TWI600899B - Thermal sensing element - Google Patents
Thermal sensing element Download PDFInfo
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Description
本創作係有關於一種感測元件，特別是一種可提升量測電路輸出之感測訊號的熱型感測元件。The present invention relates to a sensing component, and more particularly to a thermal sensing component that can enhance the sensing signal output by the measuring circuit.
熱型感測元件的感測機制為熱型感測元件的感測材料會因溫度變化而使感測材料特性改變，再藉由量測電路將感測材料特性變異量轉換為訊號輸出。熱型感測元件的製作方式是在具有良好隔熱效果之半導體材料的懸浮結構上設置一個具有電阻溫度係數的感測電阻。當電流通過懸浮結構上的感測電阻時，因熱不易散失，將使感測電阻之溫度高於室溫，感測電阻的溫度將隨其感測的物理量變化而改變，進而改變其電阻值。The sensing mechanism of the thermal sensing element is that the sensing material of the thermal sensing element changes the characteristic of the sensing material due to temperature changes, and the sensing material characteristic variation amount is converted into a signal output by the measuring circuit. The heat-sensitive sensing element is fabricated by providing a sensing resistor having a temperature coefficient of resistance on a floating structure of a semiconductor material having a good heat insulating effect. When the current passes through the sensing resistor on the floating structure, the heat is not easily lost, and the temperature of the sensing resistor is higher than room temperature, and the temperature of the sensing resistor changes with the physical quantity sensed by the sensing, thereby changing the resistance value. .
請參閱圖12，現有的熱型感測元件120包含一基板121、一絕緣層122、一感測電阻123與一空腔124。絕緣層122設置於該基板121上，感測電阻123設置於絕緣層122上，在熱型感測元件120的基板121內部鏤空形成空腔124，使位於空腔124上方的絕緣層122與感測電阻123形成一懸浮結構125，由於懸浮結構125僅透過懸浮結構125的連接部126連接設於該基板121上的絕緣層122，可降低感測電阻123與基板121之間的熱傳導效果，減少感測電阻123所產生的熱傳遞至基板121而改善感測效果。Referring to FIG. 12 , the conventional thermal sensing component 120 includes a substrate 121 , an insulating layer 122 , a sensing resistor 123 , and a cavity 124 . The insulating layer 122 is disposed on the substrate 121, and the sensing resistor 123 is disposed on the insulating layer 122. The cavity 124 is hollowed out inside the substrate 121 of the thermal sensing element 120 to provide an insulating layer 122 and a feeling above the cavity 124. The measuring resistor 123 forms a floating structure 125. Since the floating structure 125 connects only the insulating layer 122 provided on the substrate 121 through the connecting portion 126 of the floating structure 125, the heat conduction effect between the sensing resistor 123 and the substrate 121 can be reduced, and the heat dissipation effect can be reduced. The heat generated by the sensing resistor 123 is transferred to the substrate 121 to improve the sensing effect.
請參閱圖13，熱型感測元件常應用於由四個電阻所組成的量測電路，例如惠斯登電橋(Wheatstone Bridge)130等，來進行量測。惠斯登電橋130包含第一電阻131、第二電阻132、第三電阻133與第四電阻134，因感測元件之電阻值會隨溫度改變而變化，藉由惠斯登電橋130中間電位差變化來量測物理量。如圖13所示，在此惠斯登電橋130中，以熱型感測元件作為第三電阻133，而第一電阻131、第二電阻132與第四電阻134為一般不會隨溫度改變的電阻，第一電阻131、第二電阻132、第三電阻133與第四電阻134的電阻值分別為R1 、R2 、R3 (T)與R4 。惠斯登電橋的公式如下：Referring to FIG. 13, the thermal sensing element is often applied to a measuring circuit composed of four resistors, such as a Wheatstone Bridge 130, for measurement. The Wheatstone bridge 130 includes a first resistor 131, a second resistor 132, a third resistor 133 and a fourth resistor 134, because the resistance value of the sensing component changes with temperature, by the middle of the Wheatstone bridge 130 The potential difference changes to measure the physical quantity. As shown in FIG. 13, in the Wheatstone bridge 130, the thermal sensing element is used as the third resistor 133, and the first resistor 131, the second resistor 132 and the fourth resistor 134 generally do not change with temperature. The resistances of the first resistor 131, the second resistor 132, the third resistor 133, and the fourth resistor 134 are R 1 , R 2 , R 3 (T), and R 4 , respectively . The formula for the Wheatstone Bridge is as follows:
，， , ,
V12為第一電阻131與第二電阻132之間的節點的電壓，V34為第三電阻133與第四電阻134之間的節點的電壓，Vb為惠斯登電橋130的操作電壓。若第三電阻133具有正電阻溫度係數(positive temperature coefficient of resistance，PTCR)，其電阻值R3 (T)與溫度呈正比。當所感測之物理量產生變化時，例如當氣體壓力上升使得感測元件的氣體熱導(thermal conductance)增加，因而引起感測元件之溫度下降而致使第三電阻133電阻值R3 (T)亦隨之變小，此時V34的電壓增加，而V12的電壓因為與溫度無關維持不變，因此輸出電壓的變化量Vs將增加，即可藉由輸出電壓的變化量計算出對應的感測物理量之讀值。V12 is the voltage of the node between the first resistor 131 and the second resistor 132, V34 is the voltage of the node between the third resistor 133 and the fourth resistor 134, and Vb is the operating voltage of the Wheatstone bridge 130. If the third resistor 133 has a positive temperature coefficient of resistance (PTCR), its resistance value R 3 (T) is proportional to the temperature. When the sensed physical quantity changes, for example, when the gas pressure rises, the thermal conductance of the sensing element increases, thereby causing the temperature of the sensing element to drop, so that the resistance value R 3 (T) of the third resistor 133 is also As it becomes smaller, the voltage of V34 increases, and the voltage of V12 remains unchanged regardless of the temperature, so the amount of change Vs of the output voltage will increase, and the corresponding sensing physical quantity can be calculated by the amount of change of the output voltage. Reading value.
然而，隨著微機電技術的進步，感測元件的尺寸越來越小，導致上述之惠斯登電橋在操作時，根據感測電阻123的電阻變化量所能計算出的感測訊號不高。若能提高所能量測的感測訊號，可改善因感測元件微小化過程中訊號亦隨之變小的問題。因此，存在需求設計一種熱型感測元件，可提升量測電路所輸出的感測訊號，改善上述之問題。However, with the advancement of MEMS technology, the size of the sensing element is getting smaller and smaller, resulting in the sensing signal that can be calculated according to the resistance change of the sensing resistor 123 when the Wheatstone bridge described above is operated. high. If the sensing signal of the energy measurement can be improved, the problem that the signal is also reduced due to the miniaturization of the sensing element can be improved. Therefore, there is a need to design a thermal sensing element that can improve the sensing signal output by the measuring circuit and improve the above problems.
本創作之目的在提供一種熱型感測元件，透過此熱型感測元件可以提升量測電路所輸出的感測訊號，改善感測元件因微小化過程中訊號亦隨之變小的問題。The purpose of the present invention is to provide a thermal sensing component through which the sensing signal outputted by the measuring circuit can be improved, and the problem that the signal of the sensing component becomes smaller during the miniaturization process is also improved.
