TWI601944B - Thermal pressure sensor manufacturing process - Google Patents

Description

Thermal pressure sensor manufacturing method

This creation is directed to a method of making a thermal pressure sensor, and more particularly to a method of making a thermal pressure sensor having a wide effective pressure measurement range.

The sensing principle of a thermal pressure sensor is to perform gas pressure sensing by a mechanism in which the gas heat conduction of its internal components changes with changes in gas pressure. When the gas thermal conductivity changes, the temperature of the component changes and the sense of change changes. Measure the physical characteristics of the component.

If the thermal energy generated by the sensing component of the thermal pressure sensor is too easy to be lost, the temperature of the sensing component cannot be effectively increased, which may affect the sensing effect of the thermal pressure sensor, so the thermal pressure sensor usually has prevention Heat-dissipating suspension structure. When current flows through the sensing element, the thermal energy generated by the sensing element does not easily dissipate outward through the thermal conduction path, and thus the temperature of the sensing element rises. 7 is a schematic cross-sectional view of a conventional thermal pressure sensor. As shown in FIG. 7, the conventional thermal pressure sensor 70 mainly includes a sensing resistor 71, a semiconductor substrate 72, and an insulating structure layer 76. A hole 73 is formed on the substrate 72. The sensing resistor 71 and the insulating structure layer 76 are disposed above the cavity 73. The insulating structure layer 76 is in contact with the semiconductor substrate 72 as a supporting structure, and both ends of the sensing resistor 71 extend. On the semiconductor substrate 72. Therefore, the main heat dissipation path of the sensing resistor 71 includes a solid thermal conduction path 74 and a gas thermal conduction path 75, and the solid thermal conduction path 74 is generated by the sensing resistor 71 that is energized by the sensing resistor 71 and the insulating structure layer 76. The thermal energy is conducted to the semiconductor substrate 72, and the gas thermal conduction path 75 is mainly thermally conducted by collision of gas molecules in the space between the semiconductor substrate 72 and the sensing resistor 71. Within the measurable pressure range, the thermal conductivity of the gas increases as the number of molecules increases, and the number of gas molecules is proportional to the gas pressure. Therefore, when the gas pressure changes, the thermal conductivity of the gas changes, causing the temperature of the sensing resistor 71 to change. The resistance value of the sensing resistor 71 is affected. Since the existing sensing resistor 71 and the semiconductor substrate 72 have good thermal insulation effects, the heat conduction effect of the solid thermal conduction path 74 is lower than the gas thermal conduction path 75 under normal pressure.

According to the above, the heat conduction of the pressure sensor affects the sensing effect of the sensing component, thereby affecting the range of the pressure measured by the pressure sensor, and the main parameters affecting the pressure measurement range are the lower pressure limit and the pressure amount. The upper limit is measured as follows:

1. The lower limit of pressure measurement is determined by solid thermal conductivity: under normal pressure, the main thermal conduction mechanism of the thermal pressure sensor is gas thermal conductivity. When the pressure drops, the effect of gas thermal conductivity will be smaller, sensing. The temperature of the component is gradually less likely to be lost due to the thermal conduction of the gas. When the pressure drops to the thermal conductivity of the gas, the effect is less than the solid thermal conductivity. At this time, the thermal conductivity of the sensing element is dominated by the solid thermal conduction independent of the pressure, and the temperature of the sensing element is sensed. The change is minimal and the lower limit of the pressure measurement of the sensing element is limited by the solid thermal conductivity of the sensing element.

2. The upper limit of pressure measurement is determined by the spacing between the sensing element and the semiconductor substrate: the mechanism of gas thermal conduction can be divided into two categories: A. The average free path of the gas is smaller than the distance between the sensing element and the semiconductor substrate. , B. The gas mean free path is near or greater than the spacing between the sensing element and the semiconductor substrate. Since the mean free path of the gas is inversely proportional to the pressure, the average free path of the gas increases as the pressure is decreasing, so if the average free path of the gas is close to or greater than the spacing between the sensing element and the semiconductor substrate, The effect of gas thermal conductivity is proportional to the pressure. When the pressure is increased, the average free path of the gas becomes small. If the average free path of the gas is smaller than the distance between the sensing element and the semiconductor substrate, the thermal conductivity of the gas is independent of the pressure change. Therefore, the spacing between the sensing element and the semiconductor substrate is a factor that affects the upper limit of the pressure measurement.

