TWI605106B - Etchant, etching method of semiconductor substrate and method for manufacturing semiconductor device - Google Patents

Description

Etching liquid, etching method of semiconductor substrate, and manufacturing of semiconductor element Method

The present invention relates to a method of etching a semiconductor substrate and a method of manufacturing a semiconductor device.

Micro-refinement of semiconductor components. Diversification is growing and its processing methods are involved in many aspects for each component structure or manufacturing step. In terms of etching of the substrate, development of both dry etching (Dry Etching) and wet etching (Wet Etching) was carried out, and various chemical liquids or processing conditions were proposed depending on the type or structure of the substrate material.

Among them, when fabricating a component structure such as a complementary metal oxide semiconductor (CMOS) or a dynamic random access memory (DRAM), it is important to precisely etch a predetermined material. One of the corresponding techniques is wet etching using a chemical liquid. For example, when fabricating a substrate having a circuit wiring or a metal electrode material, or a barrier layer, a hard mask, or the like in a micro transistor circuit, precise etching is required. machining. However, regarding substrates having various metal compounds, there is no needle yet. The etching conditions or chemical solutions suitable for each of them are sufficiently studied. In this case, it is considered as a manufacturing problem to efficiently remove a hard mask applied to the element substrate, and specifically, an example of research on a chemical solution for etching titanium nitride (TiN) (see Patent Document 1 to Patent Document 7).

[Previous Technical Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-257191

[Patent Document 2] Japanese Patent Laid-Open Publication No. 2008-547202

[Patent Document 3] Japanese Patent Laid-Open Publication No. 2009-021516

[Patent Document 4] Japanese Patent Laid-Open Publication No. 2005-097715

[Patent Document 5] Japanese Patent Laid-Open Publication No. 2007-067367

[Patent Document 6] Japanese Patent Laid-Open Publication No. 2010-10273

[Patent Document 7] Japanese Patent Laid-Open Publication No. 2008-536312

In the above documents 6 and 7, an etching liquid in which tetramethylammonium hydroxide and hydrogen peroxide are mixed is disclosed. However, according to the confirmation by the inventors of the present invention, since only the etching liquid of the above-described formulation is used, the surface of the TiN layer after etching becomes uneven, and remains after etching (etching unevenness). s reason. In view of the stringent requirements of the semiconductor industry in recent years, it is desirable to improve the unevenness of such a substrate surface. In addition, it is also desired to achieve uniformity of the metal surface provided at the same time after etching.

Accordingly, it is an object of the present invention to provide a method for the inclusion of titanium nitride (TiN). When the first layer is etched, an etching method for uniformizing the surface of the TiN layer and the metal layer after etching, an etching solution used, and a method of manufacturing a semiconductor device using the same can be realized.

The above problems are solved by the following methods.

[1] An etching method for treating a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, wherein a surface oxygen content in the first layer is selected to be 0.1 mol The substrate having % to 10% by mole of the ear was subjected to an etching solution containing an organic cerium compound and an oxidizing agent on the substrate to remove the first layer.

[2] The etching method according to [1], wherein the transition metal is selected from the group consisting of cobalt (Co), nickel (Ni), copper (Cu), silver (Ag), tantalum (Ta), hafnium (Hf), tungsten ( W), platinum (Pt), and gold (Au).

[3] The etching method according to [1] or [2] wherein the organic hydrazine compound is a quaternary phosphonium or a salt thereof.

[4] The etching method according to any one of [1] to [3] wherein the oxidizing agent is nitric acid or hydrogen peroxide.

[5] The etching method according to any one of [1] to [4] wherein the etching rate (R1) of the first layer is 200 Å/min or more and 500 Å/min or less.

[6] The etching method according to any one of [1] to [5] wherein the etching solution further contains at least one surface selected from the group consisting of nitrogen-containing organic compounds, aromatic compounds, and oxygen-containing organic compounds. Homogenizer.

[7] The etching method according to [6], wherein the surface homogenizing agent comprises a compound represented by any one of the following formulas (I) to (IX): [Chemical Formula 1]

(R ¹ to R ³⁰ each independently represent a hydrogen atom or a substituent; in this case, each adjacent R ¹ to R ³⁰ may be linked or condensed to form a cyclic structure; A represents a hetero atom; wherein, A is In the case of divalent, R ¹ , R ³ , R ⁶ , R ¹¹ , R ²⁴ , R ²⁸ ) substituted on A are not present.

[8] The etching method according to [6], wherein the surface homogenizing agent is at least one selected from the group consisting of an alcohol compound solvent having 2 to 15 carbon atoms and an ether compound solvent having 2 to 15 carbon atoms.

[9] The etching method according to any one of [6] to [8], wherein the surface homogenizing agent is contained in a range of 0.01% by mass or more and 70% by mass or less.

[10] The etching method according to any one of [1] to [9], wherein the organic cerium compound is contained in an amount of 0.01% by mass or more and 6% by mass or less.

[11] The etching method according to any one of [1] to [10] wherein the oxidizing agent is contained in an amount of 1% by mass or more and 40% by mass or less.

[12] The etching method according to any one of [1] to [11] wherein the etching liquid has a pH of 6.5 to 11.

[13] The etching method according to any one of [1] to [12] wherein the thickness of the first layer is from 0.005 μm to 0.3 μm.

[14] An etching solution for having a first layer containing titanium nitride (TiN) and The etching liquid for treating the substrate of the second layer containing the transition metal is applied to a substrate having a surface oxygen content of 0.1 mol% to 10 mol% in the first layer, and contains an organic cerium compound and an oxidizing agent.

[15] The etching solution according to [14], which contains 0.01% by mass or more and 6% by mass or less of the organic cerium compound.

[16] The etching liquid according to [14] or [15], which contains 1% by mass or more and 40% by mass or less of an oxidizing agent.

[17] The etching solution according to any one of [14] to [16] which has a pH of 6.5 to 11.

[18] The etching solution according to any one of [14] to [17] further comprising at least one surface homogenization selected from the group consisting of a nitrogen-containing organic compound, an aromatic compound, and an oxygen-containing organic compound. Agent.

[19] A method of producing a semiconductor device, which comprises removing a first layer containing titanium nitride (TiN) by an etching method according to any one of [1] to [13], and manufacturing the remaining substrate Semiconductor component.

According to the method of the present invention, when the first layer containing TiN is etched, the surface uniformity of the TiN layer after etching can be achieved (the etching unevenness is suppressed), and the metal layer (the second layer) can also be etched. The surface after the surface is homogenized.

The above and other features and advantages of the present invention will be made apparent by reference to the appended claims.

