage of the first medium voltage switch MP12 and the voltage extreme of the 汲 terminal (6 volts) 5 volts, and the voltage across the gate and the 汲 terminal of the first medium voltage switch MP12 is 4 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP12 (6 volts), so the first medium voltage switch MP12 There will be no collapse. In addition, the voltage across the source terminal (6 volts) and the gate terminal (5 volts) of the first medium voltage switch MP13 is 1 volt, and the source terminal of the first medium voltage switch MP13 and the 汲 terminal (0 volt) cross The voltage is 6 volts, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP13 is 5 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP13 (6 volts), so the first medium voltage switch MP13 will not crash. Therefore, when the load is heavy and the power supply voltage VHH is at a high voltage of 16 volts, the first medium voltage switches MP11, MP12, and MP13 do not collapse, and thus the high voltage power supply device 200 It works normally.
又一情況是,當電源電壓VHH為1伏特時,第七中壓開關MN5_1~MN5_11為截止狀態,電流鏡電路250中的映射電路252所提供的第二偏壓電壓VG21將被維持在初始箝制電壓VCP(為4伏特),而偏壓開關串聯組212所提供的第一偏壓電壓VG2因為第一電流源232耦接到接地電壓GND而為0伏特,二極體DM為截止狀態,偏壓開關串聯組213所提供的第一偏壓電壓VG3因為電流源233接到GND為0伏特。 In another case, when the power supply voltage VHH is 1 volt, the seventh medium voltage switches MN5_1 MN MN5_11 are in an off state, and the second bias voltage VG21 provided by the mapping circuit 252 in the current mirror circuit 250 is maintained at the initial clamping. The voltage VCP (which is 4 volts), and the first bias voltage VG2 provided by the bias switch series group 212 is 0 volts because the first current source 232 is coupled to the ground voltage GND, and the diode DM is turned off. The first bias voltage VG3 provided by the series of voltage switches 213 is 0 volts due to the current source 233 being connected to GND.
當高壓電源裝置200的輸出端OT所接的負載(未繪示)為輕載且輸入中壓開關MN1基於控制信號CRS而被導通時,第三中壓開關MN2及第三中壓開關MN3可分別反應於輸入偏壓電壓VSP(為5伏特)及第二偏壓電壓VG21(為4伏特)而被導通。此時,第一偏壓電壓VG1約為0伏特,因此第一中壓開關MP11、MP12及MP13可依序被導通。由於負載為輕載,故第一中壓開關MP12的源極端的電壓為1伏特,第一中壓開關MP13的源極端的電壓為1伏特,且輸出端的電壓也是1伏特。如此一來,第一中壓開關MP11的源極端與閘極端的跨壓為1伏特,第一中壓開關MP11的源極端與汲極端的跨壓為0伏特,且第一中壓開關MP11的閘極端與汲極端的跨壓為1伏特,皆未超過第一中壓開關MP11的崩潰電壓Vbd(為6伏特),故第一中壓開關MP11不會發生崩潰。第一中壓開關MP12的源極端與閘極端的跨壓為1伏特,第一中壓開關MP12的源極端與汲極端的跨壓為0伏特,且第一中壓開 關MP12的閘極端與汲極端的跨壓為1伏特,皆未超過第一中壓開關MP12的崩潰電壓Vbd(為6伏特),故第一中壓開關MP12亦不會發生崩潰。另外,第一中壓開關MP13的源極端與閘極端的跨壓為1伏特,第一中壓開關MP13的源極端與汲極端的跨壓為0伏特,且第一中壓開關MP13的閘極端與汲極端的跨壓為1伏特,皆未超過第一中壓開關MP13的崩潰電壓Vbd(為6伏特),故第一中壓開關MP13亦不會發生崩潰。可以理解的是,在負載為輕載且電源電壓VHH低至1伏特的情況下,第一中壓開關MP11、MP12及MP13仍可分別被導通,因此高壓電源裝置200在低壓的情況下仍可正常運作。 When the load (not shown) connected to the output terminal OT of the high voltage power supply device 200 is lightly loaded and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third medium voltage switch MN2 and the third medium voltage switch MN3 may be They are turned on in response to the input bias voltage VSP (which is 5 volts) and the second bias voltage VG21 (which is 4 volts). At this time, the first bias voltage VG1 is about 0 volt, so the first medium voltage switches MP11, MP12, and MP13 can be turned on sequentially. Since the load is lightly loaded, the voltage of the source terminal of the first medium voltage switch MP12 is 1 volt, the voltage of the source terminal of the first medium voltage switch MP13 is 1 volt, and the voltage at the output terminal is also 1 volt. In this way, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP11 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP11 is 0 volt, and the first medium voltage switch MP11 The crossover voltage of the gate extreme and the 汲 extreme is 1 volt, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP11, so the first medium voltage switch MP11 does not collapse. The voltage across the source terminal and the gate terminal of the first medium voltage switch MP12 is 1 volt, and the voltage between the source terminal and the 汲 terminal of the first medium voltage switch MP12 is 0 volt, and the first intermediate voltage is opened. The gate voltage of the MP12 is 1 volt across the gate terminal and the 汲 terminal, and the voltage Vbd (6 volts) of the first medium voltage switch MP12 is not exceeded, so the first medium voltage switch MP12 does not collapse. In addition, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP13 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP13 is 0 volt, and the gate terminal of the first medium voltage switch MP13 The voltage across the pole of the 汲 is 1 volt, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP13 (6 volts), so the first medium voltage switch MP13 does not collapse. It can be understood that, when the load is light load and the power supply voltage VHH is as low as 1 volt, the first medium voltage switches MP11, MP12 and MP13 can still be respectively turned on, so that the high voltage power supply device 200 can still be under low voltage conditions. working normally.
另外,當高壓電源裝置200的輸出端OT所接的負載(未繪示)為重載且輸入中壓開關MN1基於控制信號CRS而被導通時,第三中壓開關MN2及第三中壓開關MN3可分別反應於輸入偏壓電壓VSP(為5伏特)及第二偏壓電壓VG21(為4伏特)而被導通。此時,第一偏壓電壓VG1約為0伏特,因此第一中壓開關MP11、MP12及MP13可依序被導通,而第一中壓開關MP12的源極端的電壓以及第一中壓開關MP13的源極端的電壓會被箝位在1伏特。由於負載為重載,故輸出端的電壓被下拉至約為0伏特。如此一來,第一中壓開關MP11的源極端與閘極端的跨壓為1伏特,第一中壓開關MP11的源極端與汲極端的跨壓為0伏特,且第一中壓開關MP11的閘極端與汲極端的跨壓為1伏特,皆未超過第一中壓開關MP11的崩潰電壓Vbd(為6伏特),故第一中壓 開關MP11不會發生崩潰。第一中壓開關MP12的源極端與閘極端的跨壓為1伏特,第一中壓開關MP12的源極端與汲極端的跨壓為0伏特,且第一中壓開關MP12的閘極端與汲極端的跨壓為1伏特,皆未超過第一中壓開關MP12的崩潰電壓Vbd(為6伏特),故第一中壓開關MP12亦不會發生崩潰。另外,第一中壓開關MP13的源極端與閘極端的跨壓為1伏特,第一中壓開關MP13的源極端與汲極端的跨壓為1伏特,且第一中壓開關MP13的閘極端與汲極端的跨壓為0伏特,皆未超過第一中壓開關MP13的崩潰電壓Vbd(為6伏特),故第一中壓開關MP13亦不會發生崩潰。可以理解的是,在負載為重載且電源電壓VHH低至1伏特的情況下,第一中壓開關MP11、MP12及MP13仍可分別被導通,因此高壓電源裝置200在低壓的情況下仍可正常運作。 In addition, when the load (not shown) connected to the output terminal OT of the high voltage power supply device 200 is a heavy load and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third medium voltage switch MN2 and the third medium voltage switch MN3 can be turned on in response to input bias voltage VSP (5 volts) and second bias voltage VG21 (4 volts), respectively. At this time, the first bias voltage VG1 is about 0 volts, so the first medium voltage switches MP11, MP12, and MP13 can be turned on sequentially, and the voltage of the source terminal of the first medium voltage switch MP12 and the first medium voltage switch MP13 The voltage at the source extreme will be clamped at 1 volt. Since the load is heavily loaded, the voltage at the output is pulled down to approximately 0 volts. In this way, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP11 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP11 is 0 volt, and the first medium voltage switch MP11 The voltage across the gate and the 汲 extreme is 1 volt, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP11 (6 volts), so the first medium voltage The switch MP11 does not crash. The voltage across the source terminal and the gate terminal of the first medium voltage switch MP12 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP12 is 0 volt, and the gate terminal of the first medium voltage switch MP12 is connected to the gate terminal. The extreme voltage across the voltage is 1 volt, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP12, so the first medium voltage switch MP12 will not collapse. In addition, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP13 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP13 is 1 volt, and the gate terminal of the first medium voltage switch MP13 The voltage across the pole of the 汲 is 0 volts, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP13, so the first medium voltage switch MP13 does not collapse. It can be understood that, in the case that the load is heavy and the power supply voltage VHH is as low as 1 volt, the first medium voltage switches MP11, MP12 and MP13 can still be respectively turned on, so that the high voltage power supply device 200 can still be under low voltage conditions. working normally.
總的來說,無論負載為輕載或是重載,只要電源電壓VHH是在1伏特至16伏特的電壓範圍內,高壓電源裝置200皆可正常運作。因此高壓電源裝置200可正常運作的電源電壓VHH的範圍以及其輸出電壓的範圍確實可被有效提昇。 In general, the high voltage power supply unit 200 can operate normally as long as the load is light or heavy, as long as the power supply voltage VHH is in the range of 1 volt to 16 volts. Therefore, the range of the power supply voltage VHH in which the high-voltage power supply device 200 can operate normally and the range of its output voltage can be effectively improved.
以下請參照圖3,圖3是依照本發明又一實施例所繪示的高壓電源裝置的電路架構示意圖。高壓電源裝置300可包括四個第一中壓開關MP11、MP12、MP13與MP14、四個第一開關串聯組311、312、313與314(以下稱為:輔助開關串聯組311、偏壓開關串聯組312、偏壓開關串聯組313、偏壓開關串聯組314)、第二開關串聯組320、三個第一電流源332、333與334、輔助元件340、 兩個二極體DM1與DM2、一個第六開關串聯組391以及電流鏡電路350,但不限於此。值得一提的是,本發明所配置的第一開關串聯組的數量等於第一中壓開關的數量。此外,第一電流源的數量L、二極體的數量W以及第六開關串聯組的數量F,皆與第一中壓開關的數量M相關聯,其中L=M-1,W=M-2且F=M-3。第一中壓開關MP11、MP12、MP13與MP14依序串接,且串接在電源電壓VHH與高壓電源裝置300的輸出端OT之間。第一中壓開關MP11、MP12、MP13及MP14可分別受控於第一偏壓電壓VG1、VG2、VG3及VG4,以將電源電壓VHH傳輸至輸出端OT。 Referring to FIG. 3, FIG. 3 is a schematic diagram of a circuit structure of a high voltage power supply device according to another embodiment of the present invention. The high voltage power supply device 300 may include four first medium voltage switches MP11, MP12, MP13 and MP14, four first switch series groups 311, 312, 313 and 314 (hereinafter referred to as: auxiliary switch series group 311, bias switch series Group 312, bias switch series group 313, bias switch series group 314), second switch series group 320, three first current sources 332, 333 and 334, auxiliary component 340, The two diodes DM1 and DM2, a sixth switch series group 391, and the current mirror circuit 350 are not limited thereto. It is worth mentioning that the number of the first switch series groups configured by the present invention is equal to the number of the first medium voltage switches. In addition, the number L of the first current source, the number W of the diodes, and the number F of the sixth switch series are all associated with the number M of the first medium voltage switches, where L=M-1, W=M- 2 and F = M-3. The first medium voltage switches MP11, MP12, MP13 and MP14 are serially connected in series, and are connected in series between the power supply voltage VHH and the output terminal OT of the high voltage power supply device 300. The first medium voltage switches MP11, MP12, MP13, and MP14 may be controlled by the first bias voltages VG1, VG2, VG3, and VG4, respectively, to transmit the power supply voltage VHH to the output terminal OT.