根據上述目地，本創作提供一種熱型感測元件，包含： 一基材； 一第一絕緣層，設置於該基材上； 至少一第一感測電阻，設置於該第一絕緣層的上方； 至少一第二感測電阻，設置於該第一絕緣層的上方，且與該第一感測電阻分離設置； 複數個穿孔，設置於該些電連接線的兩側； 一空腔，形成於該第一感測電阻與該第二感測電阻下方； 其中該第一感測電阻與該第二感測電阻係應用於一惠斯登電橋，該惠斯登電橋包含一第一電阻、一第二電阻、一第三電阻與一第四電阻，該至少一第一感測電阻與該至少一第二感測電阻取代該惠斯登電橋之該第一電阻、該第二電阻、該第三電阻與該第四電阻中至少兩個電阻。According to the above object, the present invention provides a thermal sensing element, comprising: a substrate; a first insulating layer disposed on the substrate; at least one first sensing resistor disposed above the first insulating layer At least one second sensing resistor is disposed above the first insulating layer and disposed apart from the first sensing resistor; a plurality of through holes are disposed on both sides of the electrical connecting lines; a cavity is formed on The first sensing resistor and the second sensing resistor are below; wherein the first sensing resistor and the second sensing resistor are applied to a Wheatstone bridge, and the Wheatstone bridge includes a first resistor a second resistor, a third resistor, and a fourth resistor, the at least one first sensing resistor and the at least one second sensing resistor replacing the first resistor and the second resistor of the Wheatstone bridge And at least two resistors of the third resistor and the fourth resistor.
透過在同一個熱型感測元件上增加感測電阻的數量，並配合惠斯登電橋之量測電路的電阻位置配置，可大幅提升感測訊號，改善感測元件在微小化的過程中訊號亦隨之變小的問題。By increasing the number of sense resistors on the same thermal sensing element and matching the resistance position configuration of the measuring circuit of the Wheatstone bridge, the sensing signal can be greatly improved, and the sensing component can be improved in the process of miniaturization. The signal has also become smaller.
圖1A為本創作熱型感測元件之第一實施例的平面示意圖，圖1B為圖1A的A-A剖面示意圖。如圖1A與圖1B所示，熱型感測元件10主要包含基材11、空腔12、第一絕緣層13、至少一第一感測電阻14、至少一第二感測電阻15、複數個電連接線17與複數個穿孔18。1A is a plan view schematically showing a first embodiment of a heat sensitive sensing element, and FIG. 1B is a cross-sectional view taken along line A-A of FIG. 1A. As shown in FIG. 1A and FIG. 1B , the thermal sensing element 10 mainly includes a substrate 11 , a cavity 12 , a first insulating layer 13 , at least one first sensing resistor 14 , at least one second sensing resistor 15 , and a plurality One electrical connection line 17 and a plurality of perforations 18.
第一絕緣層13設置於基材11上，第一感測電阻14與第二感測電阻15設置於第一絕緣層13的平面上，第一感測電阻14與第二感測電阻15皆為具正電阻溫度係數的感測電阻，第一感測電阻14與第二感測電阻15為分離設置。另外，設置電連接線17於第一感測電阻14與第二感測電阻15的周圍，每條電連接線17電連第一感測電阻14或第二感測電阻15，且透過所述電連接線17將第一感測電阻14以及第二感測電阻15與外部電路電性連接。因為第一感測電阻14與第二感測電阻15皆為具正電阻溫度係數的感測電阻，第一感測電阻14與第二感測電阻15所使用材料可為相同，且電連接線17的材料和第一感測電阻14與第二感測電阻15的材料可為相同。在本創作的不同實施例中，如圖1C所示，更可以在第一絕緣層13、第一感測電阻14、第二感測電阻15與電連接線17上設置第二絕緣層19，使第二絕緣層19覆蓋第一絕緣層13、第一感測電阻14、第二感測電阻15與電連接線17。另外，在不同實施例中，熱型感測元件10更含一第三絕緣層16，此第三絕緣層16覆蓋第一感測電阻14與一部分的第一絕緣層13，而第二感測電阻15設置於第三絕緣層16上，防止第一感測電阻14與第二感測電阻15做電性接觸，如圖1D所示。穿孔18設置於電連接線17的兩側，且空腔12形成於第一感測電阻14與第二感測電阻15下方的基材11上。透過上述的結構，部分的第一絕緣層13、第一感測電阻14、第二感測電阻15與部分的第二絕緣層19形成一懸浮結構18，減少第一感測電阻14與第二感測電阻15傳導熱至基材11的熱傳導途徑。The first sensing layer 14 is disposed on the substrate 11 , and the first sensing resistor 14 and the second sensing resistor 15 are disposed on the plane of the first insulating layer 13 , and the first sensing resistor 14 and the second sensing resistor 15 are both For the sense resistor having a positive temperature coefficient of resistance, the first sense resistor 14 and the second sense resistor 15 are disposed separately. In addition, an electrical connection line 17 is disposed around the first sensing resistor 14 and the second sensing resistor 15 , and each of the electrical connection lines 17 electrically connects the first sensing resistor 14 or the second sensing resistor 15 and transmits the The electrical connection line 17 electrically connects the first sensing resistor 14 and the second sensing resistor 15 to an external circuit. Because the first sensing resistor 14 and the second sensing resistor 15 are sensing resistors having a positive temperature coefficient of resistance, the materials used by the first sensing resistor 14 and the second sensing resistor 15 can be the same, and the electrical connection lines are The material of 17 and the materials of the first sensing resistor 14 and the second sensing resistor 15 may be the same. In a different embodiment of the present invention, as shown in FIG. 1C, a second insulating layer 19 may be disposed on the first insulating layer 13, the first sensing resistor 14, the second sensing resistor 15, and the electrical connection line 17, The second insulating layer 19 is covered with the first insulating layer 13, the first sensing resistor 14, the second sensing resistor 15, and the electrical connection line 17. In addition, in different embodiments, the thermal sensing element 10 further includes a third insulating layer 16 covering the first sensing resistor 14 and a portion of the first insulating layer 13 while the second sensing layer The resistor 15 is disposed on the third insulating layer 16 to prevent the first sensing resistor 14 from making electrical contact with the second sensing resistor 15, as shown in FIG. 1D. The through holes 18 are disposed on both sides of the electrical connection line 17 , and the cavity 12 is formed on the substrate 11 below the first sensing resistor 14 and the second sensing resistor 15 . Through the above structure, a portion of the first insulating layer 13, the first sensing resistor 14, the second sensing resistor 15 and a portion of the second insulating layer 19 form a floating structure 18, reducing the first sensing resistor 14 and the second The sense resistor 15 conducts heat to the heat transfer path of the substrate 11.
本創作的第一感測電阻14、第二感測電阻15與電連接線17的形成方式是在第一絕緣層13上沉積形成一材料層，再蝕刻材料層以分別形成第一感測電阻14、第二感測電阻15與電連接線17。另外，進一步蝕刻第一絕緣層13形成穿孔18，並於從穿孔18的位置蝕刻基材11以形成空腔12。透過上述的製程方式完成形成第一感測電阻14與第二感測電阻15於基材11上的製作。另外，在此實施例中，第一感測電阻14與第二感測電阻15的形狀為連續彎曲的線條狀，但在不同實施例中，第一感測電阻14與第二感測電阻15可以為不同的形狀如平面狀等，在此並不侷限。The first sensing resistor 14, the second sensing resistor 15 and the electrical connection line 17 of the present invention are formed by depositing a material layer on the first insulating layer 13, and etching the material layer to form a first sensing resistor, respectively. 14. The second sensing resistor 15 and the electrical connection line 17. In addition, the first insulating layer 13 is further etched to form the through holes 18, and the substrate 11 is etched from the position of the through holes 18 to form the cavity 12. The fabrication of the first sensing resistor 14 and the second sensing resistor 15 on the substrate 11 is completed by the above-described process. In addition, in this embodiment, the shapes of the first sensing resistor 14 and the second sensing resistor 15 are continuous curved lines, but in different embodiments, the first sensing resistor 14 and the second sensing resistor 15 It can be a different shape such as a flat shape, etc., and is not limited herein.
圖2A為本創作第二實施例之熱型感測元件的平面示意圖，圖2B為圖2A的B-B剖面圖。如圖2A與圖2B所示，熱型感測元件20主要包含基材21、空腔22、第一絕緣層23、至少一第一感測電阻24、至少一第二感測電阻25、複數個電連接線27與複數個穿孔28。2A is a plan view schematically showing a thermal sensing element of a second embodiment of the present invention, and FIG. 2B is a cross-sectional view taken along line B-B of FIG. 2A. As shown in FIG. 2A and FIG. 2B , the thermal sensing element 20 mainly includes a substrate 21 , a cavity 22 , a first insulating layer 23 , at least one first sensing resistor 24 , at least one second sensing resistor 25 , and a plurality One electrical connection line 27 and a plurality of perforations 28.
