CN116736924B - Voltage stabilizing source circuit with wide input range and low power consumption and electronic equipment - Google Patents
Voltage stabilizing source circuit with wide input range and low power consumption and electronic equipment Download PDFInfo
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- CN116736924B CN116736924B CN202311006607.6A CN202311006607A CN116736924B CN 116736924 B CN116736924 B CN 116736924B CN 202311006607 A CN202311006607 A CN 202311006607A CN 116736924 B CN116736924 B CN 116736924B
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- 238000001514 detection method Methods 0.000 claims abstract description 17
- 230000001105 regulatory effect Effects 0.000 claims description 14
- 230000001276 controlling effect Effects 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
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- 230000009286 beneficial effect Effects 0.000 description 1
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
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Abstract
The application discloses a voltage stabilizing source circuit with wide input range and low power consumption and an electronic device, comprising: the first branch module, the operational amplifier module and the output voltage detection module; a first branch module for generating a first voltage input to the operational amplifier module; limiting a maximum value of the first voltage when the external power supply voltage is higher than the reference power supply voltage; the operational amplifier module is used for receiving the first voltage and generating an output voltage; when the external power supply voltage is higher than the reference power supply voltage, clamping the output voltage to the first voltage through a negative feedback structure of the operational amplifier; the output voltage detection module is used for sending a control signal to the operational amplifier module when the output voltage is lower than the target output voltage, and the control signal is used for controlling a fourth high-voltage MOS tube in the operational amplifier module to be in a full-conduction state; and the operational amplifier module is also used for generating output voltage through the fourth high-voltage MOS tube in the full-on state after receiving the control signal.
Description
Technical Field
The application relates to the field of integrated circuits, in particular to a voltage stabilizing source circuit with wide input range and low power consumption and electronic equipment.
Background
The regulated power supply circuit is an electronic circuit that functions to convert a wide range of external power supply voltages into a stable output voltage. In many electronic devices, a stable voltage is required to drive various elements in a circuit, such as transistors, integrated circuits, sensors, and the like. Because of factors such as larger input range of power supply voltage and load change of power supply provided outside the chip, the input voltage can change, and the voltage is regulated by using a voltage stabilizing source circuit so as to ensure the stability and reliability of output voltage.
The basic principle of the voltage stabilizing source circuit is to keep the output voltage of the feedback control circuit at a stable level. In high voltage applications, if the voltage range of the externally input power is large, the power signal needs to be processed for the subsequent circuits. There are three types of common regulated source circuits: linear voltage stabilizing source, switching voltage stabilizing source and mixed voltage stabilizing source.
Disclosure of Invention
In order to solve the technical problems, the application provides a voltage stabilizing source circuit with wide input range and low power consumption and electronic equipment. The voltage stabilizing source circuit can work in a wider input power supply voltage range.
Specifically, the technical scheme of the application is as follows:
in a first aspect, the present application discloses a voltage stabilizing source circuit with wide input range and low power consumption, comprising:
the first branch module, the operational amplifier module and the output voltage detection module;
the first branch module is used for being connected with an external power supply voltage and generating a first voltage input into the operational amplifier module; limiting a maximum value of the first voltage within a range of a zener reverse bias voltage using a clipping characteristic of a zener diode when the external power supply voltage is higher than a reference power supply voltage;
the operational amplifier module is used for receiving the first voltage and generating an output voltage; clamping the output voltage to the magnitude of the first voltage through a negative feedback structure of an operational amplifier when the external power supply voltage is higher than the reference power supply voltage;
the output voltage detection module is used for sending a control signal to the operational amplifier module when the output voltage is lower than a target output voltage, and the control signal is used for controlling a fourth high-voltage MOS tube in the operational amplifier module to be in a full-conduction state;
and the operational amplifier module is also used for generating output voltage through the fourth high-voltage MOS tube in the full-conduction state after receiving the control signal.