輔助開關串聯組311的第一端以及偏壓開關串聯組312、313、314的第一端耦接電源電壓VHH。輔助開關串聯組311的第二端產生第一偏壓電壓VG1,而偏壓開關串聯組312、313、314的第二端分別產生第一偏壓電壓VG2、VG3、VG4。 The first end of the auxiliary switch series group 311 and the first end of the bias switch series group 312, 313, 314 are coupled to the power supply voltage VHH. The second terminal of the auxiliary switch series group 311 generates a first bias voltage VG1, and the second terminals of the bias switch series group 312, 313, 314 respectively generate first bias voltages VG2, VG3, VG4.
第二開關串聯組320耦接在輔助開關串聯組311的第二端與接地電壓GND之間。第二開關串聯組320用以限制流經輔助開關串聯組311的電流,且受控於控制信號CRS而啟閉,致使輔助開關串聯組311產生第一偏壓電壓VG1。 The second switch series group 320 is coupled between the second end of the auxiliary switch series group 311 and the ground voltage GND. The second switch series group 320 is used to limit the current flowing through the auxiliary switch series group 311, and is controlled to be turned on and off by the control signal CRS, so that the auxiliary switch series group 311 generates the first bias voltage VG1.
第一電流源332、333、334分別耦接在偏壓開關串聯組312、313、314的第二端與接地電壓GND之間,以分別提供偏壓開關串聯組312、313、314運作所需的第一偏壓電流。 The first current sources 332, 333, 334 are respectively coupled between the second ends of the bias switch series groups 312, 313, 314 and the ground voltage GND to respectively provide the operation of the bias switch series groups 312, 313, 314 The first bias current.
輔助開關串聯組311、偏壓開關串聯組312及313的內部架構及實施方式,分別類似於圖2的輔助開關串聯組211、偏壓開 關串聯組212及213,故可參酌上述的相關說明,在此不再贅述。以下僅針對偏壓開關串聯組314進行說明。 The internal structure and implementation manner of the auxiliary switch series group 311 and the bias switch series groups 312 and 313 are similar to the auxiliary switch series group 211 of FIG. 2, respectively. The series of groups 212 and 213 are closed, so the above related descriptions may be referred to, and details are not described herein again. The following is only described for the bias switch series group 314.
偏壓開關串聯組314可包括多個第二中壓開關MP4_1~MP4_16,其中第二中壓開關MP4_1~MP4_16依序串接,且串接在電源電壓VHH與偏壓開關串聯組314的第二端之間。在圖3所示的實施例中,偏壓開關串聯組314的第二中壓開關MP4_1~MP4_16可為電晶體,但本發明並不以此為限。其中第一級電晶體(即第二中壓開關MP4_1)的源極端耦接電源電壓VHH。第一級電晶體(即第二中壓開關MP4_1)的閘極端與汲極端相耦接,並耦接至下一級電晶體(即第二中壓開關MP4_2)的源極端。其餘之電晶體的耦接方式可依此類推。而最後一級電晶體(即第二中壓開關MP4_16)的閘極端與汲極端相耦接,並耦接至偏壓開關串聯組314的第二端。值得一提的是,在圖3所示的第二中壓開關MP4_1~MP4_16中,各電晶體的基體可耦接至其本身的源極端,但本發明並不限於此。在本發明的另一實施例中,為了節省電路面積,偏壓開關串聯組314中的第二中壓開關MP4_1~MP4_16可以共用一基體,特別是,可以共用的第二中壓開關數量可以是至少兩顆,而至多數量則可由第二中壓開關的崩潰電壓與臨界電壓來決定,亦即崩潰電壓除以臨界電壓(倘若無法整除,則可對商數採無條件進位以取得上述至多數量)。舉例來說,倘若第二中壓開關的崩潰電壓為6伏特,且臨界電壓為1伏特,則最多是6顆第二中壓開關可共用一基體,故,第二中壓開關MP4_1~MP4_6 可以共用一基體,且共用的基體耦接至第二中壓開關MP4_1~MP4_6中的最高電壓(即電源電壓VHH)。類似地,第二中壓開關MP4_7~MP4_12可以共用一基體,且共用的基體耦接至第二中壓開關MP4_7~MP4_12中的最高電壓(即第二中壓開關MP4_7的源極端);而第二中壓開關MP4_13~MP4_16可以共用一基體,且共用的基體耦接至第二中壓開關MP4_13~MP4_16中的最高電壓(即第二中壓開關MP4_13的源極端)。上述範例中的第二中壓開關的崩潰電壓為6伏特,且臨界電壓為1伏特僅為例示說明,並非用以限制本發明。 The bias switch series group 314 can include a plurality of second medium voltage switches MP4_1~MP4_16, wherein the second medium voltage switches MP4_1~MP4_16 are serially connected in series, and are serially connected in the power supply voltage VHH and the second of the bias switch series group 314. Between the ends. In the embodiment shown in FIG. 3, the second medium voltage switches MP4_1~MP4_16 of the bias switch series group 314 can be a transistor, but the invention is not limited thereto. The source terminal of the first-stage transistor (ie, the second medium-voltage switch MP4_1) is coupled to the power supply voltage VHH. The gate terminal of the first stage transistor (ie, the second medium voltage switch MP4_1) is coupled to the 汲 terminal and coupled to the source terminal of the next stage transistor (ie, the second medium voltage switch MP4_2). The coupling of the remaining transistors can be deduced by analogy. The gate terminal of the last stage transistor (ie, the second medium voltage switch MP4_16) is coupled to the 汲 terminal and coupled to the second end of the bias switch series group 314. It is worth mentioning that in the second medium voltage switches MP4_1~MP4_16 shown in FIG. 3, the base of each transistor can be coupled to its own source terminal, but the invention is not limited thereto. In another embodiment of the present invention, in order to save circuit area, the second medium voltage switches MP4_1~MP4_16 of the bias switch series group 314 can share a base body. In particular, the number of second medium voltage switches that can be shared can be At least two, and at most the number can be determined by the breakdown voltage and the threshold voltage of the second medium voltage switch, that is, the breakdown voltage is divided by the threshold voltage (if the divisible is not possible, the quotient can be unconditionally carried to obtain the above-mentioned maximum number) . For example, if the breakdown voltage of the second medium voltage switch is 6 volts and the threshold voltage is 1 volt, then at most 6 second medium voltage switches can share a base body, so the second medium voltage switch MP4_1~MP4_6 A base body can be shared, and the shared base body is coupled to the highest voltage of the second medium voltage switches MP4_1~MP4_6 (ie, the power supply voltage VHH). Similarly, the second medium voltage switches MP4_7~MP4_12 can share a base body, and the shared base body is coupled to the highest voltage of the second medium voltage switches MP4_7~MP4_12 (ie, the source terminal of the second medium voltage switch MP4_7); The two medium voltage switches MP4_13~MP4_16 can share a base body, and the common base body is coupled to the highest voltage of the second medium voltage switches MP4_13~MP4_16 (ie, the source terminal of the second medium voltage switch MP4_13). The breakdown voltage of the second medium voltage switch in the above example is 6 volts, and the threshold voltage of 1 volt is merely illustrative and is not intended to limit the present invention.
在本發明的其他實施例中,偏壓開關串聯組314的第二中壓開關MP4_13~MP4_16可改採二極體來實現,其耦接方式可參照上述圖1的第二中壓開關MP1_1~MP1_6為二極體的耦接方式而類推得之,故在此不再贅述。 In other embodiments of the present invention, the second medium voltage switches MP4_13~MP4_16 of the bias switch series group 314 can be implemented by using a diode. For the coupling manner, refer to the second medium voltage switch MP1_1~ of FIG. MP1_6 is analogous to the coupling mode of the diodes, so it will not be described here.
在圖3所示的實施例中,第一中壓開關MP11、MP12、MP13、MP14可為電晶體,但本發明並不以此為限。第一中壓開關MP11、MP12、MP13、MP14為電晶體的耦接方式可參酌上述圖2的相關說明而依此類推,在此不再贅述。另外,輔助元件340耦接在第一級電晶體(即第一中壓開關MP11)的源極端與閘極端之間,輔助元件340的實施方式及運作類似於圖1及圖2的輔助元件140、240,故可參酌上述的相關說明,不再贅述。 In the embodiment shown in FIG. 3, the first medium voltage switches MP11, MP12, MP13, and MP14 may be transistors, but the invention is not limited thereto. The manner in which the first medium voltage switch MP11, MP12, MP13, and MP14 are connected to the transistor can be referred to the related description of FIG. 2 and the like, and will not be further described herein. In addition, the auxiliary component 340 is coupled between the source terminal and the gate terminal of the first-stage transistor (ie, the first medium-voltage switch MP11). The implementation and operation of the auxiliary component 340 are similar to the auxiliary component 140 of FIGS. 1 and 2. 240, so you can refer to the above related instructions, and will not repeat them.
在圖3所示的實施例中,為了避免第一中壓開關MP13及MP14發生崩潰,故分別配置了二極體DM1及DM2,其中二極 體DM1的陽極端耦接第一中壓開關MP12的源極端,二極體DM1的陰極端耦接至偏壓開關串聯組313的第二中壓開關MP3_6的汲極端,二極體DM2的陽極端耦接第一中壓開關MP13的源極端,二極體DM2的陰極端耦接至偏壓開關串聯組314的第二中壓開關MP4_11的汲極端。關於二極體DM1及DM2的配置位置稍後會再詳細說明。 In the embodiment shown in FIG. 3, in order to avoid the collapse of the first medium voltage switch MP13 and MP14, the diodes DM1 and DM2 are respectively arranged, wherein the two poles The anode end of the body DM1 is coupled to the source terminal of the first medium voltage switch MP12, and the cathode end of the diode DM1 is coupled to the 汲 terminal of the second medium voltage switch MP3_6 of the bias switch series group 313, and the anode of the diode DM2 Extremely coupled to the source terminal of the first medium voltage switch MP13, the cathode end of the diode DM2 is coupled to the 汲 terminal of the second medium voltage switch MP4_11 of the bias switch series group 314. The arrangement positions of the diodes DM1 and DM2 will be described in detail later.