第一絕緣層23設置於基材21上，第一感測電阻24與第二感測電阻25皆為具有負電阻溫度係數的感測電阻，第一感測電阻24與第二感測電阻25設置於第一絕緣層23的平面上，第一感測電阻24與第二感測電阻25為分離設置，而其餘元件(如電連接線27、穿孔28與空腔22等)的設置方式與設置位置皆與第一實施例相同，在此不再贅述。在本創作的不同實施例中，如圖2C所示，同樣可以在第一絕緣層23、第一感測電阻24、第二感測電阻25與電連接線27上設置第二絕緣層29，使第二絕緣層29覆蓋第一絕緣層23、第一感測電阻24、第二感測電阻25與電連接線27。同樣藉由在第一感測電阻24與第二感測電阻25的下方包含一空腔22，以降低第一感測電阻24與第二感測電阻25熱傳導至基材21的途徑。另外，在此實施例中，第一感測電阻24與第二感測電阻25的形狀為平面狀，但在不同實施例中，第一感測電阻24與第二感測電阻25可以為不同的形狀如彎曲狀等，在此並不侷限。The first sensing layer 23 and the second sensing resistor 25 are sensing resistors having a negative temperature coefficient of resistance, and the first sensing resistor 24 and the second sensing resistor 25 are respectively disposed on the substrate 21 . The first sensing resistor 24 and the second sensing resistor 25 are disposed separately from each other, and the remaining components (such as the electrical connecting line 27, the through hole 28 and the cavity 22, etc.) are disposed. The setting positions are the same as those in the first embodiment, and details are not described herein again. In a different embodiment of the present invention, as shown in FIG. 2C, a second insulating layer 29 may be disposed on the first insulating layer 23, the first sensing resistor 24, the second sensing resistor 25, and the electrical connection line 27, The second insulating layer 29 is covered with the first insulating layer 23, the first sensing resistor 24, the second sensing resistor 25, and the electrical connection line 27. Also, a cavity 22 is included under the first sensing resistor 24 and the second sensing resistor 25 to reduce the heat conduction of the first sensing resistor 24 and the second sensing resistor 25 to the substrate 21. In addition, in this embodiment, the shapes of the first sensing resistor 24 and the second sensing resistor 25 are planar, but in different embodiments, the first sensing resistor 24 and the second sensing resistor 25 may be different. The shape is curved, etc., and is not limited here.
圖3A為應用圖1A與圖1B之第一實施例的熱型感應元件的量測電路圖。如圖3A所示，此量測電路30較佳為一惠斯登電橋，且包含一第一電阻31、一第二電阻32、一第三電阻33與一第四電阻34。將圖1A與圖1B之具有正電阻溫度係數的第一感測電阻14與第二感測電阻15應用於量測電路30的第二電阻32與第三電阻33。其中，該第一電阻31與第二電阻32(第一感測電阻14)串接於一操作電壓Vb與接地點之間，該第三電阻33(第二感測電阻15)與第四電阻34串接於該操作電壓Vb與接地點之間而與串接的第一電阻31與第二電阻32形成並聯。以惠斯登電橋為量測電路30的量測公式如下：Fig. 3A is a measurement circuit diagram of a heat type sensing element to which the first embodiment of Figs. 1A and 1B is applied. As shown in FIG. 3A, the measuring circuit 30 is preferably a Wheatstone bridge and includes a first resistor 31, a second resistor 32, a third resistor 33 and a fourth resistor 34. The first sensing resistor 14 and the second sensing resistor 15 having the positive temperature coefficient of resistance of FIGS. 1A and 1B are applied to the second resistor 32 and the third resistor 33 of the measuring circuit 30. The first resistor 31 and the second resistor 32 (the first sensing resistor 14) are serially connected between an operating voltage Vb and a ground point, and the third resistor 33 (the second sensing resistor 15) and the fourth resistor are connected. 34 is connected in series between the operating voltage Vb and the ground point to form a parallel connection with the first resistor 31 and the second resistor 32 connected in series. The measurement formula of the measuring circuit 30 using the Wheatstone bridge is as follows:
，， , ,
第一電阻31、第二電阻32、第三電阻33與第四電阻34的電阻值分別為R1 、R2 (T)、R3 (T)與R4 。Vs為量測電路整體的訊號變化量，V12為第一電阻31與第二電阻32之間的節點電壓，V34為第三電阻33與第四電阻34之間的節點電壓。因為第二電阻32與第三電阻33皆包含正電阻溫度係數，當壓力增加時，第二電阻32與第三電阻33的電阻值會隨溫度下降而變小，第三電阻33與第四電阻34之間的節點電壓V34的電壓值會增加，而第一電阻31與第二電阻32之間的節點電壓V12會減少，因此量測電路整體的訊號變化量Vs會大幅增加。另一方面來說第二電阻32與第三電阻33皆製作在同一隔熱良好的懸浮結構上，當操作在相同的操作電壓Vb下，若第二電阻32與第三電阻33同時被加熱，感測元件的溫度亦會明顯增加而提升訊號變化量，因此整體的訊號變化量Vs比習知具有單一感測元件的量測電路的訊號變化量大幅增加。另外，當第二電阻32與第三電阻33為包含負電阻溫度係數的第一感測電阻14與第二感測電阻15時，訊號變化量為負值，同樣具有量測電路的訊號變化量大幅增加的效果。The resistance values of the first resistor 31, the second resistor 32, the third resistor 33, and the fourth resistor 34 are R 1 , R 2 (T), R 3 (T), and R 4 , respectively . Vs is the signal change amount of the whole measuring circuit, V12 is the node voltage between the first resistor 31 and the second resistor 32, and V34 is the node voltage between the third resistor 33 and the fourth resistor 34. Because the second resistor 32 and the third resistor 33 both contain a positive temperature coefficient of resistance, when the pressure increases, the resistance values of the second resistor 32 and the third resistor 33 become smaller as the temperature decreases, and the third resistor 33 and the fourth resistor The voltage value of the node voltage V34 between 34 is increased, and the node voltage V12 between the first resistor 31 and the second resistor 32 is decreased, so that the signal variation amount Vs of the entire measuring circuit is greatly increased. On the other hand, the second resistor 32 and the third resistor 33 are both formed on the same well-insulated suspension structure. When the second resistor 32 and the third resistor 33 are simultaneously heated when operating at the same operating voltage Vb, The temperature of the sensing element is also significantly increased to increase the amount of signal change, so that the overall signal variation Vs is greatly increased compared to the signal variation of the measuring circuit having a single sensing element. In addition, when the second resistor 32 and the third resistor 33 are the first sense resistor 14 and the second sense resistor 15 including the negative temperature coefficient of resistance, the signal change amount is a negative value, and the signal change amount of the measurement circuit is also obtained. A substantial increase in the effect.