In some embodiments, the first branching module includes a first resistor, a second resistor, a first high-voltage MOS transistor, a first low-voltage MOS transistor, a second low-voltage MOS transistor, a third low-voltage MOS transistor, and the zener diode;
the first end of the first resistor is connected with an external power supply voltage, the second end of the first resistor is connected with the first end of the second resistor, and the second end of the second resistor is connected with the drain electrode of the first high-voltage MOS tube; the source electrode of the first high-voltage MOS tube is connected with the source electrode of the first low-voltage MOS tube; the drain electrode of the first low-voltage MOS tube is connected with the source electrode of the second low-voltage MOS tube, the drain electrode of the second low-voltage MOS tube is connected with the drain electrode of the third low-voltage MOS tube, and the source electrode of the third low-voltage MOS tube is grounded;
the grid electrodes of the first high-voltage MOS tube, the first low-voltage MOS tube, the second low-voltage MOS tube and the third low-voltage MOS tube are respectively communicated with the drain electrodes of the first high-voltage MOS tube, the first low-voltage MOS tube, the second low-voltage MOS tube and the third low-voltage MOS tube;
the cathode of the zener diode is connected with the second end of the first resistor, and the anode of the zener diode is grounded;
the grid of the first high-voltage MOS tube is the output end of the first branch module and is connected with the input end of the operational amplifier module.
In some embodiments, the operational amplifier module comprises: the second high-voltage MOS transistor, the third high-voltage MOS transistor, the fourth high-voltage MOS transistor, the third resistor, the fourth resistor and the first switch;
the gate of the second high-voltage MOS tube is an input end of the operational amplifier module and is connected with an output end of the first branch module;
the first end of the fourth resistor is connected with an external power supply voltage, the second end of the fourth resistor is connected with the drain electrode of the second high-voltage MOS tube, the source electrode of the second high-voltage MOS tube is connected with the first end of the third resistor, and the second end of the third resistor is grounded;
the source electrode of the fourth high-voltage MOS tube is connected with an external power supply voltage, the drain electrode of the fourth high-voltage MOS tube is connected with the drain electrode of the third high-voltage MOS tube, the source electrode of the third high-voltage MOS tube is connected with the first end of the third resistor, and the grid electrode of the third high-voltage MOS tube is connected with the drain electrode of the third high-voltage MOS tube; the drain electrode of the third high-voltage MOS tube is the output end of the operational amplifier module;
the first end of the first switch is connected with the second end of the fourth resistor, and the second end of the first switch is connected with the grid electrode of the fourth high-voltage MOS tube.
In some embodiments, the output voltage detection module includes: a ninth high-voltage MOS tube, a seventh low-voltage MOS tube, an eighth low-voltage MOS tube, a ninth low-voltage MOS tube, a tenth low-voltage MOS tube, a fifth resistor, a first phase-inversion amplifier and a second phase-inversion amplifier;
the source electrode of the seventh low-voltage MOS tube is connected with the output voltage, the drain electrode of the seventh low-voltage MOS tube is connected with the drain electrode of the ninth low-voltage MOS tube, the source electrode of the ninth low-voltage MOS tube is connected with the first end of the fifth resistor, and the second end of the fifth resistor is grounded; the grid electrodes of the seventh low-voltage MOS tube and the ninth low-voltage MOS tube are respectively communicated with the drain electrodes of the seventh low-voltage MOS tube and the ninth low-voltage MOS tube;
the source electrode of the eighth low-voltage MOS tube is connected with the output voltage, the drain electrode of the eighth low-voltage MOS tube is connected with the drain electrode of the tenth low-voltage MOS tube, and the source electrode of the tenth low-voltage MOS tube is grounded; the grid electrode of the eighth low-voltage MOS tube is connected with the grid electrode of the seventh low-voltage MOS tube, and the grid electrode of the tenth low-voltage MOS tube is connected with the first end of the fifth resistor;
the first end of the first phase-inverting amplifier is connected with the drain electrode of the eighth low-voltage MOS tube, the second end of the first phase-inverting amplifier is connected with the first end of the second phase-inverting amplifier, and the second end of the second phase-inverting amplifier is connected with the grid electrode of the ninth high-voltage MOS tube; and the source electrode of the ninth high-voltage MOS tube is grounded, and the drain electrode of the ninth high-voltage MOS tube is connected with the voltage Vbp.
In some embodiments, if the output voltage is lower than the target output voltage, the pull-down current of the tenth low-voltage MOS transistor is lower than the current mirrored by the eighth low-voltage MOS transistor, and the drain terminal of the tenth low-voltage MOS transistor generates a high-level signal; the control signal obtained after passing through the first phase inversion amplifier and the second phase inversion amplifier is a high-level signal;
the ninth high-voltage MOS tube is in a conducting state, the drain voltage vbp of the ninth high-voltage MOS tube is pulled down to the ground, at the moment, the fourth high-voltage MOS tube is in a full-conducting state, and the output voltage is pulled up to the magnitude of the external power supply voltage.