在圖3所示的實施例中,第二開關串聯組320可包括電阻R1、三個第三中壓開關MN2、MN3與MN4、輸入中壓開關MN1以及第二電流源322。電阻R1的第一端耦接至輔助開關串聯組311的第二端。第三中壓開關MN4、MN3與MN2依序串接,且串接在電阻R1的第二端與第一節點ND1之間。第二電流源322耦接在第一節點ND1與接地電壓GND之間,以提供輔助開關串聯組311運作所需的第二偏壓電流。輸入中壓開關MN1耦接在第一節點ND1與接地電壓GND之間,且受控於控制信號CRS而啟閉。值得一提的是,第三中壓開關MN2、MN3及MN4分別受控於輸入偏壓電壓VSP、第二偏壓電壓VG21及第二偏壓電壓VG22,以防止輸入中壓開關MN1發生崩潰,其中輸入偏壓電壓VSP可為一固定的中壓電壓值,例如5伏特,但本發明並不以此為限。值得一提的是,本發明所配置的第三中壓開關的數量L與第一中壓開關M的數量相關聯,亦即L=M-1。 In the embodiment shown in FIG. 3, the second switch series set 320 can include a resistor R1, three third medium voltage switches MN2, MN3 and MN4, an input medium voltage switch MN1, and a second current source 322. The first end of the resistor R1 is coupled to the second end of the auxiliary switch series group 311. The third medium voltage switches MN4, MN3 and MN2 are serially connected in series, and are connected in series between the second end of the resistor R1 and the first node ND1. The second current source 322 is coupled between the first node ND1 and the ground voltage GND to provide a second bias current required for the auxiliary switch series 311 to operate. The input medium voltage switch MN1 is coupled between the first node ND1 and the ground voltage GND, and is controlled to open and close by the control signal CRS. It is worth mentioning that the third medium voltage switches MN2, MN3 and MN4 are respectively controlled by the input bias voltage VSP, the second bias voltage VG21 and the second bias voltage VG22 to prevent the input medium voltage switch MN1 from collapsing. The input bias voltage VSP can be a fixed medium voltage voltage value, for example, 5 volts, but the invention is not limited thereto. It is worth mentioning that the number L of the third medium voltage switches configured by the present invention is related to the number of the first medium voltage switches M, that is, L=M-1.
在圖3所示的實施例中,電流鏡電路350用以接收輸入偏壓電壓VSP,並據以產生第二偏壓電壓VG21、VG22。詳細來 說,電流鏡電路350可包括參考電路351以及兩個映射電路352、353。參考電路351用以接收輸入偏壓電壓VSP,並據以產生參考電壓VR及參考電流。映射電路352、353接收參考電壓VR以分別映射出偏壓電流,並分別據以產生第二偏壓電壓VG21、VG22。值得一提的是,本發明所配置的映射電路的數量W與第一中壓開關M的數量相關聯,亦即W=M-2。 In the embodiment shown in FIG. 3, the current mirror circuit 350 is operative to receive the input bias voltage VSP and thereby generate second bias voltages VG21, VG22. Detailed The current mirror circuit 350 can include a reference circuit 351 and two mapping circuits 352, 353. The reference circuit 351 is configured to receive the input bias voltage VSP and generate a reference voltage VR and a reference current accordingly. The mapping circuits 352, 353 receive the reference voltage VR to map the bias currents, respectively, and generate second bias voltages VG21, VG22, respectively. It is worth mentioning that the number W of mapping circuits configured by the present invention is related to the number of first medium voltage switches M, that is, W=M-2.
更進一步來說,參考電路351可包括第三開關串聯組3513、二極體DP以及第四開關串聯組3514。第三開關串聯組3513包括第四中壓開關MP5_1~MP5_5。第四中壓開關MP5_1~MP5_5依序串接在電源電壓VHH與第二節點ND2之間,其中第四中壓開關MP5_1可產生參考電壓VR。在圖3的實施例中,第四中壓開關MP5_1~MP5_5可為電晶體,其中第一級電晶體(第四中壓開關MP5_1)的源極端耦接電源電壓VHH,每一級電晶體(例如第四中壓開關MP5_1))的的閘極端與汲極端相耦接並耦接下一級電晶體(例如第四中壓開關MP5_2)的源極端,且最後一級電晶體(第四中壓開關MP5_5)的的閘極端與汲極端相耦接並耦接至第二節點ND2。另外,二極體DP及第四開關串聯組3514的架構及實施方式分別類似於圖2的二極體DP及第四開關串聯組2514,故可參照上述的相關說明,在此不再贅述。值得一提的是,在圖3所示的第四中壓開關MP5_1~MP5_5中,各電晶體的基體可耦接至其本身的源極端,但本發明並不限於此。在本發明的另一實施例中,為了節省電路面積,第四中壓開關MP5_1~MP5_5可以共用一基 體,特別是,可以共用的第四中壓開關數量可以是至少兩顆,至多數量則可由第四中壓開關的崩潰電壓與臨界電壓來決定,亦即崩潰電壓除以臨界電壓(倘若無法整除,則可對商數採無條件進位以取得上述至多數量)。舉例來說,倘若第四中壓開關的崩潰電壓為6伏特,且臨界電壓為1伏特,則最多是6顆第四中壓開關共用一基體,故,第四中壓開關MP5_1~MP5_5可以共用一基體,且共用的基體耦接至第四中壓開關MP5_1~MP5_5中的最高電壓(即電源電壓VHH)。上述範例中的第四中壓開關的崩潰電壓為6伏特,且臨界電壓為1伏特僅為例示說明,並非用以限制本發明。 Still further, the reference circuit 351 can include a third switch series group 3513, a diode DP, and a fourth switch series group 3514. The third switch series group 3513 includes fourth medium voltage switches MP5_1~MP5_5. The fourth medium voltage switch MP5_1~MP5_5 is serially connected between the power supply voltage VHH and the second node ND2, wherein the fourth medium voltage switch MP5_1 can generate the reference voltage VR. In the embodiment of FIG. 3, the fourth medium voltage switch MP5_1~MP5_5 may be a transistor, wherein a source terminal of the first stage transistor (fourth medium voltage switch MP5_1) is coupled to a power supply voltage VHH, and each stage of the transistor (for example The gate terminal of the fourth medium voltage switch MP5_1)) is coupled to the 汲 terminal and coupled to the source terminal of the next-stage transistor (for example, the fourth medium-voltage switch MP5_2), and the last-stage transistor (the fourth medium-voltage switch MP5_5) The gate terminal is coupled to the 汲 terminal and coupled to the second node ND2. The structure and implementation of the diode DP and the fourth switch series 3514 are similar to the diode DP and the fourth switch series 2514 of FIG. 2 respectively. Therefore, reference may be made to the above description, and details are not described herein again. It is worth mentioning that in the fourth medium voltage switch MP5_1~MP5_5 shown in FIG. 3, the base of each transistor can be coupled to its own source terminal, but the invention is not limited thereto. In another embodiment of the present invention, in order to save circuit area, the fourth medium voltage switches MP5_1~MP5_5 may share a base. In particular, the number of the fourth medium voltage switches that can be shared may be at least two, and the maximum number may be determined by the breakdown voltage and the threshold voltage of the fourth medium voltage switch, that is, the breakdown voltage is divided by the threshold voltage (if it is impossible to divide) , the unconditional carry of the quotient can be obtained to obtain the above-mentioned maximum number). For example, if the breakdown voltage of the fourth medium voltage switch is 6 volts and the threshold voltage is 1 volt, then at most 6 fourth medium voltage switches share a base body, so the fourth medium voltage switch MP5_1~MP5_5 can share A substrate, and the shared base is coupled to the highest voltage of the fourth medium voltage switches MP5_1~MP5_5 (ie, the power supply voltage VHH). The breakdown voltage of the fourth medium voltage switch in the above example is 6 volts, and the threshold voltage of 1 volt is merely illustrative and is not intended to limit the present invention.
在本發明的其他實施例中,除第四中壓開關MP5_1之外,第四中壓開關MP5_2~MP5_5也可改採二極體來實現,但本發明並不以此為限。其中第一級二極體(即第二中壓開關MP5_2)的陽極端耦接第四中壓開關MP5_1的汲極端。第一級二極體(即第二中壓開關MP5_2)的陰極端耦接至下一級二極體(即第二中壓開關MP5_3)的陽極端。其餘之二極體的耦接方式可依此類推。而最後一級二極體(即第二中壓開關MP5_5)的陰極端耦接至第二節點ND2。 In other embodiments of the present invention, in addition to the fourth medium voltage switch MP5_1, the fourth medium voltage switch MP5_2~MP5_5 may also be implemented by using a diode, but the invention is not limited thereto. The anode end of the first-stage diode (ie, the second medium-voltage switch MP5_2) is coupled to the 汲 terminal of the fourth medium-voltage switch MP5_1. The cathode end of the first-stage diode (ie, the second medium-voltage switch MP5_2) is coupled to the anode terminal of the next-stage diode (ie, the second medium-voltage switch MP5_3). The coupling of the remaining diodes can be deduced by analogy. The cathode end of the last diode (ie, the second medium voltage switch MP5_5) is coupled to the second node ND2.
第一級映射電路352可包括第五開關串聯組2525以及兩個第六中壓開關MPC6、MPC61。第五開關串聯組2525的架構及實施方式類似於圖2的第五開關串聯組2525,故可參照上述圖2的相關說明,在此不再贅述。第一級第六中壓開關MPC6與第二級第六中壓開關MPC61依序串接,且依序串接在電源電壓VHH 與第三節點ND31之間。第六中壓開關MPC6可反應於參考電壓VR而產生第五開關串聯組2525運作所需的第四偏壓電流,而第六中壓開關MPC61受控於偏壓電壓VG41以防止第六中壓開關MPC6發生崩潰。 The first level mapping circuit 352 can include a fifth switch series group 2525 and two sixth medium voltage switches MPC6, MPC61. The structure and implementation of the fifth switch series group 2525 is similar to the fifth switch series group 2525 of FIG. 2, so reference may be made to the related description of FIG. 2 above, and details are not described herein again. The first stage sixth intermediate voltage switch MPC6 and the second stage sixth medium voltage switch MPC61 are serially connected in series, and are serially connected in series with the power supply voltage VHH. Between the third node ND31. The sixth medium voltage switch MPC6 can react to the reference voltage VR to generate a fourth bias current required for the operation of the fifth switch series group 2525, and the sixth medium voltage switch MPC61 is controlled by the bias voltage VG41 to prevent the sixth medium voltage. The switch MPC6 crashed.
特別的是,映射電路352的第三節點ND31更與二極體DP的陰極端相耦接,藉以在電源電壓VHH被拉昇至高壓後,第七中壓開關MN5_1~MN5_11所產生的第二偏壓電壓VG21可取代初始箝制電壓VCP以控制五中壓開關MNC2,從而避免第五中壓開關MNC1崩潰。稍後會進行詳細說明。 In particular, the third node ND31 of the mapping circuit 352 is further coupled to the cathode end of the diode DP, so that after the power supply voltage VHH is pulled up to a high voltage, the second intermediate voltage switch MN5_1~MN5_11 generates a second The bias voltage VG21 can replace the initial clamp voltage VCP to control the five medium voltage switch MNC2, thereby preventing the fifth medium voltage switch MNC1 from collapsing. A detailed description will be given later.
第二級映射電路353可包括第五開關串聯組3535以及一個第六中壓開關MPC7。第五開關串聯組3535具有多個第七中壓開關MN7_1~MN7_17。第七中壓開關MN7_1~MN7_17依序串接,且串接在第三節點ND32與接地電壓GND之間,以產生第二偏壓電壓VG22。第六中壓開關MPC7耦接在電源電壓VHH與第三節點ND32之間,且反應於參考電壓VR而產生第五開關串聯組3535運作所需的第四偏壓電流。 The second stage mapping circuit 353 can include a fifth switch series group 3535 and a sixth medium voltage switch MPC7. The fifth switch series group 3535 has a plurality of seventh medium voltage switches MN7_1~MN7_17. The seventh medium voltage switches MN7_1 MN MN7_17 are serially connected in series, and are connected in series between the third node ND32 and the ground voltage GND to generate a second bias voltage VG22. The sixth medium voltage switch MPC7 is coupled between the power supply voltage VHH and the third node ND32, and reacts with the reference voltage VR to generate a fourth bias current required for the fifth switch series group 3535 to operate.
