TWI606693B - High voltage power apparatus - Google Patents

Description

High voltage power supply unit

This invention relates to a high voltage apparatus, and more particularly to a high voltage power supply unit that uses a medium voltage switch to transmit high voltage.

In theory, high voltage switching elements can be used in high voltage devices to enable high voltage devices to provide the high voltages required for the load. However, compared with the medium voltage switching element, the circuit area of the high voltage switching element is generally much larger than the circuit area of the medium voltage switching element, and the on-resistance value of the high voltage switching element is also higher than the on-resistance value of the medium voltage switching element. Big. In addition, the high voltage switching element has a higher critical voltage value, a slower speed, and a more serious matrix effect, resulting in higher cost and lower efficiency of the high voltage device using the high voltage switching element.

Therefore, medium voltage switching elements are widely used in high voltage devices. However, medium voltage switching elements in high voltage devices may not withstand high voltages and collapse. In addition, in the current high-voltage devices using medium-voltage switching elements, the range of internal operating voltage is usually limited, so that the range of the output voltage is limited. Therefore, how to avoid the breakdown of the medium voltage switching element in the high voltage device due to the high voltage, and the range of the operating voltage that can improve the normal operation of the high voltage device, and avoid the voltage range of the output voltage The limitation of the circumference is an important issue in the design of high-voltage devices.

In view of the above, the present invention provides a high-voltage power supply device in which an internal medium-voltage switching element does not collapse due to operation of a high-voltage power supply device under a high-voltage power supply voltage, and can improve a range of a power supply voltage at which a high-voltage power supply device can operate normally. And the range of its output voltage.

The high voltage power supply device of the present invention includes M first medium voltage switches, M first switch series groups, second switch series groups, and L first current sources. The M first medium voltage switches are serially connected in series and connected in series between the power supply voltage and the output of the high voltage power supply device. The M first medium voltage switches are respectively controlled by M first bias voltages to transmit a power supply voltage to the output, where M is an integer greater than or equal to two. The M first switch series groups include an auxiliary switch series group and L bias switch series groups, wherein a first end of each of the M first switch series groups is coupled to a power supply voltage, and the M first switches are connected in series The second end of each of the groups produces one of M first bias voltages, where L = M-1. The second switch series is coupled between the second end of the auxiliary switch series group and the ground voltage. The second switch series is used to limit the current flowing through the series of auxiliary switches, and is controlled to be turned on and off by the control signal, so that the auxiliary switch series group generates a corresponding first bias voltage. Each of the L first current sources is coupled between the second end of one of the L bias switch series groups and the ground voltage to provide a corresponding series operation of the bias switch series The first bias current.

In an embodiment of the invention, the M first switches are connected in series Each of them includes a plurality of second medium voltage switches. The second medium voltage switches are serially connected in series and connected in series between the power supply voltage and the second end of the corresponding first switch series group.

In an embodiment of the present invention, the second medium voltage switches of each of the M first switch series groups are a plurality of transistors, wherein the first stage transistors of the plurality of transistors The source terminal is coupled to the power supply voltage, and the gate terminal of each of the transistors is coupled to the drain terminal and coupled to the source terminal of the next-stage transistor, and the gate of the last-stage transistor in the transistors The terminal is coupled to the second end of the corresponding first switch series, wherein at least a portion of the transistors are shared with each other and coupled to the at least a portion of the transistors a maximum potential, and the number of the at least some of the transistors is determined by the breakdown voltage and the threshold voltage of the transistor.

In an embodiment of the present invention, the second intermediate voltage switches of each of the M first switch series groups are a plurality of diodes, wherein the first two of the two diodes The anode end of the polar body is coupled to the power supply voltage, and the cathode end of each of the diodes is coupled to the anode end of the lower diode, and the last one of the diodes is negative. Extremely coupled to the second end of the corresponding first switch series set.

In an embodiment of the invention, the M first medium voltage switches include a plurality of transistors. The source terminals of the first-stage transistors in the transistors are coupled to a power supply voltage, and the 汲 terminal of each of the transistors is coupled to the source terminal of the lower-level transistor, and the last stage of the transistors The 汲 terminal of the transistor is coupled to the output. The gate terminal of the first-stage transistor of the plurality of transistors is coupled to the second end of the series of auxiliary switches, and the gate terminals of the J-stage transistors of the transistors are coupled to the L-bias The second end of the first series of bias switch switches in the series of voltage switches, wherein J=I+1, and I is a positive integer less than or equal to L.

In an embodiment of the invention, the number of the second medium voltage switches in the series of auxiliary switches is determined by the breakdown voltage of the transistors and the threshold voltage of the transistors. The number of the second intermediate voltage switches of the first pair of bias switches in the series of L bias switches is set by the maximum value of the power supply voltage, the source of the Jth transistor in the transistors The extreme voltage and the threshold voltage of these transistors are determined.

In an embodiment of the invention, the high voltage power supply device further includes an auxiliary component. The auxiliary component is coupled between the source terminal and the gate terminal of the first-stage transistor to assist in controlling the opening and closing operation of the first-stage transistor.

In an embodiment of the invention, the auxiliary component is a resistor or current source.

In an embodiment of the invention, M is an integer greater than two, and the high voltage power supply device further includes W diodes. The anode end of the Xth diode of the W diodes is coupled to the source terminal of the Yth transistor in the transistors, and the cathode end of the Xth diode is coupled to the Yth The 汲 terminal of the Zth second medium voltage switch in the series of bias switches, where W=M-2, Y=X+1, X is a positive integer less than or equal to W, and Z is the maximum value of the power supply voltage The voltage at the source terminal of the Y-th transistor in the transistors and the threshold voltage of the transistors are determined.

In an embodiment of the invention, M is equal to two, and the second series of switches described above includes a resistor and an input medium voltage switch. The first end of the resistor is coupled to the auxiliary switch The second end of the series. The input medium voltage switch is coupled between the second end of the resistor and the ground voltage, and is controlled to open and close by a control signal.

In an embodiment of the invention, the power supply voltage is a positive high voltage, and each of the M first medium voltage switches and each of the second medium voltage switches are P-type gold oxide half field effect transistors. And the input medium voltage switch is an N-type gold oxygen half field effect transistor.

In an embodiment of the invention, the power supply voltage is a negative power high voltage, and each of the M first medium voltage switches and each of the second medium voltage switches are N-type gold-oxygen half field effect transistors. And the input medium voltage switch is a P-type gold oxygen half field effect transistor.

In an embodiment of the invention, M is an integer greater than two, and the second series of switches includes a resistor, L third intermediate voltage switches, a second current source, and an input medium voltage switch. The first end of the resistor is coupled to the second end of the series of auxiliary switches. The first intermediate third intermediate switch to the Lth third intermediate voltage switch of the L third intermediate voltage switches are serially connected in series, and are sequentially connected in series between the second end of the resistor and the first node. The second current source is coupled between the first node and the ground voltage to provide a second bias current required for the auxiliary switch to operate in series. The input medium voltage switch is coupled between the first node and the ground voltage, and is controlled to open and close by the control signal. The third intermediate medium voltage switch of the first stage to the third medium voltage switch of the Wth stage are respectively controlled by the W second bias voltages, and the third intermediate medium voltage switch of the Lth stage is controlled by the input bias voltage to prevent the input. The pressure switch crashes, where W=M-2.

In an embodiment of the invention, the high voltage power supply device further includes a current mirror circuit. The current mirror circuit is configured to receive the input bias voltage and thereby generate W second bias voltages.

In an embodiment of the invention, the current mirror circuit includes a reference circuit and W mapping circuits. The reference circuit is configured to receive the input bias voltage and thereby generate a reference voltage. The W mapping circuits are configured to receive a reference voltage and thereby generate W second bias voltages.

In an embodiment of the invention, the reference circuit includes a third switch series group, a diode, and a fourth switch series group. The third switch series group has at least one fourth medium voltage switch. The at least one fourth medium voltage switch is serially connected in series, and is serially connected between the power supply voltage and the second node, wherein the first intermediate fourth intermediate voltage switch of the at least one fourth medium voltage switch generates a reference voltage. The anode terminal of the diode receives the input bias voltage and the cathode terminal of the diode generates a clamping voltage. The fourth switch series is coupled between the second node and the ground voltage for controlling the input bias voltage and the clamping voltage to provide a third bias current required for the third switch series operation.

In an embodiment of the invention, the at least one fourth medium voltage switch is at least one transistor. a source terminal of the first-stage transistor in the at least one transistor is coupled to a power supply voltage, and a gate terminal of each of the at least one transistor is coupled to the 汲 terminal and coupled to a source terminal of the lower-level transistor And the gate terminal of the last transistor of the at least one transistor is coupled to the 汲 terminal and coupled to the second node, wherein the gate terminal of the first stage transistor generates a reference voltage, and at least a portion of the transistor The substrates are shared with each other and coupled to a highest potential in the at least part of the transistors, and the number of the at least partial transistors is determined by a breakdown voltage and a threshold voltage of the transistors.

In an embodiment of the invention, the number of the at least one fourth medium voltage switch is determined by a minimum value of the power supply voltage and a threshold voltage of the transistors.

In an embodiment of the invention, the fourth switch series group includes a third current source and two fifth medium voltage switches. The first end of the third current source is coupled to the ground voltage. The two fifth medium voltage switches are respectively controlled by the clamping voltage and the input bias voltage. The two fifth medium voltage switches are serially connected in series, and are connected in series between the second node and the second end of the third current source.

In an embodiment of the invention, the Kth stage mapping circuit of the W mapping circuits generates one of the W second bias voltages to control the Kth third intermediate voltage switch, and K is less than Or a positive integer equal to W. The K-th stage mapping circuit described above includes a fifth switch series group and U sixth medium voltage switches. The fifth switch series group has a plurality of seventh medium voltage switches, wherein the seventh medium voltage switches are serially connected in series, and are connected in series between the third node and the ground voltage to generate a corresponding second bias voltage. The first sixth sixth intermediate switch to the sixth sixth intermediate voltage switch of the U sixth intermediate voltage switches are serially connected in series, and are serially connected between the power supply voltage and the third node. The sixth intermediate voltage switch of the first stage reacts with the reference voltage to generate a fourth bias current required for the operation of the fifth switch series group, wherein the number of the sixth sixth medium voltage switches is determined by the maximum value of the power supply voltage, the Kth The second bias voltage of the stage mapping circuit is determined by the breakdown voltage of the U sixth medium voltage switches. The third node of the first stage mapping circuit of the W mapping circuits is further coupled to the cathode end of the diode.

In an embodiment of the invention, M is an integer greater than three, and the high voltage power supply device further includes F sixth switch series groups, wherein F=M-3. Each of the F sixth switch series groups includes a plurality of eighth medium voltage switches and a fourth current source. The eighth medium voltage switches are serially connected in series, and are connected in series with the power supply voltage and the fourth node. between. The fourth current source is coupled between the fourth node and the ground voltage. The number of the eighth intermediate voltage switches of the Hth sixth switch series group in the F sixth switch series group is equal to the number of the Hth bias switch series group in the L bias switch series group The number of second medium voltage switches, where H is a positive integer less than or equal to F.

In an embodiment of the invention, the eighth medium voltage switch is a plurality of transistors, wherein a source terminal of the first stage transistor of the plurality of transistors is coupled to a power supply voltage, and each of the transistors The gate terminal is coupled to the 汲 terminal and coupled to the source terminal of the lower stage transistor, and the gate terminal of the last stage transistor of the plurality of transistors is coupled to the 汲 terminal and coupled to the fourth node, At least a portion of the substrates of the plurality of transistors are shared with each other and coupled to a highest potential of the at least a portion of the plurality of transistors, and the at least a portion of the number of such transistors is determined by a breakdown voltage of the transistor The threshold voltage is determined.

In an embodiment of the present invention, the gate terminal of the sixth intermediate voltage switch of the Vth stage in the Kth stage mapping circuit is coupled to the Tth sixth switch series group of the F sixth switch series groups. The fourth node, where V is an integer less than or equal to U and greater than or equal to two, and T = V-1.

In an embodiment of the invention, the plurality of eighth intermediate voltage switches are a plurality of diodes, wherein the anode ends of the first diodes of the plurality of diodes are coupled to a power supply voltage, and the second The cathode end of each of the pole bodies is coupled to the anode end of the next-stage diode, and the cathode end of the last-stage diode of the two diodes is coupled to the fourth node.

In an embodiment of the invention, the plurality of seventh medium voltage switches are more a transistor, wherein a source terminal of the first-stage transistor of the plurality of transistors is coupled to a ground voltage, and a gate terminal of each of the transistors is coupled to the 汲 terminal and coupled to the next-stage transistor a source terminal, and a gate terminal of the last transistor of the plurality of transistors is coupled to the 汲 terminal and coupled to the third node, wherein at least a portion of the substrates of the transistors are shared with each other and coupled to the The lowest potential of at least some of the transistors is described, and the number of the at least some of the transistors is determined by the breakdown voltage and the threshold voltage of the transistor.

In an embodiment of the present invention, the fifth switch of the first stage mapping circuit of the above-mentioned W mapping circuits is in series with the number of the transistors, and thus the breakdown voltage of the transistors, the transistors The threshold voltage is determined by the input bias voltage. The fifth switch of the Y-th mapping circuit in the above-mentioned W mapping circuits is connected in series with the number of such transistors, and thus the breakdown voltage of the transistors and the second of the X-th mapping circuits in the W mapping circuits The bias voltage is used to determine where X = Y-1 and Y is an integer less than or equal to W and greater than or equal to two.

In an embodiment of the present invention, the plurality of seventh intermediate voltage switches are a plurality of diodes, wherein the cathode ends of the first diodes of the plurality of diodes are coupled to a ground voltage, and the second The anode end of each of the pole bodies is coupled to the cathode end of the next-stage diode, and the anode end of the last-stage diode of the two diodes is coupled to the third node.

In an embodiment of the invention, the power supply voltage is a positive high voltage, M first medium voltage switches, the second medium voltage switches, the at least one fourth medium voltage switch, and the U sixth medium voltage The switch is a P-type gold oxide half field effect transistor, and this L third The medium voltage switch, the input medium voltage switch, the two fifth medium voltage switches, and the seventh medium voltage switch are N-type gold oxygen half field effect transistors.

In an embodiment of the invention, the power supply voltage is a negative power high voltage, the M first medium voltage switches, the second medium voltage switches, the at least one fourth medium voltage switch, and the U sixth medium voltage The switch is an N-type gold-oxygen half-field effect transistor, and the L third medium-voltage switch, the input medium-voltage switch, the two fifth medium-voltage switches, and the seventh medium-voltage switch are P-type gold-oxygen half-field power Crystal.

Based on the above, in the high-voltage power supply device of the embodiment of the invention, the internal medium-voltage switching element thereof does not collapse due to the high-voltage power supply device operating at a high-voltage power supply voltage. In addition, the circuit design of the high voltage power supply device according to the embodiment of the present invention can effectively improve the range of the power supply voltage and the output voltage of the high voltage power supply device that can operate normally.

The above described features and advantages of the invention will be apparent from the following description.