In some embodiments, if the output voltage is higher than the target output voltage, the pull-down current of the tenth low-voltage MOS transistor is higher than the current mirrored by the eighth low-voltage MOS transistor, and the drain terminal of the tenth low-voltage MOS transistor generates a low-level signal; the control signal obtained after passing through the first phase inversion amplifier and the second phase inversion amplifier is a low-level signal;
and the ninth high-voltage MOS transistor is in a cut-off state, and the output voltage is generated through negative feedback of the operational amplifier module.
In some embodiments, the wide input range low power consumption regulated source circuit further comprises a level shifter module;
the level shifter module is connected with the second end of the second phase-inverting amplifier and is used for controlling the first switch to be in an off state when the control signal is a high-level signal.
In a second aspect, the present application further discloses an electronic device, where the electronic device includes a voltage stabilizing source circuit with a wide input range and low power consumption in any one of the foregoing embodiments.
Compared with the prior art, the application has at least one of the following beneficial effects:
1. the application expands the range of the external power supply voltage input into the voltage stabilizing circuit. When the voltage of the input power supply is lower, the output voltage detection module outputs a control signal to control the grid voltage of the fourth high-voltage MOS tube in the operational amplifier module to be pulled down to the ground, so that an output voltage signal is generated, and when the voltage of the input power supply is higher, the negative feedback circuit formed by the operational amplifier module generates the output voltage. Thus, the voltage stabilizing source circuit can work in a wider external power supply voltage range.
2. In the application, the level shifter module is connected with the second end of the second phase-inversion amplifier and is used for controlling the first switch to be in an off state when the control signal is a high-level signal, so that the static power consumption of part of branches can be reduced.
Drawings
The above features, technical features, advantages and implementation of the present application will be further described in the following description of preferred embodiments with reference to the accompanying drawings in a clear and easily understood manner.
FIG. 1 is a block diagram illustrating one embodiment of a wide input range low power consumption regulated supply circuit according to the present application;
FIG. 2 is a circuit diagram of a regulated power supply circuit according to the present application;
FIG. 3 is a circuit diagram of a voltage regulator circuit of the prior art;
FIG. 4 is a circuit block diagram of an operational amplifier module in a regulated supply circuit according to the present application;
FIG. 5 is a circuit diagram of an output voltage detection module in a regulated voltage supply circuit according to the present application;
FIG. 6 is a block diagram of another embodiment of a voltage regulator circuit with wide input range and low power consumption according to the present application;
FIG. 7 is a schematic diagram of a voltage regulator circuit according to the present application.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, techniques, etc., in order to provide a thorough understanding of the embodiments of the present application. It will be apparent, however, to one skilled in the art that the present application may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present application with unnecessary detail.
It should be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
For simplicity of the drawing, only the parts relevant to the application are schematically shown in each drawing, and they do not represent the actual structure thereof as a product. Additionally, in order to simplify the drawing for ease of understanding, components having the same structure or function in some of the drawings are shown schematically with only one of them, or only one of them is labeled. Herein, "a" means not only "only this one" but also "more than one" case.
It should be further understood that the term "and/or" as used in the present specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes such combinations.
In this context, it should be noted that the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, unless explicitly stated or limited otherwise; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In addition, in the description of the present application, the terms "first," "second," and the like are used merely to distinguish between descriptions and are not to be construed as indicating or implying relative importance.
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following description will explain the specific embodiments of the present application with reference to the accompanying drawings. It is evident that the drawings in the following description are only examples of the application, from which other drawings and other embodiments can be obtained by a person skilled in the art without inventive effort.
Referring to fig. 1 of the specification, an embodiment of a voltage stabilizing source circuit with wide input range and low power consumption provided by the present application includes: the first branch module 10, the operational amplifier module 20 and the output voltage detection module 30.
