TWI604194B - Resistive environmental sensor and resistive environmental sensor array - Google Patents

Description

Resistive environmental sensor and resistive environmental sensor array

This invention relates to a sensor and, more particularly, to a resistive environmental sensor.

In recent years, with the development of industry, people's attention to their own health and environmental protection has increased year by year, so relevant sensing technologies (such as gas sensing technology, ultraviolet light sensing technology, temperature sensing technology, humidity sensing technology, etc.) will be Gradually developing. In order to reduce the area of the sensor and improve the sensing sensitivity, the current sensor often uses the finger electrode, however, taking the sensor with one hundred pairs of the finger electrode as an example, the resistance of the sensor is still too high. (About hundreds of MΩ levels), which in turn leads to poor sensing sensitivity of the sensor. Furthermore, the configuration of the finger electrode still requires a certain area, which is disadvantageous for application on a miniaturized sensor. Therefore, how to effectively reduce the resistance of the sensor, improve the sensitivity of the sensor and miniaturize the sensor is one of the issues that the current research and development personnel need to solve.

The present invention provides a resistive environmental sensor that has the advantages of low resistance, good sensing sensitivity, and ease of miniaturization.

The invention provides a resistive environment sensor comprising an electrode stack structure and a sensing layer. The electrode stack structure includes a first electrode layer, a second electrode layer, and a dielectric layer separating the first electrode layer and the second electrode layer, wherein the electrode stack structure has a side surface, and the first electrode layer and the second electrode layer are exposed On the side of the electrode stack structure. The sensing layer is disposed on a side of the electrode stack structure, and the sensing layer is in contact with the first electrode layer and the second electrode layer. An environmental change is sensed by sensing a change in resistance of the sensing layer between the first electrode layer and the second electrode layer.

The invention further provides a resistive environmental sensor array comprising a line carrier and a plurality of sensing layers. The circuit carrier includes a first conductive pattern, a second conductive pattern, and a dielectric layer separating the first conductive pattern and the second conductive pattern, the first conductive pattern includes a plurality of first electrode layers separated from each other, and the second conductive layer The pattern includes a plurality of second electrode layers separated from each other, wherein the line carrier has a plurality of grooves to expose the first electrode layer and the second electrode layer. The sensing layer is located within the recess and the sensing layer is in contact with the first electrode layer and the second electrode layer. An environmental change is sensed by sensing a change in resistance of the sensing layer between the second electrode layers of the first electrode layer.

In an embodiment of the invention, the dielectric layer has a thickness between 0.01 microns and 100 microns.

In an embodiment of the invention, the aforementioned sensing layer is in contact with the dielectric layer.

In an embodiment of the invention, the sensing layer and the dielectric layer have an air gap therebetween.

In an embodiment of the invention, the side surface of the electrode stack structure is at an angle to the thickness direction of the electrode stack structure, and the angle is between 30 degrees and 60 degrees.

In an embodiment of the invention, the sensing layer is formed on a side of the electrode stack structure by a three-dimensional printing process, and the sensing layer comprises a germanium layer, a carbon nanotube layer, a graphene layer, and a graphene layer. An oxide layer, a zinc oxide layer, a tin dioxide layer, an indium oxide (InO _x , x>0 layer), a tungsten trioxide layer, a magnesium oxide layer, a titanium dioxide layer, a ferric oxide layer, a nickel layer, a copper layer or Au cluster layer.

In an embodiment of the invention, the resistive environment sensor may further include at least one groove, and the surface of the at least one groove is a side surface of the electrode stack structure.

Based on the above, since the first electrode layer and the second electrode layer are separated by a dielectric layer, and the distance (or spacing) between the first electrode layer and the second electrode layer depends on the thickness of the dielectric layer, Therefore, the micrometer-scale electrode pitch can be easily achieved by properly controlling the thickness of the dielectric layer. The resistive environmental sensor or the resistive environmental sensor array of the present invention has the advantages of low resistance value, good sensing sensitivity, and easy miniaturization in the case where the electrode pitch can be effectively shortened.