1‧‧‧TiN layer (1st floor)

2‧‧‧SiON layer (3rd layer (1))

3‧‧‧SiOC layer (3rd layer (2))

4‧‧‧Cu/W layer (layer 2)

5‧‧‧through hole

10, 20‧‧‧ substrate

11‧‧‧Reaction container

12‧‧‧Rotating table

13‧‧‧Spray outlet

14‧‧ ‧ Confluence

A, B‧‧‧ liquid

‧‧‧Width

Fc, fd‧‧‧ flow path

M‧‧‧Rotary Drive Department

R‧‧‧ direction

S‧‧‧Semiconductor substrate

t‧‧‧Mobile track

1 is a schematic view showing a semiconductor base in an embodiment of the present invention A cross-sectional view of a manufacturing step of the board (before etching).

FIG. 2 is a cross-sectional view showing an example of a manufacturing process (after etching) of a semiconductor substrate according to an embodiment of the present invention.

Fig. 3 is a view showing a configuration of a part of a wet etching apparatus according to a preferred embodiment of the present invention.

4 is a plan view schematically showing a movement trajectory of a nozzle with respect to a semiconductor substrate in an embodiment of the present invention.

First, a preferred embodiment of the etching step of the etching method of the present invention will be described based on FIGS. 1 and 2.

[etching step]

FIG. 1 is a view showing a semiconductor substrate before etching. The production example of the present embodiment is a substrate on which a TiN layer 1 is formed on a silicon wafer (not shown), with the SiOC layer 3 and the SiON layer 2 as a specific third layer. At this time, the through hole 5 has been formed in the composite layer, and a second layer (metal layer) 4 containing metal is formed at the bottom of the through hole 5. The etching solution (not shown) in the present embodiment is applied to the substrate 10 in this state to remove the TiN layer. As a result, as shown in FIG. 2, the substrate 20 in a state in which the TiN film was removed can be obtained. Needless to say, the present invention or a preferred embodiment thereof is preferably etched as shown in the drawing, but the residual of the TiN layer or the slight corrosion of the second layer may be appropriately allowed depending on the required quality of the semiconductor element to be manufactured, and the like. The invention is not to be construed as being limited by the description.

In addition, when referred to as a germanium substrate or a semiconductor substrate, or simply as a substrate, it is used to mean not only a germanium wafer but also a substrate structure in which a circuit structure is applied. body. The member of the substrate refers to a member constituting the above-defined ruthenium substrate, and may include one material or a plurality of materials. There is a case where the processed semiconductor substrate is differently referred to as a semiconductor substrate product. A chip which is processed and cut as necessary and taken out is referred to as a semiconductor element or a semiconductor device. That is, in a broad sense, a semiconductor element belongs to a semiconductor substrate product. The orientation of the substrate is referred to as "upper" or "top" on the side opposite to the tantalum wafer, and "on the wafer side" (SiOC side). Or "bottom."

[etching solution]

Next, a preferred embodiment of the etching liquid of the present invention will be described. The etching liquid of the present embodiment contains an oxidizing agent and an organic cerium compound. Hereinafter, each component including an arbitrary component will be described.

(oxidant)

Examples of the oxidizing agent include nitric acid, hydrogen peroxide, ammonium persulfate, perboric acid, peracetic acid, periodic acid, perchloric acid, or a combination thereof, and among them, nitric acid and hydrogen peroxide are particularly preferable.

The total amount of the oxidizing agent in the etching solution of the present embodiment is preferably 1% by mass or more, more preferably 3% by mass or more, and particularly preferably 5% by mass or more. The upper limit is preferably 40% by mass or less, more preferably 35% by mass or less, still more preferably 30% by mass or less. By setting it as the said upper limit or less, it is preferable to suppress the excessive etching of a 2nd layer further. From the viewpoint of etching the first layer at a sufficient speed, it is preferably at least the above lower limit value. Further, by adjusting the amount to a preferable range, it is possible to further effectively achieve uniformization of the etching surface of the first layer, which is preferable.

These oxidizing agents may be used alone or in combination of two or more.

(organic bismuth compound)

The organic ruthenium compound is defined as a compound having a carbon atom in the molecule and containing a quaternary ruthenium structure. Specifically, it is preferably a quaternary ammonium salt or a salt thereof, more preferably a quaternary ammonium hydroxide. As the quaternary ammonium hydroxide, more preferred is tetraalkylammonium hydroxide. Specific examples thereof include tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), benzyltrimethylammonium hydroxide, ethyltrimethylammonium hydroxide, and 2-hydroxyl hydroxide. Ethyltrimethylammonium, benzyltriethylammonium hydroxide, cetyltrimethylammonium hydroxide, tetrabutylammonium hydroxide (TBAH), tetrahexylammonium hydroxide, tetrapropylammonium hydroxide, etc. .

Among them, tetraalkylammonium hydroxide having three or more methyl groups and/or ethyl groups is more preferred. Most preferred is tetramethylammonium hydroxide or ethyltrimethylammonium hydroxide.

The total mass of the organic cerium compound to the etching liquid of the present embodiment is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and particularly preferably 0.1% by mass or more. The upper limit is preferably 6% by mass or less, more preferably 4% by mass or less, and particularly preferably 2.5% by mass or less. By setting it as the said upper limit or less, it is preferable to make W or more more than necessary, and it is preferable. It is preferable to use the above-mentioned lower limit value or more to make the etching rate of TiN practical.

In the case of the oxidizing agent, it is preferably used in an amount of 0.01 part by mass or more, more preferably 0.02 part by mass or more, based on 100 parts by mass of the oxidizing agent. The upper limit is preferably 30 parts by mass or less, more preferably 20 parts by mass or less, and still more preferably 10 parts by mass or less. By using the amount of both in an appropriate relationship, good etching properties can be achieved, and high in-plane uniformity is achieved at the same time.

These organic hydrazine compounds may be used alone or in combination of two or more.

(surface homogenizer)

The etching liquid of the present invention preferably contains a surface homogenizing agent which improves the uniformity by etching the second layer. By adding this, the surface uniformity of the first layer after etching can be further improved, and the surface uniformity of the second layer can be further achieved. By improving the surface uniformity of the metal layer (the second layer) thus provided, the surface uniformity of the first layer (TiN layer) can be achieved, and the manufacturing steps can be improved as compared with the case where the uniformity is uniform. And contribute to the improvement of manufacturing quality.

. Nitrogen-containing organic compounds/aromatic compounds

The surface homogenizing agent is preferably a nitrogen-containing organic compound, preferably a 5- or 6-membered nitrogen-containing heterocyclic compound (a hetero atom is nitrogen, oxygen, sulfur, or the like). Alternatively, examples of the preferred compound include aromatic compounds. The heterocyclic compound and the aromatic compound may be monocyclic or polycyclic. As the heterocyclic compound, a 5-membered nitrogen-containing heteroaromatic compound is more preferable. The nitrogen content at this time is preferably from 1 to 4. As the aromatic compound, a compound having a benzene ring is preferred.

The surface homogenizing agent is preferably a compound represented by any one of the following formulas (I) to (IX).