100, 200, 300‧‧‧ high voltage power supply unit

111, 211, 311‧‧‧ first switch series group, auxiliary switch series group

112, 212, 213, 312, 313, 314‧‧‧ first switch series group, bias switch series group

120, 220, 320‧‧‧Second switch series

130, 232, 233, 332, 333, 334‧‧‧ first current source

140, 240, 340‧‧‧ auxiliary components

222, 322‧‧‧ second current source

250, 350‧‧‧ current mirror circuit

251, 351‧‧‧ reference circuit

2513, 3513‧‧‧ third switch series

2514, 3514‧‧‧ fourth switch series

252, 352, 353‧‧‧ mapping circuits

2525, 3535‧‧‧ fifth switch series

359‧‧‧fourth current source

391‧‧‧ sixth switch series

CRS‧‧‧ control signal

DM, DM1, DM2, DP‧‧‧ diode

GND‧‧‧ Grounding voltage

I251‧‧‧ third current source

MN1‧‧‧Input medium voltage switch

MN2, MN3, MN4‧‧‧ third medium voltage switch

MN5_1~MN5_11, MN7_1~MN7_17‧‧‧ seventh medium voltage switch

MNC1, MNC2‧‧‧ fifth medium voltage switch

MP11, MP12, MP13, MP14‧‧‧ first medium voltage switch

MP1_1~MP1_6, MP2_1~MP2_6, MP3_1~MP3_11, MP4_1~MP4_16‧‧‧Second medium voltage switch

MP5_1~MP5_5‧‧‧fourth medium voltage switch

MPC6, MPC61, MPC7‧‧‧ sixth medium voltage switch

MP8_1~MP8_6‧‧‧ eighth medium voltage switch

ND1‧‧‧ first node

ND2‧‧‧ second node

ND31, ND32‧‧‧ third node

ND4‧‧‧ fourth node

OT‧‧‧ output

R1‧‧‧ resistance

VCP‧‧‧ initial clamping voltage

VG1, VG2, VG3, VG4‧‧‧ first bias voltage

VG21, VG22‧‧‧second bias voltage

VG41‧‧‧ bias voltage

VHH‧‧‧Power supply voltage

VP1, VP2, VP3‧‧‧ voltage values

VR‧‧‧reference voltage

VSP‧‧‧ input bias voltage

The following drawings are a part of the specification of the invention, and illustrate the embodiments of the invention

FIG. 1 is a schematic diagram of a circuit architecture of a high voltage power supply device according to an embodiment of the invention.

2 is a circuit diagram of a high voltage power supply device according to another embodiment of the present invention. Schematic diagram of the architecture.

FIG. 3 is a schematic diagram of a circuit architecture of a high voltage power supply device according to still another embodiment of the present invention.

In order to make the content of the present invention easier to understand, the following specific embodiments are examples of the invention that can be implemented. In addition, wherever possible, the same reference numerals in the FIGS.

Referring to FIG. 1 , FIG. 1 is a schematic diagram of a circuit structure of a high voltage power supply device according to an embodiment of the invention. The high voltage power supply device 100 can include two first medium voltage switches MP11 and MP12, two first switch series groups 111 and 112 (hereinafter referred to as auxiliary switch series group 111 and bias switch series group 112), and a second switch series group. 120 and a first current source 130, but are not limited thereto. It is worth mentioning that the number of the first switch series groups configured by the present invention is equal to the number of the first medium voltage switches. Furthermore, the number L of first current sources is associated with the number M of first medium voltage switches, where L = M-1. The first medium voltage switch MP11 and the MP12 are serially connected in series, and are connected in series between the power supply voltage VHH and the output terminal OT of the high voltage power supply device 100. The first medium voltage switches MP11 and MP12 may be controlled by the first bias voltages VG1 and VG2, respectively, to transmit the power supply voltage VHH to the output terminal OT.

The first end of the auxiliary switch series group 111 and the first end of the bias switch series group 112 are coupled to the power supply voltage VHH. The second end of the auxiliary switch series group 111 can be produced A first bias voltage VG1 is generated, and a second terminal of the bias switch series group 112 can generate a first bias voltage VG2.

The second switch series group 120 is coupled between the second end of the auxiliary switch series group 111 and the ground voltage GND. The second switch series 120 can be used to limit the current flowing through the auxiliary switch series 111 and is controlled to be turned on and off by the control signal CRS, causing the auxiliary switch series 111 to generate the first bias voltage VG1.

The first current source 130 is coupled between the second end of the bias switch series group 112 and the ground voltage GND to provide a first bias current required for the bias switch series 112 to operate.

Furthermore, the auxiliary switch series group 111 may include a plurality of second medium voltage switches MP1_1~MP1_6, wherein the second medium voltage switches MP1_1~MP1_6 are serially connected in series, and are connected in series with the power supply voltage VHH and the auxiliary switch series group 111. Between the second ends. The bias switch series group 112 may include a plurality of second medium voltage switches MP2_1~MP2_6, wherein the second medium voltage switches MP2_1~MP2_6 are serially connected in series, and are serially connected in the power supply voltage VHH and the second of the bias switch series group 112. Between the ends.

In the embodiment shown in FIG. 1 , the second medium voltage switches MP1_1 MP MP1_6 of the auxiliary switch series group 111 can be a transistor, but the invention is not limited thereto. The source terminal of the first-stage transistor (ie, the second medium-voltage switch MP1_1) is coupled to the power supply voltage VHH. The gate terminal of the first stage transistor (ie, the second medium voltage switch MP1_1) is coupled to the 汲 terminal and coupled to the source terminal of the next stage transistor (ie, the second medium voltage switch MP1_2). The coupling of the remaining transistors can be deduced by analogy. The gate terminal of the last stage transistor (ie, the second medium voltage switch MP1_6) is coupled to the 汲 terminal and coupled to the auxiliary opening. The second end of the series group 111 is closed. Similarly, the second intermediate voltage switches MP2_1~MP2_6 of the bias switch series group 112 can be a transistor, and the coupling manner can be similarly obtained by referring to the coupling manner of the second medium voltage switch MP1_1~MP1_6 for the transistor. Therefore, it will not be repeated here. It is worth mentioning that, in the second medium voltage switches MP1_1~MP1_6 and MP2_1~MP2_6 shown in FIG. 1, the base of each transistor is coupled to its own source terminal, but the invention is not limited thereto. In another embodiment of the present invention, in order to save circuit area, the auxiliary switch series group 111 and the second medium voltage switches MP1_1~MP1_6 and MP2_1~MP2_6 of the bias switch series group 112 may share a base body, in particular, The number of the shared second medium voltage switches may be at least two, and the maximum number may be determined by the breakdown voltage and the threshold voltage of the second medium voltage switch, that is, the breakdown voltage is divided by the threshold voltage ( If it is not possible to divisible, the unconditional carry can be taken for the quotient to obtain the above-mentioned maximum number). For example, if the breakdown voltage of the second medium voltage switch is 6 volts and the threshold voltage is 1 volt, then at most 6 second medium voltage switches can share a base body, so the second medium voltage switch MP1_1~MP1_6 can A base body is shared, and the shared base body is coupled to the highest voltage of the second medium voltage switches MP1_1 MP MP1_6 (ie, the source terminal of the second medium voltage switch MP1_1, that is, the power supply voltage VHH). Similarly, the second medium voltage switches MP2_1~MP2_6 can share a base body, and the common base body is coupled to the highest voltage of the second medium voltage switches MP2_1~MP2_6 (ie, the source terminal of the second medium voltage switch MP2_1, that is, the power source). Voltage VHH). It should be noted that the breakdown voltage of the second medium voltage switch in the above example is 6 volts, and the threshold voltage is 1 volt, which is merely illustrative and is not intended to limit the present invention.

In other embodiments of the present invention, the second medium voltage switches MP1_1~MP1_6 of the auxiliary switch series group 111 can be implemented by using a diode, but the invention is not limited thereto. The anode end of the first-stage diode (ie, the second medium-voltage switch MP1_1) is coupled to the power supply voltage VHH. The cathode end of the first-stage diode (ie, the second medium-voltage switch MP1_1) is coupled to the anode terminal of the next-stage diode (ie, the second medium-voltage switch MP1_2). The coupling of the remaining diodes can be deduced by analogy. The cathode end of the last diode (ie, the second medium voltage switch MP1_6) may be coupled to the second end of the auxiliary switch series group 111. Similarly, the second medium voltage switches MP2_1~MP2_6 of the bias switch series group 112 can be implemented by using a diode. The coupling mode can refer to the second medium voltage switch MP1_1~MP1_6 as a coupling mode of the diode. And analogy, so I won't go into details here.

In the embodiment shown in FIG. 1, the first medium voltage switches MP11 and MP12 may be transistors. The source terminal of the first stage transistor (ie, the first medium voltage switch MP11) is coupled to the power supply voltage VHH. The 汲 terminal of the first stage transistor (ie, the first medium voltage switch MP11) is coupled to the source terminal of the last stage transistor (ie, the first medium voltage switch MP12). The 汲 terminal of the last stage transistor (ie, the first medium voltage switch MP12) is coupled to the output terminal OT. The gate terminal of the first stage transistor (ie, the first medium voltage switch MP11) is coupled to the second end of the auxiliary switch series group 111 to receive the first bias voltage VG1, and the last stage transistor (ie, the first medium voltage switch) The gate terminal of MP12) is coupled to the second terminal of the bias switch series group 112 to receive the first bias voltage VG2.

In the embodiment shown in FIG. 1, the high voltage power supply unit 100 may further include an auxiliary component 140. The auxiliary component 140 is coupled between the source terminal and the gate terminal of the first-stage transistor (ie, the first medium-voltage switch MP11) to assist in controlling the first-stage transistor (ie, the first The opening and closing operation of the medium voltage switch MP11). In an embodiment of the invention, the auxiliary component 140 may be a resistor, but the invention is not limited thereto. In other embodiments of the invention, the auxiliary component 140 can be a current source or any component that can assist in controlling the opening and closing operation of the first stage transistor (ie, the first medium voltage switch MP11).

In the embodiment shown in FIG. 1, the second switch series set 120 can include a resistor R1 and an input medium voltage switch MN1. The first end of the resistor R1 is coupled to the second end of the auxiliary switch series group 111. The input medium voltage switch MN1 is coupled between the second end of the resistor R1 and the ground voltage GND, and is controlled to open and close by the control signal CRS.

In the embodiment shown in FIG. 1, the power supply voltage VHH can be a positive high voltage, and the first medium voltage switches MP11 and MP12 and the second medium voltage switches MP1_1~MP1_6 and MP2_1~MP2_6 can be P-type gold-oxygen half-field power. The crystal, and the input medium voltage switch MN1 can be an N-type gold oxide half field effect transistor. As such, the high voltage power supply device 100 can provide a positive output voltage to the output terminal OT based on the control signal CRS. However, the invention is not limited thereto.

In other embodiments of the present invention, the power supply voltage VHH of FIG. 1 may be a negative power high voltage, and the first medium voltage switches MP11 and MP12 and the second medium voltage switches MP1_1 MP1_6 and MP2_1~MP2_6 may be more N-type gold oxygen half fields. The utility model has an input transistor, and the input medium voltage switch MN1 can be changed to a P-type gold-oxygen half field effect transistor. In this way, the high voltage power supply device 100 of FIG. 1 can provide a negative output voltage to the output terminal OT based on the control signal CRS.

It is worth mentioning that in order to avoid the collapse of the first medium voltage switch MP11 and MP12 and the input medium voltage switch MN1 due to the high voltage of the power supply voltage VHH, The number of second medium voltage switches MP1_1~MP1_6 in the helper switch series group 111 and the number of second medium voltage switches MP2_1~MP2_6 in the bias switch series group 112 must be carefully designed.

For example, the following assumes the breakdown voltage of the P-type MOS field-effect transistor of FIG. 1 (ie, the first medium voltage switch MP11 and MP12 and the second medium voltage switch MP1_1~MP1_6 and MP2_1~MP2_6). Vbd) is 6 volts, and the threshold voltage (hereinafter referred to as Vtp) is -1 volt. The maximum value of the power supply voltage VHH (hereinafter referred to as VHHmax) can be set at 11 volts, and the minimum value of the power supply voltage VHH (below) Said VHHmin) can be set at 1 volt. In addition, in the case where the power supply voltage VHH is 11 volts, in order to avoid a collapse between the source terminal and the 汲 terminal of the first medium voltage switch MP11, the voltage value VP1 of the source terminal of the first medium voltage switch MP12 can be set at 6 volts. (minimum). In the above situation, the number of the second medium voltage switches MP1_1~MP1_6 will be determined by the breakdown voltage Vbd and the threshold voltage Vtp, for example, as shown in the following formula (1), wherein S1 is the number of the second medium voltage switches MP1_1~MP1_6, The number is 6. The number of the second medium voltage switches MP2_1~MP2_6 is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP1 of the source terminal of the first medium voltage switch MP12, and the threshold voltage Vtp, for example, as shown in the following formula (2), wherein S2 is the number of the second medium voltage switches MP2_1~MP2_6, and the number is 6. Incidentally, if the calculation result according to the formulas (1) and (2) has a decimal number, the calculation result may be unconditionally carried to obtain the quantity.

S 1= Vbd ÷| Vtp | (1)

S 2=( VHH max- VP 1- Vtp )÷| Vtp | (2)

In the above scenario, when the power supply voltage VHH is 11 volts, the load (not shown) connected to the output terminal OT of the high voltage power supply device 100 is lightly loaded and the input medium voltage switch MN1 is turned on based on the control signal CRS, first The bias voltages VG1 and VG2 are both 5 volts (ie, VHH -6 × | Vtp |), causing the first medium voltage switches MP11 and MP12 to be turned on, respectively. Since the load is lightly loaded, the voltage at the source terminal of the first medium voltage switch MP12 is 11 volts, and the voltage at the output terminal is also 11 volts. In this way, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP11 is 6 volts, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP11 is 0 volt, and the first medium voltage switch MP11 The gate voltage of the gate terminal and the 汲 terminal is 6 volts, and the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP11 is not exceeded, so that the first medium voltage switch MP11 does not collapse. In addition, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP12 is 6 volts, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP12 is 0 volt, and the gate terminal of the first medium voltage switch MP12 The crossover voltage with the 汲 extreme is 6 volts, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP12, so the first medium voltage switch MP12 does not collapse. When the load is lightly loaded and the power supply voltage VHH is at a high voltage of 11 volts, the first medium voltage switches MP11 and MP12 do not collapse, and thus the high voltage power supply device 100 can operate normally.