The above described features and advantages of the invention will be apparent from the following description.

First embodiment

1 and FIG. 3 are schematic cross-sectional views of a resistive environment sensor according to a first embodiment of the present invention, and FIG. 2 is a first electrode layer, a second electrode layer, a dielectric layer, and a sensing layer of FIG. The top view is schematic.

Referring to FIG. 1 and FIG. 2 , the resistive environment sensor 100 of the present embodiment includes an electrode stack structure 110 and a sensing layer 120 . The electrode stack structure 110 includes at least one first electrode layer 112, at least one second electrode layer 114, and at least one dielectric layer 116 separating the first electrode layer 112 and the second electrode layer 114, wherein the electrode stack structure 110 has a side surface 110a And the first electrode layer 112 and the second electrode layer 114 are exposed on the side surface 110a of the electrode stack structure 110. The sensing layer 120 is disposed on the side surface 110a of the electrode stack structure 110, and the sensing layer 120 is in contact with the first electrode layer 112 and the second electrode layer 114.

As shown in FIG. 1 and FIG. 2, the electrode stack structure 110 is stacked on a substrate SUB, for example, and the electrode stack structure 110 includes a plurality of dielectric layers 116 and a plurality of first electrode layers 112 and a plurality of second stacked alternately. The electrode layer 114 is disposed between any two adjacent first electrode layers 112 and second electrode layers 114 to separate adjacent first electrode layers 112 and second electrode layers 114. In this embodiment, the number of the first electrode layer 112, the second electrode layer 114, and the dielectric layer 116 can be changed according to actual design requirements.

The foregoing electrode stack structure 110 and the substrate SUB may be fabricated by a build-up multilayer printed circuit board process or a semiconductor process, and the sensing layer 120 may be formed on the electrode stack structure 110 by a three-dimensional printing (3D-printing) process. On the side 110a. In some embodiments, an ink type or aerosol sensing material may be printed or deposited on the side 110a of the electrode stack 110 by a non-contact printing method to form the side 110a. A conformal sensing layer 120. Since the electrode spacing between the first electrode layer 112 and the second electrode layer 114 has been fairly accurately controlled by the thickness of the dielectric layer 116, the printing of the sensing layer 120 does not require extremely precise control. In other words, the sensing layer 120 has a large process window in fabrication. Accordingly, the manufacturing yield and throughput of the resistive environmental sensor 100 can be effectively improved.

In the embodiment, the sensing layer 120 may be a gas sensing layer, a light sensing layer, a humidity sensing layer or a temperature sensing layer. For example, the sensing layer 120 includes a germanium layer, a carbon nanotube layer, a graphene layer, a graphene oxide layer, a zinc oxide layer, a tin dioxide layer, and an indium oxide (InO _x , x>0 layer). , a tungsten trioxide layer, a magnesium oxide layer, a titanium dioxide layer, a ferric oxide layer, a nickel layer, a copper layer or an Au cluster layer. It is worth noting that the ruthenium layer, carbon nanotube layer, graphene layer, graphene layer oxide layer, zinc oxide layer, tin dioxide layer, indium oxide (InO _x , x>0) layer, tungsten trioxide Layer, magnesium oxide layer, titanium dioxide layer, ferric oxide layer and gold cluster layer can be used as gas sensing layer; zinc oxide layer, tin dioxide layer, indium oxide (InO _x , x>0) layer, oxidation The magnesium layer and the titanium dioxide layer can be used as the ultraviolet light sensing layer; the germanium layer, the graphene layer, the graphene layer oxide layer, the zinc oxide layer, the tin dioxide layer, and the titanium dioxide layer can be used as the humidity sensing layer; A tantalum layer, a nickel layer, and a copper layer can be used as the temperature sensing layer.