. R ¹ ~R ³⁰

In the formula, R ¹ to R ³⁰ each independently represent a hydrogen atom or a substituent. The substituent may, for example, be an alkyl group (preferably having 1 to 20 carbon atoms, more preferably 1 to 6 carbon atoms) or an alkenyl group (preferably having 2 to 20 carbon atoms, more preferably 2 to 6 carbon atoms). Base (preferably having a carbon number of 6 to 24, more preferably 1 to 12), a heterocyclic group (preferably having a carbon number of 1 to 20, more preferably 1 to 6), or an alkoxy group (preferably having a carbon number of 1) ~20, more preferably 1~6), sulfhydryl (preferably carbon number 2-20, more preferably 2-6), amine group (preferably carbon number 0-6), carboxyl group, phosphate group, hydroxyl group , thiol group (-SH), boric acid group (-B(OH) ₂ ), and the like. Further, as the above aryl group, a phenyl group or a naphthyl group is preferred. The above heterocyclic group may, for example, be a nitrogen-containing heteroaromatic group, and among them, a 5-membered nitrogen-containing heteroaromatic group is preferred, and a pyrrolyl group, an imidazolyl group, a pyrazolyl group, a triazolyl group or a tetrazolyl group is more preferred. These substituents may further have a substituent within the range in which the effects of the present invention are exerted. Further, among the above substituents, an amine group, a carboxyl group, a phosphoric acid group or a boronic acid group may form a salt thereof. Examples of the counter ion forming the salt include quaternary ammonium such as ammonium ion (NH ₄ ⁺ ) or tetramethylammonium ion ((CH ₃ ) ₄ N ⁺ ).

The above substituent may be substituted via any linking group. Examples of the linking group include an alkylene group (preferably having 1 to 20 carbon atoms, more preferably 1 to 6 carbon atoms) and an alkenyl group (preferably having 2 to 20 carbon atoms, more preferably 2 to 6 carbon atoms). An ether group (-O-), an imido group (preferably having a carbon number of 0 to 4), a thioether group (-S-), a carbonyl group or a combination thereof. Hereinafter, the linking group will be referred to as a linking group L. Further, the linking group may further have a substituent within the range in which the effects of the present invention are exerted.

R ¹ to R ³⁰ are preferably an alkyl group having 1 to 6 carbon atoms, a carboxyl group, an amine group (preferably having a carbon number of 0 to 4), a hydroxyl group or a boronic acid group. These substituents may also be substituted via a linking group L as described above.

Further, in R ¹ to R ³⁰ , the adjacent R ¹ to R ³⁰ may be linked or condensed to each other to form a ring structure. Examples of the ring structure to be formed include a pyrrole ring structure, an imidazole ring structure, a pyrazole ring structure, and a triazole ring structure. Further, the ring structure portions may further have a substituent within the range in which the effects of the present invention are exerted. Further, when the ring structure formed here is a benzene ring, it is classified into the formula (VII).

. A

A represents a hetero atom and represents a nitrogen atom, an oxygen atom, a sulfur atom or a phosphorus atom. However, when A is a divalent (oxygen atom or a sulfur atom), R ¹ , R ³ , R ⁶ , R ¹¹ , R ²⁴ and R ^{28 are not present} .

The compound represented by the above formula (VII) is preferably a compound represented by any one of the following formula (VII-1) to the following formula (VII-4).

R ^a represents an acidic group, preferably a carboxyl group, a phosphoric acid group, or a boronic acid group. The above acidic group may be substituted via the above-mentioned linking group L.

R ^b is an alkyl group having 1 to 6 carbon atoms, an amine group (preferably having a carbon number of 0 to 4), a hydroxyl group, an alkoxy group (preferably having a carbon number of 1 to 6) or a mercapto group (preferably having a carbon number of 1). ~6). The above substituent R ^b may be substituted via the above-mentioned linking group L. When there are a plurality of R ^b , these may be linked or condensed to form a ring structure.

N1 is an integer from 1 to 5. N2 is an integer from 0 to 5. N3 is an integer from 0 to 4. When n1 to n3 are each 2 or more, the plurality of substituents defined herein may be the same or different.

In the formula, A has the same meaning as A defined above. R ^c , R ^d and R ^e are the same meanings as R ¹ to R ³⁰ . Wherein, when A is divalent, R ^c and R ^e are absent.

Hereinafter, examples of the compound represented by any one of the above formulas (I) to (IX) will be given, but the invention is not limited thereto.

Further, the following exemplified compounds include an example showing a tautomer, and other tautomers are also included in the preferred examples of the present invention. It is also the same as the above formula (I) to formula (IX) and formula (VII-1) to formula (VII-4).

[Chemical 4]

The content of the nitrogen-containing organic compound or the aromatic compound which forms the surface homogenizing agent is not particularly limited, and is preferably 0.01% by mass or more, more preferably 0.05% by mass or more, and particularly preferably 0.1% by mass or more in the etching liquid. The upper limit is not particularly limited, but is preferably 5% by mass or less, more preferably 3% by mass or less, and particularly preferably 1% by mass or less. By setting it as the said lower limit or more, it can obtain the effect of the uniformization of a metal layer, and it is preferable. On the other hand, from the viewpoint of not inhibiting good etching performance, it is preferably set to be equal to or less than the above upper limit.

. Oxygenated organic compound

The etching liquid of the present invention preferably further contains an oxygen-containing organic compound as the above surface homogenizing agent. The oxygen-containing organic compound is preferably a compound which becomes a water-soluble organic solvent. The water-soluble organic solvent is preferably an organic solvent which can be mixed with water in an arbitrary ratio.

Examples of the oxygen-containing organic compound include methanol, ethanol, 1-propanol, 2-propanol, 2-butanol, ethylene glycol, propylene glycol, glycerin, 1,6-hexanediol, and cyclohexanediol. Alcohol compounds such as sorbitol, xylitol, 2-methyl-2,4-pentanediol, 1,3-butanediol, and 1,4-butanediol, including alkylene Glycol alkyl ether (ethylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol, dipropylene glycol, propylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol, polyethylene glycol An ether compound such as propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, diethylene glycol monobutyl ether or the like.

Among these, an alcohol compound having 2 to 15 carbon atoms, an ether compound having 2 to 15 carbon atoms, and an alcohol compound having 2 to 10 carbon atoms and a carbon number of 2 to 10 are preferable. An ether compound of a hydroxyl group. It is especially preferred to be an alkylene glycol alkyl ether having a carbon number of 3-8. The oxygen-containing organic compound may be used singly or in combination of two or more kinds as appropriate. Further, in the present specification, a compound having a hydroxyl group (-OH) and an ether group (-O-) in the molecule is contained in principle in an ether compound (not referred to as an alcohol compound), and is particularly distinguished from having a hydroxyl group and an ether group. In the case of a compound of both, there is a case where it is called an ether compound containing a hydroxyl group.