FIG. 8A shows a schematic view of a conventional thermal pressure sensor 80A. As shown in FIG. 8A, the thermal pressure sensor 80A mainly includes a sensing element 81A and a semiconductor substrate 82A, and an opening 83A with an opening upward is formed between the sensing element 81A and the semiconductor substrate 82A, and A floating structure 84A is formed above the recess 83A, and the sensing element 81A is disposed on the floating structure 84A. Through such a design, The solid thermal conduction is primarily performed using the support arm 85A of the suspension structure 84A, thereby reducing the solid path through which the sensing element 81A can conduct heat to the semiconductor substrate 82A. Since the contact area between the sensing element 81A and the semiconductor substrate 82A is small, and a recess 83A is formed in the semiconductor substrate 82A so that heat is not easily transmitted from the sensing element 81A to the semiconductor substrate 82A, the solid thermal conduction is performed. The resulting heat transfer is less affected, and the lower limit of the pressure measurement can be to the lower pressure lower limit. However, there is a large hollow space between the sensing element 81A and the semiconductor substrate 82A, and the gas thermal conductivity effect makes the upper limit of the pressure measurement lower.

Please refer to FIG. 8B, which shows another conventional thermal pressure sensor 80B. The thermal pressure sensor 80B also includes a sensing element 81B and a semiconductor substrate 82B, as is apparent from FIG. 8B, as compared with FIG. 8A, the connection portion 83B between the sensing element 81B and the semiconductor substrate 82B has a large area, resulting in a large effect of solid heat conduction, but the space 84B between the sensing element 81B and the semiconductor substrate 82B is small, so The upper limit of the pressure measurement of the heat type pressure sensor 80B may have a higher upper limit of the pressure measurement, but the lower limit of the pressure measurement of the heat type pressure sensor 80B also has a lower limit of the lower pressure measurement. Figure 9 is a graph showing the relationship between pressure and thermal conductivity of the thermal pressure sensor of Figures 8A and 8B. In comparison with the two thermal pressure sensors of Figures 8A and 8B, it is apparent from Figure 9 that the thermal pressure sensor 80A of Figure 8A has a lower pressure lower limit but also has a lower The upper pressure limit, while the thermal pressure sensor 80B of Figure 8B has a higher upper pressure limit, but the lower pressure limit is also higher.

According to the above, there is a need to design a thermal pressure sensor that can simultaneously have a higher pressure measurement upper limit and a lower pressure measurement lower limit, so that the thermal pressure sensor has a wider effective pressure measurement range. .

The purpose of this creation is to provide a process method for a thermal pressure sensor that can be fabricated to include a wide range of effective pressure measurements.

In accordance with the above objects, the present invention discloses a method of manufacturing a thermal pressure sensor comprising: Forming a first insulating layer on a substrate; forming a sacrificial layer on the surface of the first insulating layer; forming a second insulating layer on the surface of the first insulating layer and the sacrificial layer; on the surface of the second insulating layer Forming at least one first sensing resistor and at least one second sensing resistor, respectively, and disposing the at least one first sensing resistor and the at least one second sensing resistor separately; etching the first insulating layer and the first And forming a first space and a second space under the at least one first sensing resistor and the at least one second sensing resistor. Another object of the present invention is to provide a method of manufacturing a thermal pressure sensor by which a higher pressure measurement upper limit and a lower pressure measurement lower limit can be provided.

According to the above object, the present invention discloses a method for manufacturing a thermal pressure sensor, comprising: forming a first insulating layer on a substrate; forming at least one first sensing resistor on a surface of the first insulating layer Forming a second insulating layer on the first insulating layer, the at least one first sensing resistor and the surface of the sacrificial layer; forming at least one second sensing resistor on the second insulating layer; etching Forming a plurality of through holes through the first insulating layer and the second insulating layer; forming a first space and a portion of the at least one first sensing resistor and the at least one second sensing resistor respectively through the through holes Two spaces.

The thermal pressure sensor of the present invention has a wide effective measurement range, so that the existing thermal pressure sensor can be applied in a wider range, and also has good heat insulation effect, and is in the process. There are no extra steps to add.