In another case, when the power supply voltage VHH is 11 volts, the load (not shown) connected to the output terminal OT of the high voltage power supply device 100 is a heavy load and the input medium voltage switch MN1 is turned on based on the control signal CRS, first The bias voltages VG1 and VG2 are both 5 volts (ie, VHH -6 × | Vp |), causing the first medium voltage switches MP11 and MP12 to be turned on, respectively. Since the load is heavy, the voltage at the source terminal of the first medium voltage switch MP12 is pulled down to 6 volts, and the voltage at the output is pulled down to about 0 volts. In this way, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP11 is 6 volts, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP11 is 5 volts, and the first medium voltage switch MP11 The crossover voltage of the gate extreme and the 汲 extreme is 1 volt, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP11, so the first medium voltage switch MP11 does not collapse. In addition, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP12 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP12 is 6 volts, and the gate terminal of the first medium voltage switch MP12 The crossover voltage with the 汲 extreme is 5 volts, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP12, so the first medium voltage switch MP12 does not collapse. When the load is heavy and the power supply voltage VHH is at a high voltage of 11 volts, the first medium voltage switches MP11 and MP12 do not collapse, and thus the high voltage power supply device 100 can operate normally.

In another case, when the power supply voltage VHH is 1 volt, the load (not shown) connected to the output terminal OT of the high voltage power supply device 100 is lightly loaded and the input medium voltage switch MN1 is turned on based on the control signal CRS, first The bias voltage VG1 is pulled down to the potential of the ground voltage GND (ie, 0 volts) because the input medium voltage switch MN1 is in an on state, and the first bias voltage VG2 is 0 because the first current source 130 is coupled to the ground voltage GND. Volts, so that the first medium voltage switches MP11 and MP12 can be turned on, respectively. Since the load is lightly loaded, the voltage at the source terminal of the first medium voltage switch MP12 is 1 volt, and the voltage at the output terminal is also 1 volt. In this way, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP11 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP11 is 0 volt, and the first medium voltage switch MP11 brake The extreme voltage between the extreme and the extreme is 1 volt, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP11, so the first medium voltage switch MP11 does not collapse. In addition, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP12 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP12 is 0 volt, and the gate terminal of the first medium voltage switch MP12 The crossover voltage with the 汲 extreme is 1 volt, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP12, so the first medium voltage switch MP12 does not collapse. In the case where the load is lightly loaded and the power supply voltage VHH is as low as 1 volt, the first medium voltage switches MP11 and MP12 can still be turned on, respectively, so that the high voltage power supply device 100 can still operate normally under low voltage conditions.

In another case, when the power supply voltage VHH is 1 volt, the load (not shown) connected to the output terminal OT of the high voltage power supply device 100 is a heavy load and the input medium voltage switch MN1 is turned on based on the control signal CRS, first The bias voltage VG1 is pulled down to the potential of the ground voltage GND (ie, 0 volts) because the input medium voltage switch MN1 is in an on state, and the first bias voltage VG2 is 0 because the first current source 130 is coupled to the ground voltage GND. Volts cause the first medium voltage switches MP11 and MP12 to be turned on, respectively, and the voltage at the source terminal of the first medium voltage switch MP12 is clamped at 1 volt. Since the load is heavily loaded, the voltage at the output is pulled down to approximately 0 volts. In this way, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP11 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP11 is 0 volt, and the first medium voltage switch MP11 The crossover voltage of the gate extreme and the 汲 extreme is 1 volt, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP11, so the first medium voltage switch MP11 does not collapse. In addition, the source terminal and the gate of the first medium voltage switch MP12 The voltage across the terminal is 1 volt, the voltage between the source terminal and the 汲 terminal of the first medium voltage switch MP12 is 1 volt, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP12 is 0 volt, which does not exceed the first The breakdown voltage Vbd (6 volts) of a medium voltage switch MP12 does not cause the first medium voltage switch MP12 to collapse. In the case where the load is heavy and the power supply voltage VHH is as low as 1 volt, the first medium voltage switches MP11 and MP12 can still be turned on, respectively, so that the high voltage power supply device 100 can still operate normally under low voltage conditions.

In general, the high voltage power supply unit 100 can operate normally as long as the load is light or heavy, as long as the power supply voltage VHH is in the range of 1 volt to 11 volts. Therefore, the range of the power supply voltage VHH in which the high-voltage power supply device 100 can operate normally and the range of its output voltage can be effectively improved.

Referring to FIG. 2, FIG. 2 is a schematic diagram of a circuit structure of a high voltage power supply device according to another embodiment of the present invention. The high voltage power supply device 200 may include three first medium voltage switches MP11, MP12 and MP13, three first switch series groups 211, 212, 213 (hereinafter referred to as: auxiliary switch series group 211, bias switch series group 212, partial bias) The pressure switch series group 213), the second switch series group 220, the two first current sources 232, 233, the auxiliary element 240, the diode DM, and the current mirror circuit 250 are not limited thereto. It is worth mentioning that the number of the first switch series groups configured by the present invention is equal to the number of the first medium voltage switches. Furthermore, the number L of the first current source and the number W of the diodes are all associated with the number M of the first medium voltage switches, where L=M-1, W=M-2. The first medium voltage switches MP11, MP12 and MP13 are serially connected in series, and are connected in series between the power supply voltage VHH and the output terminal OT of the high voltage power supply device 200. First medium pressure open The off MP11, MP12, MP13 can be controlled by the first bias voltages VG1, VG2, and VG3, respectively, to transmit the power supply voltage VHH to the output terminal OT.

The first end of the auxiliary switch series group 211 and the first end of the bias switch series group 212, 213 are coupled to the power supply voltage VHH. The second terminal of the auxiliary switch series group 211 generates a first bias voltage VG1, and the second ends of the bias switch series groups 212, 213 respectively generate first bias voltages VG2, VG3.

The second switch series group 220 is coupled between the second end of the auxiliary switch series group 211 and the ground voltage GND. The second switch series group 220 is used to limit the current flowing through the auxiliary switch series group 211, and is controlled to be turned on and off by the control signal CRS, so that the auxiliary switch series group 211 generates the first bias voltage VG1.

The first current sources 232 and 233 are respectively coupled between the second ends of the bias switch series groups 212 and 213 and the ground voltage GND to respectively provide the first bias currents required for the operation of the bias switch series groups 212 and 213 respectively. .

The internal structure and implementation of the auxiliary switch series group 211 are similar to the auxiliary switch series group 111 of FIG. 1 , so the above related description may be referred to, and details are not described herein again. In addition, the internal architecture and implementation of the bias switch series 212 are similar to the bias switch series 112 of FIG. 1 , so the above related description may be referred to, and details are not described herein again. Hereinafter, only the bias switch series group 213 will be described.

The bias switch series group 213 may include a plurality of second medium voltage switches MP3_1~MP3_11, wherein the second medium voltage switches MP3_1~MP3_11 are serially connected in series, and are serially connected in the power supply voltage VHH and the second of the bias switch series group 213 Between the ends. In the embodiment shown in FIG. 2, the second medium voltage switch of the bias switch series group 213 MP3_1~MP3_11 may be a transistor, but the invention is not limited thereto. The source terminal of the first-stage transistor (ie, the second medium-voltage switch MP3_1) is coupled to the power supply voltage VHH. The gate terminal of the first stage transistor (ie, the second medium voltage switch MP3_1) is coupled to the 汲 terminal and coupled to the source terminal of the next stage transistor (ie, the second medium voltage switch MP3_2). The coupling of the remaining transistors can be deduced by analogy. The gate terminal of the last stage transistor (ie, the second medium voltage switch MP3_11) is coupled to the 汲 terminal and coupled to the second end of the bias switch series group 213.

It is worth mentioning that in the second medium voltage switches MP3_1~MP3_11 shown in FIG. 2, the base of each transistor can be coupled to its own source terminal, but the invention is not limited thereto. In another embodiment of the present invention, in order to save circuit area, the second medium voltage switches MP3_1~MP3_11 of the bias switch series group 213 can share a base body. In particular, the number of second medium voltage switches that can be shared can be At least two, and at most the number can be determined by the breakdown voltage and the threshold voltage of the second medium voltage switch, that is, the breakdown voltage is divided by the threshold voltage (if it is impossible to divisible, the quotient can be unconditionally carried to obtain the above-mentioned maximum number). For example, if the breakdown voltage of the second medium voltage switch is 6 volts and the threshold voltage is 1 volt, then at most 6 second medium voltage switches can share a base body, so the second medium voltage switch MP3_1~MP3_6 can A base body is shared, and the shared base body is coupled to the highest voltage of the second medium voltage switches MP3_1 MP MP3_6 (ie, the source terminal of the second medium voltage switch MP3_1, that is, the power supply voltage VHH). Similarly, the second medium voltage switches MP3_7~MP3_11 can share a base body, and the common base body is coupled to the highest voltage of the second medium voltage switches MP3_7~MP3_11 (ie, the source terminal of the second medium voltage switch MP3_7). The second medium voltage switch in the above example The breakdown voltage is 6 volts and the threshold voltage of 1 volt is merely illustrative and is not intended to limit the invention.

In other embodiments of the present invention, the second medium voltage switches MP3_1~MP3_11 of the bias switch series group 213 can be implemented by using a diode. For the coupling manner, refer to the second medium voltage switch MP1_1~ of FIG. MP1_6 is analogous to the coupling mode of the diodes, so it will not be described here.

In the embodiment shown in FIG. 2, the first medium voltage switches MP11, MP12, and MP13 may be transistors, but the invention is not limited thereto. The source terminal of the first stage transistor (ie, the first medium voltage switch MP11) is coupled to the power supply voltage VHH. The 汲 terminal of the first stage transistor (ie, the first medium voltage switch MP11) is coupled to the source terminal of the next stage transistor (ie, the first medium voltage switch MP12). The 汲 terminal of the second stage transistor (ie, the first medium voltage switch MP12) is coupled to the source terminal of the next stage transistor (ie, the first medium voltage switch MP13). The 汲 terminal of the last stage transistor (ie, the first medium voltage switch MP13) is coupled to the output terminal OT. The gate terminal of the first stage transistor (ie, the first medium voltage switch MP11) is coupled to the second end of the auxiliary switch series group 211 to receive the first bias voltage VG1, and the second stage transistor (ie, the first medium voltage switch) The gate terminal of the MP12) is coupled to the second terminal of the bias switch series group 212 to receive the first bias voltage VG2, and the gate terminal of the last stage transistor (ie, the first medium voltage switch MP13) is coupled to the bias switch The second end of the series set 213 is to receive the first bias voltage VG3. In addition, the auxiliary component 240 is coupled between the source terminal and the gate terminal of the first-stage transistor (ie, the first medium-voltage switch MP11). The implementation and operation of the auxiliary component 240 are similar to the auxiliary component 140 of FIG. Regardless of the above relevant description, we will not repeat them.

In the embodiment shown in FIG. 2, in order to avoid the collapse of the first medium voltage switch MP13, the diode DM is disposed, wherein the anode end of the diode DM is coupled to the source terminal of the first medium voltage switch MP12, and The cathode end of the diode DM is coupled to the 汲 terminal of the second medium voltage switch MP3_6 of the bias switch series group 213. The configuration position of the diode DM will be described in detail later.

In the embodiment shown in FIG. 2, the second switch series set 220 can include a resistor R1, two third medium voltage switches MN2, MN3, an input medium voltage switch MN1, and a second current source 222. The first end of the resistor R1 is coupled to the second end of the auxiliary switch series group 211. The third medium voltage switch MN3 and the third medium voltage switch MN2 are serially connected in series, and are connected in series between the second end of the resistor R1 and the first node ND1. The second current source 222 is coupled between the first node ND1 and the ground voltage GND to provide a second bias current required for the auxiliary switch series group 211 to operate. The input medium voltage switch MN1 is coupled between the first node ND1 and the ground voltage GND, and is controlled to open and close by the control signal CRS. It is worth mentioning that the third medium voltage switches MN2 and MN3 are respectively controlled by the input bias voltage VSP and the second bias voltage VG21 to prevent the input medium voltage switch MN1 from collapsing, wherein the input bias voltage VSP can be one. A fixed medium voltage voltage value, for example, 5 volts, but the invention is not limited thereto. It is worth mentioning that the number L of the third medium voltage switches configured by the present invention is related to the number of the first medium voltage switches M, that is, L=M-1.

In the embodiment shown in FIG. 2, the current mirror circuit 250 is operative to receive the input bias voltage VSP and thereby generate a second bias voltage VG21. In detail, the current mirror circuit 250 can include a reference circuit 251 and a mapping circuit 252. Reference circuit The 251 is configured to receive the input bias voltage VSP, and accordingly generate the reference voltage VR and the reference current. The mapping circuit 252 receives the reference voltage VR to map the bias current and accordingly generates the second bias voltage VG21. It is worth mentioning that the number W of mapping circuits configured by the present invention is related to the number of first medium voltage switches M, that is, W=M-2.

Still further, the reference circuit 251 can include a third switch series group 2513, a diode DP, and a fourth switch series group 2514. The third switch series group 2513 includes a fourth medium voltage switch MP5_1. The fourth medium voltage switch MP5_1 is connected in series between the power supply voltage VHH and the second node ND2, and generates a reference voltage VR. In the embodiment of FIG. 2, the fourth medium voltage switch MP5_1 can be a transistor, wherein a source terminal of the transistor is coupled to the power supply voltage VHH, and a gate terminal of the transistor is coupled to the 汲 terminal and coupled to the second node. ND2.

The anode terminal of the diode DP receives the input bias voltage VSP, and the cathode terminal of the diode DP generates the initial clamp voltage VCP. The fourth switch series group 2514 is coupled between the second node ND2 and the ground voltage GND, and is controlled by the input bias voltage VSP and the initial clamp voltage VCP to provide a third bias required for the third switch series group 2513 to operate. Current. In detail, the fourth switch series group including 2514 may include a third current source I251 and two fifth medium voltage switches MNC1, MNC2. The first end of the third current source I251 is coupled to the ground voltage GND. The fifth medium voltage switch MNC2 and the fifth medium voltage switch MNC1 are controlled by the initial clamp voltage VCP and the input bias voltage VSP, respectively. The fifth medium voltage switch MNC2 and the fifth medium voltage switch MNC1 are serially connected in series, and are connected in series between the second node ND2 and the second end of the third current source I251.

The mapping circuit 252 can include a fifth switch series group 2525 and a sixth Medium voltage switch MPC6. The fifth switch series group 2525 has a plurality of seventh medium voltage switches MN5_1~MN5_11. The seventh medium voltage switches MN5_1~MN5_11 are serially connected in series, and are connected in series between the third node ND31 and the ground voltage GND to generate a second bias voltage VG21. The sixth medium voltage switch MPC6 is coupled between the power supply voltage VHH and the third node ND31, and reacts with the reference voltage VR to generate a fourth bias current required for the fifth switch series group 2525 to operate.

In particular, the third node ND31 of the mapping circuit 252 is further coupled to the cathode end of the diode DP, so that after the power supply voltage VHH is pulled up to a high voltage, the second intermediate voltage switch MN5_1~MN5_11 generates a second The bias voltage VG21 can replace the initial clamp voltage VCP to control the fifth medium voltage switch MNC2, thereby preventing the fifth medium voltage switch MNC1 from collapsing. A detailed description will be given later.

