TWI600524B - A surface patterning method by imprint - Google Patents
A surface patterning method by imprint Download PDFInfo
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- TWI600524B TWI600524B TW100100466A TW100100466A TWI600524B TW I600524 B TWI600524 B TW I600524B TW 100100466 A TW100100466 A TW 100100466A TW 100100466 A TW100100466 A TW 100100466A TW I600524 B TWI600524 B TW I600524B
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- 238000000034 method Methods 0.000 title claims description 59
- 238000000059 patterning Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims description 55
- 238000001127 nanoimprint lithography Methods 0.000 claims description 21
- 238000001459 lithography Methods 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims 2
- 239000004038 photonic crystal Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000004049 embossing Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000000605 extraction Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000013079 quasicrystal Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 230000000844 anti-bacterial effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003592 biomimetic effect Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
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Description
本發明是有關於一種表面圖案的製作方法,特別是指一種以簡單結構之模具進行壓印形成複雜結構圖案,例如長程有序晶格結構(long range order structure)表面圖案、短程有序準晶格結構(short range order quasi-crystal structure)表面圖案,及類自然態結構(nature-like/biomimetic structure)表面圖案的方法。 The invention relates to a method for fabricating a surface pattern, in particular to a embossing with a simple structure to form a complex structure pattern, such as a long range order structure surface pattern, short-range ordered quasicrystal Short range order quasi-crystal structure surface pattern, and a method of surface pattern of nature-like/biomimetic structure.
表面圖案的應用範圍很廣,最顯著的例子是應用於太陽能電池、發光二極體等元件上以各式不同的表面圖案,例如光子晶體結構,或類光子晶體結構等,來提升光入射利用率,或光取出率。 Surface patterns are used in a wide range of applications. The most notable examples are applied to solar cells, light-emitting diodes and other components with various surface patterns, such as photonic crystal structures or photonic crystal structures, to enhance light incidence. Rate, or light extraction rate.
目前,於物體上形成表面圖案,例如於藍寶石基材上形成二氧化矽為材料所構成的表面圖案的方式大致有兩種:一是製作具有對應於所需形成表面圖案之圖案態樣的光罩,之後進行利用微影(photolithography)製程、蝕刻(etching)製程,而將光罩的圖案態樣轉移(transfer)形成在藍寶石基材上,而得到所需的表面圖案;另一種則是先製作具有對應該表面圖案之圖案態樣的模仁(mold),再進行奈米壓印微影(nanoimprint lithography)製程將模仁的圖案態樣轉印(transfer)在藍寶石基材上而得到所需的表面圖案。 At present, there are two ways to form a surface pattern on an object, for example, a surface pattern formed by forming cerium oxide on a sapphire substrate: one is to produce light having a pattern corresponding to a desired surface pattern to be formed. The hood is then subjected to a photolithography process and an etching process, and the pattern of the reticle is transferred onto the sapphire substrate to obtain a desired surface pattern; the other is A mold having a pattern corresponding to the surface pattern is prepared, and then a nanoimprint lithography process is performed to transfer the pattern of the mold to the sapphire substrate. The required surface pattern.
雖然上述的兩種方式都可以得到所需的表面圖案,但是,其共同的缺點在於光罩的圖案態樣或模仁的圖案態樣直接決定了轉移或轉印形成的表面圖案,也就是說,每一光罩或是模仁僅能轉移或壓印形成對應的單一種表面圖案態樣,而當所需要的表面圖案愈趨複雜時,其光罩或模仁的設計、製作也就越困難,製作成本也會大幅提高,特別是,當所欲製作出的表面圖案是具有高對稱性或接近自然形態的圖形,例如長程有序晶格結構表面圖案、短程有序準晶格結構表面圖案,及類自然態結構表面圖案時,其光罩或模仁的設計、製作難度,以及整體製作成本將會大幅地提升,甚至有些自然態的圖形,僅能以複雜且高成本的技術完成小尺寸的展示品,並無法達到實際商業化量產的目的。Although the above two methods can obtain the desired surface pattern, the common disadvantage is that the pattern of the reticle or the pattern of the mold directly determines the surface pattern formed by transfer or transfer, that is, Each mask or mold can only be transferred or stamped to form a corresponding single surface pattern, and when the required surface pattern becomes more complicated, the design and production of the mask or mold will be more Difficulties, production costs will also be greatly improved, especially, when the surface pattern to be produced is a pattern with high symmetry or close to natural morphology, such as long-range ordered lattice structure surface pattern, short-range ordered quasi-lattice structure surface Patterns, and the appearance of natural structural surface patterns, the design of the mask or mold, the difficulty of the production, as well as the overall production costs will be greatly improved, and even some natural patterns can only be completed with complex and costly technology. Small-size exhibits are not able to achieve the actual commercial mass production.