The above oxygen-containing organic compound is preferably a compound represented by the following formula (O-1). Things.

R ¹¹ -(-OR ¹³ -) _n -OR ¹² ...(O-1)

. R ¹¹ , R ¹²

R ¹¹ and R ¹² each independently represent a hydrogen atom or an alkyl group having 1 or more and 5 or less carbon atoms. Each of them is preferably an alkyl group having 1 or more and 5 or less carbon atoms, and more preferably an alkyl group having 1 or more and 3 or less carbon atoms.

. R ¹³

R ¹³ is a linear or branched chain alkylene chain having 1 or more and 4 or less carbon atoms. When there are a plurality of R ¹³ , each R ¹³ may be different.

. n

n is an integer of 1 or more and 6 or less.

The amount of the oxygen-containing organic compound to be added is preferably 0.1% by mass or more, and more preferably 10% by mass or more based on the total amount of the etching liquid. The upper limit is preferably 70% by mass or less, and more preferably 50% by mass or less. By setting the amount to be equal to or higher than the above lower limit, the uniformity of the above etching can be effectively improved.

These surface homogenizing agents may be used alone or in combination of two or more.

Further, in the present specification, the expression of the compound (for example, when the compound is attached to the end of the compound) is used to mean that the salt thereof and the ion thereof are contained in addition to the compound itself. In addition, it is indicated that a derivative in which a part of the substituent is introduced or the like is changed within a range in which the desired effect is exhibited.

In this specification, the label is not clearly substituted. The unsubstituted substituent (the same substituent) means that the group may have any substituent. It is also replaced with an unidentified mark. Unsubstituted compounds have the same meaning. As preferred substituents, The substituent T is described.

Examples of the substituent T include the following groups.

An alkyl group (preferably an alkyl group having 1 to 20 carbon atoms such as methyl, ethyl, isopropyl, tert-butyl, pentyl, heptyl, 1-ethylpentyl, benzyl, 2- Ethoxyethyl, 1-carboxymethyl, etc.), alkenyl (preferably an alkenyl group having 2 to 20 carbon atoms, such as a vinyl group, an allyl group, an oleyl group, etc.), an alkynyl group (preferably Alkynyl group having 2 to 20 carbon atoms, such as ethynyl, butadiynyl, phenylethynyl, etc., cycloalkyl (preferably a cycloalkyl group having 3 to 20 carbon atoms, such as a cyclopropyl group, a ring) Pentyl, cyclohexyl, 4-methylcyclohexyl, etc.), aryl (preferably an aryl group having 6 to 26 carbon atoms, such as phenyl, 1-naphthyl, 4-methoxyphenyl, 2- a chlorophenyl group, a 3-methylphenyl group or the like), a heterocyclic group (preferably a heterocyclic group having 2 to 20 carbon atoms, preferably 5 members or 6 having at least one oxygen atom, sulfur atom or nitrogen atom) a heterocyclic group of a member ring, such as 2-pyridyl, 4-pyridyl, 2-imidazolyl, 2-benzimidazolyl, 2-thiazolyl, oxazolyl, etc., alkoxy ( It is preferably an alkoxy group having 1 to 20 carbon atoms, such as a methoxy group, an ethoxy group, an isopropoxy group or a benzyloxy group, or an aryloxy group (preferably a carbon source). 6 to 26 aryloxy groups, such as phenoxy, 1-naphthyloxy, 3-methylphenoxy, 4-methoxyphenoxy, etc.), alkoxycarbonyl (preferably having a carbon number) 2 to 20 alkoxycarbonyl group, such as ethoxycarbonyl group, 2-ethylhexyloxycarbonyl group, etc.), amine group (preferably an amino group having 0 to 20 carbon atoms, including an alkylamino group, an aryl group) The amine group is, for example, an amine group, an N,N-dimethylamino group, an N,N-diethylamino group, an N-ethylamino group, an anilino group or the like, an amine sulfonyl group (preferably a carbon atom). a sulfonylamino group having 0 to 20, for example, N,N-dimethylamine sulfonyl group, N-phenylamine sulfonyl group, etc., and a fluorenyl group (preferably a fluorenyl group having 1 to 20 carbon atoms) For example, an ethyl hydrazino group, a propyl fluorenyl group, a butyl fluorenyl group, a benzamidine group, etc.), a decyloxy group (preferably a decyloxy group having 1 to 20 carbon atoms, such as an ethoxy group, a benzyl methoxy group, etc.), Aminomethyl thiol (preferably 1 to 1 carbon atom) An amine carbenyl group of 20, such as N,N-dimethylaminecarbamyl, N-phenylaminecarbamyl, etc.), a guanamine group (preferably a decylamino group having 1 to 20 carbon atoms, for example Anthranilyl, benzamidine, etc.), a sulfonamide group (preferably an amidoxime group having 0 to 20 carbon atoms, such as mesylamine, benzenesulfonamide, N-methylmethanesulfonate) Anthracene, N-ethylbenzenesulfonamide, etc., an alkylthio group (preferably an alkylthio group having 1 to 20 carbon atoms, such as methylthio, ethylthio, isopropylthio, benzylthio, etc.) An arylthio group (preferably an arylthio group having 6 to 26 carbon atoms, such as a phenylthio group, a 1-naphthylthio group, a 3-methylphenylthio group, a 4-methoxyphenylthio group, etc.), An alkyl or arylsulfonyl group (preferably an alkyl or arylsulfonyl group having 1 to 20 carbon atoms, such as a methylsulfonyl group, an ethylsulfonyl group, a benzenesulfonyl group, etc.), a hydroxyl group, and a cyano group. a halogen atom (for example, a fluorine atom, a chlorine atom, a bromine atom, an iodine atom or the like), more preferably an alkyl group, an alkenyl group, an aryl group, a heterocyclic group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group or an amine group. , amidino, hydroxy or a halogen atom, preferably an alkyl group, an alkenyl group, a heterocyclic group, an alkoxy group, an alkoxycarbonyl group, an amine group, a decylamine Or hydroxy.

Further, each of the groups exemplified in the substituents T may be further substituted with the above substituent T.

Compound or substituent. The linking group and the like include an alkyl group. Alkyl, alkenyl. When an alkenyl group or the like is extended, the ring may be a chain or a chain, and may be a straight chain or a branched chain, and may be substituted or unsubstituted as described above. Further, when an aryl group, a heterocyclic group or the like is contained, these may be a monocyclic ring or a condensed ring, and may be substituted or unsubstituted.

In the present specification, the list of the substituents of the compound or the linking group is started, and the list of technical matters such as temperature and thickness can be independently described or combined with each other.