In the embodiment shown in FIG. 2, the seventh medium voltage switch MN5_1~MN5_11 may be a transistor, but the invention is not limited thereto. The source terminal of the first-stage transistor (ie, the seventh medium-voltage switch MN5_11) is coupled to the ground voltage GND. The gate terminal of the first stage transistor (ie, the seventh medium voltage switch MN5_11) is coupled to the drain terminal and coupled to the source terminal of the next stage transistor (ie, the seventh medium voltage switch MN5_10). The coupling of the remaining transistors can be deduced by analogy. The gate terminal of the last stage transistor (ie, the seventh medium voltage switch MN5_1) is coupled to the 汲 terminal and coupled to the third node ND31. It is worth mentioning that in the seventh medium voltage switch MN5_1~MN5_11 shown in FIG. 2, the base of each transistor can be coupled to its own source terminal, but the invention is not limited thereto. In another embodiment of the present invention, in order to save circuit area, the seventh medium voltage switches MN5~MN5_11 may share a base body, and in particular, the number of seventh medium voltage switches that can be shared may be There are two fewer, and at most the number can be determined by the breakdown voltage and the threshold voltage of the seventh medium voltage switch, that is, the breakdown voltage is divided by the threshold voltage (if the divisible is not possible, the quotient can be unconditionally carried to obtain the above-mentioned maximum number) . For example, if the breakdown voltage of the seventh medium voltage switch is 6 volts and the threshold voltage is 1 volt, then at most 6 seventh medium voltage switches can share a base body, so the seventh medium voltage switch MN5_1~MN5_6 can Sharing a substrate, and the shared base is coupled to the lowest voltage of the seventh medium voltage switches MN5_1~MN5_6 (ie, the source terminal of the seventh medium voltage switch MN5_6. Similarly, the seventh medium voltage switches MN5_7~MN5_11 can share a base body. And the shared base body is coupled to the lowest voltage of the seventh medium voltage switch MN5_7~MN5_11 (ie, the source terminal of the seventh medium voltage switch MN5_11, that is, the ground voltage GND). The collapse of the seventh medium voltage switch in the above example The voltage is 6 volts and the threshold voltage of 1 volt is merely illustrative and is not intended to limit the invention.

In other embodiments of the present invention, the seventh medium voltage switch MN5_1~MN5_11 can be implemented by using a diode, but the invention is not limited thereto. The cathode end of the first diode (ie, the seventh medium voltage switch MN5_11) is coupled to the ground voltage GND. The anode end of the first-stage diode (ie, the seventh medium voltage switch MN5_11) is coupled to the cathode end of the next-stage diode (ie, the second medium-voltage switch MN5_10). The coupling of the remaining diodes can be deduced by analogy. The anode end of the last diode (ie, the second medium voltage switch MN5_1) may be coupled to the third node ND31.

In the embodiment shown in FIG. 2, the power supply voltage VHH can be a positive high voltage; the first medium voltage switch MP11~MP13, the second medium voltage switch MP1_1~MP1_6, MP2_1~MP2_6 and MP3_1~MP3_11, and the fourth medium voltage switch MP5_1 and the first The six medium voltage switch MPC6 can be a P-type gold-oxygen half field effect transistor; and the third medium voltage switch MN2~MN3, the input medium voltage switch MN1, the fifth medium voltage switch MNC1 and MNC5, and the seventh medium voltage switch MN5_1~MN5_11 can be It is an N-type gold oxide half field effect transistor. As such, the high voltage power supply device 200 can provide a positive output voltage to the output terminal OT based on the control signal CRS. However, the invention is not limited thereto.

In other embodiments of the present invention, the power supply voltage VHH of FIG. 2 may be a negative voltage high voltage; the first medium voltage switch MP11~MP13, the second medium voltage switch MP1_1~MP1_6, MP2_1~MP2_6 and MP3_1~MP3_11, and the fourth medium voltage The switch MP5_1 and the sixth medium voltage switch MPC6 can be changed to N-type gold-oxygen half field effect transistors; and the third medium voltage switches MN2 to MN3, the input medium voltage switch MN1, the fifth medium voltage switch MNC1 and MNC5, and the seventh medium voltage The switches MN5_1~MN5_11 can be changed to more P-type gold oxide half field effect transistors. As such, the high voltage power supply device 200 of FIG. 2 can provide a negative output voltage to the output terminal OT based on the control signal CRS.

It is worth mentioning that, in order to prevent the first medium voltage switch MP11~MP13 and the input medium voltage switch MN1 from collapsing due to the high voltage of the power supply voltage VHH, the number of the second medium voltage switches MP1_1~MP1_6 in the auxiliary switch series group 211, The number of the second medium voltage switches MP2_1~MP2_6 in the bias switch series group 212, the number of the second medium voltage switches MP3_1~MP3_11 in the bias switch series group 213, and the coupling position of the diode DM must be carefully designed.

The following assumes that the input bias voltage VSP of FIG. 2 is 5 volts, the forward bias voltage VF of the diode DM and the diode DP is 1 volt, the P-type MOS half-field effect transistor and the N-type MOS half-field effect transistor. Breakdown voltage (hereinafter referred to as Vbd) It is 6 volts, and the threshold voltage (hereinafter referred to as Vtp) of the P-type MOSFET is -1 volt, and the threshold voltage (hereinafter referred to as Vtn) of the N-type MOS half-field transistor is 1 Volt, the maximum value of the power supply voltage VHH (hereinafter referred to as VHHmax) can be set at 16 volts, and the minimum value of the power supply voltage VHH (hereinafter referred to as VHHmin) can be set at 1 volt.

Generally, the input bias voltage VSP and the power supply voltage VHH (approximately the voltage value of the input bias voltage VSP) are usually supplied to the high voltage power supply device 200, so the initial value of the initial clamp voltage VCP is 4 volts (ie, VSP). -VF), and the second bias voltage VG21 is equal to the initial value of the initial clamp voltage VCP of 4 volts. At this time, the input bias voltage VSP (5 volts) and the initial clamp voltage VCP (4 volts) can be used to bias the fifth medium voltage switches MNC1 and MNC2, respectively, so that the reference circuit 251 can generate the reference voltage VR and The current is referenced and the mapping circuit 252 is mapped out of the bias current to complete the precharge operation of the current mirror circuit 250. Then, the power supply voltage VHH can be pulled up (for example, pulled to VHHmax, which is 16 volts) under high voltage application. At this time, the fifth switch series group 2525 will generate a bias voltage VG21 of 11 volts (ie, 11 × Vtn ). And raise the initial clamping voltage VCP from 4 volts to 11 volts. In other words, the bias voltage VG21 at this time not only biases the third medium voltage switch MN3 but also biases the fifth medium voltage switch MNC2. Since the initial clamping voltage VCP rises from 4 volts to 11 volts after the power supply voltage VHH is pulled up to 16 volts, the collapse of the fifth medium voltage switch MNC2 can be avoided.

In addition, in the case where the power supply voltage VHH is 16 volts, in order to avoid a collapse between the source terminal and the 汲 terminal of the first medium voltage switch MP11, the first intermediate voltage The voltage value VP1 of the source terminal of the switch MP12 can be set to 11 volts (minimum value); and in order to avoid a collapse between the source terminal and the 汲 terminal of the first medium voltage switch MP12, the voltage of the source terminal of the first medium voltage switch MP13 The value VP2 can be set at 6 volts (minimum). In the above situation, the number of the second medium voltage switches MP1_1 to MP1_6 is determined by the breakdown voltage Vbd and the threshold voltage Vtp, for example, as shown in the above formula (1), and the number thereof is six. The number of the second medium voltage switches MP2_1 to MP2_6 is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP1 of the source terminal of the first medium voltage switch MP12, and the threshold voltage Vtp, for example, as shown in the above formula (2). The number is six. In addition, the number of the second medium voltage switches MP3_1 to MP3_11 is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP2 of the source terminal of the first medium voltage switch MP13, and the threshold voltage Vtp, for example, as shown in the following formula (3). S3 is the number of the second medium voltage switches MP3_1~MP3_11, and the number is 11. Incidentally, if the calculation result according to the formula (3) has a decimal number, the calculation result may be unconditionally carried to obtain the quantity.

S 3=( VHH max- VP 2- Vtp )÷| Vtp | (3)

It should be particularly noted that the anode end of the diode DM is coupled to the source terminal of the second of the three first medium voltage switches MP11~MP13 (ie, the first medium voltage switch MP12). The cathode end of the diode DM is coupled to the 汲 terminal of the Zth second medium voltage switch of the last one of the bias switch series series 212-213 (ie, the bias switch series group 213), Where Z is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP1 of the source terminal of the first medium voltage switch MP12, and the threshold voltage Vtp to prevent the first medium voltage switch MP13 from collapsing when the load is lightly loaded, for example The following formula (4) is shown. In the present embodiment, Z is 6, so the cathode end of the diode DM is coupled to the 汲 terminal of the sixth second medium voltage switch MP3_6 of the bias switch series group 213. Incidentally, if the calculation result according to the formula (4) has a decimal number, the calculation result may be unconditionally carried to obtain the quantity.

Z =( VHH max- VP 1- Vtp )÷| Vtp | (4)

In addition, the number of the fourth intermediate voltage switches MP5_1 in the third switch series group 2513 of the reference circuit 251 can be determined by the minimum value VHHmin of the power supply voltage VHH and the threshold voltage Vtp, for example, as shown in the following formula (5), wherein S41 is the first The number of four medium voltage switches MP5_1 is one. The number of the seventh medium voltage switches MN5_1 MN MN5_11 of the fifth switch series group 2525 of the mapping circuit 252 can be determined by the breakdown voltage Vbd, the threshold voltage Vtn and the input bias voltage VSP, for example, as shown in the following formula (6). S51 is the number of the seventh medium voltage switches MN5_1~MN5_11, and the number thereof is 11. Incidentally, if the calculation result according to the equations (5) and (6) has a decimal number, the calculation result may be unconditionally carried to obtain the quantity. The operation of the high voltage power supply device 200 will be described below.

S 41= VHH min÷| Vtp | (5)

S 51=( Vbd + Vsp )÷ Vtn (6)

When the supply voltage VHH is 16 volts and the input bias voltage Vsp is 5 volts, the mapping circuit 252 in the current mirror circuit 250 will provide a second bias voltage VG21 of 11 volts (i.e., 11 x Vtn ) with the bias switch connected in series. The first bias voltage VG2 provided by the group 212 is 10 volts (ie, VHH -6×| Vtp |), and the cathode terminal of the diode DM (ie, the 汲 terminal of the second medium voltage switch MP3_6 of the bias switch series group 213) The voltage is 10 volts (i.e., VHH -6 x | Vtp |), and the first bias voltage VG3 provided by the bias switch series group 213 is 5 volts (i.e., VHH -11 × | Vtp |).

In one case, if the load (not shown) connected to the output terminal OT of the high voltage power supply device 200 is lightly loaded and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third medium voltage switch MN2 and the third The medium voltage switch MN3 can be turned on in response to the input bias voltage VSP (which is 5 volts) and the second bias voltage VG21 (which is 11 volts), respectively. At this time, the first bias voltage VG1 is 10 volts (ie, VHH -6 × | Vtp |), so the first medium voltage switches MP11, MP12, and MP13 can be turned on sequentially. Since the load is lightly loaded, the voltage of the source terminal of the first medium voltage switch MP12 (ie, the anode terminal of the diode DM) is 16 volts, the voltage of the source terminal of the first medium voltage switch MP13 is 16 volts, and the output terminal The voltage of the OT is also 16 volts. The voltage at the cathode terminal of the diode DM is 10 volts, and the voltage across the diode DM (6 volts) will be greater than the forward bias of the diode DM (1 volt), so the diode DM will Turned on, causing the voltage at the cathode terminal of the diode DM to be pulled up to 15 volts, so the first bias voltage VG3 is pulled up from 5 volts to 10 volts, and the second medium voltage switches MP3_1~MP3_6 are turned off.

As a result, the voltage across the source terminal (16 volts) and the gate terminal (10 volts) of the first medium voltage switch MP11 is 6 volts, and the source terminal and the 汲 terminal of the first medium voltage switch MP11 (16 volts). The voltage across the voltage is 0 volts, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP11 is 6 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP11 (6 volts), so the first The pressure switch MP11 does not collapse. The source terminal (16 volts) and the gate terminal of the first medium voltage switch MP12 (for 10) The voltage across the volts is 6 volts. The voltage between the source terminal and the 汲 terminal of the first medium voltage switch MP12 (which is 16 volts) is 0 volt, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP12 is 6 volts, none of which exceeds the breakdown voltage Vbd of the first medium voltage switch MP12 (6 volts), so the first medium voltage switch MP12 does not collapse. In addition, the voltage across the source terminal (16 volts) and the gate terminal (10 volts) of the first medium voltage switch MP13 is 6 volts, and the source terminal of the first medium voltage switch MP13 and the 汲 terminal (16 volts) are crossed. The voltage is 0 volt, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP13 is 6 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP13 (6 volts), so the first medium voltage switch MP13 will not crash.

It can be understood that since the diode DM can be turned on when the load is light load, the first bias voltage VG3 is pulled up from 5 volts to 10 volts, thereby preventing the first medium voltage switch MP13 from collapsing. Therefore, in the case where the load is light load and the power supply voltage VHH is at a high voltage of 16 volts, the first medium voltage switches MP11, MP12, and MP13 do not collapse, and thus the high voltage power supply device 200 can operate normally.

In another case, if the load (not shown) connected to the output terminal OT of the high voltage power supply device 200 is a heavy load and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third medium voltage switch MN2 and the third The medium voltage switch MN3 can be turned on in response to the input bias voltage VSP (which is 5 volts) and the second bias voltage VG21 (which is 11 volts), respectively. At this time, the first bias voltage VG1 is 10 volts (ie, VHH -6 × | Vtp |), so the first medium voltage switches MP11, MP12, and MP13 can be turned on sequentially. Since the load is heavy, the source terminal of the first medium voltage switch MP12 (ie, the anode terminal of the diode DM) is pulled down to 11 volts, and the voltage at the source terminal of the first medium voltage switch MP13 is pulled down to 6 volts, and The voltage at the output OT is pulled down to approximately 0 volts. The voltage at the cathode terminal of the diode DM is 10 volts, and the voltage across the two ends of the diode DM (which is 1 volt) is not greater than the forward bias voltage (1 volt), so the diode DM is off state, so The first bias voltage VG3 is maintained at 5 volts, and the second medium voltage switches MP3_1~MP3_11 are maintained in an on state.

As a result, the source voltage of the first medium voltage switch MP11 (16 volts) and the gate terminal (10 volts) are 6 volts across, and the source terminal and the 汲 terminal of the first medium voltage switch MP11 (11 volts). The voltage across the voltage is 5 volts, and the voltage across the gate and the drain of the first medium voltage switch MP11 is 1 volt, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP11 (6 volts), so the first The pressure switch MP11 does not collapse. The voltage across the source terminal (11 volts) and the gate terminal (10 volts) of the first medium voltage switch MP12 is 1 volt, and the source voltage of the first medium voltage switch MP12 and the voltage extreme of the 汲 terminal (6 volts) 5 volts, and the voltage across the gate and the 汲 terminal of the first medium voltage switch MP12 is 4 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP12 (6 volts), so the first medium voltage switch MP12 There will be no collapse. In addition, the voltage across the source terminal (6 volts) and the gate terminal (5 volts) of the first medium voltage switch MP13 is 1 volt, and the source terminal of the first medium voltage switch MP13 and the 汲 terminal (0 volt) cross The voltage is 6 volts, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP13 is 5 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP13 (6 volts), so the first medium voltage switch MP13 will not crash. Therefore, when the load is heavy and the power supply voltage VHH is at a high voltage of 16 volts, the first medium voltage switches MP11, MP12, and MP13 do not collapse, and thus the high voltage power supply device 200 It works normally.