於圖3所示的實施例中,第七中壓開關MN7_1~MN7_17可為電晶體,但本發明並不以此為限。第七中壓開關MN7_1~MN7_17為電晶體的耦接方式可參酌上述圖2的第七中壓開關MN5_1~MN5_11相關說明而類推得之,在此不再贅述。值得一提的是,在圖3所示的第七中壓開關MN7_1~MN7_17中,各電晶體的基體可耦接至其本身的源極端,但本發明並不限於此。在 本發明的另一實施例中,為了節省電路面積,第七中壓開關MN7_1~MN7_17可以共用一基體,特別是,可以共用的第七中壓開關數量可以是至少兩顆,而至多數量則可由第七中壓開關的崩潰電壓與臨界電壓來決定,亦即崩潰電壓除以臨界電壓(倘若無法整除,則可對商數採無條件進位以取得上述至多數量)。舉例來說,倘若第七中壓開關的崩潰電壓為6伏特,且臨界電壓為1伏特,則最多是6顆第七中壓開關可共用一基體,故,第七中壓開關MN7_1~MN7_6可以共用一基體,且共用的基體耦接至第七中壓開關MN7_1~MN7_6中的最低電壓(即第七中壓開關MN7_6的源極端);第七中壓開關MN7_7~MN7_12可以共用一基體,且共用的基體耦接至第七中壓開關MN7_7~MN7_12中的最低電壓(即第七中壓開關MN7_12的源極端);而第七中壓開關MN7_13~MN7_17可以共用一基體,且共用的基體耦接至第七中壓開關MN7_13~MN7_17中的最低電壓(即接地電壓GND)。上述範例中的第七中壓開關的崩潰電壓為6伏特,且臨界電壓為1伏特僅為例示說明,並非用以限制本發明。 In the embodiment shown in FIG. 3, the seventh medium voltage switches MN7_1~MN7_17 may be transistors, but the invention is not limited thereto. The coupling mode of the seventh medium voltage switch MN7_1~MN7_17 for the transistor can be deduced by reference to the description of the seventh medium voltage switch MN5_1~MN5_11 of FIG. 2, and details are not described herein again. It is worth mentioning that in the seventh medium voltage switches MN7_1~MN7_17 shown in FIG. 3, the base of each transistor can be coupled to its own source terminal, but the invention is not limited thereto. in In another embodiment of the present invention, in order to save circuit area, the seventh medium voltage switches MN7_1~MN7_17 may share a base body. In particular, the number of seventh medium voltage switches that can be shared may be at least two, and at most, the number may be The breakdown voltage of the seventh medium voltage switch is determined by the threshold voltage, that is, the breakdown voltage is divided by the threshold voltage (if it is impossible to divisible, the quotient can be unconditionally carried to obtain the above-mentioned maximum number). For example, if the breakdown voltage of the seventh medium voltage switch is 6 volts and the threshold voltage is 1 volt, then at most 6 seventh medium voltage switches can share a matrix, so the seventh medium voltage switch MN7_1~MN7_6 can Sharing a base body, and the shared base body is coupled to the lowest voltage of the seventh medium voltage switches MN7_1 MN MN7_6 (ie, the source terminal of the seventh medium voltage switch MN7_6); the seventh medium voltage switches MN7_7 MN MN7_12 can share a base body, and The shared base body is coupled to the lowest voltage of the seventh medium voltage switches MN7_7~MN7_12 (ie, the source terminal of the seventh medium voltage switch MN7_12); and the seventh medium voltage switch MN7_13~MN7_17 can share a base body and the shared base body coupling Connected to the lowest voltage of the seventh medium voltage switch MN7_13~MN7_17 (ie, the ground voltage GND). The breakdown voltage of the seventh medium voltage switch in the above example is 6 volts, and the threshold voltage of 1 volt is merely illustrative and is not intended to limit the present invention.
在本發明的其他實施例中,第七中壓開關MN7_1~MN7_17可改採二極體來實現,但本發明並不以此為限。第七中壓開關MN7_1~MN7_17為二極體的耦接方式可參酌上述圖2的第七中壓開關MN5_1~MN5_11為二極體的相關說明而類推之,在此不再贅述。 In other embodiments of the present invention, the seventh medium voltage switch MN7_1~MN7_17 can be implemented by using a diode, but the invention is not limited thereto. The seventh medium voltage switch MN7_1~MN7_17 is a coupling mode of the diode. The seventh medium voltage switch MN5_1~MN5_11 of FIG. 2 is referred to as a description of the diode, and will not be described herein.
第六開關串聯組391可包括第八中壓開關 MP8_1~MP8_6,其中第八中壓開關MP8_1~MP8_6依序串接,且串接在電源電壓VHH與第四節點ND4之間。而第四電流源359耦接在第四節點ND4與接地電壓GND之間。 The sixth switch series group 391 can include an eighth medium voltage switch MP8_1~MP8_6, wherein the eighth medium voltage switch MP8_1~MP8_6 are serially connected in series, and are connected in series between the power supply voltage VHH and the fourth node ND4. The fourth current source 359 is coupled between the fourth node ND4 and the ground voltage GND.
值得一提的是,本發明所配置的第H個第六開關串聯組的第八中壓開關的數量,等於L個偏壓開關串聯組中的第H個偏壓開關串聯組的第二中壓開關的數量,其中H為小於或等於F的正整數。在圖3的所示的實施例中有三個偏壓開關串聯組312~314,故L=3;在圖3的所示的實施例中有一個個第六開關串聯組391,故H=1。因此,圖3所配置的第八中壓開關MP8_1~MP8_6的數量,等於第一個偏壓開關串聯組312的第二中壓開關MP2_1~MP2_6的數量,為六個。 It is worth mentioning that the number of the eighth medium voltage switches of the H-th sixth switch series group configured by the present invention is equal to the second of the H-th bias switch series group in the L bias switch series group. The number of pressure switches, where H is a positive integer less than or equal to F. In the illustrated embodiment of FIG. 3, there are three bias switch series groups 312-314, so L=3; in the illustrated embodiment of FIG. 3, there is a sixth switch series group 391, so H=1. . Therefore, the number of the eighth medium voltage switches MP8_1~MP8_6 configured in FIG. 3 is equal to the number of the second medium voltage switches MP2_1~MP2_6 of the first bias switch series group 312, which is six.
於圖3所示的實施例中,第八中壓開關MP8_1~MP8_6可為電晶體,但本發明並不以此為限。第八中壓開關MP8_1~MP8_6為電晶體的耦接方式可參酌上述圖2的第二中壓開關MP2_1~MP2_6相關說明而類推得之,在此不再贅述。值得一提的是,在圖3所示的第八中壓開關MP8_1~MP8_6中,各電晶體的基體可耦接至其本身的源極端,但本發明並不限於此。在本發明的另一實施例中,為了節省電路面積,第八中壓開關MP8_1~MP8_6可以共用一基體,可以共用的第八中壓開關數量可以是至少兩顆,而至多數量則可由第八中壓開關的崩潰電壓與臨界電壓來決定,亦即崩潰電壓除以臨界電壓(倘若無法整除,則可對商數採無條件進位以取得上述至多數量)。舉例來說,倘若第八 中壓開關的崩潰電壓為6伏特,且臨界電壓為1伏特,則最多是6顆第八中壓開關共用一基體,故,第八中壓開關MP8_1~MP8_6可以共用一基體,且共用的基體耦接至第八中壓開關MP8_1~MP8_6中的最高電壓(即電源電壓VHH)。上述範例中的第八中壓開關的崩潰電壓為6伏特,且臨界電壓為1伏特僅為例示說明,並非用以限制本發明。 In the embodiment shown in FIG. 3, the eighth medium voltage switches MP8_1~MP8_6 may be transistors, but the invention is not limited thereto. The coupling mode of the eighth medium voltage switch MP8_1~MP8_6 for the transistor can be deduced by reference to the description of the second medium voltage switch MP2_1~MP2_6 of FIG. 2 above, and details are not described herein again. It is worth mentioning that in the eighth medium voltage switches MP8_1~MP8_6 shown in FIG. 3, the base of each transistor can be coupled to its own source terminal, but the invention is not limited thereto. In another embodiment of the present invention, in order to save the circuit area, the eighth medium voltage switches MP8_1~MP8_6 may share a base body, and the number of the eighth medium voltage switches that can be shared may be at least two, and the maximum number may be the eighth. The breakdown voltage of the medium voltage switch is determined by the threshold voltage, that is, the breakdown voltage is divided by the threshold voltage (if it is impossible to divisible, the quotient can be unconditionally carried to obtain the above-mentioned maximum number). For example, if the eighth The medium voltage switch has a breakdown voltage of 6 volts and a threshold voltage of 1 volt, and at most six eighth medium voltage switches share a base body. Therefore, the eighth medium voltage switch MP8_1~MP8_6 can share a base body and the shared base body. The highest voltage (ie, the power supply voltage VHH) is coupled to the eighth medium voltage switch MP8_1~MP8_6. The breakdown voltage of the eighth medium voltage switch in the above example is 6 volts, and the threshold voltage of 1 volt is merely illustrative and is not intended to limit the present invention.
在本發明的其他實施例中,第八中壓開關MP8_1~MP8_6可改採二極體來實現,但本發明並不以此為限。第八中壓開關MP8_1~MP8_6為二極體的耦接方式可參酌上述圖2的第二中壓開關MP2_1~MP2_6為二極體的相關說明而類推之,在此不再贅述。 In other embodiments of the present invention, the eighth medium voltage switch MP8_1~MP8_6 can be implemented by using a diode, but the invention is not limited thereto. The eighth medium voltage switch MP8_1~MP8_6 is a coupling mode of the diode. The second medium voltage switch MP2_1~MP2_6 of FIG. 2 is a description of the diode, and is not described here.
值得一提的是,本發明所配置的每一級映射電路中的第V級第六中壓開關的閘極端,耦接至第T個第六開關串聯組的第四節點,其中V為小於或等於第六中壓開關的數量且大於或等於二的整數,且T=V-1。因此,於圖3所示的實施例中,第一級映射電路352中的第二級第六中壓開關MPC61的閘極端,耦接至第六開關串聯組391的第四節點ND4(即第八中壓開關MP8_1~MP8_6中的最後一級第八中壓開關MP8_6的閘極端)。特別的是,第二級第六中壓開關MPC61的配置,可避免第一級第六中壓開關MPC6發生崩潰。 It is to be noted that the gate terminal of the sixth intermediate voltage switch of the Vth stage in each stage mapping circuit configured by the present invention is coupled to the fourth node of the series connection group of the Tth sixth switch, wherein V is less than or An integer equal to the number of sixth medium voltage switches and greater than or equal to two, and T=V-1. Therefore, in the embodiment shown in FIG. 3, the gate terminal of the second-stage sixth medium-voltage switch MPC61 in the first-stage mapping circuit 352 is coupled to the fourth node ND4 of the sixth switch series group 391 (ie, The gate terminal of the eighth-stage medium voltage switch MP8_6 of the eighth-stage medium voltage switch MP8_1~MP8_6). In particular, the configuration of the second-stage sixth medium-voltage switch MPC61 can prevent the first-stage sixth medium-voltage switch MPC6 from collapsing.