於第二實施例中，請參考圖2A、2B與3B，具正電阻溫度係數的第一感測電阻24與第二感測電阻25分別視為量測電路30的一第一電阻31與一第四電阻34。其中該第一電阻31(第一感測電阻14)與第二電阻32串接於一操作電壓Vb與接地之間，該第三電阻33與第四電阻34(第二感測電阻15)串接於該操作電壓Vb與接地之間而與串接的第一電阻31與第二電阻32形成並聯。因為第一感測電阻24(第一電阻31)與第二感測電阻25(第四電阻34)皆具有正電阻溫度係數，當壓力增加時，第一電阻31與第四電阻34的電阻值R1 (T)與R4 (T)會隨溫度下降而變小，第三電阻33與第四電阻34之間的節點電壓V34的電壓值會增加，而第一電阻31與第二電阻32之間的節點電壓V12會減少，因此訊號變化量Vs同樣具有增加的效果，如圖3B所示。另外，當第二電阻32與第三電阻33為包含負電阻溫度係數的第一感測電阻14與第二感測電阻15時，同樣具有量測電路的訊號變化量大幅增加的效果。In the second embodiment, referring to FIGS. 2A, 2B and 3B, the first sensing resistor 24 and the second sensing resistor 25 having a positive temperature coefficient of resistance are respectively regarded as a first resistor 31 and a measuring circuit 30. The fourth resistor 34. The first resistor 31 (the first sensing resistor 14) and the second resistor 32 are connected in series between an operating voltage Vb and the ground, and the third resistor 33 and the fourth resistor 34 (the second sensing resistor 15) are serially connected. The first resistor 31 and the second resistor 32 connected in series between the operating voltage Vb and the ground are connected in parallel. Because the first sensing resistor 24 (the first resistor 31) and the second sensing resistor 25 (the fourth resistor 34) both have a positive temperature coefficient of resistance, when the pressure increases, the resistance values of the first resistor 31 and the fourth resistor 34 R 1 (T) and R 4 (T) become smaller as the temperature decreases, and the voltage value of the node voltage V34 between the third resistor 33 and the fourth resistor 34 increases, and the first resistor 31 and the second resistor 32 increase. The node voltage V12 between them is reduced, so the signal variation amount Vs also has an increased effect, as shown in Fig. 3B. In addition, when the second resistor 32 and the third resistor 33 are the first sense resistor 14 and the second sense resistor 15 including the negative temperature coefficient of resistance, the effect of the signal change amount of the measurement circuit is greatly increased.
圖4A為本創作第三實施例之熱型感測元件的平面圖，圖4B為圖4A的C-C剖面圖。如圖4A與圖4B所示，熱型感測元件40主要包含基材41、空腔42、第一絕緣層43、至少一第一感測電阻44、至少一第二感測電阻45、複數個電連接線47與複數個穿孔48。4A is a plan view of the thermal sensing element of the third embodiment of the present invention, and FIG. 4B is a cross-sectional view taken along line C-C of FIG. 4A. As shown in FIG. 4A and FIG. 4B , the thermal sensing element 40 mainly includes a substrate 41 , a cavity 42 , a first insulating layer 43 , at least one first sensing resistor 44 , at least one second sensing resistor 45 , and a plurality One electrical connection line 47 and a plurality of perforations 48.
第一絕緣層43設置於基材41的平面上，第一感測電阻44與第二感測電阻45設置於第一絕緣層43的平面上，第一感測電阻44與第二感測電阻45為分離設置。第一感測電阻44與第二感測電阻45分別為具有正電阻溫度係數與負電阻溫度係數的感測電阻，然而，在不同實施例中，第一感測電阻44與第二感測電阻45可分別為具有負電阻溫度係數與正電阻溫度係數的感測電阻，在此並不侷限。電連接線47設置於第一絕緣層43的周圍以及第二感測電阻45上。在不同實施例中，更包含第二絕緣層49，第二絕緣層49覆蓋在第一絕緣層43、第一感測電阻44、第二感測電阻45與電連接線47上方，如圖4C所示。其餘元件(如穿孔48與空腔42等)的設置方式與設置位置皆與第一實施例和第二實施例相同，在此不再贅述。藉由在第一感測電阻44與第二感測電阻45的下方包含一空腔42，以降低第一感測電阻44與第二感測電阻45熱傳導至基材41途徑。The first insulating layer 43 is disposed on the plane of the substrate 41. The first sensing resistor 44 and the second sensing resistor 45 are disposed on the plane of the first insulating layer 43. The first sensing resistor 44 and the second sensing resistor are disposed. 45 is a separate setting. The first sensing resistor 44 and the second sensing resistor 45 are respectively sensing resistors having a positive temperature coefficient of resistance and a temperature coefficient of negative resistance. However, in different embodiments, the first sensing resistor 44 and the second sensing resistor 45 can be a sensing resistor having a negative temperature coefficient of resistance and a temperature coefficient of positive resistance, respectively, which is not limited herein. The electrical connection line 47 is disposed around the first insulating layer 43 and on the second sensing resistor 45. In a different embodiment, the second insulating layer 49 is further disposed on the first insulating layer 43, the first sensing resistor 44, the second sensing resistor 45 and the electrical connection line 47, as shown in FIG. 4C. Shown. The arrangement and setting positions of the remaining components (such as the through holes 48 and the cavity 42 and the like) are the same as those of the first embodiment and the second embodiment, and are not described herein again. A cavity 42 is included under the first sensing resistor 44 and the second sensing resistor 45 to reduce heat conduction between the first sensing resistor 44 and the second sensing resistor 45 to the substrate 41.
圖5A-圖5D為應用圖4A與圖4B之第三實施例的熱型感應元件的量測電路圖。如圖5A所示，此量測電路50同樣為一惠斯登電橋，其包含一第一電阻51、一第二電阻52、一第三電阻53與一第四電阻54，該第一電阻51與第二電阻52串接於一操作電壓Vb與接地點之間，該第三電阻53與第四電阻54串接於該操作電壓Vb與接地點之間而與串接的第一電阻51與第二電阻52形成並聯。5A-5D are measurement circuit diagrams of a thermal induction element to which the third embodiment of Figs. 4A and 4B is applied. As shown in FIG. 5A, the measuring circuit 50 is also a Wheatstone bridge, which includes a first resistor 51, a second resistor 52, a third resistor 53, and a fourth resistor 54, the first resistor. 51 and the second resistor 52 are connected in series between an operating voltage Vb and a grounding point. The third resistor 53 and the fourth resistor 54 are connected in series between the operating voltage Vb and the grounding point and are connected in series with the first resistor 51. It is formed in parallel with the second resistor 52.
本創作圖4A與圖4B的熱型感測元件的第一感測電阻44與第二感測電阻45分別作為該第三電阻53與第四電阻54。以惠斯登電橋為量測電路50的量測公式如下：The first sensing resistor 44 and the second sensing resistor 45 of the thermal sensing element of FIGS. 4A and 4B are respectively used as the third resistor 53 and the fourth resistor 54. The measurement formula of the measuring circuit 50 using the Wheatstone bridge is as follows:
，， , ,
其中，第一電阻51、第二電阻52、第三電阻53與第四電阻54的電阻值分別為R1 、R2 、R3 (T)與R4 (T)，第三電阻53與第四電阻54分別為正電阻溫度係數與負電阻溫度係數，當壓力增加時，第三電阻53的電阻值會隨溫度下降而變小，第四電阻54的電阻值隨溫度下降而變大，第三電阻53與第四電阻54之間的節點電壓V34的電壓值會增加，因此量測電路整體的訊號變化量Vs會增加。The resistance values of the first resistor 51, the second resistor 52, the third resistor 53, and the fourth resistor 54 are R 1 , R 2 , R 3 (T), and R 4 (T), respectively, and the third resistor 53 and The four resistors 54 are a positive resistance temperature coefficient and a negative resistance temperature coefficient respectively. When the pressure is increased, the resistance value of the third resistor 53 becomes smaller as the temperature decreases, and the resistance value of the fourth resistor 54 becomes larger as the temperature decreases. The voltage value of the node voltage V34 between the three resistors 53 and the fourth resistor 54 increases, so that the signal variation amount Vs of the entire measuring circuit increases.