In another case, when the power supply voltage VHH is 1 volt, the seventh medium voltage switches MN5_1 MN MN5_11 are in an off state, and the second bias voltage VG21 provided by the mapping circuit 252 in the current mirror circuit 250 is maintained at the initial clamping. The voltage VCP (which is 4 volts), and the first bias voltage VG2 provided by the bias switch series group 212 is 0 volts because the first current source 232 is coupled to the ground voltage GND, and the diode DM is turned off. The first bias voltage VG3 provided by the series of voltage switches 213 is 0 volts due to the current source 233 being connected to GND.

When the load (not shown) connected to the output terminal OT of the high voltage power supply device 200 is lightly loaded and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third medium voltage switch MN2 and the third medium voltage switch MN3 may be They are turned on in response to the input bias voltage VSP (which is 5 volts) and the second bias voltage VG21 (which is 4 volts). At this time, the first bias voltage VG1 is about 0 volt, so the first medium voltage switches MP11, MP12, and MP13 can be turned on sequentially. Since the load is lightly loaded, the voltage of the source terminal of the first medium voltage switch MP12 is 1 volt, the voltage of the source terminal of the first medium voltage switch MP13 is 1 volt, and the voltage at the output terminal is also 1 volt. In this way, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP11 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP11 is 0 volt, and the first medium voltage switch MP11 The crossover voltage of the gate extreme and the 汲 extreme is 1 volt, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP11, so the first medium voltage switch MP11 does not collapse. The voltage across the source terminal and the gate terminal of the first medium voltage switch MP12 is 1 volt, and the voltage between the source terminal and the 汲 terminal of the first medium voltage switch MP12 is 0 volt, and the first intermediate voltage is opened. The gate voltage of the MP12 is 1 volt across the gate terminal and the 汲 terminal, and the voltage Vbd (6 volts) of the first medium voltage switch MP12 is not exceeded, so the first medium voltage switch MP12 does not collapse. In addition, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP13 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP13 is 0 volt, and the gate terminal of the first medium voltage switch MP13 The voltage across the pole of the 汲 is 1 volt, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP13 (6 volts), so the first medium voltage switch MP13 does not collapse. It can be understood that, when the load is light load and the power supply voltage VHH is as low as 1 volt, the first medium voltage switches MP11, MP12 and MP13 can still be respectively turned on, so that the high voltage power supply device 200 can still be under low voltage conditions. working normally.

In addition, when the load (not shown) connected to the output terminal OT of the high voltage power supply device 200 is a heavy load and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third medium voltage switch MN2 and the third medium voltage switch MN3 can be turned on in response to input bias voltage VSP (5 volts) and second bias voltage VG21 (4 volts), respectively. At this time, the first bias voltage VG1 is about 0 volts, so the first medium voltage switches MP11, MP12, and MP13 can be turned on sequentially, and the voltage of the source terminal of the first medium voltage switch MP12 and the first medium voltage switch MP13 The voltage at the source extreme will be clamped at 1 volt. Since the load is heavily loaded, the voltage at the output is pulled down to approximately 0 volts. In this way, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP11 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP11 is 0 volt, and the first medium voltage switch MP11 The voltage across the gate and the 汲 extreme is 1 volt, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP11 (6 volts), so the first medium voltage The switch MP11 does not crash. The voltage across the source terminal and the gate terminal of the first medium voltage switch MP12 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP12 is 0 volt, and the gate terminal of the first medium voltage switch MP12 is connected to the gate terminal. The extreme voltage across the voltage is 1 volt, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP12, so the first medium voltage switch MP12 will not collapse. In addition, the voltage across the source terminal and the gate terminal of the first medium voltage switch MP13 is 1 volt, the voltage across the source terminal and the 汲 terminal of the first medium voltage switch MP13 is 1 volt, and the gate terminal of the first medium voltage switch MP13 The voltage across the pole of the 汲 is 0 volts, which does not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP13, so the first medium voltage switch MP13 does not collapse. It can be understood that, in the case that the load is heavy and the power supply voltage VHH is as low as 1 volt, the first medium voltage switches MP11, MP12 and MP13 can still be respectively turned on, so that the high voltage power supply device 200 can still be under low voltage conditions. working normally.

In general, the high voltage power supply unit 200 can operate normally as long as the load is light or heavy, as long as the power supply voltage VHH is in the range of 1 volt to 16 volts. Therefore, the range of the power supply voltage VHH in which the high-voltage power supply device 200 can operate normally and the range of its output voltage can be effectively improved.

Referring to FIG. 3, FIG. 3 is a schematic diagram of a circuit structure of a high voltage power supply device according to another embodiment of the present invention. The high voltage power supply device 300 may include four first medium voltage switches MP11, MP12, MP13 and MP14, four first switch series groups 311, 312, 313 and 314 (hereinafter referred to as: auxiliary switch series group 311, bias switch series Group 312, bias switch series group 313, bias switch series group 314), second switch series group 320, three first current sources 332, 333 and 334, auxiliary component 340, The two diodes DM1 and DM2, a sixth switch series group 391, and the current mirror circuit 350 are not limited thereto. It is worth mentioning that the number of the first switch series groups configured by the present invention is equal to the number of the first medium voltage switches. In addition, the number L of the first current source, the number W of the diodes, and the number F of the sixth switch series are all associated with the number M of the first medium voltage switches, where L=M-1, W=M- 2 and F = M-3. The first medium voltage switches MP11, MP12, MP13 and MP14 are serially connected in series, and are connected in series between the power supply voltage VHH and the output terminal OT of the high voltage power supply device 300. The first medium voltage switches MP11, MP12, MP13, and MP14 may be controlled by the first bias voltages VG1, VG2, VG3, and VG4, respectively, to transmit the power supply voltage VHH to the output terminal OT.

The first end of the auxiliary switch series group 311 and the first end of the bias switch series group 312, 313, 314 are coupled to the power supply voltage VHH. The second terminal of the auxiliary switch series group 311 generates a first bias voltage VG1, and the second terminals of the bias switch series group 312, 313, 314 respectively generate first bias voltages VG2, VG3, VG4.

The second switch series group 320 is coupled between the second end of the auxiliary switch series group 311 and the ground voltage GND. The second switch series group 320 is used to limit the current flowing through the auxiliary switch series group 311, and is controlled to be turned on and off by the control signal CRS, so that the auxiliary switch series group 311 generates the first bias voltage VG1.

The first current sources 332, 333, 334 are respectively coupled between the second ends of the bias switch series groups 312, 313, 314 and the ground voltage GND to respectively provide the operation of the bias switch series groups 312, 313, 314 The first bias current.

The internal structure and implementation manner of the auxiliary switch series group 311 and the bias switch series groups 312 and 313 are similar to the auxiliary switch series group 211 of FIG. 2, respectively. The series of groups 212 and 213 are closed, so the above related descriptions may be referred to, and details are not described herein again. The following is only described for the bias switch series group 314.

The bias switch series group 314 can include a plurality of second medium voltage switches MP4_1~MP4_16, wherein the second medium voltage switches MP4_1~MP4_16 are serially connected in series, and are serially connected in the power supply voltage VHH and the second of the bias switch series group 314. Between the ends. In the embodiment shown in FIG. 3, the second medium voltage switches MP4_1~MP4_16 of the bias switch series group 314 can be a transistor, but the invention is not limited thereto. The source terminal of the first-stage transistor (ie, the second medium-voltage switch MP4_1) is coupled to the power supply voltage VHH. The gate terminal of the first stage transistor (ie, the second medium voltage switch MP4_1) is coupled to the 汲 terminal and coupled to the source terminal of the next stage transistor (ie, the second medium voltage switch MP4_2). The coupling of the remaining transistors can be deduced by analogy. The gate terminal of the last stage transistor (ie, the second medium voltage switch MP4_16) is coupled to the 汲 terminal and coupled to the second end of the bias switch series group 314. It is worth mentioning that in the second medium voltage switches MP4_1~MP4_16 shown in FIG. 3, the base of each transistor can be coupled to its own source terminal, but the invention is not limited thereto. In another embodiment of the present invention, in order to save circuit area, the second medium voltage switches MP4_1~MP4_16 of the bias switch series group 314 can share a base body. In particular, the number of second medium voltage switches that can be shared can be At least two, and at most the number can be determined by the breakdown voltage and the threshold voltage of the second medium voltage switch, that is, the breakdown voltage is divided by the threshold voltage (if the divisible is not possible, the quotient can be unconditionally carried to obtain the above-mentioned maximum number) . For example, if the breakdown voltage of the second medium voltage switch is 6 volts and the threshold voltage is 1 volt, then at most 6 second medium voltage switches can share a base body, so the second medium voltage switch MP4_1~MP4_6 A base body can be shared, and the shared base body is coupled to the highest voltage of the second medium voltage switches MP4_1~MP4_6 (ie, the power supply voltage VHH). Similarly, the second medium voltage switches MP4_7~MP4_12 can share a base body, and the shared base body is coupled to the highest voltage of the second medium voltage switches MP4_7~MP4_12 (ie, the source terminal of the second medium voltage switch MP4_7); The two medium voltage switches MP4_13~MP4_16 can share a base body, and the common base body is coupled to the highest voltage of the second medium voltage switches MP4_13~MP4_16 (ie, the source terminal of the second medium voltage switch MP4_13). The breakdown voltage of the second medium voltage switch in the above example is 6 volts, and the threshold voltage of 1 volt is merely illustrative and is not intended to limit the present invention.

In other embodiments of the present invention, the second medium voltage switches MP4_13~MP4_16 of the bias switch series group 314 can be implemented by using a diode. For the coupling manner, refer to the second medium voltage switch MP1_1~ of FIG. MP1_6 is analogous to the coupling mode of the diodes, so it will not be described here.

In the embodiment shown in FIG. 3, the first medium voltage switches MP11, MP12, MP13, and MP14 may be transistors, but the invention is not limited thereto. The manner in which the first medium voltage switch MP11, MP12, MP13, and MP14 are connected to the transistor can be referred to the related description of FIG. 2 and the like, and will not be further described herein. In addition, the auxiliary component 340 is coupled between the source terminal and the gate terminal of the first-stage transistor (ie, the first medium-voltage switch MP11). The implementation and operation of the auxiliary component 340 are similar to the auxiliary component 140 of FIGS. 1 and 2. 240, so you can refer to the above related instructions, and will not repeat them.

In the embodiment shown in FIG. 3, in order to avoid the collapse of the first medium voltage switch MP13 and MP14, the diodes DM1 and DM2 are respectively arranged, wherein the two poles The anode end of the body DM1 is coupled to the source terminal of the first medium voltage switch MP12, and the cathode end of the diode DM1 is coupled to the 汲 terminal of the second medium voltage switch MP3_6 of the bias switch series group 313, and the anode of the diode DM2 Extremely coupled to the source terminal of the first medium voltage switch MP13, the cathode end of the diode DM2 is coupled to the 汲 terminal of the second medium voltage switch MP4_11 of the bias switch series group 314. The arrangement positions of the diodes DM1 and DM2 will be described in detail later.

In the embodiment shown in FIG. 3, the second switch series set 320 can include a resistor R1, three third medium voltage switches MN2, MN3 and MN4, an input medium voltage switch MN1, and a second current source 322. The first end of the resistor R1 is coupled to the second end of the auxiliary switch series group 311. The third medium voltage switches MN4, MN3 and MN2 are serially connected in series, and are connected in series between the second end of the resistor R1 and the first node ND1. The second current source 322 is coupled between the first node ND1 and the ground voltage GND to provide a second bias current required for the auxiliary switch series 311 to operate. The input medium voltage switch MN1 is coupled between the first node ND1 and the ground voltage GND, and is controlled to open and close by the control signal CRS. It is worth mentioning that the third medium voltage switches MN2, MN3 and MN4 are respectively controlled by the input bias voltage VSP, the second bias voltage VG21 and the second bias voltage VG22 to prevent the input medium voltage switch MN1 from collapsing. The input bias voltage VSP can be a fixed medium voltage voltage value, for example, 5 volts, but the invention is not limited thereto. It is worth mentioning that the number L of the third medium voltage switches configured by the present invention is related to the number of the first medium voltage switches M, that is, L=M-1.

In the embodiment shown in FIG. 3, the current mirror circuit 350 is operative to receive the input bias voltage VSP and thereby generate second bias voltages VG21, VG22. Detailed The current mirror circuit 350 can include a reference circuit 351 and two mapping circuits 352, 353. The reference circuit 351 is configured to receive the input bias voltage VSP and generate a reference voltage VR and a reference current accordingly. The mapping circuits 352, 353 receive the reference voltage VR to map the bias currents, respectively, and generate second bias voltages VG21, VG22, respectively. It is worth mentioning that the number W of mapping circuits configured by the present invention is related to the number of first medium voltage switches M, that is, W=M-2.

Still further, the reference circuit 351 can include a third switch series group 3513, a diode DP, and a fourth switch series group 3514. The third switch series group 3513 includes fourth medium voltage switches MP5_1~MP5_5. The fourth medium voltage switch MP5_1~MP5_5 is serially connected between the power supply voltage VHH and the second node ND2, wherein the fourth medium voltage switch MP5_1 can generate the reference voltage VR. In the embodiment of FIG. 3, the fourth medium voltage switch MP5_1~MP5_5 may be a transistor, wherein a source terminal of the first stage transistor (fourth medium voltage switch MP5_1) is coupled to a power supply voltage VHH, and each stage of the transistor (for example The gate terminal of the fourth medium voltage switch MP5_1)) is coupled to the 汲 terminal and coupled to the source terminal of the next-stage transistor (for example, the fourth medium-voltage switch MP5_2), and the last-stage transistor (the fourth medium-voltage switch MP5_5) The gate terminal is coupled to the 汲 terminal and coupled to the second node ND2. The structure and implementation of the diode DP and the fourth switch series 3514 are similar to the diode DP and the fourth switch series 2514 of FIG. 2 respectively. Therefore, reference may be made to the above description, and details are not described herein again. It is worth mentioning that in the fourth medium voltage switch MP5_1~MP5_5 shown in FIG. 3, the base of each transistor can be coupled to its own source terminal, but the invention is not limited thereto. In another embodiment of the present invention, in order to save circuit area, the fourth medium voltage switches MP5_1~MP5_5 may share a base. In particular, the number of the fourth medium voltage switches that can be shared may be at least two, and the maximum number may be determined by the breakdown voltage and the threshold voltage of the fourth medium voltage switch, that is, the breakdown voltage is divided by the threshold voltage (if it is impossible to divide) , the unconditional carry of the quotient can be obtained to obtain the above-mentioned maximum number). For example, if the breakdown voltage of the fourth medium voltage switch is 6 volts and the threshold voltage is 1 volt, then at most 6 fourth medium voltage switches share a base body, so the fourth medium voltage switch MP5_1~MP5_5 can share A substrate, and the shared base is coupled to the highest voltage of the fourth medium voltage switches MP5_1~MP5_5 (ie, the power supply voltage VHH). The breakdown voltage of the fourth medium voltage switch in the above example is 6 volts, and the threshold voltage of 1 volt is merely illustrative and is not intended to limit the present invention.