10‧‧‧Thermal pressure sensor

101‧‧‧Substrate

102‧‧‧First insulation

103‧‧‧Second insulation

104‧‧‧First sense resistor

105‧‧‧Second sensing resistor

106‧‧‧Perforation

107‧‧‧First space

108‧‧‧Second space

109‧‧‧Protective layer

110‧‧‧ Sacrifice layer

111‧‧‧Electrical cable

61‧‧‧First thermal pressure sensor

62‧‧‧Second hot pressure sensor

63‧‧‧ Third thermal pressure sensor

70‧‧‧Thermal pressure sensor

71‧‧‧Sensor components

72‧‧‧Semiconductor substrate

73‧‧‧ Hole

74‧‧‧Solid thermal conductivity pathway

75‧‧‧Gas thermal conduction pathway

76‧‧‧Insulation structural layer

80A‧‧‧Thermal pressure sensor

81A‧‧‧Sensor components

82A‧‧‧Semiconductor substrate

83A‧‧‧ Groove

84A‧‧‧suspension structure

85A‧‧‧Support arm

80B‧‧‧Thermal pressure sensor

81B‧‧‧Sensor components

82B‧‧‧Semiconductor substrate

83B‧‧‧Connecting Department

84B‧‧‧ Space

1A is a plan view of the thermal pressure sensor of the present invention; FIG. 1B is a cross-sectional view of the thermal pressure sensor of FIG. 1A; FIG. 1C is a cross-sectional view of the thermal pressure sensor of another embodiment; 2 is a flow chart of the thermal pressure sensor of the present embodiment; FIG. 3A to FIG. 3G are schematic diagrams showing the manufacturing process of the thermal pressure sensor of the present invention; FIG. 4 is a heat of another embodiment of the present invention. FIG. 5A to FIG. 5G are schematic diagrams showing a manufacturing process of a thermal pressure sensor according to another embodiment of the present invention; FIG. 6 is a thermal pressure sensor of the present invention and an existing pressure sense FIG. 7 is a schematic diagram of a conventional thermal pressure sensor; FIGS. 8A and 8B are schematic diagrams of a conventional thermal pressure sensor; and FIG. 9 is a graph of a conventional pressure sensor.

The technical means adopted by the present invention for achieving the intended purpose of the invention are further explained below in conjunction with the drawings and the preferred embodiments of the present invention.

FIG. 1A is a top plan view of the thermal pressure sensor of the present invention. 1B is a schematic cross-sectional view of the thermal pressure sensor of FIG. 1A. As shown in FIG. 1A and FIG. 1B, the thermal pressure sensor 10 of the present invention mainly comprises a substrate 101, a first insulating layer 102, a second insulating layer 103, at least one first sensing resistor 104, and at least A second sensing resistor 105, a plurality of through holes 106, a first space 107 and a second space 108.

In this embodiment, the first insulating layer 102 is disposed on the surface of the substrate 101, the second insulating layer 103 is disposed on the surface of the first insulating layer 102, and the first sensing resistor 104 and the second sensing resistor 105 are formed. On the surface of the second insulating layer 103. However, in different embodiments, the first sensing resistor 104 may be formed on the surface of the first insulating layer 102, and then the second insulating layer 103 covers the first sensing resistor. 104 and the first insulating layer 102, and then a second sensing resistor 105 is formed over the second insulating layer 103 (as shown in FIG. 5G, which will be described later). In different embodiments, if the first sensing resistor 104 and the second sensing resistor 105 have the same characteristics, for example, both have a positive temperature coefficient of resistance or a negative temperature coefficient of resistance, the first sensing resistor 104 and the second The sensing resistor 105 can be disposed on the surface of the second insulating layer 103 as shown in FIG. 1B; or if the first sensing resistor 104 and the second sensing resistor 105 have opposite characteristics, for example, the first sensing resistor 104 is a positive resistance temperature. The second sensing resistor 105 is a negative resistance temperature coefficient, or the first sensing resistor 104 is a negative resistance temperature coefficient and the second sensing resistor 105 is a positive resistance temperature coefficient, as shown in FIG. 5G, the second The insulating layer 103 is disposed between the first sensing resistor 104 and the second sensing resistor 105 to isolate the first sensing resistor 104 and the second sensing resistor 105. In addition, in other possible embodiments of the present invention, referring to FIG. 1C , the thermal pressure sensor 10 may include a protective layer 109 , and the first sensing resistor 104 and the second sensing resistor are covered by the protective layer 109 . 105 and the second insulating layer 103.