(aqueous medium)

The etching liquid of the present invention preferably uses water (aqueous medium) as its medium, preferably It is an aqueous solution in which each component is uniformly dissolved. The content of water is preferably 50% by mass to 99.5% by mass, and preferably 55% by mass to 95% by mass based on the total mass of the etching liquid. In the case where the composition containing water as a main component (50% by mass or more) is particularly referred to as a water-based composition, it is cheaper and more environmentally friendly than a high-rate composition of an organic solvent. good. From this point of view, the etching liquid of the present invention is preferably a water-based composition. The water (aqueous medium) may be an aqueous medium containing a dissolved component or may contain an unavoidable minute mixed component insofar as the effect of the present invention is not impaired. Among them, distilled water or ion-exchanged water, or water subjected to purification treatment such as ultrapure water is preferred, and ultrapure water used in semiconductor manufacturing is particularly preferably used.

(pH)

In the present invention, it is preferred to adjust the pH of the etching solution to 6.5 or more, and more preferably to 7 or more. The upper limit side preferably has a pH of 11 or less, more preferably 10.5 or less, and still more preferably 9 or less. When the value is equal to or higher than the lower limit value, not only the etching rate of TiN can be made practical, but also the in-plane uniformity can be further optimized. On the other hand, by setting it as the said upper limit or less, it is preferable for the corrosion resistance of the other substrate, such as SiO and SiOC. Further, in the present invention, the pH value is set according to the apparatus and conditions measured in the examples unless otherwise specified.

(other ingredients)

. pH adjuster

In the present embodiment, the pH of the etching solution is preferably set to the above range, and the pH adjusting agent is used in the adjustment. As the pH adjuster, in order to increase the pH, an alkali metal hydroxide such as potassium hydroxide or an alkaline earth metal salt such as calcium hydroxide or an amine compound such as 2-aminoethanol or guanidine is preferably used. In order to lower the pH, Listed: mineral acid such as hydrochloric acid, nitric acid, sulfuric acid, phosphoric acid, or formic acid, acetic acid, propionic acid, butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-B Butyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid , malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, tartaric acid, citric acid, lactic acid and other organic acids.

The amount of the pH adjusting agent to be used is not particularly limited, and may be used in an amount necessary for adjusting the pH to the above range.

(set)

The etching liquid in the present invention can be a set in which the raw material is divided into a plurality of sets. For example, a liquid composition containing the organic hydrazine compound in the aqueous medium is prepared as the first liquid, and a liquid composition containing the oxidizing agent in the aqueous medium is prepared as the second liquid. As an example of use, it is preferable to mix the two liquids to adjust the etching liquid, and then apply it to the embodiment in the etching process as appropriate. Thereby, the deterioration of the liquid property caused by the decomposition of the oxidizing agent (for example, hydrogen peroxide) is not caused, and the desired etching action can be effectively exhibited. Here, the "timely" after mixing refers to the time from the mixing to the loss of the desired effect, and specifically, it is preferably within 60 minutes, more preferably within 30 minutes, and even more preferably within 10 minutes. The lower limit is not particularly limited, but is actually 1 second or longer.

The concentration of the organic ruthenium compound in the first liquid is not particularly limited, but is preferably 2% by mass or more, and more preferably 4% by mass or more. The upper limit is preferably 20% by mass or less, and more preferably 10% by mass or less. By setting the concentration to the above range, it is preferable to be in a state suitable for mixing with the second liquid, and it is preferable because it is a preferable concentration region in the etching liquid.

The concentration of the oxidizing agent in the second liquid is not particularly limited, but is preferably 5% by mass or more, and more preferably 10% by mass or more. The upper limit is preferably 50% by mass or less, preferably 40% by mass or less. By setting the concentration to the above range, it is preferable to be in a state suitable for mixing with the first liquid, and it is preferably a preferable concentration region in the etching liquid.

In the case of using the above surface homogenizing agent, it is preferred to add it to the first liquid side in advance. Alternatively, a liquid composition containing a water-soluble organic solvent in an aqueous medium may be prepared and mixed as the third liquid with the first liquid and the second liquid.

The method of mixing the first liquid and the second liquid is not particularly limited, and it is preferred that the first liquid and the second liquid are caused to flow through the respective channels, and the two are combined and mixed at the junction. Thereafter, it is preferable that the etching liquid obtained by flowing through the flow path and being joined together is ejected or ejected from the ejection port to be in contact with the semiconductor substrate. As described in the above embodiment, it is preferable that the merging and mixing of the junctions to be in contact with the semiconductor substrate is performed in a timely manner. As described using FIG. 3, the prepared etching liquid is ejected from the ejection port 13 and applied to the upper surface of the semiconductor substrate S in the reaction container 11. In the embodiment shown in the same figure, the two liquids A and B are supplied, merged at the joining point 14, and then moved to the discharge port 13 via the flow path fc. The flow path fd represents a return path for recycling the medical liquid. The semiconductor substrate S is preferably located on the turntable 12, and is rotated together with the turntable by the rotary drive portion M. Further, the embodiment using the substrate rotary type device can be similarly applied to the treatment using an unset etchant.

Since the etching liquid of the present invention has corrosion resistance of SiO or SiOC, it is preferable to use a wrong compound such as ethylenediaminetetraacetic acid (EDTA).

(container)

The etching liquid of the present invention can be stored in a container, stored, transported, and used as long as it does not cause problems such as relative corrosion (whether or not it is a set). Further, in terms of semiconductor use, an etchant having a high cleanness of the container and a small amount of elution of impurities is preferable. Examples of the usable container include the "Clean Bottle" series manufactured by Aicello Chemical Co., Ltd., and the "Pure Bottle" manufactured by Kodama Plastics Co., Ltd., but are not limited thereto. These.

[etching conditions]

In the present embodiment, the conditions for etching are not particularly limited, and may be a single-piece (spray type) etching or an immersion type (batch type) etching. The spray type etching is to transfer or rotate the semiconductor substrate in a predetermined direction, and eject an etching liquid into the space to bring the semiconductor substrate into contact with the etching liquid. On the other hand, in the batch type etching, the semiconductor substrate is immersed in a liquid bath containing an etching liquid, and the semiconductor substrate is brought into contact with the etching liquid in the liquid bath. These etching methods may be appropriately used depending on the structure, material, and the like of the elements.

In the temperature measuring method shown in the following examples, the ambient temperature for etching is preferably 40 ° C or higher, more preferably 50 ° C or higher, and particularly preferably 55 ° C or higher. The upper limit is preferably 80 ° C or lower, more preferably 70 ° C or lower. By setting it as the said lower limit or more, it is good in the sufficient etching speed of a TiN layer, and it is preferable. By setting it as the said upper limit or less, the time-lapse stability of the etching process speed can be maintained, and it is preferable. The supply rate of the etching liquid is not particularly limited, but is preferably 0.05 L/min to 1 L/min, and more preferably 0.1 L/min to 0.5 L/min. When it is set to a higher supply speed, it is preferably set to 0.1 L/min to 3 L (liter)/min, and more preferably set to 0.2 L/min to 2 L/min. By setting it as the said lower limit or more, it can further ensure favorable etching. The in-plane uniformity is preferred. By setting it as the said upper limit or less, it is preferable, since it can ensure stable selectivity at the time of continuous process. When the semiconductor substrate is rotated, it depends on the size and the like, but it is preferably rotated at 50 rpm to 400 rpm from the same viewpoint as described above. When the rotation speed is set to be higher, it is preferably set to 100 rpm to 2000 rpm, and more preferably set to 300 rpm to 1000 rpm.