In other embodiments of the present invention, in addition to the fourth medium voltage switch MP5_1, the fourth medium voltage switch MP5_2~MP5_5 may also be implemented by using a diode, but the invention is not limited thereto. The anode end of the first-stage diode (ie, the second medium-voltage switch MP5_2) is coupled to the 汲 terminal of the fourth medium-voltage switch MP5_1. The cathode end of the first-stage diode (ie, the second medium-voltage switch MP5_2) is coupled to the anode terminal of the next-stage diode (ie, the second medium-voltage switch MP5_3). The coupling of the remaining diodes can be deduced by analogy. The cathode end of the last diode (ie, the second medium voltage switch MP5_5) is coupled to the second node ND2.

The first level mapping circuit 352 can include a fifth switch series group 2525 and two sixth medium voltage switches MPC6, MPC61. The structure and implementation of the fifth switch series group 2525 is similar to the fifth switch series group 2525 of FIG. 2, so reference may be made to the related description of FIG. 2 above, and details are not described herein again. The first stage sixth intermediate voltage switch MPC6 and the second stage sixth medium voltage switch MPC61 are serially connected in series, and are serially connected in series with the power supply voltage VHH. Between the third node ND31. The sixth medium voltage switch MPC6 can react to the reference voltage VR to generate a fourth bias current required for the operation of the fifth switch series group 2525, and the sixth medium voltage switch MPC61 is controlled by the bias voltage VG41 to prevent the sixth medium voltage. The switch MPC6 crashed.

In particular, the third node ND31 of the mapping circuit 352 is further coupled to the cathode end of the diode DP, so that after the power supply voltage VHH is pulled up to a high voltage, the second intermediate voltage switch MN5_1~MN5_11 generates a second The bias voltage VG21 can replace the initial clamp voltage VCP to control the five medium voltage switch MNC2, thereby preventing the fifth medium voltage switch MNC1 from collapsing. A detailed description will be given later.

The second stage mapping circuit 353 can include a fifth switch series group 3535 and a sixth medium voltage switch MPC7. The fifth switch series group 3535 has a plurality of seventh medium voltage switches MN7_1~MN7_17. The seventh medium voltage switches MN7_1 MN MN7_17 are serially connected in series, and are connected in series between the third node ND32 and the ground voltage GND to generate a second bias voltage VG22. The sixth medium voltage switch MPC7 is coupled between the power supply voltage VHH and the third node ND32, and reacts with the reference voltage VR to generate a fourth bias current required for the fifth switch series group 3535 to operate.

In the embodiment shown in FIG. 3, the seventh medium voltage switches MN7_1~MN7_17 may be transistors, but the invention is not limited thereto. The coupling mode of the seventh medium voltage switch MN7_1~MN7_17 for the transistor can be deduced by reference to the description of the seventh medium voltage switch MN5_1~MN5_11 of FIG. 2, and details are not described herein again. It is worth mentioning that in the seventh medium voltage switches MN7_1~MN7_17 shown in FIG. 3, the base of each transistor can be coupled to its own source terminal, but the invention is not limited thereto. in In another embodiment of the present invention, in order to save circuit area, the seventh medium voltage switches MN7_1~MN7_17 may share a base body. In particular, the number of seventh medium voltage switches that can be shared may be at least two, and at most, the number may be The breakdown voltage of the seventh medium voltage switch is determined by the threshold voltage, that is, the breakdown voltage is divided by the threshold voltage (if it is impossible to divisible, the quotient can be unconditionally carried to obtain the above-mentioned maximum number). For example, if the breakdown voltage of the seventh medium voltage switch is 6 volts and the threshold voltage is 1 volt, then at most 6 seventh medium voltage switches can share a matrix, so the seventh medium voltage switch MN7_1~MN7_6 can Sharing a base body, and the shared base body is coupled to the lowest voltage of the seventh medium voltage switches MN7_1 MN MN7_6 (ie, the source terminal of the seventh medium voltage switch MN7_6); the seventh medium voltage switches MN7_7 MN MN7_12 can share a base body, and The shared base body is coupled to the lowest voltage of the seventh medium voltage switches MN7_7~MN7_12 (ie, the source terminal of the seventh medium voltage switch MN7_12); and the seventh medium voltage switch MN7_13~MN7_17 can share a base body and the shared base body coupling Connected to the lowest voltage of the seventh medium voltage switch MN7_13~MN7_17 (ie, the ground voltage GND). The breakdown voltage of the seventh medium voltage switch in the above example is 6 volts, and the threshold voltage of 1 volt is merely illustrative and is not intended to limit the present invention.

In other embodiments of the present invention, the seventh medium voltage switch MN7_1~MN7_17 can be implemented by using a diode, but the invention is not limited thereto. The seventh medium voltage switch MN7_1~MN7_17 is a coupling mode of the diode. The seventh medium voltage switch MN5_1~MN5_11 of FIG. 2 is referred to as a description of the diode, and will not be described herein.

The sixth switch series group 391 can include an eighth medium voltage switch MP8_1~MP8_6, wherein the eighth medium voltage switch MP8_1~MP8_6 are serially connected in series, and are connected in series between the power supply voltage VHH and the fourth node ND4. The fourth current source 359 is coupled between the fourth node ND4 and the ground voltage GND.

It is worth mentioning that the number of the eighth medium voltage switches of the H-th sixth switch series group configured by the present invention is equal to the second of the H-th bias switch series group in the L bias switch series group. The number of pressure switches, where H is a positive integer less than or equal to F. In the illustrated embodiment of FIG. 3, there are three bias switch series groups 312-314, so L=3; in the illustrated embodiment of FIG. 3, there is a sixth switch series group 391, so H=1. . Therefore, the number of the eighth medium voltage switches MP8_1~MP8_6 configured in FIG. 3 is equal to the number of the second medium voltage switches MP2_1~MP2_6 of the first bias switch series group 312, which is six.

In the embodiment shown in FIG. 3, the eighth medium voltage switches MP8_1~MP8_6 may be transistors, but the invention is not limited thereto. The coupling mode of the eighth medium voltage switch MP8_1~MP8_6 for the transistor can be deduced by reference to the description of the second medium voltage switch MP2_1~MP2_6 of FIG. 2 above, and details are not described herein again. It is worth mentioning that in the eighth medium voltage switches MP8_1~MP8_6 shown in FIG. 3, the base of each transistor can be coupled to its own source terminal, but the invention is not limited thereto. In another embodiment of the present invention, in order to save the circuit area, the eighth medium voltage switches MP8_1~MP8_6 may share a base body, and the number of the eighth medium voltage switches that can be shared may be at least two, and the maximum number may be the eighth. The breakdown voltage of the medium voltage switch is determined by the threshold voltage, that is, the breakdown voltage is divided by the threshold voltage (if it is impossible to divisible, the quotient can be unconditionally carried to obtain the above-mentioned maximum number). For example, if the eighth The medium voltage switch has a breakdown voltage of 6 volts and a threshold voltage of 1 volt, and at most six eighth medium voltage switches share a base body. Therefore, the eighth medium voltage switch MP8_1~MP8_6 can share a base body and the shared base body. The highest voltage (ie, the power supply voltage VHH) is coupled to the eighth medium voltage switch MP8_1~MP8_6. The breakdown voltage of the eighth medium voltage switch in the above example is 6 volts, and the threshold voltage of 1 volt is merely illustrative and is not intended to limit the present invention.

In other embodiments of the present invention, the eighth medium voltage switch MP8_1~MP8_6 can be implemented by using a diode, but the invention is not limited thereto. The eighth medium voltage switch MP8_1~MP8_6 is a coupling mode of the diode. The second medium voltage switch MP2_1~MP2_6 of FIG. 2 is a description of the diode, and is not described here.

It is to be noted that the gate terminal of the sixth intermediate voltage switch of the Vth stage in each stage mapping circuit configured by the present invention is coupled to the fourth node of the series connection group of the Tth sixth switch, wherein V is less than or An integer equal to the number of sixth medium voltage switches and greater than or equal to two, and T=V-1. Therefore, in the embodiment shown in FIG. 3, the gate terminal of the second-stage sixth medium-voltage switch MPC61 in the first-stage mapping circuit 352 is coupled to the fourth node ND4 of the sixth switch series group 391 (ie, The gate terminal of the eighth-stage medium voltage switch MP8_6 of the eighth-stage medium voltage switch MP8_1~MP8_6). In particular, the configuration of the second-stage sixth medium-voltage switch MPC61 can prevent the first-stage sixth medium-voltage switch MPC6 from collapsing.

In the embodiment shown in FIG. 3, the power supply voltage VHH can be a positive high voltage; the first medium voltage switch MP11~MP14, the second medium voltage switch MP1_1~MP1_6, MP2_1~MP2_6 and MP3_1~MP3_11, MP4_1~MP4_16, the first Four medium pressure Off MP5_1~MP5_5, sixth medium voltage switch MPC6, MPC61, MPC7 and eighth medium voltage switch MP8_1~MP8_6 can be P type gold oxygen half field effect transistor; and third medium voltage switch MN2~MN4, input medium voltage switch MN1 The fifth medium voltage switch MNC1 and MNC5 and the seventh medium voltage switch MN5_1~MN5_11, MN7_1~MN7_17 may be N-type gold oxygen half field effect transistors. In this way, the high voltage power supply device 300 can provide a positive output voltage to the output terminal OT based on the control signal CRS. However, the invention is not limited thereto.

In other embodiments of the present invention, the power supply voltage VHH may be a negative power high voltage; the first medium voltage switch MP11~MP14, the second medium voltage switch MP1_1~MP1_6, MP2_1~MP2_6 and MP3_1~MP3_11, MP4_1~MP4_16, the fourth middle The pressure switch MP5_1~MP5_5, the sixth medium voltage switch MPC6, the MPC61, the MPC7 and the eighth medium voltage switch MP8_1~MP8_6 may be N-type gold oxygen half field effect transistors; and the third medium voltage switch MN2~MN4, input medium voltage switch The MN1, the fifth medium voltage switch MNC1 and the MNC5, and the seventh medium voltage switches MN5_1~MN5_11, MN7_1~MN7_17 may be P-type gold oxide half field effect transistors. As such, the high voltage power supply device 300 can provide a negative output voltage to the output terminal OT based on the control signal CRS. However, the invention is not limited thereto.

It is worth mentioning that, in order to prevent the first medium voltage switch MP11~MP14 and the input medium voltage switch MN1 from collapsing due to the high voltage of the power supply voltage VHH, the number of the second medium voltage switches MP1_1~MP1_6 in the auxiliary switch series group 311, The number of the second medium voltage switches MP2_1~MP2_6 in the bias switch series group 312, the number of the second medium voltage switches MP3_1~MP3_11 in the bias switch series group 313, and the bias switch string The number of the second medium voltage switches MP4_1~MP4_16 in the group 313, the coupling position of the diode DM1 and the diode DM2 must be carefully designed.

The following assumes that the input bias voltage VSP of FIG. 3 is 5 volts, the forward bias voltage VF of the diodes DM1, DM2, and the diode DP is 1 volt, the P-type MOS half-field effect transistor and the N-type MOS half-field effect. The breakdown voltage (hereinafter referred to as Vbd) of the transistor is 6 volts, and the threshold voltage (hereinafter referred to as Vtp) of the P-type MOS field-effect transistor is -1 volt, and the N-type MOSFET is half-effect. The threshold voltage (hereinafter referred to as Vtn) of the transistor is 1 volt, and the maximum value of the power supply voltage VHH (hereinafter referred to as VHHmax) can be set at 21 volts, and the minimum value of the power supply voltage VHH (hereinafter referred to as VHHmin) can be set at 5 volts.

Generally, the input bias voltage VSP and the power supply voltage VHH (approximately the voltage value of the input bias voltage VSP) are usually supplied to the high voltage power supply device 300, so the initial value of the initial clamp voltage VCP is 4 volts (ie, VSP). -VF), and the second bias voltage VG21 is equal to the initial value of the initial clamp voltage VCP of 4 volts. At this time, the input bias voltage VSP (5 volts) and the initial clamp voltage VCP (4 volts) can be used to bias the fifth medium voltage switches MNC1 and MNC2, respectively, so that the reference circuit 351 can generate the reference voltage VR and The current is referenced and the mapping circuits 352, 353 are mapped out of the bias current to complete the precharge operation of the current mirror circuit 350. Then, the power supply voltage VHH can be pulled up (for example, pulled to VHHmax, 21 volts) under high voltage application. At this time, the fifth switch series group 2525 will generate a bias voltage VG21 of 11 volts (ie, 11 × Vtn ). And raise the initial clamping voltage VCP from 4 volts to 11 volts. In other words, the bias voltage VG21 at this time not only biases the third medium voltage switch MN3 but also biases the fifth medium voltage switch MNC2. Since the power supply voltage VHH is pulled up to 21 volts, the voltage at the second node ND2 is 16 volts (ie 21-(5×| Vtp |)), and the initial clamping voltage VCP will rise from 4 volts to 11 volts, thus avoiding The fifth medium voltage switch MNC2 crashes.

In addition, in the case where the power supply voltage VHH is 21 volts, in order to avoid a collapse between the source terminal and the 汲 terminal of the first medium voltage switch MP11, the voltage value VP1 of the source terminal of the first medium voltage switch MP12 can be set to 16 Volt (minimum); in order to avoid a collapse between the source terminal and the 汲 terminal of the first medium voltage switch MP12, the voltage value VP2 of the source terminal of the first medium voltage switch MP13 can be set to 11 volts (minimum value); To avoid a collapse between the source terminal and the 汲 terminal of the first medium voltage switch MP13, the voltage value VP3 of the source terminal of the first medium voltage switch MP14 can be set to 6 volts (minimum value). In the above situation, the number of the second medium voltage switches MP1_1 to MP1_6 is determined by the breakdown voltage Vbd and the threshold voltage Vtp, for example, as shown in the above formula (1), and the number thereof is six. The number of the second medium voltage switches MP2_1 to MP2_6 is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP1 of the source terminal of the first medium voltage switch MP12, and the threshold voltage Vtp, for example, as shown in the above formula (2). The number is six. The number of the second medium voltage switches MP3_1 to MP3_11 is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP2 of the source terminal of the first medium voltage switch MP13, and the threshold voltage Vtp, for example, as shown in the above formula (3). Is 11. In addition, the number of the second medium voltage switches MP4_1 to MP4_16 is determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP3 of the source terminal of the first medium voltage switch MP14, and the threshold voltage Vtp, for example, as shown in the following formula (7). Where S4 is the second medium voltage switch The number of MP4_1~MP4_16, the number is 16. Incidentally, if the calculation result according to the formula (7) has a decimal number, the calculation result may be unconditionally carried to obtain the quantity.