因此,本發明之目的,即在提供一種用結構簡單的模具進行壓印製程而可以簡單、低成本的製作出複雜態樣的表面圖案的方法。Accordingly, it is an object of the present invention to provide a method for producing a complicated surface pattern in a simple and low-cost manner by providing an imprint process using a mold having a simple structure.
於是,本發明以壓印方式形成表面圖案的方法包含一模仁建立步驟、一基礎圖案形成步驟,及一二次圖案形成步驟。Thus, the method of forming a surface pattern by imprinting of the present invention comprises a mold establishing step, a base pattern forming step, and a secondary pattern forming step.
該模仁建立步驟以微影製程於一個模具基板上形成間隔分布且自身圖形尺寸不超過微米尺度的多數個結構點,製得一個模仁。The mold establishing step is to form a mold core by forming a plurality of structural points on a mold substrate with a spacing distribution and a size of the self-pattern not exceeding the micrometer scale.
該基礎圖案形成步驟用該塊模仁進行奈米壓印微影製程,而於一塊基材上形成對應於所述的多數個結構點的第一圖案結構。The base pattern forming step performs a nanoimprint lithography process using the block mold to form a first pattern structure corresponding to the plurality of structural points on a substrate.
該二次圖案形成步驟於該塊形成有多數個結構點的第一圖案結構的基材上,依據一個選取的原點並相對該塊形成有第一圖案結構的基材轉動該模仁,然後用轉動後的該模仁進行奈米壓印微影製程,而於該塊形成有第一圖案結構的基材上再形成對應於所述的多數個結構點的第二圖案結構,所述的第一、二圖案結構即於該塊基材上構成衍生於該模仁的多數個結構點的表面圖案。The secondary pattern forming step is performed on the substrate of the first pattern structure in which the plurality of structure dots are formed on the block, and the mold core is rotated according to a selected origin and a substrate having the first pattern structure formed on the block, and then Performing a nanoimprint lithography process on the rotated mold core, and forming a second pattern structure corresponding to the plurality of structural points on the substrate on which the block is formed with the first pattern structure, The first and second pattern structures form a surface pattern on the block substrate that is derived from a plurality of structural points of the mold core.
同時,本發明以壓印方式形成表面圖案的方法,還可包含一再次圖案形成步驟。該再次圖案形成步驟在該塊形成有第一、二圖案結構的基材上,以相同的該原點和相同的轉動模式再轉動該塊模仁,並用再轉動的該塊模仁進行奈米壓印微影製程,而於該塊形成有第一、二圖案結構的基材上再形成對應於所述的多數個結構點的第三圖案結構,所述的第一、二、三圖案結構即於該塊基材上構成衍生於該塊模仁之多數個結構點的表面圖案。Meanwhile, the method of the present invention for forming a surface pattern by imprinting may further include a re-patterning step. The re-pattern forming step re-rotates the block mold core at the same origin and the same rotation mode on the substrate on which the first and second pattern structures are formed, and performs the nanometer with the re-rotating mold block. Embossing a lithography process, and forming a third pattern structure corresponding to the plurality of structural points on the substrate on which the first and second pattern structures are formed, the first, second, and third pattern structures That is, a surface pattern derived from a plurality of structural points of the mold core is formed on the block substrate.