In this embodiment, the side surface 110a of the electrode stack structure 110 may be an inclined side surface which is at an angle θ1 with the thickness direction of the electrode stack structure 110, as shown in FIG. In other possible embodiments, the side surface 110a of the electrode stack structure 110 may be a vertical side surface that substantially coincides with the thickness direction of the electrode stack structure 110. When the side surface 110a of the electrode stack structure 110 is an inclined side surface, for example, the angle θ1 may be between 30 degrees and 60 degrees, the sensing layer 120 is easily formed on the side surface 110a of the electrode stack structure 110 by non-contact printing. When the side surface 110a of the electrode stack structure 110 is a vertical side, the sensing layer 120 can be printed on the electrode stack structure 110 by changing the angle of the printing (for example, changing the nozzle angle and/or the orientation of the electrode stack structure 110). On the side 110a.

In the electrode stack structure 110 of the present embodiment, the number of the first electrode layer 112 and the second electrode layer 114 is plural. During sensing, at least one pair of first electrode layer 112 and second electrode layer 114 are selected to measure a change in resistance of the pair of sensing layers 120 between the first electrode layer 112 and the second electrode layer 114. For example, the first electrode layer 112 can be applied with a first voltage, and the second electrode layers 114 can be applied with a second voltage, such that each of the first electrode layers 112 and the adjacent second electrode layer 114 The required voltage difference is generated. The above voltage difference changes when the resistive environmental sensor 100 senses a particular target (eg, temperature) in the environment. According to the present embodiment, the sensing layer 120 is divided into a plurality of sensing blocks 122 distributed along the side surface 110a according to the respective first electrode layers 112 and the adjacent second electrode layers 114. In other words, the selected pair of first electrode layer 112 and second electrode layer 114 are adjacent first electrode layer 112 and second electrode layer 114, and the length of the sensing block 122 is determined by the first electrode layer 112. The distance from the second electrode layer 114 along the side surface 110a (i.e., the electrode pitch) is determined. The electrode spacing of the first electrode layer 112 and the second electrode layer 114 is related to the thickness of the dielectric layer 116. Since the thickness of the dielectric layer 116 can be easily controlled between 0.01 micrometers and 100 micrometers, the electrode spacing of the first electrode layer 112 and the second electrode layer 114 can be easily controlled to be 0.01 micrometers to 200 micrometers. between. In a preferred embodiment, the electrode spacing between the first electrode layer 112 and the second electrode layer 114 is no more than 1 micron. Thereby, the resistance value and area of the resistive environment sensor 100 can be effectively reduced to improve the sensing sensitivity and the need for miniaturization.

In other possible embodiments, the electrode stack structure 110 may be composed of a single first electrode layer 112, a single second electrode layer 114, and a single dielectric layer 116 sandwiched between the first electrode layer 112 and the second electrode layer 114. . In other words, the sensing layer 120 includes only a single sensing block 122.

As shown in FIG. 1, the sensing layer 120 of the present embodiment is in direct contact with the dielectric layer 116, and the sensing layer 120 can cover a portion of the top surface of the electrode stack structure 110, the side surface 110a of the electrode stack structure 110, and a portion of the substrate. SUB.

It should be noted that the electrode stack structure 110 in this embodiment may further include a protective layer 118, wherein the protective layer 118 covers the first electrode layer 112, the second electrode layer 114, and the dielectric layer 116, and the sensing layer 120 may partially cover the aforementioned protective layer 118. As shown in FIG. 1, the protective layer 118 can protect the first electrode layer 112, the second electrode layer 114, and the dielectric layer 116 underneath to enhance the component reliability of the resistive environment sensor 100.