S 4=( VHH max- VP 3 - Vtp )÷| Vtp | (7)

It should be noted that the anode end of the first diode DM1 is coupled to the source terminal of the second of the four first medium voltage switches MP11~MP14 (ie, the first medium voltage switch MP12). The cathode terminal of diode DM1 312-314 is coupled to the bias switch switches the series combination of the series combination of the second bias voltage (i.e., bias switch group 313 series) Z ₁ of the second pressure dip switch Extremely, where Z _{1 is} determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP1 of the source terminal of the first medium voltage switch MP12, and the threshold voltage Vtp to prevent the first medium voltage switch MP13 from collapsing when the load is lightly loaded. For example, it is shown by the following formula (8.1). In the present embodiment, Z ₁ is 6, so the cathode end of the diode DM1 is coupled to the 汲 terminal of the sixth second medium voltage switch MP3_6 in the bias switch series group 313. Incidentally, if the calculation result according to the formula (8.1) has a decimal number, the calculation result may be unconditionally carried as Z ₁ .

Z ₁ =( VHH max- VP 1- Vtp )÷| Vtp | Formula (8.1)

In addition, the anode terminal of the diode DM2 is coupled to the source terminal of the third of the four first medium voltage switches MP11 to MP14 (ie, the first medium voltage switch MP13). Z ₂ of the second intermediate-pressure switch and diode DM2 female terminal coupled to the bias switch in series with the third group of the series combination of the bias switch 314 ~ 312 (i.e., the bias switch group 314 series) for pumping Extremely, where Z _{2 is} determined by the maximum value VHHmax of the power supply voltage VHH, the voltage value VP2 of the source terminal of the first medium voltage switch MP13, and the threshold voltage Vtp to prevent the first medium voltage switch MP14 from collapsing when the load is lightly loaded. For example, it is shown by the following formula (8.2). In the present embodiment, Z ₂ is 11, so the cathode end of the diode DM2 is coupled to the 汲 terminal of the eleventh second intermediate voltage switch MP4_11 of the bias switch series group 314. Incidentally, if the calculation result according to the formula (8.2) has a decimal, the calculation result may be unconditionally carried as Z ₂ .

Z ₂ =( VHH max- VP 2- Vtp )÷| Vtp | Formula (8.2)

In addition, the number of the fourth intermediate voltage switches MP5_1 MP MP5_5 in the third switch series group 3513 of the reference circuit 351 can be determined by the minimum value VHHmin of the power supply voltage VHH and the threshold voltage Vtp, for example, as shown in the above formula (5). It is 5. The number of the seventh medium voltage switches MN5_1 to MN5_11 of the fifth switch series group 2525 of the mapping circuit 352 can be determined by the breakdown voltage Vbd, the threshold voltage Vtn, and the input bias voltage VSP, for example, as shown in the above formula (6). The number is 11. As a result, the second bias voltage VG21 can be set to 11 volts. In addition, the number of the seventh intermediate voltage switches MN7_1 MN MN7_17 of the fifth switch series group 3535 of the mapping circuit 353 can be determined by the breakdown voltage Vbd, the threshold voltage Vtn and the second bias voltage VG21, for example, the following formula (9) It is shown that S61 is the number of the seventh medium voltage switches MN7_1~MN7_17, and the number is 17. The number of the sixth medium voltage switches MPC6, MPC61 of the mapping circuit 352 can be determined by the maximum value VHHmax of the power supply voltage, the second bias voltage VG21, and the breakdown voltage Vbd to prevent collapse, for example, as shown in the following formula (10), S71 is the number of the sixth medium voltage switches MPC6 and MPC61, and the number is two. The number of the sixth medium voltage switch MPC7 of the mapping circuit 353 can be the maximum value VHHmax of the power supply voltage, the second bias voltage The VG 22 and the breakdown voltage Vbd are determined to prevent a collapse, for example, as shown in the following formula (11), wherein S81 is the number of the sixth medium voltage switch MPC7, and the number is one. Incidentally, if the calculation result according to the equations (9), (10), and (11) has a decimal number, the calculation result may be unconditionally carried as the number. The operation of the high voltage power supply device 300 will be described below.

S 61=( Vbd + VG 21)÷ Vtn (9)

S 71=( VHH max- VG 21)÷ Vbd (10)

S 81=( VHH max- VG 22)÷ Vbd (11)

When the power supply voltage VHH is 21 volts and the input bias voltage VSP is 5 volts, the gate terminal of the eighth medium voltage switch MP8_6 of the sixth switch series group 391 will provide a bias of 15 volts (ie, VHH -6×| Vtp |). The voltage VG41 is applied to turn on the sixth medium voltage switch MPC61, and the mapping circuit 352 in the current mirror circuit 350 will provide a second bias voltage VG21 of 11 volts (i.e., 11 x Vtn ), which will be provided by the mapping circuit 353 in the current mirror circuit 350. The second bias voltage VG22 of 17 volts (ie, 17 × Vtn ), and the first bias voltage VG2 provided by the bias switch series 312 is 15 volts (ie, VHH -6 × | Vtp |), the diode DM1 The cathode terminal (ie, the 汲 terminal of the second medium voltage switch MP3_6) has a voltage of 15 volts (ie, VHH -6×| Vtp |), and the bias voltage switch series 313 provides a first bias voltage VG3 of 10 volts ( That is, VHH -11×| Vtp |), the cathode end of the diode DM2 (ie, the 汲 terminal of the second medium voltage switch MP4_11) has a voltage of 10 volts (ie, VHH -11×| Vtp |), bias switch series group The first bias voltage VG4 provided by 314 is 5 volts (i.e., VHH - 16 x | Vtp |).

In a case, if the load (not shown) connected to the output terminal OT of the high voltage power supply device 300 is lightly loaded and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third medium voltage switch MN2 to MN4 may be It is turned on in response to the input bias voltage VSP (which is 5 volts), the second bias voltage VG21 (which is 11 volts), and the second bias voltage VG22 (which is 17 volts). At this time, the first bias voltage VG1 is 15 volts (ie, VHH -6 × | Vtp |), so the first medium voltage switches MP11 to MP14 can be turned on in order. Since the load is lightly loaded, the voltage of the source terminal of the first medium voltage switch MP12 is 21 volts, and the voltage of the source terminal of the first medium voltage switch MP13 (ie, the anode terminal of the diode DM2) is 21 volts, the first The voltage at the source terminal of the voltage switch MP14 is 21 volts, and the voltage at the output terminal OT is also 21 volts.

Based on the voltage at the cathode terminal of the diode DM1 is 15 volts, the voltage across the diode DM1 (6 volts) will be greater than the forward bias of the diode DM1 (1 volt), so the diode DM1 will Turned on, causing the voltage at the cathode terminal of the diode DM1 to be pulled up to 20 volts, so the first bias voltage VG3 is pulled up from 10 volts to 15 volts, and the second medium voltage switches MP3_1~MP3_6 are turned off. In addition, based on the voltage of the cathode terminal of the diode DM2 is 10 volts, the voltage across the two ends of the diode DM2 (11 volts) will be greater than the forward bias of the diode DM2 (1 volt), so the diode The DM2 will be turned on, causing the voltage at the cathode terminal of the diode DM2 to be pulled up to 20 volts, so the first bias voltage VG4 is pulled up from 5 volts to 15 volts, and the second medium voltage switches MP4_1~MP4_11 are turned off.

As a result, the voltage across the source terminal (21 volts) and the gate terminal (15 volts) of the first medium voltage switch MP11 is 6 volts, and the source terminal and the 汲 terminal of the first medium voltage switch MP11 (21 volts). The crossover voltage is 0 volts, and the first medium voltage switch MP11 The gate voltage of the gate and the extreme voltage of the gate are 6 volts, which do not exceed the breakdown voltage Vbd of the first medium voltage switch MP11 (6 volts), so the first medium voltage switch MP11 does not collapse. The voltage across the source terminal (21 volts) and the gate terminal (15 volts) of the first medium voltage switch MP12 is 6 volts, and the source voltage of the first medium voltage switch MP12 and the voltage extreme of the 汲 terminal (21 volts) It is 0 volt, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP12 is 6 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP12 (6 volts), so the first medium voltage switch MP12 There will be no collapse. The voltage across the source terminal (21 volts) and the gate terminal (15 volts) of the first medium voltage switch MP13 is 6 volts, and the voltage across the source terminal and the 汲 terminal (21 volts) of the first medium voltage switch MP13 is 0 volt, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP13 is 6 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP13 (6 volts), so the first medium voltage switch MP13 is also There won't be a crash. In addition, the voltage across the source terminal (21 volts) and the gate terminal (15 volts) of the first medium voltage switch MP14 is 6 volts, and the source terminal of the first medium voltage switch MP14 and the 汲 terminal (21 volts) cross. The voltage is 0 volt, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP14 is 6 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP14 (6 volts), so the first medium voltage switch MP14 will not crash.

It can be understood that since the diodes DM1 and DM2 are turned on, the first bias voltage VG3 is pulled up from 10 volts to 15 volts, and the first bias voltage VG4 is pulled up from 5 volts to 15 volts, thereby avoiding the first A medium voltage switch MP13 and MP14 crashed. Therefore, when the load is light load and the power supply voltage VHH is at a high voltage of 21 volts, the first medium voltage switch MP11~MP14 will not collapse, so the high voltage The power supply unit 300 can operate normally.

In another case, if the load (not shown) connected to the output terminal OT of the high voltage power supply device 300 is a heavy load and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third medium voltage switch MN2 to MN4 may be They are turned on in response to the input bias voltage Vsp (which is 5 volts), the second bias voltage VG21 (which is 11 volts), and the second bias voltage VG22 (which is 17 volts). At this time, the first bias voltage VG1 is 15 volts (ie, VHH -6 × | Vtp |), so the first medium voltage switches MP11 to MP14 can be turned on in order. Since the load is heavy, the source terminal of the first medium voltage switch MP12 (ie, the anode end of the diode DM1) is pulled down to 16 volts, the source terminal of the first medium voltage switch MP13 (ie, the anode terminal of the diode DM2) The voltage is pulled down to 11 volts, the voltage at the source terminal of the first medium voltage switch MP14 is pulled down to 6 volts, and the voltage at the output OT is pulled down to about 0 volts. The voltage at the cathode terminal of the diode DM1 is 15 volts, and the voltage across the two ends of the diode DM1 (which is 1 volt) is not greater than the forward bias voltage (1 volt), so the diode DM1 is turned off, so The first bias voltage VG3 is maintained at 10 volts, and the second medium voltage switches MP3_1~MP3_11 are maintained in an on state. In addition, the voltage at the cathode terminal of the diode DM2 is 10 volts, and the voltage across the two ends of the diode DM2 (which is 1 volt) is not greater than the forward bias voltage (1 volt), so the diode DM2 is off. Therefore, the first bias voltage VG4 is maintained at 5 volts, and the second medium voltage switches MP4_1~MP4_16 are maintained in an on state.

As a result, the voltage across the source terminal (21 volts) and the gate terminal (15 volts) of the first medium voltage switch MP11 is 6 volts, and the source terminal and the 汲 terminal of the first medium voltage switch MP11 (16 volts). The crossover voltage is 5 volts, and the first medium voltage switch MP11 The gate voltage of the gate and the extreme voltage of the gate are 1 volt, which do not exceed the breakdown voltage Vbd (6 volts) of the first medium voltage switch MP11, so the first medium voltage switch MP11 does not collapse. The voltage across the source terminal (16 volts) and the gate terminal (15 volts) of the first medium voltage switch MP12 is 1 volt, and the source voltage of the first medium voltage switch MP12 and the 汲 terminal (11 volts) are across the voltage. 5 volts, and the voltage across the gate and the 汲 terminal of the first medium voltage switch MP12 is 4 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP12 (6 volts), so the first medium voltage switch MP12 There will be no collapse. The voltage across the source terminal (11 volts) and the gate terminal (10 volts) of the first medium voltage switch MP13 is 1 volt, and the voltage across the source terminal and the 汲 terminal (6 volts) of the first medium voltage switch MP13 is 5 volts, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP13 is 4 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP13 (6 volts), so the first medium voltage switch MP13 is also There won't be a crash. In addition, the voltage across the source terminal (6 volts) and the gate terminal (5 volts) of the first medium voltage switch MP14 is 1 volt, and the source terminal of the first medium voltage switch MP14 and the 汲 terminal (0 volt) cross The voltage is 6 volts, and the voltage across the gate terminal and the 汲 terminal of the first medium voltage switch MP14 is 5 volts, which does not exceed the breakdown voltage Vbd of the first medium voltage switch MP14 (6 volts), so the first medium voltage switch MP14 will not crash. It can be seen that, in the case where the load is heavy and the power supply voltage VHH is at a high voltage of 21 volts, the first medium voltage switches MP11 to MP14 do not collapse, and thus the high voltage power supply device 300 can operate normally.

In another case, when the power supply voltage VHH is 5 volts, the load (not shown) connected to the output terminal OT of the high voltage power supply device 300 is lightly loaded and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third Medium voltage switch MN2~MN4 can be sequentially Being turned on. At this time, the first bias voltage VG1 is connected to the ground potential GND through the first current source 322 and is about 0 volts, and the first bias voltages VG2 VG VG4 provided by the bias switch series groups 312-314 are transmitted through the second current source. 332, 333 and 334 are connected to the ground potential GND and are both 0 volts, the first medium voltage switches MP11~MP14 are sequentially turned on, and the diodes DM1 and DM2 are also turned on. Based on the power supply voltage VHH is 5 volts, the first bias voltages VG1, VG2, VG3, VG4 are 0 volts, and the output voltage is 5 volts (since the load is light load), so the first medium voltage switch MP11~MP14 There won't be a crash. It can be understood that, when the load is light load and the power supply voltage VHH is as low as 5 volts, the first medium voltage switches MP11~MP14 can still be turned on and will not be respectively collapsed, so the high voltage power supply device 300 is at a low voltage of 5 volts. In the case of normal operation.

In another case, when the power supply voltage VHH is 5 volts, the load (not shown) connected to the output terminal OT of the high voltage power supply device 300 is a heavy load, and the input medium voltage switch MN1 is turned on based on the control signal CRS, the third The medium voltage switches MN2 to MN4 can be turned on, respectively. At this time, the first bias voltage VG1 is connected to the ground potential GND through the first current source 322 and is about 0 volts, and the first bias voltages VG2 VG VG4 provided by the bias switch series groups 312-314 are transmitted through the second current source. 332, 333 and 334 are connected to the ground potential GND and are both 0 volts, the first medium voltage switches MP11~MP14 are sequentially turned on, and the diodes DM1 and DM2 are turned off. Based on the power supply voltage VHH is 5 volts, the first bias voltages VG1, VG2, VG3, VG4 are 0 volts, and the output voltage is 0 volts (due to the load being heavy), so the first medium voltage switch MP11~MP14 are There won't be a crash. Understandably, the load is heavy and the power supply voltage VHH In the case of as low as 5 volts, the first medium voltage switches MP11 to MP14 can still be turned on without collapse, so that the high voltage power supply device 300 can operate normally at a low voltage of 5 volts.