In the case of the batch type, it is also preferred to set the liquid bath to the above temperature range for the same reason as described above. The immersion time of the semiconductor substrate is not particularly limited, but is preferably 0.5 minutes to 30 minutes, more preferably 1 minute to 10 minutes. It is preferable to set the above-mentioned lower limit value or more to ensure the in-plane uniformity of etching. When the value is equal to or lower than the above upper limit value, the performance in the case where the etching liquid is used again can be maintained, which is preferable.

In the monolithic etching of the preferred embodiment of the present invention, it is preferable that the semiconductor substrate is transferred or rotated in a predetermined direction, and an etching liquid is ejected into the space to bring the semiconductor substrate into contact with the etching liquid. The supply speed of the etching liquid or the rotation speed of the substrate is the same as that described above.

In the preferred embodiment of the monolithic device of the present invention, as shown in Fig. 4, an etchant is provided while moving the discharge port (nozzle). Specifically, in the present embodiment, when an etching liquid is applied to the semiconductor substrate S having a layer containing TiN, the substrate is rotated in the r direction. On the other hand, the ejection port is moved along a movement trajectory t extending from the central portion of the semiconductor substrate to the end portion. As described above, in the present embodiment, the rotation direction of the substrate and the movement direction of the discharge port are set to be different directions, thereby causing the two to move relative to each other. As a result, the etching liquid can be uniformly applied to the entire surface of the semiconductor substrate, and the uniformity of etching can be preferably ensured.

The moving speed of the discharge port (nozzle) is not particularly limited, but is preferably 0.1 cm/s. More preferably, it is 1 cm / s or more. On the other hand, the upper limit thereof is preferably 30 cm/s or less, more preferably 15 cm/s or less. The moving trajectory can be a straight line or a curved line (for example, an arc shape). In either case, the speed of movement can be calculated from the distance of the actual trajectory and the time it takes to move.

[residue]

In the manufacturing process of the semiconductor element, there may be a step of etching a metal layer or the like on the semiconductor substrate by plasma etching using a resist pattern or the like as a mask. Specifically, the metal layer, the semiconductor layer, the insulating layer, and the like are etched to pattern the metal layer or the semiconductor layer, or an opening such as a via hole or a wiring trench is formed on the insulating layer. In the above plasma etching, a photoresist used as a mask or a residue derived from an etched metal layer, a semiconductor layer, or an insulating layer may be generated on the semiconductor substrate. In the present invention, the residue thus generated by plasma etching is referred to as "plasma etching residue". Further, the "plasma etching residue" also includes an etching residue of the third layer (SiON or SiOC).

In addition, the photoresist pattern used as a mask is removed after etching. As described above, the removal of the photoresist pattern may use a wet method using a stripper solution, or a dry method such as ashing using plasma, ozone, or the like. In the above ashing, a residue which deteriorates the plasma etching residue by plasma etching or a residue derived from the removed photoresist is generated on the semiconductor substrate. In the present invention, the residue thus produced by ashing is referred to as "ashing residue". In addition, the general term for the residue to be cleaned and removed on the semiconductor substrate such as the plasma etching residue and the ashing residue may be simply referred to as "residue".

The plasma etching residue or the ashing residue as the post-etch residue (Post Etch Residue) is preferably cleaned and removed using a cleaning composition. Present implementer The etchant can also be applied as a cleaning solution for removing plasma etching residues and/or ashing residues. Preferably, after the plasma ashing is continued after the plasma etching, the plasma etching residue and the ash residue are removed.

[processed object]

The material to be etched by applying the etching liquid of the present embodiment may be any, and a substrate having a first layer containing TiN is used. Here, the TiN-containing layer (TiN layer) means that oxygen may be contained, and when it is distinguished from a layer containing no oxygen in particular, it may be referred to as a TiN layer or the like. In the present invention, the oxygen content of the TiN layer is 10 mol% or less, preferably 8.5 mol% or less, and more preferably 6.5 mol% or less. The lower limit side is 0.1 mol% or more, preferably 2.0 mol% or more, and more preferably 4.0 mol% or more.

In the present invention, it is important to set the surface oxygen concentration of the TiN layer in the substrate to the above range. By setting the lower limit value or more and the upper limit value or less, the in-plane uniformity of TiN after etching can be achieved. The homogenization effect of such a surface becomes apparent by using a monolithic etching apparatus. In addition, it becomes apparent even when used as a kit in which a plurality of liquids are combined. Further, the surface oxygen concentration of the TiN layer (first layer) can be measured by the method described in the following examples.

The adjustment of the oxygen concentration in the TiN layer by such a substrate can be performed, for example, by adjusting the oxygen concentration in the process chamber of the chemical vapor deposition (CVD) process in forming the TiN layer. Further, the first layer contains TiN as its main component, but may contain other components insofar as the effects of the present invention are exerted. This is also the case in other layers such as the second layer (metal layer).

The first layer is preferably etched at a high etch rate. The thickness of the first layer is not particularly limited, and is actually about 0.005 μm to 0.3 μm in consideration of the configuration of a usual element. The etching rate of the first layer [R1] is not particularly limited, considering the raw The production efficiency is preferably 50 Å/min or more, more preferably 100 Å/min or more, and particularly preferably 200 Å/min or more. The upper limit is preferably 500 Å/min or less, more preferably 400 Å/min or less, and particularly preferably 350 Å/min or less.

Further, the invention disclosed in Japanese Patent Laid-Open Publication No. 2010-10273 or the like utilizes a TiN film which is related to the use of the insulating film. The TiN film as an insulating film is for increasing the insulating property, and the surface oxygen concentration is increased, and the concentration thereof is usually more than 10 mol%. The use of the TiN film of the preferred embodiment of the present invention is for a metal hard mask (MHM), and therefore insulation is not necessarily required. Therefore, the surface oxygen concentration can be adjusted depending on the etching property and the like.

The method of the present invention is preferably applied to a semiconductor substrate having a second layer containing a metal such as Cu, W, Co, Ni, Ag, Ta, Hf, Pt, or Au. Among them, Cu and W are preferably used as the material of the second layer.