Referring to FIG. 1 and FIG. 3, the resistive environment sensor 100b of FIG. 3 is similar to the resistive environment sensor 100 of FIG. 1, except that the main difference is: in the resistive environment sensor 100b. There is an air gap G2 between the sensing layer 120 and the dielectric layer 116b, and the sensing layer 120 in the resistive environment sensor 100b is not in contact with the protective layer 118. The foregoing air gap G2 is formed in the patterning process of the dielectric layer 116b. For example, when the dielectric layer 116b is wet etched, the undercut phenomenon occurring on the sidewall of the dielectric layer 116b can form a resistive type. The air gap G2 in the environmental sensor 100b. Compared with the resistive environment sensor 100 of FIG. 1 , the contact area of the sensing layer 120 in the resistive environment sensor 100 b of FIG. 3 with the first electrode layer 112 and the second electrode layer 114 is increased, and Higher sensing sensitivity.

Second embodiment

4 and FIG. 6 are schematic cross-sectional views of a resistive environment sensor according to a second embodiment of the present invention, and FIG. 5 is a view of the first electrode layer, the second electrode layer, the dielectric layer, and the sensing layer of FIG. The top view is schematic.

Referring to FIG. 4 and FIG. 5 , the resistive environment sensor 200 of the present embodiment includes a line carrier 210 and a sensing layer 220 . The line carrier 210 includes at least one first electrode layer 212, at least one second electrode layer 214, and at least one dielectric layer 216 separating the first electrode layer 212 and the second electrode layer 214, wherein the line carrier 210 has at least one recess The groove 210a exposes the first electrode layer 212 and the second electrode layer 214. The sensing layer 220 is disposed in the recess 210a, and the sensing layer 220 is in contact with the first electrode layer 212 and the second electrode layer 214. In this embodiment, the sensing layer 220 is similar to the sensing layer 120 in the first embodiment, and thus will not be repeated herein. The first electrode layer 212, the second electrode layer 214, and the dielectric layer 216 of the line carrier 210 are similar to the first electrode layer 112, the second electrode layer 114, and the dielectric layer 116 of the electrode stack structure 110, respectively. Repeat again.

In this embodiment, the groove 210a has a bottom surface having a shape of a square, a rectangle, a polygon, a circle, an ellipse or the like, and the groove 210a is based on the sensing layer 220 capable of accommodating a sufficient volume. The embodiment does not limit the concave shape. The volume of the tank 210a.

As shown in FIG. 4 and FIG. 5, the first electrode layer 212, the second electrode layer 214, and the dielectric layer 216 are formed on the substrate SUB, and the upper surface of the substrate SUB can be The groove 210a is exposed. In this embodiment, the line carrier 210 includes a plurality of dielectric layers 216 and a plurality of first electrode layers 212 and a plurality of second electrode layers 214 that are alternately stacked, wherein the dielectric layer 216 is disposed adjacent to any two adjacent layers An electrode layer 212 and the second electrode layer 214 are spaced apart to separate the adjacent first electrode layer 212 and the second electrode layer 214. In this embodiment, the number of the first electrode layer 212, the second electrode layer 214, and the dielectric layer 216 can be changed according to actual design requirements.

The foregoing line carrier 210 can be fabricated by a multi-layer multilayer printed circuit board process or a semiconductor process, and the sensing layer 220 can be formed on the line carrier 210 by a three-dimensional printing (3D-printing) process. 210a. In some embodiments, the ink-type or mist-like sensing material can be printed or deposited in the recess 210a of the line carrier 210 by a non-contact printing method to form a contour conforming to the contour of the recess 210a. The layer 220 is measured. As in the first embodiment, since the electrode spacing between the first electrode layer 212 and the second electrode layer 214 has been relatively accurately controlled by the thickness of the dielectric layer 216, the sensing layer 220 does not need to be printed accurately. control. In other words, the sensing layer 220 has a large process margin in fabrication. Accordingly, the manufacturing yield and productivity of the resistive environmental sensor 200 can be effectively improved.