此外,本發明以壓印方式形成表面圖案的方法,還可以實施一與上述實施方式不同的再次圖案形成步驟。該再次圖案形成步驟在形成有該第一、二圖案結構的基材上再決定一與該原點和模仁變化模式具有預定數學關係的一衍生原點和一衍生平面變化方式(即在該基材上找取一對應參考點(即該衍生原點),並以此參考點為原點進行模具與既有結構圖形間的平面座標變化,包括旋轉與位移),並以該衍生原點和該衍生平面變化方式再改變該模仁與形成有該等第一、二圖案結構的該基材的圖形相對位置,並用改變圖形相對位置後的該模仁進行奈米壓印微影製程於形成有該等第一、二圖案結構的該基材上,再形成與該等第一、二圖案結構屬同一平面對應於該些結構點的第三圖案結構,該等第一、二、三圖案結構即於該基材上構成衍生於模仁之多數結構點的表面圖案。Further, in the present invention, a method of forming a surface pattern by imprinting may be carried out, and a re-pattern forming step different from the above embodiment may be implemented. The re-patterning step further determines a derivative origin and a derivative plane change pattern having a predetermined mathematical relationship with the origin and the mold change pattern on the substrate on which the first and second pattern structures are formed (ie, Find a corresponding reference point on the substrate (ie, the derived origin), and use the reference point as the origin to perform plane coordinate changes between the mold and the existing structural pattern, including rotation and displacement, and use the derivative origin And changing the relative position of the mold core to the substrate on which the first and second pattern structures are formed, and performing the nanoimprint lithography process on the mold core after changing the relative position of the pattern Forming the first and second pattern structures on the substrate, and forming a third pattern structure corresponding to the first and second pattern structures corresponding to the structure points, the first, second, and third The pattern structure forms a surface pattern on the substrate that is derived from a plurality of structural points of the mold core.
本發明之功效在於:提供一種以構造簡單的模仁,配合原點的選定與模仁平面位置的變化,而可製作出態樣複雜的長程有序晶格結構表面圖案、短程有序準晶格結構表面圖案,及類自然態結構表面圖案的方法。The invention has the advantages of providing a simple structure of the mold core, matching with the origin and the change of the plane position of the mold, thereby producing a complex long-range ordered lattice structure surface pattern, short-range ordered quasicrystal A lattice structure surface pattern, and a method of patterning a surface pattern of a natural state structure.
有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之三個較佳實施例的詳細說明中,將可清楚的呈現。The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of FIG.
在本發明被詳細描述之前,要注意的是,在以下的說明內容中,類似的元件是以相同的編號來表示。Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals.
參閱圖1,本發明以壓印方式形成表面圖案的方法的一第一較佳實施例,包含模仁建立步驟11、基礎圖案形成步驟12,及二次圖案形成步驟13,而可於物體上形成表面圖案-例如於一基材上形成二氧化矽為材料所構成的表面圖案。Referring to FIG. 1, a first preferred embodiment of a method for forming a surface pattern by imprinting of the present invention includes a mold establishing step 11, a base pattern forming step 12, and a secondary pattern forming step 13 on an object. A surface pattern is formed, for example, a surface pattern formed by forming ceria as a material on a substrate.
配合參閱圖2,首先進行模仁建立步驟11,以微影製程於一塊模具基板21上形成間隔分布且自身圖形尺寸不超過微米尺度的多數個結構點22,製得一模仁2,其中,每至少三個結構點22構成一個幾何結構實質對稱的壓印圖樣單元23,在本例中,是以如圖2中假想線框所示之四個結構點22構成的矩形圖案為壓印圖樣單元23。Referring to FIG. 2, a mold-making step 11 is first performed to form a mold core 2 on a mold substrate 21 by a lithography process, and a plurality of structural points 22 having a size of not more than a micrometer are formed. Each of the at least three structural points 22 constitutes a embossed pattern unit 23 of substantially geometric geometry, in this example, a rectangular pattern of four structural points 22 as shown by the phantom line frame in FIG. 2 is an embossed pattern. Unit 23.