另外，在不同實施例中，不同量測電路50的電路結構也可達到使量測電路50整體的訊號變化量Vs增加的目的，分別如圖5B~5D所示。請參考圖5B，本創作圖4A與圖4B的熱型感測元件的第一感測電阻44與第二感測電阻45分別視為該第一電阻51與第二電阻52，第一電阻51與第二電阻52分別具有負電阻溫度係數與正電阻溫度係數；請參考圖5C，本創作圖4A與圖4B的熱型感測元件的第一感測電阻44與第二感測電阻45分別視為該第一電阻51與第三電阻53，第一電阻51與第三電阻53分別具有負電阻溫度係數與正電阻溫度係數；請參考圖5D，本創作圖4A與圖4B的熱型感測元件的第一感測電阻44與第二感測電阻45分別視為該第二電阻52與第四電阻54，第二電阻52與第四電阻54分別具有正電阻溫度係數與負電阻溫度係數。In addition, in different embodiments, the circuit structure of the different measurement circuit 50 can also achieve the purpose of increasing the signal variation Vs of the measurement circuit 50 as shown in FIGS. 5B to 5D, respectively. Referring to FIG. 5B, the first sensing resistor 44 and the second sensing resistor 45 of the thermal sensing element of FIG. 4A and FIG. 4B are respectively regarded as the first resistor 51 and the second resistor 52, and the first resistor 51 is used. And the second resistor 52 respectively has a negative temperature coefficient of resistance and a positive temperature coefficient of resistance; please refer to FIG. 5C , the first sensing resistor 44 and the second sensing resistor 45 of the thermal sensing element of FIG. 4A and FIG. 4B respectively As the first resistor 51 and the third resistor 53, the first resistor 51 and the third resistor 53 respectively have a negative temperature coefficient of resistance and a positive temperature coefficient of resistance; please refer to FIG. 5D, and the thermal feeling of FIG. 4A and FIG. 4B is created. The first sensing resistor 44 and the second sensing resistor 45 of the measuring component are respectively regarded as the second resistor 52 and the fourth resistor 54, and the second resistor 52 and the fourth resistor 54 respectively have a positive temperature coefficient of resistance and a temperature coefficient of negative resistance. .
圖6A為本創作第四實施例之熱型感測元件的平面圖，圖6B為圖6A的D-D剖面圖。如圖6A與圖6B所示，熱型感測元件60主要包含基材61、空腔62、第一絕緣層63、兩個第一感測電阻64、一第二感測電阻65、複數個電連接線67與複數個穿孔68。6A is a plan view of the thermal sensing element of the fourth embodiment of the present invention, and FIG. 6B is a cross-sectional view taken along line D-D of FIG. 6A. As shown in FIG. 6A and FIG. 6B, the thermal sensing element 60 mainly includes a substrate 61, a cavity 62, a first insulating layer 63, two first sensing resistors 64, a second sensing resistor 65, and a plurality of Electrical connection line 67 and a plurality of perforations 68.
第一絕緣層63設置於基材61的平面上，第一感測電阻64與第二感測電阻65分別為具正電阻溫度係數與負電阻溫度係數的感測電阻，然而，在不同實施例中，第一感測電阻64與第二感測電阻65可以分別為具有負電阻溫度係數與正電阻溫度係數，在此並不侷限。第一感測電阻64與第二感測電阻65設置於第一絕緣層63的平面上，第一感測電阻64與第二感測電阻65為分離設置，第二感測電阻65位於第一感測電阻64之間。電連接線67設置於第一絕緣層63的表面周圍以及第二感測電阻65上。在不同實施例中，同樣可包含一第二絕緣層69，第二絕緣層69覆蓋在第一絕緣層63、第一感測電阻64、第二感測電阻65與電連接線67上方。其餘元件(如穿孔68與空腔62等)的設置方式與設置位置皆與上述之實施例相同，在此不再贅述。藉由在第一感測電阻64與第二感測電阻65的下方包含一空腔62，以降低第一感測電阻64與第二感測電阻65熱傳導至基材61的途徑。The first insulating layer 63 is disposed on the plane of the substrate 61, and the first sensing resistor 64 and the second sensing resistor 65 are sensing resistors having a positive temperature coefficient of resistance and a negative temperature coefficient of resistance, respectively. However, in different embodiments The first sensing resistor 64 and the second sensing resistor 65 may have a negative temperature coefficient of resistance and a positive temperature coefficient of resistance, respectively, and are not limited herein. The first sensing resistor 64 and the second sensing resistor 65 are disposed on the plane of the first insulating layer 63, the first sensing resistor 64 and the second sensing resistor 65 are separately disposed, and the second sensing resistor 65 is located at the first Between the sense resistors 64. The electrical connection line 67 is disposed around the surface of the first insulating layer 63 and on the second sensing resistor 65. In a different embodiment, a second insulating layer 69 may also be included. The second insulating layer 69 covers the first insulating layer 63, the first sensing resistor 64, the second sensing resistor 65 and the electrical connection line 67. The arrangement and setting positions of the remaining components (such as the perforations 68 and the cavities 62) are the same as those of the above embodiments, and are not described herein again. A cavity 62 is included under the first sensing resistor 64 and the second sensing resistor 65 to reduce the heat conduction of the first sensing resistor 64 and the second sensing resistor 65 to the substrate 61.
圖7A為本創作第五實施例之熱型感測元件的平面圖，圖7B為圖7A的E-E剖面圖。如圖7A與圖7B所示，熱型感測元件70主要包含基材71、空腔72、第一絕緣層73、一個第一感測電阻74、兩個第二感測電阻75、複數個電連接線77與複數個穿孔78。7A is a plan view of the thermal sensing element of the fifth embodiment of the present invention, and FIG. 7B is a cross-sectional view taken along line E-E of FIG. 7A. As shown in FIG. 7A and FIG. 7B, the thermal sensing element 70 mainly comprises a substrate 71, a cavity 72, a first insulating layer 73, a first sensing resistor 74, two second sensing resistors 75, and a plurality of Electrical connection line 77 and a plurality of perforations 78.
第一絕緣層73設置於基材71的平面上，第一感測電阻74與第二感測電阻75設置於第一絕緣層73的平面上，第一感測電阻74與第二感測電阻75為分離設置。第一感測電阻74與第二感測電阻75分別具正電阻溫度係數與負電阻溫度係數，然而，在不同實施例中，第一感測電阻74與第二感測電阻75可以分別具有正電阻溫度係數與負電阻溫度係數，在此並不侷限。電連接線77設置於第一絕緣層73的周圍以及第二感測電阻75上。在不同實施例中，更包含第二絕緣層79，第二絕緣層79覆蓋在第一絕緣層73、第一感測電阻74、第二感測電阻75與電連接線77上方。其餘元件(如穿孔78與空腔72等)的設置方式與設置位置皆與上述之實施例相同，在此不再贅述。藉由在第一感測電阻74與第二感測電阻75的下方包含一空腔72，以降低第一感測電阻74與第二感測電阻75熱傳導至基材71的途徑。The first insulating layer 73 is disposed on the plane of the substrate 71, and the first sensing resistor 74 and the second sensing resistor 75 are disposed on the plane of the first insulating layer 73, and the first sensing resistor 74 and the second sensing resistor are disposed. 75 is a separate setting. The first sensing resistor 74 and the second sensing resistor 75 have a positive temperature coefficient of resistance and a negative temperature coefficient of resistance, respectively. However, in different embodiments, the first sensing resistor 74 and the second sensing resistor 75 may have positive The temperature coefficient of resistance and the temperature coefficient of negative resistance are not limited here. The electrical connection line 77 is disposed around the first insulating layer 73 and on the second sensing resistor 75. In a different embodiment, a second insulating layer 79 is further included, and the second insulating layer 79 covers the first insulating layer 73, the first sensing resistor 74, the second sensing resistor 75 and the electrical connection line 77. The arrangement and setting positions of the remaining components (such as the through holes 78 and the cavity 72, etc.) are the same as those of the above embodiments, and will not be described herein. The method of thermally conducting the first sensing resistor 74 and the second sensing resistor 75 to the substrate 71 is reduced by including a cavity 72 under the first sensing resistor 74 and the second sensing resistor 75.