In this embodiment, the sidewall of the recess 210a may be an inclined sidewall that is at an angle θ2 to the thickness direction of the substrate SUB, as shown in FIG. In other possible embodiments, the sidewall of the recess 210a may be a vertical sidewall that substantially coincides with the thickness direction of the substrate SUB. When the sidewall of the recess 210a is an inclined sidewall, for example, the angle θ2 is between 30 degrees and 60 degrees, the sensing layer 220 is easily formed on the sidewall of the recess 210a by non-contact printing; when the recess 210a When the sidewalls are vertical sidewalls, the sensing layer 220 can be printed on the sidewalls of the recess 210a by changing the angle of the printing (eg, changing the nozzle angle and/or the orientation of the line carrier 210).

The resistive environment sensor 200 is similar to the working principle of the resistive environment sensor 100 and will not be described again. Since the thickness of the dielectric layer 216 can be easily controlled between 0.01 micrometers and 100 micrometers, the electrode spacing of the first electrode layer 212 and the second electrode layer 214 can also be easily controlled to be between about 0.01 micrometers and 200 nanometers. Between about micrometers. In a preferred embodiment, the electrode spacing between the first electrode layer 212 and the second electrode layer 214 is no more than 1 micron. Thereby, the resistance value and area of the resistive environment sensor 200 can be effectively reduced to improve the sensing sensitivity and the demand for miniaturization.

In other possible embodiments, the sensing layer 220 includes only a single sensing block 222.

As shown in FIG. 4, the sensing layer 220 of the present embodiment is in direct contact with the dielectric layer 216, and the sensing layer 220 can cover a portion of the top surface of the line carrier 210, a sidewall of the recess 210a, and a portion of the substrate SUB.

It should be noted that the circuit carrier 210 in this embodiment may further include a protection layer 218, wherein the protection layer 218 covers the first electrode layer 212, the second electrode layer 214, and the dielectric layer 216, and the sensing layer 220 may partially cover the aforementioned protective layer 218. As shown in FIG. 4, the protective layer 218 can protect the first electrode layer 212, the second electrode layer 214, and the dielectric layer 216 underneath to enhance the component reliability of the resistive environmental sensor 200.

Referring to FIG. 4 and FIG. 6, the resistive environment sensor 200b of FIG. 6 is similar to the resistive environment sensor 200 of FIG. 4, except that the main difference is: in the resistive environment sensor 200b. There is an air gap G4 between the sensing layer 220 and the dielectric layer 216b, and the sensing layer 220 in the resistive environment sensor 200b is not in contact with the protective layer 218. Compared with the resistive environment sensor 200 of FIG. 4, the contact area of the sensing layer 220 in the resistive environment sensor 200b of FIG. 6 with the first electrode layer 212 and the second electrode layer 214 is increased, and is provided. Higher sensing sensitivity.

Third embodiment

7 and FIG. 9 are schematic cross-sectional views of a resistive environment sensor according to a third embodiment of the present invention, and FIG. 8 is a first electrode layer, a second electrode layer, a dielectric layer, and a sensing layer of FIG. The top view is schematic.

Referring to FIG. 1 and FIG. 7 to FIG. 9, the resistive environmental sensors 300 and 300b of the present embodiment are similar to the resistive environmental sensors 100 and 100b of the first embodiment, respectively, except that: The electrode stack structure 110 in the resistive environment sensors 300 and 300b is an island-like structure protruding from the substrate SUB, and the sensing layer 120a covers the top surface 110b of the electrode stack structure 110 and all the side faces 110a.

In this embodiment, the electrode stack structure 110 has a bottom surface or a top surface having a shape of a square, a rectangle, a polygon, a circle, an ellipse, or the like, and the electrode stack structure 110 is based on the principle of being capable of carrying a sufficient sensing layer 120a. The volume of the electrode stack structure 110 is not limited by way of example.