The thermal pressure sensor 10 of the present invention includes a plurality of electrical connection lines 111 disposed on opposite sides of the first sensing resistor 104, and forming a plurality of layers on the two sides of the first sensing resistor 104 and the second sensing resistor 105, respectively. Perforation 106. The substrate 101 forms a first space 107, the first space 107 is located below the first sensing resistor 104, and the second space 108 is located below the second sensing resistor 105, and the depth of the first space 107 is greater than the first The depth of the second space 108. When the first sensing resistor 104 and the second sensing resistor 105 are both a positive temperature coefficient of resistance or a negative temperature coefficient of resistance, the first sensing resistor 104 and the second sensing resistor 105 can use the same material, so Formed between the first insulating layer 102 and the second insulating layer 103, as shown in the embodiment of FIGS. 1A and 1B. When the first sensing resistor 104 and the second sensing resistor 105 are respectively a positive resistance temperature coefficient and a negative resistance temperature coefficient, the first sensing resistor 104 and the second sensing resistor 105 are different materials, so the first is formed first. The sensing resistor 104 is above the first insulating layer 102, and then the second insulating layer 103 is formed over the first sensing resistor 104, and then the second sensing resistor 105 is formed above the second insulating layer 103. The first sensing resistor 104 and the second sensing resistor 105 are separated by the second insulating layer 103.

The structure of the thermal pressure sensor of the present invention has a first sensing resistor 104 and a second sensing resistor 105. The first sensing resistor 104 and the second sensing resistor 105 respectively correspond to different sizes of the first space 107 and The second space 108 causes the first sensing resistor 104 and the second sensing resistor 105 to have different degrees of solid thermal conduction effect and gas thermal conduction effect, and the larger first space 107 makes the first sensing resistor 104 lower. The lower limit of the pressure measurement and the lower pressure measurement upper limit, the smaller second space 108 causes the second sensing resistor 105 to have a higher pressure measurement lower limit and a higher pressure measurement upper limit (the principle is as before According to the technique, based on the complementary effect of the first sensing resistor 104 and the second sensing resistor 105, the heat-type pressure sensor of the present invention as a whole includes a wider effective pressure measuring range.

Fig. 2 is a flow chart showing the thermal pressure sensor of the present embodiment. As shown in FIG. 2, and referring to FIG. 1B and FIG. 3A to FIG. 3G, first, in step S201, referring to FIG. 3A, a first insulating layer 102 is formed on a substrate 101. Next, in step S202, referring to FIG. 3B, a sacrificial layer 110 is formed in a second space forming region of the surface of the first insulating layer 102, and in step S203, please refer to FIG. 3C, in the first insulating layer. A second insulating layer 103 is formed on the surface of the layer 102, and the second insulating layer 103 covers the sacrificial layer 110. In step S204, referring to FIG. 3D, at least one first sensing resistor 104 and at least one second sensing resistor 105 are formed on the surface of the second insulating layer 103, and the first sensing resistor 104 and the second sensing resistor 105 are formed. The configuration is not limited herein, and the first or second sensing resistors 104, 105 are not limited to the ones shown in the drawings, and may be linear, curved or curved. In this embodiment, The first sensing resistor 104 and the second sensing resistor 105 are both a positive temperature coefficient of resistance or a negative temperature coefficient of resistance, and thus can be formed in the same process. A plurality of electrical connection lines 111 are formed on the second insulating layer 103 while forming the first sensing resistor 104 and the second sensing resistor 105. In addition, after the step S204 is completed, in step S205, please refer to FIG. 3E, a protective layer 109 is formed on the surface of the first sensing resistor 104 and the second sensing resistor 105, so that the protective layer 109 covers the first layer. A sensing resistor 104, a second sensing resistor 105 and an electrical connection line 111, however, in various embodiments, the step of forming the protective layer 109 may not be included, and is not limited herein. In step S206, referring to FIG. 3F, the etching is located in the first sensing. The first insulating layer 102 and the second insulating layer 103 on both sides of the resistor 104 and the second sensing resistor 105 are formed to form a plurality of through holes 106. If the protective layer 109 is included in this embodiment, the protective layer 109 is simultaneously etched. The first insulating layer 102 and the second insulating layer 103 are formed with a plurality of through holes 106 such that the surface of the substrate 101 and the surface of the sacrificial layer 110 are exposed to the through holes 106. Then, in step S207, referring to FIG. 3G, a first space 107 and a second space 108 are formed under the first sensing resistor 104 and the second sensing resistor 105 respectively through the through holes 106. The first space 107 is formed by etching the substrate 101 using a bulk micromachining technique. The first space 107 is a ladder type in the presently-created embodiment, however in various embodiments the first space 107 may have other shapes, Not limited. In addition, the second space 108 is formed by etching the sacrificial layer 110 by a surface micromachining technique, and the depth of the first space 107 is greater than the depth of the second space 108. The bulk micromachining technology and the surface micromachining technology are well known to those of ordinary skill in the art and will not be described herein.