參閱圖1、圖3,接著進行基礎圖案形成步驟12,用該塊模仁2進行例如熱壓式奈米壓印微影製程(hot embossing nano-imprint lithography)、光照式奈米壓印微影製程(UV nano-imprint lithography),或接觸式奈米壓印微影製程(nano contact printing imprint)等奈米壓印微影製程於一塊基材3上形成多數個結構點的第一圖案結構31(白色圓點),詳細地說,此步驟是利用施加壓力的方式,將該模仁建立步驟11製作的模仁2壓在已旋佈好例如壓印光阻的基材3上,使模仁2的多數個結構點22圖案形成在光阻上,接下來利用例如O2 plasma、RIE蝕刻等製程將光阻圖案結構轉移至基材3上,而於基材3上形成衍生自該塊模仁2之多數個結構點22的多數個結構點的第一圖案結構31。由於熱壓式奈米壓印微影製程、光照式奈米壓印微影製程,以及接觸式奈米壓印微影製程等奈米壓印微影製程已為業界所週知,且並非本案發明重點所在,故在此不再詳述各奈米壓印微影製程之實施細節。Referring to FIG. 1 and FIG. 3, a basic pattern forming step 12 is performed, and the block embossing 2 is used to perform, for example, hot embossing nano-imprint lithography and illuminating nano embossing lithography. A nano-imprint lithography process, or a nano-imprint lithography process, such as a nano-imprint lithography process, to form a first pattern structure of a plurality of structural dots on a substrate 3. (White dot), in detail, this step is to press the mold core 2 produced in the mold establishing step 11 onto the substrate 3 which has been rotated, for example, imprinted with photoresist, by applying pressure. A plurality of structural dots 22 of the core 2 are patterned on the photoresist, and then the photoresist pattern structure is transferred to the substrate 3 by a process such as O 2 plasma, RIE etching, etc., and the substrate 3 is formed from the block. A first pattern structure 31 of a plurality of structural points of a plurality of structural points 22 of the mold core 2. Nano-imprint lithography processes such as hot-pressed nanoimprint lithography process, illumination-type nanoimprint lithography process, and contact-type nanoimprint lithography process are well known in the industry, and this is not the case. The focus of the invention is not detailed here, and the details of the implementation of each nanoimprint lithography process are not described here.
參閱圖1、圖4、圖5,最後進行二次圖案形成步驟13,於該塊形成有些第一圖案結構31的基材3上,依據一選取的原點O改變該模仁2與形成有第一圖案結構31的基材3的圖形相對位置,並用改變圖形相對位置後的模仁2進行奈米壓印微影製程,而於形成有第一圖案結構31的基材3上再形成與第一圖案結構31屬同一平面的多數個結構點的第二圖案結構32(斜線圓點),該些第一、二圖案結構31、32即為衍生自該模仁2之多數個結構點22的表面圖案。Referring to FIG. 1 , FIG. 4 and FIG. 5 , finally, a secondary pattern forming step 13 is performed on the substrate 3 on which the first pattern structure 31 is formed, and the mold core 2 is formed and formed according to a selected origin O. The relative position of the substrate 3 of the first pattern structure 31 is subjected to a nanoimprint lithography process by using the mold 2 after changing the relative position of the pattern, and is formed on the substrate 3 on which the first pattern structure 31 is formed. The first pattern structure 31 belongs to a second pattern structure 32 (hatched dot) of a plurality of structural points of the same plane, and the first and second pattern structures 31, 32 are a plurality of structural points 22 derived from the mold core 2. Surface pattern.
要說明的是,選取的原點O可以是其中一個壓印圖樣單元23的原點、中心點,或壓印圖樣單元23內的任一選取點,且模仁2的平面變化模式也沒有限制,而在本例中,是以對應於壓印圖樣單元23的中心點作為原點O,並依據該原點O相對該基材轉動該模仁45°進行圖案壓印而形成該些第二圖案結構32,而令得對應於每一壓印圖樣單元23形成的第一圖案結構31,和改變模仁2位置後對應於每一壓印圖樣單元23形成的第二圖案結構32、33,共同構成規則重複分佈的表面圖案。It should be noted that the selected origin O may be the origin, the center point of one of the imprint pattern units 23, or any selected point in the imprint pattern unit 23, and the plane change pattern of the mold core 2 is also not limited. In this example, the center point corresponding to the imprint pattern unit 23 is used as the origin O, and the pattern is imprinted according to the origin O relative to the substrate by 45° to form the second portions. The pattern structure 32 is made to correspond to the first pattern structure 31 formed by each of the imprint pattern units 23, and the second pattern structure 32, 33 formed corresponding to each of the imprint pattern units 23 after changing the position of the mold core 2, Together form a surface pattern that is regularly distributed.