在圖3所示的實施例中,電源電壓VHH可為正電高壓;第一中壓開關MP11~MP14、第二中壓開關MP1_1~MP1_6、MP2_1~MP2_6與MP3_1~MP3_11、MP4_1~MP4_16、第四中壓開 關MP5_1~MP5_5、第六中壓開關MPC6、MPC61、MPC7以及第八中壓開關MP8_1~MP8_6可為P型金氧半場效電晶體;而第三中壓開關MN2~MN4、輸入中壓開關MN1、第五中壓開關MNC1與MNC5以及第七中壓開關MN5_1~MN5_11、MN7_1~MN7_17可為N型金氧半場效電晶體。如此一來,高壓電源裝置300可基於控制信號CRS而提供正電的輸出電壓至輸出端OT。但本發明並不以此為限。 In the embodiment shown in FIG. 3, the power supply voltage VHH can be a positive high voltage; the first medium voltage switch MP11~MP14, the second medium voltage switch MP1_1~MP1_6, MP2_1~MP2_6 and MP3_1~MP3_11, MP4_1~MP4_16, the first Four medium pressure Off MP5_1~MP5_5, sixth medium voltage switch MPC6, MPC61, MPC7 and eighth medium voltage switch MP8_1~MP8_6 can be P type gold oxygen half field effect transistor; and third medium voltage switch MN2~MN4, input medium voltage switch MN1 The fifth medium voltage switch MNC1 and MNC5 and the seventh medium voltage switch MN5_1~MN5_11, MN7_1~MN7_17 may be N-type gold oxygen half field effect transistors. In this way, the high voltage power supply device 300 can provide a positive output voltage to the output terminal OT based on the control signal CRS. However, the invention is not limited thereto.
在本發明的其他實施例中,電源電壓VHH可為負電高壓;第一中壓開關MP11~MP14、第二中壓開關MP1_1~MP1_6、MP2_1~MP2_6與MP3_1~MP3_11、MP4_1~MP4_16、第四中壓開關MP5_1~MP5_5、第六中壓開關MPC6、MPC61、MPC7以及第八中壓開關MP8_1~MP8_6可為N型金氧半場效電晶體;而第三中壓開關MN2~MN4、輸入中壓開關MN1、第五中壓開關MNC1與MNC5以及第七中壓開關MN5_1~MN5_11、MN7_1~MN7_17可為P型金氧半場效電晶體。如此一來,高壓電源裝置300可基於控制信號CRS而提供負電的輸出電壓至輸出端OT。但本發明並不以此為限。 In other embodiments of the present invention, the power supply voltage VHH may be a negative power high voltage; the first medium voltage switch MP11~MP14, the second medium voltage switch MP1_1~MP1_6, MP2_1~MP2_6 and MP3_1~MP3_11, MP4_1~MP4_16, the fourth middle The pressure switch MP5_1~MP5_5, the sixth medium voltage switch MPC6, the MPC61, the MPC7 and the eighth medium voltage switch MP8_1~MP8_6 may be N-type gold oxygen half field effect transistors; and the third medium voltage switch MN2~MN4, input medium voltage switch The MN1, the fifth medium voltage switch MNC1 and the MNC5, and the seventh medium voltage switches MN5_1~MN5_11, MN7_1~MN7_17 may be P-type gold oxide half field effect transistors. As such, the high voltage power supply device 300 can provide a negative output voltage to the output terminal OT based on the control signal CRS. However, the invention is not limited thereto.
值得一提的是,為了避免第一中壓開關MP11~MP14以及輸入中壓開關MN1因電源電壓VHH的高壓而發生崩潰,輔助開關串聯組311中的第二中壓開關MP1_1~MP1_6的數量、偏壓開關串聯組312中的第二中壓開關MP2_1~MP2_6的數量、偏壓開關串聯組313中的第二中壓開關MP3_1~MP3_11的數量、偏壓開關串 聯組313中的第二中壓開關MP4_1~MP4_16的數量、二極體DM1以及二極體DM2的耦接位置必須精心設計。 It is worth mentioning that, in order to prevent the first medium voltage switch MP11~MP14 and the input medium voltage switch MN1 from collapsing due to the high voltage of the power supply voltage VHH, the number of the second medium voltage switches MP1_1~MP1_6 in the auxiliary switch series group 311, The number of the second medium voltage switches MP2_1~MP2_6 in the bias switch series group 312, the number of the second medium voltage switches MP3_1~MP3_11 in the bias switch series group 313, and the bias switch string The number of the second medium voltage switches MP4_1~MP4_16 in the group 313, the coupling position of the diode DM1 and the diode DM2 must be carefully designed.
以下假設圖3的輸入偏壓電壓VSP為5伏特,二極體DM1、DM2以及二極體DP的順向偏壓VF為1伏特,P型金氧半場效電晶體及N型金氧半場效電晶體的崩潰電壓(breakdown voltage,下稱Vbd)為6伏特,且P型金氧半場效電晶體導通的臨界電壓(threshold voltage,下稱Vtp)為-1伏特,而N型金氧半場效電晶體導通的臨界電壓(下稱Vtn)為1伏特,電源電壓VHH的最大值(下稱VHHmax)可設定在21伏特,而電源電壓VHH的最小值(下稱VHHmin)可設定在5伏特。 The following assumes that the input bias voltage VSP of FIG. 3 is 5 volts, the forward bias voltage VF of the diodes DM1, DM2, and the diode DP is 1 volt, the P-type MOS half-field effect transistor and the N-type MOS half-field effect. The breakdown voltage (hereinafter referred to as Vbd) of the transistor is 6 volts, and the threshold voltage (hereinafter referred to as Vtp) of the P-type MOS field-effect transistor is -1 volt, and the N-type MOSFET is half-effect. The threshold voltage (hereinafter referred to as Vtn) of the transistor is 1 volt, and the maximum value of the power supply voltage VHH (hereinafter referred to as VHHmax) can be set at 21 volts, and the minimum value of the power supply voltage VHH (hereinafter referred to as VHHmin) can be set at 5 volts.
一般來說,通常會先將輸入偏壓電壓VSP及電源電壓VHH(約為輸入偏壓電壓VSP的電壓值)提供給高壓電源裝置300,故初始箝制電壓VCP的初始值為4伏特(即VSP-VF),而第二偏壓電壓VG21等於初始箝制電壓VCP的初始值為4伏特。此時,輸入偏壓電壓VSP(為5伏特)及初始箝制電壓VCP(為4伏特)可分別用來對第五中壓開關MNC1及MNC2進行偏壓,致使參考電路351可產生參考電壓VR及參考電流,並使映射電路352、353映射出偏壓電流,從而完成電流鏡電路350的預充電動作。接著,可在高壓的應用下將電源電壓VHH拉昇(例如拉昇至VHHmax,為21伏特),此時,第五開關串聯組2525將產生偏壓電壓VG21為11伏特(即11×Vtn),並將初始箝制電壓VCP由4伏特拉昇至11伏特。換句話說,此時的偏壓電壓VG21不僅對第三 中壓開關MN3進行偏壓,也用來對第五中壓開關MNC2進行偏壓。由於電源電壓VHH拉昇至21伏特後,第二節點ND2的電壓為16伏特(即21-(5×|Vtp|)),而初始箝制電壓VCP將由4伏特拉昇至11伏特,故可避免第五中壓開關MNC2發生崩潰。 Generally, the input bias voltage VSP and the power supply voltage VHH (approximately the voltage value of the input bias voltage VSP) are usually supplied to the high voltage power supply device 300, so the initial value of the initial clamp voltage VCP is 4 volts (ie, VSP). -VF), and the second bias voltage VG21 is equal to the initial value of the initial clamp voltage VCP of 4 volts. At this time, the input bias voltage VSP (5 volts) and the initial clamp voltage VCP (4 volts) can be used to bias the fifth medium voltage switches MNC1 and MNC2, respectively, so that the reference circuit 351 can generate the reference voltage VR and The current is referenced and the mapping circuits 352, 353 are mapped out of the bias current to complete the precharge operation of the current mirror circuit 350. Then, the power supply voltage VHH can be pulled up (for example, pulled to VHHmax, 21 volts) under high voltage application. At this time, the fifth switch series group 2525 will generate a bias voltage VG21 of 11 volts (ie, 11 × Vtn ). And raise the initial clamping voltage VCP from 4 volts to 11 volts. In other words, the bias voltage VG21 at this time not only biases the third medium voltage switch MN3 but also biases the fifth medium voltage switch MNC2. Since the power supply voltage VHH is pulled up to 21 volts, the voltage at the second node ND2 is 16 volts (ie 21-(5×| Vtp |)), and the initial clamping voltage VCP will rise from 4 volts to 11 volts, thus avoiding The fifth medium voltage switch MNC2 crashes.
另外,在電源電壓VHH為21伏特的情況下,為了避免第一中壓開關MP11的源極端與汲極端之間發生崩潰,第一中壓開關MP 12的源極端的電壓值VP1可設定為16伏特(最小值);為了避免第一中壓開關MP12的源極端與汲極端之間發生崩潰,第一中壓開關MP13的源極端的電壓值VP2可設定為11伏特(最小值);且為了避免第一中壓開關MP13的源極端與汲極端之間發生崩潰,第一中壓開關MP14的源極端的電壓值VP3可設定為6伏特(最小值)。於上述情境下,第二中壓開關MP1_1~MP1_6的數量,將由崩潰電壓Vbd及臨界電壓Vtp決定,例如上述式(1)所示,其數量為6個。而第二中壓開關MP2_1~MP2_6的數量,將由電源電壓VHH的最大值VHHmax、第一中壓開關MP12的源極端的電壓值VP1以及臨界電壓Vtp決定,例如上述式(2)所示,其數量為6個。第二中壓開關MP3_1~MP3_11的數量,將由電源電壓VHH的最大值VHHmax、第一中壓開關MP13的源極端的電壓值VP2以及臨界電壓Vtp決定,例如上述式(3)所示,其數量為11。另外,第二中壓開關MP4_1~MP4_16的數量,將由電源電壓VHH的最大值VHHmax、第一中壓開關MP14的源極端的電壓值VP3以及臨界電壓Vtp決定,例如下列式(7)所示,其中S4為第二中壓開關 MP4_1~MP4_16的數量,此數量為16。附帶一提的是,倘若根據式(7)的計算結果具有小數,則可對該計算結果採無條件進位以取得該數量。 In addition, in the case where the power supply voltage VHH is 21 volts, in order to avoid a collapse between the source terminal and the 汲 terminal of the first medium voltage switch MP11, the voltage value VP1 of the source terminal of the first medium voltage switch MP12 can be set to 16 Volt (minimum); in order to avoid a collapse between the source terminal and the 汲 terminal of the first medium voltage switch MP12, the voltage value VP2 of the source terminal of the first medium voltage switch MP13 can be set to 11 volts (minimum value); To avoid a collapse between the source terminal and the 汲 terminal of the first medium voltage switch MP13, the voltage value VP3 of the source terminal of the first medium voltage switch MP14 can be set to 6 volts (minimum value). In the above situation, the number of the second medium voltage switches MP1_1 to MP1_6 is determined by the breakdown voltage Vbd and the threshold voltage Vtp, for example, as shown in the above formula (1), and the number thereof is six. The number of the second medium voltage switches MP2_1 to MP2_6 is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP1 of the source terminal of the first medium voltage switch MP12, and the threshold voltage Vtp, for example, as shown in the above formula (2). The number is six. The number of the second medium voltage switches MP3_1 to MP3_11 is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP2 of the source terminal of the first medium voltage switch MP13, and the threshold voltage Vtp, for example, as shown in the above formula (3). Is 11. In addition, the number of the second medium voltage switches MP4_1 to MP4_16 is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP3 of the source terminal of the first medium voltage switch MP14, and the threshold voltage Vtp, for example, as shown in the following formula (7). Where S4 is the second medium voltage switch The number of MP4_1~MP4_16, the number is 16. Incidentally, if the calculation result according to the formula (7) has a decimal number, the calculation result may be unconditionally carried to obtain the quantity.