It is to be noted that the number of the electrode stack structures 110 in the present embodiment is not limited to one, and the plurality of electrode stack structures 110 which are separated from each other and arranged in an array on the substrate SUB are also covered by the present embodiment. The plurality of electrode stack structures 110 arranged in an array on the substrate SUB include different types of sensing layers 120a (eg, at least two of a gas sensing layer, a light sensing layer, a humidity sensing layer, and a temperature sensing layer) The electrode stack structure 110 can form a resistive environmental sensor array with a composite sensing function.

Fourth embodiment

10 and FIG. 12 are schematic cross-sectional views of a resistive environmental sensor array in accordance with a fourth embodiment of the present invention, and FIG. 11 is a top plan view of the resistive environmental sensor array of FIG.

Referring to FIG. 10 to FIG. 12 , the resistive environment sensor array 400 , 400 b of the present embodiment includes a line carrier 410 and a plurality of sensing layers 420 . The circuit carrier 410 includes a first conductive pattern P1, a second conductive pattern P2, and a dielectric layer 416 separating the first conductive pattern P1 and the second conductive pattern P2. The first conductive pattern P1 includes a plurality of separated layers. An electrode layer 412, the second conductive pattern P2 includes a plurality of second electrode layers 414 separated from each other, wherein the line carrier 410 has a plurality of grooves 410a to expose the first electrode layer 412 and the second electrode layer 414. The sensing layer 420 is located within the recess 410a, and the sensing layer 420 is in contact with the first electrode layer 412 and the second electrode layer 414.

In the present embodiment, the aforementioned grooves 410a are arranged in an array, for example, in the line carrier 410, and each of the sensing layers 420 located in the different grooves 410a may be a gas sensing layer, a light sensing layer, and a humidity. At least two of the sensing layer and the temperature sensing layer. When each of the sensing layers 420 in the recess 410a includes different types of sensing layers 420, the resistive environmental sensor array 400 has a composite sensing function. In other possible embodiments, the material of the sensing layer 420 located in the different recesses 410a may be the same.

In summary, in the resistive environment sensor or the resistive environment sensor array, the first electrode layer and the second electrode layer are separated by a dielectric layer, and the first electrode layer is The distance between the second electrode layers (i.e., the electrode pitch) depends on the thickness of the dielectric layer, so that the micron-scale electrode pitch can be easily achieved by properly controlling the thickness of the dielectric layer. In the case where the electrode pitch can be effectively shortened, the resistive environmental sensor or the resistive environmental sensor array has a low resistance value and good sensing sensitivity.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

100, 100b, 200, 300, 300b‧‧‧Resistive environmental sensors
110‧‧‧electrode stack structure
110a‧‧‧ side
110b‧‧‧ top surface
112, 212, 412‧‧‧ first electrode layer
114, 214, 414‧‧‧ second electrode layer
116, 116b, 216, 216b, 416‧‧‧ dielectric layer
118, 218‧‧ ‧ protective layer
120, 120a, 220, 420‧‧ ‧ sensing layer
122, 222‧‧‧ Sensing blocks
210, 410‧‧‧Line carrier
210a, 410a‧‧‧ grooves
400, 400b‧‧‧Resistive Environmental Sensor Array
G2, G4‧‧‧ air gap
P1‧‧‧First conductive pattern
P2‧‧‧Second conductive pattern
SUB‧‧‧ substrate θ1, θ2‧‧‧ angle

1 and 3 are schematic cross-sectional views of a resistive environmental sensor in accordance with a first embodiment of the present invention. 2 is a top plan view of the first electrode layer, the second electrode layer, the dielectric layer, and the sensing layer of FIG. 1. 4 and 6 are schematic cross-sectional views of a resistive environmental sensor in accordance with a second embodiment of the present invention. 5 is a top plan view of the first electrode layer, the second electrode layer, the dielectric layer, and the sensing layer of FIG. 4. 7 and 9 are schematic cross-sectional views of a resistive environmental sensor in accordance with a third embodiment of the present invention. 8 is a top plan view of the first electrode layer, the second electrode layer, the dielectric layer, and the sensing layer of FIG. 7. 10 and 12 are cross-sectional views of a resistive environmental sensor array in accordance with a fourth embodiment of the present invention. 11 is a top plan view of the resistive environmental sensor array of FIG.