The first branch module 10 is configured to be connected to an external power voltage, and generate a first voltage input to the operational amplifier module; limiting a maximum value of the first voltage within a range of a zener reverse bias voltage using a clipping characteristic of a zener diode when the external power supply voltage is higher than a reference power supply voltage;
the operational amplifier module 20 is configured to receive the first voltage and generate an output voltage; clamping the output voltage to the magnitude of the first voltage through a negative feedback structure of an operational amplifier when the external power supply voltage is higher than the reference power supply voltage;
the output voltage detection module 30 is configured to send a control signal to the operational amplifier module when the output voltage is lower than a target output voltage, where the control signal is used to control a fourth high-voltage MOS transistor in the operational amplifier module to be in a fully-on state;
the operational amplifier module 20 is further configured to generate an output voltage through the fourth high-voltage MOS transistor in the fully-on state after receiving the control signal.
Specifically, reference may be made to fig. 2 of the specification, in which vddh is an externally input power supply voltage ranging from 2.5V to 100V; vddl is the output voltage of the operational amplifier module (op amp module for short); vssl represents ground. In this embodiment, the voltage stabilizing source circuit with a wide input range and low power consumption requires that the maximum value of the output power supply is not more than 5.5V of the withstand voltage value of the later-stage circuit, and meanwhile, the larger the minimum value of the output power supply is, the better the larger the minimum value of the output power supply is, namely, the smaller fluctuation of the output voltage range is ensured. And HV (high voltage) is marked behind part of the MOS tube devices, which means that the MOS tube is a high-voltage MOS tube.
The leftmost branch is the first branch module 10, the operational amplifier IO is the operational amplifier module 20, and the output voltage detection module 30 is connected between the output voltage and the ground after being connected to the first branch module 10.
Fig. 3 is a circuit configuration diagram of a common voltage stabilizing source circuit in the prior art, in which the minimum value of the output power supply voltage vdd is limited in the following two aspects: in the first aspect, under the low temperature slow corner process (ss corner), no current exists in the 1 branch, the output voltage vdd is limited by the threshold voltage of the high voltage tube M2 in fig. 3, and the output voltage is about vdd h-vth_hv and is greatly affected by leakage. In a second aspect, under the high temperature fast corner process (ff corner), there is less power consumption of 1 branch, on the order of tens nA, the tube is in the subthreshold region and the output voltage is around 3 x vgs_min.
Referring to fig. 2 of the specification, in the prior art, the maximum value of the output voltage vdd is generated by the gate-source voltages vgs of three tubes M12 to M14, and the output voltage vdd can be ensured to be within 5.5V when the external power supply voltage vdd=100V by reasonably adjusting the size. If the voltage stabilizing source circuit shown in fig. 2 is used, compared with the first aspect of the prior art, the output voltage vdd is composed of the gate-source voltages vg of the four tubes of the high-voltage tube M1 and the low-voltage tubes M12-M14, and the operational amplifier module 20 is of a negative feedback structure, so that the output voltage vdd signal is not limited by the threshold voltage of the high-voltage tube M1; in order to solve the second defect in the prior art, the application detects the vdd signal through the output voltage detection module, when the vdd signal is lower than a certain value, the power tube is in a full-open state to improve vdd, in fig. 2, the output vdd is generated by a high-voltage tube M1 and low-voltage tubes M12-M14, and 4 vgs are easy to exceed the voltage withstand of a later-stage circuit during high voltage, so that the zener diode D1 is used for limiting, the zener reverse bias voltage is in the range of 5.5-6.2V, and a specific implementation of a complete circuit schematic diagram is shown in fig. 7.
In another embodiment of the voltage stabilizing source circuit with a wide input range and low power consumption of the present application, based on the above embodiment, the first branch module includes a first resistor R1, a second resistor R2, a first high-voltage MOS transistor M1 (HV), a first low-voltage MOS transistor M12, a second low-voltage MOS transistor M13, and a third low-voltage MOS transistor M14, which are sequentially connected.
The first end of the first resistor R1 is connected to the external power voltage Vddh, and the source of the third low-voltage MOS transistor M14 is grounded. The gate of the first high-voltage MOS transistor M1 (HV) is the output end of the first branch module, and is connected to the input end of the operational amplifier module 20.
The first branch module further comprises a zener diode D1, the negative electrode of the zener diode D1 is connected with the second end of the first resistor, and the positive electrode of the zener diode is grounded.