Here, the technical significance of the metal layer will be described based on the use of tungsten (W) as an example of the material. In recent years, in response to the demand for higher speed of semiconductor devices (Semiconductor Device), miniaturization of wiring patterns, and high integration, reduction in capacitance between wirings, improvement in wiring conductivity, and improvement in electromigration resistance have been achieved. . As a technique for coping with these requirements, a multilayer wiring technique using a low dielectric constant layer (Low-k layer) as an interlayer insulating layer using copper having excellent conductivity and excellent electromigration resistance as a wiring material has been attracting attention. The copper wiring generally functions as a copper diffusion preventing film for preventing copper diffusion on the copper wiring, and is disposed on a copper seed layer by a dual damascene process (for example, 钽 ( Ta) and tantalum nitride (TaN) double layer).

On the other hand, the contacts of semiconductor components usually replace copper The two-pass damascene process used in the formation of the wires and vias is provided via a tungsten plug using a single damascene process. Such a multilayer wiring technique employs a damascene method in which a low dielectric constant layer forms a recess such as a wiring trench or a through hole to embed copper therein. In this case, in order to form the concave portion with good etching precision in the low dielectric constant layer, it is necessary to use a mask including a material having a sufficiently high selection ratio of the low dielectric constant layer as the etching of the low dielectric constant layer. The mask.

Since the organic material is usually used as the low dielectric constant layer, it is considered that when the low dielectric constant layer is etched by using a photoresist layer containing the same organic material as a mask, The ratio will become insufficient. In order to solve such a problem, it is proposed to use a hard mask layer containing an inorganic material such as a TiN film as a mask for etching. Moreover, the hard mask layer must be removed from the low dielectric constant layer by a post-etch process. In particular, the etching of the wet process is preferably a metal layer such as a tungsten plug or other wiring as needed. The low dielectric constant layer material is corroded to dissolve or uniformly maintain its surface.

The first layer (TiN) layer constituting the hard mask is removed in the embodiment described above, so in this case, the metal layer (the second layer) is usually located at the bottom of the via hole or trench (refer to FIG. 1). ,2).

The etching rate [R2] of the second layer (metal layer) is not particularly limited, and is preferably not excessively removed, and is preferably 0.001 Å/min to 100 Å/min, more preferably 0.01 Å/min to 50 Å/min.

The exposed width of the metal layer (d in the drawing) is not particularly limited, and from the viewpoint of further enhancing the advantages of the present invention, it is preferably 5 nm or more, and more preferably 10 nm or more. Similarly, the upper limit is actually 1000 in terms of the obviousness of the effect. Below nm, it is preferably 100 nm or less, more preferably 25 nm or less.

Further, the method of the present invention is also preferably applied to a semiconductor substrate having a third layer containing a metal compound such as SiO, SiN, SiOC or SiON. Further, in the present specification, in the case where the composition of the metal compound is expressed by a combination of the elements, it means that the compound of any composition is widely included. For example, SiO means a thermally oxidized film containing ruthenium, SiO ₂ , and contains SiOx. The third layer is preferably suppressed to a low etch rate. The thickness of the third layer is not particularly limited, and is actually about 0.005 μm to 0.5 μm in consideration of the configuration of a usual element. The etching rate [R3] of the third layer is also preferably as low, and the preferred range is the same as the above [R2].

[Manufacture of semiconductor substrate products]

In the present embodiment, the step of forming the semiconductor substrate of the first layer and the second layer on the germanium wafer and the step of applying an etching solution to the semiconductor substrate to selectively dissolve the first layer are preferred. And manufacturing a semiconductor substrate article having a desired structure. At this time, etching is performed using the above specific etching liquid.

In addition, in the present specification, the respective steps of the etching and the method of manufacturing the semiconductor substrate are applied in an order in which the steps of the steps are appropriately changed within the range in which the effects of the present invention are exerted. In the present specification, when it is referred to as "preparation", in addition to the synthesis or blending of a specific material, it is also indicated that the prescription is supplied by purchase or the like. In addition, the case where an etching liquid is used for etching each material of a semiconductor substrate is called "application", and an embodiment is not specifically limited. For example, a case where the etching liquid is brought into contact with the substrate is widely included. Specifically, it may be etched by batch etching, or may be etched by sputtering by a single-piece etching.

[Examples]

Hereinafter, the present invention will be described in more detail with reference to examples, but the present invention The description is not limited to the following examples. Further, the specification of the amount or ratio shown in the examples is a mass basis unless otherwise specified.

<Example 1 and Comparative Example 1>

An etchant was prepared by using the composition (% by mass) shown in Table 1 below, containing the components shown in Table 1. In addition, the remaining part is water (ultra-pure water).

(Method of manufacturing TiN substrate)

A TiN film having a surface oxygen concentration of 6.1 mol% was formed by CVD on a commercially available tantalum substrate. Further, a metal layer (W layer) in the watch was also formed in the vicinity of the TiN layer by CVD as needed to prepare a test substrate. When CVD is performed, a substrate having a different surface oxygen concentration and a substrate having a different diameter of the substrate are prepared by controlling a small amount of oxygen concentration in the gas phase. A commercially available TiN substrate (manufactured by Silicon Valley Microelectronics Co., Ltd.) was used as the substrate having an oxygen concentration of 12.2%.

(surface oxygen concentration)

The surface oxygen concentration of the TiN layer is a concentration profile of Ti, O, and N in the depth direction measured by etching ESCA (Quantera manufactured by ULVAC-PHI) in the depth direction from 0 nm to 30 nm, and the content ratios at 5 nm to 10 nm are calculated, respectively. The average oxygen content is set to the surface oxygen concentration.

(etching test)

The test substrate was etched under the following conditions using a monolithic apparatus (SPS-Europe B.V., POLOS (trade name)), and an evaluation test was performed.

. Processing temperature: 57 ° C

. Spraying amount: 1L/min.

. Wafer revolution 500rpm

(Method for measuring treatment temperature)

A radiation thermometer IT-550F (trade name) manufactured by Horiba, Ltd. was fixed to a height of 30 cm on the wafer in the above-described single chip device. The thermometer was placed on the surface of the wafer 2 cm outside the center of the wafer, and the temperature was measured while flowing the liquid. The temperature is digitally outputted using a radiation thermometer, and is continuously recorded by a computer. The value obtained by averaging the temperature in which the temperature was stable for 10 seconds was set as the temperature on the wafer.

(in-plane uniformity evaluation)

The etching depth of the center of the circular substrate was changed by time and conditions were set, and it was confirmed that the etching depth became 300 Å. Then, when the entire substrate was etched again during this time, the etching depth from the periphery of the substrate at a position of 30 mm in the center direction was evaluated as the depth closer to 300 Å, and the in-plane uniformity was higher. The specific distinction is as follows. The difference between the above two points (center, 30 mm position) is shown below, and the average value of five points is evaluated.