參閱附件1、2、3,將上述本發明的第一較佳實施例應用在實際於發光二極體晶粒上形成類光子晶體圖案結構時,是設計模仁上每一結構點為凸柱型態,柱直徑350nm、柱高度150nm,且所述的結構點成間距700nm週期排列,之後,於奈米壓印機台配合模仁進行熱壓式奈米壓印微影製程形成洞狀的第一圖案結構(如附件1所示,其中,綠色點即為所成的第一圖案結構),繼之,以相同原點、轉動模仁45°重複上述過程形成洞狀的第二圖案結構(如附件2所示,其中,綠色點即為所成的第一圖案結構,紅色點為第二圖案結構),此時,第一、二圖案結構所成的表面圖案即為高對稱性的表面圖案,進而完成具有類光子晶體結構之發光二極體晶粒;完成的發光二極體晶粒的發光光型如附件3所示,可以驗證本發明可以簡易地於發光二極體晶粒完成具高對稱性的光子晶體結構表面圖案,進而改善發光二極體晶粒的光取出率,或光型。Referring to the attachments 1, 2, and 3, the first preferred embodiment of the present invention is applied to form a photonic crystal pattern structure on the illuminating diode dies, and each structural point on the mold core is a convex column. Type, the column diameter is 350 nm, the column height is 150 nm, and the structural points are arranged at a pitch of 700 nm, and then, the nano-imprinting machine is combined with the mold core to perform hot pressing type nanoimprint lithography process to form a hole shape. a first pattern structure (as shown in Annex 1, wherein the green dot is the first pattern structure formed), and then repeating the above process at the same origin and rotating the mold core 45° to form a second pattern structure having a hole shape (As shown in Annex 2, where the green dot is the first pattern structure formed and the red dot is the second pattern structure), the surface pattern formed by the first and second pattern structures is highly symmetrical. The surface pattern further completes the light-emitting diode crystal having a photonic crystal structure; the light-emitting light pattern of the completed light-emitting diode crystal is as shown in Annex 3, and it can be verified that the present invention can be easily applied to the light-emitting diode crystal grain Complete photonic crystal structure table with high symmetry Pattern, thereby improving the light extraction efficiency of the light emitting diode die, or optical type.
參閱圖6、圖7,本發明以壓印方式形成表面圖案的方法的一第二較佳實施例是與該第一較佳實施例相似,不同處在於本例還包含一再次圖案形成步驟14,而於基材31上形成態樣更複雜的表面圖案。Referring to FIG. 6 and FIG. 7, a second preferred embodiment of the method for forming a surface pattern by imprinting is similar to the first preferred embodiment, except that the example further includes a re-patterning step 14 On the substrate 31, a more complicated surface pattern is formed.
詳細而言,本例是在該二次圖案形成步驟13實施時,是令該模仁2轉動30°以形成第二圖案結構32(即圖示中斜線圓點),之後,進行再次圖案形成步驟14,以相同的原點O和相同的平面變化模式,再改變該模仁2與形成有所述的第一、二圖案結構31、32的基材3的圖形相對位置,也就是依據原點O再相對基材3轉動該模仁30°,並用改變圖形相對位置後的模仁2進行奈米壓印微影製程,而於形成有第一、二圖案結構31、32的基材3上再形成多數個結構點的第三圖案結構33(即圖式中的黑色圓點),形成的第一、二、三圖案結構31、32、33即於該基材3上構成衍生自模仁2的結構點22的表面圖案。In detail, in this example, when the secondary pattern forming step 13 is performed, the mold core 2 is rotated by 30° to form a second pattern structure 32 (ie, a diagonal dot in the drawing), and then patterned again. In step 14, the same origin O and the same plane change pattern are used to change the relative position of the mold 2 and the substrate 3 on which the first and second pattern structures 31 and 32 are formed, that is, according to the original The point O is further rotated by 30° with respect to the substrate 3, and the nano-imprint lithography process is performed with the mold 2 after changing the relative position of the pattern, and the substrate 3 having the first and second pattern structures 31 and 32 is formed. Forming a third pattern structure 33 of a plurality of structural points (ie, black dots in the drawing), and forming the first, second, and third pattern structures 31, 32, and 33 to form a derivative pattern on the substrate 3 The surface pattern of the structural point 22 of the kernel 2.