Specifically, as shown in fig. 2 of the specification, fig. 2 is a circuit structure diagram of the voltage stabilizing source circuit provided by the application. As can be seen from fig. 2, the first end of the first resistor R1 is connected to an external power supply voltage, the second end of the first resistor R1 is connected to the first end of the second resistor R2, and the second end of the second resistor R2 is connected to the drain of the first high-voltage MOS transistor M1 (HV). The source electrode of the first high-voltage MOS tube M1 (HV) is connected with the source electrode of the first low-voltage MOS tube M12. The drain electrode of the first low-voltage MOS tube M12 is connected with the source electrode of the second low-voltage MOS tube M13, the drain electrode of the second low-voltage MOS tube M13 is connected with the drain electrode of the third low-voltage MOS tube M14, and the source electrode of the third low-voltage MOS tube M14 is grounded.
The grid electrodes of the first high-voltage MOS tube M1 (HV), the first low-voltage MOS tube M12, the second low-voltage MOS tube M13 and the third low-voltage MOS tube M14 are respectively communicated with the drain electrodes of the first high-voltage MOS tube M1 (HV), the second low-voltage MOS tube M13 and the third low-voltage MOS tube M14.
The first high-voltage MOS tube M1 (HV) and the third low-voltage MOS tube M14 are P-channel MOS tubes. The first low-voltage MOS tube M12 and the second low-voltage MOS tube M13 are N-channel MOS tubes.
More preferably, the zener diode D1 is configured to control the voltage input to the first branch module to be maintained in a range of zener reverse bias voltage.
Specifically, a Zener diode (Zener diode) is a special diode that can reverse breakdown (reverse breakdown) of current inside the diode when the reverse voltage reaches a certain value, and keep the voltage stable. This characteristic is called "Zener breakdown" (Zener breakdown), and thus such a diode is also called "Zener breakdown diode". The zener reverse bias voltage (Zener breakdown voltage) is a voltage value at which zener breakdown occurs when the zener diode is reverse biased. When the reverse voltage exceeds the zener reverse bias voltage, reverse breakdown occurs inside the zener diode, and the current increases sharply while maintaining a stable reverse voltage. This reverse breakdown phenomenon is a special mode of operation of zener diodes and is the basis for their application in voltage regulation and reference circuits.
In another embodiment of the voltage stabilizing source circuit with wide input range and low power consumption, as shown in fig. 4 of the specification, fig. 4 is a circuit structure diagram of an operational amplifier module in the voltage stabilizing source circuit provided by the application.
On the basis of the above embodiment, the operational amplifier module is a negative feedback structure, including: the high-voltage MOS transistor comprises a second high-voltage MOS transistor M2 (HV), a third high-voltage MOS transistor M3 (HV), a fourth high-voltage MOS transistor M4 (HV), a third resistor R3, a fourth resistor R4 and a first switch SW.
The output of the first branch module (that is, the gate of the first high-voltage MOS transistor) is connected to the gate of the second high-voltage MOS transistor M2 (HV).
The first end of the fourth resistor R4 is connected with an external power supply voltage, the second end of the fourth resistor R4 is connected with the drain electrode of the second high-voltage MOS tube M2 (HV), the source electrode of the second high-voltage MOS tube M2 (HV) is connected with the first end of the third resistor R3, and the second end of the third resistor R3 is grounded.
The source electrode of the fourth high-voltage MOS tube M4 (HV) is connected with an external power supply voltage, the drain electrode of the fourth high-voltage MOS tube M4 (HV) is connected with the drain electrode of the third high-voltage MOS tube M3 (HV), the source electrode of the third high-voltage MOS tube M3 (HV) is connected with the first end of the third resistor, and the grid electrode of the third high-voltage MOS tube M3 (HV) is connected with the drain electrode of the third high-voltage MOS tube M3 (HV); the drain electrode of the third high-voltage MOS tube M3 (HV) is the output end of the operational amplifier module.
In another embodiment of the device of the present application, on the basis of any one of the embodiments above, a gate voltage of the second high-voltage MOS transistor is Vb. And the grid voltage of the fourth high-voltage MOS transistor is Vbp. And the grid voltage of the third high-voltage MOS tube is output voltage.
In another embodiment of the voltage stabilizing source circuit with wide input range and low power consumption of the present application, based on the above embodiment, the output voltage detecting module 30, as shown in fig. 5, includes: ninth high-voltage MOS transistor M9 (HV), seventh low-voltage MOS transistor M17, eighth low-voltage MOS transistor M18, ninth low-voltage MOS transistor M19, tenth low-voltage MOS transistor M20, fifth resistor R5, first inverting amplifier I0, second inverting amplifier I1.