AAA ±5Å or less

AA exceeds ±5Å and is less than 12Å

A exceeds ±12Å and is less than 15Å

B exceeds ±15Å and is less than 20Å

C exceeds ±20Å and is less than 30Å

D exceeds ±30Å and is less than 50Å

E exceeds ±50Å

(1Å is equivalent to 0.1nm)

(Measurement of pH value)

The pH value in the table is a value measured by using F-51 (trade name) manufactured by HORIBA Co., Ltd. at room temperature (25 ° C).

(etching speed [ER])

The etching rate (ER) of the TiN layer was evaluated by the following distinction. The measurement was carried out by using a film thickness measurement method of VASE (trade name) manufactured by J.A. Woollam Co., Ltd. using an ellipsometry method and a spectroscopic ellipsometer, and the evaluation was performed based on the average value of five points.

A 300Å/min or more

B 200Å/min or more and less than 300Å/min

C 100Å/min or more and less than 200Å/min

D 50Å/min or more and less than 100Å/min, it is difficult to use in practical applications

E is less than 50Å/min and cannot be applied practically.

(note to the table)

The test starting with C is a comparative example

The substrates used were all 6-inch wafers in Table 1.

TMAH: tetramethylammonium hydroxide

TBAH: tetrabutylammonium hydroxide

EDTA: ethylenediaminetetraacetic acid

Further, the pH of the etching solution was 7.2 in Test 101, 8.3 in 102, and 7.1 in 103.

From the above results, it is understood that according to the present invention, TiN can be preferably removed, and good in-plane uniformity after etching is maintained.

Further, in the experiment of Test No. 105, the experiment was carried out by changing the diameter of the substrate to 8 inches and 12 inches, and as a result, it was found that the in-plane uniformity of W was further optimized as the diameter of the substrate was larger.

(Example 2, Comparative Example 2)

An etching test was performed in the same manner as in No. 109 of Example 1, except that the surface oxygen concentration of the substrate was changed as shown in the following table. The results are shown in the table below.

From the above results, it is known that the surface oxygen concentration of the substrate (the first layer) is obtained. The present invention, which is set to an appropriate range, can achieve good etching uniformity of the first layer (TiN layer).

(Example 3)

An etching test was performed in the same manner as in No. 109 of Example 1, except that the etching conditions were changed as shown in Table 3 below. The results are shown in the table below.

(note to the table)

. SWT: Nozzle swing type monolithic device

POLOS (product name) manufactured by SPS-Europe B.V.

. BT: Batch device

Manual Wet Bench (product name) manufactured by 濑戸Technology

. Swing speed...the speed at which the discharge port of the liquid medicine is given

. Liquid supply method

1: Preparation of the liquid in the form of a liquid and application (applicable after the liquid adjustment)

2: Prepare a liquid mixture of two liquids and mix them (using the device of Figure 3)

In addition, in the two-liquid kit, 35 mass% hydrogen peroxide water is used as the second liquid, and the first liquid is added to the aqueous solution using the other components, and the composition is adjusted so as to be mixed with the two liquids to form a specific chemical liquid composition. Into the liquid.

. Mixing elapsed time: from the time point of mixing the liquid solution of the two liquids to the elapsed time given to the substrate

From the above results, it is understood that a preferred embodiment in which the in-plane uniformity of the metal layer is optimized by a manufacturing method using a one-piece manufacturing method and a two-liquid mixture is employed.

The present invention will be described in conjunction with the embodiments thereof, but the present invention is not limited to the details of the invention as set forth in the appended claims. The scope is broadly explained.

The present application claims priority on the basis of Japanese Patent Application No. 2012-251443, filed on Jan.

1‧‧‧TiN layer (1st floor)

2‧‧‧SiON layer (3rd layer (1))

3‧‧‧SiOC layer (3rd layer (2))

4‧‧‧Cu/W layer (layer 2)

5‧‧‧through hole

10‧‧‧Substrate

‧‧‧Width

Claims (18)

An etching method for treating a substrate including a first layer containing titanium nitride (TiN) and a second layer containing a transition metal, wherein the surface oxygen content in the first layer is selected to be 0.1 mol% ~10 mol% of the substrate, and the first layer was removed by applying an etching solution containing an organic germanium compound and an oxidizing agent to the substrate. The etching method of claim 1, wherein the transition metal is selected from the group consisting of cobalt, nickel, copper, silver, rhodium, iridium, tungsten, platinum, and gold. The etching method according to Item 1, wherein the organic hydrazine compound is a quaternary phosphonium or a salt thereof. The etching method according to claim 1, wherein the oxidizing agent is nitric acid or hydrogen peroxide. The etching method according to claim 1, wherein the etching rate (R1) of the first layer is 200 Å/min or more and 500 Å/min or less. The etching method according to claim 1, wherein the etching solution further contains at least one surface homogenizing agent selected from the group consisting of nitrogen-containing organic compounds, aromatic compounds, and oxygen-containing organic compounds. The etching method according to claim 6, wherein the surface homogenizing agent comprises a compound represented by any one of the following formulas (I) to (IX): (R ¹ to R ³⁰ each independently represent a hydrogen atom or a substituent; in this case, each adjacent R ¹ to R ³⁰ may be linked or condensed to form a cyclic structure; A represents a hetero atom; wherein, A is In the case of divalent, R ¹ , R ³ , R ⁶ , R ¹¹ , R ²⁴ , R ²⁸ ) substituted on A are not present. The etching method according to claim 6, wherein the surface homogenizing agent is at least one selected from the group consisting of an alcohol compound having 2 to 15 carbon atoms and an ether compound having 2 to 15 carbon atoms. The etching method according to claim 6, wherein the surface homogenizing agent is contained in a range of 0.01% by mass or more and 70% by mass or less. The etching method according to claim 1, wherein the organic cerium compound is contained in an amount of 0.01% by mass or more and 6% by mass or less. The etching method according to claim 1, wherein the oxidizing agent is contained in an amount of 1% by mass or more and 40% by mass or less. The etching method according to claim 1, wherein the etching solution has a pH of 6.5 to 11. The etching method according to claim 1, wherein the first layer has a thickness of 0.005 μm to 0.3 μm. An etching solution for treating a substrate including a first layer containing titanium nitride and a second layer containing a transition metal, and the surface oxygen content in the first layer is selected to be 0.1 mol%. The substrate is applied with 10 mol% of an organic sulfonium compound, an oxidizing agent, and at least one surface homogenizing agent selected from the group consisting of nitrogen-containing organic compounds, aromatic compounds, and oxygen-containing organic compounds. The etching solution according to claim 14 of the patent application, which contains 0.01 quality The above organic cerium compound is contained in an amount of at least 6% by mass. The etching liquid according to claim 14, which contains 1% by mass or more and 40% by mass or less of the above oxidizing agent. The etching solution according to claim 14 of the patent application has a pH of 6.5 to 11. A method of producing a semiconductor device, which is characterized in that the first layer containing titanium nitride is removed by an etching method according to any one of claims 1 to 13, and a semiconductor element is produced from the remaining substrate.