圖8A-圖8D為應用圖6A或圖7A之的熱型感應元件的量測電路圖。如圖8A所示，此量測電路80同樣為一惠斯登電橋，其包含一第一電阻81、一第二電阻82、一第三電阻83與一第四電阻84，其中相鄰的第二電阻82、第三電阻83與第四電阻84為應用本創作圖7A與圖7B中熱型感測元件的兩個第一感測電阻74與第二感測電阻75。將圖7A與圖7B之熱型感測元件的兩個第一感測電阻74分別取代惠斯登電橋上的第二電阻82與第三電阻83，而將第二感測電阻75取代第四電阻84。該第一電阻81與第二電阻82串接於操作電壓Vb與接地點之間，該第三電阻83與第四電阻84串接於該操作電壓Vb與接地點之間而與串接的第一電阻81與第二電阻82形成並聯。以惠斯登電橋為量測電路80的量測公式如下：8A-8D are measurement circuit diagrams of the thermal induction element to which the FIG. 6A or FIG. 7A is applied. As shown in FIG. 8A, the measuring circuit 80 is also a Wheatstone bridge, which includes a first resistor 81, a second resistor 82, a third resistor 83 and a fourth resistor 84, wherein adjacent The second resistor 82, the third resistor 83 and the fourth resistor 84 are the two first sensing resistors 74 and the second sensing resistor 75 of the thermal sensing element of FIG. 7A and FIG. 7B. The two first sensing resistors 74 of the thermal sensing element of FIGS. 7A and 7B respectively replace the second resistor 82 and the third resistor 83 on the Wheatstone bridge, and the second sensing resistor 75 replaces the fourth. Resistor 84. The first resistor 81 and the second resistor 82 are connected in series between the operating voltage Vb and the grounding point, and the third resistor 83 and the fourth resistor 84 are connected in series between the operating voltage Vb and the grounding point and are connected in series. A resistor 81 is formed in parallel with the second resistor 82. The measurement formula of the measuring circuit 80 using the Wheatstone bridge is as follows:
，， , ,
其中，第一電阻81、第二電阻82、第三電阻83與第四電阻84的電阻值分別為R1 、R2 (T)、R3 (T)與R4 (T)，第二電阻82與第三電阻83為正電阻溫度係數，第四電阻84為負電阻溫度係數，當壓力增加時，第二電阻82與第三電阻83的電阻值會隨溫度下降而變小，第四電阻84的電阻值隨溫度下降而變大，第一電阻81與第二電阻82之間的電壓差V12會減少，而第三電阻83與第四電阻84之間的電壓差V34的電壓值會增加，因此量測電路整體的訊號變化量Vs會增加。另外，在不同實施例中，如圖8B所示，第一電阻81與第三電阻83具有負電阻溫度係數，第二電阻82具有正電阻溫度係數，如圖8C所示，第一電阻81與第四電阻84具有負電阻溫度係數，第三電阻83具有正電阻溫度係數，或如圖8D所示，第一電阻81具有負電阻溫度係數，第二電阻82與第三電阻83具有正電阻溫度係數，訊號變化量Vs同樣較習知的訊號變化量大。The resistance values of the first resistor 81, the second resistor 82, the third resistor 83, and the fourth resistor 84 are R 1 , R 2 (T), R 3 (T), and R 4 (T), respectively. 82 and the third resistor 83 are positive temperature coefficient of resistance, and the fourth resistor 84 is a negative resistance temperature coefficient. When the pressure is increased, the resistance values of the second resistor 82 and the third resistor 83 become smaller as the temperature decreases, and the fourth resistor The resistance value of 84 becomes larger as the temperature decreases, the voltage difference V12 between the first resistor 81 and the second resistor 82 decreases, and the voltage value of the voltage difference V34 between the third resistor 83 and the fourth resistor 84 increases. Therefore, the signal variation Vs of the measurement circuit as a whole increases. In addition, in different embodiments, as shown in FIG. 8B, the first resistor 81 and the third resistor 83 have a negative temperature coefficient of resistance, and the second resistor 82 has a positive temperature coefficient of resistance, as shown in FIG. 8C, the first resistor 81 and The fourth resistor 84 has a negative resistance temperature coefficient, and the third resistor 83 has a positive resistance temperature coefficient, or as shown in FIG. 8D, the first resistor 81 has a negative resistance temperature coefficient, and the second resistor 82 and the third resistor 83 have a positive resistance temperature. The coefficient, the signal change amount Vs is also larger than the conventional signal change amount.
圖9A為本創作第六實施例之熱型感測元件的平面圖，圖9B為圖9A的F-F剖面圖。如圖9A與圖9B所示，熱型感測元件90主要包含基材91、空腔92、第一絕緣層93、至少一第一感測電阻94、至少一第二感測電阻95、複數個電連接線97與複數個穿孔98。Fig. 9A is a plan view of the thermal sensing element of the sixth embodiment, and Fig. 9B is a cross-sectional view taken along line F-F of Fig. 9A. As shown in FIG. 9A and FIG. 9B , the thermal sensing element 90 mainly includes a substrate 91 , a cavity 92 , a first insulating layer 93 , at least one first sensing resistor 94 , at least one second sensing resistor 95 , and a plurality One electrical connection 97 and a plurality of perforations 98.
第一絕緣層93設置於基材91的平面上，第一感測電阻94與第二感測電阻95分別具有正電阻溫度係數與負電阻溫度係數的感測電阻，至少一第一感測電阻94與至少一第二感測電阻95設置於第一絕緣層93的平面上，至少一第一感測電阻94與至少一第二感測電阻95為分離設置。在此實施例中，至少一第一感測電阻94的數量為兩個，至少一第二感測電阻95的數量也為兩個，兩個第二感測電阻95設置於兩個第一感測電阻94之間。其餘元件(如電連接線97、穿孔98與空腔92等)的設置方式與設置位置皆與第四實施例相同，在此不再贅述。在不同實施例中，更包含一第二絕緣層99，使第二絕緣層99覆蓋第一絕緣層93、第一感測電阻94、第二感測電阻95與電連接線97，如圖9C所示。在第一感測電阻94與第二感測電阻95的下方包含一空腔92，以降低第一感測電阻94與第二感測電阻95熱傳導途徑。The first insulating layer 93 is disposed on the plane of the substrate 91, and the first sensing resistor 94 and the second sensing resistor 95 respectively have a sensing resistance of a positive temperature coefficient of resistance and a temperature coefficient of negative resistance, and at least one first sensing resistor The at least one first sensing resistor 94 is disposed on the plane of the first insulating layer 93, and the at least one first sensing resistor 94 is disposed separately from the at least one second sensing resistor 95. In this embodiment, the number of the at least one first sensing resistor 94 is two, the number of the at least one second sensing resistor 95 is also two, and the two second sensing resistors 95 are disposed on the two first senses. Between the resistances 94. The arrangement and setting positions of the remaining components (such as the electrical connection line 97, the through hole 98, the cavity 92, and the like) are the same as those in the fourth embodiment, and are not described herein again. In a different embodiment, a second insulating layer 99 is further included, so that the second insulating layer 99 covers the first insulating layer 93, the first sensing resistor 94, the second sensing resistor 95 and the electrical connection line 97, as shown in FIG. 9C. Shown. A cavity 92 is included under the first sensing resistor 94 and the second sensing resistor 95 to reduce the heat conduction path of the first sensing resistor 94 and the second sensing resistor 95.