The source electrode of the seventh low-voltage MOS transistor M17 is connected to the output voltage Vddl, the drain electrode of the seventh low-voltage MOS transistor M17 is connected to the drain electrode of the ninth low-voltage MOS transistor M19, the source electrode of the ninth low-voltage MOS transistor M19 is connected to the first end of the fifth resistor R5, and the second end of the fifth resistor R5 is grounded. The grid electrodes of the seventh low-voltage MOS tube M17 and the ninth low-voltage MOS tube M19 are respectively communicated with the drain electrodes of the seventh low-voltage MOS tube M17 and the ninth low-voltage MOS tube M19.
The source electrode of the eighth low-voltage MOS transistor M18 is connected to the output voltage Vddl, the drain electrode of the eighth low-voltage MOS transistor M18 is connected to the drain electrode of the tenth low-voltage MOS transistor M20, and the source electrode of the tenth low-voltage MOS transistor M20 is grounded. The gate of the eighth low-voltage MOS transistor M18 is connected to the gate of the seventh low-voltage MOS transistor M17, and the gate of the tenth low-voltage MOS transistor M20 is connected to the first end of the fifth resistor R5.
The first end of the first inverting amplifier I0 is connected with the drain electrode of the eighth low-voltage MOS tube M18, the second end of the first inverting amplifier I0 is connected with the first end of the second inverting amplifier I1, and the second end of the second inverting amplifier I1 is connected with the grid electrode of the ninth high-voltage MOS tube M9 (HV). The source electrode of the ninth high-voltage MOS transistor M9 (HV) is grounded, and the drain electrode of the ninth high-voltage MOS transistor M9 (HV) is connected to the voltage Vbp.
Specifically, as shown in fig. 5 of the specification, fig. 5 is a circuit structure diagram of an output voltage detection module in the voltage stabilizing source circuit provided by the application. The output voltage detection module 30 (also called Vddl voltage detection module) operates as follows:
when vdd <3 x vgs, the pull-down current of M20 is lower than the current mirrored by M18, the output signal O is high, the signal ctrl after passing through the two inverters is high, at this time, M9 (HV) is turned on, pull-down the vbp signal to ground, the power transistor M4 is in a fully conductive state, and pull-up the output vdd to vdd h.
When vdd >3 x vgs, the pull-down current of M20 is higher than the current mirrored by M18, the output signal O is low, the signal ctrl after passing through the two inverters is low, at this time M9 (HV) is inactive, and the output voltage vdd is generated by negative feedback of the op amp.
In another implementation manner of this embodiment, if the output voltage is lower than the target output voltage range, the pull-down current of the tenth low-voltage MOS transistor M20 is lower than the current mirrored by the eighth low-voltage MOS transistor M18, and the tenth low-voltage MOS transistor M20 generates a high-level signal. The obtained control signal after passing through the first inverting amplifier I0 and the second inverting amplifier I1 is a high level signal.
The ninth high-voltage MOS transistor M9 (HV) is in a conducting state, the drain voltage vbp of the ninth high-voltage MOS transistor M9 (HV) is pulled down to ground, at this time, the fourth high-voltage MOS transistor M4 (HV) is in a full-conducting state, and the output voltage is pulled up to the external power supply voltage.
If the output voltage is higher than the target output voltage, the pull-down current of the tenth low-voltage MOS transistor M20 is higher than the current mirrored by the eighth low-voltage MOS transistor M18, and the tenth low-voltage MOS transistor M20 generates a low-level signal. The obtained control signal after passing through the first inverting amplifier I0 and the second inverting amplifier I1 is a low level signal.
At this time, the ninth high voltage MOS transistor M9 (HV) is in an off state, and the output voltage is generated by negative feedback of the operational amplifier module.
In another embodiment of the voltage stabilizing source circuit with wide input range and low power consumption provided by the present application, on the basis of the embodiment of the voltage stabilizing source circuit, as shown in fig. 6 of the specification, the voltage stabilizing source circuit with wide input range and low power consumption further includes: a level shifter module 40.
The level shifter module 40 is connected to the second terminal of the second inverting amplifier I1, and is configured to control the first switch SW to be in an off state when the control signal is a high level signal.