In general, the high voltage power supply unit 300 can operate normally as long as the load is light or heavy, as long as the power supply voltage VHH is in the range of 5 volts to 21 volts. Therefore, the range of the power supply voltage VHH in which the high-voltage power supply device 300 can operate normally and the range of its output voltage can be effectively improved.

In the above embodiment of the present invention, only two first medium voltage switches (ie, FIG. 1), three first medium voltage switches (ie, FIG. 2), and four first medium voltage switches (ie, FIG. 3) are exemplified. The embodiment of the present invention is described, but any one of ordinary skill in the art can introduce five or more first medium voltage switches according to the teachings of FIG. 1 to FIG. 3 above, so Let me repeat.

In summary, in the high-voltage power supply device of the embodiment of the present invention, the internal medium-voltage switching element does not collapse due to the high-voltage power supply device operating under a high-voltage power supply voltage. In addition, the circuit design of the high voltage power supply device according to the embodiment of the present invention can effectively improve the range of the power supply voltage and the output voltage of the high voltage power supply device that can operate normally.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100‧‧‧High voltage power supply unit

111‧‧‧Auxiliary switch series group, first switch series group

112‧‧‧Commutation switch series group, first switch series group

120‧‧‧Second switch series

130‧‧‧First current source

140‧‧‧Auxiliary components

CRS‧‧‧ control signal

GND‧‧‧ Grounding voltage

MN1‧‧‧Input medium voltage switch

MP11, MP12‧‧‧First Medium Voltage Switch

MP1_1~MP1_6, MP2_1~MP2_6‧‧‧Second medium voltage switch

OT‧‧‧ output

R1‧‧‧ resistance

VG1, VG2‧‧‧ first bias voltage

VHH‧‧‧Power supply voltage

VP1‧‧‧ voltage value

Claims (29)

A high voltage power supply device comprising: M first medium voltage switches, wherein the M first medium voltage switches are serially connected in series, and are connected in series between a power supply voltage and an output end of the high voltage power supply device, wherein the M The first medium voltage switches are respectively controlled by M first bias voltages to transmit the power voltage to the output terminal, wherein M is an integer greater than or equal to two; M first switches are connected in series, including an auxiliary a switch series group and L bias switch series groups, wherein a first end of each of the M first switch series groups is coupled to the power supply voltage, and each of the M first switch series groups The second end generates one of the M first bias voltages, wherein L=M-1; a second switch series group coupled between the second end of the auxiliary switch series group and a ground voltage The second switch is connected in series to limit current flowing through the series of auxiliary switches, and is controlled to be turned on and off by a control signal, so that the auxiliary switch series generates corresponding first bias voltages; and L a first current source, each of the L first current sources coupled to the L Between the second end of one of the pair of bias switches in series with the ground voltage to provide a corresponding first bias current required for operation of the series connection of the bias switches. The high voltage power supply device of claim 1, wherein each of the M first switch series groups comprises: a plurality of second medium voltage switches, wherein the second medium voltage switches are serially connected, And serially connected between the power voltage and the second end of the corresponding first switch series. The high voltage power supply device of claim 2, wherein the second medium voltage switches of each of the M first switch series groups are a plurality of transistors, wherein the plurality of transistors a source terminal of the primary transistor is coupled to the power supply voltage, and a gate terminal of each of the transistors is coupled to the 汲 terminal and coupled to a source terminal of the lower transistor, and the plurality of transistors The gate terminal of the last stage transistor is coupled to the 汲 terminal and coupled to the second end of the corresponding series of the first switch, wherein at least a portion of the substrates of the transistors are shared with each other and coupled to the At least a portion of the highest potential of the plurality of transistors, and the amount of the at least a portion of the transistors is determined by a breakdown voltage of the transistor and a threshold voltage. The high voltage power supply device of claim 2, wherein the second medium voltage switches of each of the M first switch series groups are a plurality of diodes, wherein the plurality of diodes are The anode end of the first diode is coupled to the power supply voltage, and the cathode end of each of the diodes is coupled to the anode terminal of the lower diode, and the last of the diodes The cathode end of the first diode is coupled to the second end of the corresponding series of the first switch. The high voltage power supply device of claim 2, wherein the M first medium voltage switches comprise: a plurality of transistors, wherein a source terminal of the first stage of the transistors is coupled to the power supply voltage, The 汲 terminal of each of the transistors is coupled to the source terminal of the next-stage transistor, and the 汲 terminal of the last-stage transistor of the transistors is coupled to the output terminal, wherein the transistors The gate terminal of the first-stage transistor is coupled to the second end of the series of auxiliary switches, and the gate terminal of the J-th transistor in the transistors is coupled to the first of the L pairs of bias switches The second end of the series of bias switches is in series, where J = I + 1, and I is a positive integer less than or equal to L. The high voltage power supply device of claim 5, wherein: the number of the second medium voltage switches in the series of auxiliary switches, a breakdown voltage of the transistors and a criticality of the transistors a voltage determination; and the number of the second medium voltage switches of the first bias switch series in the L series of bias switches, the maximum value of the power supply voltage, the first of the plurality of transistors The voltage at the source terminal of the J-level transistor and the threshold voltage of the transistors are determined. The high voltage power supply device of claim 5, further comprising: an auxiliary component coupled between the source terminal of the first stage transistor and the gate terminal to assist in controlling the first stage transistor The opening and closing operations. The high voltage power supply device of claim 7, wherein the auxiliary component is a resistor or a current source. The high voltage power supply device of claim 5, wherein M is an integer greater than two, and the high voltage power supply device further comprises: W diodes, the Xth diode of the W diodes The anode end is coupled to the source terminal of the Y-th transistor in the plurality of transistors, and the cathode end of the X-th diode is coupled to the Z-th second in the Y-th bias switch series group The 汲 extreme of the medium voltage switch, where W = M-2, Y = X + 1, X is a positive integer less than or equal to W, and Z is the maximum value of the power supply voltage, the yth grade in the transistors The voltage at the source terminal of the transistor and the threshold voltage of the transistors are determined. The high voltage power supply device of claim 2, wherein M is equal to two, and the second switch series includes: a resistor, the first end of the resistor is coupled to the second end of the auxiliary switch series; And an input medium voltage switch coupled between the second end of the resistor and the ground voltage, and controlled to open and close by the control signal. The high voltage power supply device of claim 10, wherein the power supply voltage is a positive high voltage, and each of the M first medium voltage switches and each of the second medium voltage switches are P The type of gold oxide half field effect transistor, and the input medium voltage switch is an N type gold oxygen half field effect transistor. The high voltage power supply device of claim 10, wherein the power supply voltage is a negative power high voltage, and each of the M first medium voltage switches and each of the second medium voltage switches are N type The gold-oxygen half field effect transistor, and the input medium voltage switch is a P-type gold oxygen half field effect transistor. The high voltage power supply device of claim 2, wherein M is an integer greater than two, and the second switch series includes: a resistor, the first end of the resistor coupled to the auxiliary switch series Two third intermediate voltage switches, the first intermediate third intermediate switch to the third intermediate medium voltage switch of the L third intermediate voltage switches are serially connected in series, and serially connected thereto Between the second end of the resistor and a first node; a second current source coupled between the first node and the ground voltage to provide a required one for operation of the auxiliary switch series a second bias current; and an input medium voltage switch coupled between the first node and the ground voltage, and controlled by the control signal to open and close, wherein the first stage third medium voltage switch to the first The W-stage third medium voltage switch is respectively controlled by W second bias voltages, and the L-th third-medium voltage switch is controlled by an input bias voltage to prevent the input medium voltage switch from collapsing, wherein = M-2. The high voltage power supply device of claim 13, further comprising: a current mirror circuit for receiving the input bias voltage and generating the W second bias voltages accordingly. The high voltage power supply device of claim 14, wherein the current mirror circuit comprises: a reference circuit for receiving the input bias voltage and generating a reference voltage; and W mapping circuits for The reference voltage is received and the W second bias voltages are generated accordingly. The high voltage power supply device of claim 15, wherein the reference circuit comprises: a third switch series group having at least one fourth medium voltage switch, the at least one fourth medium voltage switch being serially connected in series, and Connected between the power supply voltage and a second node, wherein the first intermediate voltage switch of the at least one fourth medium voltage switch generates the reference voltage; a diode, an anode end of the diode Receiving the input bias voltage, and the cathode end of the diode generates a clamping voltage; and a fourth switch series group coupled between the second node and the ground voltage for controlling the input bias The voltage and the clamping voltage provide a third bias current required for operation of the third switch series. The high voltage power supply device of claim 16, wherein: the at least one fourth medium voltage switch is at least one transistor, wherein a source terminal of the first stage transistor of the at least one transistor is coupled to the power source a voltage, a gate terminal of each of the at least one transistor is coupled to the drain terminal and coupled to a source terminal of the next-stage transistor, and a gate terminal of the last-stage transistor of the at least one transistor An extreme phase is coupled to and coupled to the second node, wherein the gate terminal of the first stage transistor generates the reference voltage, and at least a portion of the at least one transistor substrate is shared with each other and coupled to the at least And a portion of the at least one of the at least one of the plurality of transistors, and the amount of the at least one of the at least one transistor is determined by a breakdown voltage of the at least one transistor and a threshold voltage. The high voltage power supply device of claim 17, wherein the number of the at least one fourth medium voltage switch is determined by a minimum value of the power supply voltage and a threshold voltage of the plurality of transistors. The high voltage power supply device of claim 16, wherein the fourth switch series includes: a third current source, the first end of the third current source is coupled to the ground voltage; and two fifth a voltage switch, the two fifth medium voltage switches are respectively controlled by the clamping voltage and the input bias voltage, and the two fifth medium voltage switches are serially connected in series, and are serially connected to the second node and the third Between the second ends of the current source. The high voltage power supply device of claim 19, wherein the Kth stage mapping circuit of the W mapping circuits generates one of the W second bias voltages to control the Kth third intermediate voltage a switch, and K is a positive integer less than or equal to W, wherein the Kth stage mapping circuit comprises: a fifth switch series group having a plurality of seventh medium voltage switches, wherein the seventh medium voltage switches are serially connected in series And serially connected between a third node and the ground voltage to generate the corresponding second bias voltage; and U sixth medium voltage switches, the first sixth of the sixth sixth medium voltage switches The medium voltage switch to the Uth sixth sixth medium voltage switch are serially connected in series, and are serially connected between the power supply voltage and the third node, wherein the first stage sixth medium voltage switch reacts with the reference voltage Generating a fourth bias current required for the operation of the fifth switch series, wherein the number of the U sixth intermediate voltage switches is the maximum value of the power supply voltage, the second bias of the Kth stage mapping circuit The voltage is determined by a breakdown voltage of the U sixth medium voltage switches, wherein the W maps are electrically The third node of the first stage mapping circuit in the path is further coupled to the cathode end of the diode. The high voltage power supply device of claim 20, wherein M is an integer greater than three, and the high voltage power supply device further comprises F sixth switch series groups, wherein F=M-3, and the F sixth Each of the switch series groups includes: a plurality of eighth medium voltage switches, the eighth medium voltage switches are serially connected in series, and are connected in series between the power voltage and a fourth node; and a fourth current a source, coupled between the fourth node and the ground voltage, wherein the number of the eighth medium voltage switches of the Hth sixth switch series of the F sixth switch series groups is equal to the L The number of the second intermediate voltage switches of the series of the Hth bias switches in the series of bias switches, wherein H is a positive integer less than or equal to F. The high voltage power supply device of claim 21, wherein the eighth medium voltage switch is a plurality of transistors, wherein a source terminal of the first stage transistors of the plurality of transistors is coupled to the power supply voltage, a gate terminal of each of the transistors is coupled to the 汲 terminal and coupled to a source terminal of the lower stage transistor, and a gate terminal of the last stage transistor of the plurality of transistors is coupled to the 汲 terminal And coupled to the fourth node, wherein at least a portion of the substrates of the plurality of transistors are shared with each other and coupled to a highest potential of the at least a portion of the plurality of transistors, and the at least a portion of the transistors are The amount is determined by a breakdown voltage of the transistor and a threshold voltage. The high voltage power supply device of claim 22, wherein a gate terminal of the sixth intermediate voltage switch of the Vth stage in the Kth stage mapping circuit is coupled to the Tth of the F sixth switch series group The fourth node of the sixth switch series, wherein V is an integer less than or equal to U and greater than or equal to two, and T = V-1. The high voltage power supply device of claim 21, wherein the eighth medium voltage switch is a plurality of diodes, wherein an anode end of the first diode of the plurality of diodes is coupled to the power source a cathode, a cathode end of each of the diodes is coupled to an anode terminal of the lower diode, and a cathode end of the last diode of the diodes is coupled to the fourth node . The high voltage power supply device of claim 20, wherein: the seventh medium voltage switch is a plurality of transistors, wherein a source terminal of the first stage of the plurality of transistors is coupled to the ground voltage, The gate terminal of each of the transistors is coupled to the 汲 terminal and coupled to the source terminal of the lower stage transistor, and the gate terminal of the last stage transistor of the plurality of transistors is coupled to the 汲 terminal And coupled to the third node, wherein at least a portion of the substrates of the plurality of transistors are shared with each other and coupled to a lowest potential of the at least some of the transistors, and the at least part of the plurality of The number of crystals is determined by a breakdown voltage of the transistor and a threshold voltage. The high voltage power supply device of claim 25, wherein: the number of the plurality of transistors of the fifth switch series of the first stage mapping circuit of the W mapping circuits is determined by the transistors a breakdown voltage, a threshold voltage of the transistors, and the input bias voltage; and the number of the transistors in the series connection of the fifth switch of the Y-th mapping circuit in the W mapping circuits is determined by The breakdown voltage of the transistors is determined by the second bias voltage of the Xth stage mapping circuit in the W mapping circuits, where X=Y-1, and Y is less than or equal to W and greater than or equal to two. The integer. The high voltage power supply device of claim 20, wherein: the seventh medium voltage switch is a plurality of diodes, wherein a cathode end of the first diode of the plurality of diodes is coupled to the cathode terminal a grounding voltage, an anode end of each of the diodes is coupled to a cathode end of the lower diode, and an anode end of the last diode of the diodes is coupled to the third node. The high voltage power supply device of claim 20, wherein the power supply voltage is a positive high voltage, the M first medium voltage switches, the second medium voltage switches, the at least one fourth medium voltage switch, and The U sixth medium voltage switches are P-type gold-oxygen half field effect transistors, and the L third medium voltage switches, the input medium voltage switch, the two fifth medium voltage switches, and the seventh medium voltage switches It is an N-type gold oxide half field effect transistor. The high voltage power supply device of claim 20, wherein the power supply voltage is a negative power high voltage, the M first medium voltage switches, the second medium voltage switches, the at least one fourth medium voltage switch, and the The U sixth medium voltage switches are N-type gold-oxygen half field effect transistors, and the L third medium voltage switches, the input medium voltage switch, the two fifth medium voltage switches, and the seventh medium voltage switches are P-type gold oxide half field effect transistor.