圖10為應用圖9A與圖9B之第六實施例的熱型感應元件的量測電路圖。如圖10所示，此量測電路100同樣可為一惠斯登電橋，其包含一第一電阻101、一第二電阻102、一第三電阻103與一第四電阻104，其中以具有相同電阻溫度係數的感測電阻以對接方式設置，並以具有相反電阻溫度係數的感測電阻以鄰接方式設置。惠斯登電橋中的第一電阻101、第二電阻102、第三電阻103與第四電阻104為應用本創作圖9A與圖9B中熱型感測元件的兩個第一感測電阻94與兩個第二感測電阻95。將圖9A與圖9B之熱型感測元件的兩個第一感測電阻94分別取代惠斯登電橋上的第二電阻102與第三電阻103，而將兩個第二感測電阻95取代第一電阻101與第四電阻104。該第一電阻101與第二電阻102串接於一操作電壓Vb與接地點之間，該第三電阻103與第四電阻104串接於該操作電壓Vb與接地點之間而與串接的第一電阻101與第二電阻102形成並聯。以惠斯登電橋為量測電路100的量測公式如下：Fig. 10 is a circuit diagram showing the measurement of the thermal induction element of the sixth embodiment of Figs. 9A and 9B. As shown in FIG. 10, the measuring circuit 100 can also be a Wheatstone bridge, which includes a first resistor 101, a second resistor 102, a third resistor 103 and a fourth resistor 104, wherein The sense resistors of the same temperature coefficient of resistance are arranged in a butt manner and are disposed in a contiguous manner with sense resistors having opposite temperature coefficients of resistance. The first resistor 101, the second resistor 102, the third resistor 103 and the fourth resistor 104 in the Wheatstone bridge are two first sensing resistors 94 for applying the heat sensing element of FIGS. 9A and 9B. And two second sensing resistors 95. The two first sensing resistors 94 of the thermal sensing element of FIGS. 9A and 9B respectively replace the second resistor 102 and the third resistor 103 on the Wheatstone bridge, and the two second sensing resistors 95 are replaced. The first resistor 101 and the fourth resistor 104. The first resistor 101 and the second resistor 102 are connected in series between an operating voltage Vb and a ground point. The third resistor 103 and the fourth resistor 104 are connected in series between the operating voltage Vb and the ground point and are connected in series. The first resistor 101 and the second resistor 102 are formed in parallel. The measurement formula of the measuring circuit 100 using the Wheatstone bridge is as follows:
，， , ,
其中，第一電阻101、第二電阻102、第三電阻103與第四電阻104的電阻值分別為R1 (T)、R2 (T)、R3 (T)與R4 (T)，第一電阻101與第四電阻104為負電阻溫度係數，第二電阻102與第三電阻103為正電阻溫度係數，當壓力增加時，第二電阻102與第三電阻103的電阻值會隨溫度下降而變小，第一電阻101與第四電阻104的電阻值隨溫度下降而變大，第一電阻101與第二電阻102之間的節點電壓V12會減少，而第三電阻103與第四電阻104之間的節點電壓V34的電壓值會增加，因此量測電路整體的訊號變化量Vs會增加，在此實施例的訊號變化量Vs比習知的訊號變化量大。Wherein the first resistor 101, second resistor 102, third resistor 103 and the resistance value of the fourth resistor 104 are respectively R 1 (T), R 2 (T), R 3 (T) and R 4 (T), The first resistor 101 and the fourth resistor 104 are negative temperature coefficient of resistance, and the second resistor 102 and the third resistor 103 are positive temperature coefficient of resistance. When the pressure is increased, the resistance values of the second resistor 102 and the third resistor 103 are related to temperature. As the voltage decreases, the resistance values of the first resistor 101 and the fourth resistor 104 become larger as the temperature decreases, the node voltage V12 between the first resistor 101 and the second resistor 102 decreases, and the third resistor 103 and the fourth resistor 103 The voltage value of the node voltage V34 between the resistors 104 increases, so that the signal variation amount Vs of the entire measurement circuit increases, and the signal variation amount Vs in this embodiment is larger than the conventional signal variation amount.
圖11A為本創作之量測電路應用兩個、三個與四個感測電阻以及習知量測電路應用一個感測電阻的溫度與壓力變化的曲線圖。如圖11A所示，當壓力增加時，四個感測電阻之特性曲線111、三個感測電阻之特性曲線112或兩個感測電阻之特性曲線113的溫度相對於壓力的變化都較習知使用一個感測電阻之特性曲線114的溫度變化大。溫度變化大表示訊號變化量Vs也較大。如圖11B所示，四個感測電阻之特性曲線111、三個感測電阻之特性曲線112、兩個感測電阻之特性曲線113與習知使用一個感測電阻之特性曲線114顯示本創作使用四個感測電阻、三個感測電阻與兩個感測電阻所量測到的輸出電壓變化量均較習知使用一個感測電阻所量測的輸出電壓變化量大，因此可改善由於感測元件微小化過程中訊號亦隨之變小的問題。FIG. 11A is a graph showing temperature and pressure changes of a sensing resistor applied to two, three, and four sensing resistors and a conventional measuring circuit using the measuring circuit of the present invention. As shown in FIG. 11A, when the pressure is increased, the characteristic curves 111 of the four sensing resistors, the characteristic curve 112 of the three sensing resistors, or the characteristic curve 113 of the two sensing resistors are changed with respect to the pressure. It is known that the temperature change of the characteristic curve 114 using one sensing resistor is large. A large temperature change indicates that the signal change amount Vs is also large. As shown in FIG. 11B, the characteristic curve 111 of the four sensing resistors, the characteristic curve 112 of the three sensing resistors, the characteristic curve 113 of the two sensing resistors, and the characteristic curve 114 of a sensing resistor are conventionally used to display the creation. The amount of change in the output voltage measured using the four sense resistors, the three sense resistors, and the two sense resistors is larger than the amount of change in the output voltage measured by a conventional sense resistor, thus improving The signal is also reduced in the process of miniaturization of the sensing element.
透過在一熱型感測元件上增加感測電阻的數量，並配合惠斯登電橋之量測電路的電阻位置配置，可大幅提升感測訊號，因此可改善感測元件在微小化的過程中訊號亦隨之變小的問題。By increasing the number of sensing resistors on a thermal sensing element and matching the resistance position configuration of the measuring circuit of the Wheatstone bridge, the sensing signal can be greatly improved, thereby improving the miniaturization process of the sensing element. The Chinese signal has also become smaller.