Specifically, reference may be made to fig. 7 of the specification, and fig. 7 is a complete schematic diagram of a voltage regulator circuit provided in the present application. In this embodiment, through the tenth high-voltage MOS transistor M10 (HV), the level converter from the low-voltage domain to the high-voltage domain formed by the eleventh high-voltage MOS transistor M11 (HV) and the sixth resistor R6, when the ctrl signal is high, the ninth high-voltage MOS transistor M9 (HV) is controlled to pull down the gate voltage vbp of the power transistor M4 (HV), while the switch SW is in an off state, otherwise, a branch where the second high-voltage MOS transistor M2 (HV), the third high-voltage MOS transistor M3 (HV), the ninth high-voltage MOS transistor M9 (HV) or the fourth resistor R4 and the ninth high-voltage MOS transistor M9 (HV) are located may have larger static power consumption.
Based on the same conception, the application also discloses electronic equipment, which comprises the voltage stabilizing source circuit with wide input range and low power consumption in any one of the embodiments. The voltage stabilizing source circuit with wide input range and low power consumption and the electronic equipment have the same technical conception, and the technical details of the two embodiments can be mutually applicable, so that repetition is reduced, and the repeated description is omitted.
While preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the application.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present application without departing from the spirit or scope of the application. Thus, it is intended that the present application also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (7)
1. A voltage stabilizing source circuit with wide input range and low power consumption, comprising: the first branch module, the operational amplifier module and the output voltage detection module;
the first branch module is used for being connected with an external power supply voltage and generating a first voltage input into the operational amplifier module; limiting a maximum value of the first voltage within a range of a zener reverse bias voltage using a clipping characteristic of a zener diode when the external power supply voltage is higher than a reference power supply voltage;
the operational amplifier module is used for receiving the first voltage and generating an output voltage; clamping the output voltage to the magnitude of the first voltage through a negative feedback structure of an operational amplifier when the external power supply voltage is higher than the reference power supply voltage;
the operational amplifier module includes: the second high-voltage MOS transistor, the third high-voltage MOS transistor, the fourth high-voltage MOS transistor, the third resistor, the fourth resistor and the first switch;
the gate of the second high-voltage MOS tube is an input end of the operational amplifier module and is connected with an output end of the first branch module;
the first end of the fourth resistor is connected with an external power supply voltage, the second end of the fourth resistor is connected with the drain electrode of the second high-voltage MOS tube, the source electrode of the second high-voltage MOS tube is connected with the first end of the third resistor, and the second end of the third resistor is grounded;
the source electrode of the fourth high-voltage MOS tube is connected with an external power supply voltage, the drain electrode of the fourth high-voltage MOS tube is connected with the drain electrode of the third high-voltage MOS tube, the source electrode of the third high-voltage MOS tube is connected with the first end of the third resistor, and the grid electrode of the third high-voltage MOS tube is connected with the drain electrode of the third high-voltage MOS tube; the drain electrode of the third high-voltage MOS tube is the output end of the operational amplifier module;
the first end of the first switch is connected with the second end of the fourth resistor, and the second end of the first switch is connected with the grid electrode of the fourth high-voltage MOS tube;
the output voltage detection module is used for sending a control signal to the operational amplifier module when the output voltage is lower than a target output voltage, and the control signal is used for controlling a fourth high-voltage MOS tube in the operational amplifier module to be in a full-conduction state;
and the operational amplifier module is also used for generating output voltage through the fourth high-voltage MOS tube in the full-conduction state after receiving the control signal.
2. The wide input range low power consumption regulated power supply circuit of claim 1, wherein:
the first branch module comprises a first resistor, a second resistor, a first high-voltage MOS tube, a first low-voltage MOS tube, a second low-voltage MOS tube, a third low-voltage MOS tube and a zener diode;
the first end of the first resistor is connected with an external power supply voltage, the second end of the first resistor is connected with the first end of the second resistor, and the second end of the second resistor is connected with the drain electrode of the first high-voltage MOS tube; the source electrode of the first high-voltage MOS tube is connected with the source electrode of the first low-voltage MOS tube; the drain electrode of the first low-voltage MOS tube is connected with the source electrode of the second low-voltage MOS tube, the drain electrode of the second low-voltage MOS tube is connected with the drain electrode of the third low-voltage MOS tube, and the source electrode of the third low-voltage MOS tube is grounded;
the grid electrodes of the first high-voltage MOS tube, the first low-voltage MOS tube, the second low-voltage MOS tube and the third low-voltage MOS tube are respectively communicated with the drain electrodes of the first high-voltage MOS tube, the first low-voltage MOS tube, the second low-voltage MOS tube and the third low-voltage MOS tube;
the cathode of the zener diode is connected with the second end of the first resistor, and the anode of the zener diode is grounded;
the grid of the first high-voltage MOS tube is the output end of the first branch module and is connected with the input end of the operational amplifier module.