S4=(VHH max-VP3-Vtp)÷|Vtp| 式(7) S 4=( VHH max- VP 3 - Vtp )÷| Vtp | (7)
需特別說明的是,第一顆二極體DM1的陽極端耦接至四個第一中壓開關MP11~MP14中的第二級(即第一中壓開關MP12)的源極端。而二極體DM1的陰極端耦接至偏壓開關串聯組312~314中的第二個偏壓開關串聯組(即偏壓開關串聯組313)的第Z1個第二中壓開關的汲極端,其中Z1由電源電壓VHH的最大值VHHmax、第一中壓開關MP12的源極端的電壓值VP1以及臨界電壓Vtp來決定,以避免第一中壓開關MP13於負載為輕載時發生崩潰,例如下列式(8.1)所示。於本實施例中,Z1為6,因此二極體DM1的陰極端耦接至偏壓開關串聯組313中的第六個第二中壓開關MP3_6的汲極端。附帶一提的是,倘若根據式(8.1)的計算結果具有小數,則可對該計算結果採無條件進位以做為Z1。 It should be noted that the anode end of the first diode DM1 is coupled to the source terminal of the second of the four first medium voltage switches MP11~MP14 (ie, the first medium voltage switch MP12). The cathode terminal of diode DM1 312-314 is coupled to the bias switch switches the series combination of the series combination of the second bias voltage (i.e., bias switch group 313 series) Z 1 of the second pressure dip switch Extremely, where Z 1 is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP1 of the source terminal of the first medium voltage switch MP12, and the threshold voltage Vtp to prevent the first medium voltage switch MP13 from collapsing when the load is lightly loaded. For example, it is shown by the following formula (8.1). In the present embodiment, Z 1 is 6, so the cathode end of the diode DM1 is coupled to the 汲 terminal of the sixth second medium voltage switch MP3_6 in the bias switch series group 313. Incidentally, if the calculation result according to the formula (8.1) has a decimal number, the calculation result may be unconditionally carried as Z 1 .
Z 1=(VHH max-VP1-Vtp)÷|Vtp| 式(8.1) Z 1 =( VHH max- VP 1- Vtp )÷| Vtp | Formula (8.1)
另外,二極體DM2的陽極端耦接至四個第一中壓開關MP11~MP14中的第三級(即第一中壓開關MP13)的源極端。而二極體DM2的陰極端耦接至偏壓開關串聯組312~314中的第三個偏壓開關串聯組(即偏壓開關串聯組314)的第Z2個第二中壓開關的汲極端,其中Z2由電源電壓VHH的最大值VHHmax、第一中壓開關MP13的源極端的電壓值VP2以及臨界電壓Vtp來決定,以 避免第一中壓開關MP14於負載為輕載時發生崩潰,例如下列式(8.2)所示。於本實施例中,Z2為11,因此二極體DM2的陰極端耦接至偏壓開關串聯組314中的第十一個第二中壓開關MP4_11的汲極端。附帶一提的是,倘若根據式(8.2)的計算結果具有小數,則可對該計算結果採無條件進位以做為Z2。 In addition, the anode terminal of the diode DM2 is coupled to the source terminal of the third of the four first medium voltage switches MP11 to MP14 (ie, the first medium voltage switch MP13). Z 2 of the second intermediate-pressure switch and diode DM2 female terminal coupled to the bias switch in series with the third group of the series combination of the bias switch 314 ~ 312 (i.e., the bias switch group 314 series) for pumping Extremely, where Z 2 is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP2 of the source terminal of the first medium voltage switch MP13, and the threshold voltage Vtp to prevent the first medium voltage switch MP14 from collapsing when the load is lightly loaded. For example, it is shown by the following formula (8.2). In the present embodiment, Z 2 is 11, so the cathode end of the diode DM2 is coupled to the 汲 terminal of the eleventh second intermediate voltage switch MP4_11 of the bias switch series group 314. Incidentally, if the calculation result according to the formula (8.2) has a decimal, the calculation result may be unconditionally carried as Z 2 .
Z 2=(VHH max-VP2-Vtp)÷|Vtp| 式(8.2) Z 2 =( VHH max- VP 2- Vtp )÷| Vtp | Formula (8.2)
另外,參考電路351的第三開關串聯組3513中的第四中壓開關MP5_1~MP5_5的數量,可由電源電壓VHH的最小值VHHmin以及臨界電壓Vtp決定,例如上述式(5)所示,其數量為5個。映射電路352的第五開關串聯組2525中的第七中壓開關MN5_1~MN5_11的數量,可由崩潰電壓Vbd、臨界電壓Vtn與輸入偏壓電壓VSP來決定,例如上述式(6)所示,其數量為11個。如此一來,第二偏壓電壓VG21可設定為11伏特。另外,映射電路353的第五開關串聯組3535中的第七中壓開關MN7_1~MN7_17的數量,可由崩潰電壓Vbd、臨界電壓Vtn與第二偏壓電壓VG21來決定,例如下列式(9)所示,其中S61為第七中壓開關MN7_1~MN7_17的數量,此數量為17個。映射電路352的第六中壓開關MPC6、MPC61的數量,可由電源電壓的最大值VHHmax、第二偏壓電壓VG21與崩潰電壓Vbd來決定,以防止發生崩潰,例如下列式(10)所示,其中S71為第六中壓開關MPC6、MPC61的數量,此數量為2個。映射電路353的第六中壓開關MPC7的數量,可由電源電壓的最大值VHHmax、第二偏壓電壓 VG22與崩潰電壓Vbd來決定,以防止發生崩潰,例如下列式(11)所示,其中S81為第六中壓開關MPC7的數量,此數量為1個。附帶一提的是,倘若根據式(9)、式(10)及式(11)的計算結果具有小數,則可對該計算結果採無條件進位以做為該數量。以下將針對高壓電源裝置300的運作進行說明。 In addition, the number of the fourth intermediate voltage switches MP5_1 MP MP5_5 in the third switch series group 3513 of the reference circuit 351 can be determined by the minimum value VHHmin of the power supply voltage VHH and the threshold voltage Vtp, for example, as shown in the above formula (5). It is 5. The number of the seventh medium voltage switches MN5_1 to MN5_11 of the fifth switch series group 2525 of the mapping circuit 352 can be determined by the breakdown voltage Vbd, the threshold voltage Vtn, and the input bias voltage VSP, for example, as shown in the above formula (6). The number is 11. As a result, the second bias voltage VG21 can be set to 11 volts. In addition, the number of the seventh intermediate voltage switches MN7_1 MN MN7_17 of the fifth switch series group 3535 of the mapping circuit 353 can be determined by the breakdown voltage Vbd, the threshold voltage Vtn and the second bias voltage VG21, for example, the following formula (9) It is shown that S61 is the number of the seventh medium voltage switches MN7_1~MN7_17, and the number is 17. The number of the sixth medium voltage switches MPC6, MPC61 of the mapping circuit 352 can be determined by the maximum value VHHmax of the power supply voltage, the second bias voltage VG21, and the breakdown voltage Vbd to prevent collapse, for example, as shown in the following formula (10), S71 is the number of the sixth medium voltage switches MPC6 and MPC61, and the number is two. The number of the sixth medium voltage switch MPC7 of the mapping circuit 353 can be the maximum value VHHmax of the power supply voltage, the second bias voltage The VG 22 and the breakdown voltage Vbd are determined to prevent a collapse, for example, as shown in the following formula (11), wherein S81 is the number of the sixth medium voltage switch MPC7, and the number is one. Incidentally, if the calculation result according to the equations (9), (10), and (11) has a decimal number, the calculation result may be unconditionally carried as the number. The operation of the high voltage power supply device 300 will be described below.
S61=(Vbd+VG21)÷Vtn 式(9) S 61=( Vbd + VG 21)÷ Vtn (9)
S71=(VHH max-VG21)÷Vbd 式(10) S 71=( VHH max- VG 21)÷ Vbd (10)
S81=(VHH max-VG22)÷Vbd 式(11) S 81=( VHH max- VG 22)÷ Vbd (11)
當電源電壓VHH為21伏特且輸入偏壓電壓VSP為5伏特時,第六開關串聯組391的第八中壓開關MP8_6的閘極端將提供15伏特(即VHH-6×|Vtp|)的偏壓電壓VG41以導通第六中壓開關MPC61,電流鏡電路350中的映射電路352將提供11伏特(即11×Vtn)的第二偏壓電壓VG21,電流鏡電路350中的映射電路353將提供17伏特(即17×Vtn)的第二偏壓電壓VG22,而偏壓開關串聯組312所提供的第一偏壓電壓VG2為15伏特(即VHH-6×|Vtp|),二極體DM1的陰極端(即第二中壓開關MP3_6的汲極端)的電壓為15伏特(即VHH-6×|Vtp|),偏壓開關串聯組313所提供的第一偏壓電壓VG3為10伏特(即VHH-11×|Vtp|),二極體DM2的陰極端(即第二中壓開關MP4_11的汲極端)的電壓為10伏特(即VHH-11×|Vtp|),偏壓開關串聯組314所提供的第一偏壓電壓VG4為5伏特(即VHH-16×|Vtp|)。 When the power supply voltage VHH is 21 volts and the input bias voltage VSP is 5 volts, the gate terminal of the eighth medium voltage switch MP8_6 of the sixth switch series group 391 will provide a bias of 15 volts (ie, VHH -6×| Vtp |). The voltage VG41 is applied to turn on the sixth medium voltage switch MPC61, and the mapping circuit 352 in the current mirror circuit 350 will provide a second bias voltage VG21 of 11 volts (i.e., 11 x Vtn ), which will be provided by the mapping circuit 353 in the current mirror circuit 350. The second bias voltage VG22 of 17 volts (ie, 17 × Vtn ), and the first bias voltage VG2 provided by the bias switch series 312 is 15 volts (ie, VHH -6 × | Vtp |), the diode DM1 The cathode terminal (ie, the 汲 terminal of the second medium voltage switch MP3_6) has a voltage of 15 volts (ie, VHH -6×| Vtp |), and the bias voltage switch series 313 provides a first bias voltage VG3 of 10 volts ( That is, VHH -11×| Vtp |), the cathode end of the diode DM2 (ie, the 汲 terminal of the second medium voltage switch MP4_11) has a voltage of 10 volts (ie, VHH -11×| Vtp |), bias switch series group The first bias voltage VG4 provided by 314 is 5 volts (i.e., VHH - 16 x | Vtp |).
於一情況下,倘若高壓電源裝置300的輸出端OT所接的 負載(未繪示)為輕載且輸入中壓開關MN1基於控制信號CRS而被導通時,第三中壓開關MN2~MN4可分別反應於輸入偏壓電壓VSP(為5伏特)、第二偏壓電壓VG21(為11伏特)及第二偏壓電壓VG22(為17伏特)而被導通。此時,第一偏壓電壓VG1為15伏特(即VHH-6×|Vtp|),因此第一中壓開關MP11~MP14可依序被導通。由於負載為輕載,故第一中壓開關MP12的源極端的電壓為21伏特、第一中壓開關MP13的源極端(即二極體DM2的陽極端)的電壓為21伏特,第一中壓開關MP14的源極端的電壓為21伏特,且輸出端OT的電壓也是21伏特。 In a case, if the load (not shown) connected to the output terminal OT of the high voltage power supply device 300 is lightly loaded and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third medium voltage switch MN2 to MN4 may be It is turned on in response to the input bias voltage VSP (which is 5 volts), the second bias voltage VG21 (which is 11 volts), and the second bias voltage VG22 (which is 17 volts). At this time, the first bias voltage VG1 is 15 volts (ie, VHH -6 × | Vtp |), so the first medium voltage switches MP11 to MP14 can be turned on in order. Since the load is lightly loaded, the voltage of the source terminal of the first medium voltage switch MP12 is 21 volts, and the voltage of the source terminal of the first medium voltage switch MP13 (ie, the anode terminal of the diode DM2) is 21 volts, the first The voltage at the source terminal of the voltage switch MP14 is 21 volts, and the voltage at the output terminal OT is also 21 volts.