另外要說明的是,上述本發明以壓印方式形成表面圖案的方法,還可以再重複實施類似於再次圖案形成步驟14的過程,進而於基材3上再形成更多的圖案結構;另外,每一壓印圖樣單元23可以是由三個結構點22構成的正三角形圖案、由三個結構點22構成的等腰三角形圖案、由四個結構點22構成的矩形圖案、由四個結構點22構成的鳶形圖案、由四個結構點22構成的等腰梯形圖案、由六個結構點22構成的六方圖案,或此等圖案其中之一組合的複合圖案,例如阿基米德A7、阿基米德A13等圖案,如此,再配合模仁2的平面變化模式,例如相對於基材3轉動的預定角度愈小,則可以壓印得到每一單位晶胞34態樣更趨複雜的表面圖案,包括長程有序晶格結構表面圖案、短程有序準晶格結構表面圖案,及類自然態結構表面圖案。It should be noted that, in the above method for forming a surface pattern by imprinting, the process similar to the pattern forming step 14 can be repeated, and then more pattern structures are formed on the substrate 3; Each of the imprint pattern elements 23 may be an equilateral triangle pattern composed of three structure points 22, an isosceles triangle pattern composed of three structure points 22, a rectangular pattern composed of four structure points 22, and four structure points. a chevron pattern of 22, an isosceles trapezoidal pattern composed of four structural points 22, a hexagonal pattern composed of six structural dots 22, or a composite pattern of one of such patterns, such as Archimedes A7, Patterns such as Archimedes A13, and so on, in conjunction with the plane change pattern of the mold core 2, for example, the smaller the predetermined angle of rotation relative to the substrate 3, the embossing can be more complicated for each unit cell 34 pattern. The surface pattern includes a long-range ordered lattice structure surface pattern, a short-range ordered quasi-lattice structure surface pattern, and a natural-like structure surface pattern.
本發明以壓印方式形成表面圖案的方法的一第三較佳實施例是與該第二較佳實施例相似,其不同處在於本例在實施再次圖案形成步驟時,是再決定與該原點和模仁變化模式具有預定數學關係的一衍生原點和一衍生平面變化方式,並以該衍生原點和該衍生平面變化方式再改變該模仁與形成有第一、二圖案結構的該基材的圖形相對位置後,用改變圖形相對位置後的該模仁進行奈米壓印微影製程,而於基材上再形成多數圖案結構,而得到衍生自模仁之多數個結構點的表面圖案。A third preferred embodiment of the method for forming a surface pattern by imprinting in the present invention is similar to the second preferred embodiment, except that in the case of performing the pattern forming step again, the present embodiment is determined again. The point and the mold change mode have a derivative origin and a derivative plane change manner, and the change of the mold origin and the derivative plane change manner to form the first and second pattern structures After the relative position of the pattern of the substrate, the mold is subjected to a nanoimprint lithography process by changing the relative position of the pattern, and a plurality of pattern structures are formed on the substrate to obtain a surface derived from a plurality of structural points of the mold core. pattern.
參閱圖8,更詳細地說,在本例中是令該衍生原點與該原點O重合,並令該模仁轉動15°得到第二圖案結構,之後再分別轉動30°、60°而分別得到第三、四圖案結構,進而得到衍生自模仁之多數個結構點且複雜度更高的表面圖案。Referring to FIG. 8, in more detail, in this example, the derivative origin is coincident with the origin O, and the mold core is rotated by 15° to obtain a second pattern structure, and then rotated by 30° and 60°, respectively. The third and fourth pattern structures are respectively obtained, thereby obtaining a surface pattern derived from a plurality of structural points of the mold core and having higher complexity.
由上述三較佳實施例的說明可知,當改變模仁相對基板的平面位置時,是以相同且固定的原點以及相同的模仁改變的方式,則可以於同一位置區域內提高壓印得到的表面圖案的對稱性,而可以應用於例如太陽能電池、發光二極體等元件上以有序的表面圖案形成光子晶體結構,或類光子晶體結構,以提升光入射利用率、或光取出率,或光型。It can be seen from the description of the above three preferred embodiments that when the position of the mold relative to the plane of the substrate is changed, the same and fixed origin and the same mold are changed, so that the imprint can be improved in the same position area. The symmetry of the surface pattern can be applied to an element such as a solar cell or a light-emitting diode to form a photonic crystal structure in an ordered surface pattern, or a photonic crystal structure to enhance light incidence or light extraction rate. , or light type.