Through the above steps, the creation of the heat-type pressure sensor is completed. Compared with the conventional heat-type pressure sensor, there is no additional process step, and the hot-type pressure sensor can be obtained. Higher pressure upper limit and lower pressure lower limit.

4 is a flow chart showing a thermal pressure sensor of another embodiment of the present creation. As shown in FIG. 4, and referring to FIG. 1B and FIG. 5A to FIG. 5G, first, referring to FIG. 5A, in step S401, a first insulating layer 102 is formed on a substrate 101. Next, in step S402, referring to FIG. 5B, at least one first sensing resistor 104 and a sacrificial layer 110 are formed on the surface of the first insulating layer 102, and further, when the first sensing resistor 104 is formed, A plurality of electrical connections 111 are formed on the first insulating layer 102. In step S403, referring to FIG. 5C, a second insulating layer 103 is formed on the surface of the first insulating layer 102, the at least one first sensing resistor 104 and the sacrificial layer 110, so that the second insulating layer 103 The first insulating layer 102, the at least one sensing resistor 104 and the sacrificial layer 110 are covered. In step S404, referring to FIG. 5D, at least one second sensing resistor 105 is formed on the surface of the second insulating layer 103. In this embodiment, the first sensing resistor 104 and the second sensing resistor 105 are respectively For the positive resistance temperature coefficient and the negative resistance temperature coefficient, Therefore, different materials are required to be applied in different process steps (step S402 and step S404) to form the first sensing resistor 104 and the second sensing resistor 105.

In addition, after the step S404 is completed, in step S405, referring to FIG. 5E, a protective layer 109 is formed on the surface of the second sensing resistor 105 and the second insulating layer 103, so that the protective layer 109 covers the second layer. The resistor 105 and the second insulating layer 103 are sensed. However, in different embodiments, the step of forming the protective layer 109 may not be included, and is not limited herein. Next, in step S406, referring to FIG. 5F, the first insulating layer 102 and the second insulating layer 103 are etched to form a plurality of vias 106. In this embodiment, the protective layer 109 is included, and the protective layer 109 is simultaneously etched. The first insulating layer 102 and the second insulating layer 103 are formed with a plurality of through holes 106 such that the surface of the substrate 101 and the surface of the sacrificial layer 110 are exposed to the through holes 106. Further, in step S406, the first insulating layer 102 and the second insulating layer 103 on both sides of the at least one first sensing resistor 104 and the at least one second sensing resistor 105 are etched to form the through holes. 106. Then, in step S407, a first space 107 and a second space 108 are formed under the first sensing resistor 104 and the second sensing resistor 105 respectively through the through holes 106. Similarly, the first space 107 is formed by etching the substrate 101 by a bulk micromachining technique, the second space 108 is formed by etching the sacrificial layer 110 by a surface micromachining technique, and the second space 108 corresponds to the second sensing resistor 105, and The depth of the first space 107 is different from the depth of the second space 108.

Through the above steps, the creation of the thermal pressure sensor of the present invention can also be completed, and in this embodiment, the first sensing resistor 104 and the second sensing resistor 105 are a positive temperature coefficient of resistance and a negative temperature coefficient of resistance, respectively. The first sensing resistor 104 and the second sensing resistor 105 are made of different materials, and therefore need to be completed in different process steps. In addition, the thermal pressure sensor in this embodiment also has a higher upper pressure limit and a lower lower pressure limit.

Figure 6 is a graph of the thermal pressure sensor of the present invention and the existing pressure sensor. As shown in FIG. 6, the effective pressure range measured by the first thermal pressure sensor 61, the second thermal pressure sensor 62 and the third thermal pressure sensor 63 is compared. The existing first thermal sensor 61 has a lower The pressure measurement upper limit, but also has a lower pressure measurement lower limit, the existing second thermal sensor 62 has a higher pressure measurement lower limit, but also has a higher pressure measurement upper limit. The third thermal pressure sensor 63 of the present invention has a lower pressure measurement upper limit and a higher pressure measurement upper limit. The third thermal pressure sensor of the present invention can be clearly seen from the figure. The 63 has a wider effective measurement range than the existing first thermal pressure sensor 61 and the second thermal pressure sensor 62.