基於二極體DM1的陰極端的電壓為15伏特,二極體DM1的兩端跨壓(為6伏特)將大於二極體DM1的順向偏壓(為1伏特),故二極體DM1將被導通,致使二極體DM1的陰極端的電壓被上拉至20伏特,因此第一偏壓電壓VG3由10伏特上拉至15伏特,而第二中壓開關MP3_1~MP3_6被截止。另外,基於二極體DM2的陰極端的電壓為10伏特,二極體DM2的兩端跨壓(為11伏特)將大於二極體DM2的順向偏壓(為1伏特),故二極體DM2將被導通,致使二極體DM2的陰極端的電壓被上拉至20伏特,因此第一偏壓電壓VG4由5伏特上拉至15伏特,而第二中壓開關MP4_1~MP4_11被截止。 Based on the voltage at the cathode terminal of the diode DM1 is 15 volts, the voltage across the diode DM1 (6 volts) will be greater than the forward bias of the diode DM1 (1 volt), so the diode DM1 will Turned on, causing the voltage at the cathode terminal of the diode DM1 to be pulled up to 20 volts, so the first bias voltage VG3 is pulled up from 10 volts to 15 volts, and the second medium voltage switches MP3_1~MP3_6 are turned off. In addition, based on the voltage of the cathode terminal of the diode DM2 is 10 volts, the voltage across the two ends of the diode DM2 (11 volts) will be greater than the forward bias of the diode DM2 (1 volt), so the diode The DM2 will be turned on, causing the voltage at the cathode terminal of the diode DM2 to be pulled up to 20 volts, so the first bias voltage VG4 is pulled up from 5 volts to 15 volts, and the second medium voltage switches MP4_1~MP4_11 are turned off.
如此一來,第一中壓開關MP11的源極端(為21伏特)與閘極端(為15伏特)的跨壓為6伏特,第一中壓開關MP11的源極端與汲極端(為21伏特)的跨壓為0伏特,且第一中壓開關MP11 的閘極端與汲極端的跨壓為6伏特,皆未超過第一中壓開關MP11的崩潰電壓Vbd(為6伏特),故第一中壓開關MP11不會發生崩潰。而第一中壓開關MP12的源極端(為21伏特)與閘極端(為15伏特)的跨壓為6伏特,第一中壓開關MP12的源極端與汲極端(為21伏特)的跨壓為0伏特,且第一中壓開關MP12的閘極端與汲極端的跨壓為6伏特,皆未超過第一中壓開關MP12的崩潰電壓Vbd(為6伏特),故第一中壓開關MP12亦不會發生崩潰。第一中壓開關MP13的源極端(為21伏特)與閘極端(為15伏特)的跨壓為6伏特,第一中壓開關MP13的源極端與汲極端(為21伏特)的跨壓為0伏特,且第一中壓開關MP13的閘極端與汲極端的跨壓為6伏特,皆未超過第一中壓開關MP13的崩潰電壓Vbd(為6伏特),故第一中壓開關MP13亦不會發生崩潰。另外,第一中壓開關MP14的源極端(為21伏特)與閘極端(為15伏特)的跨壓為6伏特,第一中壓開關MP14的源極端與汲極端(為21伏特)的跨壓為0伏特,且第一中壓開關MP14的閘極端與汲極端的跨壓為6伏特,皆未超過第一中壓開關MP14的崩潰電壓Vbd(為6伏特),故第一中壓開關MP14亦不會發生崩潰。 As a result, the voltage across the source terminal (21 volts) and the gate terminal (15 volts) of the first medium voltage switch MP11 is 6 volts, and the source terminal and the 汲 terminal of the first medium voltage switch MP11 (21 volts). The crossover voltage is 0 volts, and the first medium voltage switch MP11 The gate voltage of the gate and the extreme voltage of the gate are 6 volts, which do not exceed the breakdown voltage Vbd of the first medium voltage switch MP11 (6 volts), so the first medium voltage switch MP11 does not collapse. The voltage across the source terminal (21 volts) and the gate terminal (15 volts) of the first medium voltage switch MP12 is 6 volts, and the source voltage of the first medium voltage switch MP12 and the voltage extreme of the 汲 terminal (21 volts) It is 0 volt, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP12 is 6 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP12 (6 volts), so the first medium voltage switch MP12 There will be no collapse. The voltage across the source terminal (21 volts) and the gate terminal (15 volts) of the first medium voltage switch MP13 is 6 volts, and the voltage across the source terminal and the 汲 terminal (21 volts) of the first medium voltage switch MP13 is 0 volt, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP13 is 6 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP13 (6 volts), so the first medium voltage switch MP13 is also There won't be a crash. In addition, the voltage across the source terminal (21 volts) and the gate terminal (15 volts) of the first medium voltage switch MP14 is 6 volts, and the source terminal of the first medium voltage switch MP14 and the 汲 terminal (21 volts) cross. The voltage is 0 volt, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP14 is 6 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP14 (6 volts), so the first medium voltage switch MP14 will not crash.
可以理解的是,由於二極體DM1及DM2被導通,使得第一偏壓電壓VG3由10伏特上拉至15伏特,且第一偏壓電壓VG4由5伏特上拉至15伏特,從而避免第一中壓開關MP13及MP14發生崩潰。因此,在負載為輕載且電源電壓VHH於21伏特的高壓情況下,第一中壓開關MP11~MP14皆不會發生崩潰,因此高壓 電源裝置300可正常運作。 It can be understood that since the diodes DM1 and DM2 are turned on, the first bias voltage VG3 is pulled up from 10 volts to 15 volts, and the first bias voltage VG4 is pulled up from 5 volts to 15 volts, thereby avoiding the first A medium voltage switch MP13 and MP14 crashed. Therefore, when the load is light load and the power supply voltage VHH is at a high voltage of 21 volts, the first medium voltage switch MP11~MP14 will not collapse, so the high voltage The power supply unit 300 can operate normally.
另一情況是,倘若高壓電源裝置300的輸出端OT所接的負載(未繪示)為重載且輸入中壓開關MN1基於控制信號CRS而被導通時,第三中壓開關MN2~MN4可分別反應於輸入偏壓電壓Vsp(為5伏特)、第二偏壓電壓VG21(為11伏特)及第二偏壓電壓VG22(為17伏特)而被導通。此時,第一偏壓電壓VG1為15伏特(即VHH-6×|Vtp|),因此第一中壓開關MP11~MP14可依序被導通。由於負載為重載,故第一中壓開關MP12的源極端(即二極體DM1的陽極端)被下拉至16伏特,第一中壓開關MP13的源極端(即二極體DM2的陽極端)的電壓被下拉至11伏特,第一中壓開關MP14的源極端的電壓被下拉至6伏特,且輸出端OT的電壓被下拉至約為0伏特。基於二極體DM1的陰極端的電壓為15伏特,二極體DM1的兩端跨壓(為1伏特)並未大於順向偏壓(為1伏特),故二極體DM1為截止狀態,因此第一偏壓電壓VG3保持在10伏特,而第二中壓開關MP3_1~MP3_11皆維持在導通狀態。另外,基於二極體DM2的陰極端的電壓為10伏特,二極體DM2的兩端跨壓(為1伏特)並未大於順向偏壓(為1伏特),故二極體DM2為截止狀態,因此第一偏壓電壓VG4保持在5伏特,而第二中壓開關MP4_1~MP4_16皆維持在導通狀態。 In another case, if the load (not shown) connected to the output terminal OT of the high voltage power supply device 300 is a heavy load and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third medium voltage switch MN2 to MN4 may be They are turned on in response to the input bias voltage Vsp (which is 5 volts), the second bias voltage VG21 (which is 11 volts), and the second bias voltage VG22 (which is 17 volts). At this time, the first bias voltage VG1 is 15 volts (ie, VHH -6 × | Vtp |), so the first medium voltage switches MP11 to MP14 can be turned on in order. Since the load is heavy, the source terminal of the first medium voltage switch MP12 (ie, the anode end of the diode DM1) is pulled down to 16 volts, the source terminal of the first medium voltage switch MP13 (ie, the anode terminal of the diode DM2) The voltage is pulled down to 11 volts, the voltage at the source terminal of the first medium voltage switch MP14 is pulled down to 6 volts, and the voltage at the output OT is pulled down to about 0 volts. The voltage at the cathode terminal of the diode DM1 is 15 volts, and the voltage across the two ends of the diode DM1 (which is 1 volt) is not greater than the forward bias voltage (1 volt), so the diode DM1 is turned off, so The first bias voltage VG3 is maintained at 10 volts, and the second medium voltage switches MP3_1~MP3_11 are maintained in an on state. In addition, the voltage at the cathode terminal of the diode DM2 is 10 volts, and the voltage across the two ends of the diode DM2 (which is 1 volt) is not greater than the forward bias voltage (1 volt), so the diode DM2 is off. Therefore, the first bias voltage VG4 is maintained at 5 volts, and the second medium voltage switches MP4_1~MP4_16 are maintained in an on state.
如此一來,第一中壓開關MP11的源極端(為21伏特)與閘極端(為15伏特)的跨壓為6伏特,第一中壓開關MP11的源極端與汲極端(為16伏特)的跨壓為5伏特,且第一中壓開關MP11 的閘極端與汲極端的跨壓為1伏特,皆未超過第一中壓開關MP11的崩潰電壓Vbd(為6伏特),故第一中壓開關MP11不會發生崩潰。而第一中壓開關MP12的源極端(為16伏特)與閘極端(為15伏特)的跨壓為1伏特,第一中壓開關MP12的源極端與汲極端(為11伏特)的跨壓為5伏特,且第一中壓開關MP12的閘極端與汲極端的跨壓為4伏特,皆未超過第一中壓開關MP12的崩潰電壓Vbd(為6伏特),故第一中壓開關MP12亦不會發生崩潰。第一中壓開關MP13的源極端(為11伏特)與閘極端(為10伏特)的跨壓為1伏特,第一中壓開關MP13的源極端與汲極端(為6伏特)的跨壓為5伏特,且第一中壓開關MP13的閘極端與汲極端的跨壓為4伏特,皆未超過第一中壓開關MP13的崩潰電壓Vbd(為6伏特),故第一中壓開關MP13亦不會發生崩潰。另外,第一中壓開關MP14的源極端(為6伏特)與閘極端(為5伏特)的跨壓為1伏特,第一中壓開關MP14的源極端與汲極端(為0伏特)的跨壓為6伏特,且第一中壓開關MP14的閘極端與汲極端的跨壓為5伏特,皆未超過第一中壓開關MP14的崩潰電壓Vbd(為6伏特),故第一中壓開關MP14亦不會發生崩潰。由此可知,在負載為重載且電源電壓VHH於21伏特的高壓情況下,第一中壓開關MP11~MP14皆不會發生崩潰,因此高壓電源裝置300可正常運作。 As a result, the voltage across the source terminal (21 volts) and the gate terminal (15 volts) of the first medium voltage switch MP11 is 6 volts, and the source terminal and the 汲 terminal of the first medium voltage switch MP11 (16 volts). The crossover voltage is 5 volts, and the first medium voltage switch MP11 The gate voltage of the gate and the extreme voltage of the gate are 1 volt, which do not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP11, so the first medium voltage switch MP11 does not collapse. The voltage across the source terminal (16 volts) and the gate terminal (15 volts) of the first medium voltage switch MP12 is 1 volt, and the source voltage of the first medium voltage switch MP12 and the 汲 terminal (11 volts) are across the voltage. 5 volts, and the voltage across the gate and the 汲 terminal of the first medium voltage switch MP12 is 4 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP12 (6 volts), so the first medium voltage switch MP12 There will be no collapse. The voltage across the source terminal (11 volts) and the gate terminal (10 volts) of the first medium voltage switch MP13 is 1 volt, and the voltage across the source terminal and the 汲 terminal (6 volts) of the first medium voltage switch MP13 is 5 volts, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP13 is 4 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP13 (6 volts), so the first medium voltage switch MP13 is also There won't be a crash. In addition, the voltage across the source terminal (6 volts) and the gate terminal (5 volts) of the first medium voltage switch MP14 is 1 volt, and the source terminal of the first medium voltage switch MP14 and the 汲 terminal (0 volt) cross The voltage is 6 volts, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP14 is 5 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP14 (6 volts), so the first medium voltage switch MP14 will not crash. It can be seen that, in the case where the load is heavy and the power supply voltage VHH is at a high voltage of 21 volts, the first medium voltage switches MP11 to MP14 do not collapse, and thus the high voltage power supply device 300 can operate normally.