10,20,40,60,70,90‧‧‧熱型感測元件
11,21,41,61,71,91‧‧‧基材
12,22,42,62,72,92‧‧‧空腔
13,23,43,63,73,93‧‧‧第一絕緣層
14,24,44,64,74,94‧‧‧第一感測電阻
15,25,45,65,75,95‧‧‧第二感測電阻
16‧‧‧第三絕緣層
17,27,47,67,77,97‧‧‧電連接線
18,28,48,68,78,98‧‧‧穿孔
19,29,49,69,79,99‧‧‧第二絕緣層
30,50,80,100‧‧‧量測電路
31,51,81,101‧‧‧第一電阻
32,52,82,102‧‧‧第二電阻
33,53,83,103‧‧‧第三電阻
34,54,84,104‧‧‧第四電阻
111‧‧‧四個感測電阻特性曲線
112‧‧‧三個感測電阻特性曲線
113‧‧‧兩個感測電阻特性曲線
114‧‧‧一個感測電阻特性曲線
120‧‧‧熱型感測元件
121‧‧‧基板
122‧‧‧絕緣層
123‧‧‧感測電阻
124‧‧‧空腔
125‧‧‧懸浮結構
126‧‧‧連接部
130‧‧‧惠斯登電橋
131‧‧‧第一電阻
132‧‧‧第二電阻
133‧‧‧第三電阻
134‧‧‧第四電阻
V12,V34‧‧‧節點電壓
Vs‧‧‧訊號變化量
Vb‧‧‧操作電壓10,20,40,60,70,90‧‧‧ Thermal sensing components
11,21,41,61,71,91‧‧‧Substrate
12,22,42,62,72,92‧‧‧cavity
13,23,43,63,73,93‧‧‧first insulation
14,24,44,64,74,94‧‧‧First sense resistor
15,25,45,65,75,95‧‧‧second sense resistor
16‧‧‧ Third insulation
17,27,47,67,77,97‧‧‧Electrical cable
18,28,48,68,78,98‧‧‧Perforation
19,29,49,69,79,99‧‧‧second insulation
30, 50, 80, 100‧‧‧Measurement circuit
31,51,81,101‧‧‧First resistance
32,52,82,102‧‧‧second resistance
33, 53, 83, 103‧‧‧ third resistor
34,54,84,104‧‧‧fourth resistor
111‧‧‧ Four sensing resistance characteristic curves
112‧‧‧Three sensing resistance characteristic curves
113‧‧‧Two sensing resistance characteristic curves
114‧‧‧A sense resistance characteristic curve
120‧‧‧Thermal sensing element
121‧‧‧Substrate
122‧‧‧Insulation
123‧‧‧Sensor resistance
124‧‧‧ Cavity
125‧‧‧suspension structure
126‧‧‧Connecting Department
130‧‧·Wheatstone Bridge
131‧‧‧First resistance
132‧‧‧second resistance
133‧‧‧ Third resistor
134‧‧‧fourth resistor
V12, V34‧‧‧ node voltage
Vs‧‧‧ signal change
Vb‧‧‧ operating voltage
圖1A為本創作第一實施例之熱型感測元件的平面示意圖。 圖1B為圖1A之熱型感測元件的A-A剖面示意圖。 圖1C與圖1D分別為不同於圖1B之實施例的熱型感測元件的剖面示意圖。 圖2A為本創作第二實施例之熱型感測元件的平面示意圖。 圖2B為圖2A之熱型感測元件的B-B剖面示意圖。 圖2C為不同於圖2B之實施例之熱型感測元件的剖面示意圖。 圖3A與圖3B為應用圖1A或圖1B之第一實施例的熱型感應元件的量測電路圖。 圖4A為本創作第三實施例之熱型感測元件的平面示意圖。 圖4B為圖4A之熱型感測元件的C-C剖面示意圖。 圖4C為不同於圖4B之實施例之熱型感測元件的剖面示意圖。 圖5A-圖5D為應用圖4A與圖4B之第三實施例的熱型感應元件的量測電路圖。 圖6A為本創作第四實施例之熱型感測元件的平面示意圖。 圖6B為圖6A之熱型感測元件的D-D剖面示意圖。 圖6C為不同於圖6B之實施例之熱型感測元件的剖面示意圖。 圖7A為本創作第五實施例之熱型感測元件的平面示意圖。 圖7B為圖7A之熱型感測元件的E-E剖面示意圖。 圖7C為不同於圖7B之實施例之熱型感測元件的剖面示意圖。 圖8A-圖8D為應用圖6A或圖7A之的熱型感應元件的量測電路圖。 圖9A為本創作第六實施例之熱型感測元件的平面示意圖。 圖9B為圖9A之熱型感測元件的F-F剖面示意圖。 圖9C為不同於圖9B之實施例之熱型感測元件的剖面示意圖。 圖10為應用圖9A與圖9B之第六實施例的熱型感應元件的量測電路圖。 圖11A為本創作之量測電路應用兩個、三個與四個感測元件以及習知的量測電路的感測元件溫度與壓力變化的曲線圖。 圖11B為本創作之應用兩個、三個與四個感測元件的量測電路以及習知的感測元件的量測電路的輸出電壓比較的曲線圖。 圖12為現有的熱型感應元件的立體示意圖。 圖13為現有的應用熱型感應元件之惠斯登電橋的電路圖。1A is a schematic plan view of the thermal sensing element of the first embodiment of the present invention. 1B is a cross-sectional view of the A-A of the thermal sensing element of FIG. 1A. 1C and 1D are schematic cross-sectional views of a thermal sensing element different from the embodiment of FIG. 1B, respectively. 2A is a schematic plan view of the thermal sensing element of the second embodiment of the present invention. 2B is a cross-sectional view of the B-B of the thermal sensing element of FIG. 2A. 2C is a schematic cross-sectional view of a thermal sensing element different from the embodiment of FIG. 2B. 3A and 3B are measurement circuit diagrams of a thermal induction element to which the first embodiment of Fig. 1A or Fig. 1B is applied. 4A is a schematic plan view of the thermal sensing element of the third embodiment of the present invention. 4B is a cross-sectional view of the C-C of the thermal sensing element of FIG. 4A. 4C is a cross-sectional view of a thermal sensing element different from the embodiment of FIG. 4B. 5A-5D are measurement circuit diagrams of a thermal induction element to which the third embodiment of Figs. 4A and 4B is applied. 6A is a schematic plan view of a thermal sensing element of a fourth embodiment of the present invention. 6B is a D-D cross-sectional view of the thermal sensing element of FIG. 6A. Figure 6C is a schematic cross-sectional view of a thermal sensing element different from the embodiment of Figure 6B. 7A is a plan view schematically showing a thermal sensing element of a fifth embodiment of the present invention. 7B is a cross-sectional view of the E-E of the thermal sensing element of FIG. 7A. Figure 7C is a schematic cross-sectional view of a thermal sensing element different from the embodiment of Figure 7B. 8A-8D are measurement circuit diagrams of the thermal induction element to which the FIG. 6A or FIG. 7A is applied. FIG. 9A is a schematic plan view of the thermal sensing element of the sixth embodiment of the present invention. 9B is a cross-sectional view of the F-F of the thermal sensing element of FIG. 9A. Figure 9C is a schematic cross-sectional view of a thermal sensing element different from the embodiment of Figure 9B. Fig. 10 is a circuit diagram showing the measurement of the thermal induction element of the sixth embodiment of Figs. 9A and 9B. FIG. 11A is a graph showing temperature and pressure changes of sensing elements of two, three, and four sensing elements and a conventional measuring circuit applied to the measuring circuit of the present invention. FIG. 11B is a graph comparing the output voltages of the measurement circuits of two, three, and four sensing elements and the measurement circuit of the conventional sensing elements. Fig. 12 is a perspective view showing a conventional heat type sensing element. Fig. 13 is a circuit diagram of a prior art Wheatstone bridge to which a thermal sensing element is applied.
10‧‧‧熱型感測元件 10‧‧‧Thermal sensing element
11‧‧‧基材 11‧‧‧Substrate
12‧‧‧空腔 12‧‧‧ cavity
13‧‧‧第一絕緣層 13‧‧‧First insulation
14‧‧‧第一感測電阻 14‧‧‧First sense resistor
15‧‧‧第二感測電阻 15‧‧‧Second sensing resistor
17‧‧‧電連接線 17‧‧‧Electrical cable
18‧‧‧穿孔 18‧‧‧Perforation
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104135000A TWI600899B (en) | 2015-10-23 | 2015-10-23 | Thermal sensing element |
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| TW104135000A TWI600899B (en) | 2015-10-23 | 2015-10-23 | Thermal sensing element |
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| TW201715228A TW201715228A (en) | 2017-05-01 |
| TWI600899B true TWI600899B (en) | 2017-10-01 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10703625B1 (en) | 2019-03-29 | 2020-07-07 | Industrial Technology Research Institute | Microelectromechanical system (MEMS) apparatus with adjustable spring |
| US10843919B2 (en) | 2018-12-28 | 2020-11-24 | Industrial Technology Research Institute | Microelectromechanical system apparatus with heater |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111721469A (en) * | 2020-06-17 | 2020-09-29 | 中国计量大学 | High-sensitivity miniature Pirani gauge |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7833800B2 (en) * | 2002-04-01 | 2010-11-16 | Palo Alto Research Center Incorporated | Thermal sensing with bridge circuitry |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7833800B2 (en) * | 2002-04-01 | 2010-11-16 | Palo Alto Research Center Incorporated | Thermal sensing with bridge circuitry |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10843919B2 (en) | 2018-12-28 | 2020-11-24 | Industrial Technology Research Institute | Microelectromechanical system apparatus with heater |
| US10703625B1 (en) | 2019-03-29 | 2020-07-07 | Industrial Technology Research Institute | Microelectromechanical system (MEMS) apparatus with adjustable spring |
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| Publication number | Publication date |
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| TW201715228A (en) | 2017-05-01 |
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