100‧‧‧Resistive environmental sensor

110‧‧‧electrode stack structure

110a‧‧‧ side

112‧‧‧First electrode layer

114‧‧‧Second electrode layer

116‧‧‧Dielectric layer

118‧‧‧Protective layer

120‧‧‧Sensor layer

122‧‧‧Sensing block

SUB‧‧‧ substrate

Θ1‧‧‧ angle

Claims (13)

A resistive environment sensor includes: an electrode stack structure including a first electrode layer, a second electrode layer, and a dielectric layer separating the first electrode layer and the second electrode layer, wherein the electrode stack The structure has a side, the first electrode layer and the second electrode layer are exposed on the side of the electrode stack structure; and a sensing layer is disposed on the side of the electrode stack structure, and the sensing layer is The first electrode layer and the second electrode layer are in contact; wherein an environmental change is sensed by sensing a change in resistance of the sensing layer between the first electrode layer and the second electrode layer. The resistive environmental sensor of claim 1, wherein the dielectric layer has a thickness of between 0.01 micrometers and 100 micrometers. The resistive environmental sensor of claim 1, wherein the sensing layer is in contact with the dielectric layer. The resistive environmental sensor of claim 1, wherein the sensing layer and the dielectric layer have an air gap. The resistive environmental sensor of claim 1, wherein the side of the electrode stack structure is at an angle to a thickness direction of the electrode stack structure, and the angle is between 30 degrees and 60 degrees. The resistive environment sensor according to claim 1, wherein the sensing layer is formed on the side of the electrode stack by a three-dimensional printing process, and the sensing layer comprises a layer of tantalum and carbon Rice tube layer, graphene layer, graphene layer oxide layer, zinc oxide layer, tin dioxide layer, indium oxide layer, tungsten trioxide layer, magnesium oxide layer, titanium dioxide layer, ferric oxide layer, nickel layer, Copper layer or gold cluster layer. The resistive environmental sensor of claim 1, further comprising at least one groove, the surface of the at least one groove being the side of the electrode stack structure. An array of resistive environmental sensors, comprising: a line carrier, comprising a first conductive pattern, a second conductive pattern, and a dielectric layer separating the first conductive pattern and the second conductive pattern, the first The conductive pattern includes a plurality of first electrode layers separated from each other, the second conductive pattern includes a plurality of second electrode layers separated from each other, wherein the circuit carrier has a plurality of grooves to form the first electrode layers The second electrode layer is exposed; and the plurality of sensing layers are located in the recesses, and the sensing layers are in contact with the first electrode layers and the second electrode layers; wherein, by sensing the A change in electrical resistance of the sensing layer between an electrode layer and the second electrode layer senses an environmental change. The resistive environmental sensor array of claim 8, wherein each of the dielectric layers has a thickness of between 0.01 micrometers and 100 micrometers. The resistive environmental sensor array of claim 8, wherein the sensing layers are in contact with the dielectric layer. The resistive environmental sensor array of claim 8, wherein each of the sensing layer and the dielectric layer has an air gap. The resistive environmental sensor array of claim 8, wherein each of the sensing layers is formed in the grooves by a three-dimensional printing process, and each of the sensing layers comprises a layer of tantalum and carbon Rice tube layer, graphene layer, graphene layer oxide layer, zinc oxide layer, tin dioxide layer, indium oxide layer, tungsten trioxide layer, magnesium oxide layer, titanium dioxide layer, ferric oxide layer, nickel layer, Copper layer or gold cluster layer. The resistive environmental sensor array of claim 8, wherein the sensing layers comprise at least two of a gas sensing layer, a light sensing layer, a humidity sensing layer, and a temperature sensing layer.