而當原點和衍生原點是成例如圓、橢圓、曲線、渦形…等預定數學關係,並配合模仁以預定的數學方程式關係例如轉動加上位移方式變化時,則可以形成更複雜態樣的表面圖案,包括長程有序晶格結構表面圖案、短程有序準晶格結構表面圖案,及類自然態結構表面圖案,此時,除了可以應用於例如太陽能電池、發光二極體外,還可以應用於在基板上佈設有一定亂度分佈之抗菌點的製作,以提升整體的抗菌效果。When the origin and the derived origin are predetermined mathematical relationships such as circles, ellipses, curves, vortices, etc., and the molds are changed in a predetermined mathematical equation relationship such as rotation plus displacement, a more complicated state can be formed. The surface pattern includes a long-range ordered lattice structure surface pattern, a short-range ordered quasi-lattice structure surface pattern, and a natural-like structure surface pattern. In this case, in addition to being applicable to, for example, a solar cell or a light-emitting diode, It can be applied to the production of antibacterial spots with a certain degree of disorder distribution on the substrate to enhance the overall antibacterial effect.
還要補充說明的是,本發明以壓印方式形成表面圖案的方法還可以應用製作模仁、甚至光罩上,先製作結構簡單的初始模仁後,以本發明的步驟進行多次壓印,而形成結構複雜的最終壓印用模具、或是光罩,進而達到降低設計、製作圖案結構複雜的模仁、光罩的製作成本。It should be further noted that the method for forming a surface pattern by imprinting can also be applied to a mold core or even a photomask, and after the initial mold core having a simple structure is produced, the stamping process is performed multiple times with the steps of the present invention. The final imprinting mold or the photomask having a complicated structure is formed, thereby reducing the manufacturing cost of the mold and the photomask which are complicated in design and pattern structure.
此外,本發明在實施該模仁建立步驟時,還可以先製作多數個結構簡單的模仁,之後在該基礎圖案形成步驟、二次圖案形成步驟,乃至於再次圖案形成步驟實施時,依序更換使用不同的模仁進行奈米壓印微影製程,最終得到結構更複雜多樣的表面圖案。In addition, in the implementation of the mold establishing step, the present invention may also firstly fabricate a plurality of molds having a simple structure, and then in the basic pattern forming step, the secondary pattern forming step, or even when the pattern forming step is performed again, sequentially The use of different molds for nanoimprint lithography process, resulting in a more complex and diverse surface pattern.
由上述說明可知,本發明主要是以構造簡單的模仁,進行目前成熟的奈米壓印技術,轉印出態樣複雜的表面圖案,包括長程有序晶格結構表面圖案、短程有序準晶格結構表面圖案,及類自然態結構表面圖案,而可確實改善現在製作表面圖案時,都直接受限於光罩或模仁的圖案態樣的問題,故確實能達成本發明之目的。It can be seen from the above description that the present invention mainly uses a simple structure of the mold core to carry out the current mature nanoimprint technology, and transfers a complicated surface pattern, including a long-range ordered lattice structure surface pattern, short-range orderly The surface pattern of the lattice structure and the surface pattern of the natural structure can be surely improved when the surface pattern is currently produced, which is directly limited by the pattern of the mask or the mold, so that the object of the present invention can be achieved.
惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.