又一情況是,當電源電壓VHH為5伏特、高壓電源裝置300的輸出端OT所接的負載(未繪示)為輕載且輸入中壓開關MN1基於控制信號CRS而被導通時,第三中壓開關MN2~MN4可依序 被導通。此時,第一偏壓電壓VG1透過第一電流源322接到接地電位GND而約為0伏特,偏壓開關串聯組312~314所提供的第一偏壓電壓VG2~VG4透過第二電流源332、333及334接到接地電位GND而皆為0伏特,第一中壓開關MP11~MP14依序被導通,且二極體DM1及DM2亦被導通。基於電源電壓VHH為5伏特,第一偏壓電壓VG1、VG2、VG3、VG4皆為0伏特,且輸出端的電壓為5伏特(由於負載為輕載),因此第一中壓開關MP11~MP14皆不會發生崩潰。可以理解的是,在負載為輕載且電源電壓VHH低至5伏特的情況下,第一中壓開關MP11~MP14仍可分別被導通且不會發生崩潰,因此高壓電源裝置300在低壓5伏特的情況下仍可正常運作。 In another case, when the power supply voltage VHH is 5 volts, the load (not shown) connected to the output terminal OT of the high voltage power supply device 300 is lightly loaded and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third Medium voltage switch MN2~MN4 can be sequentially Being turned on. At this time, the first bias voltage VG1 is connected to the ground potential GND through the first current source 322 and is about 0 volts, and the first bias voltages VG2 VG VG4 provided by the bias switch series groups 312-314 are transmitted through the second current source. 332, 333 and 334 are connected to the ground potential GND and are both 0 volts, the first medium voltage switches MP11~MP14 are sequentially turned on, and the diodes DM1 and DM2 are also turned on. Based on the power supply voltage VHH is 5 volts, the first bias voltages VG1, VG2, VG3, VG4 are 0 volts, and the output voltage is 5 volts (since the load is light load), so the first medium voltage switch MP11~MP14 There won't be a crash. It can be understood that, when the load is light load and the power supply voltage VHH is as low as 5 volts, the first medium voltage switches MP11~MP14 can still be turned on and will not be respectively collapsed, so the high voltage power supply device 300 is at a low voltage of 5 volts. In the case of normal operation.
又一情況是,當電源電壓VHH為5伏特、高壓電源裝置300的輸出端OT所接的負載(未繪示)為重載且輸入中壓開關MN1基於控制信號CRS而被導通時,第三中壓開關MN2~MN4可分別被導通。此時,第一偏壓電壓VG1透過第一電流源322接到接地電位GND而約為0伏特,偏壓開關串聯組312~314所提供的第一偏壓電壓VG2~VG4透過第二電流源332、333及334接到接地電位GND而皆為0伏特,第一中壓開關MP11~MP14依序被導通,而二極體DM1及DM2為截止狀態。基於電源電壓VHH為5伏特,第一偏壓電壓VG1、VG2、VG3、VG4皆為0伏特,且輸出端的電壓為0伏特(由於負載為重載),因此第一中壓開關MP11~MP14皆不會發生崩潰。可以理解的是,在負載為重載且電源電壓VHH 低至5伏特的情況下,第一中壓開關MP11~MP14仍可分別被導通且不會發生崩潰,因此高壓電源裝置300在低壓5伏特的情況下仍可正常運作。 In another case, when the power supply voltage VHH is 5 volts, the load (not shown) connected to the output terminal OT of the high voltage power supply device 300 is a heavy load, and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third The medium voltage switches MN2 to MN4 can be turned on, respectively. At this time, the first bias voltage VG1 is connected to the ground potential GND through the first current source 322 and is about 0 volts, and the first bias voltages VG2 VG VG4 provided by the bias switch series groups 312-314 are transmitted through the second current source. 332, 333 and 334 are connected to the ground potential GND and are both 0 volts, the first medium voltage switches MP11~MP14 are sequentially turned on, and the diodes DM1 and DM2 are turned off. Based on the power supply voltage VHH is 5 volts, the first bias voltages VG1, VG2, VG3, VG4 are 0 volts, and the output voltage is 0 volts (due to the load being heavy), so the first medium voltage switch MP11~MP14 are There won't be a crash. Understandably, the load is heavy and the power supply voltage VHH In the case of as low as 5 volts, the first medium voltage switches MP11 to MP14 can still be turned on without collapse, so that the high voltage power supply device 300 can operate normally at a low voltage of 5 volts.
總的來說,無論負載為輕載或是重載,只要電源電壓VHH是在5伏特至21伏特的電壓範圍內,高壓電源裝置300皆可正常運作。因此高壓電源裝置300可正常運作的電源電壓VHH的範圍以及其輸出電壓的範圍確實可被有效提昇。 In general, the high voltage power supply unit 300 can operate normally as long as the load is light or heavy, as long as the power supply voltage VHH is in the range of 5 volts to 21 volts. Therefore, the range of the power supply voltage VHH in which the high-voltage power supply device 300 can operate normally and the range of its output voltage can be effectively improved.
在本發明的上述實施例中,雖然僅例舉兩顆第一中壓開關(即圖1)、三顆第一中壓開關(即圖2)以及四顆第一中壓開關(即圖3)的實施方式進行說明,但任何所屬技術領域中具有通常知識者當可依據上述圖1~圖3的教示而類推出五顆(含)以上第一中壓開關的實施方式,故在此不再贅述。 In the above embodiment of the present invention, only two first medium voltage switches (ie, FIG. 1), three first medium voltage switches (ie, FIG. 2), and four first medium voltage switches (ie, FIG. 3) are exemplified. The embodiment of the present invention is described, but any one of ordinary skill in the art can introduce five or more first medium voltage switches according to the teachings of FIG. 1 to FIG. 3 above, so Let me repeat.
綜上所述,在本發明實施例的高壓電源裝置中,其內部的中壓開關元件不會因高壓電源裝置操作在高壓的電源電壓下而發生崩潰。此外,藉由本發明實施例的高壓電源裝置的電路設計,可有效提昇高壓電源裝置可正常運作的電源電壓及其輸出電壓的範圍。 In summary, in the high-voltage power supply device of the embodiment of the present invention, the internal medium-voltage switching element does not collapse due to the high-voltage power supply device operating under a high-voltage power supply voltage. In addition, the circuit design of the high voltage power supply device according to the embodiment of the present invention can effectively improve the range of the power supply voltage and the output voltage of the high voltage power supply device that can operate normally.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.
100‧‧‧高壓電源裝置 100‧‧‧High voltage power supply unit
111‧‧‧輔助開關串聯組、第一開關串聯組 111‧‧‧Auxiliary switch series group, first switch series group
112‧‧‧偏壓開關串聯組、第一開關串聯組 112‧‧‧Commutation switch series group, first switch series group
120‧‧‧第二開關串聯組 120‧‧‧Second switch series
130‧‧‧第一電流源 130‧‧‧First current source
140‧‧‧輔助元件 140‧‧‧Auxiliary components
CRS‧‧‧控制信號 CRS‧‧‧ control signal
GND‧‧‧接地電壓 GND‧‧‧ Grounding voltage
MN1‧‧‧輸入中壓開關 MN1‧‧‧Input medium voltage switch
MP11、MP12‧‧‧第一中壓開關 MP11, MP12‧‧‧First Medium Voltage Switch
MP1_1~MP1_6、MP2_1~MP2_6‧‧‧第二中壓開關 MP1_1~MP1_6, MP2_1~MP2_6‧‧‧Second medium voltage switch
OT‧‧‧輸出端 OT‧‧‧ output
R1‧‧‧電阻 R1‧‧‧ resistance
VG1、VG2‧‧‧第一偏壓電壓 VG1, VG2‧‧‧ first bias voltage
VHH‧‧‧電源電壓 VHH‧‧‧Power supply voltage
VP1‧‧‧電壓值 VP1‧‧‧ voltage value
Claims (29)
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US6320414B1 (en) * | 1999-05-14 | 2001-11-20 | U.S. Philips Corporation | High-voltage level tolerant transistor circuit |
US6573752B1 (en) * | 2002-01-03 | 2003-06-03 | Dialog Semiconductor Gmbh | High voltage push-pull driver on standard CMOS |
US20050140420A1 (en) * | 2003-12-30 | 2005-06-30 | Adams Reed W. | Clamping circuit for high-speed low-side driver outputs |
TW200611395A (en) * | 2004-09-30 | 2006-04-01 | Winbond Electronics Corp | High-voltage-tolerant circuit with electrostatic discharge (ESD) protection and esd protection circuit |
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CN100359805C (en) * | 2003-06-30 | 2008-01-02 | 三垦电气株式会社 | Semiconductor switch |
EP2511927B1 (en) * | 2011-04-11 | 2018-08-29 | ABB Schweiz AG | Switch having two sets of contact elements |
CN102957126B (en) * | 2011-08-25 | 2015-04-01 | 原景科技股份有限公司 | High-voltage element circuit and under-voltage lockout circuit thereof |
WO2015005155A1 (en) * | 2013-07-08 | 2015-01-15 | 株式会社村田製作所 | Power conversion circuit, power transmission system, and power conversion system |
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US6320414B1 (en) * | 1999-05-14 | 2001-11-20 | U.S. Philips Corporation | High-voltage level tolerant transistor circuit |
US6573752B1 (en) * | 2002-01-03 | 2003-06-03 | Dialog Semiconductor Gmbh | High voltage push-pull driver on standard CMOS |
US20050140420A1 (en) * | 2003-12-30 | 2005-06-30 | Adams Reed W. | Clamping circuit for high-speed low-side driver outputs |
TW200611395A (en) * | 2004-09-30 | 2006-04-01 | Winbond Electronics Corp | High-voltage-tolerant circuit with electrostatic discharge (ESD) protection and esd protection circuit |
US7755339B2 (en) * | 2006-07-07 | 2010-07-13 | Panasonic Corporation | Regulator with error amplifier having low voltage and high voltage transistors |
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