3. The wide input range low power consumption regulated power supply circuit of claim 1, wherein said output voltage detection module comprises: a ninth high-voltage MOS tube, a seventh low-voltage MOS tube, an eighth low-voltage MOS tube, a ninth low-voltage MOS tube, a tenth low-voltage MOS tube, a fifth resistor, a first phase-inversion amplifier and a second phase-inversion amplifier;
the source electrode of the seventh low-voltage MOS tube is connected with the output voltage, the drain electrode of the seventh low-voltage MOS tube is connected with the drain electrode of the ninth low-voltage MOS tube, the source electrode of the ninth low-voltage MOS tube is connected with the first end of the fifth resistor, and the second end of the fifth resistor is grounded; the grid electrodes of the seventh low-voltage MOS tube and the ninth low-voltage MOS tube are respectively communicated with the drain electrodes of the seventh low-voltage MOS tube and the ninth low-voltage MOS tube;
the source electrode of the eighth low-voltage MOS tube is connected with the output voltage, the drain electrode of the eighth low-voltage MOS tube is connected with the drain electrode of the tenth low-voltage MOS tube, and the source electrode of the tenth low-voltage MOS tube is grounded; the grid electrode of the eighth low-voltage MOS tube is connected with the grid electrode of the seventh low-voltage MOS tube, and the grid electrode of the tenth low-voltage MOS tube is connected with the first end of the fifth resistor;
the first end of the first phase-inverting amplifier is connected with the drain electrode of the eighth low-voltage MOS tube, the second end of the first phase-inverting amplifier is connected with the first end of the second phase-inverting amplifier, and the second end of the second phase-inverting amplifier is connected with the grid electrode of the ninth high-voltage MOS tube; and the source electrode of the ninth high-voltage MOS tube is grounded, and the drain electrode of the ninth high-voltage MOS tube is connected with the voltage Vbp.
4. A wide input range low power consumption regulated power supply circuit as claimed in claim 3, wherein:
if the output voltage is lower than the target output voltage, the pull-down current of the tenth low-voltage MOS tube is lower than the current obtained by mirroring the eighth low-voltage MOS tube, and the drain end of the tenth low-voltage MOS tube generates a high-level signal; the control signal obtained after passing through the first phase inversion amplifier and the second phase inversion amplifier is a high-level signal;
the ninth high-voltage MOS tube is in a conducting state, the drain voltage vbp of the ninth high-voltage MOS tube is pulled down to the ground, at the moment, the fourth high-voltage MOS tube is in a full-conducting state, and the output voltage is pulled up to the magnitude of the external power supply voltage.
5. A wide input range low power consumption regulated power supply circuit as claimed in claim 3, wherein:
if the output voltage is higher than the target output voltage, the pull-down current of the tenth low-voltage MOS tube is higher than the current obtained by mirroring the eighth low-voltage MOS tube, and the drain end of the tenth low-voltage MOS tube generates a low-level signal; the control signal obtained after passing through the first phase inversion amplifier and the second phase inversion amplifier is a low-level signal;
and the ninth high-voltage MOS transistor is in a cut-off state, and the output voltage is generated through negative feedback of the operational amplifier module.
6. A wide input range low power consumption regulated power supply circuit as claimed in claim 4 or 5, further comprising a level shifter module;
the level shifter module is connected with the second end of the second phase-inverting amplifier and is used for controlling the first switch to be in an off state when the control signal is a high-level signal.
7. An electronic device comprising a wide input range low power consumption regulated power supply circuit as claimed in any one of claims 1 to 6.
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| CN202311006607.6A CN116736924B (en) | 2023-08-11 | 2023-08-11 | Voltage stabilizing source circuit with wide input range and low power consumption and electronic equipment |
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| CN116736924A (en) | 2023-09-12 |
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