11...模仁建立步驟11. . . Mold establishment steps
12...基礎圖案形成步驟12. . . Basic pattern forming step
13...二次圖案形成步驟13. . . Secondary pattern forming step
14...再次圖案形成步驟14. . . Pattern forming step again
2...模仁2. . . Mold
21...結構點twenty one. . . Structure point
22...壓印圖樣單元twenty two. . . Embossed pattern unit
3...基材3. . . Substrate
31...第一結構點31. . . First structure point
32...第二結構點32. . . Second structure point
33...第三結構點33. . . Third structure point
34...單位晶胞34. . . Unit cell
4...原點4. . . origin
圖1是一流程圖,說明本發明以壓印方式形成表面圖案的方法的一第一較佳實施例;1 is a flow chart illustrating a first preferred embodiment of the method of forming a surface pattern by imprinting of the present invention;
圖2是一示意圖,說明實施本發明以壓印方式形成表面圖案的方法的第一較佳實施例的模仁建立步驟時,製作出的模仁結構;2 is a schematic view showing the structure of the mold core produced by the mold establishing step of the first preferred embodiment of the method for forming a surface pattern by imprinting according to the present invention;
圖3是一示意圖,說明實施本發明以壓印方式形成表面圖案的方法的第一較佳實施例的基礎圖案形成步驟時,於一基材上形成多數結構點的第一圖案結構;3 is a schematic view showing a first pattern structure in which a plurality of structural dots are formed on a substrate when the basic pattern forming step of the first preferred embodiment of the method for forming a surface pattern by the imprinting method of the present invention is performed;
圖4是一立體示意圖,說明實施本發明以壓印方式形成表面圖案的方法的第一較佳實施例的二次圖案形成步驟時,依據一原點O相對改變模仁與形成有第一圖案結構的基材的平面位置;4 is a perspective view showing the secondary pattern forming step of the first preferred embodiment of the method for forming a surface pattern by imprinting according to the present invention, wherein the mold core is relatively changed according to an origin O and a first pattern is formed. The planar position of the substrate of the structure;
圖5是一示意圖,說明實施本發明以壓印方式形成表面圖案的方法的第一較佳實施例的二次圖案形成步驟時,於該基材上形成多數第二圖案結構,而得到表面圖案;FIG. 5 is a schematic view showing a second pattern forming step of the first preferred embodiment of the method for forming a surface pattern by imprinting according to the present invention, wherein a plurality of second pattern structures are formed on the substrate to obtain a surface pattern. ;
圖6是一流程圖,說明本發明以壓印方式形成表面圖案的方法的一第二較佳實施例;Figure 6 is a flow chart illustrating a second preferred embodiment of the method of forming a surface pattern by imprinting of the present invention;
圖7是一示意圖,說明實施本發明以壓印方式形成表面圖案的方法的第二較佳實施例所得到的表面圖案;及Figure 7 is a schematic view showing a surface pattern obtained by the second preferred embodiment of the method for forming a surface pattern by imprinting of the present invention; and
圖8是一示意圖,說明實施本發明以壓印方式形成表面圖案的方法的第三較佳實施例所得到的表面圖案。Figure 8 is a schematic view showing a surface pattern obtained by the third preferred embodiment of the method of forming a surface pattern by imprinting of the present invention.
附件1是本發明的第一較佳實施例應用在實際於發光二極體晶粒上形成類光子晶體圖案結構時,第一次壓印得到的表面圖案;The first preferred embodiment of the present invention is a surface pattern obtained by first imprinting when a photonic crystal pattern structure is actually formed on a light-emitting diode die;
附件2是本發明的第一較佳實施例應用在實際於發光二極體晶粒上形成類光子晶體圖案結構時,第二次壓印得到的表面圖案;及Attachment 2 is a surface pattern obtained by the second imprinting when the first preferred embodiment of the present invention is applied to form a photonic crystal pattern structure on a light-emitting diode die;
附件3是本發明的第一較佳實施例應用在實際於發光二極體晶粒上形成類光子晶體圖案結構時,最後製作得到的發光二極體晶粒的出光光型。The third embodiment of the present invention is applied to the light-emitting pattern of the finally produced light-emitting diode crystal grains when the photonic crystal pattern structure is actually formed on the light-emitting diode crystal grains.
11...模仁建立步驟11. . . Mold establishment steps
12...基礎圖案形成步驟12. . . Basic pattern forming step
13...二次圖案形成步驟13. . . Secondary pattern forming step
14...再次圖案形成步驟14. . . Pattern forming step again
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| US7388233B2 (en) * | 2005-10-17 | 2008-06-17 | Luminus Devices, Inc. | Patchwork patterned devices and related methods |
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| US5965327A (en) * | 1991-12-03 | 1999-10-12 | Asahi Kogaku Kogyo Kaisha | Method for manufacturing a master die for a diffusion plate and diffusion manufactured by said method |
| US7388233B2 (en) * | 2005-10-17 | 2008-06-17 | Luminus Devices, Inc. | Patchwork patterned devices and related methods |
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