In summary, the thermal pressure sensor of the present invention has a wide effective measurement range, so that the existing thermal pressure sensor can be applied in a wider range, and also has a good heat insulation effect, and There are no extra steps to make in the process.

The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way. Although the present invention has been disclosed above in the preferred embodiments, it is not intended to limit the present invention, and any person skilled in the art, The equivalents of the above-described technical contents may be modified or modified to equivalent changes without departing from the spirit and scope of the present invention. Any simple modifications, equivalent changes and modifications made to the above embodiments are still within the scope of the present technical solution.

Claims (9)

A method for manufacturing a thermal pressure sensor, comprising: forming a first insulating layer on a substrate; forming a sacrificial layer on a surface of the first insulating layer; forming a surface of the first insulating layer and the sacrificial layer a second insulating layer; at least one first sensing resistor and at least one second sensing resistor are respectively formed on the surface of the second insulating layer, and the at least one first sensing resistor and the at least one second sensing are respectively formed The resistors are separately disposed; the first insulating layer and the second insulating layer are disposed on the two sides of the at least one first sensing resistor and the at least one second sensing resistor to form a plurality of perforations to make the surface of the substrate And the surface of the sacrificial layer is exposed to the through holes; the substrate and the sacrificial layer are etched through the plurality of through holes to respectively be respectively at the at least one first sensing resistor and the at least one second sensing resistor A first space and a second space are formed below, the size of the first space is greater than the size of the second space, and the depth of the first space is greater than the depth of the second space. The method of manufacturing the thermal pressure sensor of claim 1, wherein the step of etching the first insulating layer and the second insulating layer to form the through holes is further included in the at least one first The sensing resistor forms a protective layer over the at least one of the second sensing resistors. The method of manufacturing the thermal pressure sensor of claim 1, wherein the step of forming the at least one first sensing resistor and the at least one second sensing resistor on the second insulating layer further comprises A plurality of electrical connection lines are formed over the second insulating layer. The method of manufacturing a thermal pressure sensor according to claim 1, wherein in the step of etching the first insulating layer and the second insulating layer to form the through holes, etching the at least one first sensing resistor And the first insulating layer and the second insulating layer on both sides of the at least one second sensing resistor to form the The perforations are formed by etching the substrate from the perforations using bulk micromachining techniques, and the second space is formed by etching the sacrificial layer from the vias using surface micromachining techniques. The method of manufacturing the thermal pressure sensor of claim 1, wherein the at least one first sensing resistor and the at least one second sensing resistor both have a positive temperature coefficient of resistance or both have a negative temperature coefficient of resistance. A method for manufacturing a thermal pressure sensor, comprising: forming a first insulating layer on a substrate; forming at least a first sensing resistor and a sacrificial layer on a surface of the first insulating layer; Forming a second insulating layer on the surface of the first insulating layer, the at least one first sensing resistor and the sacrificial layer; forming at least one second sensing resistor on the second insulating layer; and etching at the first one The sensing resistor and the first insulating layer and the second insulating layer on both sides of the at least one second sensing resistor form a plurality of perforations, so that the surface of the substrate and the surface of the sacrificial layer are exposed to the perforations; Etching the substrate and the sacrificial layer through the through holes to form a first space and a second space respectively under the at least one first sensing resistor and the at least one second sensing resistor, the first The size of the space is greater than the size of the second space, and the depth of the first space is greater than the depth of the second space. The method of manufacturing a thermal pressure sensor according to claim 6, wherein the step of etching the first insulating layer and the second insulating layer to form the through holes is further included in the at least one first The sensing resistor forms a protective layer over the at least one of the second sensing resistors. The method of manufacturing the thermal pressure sensor of claim 6, wherein the step of forming the at least one first sensing resistor and the at least one second sensing resistor on the second insulating layer further comprises Forming a plurality of electrical connection lines above the second insulating layer, and the at least one first sensing resistor and the at least one second sensing resistor respectively have a positive temperature coefficient of resistance and a negative temperature coefficient of resistance. The method of manufacturing a thermal pressure sensor according to claim 6, wherein in the step of etching the first insulating layer and the second insulating layer to form the through holes, etching the at least one first sensing resistor And the first insulating layer and the second insulating layer on both sides of the at least one second sensing resistor to form the through holes, and the first space is etched by the body micromachining technology corresponding to at least one first sensing The substrate is formed under the resistor, and the second space is formed by etching the sacrificial layer by surface micromachining.